US20050211382A1 - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
- Publication number
- US20050211382A1 US20050211382A1 US11/137,538 US13753805A US2005211382A1 US 20050211382 A1 US20050211382 A1 US 20050211382A1 US 13753805 A US13753805 A US 13753805A US 2005211382 A1 US2005211382 A1 US 2005211382A1
- Authority
- US
- United States
- Prior art keywords
- waveguide
- microwave
- cylindrical
- radial
- cylindrical waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11-mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.
Description
- The present invention relates to a plasma processing apparatus utilizing a microwave.
- Conventionally, there is known a plasma processing apparatus which includes a flat antenna, as shown in
FIG. 18 . - This
plasma processing apparatus 71 comprises aprocessing container 73 generally shaped to be cylindrical with a bottom and asilica plate 75 formed on the ceiling part of theprocessing container 73 in an airtight manner thereby to define a closed processing space S in theprocessing container 73. Accommodated in theprocessing container 73 is a mounting table 77 on which a semiconductor wafer W is mounted. This mounting table 77 is connected to a bias high-frequency power source 79 through power lines. Further, agas nozzle 81 is arranged in the sidewall of theprocessing container 73, for introducing a process gas into the container. Theprocessing container 73 is also provided, on a bottom thereof, withexhaust ports 85 connected with a not-shown vacuum pump. - On the other hand, a
flat antenna member 87 is arranged on the top of thesilica plate 75 sealing up the upside of theprocessing container 73. Theflat antenna member 87 is constituted as a bottom plate of aradial waveguide box 89 consisting of a low and disc-shaped hollow cylindrical container. Theflat antenna member 87 is attached to a top surface of thesilica plate 75. Acoaxial waveguide 93 has itsouter tube 93A connected to the center of an upper face of the disc-shapedradial waveguide box 89. Thecoaxial waveguide 93 is also connected, at the other end, with amicrowave generator 91. In thecoaxial waveguide 93, aninside cable 93B is connected to the center of the disc-shaped antenna member 87. - The disc-
shaped antenna member 87 is made from a copper plate having a number ofslits 95 formed therein. Further, in theradial waveguide box 89, adielectric material 97 of predetermined dielectric constant is accommodated to shorten the wavelength of a microwave thereby accomplishing a short guide wavelength. - With the above structure, a microwave generated in the
microwave generator 91 is propagated in thecoaxial waveguide 93 and successively dispersed in theradial waveguide box 89 in the radial direction. Then, the microwave is discharged downward from theslits 95 of theantenna member 87 thereby to form a plasma in theprocessing container 73. - However, since cables inside the coaxial waveguide are easy to be heated in the
above processing apparatus 71, such an overheating operation may cause an abnormal discharging of electricity in the apparatus. In order to prevent the occurrence of abnormal discharging, it is necessary to provide the “so-slender” inside cable with a cooling mechanism. However, this countermeasure would cause the structure of the apparatus to be complicated with an excessive increase in manufacturing cost. Additionally, since the countermeasure requires a supporting structure for the inside cable, a new problem arises in that it might take a great deal of time to adjust an impedance accompanied by the provision of the supporting structure. - Further, due to the generation of uneven electric field formed below the
flat antenna member 87, theprocessing apparatus 71 has a problem of producing an uneven treatment on the wafer W. In detail, an electric field emitted downward from theslits 95 of theflat antenna member 87 is reflected on an inner wall of theprocessing container 73 to produce an uneven electric field in the processing container. Thus, the above processing apparatus betrays an uneven treatment in processing wafers, especially, large-diameter wafers. - In order to solve the above-mentioned problems, the object of the present invention is to provide a plasma processing apparatus which is capable of prevention of heat-generation of the cable inside the coaxial waveguide and which can form a uniform electromagnetic field in the processing container.
- The first feature of the present invention resides in a plasma processing apparatus which comprises:
- a processing container shaped to be a cylinder with a bottom, the processing container having, inside thereof, a mounting table for mounting an object to be processed thereon;
- a lid body made of a dielectric material to cover an upper opening of the processing container;
- a microwave supplier for supplying a microwave;
- a cylindrical waveguide having one end connected to the microwave supplier, the cylindrical waveguide being formed so as to extend from the microwave supplier toward the lid body thereby defining a waveguide space in the cylindrical waveguide;
- a radial waveguide box connected to the other end of the cylindrical waveguide and also formed so as to extend from the other end of the cylindrical waveguide radially outward in form of a flange and successively extend downward therefrom in form of a sidewall, the radial waveguide box defining another waveguide space therein; and
- a slot antenna arranged along the lid body to cover a lower opening of the radial waveguide box, the slot antenna having a plurality of slots formed therein.
- With the above constitution, it becomes unnecessary to consider the heat-generation of cables inside the coaxial waveguide and also possible to establish a uniform electromagnetic field in the processing container.
- The second feature of the present invention resides in that the slot antenna is provided, at its part opposing an opening of the other end of the cylindrical waveguide, with a bump projecting toward the cylindrical waveguide inside the radial waveguide box. With this arrangement, it is possible to accomplish both introduction and propagation of a microwave from the cylindrical waveguide into the radial waveguide box effectively.
- The third feature of the present invention resides in that the bump is shaped to be generally conical.
- The fourth feature of the present invention resides in that the microwave to be propagated from the microwave supplier to the radial waveguide box through the cylindrical waveguide box is identical to a microwave in TM01 mode.
- The fifth feature of the present invention resides in that the microwave to be propagated from the microwave supplier to the radial waveguide box through the cylindrical waveguide box is identical to a microwave in TE11 mode.
- The sixth feature of the present invention resides in that the plasma processing apparatus further comprises a circularly-polarized wave converter which is arranged in the cylindrical waveguide between the microwave supplier and the radial waveguide box to rotate the microwave in TE11 mode about an axis of the cylindrical waveguide thereby transmitting a resulting circularly-polarized wave to the radial waveguide box. With the structure mentioned above, it is possible to make an electromagnetic field in the processing container uniform, thereby preventing an unevenness in producing a plasma.
- The seventh feature of the present invention resides in that the slot antenna is a radiation type of antenna.
- The eighth feature of the present invention resides in that the slots of the slot antenna are arranged coaxially.
- The ninth feature of the present invention resides in that the slots of the slot antenna are arranged spirally.
- The tenth feature of the present invention resides in that the slot antenna is a leak type of antenna.
- The eleventh feature of the present invention resides in that the slots of the slot antenna are arranged coaxially.
- The twelfth feature of the present invention resides in that the slots of the slot antenna are arranged spirally.
- The thirteenth feature of the present invention resides in that the slots of the slot antenna are arranged on a periphery of a polygon.
- The fourteenth feature of the present invention resides in that the slots of the slot antenna are arranged on radiation lines
- The fifteenth feature of the present invention resides in that a periphery between the slot antenna and the processing container has a absorbing member arranged to absorb a high frequency wave.
- The sixteenth feature of the present invention resides in that the slot antenna is held by struts each made of a dielectric material. With this structure, it is possible to produce a uniform plasma.
- The seventeenth feature of the present invention resides in that an interior of the radial waveguide box is filled up with a dielectric material with this structure, it is possible to prevent a deformation of the slot antenna.
- The eighteenth feature of the present invention resides in that an outer periphery inside the radial waveguide box has a absorbing member arranged to absorb a high frequency wave.
- The nineteenth feature of the present invention resides in that the plasma processing apparatus further comprises, between the microwave supplier and the cylindrical waveguide:
- a rectangular waveguide extending from the microwave supplier;
- a circular-and-rectangular converter arranged between the rectangular waveguide and the cylindrical waveguide; and
- a cylindrical dummy load having its one end connected to the cylindrical waveguide between the circular-and-rectangular converter and the circularly-polarized wave converter, the other end of the cylindrical dummy load having a microwave absorber.
- The twentieth feature of the present invention resides in that the dummy load is provided, at its connecting part with the cylindrical waveguide, with a partition wall which separates an interior of the cylindrical waveguide and an interior of the dummy load and has a slit formed to be parallel with an axial direction of the cylindrical waveguide.
- The twenty-first feature of the present invention resides in that the plasma processing apparatus further comprises a rod-shaped reflector arranged in the waveguide between the cylindrical waveguide and the circular-and-rectangular converter, the rod-shaped reflector consisting of a conductor bridged in a direction substantially perpendicular to an axis of the cylindrical waveguide and substantially perpendicular to an extending direction of the dummy load.
- The twenty-second feature of the present invention resides in that the reflector is a plate body along a plane containing the axis of the cylindrical waveguide.
- The twenty-third feature of the present invention resides in that an axis of the dummy load is arranged in a position apart from the reflector toward the circularly-polarized wave converter by a quarter of guide wavelength of a standing wave reflected by the reflector.
- The twenty-fourth feature of the present invention resides in that the plasma processing apparatus further comprises a tuner arranged in the cylindrical waveguide between the circularly-polarized wave and the radial waveguide box to adjust an impedance in the cylindrical waveguide thereby to reflect a microwave, which has been returned by reflection of the radial waveguide box, toward the radial waveguide box.
- The twenty-fifth feature of the present invention resides in that the tuner comprises:
- a plurality of stubs projecting from an inner circumferential wall of the cylindrical waveguide inwardly in a radial direction thereof, with respective adjustable projecting amounts;
- a stub driver for driving the stubs in the radial direction;
- a detector arranged inside the cylindrical waveguide between the stubs and the circularly-polarized converter to detect an intensity of electromagnetic field of a microwave in the cylindrical waveguide; and
- a controller for driving the stub driver on a basis of the intensity of electromagnetic field of the microwave detected by the detector thereby to change respective positions of the stubs in the radial direction for adjustment of an impedance, the controller for controlling the microwave, which has been returned from the part of the radial waveguide box, so as to reflect toward the radial waveguide box.
- The twenty-sixth feature of the present invention resides in that the stubs are complete in twelve stubs which are arranged on an inner circumferential face of the cylindrical waveguide and which consist of four stubs arranged at regular intervals in a circumferential direction of the cylindrical waveguide for each level and also lined three deep along an axial direction of the cylindrical waveguide.
- The twenty-seventh feature of the present invention resides in a plasma processing method for a plasma processing apparatus. In this method, the plasma processing apparatus includes: a processing container accommodating an object to be processed therein and having an upper opening covered by a lid body made of a dielectric material; a microwave supplier for supplying a microwave; a cylindrical waveguide having one end connected to the microwave supplier, the cylindrical waveguide being formed so as to extend from the microwave supplier toward the lid body thereby defining a waveguide space in the cylindrical waveguide; a radial waveguide box connected to the other end of the cylindrical waveguide and also formed so as to extend from the other end of the cylindrical waveguide radially outward and successively extend downward therefrom in form of a sidewall, the radial waveguide box defining another waveguide space therein; a slot antenna adapted so as to cover a lower opening of the radial waveguide box; and a circularly-polarized wave converter for rotating a microwave in TE11 mode supplied from the microwave supplier about an axis of the cylindrical waveguide thereby transmitting the microwave as a circularly-polarized wave to the radial waveguide box. This plasma processing method comprises the steps of:
- rotating the microwave in TE11 mode supplied from the microwave supplier about the axis of the cylindrical waveguide thereby transmitting the microwave as the circularly-polarized wave to the radial waveguide box;
- monitoring a microwave which has been reflected by the part of the radial waveguide box and subsequently returned therefrom;
- tuning the so-reflected microwave on a basis of a result at the monitoring step; and
- producing a uniform plasma in the processing container by the tuning step.
-
FIG. 1 is a longitudinal sectional view showing a plasma processing apparatus in accordance with the first embodiment of the present invention; -
FIG. 2 is a sectional view taken along a line II-II ofFIG. 1 ; -
FIG. 3 is a view showing one example of a radiation type slot antenna; -
FIG. 4 is a view showing another example of the radiation type slot antenna; -
FIG. 5 is a view showing one example of a leak type slot antenna; -
FIG. 6 is a view showing another example of the leak type slot antenna; -
FIG. 7 is a view showing a further example of the leak type slot antenna; -
FIG. 8 is a view showing a further example of the leak type slot antenna; -
FIG. 9 is a sectional view showing the propagation state of a microwave in TE mode at a connecting part between a cylindrical waveguide and a disc-shaped radial waveguidebox; -
FIG. 10 is a plan view showing a condition that the microwave in TE mode is being propagated; -
FIG. 11 is a diagram for explanation of a problem to be solved by the second embodiment of the present invention; -
FIG. 12 is a partially-cutaway plan view showing the plasma processing apparatus in accordance with the second embodiment of the present invention; -
FIG. 13 is a partially-cutaway side view showing the plasma processing apparatus in accordance with the second embodiment of the present invention; -
FIG. 14 is a view showing the function of a dummy load of the plasma processing apparatus shown inFIG. 12 ; -
FIG. 15 is a view showing the distribution of an ionic saturated current in a condition that the dummy load does not function in the plasma processing apparatus shown inFIG. 12 ; -
FIG. 16 is a view showing the distribution of an ionic saturated current in a condition that the dummy load functions in the plasma processing apparatus shown inFIG. 12 ;. -
FIG. 17 is a partially-cutaway plan view showing the plasma processing apparatus in accordance with the third embodiment of the present invention; and -
FIG. 18 is a longitudinal sectional view of the conventional plasma processing apparatus. - With reference to attached drawings, a plasma processing apparatus in accordance with one embodiment of the present invention will be described below, in detail.
FIG. 1 is a sectional view of an example of the plasma processing apparatus of the present invention.FIG. 2 is a view showing a section of a circularly polarized wave converter, taken along a line II-II ofFIG. 1 . - Although the plasma processing apparatus is embodied by a plasma etching apparatus in this embodiment, it is a matter of course that the present invention is not limited to this example only. The
plasma etching apparatus 2 includes aprocessing container 4 having its sidewall and bottom made of a conductive material, such as aluminum, and shaped to be a cylinder with a bottom as a whole. The ceiling part of theprocessing container 4 is opened. Asilica plate 8 having a thickness to endure a vacuum pressure is disposed on the opened ceiling part through a sealingmember 6, such as O-ring, in an airtight manner; thereby to form a sealed processing space S in the container. - In the
processing container 4, a mounting table 10 is accommodated to mount a semiconductor wafer W as an object to be processed, on a top surface of the table. Using “Alumite-processed” aluminum, the mounting table 10 is formed in the shape of a general column which is provided, at a center thereof, with a flattened projection. The lower part of the mounting table 10 is supported by a supporting table 12 shaped to be columnar by aluminum as well. The supporting table 12 is mounted on the bottom of theprocessing container 4 through aninsulator 14. - On the top surface of the mounting table 10, there are provided an electrostatic chuck (not shown) and a clamping mechanism (not shown) for holding a wafer. The mounting table 10 is connected to a
matching box 18 and a “bias” high-frequency power source 20. The supporting table 12 for supporting the mounting table 10 is provided with a coolingjacket 22 for passage of a cooling water for cooling a wafer at the plasma processing. - Arranged in the sidewall of the
processing container 4 is agas nozzle 24 which is made of a silica pipe, for introducing an etching gas as the processing gas into the container. Thenozzle 24 is connected to a processing-gas source 32 through agas supply path 26 interposing a mass-flow controller 28 and a closingvalve 30 therein. - On the periphery of the sidewall of the
processing container 4, there is provided, along the circumferential direction, a magnetic-field generator 34, such as electromagnetic coil and permanent magnet, which generates a magnetic field in the processing space S to confine a so-produced plasma therein. Note, the magnetic-field generator 34 is not always required to produce a plasma and therefore, the generator may be eliminated in the modification. - The
processing container 4 is also provided, at a bottom thereof, withexhaust ports 36 which are connected to a not-shown vacuum pump for allowing an interior of theprocessing container 4 to be evacuated into a designated pressure. - A
microwave generator 50 is arranged above thesilica plate 8 of theprocessing container 4. Acylindrical waveguide 52 is connected to themicrowave generator 50 so that a microwave generated by thegenerator 50 can be propagated in thewaveguide 52. As to the microwave, there can be employed microwaves in TM01 mode and TE11 mode. Particularly, it is desirable to use a circularly polarized microwave in TE11 mode in view of preventing an unevenness in producing a plasma. The operation in case of using the microwave in TE11 mode will be described as follows. - A
radial waveguide box 54 is connected to thecylindrical waveguide 52. A circularly-polarizedwave converter 56 is disposed between theradial waveguide box 54 and themicrowave generator 50. Although there exist various kinds of circularly-polarized wave converters, this embodiment employs a circularly-polarized wave converter that, as shown inFIG. 2 , two metalliccolumnar projections 58 are arranged on an inside wall of the cylindrical waveguide so as to face each other in one or plural pairs in the axial direction. Thecolumnar projections 58 are positioned in respective directions at an angle of 45 with a main direction of an electric field of the TE11-mode microwave propagated from the microwave generator. This circularly-polarized wave converter rotates the main direction of an electric field of the TE11-mode microwave from themicrowave generator 50, about the axis of the cylindrical waveguide as a rotational center. - Being connected to the lower end of the
cylindrical waveguide 52, theradial waveguide box 54 has aflange part 56 extending from the lower end of thecylindrical waveguide 52 outward in the radial direction and awall part 58 extending from the outer margin of theflange part 56 downward toward thesilica plate 8. On the lower opening of theradial waveguide box 54, aslot antenna 60 in the form of a disc-shaped copper plate is fitted so as to overlay the above opening thereby to define a waveguide space therein. Theslot antenna 60 is held bystruts 130 of dielectric materials projecting from theflange part 56 downward, thereby preventing a deformation of the antenna. - This disc-shaped
slot antenna 60, which is a type of radiation antenna, has a structure similar to that of a “microwave” flat antenna to be used for communication and produces a plasma by a microwave radiated from the antenna plate. In theslot antenna 60, the interval of slots is set to λg/2 or λg (λg: guide wavelength) both exhibiting a high efficiency in radiating a microwave. In this embodiment, as shown inFIG. 3 , many pairs ofslots 101 in general V-shaped arrangement are formed on concentric circles on the slot antenna. Note, as the antenna of radiation type, there may be recommended aslot antenna 105 where many pairs ofslots 103 in general V-shaped arrangement are formed in a spiral manner, as shown inFIG. 4 . - Alternatively, the slot antenna used in this apparatus may be represented by a leak type of antenna that produces a plasma by a microwave leaking out of the antenna. The interval of slots in this leak-type antenna is normally from λ/3 to λ/40 or thereabout, which is narrower than that of the radiation-type antenna, as shown with a
slot antenna 107 ofFIG. 5 where a number ofslots 109 are arranged on concentric circles. As to the leak-type slot antenna, there exist aslot antenna 111 ofFIG. 6 having a number ofslots 113 formed in spiral, aslot antenna 115 ofFIG. 7 having a number ofslots 117 formed in hexagonal and aslot antenna 119 ofFIG. 8 having a number ofslots 121 formed in radial. - Inside the
radial waveguide box 54, ametallic bump 64 is formed at the center of the disc-shapedantenna member 60. Thisbump 64 is shaped so as to be a cone projecting toward the lower opening of thecylindrical waveguide 52 and also having a spherical tip. Owing to this provision of thebump 64, it is possible to guide and propagate an electromagnetic field, which has been propagated in thecylindrical waveguide 52, into theradial waveguide box 54. - A space defined by the
radial waveguide box 54 and the disc-shapedantenna member 60 is filled by adielectric material 66. In the circumferential part between theslot antenna 60 and theprocessing container 4, anabsorber 68 for absorbing a high-frequency wave is arranged to prevent the reflection of an electromagnetic field. Such an absorber may be arranged in an outer circumferential part inside theradial waveguide box 54. - Next, the operation of the above-constructed apparatus of the embodiment will be described. First, a semiconductor wafer W is transported through a not-shown gate valve by a transfer arm and accommodated in the
processing container 4. Then, by moving lifter pins (not shown) up and down, the wafer W is mounted on a mounting surface of the mounting table 10. Next, an etching gas whose flow rate is controlled is supplied from thegas nozzle 24 while a pressure in theprocessing container 4 is maintained to a designated pressure. At the same time, a microwave generated from themicrowave generator 50 is introduced into the processing space S to produce a plasma for etching. During this operation, the application of a bias high-frequency power on the mounting table 10 allows an electrically-negative potential to be generated on the mounting table 10, thereby allowing ions to be extracted from the plasma effectively. Note, themagnetic field generator 34 on the sidewall of theprocessing container 4 is provided to generate a magnetic field for confining the plasma in the container. Therefore, it is possible to produce a plasma by the microwave from the disc-shapedantenna member 60, irrespective of the presence of the magnetic field generator. - In the above-mentioned structure, the “TE11 mode” microwave generated from the
microwave generator 50 reaches the circularly-polarizedwave converter 56 through thecylindrical waveguide 52. There, the “TE11 mode” microwave is rotated about the axis of thecylindrical waveguide 52 and reaches the waveguide's connecting part with theradial waveguide box 54. At this connecting part, as shown in FIG. 9, a horizontal electric field E of the “TE11 mode” microwave is divided into left and right by thebump 64 and subsequently propagated toward the periphery of the radial waveguide box while changing the direction of the electric field vertically. Hereat, the so-divided electric fields are deviated from each other by an angle of 180°,on both sides of thebump 64. Then, the microwave propagated toward the periphery generates an electromagnetic field in the processing space beneath the disc-shapedslot antenna 60, so that the plasma is produced by the above electromagnetic field. - Hereat, since the microwave propagated in the
cylindrical waveguide 52 is in the TE mode, an electric field F generated in theprocessing container 4 through the disc-shapedslot antenna 60 is unevenly and strongly distributed in the direction of the electric field E in thecylindrical waveguide 52, as shown inFIG. 10 . Despite that, since the microwave propagated in thecylindrical waveguide 52 rotates about the axis of the cylindrical waveguide, the intensive electric field (parts) F is rotated as well. Therefore, in the processing space S below the disc-shapedslot antenna 60, an intensity of the electromagnetic field is so equalized that an even and uniform plasma can be produced over a wide range in the space. Accordingly, when processing even a large-diameter wafer, it is possible to accomplish a uniform processing in the surface of the wafer. - As mentioned above, this plasma processing apparatus includes the
processing container 4 shaped to be a cylinder with a bottom and having, inside thereof, the mounting table 10 for mounting the wafer W thereon, thesilica plate 8 for covering the upper opening of theprocessing container 4 in an airtight manner, themicrowave supplier 50 for supplying the “TE11 mode” microwave, thecylindrical waveguide 52 having one end connected to themicrowave supplier 50 to extend toward thesilica plate 8 and also defining a waveguide space therein, theradial waveguide box 54 connected to the other end of thecylindrical waveguide 52 and also shaped to extend from the other end of thecylindrical waveguide 52 radially outward thereby forming a flange and successively extend toward the lid body downward thereby forming a sidewall and defining a waveguide space therein, the disc-shapedslot antenna 60 arranged along thesilica plate 8 to cover the lower opening of theradial waveguide box 54 and having theplural slots 101, and the circularly-polarizedwave converter 56 disposed in thecylindrical waveguide 52 between themicrowave supplier 50 and theradial waveguide box 54 to rotate the “TE11 mode” microwave provided from themicrowave supplier 50 about the axis of thecylindrical waveguide 52 and further send the rotating microwave to theradial waveguide box 54. Therefore, it is possible to rotate the “TE11 mode” microwave, which has been propagated in thecylindrical waveguide 52, about the axis of the cylindrical waveguide and also possible to cause the microwave having its phase reversed to be propagated toward the periphery of theradial waveguide box 54. Accordingly, in the processing space S below the disc-shapedslot antenna 60, it is possible to make an intensity of plasma even and uniform over a wide range in the space. Thus, when processing even a large-diameter wafer, it is possible to accomplish a uniform processing in the surface of the wafer. Additionally, it is possible to prevent cables inside the coaxial waveguide from being heated. - Although this plasma processing apparatus is capable of producing a uniform plasma in the processing space as mentioned above, there has been found a slight unevenness in the distribution of plasma in accordance with a more detailed measurement. It is believed that this phenomenon comes from the following reasons. That is, as shown in
FIG. 11 , a “TE11 mode” travelingwave 155 falling in an uppercylindrical waveguide 151 is rotated in a clockwise direction by the circularly-polarizedwave converter 56 and falls in a lowercylindrical waveguide 153 while rotating as shown with areference numeral 157. Thismicrowave 157 is divided into left and right by thebump 64 and directs toward the periphery of theradial waveguide box 54, so that the microwave is propagated into the processing space through the disc-shapedslot antenna 60. Nevertheless, this microwave is extremely partially reflected by theslot antenna 60 in the processing container, so that the so-reflected microwave is propagated upward in the lowercylindrical waveguide 153 while retracing in the opposite route, as shown with areference numeral 159. When this microwave reaches the uppercylindrical waveguide 151 through the circularly-polarizedwave converter 56, it becomes a “TE11 mode” microwave that does not rotate, as shown with areference numeral 161. This microwave is reflected on a waveguide's connectingpart 173 with arectangular waveguide 171, so that the phase of microwave is reversed. Then, the so-reflected microwave as a traveling wave, falls in thecylindrical waveguide 151, as shown with a reference numeral 363. Next, by passing through the circularly-polarizedwave converter 56 again, the microwave is rotated and falls in the lowercylindrical waveguide 153, as shown with areference numeral 165. Here, due to a plane of polarization different from that of the travelingwave 155 by an angle of 90° themicrowave 165 rotates in the counter-clockwise direction against the rotating direction of themicrowave 157. In this way, it is supposed that the distribution of microwave becomes uneven because themicrowave 165 in the counter-clockwise direction interferes with theproper microwave 157 in the clockwise direction. - Provided to improve such a drawback is a
plasma processing apparatus 200 of the second embodiment which is shown in FIGS. 12 to 14. - In
FIG. 12 ,reference numeral 201 designates a rectangular waveguide. Therectangular waveguide 201 is connected to a not-shown microwave generator. Therectangular waveguide 201 is bent at acorner part 203 by an angle of 90° and further connected to a circular-and-rectangular converter 205. Acylindrical waveguide 207 is connected to the circular-and-rectangular converter 205. Below thecylindrical waveguide 207, there is provided a circularly-polarizedwave converter 209 which rotates a microwave in TE11 mode about an axis of the converter. A flange-shapedradial waveguide box 211 is connected to the lower part of the circularly-polarizedwave converter 209 succeeding thecylindrical waveguide 207, allowing a microwave to be propagated from the slot antenna on a lower face of theradial waveguide box 211 into the processing container. - In the above plasma processing apparatus, a
dummy load 215 in the form of a rectangular cylinder is arranged on the upper part of thecylindrical waveguide 207, in the vicinity of a waveguide's connectingpart 213 with the circular-and-rectangular converter 205. Thisdummy load 215 extends in a direction perpendicular to the axis of thecylindrical waveguide 207, at a position of a distance L away from the connecting part between thecylindrical waveguide 207 and the circular-and-rectangular converter 205. Hereat, it is desirable that when a microwave propagated in thecylindrical waveguide 207 in the opposite direction is reflected at the connectingpart 213 thereby to form a standing wave, the distance L becomes equal to a quarter of a wavelength of the standing wave and further, thedummy load 215 has its axis positioned at an antinode of the standing wave. Thedummy load 215 is provided, at an end thereof, with amicrowave absorber 217. For example, as shown inFIG. 14 , themicrowave absorber 217 may be formed to be a cone storing water therein, allowing a microwave to be absorbed by the cone. Thedummy load 215 is provided, in its part close to thecylindrical waveguide 207, with ashutter 219 which makes it possible to interrupt the absorption of microwave by thedummy load 215 optionally. At the connecting part of thedummy load 215 with thecylindrical waveguide 207, ashield plate 221 is provided with aslit 223 in parallel with the axis of thecylindrical waveguide 207. Theslit 223 is formed to have, for example, a length of 50 to 120 mm and a width of 2 to 20 mm. Additionally, at the connectingpart 213, a rod-shaped reflectingplate 225 is arranged so as to be perpendicular to the axis of the cylindrical waveguide and also a projecting direction of thedummy load 215. The reflectingplate 225 is made of conductor and shaped in the form of a plate in a direction along a plane containing the axis of thecylindrical waveguide 207. - In the above-mentioned structure of the present invention, when a microwave, which has be propagated from the
radial waveguide box 211 in the opposite direction, passes through the circularly-polarizedwave converter 209 and reaches the connectingpart 213 between thecylindrical waveguide 207 and the circular-and-rectangular converter 205, the microwave reflects at the connectingpart 213 without entering into therectangular waveguide 201. Particularly, since theplasma processing apparatus 200 has the reflectingplate 225 arranged at the connectingpart 213, the microwave is reflected at theplate 225 thereby to form a standing wave C having a node at the reflectingplate 225, as shown inFIG. 14 . Since the axis of thedummy load 215, i.e. a center of the slit is positioned apart from the connectingpart 213 by a quarter of a wavelength of the standing wave., the antinode of the standing wave C coincides with the center of theslit 223. Then, the standing wave is propagated into thedummy load 215 through theslit 223 and subsequently absorbed in theabsorber 217. - In this way, since the microwave reflected from the
radial waveguide box 211 is absorbed in the dummy load, there is no possibility that the microwave is propagated toward theradial waveguide box 211 again. That is, since the uniformity of the microwave propagated from theradial waveguide box 211 into the processing container is not disturbed, it is possible to maintain the uniformity of plasma in the processing container at a higher level. -
FIGS. 15 and 16 are respective diagrams showing experimental results of the above-mentioned effect. These figures are obtained by measuring the intensity of saturated ionic currents on the mounting table. The measurement has been carried out at a center R1 of the mounting table and also in respective angular positions in the circumferential direction of respective circumferences of radii R2, R3 and R4 (the outermost circumference). The measuring results are designated in the form of graphs. - In these figures,
FIG. 15 illustrates the measured saturated ionic currents on condition of closing theshutter 219 in thedummy load 215, that is, an inactivated condition of thedummy load 215. From this figure, it will be understood that, in the state of theinactivated dummy load 215, the saturated ionic currents on the mounting table vary widely in the circumferential direction and additionally, such a tendency is remarkable in the outer peripheral position particularly. - To the contrary,
FIG. 16 shows a situation to open theshutter 219, in other words, an activated condition of thedummy load 215. From this figure, it will be understood that the saturated ionic currents on the mounting table represent respective constant values in all cases of both circumferential direction and radial direction and therefore, an influence due to the reflection of microwave is reduced remarkably. - Referring to
FIG. 17 , we describe aplasma processing apparatus 300 in accordance with the third embodiment whose effect is similar to that of the second embodiment. - In this figure, as similar to
FIG. 12 , areference numeral 201 designates a rectangular waveguide, 203 a corner part,. 205 a circular-and-rectangular converter, 207 a cylindrical waveguide, 209 circularly-polarized wave converters, and 211 a radial waveguide box. - The
cylindrical waveguide 207 is provided, at a lower part thereof, with atuner 311. Thistuner 311 has a plurality ofstubs 313 formed to project from the inner circumferential face of the lower part of thecylindrical waveguide 207 inward in the radial direction. By projecting into thecylindrical waveguide 207, thesestubs 313 operate to change an impedance thereby to drive the microwave, which has been reflected by theradial waveguide box 211, back to thesame box 211. The number ofstubs 313 is twelve in total: four stubs each at regular intervals of an angle of 90° in the circumferential direction; and three pairs of stubs at regular intervals in the axial direction of the cylindrical waveguide. For thesestubs 313, there are providedstub drivers 315 which drive thestubs 313 to the radial direction, respectively. -
Detectors 317 are arranged on the inner circumferential face of thecylindrical waveguide 207 between thestubs 313 and the circularly-polarizedwave converters 209. Thedetectors 317 are provided to detect the microwave that has been reflected by theradial waveguide box 211. The number ofdetectors 317 is twelve in total: four detectors each at regular intervals of an angle of 90° in the circumferential direction; and three pairs of detectors at regular intervals of λg/8 in the axial direction. - The apparatus further includes a
controller 319. Based on the intensity of an electromagnetic field of microwave measured by thedetectors 317, thecontroller 319 drives thestub drivers 315 to change the positions of thestubs 313 in the radial direction, thereby adjusting an impedance in tuning. - With the constitution mentioned above, the microwave propagated from the
radial waveguide box 211 in the opposite direction is detected by thedetectors 317 and the so-obtained measurement is transmitted to thecontroller 319. Then, on a basis of the intensity of the electromagnetic field of microwave measured by thedetectors 317, thecontroller 319 calculates the positions of thestubs 313 in the radial direction required to reflect the microwave, which has been returned from the part of theradial waveguide box 211, toward thesame box 211 again. Continuously, thecontroller 319 outputs a drive command of thestubs 313 to thestub drivers 315. In accordance with the drive command, each of thestub drivers 315 changes the radial-directional position of thestub 313 to adjust the impedance for tuning, whereby the returned microwave is reflected toward theradial waveguide box 211. - In this way, according to the
plasma processing apparatus 300, since the reflection wave from the radial waveguide box is tuned and reflected in front of the circularly-polarizedwave converter 209, the rotating direction of the circularly-polarized wave is not reversed. Accordingly, it is possible to propagate a uniform microwave from the slot antenna, thereby accomplishing a uniform plasma processing. - Next, the matching operation for circularly-polarized wave by this tuner will be described.
- As to the circularly-polarized wave in TE11 mode in the circular waveguide, the rectangular waveguide is replaced by the circular waveguide thereby to produce the “TE11 mode” circularly-polarized wave by the circularly-polarized wave generator having a phase plate etc. arranged in the part of the circular waveguide.
- It is noted that the reflection wave from the load of the circular waveguide travels in the opposite direction of the traveling wave and rotates in the same direction as the traveling wave.
- Therefore, in the part of the circular waveguide, a standing wave produced by the reflection wave is identical to a standing wave of the TE11 mode (not a circularly-polarized wave) in the axial direction of the waveguide at a position of a constant angle.
- As to the angular direction, since a standing wave is generated in the circumference, it is also possible to detect the standing wave in this direction.
- As to the detection of the standing wave, there are provided three to five styluses at regular intervals of λ g/8 of the guide wavelength, so that the detector detects a microwave detected by the styluses (three to five styluses at regular intervals of an angle of 45° in the circumferential direction).
- For example, in case of detecting the standing wave by four styluses, the absolute value of voltage is calculated by the following expression.
|V|=|Vi|{square root}{square root over ( )}[1+|Γ|2+2|Γ|cos(θ−2β1)] - Under the square-law detection, respective voltages of the detectors #1, #2, #3, #4 are as follows:
V 1 =K|Vi| 2(1+|Γ|2+2|Γ|cos θ)
V 2 =K|Vi| 2(1+|Γ|2−2|Γ|sin θ)
V 3 =K|Vi| 2(1+|Γ|2−2|Γ|cos θ)
V 4 =K|Vi| 2(1+|Γ|2+2|Γ|sin θ) - Therefore, there are established the following expressions.
V 1 −V 3=4K|Vi| 2|Γ|cos θ
V 4 −V 2=4K|Vi| 2|Γ|sin θ - Since this signal contains. the information of both reflection coefficient |Γ| and phase θ, if normalizing the member of 4K|Vi|2 in the above equations, then the values of |Γ| cos θ, |Γ| sin θ are calculated to allow an impedance of load to be calculated.
- Alternatively, in case of detecting the standing wave by three styluses, there are established the following expressions:
V 1 =K|Vi| 2(1+|Γ|2+2|Γ|cos θ)
V 2 =K|Vi| 2(1+|Γ|2−2|Γ|sin θ)
V 3 =K|Vi| 2(1+|Γ|2−2|Γ|cos θ)
V 1 −V 3=4K|Vi| 2|Γ|2cos θ
[(V 3 +V 3)/2]−V 2=4K|Vi| 2|Γ|sin θ - Similarly, the values of |Γ| cos θ, |Γ| sin θ are calculated to obtain the impedance of load in calculation.
- Note, even if there are provided, at regular intervals of an angle of 45° in the circumferential direction of the circular waveguide, three or more detection terminals in place of the detectors in the axial direction, the impedance of load can be calculated similarly.
- That is, the use of either three to four detectors in the axial direction or four detectors in the circumferential direction employing allows an automatic matching operation to be realized.
- If only calculating the positions of three stubs arranged at intervals of (λg/8) to (λg/4) (recommended) by using the so-calculated impedance of load by means of a microcomputer and subsequently adjusting the positions of three stubs, then a matching can be accomplished.
- When the stubs of plural number (e.g. four) are arranged in the circumferential direction, the circumferential balance for circular polarized wave is so improved as to allow of automatic matching against the large reflection of load.
- Note, although the
plasma processing apparatus 200 equipped with thedummy load 215 and theplasma processing apparatus 300 equipped with thetuner 311 have been described independently of each other in the above-mentioned embodiments, the present invention is applicable to a plasma processing apparatus equipped with both of dummy load and tuner, of course. - Additionally, although the plasma processing apparatus is applied to the plasma etching apparatus in common with the above embodiments, the present invention may be applied to other processes, for example, film-deposition process, process to improve properties of film, etc.
- According to the present invention, the plasma processing apparatus includes the processing container shaped to be a cylinder with a bottom, the processing container having, inside thereof, the mounting table for mounting an object to be processed thereon, the lid body made of a dielectric material to cover an upper opening of the processing container, the microwave supplier for supplying a microwave, the cylindrical waveguide having one end connected to the microwave supplier, the cylindrical waveguide being formed so as to extend from the microwave supplier toward the lid body thereby defining a waveguide space in the cylindrical waveguide, the radial waveguide box connected to the other end of the cylindrical waveguide and also formed so as to extend from the other end of the cylindrical waveguide radially outward in form of a flange and successively extend downward therefrom in form of a sidewall, the radial waveguide box defining another waveguide space therein and the slot antenna arranged along the lid body to cover a lower opening of the radial waveguide box, the slot antenna having a plurality of slots formed therein. Therefore, it is possible to prevent an inside cable from generating heat, which might be caused in using a coaxial waveguide. Furthermore, it is possible to produce a uniform plasma in the processing container, thereby allowing an even treatment to be applied on even a large-diameter wafer.
Claims (14)
1-14. (canceled)
15. A plasma processing apparatus comprising:
a processing container shaped to be a cylinder with a bottom, the processing container having, inside thereof, a mounting table for mounting an object to be processed thereon;
a lid body made of a dielectric material to cover an upper opening of the processing container;
a microwave supplier for supplying a microwave;
a cylindrical waveguide having one end connected to the microwave supplier, the cylindrical waveguide being formed so as to extend from the microwave supplier toward the lid body thereby defining a waveguide space in the cylindrical waveguide;
a radial waveguide box connected to the other end of the cylindrical waveguide and also formed so as to extend from the other end of the cylindrical waveguide radially outward in form of a flange and successively extend downward therefrom in form of a sidewall, the radial waveguide box defining another waveguide space therein; and
a slot antenna arranged along the lid body to cover a lower opening of the radial waveguide box. the slot antenna having a plurality of slots formed therein,
wherein a periphery between the slot antenna and the processing container has an absorbing member arranged to absorb a high frequency wave.
16. A plasma processing apparatus as claimed in claim 15 , wherein the slot antenna is held by struts each made of a dielectric material.
17. A plasma processing apparatus as claimed in claim 15 , wherein an interior of the radial waveguide box is filled up with a dielectric material.
18. A plasma processing apparatus as claimed in claim 15 , wherein an outer periphery inside the radial waveguide box has an absorbing member arranged to absorb a high frequency wave.
19. A plasma processing apparatus comprising:
a processing container shaped to be a cylinder with a bottom, the processing container having, inside thereof, a mounting table for mounting an object to be processed thereon;
a lid body made of a dielectric material to cover an upper opening of the processing container;
a microwave supplier for supplying a microwave;
a cylindrical waveguide having one end connected to the microwave supplier, the cylindrical waveguide being formed so as to extend from the microwave supplier toward the lid body thereby defining a waveguide space in the cylindrical waveguide;
a radial waveguide box connected to the other end of the cylindrical waveguide and also formed so as to extend from the other end of the cylindrical waveguide radially outward in form of a flange and successively extend downward therefrom in form of a sidewall, the radial waveguide box defining another waveguide space therein; a slot antenna arranged alone the lid body to cover a lower opening of the radial waveguide box, the slot antenna having a Plurality of slots formed therein; and
a circularly-polarized wave converter arranged in the cylindrical waveguide between the microwave supplier and the radial waveguide box to rotate the microwave in TE11 mode about an axis of the cylindrical waveguide thereby transmitting a resulting circularly-polarized wave to the radial waveguide box,
wherein the microwave to be propagated from the microwave supplier to the radial waveguide box through the cylindrical waveguide box is identical to a microwave in TE11 mode, and
wherein the apparatus further comprises, between the microwave supplier and the cylindrical waveguide:
a rectangular waveguide extending from the microwave supplier;
a circular-and-rectangular converter arranged between the rectangular waveguide and the cylindrical waveguide; and
a cylindrical dummy load having its one end connected to the cylindrical waveguide between the circular-and-rectangular converter and the circularly-polarized wave converter, the other end of the cylindrical dummy load having a microwave absorber.
20. A plasma processing apparatus as claimed in claim 19 , wherein the dummy load is provided, at its connecting part with the cylindrical waveguide, with a partition wall which separates an interior of the cylindrical waveguide and an interior of the dummy load and has a slit formed to be parallel with an axial direction of the cylindrical waveguide.
21. A plasma processing apparatus as claimed in claim 19 , further comprising a rod-shaped reflector arranged in the waveguide between the cylindrical waveguide and the circular-and-rectangular converter, the rod-shaped reflector consisting of a conductor bridged in a direction substantially perpendicular to an axis of the cylindrical waveguide and substantially perpendicular to an extending direction of the dummy load.
22. A plasma processing apparatus as claimed in claim 21 , wherein the reflector is a plate body along a plane containing the axis of the cylindrical waveguide.
23. A plasma processing apparatus as claimed in claim 19 , wherein an axis of the dummy load is arranged in a position apart from the reflector toward the circularly-polarized wave converter by a quarter of guide wavelength of a standing wave reflected by the reflector.
24. A plasma processing apparatus comprising:
a processing container shaped to be a cylinder with a bottom. the processing container having, inside thereof, a mounting table for mounting an object to be processed thereon;
a lid body made of a dielectric material to cover an upper opening of the processing container:
a microwave supplier for supplying a microwave;
a cylindrical waveguide having one end connected to the microwave supplier, the cylindrical waveguide being formed so as to extend from the microwave supplier toward the lid body thereby defining a waveguide space in the cylindrical waveguide;
a radial waveguide box connected to the other end of the cylindrical waveguide and also formed so as to extend from the other end of the cylindrical waveguide radially outward in form of a flange and successively extend downward therefrom in form of a sidewall, the radial waveguide box defining another waveguide space therein;
a slot antenna arranged along the lid body to cover a lower opening of the radial waveguide box, the slot antenna having a plurality of slots formed therein;
a circularly-polarized wave converter arranged in the cylindrical waveguide between the microwave supplier and the radial waveguide box to rotate the microwave in TE11 mode about an axis of the cylindrical waveguide thereby transmitting a resulting circularly-polarized wave to the radial waveguide box; and
a tuner arranged in the cylindrical waveguide between the circularly-polarized wave converter and the radial waveguide box to adjust an impedance in the cylindrical waveguide thereby to reflect a microwave, which has been returned by reflection of the radial waveguide box, toward the radial waveguide box,
wherein the microwave to be propagated from the microwave supplier to the radial waveguide box through the cylindrical waveguide box is identical to a microwave in TE11 mode.
25. A plasma processing apparatus as claimed in claim 24 , wherein the tuner comprises:
a plurality of stubs projecting from an inner circumferential wall of the cylindrical waveguide inwardly in a radial direction thereof, with respective adjustable projecting amounts;
a stub driver for driving the stubs in the radial direction;
a detector arranged inside the cylindrical waveguide between the stubs and the circularly-polarized converter to detect an intensity of electromagnetic field of a microwave in the cylindrical waveguide; and
a controller for driving the stub driver on a basis of the intensity of electromagnetic field of the microwave detected by the detector thereby to change respective positions of the stubs in the radial direction for adjustment of an impedance, the controller for controlling the microwave, which has been returned from the part of the radial waveguide box, so as to reflect toward the radial waveguide box.
26. A plasma processing apparatus as claimed in claim 25 , wherein the stubs are complete in twelve stubs which are arranged on an inner circumferential face of the cylindrical waveguide and which consist of four stubs arranged at regular intervals in a circumferential direction of the cylindrical waveguide for each level and also lined three deep along an axial direction of the cylindrical waveguide.
27. A plasma processing method for a plasma processing apparatus including: a processing container accommodating an object to be processed therein and having an upper opening covered by a lid body made of a dielectric material; a microwave supplier for supplying a microwave; a cylindrical waveguide having one end connected to the microwave supplier, the cylindrical waveguide being formed so as to extend from the microwave supplier toward the lid body thereby defining a waveguide space in the cylindrical waveguide; a radial waveguide box connected to the other end of the cylindrical waveguide and also formed so as to extend from the other end of the cylindrical waveguide radially outward and successively extend downward therefrom in form of a sidewall, the radial waveguide box defining another waveguide space therein; a slot antenna adapted so as to cover a lower opening of the radial waveguide box; and a circularly-polarized wave converter for rotating a microwave in TE11 mode supplied from the microwave supplier about an axis of the cylindrical waveguide thereby transmitting the microwave as a circularly-polarized wave to the radial waveguide box; the plasma processing method comprising the steps of:
rotating the microwave in TE11 mode supplied from the microwave supplier about the axis of the cylindrical waveguide thereby transmitting the microwave as the circularly-polarized wave to the radial waveguide box;
monitoring a microwave which has been reflected by the part of the radial waveguide box and subsequently returned therefrom;
tuning the so-reflected microwave on a basis of a result at the monitoring step; and
producing a uniform plasma in the processing container by the tuning step.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/137,538 US20050211382A1 (en) | 2000-03-30 | 2005-05-26 | Plasma processing apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-93660 | 2000-03-30 | ||
JP2000093660 | 2000-03-30 | ||
US09/979,719 US6910440B2 (en) | 2000-03-30 | 2001-01-18 | Apparatus for plasma processing |
US11/137,538 US20050211382A1 (en) | 2000-03-30 | 2005-05-26 | Plasma processing apparatus |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/979,719 Division US6910440B2 (en) | 2000-03-30 | 2001-01-18 | Apparatus for plasma processing |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050211382A1 true US20050211382A1 (en) | 2005-09-29 |
Family
ID=18608815
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/979,719 Expired - Fee Related US6910440B2 (en) | 2000-03-30 | 2001-01-18 | Apparatus for plasma processing |
US11/137,538 Abandoned US20050211382A1 (en) | 2000-03-30 | 2005-05-26 | Plasma processing apparatus |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/979,719 Expired - Fee Related US6910440B2 (en) | 2000-03-30 | 2001-01-18 | Apparatus for plasma processing |
Country Status (5)
Country | Link |
---|---|
US (2) | US6910440B2 (en) |
EP (1) | EP1276356B1 (en) |
KR (1) | KR100789796B1 (en) |
TW (1) | TW497367B (en) |
WO (1) | WO2001076329A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9072158B2 (en) | 2010-01-18 | 2015-06-30 | Tokyo Electron Limited | Electromagnetic-radiation power-supply mechanism for exciting a coaxial waveguide by using first and second poles and a ring-shaped reflection portion |
US11195699B2 (en) * | 2015-10-29 | 2021-12-07 | Applied Materials, Inc. | Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide |
US20210384012A1 (en) * | 2020-06-04 | 2021-12-09 | Samsung Electronics Co., Ltd. | Substrate processing apparatus |
US11972930B2 (en) | 2021-12-06 | 2024-04-30 | Applied Materials, Inc. | Cylindrical cavity with impedance shifting by irises in a power-supplying waveguide |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4522356B2 (en) * | 2000-03-30 | 2010-08-11 | 東京エレクトロン株式会社 | Plasma processing equipment |
US6847003B2 (en) * | 2000-10-13 | 2005-01-25 | Tokyo Electron Limited | Plasma processing apparatus |
US6911617B2 (en) * | 2001-01-18 | 2005-06-28 | Tokyo Electron Limited | Plasma device and plasma generating method |
KR100626192B1 (en) * | 2001-09-27 | 2006-09-21 | 동경 엘렉트론 주식회사 | Electromagnetic field supply device and plasma processing device |
JP4837854B2 (en) * | 2001-09-28 | 2011-12-14 | 東京エレクトロン株式会社 | Matching device and plasma processing apparatus |
JP4209612B2 (en) * | 2001-12-19 | 2009-01-14 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP4381001B2 (en) * | 2003-02-25 | 2009-12-09 | シャープ株式会社 | Plasma process equipment |
KR101096950B1 (en) * | 2004-03-19 | 2011-12-20 | 샤프 가부시키가이샤 | Plasma Treatment Apparatus and Plasma Treatment Method |
DE102004030344B4 (en) * | 2004-06-18 | 2012-12-06 | Carl Zeiss | Apparatus for coating optical glasses by means of plasma enhanced chemical vapor deposition (CVD) |
JP5082229B2 (en) * | 2005-11-29 | 2012-11-28 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP4910396B2 (en) * | 2006-01-12 | 2012-04-04 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2008059991A (en) * | 2006-09-01 | 2008-03-13 | Canon Inc | Plasma processing apparatus and plasma processing method |
JP2007109670A (en) * | 2006-12-22 | 2007-04-26 | Tokyo Electron Ltd | Plasma processing device |
US8365096B2 (en) | 2007-12-31 | 2013-01-29 | Motorola Mobility Llc | Method and apparatus for transparently mapping personalized alert preferences onto thin client devices with differing capabilities |
US8753475B2 (en) | 2008-02-08 | 2014-06-17 | Tokyo Electron Limited | Plasma processing apparatus |
JP2010050046A (en) * | 2008-08-25 | 2010-03-04 | Hitachi High-Technologies Corp | Plasma treatment device |
US20100059508A1 (en) * | 2008-09-05 | 2010-03-11 | Atmel Corporation | Semiconductor processing |
TW201026162A (en) * | 2008-12-25 | 2010-07-01 | Ind Tech Res Inst | A long linear-type microwave plasma source using variably-reduced-height rectangular waveguide as the plasma reactor |
CN102365785B (en) * | 2009-03-27 | 2014-02-26 | 东京毅力科创株式会社 | Tuner and microwave plasma source |
US9237638B2 (en) | 2009-08-21 | 2016-01-12 | Tokyo Electron Limited | Plasma processing apparatus and substrate processing method |
JP2015022940A (en) * | 2013-07-19 | 2015-02-02 | 東京エレクトロン株式会社 | Plasma processing apparatus, abnormal oscillation determination method, and high-frequency generator |
US9613783B2 (en) * | 2014-07-24 | 2017-04-04 | Applied Materials, Inc. | Method and apparatus for controlling a magnetic field in a plasma chamber |
US9599761B1 (en) | 2015-09-03 | 2017-03-21 | 3M Innovative Properties Company | Thermoformed multilayer reflective polarizer |
JP7194937B2 (en) * | 2018-12-06 | 2022-12-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
CN117616877A (en) * | 2022-06-21 | 2024-02-27 | 株式会社日立高新技术 | Plasma processing apparatus and heating apparatus |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593259A (en) * | 1983-07-27 | 1986-06-03 | Varian Associates, Inc. | Waveguide load having reflecting structure for diverting microwaves into absorbing fluid |
US4985109A (en) * | 1989-02-08 | 1991-01-15 | Hitachi, Ltd. | Apparatus for plasma processing |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US5173641A (en) * | 1990-09-14 | 1992-12-22 | Tokyo Electron Limited | Plasma generating apparatus |
US5175561A (en) * | 1989-08-21 | 1992-12-29 | Radial Antenna Laboratory, Ltd. | Single-layered radial line slot antenna |
US5342472A (en) * | 1991-08-12 | 1994-08-30 | Tokyo Electron Limited | Plasma processing apparatus |
US5433789A (en) * | 1992-01-30 | 1995-07-18 | Hitachi, Ltd. | Methods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwaves |
US5580387A (en) * | 1995-06-28 | 1996-12-03 | Electronics Research & Service Organization | Corrugated waveguide for a microwave plasma applicator |
US5698036A (en) * | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
US5874706A (en) * | 1996-09-26 | 1999-02-23 | Tokyo Electron Limited | Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field |
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US6497783B1 (en) * | 1997-05-22 | 2002-12-24 | Canon Kabushiki Kaisha | Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3044049B2 (en) | 1990-03-14 | 2000-05-22 | 株式会社日立製作所 | Plasma processing method and apparatus |
JPH03272136A (en) | 1990-03-22 | 1991-12-03 | Hitachi Ltd | Dry etching device |
JPH065386A (en) * | 1992-06-19 | 1994-01-14 | Kobe Steel Ltd | Electronic cyclotron resonance device |
JP3287041B2 (en) * | 1992-12-28 | 2002-05-27 | 株式会社ダイヘン | Control method of plasma processing apparatus |
JP2972507B2 (en) | 1993-11-08 | 1999-11-08 | 株式会社日立製作所 | Microwave plasma processing equipment |
JPH06333848A (en) * | 1993-05-27 | 1994-12-02 | Hitachi Ltd | Plasma generating device |
JPH07263186A (en) | 1994-03-17 | 1995-10-13 | Hitachi Ltd | Plasma treatment device |
JP3136054B2 (en) | 1994-08-16 | 2001-02-19 | 東京エレクトロン株式会社 | Plasma processing equipment |
JPH0878190A (en) | 1994-09-01 | 1996-03-22 | Kokusai Electric Co Ltd | Microwave discharge device and discharge method |
JPH09289099A (en) * | 1996-02-20 | 1997-11-04 | Hitachi Ltd | Plasma processing method and device |
JP3233042B2 (en) | 1996-09-17 | 2001-11-26 | 株式会社日立製作所 | Plasma processing method and apparatus |
JP3774965B2 (en) | 1996-12-18 | 2006-05-17 | 株式会社日立製作所 | Plasma processing equipment |
JP3813741B2 (en) * | 1998-06-04 | 2006-08-23 | 尚久 後藤 | Plasma processing equipment |
JP3855468B2 (en) * | 1998-06-19 | 2006-12-13 | 株式会社日立製作所 | Plasma processing equipment |
JP2000058294A (en) | 1998-08-07 | 2000-02-25 | Furontekku:Kk | Plasma treatment device |
JP3549739B2 (en) | 1998-08-27 | 2004-08-04 | 忠弘 大見 | Plasma processing equipment |
JP2000299198A (en) * | 1999-02-10 | 2000-10-24 | Tokyo Electron Ltd | Plasma processing device |
JP2000353695A (en) | 2000-01-01 | 2000-12-19 | Hitachi Ltd | Plasma processing method and apparatus |
-
2001
- 2001-01-18 EP EP01901433A patent/EP1276356B1/en not_active Expired - Lifetime
- 2001-01-18 TW TW090101132A patent/TW497367B/en not_active IP Right Cessation
- 2001-01-18 WO PCT/JP2001/000311 patent/WO2001076329A1/en active IP Right Grant
- 2001-01-18 KR KR1020027013012A patent/KR100789796B1/en not_active IP Right Cessation
- 2001-01-18 US US09/979,719 patent/US6910440B2/en not_active Expired - Fee Related
-
2005
- 2005-05-26 US US11/137,538 patent/US20050211382A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4593259A (en) * | 1983-07-27 | 1986-06-03 | Varian Associates, Inc. | Waveguide load having reflecting structure for diverting microwaves into absorbing fluid |
US4985109A (en) * | 1989-02-08 | 1991-01-15 | Hitachi, Ltd. | Apparatus for plasma processing |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
US5175561A (en) * | 1989-08-21 | 1992-12-29 | Radial Antenna Laboratory, Ltd. | Single-layered radial line slot antenna |
US5173641A (en) * | 1990-09-14 | 1992-12-22 | Tokyo Electron Limited | Plasma generating apparatus |
US5342472A (en) * | 1991-08-12 | 1994-08-30 | Tokyo Electron Limited | Plasma processing apparatus |
US5433789A (en) * | 1992-01-30 | 1995-07-18 | Hitachi, Ltd. | Methods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwaves |
US5646489A (en) * | 1992-01-30 | 1997-07-08 | Hitachi, Ltd. | Plasma generator with mode restricting means |
US5698036A (en) * | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
US5580387A (en) * | 1995-06-28 | 1996-12-03 | Electronics Research & Service Organization | Corrugated waveguide for a microwave plasma applicator |
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US5874706A (en) * | 1996-09-26 | 1999-02-23 | Tokyo Electron Limited | Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field |
US6497783B1 (en) * | 1997-05-22 | 2002-12-24 | Canon Kabushiki Kaisha | Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9072158B2 (en) | 2010-01-18 | 2015-06-30 | Tokyo Electron Limited | Electromagnetic-radiation power-supply mechanism for exciting a coaxial waveguide by using first and second poles and a ring-shaped reflection portion |
US11195699B2 (en) * | 2015-10-29 | 2021-12-07 | Applied Materials, Inc. | Generalized cylindrical cavity system for microwave rotation and impedance shifting by irises in a power-supplying waveguide |
US20210384012A1 (en) * | 2020-06-04 | 2021-12-09 | Samsung Electronics Co., Ltd. | Substrate processing apparatus |
US11972930B2 (en) | 2021-12-06 | 2024-04-30 | Applied Materials, Inc. | Cylindrical cavity with impedance shifting by irises in a power-supplying waveguide |
Also Published As
Publication number | Publication date |
---|---|
US20020148564A1 (en) | 2002-10-17 |
KR20020088413A (en) | 2002-11-27 |
EP1276356B1 (en) | 2007-08-15 |
TW497367B (en) | 2002-08-01 |
US6910440B2 (en) | 2005-06-28 |
EP1276356A1 (en) | 2003-01-15 |
WO2001076329A1 (en) | 2001-10-11 |
EP1276356A4 (en) | 2006-01-04 |
KR100789796B1 (en) | 2007-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6910440B2 (en) | Apparatus for plasma processing | |
US9343270B2 (en) | Plasma processing apparatus | |
US6034346A (en) | Method and apparatus for plasma processing apparatus | |
US5683537A (en) | Plasma processing apparatus | |
US5800619A (en) | Vacuum plasma processor having coil with minimum magnetic field in its center | |
KR100363820B1 (en) | Plasma processor | |
US6325018B1 (en) | Flat antenna having openings provided with conductive materials accommodated therein and plasma processing apparatus using the flat antenna | |
JP3136054B2 (en) | Plasma processing equipment | |
US9761418B2 (en) | Plasma processing apparatus | |
JP4522356B2 (en) | Plasma processing equipment | |
US11443927B2 (en) | Plasma treatment device | |
TWI469696B (en) | Plasma processing device | |
US9646867B2 (en) | Plasma processing apparatus, power supply unit and mounting table system | |
KR100557255B1 (en) | Plasma processing apparatus | |
JPH09106900A (en) | Plasma processing method and plasma processing device | |
JP2001223098A (en) | Microwave plasma processing equipment | |
KR100311104B1 (en) | Microwave plasma processing apparatus and method | |
KR19990036980A (en) | Microwave Plasma Treatment Apparatus and Microwave Plasma Treatment Method | |
JP3249193B2 (en) | Plasma processing equipment | |
JP2000173797A (en) | Microwave plasma treating device | |
JP3914071B2 (en) | Plasma processing equipment | |
KR100651990B1 (en) | Plasma processor and plasma processing method | |
KR100404723B1 (en) | Device for Generating Inductively Coupled Plasma with Lower Aspect Ratio | |
JP2779997B2 (en) | Plasma processing equipment | |
JP4107723B2 (en) | Microwave plasma processing equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |