US20050136185A1 - Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application - Google Patents
Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application Download PDFInfo
- Publication number
- US20050136185A1 US20050136185A1 US10/979,078 US97907804A US2005136185A1 US 20050136185 A1 US20050136185 A1 US 20050136185A1 US 97907804 A US97907804 A US 97907804A US 2005136185 A1 US2005136185 A1 US 2005136185A1
- Authority
- US
- United States
- Prior art keywords
- substrate surface
- cobalt
- solution
- layer
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 33
- 239000010949 copper Substances 0.000 title claims description 29
- 229910052802 copper Inorganic materials 0.000 title claims description 27
- 239000010941 cobalt Substances 0.000 title claims description 26
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 title claims description 26
- 229910017052 cobalt Inorganic materials 0.000 title claims description 25
- 230000008021 deposition Effects 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 238000000034 method Methods 0.000 claims abstract description 66
- 239000000243 solution Substances 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 51
- 230000000977 initiatory effect Effects 0.000 claims abstract description 35
- 238000004140 cleaning Methods 0.000 claims abstract description 30
- 239000003929 acidic solution Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 38
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 36
- 229910000085 borane Inorganic materials 0.000 claims description 21
- 239000003638 chemical reducing agent Substances 0.000 claims description 20
- 229910000531 Co alloy Inorganic materials 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- 229910000510 noble metal Inorganic materials 0.000 claims description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 14
- 229910017604 nitric acid Inorganic materials 0.000 claims description 14
- 150000003839 salts Chemical class 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 5
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 2
- 238000002161 passivation Methods 0.000 abstract description 24
- 238000009713 electroplating Methods 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 12
- 239000002253 acid Substances 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 239000000356 contaminant Substances 0.000 description 9
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000003197 catalytic effect Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- JPNWDVUTVSTKMV-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[W] JPNWDVUTVSTKMV-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001509 sodium citrate Substances 0.000 description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 4
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- CPJYFACXEHYLFS-UHFFFAOYSA-N [B].[W].[Co] Chemical compound [B].[W].[Co] CPJYFACXEHYLFS-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- -1 alkyl amine boranes Chemical class 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 3
- 229940044175 cobalt sulfate Drugs 0.000 description 3
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000012279 sodium borohydride Substances 0.000 description 3
- 229910000033 sodium borohydride Inorganic materials 0.000 description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- WVMHLYQJPRXKLC-UHFFFAOYSA-N borane;n,n-dimethylmethanamine Chemical compound B.CN(C)C WVMHLYQJPRXKLC-UHFFFAOYSA-N 0.000 description 2
- HZEIHKAVLOJHDG-UHFFFAOYSA-N boranylidynecobalt Chemical compound [Co]#B HZEIHKAVLOJHDG-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- WDHWFGNRFMPTQS-UHFFFAOYSA-N cobalt tin Chemical compound [Co].[Sn] WDHWFGNRFMPTQS-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical class NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical class [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 2
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910021503 Cobalt(II) hydroxide Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000393496 Electra Species 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- ZMMUSLWEDSQDJY-UHFFFAOYSA-N [B].[Sn].[Co] Chemical compound [B].[Sn].[Co] ZMMUSLWEDSQDJY-UHFFFAOYSA-N 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical group [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- RFLFDJSIZCCYIP-UHFFFAOYSA-L palladium(2+);sulfate Chemical compound [Pd+2].[O-]S([O-])(=O)=O RFLFDJSIZCCYIP-UHFFFAOYSA-L 0.000 description 1
- SIBIBHIFKSKVRR-UHFFFAOYSA-N phosphanylidynecobalt Chemical compound [Co]#P SIBIBHIFKSKVRR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229940074404 sodium succinate Drugs 0.000 description 1
- ZDQYSKICYIVCPN-UHFFFAOYSA-L sodium succinate (anhydrous) Chemical compound [Na+].[Na+].[O-]C(=O)CCC([O-])=O ZDQYSKICYIVCPN-UHFFFAOYSA-L 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 125000005402 stannate group Chemical group 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1834—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
Definitions
- Embodiments of the invention relate to a method for manufacturing integrated circuit devices. More particularly, embodiments of the invention relate to a method for forming metal interconnects.
- Sub-quarter micron multilevel metallization is one of the key technologies for the next generation of very large scale integration (VLSI).
- VLSI very large scale integration
- the multilevel interconnects that lie at the heart of this technology possess high aspect ratio features, including contacts, vias, lines, or other apertures. Reliable formation of these features is very important to the success of VLSI and to the continued effort to increase quality and circuit density on individual substrates. Therefore, there is a great amount of ongoing effort being directed to the formation of void-free features having high aspect ratios (height:width) of 4 : 1 or greater.
- native oxides and other contaminants within a feature causes problems during fabrication. For example, the presence of native oxides and other contaminants within a feature creates voids by promoting uneven distribution of a depositing layer. The presence of native oxides and other contaminants can also reduce the electromigration resistance of vias and small features. Further, the presence of native oxides and other contaminants can diffuse into the dielectric layer, the sublayer, or the depositing layer and alter the performance of the device.
- native oxides are formed when a substrate surface having a nonconductive layer (silicon, silicon oxide) or a conductive layer (aluminum, tungsten, titanium, tantalum, tungsten, copper) disposed thereon, is exposed to oxygen in the atmosphere or is damaged in a plasma etch step.
- the “other contaminants” may be generated from sputtered material from an oxide over-etch, residual photoresist from a stripping process, leftover polymer from a previous oxide etch step, or redeposited material from a pre-clean sputter etch process, for example.
- a typical process for forming an interconnect on a substrate includes depositing one or more layers, etching at least one of the layer(s) to form one or more features, depositing a barrier layer in the feature(s) and depositing one or more layers to fill the feature.
- Copper and its alloys have become the metals of choice for filling sub-micron interconnect technology because copper has a lower resistivity than aluminum, (1.7 ⁇ -cm compared to 3.1 ⁇ -cm for aluminum), a higher current carrying capacity, and a significantly higher electromigration resistance. Copper also has good thermal conductivity and is available in a highly pure state.
- Copper readily forms oxides when exposed to atmospheric conditions. Copper oxides increase the resistance of metal layers, become a source of particle problems, and reduce the reliability of the overall circuit. Copper oxides may also interfere with subsequent deposition processes.
- a passivation layer isolates copper surfaces from ambient oxygen.
- Cobalt and cobalt alloys have been observed as suitable materials for passivating copper and may be deposited on copper by electroless deposition techniques. However, copper does not satisfactorily catalyze or initiate deposition of cobalt and cobalt alloys from electroless solutions.
- a common approach has been to activate the copper surface by first depositing a catalytic material on the copper surface.
- the deposition of the catalytic material typically requires multiple, time consuming steps and, most times, the use of catalytic colloid compounds.
- Catalytic colloid compounds can adhere to dielectric materials and produce undesired, excessive, and non-selective deposition of passivating material on the substrate surface.
- Non-selective deposition of passivating material such as deposition on dielectric materials, may lead to surface contamination, unwanted diffusion of conductive materials into dielectric materials, and even device failure from short circuits and other device irregularities.
- Embodiments of the invention provide a method for depositing a passivation layer on a substrate surface using one or more electroplating techniques.
- the method includes selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution.
- the method includes polishing a substrate surface to expose a conductive material disposed in a dielectric material, exposing the substrate surface to a first acidic solution, selectively depositing an initiation layer on the conductive material by exposing the substrate surface to a first electroless solution, electrolessly depositing a passivating material comprising cobalt or a cobalt alloy on the initiation layer, and cleaning the substrate surface with a second acidic solution.
- the method includes cleaning a substrate surface with a first acidic solution, selectively depositing a noble metal selected from the group of palladium, platinum, alloys thereof, and combinations thereof on the substrate surface by exposing the substrate surface to an acidic electroless solution containing a noble metal salt and an inorganic acid, electrolessly depositing cobalt or a cobalt alloy on the noble metal, cleaning the substrate surface with a second acidic solution, and applying ultrasonic or megasonic energy to the substrate surface while cleaning the substrate surface with the second acidic solution.
- a noble metal selected from the group of palladium, platinum, alloys thereof, and combinations thereof
- FIG. 1 illustrates an exemplary processing sequence according to embodiments of the invention described herein.
- FIG. 2 illustrates an alternative processing sequence according to embodiments of the invention described herein.
- FIGS. 3A-3G are simplified, schematic sectional views of an exemplary wafer at different stages of an interconnect fabrication sequence according to embodiments.
- FIG. 1 illustrates an exemplary processing sequence 100 according to embodiments of the invention.
- a substrate surface having one or more conductive materials at least partially formed thereon such as copper for example, is pre-rinsed/treated to remove metal oxides or other contaminants from the substrate surface.
- “Substrate surface” as used herein refers to a layer of material that serves as a basis for subsequent processing operations.
- a substrate surface may contain one or more conductive metals, such as aluminum, copper, tungsten, or combinations thereof, for example, and may form part of an interconnect feature such as a plug, via, contact, line, wire, and may also form part of a metal gate electrode.
- a substrate surface may also contain one or more nonconductive materials, such as silicon, doped silicon, germanium, gallium arsenide, glass, and sapphire, for example.
- the pre-rinse/treatment process utilizes an acidic solution to remove/etch a top portion of the substrate surface, such as between about 10 ⁇ and about 50 ⁇ , which may have contaminating materials from a prior processing step.
- a prior processing step may be a planarizing process, for example.
- the acidic solution may contain an inorganic acid solution.
- the acidic solution may contain between about 0.2 weight percent (wt %) to about 5 wt % of hydrofluoric acid (HF), such as about 0.5 wt %.
- HF hydrofluoric acid
- the acidic solution may also contain nitric acid having a concentration between about 1 M and about 5 M.
- the acidic solution may be a mixture of sulfuric acid having a concentration between about 0.5 percent by volume (vol %) and about 10 vol %, such as between about 1 vol % and about 5 vol %, and hydrogen peroxide having a concentration between about 5 vol % and about 40 vol %, such as about 20 vol %.
- the pre-rinse solution is generally applied to the substrate surface at a rate between about 50 mUmin and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min.
- the pre-rinse solution is typically applied for about 5 seconds to about 300 seconds, such as between about 30 seconds and about 60 seconds at a temperature between about 15° C. and about 60° C.
- the pre-rinse solution may be applied in the same processing chamber or processing cell as any of the subsequent deposition processes.
- a rinsing agent such as deionized water for example, is then applied to the substrate surface to remove any remaining pre-rinse solution, any etched materials and particles, and any by-products that may have formed during the pre-rinse (step 110 ).
- the rinsing agent is generally applied to the substrate surface at a flow rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min.
- the rinsing agent is typically applied for about 5 seconds to about 300 seconds, such as between about 30 seconds and about 60 seconds at a temperature between about 15° C. and about 80° C.
- the rinsing agent may be applied by a spraying method as well as by any other method used for cleaning a substrate, such as by rinsing in an enclosure containing a cleaning solution or bath.
- an initiation layer is deposited on the substrate surface, as shown at step 120 .
- the initiation layer is formed on the substrate surface by selectively depositing a noble metal, such as palladium, on the exposed conductive materials of the substrate surface (step 122 ).
- the initiation layer is formed on the substrate surface by exposing/rinsing the substrate surface with one or more boron-based reducing agents (step 124 ).
- the initiation layer may be formed on the conductive portions of the substrate surface by electrolessly depositing one or more noble metals thereon.
- the electroless solution generally provides for the deposition of a noble metal to a thickness of about 50 ⁇ or less, such as about 10 ⁇ or less.
- the noble metal may be palladium, platinum, gold, silver, iridium, rhenium, rhodium, ruthenium, osmium, or any combination thereof.
- the noble metal is palladium or platinum.
- the initiation layer is deposited from an electroless solution containing at least one noble metal salt and at least one acid (step 122 ).
- a concentration of the noble metal salt within the electroless solution should be between about 20 parts per million (ppm) and about 20 grams per liter (g/L), such as between about 80 ppm and about 300 ppm.
- Exemplary noble metal salts include palladium chloride (PdCl 2 ), palladium sulfate (PdSO 4 ), palladium ammonium chloride, and combinations thereof.
- the acid may be one or more inorganic acids, such as hydrochloric acid (HCl), sulfuric acid (H 2 SO 4 ), hydrofluoric acid (HF), and combinations thereof, for example.
- the acid may be one or more organic acids, such as a carboxylic acid, including acetic acid (CH 3 COOH), for example.
- a sufficient amount of acid is included to provide an electroless solution having a pH of about 7 or less.
- the pH of the electroless solution is between about 1 and about 3.
- the electroless solution for forming the initiation layer is generally applied to the substrate surface at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min.
- the electroless solution is typically applied for about 1 second to about 300 seconds, such as between about 5 seconds and about 60 seconds, at a temperature between about 15° C. and about 80° C.
- the initiation layer is formed by rinsing or exposing the substrate surface to a borane-containing composition (step 124 ).
- the borane-containing composition forms a metal boride layer selectively on the exposed conductive metals and becomes a catalytic site for subsequent electroless deposition processes.
- the borane-containing composition contains one or more boron-based reducing agents, such as sodium borohydride, dimethylamine borane (DMAB), trimethylamine borane, and combinations thereof. Any alkali metal borohydrides and alkyl amine boranes may also be used.
- the borane-containing composition has a boron reducing agent concentration of about 0.25 grams per liter (g/L) to about 6 g/L, such as between about 2 g/L and about 4 g/L.
- the borane-containing composition may additionally include one or more pH adjusting agents to adjust a pH of the composition to between about 8 and about 13. Suitable pH adjusting agents include potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonium hydroxide, ammonium hydroxide derivatives, such as tetramethyl ammonium hydroxide, and combinations thereof.
- the underlying conductive material is exposed to the borane-containing composition for about 30 seconds to about 180 seconds at a temperature between about 15° C. and about 80° C.
- the borane-containing composition may be applied at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min.
- the borane-containing composition may include about 4 g/L of dimethylamine borane (DMAB) and a sufficient amount of sodium hydroxide to provide a pH of about 9.
- DMAB dimethylamine borane
- a rinsing agent such as deionized water, for example, is applied to the substrate surface to remove any solution used in forming the initiation layer.
- the rinsing agent is generally applied to the substrate surface at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min.
- the rinsing agent is applied for about 5 seconds to about 300 seconds, such as between about 30 seconds and about 60 seconds, at a temperature between about 15° C. and about 80° C.
- the rinsing agent may be applied by a spraying method as well as by any other method for cleaning a substrate, such as by rinsing in an enclosure containing a cleaning solution or bath.
- a passivation layer is next deposited on the exposed initiation layer by a selective electroless deposition process in step 130 .
- the passivation layer includes cobalt or a cobalt alloy.
- useful cobalt alloys include cobalt-tungsten alloys, cobalt-phosphorus alloys, cobalt-tin alloys, cobalt-boron alloys, and ternary alloys, such as cobalt-tungsten-phosphorus and cobalt-tungsten-boron.
- the passivation layer may also include other metals and metal alloys, such as nickel, tin, titanium, tantalum, tungsten, molybdenum, platinum, iron, niobium, palladium, nickel cobalt alloys, doped cobalt, doped nickel alloys, nickel iron alloys, and combinations thereof.
- the passivation layer may be deposited to have a thickness of about 500 ⁇ or less, such as between about 300 ⁇ and about 500 ⁇ .
- the passivation layer isolates and protects an underlying metal layer from exposure to oxygen, for example. Accordingly, the passivation layer prevents the formation of metal oxides.
- Cobalt alloys such as cobalt-tungsten
- Cobalt-tungsten may be deposited by adding tungstic acid or tungstate salts, such as sodium tungstate, ammonium tungstate, and combinations thereof.
- Phosphorus for the cobalt-tungsten-phosphorus deposition may be obtained by using phosphorus-containing reducing agents, such as hypophosphite.
- Cobalt alloys, such as cobalt-tin may be deposited by adding stannate salts including stannic sulfate, stannic chloride, and combinations thereof.
- the metals salts may be in the electroless solution at a concentration between about 0.5 g/L and about 30 g/L, such as between about 2.5 g/L and about 25 g/L.
- the passivation layer (step 130 ) is deposited from a metallic electroless solution containing at least one metal salt and at least one reducing agent.
- Suitable metal salts include chlorides, sulfates, sulfamates, or combinations thereof.
- One example of a metal salt is cobalt chloride.
- the metal salt may be in the electroless solution at a concentration between about 0.5 g/L and about 30 g/L, such as between about 2.5 g/L and about 25 g/L.
- Suitable reducing agents include sodium hypophosphite, hydrazine, formaldehyde, and combinations thereof.
- the reducing agents may also include borane-containing reducing agents, such as dimethylamine borane and sodium borohydride.
- the reducing agents have a concentration between about 1 g/L and about 30 g/L of the electroless solution.
- hypophosphite may be added to the electroless solution at a concentration between about 15 g/L and about 30 g/L of the electroless composition.
- the electroless solution may further include between about 0.01 g/L and about 50 g/L of one or more additives to improve deposition of the metal.
- Additives may include surfactants (RE 610), complexing agents (carboxylic acids, such as sodium citrate and sodium succinate), pH adjusting agents (sodium hydroxide, potassium hydroxide), stabilizers (thiourea, glycolic acid), and combinations thereof.
- the metallic electroless solution is applied to the substrate surface at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min.
- the metallic electroless solution is applied for about 30 seconds to about 180 seconds, such as between about 60 seconds and about 120 seconds, at a temperature between about 60° C. and about 90° C.
- a cobalt electroless composition for forming the passivation layer may include about 20 g/L of cobalt sulfate, about 50 g/L of sodium citrate, about 20 g/L of sodium hypophosphite, and a sufficient amount of potassium hydroxide to provide a pH of between about 9 and about 11.
- This electroless composition may be applied to the substrate surface for about 120 seconds at a flow rate of about 750 mL/min and at a temperature of about 80° C.
- a cobalt-tungsten layer may be deposited by the addition of about 10 g/L of sodium tungstate.
- the substrate surface may be cleaned to remove unwanted portions of the passivating material (step 140 ).
- the substrate surface is rinsed with one or more oxidizing agents (step 142 ).
- ultrasonic or megasonic energy is applied to the substrate surface (step 144 ) during the rinse (step 142 ) to enhance removal of the unwanted materials.
- the post-deposition cleaning solution may include: (1) a solution of nitric acid and deionized water; (2) a mixture of nitric acid and hydrogen peroxide; (3) a mixture of sulfuric acid and hydrogen peroxide; (4) a mixture of hydrochloric acid and hydrogen peroxide; or (5) any combination thereof.
- the mixture of nitric acid and deionized water has an acid to water ratio between about 1:2 to about 3:1, such as about 1:1.
- the mixture of nitric acid and hydrogen peroxide has an acid to peroxide ratio between about 1:2 to about 3:1, such as about 2:1.
- the mixture of sulfuric acid and hydrogen peroxide has an acid to peroxide ratio between about 2:1 to about 4:1, such as about 3:1.
- the mixture of hydrochloric acid and hydrogen peroxide has an acid to peroxide ratio between about 2:1 to about 4:1, such as about 3:1.
- the hydrogen peroxide is an aqueous solution comprising between about 15% to about 40% hydrogen peroxide, such as 30% hydrogen peroxide.
- the cleaning solution is generally applied to the substrate surface at a rate between about 700 mL/min and about 900 mL/min, at a temperature between about 15° C. and about 35° C., and at a pressure between about 0.5 atm and about 3 atm.
- the post-deposition cleaning solutions are believed to clean free cobalt particles, remove cobalt oxide, and remove reaction by-products, such as Co(OH) 2 formed during deposition.
- the cleaning solution is also believed to remove a layer of cobalt material between about 1 ⁇ to about 400 ⁇ in thickness, such as between about 100 ⁇ and about 200 ⁇ , to remove any random growth or lateral growth of cobalt materials on the substrate surface and over the exposed conductive materials.
- the substrate can be transferred for additional processing, such as annealing or subsequent deposition processes.
- the cleaning step (step 140 ) may be enhanced using one or more sources of ultrasonic or megasonic energy applied to the substrate support pedestal or substrate surface (step 144 ).
- ultrasonic energy may be applied at a power between about 10 watts and about 250 watts, such as between about 10 watts and about 100 watts to the substrate support pedestal.
- the ultrasonic energy may have a frequency between about 25 kHz and about 200 kHz, preferably greater than about 40 kHz.
- the ultrasonic energy may be applied for between about 3 seconds and about 600 seconds, but longer time periods may be used depending upon the application. If two or more sources of ultrasonic energy are used, then simultaneous multiple frequencies may be used.
- FIG. 2 illustrates an alternative processing sequence in process 200 according to embodiments of the invention described herein.
- a substrate surface having one or more conductive materials at least partially formed thereon, such as copper, for example is pre-rinsed/treated to remove metal oxides or other contaminants from the substrate surface, in step 210 .
- a passivation layer is deposited on the substrate surface using an electroless solution containing at least one metal salt and at least one borane-containing reducing agent, in step 220 .
- the substrate surface is cleaned in step 230 , by rinsing with one or more oxidizing agents and/or applying ultrasonic energy during the rinse step.
- Step 220 forms a passivation layer on the substrate surface using a mixture of metal salt(s) and borane-reducing agent(s).
- Suitable metal salts include chlorides, sulfates, sulfamates, or combinations thereof.
- the metal salt may be in the electroless solution at a concentration between about 0.5 g/L and about 30 g/L, such as between about 2.5 g/L and about 25 g/L.
- Cobalt alloys such as cobalt-tungsten may be deposited by adding tungstic acid or tungstate salts, such as sodium tungstate, ammonium tungstate, and combinations thereof.
- Suitable borane-containing reducing agents include alkali metal borohydrides, such as sodium borohydride, alkyl amine boranes, such as dimethylamine borane (DMAB) and trimethylamine borane, and combinations thereof.
- the borane-containing reducing agent contains between about 0.25 g/L and about 6 g/L of the boron-containing composition, such as between about 2 g/L and about 4 g/L.
- the presence of the borane-containing reducing agents allow for the formation of cobalt-boron alloys, such as cobalt-tungsten-boron and cobalt-tin-boron among others.
- a cobalt electroless composition for forming the metal layer with a borane-containing reducing agent includes about 20 g/L of cobalt sulfate, about 50 g/L of sodium citrate, about 4 g/L of dimethylamine borane, and a sufficient amount of potassium hydroxide to provide a pH of between about 10 and about 12.
- This electroless composition may be applied to the substrate surface for about 120 seconds at a flow rate of about 750 mL/min and at a temperature of about 80° C.
- a cobalt-tungsten-boron layer may be deposited by the addition of about 10 g/L of sodium tungstate.
- the processing steps described above may be performed in an integrated processing platform, such as the ElectraTM ECP processing platform, which is commercially available from Applied Materials, Inc., located in Santa Clara, Calif.
- the Electra CuTM ECP platform generally includes one or more electroless deposition processing (EDP) cells, pre-deposition cells, post-deposition cells, such as spin-rinse-dry (SRD) cells, etch chambers, and anneal chambers.
- EDP electroless deposition processing
- pre-deposition cells pre-deposition cells
- post-deposition cells such as spin-rinse-dry (SRD) cells
- etch chambers such as etch chambers
- anneal chambers such as etch chambers, and anneal chambers.
- FIGS. 3A-3G are schematic representations of an exemplary interconnect structure 300 at different stages of fabrication in accordance with embodiments of the invention described herein.
- FIG. 3A shows an underlying substrate surface 310 having a dielectric layer 312 formed thereon.
- the dielectric layer 312 may be any dielectric material including a low k dielectric material (k ⁇ 4.0), whether presently known or yet to be discovered.
- the dielectric layer 312 may be fluorinated silicon glass (FSG), silicon dioxide, silicon carbide, or siloxy carbide deposited using conventional deposition techniques, such as physical vapor deposition and chemical vapor deposition.
- the dielectric layer 312 is etched to form a feature 314 therein using conventional and well-known techniques.
- the feature 314 may be a plug, via, contact, line, wire, or any other interconnect component.
- the feature 314 will be further described with reference to a via.
- the feature 314 has vertical sidewalls 316 and a floor 318 , having an aspect ratio of about 4:1 or greater, such as about 6:1.
- the floor 318 exposes at least a portion of the underlying substrate surface 310 .
- a wire definition may be etched with the via as is commonly known to form a dual damascene structure.
- FIG. 3B shows a barrier layer 330 at least partially deposited on the underlying metal layer 310 .
- the patterned or etched substrate dielectric layer 312 may be cleaned to remove native oxides or other contaminants from the surface thereof.
- reactive gases are excited into a plasma within a remote plasma source chamber such as a Reactive Pre-Clean chamber available from Applied Materials, Inc., located in Santa Clara, Calif.
- Pre-cleaning may also be done within a metal CVD or PVD chamber by connecting the remote plasma source thereto.
- metal deposition chambers having gas delivery systems could be modified to deliver the pre-cleaning gas plasma through existing gas inlets such as a gas distribution showerhead positioned above the substrate.
- the reactive pre-clean process forms radicals from a plasma of one or more reactive gases, such as argon, helium, hydrogen, nitrogen, fluorine-containing compounds, and combinations thereof.
- a reactive gas may include a mixture of tetrafluorocarbon (CF 4 ) and oxygen (O 2 ), or a mixture of helium (He) and nitrogen trifluoride (NF 3 ). More preferably, the reactive gas is a mixture of helium and nitrogen trifluoride.
- the plasma is typically generated by applying a power of about 500 watts to 2,000 watts RF at a frequency of about 200 kHz to 114 MHz.
- the flow of reactive gases ranges between about 100 sccm and about 1,000 sccm and the plasma treatment lasts for about 10 seconds to about 150 seconds.
- the plasma is generated in one or more treatment cycles and purged between cycles. For example, four treatment cycles lasting 35 seconds each is effective.
- the patterned or etched dielectric layer 312 may be pre-cleaned first using an argon plasma and then a hydrogen plasma.
- a processing gas having greater than about 50% argon by number of atoms is introduced at a pressure of about 0.8 mTorr.
- a plasma is struck to subject the dielectric layer 312 to an argon sputter cleaning environment.
- the argon plasma is preferably generated by applying between about 50 watts and about 500 watts of RF power.
- the argon plasma is maintained for between about 10 seconds and about 300 seconds to provide sufficient cleaning time for the deposits that are not readily removed by a reactive hydrogen plasma.
- the chamber pressure is increased to about 140 mTorr, and a processing gas consisting essentially of hydrogen and helium is introduced into the processing region.
- the processing gas comprises about 5% hydrogen and about 95% helium.
- the hydrogen plasma is generated by applying between about 50 watts and about 500 watts power. The hydrogen plasma is maintained for about 10 seconds to about 300 seconds.
- the barrier layer 330 is conformally deposited on the floor 318 as well as the side walls 316 of the feature 314 using conventional deposition techniques.
- the barrier layer 330 acts as a diffusion barrier to prevent inter-diffusion of a copper metal to be subsequently deposited into the via.
- the barrier layer 330 is a thin layer of a refractory metal having a thickness between about 10 ⁇ and about 1,000 ⁇ .
- the barrier layer 330 may include tungsten (W), tantalum (Ta), titanium (Ti), tantalum nitride (TaN), titanium nitride (TiN), or combinations thereof.
- the barrier layer contains tantalum nitride deposited to a thickness of about 20 ⁇ or less using atomic layer deposition or cyclical layer deposition techniques, such as the cyclical layer deposition process shown and described in co-pending U.S. patent application Ser. No. 10/199,415, filed on Jul. 18, 2002, entitled “Enhanced Copper Growth With Ultrathin Barrier Layer For High Performance Interconnects,” which is incorporated by reference herein.
- FIG. 3C shows a seed layer 340 at least partially deposited on the barrier layer 330 .
- the seed layer 340 is a copper or a copper alloy material, which may be deposited using physical vapor deposition, chemical vapor deposition, electroless plating, and electroplating techniques.
- the seed layer 340 is deposited using a high density plasma physical vapor deposition (HDP-PVD) process to enable good conformal coverage.
- HDP-PVD high density plasma physical vapor deposition
- One example of a HDP-PVD chamber is the Self-Ionized Plasma SIPTM chamber, available from Applied Materials, Inc. of Santa Clara, Calif.
- FIG. 3D shows a bulk metal layer 350 at least partially deposited on the seed layer 340 .
- the bulk metal layer 350 is deposited on the seed layer 340 to fill the via.
- the bulk metal layer 350 may be deposited using CVD, PVD, electroplating, or electroless techniques to a thickness between about 1,000 ⁇ and about 2,000 ⁇ .
- the bulk metal layer 350 may include aluminum, titanium, tungsten, copper, and combinations thereof.
- the bulk metal layer 350 contains copper deposited within an electroplating cell, such as the ElectraTM Cu ECP system, available from Applied Materials, Inc. of Santa Clara, Calif.
- the electroplating bath has a copper concentration greater than about 0.7 M, for example, a copper sulfate concentration of about 0.85 M, and a pH of about 1.75.
- the electroplating bath may also contain various additives as is well known in the art.
- the temperature of the bath is between about 15° C. and about 25° C.
- the bias is between about ⁇ 15 volts to about 15 volts. In one aspect, the positive bias ranges from about 0.1 volts to about 10 volts and the negative bias ranges from about ⁇ 0.1 volts to about ⁇ 10 volts.
- an anneal treatment may be performed following the metal layer 350 deposition whereby the wafer is subjected to a temperature between about 100° C. and about 400° C. for about 10 minutes to about 1 hour, preferably about 30 minutes.
- a carrier/purge gas such as helium, hydrogen, nitrogen, or a mixture thereof is introduced at a rate of about 100 sccm to about 10,000 sccm.
- the chamber pressure is maintained between about 2 Torr and about 10 Torr.
- the RF power is about 200 watts to about 1,000 watts at a frequency of about 13.56 MHz, and the preferable substrate spacing is between about 300 mils and about 800 mils.
- the top portion of the structure 300 may be planarized.
- a chemical mechanical polishing (CMP) apparatus may be used, such as the MirraTM System available from Applied Materials, Inc., located in Santa Clara, Calif.
- CMP chemical mechanical polishing
- portions of the copper 340 and dielectric 312 are removed from the top of the structure 300 leaving a fully planar surface.
- the intermediate surfaces of the structure 300 may be planarized between the deposition of the subsequent layers described above.
- FIG. 3E shows a portion of the substrate surface subjected to a pre-rinse/etch step to remove any unwanted contaminants thereon.
- the substrate is rinsed or cleaned using an acidic pre-clean solution to remove/etch at least a portion of the substrate surface as indicated by the dashed line 360 .
- FIG. 3F shows an initiation layer 370 formed over the bulk metal layer 350 as described above in step 120 .
- the initiation layer 370 may be deposited within an electroplating cell, such as the ElectraTM Cu ECP system, available from Applied Materials, Inc.
- the initiation layer 370 may also be deposited within the same cell as the bulk metal layer 350 .
- FIG. 3G shows a passivation layer 380 formed over the initiation layer 370 as described above in step 130 .
- the passivation layer 380 may also be deposited within its own designated electroplating cell, such as the ElectraTM Cu ECP system. Alternatively, the passivation layer 380 may be deposited within the same cell used to form the initiation layer 370 and/or the bulk metal layer 350 .
- the substrate surface is then exposed to a post-deposition cleaning process as described above in step 140 shown in FIG. 1 .
- the cleaning composition may be applied in-situ or the substrate may be transferred to a different cell prior to cleaning.
- a patterned or etched wafer formed according to conventional or well-known techniques was introduced into an integrated Endura® processing system available from Applied Materials, Inc., located in Santa Clara, Calif., which included a Pre-Clean II chamber, an IMP PVD Ta/TaN chamber, and a PVD Cu chamber mounted thereon, and was degassed at 350° C. for about 40 seconds.
- the wafer was first transferred to the Pre-Clean II chamber where about 250 ⁇ were removed from the surface of the patterned dielectric.
- a tantalum barrier layer was then deposited conformally in the via having a thickness of about 250 ⁇ using the IMP PVD Ta/TaN chamber.
- the wafer was then transferred to the PVD Cu chamber where a 1,000 ⁇ thick conformal seed layer was deposited in the via.
- the wafer was transferred to an ElectraTM Cu ECP system also available from Applied Materials, Inc., located in Santa Clara, Calif., where the via was filled with copper.
- the wafer was then moved to a chemical mechanical polishing system, such as the MirraTM system also available from Applied Materials, Inc., located in Santa Clara, Calif., to planarize the upper surface of the wafer.
- the wafer was then transferred back to the ElectraTM Cu ECP system, where an acidic pre-rinse solution was applied to the substrate surface removing about 25 ⁇ of the top portion of the substrate surface.
- the pre-rinse solution was a mixture of about 0.5 wt % of HF acid and 1 M nitric acid and was applied at a flow rate of about 750 mL/min for about 60 seconds at a temperature of about 25° C.
- a rinsing agent deionized water
- an initiation layer was deposited on the conductive portions of the substrate surface by applying an electroless solution containing 3 vol % (320 ppm) of palladium chloride and a sufficient amount of HCl to provide a pH of about 1.5 to the substrate surface.
- a 500 ⁇ thick passivation layer was then deposited on the initiation layer by electroless deposition using a cobalt electroless solution containing 20 g/L of cobalt sulfate, 50 g/L of sodium citrate, 20 g/L of sodium hypophosphite, and a sufficient amount of potassium hydroxide to provide a pH of about 10.
- a first substrate surface as prepared above, was exposed to an ultrasonic post-rinse process, which removed about 200 ⁇ of the passivation layer.
- the post-rinse solution was a mixture of nitric acid and deionized water at a ratio of 1:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm.
- the post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
- a second substrate surface was exposed to an ultrasonic post-rinse process, which removed about 200 ⁇ of the passivation layer.
- the post-rinse solution was a mixture of nitric acid and hydrogen peroxide at a ratio of 2:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm.
- the post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
- a third substrate surface was exposed to an ultrasonic post-rinse process, which removed about 200 ⁇ of the passivation layer.
- the post-rinse solution included a mixture of sulfuric acid and hydrogen peroxide at a ratio of 3:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm.
- the post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
- a fourth substrate surface was exposed to an ultrasonic post-rinse process, which removed about 200 ⁇ of the passivation layer.
- the post-rinse solution included a mixture of hydrochloric acid and hydrogen peroxide at a ratio of 3:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm.
- the post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
Abstract
A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 Å and about 200 Å of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.
Description
- This application is a divisional of co-pending U.S. patent application Ser. No. 10/284,855, filed Oct. 30, 2002, which is herein incorporated by reference.
- 1. Field of the Invention
- Embodiments of the invention relate to a method for manufacturing integrated circuit devices. More particularly, embodiments of the invention relate to a method for forming metal interconnects.
- 2. Description of the Related Art
- Sub-quarter micron multilevel metallization is one of the key technologies for the next generation of very large scale integration (VLSI). The multilevel interconnects that lie at the heart of this technology possess high aspect ratio features, including contacts, vias, lines, or other apertures. Reliable formation of these features is very important to the success of VLSI and to the continued effort to increase quality and circuit density on individual substrates. Therefore, there is a great amount of ongoing effort being directed to the formation of void-free features having high aspect ratios (height:width) of 4:1 or greater.
- The presence of native oxides and other contaminants within a feature causes problems during fabrication. For example, the presence of native oxides and other contaminants within a feature creates voids by promoting uneven distribution of a depositing layer. The presence of native oxides and other contaminants can also reduce the electromigration resistance of vias and small features. Further, the presence of native oxides and other contaminants can diffuse into the dielectric layer, the sublayer, or the depositing layer and alter the performance of the device. Typically, native oxides are formed when a substrate surface having a nonconductive layer (silicon, silicon oxide) or a conductive layer (aluminum, tungsten, titanium, tantalum, tungsten, copper) disposed thereon, is exposed to oxygen in the atmosphere or is damaged in a plasma etch step. The “other contaminants” may be generated from sputtered material from an oxide over-etch, residual photoresist from a stripping process, leftover polymer from a previous oxide etch step, or redeposited material from a pre-clean sputter etch process, for example.
- A typical process for forming an interconnect on a substrate includes depositing one or more layers, etching at least one of the layer(s) to form one or more features, depositing a barrier layer in the feature(s) and depositing one or more layers to fill the feature. Copper and its alloys have become the metals of choice for filling sub-micron interconnect technology because copper has a lower resistivity than aluminum, (1.7 μΩ-cm compared to 3.1 μΩ-cm for aluminum), a higher current carrying capacity, and a significantly higher electromigration resistance. Copper also has good thermal conductivity and is available in a highly pure state.
- However, copper readily forms oxides when exposed to atmospheric conditions. Copper oxides increase the resistance of metal layers, become a source of particle problems, and reduce the reliability of the overall circuit. Copper oxides may also interfere with subsequent deposition processes.
- One solution to prevent the formation of copper oxides is to deposit a passivation layer or encapsulation layer over the copper layer. A passivation layer isolates copper surfaces from ambient oxygen. Cobalt and cobalt alloys have been observed as suitable materials for passivating copper and may be deposited on copper by electroless deposition techniques. However, copper does not satisfactorily catalyze or initiate deposition of cobalt and cobalt alloys from electroless solutions.
- To counteract this problem, a common approach has been to activate the copper surface by first depositing a catalytic material on the copper surface. The deposition of the catalytic material typically requires multiple, time consuming steps and, most times, the use of catalytic colloid compounds. Catalytic colloid compounds can adhere to dielectric materials and produce undesired, excessive, and non-selective deposition of passivating material on the substrate surface. Non-selective deposition of passivating material, such as deposition on dielectric materials, may lead to surface contamination, unwanted diffusion of conductive materials into dielectric materials, and even device failure from short circuits and other device irregularities.
- There is a need, therefore, for a method for selectively depositing a passivation layer on a conductive substrate using one or more electroplating techniques.
- Embodiments of the invention provide a method for depositing a passivation layer on a substrate surface using one or more electroplating techniques. In one aspect, the method includes selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution.
- In another aspect, the method includes polishing a substrate surface to expose a conductive material disposed in a dielectric material, exposing the substrate surface to a first acidic solution, selectively depositing an initiation layer on the conductive material by exposing the substrate surface to a first electroless solution, electrolessly depositing a passivating material comprising cobalt or a cobalt alloy on the initiation layer, and cleaning the substrate surface with a second acidic solution.
- In yet another aspect, the method includes cleaning a substrate surface with a first acidic solution, selectively depositing a noble metal selected from the group of palladium, platinum, alloys thereof, and combinations thereof on the substrate surface by exposing the substrate surface to an acidic electroless solution containing a noble metal salt and an inorganic acid, electrolessly depositing cobalt or a cobalt alloy on the noble metal, cleaning the substrate surface with a second acidic solution, and applying ultrasonic or megasonic energy to the substrate surface while cleaning the substrate surface with the second acidic solution.
- So that the manner in which the above recited aspects of the invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 illustrates an exemplary processing sequence according to embodiments of the invention described herein. -
FIG. 2 illustrates an alternative processing sequence according to embodiments of the invention described herein. -
FIGS. 3A-3G are simplified, schematic sectional views of an exemplary wafer at different stages of an interconnect fabrication sequence according to embodiments. -
FIG. 1 illustrates anexemplary processing sequence 100 according to embodiments of the invention. Instep 110, a substrate surface having one or more conductive materials at least partially formed thereon, such as copper for example, is pre-rinsed/treated to remove metal oxides or other contaminants from the substrate surface. “Substrate surface” as used herein refers to a layer of material that serves as a basis for subsequent processing operations. For example, a substrate surface may contain one or more conductive metals, such as aluminum, copper, tungsten, or combinations thereof, for example, and may form part of an interconnect feature such as a plug, via, contact, line, wire, and may also form part of a metal gate electrode. A substrate surface may also contain one or more nonconductive materials, such as silicon, doped silicon, germanium, gallium arsenide, glass, and sapphire, for example. - The pre-rinse/treatment process utilizes an acidic solution to remove/etch a top portion of the substrate surface, such as between about 10 Å and about 50 Å, which may have contaminating materials from a prior processing step. Such a prior processing step may be a planarizing process, for example. The acidic solution may contain an inorganic acid solution. For example, the acidic solution may contain between about 0.2 weight percent (wt %) to about 5 wt % of hydrofluoric acid (HF), such as about 0.5 wt %. The acidic solution may also contain nitric acid having a concentration between about 1 M and about 5 M. Alternatively, the acidic solution may be a mixture of sulfuric acid having a concentration between about 0.5 percent by volume (vol %) and about 10 vol %, such as between about 1 vol % and about 5 vol %, and hydrogen peroxide having a concentration between about 5 vol % and about 40 vol %, such as about 20 vol %.
- The pre-rinse solution is generally applied to the substrate surface at a rate between about 50 mUmin and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min. The pre-rinse solution is typically applied for about 5 seconds to about 300 seconds, such as between about 30 seconds and about 60 seconds at a temperature between about 15° C. and about 60° C. The pre-rinse solution may be applied in the same processing chamber or processing cell as any of the subsequent deposition processes.
- Optionally, a rinsing agent, such as deionized water for example, is then applied to the substrate surface to remove any remaining pre-rinse solution, any etched materials and particles, and any by-products that may have formed during the pre-rinse (step 110). The rinsing agent is generally applied to the substrate surface at a flow rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min. The rinsing agent is typically applied for about 5 seconds to about 300 seconds, such as between about 30 seconds and about 60 seconds at a temperature between about 15° C. and about 80° C. The rinsing agent may be applied by a spraying method as well as by any other method used for cleaning a substrate, such as by rinsing in an enclosure containing a cleaning solution or bath.
- Following the pre-rinse process (step 110), an initiation layer is deposited on the substrate surface, as shown at
step 120. In one aspect, the initiation layer is formed on the substrate surface by selectively depositing a noble metal, such as palladium, on the exposed conductive materials of the substrate surface (step 122). In another aspect, the initiation layer is formed on the substrate surface by exposing/rinsing the substrate surface with one or more boron-based reducing agents (step 124). - The initiation layer may be formed on the conductive portions of the substrate surface by electrolessly depositing one or more noble metals thereon. The electroless solution generally provides for the deposition of a noble metal to a thickness of about 50 Å or less, such as about 10 Å or less. The noble metal may be palladium, platinum, gold, silver, iridium, rhenium, rhodium, ruthenium, osmium, or any combination thereof. Preferably, the noble metal is palladium or platinum.
- In one aspect, the initiation layer is deposited from an electroless solution containing at least one noble metal salt and at least one acid (step 122). A concentration of the noble metal salt within the electroless solution should be between about 20 parts per million (ppm) and about 20 grams per liter (g/L), such as between about 80 ppm and about 300 ppm. Exemplary noble metal salts include palladium chloride (PdCl2), palladium sulfate (PdSO4), palladium ammonium chloride, and combinations thereof.
- The acid may be one or more inorganic acids, such as hydrochloric acid (HCl), sulfuric acid (H2SO4), hydrofluoric acid (HF), and combinations thereof, for example. Alternatively, the acid may be one or more organic acids, such as a carboxylic acid, including acetic acid (CH3COOH), for example. A sufficient amount of acid is included to provide an electroless solution having a pH of about 7 or less. Preferably, the pH of the electroless solution is between about 1 and about 3.
- In
step 122, the electroless solution for forming the initiation layer is generally applied to the substrate surface at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min. The electroless solution is typically applied for about 1 second to about 300 seconds, such as between about 5 seconds and about 60 seconds, at a temperature between about 15° C. and about 80° C. - In another aspect, the initiation layer is formed by rinsing or exposing the substrate surface to a borane-containing composition (step 124). The borane-containing composition forms a metal boride layer selectively on the exposed conductive metals and becomes a catalytic site for subsequent electroless deposition processes. The borane-containing composition contains one or more boron-based reducing agents, such as sodium borohydride, dimethylamine borane (DMAB), trimethylamine borane, and combinations thereof. Any alkali metal borohydrides and alkyl amine boranes may also be used. The borane-containing composition has a boron reducing agent concentration of about 0.25 grams per liter (g/L) to about 6 g/L, such as between about 2 g/L and about 4 g/L. The borane-containing composition may additionally include one or more pH adjusting agents to adjust a pH of the composition to between about 8 and about 13. Suitable pH adjusting agents include potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonium hydroxide, ammonium hydroxide derivatives, such as tetramethyl ammonium hydroxide, and combinations thereof.
- In
step 124, the underlying conductive material is exposed to the borane-containing composition for about 30 seconds to about 180 seconds at a temperature between about 15° C. and about 80° C. The borane-containing composition may be applied at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min. In one aspect, the borane-containing composition may include about 4 g/L of dimethylamine borane (DMAB) and a sufficient amount of sodium hydroxide to provide a pH of about 9. - Optionally, a rinsing agent, such as deionized water, for example, is applied to the substrate surface to remove any solution used in forming the initiation layer. The rinsing agent is generally applied to the substrate surface at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min. The rinsing agent is applied for about 5 seconds to about 300 seconds, such as between about 30 seconds and about 60 seconds, at a temperature between about 15° C. and about 80° C. The rinsing agent may be applied by a spraying method as well as by any other method for cleaning a substrate, such as by rinsing in an enclosure containing a cleaning solution or bath.
- A passivation layer is next deposited on the exposed initiation layer by a selective electroless deposition process in
step 130. Preferably, the passivation layer includes cobalt or a cobalt alloy. For example, useful cobalt alloys include cobalt-tungsten alloys, cobalt-phosphorus alloys, cobalt-tin alloys, cobalt-boron alloys, and ternary alloys, such as cobalt-tungsten-phosphorus and cobalt-tungsten-boron. The passivation layer may also include other metals and metal alloys, such as nickel, tin, titanium, tantalum, tungsten, molybdenum, platinum, iron, niobium, palladium, nickel cobalt alloys, doped cobalt, doped nickel alloys, nickel iron alloys, and combinations thereof. The passivation layer may be deposited to have a thickness of about 500 Å or less, such as between about 300 Å and about 500 Å. The passivation layer isolates and protects an underlying metal layer from exposure to oxygen, for example. Accordingly, the passivation layer prevents the formation of metal oxides. - Cobalt alloys, such as cobalt-tungsten, may be deposited by adding tungstic acid or tungstate salts, such as sodium tungstate, ammonium tungstate, and combinations thereof. Phosphorus for the cobalt-tungsten-phosphorus deposition may be obtained by using phosphorus-containing reducing agents, such as hypophosphite. Cobalt alloys, such as cobalt-tin, may be deposited by adding stannate salts including stannic sulfate, stannic chloride, and combinations thereof. The metals salts may be in the electroless solution at a concentration between about 0.5 g/L and about 30 g/L, such as between about 2.5 g/L and about 25 g/L.
- In one aspect, the passivation layer (step 130) is deposited from a metallic electroless solution containing at least one metal salt and at least one reducing agent. Suitable metal salts include chlorides, sulfates, sulfamates, or combinations thereof. One example of a metal salt is cobalt chloride. The metal salt may be in the electroless solution at a concentration between about 0.5 g/L and about 30 g/L, such as between about 2.5 g/L and about 25 g/L.
- Suitable reducing agents include sodium hypophosphite, hydrazine, formaldehyde, and combinations thereof. The reducing agents may also include borane-containing reducing agents, such as dimethylamine borane and sodium borohydride. The reducing agents have a concentration between about 1 g/L and about 30 g/L of the electroless solution. For example, hypophosphite may be added to the electroless solution at a concentration between about 15 g/L and about 30 g/L of the electroless composition.
- The electroless solution may further include between about 0.01 g/L and about 50 g/L of one or more additives to improve deposition of the metal. Additives may include surfactants (RE 610), complexing agents (carboxylic acids, such as sodium citrate and sodium succinate), pH adjusting agents (sodium hydroxide, potassium hydroxide), stabilizers (thiourea, glycolic acid), and combinations thereof.
- The metallic electroless solution is applied to the substrate surface at a rate between about 50 mL/min and about 2,000 mL/min, such as between about 700 mL/min and about 900 mL/min. The metallic electroless solution is applied for about 30 seconds to about 180 seconds, such as between about 60 seconds and about 120 seconds, at a temperature between about 60° C. and about 90° C.
- In one aspect, a cobalt electroless composition for forming the passivation layer may include about 20 g/L of cobalt sulfate, about 50 g/L of sodium citrate, about 20 g/L of sodium hypophosphite, and a sufficient amount of potassium hydroxide to provide a pH of between about 9 and about 11. This electroless composition may be applied to the substrate surface for about 120 seconds at a flow rate of about 750 mL/min and at a temperature of about 80° C. In another aspect, a cobalt-tungsten layer may be deposited by the addition of about 10 g/L of sodium tungstate.
- Following the passivation layer deposition, the substrate surface may be cleaned to remove unwanted portions of the passivating material (step 140). In one aspect, the substrate surface is rinsed with one or more oxidizing agents (step 142). In another aspect, ultrasonic or megasonic energy is applied to the substrate surface (step 144) during the rinse (step 142) to enhance removal of the unwanted materials.
- The post-deposition cleaning solution may include: (1) a solution of nitric acid and deionized water; (2) a mixture of nitric acid and hydrogen peroxide; (3) a mixture of sulfuric acid and hydrogen peroxide; (4) a mixture of hydrochloric acid and hydrogen peroxide; or (5) any combination thereof. The mixture of nitric acid and deionized water has an acid to water ratio between about 1:2 to about 3:1, such as about 1:1. The mixture of nitric acid and hydrogen peroxide has an acid to peroxide ratio between about 1:2 to about 3:1, such as about 2:1. The mixture of sulfuric acid and hydrogen peroxide has an acid to peroxide ratio between about 2:1 to about 4:1, such as about 3:1. The mixture of hydrochloric acid and hydrogen peroxide has an acid to peroxide ratio between about 2:1 to about 4:1, such as about 3:1. Typically, the hydrogen peroxide is an aqueous solution comprising between about 15% to about 40% hydrogen peroxide, such as 30% hydrogen peroxide. Regardless of the specific cleaning composition, the cleaning solution is generally applied to the substrate surface at a rate between about 700 mL/min and about 900 mL/min, at a temperature between about 15° C. and about 35° C., and at a pressure between about 0.5 atm and about 3 atm.
- The post-deposition cleaning solutions are believed to clean free cobalt particles, remove cobalt oxide, and remove reaction by-products, such as Co(OH)2 formed during deposition. The cleaning solution is also believed to remove a layer of cobalt material between about 1 Å to about 400 Å in thickness, such as between about 100 Å and about 200 Å, to remove any random growth or lateral growth of cobalt materials on the substrate surface and over the exposed conductive materials. Once cleaned, the substrate can be transferred for additional processing, such as annealing or subsequent deposition processes.
- In one aspect, the cleaning step (step 140) may be enhanced using one or more sources of ultrasonic or megasonic energy applied to the substrate support pedestal or substrate surface (step 144). For example, ultrasonic energy may be applied at a power between about 10 watts and about 250 watts, such as between about 10 watts and about 100 watts to the substrate support pedestal. The ultrasonic energy may have a frequency between about 25 kHz and about 200 kHz, preferably greater than about 40 kHz. The ultrasonic energy may be applied for between about 3 seconds and about 600 seconds, but longer time periods may be used depending upon the application. If two or more sources of ultrasonic energy are used, then simultaneous multiple frequencies may be used.
-
FIG. 2 illustrates an alternative processing sequence inprocess 200 according to embodiments of the invention described herein. Similar to theprocess 100 described above with reference toFIG. 1 , a substrate surface having one or more conductive materials at least partially formed thereon, such as copper, for example, is pre-rinsed/treated to remove metal oxides or other contaminants from the substrate surface, instep 210. Next, a passivation layer is deposited on the substrate surface using an electroless solution containing at least one metal salt and at least one borane-containing reducing agent, instep 220. Finally, the substrate surface is cleaned instep 230, by rinsing with one or more oxidizing agents and/or applying ultrasonic energy during the rinse step. - The
pre-rinse step 210 and thepost-rinse step 230 are similar tosteps - In one aspect, a cobalt electroless composition for forming the metal layer with a borane-containing reducing agent includes about 20 g/L of cobalt sulfate, about 50 g/L of sodium citrate, about 4 g/L of dimethylamine borane, and a sufficient amount of potassium hydroxide to provide a pH of between about 10 and about 12. This electroless composition may be applied to the substrate surface for about 120 seconds at a flow rate of about 750 mL/min and at a temperature of about 80° C. Optionally, a cobalt-tungsten-boron layer may be deposited by the addition of about 10 g/L of sodium tungstate.
- The processing steps described above may be performed in an integrated processing platform, such as the Electra™ ECP processing platform, which is commercially available from Applied Materials, Inc., located in Santa Clara, Calif. The Electra Cu™ ECP platform generally includes one or more electroless deposition processing (EDP) cells, pre-deposition cells, post-deposition cells, such as spin-rinse-dry (SRD) cells, etch chambers, and anneal chambers. The Electra™ ECP processing platform is more fully described in U.S. Pat. No. 6,258,223, issued on Jul. 10, 2001, which is incorporated by reference herein.
-
FIGS. 3A-3G are schematic representations of anexemplary interconnect structure 300 at different stages of fabrication in accordance with embodiments of the invention described herein.FIG. 3A shows anunderlying substrate surface 310 having adielectric layer 312 formed thereon. Thedielectric layer 312 may be any dielectric material including a low k dielectric material (k≦4.0), whether presently known or yet to be discovered. For example, thedielectric layer 312 may be fluorinated silicon glass (FSG), silicon dioxide, silicon carbide, or siloxy carbide deposited using conventional deposition techniques, such as physical vapor deposition and chemical vapor deposition. Thedielectric layer 312 is etched to form afeature 314 therein using conventional and well-known techniques. Thefeature 314 may be a plug, via, contact, line, wire, or any other interconnect component. For simplicity and ease of description, however, thefeature 314 will be further described with reference to a via. Typically, thefeature 314 hasvertical sidewalls 316 and afloor 318, having an aspect ratio of about 4:1 or greater, such as about 6:1. Thefloor 318 exposes at least a portion of theunderlying substrate surface 310. Although not shown, a wire definition may be etched with the via as is commonly known to form a dual damascene structure. -
FIG. 3B shows abarrier layer 330 at least partially deposited on theunderlying metal layer 310. Prior to depositing thebarrier layer 330, the patterned or etchedsubstrate dielectric layer 312 may be cleaned to remove native oxides or other contaminants from the surface thereof. For example, reactive gases are excited into a plasma within a remote plasma source chamber such as a Reactive Pre-Clean chamber available from Applied Materials, Inc., located in Santa Clara, Calif. Pre-cleaning may also be done within a metal CVD or PVD chamber by connecting the remote plasma source thereto. Alternatively, metal deposition chambers having gas delivery systems could be modified to deliver the pre-cleaning gas plasma through existing gas inlets such as a gas distribution showerhead positioned above the substrate. - In one aspect, the reactive pre-clean process forms radicals from a plasma of one or more reactive gases, such as argon, helium, hydrogen, nitrogen, fluorine-containing compounds, and combinations thereof. For example, a reactive gas may include a mixture of tetrafluorocarbon (CF4) and oxygen (O2), or a mixture of helium (He) and nitrogen trifluoride (NF3). More preferably, the reactive gas is a mixture of helium and nitrogen trifluoride.
- The plasma is typically generated by applying a power of about 500 watts to 2,000 watts RF at a frequency of about 200 kHz to 114 MHz. The flow of reactive gases ranges between about 100 sccm and about 1,000 sccm and the plasma treatment lasts for about 10 seconds to about 150 seconds. Preferably, the plasma is generated in one or more treatment cycles and purged between cycles. For example, four treatment cycles lasting 35 seconds each is effective.
- In another aspect, the patterned or etched
dielectric layer 312 may be pre-cleaned first using an argon plasma and then a hydrogen plasma. A processing gas having greater than about 50% argon by number of atoms is introduced at a pressure of about 0.8 mTorr. A plasma is struck to subject thedielectric layer 312 to an argon sputter cleaning environment. The argon plasma is preferably generated by applying between about 50 watts and about 500 watts of RF power. The argon plasma is maintained for between about 10 seconds and about 300 seconds to provide sufficient cleaning time for the deposits that are not readily removed by a reactive hydrogen plasma. - Following the argon plasma, the chamber pressure is increased to about 140 mTorr, and a processing gas consisting essentially of hydrogen and helium is introduced into the processing region. Preferably, the processing gas comprises about 5% hydrogen and about 95% helium. The hydrogen plasma is generated by applying between about 50 watts and about 500 watts power. The hydrogen plasma is maintained for about 10 seconds to about 300 seconds.
- The
barrier layer 330 is conformally deposited on thefloor 318 as well as theside walls 316 of thefeature 314 using conventional deposition techniques. Thebarrier layer 330 acts as a diffusion barrier to prevent inter-diffusion of a copper metal to be subsequently deposited into the via. Preferably, thebarrier layer 330 is a thin layer of a refractory metal having a thickness between about 10 Å and about 1,000 Å. For example, thebarrier layer 330 may include tungsten (W), tantalum (Ta), titanium (Ti), tantalum nitride (TaN), titanium nitride (TiN), or combinations thereof. Preferably, the barrier layer contains tantalum nitride deposited to a thickness of about 20 Å or less using atomic layer deposition or cyclical layer deposition techniques, such as the cyclical layer deposition process shown and described in co-pending U.S. patent application Ser. No. 10/199,415, filed on Jul. 18, 2002, entitled “Enhanced Copper Growth With Ultrathin Barrier Layer For High Performance Interconnects,” which is incorporated by reference herein. -
FIG. 3C shows aseed layer 340 at least partially deposited on thebarrier layer 330. Theseed layer 340 is a copper or a copper alloy material, which may be deposited using physical vapor deposition, chemical vapor deposition, electroless plating, and electroplating techniques. Preferably, theseed layer 340 is deposited using a high density plasma physical vapor deposition (HDP-PVD) process to enable good conformal coverage. One example of a HDP-PVD chamber is the Self-Ionized Plasma SIP™ chamber, available from Applied Materials, Inc. of Santa Clara, Calif. -
FIG. 3D shows abulk metal layer 350 at least partially deposited on theseed layer 340. Thebulk metal layer 350 is deposited on theseed layer 340 to fill the via. Thebulk metal layer 350 may be deposited using CVD, PVD, electroplating, or electroless techniques to a thickness between about 1,000 Å and about 2,000 Å. Thebulk metal layer 350 may include aluminum, titanium, tungsten, copper, and combinations thereof. Preferably, thebulk metal layer 350 contains copper deposited within an electroplating cell, such as the Electra™ Cu ECP system, available from Applied Materials, Inc. of Santa Clara, Calif. - A copper electrolyte solution and copper electroplating technique is described in commonly assigned U.S. Pat. No. 6,113,771, entitled “Electro-deposition Chemistry,” which is incorporated by reference herein. Typically, the electroplating bath has a copper concentration greater than about 0.7 M, for example, a copper sulfate concentration of about 0.85 M, and a pH of about 1.75. The electroplating bath may also contain various additives as is well known in the art. The temperature of the bath is between about 15° C. and about 25° C. The bias is between about −15 volts to about 15 volts. In one aspect, the positive bias ranges from about 0.1 volts to about 10 volts and the negative bias ranges from about −0.1 volts to about −10 volts.
- Optionally, an anneal treatment may be performed following the
metal layer 350 deposition whereby the wafer is subjected to a temperature between about 100° C. and about 400° C. for about 10 minutes to about 1 hour, preferably about 30 minutes. A carrier/purge gas such as helium, hydrogen, nitrogen, or a mixture thereof is introduced at a rate of about 100 sccm to about 10,000 sccm. The chamber pressure is maintained between about 2 Torr and about 10 Torr. The RF power is about 200 watts to about 1,000 watts at a frequency of about 13.56 MHz, and the preferable substrate spacing is between about 300 mils and about 800 mils. - Following the
bulk metal layer 350 deposition, the top portion of thestructure 300 may be planarized. A chemical mechanical polishing (CMP) apparatus may be used, such as the Mirra™ System available from Applied Materials, Inc., located in Santa Clara, Calif. During the planarization process, portions of thecopper 340 and dielectric 312 are removed from the top of thestructure 300 leaving a fully planar surface. Optionally, the intermediate surfaces of thestructure 300 may be planarized between the deposition of the subsequent layers described above. -
FIG. 3E shows a portion of the substrate surface subjected to a pre-rinse/etch step to remove any unwanted contaminants thereon. The substrate is rinsed or cleaned using an acidic pre-clean solution to remove/etch at least a portion of the substrate surface as indicated by the dashedline 360. -
FIG. 3F shows aninitiation layer 370 formed over thebulk metal layer 350 as described above instep 120. Theinitiation layer 370 may be deposited within an electroplating cell, such as the Electra™ Cu ECP system, available from Applied Materials, Inc. Theinitiation layer 370 may also be deposited within the same cell as thebulk metal layer 350. -
FIG. 3G shows apassivation layer 380 formed over theinitiation layer 370 as described above instep 130. Thepassivation layer 380 may also be deposited within its own designated electroplating cell, such as the Electra™ Cu ECP system. Alternatively, thepassivation layer 380 may be deposited within the same cell used to form theinitiation layer 370 and/or thebulk metal layer 350. The substrate surface is then exposed to a post-deposition cleaning process as described above instep 140 shown inFIG. 1 . The cleaning composition may be applied in-situ or the substrate may be transferred to a different cell prior to cleaning. - The following examples describe specific post-rinse processes performed on a 200 mm substrate according to embodiments of the invention. In each example, the 200 mm substrate surface had been prepared as follows.
- A patterned or etched wafer formed according to conventional or well-known techniques was introduced into an integrated Endura® processing system available from Applied Materials, Inc., located in Santa Clara, Calif., which included a Pre-Clean II chamber, an IMP PVD Ta/TaN chamber, and a PVD Cu chamber mounted thereon, and was degassed at 350° C. for about 40 seconds. The wafer was first transferred to the Pre-Clean II chamber where about 250 Å were removed from the surface of the patterned dielectric. A tantalum barrier layer was then deposited conformally in the via having a thickness of about 250 Å using the IMP PVD Ta/TaN chamber. The wafer was then transferred to the PVD Cu chamber where a 1,000 Å thick conformal seed layer was deposited in the via. Next, the wafer was transferred to an Electra™ Cu ECP system also available from Applied Materials, Inc., located in Santa Clara, Calif., where the via was filled with copper. The wafer was then moved to a chemical mechanical polishing system, such as the Mirra™ system also available from Applied Materials, Inc., located in Santa Clara, Calif., to planarize the upper surface of the wafer.
- The wafer was then transferred back to the Electra™ Cu ECP system, where an acidic pre-rinse solution was applied to the substrate surface removing about 25 Å of the top portion of the substrate surface. The pre-rinse solution was a mixture of about 0.5 wt % of HF acid and 1 M nitric acid and was applied at a flow rate of about 750 mL/min for about 60 seconds at a temperature of about 25° C. A rinsing agent (deionized water) was then sprayed onto the substrate surface at a flow rate of about 750 mL/min for about 60 seconds. Next, an initiation layer was deposited on the conductive portions of the substrate surface by applying an electroless solution containing 3 vol % (320 ppm) of palladium chloride and a sufficient amount of HCl to provide a pH of about 1.5 to the substrate surface. A 500 Å thick passivation layer was then deposited on the initiation layer by electroless deposition using a cobalt electroless solution containing 20 g/L of cobalt sulfate, 50 g/L of sodium citrate, 20 g/L of sodium hypophosphite, and a sufficient amount of potassium hydroxide to provide a pH of about 10.
- In this example, a first substrate surface, as prepared above, was exposed to an ultrasonic post-rinse process, which removed about 200 Å of the passivation layer. The post-rinse solution was a mixture of nitric acid and deionized water at a ratio of 1:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm. The post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
- In this example, a second substrate surface, as prepared above, was exposed to an ultrasonic post-rinse process, which removed about 200 Å of the passivation layer. The post-rinse solution was a mixture of nitric acid and hydrogen peroxide at a ratio of 2:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm. The post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
- In this example, a third substrate surface, as prepared above, was exposed to an ultrasonic post-rinse process, which removed about 200 Å of the passivation layer. The post-rinse solution included a mixture of sulfuric acid and hydrogen peroxide at a ratio of 3:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm. The post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
- In this example, a fourth substrate surface, as prepared above, was exposed to an ultrasonic post-rinse process, which removed about 200 Å of the passivation layer. The post-rinse solution included a mixture of hydrochloric acid and hydrogen peroxide at a ratio of 3:1 and was applied to the substrate surface at a flow rate of about 750 mL/min for 45 seconds at a temperature of 25° C. and a pressure of 1 atm. The post-rinse process was enhanced by applying ultrasonic energy having a frequency of 100 kHz at 50 watts for 300 seconds to the substrate support pedestal.
- While the foregoing is directed to the preferred embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof. The scope of the invention is determined by the claims that follow.
Claims (20)
1. A method of processing a substrate, comprising:
polishing a substrate surface to expose a conductive material disposed in a dielectric material;
cleaning the substrate surface with a first acidic solution;
selectively depositing an initiation layer on the conductive material by exposing the substrate surface to an initiation solution;
depositing a passivating material comprising cobalt or a cobalt alloy on the initiation layer by exposing the substrate surface to an electroless solution; and
cleaning the substrate surface with a cleaning process.
2. The method of claim 1 , wherein the first acidic solution comprises a mixture selected from a group consisting of nitric acid and deionized water at a ratio of about 1:2 to about 3:1, nitric acid and hydrogen peroxide at a ratio of about 1:2 to about 3:1, sulfuric acid and hydrogen peroxide at a ratio of about 2:1 to about 4:1, or hydrochloric acid and hydrogen peroxide at a ratio of about 2:1 to about 4:1.
3. The method of claim 2 , wherein the initiation solution comprises a noble metal source selected from the group consisting of palladium, platinum or ruthenium.
4. The method of claim 2 , wherein the initiation solution comprises a borane reductant.
5. The method of claim 2 , wherein the first acidic solution comprises between about 0.2 wt % and about 5 wt % of hydrofluoric acid and is applied to the substrate surface for about 300 seconds or less at a temperature in a range from about 15° C. to about 60° C.
6. The method of claim 5 , wherein the electroless solution comprises a cobalt source, a tungsten source, a hypophosphite source, a borane reductant, a citrate source and a surfactant.
7. A method of processing a substrate, comprising:
cleaning a substrate surface with a first acidic solution;
selectively depositing a noble metal on the substrate surface by exposing the substrate surface to an acidic electroless solution containing a noble metal salt and an inorganic acid;
electrolessly depositing cobalt or a cobalt alloy on the noble metal;
cleaning the substrate surface with a second acidic solution selected from the group consisting of nitric acid and deionized water at a ratio of about 1:2 to about 3:1, nitric acid and hydrogen peroxide at a ratio of about 1:2 to about 3:1, sulfuric acid and hydrogen peroxide at a ratio of about 2:1 to about 4:1, or hydrochloric acid and hydrogen peroxide at a ratio of about 2:1 to about 4:1; and
applying ultrasonic or megasonic energy to the substrate surface while cleaning the substrate surface with the second acidic solution.
8. The method of claim 7 , wherein the first acidic solution comprises between about 0.2 wt % and about 5 wt % of hydrofluoric acid and is applied to the substrate surface for about 300 seconds or less at a temperature in a range from about 15° C. to about 60° C.
9. The method of claim 8 , wherein the second acidic solution is applied to the substrate surface at a flow rate between about 700 mL/min and about 900 mL/min for about 300 seconds or less at a temperature in a range from about 15° C. to about 35° C.
10. The method of claim 9 , wherein the second acidic solution removes between about 100 Å and about 200 Å of the cobalt or cobalt alloy disposed on the substrate surface.
11. The method of claim 10 , wherein the cobalt alloy comprises cobalt and at least a second element selected from the group consisting of tungsten, molybdenum, tin, phosphorous, boron and combinations thereof.
12. The method of claim 11 , wherein depositing the cobalt alloy includes exposing the substrate surface to a cobalt electroless solution comprising a cobalt source, a tungsten source, a hypophosphite source, a borane reductant, a citrate source and a surfactant.
13. A method of depositing a cobalt-containing layer on a conductive material, comprising:
exposing a substrate surface to a first acidic solution to clean the conductive layer;
exposing the substrate surface to a water rinse process;
exposing the substrate surface to an initiation solution to form an initiation layer on the conductive layer;
exposing the substrate surface to the water rinse process; and
exposing the substrate surface to an electroless solution to form the cobalt-containing layer on the initiation layer, wherein the electroless solution comprises a cobalt source, a tungsten source, a hypophosphite source, a borane reductant, a citrate source, a surfactant and a pH adjusting agent in a concentration such that the electroless solution has a pH at a value in a range from about 9 to about 11.
14. The method of claim 13 , wherein the conductive layer comprises copper.
15. The method of claim 14 , wherein the cobalt-containing layer comprises cobalt and at least a second element selected from the group consisting of tungsten, molybdenum, tin, phosphorous, boron and combinations thereof.
16. The method of claim 15 , wherein the first acidic solution comprises nitric acid.
17. The method of claim 16 , further comprises exposing the substrate surface containing the cobalt-containing layer to a second acidic solution.
18. The method of claim 17 , wherein the second acidic solution comprises nitric acid.
19. The method of claim 16 , wherein the initiation solution comprises a noble metal source selected from the group consisting of palladium, platinum or ruthenium.
20. The method of claim 16 , wherein the initiation solution comprises a borane reductant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/979,078 US20050136185A1 (en) | 2002-10-30 | 2004-10-29 | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/284,855 US6821909B2 (en) | 2002-10-30 | 2002-10-30 | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
US10/979,078 US20050136185A1 (en) | 2002-10-30 | 2004-10-29 | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/284,855 Division US6821909B2 (en) | 2002-10-30 | 2002-10-30 | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050136185A1 true US20050136185A1 (en) | 2005-06-23 |
Family
ID=32174995
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/284,855 Expired - Fee Related US6821909B2 (en) | 2002-10-30 | 2002-10-30 | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
US10/979,078 Abandoned US20050136185A1 (en) | 2002-10-30 | 2004-10-29 | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/284,855 Expired - Fee Related US6821909B2 (en) | 2002-10-30 | 2002-10-30 | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application |
Country Status (1)
Country | Link |
---|---|
US (2) | US6821909B2 (en) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030190426A1 (en) * | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US20050095830A1 (en) * | 2003-10-17 | 2005-05-05 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
US20050101130A1 (en) * | 2003-11-07 | 2005-05-12 | Applied Materials, Inc. | Method and tool of chemical doping CoW alloys with Re for increasing barrier properties of electroless capping layers for IC Cu interconnects |
US20050124158A1 (en) * | 2003-10-15 | 2005-06-09 | Lopatin Sergey D. | Silver under-layers for electroless cobalt alloys |
US20050136193A1 (en) * | 2003-10-17 | 2005-06-23 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
US20050161338A1 (en) * | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
US20050170650A1 (en) * | 2004-01-26 | 2005-08-04 | Hongbin Fang | Electroless palladium nitrate activation prior to cobalt-alloy deposition |
US20050253268A1 (en) * | 2004-04-22 | 2005-11-17 | Shao-Ta Hsu | Method and structure for improving adhesion between intermetal dielectric layer and cap layer |
US20060240187A1 (en) * | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
US20060246699A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Process for electroless copper deposition on a ruthenium seed |
US20060251800A1 (en) * | 2005-03-18 | 2006-11-09 | Weidman Timothy W | Contact metallization scheme using a barrier layer over a silicide layer |
US20060264043A1 (en) * | 2005-03-18 | 2006-11-23 | Stewart Michael P | Electroless deposition process on a silicon contact |
US20070071888A1 (en) * | 2005-09-21 | 2007-03-29 | Arulkumar Shanmugasundram | Method and apparatus for forming device features in an integrated electroless deposition system |
US20080003797A1 (en) * | 2006-06-29 | 2008-01-03 | Hynix Semiconductor Inc. | Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same |
US20080032472A1 (en) * | 2006-08-01 | 2008-02-07 | Chen-Hua Yu | Methods for improving uniformity of cap layers |
US20090017624A1 (en) * | 2007-07-09 | 2009-01-15 | Chih-Hung Liao | Nodule Defect Reduction in Electroless Plating |
US20090060142A1 (en) * | 2007-09-04 | 2009-03-05 | Adams William L | X-Ray Tube with Enhanced Small Spot Cathode and Methods for Manufacture Thereof |
US7651934B2 (en) | 2005-03-18 | 2010-01-26 | Applied Materials, Inc. | Process for electroless copper deposition |
US20130224511A1 (en) * | 2012-02-24 | 2013-08-29 | Artur Kolics | Methods and materials for anchoring gapfill metals |
WO2014179087A1 (en) * | 2013-05-01 | 2014-11-06 | Applied Materials, Inc. | Cobalt removal for chamber clean or pre-clean process |
US20150140812A1 (en) * | 2013-11-16 | 2015-05-21 | Applied Materials, Inc. | Methods for dry etching cobalt metal using fluorine radicals |
Families Citing this family (315)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6881437B2 (en) * | 2003-06-16 | 2005-04-19 | Blue29 Llc | Methods and system for processing a microelectronic topography |
US7883739B2 (en) * | 2003-06-16 | 2011-02-08 | Lam Research Corporation | Method for strengthening adhesion between dielectric layers formed adjacent to metal layers |
JP2005150280A (en) * | 2003-11-13 | 2005-06-09 | Toshiba Corp | Manufacturing method of semiconductor device and semiconductor manufacturing device |
US20060029833A1 (en) * | 2004-08-09 | 2006-02-09 | Ivanov Igor C | Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom |
US7390739B2 (en) * | 2005-05-18 | 2008-06-24 | Lazovsky David E | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
US8882914B2 (en) * | 2004-09-17 | 2014-11-11 | Intermolecular, Inc. | Processing substrates using site-isolated processing |
US20060060301A1 (en) * | 2004-09-17 | 2006-03-23 | Lazovsky David E | Substrate processing using molecular self-assembly |
US20060292846A1 (en) * | 2004-09-17 | 2006-12-28 | Pinto Gustavo A | Material management in substrate processing |
US8084400B2 (en) * | 2005-10-11 | 2011-12-27 | Intermolecular, Inc. | Methods for discretized processing and process sequence integration of regions of a substrate |
US7749881B2 (en) * | 2005-05-18 | 2010-07-06 | Intermolecular, Inc. | Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region |
WO2006058034A2 (en) * | 2004-11-22 | 2006-06-01 | Intermolecular, Inc. | Molecular self-assembly in substrate processing |
US7879710B2 (en) * | 2005-05-18 | 2011-02-01 | Intermolecular, Inc. | Substrate processing including a masking layer |
US20060188659A1 (en) * | 2005-02-23 | 2006-08-24 | Enthone Inc. | Cobalt self-initiated electroless via fill for stacked memory cells |
US20060266737A1 (en) * | 2005-05-27 | 2006-11-30 | Hanestad Ronald J | Process for removal of metals and alloys from a substrate |
WO2007016218A2 (en) * | 2005-07-29 | 2007-02-08 | Applied Materials, Inc. | Integrated electroless deposition system |
US7955436B2 (en) * | 2006-02-24 | 2011-06-07 | Intermolecular, Inc. | Systems and methods for sealing in site-isolated reactors |
US7902063B2 (en) * | 2005-10-11 | 2011-03-08 | Intermolecular, Inc. | Methods for discretized formation of masking and capping layers on a substrate |
US8776717B2 (en) * | 2005-10-11 | 2014-07-15 | Intermolecular, Inc. | Systems for discretized processing of regions of a substrate |
US7320937B1 (en) * | 2005-10-19 | 2008-01-22 | The United States Of America As Represented By The National Security Agency | Method of reliably electroless-plating integrated circuit die |
US7245025B2 (en) * | 2005-11-30 | 2007-07-17 | International Business Machines Corporation | Low cost bonding pad and method of fabricating same |
US8772772B2 (en) * | 2006-05-18 | 2014-07-08 | Intermolecular, Inc. | System and method for increasing productivity of combinatorial screening |
KR101388389B1 (en) * | 2006-02-10 | 2014-04-22 | 인터몰레큘러 인코퍼레이티드 | Method and apparatus for combinatorially varying materials, unit process and process sequence |
US7598614B2 (en) | 2006-04-07 | 2009-10-06 | International Business Machines Corporation | Low leakage metal-containing cap process using oxidation |
US8011317B2 (en) * | 2006-12-29 | 2011-09-06 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
US20080236619A1 (en) * | 2007-04-02 | 2008-10-02 | Enthone Inc. | Cobalt capping surface preparation in microelectronics manufacture |
US7670497B2 (en) * | 2007-07-06 | 2010-03-02 | International Business Machines Corporation | Oxidant and passivant composition and method for use in treating a microelectronic structure |
US7867900B2 (en) | 2007-09-28 | 2011-01-11 | Applied Materials, Inc. | Aluminum contact integration on cobalt silicide junction |
US8823176B2 (en) * | 2008-10-08 | 2014-09-02 | International Business Machines Corporation | Discontinuous/non-uniform metal cap structure and process for interconnect integration |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US8663397B1 (en) | 2012-10-22 | 2014-03-04 | Intermolecular, Inc. | Processing and cleaning substrates |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
WO2015192144A2 (en) * | 2014-06-13 | 2015-12-17 | Hzo, Inc. | Protective coatings for electronic devices and atomic layer deposition processes for forming the protective coatings |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
KR102263121B1 (en) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor device and manufacuring method thereof |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) * | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
KR102592471B1 (en) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming metal interconnection and method of fabricating semiconductor device using the same |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (en) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
KR102613349B1 (en) | 2016-08-25 | 2023-12-14 | 에이에스엠 아이피 홀딩 비.브이. | Exhaust apparatus and substrate processing apparatus and thin film fabricating method using the same |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
CN111316417B (en) | 2017-11-27 | 2023-12-22 | 阿斯莫Ip控股公司 | Storage device for storing wafer cassettes for use with batch ovens |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
CN111630203A (en) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | Method for depositing gap filling layer by plasma auxiliary deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN116732497A (en) | 2018-02-14 | 2023-09-12 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
TWI811348B (en) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TW202349473A (en) | 2018-05-11 | 2023-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
TW202013553A (en) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
KR20210027265A (en) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
TW202104632A (en) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
KR102638425B1 (en) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for filling a recess formed within a substrate surface |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TW202121506A (en) | 2019-07-19 | 2021-06-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
TW202115273A (en) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
TW202125596A (en) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210132576A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming vanadium nitride-containing layer and structure comprising the same |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
KR20220027026A (en) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | Method and system for forming metal silicon oxide and metal silicon oxynitride |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
US11515154B2 (en) * | 2020-10-27 | 2022-11-29 | Applied Materials, Inc. | Selective deposition of a passivation film |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
KR20220076343A (en) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | an injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
GB2622073A (en) * | 2022-09-01 | 2024-03-06 | Oort Energy Ltd | A method for coating a component of an electrolyser |
Citations (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2369620A (en) * | 1941-03-07 | 1945-02-13 | Battelle Development Corp | Method of coating cupreous metal with tin |
US3403035A (en) * | 1964-06-24 | 1968-09-24 | Process Res Company | Process for stabilizing autocatalytic metal plating solutions |
US3745039A (en) * | 1971-10-28 | 1973-07-10 | Rca Corp | Electroless cobalt plating bath and process |
US3937857A (en) * | 1974-07-22 | 1976-02-10 | Amp Incorporated | Catalyst for electroless deposition of metals |
US4006047A (en) * | 1974-07-22 | 1977-02-01 | Amp Incorporated | Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates |
US4150177A (en) * | 1976-03-31 | 1979-04-17 | Massachusetts Institute Of Technology | Method for selectively nickeling a layer of polymerized polyester resin |
US4265943A (en) * | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
US4368223A (en) * | 1981-06-01 | 1983-01-11 | Asahi Glass Company, Ltd. | Process for preparing nickel layer |
US4397812A (en) * | 1974-05-24 | 1983-08-09 | Richardson Chemical Company | Electroless nickel polyalloys |
US4810520A (en) * | 1987-09-23 | 1989-03-07 | Magnetic Peripherals Inc. | Method for controlling electroless magnetic plating |
US5147692A (en) * | 1990-05-08 | 1992-09-15 | Macdermid, Incorporated | Electroless plating of nickel onto surfaces such as copper or fused tungston |
US5203911A (en) * | 1991-06-24 | 1993-04-20 | Shipley Company Inc. | Controlled electroless plating |
US5235139A (en) * | 1990-09-12 | 1993-08-10 | Macdermid, Incorprated | Method for fabricating printed circuits |
US5240497A (en) * | 1991-10-08 | 1993-08-31 | Cornell Research Foundation, Inc. | Alkaline free electroless deposition |
US5248527A (en) * | 1991-03-01 | 1993-09-28 | C. Uyemura And Company, Limited | Process for electroless plating tin, lead or tin-lead alloy |
US5380560A (en) * | 1992-07-28 | 1995-01-10 | International Business Machines Corporation | Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition |
US5384284A (en) * | 1993-10-01 | 1995-01-24 | Micron Semiconductor, Inc. | Method to form a low resistant bond pad interconnect |
US5415890A (en) * | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5510216A (en) * | 1993-08-25 | 1996-04-23 | Shipley Company Inc. | Selective metallization process |
US5614003A (en) * | 1996-02-26 | 1997-03-25 | Mallory, Jr.; Glenn O. | Method for producing electroless polyalloys |
US5648125A (en) * | 1995-11-16 | 1997-07-15 | Cane; Frank N. | Electroless plating process for the manufacture of printed circuit boards |
US5674787A (en) * | 1996-01-16 | 1997-10-07 | Sematech, Inc. | Selective electroless copper deposited interconnect plugs for ULSI applications |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US5755859A (en) * | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
US5824599A (en) * | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
US5882433A (en) * | 1995-05-23 | 1999-03-16 | Tokyo Electron Limited | Spin cleaning method |
US5885749A (en) * | 1997-06-20 | 1999-03-23 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of layer interconnect material |
US5891513A (en) * | 1996-01-16 | 1999-04-06 | Cornell Research Foundation | Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications |
US5895810A (en) * | 1995-03-23 | 1999-04-20 | Biopure Corporation | Stable polymerized hemoglobin and use thereof |
US5904827A (en) * | 1996-10-15 | 1999-05-18 | Reynolds Tech Fabricators, Inc. | Plating cell with rotary wiper and megasonic transducer |
US5907790A (en) * | 1993-07-15 | 1999-05-25 | Astarix Inc. | Aluminum-palladium alloy for initiation of electroless plating |
US5910340A (en) * | 1995-10-23 | 1999-06-08 | C. Uyemura & Co., Ltd. | Electroless nickel plating solution and method |
US5913147A (en) * | 1997-01-21 | 1999-06-15 | Advanced Micro Devices, Inc. | Method for fabricating copper-aluminum metallization |
US5932077A (en) * | 1998-02-09 | 1999-08-03 | Reynolds Tech Fabricators, Inc. | Plating cell with horizontal product load mechanism |
US6010962A (en) * | 1999-02-12 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company | Copper chemical-mechanical-polishing (CMP) dishing |
US6015747A (en) * | 1998-12-07 | 2000-01-18 | Advanced Micro Device | Method of metal/polysilicon gate formation in a field effect transistor |
US6015724A (en) * | 1995-11-02 | 2000-01-18 | Semiconductor Energy Laboratory Co. | Manufacturing method of a semiconductor device |
US6065424A (en) * | 1995-12-19 | 2000-05-23 | Cornell Research Foundation, Inc. | Electroless deposition of metal films with spray processor |
US6077780A (en) * | 1997-12-03 | 2000-06-20 | Advanced Micro Devices, Inc. | Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure |
US6100184A (en) * | 1997-08-20 | 2000-08-08 | Sematech, Inc. | Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer |
US6107199A (en) * | 1998-10-24 | 2000-08-22 | International Business Machines Corporation | Method for improving the morphology of refractory metal thin films |
US6110530A (en) * | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
US6113771A (en) * | 1998-04-21 | 2000-09-05 | Applied Materials, Inc. | Electro deposition chemistry |
US6171661B1 (en) * | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
US6174812B1 (en) * | 1999-06-08 | 2001-01-16 | United Microelectronics Corp. | Copper damascene technology for ultra large scale integration circuits |
US6180523B1 (en) * | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6197688B1 (en) * | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
US6197181B1 (en) * | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
US6197364B1 (en) * | 1995-08-22 | 2001-03-06 | International Business Machines Corporation | Production of electroless Co(P) with designed coercivity |
US6228233B1 (en) * | 1998-11-30 | 2001-05-08 | Applied Materials, Inc. | Inflatable compliant bladder assembly |
US6242349B1 (en) * | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
US6245670B1 (en) * | 1999-02-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure |
US6251236B1 (en) * | 1998-11-30 | 2001-06-26 | Applied Materials, Inc. | Cathode contact ring for electrochemical deposition |
US6258707B1 (en) * | 1999-01-07 | 2001-07-10 | International Business Machines Corporation | Triple damascence tungsten-copper interconnect structure |
US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6258270B1 (en) * | 1997-01-07 | 2001-07-10 | Gkss-Forschungszentrum Geesthacht Gmbh | Filtration apparatus having channeled flow guide elements |
US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6261637B1 (en) * | 1995-12-15 | 2001-07-17 | Enthone-Omi, Inc. | Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication |
US6291082B1 (en) * | 2000-06-13 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of electroless ag layer formation for cu interconnects |
US6291348B1 (en) * | 2000-11-30 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed |
US6342733B1 (en) * | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
US6344410B1 (en) * | 1999-03-30 | 2002-02-05 | Advanced Micro Devices, Inc. | Manufacturing method for semiconductor metalization barrier |
US6416647B1 (en) * | 1998-04-21 | 2002-07-09 | Applied Materials, Inc. | Electro-chemical deposition cell for face-up processing of single semiconductor substrates |
US20020098711A1 (en) * | 2000-08-31 | 2002-07-25 | Klein Rita J. | Electroless deposition of doped noble metals and noble metal alloys |
US6431190B1 (en) * | 1998-07-13 | 2002-08-13 | Kokusai Electric Co., Ltd. | Fluid processing apparatus |
US6432819B1 (en) * | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US6436267B1 (en) * | 2000-08-29 | 2002-08-20 | Applied Materials, Inc. | Method for achieving copper fill of high aspect ratio interconnect features |
US6436816B1 (en) * | 1998-07-31 | 2002-08-20 | Industrial Technology Research Institute | Method of electroless plating copper on nitride barrier |
US6441492B1 (en) * | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
US6503834B1 (en) * | 2000-10-03 | 2003-01-07 | International Business Machines Corp. | Process to increase reliability CuBEOL structures |
US20030010645A1 (en) * | 2001-06-14 | 2003-01-16 | Mattson Technology, Inc. | Barrier enhancement process for copper interconnects |
US6516815B1 (en) * | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
US6528409B1 (en) * | 2002-04-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration |
US20030075808A1 (en) * | 2001-08-13 | 2003-04-24 | Hiroaki Inoue | Semiconductor device, method for manufacturing the same, and plating solution |
US6565729B2 (en) * | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US20030113576A1 (en) * | 2001-12-19 | 2003-06-19 | Intel Corporation | Electroless plating bath composition and method of using |
US20030116439A1 (en) * | 2001-12-21 | 2003-06-26 | International Business Machines Corporation | Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices |
US6588437B1 (en) * | 1999-11-15 | 2003-07-08 | Agere Systems Inc. | System and method for removal of material |
US20030134047A1 (en) * | 2002-01-16 | 2003-07-17 | Dubin Valery M | Apparatus and method for electroless spray deposition |
US20030141018A1 (en) * | 2002-01-28 | 2003-07-31 | Applied Materials, Inc. | Electroless deposition apparatus |
US6605874B2 (en) * | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
US6616967B1 (en) * | 2002-04-15 | 2003-09-09 | Texas Instruments Incorporated | Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process |
US6616772B2 (en) * | 2000-06-30 | 2003-09-09 | Lam Research Corporation | Methods for wafer proximity cleaning and drying |
US20030181040A1 (en) * | 2002-03-22 | 2003-09-25 | Igor Ivanov | Apparatus and method for electroless deposition of materials on semiconductor substrates |
US6680540B2 (en) * | 2000-03-08 | 2004-01-20 | Hitachi, Ltd. | Semiconductor device having cobalt alloy film with boron |
US6717189B2 (en) * | 2001-06-01 | 2004-04-06 | Ebara Corporation | Electroless plating liquid and semiconductor device |
US20040065540A1 (en) * | 2002-06-28 | 2004-04-08 | Novellus Systems, Inc. | Liquid treatment using thin liquid layer |
US20040096592A1 (en) * | 2002-11-19 | 2004-05-20 | Chebiam Ramanan V. | Electroless cobalt plating solution and plating techniques |
US6743473B1 (en) * | 2000-02-16 | 2004-06-01 | Applied Materials, Inc. | Chemical vapor deposition of barriers from novel precursors |
US20040113277A1 (en) * | 2002-12-11 | 2004-06-17 | Chiras Stefanie Ruth | Formation of aligned capped metal lines and interconnections in multilevel semiconductor structures |
US6756682B2 (en) * | 2002-05-29 | 2004-06-29 | Micron Technology, Inc. | High aspect ratio fill method and resulting structure |
US20040175509A1 (en) * | 2003-03-06 | 2004-09-09 | Artur Kolics | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper |
US6794288B1 (en) * | 2003-05-05 | 2004-09-21 | Blue29 Corporation | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation |
US20050090098A1 (en) * | 2003-10-27 | 2005-04-28 | Dubin Valery M. | Method for making a semiconductor device having increased conductive material reliability |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4232060A (en) * | 1979-01-22 | 1980-11-04 | Richardson Chemical Company | Method of preparing substrate surface for electroless plating and products produced thereby |
US4632857A (en) * | 1974-05-24 | 1986-12-30 | Richardson Chemical Company | Electrolessly plated product having a polymetallic catalytic film underlayer |
US4234628A (en) * | 1978-11-28 | 1980-11-18 | The Harshaw Chemical Company | Two-step preplate system for polymeric surfaces |
IT1130955B (en) * | 1980-03-11 | 1986-06-18 | Oronzio De Nora Impianti | PROCEDURE FOR THE FORMATION OF ELECTROCES ON THE SURFACES OF SEMI-PERMEABLE MEMBRANES AND ELECTRODE-MEMBRANE SYSTEMS SO PRODUCED |
US4868071A (en) | 1987-02-24 | 1989-09-19 | Polyonics Corporation | Thermally stable dual metal coated laminate products made from textured polyimide film |
US5322976A (en) * | 1987-02-24 | 1994-06-21 | Polyonics Corporation | Process for forming polyimide-metal laminates |
JPH07193214A (en) | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | Via-hole and its formation |
JPH07297543A (en) | 1994-04-25 | 1995-11-10 | Sumitomo Metal Mining Co Ltd | Metal-clad glass epoxy resin board for printed wiring board |
US5846598A (en) * | 1995-11-30 | 1998-12-08 | International Business Machines Corporation | Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating |
US5695810A (en) * | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
US5843538A (en) * | 1996-12-09 | 1998-12-01 | John L. Raymond | Method for electroless nickel plating of metal substrates |
US5969422A (en) * | 1997-05-15 | 1999-10-19 | Advanced Micro Devices, Inc. | Plated copper interconnect structure |
US5933757A (en) * | 1997-06-23 | 1999-08-03 | Lsi Logic Corporation | Etch process selective to cobalt silicide for formation of integrated circuit structures |
JP3874911B2 (en) | 1997-10-15 | 2007-01-31 | 株式会社Neomaxマテリアル | Plating method for micro plastic balls |
GB9722028D0 (en) | 1997-10-17 | 1997-12-17 | Shipley Company Ll C | Plating of polymers |
US6136693A (en) * | 1997-10-27 | 2000-10-24 | Chartered Semiconductor Manufacturing Ltd. | Method for planarized interconnect vias using electroless plating and CMP |
US6140234A (en) * | 1998-01-20 | 2000-10-31 | International Business Machines Corporation | Method to selectively fill recesses with conductive metal |
EP1112125B1 (en) * | 1998-06-30 | 2006-01-25 | Semitool, Inc. | Metallization structures for microelectronic applications and process for forming the structures |
US6165912A (en) * | 1998-09-17 | 2000-12-26 | Cfmt, Inc. | Electroless metal deposition of electronic components in an enclosable vessel |
US6136163A (en) * | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
US6323128B1 (en) * | 1999-05-26 | 2001-11-27 | International Business Machines Corporation | Method for forming Co-W-P-Au films |
US6153935A (en) * | 1999-09-30 | 2000-11-28 | International Business Machines Corporation | Dual etch stop/diffusion barrier for damascene interconnects |
JP2001355074A (en) * | 2000-04-10 | 2001-12-25 | Sony Corp | Electroless plating method, and apparatus thereof |
US6573606B2 (en) * | 2001-06-14 | 2003-06-03 | International Business Machines Corporation | Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect |
-
2002
- 2002-10-30 US US10/284,855 patent/US6821909B2/en not_active Expired - Fee Related
-
2004
- 2004-10-29 US US10/979,078 patent/US20050136185A1/en not_active Abandoned
Patent Citations (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2369620A (en) * | 1941-03-07 | 1945-02-13 | Battelle Development Corp | Method of coating cupreous metal with tin |
US3403035A (en) * | 1964-06-24 | 1968-09-24 | Process Res Company | Process for stabilizing autocatalytic metal plating solutions |
US3745039A (en) * | 1971-10-28 | 1973-07-10 | Rca Corp | Electroless cobalt plating bath and process |
US4397812A (en) * | 1974-05-24 | 1983-08-09 | Richardson Chemical Company | Electroless nickel polyalloys |
US4006047A (en) * | 1974-07-22 | 1977-02-01 | Amp Incorporated | Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates |
US3937857A (en) * | 1974-07-22 | 1976-02-10 | Amp Incorporated | Catalyst for electroless deposition of metals |
US4150177A (en) * | 1976-03-31 | 1979-04-17 | Massachusetts Institute Of Technology | Method for selectively nickeling a layer of polymerized polyester resin |
US4265943A (en) * | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
US4368223A (en) * | 1981-06-01 | 1983-01-11 | Asahi Glass Company, Ltd. | Process for preparing nickel layer |
US4810520A (en) * | 1987-09-23 | 1989-03-07 | Magnetic Peripherals Inc. | Method for controlling electroless magnetic plating |
US5147692A (en) * | 1990-05-08 | 1992-09-15 | Macdermid, Incorporated | Electroless plating of nickel onto surfaces such as copper or fused tungston |
US5235139A (en) * | 1990-09-12 | 1993-08-10 | Macdermid, Incorprated | Method for fabricating printed circuits |
US5248527A (en) * | 1991-03-01 | 1993-09-28 | C. Uyemura And Company, Limited | Process for electroless plating tin, lead or tin-lead alloy |
US5203911A (en) * | 1991-06-24 | 1993-04-20 | Shipley Company Inc. | Controlled electroless plating |
US5240497A (en) * | 1991-10-08 | 1993-08-31 | Cornell Research Foundation, Inc. | Alkaline free electroless deposition |
US5380560A (en) * | 1992-07-28 | 1995-01-10 | International Business Machines Corporation | Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition |
US5907790A (en) * | 1993-07-15 | 1999-05-25 | Astarix Inc. | Aluminum-palladium alloy for initiation of electroless plating |
US5510216A (en) * | 1993-08-25 | 1996-04-23 | Shipley Company Inc. | Selective metallization process |
US5384284A (en) * | 1993-10-01 | 1995-01-24 | Micron Semiconductor, Inc. | Method to form a low resistant bond pad interconnect |
US5415890A (en) * | 1994-01-03 | 1995-05-16 | Eaton Corporation | Modular apparatus and method for surface treatment of parts with liquid baths |
US5895810A (en) * | 1995-03-23 | 1999-04-20 | Biopure Corporation | Stable polymerized hemoglobin and use thereof |
US5882433A (en) * | 1995-05-23 | 1999-03-16 | Tokyo Electron Limited | Spin cleaning method |
US6197364B1 (en) * | 1995-08-22 | 2001-03-06 | International Business Machines Corporation | Production of electroless Co(P) with designed coercivity |
US5755859A (en) * | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
US5910340A (en) * | 1995-10-23 | 1999-06-08 | C. Uyemura & Co., Ltd. | Electroless nickel plating solution and method |
US6015724A (en) * | 1995-11-02 | 2000-01-18 | Semiconductor Energy Laboratory Co. | Manufacturing method of a semiconductor device |
US5648125A (en) * | 1995-11-16 | 1997-07-15 | Cane; Frank N. | Electroless plating process for the manufacture of printed circuit boards |
US5733816A (en) * | 1995-12-13 | 1998-03-31 | Micron Technology, Inc. | Method for depositing a tungsten layer on silicon |
US6261637B1 (en) * | 1995-12-15 | 2001-07-17 | Enthone-Omi, Inc. | Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication |
US6065424A (en) * | 1995-12-19 | 2000-05-23 | Cornell Research Foundation, Inc. | Electroless deposition of metal films with spray processor |
US5824599A (en) * | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
US5674787A (en) * | 1996-01-16 | 1997-10-07 | Sematech, Inc. | Selective electroless copper deposited interconnect plugs for ULSI applications |
US5891513A (en) * | 1996-01-16 | 1999-04-06 | Cornell Research Foundation | Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications |
US5614003A (en) * | 1996-02-26 | 1997-03-25 | Mallory, Jr.; Glenn O. | Method for producing electroless polyalloys |
US5904827A (en) * | 1996-10-15 | 1999-05-18 | Reynolds Tech Fabricators, Inc. | Plating cell with rotary wiper and megasonic transducer |
US6258270B1 (en) * | 1997-01-07 | 2001-07-10 | Gkss-Forschungszentrum Geesthacht Gmbh | Filtration apparatus having channeled flow guide elements |
US5913147A (en) * | 1997-01-21 | 1999-06-15 | Advanced Micro Devices, Inc. | Method for fabricating copper-aluminum metallization |
US5885749A (en) * | 1997-06-20 | 1999-03-23 | Clear Logic, Inc. | Method of customizing integrated circuits by selective secondary deposition of layer interconnect material |
US6100184A (en) * | 1997-08-20 | 2000-08-08 | Sematech, Inc. | Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer |
US6077780A (en) * | 1997-12-03 | 2000-06-20 | Advanced Micro Devices, Inc. | Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure |
US5932077A (en) * | 1998-02-09 | 1999-08-03 | Reynolds Tech Fabricators, Inc. | Plating cell with horizontal product load mechanism |
US6197688B1 (en) * | 1998-02-12 | 2001-03-06 | Motorola Inc. | Interconnect structure in a semiconductor device and method of formation |
US6171661B1 (en) * | 1998-02-25 | 2001-01-09 | Applied Materials, Inc. | Deposition of copper with increased adhesion |
US6197181B1 (en) * | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
US6565729B2 (en) * | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US6113771A (en) * | 1998-04-21 | 2000-09-05 | Applied Materials, Inc. | Electro deposition chemistry |
US6416647B1 (en) * | 1998-04-21 | 2002-07-09 | Applied Materials, Inc. | Electro-chemical deposition cell for face-up processing of single semiconductor substrates |
US6431190B1 (en) * | 1998-07-13 | 2002-08-13 | Kokusai Electric Co., Ltd. | Fluid processing apparatus |
US6436816B1 (en) * | 1998-07-31 | 2002-08-20 | Industrial Technology Research Institute | Method of electroless plating copper on nitride barrier |
US6180523B1 (en) * | 1998-10-13 | 2001-01-30 | Industrial Technology Research Institute | Copper metallization of USLI by electroless process |
US6107199A (en) * | 1998-10-24 | 2000-08-22 | International Business Machines Corporation | Method for improving the morphology of refractory metal thin films |
US6228233B1 (en) * | 1998-11-30 | 2001-05-08 | Applied Materials, Inc. | Inflatable compliant bladder assembly |
US6251236B1 (en) * | 1998-11-30 | 2001-06-26 | Applied Materials, Inc. | Cathode contact ring for electrochemical deposition |
US6258220B1 (en) * | 1998-11-30 | 2001-07-10 | Applied Materials, Inc. | Electro-chemical deposition system |
US6015747A (en) * | 1998-12-07 | 2000-01-18 | Advanced Micro Device | Method of metal/polysilicon gate formation in a field effect transistor |
US6242349B1 (en) * | 1998-12-09 | 2001-06-05 | Advanced Micro Devices, Inc. | Method of forming copper/copper alloy interconnection with reduced electromigration |
US6258707B1 (en) * | 1999-01-07 | 2001-07-10 | International Business Machines Corporation | Triple damascence tungsten-copper interconnect structure |
US6010962A (en) * | 1999-02-12 | 2000-01-04 | Taiwan Semiconductor Manufacturing Company | Copper chemical-mechanical-polishing (CMP) dishing |
US6245670B1 (en) * | 1999-02-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure |
US6344410B1 (en) * | 1999-03-30 | 2002-02-05 | Advanced Micro Devices, Inc. | Manufacturing method for semiconductor metalization barrier |
US6174812B1 (en) * | 1999-06-08 | 2001-01-16 | United Microelectronics Corp. | Copper damascene technology for ultra large scale integration circuits |
US6110530A (en) * | 1999-06-25 | 2000-08-29 | Applied Materials, Inc. | CVD method of depositing copper films by using improved organocopper precursor blend |
US6516815B1 (en) * | 1999-07-09 | 2003-02-11 | Applied Materials, Inc. | Edge bead removal/spin rinse dry (EBR/SRD) module |
US6258223B1 (en) * | 1999-07-09 | 2001-07-10 | Applied Materials, Inc. | In-situ electroless copper seed layer enhancement in an electroplating system |
US6342733B1 (en) * | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
US20020098681A1 (en) * | 1999-07-27 | 2002-07-25 | Chao-Kun Hu | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
US6441492B1 (en) * | 1999-09-10 | 2002-08-27 | James A. Cunningham | Diffusion barriers for copper interconnect systems |
US6432819B1 (en) * | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US6588437B1 (en) * | 1999-11-15 | 2003-07-08 | Agere Systems Inc. | System and method for removal of material |
US6743473B1 (en) * | 2000-02-16 | 2004-06-01 | Applied Materials, Inc. | Chemical vapor deposition of barriers from novel precursors |
US6680540B2 (en) * | 2000-03-08 | 2004-01-20 | Hitachi, Ltd. | Semiconductor device having cobalt alloy film with boron |
US6291082B1 (en) * | 2000-06-13 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of electroless ag layer formation for cu interconnects |
US6616772B2 (en) * | 2000-06-30 | 2003-09-09 | Lam Research Corporation | Methods for wafer proximity cleaning and drying |
US6436267B1 (en) * | 2000-08-29 | 2002-08-20 | Applied Materials, Inc. | Method for achieving copper fill of high aspect ratio interconnect features |
US20020098711A1 (en) * | 2000-08-31 | 2002-07-25 | Klein Rita J. | Electroless deposition of doped noble metals and noble metal alloys |
US6503834B1 (en) * | 2000-10-03 | 2003-01-07 | International Business Machines Corp. | Process to increase reliability CuBEOL structures |
US6291348B1 (en) * | 2000-11-30 | 2001-09-18 | Advanced Micro Devices, Inc. | Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed |
US6717189B2 (en) * | 2001-06-01 | 2004-04-06 | Ebara Corporation | Electroless plating liquid and semiconductor device |
US20030010645A1 (en) * | 2001-06-14 | 2003-01-16 | Mattson Technology, Inc. | Barrier enhancement process for copper interconnects |
US20030075808A1 (en) * | 2001-08-13 | 2003-04-24 | Hiroaki Inoue | Semiconductor device, method for manufacturing the same, and plating solution |
US6605874B2 (en) * | 2001-12-19 | 2003-08-12 | Intel Corporation | Method of making semiconductor device using an interconnect |
US20040038073A1 (en) * | 2001-12-19 | 2004-02-26 | Chebiam Ramanan V. | Electroless plating bath composition and method of using |
US20040035316A1 (en) * | 2001-12-19 | 2004-02-26 | Chebiam Ramanan V. | Electroless plating bath composition and method of using |
US20030113576A1 (en) * | 2001-12-19 | 2003-06-19 | Intel Corporation | Electroless plating bath composition and method of using |
US20030116439A1 (en) * | 2001-12-21 | 2003-06-26 | International Business Machines Corporation | Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices |
US20030134047A1 (en) * | 2002-01-16 | 2003-07-17 | Dubin Valery M | Apparatus and method for electroless spray deposition |
US20030141018A1 (en) * | 2002-01-28 | 2003-07-31 | Applied Materials, Inc. | Electroless deposition apparatus |
US20030181040A1 (en) * | 2002-03-22 | 2003-09-25 | Igor Ivanov | Apparatus and method for electroless deposition of materials on semiconductor substrates |
US6616967B1 (en) * | 2002-04-15 | 2003-09-09 | Texas Instruments Incorporated | Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process |
US6528409B1 (en) * | 2002-04-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration |
US6756682B2 (en) * | 2002-05-29 | 2004-06-29 | Micron Technology, Inc. | High aspect ratio fill method and resulting structure |
US6787450B2 (en) * | 2002-05-29 | 2004-09-07 | Micron Technology, Inc. | High aspect ratio fill method and resulting structure |
US20040065540A1 (en) * | 2002-06-28 | 2004-04-08 | Novellus Systems, Inc. | Liquid treatment using thin liquid layer |
US20040096592A1 (en) * | 2002-11-19 | 2004-05-20 | Chebiam Ramanan V. | Electroless cobalt plating solution and plating techniques |
US20040113277A1 (en) * | 2002-12-11 | 2004-06-17 | Chiras Stefanie Ruth | Formation of aligned capped metal lines and interconnections in multilevel semiconductor structures |
US20040175509A1 (en) * | 2003-03-06 | 2004-09-09 | Artur Kolics | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper |
US6794288B1 (en) * | 2003-05-05 | 2004-09-21 | Blue29 Corporation | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation |
US20050090098A1 (en) * | 2003-10-27 | 2005-04-28 | Dubin Valery M. | Method for making a semiconductor device having increased conductive material reliability |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030190426A1 (en) * | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US20050124158A1 (en) * | 2003-10-15 | 2005-06-09 | Lopatin Sergey D. | Silver under-layers for electroless cobalt alloys |
US20050095830A1 (en) * | 2003-10-17 | 2005-05-05 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
US20050136193A1 (en) * | 2003-10-17 | 2005-06-23 | Applied Materials, Inc. | Selective self-initiating electroless capping of copper with cobalt-containing alloys |
US20050101130A1 (en) * | 2003-11-07 | 2005-05-12 | Applied Materials, Inc. | Method and tool of chemical doping CoW alloys with Re for increasing barrier properties of electroless capping layers for IC Cu interconnects |
US20050161338A1 (en) * | 2004-01-26 | 2005-07-28 | Applied Materials, Inc. | Electroless cobalt alloy deposition process |
US20050170650A1 (en) * | 2004-01-26 | 2005-08-04 | Hongbin Fang | Electroless palladium nitrate activation prior to cobalt-alloy deposition |
US20050253268A1 (en) * | 2004-04-22 | 2005-11-17 | Shao-Ta Hsu | Method and structure for improving adhesion between intermetal dielectric layer and cap layer |
US20060240187A1 (en) * | 2005-01-27 | 2006-10-26 | Applied Materials, Inc. | Deposition of an intermediate catalytic layer on a barrier layer for copper metallization |
US20060251800A1 (en) * | 2005-03-18 | 2006-11-09 | Weidman Timothy W | Contact metallization scheme using a barrier layer over a silicide layer |
US20100107927A1 (en) * | 2005-03-18 | 2010-05-06 | Stewart Michael P | Electroless deposition process on a silicon contact |
US20060252252A1 (en) * | 2005-03-18 | 2006-11-09 | Zhize Zhu | Electroless deposition processes and compositions for forming interconnects |
US20060264043A1 (en) * | 2005-03-18 | 2006-11-23 | Stewart Michael P | Electroless deposition process on a silicon contact |
US20060246699A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Process for electroless copper deposition on a ruthenium seed |
US7651934B2 (en) | 2005-03-18 | 2010-01-26 | Applied Materials, Inc. | Process for electroless copper deposition |
US8308858B2 (en) | 2005-03-18 | 2012-11-13 | Applied Materials, Inc. | Electroless deposition process on a silicon contact |
US7659203B2 (en) | 2005-03-18 | 2010-02-09 | Applied Materials, Inc. | Electroless deposition process on a silicon contact |
US20070071888A1 (en) * | 2005-09-21 | 2007-03-29 | Arulkumar Shanmugasundram | Method and apparatus for forming device features in an integrated electroless deposition system |
US20080003797A1 (en) * | 2006-06-29 | 2008-01-03 | Hynix Semiconductor Inc. | Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same |
US7563718B2 (en) * | 2006-06-29 | 2009-07-21 | Hynix Semiconductor Inc. | Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same |
US20080032472A1 (en) * | 2006-08-01 | 2008-02-07 | Chen-Hua Yu | Methods for improving uniformity of cap layers |
US8987085B2 (en) * | 2006-08-01 | 2015-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for improving uniformity of cap layers |
US20090017624A1 (en) * | 2007-07-09 | 2009-01-15 | Chih-Hung Liao | Nodule Defect Reduction in Electroless Plating |
US7657003B2 (en) * | 2007-09-04 | 2010-02-02 | Thermo Niton Analyzers Llc | X-ray tube with enhanced small spot cathode and methods for manufacture thereof |
US20090060142A1 (en) * | 2007-09-04 | 2009-03-05 | Adams William L | X-Ray Tube with Enhanced Small Spot Cathode and Methods for Manufacture Thereof |
US20130224511A1 (en) * | 2012-02-24 | 2013-08-29 | Artur Kolics | Methods and materials for anchoring gapfill metals |
US8895441B2 (en) * | 2012-02-24 | 2014-11-25 | Lam Research Corporation | Methods and materials for anchoring gapfill metals |
US9382627B2 (en) | 2012-02-24 | 2016-07-05 | Lam Research Corporation | Methods and materials for anchoring gapfill metals |
WO2014179087A1 (en) * | 2013-05-01 | 2014-11-06 | Applied Materials, Inc. | Cobalt removal for chamber clean or pre-clean process |
US9528183B2 (en) | 2013-05-01 | 2016-12-27 | Applied Materials, Inc. | Cobalt removal for chamber clean or pre-clean process |
US20150140812A1 (en) * | 2013-11-16 | 2015-05-21 | Applied Materials, Inc. | Methods for dry etching cobalt metal using fluorine radicals |
US10163656B2 (en) * | 2013-11-16 | 2018-12-25 | Applied Materials, Inc. | Methods for dry etching cobalt metal using fluorine radicals |
Also Published As
Publication number | Publication date |
---|---|
US6821909B2 (en) | 2004-11-23 |
US20040087141A1 (en) | 2004-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6821909B2 (en) | Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application | |
US6899816B2 (en) | Electroless deposition method | |
US6905622B2 (en) | Electroless deposition method | |
US20030190426A1 (en) | Electroless deposition method | |
US7205228B2 (en) | Selective metal encapsulation schemes | |
US8771804B2 (en) | Processes and systems for engineering a copper surface for selective metal deposition | |
US8241701B2 (en) | Processes and systems for engineering a barrier surface for copper deposition | |
US8747960B2 (en) | Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide | |
US7262504B2 (en) | Multiple stage electroless deposition of a metal layer | |
US8415261B1 (en) | Capping before barrier-removal IC fabrication method | |
US7405157B1 (en) | Methods for the electrochemical deposition of copper onto a barrier layer of a work piece | |
US20070071888A1 (en) | Method and apparatus for forming device features in an integrated electroless deposition system | |
TWI393186B (en) | Processes and integrated systems for engineering a substrate surface for metal deposition | |
US20020064592A1 (en) | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects | |
US20050014359A1 (en) | Semiconductor device manufacturing method | |
US6284652B1 (en) | Adhesion promotion method for electro-chemical copper metallization in IC applications | |
US7566661B2 (en) | Electroless treatment of noble metal barrier and adhesion layer | |
US7064065B2 (en) | Silver under-layers for electroless cobalt alloys | |
KR101506352B1 (en) | Processes and integrated systems for engineering a substrate surface for metal deposition | |
US7442267B1 (en) | Anneal of ruthenium seed layer to improve copper plating | |
JP2007180496A (en) | Manufacturing method of metallic seed layer | |
JP2005536628A (en) | Electroless deposition method | |
TWI283272B (en) | Method of processing a substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:RAMANATHAN, SIVAKAMI;PADHI, DEENESH;GANDIKOTA, SRINIVAS;AND OTHERS;REEL/FRAME:015959/0095;SIGNING DATES FROM 20021028 TO 20021030 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |