US20040258882A1 - Polishing pad with oriented pore structure - Google Patents
Polishing pad with oriented pore structure Download PDFInfo
- Publication number
- US20040258882A1 US20040258882A1 US10/463,730 US46373003A US2004258882A1 US 20040258882 A1 US20040258882 A1 US 20040258882A1 US 46373003 A US46373003 A US 46373003A US 2004258882 A1 US2004258882 A1 US 2004258882A1
- Authority
- US
- United States
- Prior art keywords
- polishing pad
- polishing
- polymer
- polymer resin
- pores
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 183
- 239000011148 porous material Substances 0.000 title claims abstract description 53
- 239000002952 polymeric resin Substances 0.000 claims description 36
- 229920003002 synthetic resin Polymers 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 13
- -1 polyethylenes Polymers 0.000 claims description 10
- 229920001577 copolymer Polymers 0.000 claims description 9
- 229920002635 polyurethane Polymers 0.000 claims description 9
- 239000004814 polyurethane Substances 0.000 claims description 9
- 229920000098 polyolefin Polymers 0.000 claims description 8
- 239000011800 void material Substances 0.000 claims description 7
- 239000004417 polycarbonate Substances 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 5
- 229920001169 thermoplastic Polymers 0.000 claims description 5
- 229920001778 nylon Polymers 0.000 claims description 4
- 239000004416 thermosoftening plastic Substances 0.000 claims description 4
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920000570 polyether Polymers 0.000 claims description 2
- 229920002530 polyetherether ketone Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 235000019422 polyvinyl alcohol Nutrition 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 229920005749 polyurethane resin Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 29
- 238000007517 polishing process Methods 0.000 abstract description 6
- 229920000642 polymer Polymers 0.000 description 51
- 239000007789 gas Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 26
- 239000010410 layer Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 17
- 239000008187 granular material Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 238000001125 extrusion Methods 0.000 description 11
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 9
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000011541 reaction mixture Substances 0.000 description 8
- 238000000518 rheometry Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 239000004970 Chain extender Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000008351 acetate buffer Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 150000002009 diols Chemical group 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000008363 phosphate buffer Substances 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/22—Rubbers synthetic or natural
- B24D3/26—Rubbers synthetic or natural for porous or cellular structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- Y10T428/24446—Wrinkled, creased, crinkled or creped
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/268—Monolayer with structurally defined element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31591—Next to cellulosic
Definitions
- This invention pertains to a polishing pad for chemical-mechanical polishing.
- CMP Chemical-mechanical polishing
- the manufacture of semiconductor devices generally involves the formation of various process layers, selective removal or patterning of portions of those layers, and deposition of yet additional process layers above the surface of a semiconducting substrate to form a semiconductor wafer.
- the process layers can include, by way of example, insulation layers, gate oxide layers, conductive layers, and layers of metal or glass, etc. It is generally desirable in certain steps of the wafer process that the uppermost surface of the process layers be planar, i.e., flat, for the deposition of subsequent layers.
- CMP is used to planarize process layers wherein a deposited material, such as a conductive or insulating material, is polished to planarize the wafer for subsequent process steps.
- a wafer is mounted upside down on a carrier in a CMP tool.
- a force pushes the carrier and the wafer downward toward a polishing pad.
- the carrier and the wafer are rotated above the rotating polishing pad on the CMP tool's polishing table.
- a polishing composition (also referred to as a polishing slurry) generally is introduced between the rotating wafer and the rotating polishing pad during the polishing process.
- the polishing composition typically contains a chemical that interacts with or dissolves portions of the uppermost wafer layer(s) and an abrasive material that physically removes portions of the layer(s).
- the wafer and the polishing pad can be rotated in the same direction or in opposite directions, whichever is desirable for the particular polishing process being carried out.
- the carrier also can oscillate across the polishing pad on the polishing table.
- Polishing pads used in chemical-mechanical polishing processes are manufactured using both soft and rigid pad materials, which include polymer-impregnated fabrics, microporous films, cellular polymer foams, non-porous polymer sheets, and sintered thermoplastic particles.
- Non-porous polishing pads are desirable for use in polishing a variety of substrates; however, non-porous polishing pads typically have a polishing surface, which has no intrinsic ability to transport slurry particles (see, e.g., U.S. Pat. Nos. 5,489,233 and 6,203,407).
- solid polishing pads must be modified with large and/or small grooves that are cut or molded into the surface of the pad so as to provide channels for the passage of slurry during chemical-mechanical polishing.
- U.S. Pat. Nos. 6,022,268, 6,217,434, and 6,287,185 disclose solid polishing pads comprising a polishing surface that purportedly has a random surface topography including microaspersities of a dimension of 10 ⁇ m or less that are formed when solidifying the polishing surface and macro defects (or macrotexture) of a dimension of 25 ⁇ m or greater that are formed by cutting.
- Porous polishing pads typically have an inherent surface texture that can absorb and/or transport slurry. As such, porous polishing pads often can be used in polishing without the need for forming grooves on the surface of the polishing pad. Porous polishing pads can contain closed cell pores or open cell pores. Typically, the pores are spherical or nearly spherical pores, although some polishing pads comprise elongated pores that are oriented normal to the plane of the polishing pad (see, e.g., U.S. Pat. No. 4,841,680). While porous polishing pads offer many advantages over solid polishing pads in terms of cost and simplicity, porous polishing pads often do not have the most desirable physical properties (e.g., hardness, low compressibility) for certain polishing applications.
- porous polishing pads offer many advantages over solid polishing pads in terms of cost and simplicity, porous polishing pads often do not have the most desirable physical properties (e.g., hardness, low compressibility) for certain polishing applications.
- polishing pads that can provide effective planarization with satisfactory polishing efficiency and slurry flow across and/or within the polishing pad, that can be produced using low cost production methods, and that require little or no conditioning prior to use.
- the invention provides such a polishing pad.
- the invention provides a polishing pad for chemical-mechanical polishing comprising a body, a polishing surface, and a plurality of elongated pores, wherein about 10% or more of the elongated pores have an aspect ratio of about 2:1 or greater and are substantially oriented in a direction that is coplanar with the polishing surface.
- the invention further provides a method of polishing a substrate comprising (i) providing a substrate to be polished, (ii) contacting the substrate with a polishing system comprising a polishing pad of the invention and a polishing composition, and (iii) abrading at least a portion of the substrate with the polishing system to polish the substrate.
- FIG. 1 is a scanning electron micrograph (SEM) image of a portion of a polishing pad of the invention.
- the inventive polishing pad is intended for use in chemical-mechanical polishing.
- the polishing pad comprises a body, a polishing surface, and a plurality of elongated pores having an aspect ratio of about 2:1 or greater.
- the polishing surface also is referred to herein as the top surface, and the side of the polishing pad opposite the polishing surface is referred to as the bottom surface.
- About 10% or more of the pores have an aspect ratio of about 2:1 or greater (e.g., about 3:1 or greater, about 5:1 or greater, about 10:1 or greater, or about 20:1 or greater).
- about 20% or more (e.g., about 30% or more, about 40% or more, or about 50% or more) of the pores have an aspect ratio of about 2:1 or greater (e.g., about 3:1 or greater, about 5:1 or greater, about 10:1 or greater, or about 20:1 or greater).
- about 60% or more (e.g., about 70% or more, about 80% or more, or about 90% or more) of the pores have an aspect ratio of about 2:1 or greater (e.g., about 3:1 or greater, about 5:1 or greater, about 10:1 or greater, or about 20:1 or greater).
- the elongated pores are substantially oriented in a direction that is coplanar with the polishing surface of the polishing pad.
- about 50% or more (e.g., about 60% or more, or about 70% or more) of the elongated pores are substantially oriented in a direction that is coplanar with the polishing surface.
- about 80% or more (e.g., about 90% or more) of the elongated pores are substantially oriented in a direction that is coplanar with the polishing surface.
- the elongated pores desirably are oriented in a direction that is within about ⁇ 20° (e.g., about ⁇ 10°, or about ⁇ 5°) of the plane of the polishing surface.
- the substantially oriented pores can be present in any portion of the polishing pad.
- the substantially oriented pores can be present throughout the body of the polishing pad, within an upper portion of the polishing pad (i.e., the portion closer to the polishing surface), within a lower portion of the polishing pad (i.e., the portion farther away from the polishing surface and closer to the opposing bottom surface), or within both an upper and lower portion of the polishing pad (e.g., in combination with a non-porous middle portion of the polishing pad).
- the substantially oriented pores are present in about the upper 10% or more (e.g., about the top 20% or more, or about the top 30% or more) of the thickness (i.e., the distance between the polishing surface and the bottom surface of the polishing pad) of the body of the polishing pad.
- the substantially oriented pores are present in the upper portion of the polishing pad, the elongated pores also likely will be present on the polishing surface of the polishing pad.
- the substantially oriented elongated pores can function as grooves to facilitate the transport of polishing slurry across the polishing surface of the polishing pad.
- the presence of an inherent groove-like surface texture can reduce or even obviate the need to introduce grooves (e.g., macrogrooves and/or microgrooves) onto the polishing surface by external means.
- the substantially oriented pores also can be present throughout the thickness of the polishing pad. Accordingly, as the top surfaces of the polishing pad are worn away during polishing, the groove pattern can be continuously renewed.
- the polishing pad optionally further comprises a plurality of secondary pores having an aspect ratio of about 2:1 or less that may or may not be substantially oriented in a direction that is coplanar with the polishing surface.
- secondary pores are not substantially oriented in a direction that is coplanar with the polishing surface.
- Such pores will be spherical or nearly spherical.
- the secondary pores can be intermingled with the elongated pores or can be in a separate region of the polishing pad from the elongated pores.
- the elongated pores can be present in the upper about 10% to about 30% of the polishing pad, and a plurality of secondary pores can be present in the lower about 90% to about 70% of the polishing pad.
- the elongated pores are present in the upper about 10% of the polishing pad, and the secondary pores are present in the lower about 50% of the polishing pad.
- a polishing pad can function as a multi-layer polishing pad having a porous lower “subpad” layer comprising the secondary pores and a solid upper polishing layer having a groove-like elongated pore structure on the surface.
- the polishing pad can comprise, consist essentially of, or consist of any suitable material, typically a polymer resin.
- the polymer resin can be any suitable polymer resin.
- the polymer resin is a thermoplastic elastomeric polymer resin selected from the group consisting of polyurethanes, cross-linked polyurethanes, polyolefins (e.g., polyethylenes, polypropylenes, cyclic polyolefins), cross-linked polyolefins, polyvinylalcohols, polyvinylacetates, polycarbonates, polyacrylic acids, polymethylmethacrylates, polyacrylamides, nylons, fluoropolymers, polyesters, polyethers, polyarylenes, polystyrenes, polyethyleneterephthalates, polyamides, polyimides, polyaramides, polytetrafluoroethylenes, polyetheretherketones, elastomeric rubbers, polyaromatics, copolymers and block copolymers thereof
- the polishing pad can have any suitable density and any suitable void volume.
- the polishing pad has a density that is about 50% or more (e.g., about 60% or more, about 70% or more, or about 80% or more) of the maximum theoretical density of the polymer resin.
- the polishing pad typically has a void volume of about 50% or less (e.g., about 40% or less, about 30% or less, or about 20% or less).
- the void volume is about 2% or more (e.g., about 5% or more, about 10% or more, or about 15% or more).
- the polishing surface of the polishing pad optionally further comprises grooves, channels, and/or perforations, which further facilitate the lateral transport of a polishing composition across the surface of the polishing pad.
- Such grooves, channels, or perforations can be in any suitable pattern and can have any suitable depth and width.
- the polishing pad can have two or more different groove patterns, for example a combination of large grooves and small grooves as described in U.S. Pat. No. 5,489,233.
- the grooves can be in the form of slanted grooves, concentric grooves, spiral or circular grooves, or XY crosshatch pattern grooves, and can be continuous or non-continuous in connectivity.
- the polishing surface of the polishing pad optionally further comprises regions of different density, porosity, hardness, modulus, and/or compressibility.
- the different regions can have any suitable shape or dimension.
- the regions of contrasting density, porosity, hardness, and/or compressibility are formed on the polishing pad by an ex situ process (i.e., after the polishing pad is formed).
- the polishing pad optionally further comprises one or more apertures, transparent regions, or translucent regions (e.g., windows as described in U.S. Pat. No. 5,893,796).
- the inclusion of such apertures or translucent regions is desirable when the polishing pad is to be used in conjunction with an in situ CMP process monitoring technique.
- the aperture can have any suitable shape and may be used in combination with drainage channels for minimizing or eliminating excess polishing composition on the polishing surface.
- the translucent region or window can be any suitable window, many of which are known in the art.
- the translucent region can comprise a glass or polymer-based plug that is inserted in an aperture of the polishing pad or may comprise the same polymeric material used in the remainder of the polishing pad.
- the translucent regions have a light transmittance of about 10% or more (e.g., about 20% or more, or about 30% or more) at at least one wavelength in the range of about 200 nm to about 10,000 nm (e.g., about 200 nm to about 1,000 nm, or about 200 nm to about 780 nm).
- the polishing pad of the invention can be produced by any suitable method.
- the polishing pad is produced by extrusion of a polymer resin.
- the oriented pore structure is produced by extrusion of polymer granules (or pellets or flakes) that contain trapped gas bubbles (e.g., air bubbles).
- polymer granules can be formed from a polymer cake containing trapped gas bubbles by cutting the polymer cake into small pieces and then pulverizing the pieces into granules.
- the gas bubble-containing polymer cake can be produced from a polymer reaction mixture (e.g., a polyurethane reaction mixture comprising a diisocyanate hard segment, a polyol soft segment, and a diol chain extender) into which gas is introduced.
- the gas can be any suitable gas and preferably is air.
- the amount of gas introduced into the polymer reaction mixture can be any suitable amount.
- the amount of gas introduced into the reaction mixture can be about 10% to about 50% by volume.
- the viscosity of the reaction mixture increases such that the gas becomes trapped in the polymer mixture and resulting polymer cake.
- the reaction mixture is stirred at a high rate during polymer formation to optimize the entrapment of the gas.
- the polymer cake desirably comprises about 10% to about 50% gas bubbles by volume.
- the gas bubble-containing pellets or granules preferably are not extruded into polymer pellets before being extruded into a polymer sheet (as is typically done in extrusion processes) since such a preliminary extrusion step could result in the release of the trapped gas bubbles from the polymer granules.
- the polymer granules formed from the gas bubble-containing polymer cake can be converted into a polymer sheet containing elongated oriented pores by extruding the polymer granules under carefully controlled extrusion conditions.
- the extrusion parameters such as temperature and pressure should be carefully controlled to prevent premature release of the trapped gas bubbles.
- the particular extrusion conditions will of course depend at least in part on the type of polymer resin being extruded and the degree of pore orientation that is desired.
- the polishing pad of the invention is produced by forcing gas into a polymer sheet having an oriented polymer structure.
- a polymer sheet having an oriented polymer structure can be produced by extrusion of a high molecular weight polymer that has a long relaxation time.
- the polymer sheet can be subjected to a pressurized gas injection process, which foams the polymer sheet.
- the pressurized gas injection process involves the use of high temperatures and pressures to force a supercritical fluid gas into a polymer sheet comprising an amorphous polymer resin.
- the polymer resin can be any of the polymer resins described above.
- the extruded polymer sheet is placed at room temperature into a pressure vessel.
- a supercritical gas e.g., N 2 or CO 2
- the vessel is pressurized to a level sufficient to force an appropriate amount of the gas into the free volume of the polymer sheet.
- the amount of gas dissolved in the polymer is directly proportional to the applied pressure according to Henry's law. Increasing the temperature of the polymer sheet increases the rate of diffusion of the gas into the polymer, but also decreases the amount of gas that can dissolve in the polymer sheet.
- the sheet is removed from the pressurized vessel. If desired, the polymer sheet can be quickly heated to a softened or molten state if necessary to promote cell nucleation and growth.
- U.S. Pat. Nos. 5,182,307 and 5,684,055 describe these and additional features of the pressurized gas injection process.
- the polishing pad of the invention can be first extruded from polymer granules containing trapped gas to form a polymer sheet having oriented elongated pores, and then subjected to the foaming process described above to produce a polishing pad having a combination of elongated oriented pores and secondary pores having an aspect ratio of about 2:1 or less.
- the selection of the polymer resin will depend, in part, on the rheology of the polymer resin.
- Rheology is the flow behavior of a polymer melt.
- the viscosity is a constant defined by the ratio between the shear stress (i.e., tangential stress, ⁇ ) and the shear rate (i.e., velocity gradient, d ⁇ /dt).
- shear rate thickening i.e., tangential stress, ⁇
- shear rate thinning pseudo-plastic
- the viscosity decreases with increasing shear rate.
- the rheology of the polymer resins must be determined.
- the rheology can be determined by a capillary technique in which the molten polymer resin is forced under a fixed pressure through a capillary of a particular length. By plotting the apparent shear rate versus viscosity at different temperatures, the relationship between the viscosity and temperature can be determined.
- the Rheology Processing Index (RPI) is a parameter that identifies the critical range of the polymer resin.
- the RPI is the ratio of the viscosity at a reference temperature to the viscosity after a change in temperature equal to 20° C. for a fixed shear rate.
- the RPI preferably is about 2 to about 10 (e.g., about 3 to about 8) when measured at a shear rate of about 150 1/s and a temperature of about 205° C.
- the polymer resin has a viscosity of about 700 Pa.s or greater (e.g., about 1000 Pa.s or greater, about 1500 Pa.s or greater, about 2000 Pa.s or greater, or about 2500 Pa.s or greater) at a shear rate of about 18.6 s ⁇ 1 and a temperature of about 210° C.
- MFI Melt Flow Index
- the MFI preferably is about 5 or less (e.g., about 4 or less) over 10 minutes at a temperature of 210° C. and a load of 2160 g.
- the MFI preferably is about 8 or less (e.g., about 5 or less) over 10 minutes at a temperature of 210° C. and a load of 2160 g.
- the rheology of the polymer resin can depend on the molecular weight, polydispersity index (PDI), the degree of long-chain branching or cross-linking, glass transition temperature (T g ), and melt temperature (T m ) of the polymer resin.
- PDI polydispersity index
- T g glass transition temperature
- T m melt temperature of the polymer resin.
- M w weight average molecular weight
- M w is typically about 100,000 g/mol or more (e.g., about 200,000 g/mol or more, or about 300,000 g/mol or more), with a PDI of about 1.1 to about 6, preferably about 2 to about 4.
- the thermoplastic polyurethane has a glass transition temperature of about 20° C. to about 110° C. and a melt transition temperature of about 120° C. to about 250° C.
- the weight average molecular weight (M w ) typically is about 100,000 g/mol to about 400,000 g/mol, preferably about 150,000 g/mol to about 300,000 g/mol, with a PDI of about 1.1 to about 12, preferably about 2 to about 10.
- the weight average molecular weight (M w ) typically is about 50,000 g/mol to about 150,000 g/mol, preferably about 70,000 g/mol to about 100,000 g/mol, with a PDI of about 1.1 to about 5, preferably about 2 to about 4.
- the polymer resin selected for the porous foam preferably has certain mechanical properties.
- the Flexural Modulus (ASTM D790) preferably is about 500 MPa to about 1500 MPa, the average % compressibility is about 7 or less, the average % rebound is about 35 or greater, and the Shore D hardness (ASTM D2240-95) is about 40 to about 90 (e.g., about 50 to about 80).
- the top surface of the polishing pad has a surface roughness of about 1 to about 3 micron Ra.
- the polishing pad is particularly suited for use in conjunction with a chemical-mechanical polishing (“CMP”) apparatus.
- the apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad of the invention in contact with the platen and moving with the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving relative to the surface of the polishing pad intended to contact a substrate to be polished.
- the polishing of the substrate takes place by the substrate being placed in contact with the polishing pad and then the polishing pad moving relative to the substrate, typically with a polishing composition therebetween, so as to abrade at least a portion of the substrate to polish the substrate.
- the CMP apparatus can be any suitable CMP apparatus, many of which are known in the art.
- the polishing pad of the invention also can be used with linear polishing tools.
- the polishing pad can be used alone or optionally can be mated to a polishing subpad.
- the subpad can be any suitable subpad. Suitable subpads include polyurethane foam subpads (e.g., Poron® foam subpads commercially available from Rogers Corporation), impregnated felt subpads, microporous polyurethane subpads, or sintered urethane subpads.
- the subpad typically is softer than the polishing pad of the invention and therefore is more compressible and has a lower Shore hardness value than the polishing pad of the invention.
- the subpad can have a Shore A hardness of about 35 to about 50.
- the subpad is harder, is less compressible, and has a higher Shore hardness than the polishing pad.
- the subpad optionally comprises grooves, channels, hollow sections, windows, apertures, and the like.
- the subpad can be affixed to the polishing layer by any suitable means.
- the polishing layer and subpad can be affixed through adhesives or can be attached via welding or similar technique.
- an intermediate backing layer such as a polyethyleneterephthalate film is disposed between the polishing pad and the subpad.
- the polishing pad of the invention is suitable for use in a method of polishing many types of substrates (e.g., wafers) and substrate materials.
- the method comprises (i) providing a substrate to be polished, (ii) contacting the substrate with a polishing system comprising a polishing pad of the invention and a polishing composition, and (iii) abrading at least a portion of the substrate with the polishing system to polish the substrate.
- Suitable substrates include memory storage devices, glass substrates, memory or rigid disks, metals (e.g., noble metals), magnetic heads, inter-layer dielectric (ILD) layers, polymeric films, low and high dielectric constant films, ferroelectrics, micro-electro-mechanical systems (MEMS), semiconductor wafers, field emission displays, and other microelectronic substrates, especially microelectronic substrates comprising insulating layers (e.g., metal oxide, silicon nitride, or low dielectric materials) and/or metal-containing layers (e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium, iridium, alloys thereof, and mixtures thereof).
- insulating layers e.g., metal oxide, silicon nitride, or low dielectric materials
- metal-containing layers e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium,
- memory or rigid disk refers to any magnetic disk, hard disk, rigid disk, or memory disk for retaining information in electromagnetic form.
- Memory or rigid disks typically have a surface that comprises nickel-phosphorus, but the surface can comprise any other suitable material.
- Suitable metal oxide insulating layers include, for example, alumina, silica, titania, ceria, zirconia, germania, magnesia, and combinations thereof.
- the substrate can comprise, consist essentially of, or consist of any suitable metal composite.
- Suitable metal composites include, for example, metal nitrides (e.g., tantalum nitride, titanium nitride, and tungsten nitride), metal carbides (e.g., silicon carbide and tungsten carbide), nickel-phosphorus, alumino-borosilicate, borosilicate glass, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), silicon/germanium alloys, and silicon/germanium/carbon alloys.
- the substrate also can comprise, consist essentially of, or consist of any suitable semiconductor base material. Suitable semiconductor base materials include single-crystal silicon, poly-crystalline silicon, amorphous silicon, silicon-on-insulator, and gallium arsenide.
- the polishing composition comprises a liquid carrier (e.g., water) and optionally one or more additives selected from the group consisting of abrasives (e.g., alumina, silica, titania, ceria, zirconia, germania, magnesia, and combinations thereof), oxidizers (e.g., hydrogen peroxide and ammonium persulfate), corrosion inhibitors (e.g., benzotriazole), film-forming agents (e.g., polyacrylic acid and polystyrenesulfonic acid), complexing agents (e.g., mono-, di-, and poly-carboxylic acids, phosphonic acids, and sulfonic acids), pH adjustors (e.g., hydrochloric acid, sulfuric acid, phosphoric acid, sodium hydroxide, potassium hydroxide, and ammonium hydroxide), buffering agents (e.g., phosphate buffers, acetate buffers, and sulfate buffers
- This example further illustrates the invention but, of course, should not be construed as in any way limiting its scope.
- this example illustrates a method of producing a polishing pad of the invention containing oriented pores.
- Thermoplastic polyurethane was prepared by a batch process involving reaction of methyldiphenyldiisocyanate with a polyol and 1,4-butanediol. During the polymer synthesis, air (35% by volume) was introduced into the polymer reaction mixture. As the viscosity of the polymer reaction mixture increased due to formation of the polymer, the air (25% by volume) became trapped in the polymer cake. The polymer cake was cut into small pieces and was converted into granules (or flakes) using a hammer.
- thermoplastic polyurethane granules are given in Table 1, where DMA, DSC, and GPC refer to Dynamic Mechanical Analysis, Differential Scanning Calorimetry, and Gel Permeation Chromatography, respectively. TABLE 1 Shore D Hardness 75 D Density 0.86 g/cm 3 Peak T g (DMA) 56° C. T m range (DSC) 120-180° C. Melt Flow Index at 210° C. 1.6 g/10 min M w (GPC) 175,000 g/mol M n (GPC) 65,000 g/mol M w /M n (PDI) 2.7 RPI @ shear rates 150 l/s, ref. temp. 205° C. 2.8 Flexural Modulus 1241 MPa Young's Modulus at 25° C. 814 MPa Ultimate Tensile Strength 53 MPa Ultimate Elongation 355%
- thermoplastic polyurethane granules were then placed into an extruder and extruded under the conditions described in Table 2. TABLE 2 Zone 1 Temperature 175° C. Zone 2 Temperature 191° C. Zone 3 Temperature 196° C. Zone 4 Temperature 204° C. Zone 5 Temperature 191° C. Die 1 Temperature 193° C. Die 2 Temperature 194° C. Melt Temperature 213° C. Die Pressure 7.72 MPa Screw Speed 20 rpm
- polishing pads comprising substantially oriented elongated pores can be produced by extrusion of polymer granules comprising trapped gas bubbles under mild conditions.
Abstract
Description
- This invention pertains to a polishing pad for chemical-mechanical polishing.
- Chemical-mechanical polishing (“CMP”) processes are used in the manufacturing of microelectronic devices to form flat surfaces on semiconductor wafers, field emission displays, and many other microelectronic substrates. For example, the manufacture of semiconductor devices generally involves the formation of various process layers, selective removal or patterning of portions of those layers, and deposition of yet additional process layers above the surface of a semiconducting substrate to form a semiconductor wafer. The process layers can include, by way of example, insulation layers, gate oxide layers, conductive layers, and layers of metal or glass, etc. It is generally desirable in certain steps of the wafer process that the uppermost surface of the process layers be planar, i.e., flat, for the deposition of subsequent layers. CMP is used to planarize process layers wherein a deposited material, such as a conductive or insulating material, is polished to planarize the wafer for subsequent process steps.
- In a typical CMP process, a wafer is mounted upside down on a carrier in a CMP tool. A force pushes the carrier and the wafer downward toward a polishing pad. The carrier and the wafer are rotated above the rotating polishing pad on the CMP tool's polishing table. A polishing composition (also referred to as a polishing slurry) generally is introduced between the rotating wafer and the rotating polishing pad during the polishing process. The polishing composition typically contains a chemical that interacts with or dissolves portions of the uppermost wafer layer(s) and an abrasive material that physically removes portions of the layer(s). The wafer and the polishing pad can be rotated in the same direction or in opposite directions, whichever is desirable for the particular polishing process being carried out. The carrier also can oscillate across the polishing pad on the polishing table.
- Polishing pads used in chemical-mechanical polishing processes are manufactured using both soft and rigid pad materials, which include polymer-impregnated fabrics, microporous films, cellular polymer foams, non-porous polymer sheets, and sintered thermoplastic particles. Non-porous polishing pads are desirable for use in polishing a variety of substrates; however, non-porous polishing pads typically have a polishing surface, which has no intrinsic ability to transport slurry particles (see, e.g., U.S. Pat. Nos. 5,489,233 and 6,203,407). Accordingly, these solid polishing pads must be modified with large and/or small grooves that are cut or molded into the surface of the pad so as to provide channels for the passage of slurry during chemical-mechanical polishing. For example, U.S. Pat. Nos. 6,022,268, 6,217,434, and 6,287,185 disclose solid polishing pads comprising a polishing surface that purportedly has a random surface topography including microaspersities of a dimension of 10 μm or less that are formed when solidifying the polishing surface and macro defects (or macrotexture) of a dimension of 25 μm or greater that are formed by cutting.
- Porous polishing pads typically have an inherent surface texture that can absorb and/or transport slurry. As such, porous polishing pads often can be used in polishing without the need for forming grooves on the surface of the polishing pad. Porous polishing pads can contain closed cell pores or open cell pores. Typically, the pores are spherical or nearly spherical pores, although some polishing pads comprise elongated pores that are oriented normal to the plane of the polishing pad (see, e.g., U.S. Pat. No. 4,841,680). While porous polishing pads offer many advantages over solid polishing pads in terms of cost and simplicity, porous polishing pads often do not have the most desirable physical properties (e.g., hardness, low compressibility) for certain polishing applications.
- Accordingly, there remains a need for polishing pads that can provide effective planarization with satisfactory polishing efficiency and slurry flow across and/or within the polishing pad, that can be produced using low cost production methods, and that require little or no conditioning prior to use. The invention provides such a polishing pad. These and other advantages of the invention, as well as additional inventive features, will be apparent from the description of the invention provided herein.
- The invention provides a polishing pad for chemical-mechanical polishing comprising a body, a polishing surface, and a plurality of elongated pores, wherein about 10% or more of the elongated pores have an aspect ratio of about 2:1 or greater and are substantially oriented in a direction that is coplanar with the polishing surface. The invention further provides a method of polishing a substrate comprising (i) providing a substrate to be polished, (ii) contacting the substrate with a polishing system comprising a polishing pad of the invention and a polishing composition, and (iii) abrading at least a portion of the substrate with the polishing system to polish the substrate.
- FIG. 1 is a scanning electron micrograph (SEM) image of a portion of a polishing pad of the invention.
- The inventive polishing pad is intended for use in chemical-mechanical polishing. The polishing pad comprises a body, a polishing surface, and a plurality of elongated pores having an aspect ratio of about 2:1 or greater. The polishing surface also is referred to herein as the top surface, and the side of the polishing pad opposite the polishing surface is referred to as the bottom surface. About 10% or more of the pores have an aspect ratio of about 2:1 or greater (e.g., about 3:1 or greater, about 5:1 or greater, about 10:1 or greater, or about 20:1 or greater). Desirably, about 20% or more (e.g., about 30% or more, about 40% or more, or about 50% or more) of the pores have an aspect ratio of about 2:1 or greater (e.g., about 3:1 or greater, about 5:1 or greater, about 10:1 or greater, or about 20:1 or greater). Preferably, about 60% or more (e.g., about 70% or more, about 80% or more, or about 90% or more) of the pores have an aspect ratio of about 2:1 or greater (e.g., about 3:1 or greater, about 5:1 or greater, about 10:1 or greater, or about 20:1 or greater).
- The elongated pores are substantially oriented in a direction that is coplanar with the polishing surface of the polishing pad. Preferably, about 50% or more (e.g., about 60% or more, or about 70% or more) of the elongated pores are substantially oriented in a direction that is coplanar with the polishing surface. More preferably, about 80% or more (e.g., about 90% or more) of the elongated pores are substantially oriented in a direction that is coplanar with the polishing surface. The elongated pores desirably are oriented in a direction that is within about ±20° (e.g., about ±10°, or about ±5°) of the plane of the polishing surface.
- The substantially oriented pores can be present in any portion of the polishing pad. For example, the substantially oriented pores can be present throughout the body of the polishing pad, within an upper portion of the polishing pad (i.e., the portion closer to the polishing surface), within a lower portion of the polishing pad (i.e., the portion farther away from the polishing surface and closer to the opposing bottom surface), or within both an upper and lower portion of the polishing pad (e.g., in combination with a non-porous middle portion of the polishing pad). Typically, the substantially oriented pores are present in about the upper 10% or more (e.g., about the top 20% or more, or about the top 30% or more) of the thickness (i.e., the distance between the polishing surface and the bottom surface of the polishing pad) of the body of the polishing pad.
- When the substantially oriented pores are present in the upper portion of the polishing pad, the elongated pores also likely will be present on the polishing surface of the polishing pad. As such, the substantially oriented elongated pores can function as grooves to facilitate the transport of polishing slurry across the polishing surface of the polishing pad. The presence of an inherent groove-like surface texture can reduce or even obviate the need to introduce grooves (e.g., macrogrooves and/or microgrooves) onto the polishing surface by external means. The substantially oriented pores also can be present throughout the thickness of the polishing pad. Accordingly, as the top surfaces of the polishing pad are worn away during polishing, the groove pattern can be continuously renewed.
- The polishing pad optionally further comprises a plurality of secondary pores having an aspect ratio of about 2:1 or less that may or may not be substantially oriented in a direction that is coplanar with the polishing surface. Preferably such secondary pores are not substantially oriented in a direction that is coplanar with the polishing surface. Such pores will be spherical or nearly spherical. The secondary pores can be intermingled with the elongated pores or can be in a separate region of the polishing pad from the elongated pores. For example, the elongated pores can be present in the upper about 10% to about 30% of the polishing pad, and a plurality of secondary pores can be present in the lower about 90% to about 70% of the polishing pad. In one embodiment, the elongated pores are present in the upper about 10% of the polishing pad, and the secondary pores are present in the lower about 50% of the polishing pad. Such a polishing pad can function as a multi-layer polishing pad having a porous lower “subpad” layer comprising the secondary pores and a solid upper polishing layer having a groove-like elongated pore structure on the surface.
- The polishing pad can comprise, consist essentially of, or consist of any suitable material, typically a polymer resin. The polymer resin can be any suitable polymer resin. Preferably, the polymer resin is a thermoplastic elastomeric polymer resin selected from the group consisting of polyurethanes, cross-linked polyurethanes, polyolefins (e.g., polyethylenes, polypropylenes, cyclic polyolefins), cross-linked polyolefins, polyvinylalcohols, polyvinylacetates, polycarbonates, polyacrylic acids, polymethylmethacrylates, polyacrylamides, nylons, fluoropolymers, polyesters, polyethers, polyarylenes, polystyrenes, polyethyleneterephthalates, polyamides, polyimides, polyaramides, polytetrafluoroethylenes, polyetheretherketones, elastomeric rubbers, polyaromatics, copolymers and block copolymers thereof, and mixtures and blends thereof. More preferably, the polymer resin is a thermoplastic polyurethane resin.
- The polishing pad can have any suitable density and any suitable void volume. Typically, the polishing pad has a density that is about 50% or more (e.g., about 60% or more, about 70% or more, or about 80% or more) of the maximum theoretical density of the polymer resin. Accordingly, the polishing pad typically has a void volume of about 50% or less (e.g., about 40% or less, about 30% or less, or about 20% or less). Preferably, the void volume is about 2% or more (e.g., about 5% or more, about 10% or more, or about 15% or more).
- The polishing surface of the polishing pad optionally further comprises grooves, channels, and/or perforations, which further facilitate the lateral transport of a polishing composition across the surface of the polishing pad. Such grooves, channels, or perforations can be in any suitable pattern and can have any suitable depth and width. The polishing pad can have two or more different groove patterns, for example a combination of large grooves and small grooves as described in U.S. Pat. No. 5,489,233. The grooves can be in the form of slanted grooves, concentric grooves, spiral or circular grooves, or XY crosshatch pattern grooves, and can be continuous or non-continuous in connectivity.
- The polishing surface of the polishing pad optionally further comprises regions of different density, porosity, hardness, modulus, and/or compressibility. The different regions can have any suitable shape or dimension. Typically, the regions of contrasting density, porosity, hardness, and/or compressibility are formed on the polishing pad by an ex situ process (i.e., after the polishing pad is formed).
- The polishing pad optionally further comprises one or more apertures, transparent regions, or translucent regions (e.g., windows as described in U.S. Pat. No. 5,893,796). The inclusion of such apertures or translucent regions is desirable when the polishing pad is to be used in conjunction with an in situ CMP process monitoring technique. The aperture can have any suitable shape and may be used in combination with drainage channels for minimizing or eliminating excess polishing composition on the polishing surface. The translucent region or window can be any suitable window, many of which are known in the art. For example, the translucent region can comprise a glass or polymer-based plug that is inserted in an aperture of the polishing pad or may comprise the same polymeric material used in the remainder of the polishing pad. Typically, the translucent regions have a light transmittance of about 10% or more (e.g., about 20% or more, or about 30% or more) at at least one wavelength in the range of about 200 nm to about 10,000 nm (e.g., about 200 nm to about 1,000 nm, or about 200 nm to about 780 nm).
- The polishing pad of the invention can be produced by any suitable method. Typically the polishing pad is produced by extrusion of a polymer resin. In one embodiment, the oriented pore structure is produced by extrusion of polymer granules (or pellets or flakes) that contain trapped gas bubbles (e.g., air bubbles). Such polymer granules can be formed from a polymer cake containing trapped gas bubbles by cutting the polymer cake into small pieces and then pulverizing the pieces into granules. The gas bubble-containing polymer cake can be produced from a polymer reaction mixture (e.g., a polyurethane reaction mixture comprising a diisocyanate hard segment, a polyol soft segment, and a diol chain extender) into which gas is introduced. The gas can be any suitable gas and preferably is air. The amount of gas introduced into the polymer reaction mixture can be any suitable amount. For example, the amount of gas introduced into the reaction mixture can be about 10% to about 50% by volume. During polymer formation, the viscosity of the reaction mixture increases such that the gas becomes trapped in the polymer mixture and resulting polymer cake. Preferably, the reaction mixture is stirred at a high rate during polymer formation to optimize the entrapment of the gas. The polymer cake desirably comprises about 10% to about 50% gas bubbles by volume. Unlike typical extrusion processes, the gas bubble-containing pellets or granules preferably are not extruded into polymer pellets before being extruded into a polymer sheet (as is typically done in extrusion processes) since such a preliminary extrusion step could result in the release of the trapped gas bubbles from the polymer granules.
- The polymer granules formed from the gas bubble-containing polymer cake can be converted into a polymer sheet containing elongated oriented pores by extruding the polymer granules under carefully controlled extrusion conditions. The extrusion parameters such as temperature and pressure should be carefully controlled to prevent premature release of the trapped gas bubbles. The particular extrusion conditions will of course depend at least in part on the type of polymer resin being extruded and the degree of pore orientation that is desired.
- In another embodiment, the polishing pad of the invention is produced by forcing gas into a polymer sheet having an oriented polymer structure. A polymer sheet having an oriented polymer structure can be produced by extrusion of a high molecular weight polymer that has a long relaxation time. Once the polymer sheet is produced, the polymer sheet can be subjected to a pressurized gas injection process, which foams the polymer sheet. The pressurized gas injection process involves the use of high temperatures and pressures to force a supercritical fluid gas into a polymer sheet comprising an amorphous polymer resin. The polymer resin can be any of the polymer resins described above. The extruded polymer sheet is placed at room temperature into a pressure vessel. A supercritical gas (e.g., N2 or CO2) is added to the vessel, and the vessel is pressurized to a level sufficient to force an appropriate amount of the gas into the free volume of the polymer sheet. The amount of gas dissolved in the polymer is directly proportional to the applied pressure according to Henry's law. Increasing the temperature of the polymer sheet increases the rate of diffusion of the gas into the polymer, but also decreases the amount of gas that can dissolve in the polymer sheet. Once the gas has sufficiently saturated the polymer, the sheet is removed from the pressurized vessel. If desired, the polymer sheet can be quickly heated to a softened or molten state if necessary to promote cell nucleation and growth. U.S. Pat. Nos. 5,182,307 and 5,684,055 describe these and additional features of the pressurized gas injection process.
- In yet another embodiment, the polishing pad of the invention can be first extruded from polymer granules containing trapped gas to form a polymer sheet having oriented elongated pores, and then subjected to the foaming process described above to produce a polishing pad having a combination of elongated oriented pores and secondary pores having an aspect ratio of about 2:1 or less.
- The selection of the polymer resin will depend, in part, on the rheology of the polymer resin. Rheology is the flow behavior of a polymer melt. For Newtonian fluids, the viscosity is a constant defined by the ratio between the shear stress (i.e., tangential stress, σ) and the shear rate (i.e., velocity gradient, dγ/dt). However, for non-Newtonian fluids, shear rate thickening (dilatent) or shear rate thinning (pseudo-plastic) may occur. In shear rate thinning cases, the viscosity decreases with increasing shear rate. It is this property that allows a polymer resin to be used in melt fabrication (e.g., extrusion, injection molding) processes. In order to identify the critical region of shear rate thinning, the rheology of the polymer resins must be determined. The rheology can be determined by a capillary technique in which the molten polymer resin is forced under a fixed pressure through a capillary of a particular length. By plotting the apparent shear rate versus viscosity at different temperatures, the relationship between the viscosity and temperature can be determined. The Rheology Processing Index (RPI) is a parameter that identifies the critical range of the polymer resin. The RPI is the ratio of the viscosity at a reference temperature to the viscosity after a change in temperature equal to 20° C. for a fixed shear rate. When the polymer resin is thermoplastic polyurethane, the RPI preferably is about 2 to about 10 (e.g., about 3 to about 8) when measured at a shear rate of about 150 1/s and a temperature of about 205° C. Preferably, the polymer resin has a viscosity of about 700 Pa.s or greater (e.g., about 1000 Pa.s or greater, about 1500 Pa.s or greater, about 2000 Pa.s or greater, or about 2500 Pa.s or greater) at a shear rate of about 18.6 s−1 and a temperature of about 210° C.
- Another polymer viscosity measurement is the Melt Flow Index (MFI) which records the amount of molten polymer (in grams) that is extruded from a capillary at a given temperature and pressure over a fixed amount of time. For example, when the polymer resin is thermoplastic polyurethane or polyurethane copolymer (e.g., a polycarbonate silicone-based copolymer, a polyurethane fluorine-based copolymer, or a polyurethane siloxane-segmented copolymer), the MFI preferably is about 40 or less (e.g., about 30 or less, or about 20 or less) over 10 minutes at a temperature of 210° C. and a load of 2160 g. When the polymer resin is a thermoplastic elastomeric polyolefin or a polyolefin copolymer (e.g., a copolymer comprising an ethylene α-olefin such as elastomeric or normal ethylene-propylene, ethlene-hexene, ethylene-octene, and the like, an elastomeric ethylene copolymer made from metallocene based catalysts, or a polypropylene-styrene copolymer), the MFI preferably is about 5 or less (e.g., about 4 or less) over 10 minutes at a temperature of 210° C. and a load of 2160 g. When the polymer resin is a nylon or polycarbonate, the MFI preferably is about 8 or less (e.g., about 5 or less) over 10 minutes at a temperature of 210° C. and a load of 2160 g.
- The rheology of the polymer resin can depend on the molecular weight, polydispersity index (PDI), the degree of long-chain branching or cross-linking, glass transition temperature (Tg), and melt temperature (Tm) of the polymer resin. When the polymer resin is thermoplastic polyurethane or polyurethane copolymer (such as the copolymers described above), the weight average molecular weight (Mw) is typically about 100,000 g/mol or more (e.g., about 200,000 g/mol or more, or about 300,000 g/mol or more), with a PDI of about 1.1 to about 6, preferably about 2 to about 4. Typically, the thermoplastic polyurethane has a glass transition temperature of about 20° C. to about 110° C. and a melt transition temperature of about 120° C. to about 250° C. When the polymer resin is an elastomeric polyolefin or a polyolefin copolymer (such as the copolymers described above), the weight average molecular weight (Mw) typically is about 100,000 g/mol to about 400,000 g/mol, preferably about 150,000 g/mol to about 300,000 g/mol, with a PDI of about 1.1 to about 12, preferably about 2 to about 10. When the polymer resin is nylon or polycarbonate, the weight average molecular weight (Mw) typically is about 50,000 g/mol to about 150,000 g/mol, preferably about 70,000 g/mol to about 100,000 g/mol, with a PDI of about 1.1 to about 5, preferably about 2 to about 4.
- The polymer resin selected for the porous foam preferably has certain mechanical properties. For example, when the polymer resin is a thermoplastic polyurethane, the Flexural Modulus (ASTM D790) preferably is about 500 MPa to about 1500 MPa, the average % compressibility is about 7 or less, the average % rebound is about 35 or greater, and the Shore D hardness (ASTM D2240-95) is about 40 to about 90 (e.g., about 50 to about 80). Preferably, the top surface of the polishing pad has a surface roughness of about 1 to about 3 micron Ra.
- The polishing pad is particularly suited for use in conjunction with a chemical-mechanical polishing (“CMP”) apparatus. Typically, the apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad of the invention in contact with the platen and moving with the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving relative to the surface of the polishing pad intended to contact a substrate to be polished. The polishing of the substrate takes place by the substrate being placed in contact with the polishing pad and then the polishing pad moving relative to the substrate, typically with a polishing composition therebetween, so as to abrade at least a portion of the substrate to polish the substrate. The CMP apparatus can be any suitable CMP apparatus, many of which are known in the art. The polishing pad of the invention also can be used with linear polishing tools.
- The polishing pad can be used alone or optionally can be mated to a polishing subpad. The subpad can be any suitable subpad. Suitable subpads include polyurethane foam subpads (e.g., Poron® foam subpads commercially available from Rogers Corporation), impregnated felt subpads, microporous polyurethane subpads, or sintered urethane subpads. The subpad typically is softer than the polishing pad of the invention and therefore is more compressible and has a lower Shore hardness value than the polishing pad of the invention. For example, the subpad can have a Shore A hardness of about 35 to about 50. In some embodiments, the subpad is harder, is less compressible, and has a higher Shore hardness than the polishing pad. The subpad optionally comprises grooves, channels, hollow sections, windows, apertures, and the like. The subpad can be affixed to the polishing layer by any suitable means. For example, the polishing layer and subpad can be affixed through adhesives or can be attached via welding or similar technique. Typically, an intermediate backing layer such as a polyethyleneterephthalate film is disposed between the polishing pad and the subpad.
- The polishing pad of the invention is suitable for use in a method of polishing many types of substrates (e.g., wafers) and substrate materials. The method comprises (i) providing a substrate to be polished, (ii) contacting the substrate with a polishing system comprising a polishing pad of the invention and a polishing composition, and (iii) abrading at least a portion of the substrate with the polishing system to polish the substrate. Suitable substrates include memory storage devices, glass substrates, memory or rigid disks, metals (e.g., noble metals), magnetic heads, inter-layer dielectric (ILD) layers, polymeric films, low and high dielectric constant films, ferroelectrics, micro-electro-mechanical systems (MEMS), semiconductor wafers, field emission displays, and other microelectronic substrates, especially microelectronic substrates comprising insulating layers (e.g., metal oxide, silicon nitride, or low dielectric materials) and/or metal-containing layers (e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium, iridium, alloys thereof, and mixtures thereof). The term “memory or rigid disk” refers to any magnetic disk, hard disk, rigid disk, or memory disk for retaining information in electromagnetic form. Memory or rigid disks typically have a surface that comprises nickel-phosphorus, but the surface can comprise any other suitable material. Suitable metal oxide insulating layers include, for example, alumina, silica, titania, ceria, zirconia, germania, magnesia, and combinations thereof. In addition, the substrate can comprise, consist essentially of, or consist of any suitable metal composite. Suitable metal composites include, for example, metal nitrides (e.g., tantalum nitride, titanium nitride, and tungsten nitride), metal carbides (e.g., silicon carbide and tungsten carbide), nickel-phosphorus, alumino-borosilicate, borosilicate glass, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), silicon/germanium alloys, and silicon/germanium/carbon alloys. The substrate also can comprise, consist essentially of, or consist of any suitable semiconductor base material. Suitable semiconductor base materials include single-crystal silicon, poly-crystalline silicon, amorphous silicon, silicon-on-insulator, and gallium arsenide.
- The polishing composition comprises a liquid carrier (e.g., water) and optionally one or more additives selected from the group consisting of abrasives (e.g., alumina, silica, titania, ceria, zirconia, germania, magnesia, and combinations thereof), oxidizers (e.g., hydrogen peroxide and ammonium persulfate), corrosion inhibitors (e.g., benzotriazole), film-forming agents (e.g., polyacrylic acid and polystyrenesulfonic acid), complexing agents (e.g., mono-, di-, and poly-carboxylic acids, phosphonic acids, and sulfonic acids), pH adjustors (e.g., hydrochloric acid, sulfuric acid, phosphoric acid, sodium hydroxide, potassium hydroxide, and ammonium hydroxide), buffering agents (e.g., phosphate buffers, acetate buffers, and sulfate buffers), surfactants (e.g., nonionic surfactants), salts thereof, and combinations thereof. The selection of the components of the polishing composition depends in part on the type of substrate being polished.
- This example further illustrates the invention but, of course, should not be construed as in any way limiting its scope. In particular, this example illustrates a method of producing a polishing pad of the invention containing oriented pores.
- Thermoplastic polyurethane was prepared by a batch process involving reaction of methyldiphenyldiisocyanate with a polyol and 1,4-butanediol. During the polymer synthesis, air (35% by volume) was introduced into the polymer reaction mixture. As the viscosity of the polymer reaction mixture increased due to formation of the polymer, the air (25% by volume) became trapped in the polymer cake. The polymer cake was cut into small pieces and was converted into granules (or flakes) using a hammer. The physical properties of the thermoplastic polyurethane granules are given in Table 1, where DMA, DSC, and GPC refer to Dynamic Mechanical Analysis, Differential Scanning Calorimetry, and Gel Permeation Chromatography, respectively.
TABLE 1 Shore D Hardness 75 D Density 0.86 g/cm3 Peak Tg (DMA) 56° C. Tm range (DSC) 120-180° C. Melt Flow Index at 210° C. 1.6 g/10 min Mw (GPC) 175,000 g/mol Mn (GPC) 65,000 g/mol Mw/Mn (PDI) 2.7 RPI @ shear rates 150 l/s, ref. temp. 205° C. 2.8 Flexural Modulus 1241 MPa Young's Modulus at 25° C. 814 MPa Ultimate Tensile Strength 53 MPa Ultimate Elongation 355% - The thermoplastic polyurethane granules were then placed into an extruder and extruded under the conditions described in Table 2.
TABLE 2 Zone 1 Temperature 175° C. Zone 2 Temperature 191° C. Zone 3 Temperature 196° C. Zone 4 Temperature 204° C. Zone 5 Temperature 191° C. Die 1 Temperature 193° C. Die 2 Temperature 194° C. Melt Temperature 213° C. Die Pressure 7.72 MPa Screw Speed 20 rpm - The physical properties of the resulting extruded polymer sheet are given in Table 3. An SEM image of the polymer sheet showing the oriented pores is shown in FIG. 1.
TABLE 3 Thickness ˜1320 μm Density 1.16 g/cm3 Shore A Hardness 95.6 Peak Stress 39 MPa Average Pore Size 55 μm × 25 μm % Compressibility at 0.031 MPa 2.9 ± 1.8% % Rebound at 0.031 MPa 44.4 ± 4% Flexural Modulus 1241 MPa Avg. Surface Roughness 1.8 ± 0.3 μm Ra Air Permeability none Tg (DMA) 55° C. Tm range (DSC) 120-180° C. Taber Wear 44 mg/1000 cycle Ultimate Tensile Strength 53 MPa Ultimate Elongation 355 ± 35% - This example demonstrates that polishing pads comprising substantially oriented elongated pores can be produced by extrusion of polymer granules comprising trapped gas bubbles under mild conditions.
- All references, including publications, patent applications, and patents, cited herein are hereby incorporated by reference to the same extent as if each reference were individually and specifically indicated to be incorporated by reference and were set forth in its entirety herein.
- The use of the terms “a” and “an” and “the” and similar referents in the context of describing the invention (especially in the context of the following claims) are to be construed to cover both the singular and the plural, unless otherwise indicated herein or clearly contradicted by context. The terms “comprising,” “having,” “including,” and “containing” are to be construed as open-ended terms (i.e., meaning “including, but not limited to,”) unless otherwise noted. Recitation of ranges of values herein are merely intended to serve as a shorthand method of referring individually to each separate value falling within the range, unless otherwise indicated herein, and each separate value is incorporated into the specification as if it were individually recited herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The use of any and all examples, or exemplary language (e.g., “such as”) provided herein, is intended merely to better illuminate the invention and does not pose a limitation on the scope of the invention unless otherwise claimed. No language in the specification should be construed as indicating any non-claimed element as essential to the practice of the invention.
- Preferred embodiments of this invention are described herein, including the best mode known to the inventors for carrying out the invention. Variations of those preferred embodiments may become apparent to those of ordinary skill in the art upon reading the foregoing description. The inventors expect skilled artisans to employ such variations as appropriate, and the inventors intend for the invention to be practiced otherwise than as specifically described herein. Accordingly, this invention includes all modifications and equivalents of the subject matter recited in the claims appended hereto as permitted by applicable law. Moreover, any combination of the above-described elements in all possible variations thereof is encompassed by the invention unless otherwise indicated herein or otherwise clearly contradicted by context.
Claims (18)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/463,730 US6998166B2 (en) | 2003-06-17 | 2003-06-17 | Polishing pad with oriented pore structure |
TW93115975A TWI275453B (en) | 2003-06-17 | 2004-06-03 | Polishing pad with oriented pore structure |
PCT/US2004/017600 WO2005000526A1 (en) | 2003-06-17 | 2004-06-03 | Polishing pad with oriented pore structure |
KR1020057024154A KR101109211B1 (en) | 2003-06-17 | 2004-06-03 | Polishing pad with oriented pore structure |
MYPI20042302A MY131030A (en) | 2003-06-17 | 2004-06-15 | Polishing pad with oriented pore structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/463,730 US6998166B2 (en) | 2003-06-17 | 2003-06-17 | Polishing pad with oriented pore structure |
Publications (2)
Publication Number | Publication Date |
---|---|
US20040258882A1 true US20040258882A1 (en) | 2004-12-23 |
US6998166B2 US6998166B2 (en) | 2006-02-14 |
Family
ID=33517136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/463,730 Expired - Lifetime US6998166B2 (en) | 2003-06-17 | 2003-06-17 | Polishing pad with oriented pore structure |
Country Status (5)
Country | Link |
---|---|
US (1) | US6998166B2 (en) |
KR (1) | KR101109211B1 (en) |
MY (1) | MY131030A (en) |
TW (1) | TWI275453B (en) |
WO (1) | WO2005000526A1 (en) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050118937A1 (en) * | 2003-10-14 | 2005-06-02 | Dai Fukushima | Polishing apparatus, polishing method, and semiconductor device fabrication method |
US20060154579A1 (en) * | 2005-01-12 | 2006-07-13 | Psiloquest | Thermoplastic chemical mechanical polishing pad and method of manufacture |
US20060286906A1 (en) * | 2005-06-21 | 2006-12-21 | Cabot Microelectronics Corporation | Polishing pad comprising magnetically sensitive particles and method for the use thereof |
WO2007001699A1 (en) * | 2005-06-22 | 2007-01-04 | Cabot Microelectronics Corporation | Tranparent microporous materials for cmp |
US20070161720A1 (en) * | 2005-11-30 | 2007-07-12 | Applied Materials, Inc. | Polishing Pad with Surface Roughness |
US20070178812A1 (en) * | 2004-02-23 | 2007-08-02 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and method for manufacture of semiconductor device using the same |
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US20100216378A1 (en) * | 2009-02-24 | 2010-08-26 | Jaekwang Choi | Chemical mechanical polishing apparatus |
US8380339B2 (en) | 2003-03-25 | 2013-02-19 | Nexplanar Corporation | Customized polish pads for chemical mechanical planarization |
US8715035B2 (en) | 2005-02-18 | 2014-05-06 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US20140311044A1 (en) * | 2011-04-25 | 2014-10-23 | Bando Chemical Industries, Ltd. | Polishing film |
US20150056895A1 (en) * | 2013-08-22 | 2015-02-26 | Cabot Microelectronics Corporation | Ultra high void volume polishing pad with closed pore structure |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
JP2018051698A (en) * | 2016-09-29 | 2018-04-05 | 富士紡ホールディングス株式会社 | Polishing pad and method for producing the same |
JP2018108612A (en) * | 2016-12-28 | 2018-07-12 | 花王株式会社 | Polishing pad |
CN114196327A (en) * | 2022-01-28 | 2022-03-18 | 淄博海泰新光光学技术有限公司 | Composite material for polishing optical parts and preparation method thereof |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7618529B2 (en) * | 2004-05-25 | 2009-11-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Polishing pad for electrochemical mechanical polishing |
US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7371160B1 (en) * | 2006-12-21 | 2008-05-13 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Elastomer-modified chemical mechanical polishing pad |
US8697239B2 (en) * | 2009-07-24 | 2014-04-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-functional polishing pad |
JP5484145B2 (en) * | 2010-03-24 | 2014-05-07 | 東洋ゴム工業株式会社 | Polishing pad |
RU2577572C2 (en) * | 2011-02-24 | 2016-03-20 | Зм Инновейтив Пропертиз Компани | Abrasive article with coating on foamed substrate and method of its fabrication |
DE102013224549A1 (en) * | 2013-11-29 | 2015-06-03 | Neenah Gessner Gmbh | Abrasive carrier, abrasive article comprising the abrasive carrier and its manufacturing process |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
CN113579992A (en) | 2014-10-17 | 2021-11-02 | 应用材料公司 | CMP pad construction with composite material properties using additive manufacturing process |
US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10618141B2 (en) | 2015-10-30 | 2020-04-14 | Applied Materials, Inc. | Apparatus for forming a polishing article that has a desired zeta potential |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
KR102629800B1 (en) | 2016-01-19 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Porous Chemical Mechanical Polishing Pads |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | Abrasive delivery polishing pads and manufacturing methods thereof |
WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
KR102345784B1 (en) * | 2019-07-10 | 2022-01-03 | 에프엔에스테크 주식회사 | High-hardness polishing pad for polishing the backside of wafer |
US11813712B2 (en) | 2019-12-20 | 2023-11-14 | Applied Materials, Inc. | Polishing pads having selectively arranged porosity |
US11806829B2 (en) | 2020-06-19 | 2023-11-07 | Applied Materials, Inc. | Advanced polishing pads and related polishing pad manufacturing methods |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4271640A (en) * | 1978-02-17 | 1981-06-09 | Minnesota Mining And Manufacturing Company | Rotatable floor treating pad |
US4728552A (en) * | 1984-07-06 | 1988-03-01 | Rodel, Inc. | Substrate containing fibers of predetermined orientation and process of making the same |
US4841680A (en) * | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
US4867881A (en) * | 1987-09-14 | 1989-09-19 | Minnesota Minning And Manufacturing Company | Orientied microporous film |
US5020283A (en) * | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5257478A (en) * | 1990-03-22 | 1993-11-02 | Rodel, Inc. | Apparatus for interlayer planarization of semiconductor material |
US5533923A (en) * | 1995-04-10 | 1996-07-09 | Applied Materials, Inc. | Chemical-mechanical polishing pad providing polishing unformity |
US5795218A (en) * | 1996-09-30 | 1998-08-18 | Micron Technology, Inc. | Polishing pad with elongated microcolumns |
US5900164A (en) * | 1992-08-19 | 1999-05-04 | Rodel, Inc. | Method for planarizing a semiconductor device surface with polymeric pad containing hollow polymeric microelements |
US6117000A (en) * | 1998-07-10 | 2000-09-12 | Cabot Corporation | Polishing pad for a semiconductor substrate |
US6290883B1 (en) * | 1999-08-31 | 2001-09-18 | Lucent Technologies Inc. | Method for making porous CMP article |
US6585574B1 (en) * | 1998-06-02 | 2003-07-01 | Brian Lombardo | Polishing pad with reduced moisture absorption |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1071570A (en) * | 1996-08-27 | 1998-03-17 | Fuji Photo Film Co Ltd | Polishing tool |
WO1998028108A1 (en) | 1996-12-20 | 1998-07-02 | Unique Technology International Private Limited | Manufacture of porous polishing pad |
KR100281976B1 (en) * | 1997-09-20 | 2001-02-15 | 김상화 | Polishing pads and manufacturing method thereof |
JP2001105299A (en) * | 1999-10-01 | 2001-04-17 | Asahi Kasei Corp | Abrasive pad with window |
KR100497205B1 (en) | 2001-08-02 | 2005-06-23 | 에스케이씨 주식회사 | Chemical mechanical polishing pad with micro-holes |
-
2003
- 2003-06-17 US US10/463,730 patent/US6998166B2/en not_active Expired - Lifetime
-
2004
- 2004-06-03 TW TW93115975A patent/TWI275453B/en not_active IP Right Cessation
- 2004-06-03 WO PCT/US2004/017600 patent/WO2005000526A1/en active Application Filing
- 2004-06-03 KR KR1020057024154A patent/KR101109211B1/en active IP Right Grant
- 2004-06-15 MY MYPI20042302A patent/MY131030A/en unknown
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4271640A (en) * | 1978-02-17 | 1981-06-09 | Minnesota Mining And Manufacturing Company | Rotatable floor treating pad |
US4728552A (en) * | 1984-07-06 | 1988-03-01 | Rodel, Inc. | Substrate containing fibers of predetermined orientation and process of making the same |
US4841680A (en) * | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
US4867881A (en) * | 1987-09-14 | 1989-09-19 | Minnesota Minning And Manufacturing Company | Orientied microporous film |
US5020283A (en) * | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5257478A (en) * | 1990-03-22 | 1993-11-02 | Rodel, Inc. | Apparatus for interlayer planarization of semiconductor material |
US5900164A (en) * | 1992-08-19 | 1999-05-04 | Rodel, Inc. | Method for planarizing a semiconductor device surface with polymeric pad containing hollow polymeric microelements |
US5533923A (en) * | 1995-04-10 | 1996-07-09 | Applied Materials, Inc. | Chemical-mechanical polishing pad providing polishing unformity |
US5795218A (en) * | 1996-09-30 | 1998-08-18 | Micron Technology, Inc. | Polishing pad with elongated microcolumns |
US6585574B1 (en) * | 1998-06-02 | 2003-07-01 | Brian Lombardo | Polishing pad with reduced moisture absorption |
US6117000A (en) * | 1998-07-10 | 2000-09-12 | Cabot Corporation | Polishing pad for a semiconductor substrate |
US6290883B1 (en) * | 1999-08-31 | 2001-09-18 | Lucent Technologies Inc. | Method for making porous CMP article |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7267607B2 (en) | 2002-10-28 | 2007-09-11 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8380339B2 (en) | 2003-03-25 | 2013-02-19 | Nexplanar Corporation | Customized polish pads for chemical mechanical planarization |
US20050118937A1 (en) * | 2003-10-14 | 2005-06-02 | Dai Fukushima | Polishing apparatus, polishing method, and semiconductor device fabrication method |
US20070178812A1 (en) * | 2004-02-23 | 2007-08-02 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and method for manufacture of semiconductor device using the same |
US7470170B2 (en) * | 2004-02-23 | 2008-12-30 | Toyo Tire & Rubber Co., Ltd. | Polishing pad and method for manufacture of semiconductor device using the same |
WO2006076060A1 (en) * | 2005-01-12 | 2006-07-20 | Psiloquest | A thermoplastic chemical mechanical polishing pad and method of manufacture |
US20060154579A1 (en) * | 2005-01-12 | 2006-07-13 | Psiloquest | Thermoplastic chemical mechanical polishing pad and method of manufacture |
US8715035B2 (en) | 2005-02-18 | 2014-05-06 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US20060286906A1 (en) * | 2005-06-21 | 2006-12-21 | Cabot Microelectronics Corporation | Polishing pad comprising magnetically sensitive particles and method for the use thereof |
WO2007001699A1 (en) * | 2005-06-22 | 2007-01-04 | Cabot Microelectronics Corporation | Tranparent microporous materials for cmp |
US20070161720A1 (en) * | 2005-11-30 | 2007-07-12 | Applied Materials, Inc. | Polishing Pad with Surface Roughness |
US20100216378A1 (en) * | 2009-02-24 | 2010-08-26 | Jaekwang Choi | Chemical mechanical polishing apparatus |
US20140311044A1 (en) * | 2011-04-25 | 2014-10-23 | Bando Chemical Industries, Ltd. | Polishing film |
US20150056895A1 (en) * | 2013-08-22 | 2015-02-26 | Cabot Microelectronics Corporation | Ultra high void volume polishing pad with closed pore structure |
JP2018051698A (en) * | 2016-09-29 | 2018-04-05 | 富士紡ホールディングス株式会社 | Polishing pad and method for producing the same |
JP2018108612A (en) * | 2016-12-28 | 2018-07-12 | 花王株式会社 | Polishing pad |
CN114196327A (en) * | 2022-01-28 | 2022-03-18 | 淄博海泰新光光学技术有限公司 | Composite material for polishing optical parts and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI275453B (en) | 2007-03-11 |
KR101109211B1 (en) | 2012-01-30 |
TW200510123A (en) | 2005-03-16 |
US6998166B2 (en) | 2006-02-14 |
WO2005000526A1 (en) | 2005-01-06 |
KR20060023563A (en) | 2006-03-14 |
MY131030A (en) | 2007-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6998166B2 (en) | Polishing pad with oriented pore structure | |
US6913517B2 (en) | Microporous polishing pads | |
KR101281874B1 (en) | Surface textured microporous polishing pads | |
US7267607B2 (en) | Transparent microporous materials for CMP | |
US8075372B2 (en) | Polishing pad with microporous regions | |
US7311862B2 (en) | Method for manufacturing microporous CMP materials having controlled pore size | |
US20040082276A1 (en) | Transparent microporous materials for CMP | |
US20050153634A1 (en) | Negative poisson's ratio material-containing CMP polishing pad | |
US20040171339A1 (en) | Microporous polishing pads |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: CABOT MICROELECTRONICS CORPORATION, ILLINOIS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PRASAD, ABANESHWAR;REEL/FRAME:013789/0563 Effective date: 20030417 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT, IL Free format text: NOTICE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:CABOT MICROELECTRONICS CORPORATION;REEL/FRAME:027727/0275 Effective date: 20120213 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: CABOT MICROELECTRONICS CORPORATION, ILLINOIS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA, N.A.;REEL/FRAME:047587/0119 Effective date: 20181115 Owner name: JPMORGAN CHASE BANK, N.A., ILLINOIS Free format text: SECURITY AGREEMENT;ASSIGNORS:CABOT MICROELECTRONICS CORPORATION;QED TECHNOLOGIES INTERNATIONAL, INC.;FLOWCHEM LLC;AND OTHERS;REEL/FRAME:047588/0263 Effective date: 20181115 |
|
AS | Assignment |
Owner name: CMC MATERIALS, INC., ILLINOIS Free format text: CHANGE OF NAME;ASSIGNOR:CABOT MICROELECTRONICS CORPORATION;REEL/FRAME:054980/0681 Effective date: 20201001 |
|
AS | Assignment |
Owner name: CMC MATERIALS, INC., ILLINOIS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: INTERNATIONAL TEST SOLUTIONS, LLC, ILLINOIS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: SEALWELD (USA), INC., TEXAS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: MPOWER SPECIALTY CHEMICALS LLC, TEXAS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: KMG-BERNUTH, INC., TEXAS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: KMG ELECTRONIC CHEMICALS, INC., TEXAS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: FLOWCHEM LLC, TEXAS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: QED TECHNOLOGIES INTERNATIONAL, INC., NEW YORK Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 Owner name: CABOT MICROELECTRONICS CORPORATION, ILLINOIS Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:060592/0260 Effective date: 20220706 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT, MARYLAND Free format text: SECURITY INTEREST;ASSIGNORS:CMC MATERIALS, INC.;INTERNATIONAL TEST SOLUTIONS, LLC;QED TECHNOLOGIES INTERNATIONAL, INC.;REEL/FRAME:060615/0001 Effective date: 20220706 Owner name: TRUIST BANK, AS NOTES COLLATERAL AGENT, NORTH CAROLINA Free format text: SECURITY INTEREST;ASSIGNORS:ENTEGRIS, INC.;ENTEGRIS GP, INC.;POCO GRAPHITE, INC.;AND OTHERS;REEL/FRAME:060613/0072 Effective date: 20220706 |