US20060091389A1 - Thin film transistor array panel - Google Patents
Thin film transistor array panel Download PDFInfo
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- US20060091389A1 US20060091389A1 US11/266,680 US26668005A US2006091389A1 US 20060091389 A1 US20060091389 A1 US 20060091389A1 US 26668005 A US26668005 A US 26668005A US 2006091389 A1 US2006091389 A1 US 2006091389A1
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- thin film
- film transistor
- array panel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Definitions
- the present invention relates to a thin film transistor array panel.
- An active type display device such as a liquid crystal display (LCD) and an organic light emitting diode (OLED) display includes a plurality of pixels arranged in a matrix and including field generating electrodes and switching elements.
- the switching elements include thin film transistors (TFTs) having three terminals, gate, source, and drain. The TFT of each pixel selectively transmits data signals to a field-generating electrode in response to gate signals.
- TFTs thin film transistors
- the display device further includes a plurality of signal lines for transmitting signals to the switching elements, which includes gate lines transmitting gate signals and data lines transmitting data signals.
- the LCD and the OLED include a panel provided with TFTs, field-generating electrodes, and signal lines, which is referred to as a TFT array panel.
- the TFT array panel has a layered structure that includes several conductive layers and insulating layers. Gate lines, data lines, and field-generating electrodes are formed of different conductive layers and separated by insulating layers.
- step-and-repeat process When an active area on a backplane for LCDs is too large to use an exposure mask, the entire exposure is accomplished by repeating a divisional exposure called step-and-repeat process.
- One divisional exposure unit or area is called a shot. Since transition, rotation, and distortion are generated during light exposure, the shots are not aligned accurately. Accordingly, parasitic capacitances generated between signal lines and pixel electrodes differ depending on the shots, and this causes the luminance difference between the shots, which is recognized at the pixels located at a boundary between the shots. Therefore, the stitch defect is generated on the screen of the LCD due to luminance discontinuity between the shots. In addition, the difference in the parasitic capacitance causes the difference in the kickback voltage to yield flickering.
- a thin film transistor array panel includes: a gate electrode; a semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode connected to the semiconductor layer; and a drain electrode connected to the semiconductor layer, spaced apart from the source electrode, and including two branches overlapping the gate electrode, wherein the two branches of the drain electrode are spaced apart from each other and lie on a straight line or on two parallel straight lines.
- the gate electrode may have two opposite edges meeting the two branches, respectively, and substantially parallel to each other.
- the thin film transistor array panel may further include: a gate line coupled to the gate electrode; a data line coupled to the drain electrode; and a pixel electrode coupled to the drain electrode.
- the two branches may have a symmetry with respect to a center line passing through the gate electrode and parallel to the gate line or the data line.
- the source electrode may enclose the two branches.
- the source electrode may have a symmetry with respect to the center line passing through the gate electrode and parallel to the gate line or the data line.
- the source electrode may be spaced apart from the gate line except for the source electrode.
- the source electrode may have a shape of a character H or a shape of a character H rotated by about a right angle.
- the pixel electrode may include a lower half and an upper half that are disposed opposite each other with respect to the gate line.
- the drain electrode may have a symmetry with respect to a center line of the gate line.
- the thin film transistor array panel may further include a storage electrode line overlapping at least one of the pixel electrode and the drain electrode.
- the storage electrode may be disposed near an edge of the pixel electrode.
- the storage electrode may be disposed near an edge of the pixel electrode.
- a thin film transistor includes: a gate electrode having a first edge and a second edge disposed opposite the first edge; a semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode connected to the semiconductor layer; a drain electrode connected to the semiconductor layer, spaced apart from the source electrode, and including a first branch and a second branch, wherein the first branch meets the first edge of the gate electrode at a predetermined angle, the second branch meets the second edge of the gate electrode at the predetermined angle.
- the first edge of the gate electrode may be substantially parallel to the second edge of the gate electrode.
- a thin film transistor array panel includes: a gate line including a gate electrode; a data line intersecting the gate line and including a source electrode; a drain electrode disposed apart from the source electrode and including two branches; a semiconductor layer connected to the source electrode and the drain electrode; a passivation layer formed on the gate line, the data line, the drain electrode, and the semiconductor layer; and a pixel electrode connected to the drain electrode, wherein the source electrode includes two concave portions connected to each other and disposed opposite each other and the two concave portions enclose respective branches of the drain electrode.
- the source electrode may include a connecting portion connected between the concave portions and the data line and the connecting portion may be spaced apart from the gate line.
- FIG. 1 shows a layout view of a TFT array panel according to an embodiment of the present invention
- FIG. 2 shows a sectional view of the TFT array panel shown in FIG. 1 taken along the line II-II′;
- FIG. 3 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention
- FIG. 4 shows a sectional view of the TFT array panel shown in FIG. 3 taken along the line IV-IV′;
- FIG. 5 shows a sectional view of the TFT array panel shown in FIG. 3 taken along the line V-V′;
- FIG. 6 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention.
- FIG. 7 shows a layout view of a common electrode panel for an LCD according to an embodiment of the present invention.
- FIG. 8 shows a sectional view of an LCD including the TFT array panel shown in FIG. 6 and the common electrode panel shown in FIG. 7 ;
- FIG. 9 shows a sectional view of the LCD shown in FIG. 8 taken along the line IX-IX′;
- FIG. 10 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention.
- FIG. 11 shows a layout view of a common electrode panel for an LCD according to another embodiment of the present invention.
- FIG. 12 shows a sectional view of an LCD including the TFT array panel shown in FIG. 10 and the common electrode panel shown in FIG. 11 ;
- FIG. 13 shows a sectional view of the LCD shown in FIG. 12 taken along the line XIII-XIII′;
- FIG. 14 shows a layout view of an LCD according to another embodiment of the present invention.
- FIG. 15 shows a sectional view of the LCD shown in FIG. 12 taken along the line XV-XV′;
- FIG. 16 shows a layout view of an LCD according to another embodiment of the present invention.
- a TFT array panel according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2 .
- FIG. 1 shows a layout view of a TFT array panel according to an embodiment of the present invention
- FIG. 2 shows a sectional view of the TFT array panel shown in FIG. 1 taken along the line II-II′.
- a plurality of gate lines 121 is formed on an insulating substrate 110 such as transparent glass or plastic.
- the gate lines 121 transmit gate signals and extend substantially in a transverse direction.
- Each of the gate lines 121 includes a plurality of gate electrodes 124 projecting upwardly, a plurality of gate line projections 127 projecting downwardly, and a gate line end portion 129 having a large area for contact with another layer (not shown) or an external driving circuit (not shown).
- a gate driving circuit (not shown) for generating gate signals may be mounted on a flexible printed circuit (FPC) film (not shown), which may be attached to the insulating substrate 110 , directly mounted on the insulating substrate 110 , or integrated onto the insulating substrate 110 .
- the gate lines 121 may extend to be connected to a driving circuit (not shown) that may be integrated on the insulating substrate 110 .
- the gate lines 121 are preferably made of Al containing metal such as Al and Al alloy, Ag containing metal such as Ag and Ag alloy, Cu containing metal such as Cu and Cu alloy, Mo containing metal such as Mo and Mo alloy, Cr, Ta, or Ti. However, they may have a multi-layered structure including two conductive films (not shown) having different physical characteristics. One of the two films is preferably made of low resistivity metal including Al containing metal, Ag containing metal, and Cu containing metal for reducing signal delay or voltage drop. The other film is preferably made of material such as Mo containing metal, Cr, Ta, or Ti, which has good physical, chemical, and electrical contact characteristics with other materials such as indium tin oxide (ITO) or indium zinc oxide (IZO).
- ITO indium tin oxide
- IZO indium zinc oxide
- the gate lines 121 may be made of other metals or conductors.
- Lateral sides of the gate lines 121 are inclined relative to a surface of the insulating substrate 110 , and the inclination angle thereof ranges about 30-80 degrees.
- a plurality of first and second semiconductor islands 151 and 154 preferably made of hydrogenated amorphous silicon (abbreviated to “A-Si”) or polysilicon is formed on the gate insulating layer 140 .
- the second semiconductor islands 154 are disposed on the gate electrodes 124 such that edges of the second semiconductor islands 154 are disposed on the gate electrodes 124 to block a light emitted from a backlight lamp from being incident onto the second semiconductor islands 154 , thereby reducing a photocurrent.
- the first semiconductor islands 151 are disposed on the gate lines 121 and cover lower and upper edges of the gate lines 121 .
- a plurality of second and third ohmic contact islands 163 and 165 are formed on the second semiconductor islands 154 .
- a plurality of first ohmic contacts 161 are also formed on the first semiconductor islands 151 .
- the first, second and third ohmic contacts 161 , 163 and 165 are preferably made of n+hydrogenated A-Si heavily doped with n type impurity such as phosphorous or they may be made of silicide.
- the lateral sides of the first and second semiconductor islands 151 and 154 and the first, second and third ohmic contacts 161 , 163 and 165 are inclined relative to the surface of the insulating substrate 110 , and the inclination angles thereof are preferably in a range of about 30-80 degrees.
- a plurality of data lines 171 , a plurality of drain electrodes 175 , and a plurality of storage capacitor conductors 177 are formed on the first, second and third ohmic contacts 161 , 163 and 165 and the gate insulating layer 140 .
- the data lines 171 transmit data signals and extend substantially in a longitudinal direction to intersect the gate lines 121 .
- Each data line 171 includes a plurality of source electrodes 173 projecting toward the gate electrodes 124 and having a bilateral symmetry on the gate electrodes 124 .
- Each of the source electrodes 173 includes a longitudinal portion and two pairs of transverse portions extending from both ends of the longitudinal portion in left and right directions having a shape like a character “H” rotated about 90 degrees.
- Each of the data lines 171 further includes a data line end portion 179 having a large area for contact with another layer (not shown) or an external driving circuit (not shown).
- a data driving circuit (not shown) for generating the data signals may be mounted on a FPC film (not shown), which may be attached to the insulating substrate 110 , directly mounted on the insulating substrate 110 , or integrated onto the insulating substrate 110 .
- the data lines 171 may extend to be connected to a driving circuit (not shown) that may be integrated on the insulating substrate 110 .
- the drain electrodes 175 are separated from the data lines 171 and disposed opposite the source electrodes 173 with respect to the gate electrodes 124 .
- Each of the drain electrodes 175 includes a wide portion and two branches.
- the two branches lie on a straight line or on two parallel straight lines and are spaced apart from each other.
- the branches form a hook portion having a bilateral symmetry.
- the hook portion has a shape like a character “C” and is disposed partly enclosing a gate electrode 124 , and end portions of the hook portion pass through opposite longitudinal edges to reach inner portions of the gate electrode 124 . Both ends of the hook portion are disposed on a gate electrode 124 and partly enclosed by a source electrode 173 .
- the symmetrical arrangement of the drain electrodes 175 with respect to the gate electrodes 124 causes a uniform overlapping area between the drain electrodes 175 and the gate electrodes 124 regardless of deformation of masks such as transition, rotation, and twist.
- masks for forming the gate electrodes 124 and the drain electrodes 175 are shifted, rotated, or twisted to misalign the gate electrodes 124 and the drain electrodes 175 in a transverse direction such that one of left and right overlapping areas between the gate electrodes 124 and the drain electrodes 175 is decreased, the other of the left and right overlapping areas is increased to compensate from the decrease of the one overlapping area.
- the parasitic capacitances between the gate electrodes 124 and the drain electrodes 175 can be maintained uniformly to reduce the flickering of the image.
- the longitudinal misalignment between the gate electrodes 124 and the drain electrodes 175 does not affect the overlapping area between the gate electrodes 124 and the drain electrodes 175 .
- the storage capacitor conductors 177 overlap the gate line projections 127 .
- a gate electrode 124 , a source electrode 173 , and a drain electrode 175 along with a projection of a second semiconductor island 154 form a TFT having a channel formed in the second semiconductor island 154 disposed between the source electrode 173 and the drain electrode 175 .
- the data lines 171 , the drain electrodes 175 , and the storage capacitor conductors 177 are preferably made of a refractory metal such as Cr, Mo, Ta, Ti, or alloys thereof. However, they may have a multilayered structure including a refractory metal film (not shown) and a low resistivity film (not shown). Examples of the multi-layered structure are a double-layered structure including a lower Cr/Mo (alloy) film and an upper Al (alloy) film and a triple-layered structure of a lower Mo (alloy) film, an intermediate Al (alloy) film, and an upper Mo (alloy) film.
- the data lines 171 , the drain electrodes 175 , and the storage capacitor conductors 177 may be made of other metals or conductors.
- the data lines 171 , the drain electrodes 175 , and the storage capacitor conductors 177 have inclined edge profiles, and the inclination angles thereof range about 30-80 degrees.
- the first, second and third ohmic contacts 161 , 163 and 165 are interposed only between the underlying first and second semiconductor islands 151 and 154 and the overlying data lines 171 and drain electrodes 175 thereon and reduce the contact resistance therebetween.
- the first semiconductor islands 151 smooth the profile of the surface, thereby preventing the disconnection of the data lines 171 .
- the first and second semiconductor islands 151 and 154 include some exposed portions, which are not covered with the data lines 171 , the drain electrodes 175 , or the storage capacitor conductors 177 , such as portions located between the source electrodes 173 and the drain electrodes 175 .
- a passivation layer 180 is formed on the data lines 171 , the drain electrodes 175 , the storage capacitor electrodes 177 , and the exposed portions of the first and second semiconductor islands 151 and 154 .
- the passivation layer 180 is preferably made of an inorganic or organic insulator and it may have a flat top surface. Examples of the inorganic insulator include silicon nitride and silicon oxide. The organic insulator may have photosensitivity and a dielectric constant of less than about 4.0.
- the passivation layer 180 may include a lower film of an inorganic insulator and an upper film of an organic insulator such that it takes the excellent insulating characteristics of the organic insulator while preventing the exposed portions of the first and second semiconductor islands 151 and 154 from being damaged by the organic insulator.
- the passivation layer 180 has a plurality of second, third and fourth contact holes 182 , 185 and 187 exposing the data line end portions 179 , the drain electrodes 175 , and the gate line projections 127 , respectively.
- the passivation layer 180 and the gate insulating layer 140 have a plurality of first contact holes 181 exposing the gate line end portions 129 .
- a plurality of pixel electrodes 190 and a plurality of first and second contact assistants 81 and 82 are formed on the passivation layer 180 . They are preferably made of transparent conductor such as ITO or IZO or reflective conductor such as Ag, Al, Cr, or alloys thereof.
- the pixel electrodes 190 are physically and electrically connected to the drain electrodes 175 through the third contact holes 185 such that the pixel electrodes 190 receive data voltages from the drain electrodes 175 .
- the pixel 10 electrodes 190 supplied with the data voltages generate electric fields in cooperation with a common electrode (not shown) of an opposing display panel (not shown) supplied with a common voltage, which determine the orientations of liquid crystal (LC) molecules (not shown) of an LC layer (not shown) disposed between the pixel electrodes 190 and the common electrode.
- a pixel electrode 190 and the common electrode form a capacitor referred to as a “liquid crystal capacitor,” which stores applied voltages after the TFT turns off.
- the pixel electrodes 190 are connected to the storage capacitor conductors 177 overlapping the gate line projections 127 .
- a pixel electrode 190 and a storage capacitor conductor 177 connected thereto and a gate line projection 127 form an additional capacitor referred to as a “storage capacitor,” which enhances the voltage storing capacity of the liquid crystal capacitor.
- a TFT array panel for an LCD according to another embodiment of the present invention will be described in detail with reference to FIGS. 3, 4 and 5 .
- FIG. 3 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention
- FIG. 4 shows a sectional view of the TFT array panel shown in FIG. 3 taken along the line IV-IV′
- FIG. 5 shows a sectional view of the TFT array panel shown in FIG. 3 taken along the line V-V′.
- the layered structure of the TFT array panel according to this embodiment is similar to those shown in FIGS. 1 and 2 .
- a plurality of gate lines 121 including gate electrodes 124 are formed on an insulating substrate 110 , and a gate insulating layer 140 , a plurality of semiconductor stripes 152 including a plurality of semiconductor stripe projections 153 , and a plurality of ohmic contacts 161 including ohmic contact projections 163 and a plurality of ohmic contact islands 165 are sequentially formed thereon.
- a plurality of data lines 171 including source electrodes 173 , a plurality of drain electrodes 175 , and a plurality of storage capacitor conductors 177 are formed on the ohmic contact stripes and islands 161 and 165 , and a passivation layer 180 is formed thereon.
- a plurality of first, second, third and fourth contact holes 181 , 182 , 185 and 187 are provided at the passivation layer 180 and the gate insulating layer 140 .
- a plurality of pixel electrodes 190 and a plurality of first and second contact assistants 81 and 82 are formed on the passivation layer 180 .
- the source electrodes 173 are spaced apart from the gate lines 121 .
- the TFT array panel provides a plurality of storage electrode lines 131 , which are separated from the gate lines 121 , on the same layer as the gate lines 121 without gate line projections.
- the storage electrode lines 131 are supplied with a predetermined voltage such as the common voltage and extend substantially parallel to the gate lines 121 .
- Each of the storage electrode lines 131 is disposed between two adjacent gate lines 121 and it is nearly equidistant from the two adjacent gate lines 121 .
- the storage electrode lines 131 overlap the storage capacitor conductors 177 to form storage capacitors.
- the storage electrode lines 131 may have various shapes and arrangements.
- the storage electrode lines 131 may be omitted if the storage capacitance generated by the overlap of the gate lines 121 and the pixel electrodes 190 is sufficient.
- the storage electrode lines 131 may be disposed near the gate lines 121 to increase the aperture ratio.
- the semiconductor stripes 152 of the TFT array panel 100 have similar planar shapes as the data lines 171 and the drain electrodes 175 as well as the underlying ohmic contact stripes and islands 161 and 165 .
- the semiconductor stripe projections 153 include some exposed portions, which are not covered with the data lines 171 or the drain electrodes 175 , such as portions located between the source electrodes 173 and the drain electrodes 175 .
- the TFT array panel 100 further includes a plurality of fifth semiconductor islands 157 and a plurality of fifth ohmic contact islands 167 disposed under the storage capacitor conductors 177 .
- a manufacturing method of the TFT array panel simultaneously forms the data lines 171 , the drain electrodes 175 , the semiconductors 151 , and the ohmic contact stripes and islands 161 and 165 using one photolithography process.
- a photoresist pattern for the photolithography process has position-dependent thickness, and in particular, it has first and second portions with decreasing thickness.
- the first portions are located on wire areas that will be occupied by the data lines 171 and the drain electrodes 175 , and the second portions are located on channel areas of the TFTs.
- the position-dependent thickness of the photoresist is obtained by several techniques, for example, by providing translucent areas on the exposure mask as well as transparent areas and light blocking opaque areas.
- the translucent areas may have a slit pattern, a lattice pattern, a thin film(s) with intermediate transmittance or intermediate thickness.
- a slit pattern it is preferable that the width of the slits or the distance between the slits is smaller than the resolution of a light exposer used for the photolithography.
- Another example is to use reflowable photoresist. Once a photoresist pattern made of a reflowable material is formed by using a normal exposure mask only with transparent areas and opaque areas, it is subject to reflow process to flow onto areas without the photoresist, thereby forming thin portions.
- the manufacturing process is simplified by omitting a photolithography step.
- TFT array panel for an LCD shown in FIGS. 1 and 2 may be applicable to the TFT array panel shown in FIGS. 3-5 .
- FIG. 6 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention
- FIG. 7 shows a layout view of a common electrode panel for an LCD according to an embodiment of the present invention
- FIG. 8 shows a sectional view of an LCD including the TFT array panel shown in FIG. 6 and the common electrode panel shown in FIG. 7
- FIG. 9 shows a sectional view of the LCD shown in FIG. 8 taken along the line IX-IX′.
- an LCD also includes a TFT array panel 100 , a common electrode panel 200 , a liquid crystal (LC) layer 3 interposed between the TFT array and common electrode panels 100 and 200 , and a pair of polarizers 12 and 22 attached on outer surfaces of the TFT array and common electrode panels 100 and 200 .
- LC liquid crystal
- the layered structure of the TFT array panel 100 according to this embodiment is similar to those shown in FIGS. 1 and 2 .
- a plurality of gate lines 121 including gate electrodes 124 and gate line end portions 129 are formed on an insulating substrate 110 , and a gate insulating layer 140 , a plurality of third, fourth and second semiconductor islands 151 a, 151 b and 154 , and a plurality of ohmic contact islands 161 a, 161 b, 163 and 165 are sequentially formed thereon.
- a plurality of data lines 171 including source electrodes 173 and data line end portions 179 and a plurality of drain electrodes 175 are formed on the ohmic contact islands 161 a, 161 b, 163 and 165 and the gate insulating layer 140 , and a passivation layer 180 is formed thereon.
- a plurality of first, second and third contact holes 181 , 182 and 185 are provided at the passivation layer 180 and the gate insulating layer 140 .
- a plurality of pixel electrodes 190 and a plurality of first and second contact assistants 81 and 82 are formed on the passivation layer 180 .
- the TFT array panel provides a plurality of storage electrode lines 131 , which are separated from the gate lines 121 , on the same layer as the gate lines 121 without gate line projections.
- the storage electrode lines 131 are supplied with a predetermined voltage and each of the storage electrode lines 131 includes a stem extending substantially parallel to the gate lines 121 , a plurality of first, second, third and fourth storage electrodes 133 a, 133 b, 133 c and 133 d branched from the stem, and a plurality of storage connections 133 e.
- Each of the storage electrode lines 131 is disposed between two adjacent gate lines 121 and the stem is close to an upper one of the two adjacent gate lines 121 .
- the first and the second storage electrodes 133 a and 133 b extend in a longitudinal direction and face each other.
- the first storage electrodes 133 a have a fixed end portion connected to the stem and a free end portion disposed opposite the fixed end portion and having a projection.
- the third and the four storage electrodes 133 c and 133 d obliquely extend approximately from a center of the first storage electrodes 133 a and upper and lower ends of the second storage electrodes 133 b, respectively.
- Each of the storage connections 133 e is connected between adjacent first through fourth storage electrodes 133 a - 133 d.
- the storage electrode lines 131 may have various shapes and arrangements.
- a pixel electrode 190 overlaps a storage electrode line 131 including first through fourth storage electrodes 133 a - 133 d.
- Each pixel electrode 190 is shaped approximately like a rectangle that having lower and upper transverse main edges nearly parallel to the gate lines 121 , left and right longitudinal main edges nearly parallel to the data lines 171 and chamfered corners. The chamfered corners of the pixel electrode 190 make an angle of about 45 degrees with the gate lines 121 .
- the left and right longitudinal main edges of the pixel electrode 190 are disposed closer to a data line 171 than the first and second storage electrodes 133 a and 133 b.
- the pixel electrode 190 with a drain electrode 175 connected thereto, and the storage electrode line 131 including the first through fourth storage electrodes 133 a - 133 d form a storage capacitor.
- the source electrodes 173 are spaced apart from the gate lines 121 and the ohmic contacts 161 b are disposed between edges of the gate electrodes 124 and the source electrodes 173 .
- the third semiconductor islands 151 a and the ohmic contacts 161 a are disposed between the gate lines 121 and the data lines 171 .
- a plurality of isolated metal pieces 178 are formed on the gate insulating layer 140 , the passivation layer 180 and the gate insulating layer 140 that has a plurality of fixed end contact holes 183 a exposing portions of the storage electrode lines 131 near fixed end portions of the first storage electrodes 133 a, and a plurality of free end contact holes 183 b exposing free end portions of the first storage electrodes 133 a, and a plurality of overpasses 83 are formed on the passivation layer 180 .
- the isolated metal pieces 178 disposed on the gate lines 121 near the first storage electrodes 133 a, and the overpasses 83 are disposed on the isolated metal pieces 178 .
- the overpasses 83 cross over the gate lines 121 and are connected to exposed portions of the storage electrode lines 131 and exposed free end portions of the first storage electrodes 133 a through the fixed end and free end contact holes 183 a and 183 b, respectively, which are disposed opposite each other with respect to the gate lines 121 .
- the storage electrode lines 131 along with the overpasses 83 can be used for repairing defects in the gate lines 121 , the data lines 171 , or TFTs.
- Each pixel electrode 190 has a first center cutout 91 , a first lower cutout 93 a, and a first upper cutout 93 b, which partition the pixel electrode 190 into a plurality of partitions.
- the first center, first lower and first upper pixel electrode cutouts 91 , 93 a and 93 b substantially have an inversion symmetry with respect to an imaginary transverse line bisecting the pixel electrode 190 .
- the first lower and first upper pixel electrode cutouts 93 a and 93 b obliquely extend from the right longitudinal main edge of the pixel electrode 190 near right angles approximately to a center of the left longitudinal main edge of the pixel electrode 190 and overlap the third and the fourth storage electrodes 133 c and 133 d, respectively.
- the first lower and first upper pixel electrode cutouts 93 a and 93 b are disposed at lower and upper halves of the pixel electrode 190 , respectively, which can be divided by the imaginary transverse line.
- the first lower and first upper pixel electrode cutouts 93 a and 93 b make an angle of about 45 degrees to the gate lines 121 , and extend substantially perpendicularly to each other.
- the first center pixel electrode cutout 91 extends along the imaginary transverse line and has an inlet from the right main edge of the pixel electrode 190 , which has a pair of inclined edges substantially parallel to the first lower cutout 93 a and the first upper cutout 93 b, respectively.
- the lower half of the pixel electrode 190 is partitioned into two lower partitions by the first lower pixel electrode cutout 93 a and the upper half of the pixel electrode 190 is also partitioned into two upper partitions by the first upper pixel electrode cutout 93 b.
- the number of partitions or the number of pixel electrode cutouts varies depending on the design factors such as the size of the pixels, the ratio of the transverse main edges to the longitudinal main edges of the pixel electrode 190 , and the type and characteristics of the LC layer 3 .
- a light blocking member 220 referred to as a black matrix for preventing light leakage is formed on an insulating substrate 210 such as transparent glass or plastic.
- the light blocking member 220 has a plurality of openings 225 that face the pixel electrodes 190 and it may have a substantially similar planar shape to the pixel electrodes 190 . Otherwise, the light blocking member 220 may include a plurality of rectilinear portions facing the data lines 171 on the TFT array panel 100 and a plurality of widened portions facing the TFTs on the TFT array panel 100 .
- a plurality of color filters 230 is formed on the insulating substrate 210 and is disposed substantially in the area enclosed by the light blocking member 220 .
- the color filters 230 may extend substantially in a longitudinal direction along the pixel electrodes 190 .
- the color filters 230 may represent one of the primary colors such as red, green or blue.
- An overcoat 250 is formed on the color filters 230 and the light blocking member 220 .
- the overcoat 250 is preferably made of an organic insulator. It prevents the color filters 230 from being exposed and provides a flat surface.
- the overcoat 250 may be omitted.
- a common electrode 270 is formed on the overcoat 250 .
- the common electrode 270 is preferably made of transparent conductive material such as ITO and IZO.
- the common electrode 270 faces a pixel electrode 190 and includes a first center cutout 71 , a first lower cutout 73 a, and a first upper cutout 73 b.
- Each of the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b is disposed between adjacent first center, first lower and first upper pixel electrode cutouts 91 , 93 a and 93 b or between a first lower or first upper pixel electrode cutout 93 a or 93 b and a chamfered corner of the pixel electrode 190 .
- Each of the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b has at least an oblique portion extending substantially parallel to the first lower pixel electrode cutout 93 a or the first upper pixel electrode cutout 93 b.
- the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b have substantially an inversion symmetry with respect to the above-described imaginary transverse line bisecting the pixel electrode 190 .
- Each of the first lower and first upper common electrode cutouts 73 a and 73 b includes an oblique portion, a transverse portion, and a longitudinal portion.
- the oblique portion extends approximately from the left longitudinal main edge of the pixel electrode 190 approximately to the lower or upper transverse main edge of the pixel electrode 190 .
- Each of the transverse and longitudinal portions extend from a respective end of the oblique portion along an edge of the pixel electrode 190 , overlapping the edge of the pixel electrode 190 , and making an obtuse angle with the oblique portion.
- the first center common electrode cutout 71 includes a central transverse portion, a pair of oblique portions, and a pair of terminal longitudinal portions.
- the central transverse portion extends approximately from the left longitudinal main edge of the pixel electrode 190 along the above-described transverse line.
- the oblique portions extend from an end of the central transverse portion approximately to the right longitudinal main edge of the pixel electrode 190 and make oblique angles with the central transverse portion.
- the terminal longitudinal portions extend from the ends of the respective oblique portions along the right longitudinal main edge of the pixel electrode 190 , overlapping the right longitudinal main edge of the pixel electrode 190 , and making obtuse angles with the respective oblique portions.
- the number of the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b may vary depending on the design factors, and the light blocking member 220 may also overlap the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b to block the light leakage through the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b.
- First and second alignment layers 11 and 21 that may be homeotropic are coated on inner surfaces of the TFT array and common electrode panels 100 and 200 .
- the pair of polarizers 12 and 22 are provided on outer surfaces of the TFT array and common electrode panels 100 and 200 so that their polarization axes may be crossed and one of the polarization axes may be parallel to the gate lines 121 .
- the angle between the polarization axes and the cutouts 71 - 72 b and 91 - 92 b is about 45 degrees, the efficiency of the light is very high.
- the polarization axes is substantially parallel to edges of the TFT array and common electrode panels 100 and 200 , i.e., parallel to the gate lines 121 and the data lines 171 , the cost for the pair of polarizers 12 and 22 is small.
- One of the pair of polarizers 12 and 22 may be omitted when the LCD is a reflective LCD.
- the LCD may further include at least one retardation film (not shown) for compensating the retardation of the LC layer 3 .
- the LCD may further include a backlight unit (not shown) supplying light to the LC layer 3 through the pair of polarizers 12 and 22 , the retardation film, and the TFT array and common electrode panels 100 and 200 .
- the LC layer 3 has negative dielectric anisotropy and it is subjected to a vertical alignment that LC molecules 31 in the LC layer 3 are aligned such that their long axes are substantially vertical to the surfaces of the TFT array and common electrode panels 100 and 200 in the absence of an electric field. Accordingly, incident light cannot pass the crossed polarization system composed of the pair of polarizers 12 and 22 .
- an electric field substantially perpendicular to the surfaces of the TFT array and common electrode panels 100 and 200 is generated.
- Both the pixel electrode 191 and the common electrode 270 are commonly referred to as “field generating electrodes.”
- the LC molecules 31 tend to change their orientations in response to the electric field such that their long axes are perpendicular to the field direction.
- the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b and the first center, first lower and first upper pixel electrode cutouts 91 , 93 a and 93 b divides a pixel electrode 190 into a plurality of sub-areas and each sub-area has two primary edges making oblique angles with the main edges of the pixel electrode 190 . Since most LC molecules 31 on each sub-area tilt perpendicular to the primary edges, the azimuthal distribution of the tilt directions are localized to four directions, thereby increasing the reference viewing angle of the LCD.
- the width of the sub-area is preferably from about 12 microns to about 20 microns, and more preferably from about 17 microns to about 19 microns.
- the width of the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b and the first center, first lower and first upper pixel electrode cutouts 91 , 93 a and 93 b is preferably equal to from about 9 microns to about 12 microns, and the shapes and the arrangements of the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b and the first center, first lower and first upper pixel electrode cutouts 91 , 93 a and 93 b may be modified.
- At least one of the first center, first lower and first upper common electrode cutouts 71 , 73 a and 73 b and the first center, first lower and first upper pixel electrode cutouts 91 , 93 a and 93 b can be substituted with protrusions (not shown) or depressions (not shown) preferably having a width of from about 5 microns to about 10 microns.
- the protrusions are preferably made of organic or inorganic material and disposed on or under the pixel electrode 190 or the common electrode 270 .
- TFT array panel for an LCD shown in FIGS. 1 and 2 may be applicable to the TFT array panel shown in FIGS. 6-9 .
- FIG. 10 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention
- FIG. 11 shows a layout view of a common electrode panel for an LCD according to another embodiment of the present invention
- FIG. 12 shows a sectional view of an LCD including the TFT array panel shown in FIG. 10 and the common electrode panel shown in FIG. 11
- FIG. 13 shows a sectional view of the LCD shown in FIG. 12 taken along the line XIII-XIII′.
- an LCD according to this embodiment also includes a TFT array panel 100 , a common electrode panel 200 , an LC layer 3 interposed between the TFT array and common electrode panels 100 and 200 , and a pair of polarizers 12 and 22 attached on outer surfaces of the TFT array and common electrode panels 100 and 200 .
- Layered structures of the TFT array and common electrode panels 100 and 200 according to this embodiment are similar to those shown in FIGS. 6-9 .
- a plurality of gate lines 121 including gate electrodes 124 and gate line end portions 129 and a plurality of storage electrode lines 131 are formed on an insulating substrate 110 .
- a gate insulating layer 140 , a plurality of first and second semiconductor islands 151 and 154 , and a plurality of ohmic contacts 161 , 163 and 165 are formed on the gate lines 121 and the storage electrode lines 131 .
- a plurality of data lines 171 including source electrodes 173 and data line end portions 179 and a plurality of drain electrodes 175 are formed on the ohmic contacts 163 and 165 and the gate insulating layer 140 , and a passivation layer 180 is formed thereon.
- a plurality of first, second and third contact holes 181 , 182 and 185 are provided at the passivation layer 180 and the gate insulating layer 140 .
- a plurality of pixel electrodes 190 including first and second center and first through third lower and upper pixel electrode cutouts 91 - 95 b and a plurality of first and second contact assistants 81 and 82 are formed on the passivation layer 180 , and a first alignment layer 11 is coated thereon.
- a light blocking member 220 a plurality of color filters 230 , an overcoat 250 , a common electrode 270 including first and second center and first through third lower and upper common electrode cutouts 71 - 75 b, and a second alignment layer 21 are formed on an insulating substrate 210 .
- each of the storage electrode lines 131 is nearly equidistant from two adjacent gate lines 121 and includes a plurality of fifth storage electrodes 135 expanding upward and downward.
- the storage electrode lines 131 may have various shapes and arrangements.
- Each of the drain electrodes 175 includes a wide end portion and two branches.
- the wide end portion overlaps a fifth storage electrode 135 and edges of the wide end portion are substantially parallel to edges of the fifth storage electrodes 135 .
- the branches form a hook portion enclosing the gate electrode 124 and the branches are disposed on two parallel straight lines.
- a source electrode 173 encloses end portions of the branches and has a shape like a character “S.”
- This structure having a rotational symmetry, also keeps the overlapping areas between the gate electrodes 124 and the drain electrodes 175 uniform to maintain the parasitic capacitances between the gate electrodes 124 and the drain electrodes 175 to be consistent.
- the TFT array panel 100 further includes a shielding electrode 88 disposed on the passivation layer 180 .
- the shielding electrode 88 is supplied with the common voltage and it includes longitudinal portions extending along the data lines 171 and transverse portions extending along the gate lines 121 .
- the longitudinal portions fully cover the data lines 171 , and the transverse portions connect adjacent longitudinal portions and lie within the boundary of the gate lines 121 .
- the shielding electrode 88 blocks electric fields generated between the data lines 171 and the pixel electrodes 190 and between the data lines 171 and the common electrode 270 to reduce the distortion of the voltage of the pixel electrode 190 and the signal delay of the data voltages transmitted by the data lines 171 .
- the shielding electrode 88 may serve as a light blocking member.
- Each of the center, first through third lower and first through third upper pixel electrode cutouts 71 - 74 b has at least one depressed notch at its oblique portion(s).
- the depressed notch(es) determine(s) the tilt directions of the LC molecules on the center, first through third lower and first through third upper common electrode cutouts 71 - 74 b and they may be provided at the center, first through forth lower and first through fourth upper pixel electrode cutouts 91 - 95 b.
- TFT array panel for an LCD shown in FIGS. 6-9 may be applicable to the TFT array panel shown in FIGS. 10-13 .
- FIG. 14 shows a layout view of an LCD according to another embodiment of the present invention
- FIG. 15 shows a sectional view of the LCD shown in FIG. 12 taken along the line XV-XV′.
- an LCD according to this embodiment also includes a TFT array panel 100 , a common electrode panel 200 , an LC layer 3 interposed between the TFT array and common electrode panels 100 and 200 , and a pair of polarizers 12 and 22 attached on outer surfaces of the TFT array and common electrode panels 100 and 200 .
- Layered structures of the TFT array and common electrode panels 100 and 200 according to this embodiment are similar to those shown in FIGS. 10-13 .
- a plurality of gate lines 121 including gate electrodes 124 and gate line end portions 129 and a plurality of storage electrode lines 131 including sixth storage electrodes 137 are formed on an insulating substrate 110 .
- a gate insulating layer 140 , a plurality of semiconductor stripes 152 including a plurality of semiconductor stripe projections 153 , and a plurality of ohmic contact stripes 161 including ohmic contact stripe projections 163 and a plurality of ohmic contact islands 165 are sequentially formed on the gate lines 121 and the storage electrode lines 131 .
- a plurality of data lines 171 including source electrodes 173 and data line end portions 179 and a plurality of drain electrodes 175 are formed on the ohmic contacts 163 and 165 , and a passivation layer 180 is formed thereon.
- a plurality of first, second and third contact holes 181 , 182 and 185 are provided at the passivation layer 180 and the gate insulating layer 140 .
- a plurality of pixel electrodes 190 including first and second center and first through third lower and upper pixel electrode cutouts 91 - 95 b and a plurality of first and second contact assistants 81 and 82 are formed on the passivation layer 180 , and a first alignment layer 11 is coated thereon.
- a light blocking member 220 a plurality of color filters 230 , an overcoat 250 , a common electrode 270 including first and second center and first through third lower and upper common electrode cutouts 71 - 75 b, and a second alignment layer 21 are formed on an insulating substrate 210 .
- each of the source electrodes 173 has a shape like a scoop disposed over a gate electrode 124 .
- the semiconductor stripes 152 of the TFT array panel 100 have similar planar shapes as the data lines 171 and the drain electrodes 175 as well as the underlying ohmic contacts 161 and 165 .
- the semiconductor stripe projections 153 of the semiconductor stripes 152 include some exposed portions, which are not covered with the data lines 171 or the drain electrodes 175 , such as portions located between the source electrodes 173 and the drain electrodes 175 .
- the pixel electrodes and the contact holes connecting the drain electrodes and the pixel electrodes are formed using one lithography step. Accordingly, a lithography step for forming the pixel electrodes is omitted to simplify the manufacturing method, thereby reducing the manufacturing time and cost.
- FIG. 16 is a layout view of an LCD according to another embodiment of the present invention.
- FIG. 16 the layout structure of an LCD according to this embodiment is similar to that shown in FIGS. 10-13 .
- a pixel electrode 190 is divided into a lower pixel electrode portion 190 a and an upper pixel electrode portion 190 b connected to each other through a pixel electrode connection 90 ab.
- the lower and upper pixel electrode portions 190 a and 190 b have first through forth lower and upper pixel electrode cutouts 93 a - 96 b that have symmetry with respect to a center transverse line of the pixel electrode 190 .
- a common electrode 270 has first through fifth lower and upper common electrode cutouts 73 a - 77 b disposed between the first through forth lower and upper pixel electrode cutouts 93 a - 96 b and the chamfered corners of the pixel electrode 190 .
- Individual gate lines 121 are disposed between the lower pixel electrode portions 190 a and the upper pixel electrode portions 190 b, and include a plurality of gate electrodes 124 projecting upwardly and downwardly having symmetry with respect to the gate lines 121 .
- Individual storage electrode lines 131 are disposed between adjacent pixel electrodes 190 and include pairs of seventh storage electrodes 135 a and 135 b overlapping the lower and upper pixel electrode portions 190 a and 190 b.
- pairs of drain electrodes 175 a and 175 b overlap a gate electrode 124 and have inversion symmetry with respect to a center line of the gate lines 121 .
- the pairs of drain electrodes 175 a and 175 b include expansions overlapping the pairs of seventh storage electrodes 135 a and 135 b.
- Individual source electrodes 173 enclose a pair of drain electrodes 175 a and 175 b having a shape like a character “H.”
- the present invention can be employed to any display devices including LCD and OLED display.
Abstract
A thin film transistor array panel according to an embodiment of the present invention includes: a gate electrode; a semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode connected to the semiconductor layer; and a drain electrode connected to the semiconductor layer, spaced apart from the source electrode, and including two branches overlapping the gate electrode, wherein the two branches of the drain electrode are spaced apart from each other and lie on a straight line or on two parallel straight lines.
Description
- This application claims priority from Korean Patent Application No. 10-2004-0088812 filed on Nov. 3, 2004, the disclosure of which is incorporated herein by reference in its entirety.
- 1. Field of the Invention
- The present invention relates to a thin film transistor array panel.
- 2. Description of Related Art
- An active type display device such as a liquid crystal display (LCD) and an organic light emitting diode (OLED) display includes a plurality of pixels arranged in a matrix and including field generating electrodes and switching elements. The switching elements include thin film transistors (TFTs) having three terminals, gate, source, and drain. The TFT of each pixel selectively transmits data signals to a field-generating electrode in response to gate signals.
- The display device further includes a plurality of signal lines for transmitting signals to the switching elements, which includes gate lines transmitting gate signals and data lines transmitting data signals.
- The LCD and the OLED include a panel provided with TFTs, field-generating electrodes, and signal lines, which is referred to as a TFT array panel.
- The TFT array panel has a layered structure that includes several conductive layers and insulating layers. Gate lines, data lines, and field-generating electrodes are formed of different conductive layers and separated by insulating layers.
- When an active area on a backplane for LCDs is too large to use an exposure mask, the entire exposure is accomplished by repeating a divisional exposure called step-and-repeat process. One divisional exposure unit or area is called a shot. Since transition, rotation, and distortion are generated during light exposure, the shots are not aligned accurately. Accordingly, parasitic capacitances generated between signal lines and pixel electrodes differ depending on the shots, and this causes the luminance difference between the shots, which is recognized at the pixels located at a boundary between the shots. Therefore, the stitch defect is generated on the screen of the LCD due to luminance discontinuity between the shots. In addition, the difference in the parasitic capacitance causes the difference in the kickback voltage to yield flickering.
- A thin film transistor array panel according to an embodiment of the present invention includes: a gate electrode; a semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode connected to the semiconductor layer; and a drain electrode connected to the semiconductor layer, spaced apart from the source electrode, and including two branches overlapping the gate electrode, wherein the two branches of the drain electrode are spaced apart from each other and lie on a straight line or on two parallel straight lines.
- The gate electrode may have two opposite edges meeting the two branches, respectively, and substantially parallel to each other.
- The thin film transistor array panel may further include: a gate line coupled to the gate electrode; a data line coupled to the drain electrode; and a pixel electrode coupled to the drain electrode.
- The two branches may have a symmetry with respect to a center line passing through the gate electrode and parallel to the gate line or the data line.
- The source electrode may enclose the two branches.
- The source electrode may have a symmetry with respect to the center line passing through the gate electrode and parallel to the gate line or the data line.
- The source electrode may be spaced apart from the gate line except for the source electrode.
- The source electrode may have a shape of a character H or a shape of a character H rotated by about a right angle.
- The pixel electrode may include a lower half and an upper half that are disposed opposite each other with respect to the gate line.
- The drain electrode may have a symmetry with respect to a center line of the gate line.
- The thin film transistor array panel may further include a storage electrode line overlapping at least one of the pixel electrode and the drain electrode.
- The storage electrode may be disposed near an edge of the pixel electrode.
- The storage electrode may be disposed near an edge of the pixel electrode.
- A thin film transistor according to another embodiment includes: a gate electrode having a first edge and a second edge disposed opposite the first edge; a semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode connected to the semiconductor layer; a drain electrode connected to the semiconductor layer, spaced apart from the source electrode, and including a first branch and a second branch, wherein the first branch meets the first edge of the gate electrode at a predetermined angle, the second branch meets the second edge of the gate electrode at the predetermined angle.
- The first edge of the gate electrode may be substantially parallel to the second edge of the gate electrode.
- A thin film transistor array panel according to another embodiment includes: a gate line including a gate electrode; a data line intersecting the gate line and including a source electrode; a drain electrode disposed apart from the source electrode and including two branches; a semiconductor layer connected to the source electrode and the drain electrode; a passivation layer formed on the gate line, the data line, the drain electrode, and the semiconductor layer; and a pixel electrode connected to the drain electrode, wherein the source electrode includes two concave portions connected to each other and disposed opposite each other and the two concave portions enclose respective branches of the drain electrode.
- The source electrode may include a connecting portion connected between the concave portions and the data line and the connecting portion may be spaced apart from the gate line.
- The present invention will become more apparent by describing embodiments thereof in detail with reference to the accompanying drawing in which:
-
FIG. 1 shows a layout view of a TFT array panel according to an embodiment of the present invention; -
FIG. 2 shows a sectional view of the TFT array panel shown inFIG. 1 taken along the line II-II′; -
FIG. 3 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention; -
FIG. 4 shows a sectional view of the TFT array panel shown inFIG. 3 taken along the line IV-IV′; -
FIG. 5 shows a sectional view of the TFT array panel shown inFIG. 3 taken along the line V-V′; -
FIG. 6 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention; -
FIG. 7 shows a layout view of a common electrode panel for an LCD according to an embodiment of the present invention; -
FIG. 8 shows a sectional view of an LCD including the TFT array panel shown inFIG. 6 and the common electrode panel shown inFIG. 7 ; -
FIG. 9 shows a sectional view of the LCD shown inFIG. 8 taken along the line IX-IX′; -
FIG. 10 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention; -
FIG. 11 shows a layout view of a common electrode panel for an LCD according to another embodiment of the present invention; -
FIG. 12 shows a sectional view of an LCD including the TFT array panel shown inFIG. 10 and the common electrode panel shown inFIG. 11 ; -
FIG. 13 shows a sectional view of the LCD shown inFIG. 12 taken along the line XIII-XIII′; -
FIG. 14 shows a layout view of an LCD according to another embodiment of the present invention; -
FIG. 15 shows a sectional view of the LCD shown inFIG. 12 taken along the line XV-XV′; and -
FIG. 16 shows a layout view of an LCD according to another embodiment of the present invention. - The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
- In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numerals refer to like elements throughout. It will be understood that when an element such as a layer, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.
- A TFT array panel according to an embodiment of the present invention will be described in detail with reference to
FIGS. 1 and 2 . -
FIG. 1 shows a layout view of a TFT array panel according to an embodiment of the present invention, andFIG. 2 shows a sectional view of the TFT array panel shown inFIG. 1 taken along the line II-II′. - A plurality of
gate lines 121 is formed on an insulatingsubstrate 110 such as transparent glass or plastic. - The gate lines 121 transmit gate signals and extend substantially in a transverse direction. Each of the gate lines 121 includes a plurality of
gate electrodes 124 projecting upwardly, a plurality ofgate line projections 127 projecting downwardly, and a gateline end portion 129 having a large area for contact with another layer (not shown) or an external driving circuit (not shown). A gate driving circuit (not shown) for generating gate signals may be mounted on a flexible printed circuit (FPC) film (not shown), which may be attached to the insulatingsubstrate 110, directly mounted on the insulatingsubstrate 110, or integrated onto the insulatingsubstrate 110. The gate lines 121 may extend to be connected to a driving circuit (not shown) that may be integrated on the insulatingsubstrate 110. - The gate lines 121 are preferably made of Al containing metal such as Al and Al alloy, Ag containing metal such as Ag and Ag alloy, Cu containing metal such as Cu and Cu alloy, Mo containing metal such as Mo and Mo alloy, Cr, Ta, or Ti. However, they may have a multi-layered structure including two conductive films (not shown) having different physical characteristics. One of the two films is preferably made of low resistivity metal including Al containing metal, Ag containing metal, and Cu containing metal for reducing signal delay or voltage drop. The other film is preferably made of material such as Mo containing metal, Cr, Ta, or Ti, which has good physical, chemical, and electrical contact characteristics with other materials such as indium tin oxide (ITO) or indium zinc oxide (IZO). Good examples of the combination of the two films are a lower Cr film and an upper Al (alloy) film and a lower Al (alloy) film and an upper Mo (alloy) film. However, the
gate lines 121 may be made of other metals or conductors. - Lateral sides of the
gate lines 121 are inclined relative to a surface of the insulatingsubstrate 110, and the inclination angle thereof ranges about 30-80 degrees. - A
gate insulating layer 140 preferably made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the gate lines 121. - A plurality of first and
second semiconductor islands gate insulating layer 140. Thesecond semiconductor islands 154 are disposed on thegate electrodes 124 such that edges of thesecond semiconductor islands 154 are disposed on thegate electrodes 124 to block a light emitted from a backlight lamp from being incident onto thesecond semiconductor islands 154, thereby reducing a photocurrent. Thefirst semiconductor islands 151 are disposed on thegate lines 121 and cover lower and upper edges of the gate lines 121. - A plurality of second and third
ohmic contact islands second semiconductor islands 154. A plurality of firstohmic contacts 161 are also formed on thefirst semiconductor islands 151. The first, second and thirdohmic contacts - The lateral sides of the first and
second semiconductor islands ohmic contacts substrate 110, and the inclination angles thereof are preferably in a range of about 30-80 degrees. - A plurality of
data lines 171, a plurality ofdrain electrodes 175, and a plurality ofstorage capacitor conductors 177 are formed on the first, second and thirdohmic contacts gate insulating layer 140. - The data lines 171 transmit data signals and extend substantially in a longitudinal direction to intersect the gate lines 121. Each
data line 171 includes a plurality ofsource electrodes 173 projecting toward thegate electrodes 124 and having a bilateral symmetry on thegate electrodes 124. Each of thesource electrodes 173 includes a longitudinal portion and two pairs of transverse portions extending from both ends of the longitudinal portion in left and right directions having a shape like a character “H” rotated about 90 degrees. Each of thedata lines 171 further includes a dataline end portion 179 having a large area for contact with another layer (not shown) or an external driving circuit (not shown). A data driving circuit (not shown) for generating the data signals may be mounted on a FPC film (not shown), which may be attached to the insulatingsubstrate 110, directly mounted on the insulatingsubstrate 110, or integrated onto the insulatingsubstrate 110. The data lines 171 may extend to be connected to a driving circuit (not shown) that may be integrated on the insulatingsubstrate 110. - The
drain electrodes 175 are separated from thedata lines 171 and disposed opposite thesource electrodes 173 with respect to thegate electrodes 124. Each of thedrain electrodes 175 includes a wide portion and two branches. The two branches lie on a straight line or on two parallel straight lines and are spaced apart from each other. The branches form a hook portion having a bilateral symmetry. The hook portion has a shape like a character “C” and is disposed partly enclosing agate electrode 124, and end portions of the hook portion pass through opposite longitudinal edges to reach inner portions of thegate electrode 124. Both ends of the hook portion are disposed on agate electrode 124 and partly enclosed by asource electrode 173. - The symmetrical arrangement of the
drain electrodes 175 with respect to thegate electrodes 124 causes a uniform overlapping area between thedrain electrodes 175 and thegate electrodes 124 regardless of deformation of masks such as transition, rotation, and twist. Although masks for forming thegate electrodes 124 and thedrain electrodes 175 are shifted, rotated, or twisted to misalign thegate electrodes 124 and thedrain electrodes 175 in a transverse direction such that one of left and right overlapping areas between thegate electrodes 124 and thedrain electrodes 175 is decreased, the other of the left and right overlapping areas is increased to compensate from the decrease of the one overlapping area. Accordingly, the parasitic capacitances between thegate electrodes 124 and thedrain electrodes 175 can be maintained uniformly to reduce the flickering of the image. In addition, the longitudinal misalignment between thegate electrodes 124 and thedrain electrodes 175 does not affect the overlapping area between thegate electrodes 124 and thedrain electrodes 175. - The
storage capacitor conductors 177 overlap thegate line projections 127. - A
gate electrode 124, asource electrode 173, and adrain electrode 175 along with a projection of asecond semiconductor island 154 form a TFT having a channel formed in thesecond semiconductor island 154 disposed between thesource electrode 173 and thedrain electrode 175. - The data lines 171, the
drain electrodes 175, and thestorage capacitor conductors 177 are preferably made of a refractory metal such as Cr, Mo, Ta, Ti, or alloys thereof. However, they may have a multilayered structure including a refractory metal film (not shown) and a low resistivity film (not shown). Examples of the multi-layered structure are a double-layered structure including a lower Cr/Mo (alloy) film and an upper Al (alloy) film and a triple-layered structure of a lower Mo (alloy) film, an intermediate Al (alloy) film, and an upper Mo (alloy) film. However, thedata lines 171, thedrain electrodes 175, and thestorage capacitor conductors 177 may be made of other metals or conductors. - The data lines 171, the
drain electrodes 175, and thestorage capacitor conductors 177 have inclined edge profiles, and the inclination angles thereof range about 30-80 degrees. - The first, second and third
ohmic contacts second semiconductor islands overlying data lines 171 anddrain electrodes 175 thereon and reduce the contact resistance therebetween. Thefirst semiconductor islands 151 smooth the profile of the surface, thereby preventing the disconnection of the data lines 171. The first andsecond semiconductor islands data lines 171, thedrain electrodes 175, or thestorage capacitor conductors 177, such as portions located between thesource electrodes 173 and thedrain electrodes 175. - A
passivation layer 180 is formed on thedata lines 171, thedrain electrodes 175, thestorage capacitor electrodes 177, and the exposed portions of the first andsecond semiconductor islands passivation layer 180 is preferably made of an inorganic or organic insulator and it may have a flat top surface. Examples of the inorganic insulator include silicon nitride and silicon oxide. The organic insulator may have photosensitivity and a dielectric constant of less than about 4.0. Thepassivation layer 180 may include a lower film of an inorganic insulator and an upper film of an organic insulator such that it takes the excellent insulating characteristics of the organic insulator while preventing the exposed portions of the first andsecond semiconductor islands - The
passivation layer 180 has a plurality of second, third and fourth contact holes 182, 185 and 187 exposing the dataline end portions 179, thedrain electrodes 175, and thegate line projections 127, respectively. Thepassivation layer 180 and thegate insulating layer 140 have a plurality of first contact holes 181 exposing the gateline end portions 129. - A plurality of
pixel electrodes 190 and a plurality of first andsecond contact assistants passivation layer 180. They are preferably made of transparent conductor such as ITO or IZO or reflective conductor such as Ag, Al, Cr, or alloys thereof. - The
pixel electrodes 190 are physically and electrically connected to thedrain electrodes 175 through the third contact holes 185 such that thepixel electrodes 190 receive data voltages from thedrain electrodes 175. The pixel 10electrodes 190 supplied with the data voltages generate electric fields in cooperation with a common electrode (not shown) of an opposing display panel (not shown) supplied with a common voltage, which determine the orientations of liquid crystal (LC) molecules (not shown) of an LC layer (not shown) disposed between thepixel electrodes 190 and the common electrode. Apixel electrode 190 and the common electrode form a capacitor referred to as a “liquid crystal capacitor,” which stores applied voltages after the TFT turns off. - In addition, the
pixel electrodes 190 are connected to thestorage capacitor conductors 177 overlapping thegate line projections 127. Apixel electrode 190 and astorage capacitor conductor 177 connected thereto and agate line projection 127 form an additional capacitor referred to as a “storage capacitor,” which enhances the voltage storing capacity of the liquid crystal capacitor. - A TFT array panel for an LCD according to another embodiment of the present invention will be described in detail with reference to
FIGS. 3, 4 and 5. -
FIG. 3 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention,FIG. 4 shows a sectional view of the TFT array panel shown inFIG. 3 taken along the line IV-IV′, andFIG. 5 shows a sectional view of the TFT array panel shown inFIG. 3 taken along the line V-V′. - Referring to
FIGS. 3-5 , the layered structure of the TFT array panel according to this embodiment is similar to those shown inFIGS. 1 and 2 . - That is, a plurality of
gate lines 121 includinggate electrodes 124 are formed on an insulatingsubstrate 110, and agate insulating layer 140, a plurality ofsemiconductor stripes 152 including a plurality of semiconductor stripe projections 153, and a plurality ofohmic contacts 161 includingohmic contact projections 163 and a plurality ofohmic contact islands 165 are sequentially formed thereon. A plurality ofdata lines 171 includingsource electrodes 173, a plurality ofdrain electrodes 175, and a plurality ofstorage capacitor conductors 177 are formed on the ohmic contact stripes andislands passivation layer 180 is formed thereon. A plurality of first, second, third and fourth contact holes 181, 182, 185 and 187 are provided at thepassivation layer 180 and thegate insulating layer 140. A plurality ofpixel electrodes 190 and a plurality of first andsecond contact assistants passivation layer 180. - In this embodiment, the
source electrodes 173 are spaced apart from the gate lines 121. - Furthermore, the TFT array panel according to this embodiment provides a plurality of
storage electrode lines 131, which are separated from thegate lines 121, on the same layer as thegate lines 121 without gate line projections. Thestorage electrode lines 131 are supplied with a predetermined voltage such as the common voltage and extend substantially parallel to the gate lines 121. Each of thestorage electrode lines 131 is disposed between twoadjacent gate lines 121 and it is nearly equidistant from the two adjacent gate lines 121. Thestorage electrode lines 131 overlap thestorage capacitor conductors 177 to form storage capacitors. - However, the
storage electrode lines 131 may have various shapes and arrangements. For example, thestorage electrode lines 131 may be omitted if the storage capacitance generated by the overlap of thegate lines 121 and thepixel electrodes 190 is sufficient. Thestorage electrode lines 131 may be disposed near thegate lines 121 to increase the aperture ratio. - In addition, the
semiconductor stripes 152 of theTFT array panel 100 according to this embodiment have similar planar shapes as thedata lines 171 and thedrain electrodes 175 as well as the underlying ohmic contact stripes andislands data lines 171 or thedrain electrodes 175, such as portions located between thesource electrodes 173 and thedrain electrodes 175. - Furthermore, the
TFT array panel 100 further includes a plurality of fifth semiconductor islands 157 and a plurality of fifthohmic contact islands 167 disposed under thestorage capacitor conductors 177. - A manufacturing method of the TFT array panel according to an embodiment simultaneously forms the
data lines 171, thedrain electrodes 175, thesemiconductors 151, and the ohmic contact stripes andislands - A photoresist pattern for the photolithography process has position-dependent thickness, and in particular, it has first and second portions with decreasing thickness. The first portions are located on wire areas that will be occupied by the
data lines 171 and thedrain electrodes 175, and the second portions are located on channel areas of the TFTs. - The position-dependent thickness of the photoresist is obtained by several techniques, for example, by providing translucent areas on the exposure mask as well as transparent areas and light blocking opaque areas. The translucent areas may have a slit pattern, a lattice pattern, a thin film(s) with intermediate transmittance or intermediate thickness. When using a slit pattern, it is preferable that the width of the slits or the distance between the slits is smaller than the resolution of a light exposer used for the photolithography. Another example is to use reflowable photoresist. Once a photoresist pattern made of a reflowable material is formed by using a normal exposure mask only with transparent areas and opaque areas, it is subject to reflow process to flow onto areas without the photoresist, thereby forming thin portions.
- As a result, the manufacturing process is simplified by omitting a photolithography step.
- Many of the above-described features of the TFT array panel for an LCD shown in
FIGS. 1 and 2 may be applicable to the TFT array panel shown inFIGS. 3-5 . - An LCD according to another embodiment of the present invention will be described in detail with reference to
FIGS. 6, 7 , 8 and 9. -
FIG. 6 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention,FIG. 7 shows a layout view of a common electrode panel for an LCD according to an embodiment of the present invention,FIG. 8 shows a sectional view of an LCD including the TFT array panel shown inFIG. 6 and the common electrode panel shown inFIG. 7 , andFIG. 9 shows a sectional view of the LCD shown inFIG. 8 taken along the line IX-IX′. - Referring to
FIGS. 6-9 , an LCD according to this embodiment also includes aTFT array panel 100, acommon electrode panel 200, a liquid crystal (LC)layer 3 interposed between the TFT array andcommon electrode panels polarizers common electrode panels - The layered structure of the
TFT array panel 100 according to this embodiment is similar to those shown inFIGS. 1 and 2 . - A plurality of
gate lines 121 includinggate electrodes 124 and gateline end portions 129 are formed on an insulatingsubstrate 110, and agate insulating layer 140, a plurality of third, fourth andsecond semiconductor islands ohmic contact islands data lines 171 includingsource electrodes 173 and data lineend portions 179 and a plurality ofdrain electrodes 175 are formed on theohmic contact islands gate insulating layer 140, and apassivation layer 180 is formed thereon. A plurality of first, second and third contact holes 181, 182 and 185 are provided at thepassivation layer 180 and thegate insulating layer 140. A plurality ofpixel electrodes 190 and a plurality of first andsecond contact assistants passivation layer 180. - The TFT array panel according to this embodiment provides a plurality of
storage electrode lines 131, which are separated from thegate lines 121, on the same layer as thegate lines 121 without gate line projections. Thestorage electrode lines 131 are supplied with a predetermined voltage and each of thestorage electrode lines 131 includes a stem extending substantially parallel to thegate lines 121, a plurality of first, second, third andfourth storage electrodes storage electrode lines 131 is disposed between twoadjacent gate lines 121 and the stem is close to an upper one of the two adjacent gate lines 121. - The first and the
second storage electrodes first storage electrodes 133 a have a fixed end portion connected to the stem and a free end portion disposed opposite the fixed end portion and having a projection. The third and the fourstorage electrodes first storage electrodes 133 a and upper and lower ends of thesecond storage electrodes 133 b, respectively. Each of the storage connections 133 e is connected between adjacent first through fourth storage electrodes 133 a-133 d. However, thestorage electrode lines 131 may have various shapes and arrangements. - A
pixel electrode 190 overlaps astorage electrode line 131 including first through fourth storage electrodes 133 a-133 d. Eachpixel electrode 190 is shaped approximately like a rectangle that having lower and upper transverse main edges nearly parallel to thegate lines 121, left and right longitudinal main edges nearly parallel to thedata lines 171 and chamfered corners. The chamfered corners of thepixel electrode 190 make an angle of about 45 degrees with the gate lines 121. The left and right longitudinal main edges of thepixel electrode 190 are disposed closer to adata line 171 than the first andsecond storage electrodes pixel electrode 190 with adrain electrode 175 connected thereto, and thestorage electrode line 131 including the first through fourth storage electrodes 133 a-133 d form a storage capacitor. - The
source electrodes 173 are spaced apart from thegate lines 121 and the ohmic contacts 161 b are disposed between edges of thegate electrodes 124 and thesource electrodes 173. Thethird semiconductor islands 151 a and the ohmic contacts 161 a are disposed between thegate lines 121 and the data lines 171. - A plurality of
isolated metal pieces 178 are formed on thegate insulating layer 140, thepassivation layer 180 and thegate insulating layer 140 that has a plurality of fixed end contact holes 183 a exposing portions of thestorage electrode lines 131 near fixed end portions of thefirst storage electrodes 133 a, and a plurality of free end contact holes 183 b exposing free end portions of thefirst storage electrodes 133 a, and a plurality ofoverpasses 83 are formed on thepassivation layer 180. - The
isolated metal pieces 178 disposed on thegate lines 121 near thefirst storage electrodes 133 a, and theoverpasses 83 are disposed on theisolated metal pieces 178. Theoverpasses 83 cross over thegate lines 121 and are connected to exposed portions of thestorage electrode lines 131 and exposed free end portions of thefirst storage electrodes 133 a through the fixed end and free end contact holes 183 a and 183 b, respectively, which are disposed opposite each other with respect to the gate lines 121. Thestorage electrode lines 131 along with theoverpasses 83 can be used for repairing defects in thegate lines 121, thedata lines 171, or TFTs. - Each
pixel electrode 190 has afirst center cutout 91, a firstlower cutout 93 a, and a firstupper cutout 93 b, which partition thepixel electrode 190 into a plurality of partitions. The first center, first lower and first upperpixel electrode cutouts pixel electrode 190. - The first lower and first upper
pixel electrode cutouts pixel electrode 190 near right angles approximately to a center of the left longitudinal main edge of thepixel electrode 190 and overlap the third and thefourth storage electrodes pixel electrode cutouts pixel electrode 190, respectively, which can be divided by the imaginary transverse line. The first lower and first upperpixel electrode cutouts gate lines 121, and extend substantially perpendicularly to each other. - The first center
pixel electrode cutout 91 extends along the imaginary transverse line and has an inlet from the right main edge of thepixel electrode 190, which has a pair of inclined edges substantially parallel to the firstlower cutout 93 a and the firstupper cutout 93 b, respectively. - Accordingly, the lower half of the
pixel electrode 190 is partitioned into two lower partitions by the first lowerpixel electrode cutout 93 a and the upper half of thepixel electrode 190 is also partitioned into two upper partitions by the first upperpixel electrode cutout 93 b. The number of partitions or the number of pixel electrode cutouts varies depending on the design factors such as the size of the pixels, the ratio of the transverse main edges to the longitudinal main edges of thepixel electrode 190, and the type and characteristics of theLC layer 3. - The description of the
common electrode panel 200 follows with reference toFIGS. 7-9 . - A
light blocking member 220 referred to as a black matrix for preventing light leakage is formed on an insulatingsubstrate 210 such as transparent glass or plastic. Thelight blocking member 220 has a plurality of openings 225 that face thepixel electrodes 190 and it may have a substantially similar planar shape to thepixel electrodes 190. Otherwise, thelight blocking member 220 may include a plurality of rectilinear portions facing thedata lines 171 on theTFT array panel 100 and a plurality of widened portions facing the TFTs on theTFT array panel 100. - A plurality of
color filters 230 is formed on the insulatingsubstrate 210 and is disposed substantially in the area enclosed by thelight blocking member 220. The color filters 230 may extend substantially in a longitudinal direction along thepixel electrodes 190. The color filters 230 may represent one of the primary colors such as red, green or blue. - An
overcoat 250 is formed on thecolor filters 230 and thelight blocking member 220. Theovercoat 250 is preferably made of an organic insulator. It prevents thecolor filters 230 from being exposed and provides a flat surface. Theovercoat 250 may be omitted. - A
common electrode 270 is formed on theovercoat 250. Thecommon electrode 270 is preferably made of transparent conductive material such as ITO and IZO. - The
common electrode 270 faces apixel electrode 190 and includes afirst center cutout 71, a firstlower cutout 73 a, and a firstupper cutout 73 b. Each of the first center, first lower and first uppercommon electrode cutouts pixel electrode cutouts pixel electrode cutout pixel electrode 190. Each of the first center, first lower and first uppercommon electrode cutouts pixel electrode cutout 93 a or the first upperpixel electrode cutout 93 b. The first center, first lower and first uppercommon electrode cutouts pixel electrode 190. - Each of the first lower and first upper
common electrode cutouts pixel electrode 190 approximately to the lower or upper transverse main edge of thepixel electrode 190. Each of the transverse and longitudinal portions extend from a respective end of the oblique portion along an edge of thepixel electrode 190, overlapping the edge of thepixel electrode 190, and making an obtuse angle with the oblique portion. - The first center
common electrode cutout 71 includes a central transverse portion, a pair of oblique portions, and a pair of terminal longitudinal portions. The central transverse portion extends approximately from the left longitudinal main edge of thepixel electrode 190 along the above-described transverse line. The oblique portions extend from an end of the central transverse portion approximately to the right longitudinal main edge of thepixel electrode 190 and make oblique angles with the central transverse portion. The terminal longitudinal portions extend from the ends of the respective oblique portions along the right longitudinal main edge of thepixel electrode 190, overlapping the right longitudinal main edge of thepixel electrode 190, and making obtuse angles with the respective oblique portions. - The number of the first center, first lower and first upper
common electrode cutouts light blocking member 220 may also overlap the first center, first lower and first uppercommon electrode cutouts common electrode cutouts - First and second alignment layers 11 and 21 that may be homeotropic are coated on inner surfaces of the TFT array and
common electrode panels - The pair of
polarizers common electrode panels common electrode panels gate lines 121 and thedata lines 171, the cost for the pair ofpolarizers polarizers - The LCD may further include at least one retardation film (not shown) for compensating the retardation of the
LC layer 3. The LCD may further include a backlight unit (not shown) supplying light to theLC layer 3 through the pair ofpolarizers common electrode panels - It is preferable that the
LC layer 3 has negative dielectric anisotropy and it is subjected to a vertical alignment that LC molecules 31 in theLC layer 3 are aligned such that their long axes are substantially vertical to the surfaces of the TFT array andcommon electrode panels polarizers - Upon application of the common voltage to the
common electrode 270 and a data voltage to apixel electrode 190, an electric field substantially perpendicular to the surfaces of the TFT array andcommon electrode panels common electrode 270 are commonly referred to as “field generating electrodes.” The LC molecules 31 tend to change their orientations in response to the electric field such that their long axes are perpendicular to the field direction. - The first center, first lower and first upper
pixel electrode cutouts common electrode cutouts pixel electrodes 190 distort the electric field to have a horizontal component that is substantially perpendicular to the edges of the first center, first lower and first upperpixel electrode cutouts common electrode cutouts pixel electrodes 190. - Referring to
FIG. 8 , the first center, first lower and first uppercommon electrode cutouts pixel electrode cutouts pixel electrode 190 into a plurality of sub-areas and each sub-area has two primary edges making oblique angles with the main edges of thepixel electrode 190. Since most LC molecules 31 on each sub-area tilt perpendicular to the primary edges, the azimuthal distribution of the tilt directions are localized to four directions, thereby increasing the reference viewing angle of the LCD. The width of the sub-area is preferably from about 12 microns to about 20 microns, and more preferably from about 17 microns to about 19 microns. - The width of the first center, first lower and first upper
common electrode cutouts pixel electrode cutouts common electrode cutouts pixel electrode cutouts - At least one of the first center, first lower and first upper
common electrode cutouts pixel electrode cutouts pixel electrode 190 or thecommon electrode 270. - Many of the above-described features of the TFT array panel for an LCD shown in
FIGS. 1 and 2 may be applicable to the TFT array panel shown inFIGS. 6-9 . - An LCD according to another embodiment of the present invention will be described in detail with reference to
FIGS. 10, 11 , 12 and 13. -
FIG. 10 shows a layout view of a TFT array panel for an LCD according to another embodiment of the present invention,FIG. 11 shows a layout view of a common electrode panel for an LCD according to another embodiment of the present invention,FIG. 12 shows a sectional view of an LCD including the TFT array panel shown inFIG. 10 and the common electrode panel shown inFIG. 11 , andFIG. 13 shows a sectional view of the LCD shown inFIG. 12 taken along the line XIII-XIII′. - Referring to
FIGS. 10-13 , an LCD according to this embodiment also includes aTFT array panel 100, acommon electrode panel 200, anLC layer 3 interposed between the TFT array andcommon electrode panels polarizers common electrode panels - Layered structures of the TFT array and
common electrode panels FIGS. 6-9 . - Regarding the
TFT array panel 100, a plurality ofgate lines 121 includinggate electrodes 124 and gateline end portions 129 and a plurality ofstorage electrode lines 131 are formed on an insulatingsubstrate 110. Agate insulating layer 140, a plurality of first andsecond semiconductor islands ohmic contacts gate lines 121 and the storage electrode lines 131. A plurality ofdata lines 171 includingsource electrodes 173 and data lineend portions 179 and a plurality ofdrain electrodes 175 are formed on theohmic contacts gate insulating layer 140, and apassivation layer 180 is formed thereon. A plurality of first, second and third contact holes 181, 182 and 185 are provided at thepassivation layer 180 and thegate insulating layer 140. A plurality ofpixel electrodes 190 including first and second center and first through third lower and upper pixel electrode cutouts 91-95 b and a plurality of first andsecond contact assistants passivation layer 180, and afirst alignment layer 11 is coated thereon. - Regarding the
common electrode panel 200, alight blocking member 220, a plurality ofcolor filters 230, anovercoat 250, acommon electrode 270 including first and second center and first through third lower and upper common electrode cutouts 71-75 b, and asecond alignment layer 21 are formed on an insulatingsubstrate 210. - In this embodiment, each of the
storage electrode lines 131 is nearly equidistant from twoadjacent gate lines 121 and includes a plurality offifth storage electrodes 135 expanding upward and downward. However, thestorage electrode lines 131 may have various shapes and arrangements. - Each of the
drain electrodes 175 includes a wide end portion and two branches. The wide end portion overlaps afifth storage electrode 135 and edges of the wide end portion are substantially parallel to edges of thefifth storage electrodes 135. The branches form a hook portion enclosing thegate electrode 124 and the branches are disposed on two parallel straight lines. Asource electrode 173 encloses end portions of the branches and has a shape like a character “S.” - This structure, having a rotational symmetry, also keeps the overlapping areas between the
gate electrodes 124 and thedrain electrodes 175 uniform to maintain the parasitic capacitances between thegate electrodes 124 and thedrain electrodes 175 to be consistent. - The
TFT array panel 100 according to this embodiment further includes a shieldingelectrode 88 disposed on thepassivation layer 180. The shieldingelectrode 88 is supplied with the common voltage and it includes longitudinal portions extending along thedata lines 171 and transverse portions extending along the gate lines 121. The longitudinal portions fully cover thedata lines 171, and the transverse portions connect adjacent longitudinal portions and lie within the boundary of the gate lines 121. The shieldingelectrode 88 blocks electric fields generated between thedata lines 171 and thepixel electrodes 190 and between thedata lines 171 and thecommon electrode 270 to reduce the distortion of the voltage of thepixel electrode 190 and the signal delay of the data voltages transmitted by the data lines 171. Since there is no electric field between the shieldingelectrode 88 and thecommon electrode 270, LC molecules (not shown) on the shieldingelectrode 88 remain in their initial orientations and thus the light incident thereon is blocked. Accordingly, the shieldingelectrode 88 may serve as a light blocking member. - Each of the center, first through third lower and first through third upper pixel electrode cutouts 71-74 b has at least one depressed notch at its oblique portion(s). The depressed notch(es) determine(s) the tilt directions of the LC molecules on the center, first through third lower and first through third upper common electrode cutouts 71-74 b and they may be provided at the center, first through forth lower and first through fourth upper pixel electrode cutouts 91-95 b.
- Many of the above-described features of the TFT array panel for an LCD shown in
FIGS. 6-9 may be applicable to the TFT array panel shown inFIGS. 10-13 . - An LCD according to another embodiment of the present invention will be described in detail with reference to
FIGS. 14 and 15 . -
FIG. 14 shows a layout view of an LCD according to another embodiment of the present invention, andFIG. 15 shows a sectional view of the LCD shown inFIG. 12 taken along the line XV-XV′. - Referring to
FIGS. 14 and 15 , an LCD according to this embodiment also includes aTFT array panel 100, acommon electrode panel 200, anLC layer 3 interposed between the TFT array andcommon electrode panels polarizers common electrode panels - Layered structures of the TFT array and
common electrode panels FIGS. 10-13 . - Regarding the
TFT array panel 100, a plurality ofgate lines 121 includinggate electrodes 124 and gateline end portions 129 and a plurality ofstorage electrode lines 131 including sixth storage electrodes 137 are formed on an insulatingsubstrate 110. Agate insulating layer 140, a plurality ofsemiconductor stripes 152 including a plurality of semiconductor stripe projections 153, and a plurality ofohmic contact stripes 161 including ohmiccontact stripe projections 163 and a plurality ofohmic contact islands 165 are sequentially formed on thegate lines 121 and the storage electrode lines 131. A plurality ofdata lines 171 includingsource electrodes 173 and data lineend portions 179 and a plurality ofdrain electrodes 175 are formed on theohmic contacts passivation layer 180 is formed thereon. A plurality of first, second and third contact holes 181, 182 and 185 are provided at thepassivation layer 180 and thegate insulating layer 140. A plurality ofpixel electrodes 190 including first and second center and first through third lower and upper pixel electrode cutouts 91-95 b and a plurality of first andsecond contact assistants passivation layer 180, and afirst alignment layer 11 is coated thereon. - Regarding the
common electrode panel 200, alight blocking member 220, a plurality ofcolor filters 230, anovercoat 250, acommon electrode 270 including first and second center and first through third lower and upper common electrode cutouts 71-75 b, and asecond alignment layer 21 are formed on an insulatingsubstrate 210. - In this embodiment, each of the
source electrodes 173 has a shape like a scoop disposed over agate electrode 124. - In addition, the
semiconductor stripes 152 of theTFT array panel 100 according to this embodiment have similar planar shapes as thedata lines 171 and thedrain electrodes 175 as well as the underlyingohmic contacts semiconductor stripes 152 include some exposed portions, which are not covered with thedata lines 171 or thedrain electrodes 175, such as portions located between thesource electrodes 173 and thedrain electrodes 175. - As described above, the pixel electrodes and the contact holes connecting the drain electrodes and the pixel electrodes are formed using one lithography step. Accordingly, a lithography step for forming the pixel electrodes is omitted to simplify the manufacturing method, thereby reducing the manufacturing time and cost.
- An LCD according to another embodiment of the present invention will be described in detail with reference to
FIG. 16 . -
FIG. 16 is a layout view of an LCD according to another embodiment of the present invention. - Referring to
FIG. 16 , the layout structure of an LCD according to this embodiment is similar to that shown inFIGS. 10-13 . - In this embodiment, a
pixel electrode 190 is divided into a lowerpixel electrode portion 190 a and an upperpixel electrode portion 190 b connected to each other through a pixel electrode connection 90 ab. The lower and upperpixel electrode portions pixel electrode 190. - A
common electrode 270 has first through fifth lower and upper common electrode cutouts 73 a-77 b disposed between the first through forth lower and upper pixel electrode cutouts 93 a-96 b and the chamfered corners of thepixel electrode 190. -
Individual gate lines 121 are disposed between the lowerpixel electrode portions 190 a and the upperpixel electrode portions 190 b, and include a plurality ofgate electrodes 124 projecting upwardly and downwardly having symmetry with respect to the gate lines 121. - Individual
storage electrode lines 131 are disposed betweenadjacent pixel electrodes 190 and include pairs of seventh storage electrodes 135 a and 135 b overlapping the lower and upperpixel electrode portions - Individual pairs of
drain electrodes gate electrode 124 and have inversion symmetry with respect to a center line of the gate lines 121. The pairs ofdrain electrodes -
Individual source electrodes 173 enclose a pair ofdrain electrodes - The present invention can be employed to any display devices including LCD and OLED display.
- Although preferred embodiments of the present invention have been described in detail hereinabove, it should be clearly understood that many variations and/or modifications of the basic inventive concepts herein taught which may appear to those skilled in the present art will still fall within the spirit and scope of the present invention, as defined in the appended claims.
Claims (20)
1. A thin film transistor array panel comprising:
a gate electrode;
a semiconductor layer;
a gate insulating layer disposed between the gate electrode and the semiconductor layer;
a source electrode connected to the semiconductor layer; and
a drain electrode connected to the semiconductor layer, spaced apart from the source electrode, and including two branches overlapping the gate electrode,
wherein the two branches of the drain electrode are spaced apart from each other and lie on a straight line or on two parallel straight lines.
2. The thin film transistor array panel of claim 1 , wherein the gate electrode has two opposite edges meeting the two branches, respectively, and substantially parallel to each other.
3. The thin film transistor array panel of claim 1 , further comprising:
a gate line coupled to the gate electrode;
a data line coupled to the drain electrode; and
a pixel electrode coupled to the drain electrode.
4. The thin film transistor array panel of claim 3 , wherein the two branches have symmetry with respect to a center line passing through the gate electrode and parallel to the gate line or the data line.
5. The thin film transistor array panel of claim 4 , wherein the source electrode encloses the two branches.
6. The thin film transistor array panel of claim 5 , wherein the source electrode has symmetry with respect to the center line passing through the gate electrode and parallel to the gate line or the data line.
7. The thin film transistor array panel of claim 6 , wherein the source electrode is spaced apart from the gate line except for the source electrode.
8. The thin film transistor array panel of claim 6 , wherein the source electrode has a shape like a character “H” or a shape like a character “H” rotated by about 90 degrees.
9. The thin film transistor array panel of claim 8 , wherein the pixel electrode includes a lower half and an upper half that are disposed opposite each other with respect to the gate line.
10. The thin film transistor array panel of claim 9 , wherein the drain electrode has symmetry with respect to a center line of the gate line.
11. The thin film transistor array panel of claim 1 , further comprising a storage electrode line overlapping at least one of the pixel electrode and the drain electrode.
12. The thin film transistor array panel of claim 11 , wherein the storage electrode is disposed near an edge of the pixel electrode.
13. The thin film transistor array panel of claim 11 , wherein the storage electrode is disposed near an edge of the drain electrode.
14. A thin film transistor comprising:
a gate electrode having a first edge and a second edge disposed opposite the first edge;
a semiconductor layer;
a gate insulating layer disposed between the gate electrode and the semiconductor layer;
a source electrode connected to the semiconductor layer;
a drain electrode connected to the semiconductor layer, spaced apart from the source electrode, and including a first branch and a second branch,
wherein the first branch meets the first edge of the gate electrode at a one predetermined angle, and the second branch meets the second edge of the gate electrode at the same or another predetermined angle.
15. The thin film transistor of claim 14 , wherein the first edge of the gate electrode is substantially parallel to the second edge of the gate electrode.
16. A thin film transistor array panel comprising:
a gate line including a gate electrode;
a data line intersecting the gate line and including a source electrode;
a drain electrode disposed apart from the source electrode and including two branches;
a semiconductor layer connected to the source electrode and the drain electrode;
a passivation layer formed on the gate line, the data line, the drain electrode, and the semiconductor layer; and
a pixel electrode connected to the drain electrode,
wherein the source electrode includes two concave portions connected to each other and disposed opposite each other, and the two concave portions enclose respective branches of the drain electrode.
17. The thin film transistor of claim 16 , wherein the source electrode comprises a connecting portion connected between the concave portions and the data line and the connecting portion is spaced apart from the gate line.
18. The thin film transistor of claim 17 , further comprising a partitioning member partitioning the pixel electrode.
19. The thin film transistor of claim 17 , wherein the pixel electrode has a cutout.
20. The thin film transistor of claim 18 , wherein the pixel electrode has a chamfered edge.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090244416A1 (en) * | 2008-03-31 | 2009-10-01 | Au Optronics Corp. | Active Array Substrate, Electrode Substrate, and Liquid Crystal Display Panel |
JP2014206762A (en) * | 2006-05-24 | 2014-10-30 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | Display substrate, method for manufacturing the same, and liquid crystal display device including the same |
US20180108676A1 (en) * | 2016-03-30 | 2018-04-19 | Boe Technology Group Co., Ltd. | Array substrate, method of manufacturing the same, and display device |
US20210343959A1 (en) * | 2017-12-14 | 2021-11-04 | Samsung Display Co., Ltd. | Display apparatus and manufacturing method of the same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080038590A (en) * | 2006-10-30 | 2008-05-07 | 삼성전자주식회사 | Thin film trangister substrate and manufacturing method thereof |
KR101739154B1 (en) * | 2009-07-17 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
KR101893992B1 (en) * | 2011-12-15 | 2018-08-31 | 삼성코닝어드밴스드글라스 유한회사 | Thin film transistor having active layer consisting of five component material and display device having the same |
KR102308188B1 (en) * | 2015-02-04 | 2021-10-01 | 삼성디스플레이 주식회사 | Liquid crystal display device |
US11489085B1 (en) * | 2021-07-26 | 2022-11-01 | Hannstouch Solution Incorporated | Light sensing device having offset gate electrode and light sensing panel using the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010050368A1 (en) * | 2000-06-09 | 2001-12-13 | Hong-Man Moon | Liquid crystal display device array substrate and method of manufacturing the same |
US6838696B2 (en) * | 2000-03-15 | 2005-01-04 | Advanced Display Inc. | Liquid crystal display |
US20050098781A1 (en) * | 2003-09-04 | 2005-05-12 | Myung-Jae Park | Thin film array panel |
US6933568B2 (en) * | 2002-05-17 | 2005-08-23 | Samsung Electronics Co., Ltd. | Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same |
US20060027819A1 (en) * | 2004-08-05 | 2006-02-09 | Au Optronics Corporation | Dual emitting method and device for active matrix organic electroluminescence |
US7235813B2 (en) * | 2003-08-04 | 2007-06-26 | Au Optronics Corporation | Thin film transistor and pixel structure thereof |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02285326A (en) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | Active matrix type liquid crystal display element |
US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
JP3002518B2 (en) * | 1990-10-17 | 2000-01-24 | 株式会社日立製作所 | Liquid crystal display |
KR960014823B1 (en) * | 1991-03-15 | 1996-10-21 | 가부시기가이샤 히다찌세이사구쇼 | Liquid crystal display device |
US6215541B1 (en) * | 1997-11-20 | 2001-04-10 | Samsung Electronics Co., Ltd. | Liquid crystal displays and manufacturing methods thereof |
KR100590742B1 (en) * | 1998-05-11 | 2007-04-25 | 삼성전자주식회사 | Manufacturing method of thin film transistor substrate for liquid crystal display device |
US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
CN1139837C (en) * | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | Film transistor array substrate for liquid crystal display and manufacture thereof |
KR100685914B1 (en) * | 2000-09-05 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | Multi domain liquid crystal display device and method for fabricating the same |
JP3668122B2 (en) * | 2000-11-07 | 2005-07-06 | 三洋電機株式会社 | Thin film transistor substrate and liquid crystal display device including the same |
EP1378015A4 (en) * | 2001-04-10 | 2005-08-03 | Sarnoff Corp | Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors |
US6583043B2 (en) * | 2001-07-27 | 2003-06-24 | Motorola, Inc. | Dielectric between metal structures and method therefor |
KR100740938B1 (en) | 2001-08-30 | 2007-07-19 | 삼성전자주식회사 | a thin film transistor array panel having a mark indication laser irradiation point |
WO2003036374A1 (en) | 2001-09-26 | 2003-05-01 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for liquid crystal display and method for manufacturing the same |
KR100391157B1 (en) * | 2001-10-25 | 2003-07-16 | 엘지.필립스 엘시디 주식회사 | array panel of liquid crystal display and manufacturing method thereof |
JP4211349B2 (en) * | 2002-10-09 | 2009-01-21 | セイコーエプソン株式会社 | Liquid crystal display element |
KR100892087B1 (en) * | 2002-10-28 | 2009-04-06 | 엘지디스플레이 주식회사 | Array substrate for In-Plane switching mode LCD and the method for fabricating the same |
KR100920348B1 (en) * | 2003-02-27 | 2009-10-07 | 삼성전자주식회사 | liquid crystal display |
JP2005134889A (en) * | 2003-10-01 | 2005-05-26 | Samsung Electronics Co Ltd | Thin film transistor display plate and liquid crystal display device containing the same |
-
2004
- 2004-11-03 KR KR1020040088812A patent/KR101061856B1/en active IP Right Grant
-
2005
- 2005-11-03 TW TW094138639A patent/TWI394280B/en active
- 2005-11-03 US US11/266,680 patent/US20060091389A1/en not_active Abandoned
- 2005-11-03 CN CNB2005101191685A patent/CN100517727C/en active Active
- 2005-11-04 JP JP2005321563A patent/JP5295483B2/en active Active
-
2008
- 2008-08-20 US US12/195,239 patent/US8247816B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838696B2 (en) * | 2000-03-15 | 2005-01-04 | Advanced Display Inc. | Liquid crystal display |
US20010050368A1 (en) * | 2000-06-09 | 2001-12-13 | Hong-Man Moon | Liquid crystal display device array substrate and method of manufacturing the same |
US6933568B2 (en) * | 2002-05-17 | 2005-08-23 | Samsung Electronics Co., Ltd. | Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same |
US7235813B2 (en) * | 2003-08-04 | 2007-06-26 | Au Optronics Corporation | Thin film transistor and pixel structure thereof |
US20050098781A1 (en) * | 2003-09-04 | 2005-05-12 | Myung-Jae Park | Thin film array panel |
US20060027819A1 (en) * | 2004-08-05 | 2006-02-09 | Au Optronics Corporation | Dual emitting method and device for active matrix organic electroluminescence |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014206762A (en) * | 2006-05-24 | 2014-10-30 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | Display substrate, method for manufacturing the same, and liquid crystal display device including the same |
US20090244416A1 (en) * | 2008-03-31 | 2009-10-01 | Au Optronics Corp. | Active Array Substrate, Electrode Substrate, and Liquid Crystal Display Panel |
US8411234B2 (en) | 2008-03-31 | 2013-04-02 | Au Optronics Corp. | Active array substrate, electrode substrate, and liquid crystal display panel capable of locating ions in a non-display region |
US20180108676A1 (en) * | 2016-03-30 | 2018-04-19 | Boe Technology Group Co., Ltd. | Array substrate, method of manufacturing the same, and display device |
US10147744B2 (en) * | 2016-03-30 | 2018-12-04 | Boe Technology Group Co., Ltd. | Array substrate, method of manufacturing the same, and display device |
US20210343959A1 (en) * | 2017-12-14 | 2021-11-04 | Samsung Display Co., Ltd. | Display apparatus and manufacturing method of the same |
Also Published As
Publication number | Publication date |
---|---|
CN1805147A (en) | 2006-07-19 |
KR20060039634A (en) | 2006-05-09 |
TW200629564A (en) | 2006-08-16 |
KR101061856B1 (en) | 2011-09-02 |
US8247816B2 (en) | 2012-08-21 |
CN100517727C (en) | 2009-07-22 |
JP5295483B2 (en) | 2013-09-18 |
US20080303025A1 (en) | 2008-12-11 |
JP2006135336A (en) | 2006-05-25 |
TWI394280B (en) | 2013-04-21 |
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