US20050130339A1 - Protected switch and techniques to manufacture the same - Google Patents
Protected switch and techniques to manufacture the same Download PDFInfo
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- US20050130339A1 US20050130339A1 US10/898,428 US89842804A US2005130339A1 US 20050130339 A1 US20050130339 A1 US 20050130339A1 US 89842804 A US89842804 A US 89842804A US 2005130339 A1 US2005130339 A1 US 2005130339A1
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- over
- protective coating
- forming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
Definitions
- MEMS micromechanical system
- MEMS switches have been found to be advantageous over traditional solid-state switches.
- MEMS switches have been found to have superior power efficiency, low insertion loss, and excellent electrical isolation.
- a switch is often required to perform billions of switching cycles. Over time, the metal contacts may wear down thereby increasing contact resistance and leading to reliability issues.
- FIG. 1 depicts in cross section a switch in accordance with an embodiment of the present invention.
- FIG. 2 depicts one possible process that may be used to construct a switch in accordance with an embodiment of the present invention.
- FIGS. 3A to 3 K depict cross sections of structures constructed in accordance with an embodiment of the present invention.
- FIG. 4 depicts a process that can be used to provide a protection layer.
- FIG. 5 depicts one possible process that may be used to construct a switch in accordance with an embodiment of the present invention.
- FIGS. 6A to 6 I depict cross sections of structures constructed in accordance with an embodiment of the present invention.
- FIG. 1 depicts in cross section a switch 100 , in accordance with an embodiment of the present invention.
- Switch 100 may include base 310 , arm 335 , contact surface 343 , second contact 320 C, and actuation 320 B.
- Base 310 may support actuation 320 B, second contact 320 C and arm 335 .
- arm 335 may lower contact surface 343 to electrically contact second contact 320 C.
- second contact 320 C may have a durable protective coating layer 340 that may protect second contact 320 C from wear.
- Protective coating layer 340 may include an array of densely packed multi-walled or single-walled carbon protections and may be formed over second contact 320 C. When the voltage between actuation 320 B and arm 335 is removed, arm 335 may restore to its original shape.
- An array of carbon nanotubes may conduct a very high density of current with low resistance. Carbon nanotubes may also provide mechanical properties of high flexibility, strength, and resilience. Carbon nanotubes may provide electrical conductivity even when elastically deformed. Each nanotube may have a very small diameter (e.g., 1 to 100 nm). An array of nanotubes may provide electrical contact with non-flat surfaces by a large number of contact points. Furthermore, nanotubes may penetrate any contamination layer on the contact surface thus increasing the reliability of electrical conductivity with the contact.
- FIG. 2 depicts one possible process that may be used to construct switches.
- Action 210 may include providing metal layer 320 over silicon surface 310 .
- FIG. 3A depicts in cross section an example structure that may result from action 210 .
- a suitable implementation of silicon surface 310 is a silicon wafer.
- Suitable materials of layer 320 include silver, gold, and/or aluminum.
- a suitable technique to provide metal layer 320 includes sputter deposition or physical vapor deposition.
- Action 220 may include removing portions of metal layer 320 to form layers 320 A, 320 B, and 320 C.
- FIG. 3B depicts in cross section an example structure that may result from action 220 .
- Layer 320 B may be referred to as actuation 320 B.
- Layer 320 C may be referred to as second contact 320 C.
- a suitable technique to remove portions of layer 320 includes: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface of layer 320 that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF 4 or C 2 F 6 ), or a combination of nitric acid with sulfuric acid to remove portions of layer 320 that are not covered by photoresist; and (3) removing photoresist by using a resist stripper solvent.
- fluorinated hydrocarbons e.g., CF 4 or C 2 F 6
- Action 230 may include providing and shaping a catalyst layer.
- FIG. 3C depicts in cross section an example structure that may result from action 230 .
- Catalyst layer 325 may increase adhesion of a protective layer as well increase mechanical strength and also reduce contact resistance of the protective layer.
- Suitable materials of the catalyst layer include: cobalt, iron, nickel, molybdenum or any metal.
- a suitable technique to provide the catalyst layer includes sputtering, evaporation, or any method to deposit thin metal film.
- a suitable technique to remove portions of the catalyst layer to form catalyst layer 325 includes: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface of the catalyst layer that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF 4 or C 2 F 6 ), or a combination of nitric acid with sulfuric acid to remove portions of the catalyst layer that are not covered by photoresist; and (3) removing photoresist by using a resist stripper solvent.
- a suitable thickness of catalyst layer 325 may be 1 to 100 nm (from contact with second contact 320 C).
- Action 240 may include providing and shaping a sacrificial layer.
- FIG. 3D depicts in cross section an example structure that may result from action 240 .
- Suitable materials of a sacrificial layer include SiO 2 , polymer, glass-based materials, and/or metals (e.g., copper).
- Suitable techniques to provide the sacrificial layer include (1) sputtering, chemical vapor deposition (CVD), spin coating, or physical vapor deposition followed by (2) polishing a surface of the sacrificial layer using, e.g., chemical mechanical polish (CMP).
- CVD chemical vapor deposition
- CMP chemical mechanical polish
- Suitable techniques to shape the sacrificial layer to form sacrificial layer 330 include: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface of the sacrificial layer that are not to be removed; (2) providing an HF solution to remove exposed portions of the sacrificial layer; and (3) removing photoresist by using a resist stripper solvent.
- Action 250 may include providing and shaping a beam.
- FIG. 3E depicts in cross section an example structure that may result from action 250 .
- a suitable material of the beam includes gold and/ or aluminum.
- the beam may be the same material but does not have to be the same material as that of second contact 320 C.
- a suitable technique to provide the beam includes sputter deposition or physical vapor deposition.
- a suitable technique to remove portions of the beam to form beam 335 includes: (1) applying photolithography using a mask and photoresist to cover the exposed surface of the beam that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF 4 or C 2 F 6 ) or a combination of nitric acid with sulfuric acid; and (3) removing photoresist by using a resist stripper solvent.
- fluorinated hydrocarbons e.g., CF 4 or C 2 F 6
- Action 260 may include removing sacrificial layer 330 .
- FIG. 3F depicts in cross section an example structure that may result from action 260 .
- a suitable technique to remove remaining sacrificial layer 330 includes submerging the structure depicted in FIG. 3E into an HF solution.
- Action 270 may include providing protection layer 340 over catalyst layer 325 .
- FIG. 3G depicts in cross section an example structure that may result from action 270 .
- protection layer 340 includes an array of adjacent and potentially contacting carbon nanotubes.
- FIG. 3H depicts an array of adjacent carbon nanotubes 341 bonded to catalyst layer 325 , although an array of adjacent carbon nanotubes 341 may be bonded to other surfaces.
- Each nanotube may have a very small diameter (e.g., 1 to 100 nm).
- Action 270 may include utilizing a CVD chamber to provide methane, ethylene, or carbon monoxide gas and heating the chamber to form carbon over the catalyst layer 325 .
- a thickness of protection layer 340 may be based on time that gas flows over the catalyst layer 325 .
- catalyst layer 325 may prevent reaction of the second contact 320 C with reactive gases and improve the efficiency of metal catalysts that are applied during growth of protection layer 340 .
- a catalyst layer 325 is not provided and instead, action 270 includes providing protection layer 342 over layer 320 C (hereafter action 270 A).
- Protection layer 342 includes an array of adjacent and potentially contacting carbon nanotubes.
- FIG. 3I depicts in cross section an example structure that may result from action 270 A.
- a bonding material such as thiol can be used to bond protection layer 342 to layer 320 C. The bonding material may provide electrical signal conductance between the protection layer 342 and layer 320 C.
- FIG. 4 depicts a process that can be used in action 270 A to provide protection layer 342 over second contact 320 C.
- carbon nanotubes may be covered with a protective film such as photoresist over portions that are not to be bonded with second contact 320 C.
- an adhesive such as thiol may be bonded to the portion of the carbon nanotubes that are to be bonded to second contact 320 C.
- carbon nanotubes with adhesive portions may be dispersed into a solvent.
- carbon nanotubes may be bonded to second contact 320 C by for example providing the solvent mixture with carbon nanotubes over second contact 320 C. For example, a tip or side of each carbon nanotube may be bonded to second contact 320 C.
- Action 280 may include coating or partially coating protection layer 340 or 342 with respective second metal layer 345 or 355 .
- action 280 may include utilizing physical deposition or sputtering methods to provide second metal layer 345 or 355 .
- Suitable materials of second metal layer 345 and 355 include, but are not limited to, titanium, gold, aluminum, and/or silver.
- FIGS. 3J and 3K depict examples of switches with respective second metal layer 345 and 355 provided over respective protection layers 340 and 342 .
- Second metal layers 345 and 355 can reduce contact resistance between respective protection layers 340 and 342 and an opposite electrode (e.g., surface 343 ). Second metal layer 345 or 355 may reduce Van de Waals interaction when second metal layer 345 or 355 is in contact with the opposite electrode, so that two electrodes can be separate more easily when the switch is turned “off” to provide a faster switching action.
- FIG. 6F depicts in cross section a switch 700 , in accordance with an embodiment of the present invention.
- Switch 700 may include base 610 , arm 650 , second contact 620 C, and actuation 620 B.
- Base 610 may support actuation 620 B, second contact 620 C, and arm 650 .
- arm 650 may lower to electrically contact second contact 620 C using surface 675 .
- arm 650 may have a durable protective coating layer 660 that may protect arm 650 from wear. When the voltage between actuation 620 B and arm 650 is removed, arm 650 may restore to its original shape.
- Protective coating layer 660 may include an array of densely packed multi-walled or single-walled carbon protections.
- An array of carbon nanotubes may conduct a very high density of current with low resistance. Carbon nanotubes may also provide mechanical properties of high flexibility, strength, and resilience. Carbon nanotubes may provide electrical conductivity even when elastically deformed. Each nanotube may have a very small diameter (e.g., 1 to 100 nm). An array of nanotubes may provide electrical contact with non-flat surfaces by a large number of contact points. Furthermore, nanotubes may penetrate any contamination layer on the contact surface thus increasing the reliability of electrical conductivity with the contact.
- FIG. 5 depicts one possible process that may be used to construct switches.
- Action 510 includes providing and shaping a metal layer over a silicon surface.
- FIG. 6A depicts in cross section an example structure that may result from action 510 .
- a suitable implementation of silicon surface 610 is a silicon wafer.
- Suitable materials of layer 620 include silver, gold, and/ or aluminum.
- a suitable technique to provide metal layer 620 includes sputter deposition or physical vapor deposition. Shaping the metal layer 620 may also include removing portions of layer 620 to form layers 620 A, 620 B and 620 C.
- a suitable technique to remove portions of layer 620 includes: (1) applying photolithography using a mask and photoresist to cover the exposed surface of layer 620 that are not to be removed; (2) applying fluorinated hydrocarbons (e.g., CF 4 or C 2 F 6 ), or a combination of nitric acid with sulfuric acid; and (3) removing photoresist by using a resist stripper solvent.
- layer 620 B may otherwise be referred to as actuation 620 B
- layer 620 C may otherwise be referred to as second contact 620 C.
- Action 520 includes providing and shaping a sacrificial layer.
- FIG. 6B depicts in cross section an example structure that may result from action 520 .
- Suitable materials of the sacrificial layer include SiO 2 , polymer, glass-based materials, and/or metals (e.g., copper).
- Suitable techniques to provide the sacrificial layer include (1) sputtering, chemical vapor deposition (CVD), or physical vapor deposition followed by (2) polishing a surface of the sacrificial layer using, e.g., chemical mechanical polishing (CMP). Regions to form a portion of an arm and a catalyst region may be removed from the sacrificial layer.
- CVD chemical vapor deposition
- CMP chemical mechanical polishing
- Suitable techniques to shape the sacrificial layer includes: (1) applying photolithography using a mask and photoresist to cover the exposed surface of the sacrificial layer that is not to be removed; (2) providing an HF solution to remove exposed portions of the sacrificial layer; and (3) removing photoresist by using a resist stripper solvent.
- the depth of removal of sacrificial layer can be controlled by the HF etching speed and etching time.
- Action 530 includes forming a catalyst layer in a portion of the sacrificial layer.
- FIG. 6C depicts in cross section an example structure that may result from action 530 .
- Catalyst layer 640 may increase adhesion of a protective layer formed over the catalyst layer as well as increase mechanical strength and reduce contact resistance of the protective layer.
- Suitable materials of catalyst layer 640 include cobalt, iron, nickel, molybdenum or any metal.
- a suitable technique to provide catalyst layer 640 includes sputtering, evaporation, or any method to deposit thin metal film over the relevant portion of the sacrificial layer.
- a suitable thickness of catalyst layer 640 may be 1 to 100 nm (from contact with arm 650 ).
- a suitable technique to remove portions of the catalyst layer to form catalyst layer 640 includes: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface of the catalyst layer that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF 4 or C 2 F 6 ), or a combination of nitric acid with sulfuric acid to remove portions of the catalyst layer that are not covered by photoresist; and (3) removing photoresist by using a resist stripper solvent.
- Another suitable technique to remove portions of the catalyst layer to form catalyst layer 640 includes polishing a surface of catalyst layer 640 and sacrificial layer using, e.g., chemical mechanical polishing (CMP).
- Action 540 may include providing and shaping a beam.
- FIG. 6D depicts in cross section an example structure that may result from action 540 .
- a suitable material of the beam includes gold and/or aluminum.
- the beam may be the same material but does not have to be the same material as that of metal layer 620 .
- a suitable technique to provide the beam includes sputter deposition or physical vapor deposition.
- a suitable technique to shape the beam includes: (1) applying photolithography using a mask and photoresist to cover the exposed surface of the beam that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF 4 or C 2 F 6 ), or a combination of nitric acid with sulfuric acid; and (3) removing photoresist by using a resist stripper solvent.
- fluorinated hydrocarbons e.g., CF 4 or C 2 F 6
- Action 550 may include removing sacrificial layer 630 .
- a suitable technique to remove sacrificial layer 630 includes submerging the structure depicted in FIG. 6D into an HF solution.
- Action 560 may include providing protection layer 660 over catalyst layer 640 .
- FIG. 6F depicts in cross section an example structure that may result from action 560 .
- protection layer 660 includes an array of adjacent and potentially contacting carbon nanotubes.
- the array of carbon nanotubes may be similar to those described with respect to FIG. 3H .
- Each nanotube may have a very small diameter (e.g., 1 to 100 nm).
- Action 560 may include utilizing a CVD chamber to provide methane, ethylene, or carbon monoxide gas and heating the chamber to form carbon over catalyst layer 640 .
- a thickness of protection layer 660 may be based on time that gas flows over the catalyst layer 640 .
- catalyst layer 640 may prevent reaction of arm 650 with reactive gases and improve the efficiency of metal catalysts that are applied during growth of protection layer 660 .
- catalyst layer 640 is not provided and instead, action 560 includes providing protection layer 645 onto arm 650 (hereafter action 560 A) and opposite second contact 620 C.
- FIG. 6G depicts in cross section an example structure that may result from action 560 A.
- a bonding material such as thiol can be used to bond protection layer 645 to arm 650 .
- the bonding material may provide electrical signal conductance between protection layer 645 and arm 650 .
- a process similar to that described with respect to FIG. 4 may be used to provide protection layer 645 over arm 650 .
- Some embodiments of process 500 may include action 570 .
- Action 570 may include coating or partially coating protection layer 645 or 660 with respective second metal layer 670 or 680 .
- action 570 may include utilizing simple physical deposition or sputtering methods to provide second metal layer 670 or 680 .
- Suitable materials of second metal layer 670 and 680 include, but are not limited to, titanium, aluminum, gold, and/or silver.
- FIGS. 6H and 6I depict examples of switches with second metal layers 670 and 680 provided over respective protection layers 645 and 660 .
- Second metal layers 670 and 680 can reduce contact resistance between protection layers 645 and 660 and an opposite electrode (e.g., second contact 620 C). Second metal layers 670 and 680 may reduce Van de Waals interaction with an opposite electrode, so that two electrodes can be separate more easily when the switch is turned “off” to provide a faster switching action.
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Abstract
Briefly, micromechanical system (MEMS) switches that utilize protective layers to protect electrical contact points.
Description
- The subject matter disclosed herein generally relates to micromechanical system (MEMS) switches.
- The use of MEMS switches has been found to be advantageous over traditional solid-state switches. For example, MEMS switches have been found to have superior power efficiency, low insertion loss, and excellent electrical isolation. However, a switch is often required to perform billions of switching cycles. Over time, the metal contacts may wear down thereby increasing contact resistance and leading to reliability issues.
-
FIG. 1 depicts in cross section a switch in accordance with an embodiment of the present invention. -
FIG. 2 depicts one possible process that may be used to construct a switch in accordance with an embodiment of the present invention. -
FIGS. 3A to 3K depict cross sections of structures constructed in accordance with an embodiment of the present invention. -
FIG. 4 depicts a process that can be used to provide a protection layer. -
FIG. 5 depicts one possible process that may be used to construct a switch in accordance with an embodiment of the present invention. -
FIGS. 6A to 6I depict cross sections of structures constructed in accordance with an embodiment of the present invention. - Note that use of the same reference numbers in different figures indicates the same or like elements.
- Structure
-
FIG. 1 depicts in cross section aswitch 100, in accordance with an embodiment of the present invention.Switch 100 may includebase 310,arm 335,contact surface 343,second contact 320C, andactuation 320B.Base 310 may supportactuation 320B,second contact 320C andarm 335. When a voltage is applied betweenactuation 320B andarm 335,arm 335 maylower contact surface 343 to electrically contactsecond contact 320C. In accordance with an embodiment of the present invention,second contact 320C may have a durableprotective coating layer 340 that may protectsecond contact 320C from wear.Protective coating layer 340 may include an array of densely packed multi-walled or single-walled carbon protections and may be formed oversecond contact 320C. When the voltage betweenactuation 320B andarm 335 is removed,arm 335 may restore to its original shape. - An array of carbon nanotubes may conduct a very high density of current with low resistance. Carbon nanotubes may also provide mechanical properties of high flexibility, strength, and resilience. Carbon nanotubes may provide electrical conductivity even when elastically deformed. Each nanotube may have a very small diameter (e.g., 1 to 100 nm). An array of nanotubes may provide electrical contact with non-flat surfaces by a large number of contact points. Furthermore, nanotubes may penetrate any contamination layer on the contact surface thus increasing the reliability of electrical conductivity with the contact.
- Process to Make Structure
- In accordance with an embodiment of the present invention,
FIG. 2 depicts one possible process that may be used to construct switches. Action 210 may include providingmetal layer 320 oversilicon surface 310.FIG. 3A depicts in cross section an example structure that may result fromaction 210. A suitable implementation ofsilicon surface 310 is a silicon wafer. Suitable materials oflayer 320 include silver, gold, and/or aluminum. A suitable technique to providemetal layer 320 includes sputter deposition or physical vapor deposition. -
Action 220 may include removing portions ofmetal layer 320 to formlayers FIG. 3B depicts in cross section an example structure that may result fromaction 220.Layer 320B may be referred to asactuation 320B.Layer 320C may be referred to assecond contact 320C. Inaction 220, a suitable technique to remove portions oflayer 320 includes: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface oflayer 320 that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF4 or C2F6), or a combination of nitric acid with sulfuric acid to remove portions oflayer 320 that are not covered by photoresist; and (3) removing photoresist by using a resist stripper solvent. -
Action 230 may include providing and shaping a catalyst layer.FIG. 3C depicts in cross section an example structure that may result fromaction 230.Catalyst layer 325 may increase adhesion of a protective layer as well increase mechanical strength and also reduce contact resistance of the protective layer. Suitable materials of the catalyst layer include: cobalt, iron, nickel, molybdenum or any metal. A suitable technique to provide the catalyst layer includes sputtering, evaporation, or any method to deposit thin metal film. A suitable technique to remove portions of the catalyst layer to formcatalyst layer 325 includes: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface of the catalyst layer that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF4 or C2F6), or a combination of nitric acid with sulfuric acid to remove portions of the catalyst layer that are not covered by photoresist; and (3) removing photoresist by using a resist stripper solvent. A suitable thickness ofcatalyst layer 325 may be 1 to 100 nm (from contact withsecond contact 320C). -
Action 240 may include providing and shaping a sacrificial layer.FIG. 3D depicts in cross section an example structure that may result fromaction 240. Suitable materials of a sacrificial layer include SiO2, polymer, glass-based materials, and/or metals (e.g., copper). Suitable techniques to provide the sacrificial layer include (1) sputtering, chemical vapor deposition (CVD), spin coating, or physical vapor deposition followed by (2) polishing a surface of the sacrificial layer using, e.g., chemical mechanical polish (CMP). Suitable techniques to shape the sacrificial layer to formsacrificial layer 330 include: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface of the sacrificial layer that are not to be removed; (2) providing an HF solution to remove exposed portions of the sacrificial layer; and (3) removing photoresist by using a resist stripper solvent. -
Action 250 may include providing and shaping a beam.FIG. 3E depicts in cross section an example structure that may result fromaction 250. A suitable material of the beam includes gold and/ or aluminum. The beam may be the same material but does not have to be the same material as that ofsecond contact 320C. A suitable technique to provide the beam includes sputter deposition or physical vapor deposition. A suitable technique to remove portions of the beam to formbeam 335 includes: (1) applying photolithography using a mask and photoresist to cover the exposed surface of the beam that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF4 or C2F6) or a combination of nitric acid with sulfuric acid; and (3) removing photoresist by using a resist stripper solvent. -
Action 260 may include removingsacrificial layer 330.FIG. 3F depicts in cross section an example structure that may result fromaction 260. A suitable technique to remove remainingsacrificial layer 330 includes submerging the structure depicted inFIG. 3E into an HF solution. -
Action 270 may include providingprotection layer 340 overcatalyst layer 325.FIG. 3G depicts in cross section an example structure that may result fromaction 270. In one implementation,protection layer 340 includes an array of adjacent and potentially contacting carbon nanotubes. For example,FIG. 3H depicts an array ofadjacent carbon nanotubes 341 bonded tocatalyst layer 325, although an array ofadjacent carbon nanotubes 341 may be bonded to other surfaces. Each nanotube may have a very small diameter (e.g., 1 to 100 nm).Action 270 may include utilizing a CVD chamber to provide methane, ethylene, or carbon monoxide gas and heating the chamber to form carbon over thecatalyst layer 325. A thickness ofprotection layer 340 may be based on time that gas flows over thecatalyst layer 325. In one implementation,catalyst layer 325 may prevent reaction of thesecond contact 320C with reactive gases and improve the efficiency of metal catalysts that are applied during growth ofprotection layer 340. - In one embodiment of
process 200, acatalyst layer 325 is not provided and instead,action 270 includes providingprotection layer 342 overlayer 320C (hereafter action 270A).Protection layer 342 includes an array of adjacent and potentially contacting carbon nanotubes.FIG. 3I depicts in cross section an example structure that may result from action 270A. In this embodiment, a bonding material such as thiol can be used tobond protection layer 342 to layer 320C. The bonding material may provide electrical signal conductance between theprotection layer 342 andlayer 320C. -
FIG. 4 depicts a process that can be used in action 270A to provideprotection layer 342 oversecond contact 320C. Inaction 410, carbon nanotubes may be covered with a protective film such as photoresist over portions that are not to be bonded withsecond contact 320C. Inaction 420, an adhesive such as thiol may be bonded to the portion of the carbon nanotubes that are to be bonded tosecond contact 320C. Inaction 430, carbon nanotubes with adhesive portions may be dispersed into a solvent. Inaction 440, carbon nanotubes may be bonded tosecond contact 320C by for example providing the solvent mixture with carbon nanotubes oversecond contact 320C. For example, a tip or side of each carbon nanotube may be bonded tosecond contact 320C. - Some embodiments of
process 200 may includeaction 280.Action 280 may include coating or partially coatingprotection layer second metal layer action 280 may include utilizing physical deposition or sputtering methods to providesecond metal layer second metal layer FIGS. 3J and 3K depict examples of switches with respectivesecond metal layer respective protection layers Second metal layers respective protection layers Second metal layer second metal layer - Second Structure
-
FIG. 6F depicts in cross section aswitch 700, in accordance with an embodiment of the present invention.Switch 700 may includebase 610,arm 650,second contact 620C, andactuation 620B.Base 610 may supportactuation 620B,second contact 620C, andarm 650. When a voltage is applied betweenactuation 620B andarm 650,arm 650 may lower to electrically contactsecond contact 620 C using surface 675. In accordance with an embodiment of the present invention,arm 650 may have a durableprotective coating layer 660 that may protectarm 650 from wear. When the voltage betweenactuation 620B andarm 650 is removed,arm 650 may restore to its original shape.Protective coating layer 660 may include an array of densely packed multi-walled or single-walled carbon protections. - An array of carbon nanotubes may conduct a very high density of current with low resistance. Carbon nanotubes may also provide mechanical properties of high flexibility, strength, and resilience. Carbon nanotubes may provide electrical conductivity even when elastically deformed. Each nanotube may have a very small diameter (e.g., 1 to 100 nm). An array of nanotubes may provide electrical contact with non-flat surfaces by a large number of contact points. Furthermore, nanotubes may penetrate any contamination layer on the contact surface thus increasing the reliability of electrical conductivity with the contact.
- Process to Make Structure
- In accordance with an embodiment of the present invention,
FIG. 5 depicts one possible process that may be used to construct switches.Action 510 includes providing and shaping a metal layer over a silicon surface.FIG. 6A depicts in cross section an example structure that may result fromaction 510. A suitable implementation ofsilicon surface 610 is a silicon wafer. Suitable materials of layer 620 include silver, gold, and/ or aluminum. A suitable technique to provide metal layer 620 includes sputter deposition or physical vapor deposition. Shaping the metal layer 620 may also include removing portions of layer 620 to formlayers layer 620B may otherwise be referred to asactuation 620B whereaslayer 620C may otherwise be referred to assecond contact 620C. -
Action 520 includes providing and shaping a sacrificial layer.FIG. 6B depicts in cross section an example structure that may result fromaction 520. Suitable materials of the sacrificial layer include SiO2, polymer, glass-based materials, and/or metals (e.g., copper). Suitable techniques to provide the sacrificial layer include (1) sputtering, chemical vapor deposition (CVD), or physical vapor deposition followed by (2) polishing a surface of the sacrificial layer using, e.g., chemical mechanical polishing (CMP). Regions to form a portion of an arm and a catalyst region may be removed from the sacrificial layer. Suitable techniques to shape the sacrificial layer includes: (1) applying photolithography using a mask and photoresist to cover the exposed surface of the sacrificial layer that is not to be removed; (2) providing an HF solution to remove exposed portions of the sacrificial layer; and (3) removing photoresist by using a resist stripper solvent. The depth of removal of sacrificial layer can be controlled by the HF etching speed and etching time. -
Action 530 includes forming a catalyst layer in a portion of the sacrificial layer.FIG. 6C depicts in cross section an example structure that may result fromaction 530.Catalyst layer 640 may increase adhesion of a protective layer formed over the catalyst layer as well as increase mechanical strength and reduce contact resistance of the protective layer. Suitable materials ofcatalyst layer 640 include cobalt, iron, nickel, molybdenum or any metal. A suitable technique to providecatalyst layer 640 includes sputtering, evaporation, or any method to deposit thin metal film over the relevant portion of the sacrificial layer. A suitable thickness ofcatalyst layer 640 may be 1 to 100 nm (from contact with arm 650). A suitable technique to remove portions of the catalyst layer to formcatalyst layer 640 includes: (1) applying photolithography using a mask and photoresist to cover the portions of the exposed surface of the catalyst layer that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF4 or C2F6), or a combination of nitric acid with sulfuric acid to remove portions of the catalyst layer that are not covered by photoresist; and (3) removing photoresist by using a resist stripper solvent. Another suitable technique to remove portions of the catalyst layer to formcatalyst layer 640 includes polishing a surface ofcatalyst layer 640 and sacrificial layer using, e.g., chemical mechanical polishing (CMP). -
Action 540 may include providing and shaping a beam.FIG. 6D depicts in cross section an example structure that may result fromaction 540. A suitable material of the beam includes gold and/or aluminum. The beam may be the same material but does not have to be the same material as that of metal layer 620. A suitable technique to provide the beam includes sputter deposition or physical vapor deposition. A suitable technique to shape the beam includes: (1) applying photolithography using a mask and photoresist to cover the exposed surface of the beam that are not to be removed; (2) using fluorinated hydrocarbons (e.g., CF4 or C2F6), or a combination of nitric acid with sulfuric acid; and (3) removing photoresist by using a resist stripper solvent. -
Action 550 may include removingsacrificial layer 630. A suitable technique to removesacrificial layer 630 includes submerging the structure depicted inFIG. 6D into an HF solution. -
Action 560 may include providingprotection layer 660 overcatalyst layer 640.FIG. 6F depicts in cross section an example structure that may result fromaction 560. In one implementation,protection layer 660 includes an array of adjacent and potentially contacting carbon nanotubes. For example, the array of carbon nanotubes may be similar to those described with respect toFIG. 3H . Each nanotube may have a very small diameter (e.g., 1 to 100 nm).Action 560 may include utilizing a CVD chamber to provide methane, ethylene, or carbon monoxide gas and heating the chamber to form carbon overcatalyst layer 640. A thickness ofprotection layer 660 may be based on time that gas flows over thecatalyst layer 640. In one implementation,catalyst layer 640 may prevent reaction ofarm 650 with reactive gases and improve the efficiency of metal catalysts that are applied during growth ofprotection layer 660. - In one embodiment of
process 500,catalyst layer 640 is not provided and instead,action 560 includes providingprotection layer 645 onto arm 650 (hereafter action 560A) and oppositesecond contact 620C.FIG. 6G depicts in cross section an example structure that may result from action 560A. In this embodiment, a bonding material such as thiol can be used tobond protection layer 645 toarm 650. The bonding material may provide electrical signal conductance betweenprotection layer 645 andarm 650. A process similar to that described with respect toFIG. 4 may be used to provideprotection layer 645 overarm 650. - Some embodiments of
process 500 may includeaction 570.Action 570 may include coating or partially coatingprotection layer second metal layer action 570 may include utilizing simple physical deposition or sputtering methods to providesecond metal layer second metal layer FIGS. 6H and 6I depict examples of switches withsecond metal layers respective protection layers Second metal layers protection layers second contact 620C).Second metal layers - Modifications
- The drawings and the forgoing description gave examples of the present invention. The scope of the present invention, however, is by no means limited by these specific examples. Numerous variations, whether explicitly given in the specification or not, such as differences in structure, dimension, and use of material, are possible. The scope of the invention is at least as broad as given by the following claims.
Claims (44)
1-8. (canceled)
9. A method comprising:
forming a conductive contact region over a portion of a base structure;
forming an actuation region over a portion of the base structure;
forming a protective coating over a portion of the contact region, wherein the protective coating includes carbon nanotubes; and
forming an arm structure over a portion of the base structure, wherein a portion of the arm structure opposes the protective coating.
10. The method of claim 9 , further comprising forming an intermediate layer between the protective coating and the contact region.
11. The method of claim 10 , wherein the intermediate layer comprises a catalyst layer.
12-15. (canceled)
16. The method of claim 9 , wherein the forming the protective coating comprises:
providing an adhesive to portions of carbon nanotubes; and
providing a solution including the carbon nanotubes with adhesive portions over the conductive contact region.
17. The method of claim 16 , wherein the adhesive comprises thiol.
18. The method of claim 9 , further comprising providing a conductive coating over a portion of the protective coating.
19. The method of claim 10 , further comprising providing a conductive coating over a portion of the protective coating.
20-27. (canceled)
28. A method comprising:
forming a conductive contact region over a portion of a base structure;
forming an actuation region over a portion of the base structure;
forming an arm structure over-a portion of the base structure; and
forming a protective coating over a portion of the arm structure and opposite the conductive contact region, wherein the protective coating includes carbon nanotubes.
29. The method of claim 28 , further comprising forming an intermediate layer between the protective coating and the arm structure.
30. The method of claim 29 , wherein the intermediate layer comprises a catalyst layer.
31-34. (canceled)
35. The method of claim 29 , further comprising providing a conductive coating over a portion of the protective coating opposite the conductive contact region.
36. The method of claim 28 , wherein the forming the protective coating comprises:
providing an adhesive to portions of carbon nanotubes; and
providing a solution including the carbon nanotubes with adhesive portions over a portion of the arm structure.
37. The method of claim 36 , wherein the adhesive comprises thiol.
38. The method of claim 28 , further comprising providing a conductive coating over a portion of the protective coating and opposite the conductive contact region.
39. The method of claim 9 , wherein each of the carbon nanotubes has a diameter in a range of approximately 1 nm to 100 nm.
40. The method of claim 9 , wherein tips of nanotubes are bonded to the portion of the contact region.
41. The method of claim 9 , wherein the protective coating comprises an array of closely spaced nanotubes.
42. The method of claim 28 , wherein each of the carbon nanotubes has a diameter in a range of approximately 1 nm to 100 nm.
43. The method of claim 28 , wherein tips of nanotubes are bonded to the portion of the arm structure.
44. The method of claim 28 , wherein the protective coating comprises an array of closely spaced nanotubes.
45. A method comprising:
forming a conductive contact region over a portion of a base structure;
forming an actuation region over a portion of the base structure;
forming an intermediate layer over a portion of the contact region;
forming a protective coating over a portion of the intermediate layer, wherein the protective coating includes carbon nanotubes; and
forming an arm structure over a portion of the base structure, wherein a portion of the arm structure opposes the protective coating.
46. The method of claim 45 , wherein the intermediate layer comprises a catalyst layer.
47. The method of claim 45 , wherein the forming the protective coating comprises:
utilizing a chemical vapor deposition chamber to provide a carbon-based gas over the intermediate layer.
48. The method of claim 47 , wherein the carbon-based gas comprises methane.
49. The method of claim 47 , wherein the carbon-based gas comprises ethylene.
50. The method of claim 47 , wherein the carbon-based gas comprises carbon monoxide gas.
51. The method of claim 45 , further comprising providing a conductive coating over a portion of the protective coating.
52. The method of claim 45 , wherein each of the carbon nanotubes has a diameter in a range of approximately 1 nm to 100 nm.
53. The method of claim 45 , wherein tips of nanotubes are bonded to a portion of the intermediate layer.
54. The method of claim 45 , wherein the protective coating comprises an array of closely spaced nanotubes.
55. A method comprising:
forming a conductive contact region over a portion of a base structure;
forming an actuation region over a portion of the base structure;
forming an arm structure over a portion of the base structure; and
forming an intermediate layer over a portion of the arm structure and opposite the conductive contact region;
forming a protective coating over a portion of the intermediate layer and opposite the conductive contact region, wherein the protective coating includes carbon nanotubes.
56. The method of claim 55 , wherein the intermediate layer comprises a catalyst layer.
57. The method of claim 55 , wherein the forming the protective coating comprises:
utilizing a chemical vapor deposition chamber to provide a carbon-based gas over the intermediate layer.
58. The method of claim 57 , wherein the carbon-based gas comprises methane.
59. The method of claim 57 , wherein the carbon-based gas comprises ethylene.
60. The method of claim 57 , wherein the carbon-based gas comprises carbon monoxide gas.
61. The method of claim 55 , further comprising providing a conductive coating over a portion of the protective coating.
62. The method of claim 55 , wherein each of the carbon nanotubes has a diameter in a range of approximately 1 nm to 100 nm.
63. The method of claim 55 , wherein tips of nanotubes are bonded to a portion of the intermediate layer.
64. The method of claim 55 , wherein the protective coating comprises an array of closely spaced nanotubes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/898,428 US20050130339A1 (en) | 2003-12-16 | 2004-07-22 | Protected switch and techniques to manufacture the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/738,200 US6825428B1 (en) | 2003-12-16 | 2003-12-16 | Protected switch and techniques to manufacture the same |
US10/898,428 US20050130339A1 (en) | 2003-12-16 | 2004-07-22 | Protected switch and techniques to manufacture the same |
Related Parent Applications (1)
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US10/738,200 Division US6825428B1 (en) | 2003-12-16 | 2003-12-16 | Protected switch and techniques to manufacture the same |
Publications (1)
Publication Number | Publication Date |
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US20050130339A1 true US20050130339A1 (en) | 2005-06-16 |
Family
ID=33452863
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US10/738,200 Expired - Fee Related US6825428B1 (en) | 2003-12-16 | 2003-12-16 | Protected switch and techniques to manufacture the same |
US10/897,667 Expired - Fee Related US6936780B2 (en) | 2003-12-16 | 2004-07-22 | Protected switch and techniques to manufacture the same |
US10/898,428 Abandoned US20050130339A1 (en) | 2003-12-16 | 2004-07-22 | Protected switch and techniques to manufacture the same |
US11/069,410 Expired - Fee Related US7026562B2 (en) | 2003-12-16 | 2005-02-28 | Protected switch and techniques to manufacture the same |
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US10/738,200 Expired - Fee Related US6825428B1 (en) | 2003-12-16 | 2003-12-16 | Protected switch and techniques to manufacture the same |
US10/897,667 Expired - Fee Related US6936780B2 (en) | 2003-12-16 | 2004-07-22 | Protected switch and techniques to manufacture the same |
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US11/069,410 Expired - Fee Related US7026562B2 (en) | 2003-12-16 | 2005-02-28 | Protected switch and techniques to manufacture the same |
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US7355258B2 (en) * | 2005-08-02 | 2008-04-08 | President And Fellows Of Harvard College | Method and apparatus for bending electrostatic switch |
US8217518B2 (en) * | 2006-03-08 | 2012-07-10 | Stmicroelectronics Asia Pacific Pte., Ltd. | Enhancing metal/low-K interconnect reliability using a protection layer |
KR100840644B1 (en) * | 2006-12-29 | 2008-06-24 | 동부일렉트로닉스 주식회사 | Switching device and method of fabricating the same |
US8604898B2 (en) | 2009-04-20 | 2013-12-10 | International Business Machines Corporation | Vertical integrated circuit switches, design structure and methods of fabricating same |
DE102014006033A1 (en) * | 2014-02-15 | 2015-08-20 | Johnson Electric Germany GmbH & Co. KG | An electrical microswitch comprising at least one electrical contact and method of manufacturing an electrical microswitch |
CN104576126A (en) * | 2015-01-22 | 2015-04-29 | 清华大学 | Carbon nano-tube MEMS switch and manufacturing method thereof |
US11609130B2 (en) * | 2021-01-19 | 2023-03-21 | Uneo Inc. | Cantilever force sensor |
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Also Published As
Publication number | Publication date |
---|---|
US6825428B1 (en) | 2004-11-30 |
US20050126898A1 (en) | 2005-06-16 |
US6936780B2 (en) | 2005-08-30 |
US20050151170A1 (en) | 2005-07-14 |
US7026562B2 (en) | 2006-04-11 |
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