US20050282479A1 - Polishing pad having grooves configured to promote mixing wakes during polishing - Google Patents
Polishing pad having grooves configured to promote mixing wakes during polishing Download PDFInfo
- Publication number
- US20050282479A1 US20050282479A1 US10/869,394 US86939404A US2005282479A1 US 20050282479 A1 US20050282479 A1 US 20050282479A1 US 86939404 A US86939404 A US 86939404A US 2005282479 A1 US2005282479 A1 US 2005282479A1
- Authority
- US
- United States
- Prior art keywords
- polishing
- grooves
- boundary
- polishing pad
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S451/00—Abrading
- Y10S451/921—Pad for lens shaping tool
Abstract
A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) containing a plurality of grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations largely parallel to one or more corresponding respective velocity vectors (V1-V4)(V1′-V4′)(V1″-V4″) (V1′″-V4′″) of the wafer. These parallel orientations promote the formation of mixing wakes in a polishing medium (120) within these grooves during polishing.
Description
- The present invention generally relates to the field of polishing. In particular, the present invention is directed to a polishing pad having grooves configured to enhance or promote mixing wakes during polishing.
- In the fabrication of integrated circuits and other electronic devices, multiple layers of conducting, semiconducting and dielectric materials are deposited onto and etched from a surface of a semiconductor wafer. Thin layers of these materials may be deposited using any of a number of deposition techniques. Deposition techniques common in modern wafer processing include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD) and electrochemical plating. Common etching techniques include wet and dry isotropic and anisotropic etching, among others.
- As layers of materials are sequentially deposited and etched, the uppermost surface of the wafer becomes non-planar. Because subsequent semiconductor processing (e.g., photolithography) requires the wafer to have a flat surface, the wafer needs to be planarized. Planarization is useful for removing undesired surface topography as well as surface defects, such as rough surfaces, agglomerated materials, crystal lattice damage, scratches and contaminated layers or materials.
- Chemical mechanical planarization, or chemical mechanical polishing (CMP), is a common technique used to planarize workpieces, such as semiconductor wafers. In conventional CMP using a dual-axis rotary polisher, a wafer carrier, or polishing head, is mounted on a carrier assembly. The polishing head holds the wafer and positions it in contact with a polishing layer of a polishing pad within the polisher. The polishing pad has a diameter greater than twice the diameter of the wafer being planarized. During polishing, each of the polishing pad and wafer is rotated about its respective center while the wafer is engaged with the polishing layer. The rotational axis of the wafer is offset relative to the rotational axis of the polishing pad by a distance greater than the radius of the wafer such that the rotation of the pad sweeps out a ring-shaped “wafer track” on the polishing layer of the pad. When the only movement of the wafer is rotational, the width of the wafer track is equal to the diameter of the wafer. However, in some dual-axis polishers, the wafer is oscillated in a plane perpendicular to its axis of rotation. In this case, the width of the wafer track is wider than the diameter of the wafer by an amount that accounts for the displacement due to the oscillation. The carrier assembly provides a controllable pressure between the wafer and polishing pad. During polishing, a slurry, or other polishing medium, is flowed onto the polishing pad and into the gap between the wafer and polishing layer. The wafer surface is polished and made planar by chemical and mechanical action of the polishing layer and slurry on the surface.
- The interaction among polishing layers, polishing media and wafer surfaces during CMP is being increasingly studied in an effort to optimize polishing pad designs. Most of the polishing pad developments over the years have been empirical in nature. Much of the design of polishing surfaces, or layers, of polishing pads has focused on providing these layers with various patterns of voids and/or networks of grooves that are claimed to enhance slurry utilization and polishing uniformity. Over the years, quite a few different groove and void patterns and configurations have been implemented. Prior art groove patterns include radial, concentric circular, Cartesian grid and spiral, among others. Prior art groove configurations include configurations wherein the width and depth of all the grooves are uniform among all grooves and configurations wherein the width or depth of the grooves varies from one groove to another.
- Some designers of rotational CMP pads have designed pads having groove configurations that include two or more groove configurations that change from one configuration to another based on one or more radial distances from the center of the pad. These pads are touted as providing superior performance in terms of polishing uniformity and slurry utilization, among other things. For example, in U.S. Pat. No. 6,520,847 to Osterheld et al., Osterheld et al. disclose several pads having three concentric ring-shaped regions, each containing a configuration of grooves that is different from the configurations of the other two regions. The configurations vary in different ways in different embodiments. Ways in which the configurations vary include variations in number, cross-sectional area, spacing and type of grooves.
- Although pad designers have heretofore designed CMP pads that include two or more groove configurations that are different from one another in different zones of the polishing layer, these designs do not directly consider the effect of the groove configuration on mixing wakes that occur in the grooves.
FIG. 1 shows aplot 10 of the ratio of new slurry to old slurry during polishing at an instant in time within the gap (represented by circular region 14) between a wafer (not shown) and a conventionalrotary polishing pad 18 havingcircular grooves 22. For the purposes of this specification, “new slurry” may be considered slurry that is moving in the rotational direction ofpolishing pad 18, and “old slurry” may be considered slurry that has already participated in polishing and is being held within the gap by the rotation of the wafer. - In
plot 10, new slurry region 26 essentially contains only new slurry andold slurry region 30 essentially contains only old slurry at an instant in time whenpolishing pad 18 is rotated indirection 34 and the wafer is rotated indirection 38. Amixing region 42 is formed in which new slurry and old slurry become mixed with one another so as to cause a concentration gradient (represented by region 42) between new slurry region 26 andold slurry region 30. Computational fluid dynamics simulations show that due to the rotation of the wafer, slurry immediately adjacent to the wafer may be driven in a direction other than therotational direction 34 of the pad, whereas slurry somewhat removed from the wafer is held among “asperities” or roughness elements on the surface ofpolishing pad 18 and more strongly resists being driven in a direction other thandirection 34. The effect of wafer rotation is most pronounced atcircular grooves 22 at locations where the grooves are parallel, or nearly so, torotational direction 38 of the wafer because the slurry in the grooves is not held among any asperities and is easily driven by wafer rotation along the length ofcircular grooves 22. The effect of wafer rotation is less pronounced incircular grooves 22 at locations where the grooves are transverse torotational direction 38 of the wafer because the slurry can be driven only along the width of the groove within which it is otherwise confined. - Mixing wakes similar to mixing
wakes 46 shown occur in groove patterns other than circular patterns, such as the groove patterns mentioned above. Like circular-grooved pad 18 ofFIG. 1 , in each of these alternative groove patterns, the mixing wakes are most pronounced in regions where the rotational direction of the wafer is most aligned with the grooves, or groove segments, as the case may be, of the pad. Mixing wakes are undesirable in many CMP applications because renewal of active chemical species and removal of heat are slower in the wake region than in the ungrooved areas of the pad immediately adjacent each groove. However, in other applications, mixing wakes can be beneficial precisely because they provide more gradual transitions from spent to fresh chemistry and from warmer to cooler zones of reaction. Without mixing wakes, these transitions can be unfavorably sharp and bring about significant variations in polish conditions point to point under the wafer. Consequently, there is a need for CMP polishing pad designs that are optimized, at least in part, based on the consideration of the occurrence of mixing wakes and the effects that such wakes have on polishing. - In one aspect of the invention, a polishing pad suitable for polishing at least one of magnetic, optical and semiconductor substrates, comprising: (a) a polishing layer having a polishing region defined by a first boundary corresponding to a trajectory of a first point on a polishing pad and a second boundary defined by a trajectory of a second point on the polishing pad, the second boundary being spaced from the first boundary; (b) at least one first small-angle groove at least partially contained within the polishing region proximate the first boundary and forming an angle of −40° to 40° relative to the first boundary at a point proximate the first boundary; (c) at least one second small-angle groove at least partially contained within the polishing region proximate the second boundary and forming an angle of −40° to 40° relative to the second boundary at a point proximate the second boundary; and (d) a plurality of large-angle grooves, each contained within the polishing region and located between the at least one first small-angle groove and the at least one second small angle groove and each of the plurality of large-angle grooves forming an angle of 45° to 135° relative to each of the first boundary and the second boundary.
- In another aspect of the invention, a method of polishing a magnetic, optical or semiconductor substrate, comprising the step of polishing the substrate with a polishing medium and the polishing pad described immediately above.
-
FIG. 1 is a partial plan view/partial plot illustrating the formation of mixing wakes in the gap between a wafer and a prior art polishing pad having a circular groove pattern; -
FIG. 2 is a perspective view of a portion of a dual-axis polisher suitable for use with the present invention; -
FIG. 3A is a plan view of a rotary polishing pad of the present invention;FIG. 3B is a plan view of an alternative rotary polishing pad of the present invention;FIG. 3C is a plan view of another alternative rotary polishing pad of the present invention; and -
FIG. 4 is a partial plan view of a belt-type polishing pad of the present invention. - Referring again to the drawings,
FIG. 2 generally illustrates the primary features of a dual-axis chemical mechanical polishing (CMP)polisher 100 suitable for use with the present invention.Polisher 100 generally includes apolishing pad 104 having apolishing layer 108 for engaging an article, such as semiconductor wafer 112 (processed or unprocessed) or other workpiece, e.g., glass, flat panel display or magnetic information storage disk, among others, so as to effect polishing of a surface 116 (hereinafter referred to as “polished surface”) of the workpiece in the presence of aslurry 120 or other polishing medium. For the sake of convenience, the terms “wafer” and “slurry” are used below without the loss of generality. In addition, as used in this specification, including the claims, the terms “polishing medium” and “slurry” include particle-containing polishing solutions and non-particle-containing solutions, such as abrasive-free and reactive-liquid polishing solutions. - As discussed below in detail, the present invention includes providing
polishing pad 104 with a groove arrangement (see, e.g.,groove arrangement 144 ofFIG. 3A ) that enhances the formation of mixing wakes or increases the size of mixing wakes that occur in the gap betweenwafer 112 and polishingpad 104 during polishing. As discussed in the background section above, mixing wakes occur in the gap where new slurry replaces old slurry and are most pronounced in regions where the rotational direction ofwafer 112 is most aligned with the grooves, or groove segments, as the case may be, of polishingpad 104. -
Polisher 100 may include aplaten 124 on whichpolishing pad 104 is mounted.Platen 124 is rotatable about arotational axis 128 by a platen driver (not shown).Wafer 112 may be supported by awafer carrier 132 that is rotatable about arotational axis 136 parallel to, and spaced from,rotational axis 128 ofplaten 124.Wafer carrier 132 may feature a gimbaled linkage (not shown) that allowswafer 112 to assume an aspect very slightly non-parallel to polishinglayer 108, in which caserotational axes Wafer 112 includespolished surface 116 that faces polishinglayer 108 and is planarized during polishing.Wafer carrier 132 may be supported by a carrier support assembly (not shown) adapted to rotatewafer 112 and provide a downward force F to presspolished surface 116 againstpolishing layer 108 so that a desired pressure exists between the polished surface and the polishing layer during polishing.Polisher 100 may also include aslurry inlet 140 for supplyingslurry 120 to polishinglayer 108. - As those skilled in the art will appreciate,
polisher 100 may include other components (not shown) such as a system controller, slurry storage and dispensing system, heating system, rinsing system and various controls for controlling various aspects of the polishing process, such as: (1) speed controllers and selectors for one or both of the rotational rates ofwafer 112 and polishingpad 104; (2) controllers and selectors for varying the rate and location of delivery ofslurry 120 to the pad; (3) controllers and selectors for controlling the magnitude of force F applied between the wafer and pad, and (4) controllers, actuators and selectors for controlling the location ofrotational axis 136 of the wafer relative torotational axis 128 of the pad, among others. Those skilled in the art will understand how these components are constructed and implemented such that a detailed explanation of them is not necessary for those skilled in the art to understand and practice the present invention. - During polishing, polishing
pad 104 andwafer 112 are rotated about their respectiverotational axes slurry 120 is dispensed fromslurry inlet 140 onto the rotating polishing pad.Slurry 120 spreads out overpolishing layer 108, including the gap beneathwafer 112 and polishingpad 104.Polishing pad 104 andwafer 112 are typically, but not necessarily, rotated at selected speeds between 0.1 rpm and 150 rpm. Force F is typically, but not necessarily, of a magnitude selected to induce a desired pressure of 0.1 psi to 15 psi (6.9 kPa to 103 kPa) betweenwafer 112 and polishingpad 104. -
FIG. 3A illustrates in connection with polishingpad 104 ofFIG. 2 , agroove arrangement 144 that, as mentioned above, enhances the formation of mixing wakes (elements 46 ofFIG. 1 ) or increases the size of mixing wakes withingrooves layer 108 of the pad. Generally, the concept underlying the present invention is to providegrooves wafer 112 at all locations on polishinglayer 108, or at as many locations as possible or practicable. Ifrotational axis 136 ofwafer 112 were coincident withrotational axis 128 of thepolishing pad 104, the ideal groove pattern according to the present invention would be one in which the grooves were concentric with the rotational axis of the pad. However, in dual-axis polishers, such aspolisher 100 illustrated inFIG. 2 , the situation is complicated by the offset 160 betweenrotational axes pad 104 andwafer 112. - Nevertheless, it is possible to design a polishing pad, e.g.,
pad 104, for use with a dual-axis polisher that approximates the ideal groove pattern possible when polishing is performed whenrotational axes wafer 112 and the pad are coincident. As a result of offset 160 (FIG. 1 ) betweenrotational axes causes polishing pad 104 to sweep out polishing region 164 (commonly referred to as the “wafer track” in the context of semiconductor wafer planarization) defined by aninner boundary 168 and anouter boundary 172. Generally, polishingregion 164 is that portion of polishinglayer 108 that confronts the polished surface (not shown) ofwafer 112 during polishing as polishingpad 104 is rotated relative to the wafer. In the embodiment shown, polishingpad 104 is designed for use withpolisher 100 ofFIG. 2 , whereinwafer 112 is rotated in a fixed position relative to the pad. Consequently, polishingregion 164 is annular in shape and has a width W between inner andouter boundaries wafer 112. In an embodiment whereinwafer 112 is not only rotated, but also oscillated in a direction parallel to polishinglayer 108, polishingregion 164 would typically likewise be annular, but width W between inner andouter boundaries wafer 112 to account for the oscillation envelope. Each of inner andouter boundaries pad 104 as the pad is rotated aboutrotational axis 128. That is,inner boundary 168 may, in general, be considered to be defined by the circular trajectory of a point on polishinglayer 108 of polishingpad 104 proximaterotational axis 128, whereasouter boundary 172 may, in general, be considered to be defined by the circular trajectory of a point on the polishing layer distal fromrotational axis 128. -
Inner boundary 168 of polishingregion 164 defines acentral region 176 where a slurry (not shown), or other polishing medium, may be provided to polishingpad 104 during polishing. In an embodiment whereinwafer 112 is not only rotated but also oscillated in a direction parallel to polishinglayer 108,central region 176 may be exceedingly small if the oscillation envelope extends to, or nearly to, the center of polishingpad 104, in which case the slurry or other polishing medium may be provided to the pad at an off-center location.Outer boundary 172 of polishingregion 164 will typically be located radially inward of the outerperipheral edge 180 of polishingpad 104, but may alternatively be coextensive with this edge. - In designing
groove pattern 144 in a manner that maximizes the number of locations whererotational direction 184 of wafer 1 12 is aligned withgrooves line 188 extending throughrotational axes pad 104 and the wafer, and two along acircular arc 190 concentric with the rotational axis of the pad and extending through the rotational axis of the wafer. This is so because these locations represent four velocity vector extremes ofwafer 112 relative to therotational direction 192 of polishingpad 104. That is, location L1 represents the location where a velocity vector V1 ofwafer 112 is essentially directly oppositerotational direction 192 of polishingpad 104 and has the greatest magnitude in this direction, location L2 represents the location where a velocity vector V2 of the wafer is essentially in the same direction as the rotational direction of the pad and has the greatest magnitude in this direction, and locations L3 and L4 represent the locations where respective velocity vectors V3 and V4 of the wafer are essentially perpendicular to the rotational direction of the pad and have the greatest magnitude in such directions. It is at locations L1-L4 that principles underlying the present invention may be applied so as to approximate the ideal groove pattern discussed above. - As can be easily appreciated, consideration of velocity vectors V1-V4 of
wafer 112 at these four locations L1-L4 generally leads to the partitioning of polishingregion 164 into three zones, zone Z1 corresponding to location L2, zone Z2 corresponding to both locations L3 and L4 and zone Z3 corresponding to location L1. Width W of polishingregion 164 may be apportioned among zones Z1-Z3 generally in any manner desired. For example, zones Z1 and Z3 may each be allotted one-quarter of width W and zone Z2 may be allotted one-half of width W. Other apportionment, such as one-third W may be allotted to each of zones Z1, Z2 and Z3, respectively, among others. - Applying the underlying principles of the present invention, i.e., providing
grooves grooves 148 are desirably circumferential, or nearly so, in zone Z1. This is so because velocity vector V2 would be parallel togrooves 148 when they have a circumferential, i.e. circular, configuration It is noted thatgrooves 148 need not be truly circular. Rather, eachgroove 148 may form an angle β withouter boundary 172 or a line concentric therewith. Generally, angle β is preferably in the range of −40° to +40° and, more preferably within the range of −30° to +30°, and even more preferably within the range of −15° to +15°. In addition, it is noted that eachgroove 148 need not have a smooth, continuous curvature within zone Z1, but rather may be straight, zigzag, wavy or sawtooth-shaped, among others. Generally, for eachgroove 148 that is zigzag, wavy, sawtooth-shaped and the like, angle β can be measured from a line that generally represents the transverse center of gravity of that groove. - The requirements for zone Z3 relative to
grooves 156 are essentially the same as the requirements for zone Z1, the primary difference being that velocity vector V1 at location L1 is opposite velocity vector V2 at location L2. Accordingly,grooves 156 may be circumferential likegrooves 148 of zone Z1 so as to be parallel toinner boundary 168. Also likegrooves 148,grooves 156 need not be truly circumferential, but rather may form a non-zero angle α withinner boundary 168 or a line concentric therewith. Generally, angle α is preferably in the range of −40° to +40° and, more preferably within the range of −30° to +30°, and even more preferably within the range of −15° to +15°. Eachgroove 156 may, if desired, extend from polishingregion 164 to a point coincident withrotational axis 128 or a point adjacent thereto, e.g., to aid in the distribution of a polishing medium when the polishing medium is applied to polishingpad 104 proximate its center. In addition, likegrooves 148, eachgroove 156 need not form a smooth and continuous curve, but rather may be straight, zigzag, wavy or sawtooth-shaped, among others. Also likegrooves 148, for eachgroove 156 having a zigzag, wavy, sawtooth-shape or like shape, angle α can be measured from a line that generally represents the transverse center of gravity of that groove. - Velocity vectors V3 and V4 of
wafer 112 in zone Z2 are perpendicular to velocity vectors V1 and V2 in zones Z3 and Z1, respectively. In order to makegrooves 152 in zone Z2 parallel, or nearly so, to velocity vectors V3 and V4, these grooves may be perpendicular, or substantially perpendicular, to inner andouter boundaries region 164, i.e., radial or nearly radial relative to rotational axis of polishingpad 104. In this connection, eachgroove 152 preferably forms an angle γ with eitherinner boundary 168 orouter boundary 172 of preferably 45° to 135°, more preferably 60° to 120° and even more preferably 75° to 105°. - Corresponding respective ones of
grooves 148,grooves 152 andgrooves 156 may, but need not, be connected with one another as shown so as to form continuous channels (one of which is highlighted inFIG. 3A and identified by element numeral 196) extending from a location proximaterotational axis 128 and through and beyond polishingregion 164. Providingcontinuous channels 196 as shown can be beneficial to slurry utilization and aid in the flushing of polish debris and removal of heat. Eachgroove 148 may be connected to a corresponding respective one ofgrooves 152 at afirst transition 200 and, likewise, eachgroove 152 may be connected to a corresponding respective one ofgrooves 156 at asecond transition 204. Each of first andsecond transitions grooves - Although polishing
region 164 has been described as being partitioned into three zones Z1-Z3, those skilled in the art will readily appreciate that the polishing region may be portioned into a greater number of zones if desired. However, regardless of the number of zones provided, the process of laying out the grooves, e.g.,grooves - For example, two additional zones (not shown), one between zones Z1 and Z2 and one between zones Z2 and Z3, may be added as follows. Four additional locations corresponding to four additional velocity vectors may first be determined using two additional circular arcs (each similar to circular arc 190) that are each concentric with
rotational axis 128 of polishingpad 104. One of the additional arcs may be located so as to intersectline 188 midway between location L1 androtational axis 136 ofwafer 112 and the other may be located so as to intersectline 188 midway between the rotational axis of the wafer and location L2. The additional locations for the velocity vectors could then be selected to be the four points where the two new circular arcs intersect outerperipheral edge 208 ofwafer 112. The two additional zones would then correspond to the two additional circular arcs in a manner similar to the correspondence of zone Z2 tocircular arc 190 and corresponding locations L3 and L4. The additional velocity vectors ofwafer 112 could then be determined for the four additional locations and new grooves oriented relative to the additional velocity vectors as discussed above relative togrooves -
FIGS. 3B and 3C each show apolishing pad groove pattern groove pattern 144 ofFIG. 3A that captures the underlying concepts of the present invention.FIG. 3B shows zones Z1′ and Z3′ as each partially containing asingle groove outer boundaries region 320. Of course,grooves FIG. 3A .FIG. 3B also shows zone Z2′ as containing a plurality of generally radial,curved grooves 324, wherein at any point therealong, each groove is largely perpendicular to inner andouter boundaries 312, 316 (and also largely perpendicular togrooves 304, 308). It can be readily seen thatgroove pattern 302 provides, in accordance with the present invention, groove 304 that is substantially parallel to velocity vector V1′, groove 308 that is substantially parallel to velocity vector V2′ andgrooves 324 that are substantially parallel to velocity vectors V3′ and V4′, so as to enhance the formation and extent of mixing wakes that form in zones Z1′-Z3′ during polishing. Width W′ may be apportioned among zones Z1′-Z3′ in any suitable manner, such as one-quarter W′/one-half W′/one-quarter W′ or one-third W′ to each, among others. - It is noted that, depending upon the configuration of
grooves respective grooves spiral grooves FIG. 3B . For example, in addition tocounterclockwise spiral grooves -
FIG. 3C shows zone Z1″ as containing a plurality ofgrooves 404 that are substantially spiral in shape relative to polishingpad 400. This configuration ofgrooves 404 enhances the establishment and extent of mixing wakes within zone Z1″ in a manner similar togrooves 148 ofFIG. 3A . Also,FIG. 3C shows zone Z3″ as containinggrooves 408 that are ring-shaped and concentric relative to polishingpad 400. Like the spiral configuration ofgrooves 404 enhances the ability of mixing wakes to form therein in zone Z1″, the circular configuration ofgrooves 408 enhances the ability of mixing wakes to form therein in zone Z3″. Of course,grooves FIG. 3A . -
FIG. 3C further shows zone Z2″ as containing a plurality ofradial grooves 424 that are each largely perpendicular to inner andouter boundaries FIGS. 3A and 3B , it can be readily seen thatgroove pattern 402 provides, in accordance with the present invention,grooves 408 that are substantially parallel to velocity vector V1″,grooves 404 that are substantially parallel to velocity vector V2″ andgrooves 424 that are substantially parallel to velocity vectors V3″ and V4″, so as to enhance the formation and extent of mixing wakes that form in these grooves during polishing. Width W″ may be apportioned among zones Z1″-Z3″ in any suitable manner, such as one-quarter W″/one-half W″/one-quarter W″ or one-third W″ to each, among others. -
FIG. 4 illustrates the present invention in the context of a continuous belt-type polishing pad 500. Likerotary polishing pads FIGS. 3A-3C , polishingpad 500 ofFIG. 4 includes a polishingregion 504 defined by afirst boundary 508 and asecond boundary 512 spaced from one another by a distance W′″ equal to or greater than the diameter of the polished surface (not shown) ofwafer 516, depending upon whether or not the wafer is oscillated in addition to rotated during polishing. Also similar torotary polishing pads region 504 may be partitioned into three zones Z1′″, Z2′″ and Z3′″ containing correspondinggrooves wafer 516, such as velocity vectors V1′″, V2′″, V3′″ and V4′″ located, respectively, at locations L1′″, L2′″, L3′″ and L4′″. Width W′″ of polishingregion 504 may be apportioned to zones Z1′″, Z2′″ and Z3′″ in the manner discussed above relative toFIG. 3A . - Other than the shape of polishing
region 504 being different from the shape of polishingregion 164 ofFIG. 3A (linear as opposed to circular) and the locations L3′″ and L4′″ ofFIG. 4 being different from locations L3 and L4 ofFIG. 3A in a similar manner, the principles underlying the selection of the orientations ofgrooves FIG. 3A . That is, it is desirable thatgrooves 520 in zone Z1′″ be parallel, or nearly so, to velocity vector V1′″,grooves 524 in zone Z2′″ be parallel, or nearly so, to velocity vectors V3′″ and V4′″ andgrooves 528 in zone Z3′″ be parallel, or nearly so, to velocity vector V2′″. These desires may be satisfied in the same manner as discussed above relative torotary polishing pads grooves 520 parallel, or substantially parallel tofirst boundary 508 of polishingregion 504, makinggrooves 524 perpendicular, or substantially perpendicular to, first andsecond boundaries grooves 528 parallel, or substantially parallel, tosecond boundary 512. - Generally, these goals may be satisfied by making
grooves 520 form an angle α′ withfirst boundary 508 of about −40° to +40°, more preferably within the range of −30° to +30°, and even more preferably within the range of −15° to +15°, makinggrooves 524 form an angle γ′ with first orsecond boundary grooves 528 form an angle β′ withsecond boundary 512 of about −40° to +40°, more preferably within the range of −30° to +30°, and even more preferably within the range of −15° to +15°. It is noted that althoughgrooves grooves grooves 424 ofFIG. 3C . Translatingradial grooves 424 ofFIG. 3C to belt-type polishing pad 500 ofFIG. 4 ,grooves 524 in zone Z2′″ would be linear and perpendicular to first andsecond boundaries grooves second transitions FIG. 3A .
Claims (10)
1. A polishing pad suitable for polishing at least one of magnetic, optical and semiconductor substrates, comprising:
(a) a polishing layer having a polishing region defined by a first boundary corresponding to a trajectory of a first point on the polishing pad and a second boundary defined by a trajectory of a second point on the polishing pad, the second boundary being spaced from the first boundary, a first zone proximate the second boundary, a second zone between the second boundary and the first boundary, and a third zone proximate the first boundary;
(b) at least one first small-angle groove at least partially contained within the polishing region proximate the first boundary and forming an angle of −40° to 40° relative to the first boundary at a point proximate the first boundary and in the third zone;
(c) at least one second small-angle groove at least partially contained within the polishing region proximate the second boundary and forming an angle of −40° to 40° relative to the second boundary at a point proximate the second boundary and in the first zone, and
(d) a plurality of large-angle grooves, each contained within the polishing region and located between the at least one first small-angle groove and the at least one second small angle groove and each of the plurality of large-angle grooves forming an angle of 45° to 135° relative to each of the first boundary and the second boundary, and in the second zone.
2. The polishing pad according to claim 1 , wherein the polishing pad is a rotary polishing pad rotatable about a rotational axis.
3. The polishing pad according to claim 2 , wherein each of the at least one first small-angle groove and the at least one second small-angle groove is a spiral groove.
4. The polishing pad according to claim 2 , wherein each of the plurality of large-angle grooves is radial relative to the rotational axis of the rotary polishing pad.
5. The polishing pad according to claim 1 , further comprising a plurality of first small-angle grooves, wherein each of the plurality of first small-angle grooves connects to a corresponding respective one of the plurality of large-angle grooves.
6. The polishing pad according to claim 5 , further comprising a plurality of second small-angle grooves, wherein each one of the plurality of large angle grooves connects at a first end to a corresponding respective one of the plurality of first small-angle grooves and connects at a second end to a corresponding respective one of the plurality of second small-angle grooves.
7. The polishing pad according to claim 1 , wherein the polishing pad is a linear belt.
8. The polishing pad of claim 1 , wherein the plurality of large-angle grooves form an angle of 60° to 120° relative to each of the first boundary and the second boundary, and in the second zone.
9. A method of polishing a magnetic, optical or semiconductor substrate, comprising the step of polishing the substrate with a polishing medium and the polishing pad of claim 1 .
10. The method according to claim 9 , wherein the polishing pad polishes a semiconductor wafer and the at least one first small-angle groove, the at least one second small-angle groove and the plurality of large-angle grooves are adjacent the semiconductor wafer simultaneously for at least a portion of the polishing.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/869,394 US6974372B1 (en) | 2004-06-16 | 2004-06-16 | Polishing pad having grooves configured to promote mixing wakes during polishing |
DE102005023469A DE102005023469A1 (en) | 2004-06-16 | 2005-05-20 | A polishing pad having grooves configured to promote mixing whirls during polishing |
TW094116738A TWI353906B (en) | 2004-06-16 | 2005-05-23 | Polishing pad having grooves configured to promote |
FR0551614A FR2871716B1 (en) | 2004-06-16 | 2005-06-14 | POLISHING PAD AND METHOD OF POLISHING AN OPTICAL OR SEMICONDUCTOR MAGNETIC SUBSTRATE |
KR1020050051594A KR101184628B1 (en) | 2004-06-16 | 2005-06-15 | Polishing pad having grooves configured to promote mixing wakes during polishing |
CNB2005100779488A CN100479992C (en) | 2004-06-16 | 2005-06-15 | Polishing seat with concave structure for improving mixed tail trace |
JP2005175892A JP4786946B2 (en) | 2004-06-16 | 2005-06-16 | Polishing pad with grooves arranged to promote mixed wake during polishing |
US11/236,948 US7108597B2 (en) | 2004-06-16 | 2005-09-28 | Polishing pad having grooves configured to promote mixing wakes during polishing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/869,394 US6974372B1 (en) | 2004-06-16 | 2004-06-16 | Polishing pad having grooves configured to promote mixing wakes during polishing |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/236,948 Division US7108597B2 (en) | 2004-06-16 | 2005-09-28 | Polishing pad having grooves configured to promote mixing wakes during polishing |
Publications (2)
Publication Number | Publication Date |
---|---|
US6974372B1 US6974372B1 (en) | 2005-12-13 |
US20050282479A1 true US20050282479A1 (en) | 2005-12-22 |
Family
ID=35452479
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/869,394 Active US6974372B1 (en) | 2004-06-16 | 2004-06-16 | Polishing pad having grooves configured to promote mixing wakes during polishing |
US11/236,948 Active US7108597B2 (en) | 2004-06-16 | 2005-09-28 | Polishing pad having grooves configured to promote mixing wakes during polishing |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/236,948 Active US7108597B2 (en) | 2004-06-16 | 2005-09-28 | Polishing pad having grooves configured to promote mixing wakes during polishing |
Country Status (7)
Country | Link |
---|---|
US (2) | US6974372B1 (en) |
JP (1) | JP4786946B2 (en) |
KR (1) | KR101184628B1 (en) |
CN (1) | CN100479992C (en) |
DE (1) | DE102005023469A1 (en) |
FR (1) | FR2871716B1 (en) |
TW (1) | TWI353906B (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7377840B2 (en) * | 2004-07-21 | 2008-05-27 | Neopad Technologies Corporation | Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7266568B1 (en) * | 2003-04-11 | 2007-09-04 | Ricoh Company, Ltd. | Techniques for storing multimedia information with source documents |
US6974372B1 (en) * | 2004-06-16 | 2005-12-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having grooves configured to promote mixing wakes during polishing |
TWI385050B (en) | 2005-02-18 | 2013-02-11 | Nexplanar Corp | Customized polishing pads for cmp and methods of fabrication and use thereof |
KR100721196B1 (en) * | 2005-05-24 | 2007-05-23 | 주식회사 하이닉스반도체 | Polishing pad and using chemical mechanical polishing apparatus |
US7311590B1 (en) | 2007-01-31 | 2007-12-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to retain slurry on the pad texture |
US7520798B2 (en) * | 2007-01-31 | 2009-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to reduce slurry consumption |
JP5284610B2 (en) * | 2007-08-20 | 2013-09-11 | 八千代マイクロサイエンス株式会社 | Rotating surface plate for double-sided lapping machine |
US9180570B2 (en) | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
TWI492818B (en) * | 2011-07-12 | 2015-07-21 | Iv Technologies Co Ltd | Polishing pad, polishing method and polishing system |
US20140024299A1 (en) * | 2012-07-19 | 2014-01-23 | Wen-Chiang Tu | Polishing Pad and Multi-Head Polishing System |
TWI599447B (en) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | Cmp polishing pad having edge exclusion region of offset concentric groove pattern |
CN103769995B (en) * | 2013-12-31 | 2017-01-25 | 于静 | Lower grinding disc structure |
TWI549781B (en) * | 2015-08-07 | 2016-09-21 | 智勝科技股份有限公司 | Polishing pad, polishing system and polishing method |
CN111941251A (en) * | 2020-07-08 | 2020-11-17 | 上海新昇半导体科技有限公司 | Polishing pad, polishing equipment and polishing method of silicon wafer |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5690540A (en) * | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US5990012A (en) * | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
US6159088A (en) * | 1998-02-03 | 2000-12-12 | Sony Corporation | Polishing pad, polishing apparatus and polishing method |
US6273806B1 (en) * | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US6315857B1 (en) * | 1998-07-10 | 2001-11-13 | Mosel Vitelic, Inc. | Polishing pad shaping and patterning |
US6354919B2 (en) * | 1999-08-31 | 2002-03-12 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6685548B2 (en) * | 2000-06-29 | 2004-02-03 | International Business Machines Corporation | Grooved polishing pads and methods of use |
US6783436B1 (en) * | 2003-04-29 | 2004-08-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with optimized grooves and method of forming same |
US6843711B1 (en) * | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
US6843709B1 (en) * | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for reducing slurry reflux |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE398709A (en) * | 1932-09-22 | |||
FR2365411A1 (en) * | 1976-09-27 | 1978-04-21 | Robert Jean | SANDPAPER DISC SANDER MOUNTED ON A ROTATING CIRCULAR PLATE |
JPS63237865A (en) * | 1987-03-25 | 1988-10-04 | Matsushima Kogyo Co Ltd | Surface plate for rotary polishing machine |
JP2000237950A (en) * | 1999-02-18 | 2000-09-05 | Nec Corp | Polishing pad for semiconductor wafer, and manufacture of semiconductor device |
US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
KR20020022198A (en) | 2000-09-19 | 2002-03-27 | 윤종용 | Chemical Mechanical Polishing apparatus comprising a polishing pad having non-linear track on the surface thereof |
KR100646702B1 (en) * | 2001-08-16 | 2006-11-17 | 에스케이씨 주식회사 | Chemical mechanical polishing pad having holes and/or grooves |
US6955587B2 (en) * | 2004-01-30 | 2005-10-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Grooved polishing pad and method |
US6974372B1 (en) * | 2004-06-16 | 2005-12-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having grooves configured to promote mixing wakes during polishing |
-
2004
- 2004-06-16 US US10/869,394 patent/US6974372B1/en active Active
-
2005
- 2005-05-20 DE DE102005023469A patent/DE102005023469A1/en not_active Ceased
- 2005-05-23 TW TW094116738A patent/TWI353906B/en active
- 2005-06-14 FR FR0551614A patent/FR2871716B1/en not_active Expired - Fee Related
- 2005-06-15 KR KR1020050051594A patent/KR101184628B1/en active IP Right Grant
- 2005-06-15 CN CNB2005100779488A patent/CN100479992C/en not_active Expired - Fee Related
- 2005-06-16 JP JP2005175892A patent/JP4786946B2/en active Active
- 2005-09-28 US US11/236,948 patent/US7108597B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5690540A (en) * | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6273806B1 (en) * | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US6520847B2 (en) * | 1997-05-15 | 2003-02-18 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in chemical mechanical polishing |
US5990012A (en) * | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
US6159088A (en) * | 1998-02-03 | 2000-12-12 | Sony Corporation | Polishing pad, polishing apparatus and polishing method |
US6315857B1 (en) * | 1998-07-10 | 2001-11-13 | Mosel Vitelic, Inc. | Polishing pad shaping and patterning |
US6354919B2 (en) * | 1999-08-31 | 2002-03-12 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6685548B2 (en) * | 2000-06-29 | 2004-02-03 | International Business Machines Corporation | Grooved polishing pads and methods of use |
US6783436B1 (en) * | 2003-04-29 | 2004-08-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with optimized grooves and method of forming same |
US6843711B1 (en) * | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
US6843709B1 (en) * | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for reducing slurry reflux |
Also Published As
Publication number | Publication date |
---|---|
US7108597B2 (en) | 2006-09-19 |
CN100479992C (en) | 2009-04-22 |
TW200602157A (en) | 2006-01-16 |
US20060025061A1 (en) | 2006-02-02 |
DE102005023469A1 (en) | 2006-03-16 |
US6974372B1 (en) | 2005-12-13 |
CN1712187A (en) | 2005-12-28 |
TWI353906B (en) | 2011-12-11 |
KR101184628B1 (en) | 2012-09-21 |
JP2006007412A (en) | 2006-01-12 |
KR20060048390A (en) | 2006-05-18 |
FR2871716A1 (en) | 2005-12-23 |
JP4786946B2 (en) | 2011-10-05 |
FR2871716B1 (en) | 2008-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7108597B2 (en) | Polishing pad having grooves configured to promote mixing wakes during polishing | |
US6955587B2 (en) | Grooved polishing pad and method | |
KR101107636B1 (en) | Chemical mechanical polishing pad having a process-dependent groove configuration | |
US7125318B2 (en) | Polishing pad having a groove arrangement for reducing slurry consumption | |
US8057282B2 (en) | High-rate polishing method | |
US7156721B2 (en) | Polishing pad with flow modifying groove network | |
US7131895B2 (en) | CMP pad having a radially alternating groove segment configuration | |
KR20100074044A (en) | High-rate groove pattern | |
WO2005118223A1 (en) | Polishing pad with oscillating path groove network | |
JP4996924B2 (en) | Chemical mechanical polishing method with reduced slurry reflux |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, I Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MULDOWNEY, GREGORY P.;REEL/FRAME:015390/0605 Effective date: 20040615 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |