US20060105182A1 - Erosion resistant textured chamber surface - Google Patents
Erosion resistant textured chamber surface Download PDFInfo
- Publication number
- US20060105182A1 US20060105182A1 US10/989,975 US98997504A US2006105182A1 US 20060105182 A1 US20060105182 A1 US 20060105182A1 US 98997504 A US98997504 A US 98997504A US 2006105182 A1 US2006105182 A1 US 2006105182A1
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- micrometers
- component
- electron beam
- metal coating
- chamber
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01J37/32871—Means for trapping or directing unwanted particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- a substrate In the processing of substrates such as semiconductor wafers and displays, a substrate is placed in a process chamber and exposed to an energized gas to deposit or etch material on the substrate.
- process residues are generated and can deposit on internal surfaces in the chamber.
- material sputtered from a target for deposition on a substrate also deposits on other component surfaces in the chamber, such as on deposition rings, shadow rings, wall liners, and focus rings.
- the deposited process residues can “flake off” of the chamber surfaces to fall upon and contaminate the substrate.
- the surfaces of components in the chamber can be textured. Process residues adhere to the textured surface and inhibit the process residues from falling off and contaminating the substrates in the chamber.
- the textured component surface is formed by directing an electromagnetic energy beam onto a surface of a process chamber component surface to form depressions and protrusions to which process deposits adhere.
- a surface is a LavacoatTM surface, as described for example in U.S. Patent Publication No. 2003-0173526 to Popiolkowski et al, published on Sep. 18, 2003, and filed on Mar. 13, 2002; and U.S. Patent Publication No. 2004-0056211 to Popiolkowski et al, published on Mar. 25, 2004, and filed on Jul. 17, 2003—both commonly assigned to Applied Materials, Inc, and both of which are incorporated herein by reference in their entireties.
- the LavacoatTM surface comprises depressions and protrusions to which process residues can adhere to reduce the contamination of substrates during their processing.
- While components having textured surfaces provide improved residue adherence over other types of process components, performance issues can arise when the components are cleaned to remove accumulated process residues.
- the component comprising the textured surface is immersed in a cleaning solution, such as an acidic solution.
- cleaning solutions that are capable of cleaning process residues can also erode the textured surface to alter the surface features, and consequently, reduce the adherence of process residues thereto.
- textured component surfaces comprising aluminum and titanium can be eroded by an acidic solution of HNO 3 and HF—which is used to remove tantalum-containing process residues from the component surfaces. Because the eroded surfaces can exhibit poor residue adhesion, the components may require replacement or refurbishment after only a few cleaning cycles, thereby increasing substrate processing costs and chamber downtime.
- a component comprising a textured surface that provides good adherence of process residues, to improve processing results and reduce contamination of substrates. It is further desirable to be able to effectively clean accumulated process residues from the component surface without erosion of the residues during cleaning. It is further desirable to have a method of fabricating a component having a textured surface that has improved erosion resistance during cleaning processes and provides good results in the processing of substrates.
- a component for a substrate processing chamber has a structure having an overlying metal coating.
- the metal coating has a plurality of electron beam textured features that are formed by scanning an electron beam across a surface of the metal coating.
- the textured features include a plurality of depressions and protuberances that are capable of accumulating process deposits during processing of a substrate to reduce contamination of the substrate.
- the component having the metal coating provides improved processing results, and exhibits reduced erosion during cleaning processes performed to remove process deposits from the component.
- a process kit for a substrate processing chamber has a ring adapted to at least partially surround a substrate in the processing chamber.
- the ring is of a metallic material, and has a stainless steel coating.
- the stainless steel coating has electron beam textured features thereon, the electron beam textured features having a plurality of depressions and protuberances.
- the process kit provides improved erosion resistance in the substrate processing chamber.
- a process chamber shield for a substrate processing chamber has a shield structure that is adapted to at least partially shield a process chamber wall.
- the shield structure is of a metallic material, and has a stainless steel coating.
- the stainless steel coating has electron beam textured features thereon, the electron beam textured features having a plurality of depressions and protuberances.
- the process chamber shield provides improved erosion resistance in the substrate processing chamber.
- a method of fabricating a component for a substrate processing chamber includes providing a component structure and forming a metal coating on the component structure. An electron beam is scanned across a surface of the metal coating to form a plurality of textured features including depressions and protuberances on the surface.
- the metal coating can be formed by at least partially melting a coating material and propelling the coating material onto the component structure.
- FIG. 1 a is a sectional side view of a component having a metal coating and a textured surface formed by scanning an electromagnetic energy beam across the layer;
- FIG. 1 b is a sectional top view of an embodiment of the component of FIG. 1 a;
- FIG. 2 is a sectional side view of an embodiment of a substrate processing chamber having one or more components comprising electron beam textured features on a metal coating.
- a process chamber component 22 having a textured surface 20 is provided for the processing of substrates in an energized gas in a process chamber 106 , as shown for example in FIGS. 1 a and 1 b.
- the component 22 having the textured surface reduces particle generation in the process chamber 106 by providing a “sticky” surface to which process deposits 24 adhere, thus allowing the deposits 24 to accumulate on the textured surface 20 .
- Process deposits 24 that adhere to the textured surface 20 can include metal-containing deposits, such as deposits comprising at least one of tantalum, tantalum nitride, titanium, titanium nitride, aluminum, copper, tungsten, and tungsten nitride.
- the chamber components 22 having the textured surface 20 can comprise, for example, a portion of a gas delivery system 112 that provides process gas in the chamber 106 , a substrate support 114 that supports the substrate 104 a in the chamber 106 , a process kit 139 , a gas energizer 116 that energizes the process gas, chamber enclosure walls 118 and shields 120 , or a gas exhaust 122 that exhausts gas from the chamber 106 .
- components 22 having the textured surface 20 can include a chamber enclosure wall 118 , a chamber shield 120 , a target 124 , a target rim 125 , a component of a process kit 139 such as at least one of a cover ring 126 and a deposition ring 128 , a support ring 130 , insulator ring 132 , a coil 135 , coil support 137 , shutter disk 104 b , clamp shield 141 , and a portion of the substrate support 114 .
- a process kit 139 such as at least one of a cover ring 126 and a deposition ring 128 , a support ring 130 , insulator ring 132 , a coil 135 , coil support 137 , shutter disk 104 b , clamp shield 141 , and a portion of the substrate support 114 .
- components having the textured surface can include Applied Material's part numbers 0020-50007, 0020-50008, 0020-50010, 0020-50012, 0020-50013, 0020-48908, 0021-23852, 0020-48998, 0020-52149, 0020-51483, 0020-49977, 0020-52151, 0020-48999, 0020-48042 and 0190-14818, from Applied Materials, Santa Clara, Calif.
- This list of components is merely exemplary and the other components or components from other types of chambers can also have the textured surface, thus, the present invention should not be limited to the components listed or described herein.
- one or more process chamber components 22 comprise a surface that is textured by scanning an electromagnetic energy beam 40 such as an electron beam 40 across the surface 20 , to form electron beam textured features 25 on the surface.
- An example of such a textured surface 20 is that formed by a LavacoatTM process, as described for example in U.S. patent application Ser. No. 10/653,713 to West, et al, filed on Sep. 2, 2003, entitled “Fabricating and Cleaning Chamber Components Having Textured Surfaces,” and aforementioned U.S. Patent Publication Nos. 2003/0173526 and 2004/0056211, all commonly assigned to Applied Materials, Inc., and all of which are incorporated herein by reference in their entireties.
- the electron beam textured features 25 of the LavacoatTM process comprise a plurality of depressions 23 and protuberances 26 to which process deposits 24 generated during processing can adhere, as shown for example in FIG. 1 a.
- the LavacoatTM textured surface 20 can be formed by generating an electromagnetic energy beam 40 , such as an electron beam 40 , and directing the beam onto the surface 20 of the component 22 .
- the electromagnetic energy beam is preferably an electron beam, it can also comprise protons, neutrons and X-rays and the like.
- the beam 40 is typically focused on a region of the surface 20 for a period of time, during which time the beam 40 interacts with the surface 20 to form the textured features 25 on the surface 20 . It is believed that the beam 40 forms the features 25 by rapidly heating the region of the surface 20 , typically to a melting temperature of the surface material. At least a portion of the surface material may even be evaporated or ablated from the surface 20 by the rapid heating.
- the rapid heating causes some of the surface material to be ejected outwards, which forms depressions 23 in the regions the material was ejected from, and protuberances 26 in areas where the ejected material re-deposits.
- the beam 40 is scanned to a different region of the component surface 20 to form features in the new region.
- the electromagnetic energy beam 40 can be scanned across the surface 20 to form a desired pattern of textured features 25 on the surface 20 , such as a honeycomb-like structure of depressions 23 and protuberances 26 , as shown for example in FIG. 1 a.
- the features 25 formed by this method are typically macroscopically sized.
- the depressions 23 can have a depth d as measured from a base level 28 of the surface 20 of from about 20 micrometers to about 1600 micrometers.
- a surface diameter w of the depressions 23 may be from about 120 micrometers to about 2600 micrometers and even from about 200 micrometers to about 2300 micrometers.
- the protuberances 26 can comprise a height h above the base surface 28 of from about 50 micrometers to about 1600 micrometers, and even from about 100 micrometers to about 1200 micrometers.
- the LavacoatTM textured surface 20 can have an overall surface roughness average of from about 60 micrometers to about 100 micrometers, the roughness average of the surface 20 being defined as the mean of the absolute values of the displacements from the mean line of the features along the surface 20 .
- the textured surface 20 can also be further roughened after scanning with the electromagnetic energy beam 40 to provide different levels of texture on the surface 20 , as described for example in the patent applications to Popiolkowski et al. and West et al. that are incorporated by reference above.
- the surface 20 can be grit blasted by propelling grit particles towards the surface 20 with pressurized gas, or can be chemically roughened, to form a relatively fine texture overlying the macroscopically sized features 25 on the surface 20 .
- the roughened surface 20 improves the adhesion of process deposits 24 to reduce contamination of the processed substrates 104 a.
- the textured surface 20 can be formed on a metal coating 30 on the component 22 , as shown for example in FIG. 1 a.
- the metal coating 30 desirably comprises a material that is resistant to erosion by the energized gases provided to process a substrate 104 a or clean the process chamber 106 , and is also desirably resistant to erosion from cleaning solutions that may be used to clean the component 20 , such as acidic or basic cleaning solutions.
- the metal coating 30 can be formed on a surface 33 of an underlying structure 32 of the component 30 to protect the underlying structure 32 .
- the underlying structure 32 may comprise a first material having desired properties, such as desired thermal and mechanical properties, and the metal coating 30 may comprise a second material having higher erosion resistance than the first material.
- the metal coating 30 may also comprise a material that can be treated to provide a desired texture of the metal coating surface, such as for example a desired roughness or textured pattern on the surface 20 , that could not otherwise be desirably provided by the material of the underlying structure 32 .
- the material of the metal coating may be selected to allow for a finer or rougher texturing of the metal coating surface 20 .
- a suitable material for the metal coating 30 can be selected with respect to the substrate processing requirements to provide the desired properties, and can comprise for example at least one of stainless steel, copper, nickel, tantalum and titanium.
- a material having suitable properties for the underlying structure 32 may be a metallic material, such as for example at least one of titanium, stainless steel; copper, tantalum and aluminum; and can also comprise a ceramic material, such as at least one of aluminum oxide, aluminum nitride, and quartz.
- the underlying structure is selected according to desired properties such as desired thermal and mechanical properties.
- an underlying structure 32 comprising aluminum may be desirable because aluminum is typically a relatively cheap material having good thermal conductivity.
- An underlying structure 32 comprising stainless steel may provide good erosion resistance and thermal conductivity.
- An underlying structure 32 comprising titanium may provide a desired relatively low thermal coefficient of expansion.
- an underlying structure 32 comprising copper may provide good thermal conductivity as well as a relatively low thermal coefficient of expansion.
- Underlying structures 32 comprising a ceramic material, such as aluminum oxide, may provide a desired level of thermal insulation and/or thermal conductivity, and a desired relatively low thermal coefficient of expansion.
- a metal coating 30 comprising stainless steel is formed over an underlying structure 32 comprising aluminum or titanium, such as a process kit or shield structure, to provide a component 22 having a textured surface 20 with improved erosion resistance while maintaining the desired overall mechanical and thermal properties of the component 22 .
- a metal coating 30 comprising stainless steel is formed over an underlying structure 32 comprising aluminum oxide.
- the metal coating 30 can be providing by spraying a coating of material over the surface 33 of the underlying component structure 32 .
- Suitable spraying methods can include thermal spraying methods, such as for example at least one of HVOF (high velocity oxygen fuel), flame spraying, plasma spraying, twin wire or single wire arc spraying, welding methods such as TIG, and other thermal spraying methods, which are capable of forming well-bonded coatings.
- HVOF high velocity oxygen fuel
- flame spraying flame spraying
- plasma spraying twin wire or single wire arc spraying
- welding methods such as TIG
- TIG welding methods
- other thermal spraying methods which are capable of forming well-bonded coatings.
- the coating material in powder or wire form is heated to a molten or near-molten state, for example by a torch.
- a pressurized gas is used to propel the coating material onto the surface 33 of the underlying structure 32 .
- an HVOF spray gun ignites an oxygen-fuel mixture to heat and at least partially melt the coating material as it is propelled towards the structure surface 33 .
- a HVOF spray gun that may be suitable for forming the metal coating 30 is the HVOF spray gun available from Sulzer Metco Holding AG in Winterthur, Switzerland.
- the metal coating 30 can be formed by other methods, such as by electroplating metal coating material on the underlying structure 32 , or by a physical or chemical vapor deposition method.
- the metal coating 30 desirably comprises a thickness that is sufficiently high to provide good erosion resistance and allow for the formation of the textured features 25 on the surface 20 of the coating 30 .
- the metal coating 30 is desirably also sufficiently thin to provide good adhesion of the coating 30 to the underlying structure 32 to inhibit spalling or flaking of the coating 30 from the structure.
- a suitable thickness may be a thickness of the metal coating 30 may from about 120 micrometers to about 2600 micrometers, such as from about 500 micrometers to about 1300 micrometers.
- the metal coating 30 can be formed over substantially the entire surface 33 of the underlying structure 32 , or on selected portions of the structure surface 33 that are, for example, especially susceptible to erosion, or that tend to accumulate large quantities of process deposits 24 .
- the coating 30 can be textured, for example by scanning an electron beam 40 across the surface 20 of the coating 30 , to form the textured features 25 that are capable of collecting process deposits during the processing of substrates 104 a .
- the textured features 25 are desirably formed substantially entirely in the metal coating 30 , and substantially without exposing the underlying structure 32 , as shown for example in FIG. 1 a.
- the component 22 comprising the metal coating 30 having the textured surface 20 can be cleaned after processing a predetermined number of substrates 104 a to remove process deposits 24 that have accumulated on the textured surface 20 , such as tantalum-containing deposits.
- the textured surface 20 of the component 22 can be immersed in a cleaning solution, such as an acidic solution of 20% by weight HF and 80% by weight HNO 3 , to clean the process deposits 24 .
- a cleaning solution such as an acidic solution of 20% by weight HF and 80% by weight HNO 3
- Any exposed regions of the surface 33 of the underlying structure 32 that are not covered by the metal coating 30 can be masked with a protective material, such as a polyester-based material, to protect the regions from erosion by the cleaning solution.
- a protective material may be polyester tape (plater's tape) commercially available from 3MTM, United States.
- Other cleaning solutions and steps may also be provided, such as rinsing with de-ionized water, ultrasonicating, baking or immers
- the component 22 having the metal coating 30 with the textured surface 20 provides improved results over components 22 without the metal coating 30 .
- a component 22 having a metal coating 30 with an electron beam textured surface 20 that comprises stainless steel, and that is formed over an underlying structure 32 comprising aluminum or titanium can be cleaned in a cleaning solution comprising HF and HNO 3 and recycled for re-use in the process chamber 106 at least about 10 times, while continuing to provide good processing results in the chamber 106 .
- a component 22 without a metal coating 30 such as a component 22 consisting of aluminum and having an electron beam textured surface 20 , is typically capable of being cleaned and re-cycled for re-use in the process chamber 106 no more than about 3 times, before the erosion of the component 22 becomes too severe to provide good processing results.
- FIG. 2 An example of a suitable process chamber 106 having a component 22 with a metal coating 30 and electron beam textured features 25 and is shown in FIG. 2 .
- the chamber 106 can be a part of a multi-chamber platform (not shown) having a cluster of interconnected chambers connected by a robot arm mechanism that transfers substrates 104 a between the chambers 106 .
- the process chamber 106 comprises a sputter deposition chamber, also called a physical vapor deposition or PVD chamber, which is capable of sputter depositing material on a substrate 104 a , such as one or more of tantalum, tantalum nitride, titanium, titanium nitride, copper, tungsten, tungsten nitride and aluminum.
- the chamber 106 comprises enclosure walls 118 that enclose a process zone 109 , and that include sidewalls 164 , a bottom wall 166 , and a ceiling 168 .
- a support ring 130 can be arranged between the sidewalls 164 and ceiling 168 to support the ceiling 168 .
- Other chamber walls can include one or more shields 120 that shield the enclosure walls 118 from the sputtering environment.
- the chamber 106 comprises a substrate support 114 to support substrates 104 a in the sputter deposition chamber 106 .
- the substrate support 114 may be electrically floating or may comprise an electrode 170 that is biased by a power supply 172 , such as an RF power supply.
- the substrate support 114 can also support other wafers 104 such as a moveable shutter disk 104 b that can protect the upper surface 134 of the support 114 when the substrate 104 a is not present.
- the substrate 104 a is introduced into the chamber 106 through a substrate loading inlet (not shown) in a sidewall 164 of the chamber 106 and placed on the support 114 .
- the support 114 can be lifted or lowered by support lift bellows and a lift finger assembly (not shown) can be used to lift and lower the substrate onto the support 114 during transport of the substrate 104 a into and out of the chamber 106 .
- the support 114 may also comprise a process kit 139 one or more rings, such as a cover ring 126 and a deposition ring 128 , which cover at least a portion of the upper surface 134 of the support 114 to inhibit erosion of the support 114 .
- the deposition ring 128 at least partially surrounds the substrate 104 a to protect portions of the support 114 not covered by the substrate 104 a .
- the cover ring 126 encircles and covers at least a portion of the deposition ring 128 , and reduces the deposition of particles onto both the deposition ring 128 and the underlying support 114 .
- a process gas such as a sputtering gas
- a gas delivery system 112 that includes a process gas supply comprising one or more gas sources 174 that each feed a conduit 176 having a gas flow control valve 178 , such as a mass flow controller, to pass a set flow rate of the gas therethrough.
- the conduits 176 can feed the gases to a mixing manifold (not shown) in which the gases are mixed to from a desired process gas composition.
- the mixing manifold feeds a gas distributor 180 having one or more gas outlets 182 in the chamber 106 .
- the process gas may comprise a non-reactive gas, such as argon or xenon, which is capable of energetically impinging upon and sputtering material from a target.
- the process gas may also comprise a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, that are capable of reacting with the sputtered material to form a layer on the substrate 104 a .
- Spent process gas and byproducts are exhausted from the chamber 106 through an exhaust 122 which includes one or more exhaust ports 184 that receive spent process gas and pass the spent gas to an exhaust conduit 186 in which there is a throttle valve 188 to control the pressure of the gas in the chamber 106 .
- the exhaust conduit 186 feeds one or more exhaust pumps 190 .
- the pressure of the sputtering gas in the chamber 106 is set to sub-atmospheric levels.
- the sputtering chamber 106 further comprises a sputtering target 124 facing a surface 105 of the substrate 104 a , and comprising material to be sputtered onto the substrate 104 a , such as for example at least one of tantalum and tantalum nitride.
- the target 124 is electrically isolated from the chamber 106 by an annular insulator ring 132 , and is connected to a power supply 192 .
- the sputtering chamber 106 also has a shield 120 to protect a wall 118 of the chamber 106 from sputtered material.
- the shield 120 can comprise a wall-like cylindrical shape having upper and lower shield sections 120 a , 120 b that shield the upper and lower regions of the chamber 106 .
- the shield 120 has an upper section 120 a mounted to the support ring 130 and a lower section 120 b that is fitted to the cover ring 126 .
- a clamp shield 141 comprising a clamping ring can also be provided to clamp the upper and lower shield sections 120 a,b together.
- Alternative shield configurations such as inner and outer shields, can also be provided.
- one or more of the power supply 192 , target 124 , and shield 120 operate as a gas energizer 116 that is capable of energizing the sputtering gas to sputter material from the target 124 .
- the power supply 192 applies a bias voltage to the target 124 with respect to the shield 120 .
- the electric field generated in the chamber 106 from the applied voltage energizes the sputtering gas to form a plasma that energetically impinges upon and bombards the target 124 to sputter material off the target 124 and onto the substrate 104 a .
- the support 114 having the electrode 170 and support electrode power supply 172 may also operate as part of the gas energizer 116 by energizing and accelerating ionized material sputtered from the target 124 towards the substrate 104 a .
- a gas energizing coil 135 can be provided that is powered by a power supply 192 and that is positioned within the chamber 106 to provide enhanced energized gas characteristics, such as improved energized gas density.
- the gas energizing coil 135 can be supported by a coil support 137 that is attached to a shield 120 or other wall in the chamber 106 .
- the chamber 106 can be controlled by a controller 194 that comprises program code having instruction sets to operate components of the chamber 106 to process substrates 104 a in the chamber 106 .
- the controller 194 can comprise a substrate positioning instruction set to operate one or more of the substrate support 114 and substrate transport to position a substrate 104 a in the chamber 106 ; a gas flow control instruction set to operate the flow control valves 178 to set a flow of sputtering gas to the chamber 106 ; a gas pressure control instruction set to operate the exhaust throttle valve 188 to maintain a pressure in the chamber 106 ; a gas energizer control instruction set to operate the gas energizer 116 to set a gas energizing power level; a temperature control instruction set to control temperatures in the chamber 106 ; and a process monitoring instruction set to monitor the process in the chamber 106 .
- the features 25 can be formed on the surface 20 by means other than those specifically described.
- the metal coating 30 may comprise materials other than those described, and may be formed by alternative suitable methods.
- relative or positional terms shown with respect to the exemplary embodiments are interchangeable. Therefore, the appended claims should not be limited to the descriptions of the preferred versions, materials, or spatial arrangements described herein to illustrate the invention.
Abstract
A component for a substrate processing chamber has a structure having an overlying metal coating. The metal coating has a plurality of electron beam textured features that are formed by scanning an electron beam across a surface of the metal coating. The electron beam textured features include a plurality of depressions and protuberances on the surface that are capable of accumulating process deposits during processing of a substrate to reduce contamination of the substrate. The component having the metal coating provides improved processing results, and exhibits reduced erosion during cleaning processes performed to remove process deposits from the component.
Description
- In the processing of substrates such as semiconductor wafers and displays, a substrate is placed in a process chamber and exposed to an energized gas to deposit or etch material on the substrate. During such processing, process residues are generated and can deposit on internal surfaces in the chamber. For example, in sputter deposition processes, material sputtered from a target for deposition on a substrate also deposits on other component surfaces in the chamber, such as on deposition rings, shadow rings, wall liners, and focus rings. In subsequent process cycles, the deposited process residues can “flake off” of the chamber surfaces to fall upon and contaminate the substrate. To reduce the contamination of the substrates by process residues, the surfaces of components in the chamber can be textured. Process residues adhere to the textured surface and inhibit the process residues from falling off and contaminating the substrates in the chamber.
- In one version, the textured component surface is formed by directing an electromagnetic energy beam onto a surface of a process chamber component surface to form depressions and protrusions to which process deposits adhere. An example of such a surface is a Lavacoat™ surface, as described for example in U.S. Patent Publication No. 2003-0173526 to Popiolkowski et al, published on Sep. 18, 2003, and filed on Mar. 13, 2002; and U.S. Patent Publication No. 2004-0056211 to Popiolkowski et al, published on Mar. 25, 2004, and filed on Jul. 17, 2003—both commonly assigned to Applied Materials, Inc, and both of which are incorporated herein by reference in their entireties. The Lavacoat™ surface comprises depressions and protrusions to which process residues can adhere to reduce the contamination of substrates during their processing.
- While components having textured surfaces provide improved residue adherence over other types of process components, performance issues can arise when the components are cleaned to remove accumulated process residues. In an exemplary cleaning process, the component comprising the textured surface is immersed in a cleaning solution, such as an acidic solution. However, cleaning solutions that are capable of cleaning process residues can also erode the textured surface to alter the surface features, and consequently, reduce the adherence of process residues thereto. For example, textured component surfaces comprising aluminum and titanium can be eroded by an acidic solution of HNO3 and HF—which is used to remove tantalum-containing process residues from the component surfaces. Because the eroded surfaces can exhibit poor residue adhesion, the components may require replacement or refurbishment after only a few cleaning cycles, thereby increasing substrate processing costs and chamber downtime.
- Accordingly, it is desirable to have a component comprising a textured surface that provides good adherence of process residues, to improve processing results and reduce contamination of substrates. It is further desirable to be able to effectively clean accumulated process residues from the component surface without erosion of the residues during cleaning. It is further desirable to have a method of fabricating a component having a textured surface that has improved erosion resistance during cleaning processes and provides good results in the processing of substrates.
- In one version, a component for a substrate processing chamber has a structure having an overlying metal coating. The metal coating has a plurality of electron beam textured features that are formed by scanning an electron beam across a surface of the metal coating. The textured features include a plurality of depressions and protuberances that are capable of accumulating process deposits during processing of a substrate to reduce contamination of the substrate. The component having the metal coating provides improved processing results, and exhibits reduced erosion during cleaning processes performed to remove process deposits from the component.
- In another version, a process kit for a substrate processing chamber has a ring adapted to at least partially surround a substrate in the processing chamber. The ring is of a metallic material, and has a stainless steel coating. The stainless steel coating has electron beam textured features thereon, the electron beam textured features having a plurality of depressions and protuberances. The process kit provides improved erosion resistance in the substrate processing chamber.
- In yet another version, a process chamber shield for a substrate processing chamber has a shield structure that is adapted to at least partially shield a process chamber wall. The shield structure is of a metallic material, and has a stainless steel coating. The stainless steel coating has electron beam textured features thereon, the electron beam textured features having a plurality of depressions and protuberances. The process chamber shield provides improved erosion resistance in the substrate processing chamber.
- In another version, a method of fabricating a component for a substrate processing chamber includes providing a component structure and forming a metal coating on the component structure. An electron beam is scanned across a surface of the metal coating to form a plurality of textured features including depressions and protuberances on the surface. The metal coating can be formed by at least partially melting a coating material and propelling the coating material onto the component structure.
- These features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, which illustrate examples of the invention. However, it is to be understood that each of the features can be used in the invention in general, not merely in the context of the particular drawings, and the invention includes any combination of these features, where:
-
FIG. 1 a is a sectional side view of a component having a metal coating and a textured surface formed by scanning an electromagnetic energy beam across the layer; -
FIG. 1 b is a sectional top view of an embodiment of the component ofFIG. 1 a; and -
FIG. 2 is a sectional side view of an embodiment of a substrate processing chamber having one or more components comprising electron beam textured features on a metal coating. - A
process chamber component 22 having atextured surface 20 is provided for the processing of substrates in an energized gas in aprocess chamber 106, as shown for example inFIGS. 1 a and 1 b. Thecomponent 22 having the textured surface reduces particle generation in theprocess chamber 106 by providing a “sticky” surface to whichprocess deposits 24 adhere, thus allowing thedeposits 24 to accumulate on thetextured surface 20.Process deposits 24 that adhere to thetextured surface 20 can include metal-containing deposits, such as deposits comprising at least one of tantalum, tantalum nitride, titanium, titanium nitride, aluminum, copper, tungsten, and tungsten nitride. Thechamber components 22 having thetextured surface 20 can comprise, for example, a portion of agas delivery system 112 that provides process gas in thechamber 106, asubstrate support 114 that supports thesubstrate 104 a in thechamber 106, aprocess kit 139, agas energizer 116 that energizes the process gas,chamber enclosure walls 118 andshields 120, or agas exhaust 122 that exhausts gas from thechamber 106. - Referring to
FIG. 2 , which illustrates an exemplary version of a physicalvapor deposition chamber 106,components 22 having thetextured surface 20 can include achamber enclosure wall 118, achamber shield 120, atarget 124, atarget rim 125, a component of aprocess kit 139 such as at least one of acover ring 126 and adeposition ring 128, a support ring 130,insulator ring 132, acoil 135,coil support 137, shutter disk 104 b,clamp shield 141, and a portion of thesubstrate support 114. For example, components having the textured surface can include Applied Material's part numbers 0020-50007, 0020-50008, 0020-50010, 0020-50012, 0020-50013, 0020-48908, 0021-23852, 0020-48998, 0020-52149, 0020-51483, 0020-49977, 0020-52151, 0020-48999, 0020-48042 and 0190-14818, from Applied Materials, Santa Clara, Calif. This list of components is merely exemplary and the other components or components from other types of chambers can also have the textured surface, thus, the present invention should not be limited to the components listed or described herein. - In one version, one or more
process chamber components 22 comprise a surface that is textured by scanning anelectromagnetic energy beam 40 such as anelectron beam 40 across thesurface 20, to form electron beamtextured features 25 on the surface. An example of such atextured surface 20 is that formed by a Lavacoat™ process, as described for example in U.S. patent application Ser. No. 10/653,713 to West, et al, filed on Sep. 2, 2003, entitled “Fabricating and Cleaning Chamber Components Having Textured Surfaces,” and aforementioned U.S. Patent Publication Nos. 2003/0173526 and 2004/0056211, all commonly assigned to Applied Materials, Inc., and all of which are incorporated herein by reference in their entireties. The electron beam textured features 25 of the Lavacoat™ process comprise a plurality ofdepressions 23 andprotuberances 26 to whichprocess deposits 24 generated during processing can adhere, as shown for example inFIG. 1 a. - The Lavacoat™
textured surface 20 can be formed by generating anelectromagnetic energy beam 40, such as anelectron beam 40, and directing the beam onto thesurface 20 of thecomponent 22. While the electromagnetic energy beam is preferably an electron beam, it can also comprise protons, neutrons and X-rays and the like. Thebeam 40 is typically focused on a region of thesurface 20 for a period of time, during which time thebeam 40 interacts with thesurface 20 to form thetextured features 25 on thesurface 20. It is believed that thebeam 40 forms thefeatures 25 by rapidly heating the region of thesurface 20, typically to a melting temperature of the surface material. At least a portion of the surface material may even be evaporated or ablated from thesurface 20 by the rapid heating. The rapid heating causes some of the surface material to be ejected outwards, which formsdepressions 23 in the regions the material was ejected from, andprotuberances 26 in areas where the ejected material re-deposits. After the desired features in the region are formed, thebeam 40 is scanned to a different region of thecomponent surface 20 to form features in the new region. - The
electromagnetic energy beam 40 can be scanned across thesurface 20 to form a desired pattern oftextured features 25 on thesurface 20, such as a honeycomb-like structure ofdepressions 23 andprotuberances 26, as shown for example inFIG. 1 a. Thefeatures 25 formed by this method are typically macroscopically sized. For example, thedepressions 23 can have a depth d as measured from abase level 28 of thesurface 20 of from about 20 micrometers to about 1600 micrometers. A surface diameter w of thedepressions 23 may be from about 120 micrometers to about 2600 micrometers and even from about 200 micrometers to about 2300 micrometers. Theprotuberances 26 can comprise a height h above thebase surface 28 of from about 50 micrometers to about 1600 micrometers, and even from about 100 micrometers to about 1200 micrometers. The Lavacoat™textured surface 20 can have an overall surface roughness average of from about 60 micrometers to about 100 micrometers, the roughness average of thesurface 20 being defined as the mean of the absolute values of the displacements from the mean line of the features along thesurface 20. Thetextured surface 20 can also be further roughened after scanning with theelectromagnetic energy beam 40 to provide different levels of texture on thesurface 20, as described for example in the patent applications to Popiolkowski et al. and West et al. that are incorporated by reference above. For example, thesurface 20 can be grit blasted by propelling grit particles towards thesurface 20 with pressurized gas, or can be chemically roughened, to form a relatively fine texture overlying the macroscopicallysized features 25 on thesurface 20. The roughenedsurface 20 improves the adhesion ofprocess deposits 24 to reduce contamination of the processedsubstrates 104 a. - In one version, the
textured surface 20 can be formed on ametal coating 30 on thecomponent 22, as shown for example inFIG. 1 a. Themetal coating 30 desirably comprises a material that is resistant to erosion by the energized gases provided to process asubstrate 104 a or clean theprocess chamber 106, and is also desirably resistant to erosion from cleaning solutions that may be used to clean thecomponent 20, such as acidic or basic cleaning solutions. Themetal coating 30 can be formed on asurface 33 of anunderlying structure 32 of thecomponent 30 to protect theunderlying structure 32. For example, theunderlying structure 32 may comprise a first material having desired properties, such as desired thermal and mechanical properties, and themetal coating 30 may comprise a second material having higher erosion resistance than the first material. Themetal coating 30 may also comprise a material that can be treated to provide a desired texture of the metal coating surface, such as for example a desired roughness or textured pattern on thesurface 20, that could not otherwise be desirably provided by the material of theunderlying structure 32. For example, the material of the metal coating may be selected to allow for a finer or rougher texturing of themetal coating surface 20. A suitable material for themetal coating 30 can be selected with respect to the substrate processing requirements to provide the desired properties, and can comprise for example at least one of stainless steel, copper, nickel, tantalum and titanium. - A material having suitable properties for the
underlying structure 32 may be a metallic material, such as for example at least one of titanium, stainless steel; copper, tantalum and aluminum; and can also comprise a ceramic material, such as at least one of aluminum oxide, aluminum nitride, and quartz. The underlying structure is selected according to desired properties such as desired thermal and mechanical properties. For example, anunderlying structure 32 comprising aluminum may be desirable because aluminum is typically a relatively cheap material having good thermal conductivity. Anunderlying structure 32 comprising stainless steel may provide good erosion resistance and thermal conductivity. Anunderlying structure 32 comprising titanium may provide a desired relatively low thermal coefficient of expansion. Also, anunderlying structure 32 comprising copper may provide good thermal conductivity as well as a relatively low thermal coefficient of expansion. Underlyingstructures 32 comprising a ceramic material, such as aluminum oxide, may provide a desired level of thermal insulation and/or thermal conductivity, and a desired relatively low thermal coefficient of expansion. In one suitable embodiment, ametal coating 30 comprising stainless steel is formed over anunderlying structure 32 comprising aluminum or titanium, such as a process kit or shield structure, to provide acomponent 22 having atextured surface 20 with improved erosion resistance while maintaining the desired overall mechanical and thermal properties of thecomponent 22. In another suitable embodiment, ametal coating 30 comprising stainless steel is formed over anunderlying structure 32 comprising aluminum oxide. - In one version, the
metal coating 30 can be providing by spraying a coating of material over thesurface 33 of theunderlying component structure 32. Suitable spraying methods can include thermal spraying methods, such as for example at least one of HVOF (high velocity oxygen fuel), flame spraying, plasma spraying, twin wire or single wire arc spraying, welding methods such as TIG, and other thermal spraying methods, which are capable of forming well-bonded coatings. In a typical thermal spraying method, the coating material in powder or wire form is heated to a molten or near-molten state, for example by a torch. A pressurized gas is used to propel the coating material onto thesurface 33 of theunderlying structure 32. For example, in the HVOF method, an HVOF spray gun ignites an oxygen-fuel mixture to heat and at least partially melt the coating material as it is propelled towards thestructure surface 33. A HVOF spray gun that may be suitable for forming themetal coating 30 is the HVOF spray gun available from Sulzer Metco Holding AG in Winterthur, Switzerland. Alternatively, themetal coating 30 can be formed by other methods, such as by electroplating metal coating material on theunderlying structure 32, or by a physical or chemical vapor deposition method. - The
metal coating 30 desirably comprises a thickness that is sufficiently high to provide good erosion resistance and allow for the formation of the textured features 25 on thesurface 20 of thecoating 30. Themetal coating 30 is desirably also sufficiently thin to provide good adhesion of thecoating 30 to theunderlying structure 32 to inhibit spalling or flaking of thecoating 30 from the structure. A suitable thickness may be a thickness of themetal coating 30 may from about 120 micrometers to about 2600 micrometers, such as from about 500 micrometers to about 1300 micrometers. Themetal coating 30 can be formed over substantially theentire surface 33 of theunderlying structure 32, or on selected portions of thestructure surface 33 that are, for example, especially susceptible to erosion, or that tend to accumulate large quantities ofprocess deposits 24. Once themetal coating 30 has been formed, thecoating 30 can be textured, for example by scanning anelectron beam 40 across thesurface 20 of thecoating 30, to form thetextured features 25 that are capable of collecting process deposits during the processing ofsubstrates 104 a. The textured features 25 are desirably formed substantially entirely in themetal coating 30, and substantially without exposing theunderlying structure 32, as shown for example inFIG. 1 a. - The
component 22 comprising themetal coating 30 having thetextured surface 20 can be cleaned after processing a predetermined number ofsubstrates 104 a to removeprocess deposits 24 that have accumulated on thetextured surface 20, such as tantalum-containing deposits. For example, thetextured surface 20 of thecomponent 22 can be immersed in a cleaning solution, such as an acidic solution of 20% by weight HF and 80% by weight HNO3, to clean theprocess deposits 24. Any exposed regions of thesurface 33 of theunderlying structure 32 that are not covered by themetal coating 30 can be masked with a protective material, such as a polyester-based material, to protect the regions from erosion by the cleaning solution. An example of a protective material may be polyester tape (plater's tape) commercially available from 3M™, United States. Other cleaning solutions and steps may also be provided, such as rinsing with de-ionized water, ultrasonicating, baking or immersing in other chemical cleaning solutions. - The
component 22 having themetal coating 30 with thetextured surface 20 provides improved results overcomponents 22 without themetal coating 30. For example, acomponent 22 having ametal coating 30 with an electron beam texturedsurface 20 that comprises stainless steel, and that is formed over anunderlying structure 32 comprising aluminum or titanium, can be cleaned in a cleaning solution comprising HF and HNO3 and recycled for re-use in theprocess chamber 106 at least about 10 times, while continuing to provide good processing results in thechamber 106. In contrast, acomponent 22 without ametal coating 30, such as acomponent 22 consisting of aluminum and having an electron beam texturedsurface 20, is typically capable of being cleaned and re-cycled for re-use in theprocess chamber 106 no more than about 3 times, before the erosion of thecomponent 22 becomes too severe to provide good processing results. - An example of a
suitable process chamber 106 having acomponent 22 with ametal coating 30 and electron beamtextured features 25 and is shown inFIG. 2 . Thechamber 106 can be a part of a multi-chamber platform (not shown) having a cluster of interconnected chambers connected by a robot arm mechanism that transferssubstrates 104 a between thechambers 106. In the version shown, theprocess chamber 106 comprises a sputter deposition chamber, also called a physical vapor deposition or PVD chamber, which is capable of sputter depositing material on asubstrate 104 a, such as one or more of tantalum, tantalum nitride, titanium, titanium nitride, copper, tungsten, tungsten nitride and aluminum. Thechamber 106 comprisesenclosure walls 118 that enclose aprocess zone 109, and that includesidewalls 164, abottom wall 166, and aceiling 168. A support ring 130 can be arranged between thesidewalls 164 andceiling 168 to support theceiling 168. Other chamber walls can include one ormore shields 120 that shield theenclosure walls 118 from the sputtering environment. - The
chamber 106 comprises asubstrate support 114 to supportsubstrates 104 a in thesputter deposition chamber 106. Thesubstrate support 114 may be electrically floating or may comprise anelectrode 170 that is biased by apower supply 172, such as an RF power supply. Thesubstrate support 114 can also support other wafers 104 such as a moveable shutter disk 104 b that can protect theupper surface 134 of thesupport 114 when thesubstrate 104 a is not present. In operation, thesubstrate 104 a is introduced into thechamber 106 through a substrate loading inlet (not shown) in asidewall 164 of thechamber 106 and placed on thesupport 114. Thesupport 114 can be lifted or lowered by support lift bellows and a lift finger assembly (not shown) can be used to lift and lower the substrate onto thesupport 114 during transport of thesubstrate 104 a into and out of thechamber 106. - The
support 114 may also comprise aprocess kit 139 one or more rings, such as acover ring 126 and adeposition ring 128, which cover at least a portion of theupper surface 134 of thesupport 114 to inhibit erosion of thesupport 114. In one version, thedeposition ring 128 at least partially surrounds thesubstrate 104 a to protect portions of thesupport 114 not covered by thesubstrate 104 a. Thecover ring 126 encircles and covers at least a portion of thedeposition ring 128, and reduces the deposition of particles onto both thedeposition ring 128 and theunderlying support 114. - A process gas, such as a sputtering gas, is introduced into the
chamber 106 through agas delivery system 112 that includes a process gas supply comprising one ormore gas sources 174 that each feed aconduit 176 having a gasflow control valve 178, such as a mass flow controller, to pass a set flow rate of the gas therethrough. Theconduits 176 can feed the gases to a mixing manifold (not shown) in which the gases are mixed to from a desired process gas composition. The mixing manifold feeds agas distributor 180 having one ormore gas outlets 182 in thechamber 106. The process gas may comprise a non-reactive gas, such as argon or xenon, which is capable of energetically impinging upon and sputtering material from a target. The process gas may also comprise a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, that are capable of reacting with the sputtered material to form a layer on thesubstrate 104 a. Spent process gas and byproducts are exhausted from thechamber 106 through anexhaust 122 which includes one or moreexhaust ports 184 that receive spent process gas and pass the spent gas to anexhaust conduit 186 in which there is athrottle valve 188 to control the pressure of the gas in thechamber 106. Theexhaust conduit 186 feeds one or more exhaust pumps 190. Typically, the pressure of the sputtering gas in thechamber 106 is set to sub-atmospheric levels. - The sputtering
chamber 106 further comprises asputtering target 124 facing asurface 105 of thesubstrate 104 a, and comprising material to be sputtered onto thesubstrate 104 a, such as for example at least one of tantalum and tantalum nitride. Thetarget 124 is electrically isolated from thechamber 106 by anannular insulator ring 132, and is connected to apower supply 192. The sputteringchamber 106 also has ashield 120 to protect awall 118 of thechamber 106 from sputtered material. Theshield 120 can comprise a wall-like cylindrical shape having upper andlower shield sections chamber 106. In the version shown inFIG. 2 , theshield 120 has anupper section 120 a mounted to the support ring 130 and alower section 120 b that is fitted to thecover ring 126. Aclamp shield 141 comprising a clamping ring can also be provided to clamp the upper andlower shield sections 120 a,b together. Alternative shield configurations, such as inner and outer shields, can also be provided. In one version, one or more of thepower supply 192,target 124, and shield 120, operate as agas energizer 116 that is capable of energizing the sputtering gas to sputter material from thetarget 124. Thepower supply 192 applies a bias voltage to thetarget 124 with respect to theshield 120. The electric field generated in thechamber 106 from the applied voltage energizes the sputtering gas to form a plasma that energetically impinges upon and bombards thetarget 124 to sputter material off thetarget 124 and onto thesubstrate 104 a. Thesupport 114 having theelectrode 170 and supportelectrode power supply 172 may also operate as part of thegas energizer 116 by energizing and accelerating ionized material sputtered from thetarget 124 towards thesubstrate 104 a. Furthermore, agas energizing coil 135 can be provided that is powered by apower supply 192 and that is positioned within thechamber 106 to provide enhanced energized gas characteristics, such as improved energized gas density. Thegas energizing coil 135 can be supported by acoil support 137 that is attached to ashield 120 or other wall in thechamber 106. - The
chamber 106 can be controlled by acontroller 194 that comprises program code having instruction sets to operate components of thechamber 106 to processsubstrates 104 a in thechamber 106. For example, thecontroller 194 can comprise a substrate positioning instruction set to operate one or more of thesubstrate support 114 and substrate transport to position asubstrate 104 a in thechamber 106; a gas flow control instruction set to operate theflow control valves 178 to set a flow of sputtering gas to thechamber 106; a gas pressure control instruction set to operate theexhaust throttle valve 188 to maintain a pressure in thechamber 106; a gas energizer control instruction set to operate thegas energizer 116 to set a gas energizing power level; a temperature control instruction set to control temperatures in thechamber 106; and a process monitoring instruction set to monitor the process in thechamber 106. - Although exemplary embodiments of the present invention are shown and described, those of ordinary skill in the art may devise other embodiments which incorporate the present invention, and which are also within the scope of the present invention. For example, the
features 25 can be formed on thesurface 20 by means other than those specifically described. Also, themetal coating 30 may comprise materials other than those described, and may be formed by alternative suitable methods. Furthermore, relative or positional terms shown with respect to the exemplary embodiments are interchangeable. Therefore, the appended claims should not be limited to the descriptions of the preferred versions, materials, or spatial arrangements described herein to illustrate the invention.
Claims (18)
1. A component for a substrate processing chamber, the component comprising:
(a) a component structure;
(b) a metal coating on the component structure; and
(c) electron beam textured features on the metal coating, the electron beam textured features comprising a plurality of depressions and protuberances,
whereby the component provides improved erosion resistance in the substrate processing chamber.
2. A component according to claim 1 wherein the metal coating comprises at least one of stainless steel, copper, nickel, tantalum and titanium.
3. A component according to claim 2 wherein the metal coating comprises a sprayed coating that is formed by at least partially melting coating material and propelling the coating material onto the component structure.
4. A component according to claim 1 wherein the metal coating has a thickness of from about 120 micrometers to about 2600 micrometers.
5. A component according to claim 1 wherein the electron beam textured features comprise depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances comprising a height of from about 50 micrometers to about 1600 micrometers.
6. A component according to claim 1 wherein the component comprises at least one of a chamber enclosure wall, a chamber shield, a target, a target rim, a cover ring, a deposition ring, a support ring, an insulator ring, a coil, a coil support, a shutter disk, a clamp shield, and a portion of a substrate support.
7. A substrate processing chamber comprising the component of claim 1 , the chamber comprising a substrate support, gas delivery system, gas energizer and exhaust.
8. A process kit for a substrate processing chamber, the process kit comprising:
(a) a ring adapted to at least partially surround a substrate in the processing chamber, the ring comprising a metallic material;
(b) a stainless steel coating on the ring; and
(c) electron beam textured features on the stainless steel coating, the electron beam textured features comprising a plurality of depressions and protuberances,
whereby the process kit provides improved erosion resistance in the substrate processing chamber.
9. A component according to claim 8 wherein the electron beam textured features comprise depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances comprising a height of from about 50 micrometers to about 1600 micrometers.
10. A component according to claim 8 wherein the ring comprises a metallic material comprising at least one of titanium, stainless steel, copper, tantalum and aluminum.
11. A process chamber shield for a substrate processing chamber, the shield comprising:
(a) a shield structure adapted to at least partially shield a process chamber wall, the shield structure comprising a metallic material;
(b) a stainless steel coating on the shield structure; and
(c) electron beam textured features on the stainless steel coating, the electron beam textured features comprising a plurality of depressions and protuberances,
whereby the process chamber shield provides improved erosion resistance in the substrate processing chamber.
12. A component according to claim 11 wherein the electron beam textured features comprise depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances comprising a height of from about 50 micrometers to about 1600 micrometers.
13. A component according to claim 11 wherein the shield structure comprises a metallic material comprising at least one of titanium, stainless steel, copper, tantalum and aluminum.
14. A method of fabricating a component for a substrate processing chamber, the method comprising:
(a) providing a component structure;
(b) forming a metal coating on the component structure, the metal coating having a surface; and
(c) scanning an electron beam across the surface to form a plurality of electron beam textured features comprising depressions and protuberances in the surface.
15. A method according to claim 14 wherein (b) comprises forming a metal coating comprising at least one of stainless steel, copper, nickel, tantalum and titanium.
16. A method according to claim 14 wherein (b) comprises spraying a metal coating on the component structure by at least partially melting coating material and propelling the coating material onto the structure.
17. A method according to claim 14 wherein (b) comprises forming a metal coating having a thickness of from about 120 micrometers to about 2600 micrometers.
18. A method according to claim 14 wherein (c) comprises scanning an electron beam across the surface to form a plurality of electron beam textured features comprising depressions having (i) a depth of from about 20 micrometers to about 1600 micrometers, and (ii) a surface diameter of from about 120 micrometers to about 2600 micrometers, and protuberances having a height of from about 50 micrometers to about 1600 micrometers.
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