US20060057764A1 - Image sensor and fabricating method thereof - Google Patents

Image sensor and fabricating method thereof Download PDF

Info

Publication number
US20060057764A1
US20060057764A1 US10/711,377 US71137704A US2006057764A1 US 20060057764 A1 US20060057764 A1 US 20060057764A1 US 71137704 A US71137704 A US 71137704A US 2006057764 A1 US2006057764 A1 US 2006057764A1
Authority
US
United States
Prior art keywords
layer
substrate
silicon
over
sensing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10/711,377
Other versions
US7060592B2 (en
Inventor
Jui-Hsiang Pan
Cheng-Kuang Sun
Kuang-Chih Cheng
Kuang-Shin Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to US10/711,377 priority Critical patent/US7060592B2/en
Assigned to UNITED MICROELECTRONICS CORP. reassignment UNITED MICROELECTRONICS CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHENG, KUANG-CHIH, LEE, KUANG-SHIN, PAN, JUI-HSIANG, SUN, CHENG-KUANG
Priority to US11/308,330 priority patent/US20060180860A1/en
Publication of US20060057764A1 publication Critical patent/US20060057764A1/en
Application granted granted Critical
Publication of US7060592B2 publication Critical patent/US7060592B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to an optical device and a fabricating method thereof. More specifically, the present invention relates to an image sensor and a fabricating method thereof.
  • CMOS image sensor complementary metal oxide semiconductor image sensors Due to low cost, low power consumption, random access ability and high integration ability, CMOS image sensors are widely used in popular products, such as camera phone and web-cameras.
  • FIG. 1 illustrates a schematic cross-sectional view of a conventional CMOS image sensor.
  • sensing devices 120 of a conventional CMOS image sensor 100 are formed in a substrate 102 , wherein the sensing devices 120 comprise a plurality of photo diodes with p-n junctions formed in the substrate 102 .
  • the sensing devices 120 formed in the substrate 102 comprise n-type doped regions, p-type doped regions and p-n junctions formed between the n-type doped regions and the p-type doped regions.
  • An interconnection layer 104 comprising a plurality of metal interconnections and a plurality of inter-dielectric layers (not shown in figure) therebetween are formed on the substrate 102 .
  • An electrical signal representing image information received by the sensing devices 120 is transmitted to a printed circuit board (PCB) 110 via the metal interconnections, in order to process the received image information.
  • a plurality of color filters 132 arranged in an area array are disposed on the interconnection layer 104 , wherein each color filter 132 is aligned with one of the sensing devices 120 , respectively.
  • a plurality of micro-lenses 130 performing the function of condensing light are disposed over the color filters 132 .
  • a glass substrate 134 disposed above the micro-lenses 130 , is connected to the interconnection layer 104 by a spacer 150 .
  • the light 140 which passes through the micro-lenses 130 , the color filters 132 and the interconnection layer 104 , is received by the sensing devices 120 . Therefore, the layout of the metal interconnections (not shown in figure) should not overlap an area above the sensing devices 120 in order to improve the sensitivity of the sensing devices 120 . However, this makes the layout design complicated.
  • the light 140 coming from the outside environment after passing through the interconnection layer 104 is degraded because it is partially shielded (absorbed or reflected) by the inter-dielectric layers of the interconnection layer 104 , and thereby the sensitivity of the sensing devices 120 is affected significantly.
  • the sensing devices 120 receive the light 140 coming from the outside environment after it passes through the interconnection layer 104 . Therefore, the conventional CMOS image sensor 100 has a low fill rate and contrast ratio (CR). Furthermore, the yield rate of the conventional CMOS image sensor 100 is also low.
  • the present invention provides a method of fabricating an image sensor, which has a high contrast ratio, which in turn, improves yield rate during the fabricating processes.
  • the invention provides an image sensor, which has a high contrast ratio and a small size (thickness).
  • the invention provides a method of fabricating an image device.
  • a silicon-on-insulating layer is formed over a substrate, the silicon-on-insulating layer has a first surface and a second surface in contact with the substrate.
  • An image sensing device layer is then formed over the first surface of the silicon-on-insulating layer.
  • a first substrate is disposed over the image sensing device layer. Sequentially, the first substrate, the image sensing device layer and the silicon-on-insulating layer are lifted from the substrate in order to expose the second surface of the silicon-on-insulating layer. Thereafter, an optical device array is formed over the second surface of the silicon-on-insulating layer.
  • a second substrate is disposed over the optical device array after forming the optical device array, wherein a material of the first substrate and the second substrate is, for example, glass or such other material.
  • a spacer is formed over the second surface of the silicon-on-insulating layer before disposing the second substrate.
  • the second substrate is disposed over the spacer. This is done in order to ensure that the second substrate is held over the optical device array by the spacer.
  • the first substrate is removed so as to expose the image sensing device layer after forming the optical device array.
  • the image sensing device layer is electrically connected to a printed circuit board after removing the first substrate.
  • the image sensing device layer and the printed circuit board are electrically connected by forming a re-distribution layer over the image sensing device layer, and then electrically connecting the re-distribution layer to the printed circuit board.
  • the re-distribution layer and the printed circuit board are electrically connected by performing a bumping process in order to form a plurality of bumps over the re-distribution layer, and then electrically connecting the bumps to the printed circuit board, wherein each bump is electrically connected to the re-distribution layer.
  • the optical device array over the second surface of the silicon-on-insulating layer is formed by forming a plurality of color filters over the second surface of the silicon-on-insulating layer, and then forming a condenser, such as micro-lenses, over each color filter.
  • the image sensing device layer is formed by performing the following steps: Firstly, an active layer is formed over the first surface of the silicon-on-insulating layer, wherein the active layer comprises a sensing device, such as a photo diode, therein. Next, an interconnection layer is formed over the active layer, wherein the interconnection layer is electrically connected to the sensing device. Thereafter, a plurality of bonding pads are formed over the interconnection layer, wherein each bonding pad is electrically connected to the interconnection layer.
  • a cutting process is performed to form a plurality of image sensor units after forming the optical device array.
  • the invention provides an image sensor.
  • the image sensor includes a silicon-on-insulating layer having a first surface and a second surface, an image sensing device layer disposed over the first surface of the silicon-on-insulating layer, an optical device array disposed over the second surface of the silicon-on-insulating layer, and a substrate disposed over the second surface of the silicon-on-insulating layer, wherein the optical device array is located between the substrate and the silicon-on-insulating layer.
  • the image sensing device layer comprises an active layer disposed over the first surface of the silicon-on-insulating layer, an interconnection layer disposed over the active layer, and a plurality of bonding pads disposed over the interconnection layer, wherein each bonding pad is electrically connected to the interconnection layer.
  • the active layer of the image sensing device layer comprises at least one sensing device therein, wherein the sensing device comprises at least one photo diode having n-type doped regions, p-type doped regions and p-n junctions formed between the n-type doped regions and the p-type doped regions.
  • the optical device array comprises a plurality of color filters and a plurality of condensers, such as micro-lenses, wherein each condenser is disposed over one of the color filters, respectively.
  • the image sensor further comprises a spacer disposed between the second surface of the silicon-on-insulating layer and the substrate in order to hold the substrate above the optical device array.
  • the image sensor further comprises a re-distribution layer disposed over the first surface of the silicon-on-insulating layer, wherein the re-distribution layer is disposed on the image sensing device layer and is electrically connected to the bonding pads.
  • the image sensor further comprises a plurality of bumps disposed over the re-distribution layer, wherein each bump is electrically connected to the re-distribution layer.
  • the sensing devices in the image sensing device layer directly receive the light passing through the SOI layer which has a small thickness.
  • an electrical signal which represents image information received by the sensing devices, is output to a printed circuit board through bonding pads and bumps. Therefore, the degradation of the light resulting from absorption or reflection by the inter-dielectric layer and the metal layer of the interconnection layer does not occur, and thereby the sensitivity of the sensing devices is improved significantly. Furthermore, the complexity of the fabrication process is lowered as layout of conductive layers can be distributed over the entire area of the image sensing device layer.
  • FIG. 1 illustrates a schematic cross-sectional view of a conventional CMOS image sensor.
  • FIG. 2A to FIG. 2E are schematic illustrations of the fabricating process of a CMOS image sensor in accordance with an embodiment of the present invention.
  • FIG. 2F is a schematic illustration of a printed circuit board (PCB) used for carrying the CMOS image sensor illustrated in FIG. 2E .
  • PCB printed circuit board
  • CMOS image sensor which has a short path over which incident light passes, is fabricated using a process, which enhances the optical performance of the image sensor.
  • a CMOS image sensor is merely an example used for explaining the design and working of the present invention. Applications of the present invention are not limited to CMOS image sensors.
  • FIG. 2A to FIG. 2E are schematic illustrations of the fabricating process of a CMOS image sensor in accordance with an embodiment of the present invention.
  • a silicon on insulator layer (SOI layer) 202 which has a first surface 202 a and a second surface 202 b is formed over a substrate 200 .
  • the substrate 200 is, for example, a silicon wafer.
  • the fabricating process of the SOI layer 202 is a conventional process, which is well known by persons skilled in the art. Therefore, details of the fabricating process are not included herein.
  • an image sensing device layer 204 is formed over the first surface 202 a of the SOI layer 202 .
  • the image sensing device layer 204 comprises, an active layer 204 a , an interconnection layer 204 b and bonding pads 204 c .
  • the image sensing device layer 204 is illustrated in the upper portion of FIG. 2B .
  • the interconnection layer 204 b comprises a plurality of metal layers (shown by cross-hatching in the interconnection layer 204 b in FIG. 2B ), wherein the metal layers are electrically connected to the bonding pads 204 c . Therefore, signal output from the active layer 204 a is transmitted through the metal layers.
  • the sensing device 220 of the CMOS image sensor of the present invention comprises, photo diodes including n-type doped regions, p-type doped regions and p-n junctions formed in the active layer 204 a.
  • a first substrate 206 a is disposed over the image sensing device layer 204 .
  • the SOI layer 202 , the image sensing device layer 204 and the first substrate 206 a are lifted from the substrate 200 , and are rotated 180 degrees along the direction of an arrow 233 in order to expose the second surface 202 b of the SOI layer 202 (illustrated in FIG. 2D ).
  • a material of the first substrate 206 a comprises, glass or other such materials.
  • an optical device array 230 is formed over the second surface 202 b of the SOI layer 202 .
  • a second substrate 206 b is disposed over the optical device array 230 to accomplish the fabricating process of the CMOS image sensor 260 .
  • a material of the second substrate 206 b is, the same as the material of the first substrate 206 a.
  • the optical device array 230 comprises a plurality of color filters 232 arranged in an area array and a plurality of condensers 234 .
  • Each color filter 232 is disposed over one of the sensing devices 220 formed in the active layer 204 c
  • each condenser 234 is disposed over one of the color filters 232 , respectively.
  • the condensers 234 focus the incident light coming from the outside environment on color filters 232 . After passing through the color filters 232 , the incident light is received by sensing devices 220 in the active layer 204 c (illustrated in FIG. 2B ), which is under the color filters 232 .
  • the color filters 232 comprise, a plurality of color filter films, which permit light of a certain wavelength to pass through.
  • the condensers 234 comprise, a plurality of micro-lenses arranged in an area array.
  • a spacer 250 is formed over the second surface 202 b of the SOI layer 202 before disposing the second substrate 206 b .
  • the spacer 250 holds the second substrate 206 b above the optical device array 230 .
  • the image sensor of the present invention is formed by performing the process described above. It is well known in the art, that a cutting process can be performed to obtain a plurality of image sensor units, when the substrate 200 is a silicon wafer.
  • the structure of an image sensor unit obtained after performing the cutting process is similar to the structure illustrated in FIG. 2E .
  • CMOS image sensor 260 illustrated in FIG. 2E is formed, it is disposed on a printed circuit board 210 .
  • the assembly process is described herein.
  • FIG. 2F is a schematic illustration of a printed circuit board (PCB) used for carrying the CMOS image sensor illustrated in FIG. 2E .
  • a first substrate 206 a is removed to expose the image sensing device layer 204 . More specifically, after removing the first substrate 206 a , the structure comprising the SOI layer 202 , the image sensing device layer 204 and the second substrate 206 b is rotated 180 degrees to form a plurality of bumps 214 by performing a bumping process.
  • the CMOS image sensor 260 is electrically connected to the printed circuit board 210 through the bumps 214 therebetween. Therefore, an electrical signal, which represents image information received by the sensing devices 220 , is transmitted to a printed circuit board 210 through the metal layers, the bonding pads 204 c and the bumps 214 in the interconnection layer 204 b.
  • a re-distribution layer 216 is formed over the image sensing device layer 204 to re-distribute the position of the bumps 214 , and thereby the position of the bonding pads 204 c is optimized to prevent stress.
  • the bumps 214 are formed over the nodes of the re-distribution layer 216 and are electrically connected to the bonding pads 204 c through the conductive layers (not shown in figure) within the re-distribution layer 216 .
  • the optical performance of the image sensor which is fabricated using the process described in the present invention, is enhanced because degradation of the incident light is reduced.
  • the image sensor of the present invention such as a CMOS image sensor, is described in detail with reference to the accompanying drawings.
  • the CMOS image sensor 260 comprises an image sensing device layer 204 , a silicon-on-insulating layer 202 , an optical device array 230 and a second substrate 206 b .
  • the silicon-on-insulating layer 202 has a first surface 202 a and a second surface 202 b .
  • the image sensing device layer 204 is disposed over the first surface 202 a of the silicon-on-insulating layer 202 .
  • the image sensing device layer 204 comprises an active layer 204 a , an interconnection layer 204 b and bonding pads 204 c .
  • the bonding pads 204 c are electrically connected to the interconnection layer 204 b .
  • the sensing device 220 of the CMOS image sensor 260 is a photo diode formed in the active layer 204 a.
  • the optical device array 230 is disposed over the second surface 202 b of the silicon-on-insulating layer 202 .
  • the optical device array 230 comprises a plurality of color filters arranged in an area array and a plurality of condensers.
  • Each color filter 232 is disposed over one of the sensing devices 220 within the active layer 204 a
  • each condenser 234 is disposed over one of the color filters 232 , respectively.
  • the condensers 234 focus the incident light coming from the outside environment on color filters 232 . After the incident light passes through the color filters 232 , it is received by the sensing devices 220 present in the active layer 204 c , which is under the color filters 232 .
  • a second substrate 206 b is disposed over the optical device array 230 and is held above the optical device array 230 by the spacer 250 .
  • the spacer 250 is disposed over the second surface 202 b of the SOI layer 202 .
  • the CMOS image sensor is electrically connected to the printed circuit board 210 through the re-distribution layer 216 disposed over the image sensing device layer and the bumps 214 , as illustrated in FIG. 2F .
  • sensing devices in an image sensing device layer directly receive the light passing through a SOI layer, which has a small thickness.
  • an electrical signal which represents image information received by the sensing devices, is output to a printed circuit board through bonding pads and bumps. Therefore, the degradation of the light resulting from absorption or reflection by an inter-dielectric layer and a metal layer of an interconnection layer occurring in a conventional image sensor, does not occur in the CMOS image sensor of the present invention. Thereby the sensitivity of the sensing devices of the CMOS image sensor of the present invention is improved significantly. Furthermore, the complexity of the process of fabricating the CMOS image sensor device is lowered as layout of conductive layers can be distributed over the entire area of the image sensing device layer.
  • the substrate of the CMOS image sensor is fabricated using SOI technology, the total thickness of the CMOS image sensor is smaller than (about 1.6%) that of prior art CMOS image sensors.
  • a substrate with a total thickness of 700 micrometers is usually utilized, whereas the CMOS image sensor of the present invention, utilizes a substrate with a total thickness of 11 micrometers.
  • the process for fabricating the CMOS image sensor of the present invention is compatible with the conventional process, and no investment for new equipment or establishment is required to be made.
  • the process used for fabricating the CMOS image sensor in accordance with the present invention also improves the yield of the CMOS image sensor.

Abstract

An image sensor comprising an image sensing device layer, a silicon-on-insulator (SOI) layer, an optical device array and a substrate is provided. The SOI layer has a first surface and a second surface. The image sensing device layer is formed on the first surface of the SOI layer. The optical device array is formed on the second surface of the SOI layer. The substrate is disposed above the second surface of the SOI layer and the optical device array is disposed between the substrate and the SOI layer. An incident light coming from the outside environment, passes through the optical device array and the SOI layer, and is received by sensing devices formed in the image sensing device layer. In this manner, the probability of absorption or reflection of the incident light is reduced. Therefore, the sensing performance and the yield of the image sensor of the present invention is improved.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of Invention
  • The present invention relates to an optical device and a fabricating method thereof. More specifically, the present invention relates to an image sensor and a fabricating method thereof.
  • 2. Description of Related Art
  • With the popularization of multimedia, various digital image devices have been developed sequentially. An image sensor being a key component of digital image devices has gained significant importance. The function of an image sensor is to transform image information into electrical signals. Image sensors may be categorized into various types, such as charge coupled device image sensors (CCD image sensor), complementary metal oxide semiconductor image sensors (CMOS image sensor) etc. Due to low cost, low power consumption, random access ability and high integration ability, CMOS image sensors are widely used in popular products, such as camera phone and web-cameras.
  • FIG. 1 illustrates a schematic cross-sectional view of a conventional CMOS image sensor. Referring to FIG. 1, sensing devices 120 of a conventional CMOS image sensor 100 are formed in a substrate 102, wherein the sensing devices 120 comprise a plurality of photo diodes with p-n junctions formed in the substrate 102. More specifically, the sensing devices 120 formed in the substrate 102 comprise n-type doped regions, p-type doped regions and p-n junctions formed between the n-type doped regions and the p-type doped regions. An interconnection layer 104 comprising a plurality of metal interconnections and a plurality of inter-dielectric layers (not shown in figure) therebetween are formed on the substrate 102. An electrical signal representing image information received by the sensing devices 120 is transmitted to a printed circuit board (PCB) 110 via the metal interconnections, in order to process the received image information. A plurality of color filters 132 arranged in an area array are disposed on the interconnection layer 104, wherein each color filter 132 is aligned with one of the sensing devices 120, respectively. In addition, a plurality of micro-lenses 130 performing the function of condensing light, are disposed over the color filters 132. Furthermore, a glass substrate 134, disposed above the micro-lenses 130, is connected to the interconnection layer 104 by a spacer 150.
  • The light 140, which passes through the micro-lenses 130, the color filters 132 and the interconnection layer 104, is received by the sensing devices 120. Therefore, the layout of the metal interconnections (not shown in figure) should not overlap an area above the sensing devices 120 in order to improve the sensitivity of the sensing devices 120. However, this makes the layout design complicated.
  • Furthermore, the light 140 coming from the outside environment after passing through the interconnection layer 104 is degraded because it is partially shielded (absorbed or reflected) by the inter-dielectric layers of the interconnection layer 104, and thereby the sensitivity of the sensing devices 120 is affected significantly.
  • As described above, the sensing devices 120 receive the light 140 coming from the outside environment after it passes through the interconnection layer 104. Therefore, the conventional CMOS image sensor 100 has a low fill rate and contrast ratio (CR). Furthermore, the yield rate of the conventional CMOS image sensor 100 is also low.
    • SUMMARY OF THE INVENTION
  • The present invention provides a method of fabricating an image sensor, which has a high contrast ratio, which in turn, improves yield rate during the fabricating processes.
  • The invention provides an image sensor, which has a high contrast ratio and a small size (thickness).
  • As embodied and broadly described herein, the invention provides a method of fabricating an image device. First, a silicon-on-insulating layer is formed over a substrate, the silicon-on-insulating layer has a first surface and a second surface in contact with the substrate. An image sensing device layer is then formed over the first surface of the silicon-on-insulating layer. Next, a first substrate is disposed over the image sensing device layer. Sequentially, the first substrate, the image sensing device layer and the silicon-on-insulating layer are lifted from the substrate in order to expose the second surface of the silicon-on-insulating layer. Thereafter, an optical device array is formed over the second surface of the silicon-on-insulating layer.
  • In accordance with an embodiment of the present invention, a second substrate is disposed over the optical device array after forming the optical device array, wherein a material of the first substrate and the second substrate is, for example, glass or such other material. In accordance with another embodiment of the present invention, a spacer is formed over the second surface of the silicon-on-insulating layer before disposing the second substrate. Next, the second substrate is disposed over the spacer. This is done in order to ensure that the second substrate is held over the optical device array by the spacer.
  • In accordance with an embodiment of the present invention, the first substrate is removed so as to expose the image sensing device layer after forming the optical device array. In accordance with another embodiment of the present invention, the image sensing device layer is electrically connected to a printed circuit board after removing the first substrate. The image sensing device layer and the printed circuit board are electrically connected by forming a re-distribution layer over the image sensing device layer, and then electrically connecting the re-distribution layer to the printed circuit board. In accordance with yet another embodiment of the present invention, the re-distribution layer and the printed circuit board are electrically connected by performing a bumping process in order to form a plurality of bumps over the re-distribution layer, and then electrically connecting the bumps to the printed circuit board, wherein each bump is electrically connected to the re-distribution layer.
  • In accordance with an embodiment of the present invention, the optical device array over the second surface of the silicon-on-insulating layer is formed by forming a plurality of color filters over the second surface of the silicon-on-insulating layer, and then forming a condenser, such as micro-lenses, over each color filter.
  • In accordance with an embodiment of the present invention, the image sensing device layer is formed by performing the following steps: Firstly, an active layer is formed over the first surface of the silicon-on-insulating layer, wherein the active layer comprises a sensing device, such as a photo diode, therein. Next, an interconnection layer is formed over the active layer, wherein the interconnection layer is electrically connected to the sensing device. Thereafter, a plurality of bonding pads are formed over the interconnection layer, wherein each bonding pad is electrically connected to the interconnection layer.
  • In accordance with an embodiment of the present invention, a cutting process is performed to form a plurality of image sensor units after forming the optical device array.
  • As embodied and broadly described herein, the invention provides an image sensor. The image sensor includes a silicon-on-insulating layer having a first surface and a second surface, an image sensing device layer disposed over the first surface of the silicon-on-insulating layer, an optical device array disposed over the second surface of the silicon-on-insulating layer, and a substrate disposed over the second surface of the silicon-on-insulating layer, wherein the optical device array is located between the substrate and the silicon-on-insulating layer.
  • In accordance with an embodiment of the present invention, the image sensing device layer comprises an active layer disposed over the first surface of the silicon-on-insulating layer, an interconnection layer disposed over the active layer, and a plurality of bonding pads disposed over the interconnection layer, wherein each bonding pad is electrically connected to the interconnection layer.
  • In accordance with an embodiment of the present invention, the active layer of the image sensing device layer comprises at least one sensing device therein, wherein the sensing device comprises at least one photo diode having n-type doped regions, p-type doped regions and p-n junctions formed between the n-type doped regions and the p-type doped regions.
  • In accordance with an embodiment of the present invention, the optical device array comprises a plurality of color filters and a plurality of condensers, such as micro-lenses, wherein each condenser is disposed over one of the color filters, respectively.
  • In accordance with an embodiment of the present invention, the image sensor further comprises a spacer disposed between the second surface of the silicon-on-insulating layer and the substrate in order to hold the substrate above the optical device array.
  • In accordance with an embodiment of the present invention, the image sensor further comprises a re-distribution layer disposed over the first surface of the silicon-on-insulating layer, wherein the re-distribution layer is disposed on the image sensing device layer and is electrically connected to the bonding pads. In accordance with another embodiment of the present invention, the image sensor further comprises a plurality of bumps disposed over the re-distribution layer, wherein each bump is electrically connected to the re-distribution layer.
  • In the image sensor of the present invention, the sensing devices in the image sensing device layer directly receive the light passing through the SOI layer which has a small thickness. Next, an electrical signal, which represents image information received by the sensing devices, is output to a printed circuit board through bonding pads and bumps. Therefore, the degradation of the light resulting from absorption or reflection by the inter-dielectric layer and the metal layer of the interconnection layer does not occur, and thereby the sensitivity of the sensing devices is improved significantly. Furthermore, the complexity of the fabrication process is lowered as layout of conductive layers can be distributed over the entire area of the image sensing device layer.
  • It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings are included to provide further understanding of the present invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
  • FIG. 1 illustrates a schematic cross-sectional view of a conventional CMOS image sensor.
  • FIG. 2A to FIG. 2E are schematic illustrations of the fabricating process of a CMOS image sensor in accordance with an embodiment of the present invention.
  • FIG. 2F is a schematic illustration of a printed circuit board (PCB) used for carrying the CMOS image sensor illustrated in FIG. 2E.
    • DESCRIPTION OF THE EMBODIMENTS
  • The image sensor of the present invention, which has a short path over which incident light passes, is fabricated using a process, which enhances the optical performance of the image sensor. A CMOS image sensor is merely an example used for explaining the design and working of the present invention. Applications of the present invention are not limited to CMOS image sensors.
  • FIG. 2A to FIG. 2E are schematic illustrations of the fabricating process of a CMOS image sensor in accordance with an embodiment of the present invention. Referring to FIG. 2A, first, a silicon on insulator layer (SOI layer) 202, which has a first surface 202 a and a second surface 202 b is formed over a substrate 200. The substrate 200 is, for example, a silicon wafer. In accordance with an embodiment of the present invention, the fabricating process of the SOI layer 202 is a conventional process, which is well known by persons skilled in the art. Therefore, details of the fabricating process are not included herein.
  • Referring to FIG. 2B, an image sensing device layer 204 is formed over the first surface 202 a of the SOI layer 202. The image sensing device layer 204 comprises, an active layer 204 a, an interconnection layer 204 b and bonding pads 204 c. The image sensing device layer 204 is illustrated in the upper portion of FIG. 2B. In accordance with an embodiment of the present invention, the interconnection layer 204 b comprises a plurality of metal layers (shown by cross-hatching in the interconnection layer 204 b in FIG. 2B), wherein the metal layers are electrically connected to the bonding pads 204 c. Therefore, signal output from the active layer 204 a is transmitted through the metal layers. More specifically, the sensing device 220 of the CMOS image sensor of the present invention comprises, photo diodes including n-type doped regions, p-type doped regions and p-n junctions formed in the active layer 204 a.
  • Referring to FIG. 2C and FIG. 2D, first, a first substrate 206 a is disposed over the image sensing device layer 204. Next, the SOI layer 202, the image sensing device layer 204 and the first substrate 206 a are lifted from the substrate 200, and are rotated 180 degrees along the direction of an arrow 233 in order to expose the second surface 202 b of the SOI layer 202 (illustrated in FIG. 2D). In accordance with an embodiment of the present invention, a material of the first substrate 206 a comprises, glass or other such materials.
  • Referring to FIG. 2E, an optical device array 230 is formed over the second surface 202 b of the SOI layer 202. Next, a second substrate 206 b is disposed over the optical device array 230 to accomplish the fabricating process of the CMOS image sensor 260. In accordance with an embodiment of the present invention, a material of the second substrate 206 b is, the same as the material of the first substrate 206 a.
  • The optical device array 230 comprises a plurality of color filters 232 arranged in an area array and a plurality of condensers 234. Each color filter 232 is disposed over one of the sensing devices 220 formed in the active layer 204 c, and each condenser 234 is disposed over one of the color filters 232, respectively. The condensers 234 focus the incident light coming from the outside environment on color filters 232. After passing through the color filters 232, the incident light is received by sensing devices 220 in the active layer 204 c (illustrated in FIG. 2B), which is under the color filters 232. In accordance with an embodiment of the present invention, the color filters 232 comprise, a plurality of color filter films, which permit light of a certain wavelength to pass through. The condensers 234 comprise, a plurality of micro-lenses arranged in an area array. Furthermore, a spacer 250 is formed over the second surface 202 b of the SOI layer 202 before disposing the second substrate 206 b. The spacer 250 holds the second substrate 206 b above the optical device array 230.
  • The image sensor of the present invention is formed by performing the process described above. It is well known in the art, that a cutting process can be performed to obtain a plurality of image sensor units, when the substrate 200 is a silicon wafer. The structure of an image sensor unit obtained after performing the cutting process is similar to the structure illustrated in FIG. 2E.
  • After the CMOS image sensor 260 illustrated in FIG. 2E is formed, it is disposed on a printed circuit board 210. The assembly process is described herein.
  • FIG. 2F is a schematic illustration of a printed circuit board (PCB) used for carrying the CMOS image sensor illustrated in FIG. 2E. Referring to FIG. 2F, a first substrate 206 a is removed to expose the image sensing device layer 204. More specifically, after removing the first substrate 206 a, the structure comprising the SOI layer 202, the image sensing device layer 204 and the second substrate 206 b is rotated 180 degrees to form a plurality of bumps 214 by performing a bumping process. Next, the CMOS image sensor 260 is electrically connected to the printed circuit board 210 through the bumps 214 therebetween. Therefore, an electrical signal, which represents image information received by the sensing devices 220, is transmitted to a printed circuit board 210 through the metal layers, the bonding pads 204 c and the bumps 214 in the interconnection layer 204 b.
  • In accordance with another embodiment of the present invention, before forming the bumps 214, a re-distribution layer 216 is formed over the image sensing device layer 204 to re-distribute the position of the bumps 214, and thereby the position of the bonding pads 204 c is optimized to prevent stress. The bumps 214 are formed over the nodes of the re-distribution layer 216 and are electrically connected to the bonding pads 204 c through the conductive layers (not shown in figure) within the re-distribution layer 216.
  • As mentioned above, the optical performance of the image sensor, which is fabricated using the process described in the present invention, is enhanced because degradation of the incident light is reduced. The image sensor of the present invention, such as a CMOS image sensor, is described in detail with reference to the accompanying drawings.
  • Referring to FIG. 2F, the CMOS image sensor 260 comprises an image sensing device layer 204, a silicon-on-insulating layer 202, an optical device array 230 and a second substrate 206 b. The silicon-on-insulating layer 202 has a first surface 202 a and a second surface 202 b. The image sensing device layer 204 is disposed over the first surface 202 a of the silicon-on-insulating layer 202. The image sensing device layer 204 comprises an active layer 204 a, an interconnection layer 204 b and bonding pads 204 c. The bonding pads 204 c are electrically connected to the interconnection layer 204 b. In accordance with an embodiment of the present invention the sensing device 220 of the CMOS image sensor 260 is a photo diode formed in the active layer 204 a.
  • The optical device array 230 is disposed over the second surface 202 b of the silicon-on-insulating layer 202. The optical device array 230 comprises a plurality of color filters arranged in an area array and a plurality of condensers. Each color filter 232 is disposed over one of the sensing devices 220 within the active layer 204 a, and each condenser 234 is disposed over one of the color filters 232, respectively. The condensers 234 focus the incident light coming from the outside environment on color filters 232. After the incident light passes through the color filters 232, it is received by the sensing devices 220 present in the active layer 204 c, which is under the color filters 232. Furthermore, a second substrate 206 b is disposed over the optical device array 230 and is held above the optical device array 230 by the spacer 250. The spacer 250 is disposed over the second surface 202 b of the SOI layer 202.
  • Furthermore, in accordance with one embodiment of the present invention the CMOS image sensor is electrically connected to the printed circuit board 210 through the re-distribution layer 216 disposed over the image sensing device layer and the bumps 214, as illustrated in FIG. 2F.
  • In accordance with one embodiment of the present invention, sensing devices in an image sensing device layer directly receive the light passing through a SOI layer, which has a small thickness. Next, an electrical signal, which represents image information received by the sensing devices, is output to a printed circuit board through bonding pads and bumps. Therefore, the degradation of the light resulting from absorption or reflection by an inter-dielectric layer and a metal layer of an interconnection layer occurring in a conventional image sensor, does not occur in the CMOS image sensor of the present invention. Thereby the sensitivity of the sensing devices of the CMOS image sensor of the present invention is improved significantly. Furthermore, the complexity of the process of fabricating the CMOS image sensor device is lowered as layout of conductive layers can be distributed over the entire area of the image sensing device layer.
  • In addition, since in accordance with the present invention, the substrate of the CMOS image sensor is fabricated using SOI technology, the total thickness of the CMOS image sensor is smaller than (about 1.6%) that of prior art CMOS image sensors. In the prior art CMOS image sensors, a substrate with a total thickness of 700 micrometers is usually utilized, whereas the CMOS image sensor of the present invention, utilizes a substrate with a total thickness of 11 micrometers. Also, the process for fabricating the CMOS image sensor of the present invention is compatible with the conventional process, and no investment for new equipment or establishment is required to be made.
  • The process used for fabricating the CMOS image sensor in accordance with the present invention also improves the yield of the CMOS image sensor.
  • It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention, provided they fall within the scope of the following claims and their equivalents.

Claims (22)

1. A method of fabricating an image device, comprising the steps of:
forming a silicon-on-insulating layer over a substrate, the silicon-on-insulating layer having a first surface and a second surface in contact with the substrate;
forming an image sensing device layer over the first surface of the silicon-on-insulating layer;
disposing a first substrate over the image sensing device layer;
lifting off the first substrate, the image sensing device layer and the silicon-on-insulating layer from the substrate so as to expose the second surface of the silicon-on-insulating layer; and
forming an optical device array over the second surface of the silicon-on-insulating layer.
2. The method of claim 1, further comprising a step of disposing a second substrate over the optical device array.
3. The method of claim 1, further comprising a step of forming a spacer over the second surface of the silicon-on-insulating layer and a step of disposing a second substrate over the spacer after the step of forming the silicon-on-insulating layer over the substrate.
4. The method of claim 1, further comprising a step of removing the first substrate in order to expose the image sensing device layer after the step of forming the optical device array.
5. The method of claim 4, further comprising a step of electrically connecting the image sensing device layer to a printed circuit board after the step of removing the first substrate.
6. The method of claim 5, wherein the step of electrically connecting the image sensing device layer to the printed circuit board comprises the steps of:
forming a re-distribution layer over the image sensing device layer; and
electrically connecting the re-distribution layer to the printed circuit board.
7. The method of claim 6, wherein the step of electrically connecting the re-distribution layer to the printed circuit board comprises the steps of:
performing a bumping process to form a plurality of bumps over the re-distribution layer, wherein each bump is electrically connected to the re-distribution layer, respectively; and
electrically connecting the bumps to the printed circuit board.
8. The method of claim 1, wherein a material of the first substrate and the second substrate comprises glass.
9. The method of claim 1, wherein the step of forming the optical device array over the second surface of the silicon-on-insulating layer comprises the steps of:
forming a plurality of color filters over the second surface of the silicon-on-insulating layer; and
forming a plurality of condenser, wherein each condenser is disposed over one of the color filters.
10. The method of claim 9, wherein the condensers comprise a plurality of micro-lenses.
11. The method of claim 1, wherein the step of forming the image sensing device layer comprises the steps of:
forming an active layer over the first surface of the silicon-on-insulating layer, wherein the active layer comprises at least one sensing device therein;
forming an interconnection layer over the active layer, wherein the interconnection layer is electrically connected to the sensing device; and
forming a plurality of bonding pads over the interconnection layer, wherein each bonding pad is electrically connected to the interconnection layer.
12. The method of claim 11, wherein the sensing device comprises at least one photo diode.
13. The method of claim 1, further comprising a cutting process for forming a plurality of image sensor units after the step of forming the optical device array.
14. An image sensor, comprising:
a silicon-on-insulating layer, having a first surface and a second surface;
an image sensing device layer, disposed over the first surface of the silicon-on-insulating layer;
an optical device array, disposed over the second surface of the silicon-on-insulating layer; and
a substrate, disposed above the second surface of the silicon-on-insulating layer, wherein the optical device array is located between the substrate and the silicon-on-insulating layer.
15. The image sensor of claim 14, wherein the image sensing device layer comprises:
an active layer, disposed over the first surface of the silicon-on-insulating layer;
an interconnection layer, disposed over the active layer; and
a plurality of bonding pads, disposed over the interconnection layer, wherein each bonding pad is electrically connected to the interconnection layer.
16. The image sensor of claim 15, wherein the active layer of the image sensing device layer comprises at least one sensing device.
17. The image sensor of claim 16, wherein the sensing device comprises at least one photo diode.
18. The image sensor of claim 14, wherein the optical device array comprises:
a plurality of color filters; and
a plurality of condensers, wherein each condenser is disposed over one of the color filters, respectively.
19. The image sensor of claim 18, wherein the condensers comprise a plurality of micro-lenses.
20. The image sensor of claim 14, further comprising a spacer disposed between the second surface of the silicon-on-insulating layer and the substrate in order to hold the substrate above the optical device array.
21. The image sensor of claim 14, further comprising a re-distribution layer disposed above the first surface of the silicon-on-insulating layer, wherein the re-distribution layer is disposed on the image sensing device layer and is electrically connected to the bonding pads.
22. The image sensor of claim 21, further comprising a plurality of bumps disposed over the re-distribution layer, wherein each bump is electrically connected to the re-distribution layer.
US10/711,377 2004-09-15 2004-09-15 Image sensor and fabricating method thereof Active 2024-10-16 US7060592B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/711,377 US7060592B2 (en) 2004-09-15 2004-09-15 Image sensor and fabricating method thereof
US11/308,330 US20060180860A1 (en) 2004-09-15 2006-03-16 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/711,377 US7060592B2 (en) 2004-09-15 2004-09-15 Image sensor and fabricating method thereof

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/308,330 Division US20060180860A1 (en) 2004-09-15 2006-03-16 Image sensor

Publications (2)

Publication Number Publication Date
US20060057764A1 true US20060057764A1 (en) 2006-03-16
US7060592B2 US7060592B2 (en) 2006-06-13

Family

ID=36034569

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/711,377 Active 2024-10-16 US7060592B2 (en) 2004-09-15 2004-09-15 Image sensor and fabricating method thereof
US11/308,330 Abandoned US20060180860A1 (en) 2004-09-15 2006-03-16 Image sensor

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11/308,330 Abandoned US20060180860A1 (en) 2004-09-15 2006-03-16 Image sensor

Country Status (1)

Country Link
US (2) US7060592B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060068586A1 (en) * 2004-09-17 2006-03-30 Bedabrata Pain Method for implementation of back-illuminated CMOS or CCD imagers
US20080099804A1 (en) * 2006-10-26 2008-05-01 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7166878B2 (en) * 2003-11-04 2007-01-23 Sarnoff Corporation Image sensor with deep well region and method of fabricating the image sensor
TW201101476A (en) * 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
KR100653848B1 (en) * 2005-09-13 2006-12-05 (주)한비젼 Three dimensional multi-layer image sensor and it's fabrication method
KR100809277B1 (en) * 2006-07-05 2008-03-03 삼성전기주식회사 Camer module having a array lens
KR100825808B1 (en) * 2007-02-26 2008-04-29 삼성전자주식회사 Image sensor having backside illumination structure and method of the same image sensor
US8003425B2 (en) * 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
FR2935537B1 (en) * 2008-08-28 2010-10-22 Soitec Silicon On Insulator MOLECULAR ADHESION INITIATION METHOD
KR101550433B1 (en) * 2009-01-30 2015-09-07 삼성전자주식회사 Method for fabricating semiconductor device
FR2943177B1 (en) 2009-03-12 2011-05-06 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE WITH CIRCUIT LAYER REPORT
FR2947380B1 (en) 2009-06-26 2012-12-14 Soitec Silicon Insulator Technologies METHOD OF COLLAGE BY MOLECULAR ADHESION.
JP5665599B2 (en) * 2011-02-24 2015-02-04 株式会社東芝 Semiconductor device and manufacturing method of semiconductor device
US10164141B2 (en) * 2014-07-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device with damage reduction

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142925A (en) * 1978-04-13 1979-03-06 The United States Of America As Represented By The Secretary Of The Army Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching
US5028558A (en) * 1988-04-13 1991-07-02 U.S. Philips Corporation Method of manufacturing a silicon on insulator semiconductor
US5536361A (en) * 1992-01-31 1996-07-16 Canon Kabushiki Kaisha Process for preparing semiconductor substrate by bonding to a metallic surface
US6498073B2 (en) * 2001-01-02 2002-12-24 Honeywell International Inc. Back illuminated imager with enhanced UV to near IR sensitivity
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US6607968B1 (en) * 1999-06-14 2003-08-19 France Telecom Method for making a silicon substrate comprising a buried thin silicon oxide film
US20040014240A1 (en) * 2000-07-06 2004-01-22 Keigo Takeguchi Molecule detecting sensor
US20040067621A1 (en) * 2000-07-31 2004-04-08 Canon Kabushiki Kaisha Method and apparatus for processing composite member
US20040262635A1 (en) * 2003-06-24 2004-12-30 Sang-Yun Lee Three-dimensional integrated circuit structure and method of making same
US20050074954A1 (en) * 2002-10-11 2005-04-07 Hideo Yamanaka Method and apparatus for producing ultra-thin semiconductor chip and method and apparatus for producing ultra-thin back-illuminated solid-state image pickup device
US20050110159A1 (en) * 2003-11-21 2005-05-26 Chang-Woo Oh Stacked integrated circuit device including multiple substrates and method of manufacturing the same
US20050205930A1 (en) * 2004-03-16 2005-09-22 Voxtel, Inc. Silicon-on-insulator active pixel sensors
US20060006488A1 (en) * 2004-06-30 2006-01-12 Sony Corporation Solid-state imaging device, camera and method of producing the solid-state imaging device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050045927A1 (en) * 2003-09-03 2005-03-03 Jin Li Microlenses for imaging devices

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142925A (en) * 1978-04-13 1979-03-06 The United States Of America As Represented By The Secretary Of The Army Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching
US5028558A (en) * 1988-04-13 1991-07-02 U.S. Philips Corporation Method of manufacturing a silicon on insulator semiconductor
US5536361A (en) * 1992-01-31 1996-07-16 Canon Kabushiki Kaisha Process for preparing semiconductor substrate by bonding to a metallic surface
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US6607968B1 (en) * 1999-06-14 2003-08-19 France Telecom Method for making a silicon substrate comprising a buried thin silicon oxide film
US20040014240A1 (en) * 2000-07-06 2004-01-22 Keigo Takeguchi Molecule detecting sensor
US20040067621A1 (en) * 2000-07-31 2004-04-08 Canon Kabushiki Kaisha Method and apparatus for processing composite member
US6498073B2 (en) * 2001-01-02 2002-12-24 Honeywell International Inc. Back illuminated imager with enhanced UV to near IR sensitivity
US20050074954A1 (en) * 2002-10-11 2005-04-07 Hideo Yamanaka Method and apparatus for producing ultra-thin semiconductor chip and method and apparatus for producing ultra-thin back-illuminated solid-state image pickup device
US20040262635A1 (en) * 2003-06-24 2004-12-30 Sang-Yun Lee Three-dimensional integrated circuit structure and method of making same
US20050110159A1 (en) * 2003-11-21 2005-05-26 Chang-Woo Oh Stacked integrated circuit device including multiple substrates and method of manufacturing the same
US20050205930A1 (en) * 2004-03-16 2005-09-22 Voxtel, Inc. Silicon-on-insulator active pixel sensors
US20060006488A1 (en) * 2004-06-30 2006-01-12 Sony Corporation Solid-state imaging device, camera and method of producing the solid-state imaging device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060068586A1 (en) * 2004-09-17 2006-03-30 Bedabrata Pain Method for implementation of back-illuminated CMOS or CCD imagers
US7425460B2 (en) * 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
US20080099804A1 (en) * 2006-10-26 2008-05-01 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
US7888159B2 (en) 2006-10-26 2011-02-15 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
US20110140221A1 (en) * 2006-10-26 2011-06-16 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
EP1916714B1 (en) * 2006-10-26 2012-07-25 OmniVision Technologies Inc. Method for fabricating an image sensor having curved micro-mirrors over the sensing photodiode
US8338900B2 (en) 2006-10-26 2012-12-25 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating

Also Published As

Publication number Publication date
US20060180860A1 (en) 2006-08-17
US7060592B2 (en) 2006-06-13

Similar Documents

Publication Publication Date Title
US20060180860A1 (en) Image sensor
US7791158B2 (en) CMOS image sensor including an interlayer insulating layer and method of manufacturing the same
US8405180B2 (en) Solid-state imaging device, method of making the same, and imaging apparatus
US8216873B2 (en) Back-illuminated type imaging device and fabrication method thereof
JP4383959B2 (en) Photoelectric conversion device and manufacturing method thereof
US7923798B2 (en) Optical device and method for fabricating the same, camera module using optical device, and electronic equipment mounting camera module
TWI472021B (en) A solid-state imaging device and a method for manufacturing a solid-state imaging device, an electronic device having a solid-state imaging device
US20060076580A1 (en) Image sensor with vertically integrated thin-film photodiode
CN107240593B (en) Stacked global exposure pixel unit structure and forming method thereof
US20060267121A1 (en) Microlenses for imaging devices
US8243186B2 (en) Solid-state image pickup apparatus and electronic apparatus
CN107195648B (en) Low-noise high-sensitivity global pixel unit structure and forming method thereof
CN111129053B (en) Pixel unit structure of CMOS image sensor and forming method
KR100544018B1 (en) Cmos image sensor with detecting light in backside of wafer and having enlarged photodiode
CN110943100A (en) Ultrathin imaging chip and forming method thereof, imaging module and forming method thereof
JP4503452B2 (en) Method for manufacturing solid-state imaging device
CN111627940B (en) CMOS image sensor packaging module, forming method thereof and image pickup device
JP2022107339A (en) Solid-state image sensor and electronic apparatus
JP5225233B2 (en) Photoelectric conversion device
TWI235490B (en) Image sensor and fabricating method thereof
CN217719602U (en) Image sensor structure
US20220173146A1 (en) Image sensor
US20240120357A1 (en) Image sensor
CN211320100U (en) Ultrathin imaging chip and imaging module
CN116564987A (en) Preparation method of back-illuminated CMOS image sensor

Legal Events

Date Code Title Description
AS Assignment

Owner name: UNITED MICROELECTRONICS CORP., TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:PAN, JUI-HSIANG;SUN, CHENG-KUANG;CHENG, KUANG-CHIH;AND OTHERS;REEL/FRAME:015125/0826

Effective date: 20040720

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553)

Year of fee payment: 12