US20050025909A1 - Method for the production of III-V laser components - Google Patents

Method for the production of III-V laser components Download PDF

Info

Publication number
US20050025909A1
US20050025909A1 US10/872,902 US87290204A US2005025909A1 US 20050025909 A1 US20050025909 A1 US 20050025909A1 US 87290204 A US87290204 A US 87290204A US 2005025909 A1 US2005025909 A1 US 2005025909A1
Authority
US
United States
Prior art keywords
iii
substrate
layer
deposited
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/872,902
Inventor
Holger Jurgensen
Alois Krost
Armin Dadgar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10206750A external-priority patent/DE10206750A1/en
Application filed by Aixtron SE filed Critical Aixtron SE
Assigned to AIXTRON AG reassignment AIXTRON AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DADGAR, ARMIN, KROST, ALOIS, JURGENSEN, HOLGER
Publication of US20050025909A1 publication Critical patent/US20050025909A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates

Definitions

  • the invention relates to a method for producing III-V laser components, in which a III-V semiconductor layer, for example gallium nitride, is deposited on a silicon substrate from gaseous starting substances, for example trimethylgallium, trimethylindium, trimethylaluminum, phosphine or arsine, in a process chamber of a reactor.
  • a III-V semiconductor layer for example gallium nitride
  • gaseous starting substances for example trimethylgallium, trimethylindium, trimethylaluminum, phosphine or arsine
  • III nitride semiconductors on substrates of a different type such as for example sapphire, silicon carbite or silicon
  • this substrate material is less expensive than III-V substrate material.
  • one problem of this process is the lattice mismatch of the layer on the substrate. Suitable selection of the substrate material for the layer material allows matching to be effected, for example gallium nitride grows at a position rotated through 30° with respect to the sapphire, and thereby eliminates part of the lattice mismatch.
  • gallium nitride grows at a position rotated through 30° with respect to the sapphire, and thereby eliminates part of the lattice mismatch.
  • this rotated growth there is no common fracture or cleavage direction for the layer and the substrate.
  • the fracture line generally runs along the fracture line or cleavage line of the substrate, since the latter is considerably thicker than the layer deposited thereon. In the case described above, this leads to a rough laser facet which has to be reworked. Also, with laser mirrors produced in this manner, undesirable losses are produced in the event of, for example, a wet-chemical after treatment. The roughness of the laser mirrors or facets which are not precisely oriented lead to losses and thereby cause a high threshold current, which is associated with an increased thermal load in the subsequent component.
  • the invention is based on the object of providing an inexpensive method for producing high-quality lasers.
  • an aluminum-containing buffer layer is deposited on an Si substrate, in particular an Si( 111 ) substrate. This is carried out by means of MOCVD.
  • This buffer layer may consist of aluminum nitride and may be 20 to 100 nm thick.
  • the active III-V layer preferably a III nitride layer, and particularly preferably a gallium nitride layer, or a sequence of such layers for component layers, is deposited on this buffer layer, in such a manner that the lattice plane of the layer runs parallel to the cleavage direction of the substrate.
  • the fracture When the substrate is fractured, the fracture then takes place along a crystalographically suitable surface.
  • the fracture takes place substantially along one plane.
  • the fracture or cleavage lines of the Si( 111 ) substrate can then be selected in such a way that plane-parallel layer fracture surfaces are formed. These layer fracture surfaces then form the laser facets.
  • the laser facets are therefore formed simply by breaking or cleaving. This is possible on account of the fact that the crystalographic fracture direction of the silicon substrate and of the structure based on gallium nitride coincide.
  • a pertinent factor in this context is the aluminum-containing seed layer.
  • a seed layer of this type even allows gallium nitride which is matched in terms of fraction direction to be deposited on Si( 001 ). The only problem in this case is the absence of common crystal symmetry.
  • layers can be deposited on the layer sequence described above.
  • the pertinent factor is that the hexagonal crystal of gallium nitride is deposited on the cubic crystal lattice of the silicon with a corresponding crystal orientation, in such a manner that the natural fracture directions of the two crystals coincide in the plane in such a manner that plane-parallel laser facets are formed by simply fracturing the substrate along the natural fracture lines.

Abstract

The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.

Description

  • This application is a continuation of pending International Patent Application No. PCT/EP02/12799 filed Nov. 15, 2002 which designates the United States and claims priority of pending German Patent Application Nos. 101 63 714.4 filed Dec. 21, 2001 and 102 06 750.3 filed Feb. 19, 2002.
  • The invention relates to a method for producing III-V laser components, in which a III-V semiconductor layer, for example gallium nitride, is deposited on a silicon substrate from gaseous starting substances, for example trimethylgallium, trimethylindium, trimethylaluminum, phosphine or arsine, in a process chamber of a reactor.
  • The deposition of III nitride semiconductors on substrates of a different type, such as for example sapphire, silicon carbite or silicon, is a cost-saving process, since this substrate material is less expensive than III-V substrate material. However, one problem of this process is the lattice mismatch of the layer on the substrate. Suitable selection of the substrate material for the layer material allows matching to be effected, for example gallium nitride grows at a position rotated through 30° with respect to the sapphire, and thereby eliminates part of the lattice mismatch. However, on account of this rotated growth there is no common fracture or cleavage direction for the layer and the substrate. The fracture line generally runs along the fracture line or cleavage line of the substrate, since the latter is considerably thicker than the layer deposited thereon. In the case described above, this leads to a rough laser facet which has to be reworked. Also, with laser mirrors produced in this manner, undesirable losses are produced in the event of, for example, a wet-chemical after treatment. The roughness of the laser mirrors or facets which are not precisely oriented lead to losses and thereby cause a high threshold current, which is associated with an increased thermal load in the subsequent component.
  • The invention is based on the object of providing an inexpensive method for producing high-quality lasers.
  • The object is achieved by the invention defined in the claims, in which it is substantially provided that first of all an aluminum-containing buffer layer is deposited on an Si substrate, in particular an Si(111) substrate. This is carried out by means of MOCVD. This buffer layer may consist of aluminum nitride and may be 20 to 100 nm thick. Then, in the same reactor and preferably without any further intermediate steps, the active III-V layer, preferably a III nitride layer, and particularly preferably a gallium nitride layer, or a sequence of such layers for component layers, is deposited on this buffer layer, in such a manner that the lattice plane of the layer runs parallel to the cleavage direction of the substrate. When the substrate is fractured, the fracture then takes place along a crystalographically suitable surface. The fracture takes place substantially along one plane. The fracture or cleavage lines of the Si(111) substrate can then be selected in such a way that plane-parallel layer fracture surfaces are formed. These layer fracture surfaces then form the laser facets. The laser facets are therefore formed simply by breaking or cleaving. This is possible on account of the fact that the crystalographic fracture direction of the silicon substrate and of the structure based on gallium nitride coincide.
  • A pertinent factor in this context is the aluminum-containing seed layer. A seed layer of this type even allows gallium nitride which is matched in terms of fraction direction to be deposited on Si(001). The only problem in this case is the absence of common crystal symmetry.
  • If necessary, further, in particular electrically active, layers can be deposited on the layer sequence described above. The pertinent factor, however, is that the hexagonal crystal of gallium nitride is deposited on the cubic crystal lattice of the silicon with a corresponding crystal orientation, in such a manner that the natural fracture directions of the two crystals coincide in the plane in such a manner that plane-parallel laser facets are formed by simply fracturing the substrate along the natural fracture lines.
  • All features disclosed are (inherently) pertinent to the invention. The disclosure content of the associated/appended priority documents (copy of the prior application) is hereby incorporated in its entirety in the disclosure of the application, partly with a view to incorporating features of these documents in claims of the present application.

Claims (3)

1. Method for producing III-V laser components, in which a III-V semiconductor layer is deposited on a silicon substrate, in particular an Si(111) substrate, from gaseous starting substances in a process chamber of a reactor, wherein first of all an Al-containing buffer layer is deposited on the Si substrate, then the III-V semiconductor layer, in particular a GAN layer, and if appropriate further active layers, are deposited on the buffer layer, in such a manner that the lattice plane thereof runs parallel to the cleavage direction of the substrate, plane-parallel layer fracture surfaces then being produced by cleaving the substrate in the cleavage direction, and components in which the layer fracture surfaces form the laser facets subsequently being fabricated.
2. Method according to claim 1, characterized in that the buffer layer consists of AIN or AIN with the addition of one or more further elements from group III or V.
3. Method according to claim 1, characterized in that the buffer layer is a III-V semiconductor layer and is between 20 and 100 nm thick.
US10/872,902 2001-12-21 2004-06-21 Method for the production of III-V laser components Abandoned US20050025909A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10163714 2001-12-21
DE10163714.4 2001-12-21
DE10206750.3 2002-02-19
DE10206750A DE10206750A1 (en) 2001-12-21 2002-02-19 Process for the manufacture of III-V laser components
PCT/EP2002/012799 WO2003054921A2 (en) 2001-12-21 2002-11-15 Method for the production of iii-v laser components

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/012799 Continuation WO2003054921A2 (en) 2001-12-21 2002-11-15 Method for the production of iii-v laser components

Publications (1)

Publication Number Publication Date
US20050025909A1 true US20050025909A1 (en) 2005-02-03

Family

ID=26010857

Family Applications (1)

Application Number Title Priority Date Filing Date
US10/872,902 Abandoned US20050025909A1 (en) 2001-12-21 2004-06-21 Method for the production of III-V laser components

Country Status (5)

Country Link
US (1) US20050025909A1 (en)
EP (1) EP1459365A2 (en)
JP (1) JP2005513797A (en)
AU (1) AU2002356608A1 (en)
WO (1) WO2003054921A2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080220555A1 (en) * 2007-03-09 2008-09-11 Adam William Saxler Nitride semiconductor structures with interlayer structures and methods of fabricating nitride semiconductor structures with interlayer structures
US20080217645A1 (en) * 2007-03-09 2008-09-11 Adam William Saxler Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
US8759169B2 (en) 2009-10-31 2014-06-24 X—FAB Semiconductor Foundries AG Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components
US9344200B2 (en) 2014-10-08 2016-05-17 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth
US9395489B2 (en) 2014-10-08 2016-07-19 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material
US9595805B2 (en) 2014-09-22 2017-03-14 International Business Machines Corporation III-V photonic integrated circuits on silicon substrate

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11308477B2 (en) 2005-04-26 2022-04-19 Spriv Llc Method of reducing fraud in on-line transactions
US11818287B2 (en) 2017-10-19 2023-11-14 Spriv Llc Method and system for monitoring and validating electronic transactions
US11354667B2 (en) 2007-05-29 2022-06-07 Spriv Llc Method for internet user authentication
US11792314B2 (en) 2010-03-28 2023-10-17 Spriv Llc Methods for acquiring an internet user's consent to be located and for authenticating the location information

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654583A (en) * 1994-06-24 1997-08-05 Hitachi, Ltd. Semiconductor device having first and second semiconductor structures directly bonded to each other
US6080599A (en) * 1995-03-30 2000-06-27 Kabushiki Kaisha Toshiba Semiconductor optoelectric device and method of manufacturing the same
US6121121A (en) * 1997-11-07 2000-09-19 Toyoda Gosei Co., Ltd Method for manufacturing gallium nitride compound semiconductor
US20020197841A1 (en) * 2001-06-05 2002-12-26 Seiji Nagai Group III nitride compound semiconductor element and method for producing the same
US20030136333A1 (en) * 2000-06-09 2003-07-24 Fabrice Semond Preparation method of a coating of gallium nitride
US6703253B2 (en) * 2001-11-15 2004-03-09 Sharp Kabushiki Kaisha Method for producing semiconductor light emitting device and semiconductor light emitting device produced by such method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2430401A (en) * 1999-12-13 2001-06-18 North Carolina State University Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654583A (en) * 1994-06-24 1997-08-05 Hitachi, Ltd. Semiconductor device having first and second semiconductor structures directly bonded to each other
US6080599A (en) * 1995-03-30 2000-06-27 Kabushiki Kaisha Toshiba Semiconductor optoelectric device and method of manufacturing the same
US6121121A (en) * 1997-11-07 2000-09-19 Toyoda Gosei Co., Ltd Method for manufacturing gallium nitride compound semiconductor
US20030136333A1 (en) * 2000-06-09 2003-07-24 Fabrice Semond Preparation method of a coating of gallium nitride
US20020197841A1 (en) * 2001-06-05 2002-12-26 Seiji Nagai Group III nitride compound semiconductor element and method for producing the same
US6703253B2 (en) * 2001-11-15 2004-03-09 Sharp Kabushiki Kaisha Method for producing semiconductor light emitting device and semiconductor light emitting device produced by such method

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9054017B2 (en) 2007-03-09 2015-06-09 Cree, Inc. Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
US20080220555A1 (en) * 2007-03-09 2008-09-11 Adam William Saxler Nitride semiconductor structures with interlayer structures and methods of fabricating nitride semiconductor structures with interlayer structures
US7825432B2 (en) 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8324005B2 (en) 2007-03-09 2012-12-04 Cree, Inc. Methods of fabricating nitride semiconductor structures with interlayer structures
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US20080217645A1 (en) * 2007-03-09 2008-09-11 Adam William Saxler Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
US8759169B2 (en) 2009-10-31 2014-06-24 X—FAB Semiconductor Foundries AG Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components
US9595805B2 (en) 2014-09-22 2017-03-14 International Business Machines Corporation III-V photonic integrated circuits on silicon substrate
US10439356B2 (en) 2014-09-22 2019-10-08 International Business Machines Corporation III-V photonic integrated circuits on silicon substrate
US10756506B2 (en) 2014-09-22 2020-08-25 International Business Machines Corporation III-V photonic integrated circuits on silicon substrate
US9395489B2 (en) 2014-10-08 2016-07-19 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material
US9590393B2 (en) 2014-10-08 2017-03-07 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth
US9344200B2 (en) 2014-10-08 2016-05-17 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth
US9726819B2 (en) 2014-10-08 2017-08-08 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth
US9864135B2 (en) 2014-10-08 2018-01-09 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material

Also Published As

Publication number Publication date
WO2003054921B1 (en) 2004-03-04
WO2003054921A3 (en) 2003-12-24
EP1459365A2 (en) 2004-09-22
WO2003054921A2 (en) 2003-07-03
AU2002356608A1 (en) 2003-07-09
AU2002356608A8 (en) 2003-07-09
JP2005513797A (en) 2005-05-12

Similar Documents

Publication Publication Date Title
JP3771952B2 (en) Method for growing single crystal III-V compound semiconductor layer, method for manufacturing light emitting element, and method for manufacturing transistor
JP5896442B2 (en) Group III nitride film growth method
US6824610B2 (en) Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate
EP1869707B1 (en) Technique for the growth of planar semi-polar gallium nitride
JP3139445B2 (en) GaN-based semiconductor growth method and GaN-based semiconductor film
US6420283B1 (en) methods for producing compound semiconductor substrates and light emitting elements
US6967355B2 (en) Group III-nitride on Si using epitaxial BP buffer layer
GB2485418A (en) GaN on Si device substrate with GaN layer including sub-10nm SiNx interlayers that promote crystal growth with reduced threading dislocations
US7951694B2 (en) Semiconductor structure and method of manufacture of same
US20050025909A1 (en) Method for the production of III-V laser components
JP2002252177A (en) Semiconductor element
CN100547734C (en) Multilayered semiconductor substrate, semiconductor free-standing substrate and preparation method thereof and semiconductor device
JPH11135889A (en) Substrate for crystal growth and light-emitting device using the same
JP2927768B1 (en) Semiconductor device and manufacturing method thereof
JP2001148348A (en) Gab SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD
JP2003209062A (en) Crystal growth method of compound semiconductor layer and semiconductor element
JP2001345282A (en) Method of manufacturing nitride-based iii group compound semiconductor and nitride-based iii group compound semiconductor element
KR20040068266A (en) Method for producing iii-v laser components
US20140183579A1 (en) Miscut semipolar optoelectronic device
US20030224548A1 (en) Method of forming group-III nitride semiconductor layer on a light-emitting device
JP2000269605A (en) Laminate comprising gallium nitride crystal and manufacture thereof
JPH09275243A (en) Crystal growing method of nitride semiconductor and forming method of laser device resonant plane
JPH10107317A (en) Gan element substrate, its manufacturing method and gan element
DE102011011043B4 (en) Semiconductor layer system with a semipolar or m-planar group III nitride layer system and a semiconductor component based thereon
JP2001135580A (en) Method for growing gallium nitride based compound semiconductor

Legal Events

Date Code Title Description
AS Assignment

Owner name: AIXTRON AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:JURGENSEN, HOLGER;KROST, ALOIS;DADGAR, ARMIN;REEL/FRAME:015871/0860;SIGNING DATES FROM 20040628 TO 20040710

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION