US20060099769A1 - Method for forming capacitor of semiconductor device - Google Patents

Method for forming capacitor of semiconductor device Download PDF

Info

Publication number
US20060099769A1
US20060099769A1 US11/122,834 US12283405A US2006099769A1 US 20060099769 A1 US20060099769 A1 US 20060099769A1 US 12283405 A US12283405 A US 12283405A US 2006099769 A1 US2006099769 A1 US 2006099769A1
Authority
US
United States
Prior art keywords
hfo2
hfxalyoz
film
deposited
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US11/122,834
Other versions
US7037801B1 (en
Inventor
Kwon Hong
Deok Kil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Assigned to HYNIX SEMICONDUCTOR INC. reassignment HYNIX SEMICONDUCTOR INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HONG, KWON, KIL, DEOK SIN
Application granted granted Critical
Publication of US7037801B1 publication Critical patent/US7037801B1/en
Publication of US20060099769A1 publication Critical patent/US20060099769A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H01L21/3142—Deposition using atomic layer deposition techniques [ALD] of nano-laminates, e.g. alternating layers of Al203-Hf02
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Definitions

  • the present invention relates generally to a method for forming a capacitor of a semiconductor device, and more particularly to a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic of HfO2 applied as a dielectric film of the capacitor by suppressing low-temperature crystallization thereof.
  • the charging capacity of a capacitor is proportional to an area of an electrode and a dielectric constant of a dielectric film, and is inversely proportional to a distance between electrodes, that is, a thickness of the dielectric film. For ensuring charging capacity required, therefore, it is necessary to reduce the thickness of the dielectric film or to apply materials having a large dielectric constant as the dielectric film.
  • the dual dielectric film of HfO2/Al2O3 also has a limitation on reducing an equivalent oxide thickness (EOT; Tox) due to the small dielectric constant of Al2O3.
  • the single dielectric film structure of Al2O3 or HfO2 and the dual dielectric film structure of HfO2/Al2O3 may ensure charging capacity required for a capacitor of a highly integrated device such as a 65 nm-grade device, but cannot satisfy the leakage current characteristic of the capacitor. Consequently, the development of a dielectric film applicable to the 65 nm-grade device must be settled without delay.
  • an object of the present invention is to provide a method for forming a capacitor of a semiconductor device, in which HfO2 is applied as a dielectric film of the capacitor while increase of a leakage current due to a low crystallization temperature of HfO2 can be prevented.
  • a further object of the present invention is to provide a method for forming a capacitor of a semiconductor device, in which not only desired charging capacity can be secured by applying HfO2 as a dielectric film of the capacitor, but also an excellent leakage current characteristic can be ensured.
  • a method for forming a capacitor of semiconductor device comprising the steps of: forming a storage electrode consisting of TiN on a semiconductor substrate; successively depositing a first HfO2 thin film, an HfxAlyOz thin film and a second HfO2 thin film on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film; and forming a plate electrode consisting of TiN on the HfO2/HfxAlyOz/HfO2 dielectric film.
  • ALD Atomic layer Deposition
  • the storage electrode and the plate electrode are deposited with a thickness of 50 to 300 ⁇ , respectively.
  • first and second HfO2 thin films are deposited with a thickness of 30 to 80 ⁇ , respectively.
  • the HfxAlyOz thin film is deposited with a thickness of 5 to 15 ⁇ , and is deposited by performing a first deposition cycle, in which Hf source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, and a second deposition cycle, in which Al source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, in the ratio of 1:1 to 9:1.
  • the above-mentioned objects are achieved by providing a method for forming a capacitor of a semiconductor device, the method comprising the steps of: forming a storage electrode consisting of TiN on a semiconductor substrate; successively depositing a first HfxAlyOz thin film, an HfO2 thin film and a second HfxAlyOz thin film on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfxAlyOz/HfO2/HfxAlyOz dielectric film; and forming a plate electrode consisting of TiN on the HfxAlyOz/HfO2/HfxAlyOz dielectric film.
  • ALD Atomic layer Deposition
  • the storage electrode and the plate electrode are deposited with a thickness of 50 to 300 ⁇ , respectively.
  • the HfO2 thin film is deposited with a thickness of 20 to 60 ⁇ .
  • the first and second HfxAlyOz thin films are deposited with a thickness of 5 to 15 ⁇ , respectively.
  • FIGS. 1 a to 1 c are process-by-process sectional views for explaining a method for forming a capacitor in accordance with a preferred embodiment of the present invention.
  • FIG. 2 is a sectional view of a capacitor formed by a forming method in accordance with another preferred embodiment of the present invention.
  • a dielectric film of the capacitor essentially consists of HfO2.
  • an HfxAlyOz thin film having a larger dielectric constant than that of Al2O3 is interposed between HfO2 thin films during the deposition of the HfO2 thin films to form the dielectric film in a triple structure of HfO2/HfxAlyOz/HfO2.
  • the dielectric film of the present invention can reduce an equivalent oxide thickness (Tox) more than in the conventional dual dielectric film structure and thus ensure charging capacity required.
  • Tox equivalent oxide thickness
  • the dielectric film of the present invention can improve the problem of a leakage current caused by a low crystallization temperature when HfO2 is used as the dielectric film.
  • the HfO2/HfxAlyOz/HfO2 dielectric film according to the present invention makes it possible to manufacture a capacitor which has charging capacity and a leakage characteristic required for a 65 nm-grade device.
  • FIGS. 1 a to 1 c illustrate process-by-process sectional views for explaining a method for forming a capacitor of a semiconductor device in accordance with a preferred embodiment of the present invention, for which a description will be given below in detail.
  • TiN is deposited on a semiconductor device 11 , which is formed with sub patterns including transistors and bit lines, to form a storage electrode 12 consisting of TiN.
  • TiN is deposited with a thickness of 50 to 300 ⁇ according to an Atomic layer Deposition (ALD) technique or a Chemical Vapor Deposition (CVD) technique.
  • ALD Atomic layer Deposition
  • CVD Chemical Vapor Deposition
  • FIG. 1 represents that the storage electrode 12 has a simple flat plate-like structure, the storage electrode 12 may be formed in a three-dimensional structure such as a concave structure and a cylindrical structure.
  • a first HfO2 thin film 13 a , an HfxAlyOz thin film 13 b and a second HfO2 thin film 13 c are successively deposited on the storage electrode 12 to form an HfO2/HfxAlyOz/HfO2 dielectric film 13 .
  • each of the first and second HfO2 thin films 13 a , 13 c is deposited by repeatedly performing a deposition cycle, in which Hf source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, according to an ALD technique until its desired thickness is obtained.
  • the HfxAlyOz thin film 13 b is deposited by repeatedly performing a first deposition cycle, in which Hf source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, and a second deposition cycle, in which Al source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, the number of times desired for each cycle.
  • the first and second HfO2 thin films 13 a , 13 c are deposited with a thickness of 30 to 80 ⁇ , respectively.
  • the HfxAlyOz thin film 13 b is deposited with a thickness of 5 to 15 ⁇ by performing the first and second deposition cycles in the ratio of 1:1 to 9:1.
  • TiN having a thickness of 20 to 300 ⁇ is deposited on the HfO2/HfxAlyOz/HfO2 dielectric film 13 according to an ALD or CVD technique. In this way, the formation of an MIM structure capacitor 10 in accordance with the present invention is completed.
  • the HfxAlyOz thin film is interposed between the HfO2 thin films, a large dielectric constant of HfO2 can be utilized to the maximum extent possible and thus desired charging capacity can be ensured.
  • the HfxAlyOz thin film suppresses low-temperature crystallization of HfO2, so that a leakage current characteristic of the capacitor can be improved.
  • the dielectric film is formed in a triple structure of HfO2/HfxAlyOz/HfO2.
  • a first HfxAlyOz thin film 23 a and a second HfxAlyOz thin film 23 c are deposited before and after the deposition of a HfO2 thin film 23 b , that is, the first HfxAlyOz thin film 23 a , the HfO2 thin film and the second HfxAlyOz thin film 23 c are successively deposited to form a dielectric film 23 in a triple structure of HfxAlyOz/HfO2/HfxAlyOz as shown in FIG. 2 illustrating another preferred embodiment of the present invention, a capacitor 20 having the same characteristics as those of the capacitor according to the above-mentioned embodiment can be manufactured.
  • unexplained reference numerals ‘21’, ‘ 22 ’ and ‘ 24 ’ designate the semiconductor substrate, the TiN storage electrode and the TiN plate electrode, respectively.
  • HfO2 is used as a dielectric film while an HfxAlyOz thin film is used for complementing a leakage current problem due to a low crystallization temperature of HfO2, so that an excellent leakage current characteristic and large charging capacity can be obtained even when the capacitor has a small physical thickness. Consequently, it is possible to realize a capacitor applicable to a 65 nm-grade device, which has a dielectric film with a small equivalent oxide thickness and a low leakage current.

Abstract

Disclosed is a method for forming a capacitor of a semiconductor device, which can ensure charging capacity required as well as an excellent leakage current characteristic. In such a method, a storage electrode consisting of TiN is formed on a semiconductor substrate. Then, a first HfO2 thin film, an HfxAlyOz thin film and a second HfO2 thin film are successively deposited on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film. Finally, a plate electrode consisting of TiN is formed on the HfO2/HfxAlyOz/HfO2 dielectric film.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates generally to a method for forming a capacitor of a semiconductor device, and more particularly to a method for forming a capacitor of a semiconductor device, which can improve a leakage current characteristic of HfO2 applied as a dielectric film of the capacitor by suppressing low-temperature crystallization thereof.
  • 2. Description of the Prior Art
  • Recently, cells of a DRAM device has occupied a smaller area with increase in a degree of integration of the DRAM device, so it becomes more and more difficult to ensure charging capacity required. As is well known in the art, the charging capacity of a capacitor is proportional to an area of an electrode and a dielectric constant of a dielectric film, and is inversely proportional to a distance between electrodes, that is, a thickness of the dielectric film. For ensuring charging capacity required, therefore, it is necessary to reduce the thickness of the dielectric film or to apply materials having a large dielectric constant as the dielectric film.
  • Thereupon, in order to ensure charging capacity required, researches are being vigorously pursued to replace the existing Oxide-Nitride-Oxide (ONO) dielectric film by a single dielectric film of Al2O3 (ε=9), a single dielectric film of HfO2 (ε=20) or a dual dielectric film of simply laminated HfO2/Al2O3.
  • However, Al2O3 has a restriction on ensuring charging capacity because its dielectric constant is not so different from that of the existing Si3N4 material (ε=7), and HfO2 has a poor leakage current characteristic caused by a low crystallization temperature although it has a large dielectric constant. The dual dielectric film of HfO2/Al2O3 also has a limitation on reducing an equivalent oxide thickness (EOT; Tox) due to the small dielectric constant of Al2O3.
  • In the end, the single dielectric film structure of Al2O3 or HfO2 and the dual dielectric film structure of HfO2/Al2O3 may ensure charging capacity required for a capacitor of a highly integrated device such as a 65 nm-grade device, but cannot satisfy the leakage current characteristic of the capacitor. Consequently, the development of a dielectric film applicable to the 65 nm-grade device must be settled without delay.
    • SUMMARY OF THE INVENTION
  • Accordingly, the present invention has been made to solve the above-mentioned problem occurring in the prior art, and an object of the present invention is to provide a method for forming a capacitor of a semiconductor device, in which HfO2 is applied as a dielectric film of the capacitor while increase of a leakage current due to a low crystallization temperature of HfO2 can be prevented.
  • A further object of the present invention is to provide a method for forming a capacitor of a semiconductor device, in which not only desired charging capacity can be secured by applying HfO2 as a dielectric film of the capacitor, but also an excellent leakage current characteristic can be ensured.
  • In order to accomplish these objects, there is provided a method for forming a capacitor of semiconductor device in accordance with one aspect of the present invention, the method comprising the steps of: forming a storage electrode consisting of TiN on a semiconductor substrate; successively depositing a first HfO2 thin film, an HfxAlyOz thin film and a second HfO2 thin film on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film; and forming a plate electrode consisting of TiN on the HfO2/HfxAlyOz/HfO2 dielectric film.
  • Here, the storage electrode and the plate electrode are deposited with a thickness of 50 to 300 Å, respectively.
  • Also, the first and second HfO2 thin films are deposited with a thickness of 30 to 80 Å, respectively.
  • The HfxAlyOz thin film is deposited with a thickness of 5 to 15 Å, and is deposited by performing a first deposition cycle, in which Hf source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, and a second deposition cycle, in which Al source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, in the ratio of 1:1 to 9:1.
  • In accordance with another aspect of the present invention, the above-mentioned objects are achieved by providing a method for forming a capacitor of a semiconductor device, the method comprising the steps of: forming a storage electrode consisting of TiN on a semiconductor substrate; successively depositing a first HfxAlyOz thin film, an HfO2 thin film and a second HfxAlyOz thin film on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfxAlyOz/HfO2/HfxAlyOz dielectric film; and forming a plate electrode consisting of TiN on the HfxAlyOz/HfO2/HfxAlyOz dielectric film.
  • Here, the storage electrode and the plate electrode are deposited with a thickness of 50 to 300 Å, respectively.
  • Also, the HfO2 thin film is deposited with a thickness of 20 to 60 Å.
  • The first and second HfxAlyOz thin films are deposited with a thickness of 5 to 15 Å, respectively.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:
  • FIGS. 1 a to 1 c are process-by-process sectional views for explaining a method for forming a capacitor in accordance with a preferred embodiment of the present invention; and
  • FIG. 2 is a sectional view of a capacitor formed by a forming method in accordance with another preferred embodiment of the present invention.
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the following description and drawings, the same reference numerals are used to designate the same or similar components, and so repetition of the description on the same or similar components will be omitted.
  • In a method for forming a capacitor of a semiconductor device according to the present invention, a dielectric film of the capacitor essentially consists of HfO2. However, in contrast with a conventional single or dual dielectric film, an HfxAlyOz thin film having a larger dielectric constant than that of Al2O3 is interposed between HfO2 thin films during the deposition of the HfO2 thin films to form the dielectric film in a triple structure of HfO2/HfxAlyOz/HfO2.
  • In connection with interposing the HfxAlyOz thin film dielectric constant of which is larger than that of Al2O3 between the HfO2 thin films, the dielectric film of the present invention can reduce an equivalent oxide thickness (Tox) more than in the conventional dual dielectric film structure and thus ensure charging capacity required. In particular, since the HfxAlyOz thin film suppresses the crystallization of HfO2, the dielectric film of the present invention can improve the problem of a leakage current caused by a low crystallization temperature when HfO2 is used as the dielectric film.
  • Accordingly, the HfO2/HfxAlyOz/HfO2 dielectric film according to the present invention makes it possible to manufacture a capacitor which has charging capacity and a leakage characteristic required for a 65 nm-grade device.
  • FIGS. 1 a to 1 c illustrate process-by-process sectional views for explaining a method for forming a capacitor of a semiconductor device in accordance with a preferred embodiment of the present invention, for which a description will be given below in detail.
  • Referring to FIG. 1 a, TiN is deposited on a semiconductor device 11, which is formed with sub patterns including transistors and bit lines, to form a storage electrode 12 consisting of TiN. At this time, TiN is deposited with a thickness of 50 to 300 Å according to an Atomic layer Deposition (ALD) technique or a Chemical Vapor Deposition (CVD) technique. Although FIG. 1 represents that the storage electrode 12 has a simple flat plate-like structure, the storage electrode 12 may be formed in a three-dimensional structure such as a concave structure and a cylindrical structure.
  • Referring to FIG. 1 b, a first HfO2 thin film 13 a, an HfxAlyOz thin film 13 b and a second HfO2 thin film 13 c are successively deposited on the storage electrode 12 to form an HfO2/HfxAlyOz/HfO2 dielectric film 13. At this time, each of the first and second HfO2 thin films 13 a, 13 c is deposited by repeatedly performing a deposition cycle, in which Hf source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, according to an ALD technique until its desired thickness is obtained. The HfxAlyOz thin film 13 b is deposited by repeatedly performing a first deposition cycle, in which Hf source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, and a second deposition cycle, in which Al source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, the number of times desired for each cycle. For example, the first and second HfO2 thin films 13 a, 13 c are deposited with a thickness of 30 to 80 Å, respectively. The HfxAlyOz thin film 13 b is deposited with a thickness of 5 to 15 Å by performing the first and second deposition cycles in the ratio of 1:1 to 9:1.
  • Referring to FIG. 1 c, TiN having a thickness of 20 to 300 Å is deposited on the HfO2/HfxAlyOz/HfO2 dielectric film 13 according to an ALD or CVD technique. In this way, the formation of an MIM structure capacitor 10 in accordance with the present invention is completed.
  • In the so-formed capacitor of the present invention, since the HfxAlyOz thin film is interposed between the HfO2 thin films, a large dielectric constant of HfO2 can be utilized to the maximum extent possible and thus desired charging capacity can be ensured. In addition, the HfxAlyOz thin film suppresses low-temperature crystallization of HfO2, so that a leakage current characteristic of the capacitor can be improved.
  • In the above-mentioned embodiment, the dielectric film is formed in a triple structure of HfO2/HfxAlyOz/HfO2. In contrast with this embodiment, when a first HfxAlyOz thin film 23 a and a second HfxAlyOz thin film 23 c are deposited before and after the deposition of a HfO2 thin film 23 b, that is, the first HfxAlyOz thin film 23 a, the HfO2 thin film and the second HfxAlyOz thin film 23 c are successively deposited to form a dielectric film 23 in a triple structure of HfxAlyOz/HfO2/HfxAlyOz as shown in FIG. 2 illustrating another preferred embodiment of the present invention, a capacitor 20 having the same characteristics as those of the capacitor according to the above-mentioned embodiment can be manufactured.
  • In FIG. 2, unexplained reference numerals ‘21’, ‘22’ and ‘24’ designate the semiconductor substrate, the TiN storage electrode and the TiN plate electrode, respectively.
  • As described above, in the method for forming a capacitor according to the present invention, HfO2 is used as a dielectric film while an HfxAlyOz thin film is used for complementing a leakage current problem due to a low crystallization temperature of HfO2, so that an excellent leakage current characteristic and large charging capacity can be obtained even when the capacitor has a small physical thickness. Consequently, it is possible to realize a capacitor applicable to a 65 nm-grade device, which has a dielectric film with a small equivalent oxide thickness and a low leakage current.
  • Although preferred embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims (9)

1. A method for forming a capacitor of semiconductor device, the method comprising the steps of:
forming a storage electrode consisting of TiN on a semiconductor substrate;
successively depositing on the storage electrode a first HfO2 film, an HfxAlyOz film wherein each of x, v, and z is greater than zero, and a second HfO2 film using Atomic layer Deposition ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film; and
forming a plate electrode consisting of TIN on the HfO2/HfxAlyOz/HfO2 dielectric film.
2. The method as claimed in claim 1, wherein the storage electrode and the plate electrode are deposited with a thickness of 50 to 300 Å, respectively.
3. The method as claimed in claim 1, wherein the first and second HfO2 films are deposited with a thickness of 30 to 80 Å, respectively.
4. The method as claimed in claim 1, wherein the HfxAlyOz film is deposited with a thickness of 5 to 15 Å.
5. The method as claimed in claim 1 or 4, wherein the HfxAlyOz film and is deposited by performing a first deposition cycle, in which Hf source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, and a second deposition cycle, in which Al source gas flowing, N2 purging, O3 gas flowing and N2 purging progress successively, in the ration of 1:1 to 9:1.
6. A method for forming a capacitor of a semiconductor device, the method comprising the steps of:
forming a storage electrode consisting of TiN on a semiconductor substrate;
successively depositing on the storage electrode a first HfxAlyOz film wherein each of x, v, and z is greater than zero, an HfO2 film, and a second HfxAlyOz film wherein each of x, v, and z is greater than zero En using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film; and
forming a plate electrode consisting of TiN on the HfO21 HfxAlyOz/HfO2 dielectric film.
7. The method as claimed in claim 6, wherein the storage electrode and the plate electrode are deposited with a thickness of 50 to 300 Å, respectively.
8. The method as claimed in claim 6, wherein the HfO2 film is deposited with a thickness of 20 to 60 Å.
9. The method as claimed in claim 6, wherein the first and second HfxAlyOz films are deposited with a thickness of 5 to 15 Å, respectively.
US11/122,834 2004-11-08 2005-05-05 Method for forming capacitor of semiconductor device Active US7037801B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040090413A KR100575887B1 (en) 2004-11-08 2004-11-08 Method for forming capacitor of semiconductor device
KR10-2004-0090413 2004-11-08

Publications (2)

Publication Number Publication Date
US7037801B1 US7037801B1 (en) 2006-05-02
US20060099769A1 true US20060099769A1 (en) 2006-05-11

Family

ID=36216002

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/122,834 Active US7037801B1 (en) 2004-11-08 2005-05-05 Method for forming capacitor of semiconductor device

Country Status (2)

Country Link
US (1) US7037801B1 (en)
KR (1) KR100575887B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070066012A1 (en) * 2005-09-16 2007-03-22 Takashi Ohtsuka Semiconductor device and method for fabricating the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122422B2 (en) * 2004-07-20 2006-10-17 Micron Technology, Inc. Methods of forming capacitors
US10388721B2 (en) 2017-01-24 2019-08-20 International Business Machines Corporation Conformal capacitor structure formed by a single process

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250786A (en) * 1990-09-27 1993-10-05 Sawafuji Electric Co., Ltd. D-C arc welding apparatus
US5365576A (en) * 1991-02-27 1994-11-15 Ricos Co., Ltd. Data and speech transmission device
US5483352A (en) * 1992-08-27 1996-01-09 Fujitsu Limited Computer able to link electronic mail functions with telephone functions
US5937390A (en) * 1995-09-14 1999-08-10 Fujitsu Limited On-line advertising system and its method
US20020086507A1 (en) * 2000-12-29 2002-07-04 Park Dae Gyu Method of forming a metal gate in a semiconductor device
US20030205750A1 (en) * 2002-03-06 2003-11-06 Cem Basceri Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
US20030213987A1 (en) * 2002-05-16 2003-11-20 Cem Basceri MIS capacitor and method of formation
US6696332B2 (en) * 2001-12-26 2004-02-24 Texas Instruments Incorporated Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
US20050142715A1 (en) * 2003-12-26 2005-06-30 Fujitsu Limited Semiconductor device with high dielectric constant insulator and its manufacture
US20050260357A1 (en) * 2004-05-21 2005-11-24 Applied Materials, Inc. Stabilization of high-k dielectric materials

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
KR20040055458A (en) * 2002-12-21 2004-06-26 주식회사 하이닉스반도체 Method of forming insulating thin film for semiconductor device
KR101159070B1 (en) * 2003-03-11 2012-06-25 삼성전자주식회사 Method for manufacturing oxide film having high dielectric constant, capacitor comprising dielectric film formed by the method and method for manufacturing the same

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250786A (en) * 1990-09-27 1993-10-05 Sawafuji Electric Co., Ltd. D-C arc welding apparatus
US5365576A (en) * 1991-02-27 1994-11-15 Ricos Co., Ltd. Data and speech transmission device
US5483352A (en) * 1992-08-27 1996-01-09 Fujitsu Limited Computer able to link electronic mail functions with telephone functions
US5937390A (en) * 1995-09-14 1999-08-10 Fujitsu Limited On-line advertising system and its method
US20020086507A1 (en) * 2000-12-29 2002-07-04 Park Dae Gyu Method of forming a metal gate in a semiconductor device
US6696332B2 (en) * 2001-12-26 2004-02-24 Texas Instruments Incorporated Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
US20050020026A1 (en) * 2002-03-06 2005-01-27 Cem Basceri Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
US20030205750A1 (en) * 2002-03-06 2003-11-06 Cem Basceri Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
US20030222300A1 (en) * 2002-03-06 2003-12-04 Micron Technology, Inc. Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
US6900106B2 (en) * 2002-03-06 2005-05-31 Micron Technology, Inc. Methods of forming capacitor constructions
US20030213987A1 (en) * 2002-05-16 2003-11-20 Cem Basceri MIS capacitor and method of formation
US20040046197A1 (en) * 2002-05-16 2004-03-11 Cem Basceri MIS capacitor and method of formation
US20050142715A1 (en) * 2003-12-26 2005-06-30 Fujitsu Limited Semiconductor device with high dielectric constant insulator and its manufacture
US20050260357A1 (en) * 2004-05-21 2005-11-24 Applied Materials, Inc. Stabilization of high-k dielectric materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070066012A1 (en) * 2005-09-16 2007-03-22 Takashi Ohtsuka Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
US7037801B1 (en) 2006-05-02
KR100575887B1 (en) 2006-05-03

Similar Documents

Publication Publication Date Title
US7616426B2 (en) Capacitor and method for fabricating the same
US7297591B2 (en) Method for manufacturing capacitor of semiconductor device
US6812101B2 (en) Semiconductor device and method for manufacture thereof
KR101599724B1 (en) Semiconductor device and fabficating method the sameof
US7491654B2 (en) Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film
US20030124794A1 (en) Electronic component incorporating an integrated circuit and planar microcapacitor
US20010051444A1 (en) Method for manufacturing aluminum oxide film for use in semiconductor device
JP2001267566A (en) Multilayered dielectric stack and its method
JP2000124424A (en) Forming method of capacitor dielectric film irregular in thickness
US11171141B2 (en) Gap fill methods of forming buried word lines in DRAM without forming bottom voids
US20040087081A1 (en) Capacitor fabrication methods and capacitor structures including niobium oxide
US7037801B1 (en) Method for forming capacitor of semiconductor device
US7456064B2 (en) High K dielectric material and method of making a high K dielectric material
US7379322B2 (en) Amorphous high-k thin film and manufacturing method thereof
TWI231596B (en) Method for fabricating capacitor in semiconductor device
US7259059B2 (en) Method for forming capacitor of semiconductor device
JP2000196035A (en) Manufacture of capacitor of memory device
US20060145233A1 (en) Method of fabricating a semiconductor device capacitor having a dielectric barrier layer and a semiconductor device capacitor having the same
US20020149011A1 (en) Semiconductor component and corresponding fabrication method
KR100631950B1 (en) Method for forming capacitor of semiconductor device
US7501191B2 (en) Amorphous dielectric thin film and manufacturing method thereof
KR20050050003A (en) Method of forming a dielectric layer incorporating carbon impurities using an atomic layer deposition technique
KR20050019304A (en) Semiconductor capacitor and manufacutring method therefor
US20070040287A1 (en) Method for forming capacitor in a semiconductor device
KR100573836B1 (en) Fabricating method for capacitor in semiconductor device

Legal Events

Date Code Title Description
AS Assignment

Owner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HONG, KWON;KIL, DEOK SIN;REEL/FRAME:016535/0403

Effective date: 20050406

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12