US20050053369A1 - Focused photon energy heating chamber - Google Patents
Focused photon energy heating chamber Download PDFInfo
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- US20050053369A1 US20050053369A1 US10/658,227 US65822703A US2005053369A1 US 20050053369 A1 US20050053369 A1 US 20050053369A1 US 65822703 A US65822703 A US 65822703A US 2005053369 A1 US2005053369 A1 US 2005053369A1
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 148
- 238000012545 processing Methods 0.000 claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 abstract description 56
- 230000007246 mechanism Effects 0.000 description 7
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- 239000012636 effector Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
An apparatus and method for heating substrates, such as semiconductor wafers. A radiation energy source is arranged proximate to a reflector to direct radiation towards a window providing optical access to a processing chamber. A lens positioned outside of the window focuses the radiation emitted from the radiation energy source and reflector and directs it through the window. The focused radiation energy can be used to directly or indirectly heat a semiconductor wafer disposed in the processing chamber.
Description
- 1. Field of the Invention
- This invention generally relates to semiconductor manufacturing equipment and, more particularly, to an apparatus and method used for the processing of semiconductor wafers.
- 2. Description of the Related Art
- In the semiconductor industry, advancements in the development of semiconductor devices of decreased dimensions require the development of new processing and manufacturing techniques. One such processing technique is known as Rapid Thermal Processing (RTP). The RTP technique reduces the amount of time that a semiconductor device is exposed to high temperatures during processing. The RTP technique, typically includes irradiating the semiconductor device or wafer with sufficient power to rapidly raise the temperature of the wafer and maintaining the temperature for a time period long enough to successfully perform a fabrication process, but which avoids such problems as unwanted dopant diffusion that would otherwise occur during longer exposure to high processing temperatures.
- Generally, conventional RTP systems use a radiation source and reflectors to heat the bulk of the semiconductor wafer. The radiation source is usually a bank of lamps that emit radiation energy that is focused on the wafer by the reflectors.
- Conventional lamp-based RTP systems have considerable drawbacks with regard to achieving and maintaining a uniform temperature distribution across the active layer of the wafer surface. By applying more power to the filament, the power intensity of the lamp may be increased. However, the power density of direct radiation is limited by the rating of lamps and further by packing density of the lamps.
- Temperature fluctuations occur on the surface of the wafer which may cause crystal defects and slip dislocations in the wafer at high temperatures (e.g. ˜1000° C.). Further, the heating ramp rate and maximum temperature achievable are limited by the power density of the lamps.
- For the above reasons, what is needed is an apparatus and method for uniformly and controllably heating the surface of a semiconductor wafer during rapid thermal processing.
- The present invention includes an apparatus and method for heating substrates, such as semiconductor wafers. In the present invention, a radiation energy source is arranged proximate to a reflector to direct radiation towards a window providing optical access to a processing chamber. A lens positioned outside of the window can efficiently focus the radiation emitted from the radiation energy source and reflector and direct it through the window. The focused radiation energy can be used to directly or indirectly heat a semiconductor wafer disposed in the processing chamber. The use of the lens to focus the intensity of the radiation significantly improves the thermal uniformity and ramp rate of the design.
- The radiation from the radiation energy source can be focused and directed by the lens through the window towards a heat absorbing member on which the wafer is placed. By heating the heat absorbing member, the wafer can be subjected to more uniform heating and thus, the apparatus can provide reproducible results. The intense heating of the heat absorbing member also allows for a high heating ramp rate.
- Since the radiation from the radiation energy source is focused and directed the power density the radiation provides can be tailored without regard for the rating of the radiation energy source. For example, if the radiation energy source is a bank of lamps, the rating of the lamps would not be a substantial factor. Further, the radiation energy source is not limited by packing density. For example, if the radiation energy source is a bank of lamps, the size of the bank would not matter since the radiation is collected from all of the lamps and focused.
- In one aspect of the invention, an apparatus is provided for heating a semiconductor substrate. The apparatus includes a chamber having a window providing optical access to the interior of said chamber. A radiation energy focusing assembly positioned in an optical path with the window is provided to focus radiation energy emitted from a radiation energy source into the window. The focused radiation energy can be used to heat a semiconductor substrate disposed in the chamber.
- In another aspect of the present invention, a method is provided for processing a semiconductor substrate including providing a chamber having a window which allows for optical access along an optical path to an interior of the chamber. The method also includes generating radiation energy from a radiation source; concentrating the radiation energy; and causing the concentrated radiation energy to enter the chamber through the window to change the temperature of a semiconductor substrate disposed in the interior of the chamber.
- These and other features and advantages of the present invention will be more readily apparent from the detailed description of the embodiments set forth below taken in conjunction with the accompanying drawings.
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FIG. 1 is a simplified cross-sectional view of one embodiment of the present invention; -
FIG. 2 is a flow diagram illustrating an operational method for using the apparatus ofFIG. 1 in accordance with the present invention; -
FIG. 3 is an embodiment of a lens including a cooling means in accordance with the present invention; -
FIG. 4 is a simplified illustration of a mechanism for cooling the radiation focusing lens in accordance with an embodiment of the present invention; and -
FIG. 5 is a simplified illustration of yet another embodiment of the present invention. -
FIG. 1 is a simplified representation of the wafer heating apparatus of the present invention.Heating apparatus 100 includes aprocessing chamber 102 defining aprocessing area 104. Optionally, disposed withinprocessing area 104 is aheat absorbing member 106 used to support asingle wafer 108 during processing. Awindow 110 is formed or mounted ontoprocessing chamber 102 to provide optical access along anoptical path 101 toprocessing area 104. External toprocessing chamber 102 and positioned substantially alongoptical path 101 are aradiation focusing assembly 112, aradiation source 114, and a strategically positionedradiation reflecting device 118. - It should be understood that
optical path 101 is represented by a line segment merely to provide an illustrative representation of the line-of-sight access throughwindow 110 intoprocess chamber 102 upon which some of the components ofheating apparatus 100 are generally aligned.Optical path 101 is shown perpendicular towindow 110 only by example and should not be considered as limiting in any manner. - In accordance with the present invention,
processing chamber 102 can be an RTP chamber, such as those used in thermal anneals. In other embodiments,processing chamber 102 may be used for dopant diffusion, thermal oxidation, nitridation, chemical vapor deposition, and similar processes. -
Processing chamber 102 includes an opening (not shown) on one end ofprocessing chamber 102, which provides access for the loading and unloading ofwafer 108 before and after processing. The opening may be a relatively small opening, but large enough to accommodate a wafer of between about 0.5 mm to 2 mm thick and up to 300 mm (˜12 in.) in diameter, and a loading device, such as the arm and end effector of a robot.Processing chamber 102 may be constructed with a minimal internal volume-surroundingwafer 108. As a result,heating apparatus 100 may be made smaller, requiring less floor space. Preferably,processing chamber 102 is made of a transparent quartz or similar material. - Wafer 108 is positioned within
processing chamber 102 supported on awafer support device 106, which supports thesingle wafer 108 withinprocessing area 104. In one embodiment,wafer support device 106 allows a substantial amount of the surface ofwafer 108 to be exposed alongoptical path 101 towindow 110 or, if provided, to heat absorbingmember 106 a. - In one embodiment,
heat absorbing member 106 a supports wafer 108 spaced therefrom on standoffs (not shown) or in contact therewith. The standoffs may be any high temperature resistant material, such as quartz, which may have a height of between about 50 μm and about 20 mm. Standoffs contact wafer 108 with a minimal amount of surface area thus leaving a substantial amount of the wafer surface area exposed toheat absorbing member 106 a. In most embodiments, processingchamber 102 requires no internal moving parts to positionwafer 108, such as lift-pins, actuators, and the like. Alternatively, in some embodiments, processingchamber 102 may use moveable standoffs or lift-pins to positionwafer 108 onheat absorbing member 106 a. -
Heat absorbing member 106 a can be made of a heat absorbing material, such as graphite, SiC, or a similar material.Heat absorbing member 106 a and may have a variable thickness, ranging from between about 0.5 mm and about 20 mm. - In one embodiment, as shown in
FIG. 1 ,heat absorbing member 106 a can be positioned operationally alongoptical path 101, in-line withwindow 110. In one embodiment,window 110 may be fused silica, quartz, sapphire, or other material, which is sufficiently transparent in the visible and near IR portion of the electromagnetic spectrum.Window 110 may have a thickness of between about 1 mm and about 5 mm and a diameter that is at least as great as or greater than the diameter ofwafer 108 orheat absorbing member 106 a. -
FIG. 1 also illustrates radiation focusing assembly 111 positioned external toprocessing chamber 102 and disposed alongoptical path 101 betweenradiation energy source 114 andwindow 110. In one embodiment, radiation focusing assembly 111 includes a singleradiation focusing lens 112 or, alternatively, a radiation focusing lens group 112 (i.e. a plurality oflenses 112 used in conjunction with one another). Focusinglens 112 may include any conventional type of lenses, the use and function of which are well known in the art. For example, in one embodiment,lens 112 may be a Fresnel lens, which is a thin optical lens consisting of concentric rings of segmental lenses and having a short focal length. In other embodiments,lens 112 is a convex or concave lens (or a combination thereof). Radiation focusing assembly 111 may optionally include afocus mechanism 115 and aradiation collector 116. -
Focus mechanism 115 can be coupled to radiation focusing assembly 111 to moveradiation focusing lens 112 alongoptical path 101 so that radiation energy fromradiation energy source 114 transmitted alongoptical path 101 intowindow 110 can vary in magnification within a focus range. -
Focus mechanism 115 is coupled to a support structure, which allows for the automatic or manual movement of radiation focusing assembly 111. For example,focus mechanism 115 can include a linear actuator assembly, which provides a conventional means for radiation focusing assembly 111 to be operable to move a distance d1 alongoptical path 101, as indicated inFIG. 1 byarrow 122, between a position proximate to and a position distant fromwindow 110. The linear actuator assembly may include, but is not limited to, conventional drivers and motion translation mechanisms, such as linear guides and linear rollers, which can be urged manually, and linear motors, stepper motors, hydraulic drives, and the like, which may be automated using gears, pulleys, chains, and the like. The benefit of being able to move the position of radiation focusing assembly 111 is that the area to be heated can be controlled without modifying any parts internal toprocessing chamber 102. In addition, the achievable temperature can be varied. -
Radiation energy source 114 provides radiation energy in accordance with the present invention. In one embodiment,radiation energy source 114 may include a bank of high-intensity lamps of the type conventionally used in lamp heating operations, which generally provide radiation energy as represented byrays 123 inFIG. 1 . In one embodiment,radiation energy source 114 includes a filament-less lamp, such as a high-power arc lamp. In another embodiment,radiation energy source 114 may include a bank of well-known tungsten-halogen lamps. Typically, the power requirement for eachlamp 120 is between about 500 Watts and about 50 kWatts. -
Reflector 118 may be positioned on a side ofradiation energy source 114 opposed from radiation lens assembly 111 to efficiently collect the radiation energy emitted fromradiation source 114 and direct the reflected energy as desired. As described in greater detail below, in one embodiment,reflector 118 can be used to direct radiation energy fromradiation energy source 114 toradiation focusing lens 112. In this embodiment, radiation energy is reflected as generally indicated byrepresentative rays 124. It should be understood that radiation energy fromradiation energy source 114 is not limited to any specific direction, and rays 123 and 124 indicate only a reasonable approximation. - In one embodiment,
radiation energy source 114 andreflector 118 are moveable along optical path 101 a distance d2, as represented byarrow 126. In this manner, the intensity of the radiation energy can be varied alongoptical path 101 as a function of the distance d2 ofradiation energy source 114 from radiation focusing assembly 111. This embodiment may be most beneficial when distance d1 is fixed or physically limited. - Referring now to
FIGS. 1 and 2 , in one operational embodiment (S200), a typical semiconductor loading robot (not shown) rotates toward a wafer cassette or other wafer storage device (not shown), picks upwafer 108, and loads the wafer into processing chamber 102 (S202), which may be at atmospheric pressure or under vacuum. The robot loader placeswafer 102 ontowafer support device 106, such asheat absorbing member 106 a or, alternatively onto standoffs. The robot loader then retracts and, subsequently, the processing ofwafer 108 can begin. - To raise the temperature of
wafer 108 to a processing temperature, such as between a range of about 100° C. and about 1800° C.,radiation energy source 114 is activated (S204). Radiation energy alongrays radiation energy source 114 travel toward radiation focusing assembly 111 (S206). The amount of radiation energy generated can be varied depending on the temperature requirements of the semiconductor wafer processing operation. - The radiation energy that reaches radiation focusing assembly 111 may be received directly into
radiation focusing lens 112. In addition,radiation energy collector 116 can be used to capture and re-direct radiation energy intoradiation focusing lens 112 that would otherwise have gone astray. -
Rays 128 outline arepresentative beam 130 of focused radiation energy which leavesradiation focusing lens 112 and travels throughwindow 110 ofprocessing chamber 102. Since radiation focusing assembly 111 is positioned alongoptical path 101, a substantial amount of radiation energy which travels through focusinglens 112 will necessarily travel alongoptical path 101 intowindow 110. To increase or decrease the width ofbeam 130, radiation focusing assembly 111 can be moved towardwindow 110 alongoptical path 101 the desired distance d1. Alternatively, in the event distance d1 is a fixed or limited distance,radiation energy source 114 andreflector 118 can also be moved a distance d2 alongoptical path 101 to achieve a similar result. - In one embodiment,
wafer 108 is positioned inprocessing chamber 102 onwafer support device 106 with unobstructed exposure ofwafer 108 alongoptical path 101. In this embodiment, focusedbeam 130 travels throughwindow 110 to impinge directly on at least one surface of wafer 108 (S208). The focused radiation energy causes the temperature ofwafer 108 to increase to between about 900° C. and about 1200° C. - In another embodiment, focused
beam 130 travels throughwindow 110 to impinge onheat absorbing member 106 a (S208). The focused radiation energy causes the temperature ofheat absorbing member 106 a to increase. In one embodiment, the temperature ofheat absorbing member 106 a can be raised up to between about 900° C. and about 1200° C. The temperature ofwafer 108 disposed on or nearheat absorbing member 106 a correspondingly increases to allow the desired processing ofwafer 108 to commence. -
Heat absorbing member 106 a provides temperature uniformity through heat diffusion and removes dependency on emissivity. In addition,heat absorbing member 106 a can reduce gravitational stress from the weight of the wafer. - In one embodiment, an
internal wall surface 138 opposed towindow 110 can be coated with a reflective material, such as gold and silver, with or without a UV protection layer, to create a substantially mirror surface. In this manner, any portion ofbeam 130 which impinges onwall surface 138 can be reflected towardwafer 108. - It should be understood that radiation energy provided by
radiation energy source 114 can heatlens 112. In some embodiments, a cooling means can be provided to ensure thatlens 112 does not overheat so as to become in operative.FIG. 4 illustrates one embodiment of a focusingdevice 300 that includes a cooling means. In this embodiment, focusingdevice 300 forms an enclosure having afirst side 302 of the enclosure including a lens. Asecond side 304 of the enclosure can be a non-focusing portion or optionally, can also be a lens. Theenclosed walls device 300 define apassageway 310. On eitherwall outlets - In operation as a fluid passes into
outlet 312, throughpassageway 310, and out fromoutlet 314, heat energy fromwalls -
FIG. 4 is a simplified illustration of another embodiment of a mechanism for cooling the radiation focusing lens in accordance with an embodiment of the present invention. In this embodiment, aprocessing chamber 402 includes awindow 404 mounted thereto or formed thereon. The window may be held toprocessing chamber 402 using, for example, clamps. -
Radiation focusing assembly 406, includingradiation focusing lens 408 is coupled toprocessing chamber 402, such thatradiation focusing lens 408 andwindow 404 are aligned alongoptical path 409. In this embodiment, distance d3 betweenlens 408 andwindow 404 is fixed.Radiation focusing assembly 406 defines an enclosure aroundwindow 404, which includesducts radiation focusing lens 408 as the fluid or gas passes over the lens. The flowing liquid and gas can be any substance which readily absorbs heat, yet allows the desired wavelength of photon energy to pass, for example, pure water, filtered air and dye liquids. - It should be understood that a cooling means, such as those described above or any well-known means for removing heat from a lens, can be used with any of the embodiments of the present invention.
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FIG. 5 is a simplified illustration of yet another embodiment of the present invention. In this embodiment, awafer heating apparatus 500 includes aprocess chamber 502 having more than one window, forexample window 504 andwindow 506. Each of the windows can provide optical access to the interior ofprocess chamber 502. A focusing assembly and radiation energy source can be aligned along an optical path defined by each window. For example,windows process chamber 502 andwafer 514. In this example, a first focusingassembly 508 and a firstradiation energy source 510 can be aligned along anoptical path 512 defined bywindow 504 to impinge on a first surface ofwafer 514. A second focusingassembly 516 and a secondradiation energy source 518 can be aligned along anoptical path 520 defined bywindow 506 to impinge on a second surface ofwafer 514. In this manner, radiation energy can be allowed to impinge on multiple surfaces ofwafer 514. - Alternatively, a heat absorbing member (e.g.
FIG. 1 ) can be positioned proximate or in contact with either the first or second surface ofwafer 514. The heat absorbing member can be heated by the radiationenergy entering windows heat wafer 514. -
Radiation focusing assemblies radiation energy sources - Having thus described the preferred embodiments, persons skilled in the art will recognize that changes may be made in form and detail without departing from the spirit and scope of the invention. Thus the invention is limited only by the following claims.
Claims (20)
1. An apparatus for heating a semiconductor substrate comprising:
a chamber including a window providing optical access to the interior of said chamber;
a radiation energy focusing assembly positioned in an optical path with said window to focus radiation energy emitted from a radiation energy source into said window, said focused radiation energy used to heat a semiconductor substrate disposed in said chamber; and
a heatable member positioned in said chamber in an optical path with said window, wherein said semiconductor substrate is disposed on said heatable member and wherein said heatable member is heated by said focused radiation energy.
2. The apparatus of claim 1 , further comprising an actuator for moving said focusing assembly between a first position proximate to said window and a second position distant from said window to focus said radiation energy emitted from said radiation energy source.
3. The apparatus of claim 1 , wherein said focusing assembly is positioned at a fixed distance from said window to focus said radiation energy emitted from said radiation energy source.
4. The apparatus of claim 1 , wherein said window comprises a clear quartz window mounted on a side wall of said chamber.
5. The apparatus of claim 1 , wherein said focusing assembly comprises at least one lens.
6. The apparatus of claim 1 , wherein said focusing assembly comprises a plurality of lenses used in conjunction to provide said focused radiation energy.
7. The apparatus of claim 1 , further comprising a cooling means for lowering the temperature of components of said focusing assembly.
8. (Canceled)
9. The apparatus of claim 1 , wherein said focusing assembly comprises a radiation energy collector coupled to said lens for collecting at least a portion of said radiation energy emitted by said radiation energy source and directing said at least a portion of said radiation energy at said focusing assembly.
10. The apparatus of claim 1 , further comprising a reflector disposed proximate to said radiation energy source for directing said radiation energy emitted by said radiation energy source at said focusing assembly.
11. The apparatus of claim 1 , further comprising means for moving said radiation energy source to a first position proximate to said focusing assembly and a second position distant from said focusing to adjust the intensity of said radiation energy.
12. A method for processing a semiconductor substrate comprising:
providing a chamber including a window which allows for optical access along an optical path to an interior of said chamber;
generating a radiation energy from a radiation source;
concentrating said radiation energy; and
causing said concentrated radiation energy to enter said chamber through said window to change the temperature of a semiconductor substrate disposed in said interior of said chamber by causing said concentrated radiation energy to impinge on a heat absorbing member upon which said semiconductor substrate is positioned to heat said semiconductor substrate.
13. The method of claim 12 , wherein said concentrating said radiation energy comprises directing said radiation energy through at least one lens to focus said radiation energy.
14. The method of claim 12 , wherein said concentrating said radiation energy comprises further comprises moving a focusing assembly including at least one lens between a first position and a second position to focus said radiation energy.
15. The method of claim 12 , further comprising flowing a heat absorbing fluid proximate to said lens to transfer heat between said lens and said fluid.
16. (Canceled)
17. An apparatus for heating a semiconductor substrate comprising:
a processing chamber including a window providing optical access along a first optical path to the interior of said processing chamber;
a radiation energy source external to said processing chamber which provides radiation energy along said first optical path;
a radiation energy focusing assembly including at least one lens positioned in said first optical path to focus said radiation energy emitted from said radiation energy source, said focused radiation energy used to heat a semiconductor substrate disposed in said chamber; and
a heatable member positioned in said chamber in an optical path with said window, wherein said semiconductor substrate is disposed on said heatable member and wherein said heatable member is heated by said focused radiation energy.
18. The apparatus of claim 17 , further comprising an actuator for moving said radiation energy focusing assembly between a first position proximate to said window and a second position distant from said window to focus said radiation energy emitted from said radiation energy source.
19. The apparatus of claim 17 , wherein said radiation energy focusing assembly is positioned at a fixed distance from said window to focus said radiation energy emitted from said radiation energy source.
20. The apparatus of claim 17 , wherein said radiation energy focusing assembly comprises at least one lens selected from the group of concave, convex, and Fresnel lenses and combinations thereof.
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PCT/US2004/029642 WO2005052988A2 (en) | 2003-09-08 | 2004-09-08 | Focused photon energy heating chamber |
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US10/658,227 US6862404B1 (en) | 2003-09-08 | 2003-09-08 | Focused photon energy heating chamber |
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Cited By (3)
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US20130052834A1 (en) * | 2011-08-30 | 2013-02-28 | Oc Oerlikon Balzers Ag | Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer |
CN104542751A (en) * | 2014-12-31 | 2015-04-29 | 广州焙欧机械设备有限公司 | Far-infrared reflection device |
TWI812377B (en) * | 2021-08-10 | 2023-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | A base support frame, device and method for epitaxial growth of silicon wafers |
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US9803875B2 (en) * | 2011-02-02 | 2017-10-31 | Bsh Home Appliances Corporation | Electric oven with a heating element reflector |
CN103536210A (en) * | 2012-07-12 | 2014-01-29 | 李文庆 | Heating mechanism for electric oven |
KR102271250B1 (en) * | 2013-05-15 | 2021-06-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Diffuser for lamp heating assembly |
US10475674B2 (en) * | 2015-03-25 | 2019-11-12 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus |
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Cited By (6)
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US20130052834A1 (en) * | 2011-08-30 | 2013-02-28 | Oc Oerlikon Balzers Ag | Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer |
CN103814434A (en) * | 2011-08-30 | 2014-05-21 | 欧瑞康先进科技股份公司 | Wafer holder and temperature conditioning arrangement and method of manufacturing wafer |
US9793144B2 (en) * | 2011-08-30 | 2017-10-17 | Evatec Ag | Wafer holder and temperature conditioning arrangement and method of manufacturing a wafer |
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US6862404B1 (en) | 2005-03-01 |
WO2005052988A3 (en) | 2005-08-18 |
WO2005052988A2 (en) | 2005-06-09 |
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