US20070065345A1 - Manufacturable single-chip hydrogen sensor - Google Patents
Manufacturable single-chip hydrogen sensor Download PDFInfo
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- US20070065345A1 US20070065345A1 US11/602,378 US60237806A US2007065345A1 US 20070065345 A1 US20070065345 A1 US 20070065345A1 US 60237806 A US60237806 A US 60237806A US 2007065345 A1 US2007065345 A1 US 2007065345A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—Specially adapted to detect a particular component
- G01N33/005—Specially adapted to detect a particular component for H2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/975—Substrate or mask aligning feature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/11—Automated chemical analysis
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/21—Hydrocarbon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/22—Hydrogen, per se
Abstract
A robust single-chip hydrogen sensor and a method for fabricating such a sensor. By utilizing an interconnect metallization material that is the same or similar to the material used to sense hydrogen, or that is capable of withstanding an etchant used to pattern a hydrogen sensing portion, device yields are improved over prior techniques.
Description
- This application is a divisional of, claims priority to, and hereby incorporates by reference in its entirety U.S. patent application Ser. No. 10/838,718, filed on May 3, 2004, which is a divisional of and claims priority to U.S. patent application Ser. No. 09/788,781, filed on Feb. 20, 2001, which application claims priority to and incorporates by reference U.S. Provisional Patent Application No. 60/183,602, titled “Robust PdNi Hydrogen Sensor,” filed on Feb. 18, 2000, and naming James M. O'Connor as an inventor.
- The present invention is related to hydrogen sensors, and more particularly, to a robust single-chip hydrogen sensor and method for manufacturing the same.
- During the early 1990s, Sandia National Laboratory developed a single-chip hydrogen sensor that utilized Palladium-Nickel (PdNi) metal films as hydrogen gas sensors. U.S. Pat. No. 5,279,795, naming Robert C. Hughes and W. Kent Schubert as inventors, assigned to the United States as represented by the U.S. Department of Energy, describes such a sensor and is incorporated by reference herein.
- One of the key benefits of the sensor described in the '795 patent is its ability to detect a dynamic range of hydrogen concentrations over at least six orders of magnitude. Prior solutions to the problem of detecting hydrogen concentrations had been generally limited to detecting low concentrations of hydrogen. These solutions include such technologies as metal-insulator-semiconductor (MIS) or metal-oxide-semiconductor (MOS) capacitors and field-effect-transistors (FET), as well as palladium-gated diodes.
- The hydrogen sensor described in the '795 patent was a notable advance in hydrogen-sensing technology. It was, however, primarily limited to an experimental laboratory environment due to the difficulties encountered in manufacturing such a sensor.
- In typical silicon fabrication facilities, metal films are first blanket-deposited across the entire wafer, and are subsequently patterned by an etch process. However, conventional etchants for PdNi also attack aluminum, which is normally present on the wafer surface as an interconnect metal before the PdNi film is deposited. Patterning the PDNI by etching would also attack the unprotected aluminum, destroying the sensor. Other non-conventional semiconductor fabrication techniques involving the use of a photoresistive material applied before the PdNi in a “lift-off”process have produced very low yields in tests performed by the assignee of the present invention. Low yields in the production of semiconductor devices typically translates to difficulties in producing a commercializable product.
- One solution to the above problems is described in U.S. patent application Ser. No. 09/729,147, titled “Robust Single-Chip Hydrogen Sensor,” assigned to Honeywell International Inc., and incorporated by reference herein. The technique disclosed is a lift-off process, in which an adhesion promoting layer, such as chromium, is provided to cause a sense-resistive layer, such as a PdNi layer, to adhere to an underlying base layer. As a result, during the lift-off process, there is a reduced likelihood of sensor portions being lifted off in conjunction with the portions actually intended to be removed. However, the use of chromium has been discovered to be prone to at least one disadvantage. The chromium has a tendency to affect the operation of hydrogen sensing transistors on the sensing chip. As a result, accuracy and/or sensing range may be affected.
- It would thus be desirable to provide a robust single-chip hydrogen sensor that is capable of sensing hydrogen concentrations over a broad range, such as from approximately 1% to approximately 100% concentrations.
- It would also be desirable for such a sensor to be efficiently manufacturable, so that costs are reduced and the sensor is producible in high enough yields to enable commercialization.
- It would be desirable for such a sensor to provide measurement results that approximate or improve on the results from previous hydrogen sensors.
- It would additionally be desirable to minimize sensor drift and to improve device-to-device and wafer-to-wafer repeatability.
- In accordance with an illustrative embodiment of the present invention, some of the problems associated with manufacturing a robust hydrogen sensor are addressed.
- According to a first embodiment, a silicon-based hydrogen sensor is provided. The sensor includes at least one hydrogen sensing portion composed of a first material and at least one interconnect metallization also composed of the first material. The first material is preferably, but need not be, a palladium nickel alloy. The interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. In a first aspect of this embodiment, the hydrogen sensing portion and the interconnect metallization are formed concurrently with one another. In a second aspect of the invention, the sensor further includes an underlying layer and at least one contact between the interconnect metallization and the underlying layer. The underlying layer may, for example, be composed primarily of silicon, and the contact may be a silicided contact.
- In a second embodiment, a silicon-based hydrogen sensor includes at least one hydrogen-sensing portion and at least one interconnect metallization. The hydrogen-sensing portion is patterned by a deposition, mask, and etch process, and the at least one interconnect metallization is composed of a material that is resistant to the deposition, mask, and etch process used to pattern the hydrogen-sensing portion. For example, the at least one hydrogen sensing portion may be composed of a palladium nickel alloy and the at least one interconnect metallization may be composed of a material that is relatively impervious to the hydrogen-sensing etch process, such as gold.
- In a third embodiment, a method for fabricating a silicon-based hydrogen sensor is provided. The method includes providing an interconnect metallization and a hydrogen sensing portion made of the same material. The material is preferably a palladium nickel alloy. The interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. In another aspect of the invention, the method further includes providing a silicided contact between the interconnect metallization and an underlying base portion. The silicided contact may be provided by masking the underlying base portion, etching a contact portion from the masked underlying base portion, depositing a contact material, masking the contact material, and sintering the contact material. Exemplary materials that may be used to provide the contact include cobalt, titanium, tungsten, platinum, tantalum, and molybdenum.
- In a fourth embodiment, a method for fabricating a single-chip hydrogen sensing-device is provided. The method includes forming a silicided contact on an underlying base portion, depositing a hydrogen sensing material over the silicided contact and the underlying base portion, masking a pattern in the hydrogen sensing material, and etching the hydrogen sensing material to form a hydrogen sensing portion and an interconnect metallization portion. In another aspect, the method may further include annealing the hydrogen sensing material. The interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. Forming the silicided contact may include depositing, etching, and sintering a first material, such as cobalt, titanium, tungsten, platinum, tantalum, and molybdenum.
- Presently preferred embodiments of the invention are described below in conjunction with the appended drawing figures, wherein like reference numerals refer to like elements in the various figures, and wherein:
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FIG. 1 is a simplified block diagram illustrating a robust single-chip hydrogen sensor according to an embodiment of the present invention; -
FIG. 2 is a block diagram illustrating a top view of a robust single-chip hydrogen sensor device according to a preferred embodiment of the present invention; -
FIG. 3 is a flow diagram illustrating a method for fabricating a robust single-chip hydrogen sensor according to an embodiment of the present invention; -
FIG. 4 is a flow diagram illustrating a method for fabricating a robust single-chip hydrogen sensor according to an embodiment of the present invention; -
FIG. 5 is a flow diagram illustrating a method for fabricating a robust single-chip hydrogen sensor according to an embodiment of the present invention; and -
FIG. 6 is a flow diagram illustrating a method for fabricating a single-chip hydrogen sensor, according to an embodiment of the present invention. -
FIG. 1 is a simplified block diagram illustrating a top view of a robust single-chip hydrogen sensor in accordance with an embodiment of the present invention. Thesensor 100 includes at least onesense resistor 102, at least onesense transistor 104, at least onetemperature sensor 106, and at least onetemperature control module 108 located in or on asubstrate 110. On-chip and/or external circuitry (not shown) may be included to assist in precisely regulating the temperature of thechip 100 using thetemperature sensor 106 and thetemperature control module 108. Similarly, the same external circuitry, or other external circuitry, may be used to obtain outputs from thesense resistor 102 and/or thesense transistor 104. - The
substrate 110 preferably is a bulk silicon substrate. Silicon enables the use of many common silicon semiconductor processing techniques, such as masks, implants, etchings, dopings, and others. - The
temperature control module 108 preferably includes one or more heater Field-Effect-Transistors (FETs) or other heating devices (for example, resistive heating elements) formed in or on thesubstrate 110. One or more cooling mechanisms may additionally or alternatively be included as part of thetemperature control module 108. Thetemperature control module 108 adjusts the temperature of thesensor 100 in response to temperature measurements received from thetemperature sensor 106 or associated external circuitry. - The
temperature sensor 106 is preferably a temperature sensing diode formed in or on thesubstrate 110. Other methods for sensing temperature may also be used. Thesense transistor 104 is used to sense hydrogen concentration levels in an environment in which thesensor 100 is placed. Thesense transistor 104 is preferably a PdNi-gate sense transistor that is fabricated in or on thesubstrate 110. Other types of sense transistors may also be used. Thesense transistor 104 may utilize Metal-Oxide-Semiconductor (MOS) or Metal-Insulator-Semiconductor (MIS) technology. In an alternative embodiment, thesense transistor 104 may instead be a sensing element, such as a sense capacitor. (In such a case, alternating current measurement techniques may need to be employed.) Thesense transistor 104 senses hydrogen concentration levels ranging from a first minimum concentration to a first maximum concentration. Typical values for the first minimum concentration and first maximum concentration are one part per million (ppm) and 1,000 ppm, respectively. Other minimum and maximum concentrations may also be possible for thesense transistor 104. - The
sense resistor 102 is preferably a PdNi film arrayed in a serpentine pattern fabricated in or on thesensor 100. Other materials besides PdNi may be used, such as various palladium silicides and polymeric sensing elements. The resistance of thesense resistor 102 changes in the presence of hydrogen, enabling detection of hydrogen concentration in a particular environment. Thesense resistor 102 is preferably operable to sense hydrogen levels ranging from a second minimum concentration to a second maximum concentration. Exemplary values for the second minimum concentration and second maximum concentration are 100 ppm and 1,000,000 ppm, respectively. Other minimums and maximums may also be possible. - For purposes of illustration and to maintain generality, no connections are shown, and no external circuitry is shown in
FIG. 1 . Connections are likely to exist between theresistor 102, thesense transistor 104, thetemperature sensor 106, thetemperature control module 108, and/or any external circuitry. Such connections may be made by a network of interconnect metallizations, for example. In the preferred embodiment, the interconnect metallizations are formed of the same material as the sense transistor and/or the sense resistor. Thus, if the sense resistor and sensor transistor are composed of a PdNi alloy, an interconnect metallization is also composed of a PdNi alloy. When the interconnect metallization and hydrogen sensing portion are composed of the same material, the interconnect metallization is preferably covered with an oxide or nitride to render the interconnect metallization resistance unchanged in the presence of hydrogen. In another embodiment, the interconnect metallization is formed of any material that is capable of surviving a subtractive etch process. For example, gold or various alloys including gold, may be a suitable interconnect material for a hydrogen sensor. Further details on preferred connection layouts are shown inFIG. 2 , described in further detail below. - Silicided contacts are preferably used to provide contacts to various components, such as the sources and drains of the sense transistor and the heater FET used in the temperature control module. Ideally, each silicided contact serves as an ohmic contact, such- that the potential difference across the contact is proportional to the current passing through. Metals such as cobalt, titanium, tungsten, platinum, tantalum, and molybdenum, may be used to make silicided contacts. In an alternative embodiment, a silicide is also or alternatively used to implement all or a portion of the interconnect metallizations described above.
- Also not shown in
FIG. 1 is an underlying, non-conductive layer that may be used to isolate thesense resistor 102, thesense transistor 104, thetemperature sensor 106, and/or thetemperature control module 108 from thesubstrate 110. The non-conductive layer may, for example, be a silicon nitride or oxide layer. As used throughout this description, the term “non-conductive” is intended to describe conductive characteristics when compared to a conductive material, such as aluminum, or a semiconductive material, such as silicon. “Non-conductive” is not intended to imply an actual inability to conduct electricity regardless of applied conditions. Also, as used herein, the term “interconnect metallization” will typically refer to a material that is conductive with respect to any non-conductive layers. - Operation of the
sensor 100 will now be briefly described. Thetemperature sensor 106 andtemperature control module 108 are used to regulate the operating temperature of thesensor 100 when sensing hydrogen. The temperature of thesensor 100 may, for example, be held at a constant sense temperature. Thetemperature sensor 106 andtemperature control module 108 may also be used to purge hydrogen and/or other gases, etc. after measurements are taken, by heating the chip to a purge temperature. In the preferred embodiment, thetemperature control module 108 heats the chip to approximately 80 degrees Celsius, as measured at thetemperature sensor 106. The purge temperature is preferably approximately 100 degrees Celsius. One or more feedback loops may be used to assist in accurately regulating the temperature using thetemperature sensor 106 and thetemperature control module 108. Such feedback loop(s) may be included in external circuitry, for example. When thesensor 100 is in a hydrogen-sensing mode, then thesense resistor 102 and thesense transistor 104 preferably sense hydrogen levels at overlapping ranges. This enables the combination of thesense resistor 102 and thesense transistor 104 to provide measurements of hydrogen concentration over a larger range than a single sense element might otherwise provide. The determination as to when to purge may be made by examining measurement outputs from thesense resistor 102 and/or thesense transistor 104. In the case of thesense resistor 102, the measurement output may be a particular resistance corresponding to the concentration of hydrogen gas in the environment of thesensor 100. Such a determination may be made by external circuitry and may be used to control thetemperature control module 108. -
FIG. 2 is a block diagram illustrating a top view of a single-chip hydrogen-sensingdevice 300, according to a preferred embodiment of the present invention. Thedevice 300 includes afirst sense resistor 302 a, asecond sense resistor 302 b, and athird sense resistor 302 c, to sense hydrogen concentrations at approximate first minimum concentrations and approximate first maximum concentrations. Afirst sense transistor 304 a, asecond sense transistor 304 b, and athird sense transistor 304 c may be used to sense hydrogen levels at second minimum concentrations and second maximum concentrations. - A
temperature sensing diode 306 is used to determine the temperature of thedevice 300. A first heater Field Effect Transistor (FET) 308 a and asecond heater FET 308 b are used to control the temperature of thedevice 300, so that the approximate temperature is 80 degrees Celsius during a hydrogen-sensing period and approximately 100 degrees Celsius during a purge period. Thetemperature sensing diode 306 and the heater FETs 308 a-b are used in conjunction with external circuitry (not shown) to provide temperature regulation. The sense resistors 302 a-c, the sense transistors 304 a-c, thetemperature sensing diode 306, and the heater FETs 308 a-b are located in and/or on abulk semiconductor substrate 310. Additional layers may be present on thesubstrate 310, and are not shown inFIG. 2 . For example, conductive and/or non-conductive layers may be deposited on one or more portions of thesubstrate 310. A series of left-side contacts 312 extend generally down the left side of the device and may be used to provide power, to receive measurements, and/or to control device operation. Similarly, right-side contacts 314 may be used to provide these same operations. In addition, the left-side contacts 312 and the right-side contacts 314 may be used for other functions, such as for testing thedevice 300. Special test elements, such as the test element 316 (and others resembling test element 316), may be located in or on thedevice 300 to enable verification that thedevice 300 is operating properly. Aninterconnection network 318 connects various components within thedevice 300. Most of the unreferenced components shown inFIG. 2 are test elements and/or interconnections between various referenced and unreferenced components. - The
device 300 includes multiple sense resistors 302 a-c, sense transistors 304 a-c, and heater FETs 308 a-b in order to provide redundancy. This enables thedevice 300 to operate in case one of the sensing mechanisms fails, and also enables improved accuracy due to more than one sensing element providing measurements and the ability to cross-check measurements. Other quantities of components within thedevice 300 may also be used without departing from the scope of the present invention. - The sense resistors 302 a-c and the gates of the sense transistors 304 a-c preferably include an alloy that resists the formation of a hydride phase of a catalytic metal contained in the alloy. The preferred alloy is a nickel and palladium alloy (PdNi). For example, an alloy of about 8% to 20% (by atom percentage) nickel (with the balance being palladium) may be used. Other alloy compositions and/or materials may also be used.
- PdNi is not typically used in semiconductor manufacturing. In typical silicon fabrication facilities, metal films are first blanket-deposited across the entire wafer and are subsequently patterned by an etch process. Conventional etchants for PdNi, however, also attack various interconnect metals, such as aluminum, which would likely destroy the sensor. Likewise, use of an adhesion promoting layer (such as chromium) under the sense-resistive layer, to prevent problems during a lift-off process, may affect the sense transistors 304 a-c. Thus, instead of using aluminum (or other similar metals) for an interconnect, and instead of using a lift-off process with an adhesion-promoting layer, the present invention uses a blanket-deposition and etching process. To avoid the undesirable effects caused by etchants on aluminum interconnects, an interconnect material capable of surviving subtractive etching is used. According to various embodiments of the present invention, the interconnect material is the same material used for hydrogen sensing. Thus, if a PdNi alloy is used for the sense resistors 302 a-c, then a similar or identical material may be used for the interconnect metallizations. The alloy composition may be varied to improve conductivity and/or other characteristics. Use of an identical alloy, may, however have economic and efficiency advantages. The interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. Alternatively, any other material that is impervious to the etchant used may also serve as the interconnect metallization material. Gold, for example, may be used for the interconnect metallization material. Advantages in cost and yield might be realizable through the use of the hydrogen sensing material (PdNi) for the interconnect metallizations, since it is possible to use a single patterning process for both the sensing elements and the interconnect metallizations.
- Silicided contacts are preferably used to provide contacts between the interconnect metallizations and various components, such as to the sources and drains of the sense transistor and the heater FET used in the temperature control module. Ideally, each silicided contact serves as an ohmic contact, such that the potential difference across the contact is proportional to the current passing through. As was described above with reference to
FIG. 1 , metals such as cobalt, titanium, tungsten, platinum, tantalum, and molybdenum, may be used to make silicided contacts. Other silicides may also be used. As an alternative, other materials providing a low resistance contact between a base layer (such as doped silicon) and an interconnect metallization may also be used. In another alternative embodiment, a silicide is also or alternatively used to implement all or a portion of the interconnect metallizations. -
FIG. 3 is a flow diagram illustrating amethod 400 for fabricating a robust single-chip hydrogen sensor, according to an embodiment of the present invention. Instep 402, an interconnect metallization composed of a first material is provided. Instep 404, a hydrogen sensing portion, also composed of the first material, is provided. The first material is preferably a PdNi alloy. The interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. The hydrogen sensor itself is preferably a single-chip sensor comprising a bulk silicon substrate, temperature control means, at least one sense transistor, and at least one sense resistor.FIG. 4 is a flow diagram illustrating amethod 450 for fabricating a robust single-chip hydrogen sensor, according to an embodiment of the present invention.Steps steps method 400. Instep 456, a silicided contact is provided between the interconnect metallization and an underlying base portion. As was the case for themethod 400, the interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. Preferably, the silicided contact may be provided by masking the underlying base portion, etching a contact portion from the masked underlying base portion, depositing a contact material, masking the contact material, and centering the contact material. The contact material is preferably one of the following: cobalt, titanium, tungsten, platinum, tantalum, and molybdenum. -
FIG. 5 is a flow diagram illustrating amethod 500 for fabricating a robust single-chip hydrogen sensor, according to an embodiment of the present invention. Instep 502, a silicided contact is formed on an underlying base portion. Instep 504, a hydrogen sensing material is deposited over the silicided contact and the underlying base portion. Instep 506, a pattern is masked in the hydrogen sensing material. Instep 508, the hydrogen sensing material is etched to form a hydrogen sensing portion and an interconnect metallization portion. Forming the silicided contact preferably involves depositing, etching, and centering one of the following materials: cobalt, titanium, tungsten, platinum, tantalum, and molybdenum. The interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. The underlying base portion preferably is one of the following: a semiconductor substrate, a conductive layer, a semiconductor layer, or a non-conductive layer.FIG. 6 is a flow diagram illustrating amethod 600 for fabricating a robust single-chip hydrogen sensor, according to an embodiment of the present invention. Steps 602-608 correspond respectively to steps 502-508 in themethod 500. Instep 610, the hydrogen sensing material is annealed, using any well known annealing process. As was the case for themethod 500, the interconnect metallization is preferably covered with an oxide or nitride to make the interconnect metallization inert. - TABLE 1 illustrates process steps that may be used to produce the single-chip hydrogen-sensing
device 300, according to a preferred embodiment of the present invention. The steps are preferably performed in order, from top-to-bottom, starting with the left column. The abbreviations correspond primarily to semiconductor processing steps. Such abbreviations should be readily apparent to those having skill in the relevant technology field.TABLE 1 Phos. Implant poly etch nitride 2 mask initial ox spacer ox nitride dry etch diff mask n+ mask BPSG diff etch n+ imp BPSG reflow p-well mask s/d implant contact mask p-well imp poly re-ox contact etch chan-stop imp p+ mask Co dep p-well drive p+ implant Co sinter nitride strip BF2 implant Co etch threshold imp h-gate mask Alloy gate ox h-gate implant split NiPd dep poly dep boe etchback NiPd mask poly dope h-gate oxidation 200A NiPd etch poly mask R&D nitride dep 200A Anneal - In Table 1, the last few steps (involving Co and NiPd) refer to making silicided contacts (cobalt silicide) and a combination NiPd interconnect metallization and sensing structure. The mask and etch steps performed prior to the cobalt deposition serve to confine the cobalt (and the cobalt silicide resulting after sintering) to the desired contact location. Other silicides (or other contact materials) may be formed in a similar manner. It should be noted that although Table 1 describes using only one NiPd deposition, mask, and etch process to form both the interconnect metallization and the sensing structure, a separate deposition, mask, and etch process could also be performed. For example, a separate deposition, mask, and etch process would be required if the interconnect metallization material was different from the hydrogen sensing material.
- In view of the wide variety of embodiments to which the principles of the present invention can be applied, it should be understood that the illustrated embodiments are exemplary only, and should not be taken as limiting the scope of the present invention. For example, the steps of the flow diagrams may be taken in sequences other than those described, and more or fewer elements may be used in the block diagrams.
- The claims should not be read as limited to the described order or elements unless stated to that effect. In addition, use of the term “means” in any claim is intended to invoke 35 U.S.C. §112, paragraph 6, and any claim without the word “means” is not so intended. Therefore, all embodiments that come within the scope and spirit of the following claims and equivalents thereto are claimed as the invention.
Claims (7)
1. A method for fabricating a silicon-based hydrogen sensor, comprising providing an interconnect metallization and a hydrogen sensing portion, wherein the interconnect metallization and the hydrogen sensing portion are both composed of a first material.
2. The method of claim 1 , wherein the first material is a palladium nickel alloy.
3. The method of claim 1 , further comprising covering the interconnect metallization with a material selected from the group consisting of an oxide and a nitride.
4. The method of claim 1 , wherein the silicon-based hydrogen sensor is a single chip sensor comprising a bulk silicon substrate, temperature control means, at least one sense transistor, and at least one sense resistor.
5. The method of claim 1 , further comprising providing a silicided contact between the interconnect metallization and an underlying base portion.
6. The method of claim 5 , wherein providing a silicided contact comprises:
masking the underlying base portion;
etching a contact portion through the masked underlying base portion;
depositing a contact material;
sintering the contact material; and
removing any unreacted contact material.
7. The method of claim 6 , wherein the contact material is selected from the group consisting of cobalt, titanium, tungsten, platinum, tantalum, and molybdenum.
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US11/602,378 US20070065345A1 (en) | 2000-02-18 | 2006-11-17 | Manufacturable single-chip hydrogen sensor |
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US18360200P | 2000-02-18 | 2000-02-18 | |
US09/788,781 US6730270B1 (en) | 2000-02-18 | 2001-02-20 | Manufacturable single-chip hydrogen sensor |
US10/838,718 US7189592B2 (en) | 2000-02-18 | 2004-05-03 | Manufacturable single-chip hydrogen sensor |
US11/602,378 US20070065345A1 (en) | 2000-02-18 | 2006-11-17 | Manufacturable single-chip hydrogen sensor |
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US10/838,718 Division US7189592B2 (en) | 2000-02-18 | 2004-05-03 | Manufacturable single-chip hydrogen sensor |
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US09/788,781 Expired - Fee Related US6730270B1 (en) | 2000-02-18 | 2001-02-20 | Manufacturable single-chip hydrogen sensor |
US10/838,718 Expired - Fee Related US7189592B2 (en) | 2000-02-18 | 2004-05-03 | Manufacturable single-chip hydrogen sensor |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US7897057B1 (en) * | 2001-09-04 | 2011-03-01 | Optech Ventures, Llc | Sensor for detection of gas such as hydrogen and method of fabrication |
US7287412B2 (en) * | 2003-06-03 | 2007-10-30 | Nano-Proprietary, Inc. | Method and apparatus for sensing hydrogen gas |
US20070240491A1 (en) * | 2003-06-03 | 2007-10-18 | Nano-Proprietary, Inc. | Hydrogen Sensor |
US20070125153A1 (en) * | 2005-10-21 | 2007-06-07 | Thomas Visel | Palladium-Nickel Hydrogen Sensor |
WO2006091756A2 (en) * | 2005-02-24 | 2006-08-31 | The Regents Of The University Of Colorado, A Body Corporate | Mis-based sensors with hydrogen selectivity |
US20060199271A1 (en) * | 2005-03-07 | 2006-09-07 | Ming-Ren Lian | Temperature feedback control for solid state gas sensors |
EP1910819A4 (en) * | 2005-08-03 | 2011-03-16 | Applied Nanotech Holdings Inc | Continuous range hydrogen sensor |
US7389675B1 (en) * | 2006-05-12 | 2008-06-24 | The United States Of America As Represented By The National Aeronautics And Space Administration | Miniaturized metal (metal alloy)/ PdOx/SiC hydrogen and hydrocarbon gas sensors |
US20080153174A1 (en) * | 2006-12-20 | 2008-06-26 | Galloway Douglas B | Catalytic alloy hydrogen sensor apparatus and process |
US20080154432A1 (en) * | 2006-12-20 | 2008-06-26 | Galloway Douglas B | Catalytic alloy hydrogen sensor apparatus and process |
US20080154433A1 (en) * | 2006-12-20 | 2008-06-26 | Galloway Douglas B | Catalytic Alloy Hydrogen Sensor Apparatus and Process |
US20080154434A1 (en) * | 2006-12-20 | 2008-06-26 | Galloway Douglas B | Catalytic Alloy Hydrogen Sensor Apparatus and Process |
KR100900904B1 (en) * | 2007-08-31 | 2009-06-03 | 연세대학교 산학협력단 | METHOD FOR MANUFACTURING HYDROGEN SENSOR USING Pd-Ni ALLOY THIN FILM AND HYDROGEN SENSOR MANUFACTURED BY THE METHOD |
US10042192B2 (en) * | 2016-11-28 | 2018-08-07 | Futurewei Technologies, Inc. | Electro-absorption modulator with local temperature control |
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-
2004
- 2004-05-03 US US10/838,718 patent/US7189592B2/en not_active Expired - Fee Related
-
2006
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US4740387A (en) * | 1983-02-07 | 1988-04-26 | Ricoh Company Ltd. | Low power gas detector |
US4721601A (en) * | 1984-11-23 | 1988-01-26 | Massachusetts Institute Of Technology | Molecule-based microelectronic devices |
US5367283A (en) * | 1992-10-06 | 1994-11-22 | Martin Marietta Energy Systems, Inc. | Thin film hydrogen sensor |
US5279795A (en) * | 1993-01-04 | 1994-01-18 | The United States Of America As Represented By The United States Department Of Energy | Extended range chemical sensing apparatus |
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US7189592B2 (en) | 2007-03-13 |
US20040206723A1 (en) | 2004-10-21 |
US6730270B1 (en) | 2004-05-04 |
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