US20040212312A1 - High-density plasma source using excited atoms - Google Patents
High-density plasma source using excited atoms Download PDFInfo
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- US20040212312A1 US20040212312A1 US10/249,844 US24984403A US2004212312A1 US 20040212312 A1 US20040212312 A1 US 20040212312A1 US 24984403 A US24984403 A US 24984403A US 2004212312 A1 US2004212312 A1 US 2004212312A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Abstract
Description
- This application is a continuation-in-part of U.S. patent application Ser. No. 10/249,595, filed on Apr. 22, 2003, the entire disclosure of which is incorporated herein by reference.
- Plasma is considered the fourth state of matter. A plasma is a collection of charged particles that move in random directions. A plasma is, on average, electrically neutral. One method of generating a plasma is to drive a current through a low-pressure gas between two conducting electrodes that are positioned parallel to each other. Once certain parameters are met, the gas “breaks down” to form the plasma. For example, a plasma can be generated by applying a potential of several kilovolts between two parallel conducting electrodes in an inert gas atmosphere (e.g., argon) at a pressure that is in the range of about 10−1 to 10−2 Torr.
- Plasma processes are widely used in many industries, such as the semiconductor manufacturing industry. For example, plasma etching is commonly used to etch substrate material and to etch films deposited on substrates in the electronics industry. There are four basic types of plasma etching processes that are used to remove material from surfaces: sputter etching, pure chemical etching, ion energy driven etching, and ion inhibitor etching.
- Plasma sputtering is a technique that is widely used for depositing films on substrates and other work pieces. Sputtering is the physical ejection of atoms from a target surface and is sometimes referred to as physical vapor deposition (PVD). Ions, such as argon ions, are generated and are then drawn out of the plasma and accelerated across a cathode dark space. The target surface has a lower potential than the region in which the plasma is formed. Therefore, the target surface attracts positive ions.
- Positive ions move towards the target with a high velocity and then impact the target and cause atoms to physically dislodge or sputter from the target surface. The sputtered atoms then propagate to a substrate or other work piece where they deposit a film of sputtered target material. The plasma is replenished by electron-ion pairs formed by the collision of neutral molecules with secondary electrons generated at the target surface.
- Reactive sputtering systems inject a reactive gas or mixture of reactive gases into the sputtering system. The reactive gases react with the target material either at the target surface or in the gas phase, resulting in the deposition of new compounds. The pressure of the reactive gas can be varied to control the stoichiometry of the film. Reactive sputtering is useful for forming some types of molecular thin films.
- Magnetron sputtering systems use magnetic fields that are shaped to trap and concentrate secondary electrons proximate to the target surface. The magnetic fields increase the density of electrons and, therefore, increase the plasma density in a region that is proximate to the target surface. The increased plasma density increases the sputter deposition rate.
- This invention is described with particularity in the detailed description. The above and further advantages of this invention may be better understood by referring to the following description in conjunction with the accompanying drawings, in which like numerals indicate like structural elements and features in various figures. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
- FIG. 1 illustrates a cross-sectional view of a known plasma generating apparatus having a direct current (DC) power supply.
- FIG. 2A illustrates a cross-sectional view of a plasma generating apparatus having a segmented cathode according to the invention.
- FIG. 2B illustrates a cross-sectional view of the segmented cathode of FIG. 2A.
- FIG. 3 illustrates a cross-sectional view of a plasma generating apparatus including a magnet assembly according to the invention.
- FIG. 4 illustrates a graphical representation of applied power as a function of time for periodic pulses applied to an initial plasma in the plasma generating system of FIG. 2A.
- FIG. 5 illustrates a cross-sectional view of a plasma generating apparatus including the magnet assembly of FIG. 3 and an additional magnet assembly according to the invention.
- FIG. 6 illustrates a cross-sectional view of a plasma generating apparatus including the magnet assembly of FIG. 3 and an additional magnet assembly according to the invention.
- FIG. 7 illustrates a cross-sectional view of another embodiment of a plasma generating apparatus including a magnet assembly according to the invention.
- FIG. 8 illustrates a cross-sectional view of a plasma generating apparatus including a magnet configuration that includes a first magnet and a second magnet according to the invention.
- FIG. 9 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly, an ionizing electrode, and a first, a second and a third power supply.
- FIG. 10 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly, a common anode, an ionizing electrode and a first, a second and a third power supply.
- FIG. 11 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly and a first, a second and a third power supply.
- FIG. 12 illustrates a cross-sectional view of a plasma generating apparatus according to the present invention including a segmented cathode assembly, an excited atom source, and a first, and a second power supply.
- FIG. 13 illustrates a graphical representation of the power as a function of time for each of a first, a second and a third power supply for one mode of operating the plasma generating system of FIG. 9.
- FIG. 14 illustrates a graphical representation of power generated as a function of time for each of a first a second and a third power supply for one mode of operating the plasma generating system of FIG. 9.
- FIG. 15 illustrates a graphical representation of the power as a function of time for each of a first, a second and a third power supply for one mode of operating the plasma generating system of FIG. 9.
- FIG. 16A through FIG. 16C are flowcharts of illustrative processes of generating high-density plasmas according to the present invention.
- FIG. 1 illustrates a cross-sectional view of a known
plasma generating apparatus 100 having aDC power supply 102. The knownplasma generating apparatus 100 includes avacuum chamber 104 where aplasma 105 is generated. Thevacuum chamber 104 can be coupled to ground. Thevacuum chamber 104 is positioned in fluid communication with avacuum pump 106 via aconduit 108 and avalve 109. Thevacuum pump 106 is adapted to evacuate thevacuum chamber 104 to high vacuum. The pressure inside thevacuum chamber 104 is generally less than 10−Torr. Afeed gas 110 from afeed gas source 111, such as an argon gas source, is introduced into thevacuum chamber 104 through agas inlet 112. The gas flow is controlled by avalve 113. - The
plasma generating apparatus 100 also includes acathode assembly 114. Thecathode assembly 114 is generally in the shape of a circular disk. Thecathode assembly 114 can include atarget 116. Thecathode assembly 114 is electrically connected to a first terminal 118 of theDC power supply 102 with anelectrical transmission line 120. Aninsulator 122 isolates theelectrical transmission line 120 from a wall of thevacuum chamber 104. Ananode 124 is electrically connected to asecond terminal 126 of theDC power supply 102 with anelectrical transmission line 127. Aninsulator 128 isolates theelectrical transmission line 127 from the wall of thevacuum chamber 104. Theanode 124 is positioned in thevacuum chamber 104 proximate to thecathode assembly 114. Aninsulator 129 isolates theanode 124 from thecathode assembly 114. Theanode 124 and thesecond output 126 of theDC power supply 102 are coupled to ground in some systems. - The
plasma generating apparatus 100 illustrates a magnetron sputtering system that includes amagnet 130 that generates amagnetic field 132 proximate to thetarget 116. Themagnetic field 132 is strongest at the poles of themagnet 130 and weakest in theregion 134. Themagnetic field 132 is shaped to trap and concentrate secondary electrons proximate to the target surface. The magnetic field increases the density of electrons and, therefore, increases the plasma density in a region that is proximate to the target surface. - The
plasma generating apparatus 100 also includes asubstrate support 136 that holds asubstrate 138 or other work piece. Thesubstrate support 136 can be electrically connected to afirst terminal 140 of aRF power supply 142 with anelectrical transmission line 144. Aninsulator 146 isolates theRF power supply 142 from a wall of thevacuum chamber 104. Asecond terminal 148 of theRF power supply 142 is coupled to ground. - In operation, the
feed gas 110 from thefeed gas source 111 is injected into thechamber 104. TheDC power supply 102 applies a DC voltage between thecathode assembly 114 and theanode 124 that causes anelectric field 150 to develop between thecathode assembly 114 and theanode 124. The amplitude of the DC voltage is chosen so that it is sufficient to cause the resulting electric field to ionize thefeed gas 110 in thevacuum chamber 104 and to ignite theplasma 105. - The ionization process in known plasma sputtering apparatus is generally referred to as direct ionization or atomic ionization by electron impact and can be described by the following equation:
- where Ar represents a neutral argon atom in the
feed gas 110 and e− represents an ionizing electron generated in response to the voltage applied between thecathode assembly 114 and theanode 124. The collision between the neutral argon atom and the ionizing electron results in an argon ion (Ar+) and two electrons. - The
plasma 105 is maintained, at least in part, by secondary electron emission from thecathode assembly 114. Themagnetic field 132 that is generated proximate to thecathode assembly 114 confines the secondary electrons in theregion 134 and, therefore, confines theplasma 105 approximately in theregion 134. The confinement of the plasma in theregion 134 increases the plasma density in theregion 134 for a given input power. - The
plasma generating apparatus 100 can be configured for magnetron sputtering. Since thecathode assembly 114 is negatively biased, ions in theplasma 105 bombard thetarget 116. The impact caused by these ions bombarding thetarget 116 dislodges or sputters material from thetarget 116. A portion of the sputtered material forms a thin film of sputtered target material on thesubstrate 138. - Known magnetron sputtering systems have relatively poor target utilization. The term “poor target utilization” is defined herein to mean undesirable non-uniform erosion of target material. Poor target utilization is caused by a relatively high concentration of positively charged ions in the
region 134 that results in a non-uniform plasma. Similarly, magnetron etching systems (not shown) typically have relatively non-uniform etching characteristics. - Increasing the power applied to the plasma can increase the uniformity and density of the plasma. However, increasing the amount of power necessary to achieve even an incremental increase in uniformity and plasma density can significantly increase the probability of establishing an electrical breakdown condition leading to an undesirable electrical discharge (an electrical arc) in the
chamber 104. - Applying pulsed direct current (DC) to the plasma can be advantageous since the average discharge power can remain relatively low while relatively large power pulses are periodically applied. Additionally, the duration of these large voltage pulses can be preset so as to reduce the probability of establishing an electrical breakdown condition leading to an undesirable electrical discharge. An undesirable electrical discharge will corrupt the plasma process and can cause contamination in the
vacuum chamber 104. However, very large power pulses can still result in undesirable electrical discharges regardless of their duration. - In one embodiment, an apparatus according to the present invention generates a plasma having a higher density of ions for a giving input power than a plasma generated by known plasma systems, such as the
plasma generating apparatus 100 of FIG. 1. - A high-density plasma generation method and apparatus according to the present invention uses an electrode structure including three or more electrodes to generate a high-density plasma including excited atoms, ions, neutral atoms and electrons. The electrodes can be a combination of cathodes, anodes, and/or ionizing electrodes. The electrodes can be configured in many different ways, such as a ring electrode structure, a linear electrode structure, or hollow cathode electrode structure. The plasma generation method and apparatus of the present invention provides independent control of two or more co-existing plasmas in the system.
- A high-density plasma source according to the present invention can include one or more feed gas injection systems that inject feed gas proximate to one or more of the electrodes in the plasma source. The feed gas can be any mixture of gases as described herein. The one or more feed gas injection systems can also inject plasma proximate to one or more of the electrodes in the plasma source. The injected plasma can be a high-density plasma or a low-density plasma. In one embodiment, an initial plasma is generated and then it is super-ionized to form a high-density plasma. The term “super-ionized” is defined herein to mean that at least 75% of the neutral atoms in the plasma are converted to ions.
- The high-density plasma source of the present invention can operate in a constant power, constant voltage, or constant current mode. These modes of operation are discussed herein. In addition, the high-density plasma source can use different types of power supplies to generate the high-density plasma. For example, direct-current (DC), alternating-current (AC), radio-frequency (RF), or pulsed DC power supplies can be used to generate the high-density plasma. The power supplies can generate power levels in the range of about 1W to 10 MW.
- The plasma generated by the high-density plasma source of the present invention can be used to sputter materials from solid or liquid targets. Numerous types of materials can be sputtered. For example, magnetic, non-magnetic, dielectric, metals, and semiconductor materials can be sputtered.
- In one embodiment, the high-density plasma source of the present invention generates relatively high deposition rates near the outer edge of a sputtering target. The target can be designed and operated such that the increase in the deposition rate near the outer edge of the sputtering target compensates for the decrease of the sputtering rate typically associated with the edge of a sputtering target. This embodiment allows the use of relatively small targets, which can reduce the overall footprint of a process tool, the cost of the target and the cost to operate the process tool.
- The high-density plasma source of the present invention provides high target utilization and high sputtering uniformity. Additionally, the plasma generated by the high-density plasma source of the present invention can be used for producing ions or atoms from molecules for numerous applications, such as sputter etch, reactive etch, chemical vapor deposition, and for generating ion beams.
- FIG. 2A illustrates a cross-sectional view of a
plasma generating apparatus 200 having a segmented cathode 202 according to the invention. In one embodiment, the segmented cathode 202 includes aninner cathode section 202 a and anouter cathode section 202 b. In some embodiments (not shown), the segmented cathode 202 includes more than two sections. The segmented cathode 202 can be composed of a metal material, such as stainless steel or any other material that does not chemically react with reactive gases. The segmented cathode 202 can include a target (not shown) that is used for sputtering. Theinner cathode section 202 a and theouter cathode section 202 b can be composed of different materials. - The
outer cathode section 202 b is coupled to afirst output 204 of afirst power supply 206. Thefirst power supply 206 can operate in a constant power mode. The term “constant power mode” is defined herein to mean that the power generated by the power supply has a substantially constant power level regardless of changes in the output current and the output voltage level. In another embodiment, thefirst power supply 206 operates in a constant voltage mode. The term “constant voltage mode” is defined herein to mean that the voltage generated by the power supply has a substantially constant voltage level regardless of changes in the output current and the output power level. Thefirst power supply 206 can include an integrated matching unit (not shown). Alternatively, a matching unit (not shown) can be electrically connected to thefirst output 204 of thefirst power supply 206. - A
second output 208 of thefirst power supply 206 is coupled to afirst anode 210. Aninsulator 211 isolates thefirst anode 210 from theouter cathode section 202 b. In one embodiment, thesecond output 208 of thefirst power supply 206 and thefirst anode 210 are coupled to ground potential (not shown). - In one embodiment (not shown), the
first output 204 of thefirst power supply 206 couples a negative voltage impulse to theouter cathode section 202 b. In another embodiment (not shown), thesecond output 208 of thefirst power supply 206 couples a positive voltage impulse to thefirst anode 210. Numerous types of power supplies can be used for thefirst power supply 206. For example, thefirst power supply 206 can be a pulsed power supply, radio-frequency (RF) power supply, an alternating-current (AC) power supply, or a direct-current (DC) power supply. - The
first power supply 206 can be a pulsed power supply that generates peak voltage levels of up to about 5 kV. Typical operating voltages are in the range of about 50V to 5 kV. Thefirst power supply 206 can generate peak current levels in the range of about 1 mA to 100 kA depending on the desired volume and characteristics of the plasma. Typical operating currents vary from less than one hundred amperes to more than a few thousand amperes depending on the desired volume and characteristics of the plasma. Thefirst power supply 206 can generate pulses having a repetition rate that is below 1 kHz. Thefirst power supply 206 can generate pulses having a pulse width that is in the range of about one microsecond to several seconds. - The
first anode 210 is positioned so as to form agap 212 between thefirst anode 210 and theouter cathode section 202 b that is sufficient to allow current to flow through aregion 214 between thefirst anode 210 and theouter cathode section 202 b. In one embodiment, the width of thegap 212 is in the range of about 0.3 cm to 10 cm. The surface area of theouter cathode section 202 b determines the volume of theregion 214. Thegap 212 and the total volume of theregion 214 are parameters in the ionization process as described herein. - For example, the
gap 212 can be configured to generate exited atoms from ground state atoms. The excited atoms can increase the density of a plasma. Since excited atoms generally require less energy to ionize than ground state gas atoms, a volume of excited atoms can generate a higher density plasma than a similar volume of ground state feed gas atoms for the same input energy. Additionally, thegap 212 can be configured to conduct exited atoms towards theinner cathode section 202 a. The excited atoms can either be generated externally or inside thegap 212 depending on the configuration of the system. In one embodiment, thegap 212 exhibits a pressure differential that forces the exited atoms towards theinner cathode section 202 a. This can increase the density of the plasma proximate to theinner cathode section 202 a as previously discussed. - The
gap 212 can be a plasma generator. In this configuration, feed gas is supplied to thegap 212 and a plasma is ignited in thegap 212. An ignition condition in thegap 212 can be optimized by varying certain parameters of thegap 212. For example, the presence of crossed electric and magnetic fields in thegap 212 can assist in the ignition and development of a plasma in thegap 212. The crossed electric and magnetic fields trap electrons and ions, thereby improving the efficiency of the ionization process. - The
gap 212 can facilitate the use of high input power. For example, as high power is applied to a plasma that is ignited and developing in thegap 212, additional feed gas can be supplied to thegap 212. This additional feed gas displaces some of the already developing plasma and absorbs any excess power applied to the plasma. The absorption of the excess power prevents the plasma from contracting and terminating which could otherwise occur without the additional feed gas. - In some embodiments (not shown), the
first anode 210 and/or theouter cathode section 202 b can include raised areas, depressed areas, surface anomalies, or shapes that improve the ionization process. For example, the pressure in theregion 214 can be optimized by including a raised area (not shown) on the surface of theouter cathode section 202 b. The raised area can create a narrow passage at a location in theregion 214 between thefirst anode 210 and theouter cathode section 202 b that changes the pressure in theregion 214. - The
first output 220 of asecond power supply 222 is electrically coupled to theinner cathode section 202 a. Thesecond power supply 222 can operate in a constant power mode or a constant voltage mode. Thesecond power supply 222 can have an integrated matching unit (not shown). Alternatively, a matching unit (not shown) is electrically connected to thefirst output 220 of thefirst power supply 222. Thesecond power supply 222 can be any type of power supply, such as a pulsed power supply, a DC power supply, an AC power supply, or a RF power supply. - A
second output 224 of thesecond power supply 222 is coupled to asecond anode 226. Aninsulator 227 is positioned to isolate thesecond anode 226 from theouter cathode section 202 b. Another insulator (not shown) can be positioned to isolate thesecond anode 226 from theinner cathode section 202 a. In one embodiment (not shown), thesecond output 224 of thesecond power supply 222 and thesecond anode 226 are electrically connected to ground potential. - The
first output 220 of thesecond power supply 222 can couple a negative voltage impulse to theinner cathode section 202 a. Thesecond output 224 of thesecond power supply 222 can couple a positive voltage impulse to thesecond anode 226. - The
second power supply 222 can be a pulsed power supply that generates peak voltage levels in the range of about 50V to 5 kV. Thesecond power supply 222 can generate peak current levels in the range of about 1 mA to 100 kA depending on the desired volume and characteristics of the plasma. Typical operating currents varying from less than one hundred amperes to more than a few thousand amperes depending on the desired volume and characteristics of the plasma and the desired plasma density. The pulses generated by thesecond power supply 222 can have a repetition rate that is below 1 kHz. The pulse width of the pulses generated by thesecond power supply 222 can be between about one microsecond and several seconds. - The
second anode 226 is positioned proximate to theinner cathode section 202 a such that current is capable of flowing between thesecond anode 226 and theinner cathode section 202 a. The distance between thesecond anode 226 and theinner cathode section 202 a can be in the range of about 0.3 cm to 10 cm. - The
plasma generating apparatus 200 can include a chamber (not shown), such as a vacuum chamber. The chamber is coupled in fluid communication to a vacuum pump (not shown) through a vacuum valve (not shown). The chamber can be electrically coupled to ground potential. - One or
more gas lines feed gas 234, 236 (indicated by arrows) from one or morefeed gas sources feed gas lines line gas valves gas lines gas lines feed gas sources feed gas sources - In one embodiment, the in-
line gas valves feed gases feed gas sources gap 212 can be varied and optimized by pulsing thefeed gas 234 that is injected directly into thegap 212. In one embodiment, the timing of the pulses is synchronized to the timing of power pulses generated by thefirst power supply 206 operated in a pulsed mode. Pulsing thefeed gases gap 212. For example, by pulsing thefeed gas 234 in thegap 212, the instantaneous pressure in the gap is increased while the average pressure in the chamber is unchanged. - Skilled artisans will appreciate that the
plasma generating apparatus 200 can be operated in many different modes. In some modes of operation, the first 206 and thesecond power supplies 222 together with the segmented cathode 202 are used to generate independent plasmas. The parameters of an initial plasma and a high-density plasma can be varied individually as required by the particular plasma process. - In one mode of operation, the
feed gas 234 from thefeed gas source 238 is supplied to the chamber by controlling thegas valve 242. Thefeed gas 234 is supplied between theouter cathode section 202 b and thefirst anode 210. Thefeed gas 234 can be directly injected into thegap 212 between theouter cathode section 202 b and thefirst anode 210 in order to increase the density of a plasma that is generated in thegap 212. Increasing the flow rate of the feed gas causes a rapid volume exchange in theregion 214 between theouter cathode section 202 b and thefirst anode 210. This rapid volume exchange increases the maximum power that can be applied across thegap 212 and thus, permits a high-power pulse having a relatively long duration to be applied across thegap 212. Applying high-power pulses having relatively long durations across thegap 212 results in the formation of high-density plasmas in theregion 214, as described herein. - In another mode of operation, the
first power supply 206 is a component in an ionization source that generates an initial or a pre-ionization plasma in theregion 214. The pre-ionization plasma can be a weakly-ionized plasma. The term “weakly-ionized plasma” is defined herein to mean a plasma with a relatively low peak plasma density. The peak plasma density of the weakly ionized plasma depends on the properties of the specific plasma processing system. For example, a weakly ionized argon plasma is a plasma that has a peak plasma density that is in the range of about 107 to 1012 cm−3. - After a sufficient volume of the
feed gas 234 is supplied between theouter cathode section 202 b and thefirst anode 210, thefirst power supply 206 applies a voltage between theouter cathode section 202 b and thefirst anode 210. Thefirst power supply 206 can be a pulsed (DC) power supply that applies a negative voltage pulse to theouter cathode section 202 b. The size and shape of the voltage pulse are chosen such that an electric field 250 (FIG. 2B) develops between theouter cathode section 202 b and thefirst anode 210. The first power supply can be a DC, AC, or a RF power supply. - The amplitude and shape of the
electric field 250 are chosen such that an initial plasma is generated in theregion 214 between thefirst anode 210 and theouter cathode section 202 b. The initial plasma can be a weakly-ionized plasma that is used for pre-ionization and generally has a relatively low-level of ionization, as described herein. In one embodiment, thefirst power supply 206 generates a low power pulse having an initial voltage that is in the range of about 100V to 5 kV with a discharge current that is in the range of about 0.1A to 100A. The width of the pulse can be in the range of approximately 0.1 microseconds to one hundred seconds. Specific parameters of the pulse are discussed herein in more detail. - In another mode of operation, prior to the generation of the initial plasma in the
region 214, thefirst power supply 206 generates a potential difference between theouter cathode section 202 b and thefirst anode 210 before thefeed gas 234 is supplied to the 214. In this mode of operation, thefeed gas 234 is ignited once a sufficient volume of feed gas is present in theregion 214. - In yet another mode of operation, a direct current (DC) power supply (not shown) is used in an ionization source to generate and maintain the initial plasma in the
region 214. In this mode of operation, the DC power supply is adapted to generate a voltage that is large enough to ignite the initial plasma. For example, the DC power supply can generate an initial voltage of several kilovolts that creates a plasma discharge voltage that is in the range of about 100V to 1 kV with a discharge current that is in the range of about 0.1A to 100A. The value of the discharge current depends on the power level of the DC power supply and is a function of the volume and characteristics of the plasma. Furthermore, the presence of a magnetic field (not shown) in theregion 214 can have a dramatic effect on the value of the applied voltage and current that is required to generate the initial plasma. - The DC power supply can generate a current that is in the range of about 1 mA to 100A depending on the volume of the plasma and the strength of a magnetic field in a
region 214. In one embodiment, before generating the initial plasma, the DC power supply is adapted to generate and maintain an initial peak voltage potential between theouter cathode section 202 b and thefirst anode 210 before the introduction of thefeed gas 234. - In still another mode of operation, an alternating current (AC) power supply (not shown) is used to generate and maintain the initial plasma in the
region 214. An AC power supply can require less power to generate and maintain a plasma than a DC power supply. In other modes of operation, the initial plasma can be generated and maintained using a planar discharge source, a radio frequency (RF) diode source, an ultraviolet (UV) source, an X-ray source, an electron beam source, an ion beam source, an inductively coupled plasma (ICP) source, a capacitively coupled plasma (CCP) source, a microwave plasma source, an electron cyclotron resonance (ECR) source, a helicon plasma source, or ionizing filament techniques. In some of these modes of operation, an initial plasma can be formed outside of theregion 214 and then diffused into theregion 214. - Forming an initial plasma in the
region 214 substantially eliminates the probability of establishing a breakdown condition in the chamber when high-power pulses are subsequently applied between theouter cathode section 202 b and thefirst anode 210. The probability of establishing a breakdown condition is substantially eliminated because the initial plasma has at least a low-level of ionization that provides electrical conductivity through the plasma. This conductivity substantially prevents the setup of a breakdown condition, even when high-power is applied to the plasma. - Referring back to FIG. 2A, the initial plasma diffuses somewhat homogeneously through the
region 252 asadditional feed gas 234 is injected into theregion 214. Theadditional feed gas 234 forces the initial plasma from theregion 214 into theregion 252. This homogeneous diffusion tends to facilitate the creation of a highly uniform plasma in theregion 252. In one embodiment, the pressure in theregion 214 is higher than the pressure in theregion 252. This pressure gradient causes the initial plasma in theregion 214 to diffuse into theregion 252. - Once an initial plasma is formed, several modes of operation can be realized. For example, in one mode of operation, the
first power supply 206 generates high-power pulses in thegap 212 between theouter cathode section 202 b and thefirst anode 210. The desired power level of the high-power pulses depends on several factors including the desired volume and characteristics of the plasma as well as the density of the initial plasma. In one embodiment, the power level of the high-power pulse is in the range of about 1 kW to 10 MW. - Each of the high-power pulses is maintained for a predetermined time that can be in the range of about one microsecond to ten seconds. The repetition frequency or repetition rate of the high-power pulses can be in the range of about 0.1 Hz to 1 kHz. The average power generated by the
first power supply 206 can be less than one megawatt depending on the characteristics and the volume of the plasma. The thermal energy in theouter cathode section 202 b and/or thefirst anode 210 can be conducted away or dissipated by liquid or gas cooling such as helium cooling (not shown). - The high-power pulses generate an electric field250 (FIG. 2B) between the
outer cathode section 202 b and thefirst anode 210. Theelectric field 250 can be a relatively strong electric field, depending on the strength and duration of the high-power pulses. Theelectric field 250 is substantially located in theregion 214 between theouter cathode section 202 b and thefirst anode 210. Theelectric field 250 can be a static or a pulsed electric field. In another embodiment, theelectric field 250 is a quasi-static electric field. The term “quasi-static electric field” is defined herein to mean an electric field that has a characteristic time of electric field variation that is much greater than the collision time for electrons with neutral gas particles. Such a time of electric field variation can be on the order of ten seconds. In another embodiment, the electric field can be an alternating electric field. The term “alternating electric field” is defined herein to mean that the polarity of the electric field changes with time. The strength and the position of theelectric field 250 are discussed in more detail herein. - The high-power pulses generate a high-density plasma from the initial plasma. The term “high-density plasma” is also referred to as a “strongly-ionized plasma.” The terms “high-density plasma” and “strongly-ionized plasma” are defined herein to mean a plasma with a relatively high peak plasma density. For example, the peak plasma density of the high-density plasma is greater than about 1012 cm−3. The discharge current that is formed from the high-density plasma can be on the order of about 5kA with a discharge voltage that is in the range of about 50V to 500V for a pressure that is in the range of about 5 mTorr to 10 Torr.
- The high-density plasma tends to diffuse homogenously in the
region 252. The homogenous diffusion creates a more homogeneous plasma volume. The pressure gradient responsible for this homogenous diffusion is described in more detail herein. Homogeneous plasma volumes are advantageous for many plasma processes. For example, plasma etching processes using homogenous plasma volumes accelerate ions in the high-density plasma towards the surface of the substrate (not shown) being etched in a more uniform manner than conventional plasma etching. Consequently, the surface of the substrate is etched more uniformly. Plasma processes using homogeneous plasma volumes can achieve high uniformity without the necessity of rotating the substrate. - Magnetron sputtering systems using homogenous plasma volumes accelerate ions in the high-density plasma towards the surface of the sputtering target in a more uniform manner than conventional magnetron sputtering. Consequently, the target material is deposited more uniformly on a substrate without the necessity of rotating the substrate and/or the magnetron. Also, the surface of the sputtering target is eroded more evenly and, thus higher target utilization is achieved. In one embodiment, target material can be applied to the first210 and/or the
second anode 226 to reduce possible contamination from sputtering undesired material. - Referring back to FIG. 2A, the
second power supply 222 can be a pulsed power supply that generates high-power pulses between theinner cathode section 202 a and thesecond anode 226 after the high-density plasma is formed in theregion 214 and diffuses into theregion 252 proximate to theinner cathode section 202 a. The desired power level of the high-power pulses depends on several factors including the volume and other characteristics of the plasma such as the density of the high-density plasma. In one embodiment, the power level of the high-power pulse is in the range of about 1 kW to 10 MW. - Each of the high-power pulses is maintained for a predetermined time that can be in the range of one microsecond to ten seconds. The repetition frequency or repetition rate of the high-power pulses can be in the range of between about 0.1 Hz and 1 kHz. The average power generated by the
second power supply 222 can be less than one megawatt depending on the desired volume and characteristics of the plasma. The thermal energy in theinner cathode section 202 a and/or thesecond anode 226 can be conducted away or dissipated by liquid or gas cooling such as helium cooling (not shown). - The high-power pulses generate an electric field254 (FIG. 2B) between the
inner cathode section 202 a and thesecond anode 226. Theelectric field 254 can be a pulsed electric field, a quasi-static electric field or an alternating electric field. The strength and the position of theelectric field 254 will be discussed in more detail herein. - The
second power supply 222 generates high power pulses that launch additional power into the already strongly ionized plasma and, therefore, super-ionize the high-density plasma in theregion 252. The discharge current can be on the order of 5 kA with a discharge voltage that is in the range of about 50V to 500V for a pressure that is in the range of about 5 mTorr to 10 Torr. - In another mode of operation, an initial plasma is generated in the
region 214 and the initial plasma diffuses to theregion 252 as additional feed gas is supplied to theregion 214. - In this mode of operation, the
gap 212 is dimensioned to create a pressure differential between theregion 214 and theregion 252. The pressure differential forces the initial plasma that is generated in theregion 214 into theregion 252. In this embodiment, thesecond power supply 222 applies high-power pulses between theinner cathode section 202 a and thesecond anode 226 after a suitable volume of initial plasma is present in theregion 252. The high-power pulses create anelectric field 254 between theinner cathode section 202 b and thesecond anode 226 that strongly-ionizes the initial plasma thereby creating a high-density plasma in theregion 252. - In yet another mode of operation, feed
gas 236 from thefeed gas source 240 flows between thesecond anode 226 and theinner cathode section 202 a at various times during the plasma generation process. Thisadditional feed gas 236 can be a noble gas, a reactive gas, or a mixture of gases. Theadditional feed gas 236 can facilitate a more efficient plasma generation process and/or can result in a higher density plasma. - In still another mode of operation, a voltage generated by the
second power supply 222 is sufficient to ignite a second plasma (not shown) from thefeed gas 236 in theregion 255 between thesecond anode 226 and theinner cathode section 202 a. This second plasma flows from theregion 255 into theregion 252 as the second plasma is displaced bymore feed gas 236. Additionally, the second plasma from theregion 255 can commingle with the initial plasma from theregion 214 in theregion 252. In one embodiment, a plasma diverting plate 256 (FIG. 2B) is disposed proximate to thesecond anode 226 to divert the second plasma from theregion 255 toward theinner cathode section 202 a and/or towards theregion 214. The size, shape, and location of theplasma diverting plate 256 depend on the desired plasma properties of the second plasma. In one embodiment, target material can be applied to theplasma diverting plate 256 to reduce possible contamination from sputtering undesired material. - Controlling the flow of the
feed gases regions - The
plasma generating apparatus 200 of the present invention generates a relatively high electron temperature plasma and a relatively high-density plasma. One application for the high-density plasma of the present invention is ionized physical vapor deposition (IPVD) (not shown), which is a technique that converts neutral sputtered atoms into positive ions to enhance a sputtering process. - FIG. 2B illustrates a cross-sectional view of the segmented cathode of FIG. 2A. Specifically, FIG. 2B shows that one or both of the
electric fields feed gases feed gases electric fields electric field 250 between theouter cathode section 202 b and thefirst anode 210. - A pre-ionizing voltage is applied between the
outer cathode section 202 b and thefirst anode 210 across thefeed gas 234 to form an initial plasma. The initial plasma can be a weakly-ionized plasma as previously discussed. The initial plasma is generally formed in theregion 214 and diffuses or is transported to theregion 252 as thefeed gas 234 continues to flow. In one embodiment (not shown), a magnetic field is generated in theregion 214 and extends proximate to the center of theinner cathode section 202 a. This magnetic field tends to assist in diffusing electrons in the initial plasma from theregion 214 to theregion 252. The electrons in the initial plasma are substantially trapped in theregion 252 by the magnetic field. The volume of initial plasma in theregion 214 can be rapidly exchanged with a new volume offeed gas 234. - After the formation of the initial plasma in the
region 214, the first power supply 206 (FIG. 2A) applies a high-power pulse between theouter cathode section 202 b and thefirst anode 210. This high-power pulse generates theelectric field 250 in theregion 214. Theelectric field 250 results in collisions occurring between neutral atoms, electrons, and ions in the initial plasma. These collisions generate numerous excited atoms in the initial plasma. The excited atoms can include atoms that are in a metastable state. - The accumulation of excited atoms in the initial plasma alters the ionization process. The
electric field 250 can be a strong electric field that facilitates a multi-step ionization process of an atomic feed gas that significantly increases the rate at which the high-density plasma is formed. The multi-step ionization process has an efficiency that increases as the density of excited atoms in the initial plasma increases. The strongelectric field 250 enhances the formation of ions of a molecular or atomic feed gas. - In one embodiment, the dimensions of the
gap 212 between theouter cathode section 202 b and thefirst anode 210 are chosen so as to maximize the rate of excitation of the atoms. The value of theelectric field 250 in theregion 214 depends on the voltage level applied by thefirst power supply 206 and the dimensions of thegap 212. In some embodiments, the strength of theelectric field 250 can be in the range of about 2V/cm to 105 V/cm depending on various system parameters and operating conditions of the plasma system. - The size of the
gap 212 can be in the range of about 0.30 cm to 10 cm depending on various parameters of the desired plasma. In one embodiment, theelectric field 250 in theregion 214 is rapidly applied to the initial plasma. The rapidly appliedelectric field 250 can be generated by applying a voltage pulse having a rise time that is in the range of about 0.1 microsecond to ten seconds. - In one embodiment, the dimensions of the
gap 212 and the parameters of the appliedelectric field 250 are varied in order to determine the optimum condition for a relatively high rate of excitation of the atoms in theregion 214. Since an argon atom requires energy of about 11.55 eV to become excited, the appliedelectric field 250 can be adjusted to maximize the excitation rate of the argon atoms. Asargon feed gas 234 flows through theregion 214, the initial plasma is formed and many of the atoms in the initial plasma then become excited by the appliedelectric field 250. Thus, the vast majority of ground state feed gas atoms are not directly ionized, but instead undergo a stepwise ionization process. - The excited atoms in the initial plasma then encounter electrons that are in the
region 214. In the case of argon feed case, excited argon atoms only require about 4 eV of energy to ionize while argon ground state atoms require about 15.76 eV of energy to ionize. Therefore, when energy is applied in theregion 214, the excited atoms will ionize at a much higher rate than the ground state atoms. Ions in the high-density plasma strike theouter cathode section 202 b causing secondary electron emission from theouter cathode section 202 b. These secondary electrons interact with neutral or excited atoms in the high-density plasma. This process further increases the density of ions in the high-density plasma as thefeed gas 234 is exchanged. - The multi-step ionization process corresponding to the rapid application of the
electric field 250 can be described as follows: - where Ar represents a neutral ground state argon atom in the
feed gas 234 and e− represents an ionizing electron generated in response to an initial plasma, when sufficient voltage is applied between theouter cathode section 202 b and thefirst anode 210. Additionally, Ar* represents an excited argon atom in the initial plasma. The collision between the excited argon atom and the ionizing electron results in an argon ion (Ar+) and two electrons. - As previously discussed, the excited argon atoms generally require less energy to become ionized than neutral ground state argon atoms. Thus, the excited atoms tend to more rapidly ionize near the surface of the
outer cathode section 202 b than the neutral ground state argon atoms. As the density of the excited atoms in the plasma increases, the efficiency of the ionization process rapidly increases. This increased efficiency eventually results in an avalanche-like increase in the density of the high-density plasma. Under appropriate excitation conditions, the proportion of the energy applied to the initial plasma, which is transformed to the excited atoms, is very high for a pulsed discharge in thefeed gas 234. - In one mode of operation, the density of the plasma is increased by controlling the flow of the
feed gas 234 in theregion 214. In this embodiment, a first volume offeed gas 234 is supplied to theregion 214. The first volume offeed gas 234 is then ionized to form an initial plasma in theregion 214. Thefirst power supply 206 then applies a high-power electrical pulse across the initial plasma. The high-power electrical pulse generates a high-density plasma from the initial plasma. - In another mode of operation, the
feed gas 234 continues to flow into theregion 214 after the initial plasma is formed. The initial plasma is displaced or transported into theregion 252 by a new volume offeed gas 234. The second power supply 222 (FIG. 2A) then applies a high-power electrical pulse between theinner cathode section 202 a and thesecond anode 226. - The density of the plasma is generally limited by the level and duration of the high-power electrical pulse that can be absorbed before the discharge contracts and terminates. Increasing the flow rate of at least one of the
feed gases - Thus, the density of the plasma can be increased by transporting the initial plasma through the
region 214 by a rapid volume exchange offeed gas 234. As thefeed gas 234 moves through theregion 214 and interacts with the moving initial plasma, it becomes partially ionized from the applied electrical pulse. Applying a high-power electrical pulse through theregion 214 can result in an ionization process that includes a combination of direct ionization and/or stepwise ionization as described herein. Transporting the initial plasma through theregion 214 by a rapid volume exchange of thefeed gas 234 increases the level and the duration of the power that can be applied to the high-density plasma and, thus, generates a higher density strongly-ionized plasma. - In one embodiment, the
plasma generating system 200 can be configured for plasma etching. In another embodiment, theplasma generating system 200 can be configured for plasma sputtering. In particular, theplasma generating system 200 can be configured for sputtering magnetic materials. Known magnetron sputtering systems generally are not suitable for sputtering magnetic materials because the magnetic field generated by the magnetron can be absorbed by the magnetic target material. RF diode sputtering is sometimes used to sputter magnetic materials. However, RF diode sputtering generally has poor film thickness uniformity and produces relatively low deposition rates. - The
plasma generating system 200 can be adapted to sputter magnetic materials by including a target assembly (not shown) having a magnetic target material and by driving that target assembly with an RF power supply (not shown). For example, an RF power supply can provide an RF power that is about 10 kW. A substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly. The high-density plasma is generated by applying a strong electric field across the initial plasma as described herein. The RF power supply applies a negative voltage bias to the target assembly. Ions in the high-density plasma bombard the target material thereby causing sputtering. - The
plasma generating system 200 can also be adapted to sputter dielectric materials. Dielectric materials can be sputtered by driving a target assembly (not shown) including a dielectric target material with an RF power supply (not shown). For example, an RF power supply can provide an RF power that is about 10 kW. A substantially uniform initial plasma can be generated by applying RF power across a feed gas that is located proximate to the target assembly. - In one embodiment, a magnetic field is generated proximate to the target assembly in order to trap electrons in the initial plasma. The high-density plasma is generated by applying a strong electric field across the initial plasma as described herein. The RF power supply applies a negative voltage bias to the target assembly. Ions in the high-density plasma bombard the target material thereby causing sputtering.
- A high-density plasma according to the present invention can be used to generate an ion beam. An ion beam source according to the present invention includes the
plasma generating system 200 and an external electrode (not shown) that is used to accelerate ions in the plasma. In one embodiment, the external electrode is a grid. The ion beam source can generate a very high-density ion flux. For example, the ion beam source can generate ozone flux. Ozone is a highly reactive oxidizing agent that can be used for many applications such as cleaning process chambers, deodorizing air, purifying water, and treating industrial wastes, for example. - FIG. 3 illustrates a cross-sectional view of a
plasma generating apparatus 300 including amagnet assembly 302 according to the invention. Themagnet assembly 302 can includepermanent magnets 304, or alternatively, electromagnets (not shown). In one embodiment, themagnet assembly 302 is adapted to create a magnetic field 306 proximate to theinner cathode section 202 a. The configuration of themagnet assembly 302 can be varied depending on the desired shape and strength of the magnetic field 306. Themagnet assembly 302 can have either a balanced or unbalanced configuration. - In one embodiment, the
magnet assembly 302 includes switching electromagnets, which generate a pulsed magnetic field proximate to theinner cathode section 202 a. In some embodiments, additional magnet assemblies (not shown) can be placed at various locations around and throughout the process chamber (not shown). - The
magnetic assembly 302 can be configured to generate a magnetic field in the shape of one or more racetracks (not shown). Magnetic fields in the shape of one or more racetracks can improve target utilization in sputtering targets by distributing regions of highest target erosion across the surface of the target. These regions of high target erosion generally correspond to locations in which the magnetic field lines are parallel to the surface of the target. - In operation, the magnetic field306 is generated proximate to the
inner cathode section 202 a. Thepermanent magnets 304 continuously generate the magnetic field 306. Electro-magnets can also generate the magnetic field 306. The strength of the magnetic field 306 can be in the range of about fifty gauss to two thousand gauss. After the magnetic field 306 is generated, thefeed gas 234 from thegas source 238 is supplied between theouter cathode section 202 b and thefirst anode 210. A volume of thefeed gas 234 fills in theregion 214. - Next, the
first power supply 206 generates an electric field across thefeed gas 234 to ignite an initial plasma in theregion 214. Thefeed gas 234 flows through theregion 214 and continuously displaces the initial plasma. The initial plasma diffuses into theregion 252′ and the magnetic field 306 traps electrons in the initial plasma. A large fraction of the electrons are concentrated in theregion 308 that corresponds to the weakest area of the magnetic field 306 that is generated by themagnet assembly 302. By trapping the electrons in theregion 308, the magnetic field 306 substantially prevents the initial plasma from diffusing away from theinner cathode section 202 a. - The
second power supply 222 generates a strong electric field between thesecond anode 226 and theinner cathode section 202 a. The strong electric field super-ionizes the initial plasma to generate a high-density plasma having an ion density that is greater than the ion density of the initial plasma. In one embodiment, the initial plasma has an ion density that is in the range of about 107 to 1012 cm−3 and the high-density plasma has an ion density that is greater than about 1012 cm−3. - The magnetic field306 can improve the homogeneity of the high-density plasma. The magnetic field 306 can also increase the ion density of the high-density plasma by trapping electrons in the initial plasma and also by trapping secondary electrons proximate to the
inner cathode section 202 a. The trapped electrons ionize excited atoms in the initial plasma thereby generating the high-density plasma. In one embodiment (not shown), a magnetic field is generated in theregion 214 that substantially traps electrons in the area where the initial plasma is ignited. - The magnetic field306 also promotes increased homogeneity of the high-density plasma by setting up a substantially circular electron ExB drift current 310 proximate to the
inner cathode section 202 a. In one embodiment, the electron ExB drift current 310 generates a magnetic field that interacts with the magnetic field 306 generated by themagnet assembly 302. - When high-power pulses are applied between the
inner cathode section 202 a and thesecond anode 226 secondary electrons are generated from theinner cathode section 202 a that move in a substantially circular motion proximate to theinner cathode section 202 a according to crossed electric and magnetic fields. The substantially circular motion of the electrons generates the electron ExB drift current 310. The magnitude of the electron ExB drift current 310 is proportional to the magnitude of the discharge current in the plasma and, in one embodiment, is approximately in the range of about three to ten times the magnitude of the discharge current. - In one embodiment, the substantially circular electron ExB drift current310 generates a magnetic field that interacts with the magnetic field 306 generated by the
magnet assembly 302. In one embodiment, the magnetic field generated by the electron ExB drift current 310 has a direction that is substantially opposite to the magnetic field 306 generated by themagnet assembly 302. The magnitude of the magnetic field generated by the electron ExB drift current 310 increases with increased electron ExB drift current 310. The homogeneous diffusion of the high-density plasma in theregion 252′ is caused, at least in part, by the interaction of the magnetic field 306 generated by themagnet assembly 302 and the magnetic field generated by the electron ExB drift current 310. - In one embodiment, the electron ExB drift current310 defines a substantially circular shape for low current density plasma. However, as the current density of the plasma increases, the substantially circular electron ExB drift current 310 tends to have a more complex shape as the interaction of the magnetic field 306 generated by the
magnet assembly 302, the electric field generated by the high-power pulse, and the magnetic field generated by the electron ExB drift current 310 becomes more acute. For example, in one embodiment, the electron ExB drift current 310 has a substantially cycloidal shape. The exact shape of the electron ExB drift current 310 can be quite elaborate and depends on various factors. - As the magnitude of the electron ExB drift current310 increases, the magnetic field generated by the electron ExB drift current 310 becomes stronger and eventually overpowers the magnetic field 306 generated by the
magnet assembly 302. The magnetic field lines that are generated by themagnet assembly 302 exhibit substantial distortion that is caused by the relatively strong magnetic field that is generated by the relatively large electron ExB drift current 310. Thus, a large electron ExB drift current 310 generates a stronger magnetic field that strongly interacts with and can begin to dominate the magnetic field 306 that is generated by themagnet assembly 302. - The interaction of the magnetic field306 generated by the
magnet assembly 302 and the magnetic field generated by the electron ExB drift current 310 generates magnetic field lines that are somewhat more parallel to the surface of theinner cathode section 202 a than the magnetic field lines generated by themagnet assembly 302. The somewhat more parallel magnetic field lines allow the high-density plasma to more uniformly distribute itself in thearea 252′. Thus, the high-density plasma is substantially uniformly diffused in thearea 252′. - FIG. 4 illustrates a
graphical representation 400 of applied power as a function of time for periodic pulses applied to an initial plasma in theplasma generating system 200 of FIG. 2A. Thefirst power supply 206 generates a constant power and thesecond power supply 222 generates periodic power pulses. In one illustrative embodiment, thefeed gas 234 flows into theregion 214 between theouter cathode section 202 b and thefirst anode 210 at time t0, before either thefirst power supply 206 or thesecond power supply 222 are activated. - The time required for a sufficient quantity of
feed gas 234 to flow into theregion 214 depends on several factors including the flow rate of thefeed gas 234 and the desired operating pressure. At time t1 thefirst power supply 206 generates apower 402 that is in the range of about 0.01 kW to 100 kW and applies thepower 402 between theouter cathode section 202 b and theanode 210. Thepower 402 causes thefeed gas 234 to become at least partially ionized, thereby generating an initial plasma that can be a pre-ionization plasma as previously discussed. An additional volume of feed gas flows into the region 214 (FIG. 2A) between time t1 and time t2 substantially displacing the initial plasma. The initial plasma is displaced into theregion 252 proximate to theinner cathode section 202 a. - At time t2, the
second power supply 222 delivers a high-power pulse 404 to the initial plasma that is in the range of about 1 kW to 10 MW depending on the volume and characteristics of the plasma and the operating pressure. The high-power pulse 404 substantially super-ionizes the initial plasma to generate a high-density plasma. The high-power pulse 404 has aleading edge 406 having a rise time from t2 to t3 that is approximately in the range of 0.1 microseconds to ten seconds. In this embodiment, thesecond power supply 222 is a pulsed power supply. In some embodiments (not shown), thesecond power supply 222 can be an RF power supply, an AC power supply, or a DC power supply. - In one embodiment, the pulse width of the high-
power pulse 404 is in the range of about one microsecond to ten seconds. The high-power pulse 404 is terminated at time t4. In one embodiment, after the delivery of the high-power pulse 404, thepower 402 from thefirst power supply 206 is continuously applied to generate additional plasma from the flowingfeed gas 234, while thesecond power supply 222 prepares to deliver another high-power pulse 408. - At time t5, the
second power supply 222 delivers another high-power pulse 408 having a rise time from t5 to t6 and terminating at time t7. In one embodiment, the repetition rate of the high-power pulses is in the range of about 0.1 Hz to 10 kHz. The particular size, shape, width, and frequency of the high-power pulse 408 depend on the process parameters, such as the operating pressure, the design of thesecond power supply 222, the presence of a magnetic field proximate to theinner cathode section 202 a, and the volume and characteristics of the plasma, for example. The shape and duration of theleading edge 406 and the trailingedge 410 of the high-power pulse 404 are chosen to control the rate of ionization of the high-density plasma. - In another embodiment (not shown), the
first power supply 206 and/or thesecond power supply 222 are activated at time t0 before thefeed gas 234 flows in theregion 214. In this embodiment, thefeed gas 234 is injected between theouter cathode section 202 b and thefirst anode 210 where it is ignited by thefirst power supply 206 to generate the initial plasma. In this embodiment, the first power supply 202 is a DC power supply. In other embodiments (not shown), the first power supply 202 can an RF power supply, an AC power supply, or a pulsed power supply. - FIG. 5 illustrates a cross-sectional view of a
plasma generating apparatus 500 including themagnet assembly 302 of FIG. 3 and anadditional magnet assembly 502 according to the invention. Theadditional magnet assembly 502 can include apermanent magnets 504 as shown, or alternatively, electro-magnets (not shown). In one embodiment, themagnet assembly 502 is adapted to create amagnetic field 506 proximate to theouter cathode section 202 b. The configuration of themagnet assembly 502 can be varied depending on the desired shape and strength of themagnetic field 506. Themagnet assembly 502 can have either a balanced or unbalanced configuration. - In one embodiment, the
magnet assembly 502 includes switching electromagnets, which generate a pulsed magnetic field proximate to theouter cathode section 202 b. In some embodiments, additional magnet assemblies (not shown) can be placed at various locations around and throughout the process chamber (not shown). - One skilled in the art will appreciate that there are many modes of operating the
plasma generating apparatus 500. In one embodiment, theplasma generating apparatus 500 is operated by generating themagnetic field 506 proximate to theouter cathode section 202 b. In the embodiment shown in FIG. 5, thepermanent magnets 504 continuously generate themagnetic field 506. In other embodiments, electromagnets (not shown) generate themagnetic field 506 by energizing a current source (not shown) that is coupled to the electromagnets. In one embodiment, the strength of themagnetic field 506 is in the range of about fifty gauss to two thousand gauss. After themagnetic field 506 is generated, thefeed gas 234 from thegas source 238 is supplied between theouter cathode section 202 b and thefirst anode 210. A volume of thefeed gas 234 fills in theregion 214. - Next, the
first power supply 206 generates an electric field across thefeed gas 234 to ignite an initial plasma in theregion 214. In one embodiment, themagnetic field 506 substantially traps electrons in the initial plasma in theregion 214. This causes the initial plasma to remain concentrated in theregion 214. In one embodiment, thefirst power supply 206 applies a high-power pulse across the initial plasma thereby generating a high-density plasma in theregion 214. - The high-power pulse energizes the electrons in the initial plasma. The
magnetic field 506 causes the electrons to move in a substantially circular manner creating a substantially circular electron ExB drift current (not shown) proximate to theouter cathode section 202 b. In one embodiment, the electron ExB drift current generates a magnetic field that interacts with themagnetic field 506 generated by themagnet assembly 502. - The high-power pulses applied between the
outer cathode section 202 b and thefirst anode 210 generate secondary electrons from theouter cathode section 202 a that move in a substantially circular motion proximate to theinner cathode section 202 a according to crossed electric and magnetic fields. The substantially circular motion of the electrons generates the electron ExB drift current. The magnitude of the electron ExB drift current is proportional to the magnitude of the discharge current in the plasma and, in one embodiment, is approximately in the range of between about three and ten times the magnitude of the discharge current. As previously discussed, the electron ExB drift current can improve the homogeneity of the high-density plasma in theregion 214. - FIG. 6 illustrates a cross-sectional view of a
plasma generating apparatus 550 including themagnet assembly 302 of FIG. 3 and anadditional magnet assembly 552 according to the invention. Theadditional magnet assembly 552 can includepermanent magnets magnet assembly 552 is adapted to create amagnetic field 558 proximate to theouter cathode section 202 b. The configuration of themagnet assembly 552 can be varied depending on the desired shape and strength of themagnetic field 558. Themagnet assembly 552 can have either a balanced or unbalanced configuration. - The
plasma generating apparatus 550 functions similarly to theplasma generating apparatus 500 of FIG. 5. However, themagnetic assembly 552 that is located proximate to theouter cathode section 202 b generatesmagnetic field lines 560 that are substantially perpendicular to a surface of theouter cathode section 202 b. The perpendicularmagnetic field lines 560 completely cross theregion 214, thereby trapping substantially all of the electrons in theregion 214. Thus, themagnetic field 558 can facilitate a more efficient process of generating the initial plasma in theregion 214. Skilled artisans will appreciate that alternative magnet configurations can be used within the scope of the invention. - FIG. 7 illustrates a cross-sectional view of another embodiment of a
plasma generating apparatus 600 including amagnet assembly 602 according to the invention. Themagnet assembly 602 can includepermanent magnets 604, or alternatively, electromagnets (not shown). In one embodiment, themagnet assembly 602 is adapted to create amagnetic field 606 that is located proximate to theinner cathode section 202 a and proximate to theouter cathode section 202 b. The configuration of themagnet assembly 602 can be varied depending on the desired shape and strength of themagnetic field 606. Themagnet assembly 602 can have either a balanced or unbalanced configuration. - In one embodiment, the
magnet assembly 602 includes switching electromagnets, which generate a pulsed magnetic field proximate to the inner 202 a and theouter cathode sections 202 b. In some embodiments, additional magnet assemblies (not shown) can be placed at various locations around and throughout the process chamber (not shown). - In one embodiment, the
permanent magnets 604 continuously generate themagnetic field 606. In other embodiments, electro-magnets (not shown) generate themagnetic field 606 by energizing a current source (not shown) that is coupled to the electromagnets. In one embodiment, the strength of themagnetic field 606 is in the range of about fifty gauss to two thousand gauss. - In operation, after the
magnetic field 606 is generated, thefeed gas 234 from thegas source 238 is supplied between theouter cathode section 202 b and thefirst anode 210. A volume of thefeed gas 234 fills in theregion 214. - Next, the
first power supply 206 generates an electric field across thefeed gas 234 that ignites an initial plasma in theregion 214. In one embodiment, electrons in the initial plasma diffuse from theregion 214 to theregion 608 substantially alongmagnetic field lines 609 generated by themagnet assembly 602. In one embodiment, the electrons in the initial plasma are concentrated in theregion 608 corresponding to the weakest area of themagnetic field 606 generated by themagnet assembly 602. Thus, the initial plasma is concentrated proximate to the outer edge of theinner cathode section 202 a. - The
second power supply 222 generates a strong electric field between thesecond anode 226 and theinner cathode section 202 a. The strong electric field super-ionizes the initial plasma to generate a high-density plasma having an ion density that is greater than the ion density of the initial plasma. In one embodiment, the initial plasma has an ion density in the of about 107 to 1012 cm−3. In one embodiment, the high-density plasma has an ion density that is greater than about 1012 cm−3. - In one embodiment, the high-density plasma is used in a magnetron sputtering system (not shown). The magnetron sputtering system includes a target (not shown) that can be integrated into the
inner cathode section 202 a. Operating parameters can be chosen such that the outer edge of the target is eroded at a relatively high rate compared with the center of the target because the high-density plasma is concentrated in theregion 608. Thus, a sputtering system according to the present invention can include a target that is relatively small compared with known sputtering systems for similarly sized substrates (not shown). In addition, the power level of the high-power pulse can be chosen such that the high-density plasma can be homogeneously distributed across the target as described herein. - The
magnetic field 606 can improve the homogeneity of the high-density plasma and can increase the ion density of the high-density plasma by trapping electrons in the initial plasma and also trapping secondary electrons proximate to the target. The trapped electrons ionize excited atoms in the initial plasma thereby generating the high-density plasma. Themagnetic field 606 also promotes increased homogeneity of the high-density plasma by setting up an electron ExB drift current 610 proximate to the target. In one embodiment, the electron ExB drift current 610 generates a magnetic field that interacts with themagnetic field 606 generated by themagnet assembly 602 as described herein. - FIG. 8 illustrates a cross-sectional view of a
plasma generating apparatus 650 including a magnet configuration that includes afirst magnet 652 and asecond magnet 654 according to the invention. The first 652 and thesecond magnets 654 can be any type of magnet, such as a permanent ring-shaped magnet or an electro-magnet, for example. - The
plasma generating apparatus 650 also includes a segmented cathode 656. The segmented cathode 656 (656 a, b) includes aninner cathode section 656 a and anouter cathode section 656 b.outer cathode section 656 b is disposed generally opposite to theinner cathode section 656 a, but can be offset as shown in FIG. 8. The segmented cathode 656 illustrated in FIG. 8 can reduce sputtering contamination compared with known cathodes used in sputtering systems because both theinner cathode section 656 a and theouter cathode section 656 b can include target material (not shown). Consequently, any material that is sputtered from theouter cathode section 656 b is target material instead of cathode material that could contaminate the sputtering process. - The
plasma generating apparatus 650 also includes ananode 658. Theanode 658 is disposed proximate to theinner cathode section 656 a and theouter cathode section 656 b. In one embodiment, thefirst output 220 of thesecond power supply 222 is coupled to theinner cathode section 656 a and thesecond output 224 of thesecond power supply 222 is coupled to aninput 660 of theanode 658. - In one embodiment, a
first output 662 of afirst power supply 664 is coupled to theouter cathode section 656 b. Asecond output 666 of thefirst power supply 664 is coupled to theinput 660 of theanode 658. In one embodiment (not shown), theanode 658 is coupled to ground potential and thesecond output 224 of thesecond power supply 222 as well as thesecond output 666 of thefirst power supply 664 are also coupled to ground potential. - The
plasma generating apparatus 650 operates in a similar manner to theplasma generating apparatus 200 of FIG. 2A. However, themagnetic field 668 generated by the first 652 and thesecond magnets 654 is substantially parallel to at least a portion of the surface of theinner cathode section 656 a. The shape of themagnetic field 668 can result in a homogeneous plasma volume that is located proximate to theinner cathode section 656 a as discussed herein. Additionally, themagnetic field 668 traps substantially all of the secondary electrons from the inner 656 a and theouter cathode sections 656 b due to the configuration of the first 652 and thesecond magnets 654. - In one mode of operation, feed
gas 234 from thegas source 238 flows in theregion 214 between theanode 658 and theouter cathode section 656 b. In some embodiments, thefeed gas source 240 supplies feedgas 236 between theinner cathode section 656 a and theanode 658. Thefirst power supply 664 generates an electric field across thefeed gas 234 that generates an initial plasma in theregion 214. Electrons in the initial plasma diffuse along the magnetic field lines of themagnetic field 668. Due to the configuration of themagnets magnetic field 668. The initial plasma diffuses towards theinner cathode section 656 a as thefeed gas 234 continues to flow. - After a suitable volume of the initial plasma is located proximate to the
inner cathode section 656 a, thesecond power supply 222 generates a strong electric field between theinner cathode section 656 a and theanode 658. The strong electric field super-ionizes the initial plasma and generates a high-density plasma having an ion density that is higher than the ion density of the initial plasma. - FIG. 9 illustrates a cross-sectional view of a
plasma generating apparatus 700 according to the present invention including a segmented cathode assembly 702 (702 a, b), anionizing electrode 708, and a first 206, a second 222 and athird power supply 704. The first 206, the second 222, and thethird power supplies 704 can each be any type of power supply suitable for plasma generation, such as a pulsed power supply, a RF power supply, a DC power supply, or an AC power supply. In some embodiments, the first 206, the second 222, and/or thethird power supplies 704 operate in a constant power or constant voltage mode as described herein. - Only one portion of the segmented cathode assembly702 is shown for illustrative purposes. In one embodiment, the portion that is not shown in FIG. 9 is substantially symmetrical to the portion shown in FIG. 9. The
plasma generating apparatus 700 also includes afirst anode 210 and asecond anode 706. In one embodiment, the ionizingelectrode 708 is a filament-type electrode. The ionizingelectrode 708 can be ring-shaped or any other shape that is suitable for generating an initial plasma in theregion 214.Isolators 709 insulate theinner cathode section 702 a from theouter cathode section 702 b. Theisolators 709 also insulate thesecond anode 706 from the inner 702 a and theouter cathode sections 702 b. - A
first output 710 of thethird power supply 704 is coupled to theionizing electrode 708. Asecond output 712 of thethird power supply 704 is coupled to theouter cathode section 702 b. The power generated by thethird power supply 704 is sufficient to ignite afeed gas 234 located in theregion 214 to generate an initial plasma. - The
first output 204 of thefirst power supply 206 is coupled to theouter cathode section 702 b. Thesecond output 208 of thefirst power supply 206 is coupled to thefirst anode 210. The power generated by thefirst power supply 206 is sufficient to increase the ion density of the initial plasma in theregion 214. - The
first output 220 of thesecond power supply 222 is coupled to theinner cathode section 702 a. Thesecond output 224 of thesecond power supply 222 is coupled to thesecond anode 706. - In operation, the
first power supply 206 is a pulsed power supply that applies a high-power pulse between theouter cathode section 702 b and thefirst anode 210. The high-power pulse generates an electric field (not shown) through theregion 214. The electric field generates a high-density plasma from the initial plasma that is generated by the ionizingelectrode 708. The high-density plasma is generally more strongly ionized than the initial plasma. - In one embodiment, the
feed gas 234 continues to flow after the high-density plasma is generated in theregion 214. Thefeed gas 234 displaces the high-density plasma towards theinner cathode region 702 a. The feed gas exchange continues until a suitable volume of the high-density plasma is located proximate to theinner cathode section 702 a. - In one embodiment, the
second power supply 222 is a pulsed power supply that applies a high-power pulse across the high-density plasma. The high-power pulse generates an electric field (not shown) between theinner cathode section 702 a and thesecond anode 706. The electric field generates a plasma that is generally more strongly-ionized than the high-density plasma. - The
plasma generating apparatus 700 of the present invention generates a very high-density plasma using standard power supplies. Theplasma generating apparatus 700 of the present invention can generate a very high-density plasma at a lower cost compared with a known plasma generating apparatus because theplasma generating apparatus 700 can use relatively inexpensive and commercially available power supplies. In plasma sputtering applications, the sputtering targets that are used in theplasma generating apparatus 700 can be much smaller relative to comparable sputtering targets that are used in known magnetron sputtering systems used to process similarly sized substrates. - FIG. 10 illustrates a cross-sectional view of a
plasma generating apparatus 720 according to the present invention including a segmented cathode assembly 722 (722 a, b), acommon anode 724, anionizing electrode 708, and a first 206, a second 222, and athird power supply 704. The first 206, the second 222, and thethird power supplies 704 can each be any type of power supply suitable for plasma generation, such as a pulsed power supply, a RF power supply, a DC power supply, or an AC power supply. In some embodiments, the first 206, the second 222, and/or thethird power supplies 704 operate in a constant power or constant voltage mode as described herein. - Only one portion of the segmented cathode assembly722 is shown for illustrative purposes. In one embodiment, the portion that is not shown in FIG. 10 is substantially symmetrical to the portion shown in FIG. 10. In one embodiment, the ionizing
electrode 708 is a filament-type electrode. The ionizingelectrode 708 can be ring-shaped or any other shape that is suitable for generating an initial plasma in theregion 214. Anisolator 726 insulates theanode 724 from theinner cathode section 722 a. Anisolator 728 insulates theanode 724 from theouter cathode section 722 b. - In a plasma sputtering configuration, the segmented cathode assembly722 illustrated in FIG. 10 can reduce sputtering contamination compared with known cathodes used in sputtering systems because both the
inner cathode section 722 a and theouter cathode section 722 b can include target material (not shown). Consequently, any material that is sputtered from theouter cathode section 722 b is target material instead of cathode material that could contaminate the sputtering process. - A
first output 710 of thethird power supply 704 is coupled to theionizing electrode 708. Asecond output 712 of thethird power supply 704 is coupled to theouter cathode section 722 b. The power generated by thethird power supply 704 is sufficient to ignite afeed gas 234 located in theregion 214 to generate an initial plasma. - The
first output 204 of thefirst power supply 206 is coupled to theanode 724. Thesecond output 208 of thefirst power supply 206 is coupled to theouter cathode section 722 b. The power generated by thefirst power supply 206 is sufficient to increase the ion density of the initial plasma in theregion 214. - The
first output 220 of thesecond power supply 222 is coupled to theinner cathode section 722 a. Thesecond output 224 of thesecond power supply 222 is coupled to theanode 724. - In operation, the
first power supply 206 is a pulsed power supply that applies a high-power pulse between theouter cathode section 722 b and theanode 724. The high-power pulse generates an electric field through theregion 214. The electric field generates a high-density plasma from the initial plasma. The high-density plasma is generally more strongly ionized than the initial plasma. - In one embodiment, the
feed gas 234 continues to flow after the high-density plasma is generated in theregion 214. Thefeed gas 234 displaces the high-density plasma towards theinner cathode region 722 a. The feed gas exchange continues until a suitable volume of the high-density plasma is located proximate to theinner cathode section 722 a. - In one embodiment, the
second power supply 222 is a pulsed power supply that applies a high-power pulse across the high-density plasma. The high-power pulse generates a strong electric field between theinner cathode section 722 a and theanode 724. The strong electric field generates a plasma that is generally more strongly-ionized than the high-density plasma. - FIG. 11 illustrates a cross-sectional view of a
plasma generating apparatus 725 according to the present invention including the segmented cathode assembly 702 (702 a, b) and a first 206, a second 222 and athird power supply 704. The first 206, the second 222, and thethird power supplies 704 can each be any type of power supply suitable for plasma generation, such as a pulsed power supply, a RF power supply, a DC power supply, or an AC power supply. In some embodiments, the first 206, the second 222, and/or thethird power supplies 704 operate in a constant power or constant voltage mode as described herein. The first 206 and thethird power supplies 704 can be integrated into a single power supply. - Only one portion of the segmented cathode assembly702 is shown for illustrative purposes. In one embodiment, the portion that is not shown in FIG. 11 is substantially symmetrical to the portion shown in FIG. 11. The
plasma generating apparatus 725 also includes afirst anode 210 and asecond anode 706.Isolators 709 insulate theinner cathode section 702 a from theouter cathode section 702 b and insulate thesecond anode 706 from the inner 702 a and theouter cathode sections 702 b. - A
first output 710 of thethird power supply 704 is coupled to theouter cathode section 702 b. Asecond output 712 of thethird power supply 704 is coupled to thefirst anode 210. The power generated by thethird power supply 704 is sufficient to ignite afeed gas 234 located in theregion 214 to generate an initial plasma. - A
first output 204 of thefirst power supply 206 is coupled to theouter cathode section 702 b. Asecond output 208 of thefirst power supply 206 is coupled to thefirst anode 210. Afirst output 220 of thesecond power supply 222 is coupled to theinner cathode section 702 a. Asecond output 224 of thesecond power supply 222 is coupled to thesecond anode 706. - In operation, the power generated by the
first power supply 206 is sufficient to increase the ion density of the initial plasma in theregion 214 that is generated by thethird power supply 704. In one embodiment, thefirst power supply 206 is a pulsed power supply that applies a high-power pulse between theouter cathode section 702 b and thefirst anode 210. The high-power pulse generates an electric field through theregion 214. The electric field generates a high-density plasma from the initial plasma. The high-density plasma is generally more strongly ionized than the initial plasma. - In one embodiment, the feed,
gas 234 continues to flow after the high-density plasma is generated in theregion 214. Thefeed gas 234 displaces the high-density plasma towards theinner cathode region 702 a. The feed gas exchange continues until a suitable volume of the high-density plasma is located proximate to theinner cathode section 702 a. - In one embodiment, the
second power supply 222 is a pulsed power supply that applies a high-power pulse across the high-density plasma. The high-power pulse generates a strong electric field between theinner cathode section 702 a and thesecond anode 706. The strong electric field generates a plasma that is generally more strongly-ionized than the high-density plasma. - The
plasma generating apparatus 725 of the present invention generates a very high-density plasma using standard power supplies. Theplasma generating apparatus 725 of the present invention can generate a very high-density plasma at a lower cost compared with a known plasma generating apparatus because theplasma generating apparatus 725 can use relatively inexpensive and commercially available power supplies. - There are many modes of operation for the
plasma generating apparatus 725. For example, thefirst power supply 206 and thesecond power supply 222 can both be operated in constant power mode. In another mode of operation, thefirst power supply 206 is operated in constant power mode and thesecond power supply 222 is operated in constant voltage mode. In still another mode of operation, the first 206 and thesecond power supplies 222 are both operated in constant voltage mode. Some of these modes of operation are discussed in more detail herein. - FIG. 12 illustrates a cross-sectional view of a
plasma generating apparatus 730 according to the present invention including a segmented cathode assembly 732 (732 a, b), asecond anode 706, a first 731 and asecond power supply 222. In this embodiment, the outer cathode section is in the form of anexcited atom source 732 b. Theexcited atom source 732 b generates an initial plasma and excited atoms including metastable atoms from ground state atoms supplied by a volume offeed gas 234. The initial plasma can be a weakly-ionized plasma. In another embodiment (not shown), theouter cathode section 732 b is in the form of a hollow cathode. The cathode assembly 732 can include a target for sputtering target material. Skilled artisans will appreciate that multiple excited atom sources (not shown) can surround theinner cathode section 732 a. - The first731 and the
second power supplies 222 can be any type of power supplies suitable for plasma generation, such as pulsed power supplies, RF power supplies, DC power supplies, or AC power supplies. In some embodiments, the first 731 and/or thesecond power supplies 222 operate in a constant power, constant current, or constant voltage mode as described herein. - Only one portion of the segmented cathode assembly732 is shown for illustrative purposes. In one embodiment, the portion that is not shown is substantially symmetrical to the portion shown in FIG. 12. The
inner cathode section 732 a can be electrically isolated from theexcited atom source 732 b.Isolators 709 insulate thesecond anode 706 from theinner cathode section 732 a and theexcited atom source 732 b. - The
excited atom source 732 b includes atube 733. Thetube 733 can be formed of non-conducting material, such as a dielectric material, like boron nitride or quartz, for example. Anozzle 734 is positioned at one end of thetube 733. Thenozzle 734 can be formed from a ceramic material. Thetube 733 is surrounded by anenclosure 735. Askimmer 736 having an aperture 737 is positioned adjacent to thenozzle 734 forming anozzle chamber 738. Theskimmer 736 can be connected to theenclosure 735. In one embodiment, theskimmer 736 is cone-shaped as shown in FIG. 12. In one embodiment, theenclosure 735 and theskimmer 736 are electrically connected to ground potential. - The
tube 733 and theenclosure 735 define anelectrode chamber 739 that is in fluid communication with agas inlet 740. A feed gas source (not shown) is coupled to thegas inlet 740 so as to allowfeed gas 234 to flow into theelectrode chamber 739. Anelectrode 741 is positioned inside theelectrode chamber 739 adjacent to thenozzle 734 and to theskimmer 736. In one embodiment, theelectrode 741 is a needle electrode, as shown in FIG. 12. The needle electrode generates a relatively high electric field at the tip of the electrode. Theelectrode 741 is electrically isolated from theskimmer 736. - A
first output 742 of thefirst power supply 731 is coupled to theneedle electrode 741 with atransmission line 743. Aninsulator 744 isolates thetransmission line 743 from the groundedenclosure 735. Asecond output 745 of the first power supply 737 is coupled to ground. - A
first output 220 of thesecond power supply 222 is coupled to theinner cathode section 732 a. Asecond output 224 of thesecond power supply 222 is coupled to thesecond anode 706. In one embodiment, thesecond power supply 222 generates an electric field between theinner cathode section 732 a and thesecond anode 706. - The
plasma generating apparatus 730 of the present invention generates a high-density plasma using standard power supplies. Theplasma generating apparatus 730 of the present invention can generate a high-density plasma at a lower cost compared with known plasma generating apparatus because theplasma generating apparatus 730 can use relatively inexpensive and commercially available power supplies. In addition, the sputtering targets that can be used in theplasma generating apparatus 730 can be much smaller relative to comparable sputtering targets that are used in known magnetron sputtering systems used to process similarly sized substrates. - There are many modes of operation for the
plasma generating apparatus 730. For example, thefirst power supply 731 and thesecond power supply 222 can both be operated in constant power mode. In another mode of operation, thefirst power supply 731 is operated in constant power mode and thesecond power supply 222 is operated in constant voltage mode. In still another mode of operation, the first 731 and thesecond power supplies 222 are both operated in constant voltage mode. In another mode of operation, one or both of the first 731 and thesecond power supplies 222 are operated in a constant current mode. Some of these modes of operation are discussed in more detail herein. - In one illustrative mode of operation, ground state atoms in the volume of
feed gas 234 are supplied to theexcited atom source 732 b through thegas inlet 740. A gas valve (not shown) controls the flow of thefeed gas 234. The pressure in theelectrode chamber 739 is optimized to produce an initial plasma and exited atoms including metastable atoms by adjusting parameters, such as the flow rate of thefeed gas 234, the diameter of thenozzle 734, and the diameter of the aperture 737 of theskimmer 736. Thefirst power supply 731 generates an electric field (not shown) between theneedle electrode 741 and theskimmer 736. The electric field raises the energy of the ground state atoms to an excited state that generates the initial plasma and the excited atoms. Many of the excited atoms are metastable atoms. The electric field can also generate some ions and electrons along with the exited atoms. -
Optional magnets 746 generate amagnetic field 747 proximate to theexcited atom source 732 b. Optionally, a magnetic field can be generated proximate to theinner cathode section 732 a. The magnetic field can include magnetic field lines that are substantially parallel to theinner cathode section 732 a of the cathode assembly 732. Themagnetic field 747 can be used to assist in exciting the ground state atoms. Themagnetic field 747 traps accelerated electrons proximate to the electric field. Some of the accelerated electrons impact a portion of the ground state atoms, thereby transferring energy to those ground state atoms. This energy transfer excites at least a portion of the ground state atoms to create a volume of excited atoms including metastable atoms. Themagnets 746 can comprise a magnet assembly that can be rotated. - A portion of the volume of excited atoms as well as some ions, electrons and ground state atoms flow through the
nozzle 734 into thenozzle chamber 738 as additional feed gas flows into theelectrode chamber 739. A large fraction of the ions and electrons are trapped in thenozzle chamber 738 while the excited atoms and the ground state atoms flow through the aperture 737 of theskimmer 736. - After a sufficient volume of excited atoms including metastable atoms is present proximate to the
inner cathode section 732 a of the cathode assembly 732, thesecond power supply 222 generates an electric field (not shown) proximate to the volume of excited atoms between theinner cathode section 732 a and thesecond anode 706. The electric field super-ionizes the initial plasma by raising the energy of the initial plasma including the volume of excited atoms which causes collisions between neutral atoms, electrons, and excited atoms including metastable atoms in the initial plasma. The high-density collisions generate the high-density plasma proximate to theinner cathode section 732 a. The high-density plasma includes ions, excited atoms and additional metastable atoms. The efficiency of this multi-step ionization process increases as the density of excited atoms and metastable atoms increases. - In one embodiment, a magnetic field is generated proximate to the
inner cathode section 732 a. The magnetic field can increase the ion density of the plasma by trapping electrons in the plasma and also by trapping secondary electrons proximate to theinner cathode section 732 a. - All noble gas atoms have metastable states. For example, argon metastable atoms can be generated by a multi-step ionization process. In a first step, ionizing electrons e− are generated by applying a sufficient voltage across argon feed gas containing ground state argon atoms. When an ionizing electron e− collides with a ground state argon (Ar) atom, a metastable argon atom and an electron are generated. Argon has two metastable states, see Fabrikant, I. I., Shpenik, O. B., Snegursky, A. V., and Zavilopulo, A. N., Electron Impact Formation of Metastable Atoms, North-Holland, Amsterdam. In a second step in the multi-step ionization process, the metastable argon atom is ionized.
- The multi-step ionization process described herein substantially increases the rate at which the plasma is formed and, therefore, generates a relatively dense plasma. The rate is increased because only a relatively small amount of energy is required to ionize the metastable atoms as described herein. For example, ground state argon atoms require energy of about 15.76 eV to ionize. However, argon metastable atoms require only about 4 eV of energy to ionize. The
excited atom source 732 b provides the energies of about 11.55 eV and 11.72 eV that are necessary to reach argon metastable states. Therefore, a volume of metastable atoms will ionize at a much higher rate than a similar volume of ground state atoms for the same input energy. - Furthermore, as the density of the metastable atoms in the plasma increases, the efficiency of the ionization process rapidly increases. The increased efficiency results in an avalanche-like process that substantially increases the density of the plasma. In addition, the ions in the plasma strike the
inner cathode section 732 a causing secondary electron emission from theinner cathode section 732 a. The secondary electrons interact with ground state atoms and with the excited atoms including the metastable atoms in the plasma. This interaction further increases the density of ions in the plasma as additional volumes of metastable atoms become available. Thus, for the same input energy, the density of the plasma that is generated by the multi-step ionization process according to the present invention is significantly greater than a plasma that is generated by direct ionization of ground state atoms. - The plasma generating apparatus of the present invention can include an ion beam source (not shown) that generates an ion beam. The ion beam is directed into the high-density plasma or at a substrate or work piece being processed. The ion beam can be used to change the properties of the plasma or for ion beam assisted plasma processing.
- In some embodiments, the plasma generating apparatus of the present invention includes one or more process gas sources (not shown) that inject at least one process gas into the high-density plasma. In these embodiments, the process gas can undergo electron impact dissociation in the high-density plasma. The term “electron impact dissociation” is defined herein to mean a process whereby molecules in the process gas are broken apart by an impacting electron having energy that is above the dissociation threshold of the molecules. Electron impact dissociation is used to enhance some processes, such as plasma enhanced chemical vapor deposition (CVD).
- FIG. 13 illustrates a
graphical representation 750 of power as a function of time for each of a first 206, a second 222, and athird power supply 704 for one mode of operating theplasma generating system 700 of FIG. 9. The first 206, second 222, andthird power supplies 704 are synchronized to each other to optimize certain properties of the plasma. For example, thethird power supply 704 generates a constant power throughout the process, while the first 206 and thesecond power supplies 222 generate periodic power pulses at preset intervals. Although FIG. 13 relates to the operation of FIG. 9, skilled artisans will appreciate that theplasma generating systems plasma generating system 700 of FIG. 9. In one mode of operation, thefirst power supply 206 and thesecond power supply 222 are operated in a constant power mode. - In this mode, the
plasma generating apparatus 700 can operate as follows. At time t0, thethird power supply 704 applies aconstant power 752 in the range of about 0.1 kW to 10 kW across thefeed gas 234 to generate an initial plasma. The power level required to generate the initial plasma depends on several factors including the dimensions of theregion 214, for example. Theconstant power 752 is applied between theionizing electrode 708 and theouter cathode section 702 b. The initial plasma diffuses towards theinner cathode section 702 a due to a pressure differential as described herein. The pressure differential concentrates the initial plasma from theregion 214 towards theinner cathode section 702 a. - At time t1, the
second power supply 222 applies aconstant power 754 in the range of about 0.1 kW to 10 kW across the initial plasma to increase the ion density of the initial plasma and to sustain the initial plasma proximate to theinner cathode section 702 a. The time period between time t0 and time t1 is in the range of about 0.1 msec to 1 sec and depends on several parameters including the dimensions of theinner cathode section 702 a, for example. - At time t2, a sufficient volume of the initial plasma is located proximate to the
inner cathode section 702 a and an additional volume of initial plasma is generated in theregion 214. Thefirst power supply 206 then applies ahigh power pulse 756 across the additional volume of initial plasma in theregion 214 to generate a high-density plasma in theregion 214. The ion density of the high-density plasma is greater than the ion density of the initial plasma. The high-power pulse 756 has a power level that is in the range of about 10 kW to 1,000 kW. The time period between time t1 and time t2 is in the range of about 0.1 msec to 1 sec. - The high-density plasma that is generated in the
region 214 diffuses toward theinner cathode section 702 a due to the pressure differential. At time t3, thesecond power supply 222 applies a high-power pulse 758 to the high-density plasma in order to super-ionize the high-density plasma to further increase the plasma density. The time period between time t2 and time t3 is in the range of about 0.001 msec to 1 msec. The time period of the high-power pulse 758 between time t3 and time t4 is in the range of about 0.1 msec to 10 sec. - Additionally, between time t3 and time t5, the
first power supply 206 continues to apply the high-power pulse 756 in order to sustain the high-density plasma. At time t5, the high-power pulse 756 terminates. Thesecond power supply 222 continues to apply abackground power 760 after the high-power pulse 758 terminates at time t4. Thebackground power 760 continues to sustain the high-density plasma. The time period between time t4 and time t5 is in the range of about 0.001 msec to 1 msec. - At time t5, the
high power pulse 756 generated by thefirst power supply 206 terminates. At time t6, thefirst power supply 206 applies another high-power pulse 762 across a new volume of high-density plasma in theregion 214. The high-power pulse 762 increases the current density in the new volume of high-density plasma. The new volume of high-density plasma diffuses towards theinner cathode section 702 a. At time t7, thesecond power supply 222 applies 7, another high-power pulse 764 to the new volume of high-density plasma that is located proximate to theinner cathode section 702 a. At time t8, the high-power pulse 764 terminates. At time t9, thehigh power pulse 762 from thefirst power supply 206 terminates. - The power from the
third power supply 704 is continuously applied for a time that is in the range of about one microsecond to one hundred seconds in order to allow the initial plasma to form and to be maintained at a sufficient plasma density. The power from thesecond power supply 222 can be continuously applied after the initial plasma is ignited in order to maintain the initial plasma. Thesecond power supply 222 can be designed so as to output a continuous nominal power in order to generate and sustain the initial plasma until a high-power pulse is delivered by thesecond power supply 222. The high-power pulse has a leading edge having a rise time that is in the range of about 0.1 microseconds to ten seconds. - The high-
power pulse 756 has a power and a pulse width that is sufficient to transform the initial plasma to a strongly-ionized high-density plasma. The high-power pulse 756 is applied for a time that is in the range of about ten microseconds to ten seconds. The repetition rate of the high-power pulses - The particular size, shape, width, and frequency of the high-
power pulses first power supply 206, the design of theplasma generating apparatus 700, the volume of the plasma, and the pressure in the chamber. The shape and duration of the leading edge and the trailing edge of the high-power pulse 756 is chosen to sustain the initial plasma while controlling the rate of ionization of the high-density plasma. - FIG. 14 illustrates a
graphical representation 770 of power generated as a function of time for each of a first 206, a second 222, and athird power supply 704 for one mode of operating theplasma generating system 700 of FIG. 9. Theplasma generating apparatus 700 has many operating modes. For example, in this mode, thefirst power supply 206 is operated in voltage mode, while the second power supply can be operated in power mode. - In this mode, the
plasma generating apparatus 700 can operate as follows. At time t0, thethird power supply 704 applies aconstant power 772 in the range of about 0.1 kW to 10 kW across thefeed gas 234 to generate an initial plasma. In one embodiment, the power from thethird power supply 704 is continuously applied for a time that is in the range of about one microsecond to one hundred seconds in order to allow the initial plasma to form and to be maintained at a sufficient plasma density. - The initial plasma diffuses towards the
inner cathode section 702 a. At time t1 thesecond power supply 222 applies aconstant power 774 in the range of about 0.1 kW to 10 kW across the initial plasma to increase the ion density of the initial plasma and to maintain/sustain the initial plasma proximate to theinner cathode section 702 a. - A pressure differential forces the initial plasma from the
region 214 towards theinner cathode region 702 a. At time t2, thefirst power supply 206 applies a rampingpower pulse 776 across the initial plasma in theregion 214 in order to generate a high-density plasma in theregion 214. The rampingpower pulse 776 has a power and a rise time that is sufficient to transform the initial plasma to a strongly-ionized high-density plasma. - The ramping
power pulse 776 has a power that is in the range of about 10 kW to 1,000 kW and the rampingpower pulse 776 is applied for a time that is in the range of between about ten microseconds to ten seconds. The repetition rate between the rampingpower pulses 776 is between about 0.1 Hz and 1 kHz. The shape and duration of the leading edge and the trailing edge of the rampingpower pulse 776 is chosen to sustain the initial plasma while controlling the rate of ionization of the high-density plasma. The high-density plasma diffuses toward theinner cathode section 702 a. - At time t3, the
second power supply 222 applies a high-power pulse 778 to the high-density plasma to generate a higher-density plasma. At time t4, the high-power pulse and the rampingpower pulse 776 terminate. Thesecond power supply 222 continues to apply abackground power 780 to sustain the plasma after the high-power pulse 778 terminates. Thesecond power supply 222 can be designed so as to generate a continuous nominal power that generates and sustains the initial plasma until a high-power pulse is delivered by thesecond power supply 222. In one embodiment, the high-power pulse has a leading edge with a rise time that is in the range of about 0.1 microseconds to ten seconds. - At time t5, the
first power supply 206 applies another rampingpower pulse 782 across an additional volume of initial plasma in theregion 214. The rampingpower pulse 782 increases the current density in the additional volume of initial plasma to generate a high-density plasma. At time t6, thesecond power supply 222 applies another high-power pulse 784 to the high-density plasma that is located proximate to theinner cathode section 702 a. The high-power pulse generates a higher density plasma proximate to theinner cathode section 702 a. At time t7, the high-power pulse 784 and the rampingpower pulse 782 terminate. In one embodiment, the repetition rate between the rampingpower pulses - FIG. 15 illustrates a
graphical representation 790 of power as a function of time for each of a first 206, a second 222, and athird power supply 704 for one mode of operating theplasma generating system 700 of FIG. 9. In this mode, thesecond power supply 222 is a RF power supply. A RF power supply can be used in plasma sputtering systems for sputtering magnetic materials or dielectric materials, for example. In this mode of operation, thefirst power supply 206 is operated in a constant power mode. Due to the nature of a RF power supply, thesecond power supply 222 is operated in a substantially constant power mode. - In this mode, the
plasma generating apparatus 700 can operate as follows. At time t0, thethird power supply 704 applies aconstant power 752 in the range of about 0.1 kW to 10 kW across thefeed gas 234 to generate an initial plasma. The power level required to generate the initial plasma depends on several factors including the dimensions of theregion 214, for example. Theconstant power 752 is applied between theionizing electrode 708 and theouter cathode section 702 b. The initial plasma diffuses towards theinner cathode section 702 a due to a pressure differential as described herein. The pressure differential forces the initial plasma from theregion 214 towards theinner cathode section 702 a. - At time t1, the
second power supply 222 applies an RF driving voltage corresponding to apower 792 in the range of about 0.1 kW to 10 kW across the initial plasma to sustain the initial plasma proximate to theinner cathode section 702 a. The RF power supply generates a series of very short sinusoidal voltage pulses having a time period between time t0 and time t1 that is in the range of about 0.1 msec to 1 sec and that depends on several parameters, such as the dimensions of theinner cathode section 702 a. - At time t2, a sufficient volume of the initial plasma is located proximate to the
inner cathode section 702 a and an additional volume of initial plasma is generated in theregion 214. Thefirst power supply 206 then applies a high-power pulse 756 across the additional volume of initial plasma in theregion 214 to generate a high-density plasma in theregion 214. The ion density of the high-density plasma is greater than the ion density of the initial plasma. The high-power pulse 756 has a power level that is in the range of about 10 kW to 1,000 kW. In one embodiment, the time period between time t1 and time t2 is in the range of about 0.1 msec to 1 sec. - The high-density plasma that is generated in the
region 214 diffuses toward theinner cathode section 702 a due to the pressure differential. At time t3, thesecond power supply 222 applies a high-power RF pulse 794 to the high-density plasma. The high-power RF pulse super-ionizes the high-density plasma, thereby generating a higher-density plasma. In one embodiment, the frequency of the high-power pulse 794 is 13.56 MHz. In other embodiments, the frequency of the highpower RF pulse 794 is in the range of about 40 kHz to 100 MHz. - In one embodiment, the time period between time t2 and time t3 is in the range of about 0.001 msec to 1 msec. The total time period of the high-
power pulse 794 between time t3 and time t4 is in the range of about 0.01 microsec to 10 sec. - Additionally, between time t3 and time t5, the
first power supply 206 continues to apply the high-power pulse 756 in order to maintain the high-density plasma. At time t5, the high-power pulse 756 terminates. In one embodiment, thesecond power supply 222 continues to apply a background RF driving voltage corresponding to apower 796 after the high-power pulse 794 terminates at time t4. Thebackground RF power 796 continues to maintain the high-density plasma. The time period between time t4 and time t5 is in the range of about 0.001 msec to 1 msec. - At time t6, the
first power supply 206 applies another high-power pulse 762 across a new volume of initial plasma in theregion 214. The high-power pulse 762 generates a new volume of high-density plasma. The new volume of high-density plasma diffuses towards theinner cathode section 702 a. At time t7, thesecond power supply 222 applies RF driving voltage corresponding to another high-power pulse 798 to the new volume of high-density plasma that is located proximate to theinner cathode section 702 a. At time t8, the high-power pulse 798 terminates. At time t9, thehigh power pulse 762 from thefirst power supply 206 terminates. - The
power 752 from thethird power supply 704 is continuously applied for a time that is in the range of about one microsecond to one hundred seconds in order to allow the initial plasma to form and to be maintained at a sufficient plasma density. In one embodiment, the RF power from thesecond power supply 222 is continuously applied after the initial plasma is ignited in order to maintain the initial plasma. - The high-
power pulse 756 has a power and a pulse width that is sufficient to transform the initial plasma to a strongly-ionized high-density plasma. The high-power pulse 756 is applied for a time that is in the range of about ten microseconds to ten seconds. The repetition rate of the high-power pulses - The particular size, shape, width, and frequency of the high-
power pulses first power supply 206, the design of theplasma generating apparatus 700, the volume of the plasma, and the pressure in the chamber, for example. The shape and duration of the leading edge and the trailing edge of the high-power pulse 756 is chosen to sustain the initial plasma while controlling the rate of ionization of the high-density plasma. - FIG. 16A through FIG. 16C are
flowcharts feed gas 234 flows through theregion 214 towards theinner cathode section 202 a. Next, thefirst power supply 206 generates a voltage across thefeed gas 234 in the region 214 (step 804). The voltage generates an electric field that is large enough to ignite thefeed gas 234 and generate the initial plasma. While the initial plasma is being generated, additional feed gas flows into theregion 214 forcing the initial plasma to diffuse proximate to theinner cathode section 202 a (step 806). - After a suitable volume of the initial plasma is present in the
region 252, thesecond power supply 222 generates a large electric field across the initial plasma that super-ionizes the initial plasma, thereby generating a high-density plasma in the region 252 (step 808). The high-density plasma is typically more strongly ionized than the initial plasma. - In the process illustrated in FIG. 16B, the
feed gas 234 flows into the region 214 (step 802). In one embodiment, thefeed gas 234 flows through theregion 214 towards theinner cathode section 202 a. Next, thefirst power supply 206 generates a voltage across thefeed gas 234 in the region 214 (step 804). The voltage is large enough to ignite thefeed gas 234 and to generate the initial plasma. While the initial plasma is being generated,additional feed gas 234 flows into theregion 214 forcing the initial plasma to diffuse proximate to theinner cathode section 202 a (step 806). - Once the initial plasma is generated in the
region 214, thefirst power supply 206 generates a strong electric field across the initial plasma, thereby super-ionizing the initial plasma and creating a high-density plasma in the region 214 (step 810). In one embodiment, an additional power supply (not shown) generates the strong electric field instead of thefirst power supply 206. - The high-density plasma diffuses towards the
inner cathode section 202 a where it commingles with the initial plasma in the region 252 (step 812). When a suitable volume of the combined plasma is present in theregion 252, thesecond power supply 222 generates a strong electric field across the plasma in theregion 252 that generates a high-density plasma (step 814). The high-density plasma will typically be more strongly-ionized than the plasma formed from the combination of the initial plasma and the high-density plasma from theregion 214. - In the embodiment illustrated in FIG. 16C, the
feed gas 234 flows into the region 214 (step 816). In one embodiment, thefeed gas 234 flows through theregion 214 towards theinner cathode section 202 a. Next, thefirst power supply 206 generates a voltage across thefeed gas 234 in the region 214 (step 818). The voltage generates an electric field that is large enough to ignite thefeed gas 234 and generate the initial plasma. In this embodiment,additional feed gas 234 is not supplied to theregion 214 and therefore, the initial plasma remains in theregion 214. - Once the initial plasma is generated in the
region 214, thefirst power supply 206 generates a strong electric field across the initial plasma, thereby super-ionizing the initial plasma and creating a high-density plasma in the region 214 (step 820). In one embodiment, an additional power supply (not shown) generates the strong electric field instead of thefirst power supply 206. Once the high-density plasma is present in theregion 214,additional feed gas 234 is supplied to theregion 214, displacing the high-density plasma towards theinner cathode section 202 a (step 822). - When a suitable volume of high-density plasma is present in the
region 252, thesecond power supply 222 generates a strong electric field across the high-density plasma in theregion 252 to generate a higher-density plasma (step 824). The higher-density plasma will typically be more strongly-ionized than the high-density plasma from theregion 214. - While the invention has been particularly shown and described with reference to specific preferred embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined herein.
Claims (35)
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Also Published As
Publication number | Publication date |
---|---|
US20070034497A1 (en) | 2007-02-15 |
US6806652B1 (en) | 2004-10-19 |
US20040212311A1 (en) | 2004-10-28 |
WO2004095497A3 (en) | 2004-12-09 |
WO2004095497A2 (en) | 2004-11-04 |
US7446479B2 (en) | 2008-11-04 |
US6806651B1 (en) | 2004-10-19 |
EP1618589A2 (en) | 2006-01-25 |
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