US20060211177A1 - Structure and process for packaging RF MEMS and other devices - Google Patents
Structure and process for packaging RF MEMS and other devices Download PDFInfo
- Publication number
- US20060211177A1 US20060211177A1 US11/436,033 US43603306A US2006211177A1 US 20060211177 A1 US20060211177 A1 US 20060211177A1 US 43603306 A US43603306 A US 43603306A US 2006211177 A1 US2006211177 A1 US 2006211177A1
- Authority
- US
- United States
- Prior art keywords
- devices
- substrate
- mems
- vias
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00333—Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- leads are not brought out on the top surface of a silicon substrate, so that a reliable bond between a glass cap to a smooth silicon substrate can be achieved.
Abstract
A structure and process for packaging RF MEMS and other devices employs a substrate of silicon, for example, and a cap of glass, for example, having cavities to receive the devices. MEMS or other devices are supported on an upper surface of the substrate, into which metal-filled blind vias are formed. The cap is attached to the substrate, so as to enclose designated MEMS or other devices in the cavities. The substrate is then thinned so as to expose the metal of the vias at a lower surface of the substrate. Electrical connecting elements such as solder balls are then applied to the metal of the vias. The resultant composite substrate is then divided to provide individual packaged devices.
Description
- This invention is concerned with the packaging of MEMS (Micro Electro Mechanical System) devices and other devices. Typically, MEMS are micromachines that may include elements, sensors, actuators and electronics on a common silicon or other substrate.
- MEMS technology is sometimes referred to as the next semiconductor revolution. For scientists and system engineers it brings unique and timely opportunity to integrate various functions such as electrical, optical, fluidic, etc. and is part of next-generation “multi-functional systems (MFS)”. MEMS technology has seen a significant surge in the past decade, and MEMS devices are finding applications in many strategic as well as consumer fields. While MEMS technology has progressed rapidly, barriers to packaging, and costs, have hindered widespread realization of MEMS-based systems.
- Packaging of MEMS is an area of intense interest for the past few years and will be of greater importance in the years to come. Unlike IC packaging, packaging of MEMS is “application specific”. The development of application specific surfaces and interfaces and integration of dissimilar materials for building MEMS integrated system-in-package (SIP) for RF applications, are of particular interest. Frequently, MEMS devices must be packaged in an inert atmosphere or vacuum. Bringing leads out on the top surface of a silicon substrate, for example, creates topography that makes sealing of a cap to the substrate difficult and that makes anodic bonding of a glass cap to the substrate impossible.
- The present invention provides an improved structure and process for packaging RF MEMS and other devices.
- An improved package for MEMS and other devices in accordance with the invention can provide, as desired, a physical housing to protect the device, functional interconnects to mechanical systems, avenues for managing by-products like heat and for reducing functional losses like insertion loss of the system, and electrical interfaces to electronic control systems.
- In a preferred embodiment of the invention, leads are not brought out on the top surface of a silicon substrate, so that a reliable bond between a glass cap to a smooth silicon substrate can be achieved.
- Among the features and advantages of packaging in accordance with the invention are the following:
- (1) small electrical interconnection lengths
- (2) integration of paper-thin IC chips as a part of a system
- (3) wafer scale packages
- (4) chip-scale integration of MEMS devices with electrical control platforms
- (5) use of traditional processing steps, which makes fabrication manufacturing economical
- (6) adaptability to flat/rigid (e.g., ceramic) as well as flexible (e.g., Kapton) substrate carriers.
- Furthermore, the invention meets the needs of application specific packaging requirements, which may include the following:
- (1) low insertion loss*
- (2) high Q factor*
- (3) hermetic/vacuum packaging
- (4) high material integrity
- (5) low temperature processing
- (6) integral mechanical strength1
1*(Note: as a function of frequency)
- A packaged RF relay MEMS device in accordance with the invention can provide:
- (1) high bandwidth (DC to 20 GHz)
- (2) low electrical losses (less than 0.1 dB due to package)
- In one embodiment of the invention, MEMS devices are fabricated on an upper surface of a silicon wafer, into which metal-filled blind vias extend. A glass wafer cap is fabricated with cavities to enclose designated MEMS devices. The cavities can be evacuated or filled with an insert gas. The cap is attached to the silicon wafer by electrostatic fusion bonding, for example. In a thinning operation, a substantial portion of the silicon wafer is removed by back-grinding and/or plasma etching to expose the metal of the vias at a lower surface of the silicon substrate, using the glass cap to provide structural integrity and support. Electrical connecting elements are then applied to the exposed metal. The resulting composite wafer structure is then divided into individual packaged devices.
- The invention will be further described in conjunction with the accompanying drawings, which illustrate diagrammatically a preferred (best mode) embodiment, in elevation, and wherein:
-
FIG. 1 shows MEMS devices on a silicon wafer having insulated, metal-filled blind vias; -
FIG. 2 shows a glass wafer (cap) fabricated with cavities to provide clearance for MEMS devices; -
FIG. 3 shows the attachment of the glass wafer to the silicon wafer, with the cavities for the MEMS devices sealed; -
FIG. 4 shows the composite wafer structure ofFIG. 3 after back-grinding and/or plasma etching of the silicon to expose the metal of the vias; -
FIG. 5 shows the composite wafer structure ofFIG. 4 after application of terminal pad metal and solder balls; and -
FIG. 6 shows the composite wafer structure ofFIG. 5 divided into individual packaged devices. - A preferred embodiment of a structure and process for packaging RF MEMS devices (and other devices) in accordance with the invention will now be described with reference to the drawings.
-
FIG. 1 shows asilicon wafer substrate 10 on which a plurality of MEMS devices 12 (two being shown in the illustration) are fabricated by conventional techniques.Blind vias 14 that extend from an upper surface of the substrate are formed by conventional techniques, and are insulated, as by depositing silicon dioxide (not shown) in the vias by conventional techniques. The vias may extend 100 um into the silicon substrate, for example. At least some of the vias are then filled with ametal 16, such as copper, for example, by conventional plating, for example. Some of the vias can provide electrical connections to the MEMS devices. Other vias can provide photonic or fluidic interfaces, for example. The terms “upper” and “lower” are used herein merely to relate opposite surfaces and are not intended to limit the actual orientation of the surfaces. The term “filled” includes complete or partial filling of the vias sufficient to provide desired electrical conductivity. - A cap, such as a
borosilicate glass wafer 18, is etched or otherwise processed to formcavities 20 for the MEMS devices, as shown inFIG. 2 . After theglass wafer 18 has been cleaned, the glass wafer and thesilicon wafer 10 are aligned and brought into contact as shown inFIG. 3 , so that thecavities 20 enclose designateddevices 12. Electrostatic fusion bonding or another technique is then used to attach theglass wafer 18 as a cap to thesilicon wafer 10. For example, the sandwich of the wafers may be heated to between 250° C. to 450° C. with high voltage applied between the wafers to create an electrostatic bond between the wafers. This process may be carried out in a vacuum chamber or a chamber containing inert gas, so that the sealed cavities including the MEMS devices contain a vacuum or inert gas. - As shown in
FIG. 4 , a substantial lower portion of thesilicon substrate 10 is removed in a thinning operation by back-grinding and/or plasma etching, for example, to expose themetal 16 in the vias. At this point, thesilicon substrate 10 is substantially thinner than the cap, and structural integrity and support are provided by theglass cap 18. The thinned silicon wafer may have a thickness of 75-100 um, for example. The resultant composite wafer sandwich structure may be cleaned, lapped, and polished with a standard organic agent. - As shown in
FIG. 5 , electrical connecting elements, such asterminal pad metal 22 andsolder balls 24, may be applied to the exposed metal of the vias. The solder balls attached to the vias can act as flip-chip interconnects, for example. The terminal pad metal is used to ensure good adhesion between the metal layers, but its use is optional. An additional insulating layer (not shown) may be provided on the lower surface of the thinnedsilicon substrate 10 to insulate the terminal pad metal and solder balls from the silicon. - The composite wafer structure shown in
FIG. 5 is then separated into individual dies D (packaged devices), as shown inFIG. 6 , as by conventional sawing, for example. Cutting of the composite wafer structure into individual dies can be done with a precision wafer-dicing machine. Spacing between the dies may, for example, be 325 micron for a 100 um saw blade plus an additional 100 micron shoulder space for “crack-free” dicing. - By virtue of the invention, packaging of MEMS or other devices on silicon wafers or other substrates can be achieved economically. Boring of long via through-holes in the substrate is unnecessary, and the processes of attaching a glass or other protective cap to an underlying substrate, and the thinning of the substrate, can be achieved simply by conventional techniques. A large number of individual device packages can be provided by simply dicing a packaged assembly into individual parts. The invention provides economy of scale by making it unnecessary to package individual devices in separate manufacturing operations.
- The invention is quite useful for the packaging of MEMS RF relays, mechanical filters, or other MEMS devices fabricated on silicon or other wafers by conventional means, but devices other than MEMS devices can be similarly packaged. Depending upon the needs of a particular application, bonding of the cap to the substrate can be achieved, for example, by anodic bonding, laser bonding, epoxy bonding, etc. For certain applications, such as MEMS RF relays, it is desirable to avoid a bonding technique that may introduce contaminants into the cavities that contain the devices.
- As mentioned above, the invention is applicable to the packaging of devices on substrates other than silicon. For example, the invention is applicable to Ti/Au—GaAs based RF MEMS devices, such as RF relays, using a GaAs substrate. The packaging system and process of the invention allow further integration of RF and control circuitry into a GaAs device. The substrate can be a passive substrate or an active substrate that performs functions in connection with the packaged device or with other devices to which the solder balls are connected. The substrate may be multi-layered, and the packaged devices in accordance with the invention can be stacked on similar or different devices, any of which may perform electrical, optical, fluidic, biological or gettering functions, for example. As one example, an RF MEMS package in accordance with the invention can be stacked on and connected to an IC chip.
- While preferred embodiments of the invention have been shown and described, it will be apparent to those skilled in the art that these embodiments are merely illustrative of the invention, and that various modifications can be made without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims.
Claims (6)
1-10. (canceled)
11. A packaging structure comprising:
a substrate, on a surface of which are provided a plurality of devices to be packaged; and
a cap having cavities therein attached to the substrate with devices on the surface enclosed in designated cavities;
said substrate being substantially thinner than said cap and having a plurality of vias extending from said surface to an opposite surface of said substrate.
12. A packaging structure according to claim 11 ,
wherein at least some of the vias contain metal, and
electrical connecting elements are applied to the metal of those vias at said opposite surface.
13. A packaging structure according to claim 11 , wherein the cap is attached to the substrate by a bonding technique selected from the group of electrostatic fusion bonding, anodic bonding, laser bonding, and epoxy bonding.
14. A packaging structure according to claim 11 , wherein the devices are MEMS devices.
15-19. (canceled)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/436,033 US20060211177A1 (en) | 2001-11-07 | 2006-05-18 | Structure and process for packaging RF MEMS and other devices |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33104701P | 2001-11-07 | 2001-11-07 | |
PCT/US2002/035491 WO2003054927A2 (en) | 2001-11-07 | 2002-11-06 | Structure and process for packaging rf mems and other devices |
US10/494,956 US7049175B2 (en) | 2001-11-07 | 2002-11-06 | Method of packaging RF MEMS |
US11/436,033 US20060211177A1 (en) | 2001-11-07 | 2006-05-18 | Structure and process for packaging RF MEMS and other devices |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/494,956 Division US7049175B2 (en) | 2001-11-07 | 2002-11-06 | Method of packaging RF MEMS |
PCT/US2002/035491 Division WO2003054927A2 (en) | 2001-11-07 | 2002-11-06 | Structure and process for packaging rf mems and other devices |
Publications (1)
Publication Number | Publication Date |
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US20060211177A1 true US20060211177A1 (en) | 2006-09-21 |
Family
ID=23292401
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/494,956 Expired - Fee Related US7049175B2 (en) | 2001-11-07 | 2002-11-06 | Method of packaging RF MEMS |
US11/436,033 Abandoned US20060211177A1 (en) | 2001-11-07 | 2006-05-18 | Structure and process for packaging RF MEMS and other devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/494,956 Expired - Fee Related US7049175B2 (en) | 2001-11-07 | 2002-11-06 | Method of packaging RF MEMS |
Country Status (3)
Country | Link |
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US (2) | US7049175B2 (en) |
AU (1) | AU2002365151A1 (en) |
WO (1) | WO2003054927A2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20070107932A1 (en) * | 2005-11-09 | 2007-05-17 | Jauniskis Linas A | Moisture resistant chip package |
US20070243662A1 (en) * | 2006-03-17 | 2007-10-18 | Johnson Donald W | Packaging of MEMS devices |
WO2009132324A1 (en) * | 2008-04-25 | 2009-10-29 | Texas Instruments Incorporated | Mems package having formed metal lid |
US20120111096A1 (en) * | 2004-06-18 | 2012-05-10 | Walsin Lihwa Corporation | Integration manufacturing process for mems device |
US20120149153A1 (en) * | 2009-05-27 | 2012-06-14 | Continental Automotive Systems, Inc. | Thin Semiconductor Device Having Embedded Die Support and Methods of Making the Same |
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IL159728A0 (en) * | 2001-08-24 | 2004-06-20 | Zeiss Stiftung | Method for producing micro-electromechanical components |
WO2003054927A2 (en) * | 2001-11-07 | 2003-07-03 | The Board Of Trustees Of The University Of Arkansas | Structure and process for packaging rf mems and other devices |
US6696645B2 (en) * | 2002-05-08 | 2004-02-24 | The Regents Of The University Of Michigan | On-wafer packaging for RF-MEMS |
TWI275168B (en) * | 2003-06-06 | 2007-03-01 | Sanyo Electric Co | Semiconductor device and method for making the same |
US7170155B2 (en) * | 2003-06-25 | 2007-01-30 | Intel Corporation | MEMS RF switch module including a vertical via |
DE10329326B3 (en) * | 2003-06-30 | 2005-02-03 | Siemens Ag | Manufacturing packages with electrical, electronic, micromechanical components or microelectromechanical systems involves providing protective wafer of ceramic, metal or plastic |
JP2005124018A (en) * | 2003-10-20 | 2005-05-12 | Tdk Corp | Electronic component and manufacturing method therefor |
US7303645B2 (en) | 2003-10-24 | 2007-12-04 | Miradia Inc. | Method and system for hermetically sealing packages for optics |
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US7344956B2 (en) | 2004-12-08 | 2008-03-18 | Miradia Inc. | Method and device for wafer scale packaging of optical devices using a scribe and break process |
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US7491581B2 (en) * | 2006-12-22 | 2009-02-17 | Honeywell International Inc. | Dicing technique for flip-chip USP wafers |
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US9527728B2 (en) * | 2013-07-22 | 2016-12-27 | Texas Instruments Incorporated | Integrated circuit package and method |
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CN105621351B (en) * | 2015-12-24 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | A kind of wafer-level encapsulation method of RF mems switches |
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IT201700103489A1 (en) | 2017-09-15 | 2019-03-15 | St Microelectronics Srl | METHOD OF MANUFACTURE OF A THIN FILTERING MEMBRANE, ACOUSTIC TRANSDUCER INCLUDING THE FILTERING MEMBRANE, ASSEMBLY METHOD OF THE ACOUSTIC TRANSDUCER AND ELECTRONIC SYSTEM |
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2002
- 2002-11-06 WO PCT/US2002/035491 patent/WO2003054927A2/en not_active Application Discontinuation
- 2002-11-06 US US10/494,956 patent/US7049175B2/en not_active Expired - Fee Related
- 2002-11-06 AU AU2002365151A patent/AU2002365151A1/en not_active Abandoned
-
2006
- 2006-05-18 US US11/436,033 patent/US20060211177A1/en not_active Abandoned
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US20120111096A1 (en) * | 2004-06-18 | 2012-05-10 | Walsin Lihwa Corporation | Integration manufacturing process for mems device |
US8318511B2 (en) * | 2004-06-18 | 2012-11-27 | Walsin Lihwa Corp. | Integration manufacturing process for MEMS device |
US20070107932A1 (en) * | 2005-11-09 | 2007-05-17 | Jauniskis Linas A | Moisture resistant chip package |
US20070243662A1 (en) * | 2006-03-17 | 2007-10-18 | Johnson Donald W | Packaging of MEMS devices |
WO2009132324A1 (en) * | 2008-04-25 | 2009-10-29 | Texas Instruments Incorporated | Mems package having formed metal lid |
US20090267223A1 (en) * | 2008-04-25 | 2009-10-29 | Texas Instruments Incorporated | MEMS Package Having Formed Metal Lid |
US8309388B2 (en) | 2008-04-25 | 2012-11-13 | Texas Instruments Incorporated | MEMS package having formed metal lid |
US20120149153A1 (en) * | 2009-05-27 | 2012-06-14 | Continental Automotive Systems, Inc. | Thin Semiconductor Device Having Embedded Die Support and Methods of Making the Same |
US20120153409A1 (en) * | 2009-05-27 | 2012-06-21 | Continental Automotive Systems, Inc. | Thin Semiconductor Device Having Embedded Die Support and Methods of Making the Same |
US8791539B2 (en) * | 2009-05-27 | 2014-07-29 | Continental Automotive Systems, Inc. | Thin semiconductor device having embedded die support and methods of making the same |
US8791540B2 (en) * | 2009-05-27 | 2014-07-29 | Continental Automotive Systems, Inc. | Thin semiconductor device having embedded die support and methods of making the same |
Also Published As
Publication number | Publication date |
---|---|
AU2002365151A8 (en) | 2003-07-09 |
US7049175B2 (en) | 2006-05-23 |
WO2003054927A2 (en) | 2003-07-03 |
US20050006738A1 (en) | 2005-01-13 |
AU2002365151A1 (en) | 2003-07-09 |
WO2003054927A3 (en) | 2003-12-24 |
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