US20050093666A1 - Substrate holding technique - Google Patents
Substrate holding technique Download PDFInfo
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- US20050093666A1 US20050093666A1 US10/941,962 US94196204A US2005093666A1 US 20050093666 A1 US20050093666 A1 US 20050093666A1 US 94196204 A US94196204 A US 94196204A US 2005093666 A1 US2005093666 A1 US 2005093666A1
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- Prior art keywords
- chuck
- holding
- mask
- unit
- stage
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/20—Electromagnets; Actuators including electromagnets without armatures
- H01F7/206—Electromagnets for lifting, handling or transporting of magnetic pieces or material
Definitions
- This invention relates generally to technology for holding a thin plate-like substrate such as a reticle or a silicon wafer, for example, in a semiconductor manufacturing procedure or any other precision microprocessing procedures, for example.
- EUV extreme ultraviolet
- a projection exposure apparatus for projecting and transferring a reticle pattern onto a silicon wafer there is an EUV (extreme ultraviolet) exposure apparatus that uses, as a light source, exposure light of a wavelength of about 13-14 nm (extreme ultraviolet light) and that is arranged to project and photoprint a reticle pattern onto a silicon wafer in a vacuum environment and through a mirror optical system.
- EUV extreme ultraviolet
- Such EUV exposure light source will be explained in detail.
- Denoted in the drawing at 101 is a mirror reduction optical system (projection optics), and a plurality of reflection mirrors are disposed and supported precisely inside this projection optical system 101 .
- the projection optical system 101 is supported by a projection optical system base table 106 , and this base table 106 is supported by means of a supporting mechanism 108 .
- the supporting mechanism 108 comprises an anti-vibration table that supports the weight thereof while suppressing external vibration applied to the projection optical system base table 106 , and a metal bellows (not shown). It is so arranged that, when the load of a structure inside a vacuum chamber 107 (i.e., projection optical system 101 and base table 106 ) is supported from outside the chamber 107 , the vacuum level inside the vacuum chamber can be maintained while, on the other hand, any positional deviation between the vacuum chamber and the thus supported structure can be resiliently absorbed.
- a mask 103 above the projection optical system 101 , and the whole of the bottom face of the mask 103 is held by means of a mask chuck 115 .
- the mask chuck 115 is mounted to a mask stage 102 above it.
- the mask 102 stage can be driven by means of an actuator (not shown) for repeated scan exposure of the mask 103 pattern.
- Denoted in the drawing at 104 is a portion of mask stage measurement light, taking the projection optical system base table 106 as the reference of measurement.
- the position of the mask stage 102 is measured with respect to multiple axes, by means of interferometers using laser light, and the mask stage 102 is positioned on the basis of it.
- a mask stage guide 113 Disposed above the mask stage 102 is a mask stage guide 113 that guides the mask stage 102 for multiple-axis motions.
- the mask stage guide 113 is supported by a mask stage damper base table 114 .
- a wafer stage 109 Disposed below the projection optical system 101 is a wafer stage 109 being movable while holding a wafer (substrate to be exposed) 105 .
- Denoted at 110 is a portion of wafer stage measurement light, taking the projection optical system base table 106 as the reference of measurement, like for the mask stage 102 .
- the position of the wafer stage 109 is measured with respect to multiple axes, by means of interferometers using laser light, and the wafer stage 109 is positioned on the basis of it.
- a wafer stage guide 111 Disposed below the wafer stage 109 is a wafer stage guide 111 that guides the wafer stage 109 for multiple-axis motions.
- a static pressure arranged for use in a vacuum may be used, for example.
- the wafer stage guide 111 is supported by a wafer stage damper base table 112 which is arranged to support the flatness of the guiding surface of the wafer stage guide 111 very precisely.
- the wafer stage damper base table 112 is supported by an anti-vibration table or the floor on which the apparatus is mounted.
- EUV light projected from an illumination system is reflected by the exposure pattern surface of the mask 103 and then is reflected along an optical path (not shown) inside the projection optical system 101 , whereby it is projected upon the silicon wafer 105 .
- the wafer stage 109 and the mask stage 102 having a mask 3 mounted thereon are measured with respect to multiple axes by using laser light and then they are positioned. Then, the wafer 105 and the mask 103 are scanningly moved in synchronism with each other or, alternatively, one of them is held stationary and sequential exposure is carried out.
- the position of the mask stage 102 as an example, the position in a vertical direction (Z direction) of the mask reflection surface, the position with respect to two orthogonal directions (X and Y directions) along a plane (X-Y plane) perpendicular to that vertical direction, and rotations about the three orthogonal axes (X, Y and Z axes) may be measured.
- FIG. 9 is an enlarged view of the mask chuck 115 and the mask stage 102 described above.
- a foreign particle such as at 116 is sandwiched between the chucking surface of the mask chuck 115 and the mask 103 , and it adversely influences the flatness of the mask 103 .
- the mask chuck 115 is demountably mounted to the mask stage 102 , and the cleaning operation for the mask chuck 115 is carried out outside the vacuum chamber 107 .
- Japanese Patent No. 3076727 discloses a technique according to which electrostatic attracting means arranged to attract and hold, upon a stage and through an electrostatic force, an electrically conductive cassette for holding a sample such as a glass mask or a wafer, provided for electron beam irradiation, is mounted to the stage. Also, as an exposure apparatus in which a wafer is held fixed, Japanese Laid-Open Patent Application, Publication No. 2003-142393 discloses a technique according to which a pallet has a wafer electrostatic chuck for fixing a wafer.
- Japanese Laid-Open Patent Application, Publication No. 11-288099 discloses a technique according to which an exposure mask is positioned by manually pressing it against a positioning pin of a mask holding member and, in this state, the mask is held by a toggle clamp.
- chucking attracting and holding the mask chuck from the stage causes degradation of the mask chuck flatness. Also, a positional deviation of the mask chuck with respect to the mask stage leads to degradation of the mask holding precision. Moreover, an electricity supplying system for mounting and demounting a mask to and from the mask chuck has a complicated structure.
- an object holding apparatus comprising: a chuck for holding an object; a holding unit for holding said chuck; a generating unit provided in said holding unit, for generating a field related to an attraction force; a member provided in said chuck and attracted by said generating unit in accordance with the field; and a supporting unit for supporting one of said generating unit and said member, for movement at least in a direction nearing the other and in a direction away from the other.
- an object holding apparatus comprising: a chuck for holding an object; a holding unit for holding said chuck; and a measuring unit for measuring relative displacement between said chuck and said holding unit.
- an object holding apparatus comprising: a chuck for holding an object; and a holding unit for holding said chuck, wherein said chuck includes a first electrode for attracting the object with an electrostatic force and a second electrode for attracting said holding unit with an electrostatic force.
- the present invention can provide unique and useful substrate holding technology for holding a substrate at high surface precision.
- FIG. 1 is a schematic view of attracting means in a first embodiment of the present invention.
- FIG. 2 is a fragmentary and enlarged view of the attracting means of FIG. 1 .
- FIG. 3 is a schematic view of attracting means in a second embodiment of the present invention.
- FIG. 4 is a schematic view of attracting means in a third embodiment of the present invention.
- FIG. 5 is a schematic view of a fourth embodiment of the present invention, wherein a mask stage having attracting means is provided with a sensor.
- FIG. 6 is a flow chart for explaining the sequence of device manufacture.
- FIG. 7 is a flow chart for explaining a wafer process in the procedure of FIG. 6 , in detail.
- FIG. 8 is a schematic view of exposure apparatus.
- FIG. 9 is an enlarged view a mask stage and a mask chuck having a mask mounted thereon.
- FIGS. 1 and 2 illustrate, in enlarged magnification, a mask stage and a mask chuck portion, disposed above a projection optical system of an exposure apparatus such as shown in FIG. 8 .
- denoted at 1 is a mask chuck (substrate holding member), and denoted at 2 is a mask stage (stage) movable in a predetermined direction.
- the mask chuck has targets formed thereon, for measurement of position, angle and focus of the mask stage 2 .
- the scan direction of the mask stage 2 is in Y-axis direction in FIG. 1 .
- the mask chuck 1 having a mask (substrate) 3 held thereon is mounted to the mask stage 2 .
- the mask chuck 1 and the mask stage 2 are provided with attracting means for mountably and demountably supporting the mask chuck 1 on the mask stage 2 .
- the attracting means comprises a coil ion core 7 (second member) provided at the mask stage 2 side and a ferromagnetic material member (first member) provided at the mask chuck 1 side. In FIG. 1 , actually there are two sets of attracting means disposed along X direction.
- Each coil iron core 7 has an exciting coil 4 wound around the core, and the coil 7 is supported on the mask stage 2 with freedoms in Z direction, around Y axis (small freedom) and around X axis in FIG. 1 , by means of a leaf spring (resilient material) 6 .
- the rigidity of the leaf spring 6 is lower than that of the mask chuck 1 . Namely, the leaf spring 6 has a low rigidity only with respect to a vertical direction of the mask reflection surface.
- the ferromagnetic material member 5 is a plate-like member made of metal, and it is embedded at such position where the coil ion core 7 can contact thereto against the force of the leaf spring 6 , in the manner that the member 5 surface becomes approximately coplanar with the upper surface of the mask chuck 1 .
- the mounting structure for the coil ion core 7 will be described in greater detail, with reference to FIG. 2 .
- the coil iron core 7 is placed inwardly, inside the mask stage 2 , of the contact surface between the mask stage 2 and the mask chuck 1 , that is, the surface of the ferromagnetic material member 5 .
- the free end face of each leg of the coil iron core 7 can be opposed to the ferromagnetic material member 5 with a clearance.
- the coil iron core 7 is attracted toward the ferromagnetic material 5 side and is brought into contact with it, whereby the mask chuck 1 is held.
- the leaf spring 6 can absorb displacement, there is no possibility that, due to the surface precision matching between the contact surfaces of the coil iron core 7 and the ferromagnetic material member 5 , a force is applied to the mask chuck 1 to cause deformation thereof.
- the leaf spring 7 is mounted on the coil iron core 7 side to support the same.
- the leaf spring 6 may be mounted on the ferromagnetic material member 5 side to support the same. It is to be noted here that, regarding the attracting means, there are two sets of attracting means also with respect to the Y-axis direction.
- each electrostatic chuck electrode 8 is connected to the ferromagnetic material member 5 through a wire or a metal plate, while on the other hand the coil iron core 7 contacted to the ferromagnetic material member 5 is connected to an electricity supplying unit (not shown) through a wire or the like.
- the contact surface between the coil iron core 7 and the ferromagnetic material member 5 producing an electromagnetic force, is defined or functions as a portion of an electricity supplying path for the electrostatic chuck electrode 8 of the mask chuck 1 .
- the contact surface between the coil iron core 7 and the ferromagnetic material member 5 is included in the electricity supplying path for the electrostatic chuck electrode 8 .
- the invention is not limited to this.
- electricity can be supplied to the electrostatic chuck electrode 8 .
- the contact surface that produces an electromagnetic force functions as a heat transfer path for cooling the mask chuck 1 and the mask 3 .
- any produced heat can flow from the contact surface to the coil iron core and the wire, for example, and is heat-exchanged. If the contact surface between the coil iron core 7 and the ferromagnetic material member 5 is not used as the electricity supplying path, as the ferromagnetic material member 5 a material having low electric conductivity, such as ferrite, may be used.
- the exciting coil 4 is energized and, in response, a magnetic field is produced from the coil iron core 7 by which the ferromagnetic material member 5 embedded in the mask chuck 1 is magnetized and whereby the mask chuck 1 is attracted.
- the coil iron core 7 and the ferromagnetic material member 5 are mutually attracted to each other, such that the mask chuck 1 can be continuously held on the mask stage 2 .
- an electric current is applied in an opposite direction to the exciting coil 4 and thus an opposing magnetic field is applied to the ferromagnetic material member 5 , whereby it is demagnetized.
- an electric potential is applied to the two, left-hand side and right-hand side electrostatic chuck electrodes 8 .
- the mask chuck 1 can electrostatically attract approximately the entire surface of the mask bottom face and hold the same tightly.
- FIG. 3 A second embodiment of the present invention will be described with reference to FIG. 3 .
- like reference numerals are assigned to components corresponding to those of the FIG. 1 embodiment, and description therefor will be omitted. Only distinctive features will be explained.
- the second member at the mask stage 2 side i.e., coil iron core 7
- the first member at the mask chuck 1 side i.e., ferromagnetic material member 5
- the second member at the mask stage 2 side i.e., coil iron core 7
- the first member at the mask chuck 1 side i.e., ferromagnetic material member 5
- each coil iron core 7 is provided with a piezoelectric actuator 10 or, alternatively, a distance adjusting mechanism (not shown), such that the flatness of the mask chuck 1 can be corrected thereby.
- the gap distance (clearance) between the coil iron core 7 and the ferromagnetic material member 5 may be adjusted by means of the piezoelectric actuator 10 or the like, while the flatness is measured by using an external interferometer or any other measuring device.
- distortion sensors 11 may be embedded in the mask chuck 1 , at plural locations, and the adjustment may be done while measuring the surface shape by use of these distortion sensors 11 .
- measurement and adjustment may be done at start of the exposure apparatus, for example, or it may be made in various ways. It should be noted that, to each electrostatic chuck electrode 8 , an electricity supplying path such as wire or metal plate, for example, is connected, and this electricity supplying path is in turn connected to an electricity supplying unit, not shown.
- the contact between the mask chuck 1 and the mask stage 2 in the electricity supplying path is accomplished by means of a brush member, for example, which is provided on at least one of or each of the mask chuck 1 side and the mask stage 2 side.
- the attraction of the mask 3 is similar to that of the first embodiment.
- the electrostatic chuck electrodes 8 approximately the whole surface of the mask 3 bottom face can be held tightly.
- FIG. 4 A third embodiment of the present invention will be described with reference to FIG. 4 .
- like reference numerals are assigned to components corresponding to those of the embodiments of FIGS. 1-3 , and description therefor will be omitted. Only distinctive features will be explained.
- mask-chuck electrostatic chuck electrodes (electrostatic attracting means) 9 are provided above the mask chuck 1 .
- Each electrostatic chuck electrode 8 is connected to an electricity supplying unit (not shown) through an electricity supplying path such as wire or metal plate, for example.
- a connecting member such as a brush, for example, is used at the connection of electricity supplying path, between the mask chuck 1 and the mask stage 2 .
- the mask chuck 1 when the mask chuck 1 is mounted to the mask stage 2 , from an electricity supplying unit (not shown), an electric potential is applied to the mask-chuck electrostatic chuck electrodes 9 and, in response to it, the mask chuck 1 itself is attracted to the mask stage 2 by electrostatic attraction force, and it is held thereby. Since high-precision flat plane is obtainable with an electrostatic chuck (attraction by electrostatic), application of unwanted deformation to the mask chuck 1 can be avoided assuredly.
- the electrostatic chuck electrodes 9 may be provided on the mask stage 2 side to attract and hold the mask chuck 1 .
- the attraction of the mask 3 is similar to that of the first embodiment. Also in this case, approximately the entire surface of the mask 3 bottom face can be attracted and held tightly, by means of the electrostatic chuck electrodes 8 .
- FIG. 5 A fourth embodiment of the present invention will be described with reference to FIG. 5 .
- like reference numerals are assigned to components corresponding to those of the embodiments of FIGS. 1-4 , and description therefor will be omitted. Only distinctive features will be explained.
- a chuck position measuring device (interferometer) 12 which is a displacement measuring sensor for detecting any positional deviation between the mask stage 2 and the mask chuck 1 . In case there occurs a positional deviation between the mask stage 2 and the mask chuck 1 , the exposure sequence is stopped and alignment of the mask 3 is carried out again.
- the chuck position measuring device 12 is provided on the mask stage 2 of the first embodiment ( FIG. 1 ).
- the invention is not limited to this. It may be mounted to the mask stage 2 of the second embodiment or of the third embodiment. Further, in place of the mechanism for measuring a relative displacement, from the mask stage 2 side, a mask stage measurement reference may be used and displacement of the mask chuck 1 may be measured directly.
- stage system such as described above is used as a mask stage of a projection exposure apparatus such as shown in FIG. 8
- deformation of the mask chuck resulting from the surface shape of the contact area, including a foreign particle, if any, can be prevented effectively and, in turn, the surface precision of the mask as well as the performance of the apparatus can be improved significantly.
- FIG. 6 is a flow chart for explaining the procedure of manufacturing various microdevices such as semiconductor chips (e.g., ICs or LSIs), liquid crystal panels, CCDs, thin film magnetic heads or micro-machines, for example.
- Step 1 is a design process for designing a circuit of a semiconductor device.
- Step 2 is a process for making a mask on the basis of the circuit pattern design.
- Step 3 is a process for preparing a wafer by using a material such as silicon.
- Step 4 is a wafer process which is called a pre-process wherein, by using the thus prepared mask and wafer, a circuit is formed on the wafer in practice, in accordance with lithography.
- Step 5 subsequent to this is an assembling step which is called a post-process wherein the wafer having been processed at step 4 is formed into semiconductor chips.
- This step includes an assembling (dicing and bonding) process and a packaging (chip sealing) process.
- Step 6 is an inspection step wherein an operation check, a durability check an so on, for the semiconductor devices produced by step 5 , are carried out. With these processes, semiconductor devices are produced, and they are shipped (step 7 ).
- FIG. 7 is a flow chart for explaining details of the wafer process.
- Step 11 is an oxidation process for oxidizing the surface of a wafer.
- Step 12 is a CVD process for forming an insulating film on the wafer surface.
- Step 13 is an electrode forming process for forming electrodes upon the wafer by vapor deposition.
- Step 14 is an ion implanting process for implanting ions to the wafer.
- Step 15 is a resist process for applying a resist (photosensitive material) to the wafer.
- Step 16 is an exposure process for printing, by exposure, the circuit pattern of the mask on the wafer through the exposure apparatus described above.
- Step 17 is a developing process for developing the exposed wafer.
- Step 18 is an etching process for removing portions other than the developed resist image.
- Step 19 is a resist separation process for separating the resist material remaining on the wafer after being subjected to the etching process. By repeating these processes, circuit patterns are superposedly formed on the wafer.
- an exposure apparatus wherein a pattern formed on an original is projected, in a vacuum environment, onto an exposure substrate to be exposed, through a projection optical system, wherein, while moving both of the original and the exposure substrate or only the exposure substrate relative to the projection optical system by use of a stage system, the pattern of the original is repeatedly photoprinted on the exposure substrate, characterized by an original mounting and holding member for mounting the original to the stage system, wherein at least one of attracting and holding means provided at the original mounting and holding member side and attracting and holding means provided at the stage system side is mounted through a resilient member having a rigidity lower than that of the original mounting and holding member.
- the resilient member is a resiliency member having a low rigidity only in a vertical direction to the mask reflection surface.
- attracting and holding means having a clearance is provided between the original attracting and holding member and the attracting and holding means at the stage system side, wherein the flatness of the original mounting and holding member is measured and the clearance distances at plural locations of the attracting and holding means are adjusted.
- measuring means for measuring the surface precision of the original mounting and holding member uses a distortion sensor.
- the clearance distance between a ferromagnetic material member and a coil iron core is controlled by means of an actuator and on the basis of an output value of the distortion sensor or on the basis of pre-measured value.
- the attracting mechanism of the attracting and holding means uses an electromagnetic force or an electrostatic attraction force.
- a displacement measuring sensor is provided between the original mounting and holding member and the stage system.
- the original mounting and holding member is provided with a target for measurement of position, angle, or focus of the stage system.
- the contact surface for generating an electromagnetic force functions as an electricity supplying path to the original mounting and holding member.
- the contact surface for generating an electromagnetic force functions as a heat transfer path for cooling the original mounting and holding member and the mask.
- a device manufacturing method characterized by manufacturing a device by use of an exposure apparatus as recited in any one of Items (1)-(10).
Abstract
Disclosed is technology for holding a substrate and, specifically, an object holding apparatus including a chuck for holding an object, a holding unit for holding the chuck, a generating unit provided in the holding unit, for generating a field related to an attraction force, a member provided in the chuck and attracted by the generating unit in accordance with the field, and a supporting unit for supporting one of the generating unit and the member, for movement at least in a direction nearing the other and in a direction away from the other.
Description
- This invention relates generally to technology for holding a thin plate-like substrate such as a reticle or a silicon wafer, for example, in a semiconductor manufacturing procedure or any other precision microprocessing procedures, for example.
- As a projection exposure apparatus for projecting and transferring a reticle pattern onto a silicon wafer, there is an EUV (extreme ultraviolet) exposure apparatus that uses, as a light source, exposure light of a wavelength of about 13-14 nm (extreme ultraviolet light) and that is arranged to project and photoprint a reticle pattern onto a silicon wafer in a vacuum environment and through a mirror optical system.
- Referring to
FIG. 8 , such EUV exposure light source will be explained in detail. Denoted in the drawing at 101 is a mirror reduction optical system (projection optics), and a plurality of reflection mirrors are disposed and supported precisely inside this projectionoptical system 101. - The projection
optical system 101 is supported by a projection optical system base table 106, and this base table 106 is supported by means of asupporting mechanism 108. The supportingmechanism 108 comprises an anti-vibration table that supports the weight thereof while suppressing external vibration applied to the projection optical system base table 106, and a metal bellows (not shown). It is so arranged that, when the load of a structure inside a vacuum chamber 107 (i.e., projectionoptical system 101 and base table 106) is supported from outside thechamber 107, the vacuum level inside the vacuum chamber can be maintained while, on the other hand, any positional deviation between the vacuum chamber and the thus supported structure can be resiliently absorbed. - There is a
mask 103 above the projectionoptical system 101, and the whole of the bottom face of themask 103 is held by means of amask chuck 115. Themask chuck 115 is mounted to amask stage 102 above it. Themask 102 stage can be driven by means of an actuator (not shown) for repeated scan exposure of themask 103 pattern. Denoted in the drawing at 104 is a portion of mask stage measurement light, taking the projection optical system base table 106 as the reference of measurement. In the exposure apparatus ofFIG. 8 , the position of themask stage 102 is measured with respect to multiple axes, by means of interferometers using laser light, and themask stage 102 is positioned on the basis of it. Disposed above themask stage 102 is amask stage guide 113 that guides themask stage 102 for multiple-axis motions. Themask stage guide 113 is supported by a mask stage damper base table 114. - Disposed below the projection
optical system 101 is awafer stage 109 being movable while holding a wafer (substrate to be exposed) 105. Denoted at 110 is a portion of wafer stage measurement light, taking the projection optical system base table 106 as the reference of measurement, like for themask stage 102. The position of thewafer stage 109 is measured with respect to multiple axes, by means of interferometers using laser light, and thewafer stage 109 is positioned on the basis of it. - Disposed below the
wafer stage 109 is awafer stage guide 111 that guides thewafer stage 109 for multiple-axis motions. As regards the guiding method, a static pressure arranged for use in a vacuum may be used, for example. Thewafer stage guide 111 is supported by a wafer stage damper base table 112 which is arranged to support the flatness of the guiding surface of thewafer stage guide 111 very precisely. The wafer stage damper base table 112 is supported by an anti-vibration table or the floor on which the apparatus is mounted. - In exposure operation, EUV light projected from an illumination system (not shown) is reflected by the exposure pattern surface of the
mask 103 and then is reflected along an optical path (not shown) inside the projectionoptical system 101, whereby it is projected upon thesilicon wafer 105. While thewafer 105 is held by thewafer stage 109, thewafer stage 109 and themask stage 102 having amask 3 mounted thereon are measured with respect to multiple axes by using laser light and then they are positioned. Then, thewafer 105 and themask 103 are scanningly moved in synchronism with each other or, alternatively, one of them is held stationary and sequential exposure is carried out. As regards the position of themask stage 102, as an example, the position in a vertical direction (Z direction) of the mask reflection surface, the position with respect to two orthogonal directions (X and Y directions) along a plane (X-Y plane) perpendicular to that vertical direction, and rotations about the three orthogonal axes (X, Y and Z axes) may be measured. -
FIG. 9 is an enlarged view of themask chuck 115 and themask stage 102 described above. There is a possibility that a foreign particle such as at 116 is sandwiched between the chucking surface of themask chuck 115 and themask 103, and it adversely influences the flatness of themask 103. In consideration of it, themask chuck 115 is demountably mounted to themask stage 102, and the cleaning operation for themask chuck 115 is carried out outside thevacuum chamber 107. - As a fixing device for attracting and holding a thin plate-like member in a vacuum environment, Japanese Patent No. 3076727 discloses a technique according to which electrostatic attracting means arranged to attract and hold, upon a stage and through an electrostatic force, an electrically conductive cassette for holding a sample such as a glass mask or a wafer, provided for electron beam irradiation, is mounted to the stage. Also, as an exposure apparatus in which a wafer is held fixed, Japanese Laid-Open Patent Application, Publication No. 2003-142393 discloses a technique according to which a pallet has a wafer electrostatic chuck for fixing a wafer. Further, as an exposure apparatus having a mask holding member for mountably and demountably holding an exposure mask, Japanese Laid-Open Patent Application, Publication No. 11-288099 discloses a technique according to which an exposure mask is positioned by manually pressing it against a positioning pin of a mask holding member and, in this state, the mask is held by a toggle clamp.
- In a mechanism for demounting and clearing a mask chuck, chucking (attracting and holding) the mask chuck from the stage causes degradation of the mask chuck flatness. Also, a positional deviation of the mask chuck with respect to the mask stage leads to degradation of the mask holding precision. Moreover, an electricity supplying system for mounting and demounting a mask to and from the mask chuck has a complicated structure.
- It is accordingly an object of the present invention to provide a substrate holding technique by which a substrate can be held at high surface precision, in a vacuum environment.
- In accordance with an aspect of the present invention, there is provided an object holding apparatus, comprising: a chuck for holding an object; a holding unit for holding said chuck; a generating unit provided in said holding unit, for generating a field related to an attraction force; a member provided in said chuck and attracted by said generating unit in accordance with the field; and a supporting unit for supporting one of said generating unit and said member, for movement at least in a direction nearing the other and in a direction away from the other.
- In accordance with another aspect of the present invention, there is provided an object holding apparatus, comprising: a chuck for holding an object; a holding unit for holding said chuck; and a measuring unit for measuring relative displacement between said chuck and said holding unit.
- In accordance with a further aspect of the present invention, there is provided an object holding apparatus, comprising: a chuck for holding an object; and a holding unit for holding said chuck, wherein said chuck includes a first electrode for attracting the object with an electrostatic force and a second electrode for attracting said holding unit with an electrostatic force.
- Thus, the present invention can provide unique and useful substrate holding technology for holding a substrate at high surface precision.
- These and other objects, features and advantages of the present invention will become more apparent upon a consideration of the following description of the preferred embodiments of the present invention taken in conjunction with the accompanying drawings.
-
FIG. 1 is a schematic view of attracting means in a first embodiment of the present invention. -
FIG. 2 is a fragmentary and enlarged view of the attracting means ofFIG. 1 . -
FIG. 3 is a schematic view of attracting means in a second embodiment of the present invention. -
FIG. 4 is a schematic view of attracting means in a third embodiment of the present invention. -
FIG. 5 is a schematic view of a fourth embodiment of the present invention, wherein a mask stage having attracting means is provided with a sensor. -
FIG. 6 is a flow chart for explaining the sequence of device manufacture. -
FIG. 7 is a flow chart for explaining a wafer process in the procedure ofFIG. 6 , in detail. -
FIG. 8 is a schematic view of exposure apparatus. -
FIG. 9 is an enlarged view a mask stage and a mask chuck having a mask mounted thereon. - Preferred embodiments of the present invention will now be described with reference to the attached drawings.
- A first embodiment of the present invention will be described with reference to
FIGS. 1 and 2 .FIGS. 1 and 2 illustrate, in enlarged magnification, a mask stage and a mask chuck portion, disposed above a projection optical system of an exposure apparatus such as shown inFIG. 8 . InFIG. 1 , denoted at 1 is a mask chuck (substrate holding member), and denoted at 2 is a mask stage (stage) movable in a predetermined direction. The mask chuck has targets formed thereon, for measurement of position, angle and focus of themask stage 2. The scan direction of themask stage 2 is in Y-axis direction inFIG. 1 . Themask chuck 1 having a mask (substrate) 3 held thereon is mounted to themask stage 2. Themask chuck 1 and themask stage 2 are provided with attracting means for mountably and demountably supporting themask chuck 1 on themask stage 2. The attracting means comprises a coil ion core 7 (second member) provided at themask stage 2 side and a ferromagnetic material member (first member) provided at themask chuck 1 side. InFIG. 1 , actually there are two sets of attracting means disposed along X direction. - Each
coil iron core 7 has anexciting coil 4 wound around the core, and thecoil 7 is supported on themask stage 2 with freedoms in Z direction, around Y axis (small freedom) and around X axis inFIG. 1 , by means of a leaf spring (resilient material) 6. In this example, the rigidity of theleaf spring 6 is lower than that of themask chuck 1. Namely, theleaf spring 6 has a low rigidity only with respect to a vertical direction of the mask reflection surface. Theferromagnetic material member 5 is a plate-like member made of metal, and it is embedded at such position where thecoil ion core 7 can contact thereto against the force of theleaf spring 6, in the manner that themember 5 surface becomes approximately coplanar with the upper surface of themask chuck 1. - The mounting structure for the
coil ion core 7 will be described in greater detail, with reference toFIG. 2 . At a nominal position of theleaf spring 6, thecoil iron core 7 is placed inwardly, inside themask stage 2, of the contact surface between themask stage 2 and themask chuck 1, that is, the surface of theferromagnetic material member 5. With this arrangement, the free end face of each leg of thecoil iron core 7 can be opposed to theferromagnetic material member 5 with a clearance. For attraction of thecoil iron core 7 and theferromagnetic material member 5, while theleaf spring 6 deforms, thecoil iron core 7 is attracted toward theferromagnetic material 5 side and is brought into contact with it, whereby themask chuck 1 is held. In this case, since theleaf spring 6 can absorb displacement, there is no possibility that, due to the surface precision matching between the contact surfaces of thecoil iron core 7 and theferromagnetic material member 5, a force is applied to themask chuck 1 to cause deformation thereof. - In the attracting means of the first embodiment, the
leaf spring 7 is mounted on thecoil iron core 7 side to support the same. However, the invention is not limited to this. Theleaf spring 6 may be mounted on theferromagnetic material member 5 side to support the same. It is to be noted here that, regarding the attracting means, there are two sets of attracting means also with respect to the Y-axis direction. - At a lower portion inside the
mask chuck 1, opposed to themask 3, there are tow sets of plate-likeelectrostatic chuck electrodes 8 for holding themask 3. Eachelectrostatic chuck electrode 8 is connected to theferromagnetic material member 5 through a wire or a metal plate, while on the other hand thecoil iron core 7 contacted to theferromagnetic material member 5 is connected to an electricity supplying unit (not shown) through a wire or the like. In this example, the contact surface between thecoil iron core 7 and theferromagnetic material member 5, producing an electromagnetic force, is defined or functions as a portion of an electricity supplying path for theelectrostatic chuck electrode 8 of themask chuck 1. In this embodiment, as described above, the contact surface between thecoil iron core 7 and theferromagnetic material member 5 is included in the electricity supplying path for theelectrostatic chuck electrode 8. However, the invention is not limited to this. Along a different path, electricity can be supplied to theelectrostatic chuck electrode 8. Furthermore, in this embodiment, the contact surface that produces an electromagnetic force functions as a heat transfer path for cooling themask chuck 1 and themask 3. In this case, any produced heat can flow from the contact surface to the coil iron core and the wire, for example, and is heat-exchanged. If the contact surface between thecoil iron core 7 and theferromagnetic material member 5 is not used as the electricity supplying path, as the ferromagnetic material member 5 a material having low electric conductivity, such as ferrite, may be used. - In the first embodiment, for holding of the
mask chuck 1 by themask stage 2, theexciting coil 4 is energized and, in response, a magnetic field is produced from thecoil iron core 7 by which theferromagnetic material member 5 embedded in themask chuck 1 is magnetized and whereby themask chuck 1 is attracted. After the attraction and even after the voltage supply to theexciting coil 4 is discontinued, since theferromagnetic material member 5 has already been magnetized, thecoil iron core 7 and theferromagnetic material member 5 are mutually attracted to each other, such that themask chuck 1 can be continuously held on themask stage 2. For demounting themask chuck 1 from themask stage 2, an electric current is applied in an opposite direction to theexciting coil 4 and thus an opposing magnetic field is applied to theferromagnetic material member 5, whereby it is demagnetized. Further, when thecoil iron core 7 and theferromagnetic material member 7 are attracted to each other, owing to the electricity supplying path extending through the contact surface therebetween producing an electromagnetic force, an electric potential is applied to the two, left-hand side and right-hand sideelectrostatic chuck electrodes 8. By means of electric charges in that occasion, themask chuck 1 can electrostatically attract approximately the entire surface of the mask bottom face and hold the same tightly. - A second embodiment of the present invention will be described with reference to
FIG. 3 . InFIG. 3 , like reference numerals are assigned to components corresponding to those of theFIG. 1 embodiment, and description therefor will be omitted. Only distinctive features will be explained. - In the second embodiment, the second member at the
mask stage 2 side (i.e., coil iron core 7) and the first member at themask chuck 1 side (i.e., ferromagnetic material member 5) are disposed close to each other with a clearance, like the structure shown inFIG. 2 . By disposing thecoil iron core 7 and theferromagnetic material member 5 opposed to each other with a clearance as described above, unwanted deformation of themask chuck 1 due to their mutual surface precision can be avoided. Furthermore, eachcoil iron core 7 is provided with apiezoelectric actuator 10 or, alternatively, a distance adjusting mechanism (not shown), such that the flatness of themask chuck 1 can be corrected thereby. - For the flatness correction, the gap distance (clearance) between the
coil iron core 7 and theferromagnetic material member 5 may be adjusted by means of thepiezoelectric actuator 10 or the like, while the flatness is measured by using an external interferometer or any other measuring device. As an alternative,distortion sensors 11 may be embedded in themask chuck 1, at plural locations, and the adjustment may be done while measuring the surface shape by use of thesedistortion sensors 11. As for such adjustment, measurement and adjustment may be done at start of the exposure apparatus, for example, or it may be made in various ways. It should be noted that, to eachelectrostatic chuck electrode 8, an electricity supplying path such as wire or metal plate, for example, is connected, and this electricity supplying path is in turn connected to an electricity supplying unit, not shown. In this case, the contact between themask chuck 1 and themask stage 2 in the electricity supplying path is accomplished by means of a brush member, for example, which is provided on at least one of or each of themask chuck 1 side and themask stage 2 side. The attraction of themask 3 is similar to that of the first embodiment. In this case, by means of theelectrostatic chuck electrodes 8, approximately the whole surface of themask 3 bottom face can be held tightly. - A third embodiment of the present invention will be described with reference to
FIG. 4 . InFIG. 4 , like reference numerals are assigned to components corresponding to those of the embodiments ofFIGS. 1-3 , and description therefor will be omitted. Only distinctive features will be explained. - In the third embodiment, in order that a
mask chuck 1 is held on amask stage 3 by electrostatic attraction force, mask-chuck electrostatic chuck electrodes (electrostatic attracting means) 9 are provided above themask chuck 1. Eachelectrostatic chuck electrode 8 is connected to an electricity supplying unit (not shown) through an electricity supplying path such as wire or metal plate, for example. In this example, a connecting member such as a brush, for example, is used at the connection of electricity supplying path, between themask chuck 1 and themask stage 2. With this structure, when themask chuck 1 is mounted to themask stage 2, from an electricity supplying unit (not shown), an electric potential is applied to the mask-chuckelectrostatic chuck electrodes 9 and, in response to it, themask chuck 1 itself is attracted to themask stage 2 by electrostatic attraction force, and it is held thereby. Since high-precision flat plane is obtainable with an electrostatic chuck (attraction by electrostatic), application of unwanted deformation to themask chuck 1 can be avoided assuredly. As an alternative, theelectrostatic chuck electrodes 9 may be provided on themask stage 2 side to attract and hold themask chuck 1. The attraction of themask 3 is similar to that of the first embodiment. Also in this case, approximately the entire surface of themask 3 bottom face can be attracted and held tightly, by means of theelectrostatic chuck electrodes 8. - A fourth embodiment of the present invention will be described with reference to
FIG. 5 . InFIG. 5 , like reference numerals are assigned to components corresponding to those of the embodiments ofFIGS. 1-4 , and description therefor will be omitted. Only distinctive features will be explained. - In the fourth embodiment, at the bottom surface portion of the
mask stage 2, avoiding themask chuck 1, a chuck position measuring device (interferometer) 12 which is a displacement measuring sensor for detecting any positional deviation between themask stage 2 and themask chuck 1, is provided. In case there occurs a positional deviation between themask stage 2 and themask chuck 1, the exposure sequence is stopped and alignment of themask 3 is carried out again. - In the forth embodiment, the chuck
position measuring device 12 is provided on themask stage 2 of the first embodiment (FIG. 1 ). However, the invention is not limited to this. It may be mounted to themask stage 2 of the second embodiment or of the third embodiment. Further, in place of the mechanism for measuring a relative displacement, from themask stage 2 side, a mask stage measurement reference may be used and displacement of themask chuck 1 may be measured directly. - Where a stage system such as described above is used as a mask stage of a projection exposure apparatus such as shown in
FIG. 8 , when the mask chuck is chucked, deformation of the mask chuck resulting from the surface shape of the contact area, including a foreign particle, if any, can be prevented effectively and, in turn, the surface precision of the mask as well as the performance of the apparatus can be improved significantly. - Although in the foregoing description the invention has been described with reference to embodiments wherein it is applied to a mask stage system, the present invention is applicable also to a wafer stage system, as a matter of course.
- Next, an embodiment of a device manufacturing method which uses an exposure apparatus such as described above, will be explained.
-
FIG. 6 is a flow chart for explaining the procedure of manufacturing various microdevices such as semiconductor chips (e.g., ICs or LSIs), liquid crystal panels, CCDs, thin film magnetic heads or micro-machines, for example.Step 1 is a design process for designing a circuit of a semiconductor device.Step 2 is a process for making a mask on the basis of the circuit pattern design.Step 3 is a process for preparing a wafer by using a material such as silicon.Step 4 is a wafer process which is called a pre-process wherein, by using the thus prepared mask and wafer, a circuit is formed on the wafer in practice, in accordance with lithography.Step 5 subsequent to this is an assembling step which is called a post-process wherein the wafer having been processed atstep 4 is formed into semiconductor chips. This step includes an assembling (dicing and bonding) process and a packaging (chip sealing) process.Step 6 is an inspection step wherein an operation check, a durability check an so on, for the semiconductor devices produced bystep 5, are carried out. With these processes, semiconductor devices are produced, and they are shipped (step 7). -
FIG. 7 is a flow chart for explaining details of the wafer process.Step 11 is an oxidation process for oxidizing the surface of a wafer.Step 12 is a CVD process for forming an insulating film on the wafer surface.Step 13 is an electrode forming process for forming electrodes upon the wafer by vapor deposition.Step 14 is an ion implanting process for implanting ions to the wafer.Step 15 is a resist process for applying a resist (photosensitive material) to the wafer.Step 16 is an exposure process for printing, by exposure, the circuit pattern of the mask on the wafer through the exposure apparatus described above.Step 17 is a developing process for developing the exposed wafer.Step 18 is an etching process for removing portions other than the developed resist image.Step 19 is a resist separation process for separating the resist material remaining on the wafer after being subjected to the etching process. By repeating these processes, circuit patterns are superposedly formed on the wafer. - With these processes, high density microdevices can be manufactured.
- Although some preferred embodiments of the present invention have been described in the foregoing, in different aspects, the present invention can be embodied as follows.
- (1) In an exposure apparatus wherein a pattern formed on an original is projected, in a vacuum environment, onto an exposure substrate to be exposed, through a projection optical system, wherein, while moving both of the original and the exposure substrate or only the exposure substrate relative to the projection optical system by use of a stage system, the pattern of the original is repeatedly photoprinted on the exposure substrate, characterized by an original mounting and holding member for mounting the original to the stage system, wherein at least one of attracting and holding means provided at the original mounting and holding member side and attracting and holding means provided at the stage system side is mounted through a resilient member having a rigidity lower than that of the original mounting and holding member.
- (2) In an exposure apparatus according to Item (1) above, the resilient member is a resiliency member having a low rigidity only in a vertical direction to the mask reflection surface.
- (3) In an exposure apparatus according to Item (1) or (2) above, attracting and holding means having a clearance is provided between the original attracting and holding member and the attracting and holding means at the stage system side, wherein the flatness of the original mounting and holding member is measured and the clearance distances at plural locations of the attracting and holding means are adjusted.
- (4) In an exposure apparatus according to Item (3) above, measuring means for measuring the surface precision of the original mounting and holding member uses a distortion sensor.
- (5) In an exposure apparatus according to Item (4) above, the clearance distance between a ferromagnetic material member and a coil iron core is controlled by means of an actuator and on the basis of an output value of the distortion sensor or on the basis of pre-measured value.
- (6) In an exposure apparatus according to any one of Items (1) to (5), the attracting mechanism of the attracting and holding means uses an electromagnetic force or an electrostatic attraction force.
- (7) In an exposure apparatus according to any one of Items (1)-(6), a displacement measuring sensor is provided between the original mounting and holding member and the stage system.
- (8) In an exposure apparatus according to any one of Items (1)-(7), the original mounting and holding member is provided with a target for measurement of position, angle, or focus of the stage system.
- (9) In an exposure apparatus according to any one of Items (1)-(8), the contact surface for generating an electromagnetic force functions as an electricity supplying path to the original mounting and holding member.
- (10) In an exposure apparatus according to any one of Items (1)-(9), the contact surface for generating an electromagnetic force functions as a heat transfer path for cooling the original mounting and holding member and the mask.
- (11) A device manufacturing method characterized by manufacturing a device by use of an exposure apparatus as recited in any one of Items (1)-(10).
- While the invention has been described with reference to the structures disclosed herein, it is not confined to the details set forth and this application is intended to cover such modifications or changes as may come within the purposes of the improvements or the scope of the following claims.
- This application claims priority from Japanese Patent Application No. 2003-324214 filed Sep. 17, 2003, for which is hereby incorporated by reference.
Claims (19)
1. An object holding apparatus, comprising:
a chuck for holding an object;
a holding unit for holding said chuck;
a generating unit provided in said holding unit, for generating a field related to an attraction force;
a member provided in said chuck and attracted by said generating unit in accordance with the field; and
a supporting unit for supporting one of said generating unit and said member, for movement at least in a direction nearing the other and in a direction away from the other.
2. An apparatus according to claim 1 , wherein said generating unit generates a magnetic field.
3. An apparatus according to claim 2 , wherein said generating unit includes a core and a coil for energizing the core.
4. An apparatus according to claim 2 , wherein said member includes a magnetic material.
5. An apparatus according to claim 1 , wherein said supporting unit includes a member having a rigidity lower than that of said chuck, with respect to said directions.
6. An apparatus according to claim 5 , wherein said supporting unit includes a leaf spring.
7. An apparatus according to claim 1 , wherein said generating unit and said member are brought into contact with each other, by the attraction force.
8. An apparatus according to claim 7 , wherein a heat abstraction path is defined by the contact.
9. An apparatus according to claim 7 , wherein said chuck includes a mechanism for holding the object, and wherein an electricity supplying path is defined by the contact.
10. An apparatus according to claim 1 , wherein said holding unit holds said chuck by means of the attraction force and without contact.
11. An apparatus according to claim 10 , wherein said supporting unit includes an actuator for moving one of said generating unit and said member.
12. An apparatus according to claim 11 , wherein said actuator comprises a piezoelectric device.
13. An apparatus according to claim 7 , further comprising a distortion sensor for measuring distortion of said chuck, wherein said actuator is controlled on the basis of an output of said distortion sensor.
14. An apparatus according to claim 7 , further comprising a measuring unit for measuring relative displacement of said chuck and said holding unit.
15. An apparatus according to claim 1 , wherein said generating unit generates an electrostatic field.
16. An object holding apparatus, comprising:
a chuck for holding an object;
a holding unit for holding said chuck; and
a measuring unit for measuring relative displacement between said chuck and said holding unit.
17. An object holding apparatus, comprising:
a chuck for holding an object; and
a holding unit for holding said chuck,
wherein said chuck includes a first electrode for attracting the object with an electrostatic force and a second electrode for attracting said holding unit with an electrostatic force.
18. An exposure apparatus, comprising:
exposure means for exposing a substrate to a pattern of an original; and
an object holding apparatus as recited in any one of claims 1, 16 and 17.
19. A device manufacturing method including a process for exposing a substrate to a pattern of an original by use of an exposure apparatus as recited in claim 18.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/675,868 US7999919B2 (en) | 2003-09-17 | 2007-02-16 | Substrate holding technique |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003324214A JP4447872B2 (en) | 2003-09-17 | 2003-09-17 | Stage apparatus, exposure apparatus using the stage apparatus, and device manufacturing method using the exposure apparatus |
JP324214/2003(PAT.) | 2003-09-17 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/675,868 Division US7999919B2 (en) | 2003-09-17 | 2007-02-16 | Substrate holding technique |
Publications (2)
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US20050093666A1 true US20050093666A1 (en) | 2005-05-05 |
US7212277B2 US7212277B2 (en) | 2007-05-01 |
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US10/941,962 Expired - Fee Related US7212277B2 (en) | 2003-09-17 | 2004-09-16 | Substrate holding technique |
US11/675,868 Expired - Fee Related US7999919B2 (en) | 2003-09-17 | 2007-02-16 | Substrate holding technique |
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US11/675,868 Expired - Fee Related US7999919B2 (en) | 2003-09-17 | 2007-02-16 | Substrate holding technique |
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JP (1) | JP4447872B2 (en) |
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US20060060146A1 (en) * | 2004-09-21 | 2006-03-23 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus and methods |
US20060114433A1 (en) * | 2004-10-20 | 2006-06-01 | Canon Kabushiki Kaisha | Exposure apparatus, and device manufacturing method |
US20070157835A1 (en) * | 2005-12-29 | 2007-07-12 | Tracy Kucaba | Method for mounting a printing plate on a mounting plate |
US20110018182A1 (en) * | 2009-07-24 | 2011-01-27 | The Boeing Company | Electromagnetic Clamping System for Manufacturing Large Structures |
US20130263431A1 (en) * | 2008-09-19 | 2013-10-10 | The Boeing Company | Electromagnetic Clamping Device |
US20140145803A1 (en) * | 2011-07-29 | 2014-05-29 | Ceram Tec Gmbh | Electromagnetic relay |
US20150074963A1 (en) * | 2012-10-10 | 2015-03-19 | The Boeing Company | Manufacturing method and robotic assembly system |
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JP2006303156A (en) * | 2005-04-20 | 2006-11-02 | Nikon Corp | Electrostatic chuck equipment and aligner |
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US20060114433A1 (en) * | 2004-10-20 | 2006-06-01 | Canon Kabushiki Kaisha | Exposure apparatus, and device manufacturing method |
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US20070157835A1 (en) * | 2005-12-29 | 2007-07-12 | Tracy Kucaba | Method for mounting a printing plate on a mounting plate |
US9021704B2 (en) | 2008-09-19 | 2015-05-05 | The Boeing Company | Electromagnetic clamping method |
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US20110018182A1 (en) * | 2009-07-24 | 2011-01-27 | The Boeing Company | Electromagnetic Clamping System for Manufacturing Large Structures |
US20140145803A1 (en) * | 2011-07-29 | 2014-05-29 | Ceram Tec Gmbh | Electromagnetic relay |
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US10022781B2 (en) * | 2012-10-10 | 2018-07-17 | The Boeing Company | Manufacturing method and robotic assembly system |
US20170148650A1 (en) * | 2014-12-01 | 2017-05-25 | Industrial Technology Research Institute | Electric-programmable magnetic module |
US10147622B2 (en) * | 2014-12-01 | 2018-12-04 | Industrial Technology Research Institute | Electric-programmable magnetic module |
CN111244012A (en) * | 2018-11-29 | 2020-06-05 | 昆山工研院新型平板显示技术中心有限公司 | Transfer device and method for transferring micro-component |
Also Published As
Publication number | Publication date |
---|---|
JP4447872B2 (en) | 2010-04-07 |
US20070139851A1 (en) | 2007-06-21 |
JP2005093654A (en) | 2005-04-07 |
US7999919B2 (en) | 2011-08-16 |
US7212277B2 (en) | 2007-05-01 |
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