US20070047381A1 - Method for continuously blending chemical solutions - Google Patents
Method for continuously blending chemical solutions Download PDFInfo
- Publication number
- US20070047381A1 US20070047381A1 US11/551,739 US55173906A US2007047381A1 US 20070047381 A1 US20070047381 A1 US 20070047381A1 US 55173906 A US55173906 A US 55173906A US 2007047381 A1 US2007047381 A1 US 2007047381A1
- Authority
- US
- United States
- Prior art keywords
- solution
- chemical
- sensor
- flowrate
- formulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/20—Measuring; Control or regulation
- B01F35/21—Measuring
- B01F35/2133—Electrical conductivity or dielectric constant of the mixture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/80—Forming a predetermined ratio of the substances to be mixed
- B01F35/82—Forming a predetermined ratio of the substances to be mixed by adding a material to be mixed to a mixture in response to a detected feature, e.g. density, radioactivity, consumed power or colour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0324—With control of flow by a condition or characteristic of a fluid
- Y10T137/0329—Mixing of plural fluids of diverse characteristics or conditions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0324—With control of flow by a condition or characteristic of a fluid
- Y10T137/0329—Mixing of plural fluids of diverse characteristics or conditions
- Y10T137/034—Controlled by conductivity of mixture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2499—Mixture condition maintaining or sensing
- Y10T137/2509—By optical or chemical property
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Accessories For Mixers (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Provided are a method and apparatus for continuously blending a chemical solution for use in semiconductor processing. The method involves the step of mixing a first chemical stream with a second chemical stream in a controlled manner to form a stream of a solution having a predetermined formulation. The apparatus allows one to practice the above method. The method and apparatus can accurately provide chemical solutions of desired concentration in a continuous manner. The invention has particular applicability in semiconductor device fabrication.
Description
- This application is a continuation of application Ser. No. 10/938,570, filed on Sep. 13, 2004, which is a divisional of application Ser. No. 09/468,411, filed on Dec. 20, 1999.
- The present invention relates to novel methods and apparatus for continuously blending a chemical solution for use in semiconductor processing and, more particularly, to their on-site use at a semiconductor manufacturing facility.
- In the semiconductor manufacturing industry, extensive use is made of liquid chemicals, for example, in wafer cleaning and etching processes. Accurate mixing of reagents at desired ratios is particularly important because variations in concentration of the chemicals introduce uncertainty in etch rates and, hence, are a source of process variation.
- Conventionally used chemicals in the semiconductor manufacturing industry which are formed by mixing together two or more chemicals include, for example, hydrofluoric acid (HF), ammonium fluoride (NH4F), hydrochloric acid (HCl), ammonium hydroxide (NH4OH) and nitric acid (HNO3). On-site preparation of such chemicals in ultrapure form is described, for example, in U.S. Pat. Nos. 5,785,820, 5,722,442, 5,846,387, 5,755,934 and in International Publication No. WO 96/39263, the contents of which documents are herein incorporated by reference.
- Conventionally, the blending of chemicals is performed by chemical suppliers off-site from the semiconductor manufacturing facility. The chemicals are typically blended through the use of load cells and mixing tanks, with analytical verification. The use of load cells, however, is undesirable for various reasons. For example, piping, which is attached to the weighed mixing vessel, exerts an unpredictable force. This can lead to inaccuracies in measuring the weight of the fluid in the vessel resulting in chemical blends of imprecise formulation.
- In addition, expensive electronic equipment is typically required for such known blending processes. The exposure of this equipment to corrosive chemical environments often leads to corrosion and premature failure thereof. Moreover, load cells require the use of additional laboratory instrumentation to determine incoming chemical assay as well as program adjustments to compensate for assay variability.
- Upon obtaining a desired chemical formulation, the chemicals are conventionally packaged in totes or drums for shipment to the semiconductor manufacturing facilities. Packaging and storage of the chemicals in this manner is undesirable in that the process of packaging the chemicals and the containers themselves are sources of contamination.
- Furthermore, the cost per unit volume of transporting ultrapure chemicals is high. This cost can be especially prohibitive if chemicals of all requisite concentrations are to be shipped. In this regard, the conventionally used chemicals, such as hydrofluoric acid, are often employed at various dilutions in the semiconductor manufacturing process. Chemical shipment is particularly inefficient with very dilute acids.
- Once at the semiconductor manufacturing site, the chemicals are stored until used. Such storage, however, is not particularly desirable, as considerable space is required and costs are incurred due to storage and management of the totes in the manufacturing facility.
- In addition, the chemicals are often unstable and therefore have limited shelf lives. High purity water (“deionized” or “DI” water), typically employed in the manufacture of chemicals, exhibits organic growth after short periods of time. Hence, it is not uncommon for the shelf life of a chemical to expire prior to use. The unused chemical must therefore be disposed of, resulting in economic loss as well as environmental issues associated with waste disposal.
- To address the problems associated with the processing of chemicals off-site from the point-of-use, on-site blending methods and apparatus have been proposed for semiconductor applications. An on-site blending method is described, for example, in International Publication No. WO 96/39651, the contents of which are incorporated herein by reference. An exemplified embodiment of that document involves a batch-type process, with mixing of the components taking place in a single blender tank. After mixing two chemicals in the blender tank to a desired endpoint, those chemicals are shut off. A third chemical is next introduced into the tank to a desired endpoint.
- One of the disadvantages associated with such a batch-type process is that it is difficult to achieve steady state conditions and the desired chemical formulation in a small amount of time. In addition, it is necessary with the batch-type process that a supply of the blended chemical be stored in a tank or other container to avoid production down time if the chemical should become depleted. The use of a storage container, however, is undesirable at least due to its space and management requirements.
- To meet the requirements of the semiconductor manufacturing industry and to overcome the disadvantages of the related art, it is an object of the present invention to provide novel methods for continuously blending a chemical solution. The invention allows for real time, precise control of chemical formulations by continuous monitoring and flowrate adjustment of the chemicals employed. The desired formulations can be achieved in a fast and facile manner from startup based on calibration data stored in one or more controllers.
- Furthermore, total cost associated with the chemicals can be significantly reduced since only concentrated acids, and not dilute solutions, need be shipped to the end user's site. This renders unnecessary the need to inventory and handle large volumes of dilute chemicals. In addition, the costs and time associated with laboratory analytical verification can be avoided or minimized, since the process is calibrated to analytical analysis at the time the process is set up and only periodically thereafter to ensure continued calibration accuracy.
- It is a further object of the invention to provide methods of continuously blending a chemical solution on-site at a semiconductor manufacturing facility.
- A further object of the present invention is to provide a novel apparatus for continuously blending a chemical solution.
- It is a further object of the invention to provide an apparatus for continuously blending a chemical solution on-site at a semiconductor manufacturing facility.
- Other objects and aspects of the present invention will become apparent to one of ordinary skill in the art on a review of the specification, drawings, and claims appended hereto.
- The objects and advantages of the invention will become apparent from the following detailed description of the preferred embodiments thereof in connection with the accompanying drawings, in which:
-
FIG. 1 is a process flow diagram of an apparatus for continuously blending solutions in accordance with one exemplary aspect of the invention; -
FIG. 2 is a process flow diagram of an apparatus for continuously blending solutions connected to supply the blended solution to a semiconductor processing tool, in accordance with a further exemplary aspect of the invention; -
FIG. 3 is a graph of weight assay percent of EDA versus conductivity in a accordance with Example 1 of the invention. -
FIG. 4 is a graph of weight assay percent of EDA versus conductivity at process set-up in accordance with Example 1 of the invention. -
FIG. 5 is a graph of conductivity versus time to exhibit the length of time need to bring the EDA component to specification in accordance with Example 1 of the invention. -
FIG. 6 is a graph of weight assay percent of KOH versus conductivity in a accordance with Example 1 of the invention. -
FIG. 7 is a graph of weight assay percent of KOH versus conductivity at process set-up in accordance with Example 1 of the invention. -
FIG. 8 is graph of conductivity versus time to exhibit the length of time need to bring the KOHS blender to specification in accordance with Example 1 of the invention. -
FIG. 9 is a graph of weight percent KOH and weight percent EDA in a blended solution, formed in accordance with an exemplary aspect of the invention, versus sample number. -
FIG. 10 is a graph of weight assay percent of NH4OH versus conductivity in a accordance with Example 2 of the invention. -
FIG. 11 is a graph of weight assay percent of surfactant versus conductivity at process set-up in a accordance with Example 2 of the invention. -
FIG. 12 is graph of weight percent assay versus sonic velocity ranges to exhibit the length of time need to bring the block cleaning solution to specification in accordance with Example 2 of the invention. - In accordance with the present invention, innovative methods and apparatus for continuously blending chemical solutions are provided. The invention finds particular applicability in the semiconductor manufacturing industry, wherein chemical solutions of desired formulations can be generated on-site, with the resulting chemical being introduced directly into one or more semiconductor processing tools. Of course, the resulting chemical employed can be in the form of aqueous solutions.
- According to a first aspect of the invention, a method of continuously blending a chemical solution for use in semiconductor processing is provided. The method comprises the step of mixing a first chemical stream with a second chemical stream in a controlled manner, to form a stream of a solution having a predetermined formulation.
- According to a further aspect of the invention, a method of continuously blending a chemical solution for use in semiconductor processing is provided. The method comprises the steps of:
-
- (a) mixing a first chemical with a second chemical in a controlled manner to provide a first solution having a predetermined formulation; and
- (b) mixing a third chemical with the first solution in a controlled manner to provide a second solution having a predetermined formulation.
Steps (a) and (b) are performed contemporaneously.
- In accordance with a further aspect of the invention, a method of continuously blending a chemical solution on-site at a semiconductor manufacturing facility is provided. The method comprises the steps of:
-
- (a) mixing a first chemical with a second chemical in a controlled manner to provide a first solution having a predetermined formulation; and
- (b) mixing a third chemical with the first solution in a controlled manner to provide a second solution having a predetermined formulation; and
- (c) introducing the blended solution into a semiconductor processing tool,
wherein steps (a) and (b) are performed contemporaneously.
- In accordance with yet a further aspect of the invention, an apparatus for continuously blending a chemical solution for use in semiconductor processing is provided. The apparatus comprises a first chemical source, a second chemical source and a third chemical source connected by a conduit system to allow a stream of the first chemical to be mixed with a stream of the second chemical to form a first solution, and a stream of the first solution to be mixed with a stream of the third chemical to provide a second solution. The first and second solutions are provided contemporaneously. Means for controlling the formulations of the first and second solutions are provided.
- In accordance with a further aspect of the invention, an apparatus for continuously blending a chemical solution on-site at a semiconductor manufacturing facility is provided. The apparatus comprises a first chemical source, a second chemical source and a third chemical source connected by a conduit system to allow a stream of the first chemical to be mixed with a stream of the second chemical to form a first solution, and a stream of the first solution to be mixed with a stream of the third chemical to provide a second solution. The first and second solutions are provided contemporaneously. Means for controlling the formulations of the first and second solutions are provided. A semiconductor processing tool is connected to receive the blended solution.
- In accordance with a further aspect of the invention, an apparatus for continuously blending a chemical solution for use in semiconductor processing is provided. The apparatus comprises a first chemical source and a second chemical source connected by a conduit system to allow a stream of the first chemical to be mixed with a stream of the second chemical to form a solution, and means for controlling the formulation of the solution.
- The invention will be described with reference to
FIG. 1 , which illustrates a process flow diagram of a system 100 for continuously blending chemical solutions in accordance with one exemplary aspect of the invention. The chemical solution is formed by mixing together any number of chemicals in a controlled manner to achieve a final solution of desired concentration. - If the chemical solution is to be used in the manufacture of electronic devices, the starting materials are preferably of ultrapure quality, preferably less than 1 ppb impurities. This will help to ensure a final chemical purity which also is ultrapure, and thus not detrimental to the devices being formed. The starting chemicals are typically in liquid form. However, gases may be employed, for example, by bubbling the gas into a liquid chemical.
- Typical combinations of chemicals used in semiconductor fabrication which may be applied to the invention include, for example, the following: deionized water, hydrofluoric acid (HF), nitric acid (HNO3) and acetic acid (CH3COOH); deionized water, hydrofluoric acid and ammonia (NH3), to form ammonium fluoride (NH4F); deionized water, potassium hydroxide (KOH) and ethylene diamine (EDA); and deionized water, ammonium hydroxide (NH4OH) and a surfactant, to form a block cleaning solution (BCS). Other combinations of the above or different chemicals or gases that are soluble in solution, would be understood by persons of ordinary skill in the art to be within the scope of the invention.
- A partial list of conventional chemicals that can be generated on-site at the semiconductor fabrication facility includes at least the hydrofluoric acid, buffered hydrofluoric acid, hydrochloric acid, and ammonia.
- For purposes of the present invention, it is convenient to classify the chemicals being mixed into two groups, i.e., ionic and non-ionic chemicals. This allows for the selection of an appropriate concentration sensor for the chemicals being blended. For concentration measurement of an ionic solution, a conductivity sensor, such as an electrodeless conductivity sensor employing AC toroid coils, or an acoustic signature sensor can be employed. Concentration measurement in non-ionic solutions can be accomplished with an acoustic signature sensor.
- Electrodeless conductivity systems measure the conductance in a solution by inducing an alternating current in a closed loop and measuring its magnitude. An electric current may be caused to flow in an electrolyte by means of induction. The electrodeless system contains an electrolyte which flows in an electrically insulating tube that surrounds two coils in a fashion that the electrolyte forms a closed loop linking the flux in both cores. These coils serve as a primary and secondary winding, and they are toroidal. Additionally, both windings are housed in the same encapsulation. The first toroidal coil serves as a single turn secondary winding in which an alternating voltage is induced. The second toroidal coil serves as a single turn primary winding in which the loop forms. This provides a means for measuring the resulting current, which is directly proportional to the specific conductance of the electrolyte comprising the loop. Suitable AC toroid coil sensors are commercially available from, for example, a model 3700 series electrodeless sensor provided by GLI International.
- Acoustic signature sensors are commercially available, for example, from Mesa Laboratories, Inc., Nusonics Division, Colo., and are described generally in International Publication No. WO 96/39263. Such sensors include an ultrasonic generator and a transducer. An acoustic sound wave or pulse is propagated through the solution and its velocity, i.e., the time of flight, is measured. The sound velocity through the solution is directly related to the solution temperature and to the concentration of the chemicals in the solution or, more appropriately, the volume ratio of the chemicals.
- The system includes a conduit system interconnecting the various components of the system. A
first chemical source 102, a secondchemical source 104, and a thirdchemical source 106 are provided. The first, second and third chemicals are introduced into the system throughconduits first chemical 102 into the system can be controlled by a regulation device (not shown) orpneumatic valve 114. The second and third chemicals are typically stored in a reservoir (not shown), and are fed intostorage tanks conduits valves vents - Chemical levels in the storage tanks can be maintained within predefined limits by known methods and apparatus, which can include maximum and
minimum level sensors valves inlet conduits valve valve - The
storage tanks main conduit 108 by aconduit main conduit 108 and through the system, dosing pumps 130, 132 are provided inconduits - The
first chemical 102 andsecond chemical 134 contact each other and are mixed in amixing zone 136 in the conduit system. The mixing zone preferably includes mixing means, which can include, for example, stirrers, baffles, a vortex breaker or the like, sufficient to mix the chemicals such that a homogeneous solution is obtained. In the case in which a gas is to be bubbled into a liquid, the mixing means can include, for example, a sparger. - Following the mixing step, the homogeneous first solution is directed to
first concentration sensor 140. As described above, the sensor can be a conductivity or acoustic signature sensor for an ionic solution, or an acoustic signature sensor for a non-ionic solution. Based on the measurement obtained with the first sensor, the flowrate of the first chemical or second chemical is automatically adjusted and controlled such that the proper formulation of the first solution is obtained. - Preferably, the system comprises a closed-loop control system, in which a signal from the
sensor 140 based on the measurement is directed to acontroller 142. Thecontroller 142 then sends a signal to theflow control valve 114 ordosing pump 130 to control the flow of the first or second chemical via a feed-back algorithm to arrive at the requisite concentration of the first solution. To minimize the number of runs and time required to reach the desired concentration,controller 142 can be programmed to retain the process settings from the previously formed solution. - Contemporaneous with the introduction of the first and second chemicals into
main conduit 108, the third chemical is continuously introduced into themain conduit 108 vialine 112, downstream offirst sensor 140. The third chemical is mixed with the first solution in a second mixing zone to form a second solution. To ensure homogeneity of the second solution, the second mixing zone preferably includes mixing means as described above with reference to the first mixing zone. - Following the mixing step, the homogeneous, second solution is directed to
second concentration sensor 146. As described above, the sensor can be a conductivity or acoustic signature sensor for an ionic solution, or an acoustic signature sensor for a non-ionic solution. Based on the measurement obtained with thesecond sensor 146, the flowrate of the first solution or the third chemical is adjusted such that the proper formulation of the second solution is obtained. - The flowrate of the first solution can be controlled via
control valve 148 disposed downstream from the first sensor and upstream from the point at which the first solution and third chemical are mixed. If the flowrate of the third chemical is to be controlled, thecontroller 142 can automatically regulate theoutput dosing pump 132. The control system described above with reference to the blending of the first solution is equally applicable to the second solution, and the same or a different controller from that used for blending the first solution can be employed. - Until the predetermined formulation is obtained for both the first and second solutions,
valve 152 which connects the blending system to the point of use remains closed, andvalve 150 which connects the blending system to waste is opened. Upon arriving at the desired concentration of the second solution,valve 150 is closed andvalve 152 is opened, allowing the blended solution to be directed to the point of use, for example, to a semiconductor processing tool. - Prior to performing the blending method in accordance with the invention, the first and second sensors are calibrated for the specific chemicals and solutions being blended. Conductivity sensors are calibrated in a manner well known in the industry. Initially, a zero point of the electrodeless conductivity sensor or acoustic signature sensor is attained by exposing the sensor to air until the sensor is entirely dry and the offset is adjusted until a 0.000 mS/cm conductivity is attained. Of course, the measure of conductivity may be expressed in other units such as S/cm or S/cm.
- Upon attaining the zero point, the sensor is placed in a solution of know concentration and the conductivity is measured at a series of different temperatures. The solutions' concentration may be verified by standard titration methods. Resulting concentration values are entered into controller or
analyzer 142 employed to continuously monitor and adjustdosing pumps - Alternatively
sensors main conduit 108 and a solution of known conductivity and assay is passed therethrough. Conductivity readings that are calibrated are taken and stored intocontroller 142. - Subsequent to calibrating the concentration sensors, the conductivity of each solution to be run through the system is calibrated in part. Each individual solution to be transmitted in the system is conveyed through a concentration sensor and a correlation between the sensor reading and the actual solution is carried out. To ensure correct readings the solution is verified by titration or other methods. From this data a plot of sensor reading versus actual concentration is generated. Temperature variations in the solution are accounted for, and a corresponding correction may be made by
controller 142. - Following the first and second solution calibration conductivity data points are entered into
controller 142, and employed to adjust the metering ofpumps - While the exemplary embodiment described above with reference to
FIG. 1 involves at least two chemicals and a blending step, the present invention is in no way limited thereto. The invention can readily be applied to the blending of as few as two chemicals in a single blending step, or with a single sensor any number of additional chemicals in the manner described above. For each additional chemical introduced into the mixture, an additional blending step and sensor are required. -
FIG. 2 illustrates asystem 200 which includes one ormore apparatuses 202 as described above for continuously blending solutions, as well as one or more semiconductor processing tools connected to receive the blended solutions. Startingchemicals 204 are introduced into blendingapparatus 202, which forms blendedsolution 206. - The processing tools can include, for example, one or more wet processing stations for cleaning and/or etching semiconductor wafers, as well as auxiliary stations, for example, a drying station. As illustrated, the treatment stations include a cleaning
station 208, a first rinsestation 210, a deglaze station 212, a final rinse station 214 and adryer 216. -
Cleaning station 208 is connected by a conduit to receive the blended solution formed by blendingapparatus 202. This solution can be, for example, a dilute hydrofluoric acid cleaning solution, formed by blending deionized water with concentrated hydrofluoric acid to form a first solution, and blending the first solution with a surfactant to form the cleaning solution. First and second rinsestations 210, 214 contain ultrapure deionized water, and deglaze station 212 contains, for example, a buffered hydrofluoric acid cleaning solution. - The one or
more semiconductor wafers 218 are held on a wafer support or in acassette 220. The wafers together with the support or cassette are conveyed between the workstations by arobotic transfer mechanism 222 or other conventional means of conveying such objects between the stations. While wafer transfer can be performed manually, the means for conveyance is preferably totally or partially automated. - First, the wafers are introduced into cleaning
station 208 to remove contaminants from the wafers. The wafers are then removed from cleaningstation 208 and transferred intofirst rinsing station 210 wherein the wafers are rinsed with deionized water to remove residual cleaning solution from the wafer surfaces. The wafers are next transferred into deglaze station 212 for the removal of native or other oxide films from the wafer surface. The wafers are then introduced into final rinse station 214 and finally todryer 216. The wafers are removed from the dryer and sent to subsequent processes to complete the device fabrication process. - It should be noted that the number or types of blending systems and treatment stations, as well as the types of chemicals employed, are not limited in any way to those discussed above with reference to the exemplary embodiment. In general, wet treatment operations in semiconductor manufacturing processes may vary widely from that illustrated in
FIG. 2 , either by eliminating one or more of the units shown or by adding or substituting units not shown. Persons of ordinary skill in the art can readily adapt the present invention to any such operations. - The following examples are provided to illustrate generation of an ultrapure solution formed by combining deionized water, ethylene diamine (EDA) and potassium hydroxide (KOH) according to one aspect of the invention and an ultrapure solution formed by combining deionized water with ammonium hydroxide and surfactant according to another aspect of the invention.
- A continuous blending apparatus as described above with reference to
FIG. 1 , configured with two AC toroid coils, was employed to blend a solution made up of deionized water, ethylene diamine (EDA) and potassium hydroxide (KOH). Prior to mixing the chemicals, the sensors were calibrated to a “zero point” as described above. - The operating parameters are established for the requisite first solution as shown in
FIG. 3 , where the conductivity is determined at different weight percent assay of EDA mixed with deionized water. The concentration values obtained are verified by titration and the conductivity values are entered ondisplay 154 ofcontroller 142. As the first solution of EDA is passed throughconduit 108 tosensor 140 an assay weight percent vs. conductivity correlation chart is generated showing the EDA range to be run. SeeFIG. 4 . Thus, to obtain a flow rate of 0.40% by weight of ethylene diamine assay in the first solution a conductivity of 0.551 mS/cm must be attained. A signal is sent fromcontroller 142 adjusts the flow ofdosing pump 130 based on conductivity. As illustrated inFIG. 5 , the solution is brought to specification in approximately 60 seconds. - Subsequently, the operating parameters for a solution of KOH and deionized water is carried out in the same manner, as described above with respect to the first solution. Note
FIGS. 6-8 . - Thereafter, the first and second solution concentration is derived by an equation in
controller 142, which proportionally increases or decreases the amount of second orthird chemical first chemical stream 102 based on the conductivity value set point. The amount of either chemical injected bydosing pump controller 142 in response to the conductivity value obtained from the sensors. Thus, a second solution having 0.50 weight percent potassium hydroxide assay is added to a first solution having 0.40 weight percent ethylene diamine establishes a conductivity 21.98 mS/cm. It is noted that this conductivity value is less than in the second solution having 0.50 weight percent of potassium hydroxide in water. Therein, the conductivity measurement is 22.03 mS/cm. -
FIG. 9 is a graph of weight percent KOH in the first solution and weight percent EDA in the second solution versus sample number. It can be seen that the solution reached the target concentrations by the seventh sample run, and thereafter the process runs were easily reproduced. The product solution was found to be very stable, with little adjustment of the dosing pumps being required thereafter. - A continuous blending of ionic and non-ionic chemicals is performed with reference to
FIG. 1 , whereinsensor 140 is a toroid coil conductivity sensor andsensor 146 is an acoustic signature sensor. An ionic ammonium hydroxide chemical is added to a deionized water chemical to form a first solution. The solution is calibrated as mentioned above in regard to Example 1, by correlating the percentage weight assay with the conductance of the solution. NoteFIG. 10 . Subsequently, a similar procedure is carried out with respect to a non-ionic surfactant solution. The values obtained are depicted inFIG. 11 . - A second, product block cleaning solution is formed by adding a third non-ionic surfactant to the first solution.
Dosing pump 132 is adjusted by an equation determined bycontroller 142 to reach a set point value. Thus,controller 142 proportionally increases or decreases the amount ofchemical 136 added based on the conductivity reported bysensor 146. As a result, a desired third chemical assay is attained in the second solution based on the ratio of the third chemical component to that of the first two chemical components as determined through conductance. SeeFIG. 12 . - The assay of the product is verified by analytical analysis for verification of the process. Process assay trends are monitored on
display 154 ofcontroller 142 and are actively adjusted based on the concentration desired. On entering the requisite ionic concentration for a certain application, and based on the conductivity reading of the concentration sensors,controller 142 adjusts the flow of the dosing pumps thereby calibrating the assay of each component to maintain the desired concentration. - While the invention has been described in detail with reference to specific embodiments thereof, it will be apparent to one skilled in the art that various changes and modifications can be made, and equivalents employed without departing from the scope of the claims.
Claims (13)
1. A method of continuously blending a chemical solution for use in semiconductor processing, comprising the steps of:
a) mixing a first chemical with a second chemical in a first mixing zone in a conduit system and in a real time controlled manner to provide a first solution having a predetermined formulation; the flowrate of the first chemical and the flowrate of the second chemical are continuously adjusted; the first solution formulation is continuously monitored;
b) mixing a third chemical with the first solution in a second mixing zone in said conduit system and in a real time controlled manner to provide a second solution having a predetermined formulation; the flowrate of the third chemical is continuously adjusted; second solution formulation is continuously monitored, wherein steps (a) and (b) are performed contemporaneously; and
c) mixing a fourth chemical with the second solution in a real time controlled manner to provide a third solution having a predetermined formulation; the flowrate of the fourth chemical and the flowrate of the second solution are continuously adjusted; the third solution is continuously monitored; and wherein step (c) is performed contemporaneously with steps (a) and (b).
2. The method of claim 1 , wherein step (a), the flowrate of the first chemical or the second chemical is controlled in response to a signal generated by a first sensor which monitors the first solution, and in step (b), the flowrate of the third chemical or the first solution is controlled in response to a signal generated by a second sensor with monitors the second solution.
3. The method of claim 2 , wherein the first sensor and the second sensor are of the same or different types, and are selected from the group consisting of conductivity sensors and acoustic signature sensors.
4. The method of claim 3 , wherein the first sensor and/or the second sensor is an AC toroid coil sensor.
5. The method of claim 3 , wherein the first solution and the second solution are ionic solutions, and the first sensor and the second sensor are conductivity sensors.
6. The method of claim 5 , wherein the conductivity sensor is an electrodeless conductivity sensor employing AC toroid coils.
7. The method of claim 3 , wherein one of the first solution and the second solution is a non-ionic solution and the other of the first solution and the second solution is an ionic solution.
8. The method of claim 1 , wherein the first chemical or the second chemical is deionized water.
9. The method of claim 1 , wherein the second solution having a predetermined formulation is directly introduced into a semiconductor processing tool.
10. The method of claim 1 , wherein the second mixing zone is arranged downstream from the first mixing zone.
11. A method of continuously blending a chemical solution on-site at a semiconductor manufacturing facility, comprising the steps of:
a) mixing a first chemical with a second chemical in a first mixing zone in a conduit system and in a real time controlled manner to provide a first solution having a predetermined formulation; the flowrate of the first chemical and the flowrate of the second chemical are continuously adjusted; the first solution formulation is continuously monitored;
b) mixing a third chemical with the first solution in a second mixing zone in said conduit system and in a real time controlled manner to provide a second solution having a predetermined formulation; the flowrate of the third chemical is continuously adjusted; the second solution formulation is continuously monitored; wherein steps (a) and (b) are performed contemporaneously;
c) introducing at least part of the second solution having a predetermined formulation into a semiconductor processing tool; and
d) mixing a fourth chemical with at least part of the second solution in a real time controlled manner to provide a third solution having a predetermined formulation; the flowrate of the fourth chemical is continuously adjusted; the third solution formulation is continuously monitored, and wherein step (d) is performed contemporaneously with steps (a) and (b).
12. The method of claim 11 , wherein the second solution having a predetermined formulation is directly introduced into a semiconductor processing tool.
13. The method of claim 11 , wherein at least part of the third solution having a predetermined formulation is directly introduced into a semiconductor processing tool.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/551,739 US20070047381A1 (en) | 1999-12-20 | 2006-10-23 | Method for continuously blending chemical solutions |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/468,411 US6799883B1 (en) | 1999-12-20 | 1999-12-20 | Method for continuously blending chemical solutions |
US10/938,570 US7529837B2 (en) | 2004-01-23 | 2004-09-13 | Device and method for changing instruction description, and storage medium storing program for changing instruction |
US11/551,739 US20070047381A1 (en) | 1999-12-20 | 2006-10-23 | Method for continuously blending chemical solutions |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/938,570 Continuation US7529837B2 (en) | 1999-12-20 | 2004-09-13 | Device and method for changing instruction description, and storage medium storing program for changing instruction |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/676,757 Division US8726515B2 (en) | 2003-04-02 | 2012-11-14 | Oil-impregnated sintered bearing and method of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070047381A1 true US20070047381A1 (en) | 2007-03-01 |
Family
ID=23859707
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/468,411 Expired - Lifetime US6799883B1 (en) | 1998-04-16 | 1999-12-20 | Method for continuously blending chemical solutions |
US10/939,570 Abandoned US20050029170A1 (en) | 1998-04-16 | 2004-09-13 | Method and apparatus for continuously blending chemical solutions |
US11/551,739 Abandoned US20070047381A1 (en) | 1999-12-20 | 2006-10-23 | Method for continuously blending chemical solutions |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/468,411 Expired - Lifetime US6799883B1 (en) | 1998-04-16 | 1999-12-20 | Method for continuously blending chemical solutions |
US10/939,570 Abandoned US20050029170A1 (en) | 1998-04-16 | 2004-09-13 | Method and apparatus for continuously blending chemical solutions |
Country Status (4)
Country | Link |
---|---|
US (3) | US6799883B1 (en) |
EP (1) | EP1110597A3 (en) |
SG (1) | SG106596A1 (en) |
TW (1) | TW458806B (en) |
Families Citing this family (92)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6799883B1 (en) * | 1999-12-20 | 2004-10-05 | Air Liquide America L.P. | Method for continuously blending chemical solutions |
US20070119816A1 (en) * | 1998-04-16 | 2007-05-31 | Urquhart Karl J | Systems and methods for reclaiming process fluids in a processing environment |
US7980753B2 (en) | 1998-04-16 | 2011-07-19 | Air Liquide Electronics U.S. Lp | Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system |
US7871249B2 (en) * | 1998-04-16 | 2011-01-18 | Air Liquide Electronics U.S. Lp | Systems and methods for managing fluids using a liquid ring pump |
US20070070803A1 (en) * | 1998-04-16 | 2007-03-29 | Urquhart Karl J | Point-of-use process control blender systems and corresponding methods |
US7905653B2 (en) * | 2001-07-31 | 2011-03-15 | Mega Fluid Systems, Inc. | Method and apparatus for blending process materials |
US6805791B2 (en) * | 2000-09-01 | 2004-10-19 | Applied Science And Technology, Inc. | Ozonated water flow and concentration control apparatus |
US6418958B1 (en) * | 2001-04-02 | 2002-07-16 | Betzdearborn, Inc. | Dual solid chemical feed system |
US7435369B2 (en) * | 2001-06-06 | 2008-10-14 | Bpb Plc | Method for targeted delivery of additives to varying layers in gypsum panels |
US6762832B2 (en) * | 2001-07-18 | 2004-07-13 | Air Liquide America, L.P. | Methods and systems for controlling the concentration of a component in a composition with absorption spectroscopy |
US6860138B1 (en) * | 2002-02-21 | 2005-03-01 | Taiwan Semiconductor Manufacturing Company | Real-time detection mechanism with self-calibrated steps for the hardware baseline to detect the malfunction of liquid vaporization system in AMAT TEOS-based Dxz chamber |
JP2003271218A (en) * | 2002-03-15 | 2003-09-26 | Toshiba Corp | Apparatus and system for manufacturing semiconductor, and substrate processing method |
US9283521B2 (en) * | 2002-06-14 | 2016-03-15 | Parker-Hannifin Corporation | Single-use manifold and sensors for automated, aseptic transfer of solutions in bioprocessing applications |
USRE49221E1 (en) | 2002-06-14 | 2022-09-27 | Parker Intangibles, Llc | Single-use manifolds for automated, aseptic handling of solutions in bioprocessing applications |
CN1332741C (en) * | 2002-07-19 | 2007-08-22 | 动力系统有限公司 | Method and apparatus for blending process materials |
DE10239189A1 (en) * | 2002-08-21 | 2004-03-04 | Endress + Hauser Flowtec Ag, Reinach | Device and method for mixing two fluids |
JP4512913B2 (en) * | 2003-04-07 | 2010-07-28 | 旭有機材工業株式会社 | Fluid mixing device |
US20050058016A1 (en) * | 2003-09-15 | 2005-03-17 | Smith Morris E. | Method to blend two or more fluids |
US8271139B2 (en) | 2003-10-17 | 2012-09-18 | Asahi Kasei Bioprocess, Inc. | Multi-stage accurate blending system and method |
JP4799843B2 (en) * | 2003-10-17 | 2011-10-26 | 三星電子株式会社 | Etching composition having high etching selectivity, manufacturing method thereof, selective etching method of oxide film using the same, and manufacturing method of semiconductor device |
US7668622B2 (en) * | 2004-03-30 | 2010-02-23 | Honeywell International Inc. | Efficient blending based on blending component availablity for a partial blend duration |
CN101426839A (en) * | 2004-03-31 | 2009-05-06 | 沃特劳斯公司 | Electronically controlled direct injection foam delivery system and method of regulating flow of foam into water stream based on conductivity measure |
US20060080041A1 (en) * | 2004-07-08 | 2006-04-13 | Anderson Gary R | Chemical mixing apparatus, system and method |
US7281840B2 (en) * | 2004-07-09 | 2007-10-16 | Tres-Ark, Inc. | Chemical mixing apparatus |
US20080172141A1 (en) * | 2004-07-08 | 2008-07-17 | Simpson Michael B | Chemical Mixing Apparatus, System And Method |
WO2006010121A2 (en) * | 2004-07-09 | 2006-01-26 | Entegris, Inc. | Closed-loop delivery system |
US7614410B2 (en) * | 2005-03-01 | 2009-11-10 | Hydrite Chemical Co. | Chemical concentration controller and recorder |
FI120163B (en) * | 2005-04-04 | 2009-07-15 | Metso Automation Oy | Changing and measuring consistency |
US20070109912A1 (en) * | 2005-04-15 | 2007-05-17 | Urquhart Karl J | Liquid ring pumping and reclamation systems in a processing environment |
US7857506B2 (en) * | 2005-12-05 | 2010-12-28 | Sencal Llc | Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications |
US10343939B2 (en) | 2006-06-06 | 2019-07-09 | Evoqua Water Technologies Llc | Ultraviolet light activated oxidation process for the reduction of organic carbon in semiconductor process water |
WO2007146671A2 (en) | 2006-06-06 | 2007-12-21 | Fluid Lines | Ultaviolet light activated oxidation process for the reduction of organic carbon in semiconductor process water |
US8634940B2 (en) * | 2006-10-31 | 2014-01-21 | Rockwell Automation Technologies, Inc. | Model predictive control of a fermentation feed in biofuel production |
WO2008077437A1 (en) * | 2006-12-22 | 2008-07-03 | Ecolab Inc. | Dosing apparatus for dosing a solid detergent composition being conductive in solution |
US20080201053A1 (en) * | 2007-02-20 | 2008-08-21 | Esco Technologies (Asia) Pte Ltd | System and method for mixed gas chamber with automatic recovery |
US20080217220A1 (en) * | 2007-03-06 | 2008-09-11 | Gary Reeves | Combination Liquid Chlorinator and Bio Stimulated Fertilizer Feeder |
US8753522B2 (en) | 2007-04-03 | 2014-06-17 | Evoqua Water Technologies Llc | System for controlling introduction of a reducing agent to a liquid stream |
US20080245737A1 (en) * | 2007-04-03 | 2008-10-09 | Siemens Water Technologies Corp. | Method and system for providing ultrapure water |
US8741155B2 (en) | 2007-04-03 | 2014-06-03 | Evoqua Water Technologies Llc | Method and system for providing ultrapure water |
US9365435B2 (en) | 2007-04-03 | 2016-06-14 | Evoqua Water Technologies Llc | Actinic radiation reactor |
US9365436B2 (en) | 2007-04-03 | 2016-06-14 | Evoqua Water Technologies Llc | Method of irradiating a liquid |
US8961798B2 (en) | 2007-04-03 | 2015-02-24 | Evoqua Water Technologies Llc | Method for measuring a concentration of a compound in a liquid stream |
US9725343B2 (en) | 2007-04-03 | 2017-08-08 | Evoqua Water Technologies Llc | System and method for measuring and treating a liquid stream |
EP2188753B1 (en) * | 2007-09-06 | 2018-11-07 | DEKA Products Limited Partnership | Processing system and method |
US8491726B2 (en) * | 2007-09-26 | 2013-07-23 | Tokyo Electron Limited | Liquid processing apparatus and process liquid supplying method |
JP5198187B2 (en) * | 2007-09-26 | 2013-05-15 | 東京エレクトロン株式会社 | Liquid processing apparatus and processing liquid supply method |
WO2009069090A2 (en) | 2007-11-27 | 2009-06-04 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Improved reclaim function for semiconductor processing systems |
US8191397B2 (en) * | 2007-12-12 | 2012-06-05 | Air Liquide Electronics U.S. Lp | Methods for checking and calibrating concentration sensors in a semiconductor processing chamber |
US20100039884A1 (en) * | 2008-08-13 | 2010-02-18 | Southern Pump & Tank Company, Llc | Fuel mixing system |
US8591730B2 (en) | 2009-07-30 | 2013-11-26 | Siemens Pte. Ltd. | Baffle plates for an ultraviolet reactor |
US9527010B2 (en) | 2009-09-25 | 2016-12-27 | Ge Healthcare Bio-Sciences Corp. | Separation system and method |
AU2010298776A1 (en) * | 2009-09-25 | 2012-03-15 | Ge Healthcare Bio-Sciences Ab | Method and system for preparation of liquid mixtures |
US20110110179A1 (en) * | 2009-10-30 | 2011-05-12 | Randall Richards | Methods and apparatus for mixing dairy animal treatment chemicals |
GB201002666D0 (en) * | 2010-02-17 | 2010-04-07 | Pursuit Dynamics Plc | Apparatus and method for entraining fluids |
DE102010031477A1 (en) * | 2010-07-16 | 2012-01-19 | Krones Aktiengesellschaft | Apparatus and method for blending and heat treating a liquid product |
US9423801B2 (en) | 2010-12-22 | 2016-08-23 | Colgate-Palmolive Company | Continuous manufacturing system |
EP2527301B1 (en) | 2011-05-26 | 2016-04-27 | Evoqua Water Technologies GmbH | Method and arrangement for a water treatment |
BR102012014252B1 (en) * | 2012-06-13 | 2024-02-27 | Profilática Produtos Odonto Médico Hospitalares S.A. | HIGH PRECISION AUTOMATIC DOSER FOR LIQUID DILUTION, PROCESS AND OPERATING SYSTEM |
WO2014018896A1 (en) * | 2012-07-27 | 2014-01-30 | Deka Products Limited Partnership | Control of conductivity in product water outlet for evaporation apparatus |
EP2898377B1 (en) * | 2012-09-18 | 2018-11-14 | Tetra Laval Holdings & Finance SA | A method and an apparatus for detecting a transition from a first phase to a second phase |
CN102890516A (en) * | 2012-10-09 | 2013-01-23 | 荣捷生物工程(苏州)有限公司 | System and method for controlling generated linear pH gradient solution |
US9566377B2 (en) | 2013-03-15 | 2017-02-14 | Fresenius Medical Care Holdings, Inc. | Medical fluid sensing and concentration determination in a fluid cartridge with multiple passageways, using a radio frequency device situated within a magnetic field |
US9772386B2 (en) | 2013-03-15 | 2017-09-26 | Fresenius Medical Care Holdings, Inc. | Dialysis system with sample concentration determination device using magnet and radio frequency coil assemblies |
US9713664B2 (en) | 2013-03-15 | 2017-07-25 | Fresenius Medical Care Holdings, Inc. | Nuclear magnetic resonance module for a dialysis machine |
US9433718B2 (en) | 2013-03-15 | 2016-09-06 | Fresenius Medical Care Holdings, Inc. | Medical fluid system including radio frequency (RF) device within a magnetic assembly, and fluid cartridge body with one of multiple passageways disposed within the RF device, and specially configured cartridge gap accepting a portion of said RF device |
US9597439B2 (en) | 2013-03-15 | 2017-03-21 | Fresenius Medical Care Holdings, Inc. | Medical fluid sensing and concentration determination using radio frequency energy and a magnetic field |
CN105264453A (en) * | 2013-04-22 | 2016-01-20 | 旭化成生物进程股份有限公司 | Multi-stage accurate blending system and method |
CN103898715B (en) * | 2014-03-27 | 2016-08-17 | 杭州神林电子有限公司 | Controller thrown in by detergent |
US10286135B2 (en) | 2014-03-28 | 2019-05-14 | Fresenius Medical Care Holdings, Inc. | Measuring conductivity of a medical fluid |
CA2918564C (en) | 2015-01-21 | 2023-09-19 | Evoqua Water Technologies Llc | Advanced oxidation process for ex-situ groundwater remediation |
US11161762B2 (en) | 2015-01-21 | 2021-11-02 | Evoqua Water Technologies Llc | Advanced oxidation process for ex-situ groundwater remediation |
US10213757B1 (en) * | 2015-10-23 | 2019-02-26 | Tetra Technologies, Inc. | In situ treatment analysis mixing system |
US20170223921A1 (en) * | 2016-02-08 | 2017-08-10 | Delaware Capital Formation, Inc. | On-site chemical blending and dispensing system |
US20160296902A1 (en) * | 2016-06-17 | 2016-10-13 | Air Liquide Electronics U.S. Lp | Deterministic feedback blender |
CN106621980A (en) * | 2017-01-13 | 2017-05-10 | 大连理工大学 | Vacuum mechanical and automatic mixing equipment |
DE102017104492A1 (en) * | 2017-03-03 | 2018-09-06 | Wiesheu Gmbh | Apparatus and method for providing cleaning fluid |
US10610659B2 (en) * | 2017-03-23 | 2020-04-07 | General Electric Company | Gas mixer incorporating sensors for measuring flow and concentration |
US10946160B2 (en) | 2017-03-23 | 2021-03-16 | General Electric Company | Medical vaporizer with carrier gas characterization, measurement, and/or compensation |
US10464032B2 (en) * | 2017-04-20 | 2019-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for providing deionized water with dynamic electrical resistivity |
CN108268064B (en) * | 2018-01-26 | 2021-07-30 | 上海康久消毒技术有限公司 | Ozone disinfectant water preparation machine with automatic water outlet concentration control system |
CN110220119B (en) * | 2019-06-04 | 2020-09-08 | 黑龙江兰德超声科技股份有限公司 | Oil well pipeline viscosity reduction device |
FR3102372B1 (en) * | 2019-10-24 | 2022-09-09 | Exel Ind | Process for dosing an injection product in a base product and associated installation |
US11318431B2 (en) | 2019-11-27 | 2022-05-03 | Diversified Fluid Solutions, Llc | On-demand in-line-blending and supply of chemicals |
US10990114B1 (en) | 2019-12-30 | 2021-04-27 | Marathon Petroleum Company Lp | Methods and systems for inline mixing of hydrocarbon liquids |
US11247184B2 (en) | 2019-12-30 | 2022-02-15 | Marathon Petroleum Company Lp | Methods and systems for spillback control of in-line mixing of hydrocarbon liquids |
US11559774B2 (en) | 2019-12-30 | 2023-01-24 | Marathon Petroleum Company Lp | Methods and systems for operating a pump at an efficiency point |
US11607654B2 (en) | 2019-12-30 | 2023-03-21 | Marathon Petroleum Company Lp | Methods and systems for in-line mixing of hydrocarbon liquids |
CN114177824A (en) * | 2020-09-14 | 2022-03-15 | 长鑫存储技术有限公司 | Monitoring feedback system and monitoring feedback method |
US11578836B2 (en) | 2021-03-16 | 2023-02-14 | Marathon Petroleum Company Lp | Scalable greenhouse gas capture systems and methods |
US11655940B2 (en) | 2021-03-16 | 2023-05-23 | Marathon Petroleum Company Lp | Systems and methods for transporting fuel and carbon dioxide in a dual fluid vessel |
US11447877B1 (en) | 2021-08-26 | 2022-09-20 | Marathon Petroleum Company Lp | Assemblies and methods for monitoring cathodic protection of structures |
US11686070B1 (en) | 2022-05-04 | 2023-06-27 | Marathon Petroleum Company Lp | Systems, methods, and controllers to enhance heavy equipment warning |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2152956A (en) * | 1937-01-07 | 1939-04-04 | Etzkorn Rudolf | Mixing system |
US4405656A (en) * | 1980-10-16 | 1983-09-20 | Canon Kabushiki Kaisha | Process for producing photoconductive member |
US5157332A (en) * | 1989-10-13 | 1992-10-20 | The Foxboro Company | Three-toroid electrodeless conductivity cell |
US5407526A (en) * | 1993-06-30 | 1995-04-18 | Intel Corporation | Chemical mechanical polishing slurry delivery and mixing system |
US5722442A (en) * | 1994-01-07 | 1998-03-03 | Startec Ventures, Inc. | On-site generation of ultra-high-purity buffered-HF for semiconductor processing |
US5755934A (en) * | 1994-01-07 | 1998-05-26 | Startec Ventures, Inc. | Point-of-use ammonia purification for electronic component manufacture |
US5785820A (en) * | 1994-01-07 | 1998-07-28 | Startec Ventures, Inc. | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
US5846387A (en) * | 1994-01-07 | 1998-12-08 | Air Liquide Electronics Chemicals & Services, Inc. | On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing |
US5951779A (en) * | 1997-07-09 | 1999-09-14 | Ses Co., Ltd. | Treatment method of semiconductor wafers and the like and treatment system for the same |
US5950675A (en) * | 1996-02-15 | 1999-09-14 | Fujikin Incorporated | Backflow prevention apparatus for feeding a mixture of gases |
US5990014A (en) * | 1998-01-07 | 1999-11-23 | Memc Electronic Materials, Inc. | In situ wafer cleaning process |
US6247838B1 (en) * | 1998-11-24 | 2001-06-19 | The Boc Group, Inc. | Method for producing a liquid mixture having a predetermined concentration of a specified component |
US6799883B1 (en) * | 1999-12-20 | 2004-10-05 | Air Liquide America L.P. | Method for continuously blending chemical solutions |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3402729A (en) * | 1967-08-04 | 1968-09-24 | Texaco Inc | Consistometer |
GB8521968D0 (en) * | 1985-09-04 | 1985-10-09 | British Petroleum Co Plc | Preparation of emulsions |
CH674319A5 (en) * | 1988-03-22 | 1990-05-31 | Miteco Ag | |
US5152252A (en) * | 1992-01-23 | 1992-10-06 | Autotrol Corporation | Water treatment control system for a boiler |
US5980836A (en) * | 1992-05-26 | 1999-11-09 | E. I. Du Pont De Nemours And Company | Apparatus for preparing low-concentration polyaluminosilicate microgels |
US5522660A (en) * | 1994-12-14 | 1996-06-04 | Fsi International, Inc. | Apparatus for blending and controlling the concentration of a liquid chemical in a diluent liquid |
WO1996039651A1 (en) | 1995-06-05 | 1996-12-12 | Startec Ventures, Inc. | System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing |
JP2001527697A (en) | 1995-06-05 | 2001-12-25 | スターテック・ベンチャーズ・インコーポレーテッド | On-site generation of ultra-high purity buffered HF for semiconductor processing |
FR2761902B1 (en) | 1997-04-11 | 1999-05-14 | Labeille Sa | ULTRA-PURE CHEMICAL DILUTION SYSTEM FOR THE MICRO-ELECTRONIC INDUSTRY |
FR2761896B1 (en) | 1997-04-11 | 1999-05-14 | Labeille Sa | PROCESS AND DEVICE FOR PRODUCING HIGH PURITY CHEMICALS FOR THE MICROELECTRONIC INDUSTRY |
JP3383184B2 (en) * | 1997-06-18 | 2003-03-04 | 株式会社アグルー・ジャパン | Method and apparatus for producing dilute solution |
US6224778B1 (en) * | 1998-03-18 | 2001-05-01 | Charles T. Peltzer | Method for manufacturing a system for mixing fluids |
BR9801134A (en) * | 1998-03-26 | 2006-11-14 | Renner Herrmann Sa | apparatus and process for the continuous preparation of a fluid with automatic adjustment of its properties |
US6224252B1 (en) * | 1998-07-07 | 2001-05-01 | Air Products And Chemicals, Inc. | Chemical generator with controlled mixing and concentration feedback and adjustment |
-
1999
- 1999-12-20 US US09/468,411 patent/US6799883B1/en not_active Expired - Lifetime
-
2000
- 2000-12-11 TW TW089126341A patent/TW458806B/en not_active IP Right Cessation
- 2000-12-15 EP EP00403566A patent/EP1110597A3/en not_active Withdrawn
- 2000-12-18 SG SG200007512A patent/SG106596A1/en unknown
-
2004
- 2004-09-13 US US10/939,570 patent/US20050029170A1/en not_active Abandoned
-
2006
- 2006-10-23 US US11/551,739 patent/US20070047381A1/en not_active Abandoned
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2152956A (en) * | 1937-01-07 | 1939-04-04 | Etzkorn Rudolf | Mixing system |
US4405656A (en) * | 1980-10-16 | 1983-09-20 | Canon Kabushiki Kaisha | Process for producing photoconductive member |
US5157332A (en) * | 1989-10-13 | 1992-10-20 | The Foxboro Company | Three-toroid electrodeless conductivity cell |
US5407526A (en) * | 1993-06-30 | 1995-04-18 | Intel Corporation | Chemical mechanical polishing slurry delivery and mixing system |
US5785820A (en) * | 1994-01-07 | 1998-07-28 | Startec Ventures, Inc. | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
US5755934A (en) * | 1994-01-07 | 1998-05-26 | Startec Ventures, Inc. | Point-of-use ammonia purification for electronic component manufacture |
US5722442A (en) * | 1994-01-07 | 1998-03-03 | Startec Ventures, Inc. | On-site generation of ultra-high-purity buffered-HF for semiconductor processing |
US5846387A (en) * | 1994-01-07 | 1998-12-08 | Air Liquide Electronics Chemicals & Services, Inc. | On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing |
US5950675A (en) * | 1996-02-15 | 1999-09-14 | Fujikin Incorporated | Backflow prevention apparatus for feeding a mixture of gases |
US5951779A (en) * | 1997-07-09 | 1999-09-14 | Ses Co., Ltd. | Treatment method of semiconductor wafers and the like and treatment system for the same |
US5990014A (en) * | 1998-01-07 | 1999-11-23 | Memc Electronic Materials, Inc. | In situ wafer cleaning process |
US6247838B1 (en) * | 1998-11-24 | 2001-06-19 | The Boc Group, Inc. | Method for producing a liquid mixture having a predetermined concentration of a specified component |
US6290384B1 (en) * | 1998-11-24 | 2001-09-18 | The Boc Group, Inc. | Apparatus for producing liquid mixture having predetermined concentration of a specific component |
US6799883B1 (en) * | 1999-12-20 | 2004-10-05 | Air Liquide America L.P. | Method for continuously blending chemical solutions |
Also Published As
Publication number | Publication date |
---|---|
US20050029170A1 (en) | 2005-02-10 |
US6799883B1 (en) | 2004-10-05 |
TW458806B (en) | 2001-10-11 |
EP1110597A2 (en) | 2001-06-27 |
SG106596A1 (en) | 2004-10-29 |
EP1110597A3 (en) | 2003-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6799883B1 (en) | Method for continuously blending chemical solutions | |
US5924794A (en) | Chemical blending system with titrator control | |
US20120300573A1 (en) | Point-of-use process control blender systems and corresponding methods | |
US5874049A (en) | Two-stage chemical mixing system | |
US7363115B2 (en) | Batch mixing method with first derivative homogeneity monitoring | |
US6146008A (en) | System for diluting ultrapure chemicals which is intended for the microelectronics industry | |
TWI445577B (en) | Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system | |
TWI428975B (en) | Systems and methods for reclaiming process fluids in a processing environment | |
TWI418398B (en) | Liquid ring pumping and reclamation systems in a processing environment | |
JP2002513178A (en) | Conductivity feedback control system in slurry preparation | |
KR101263537B1 (en) | Point-of-use process control blender systems and corresponding methods | |
WO2021108739A1 (en) | On-demand in-line-blending and supply of chemicals | |
US20040065547A1 (en) | Real-time component monitoring and replenishment system for multicomponent fluids | |
JPH10180076A (en) | Diluting method of acid or alkali original liquid and diluting device | |
US20090088909A1 (en) | Batch processing apparatus for processing work pieces | |
WO1996039651A1 (en) | System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing | |
EP1159658A1 (en) | Method and apparatus for flowing liquid temperature control | |
JP7264729B2 (en) | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD | |
TW200947171A (en) | Improved reclaim function for semiconductor processing systems | |
JPH0661136A (en) | Continuous automatic dilution device of developer | |
JPH1015379A (en) | Device for diluting strong acid | |
JPH0775727A (en) | Device for blending liquids | |
RU2071961C1 (en) | Method and device for automatically controlling process of preparing solutions in semicontinuous reactors | |
JPH11253787A (en) | Liquid diluting device | |
JP2005166882A (en) | Etching method and etching device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |