US20070102118A1 - Method and apparatus for controlling temperature of a substrate - Google Patents
Method and apparatus for controlling temperature of a substrate Download PDFInfo
- Publication number
- US20070102118A1 US20070102118A1 US11/563,272 US56327206A US2007102118A1 US 20070102118 A1 US20070102118 A1 US 20070102118A1 US 56327206 A US56327206 A US 56327206A US 2007102118 A1 US2007102118 A1 US 2007102118A1
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- United States
- Prior art keywords
- pedestal assembly
- substrate
- substrate pedestal
- support member
- base
- Prior art date
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- Abandoned
Links
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Definitions
- Embodiments of the present invention generally relate to semiconductor substrate processing systems. More specifically, the invention relates to a method and apparatus for controlling temperature of a substrate in a semiconductor substrate processing system.
- a substrate is retained to a substrate pedestal by an electrostatic chuck during processing.
- the electrostatic chuck is coupled to a base of the pedestal by clamps, adhesive or fasteners.
- the chuck may be provided with an embedded electric heater, as well as be fluidly coupled to a source of backside heat transfer gas for controlling substrate temperature during processing.
- conventional substrate pedestals have insufficient means for controlling substrate temperature distribution across the diameter of the substrate. The inability to control substrate temperature uniformity has an adverse effect on process uniformity both within a single substrate and between substrates, device yield and overall quality of processed substrates.
- the present invention generally is a method and apparatus for controlling temperature of a substrate during processing the substrate in a semiconductor substrate processing apparatus.
- the method and apparatus enhances temperature control across the diameter of a substrate, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of the temperature profile of a workpiece is desirable.
- a substrate pedestal assembly in one embodiment, includes a support member that is coupled to a base using a material layer.
- the material layer has at least two regions having different coefficients of thermal conductivity.
- the support member is an electrostatic chuck.
- a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby facilitating control of the temperature profile of a substrate disposed on the support member.
- FIG. 1A is a schematic diagram of an exemplary semiconductor substrate processing apparatus comprising a substrate pedestal in accordance with one embodiment of the invention
- FIGS. 1B-1C are partial cross-sectional views of embodiments of a substrate pedestal having gaps formed in different locations in a material layer of the substrate pedestal.
- FIG. 2 is a schematic cross-sectional view of the substrate pedestal taken along a line 2 - 2 of FIG. 1A ;
- FIG. 3 is a schematic partial cross-sectional view of another embodiment of the invention.
- FIG. 4 is a schematic partial cross-sectional view of another embodiment of the invention.
- FIG. 5 is a schematic partial cross-sectional view of yet another embodiment of the invention.
- FIG. 6 is a flow diagram of one embodiment of a method for controlling temperature of a substrate disposed on a substrate pedestal.
- the present invention generally is a method and apparatus for controlling temperature of a substrate during processing.
- a semiconductor substrate processing apparatus such as, e.g., a processing reactor (or module) of a CENTURA® integrated semiconductor wafer processing system, available from Applied Materials, Inc. of Santa Clara, Calif.
- the invention may be utilized in other processing systems, including etch, deposition, implant and thermal processing, or in other application where control of the temperature profile of a substrate or other workpiece is desirable.
- FIG. 1 depicts a schematic diagram of an exemplary etch reactor 100 having one embodiment of a substrate pedestal assembly 116 that may illustratively be used to practice the invention.
- the particular embodiment of the etch reactor 100 shown herein is provided for illustrative purposes and should not be used to limit the scope of the invention.
- Etch reactor 100 generally includes a process chamber 110 , a gas panel 138 and a controller 140 .
- the process chamber 110 includes a conductive body (wall) 130 and a ceiling 120 that enclose a process volume. Process gasses are provided to the process volume of the chamber 110 from the gas panel 138 .
- the controller 140 includes a central processing unit (CPU) 144 , a memory 142 , and support circuits 146 .
- the controller 140 is coupled to and controls components of the etch reactor 100 , processes performed in the chamber 110 , as well as may facilitate an optional data exchange with databases of an integrated circuit fab.
- the ceiling 120 is a substantially flat dielectric member.
- Other embodiments of the process chamber 110 may have other types of ceilings, e.g., a dome-shaped ceiling.
- an antenna 112 comprising one or more inductive coil elements (two co-axial coil elements 112 A and 112 B are illustratively shown).
- the antenna 112 is coupled, through a first matching network 170 , to a radio-frequency (RF) plasma power source 118 .
- RF radio-frequency
- the substrate pedestal assembly 116 includes a support member 126 , a thermoconductive layer 134 , a base 114 , a collar ring 152 , a joint ring 154 , a spacer 178 , a ground sleeve 164 and a mount assembly 162 .
- the mounting assembly 162 couples the base 114 to the process chamber 110 .
- the base 114 is generally formed from ceramic or similar dielectric material.
- the base 114 further comprises at least one optional embedded heater 158 (one heater 158 is illustratively shown), at least one optional embedded insert 168 (one annular insert 168 is illustratively shown), and a plurality of optional conduits 160 fluidly coupled to a source 182 of a heating or cooling liquid.
- the base 114 is further thermally separated from the ground sleeve 164 using an optional spacer 178 .
- the conduits 160 and heater 158 may be utilized to control the temperature of the base 114 , thereby heating or cooling the support member 126 , thereby controlling, in part, the temperature of a substrate 150 disposed on the support member 126 during processing.
- the insert 168 is formed from a material having a different coefficient of thermal conductivity than the material of the adjacent regions of the base 114 .
- the inserts 168 has a smaller coefficient of thermal conductivity than the base 114 .
- the inserts 168 may be formed from a material having an anisotropic (i.e. direction-dependent coefficient of thermal conductivity). The insert 168 functions to locally change the rate of heat transfer between the support member 126 through the base 114 to the conduits 160 relative to the rate of heat transfer though neighboring portions of the base 114 not having an insert 168 in the heat transfer path.
- the temperature profile of the support member 126 , and the substrate 150 seated thereon may be controlled.
- the insert 168 is depicted in FIG. 1 shaped as an annular ring, the shape of the insert 168 may take any number of forms.
- the thermoconductive layer 134 is disposed on a chuck supporting surface 180 of the base 114 and facilitates thermal coupling (i.e., heat exchange) between the support member 126 and the base 114 .
- the thermoconductive layer 134 is an adhesive layer that mechanically bonds the support member 126 to member supporting surface 180 .
- the substrate pedestal assembly 116 may include a hardware (e.g., clamps, screws, and the like) adapted for fastening the support member 126 to the base 114 .
- Temperature of the support member 126 and the base 114 is monitored using a plurality of sensors (not shown), such as, thermocouples and the like, that are coupled to a temperature monitor 174 .
- the support member 126 is disposed on the base 114 and is circumscribed by the rings 152 , 154 .
- the support member 126 may be fabricated from aluminum, ceramic or other materials suitable for supporting the substrate 150 during processing.
- the substrate 150 may rest upon the support member 126 by gravity, or alternatively be secured thereto by vacuum, electrostatic force, mechanical clamps and the like.
- the support member 126 is an electrostatic chuck 188 .
- the electrostatic chuck 188 is generally formed from ceramic or similar dielectric material and comprises at least one clamping electrode (not shown) controlled using a power supply 128 .
- the electrostatic chuck 188 may comprise at least one RF electrode (not shown) coupled, through a second matching network 124 , to a power source 122 of substrate bias, and may also include at least one embedded heater (not shown) controlled using a power supply 132 .
- the electrostatic chuck 188 may further comprise a plurality of gas passages (not shown), such as grooves, that are formed in a substrate supporting surface 176 of the chuck and fluidly coupled to a source 148 of a heat transfer (or backside) gas.
- the backside gas e.g., helium (He)
- He helium
- the substrate supporting surface 176 of the electrostatic chuck is provided with a coating resistant to the chemistries and temperatures used during processing the substrates.
- the support member 126 comprises at least one embedded insert 166 (one annular insert 166 is illustratively shown) formed from at least one material having a different coefficient of thermal conductivity than the material(s) of adjacent regions of the support member 126 .
- the inserts 166 are formed from materials having a smaller coefficient of thermal conductivity than the material(s) of the adjacent regions.
- the inserts 166 may be formed from materials having an anisotropic coefficient of thermal conductivity.
- at least one insert 166 may be disposed coplanar with the substrate supporting surface 176 .
- the thermal conductivity, as well as the shape, dimensions, location, and number of inserts 166 in the support member 126 may be selectively chosen to control the heat transfer through the pedestal assembly 116 to achieve, in operation, a pre-determined pattern of the temperature distribution on the substrate supporting surface 176 of the support member 126 and, as such, across the diameter of the substrate 150 .
- the thermoconductive layer 134 comprises a plurality of material regions (two annular regions 102 , 104 and circular region 106 are illustratively shown), at least two of which having different coefficients of thermal conductivity.
- Each region 102 , 104 , 108 may be formed from at least one material having a different coefficient of thermal conductivity than the material(s) of adjacent regions of the thermoconductive layer 134 .
- one or more of the materials comprising the regions 102 , 104 , 106 may have an anisotropic coefficient of thermal conductivity.
- coefficients of thermal conductivity of materials in the layer 134 in the directions orthogonal or parallel to the member supporting surface 180 may differ from the coefficients in at least one other direction.
- the coefficient of thermal conductivity between the regions 102 , 104 , 106 of the layer 134 may be selected to promote laterally different rates of heat transfer between the chuck 126 and base 114 , thereby controlling the temperature distribution across the diameter of the substrate 150 .
- gaps 190 (as shown in FIG. 2A ) maybe provided between at least two adjacent regions of the thermoconductive layer 134 .
- gaps 190 may form either gas-filled or vacuumed volumes having pre-determined form factors.
- a gap 190 may alternatively be formed within a region of the layer 134 (as shown in FIG. 1C ).
- FIG. 2 depicts a schematic cross-sectional view of the substrate pedestal taken along a line 2 - 2 in FIG. 1A .
- the thermoconductive layer 134 illustratively comprises the annular regions 102 , 104 and the circular region 106 .
- the layer 134 may comprise either more or less than three regions, as well as regions having different form factors, for example, the regions may be arranged as grids, radially oriented shapes, and polar arrays among others.
- the regions of the thermoconductive layer 134 may be composed from materials (e.g., adhesive materials) applied in a form of a paste that is further developed into a hard adhesive compound, as well as in a form of an adhesive tape or an adhesive foil.
- Thermal conductivity of the materials in the thermoconductive layer 134 may be selected in a range from 0.01 to 200 W/mK and, in one exemplary embodiment, in a range from 0.1 to 10 W/mK.
- the adjacent regions have a difference in thermal conductivities in the range of about 0.1 to 10 W/mK, and may have a difference in conductivity between an inner most and out most regions of the layer 134 of about 0.1 to about 10 W/mK.
- suitable adhesive materials include, but not limited to, pastes and tapes comprising acrylic and silicon based compounds.
- the adhesive materials may additionally include at least one thermally conductive ceramic filler, e.g., aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and titanium diboride (TiB 2 ), and the like.
- a thermally conductive ceramic filler e.g., aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and titanium diboride (TiB 2 ), and the like.
- a thermally conductive ceramic filler e.g., aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and titanium diboride (TiB 2 ), and the like.
- An adhesive tape suitable for the conductive layer 134 is sold under the tradename THERMATTACH®, available from Chomerics, a division of Parker Hannifin Corporation, located in Wolburn, Mass.
- thermoconductive layer 134 the thermal conductivity, as well as the form factor, dimensions, and a number of regions having the pre-determined coefficients of thermal conductivity may be selectively chosen to control the heat transfer between the electrostatic chuck 126 and the base 114 to achieve, in operation, a pre-determined pattern of the temperature distribution on the substrate supporting surface 176 of the chuck and, as such, in the substrate 150 .
- one or more channels 108 are provided to flow a heat transfer medium therethrough.
- the channels 108 are coupled through the base 114 to a source 150 of heat transfer medium, such as a cooling gas.
- suitable cooling gases include helium and nitrogen, among others.
- the cooling gas disposed in the channels 108 is part of the heat transfer path between the chuck 126 and base 114 , the position of the channels 108 , and the pressure, flow rate, temperature, density and composition of the heat transfer medium of cooling gas provided, provides enhanced control of the heat transfer profile through the pedestal assembly 116 . Moreover, as the density and flow rate of gas in the channel 108 may be controlled in-situ during processing of substrate 150 , the temperature control of the substrate 150 may be changed during processing to further enhance processing performance.
- one or more sources of cooling gas may be coupled to the channels 108 in a manner such that the types, pressures and/or flow rate of cooling gases within individual channels 108 may be independently controller, thereby facilitating an even greater level of temperature control.
- the channels 108 are depicted as formed in the member supporting surface 180 .
- the channels 108 may be formed at least partially in the member supporting surface 180 , at least partially in the bottom surface of the support member 126 , or at least partially in the thermally conductive layer 134 , along with combinations thereof.
- between about 2 to 10 channels 108 are disposed in the pedestal assembly 116 and provide with the selectivity maintained at a pressure between about 760 Torr (atmospheric pressure) to about 10 Torr.
- at least one of the channels 108 may be partially or entirely formed in the electrostatic chuck 126 , as illustrated in FIGS. 3-4 . More specifically, FIG.
- FIG. 3 depicts a schematic diagram of a portion of the substrate pedestal assembly 116 where the channels 108 are formed entirely in the electrostatic chuck 126 .
- FIG. 4 depicts a schematic diagram of a portion of the substrate pedestal assembly 116 where the channels 108 are partially formed in the base 114 and, partially, in the electrostatic chuck 126 .
- FIG. 5 depicts a schematic diagram of a portion of the substrate pedestal assembly 116 where the channels 108 are formed in the thermoconductive layer 134 . Although in FIG. 5 the channels are shown disposed between different regions 102 , 104 , 106 of the thermoconductive layer 134 , the one or more of the channels may be formed through one or more of the regions 102 , 104 , 106 .
- At least one of the location, shape, dimensions, and number of the channels 108 and inserts 166 , 168 as well as the thermal conductivity of the inserts 166 , 168 and gas disposed in the channels 108 may be selectively chosen to control the heat transfer between the support member 126 to the base 114 to achieve, in operation, a pre-determined pattern of the temperature distribution on the substrate supporting surface 176 of the chuck 126 and, as such, control the temperature profile of the substrate 150 .
- the pressure of the cooling gas in at least one channel 108 , as well as the flow of the cooling liquid in at least one conduit 156 may also be selectively controlled to achieve and/or enhance temperature control of the substrate.
- the heat transfer rate may also be controlled by individually controlling the type of gas, pressure and/or flow rate between respective channels 108 .
- the pre-determined pattern of the temperature distribution in the substrate 150 may be achieved using individual or combinations of the described control means, e.g., the thermoconductive layer 134 , the inserts 166 , 168 , channels 108 , conduits 160 , the pressure of cooling gas in the channels 108 , and the flow of the cooling liquid in the conduits 160 .
- pre-determined patterns of the temperature distribution on the substrate supporting surface 176 and in the substrate 150 may additionally be selectively controlled to compensate for non-uniformity of the heat fluxes originated, during processing the substrate 150 , by a plasma of the process gas and/or substrate bias.
- FIG. 6 depicts a flow diagram of one embodiment of an inventive method for controlling temperature of a substrate processed in a semiconductor substrate processing apparatus as a process 600 .
- the process 600 illustratively includes the processing steps performed upon the substrate 150 during processing in the reactor 100 described in the embodiments above. It is contemplated that the process 600 may be performed in other processing systems.
- the process 600 starts at step 601 and proceeds to step 602 .
- the substrate 150 is transferred to the pedestal assembly 116 disposed in the process chamber 110 .
- the substrate 150 is positioned (e.g., using a substrate robot, not shown) on the substrate supporting surface 176 of the electrostatic chuck 188 .
- the power supply 132 engages the electrostatic chuck 188 to clamp the substrate 150 to the supporting surface 176 of the chuck 188 .
- the substrate 150 is processed (e.g., etched) in the process chamber 110 in accordance with a process recipe executed as directed by the controller 140 .
- the substrate pedestal assembly 116 facilitates a pre-determined pattern of temperature distribution in the substrate 150 , utilizing one or more of the temperature control attributes of the pedestal assembly 116 discussed in reference to FIGS. 1-5 above.
- the rate and/or profile of heat transferred through the chuck 114 during step 608 may be adjusted in-situ by changing one or more of the characteristics of the gas present in one or more of the channels 108 .
- the power supply 132 disengages the electrostatic chuck 188 and, as such, de-chucks the substrate 150 that is further removed from the process chamber 110 .
- the process 600 ends.
Abstract
A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.
Description
- This application is a divisional of U.S. patent application Ser. No. 10/960,874, filed Oct. 7, 2004, which is incorporated by reference in its entirety.
- 1. Field of the Invention
- Embodiments of the present invention generally relate to semiconductor substrate processing systems. More specifically, the invention relates to a method and apparatus for controlling temperature of a substrate in a semiconductor substrate processing system.
- 2. Description of the Related Art
- In manufacture of integrated circuits, precise control of various process parameters is required for achieving consistent results within a substrate, as well as the results that are reproducible from substrate to substrate. During processing, changes in the temperature and temperature gradients across the substrate may be detrimental to material deposition, etch rate, step coverage, feature taper angles, and other parameters of semiconductor devices. As such, generation of the pre-determined pattern of temperature distribution across the substrate is one of critical requirements for achieving high yield.
- In some processing applications, a substrate is retained to a substrate pedestal by an electrostatic chuck during processing. The electrostatic chuck is coupled to a base of the pedestal by clamps, adhesive or fasteners. The chuck may be provided with an embedded electric heater, as well as be fluidly coupled to a source of backside heat transfer gas for controlling substrate temperature during processing. However, conventional substrate pedestals have insufficient means for controlling substrate temperature distribution across the diameter of the substrate. The inability to control substrate temperature uniformity has an adverse effect on process uniformity both within a single substrate and between substrates, device yield and overall quality of processed substrates.
- Therefore, there is a need in the art for an improved method and apparatus for controlling temperature of a substrate during processing the substrate in a semiconductor substrate processing apparatus.
- The present invention generally is a method and apparatus for controlling temperature of a substrate during processing the substrate in a semiconductor substrate processing apparatus. The method and apparatus enhances temperature control across the diameter of a substrate, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of the temperature profile of a workpiece is desirable.
- In one embodiment of the invention, a substrate pedestal assembly is provided. The pedestal assembly includes a support member that is coupled to a base using a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby facilitating control of the temperature profile of a substrate disposed on the support member.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1A is a schematic diagram of an exemplary semiconductor substrate processing apparatus comprising a substrate pedestal in accordance with one embodiment of the invention; -
FIGS. 1B-1C are partial cross-sectional views of embodiments of a substrate pedestal having gaps formed in different locations in a material layer of the substrate pedestal. -
FIG. 2 is a schematic cross-sectional view of the substrate pedestal taken along a line 2-2 ofFIG. 1A ; -
FIG. 3 is a schematic partial cross-sectional view of another embodiment of the invention; -
FIG. 4 is a schematic partial cross-sectional view of another embodiment of the invention; and -
FIG. 5 is a schematic partial cross-sectional view of yet another embodiment of the invention; and -
FIG. 6 is a flow diagram of one embodiment of a method for controlling temperature of a substrate disposed on a substrate pedestal. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures.
- The present invention generally is a method and apparatus for controlling temperature of a substrate during processing. Although invention is illustratively described in a semiconductor substrate processing apparatus, such as, e.g., a processing reactor (or module) of a CENTURA® integrated semiconductor wafer processing system, available from Applied Materials, Inc. of Santa Clara, Calif., the invention may be utilized in other processing systems, including etch, deposition, implant and thermal processing, or in other application where control of the temperature profile of a substrate or other workpiece is desirable.
-
FIG. 1 depicts a schematic diagram of anexemplary etch reactor 100 having one embodiment of asubstrate pedestal assembly 116 that may illustratively be used to practice the invention. The particular embodiment of theetch reactor 100 shown herein is provided for illustrative purposes and should not be used to limit the scope of the invention. -
Etch reactor 100 generally includes aprocess chamber 110, agas panel 138 and acontroller 140. Theprocess chamber 110 includes a conductive body (wall) 130 and aceiling 120 that enclose a process volume. Process gasses are provided to the process volume of thechamber 110 from thegas panel 138. - The
controller 140 includes a central processing unit (CPU) 144, amemory 142, andsupport circuits 146. Thecontroller 140 is coupled to and controls components of theetch reactor 100, processes performed in thechamber 110, as well as may facilitate an optional data exchange with databases of an integrated circuit fab. - In the depicted embodiment, the
ceiling 120 is a substantially flat dielectric member. Other embodiments of theprocess chamber 110 may have other types of ceilings, e.g., a dome-shaped ceiling. Above theceiling 120 is disposed anantenna 112 comprising one or more inductive coil elements (twoco-axial coil elements antenna 112 is coupled, through a first matchingnetwork 170, to a radio-frequency (RF)plasma power source 118. - In one embodiment, the
substrate pedestal assembly 116 includes asupport member 126, athermoconductive layer 134, abase 114, acollar ring 152, ajoint ring 154, aspacer 178, aground sleeve 164 and amount assembly 162. Themounting assembly 162 couples thebase 114 to theprocess chamber 110. Thebase 114 is generally formed from ceramic or similar dielectric material. In the depicted embodiment, thebase 114 further comprises at least one optional embedded heater 158 (oneheater 158 is illustratively shown), at least one optional embedded insert 168 (oneannular insert 168 is illustratively shown), and a plurality ofoptional conduits 160 fluidly coupled to asource 182 of a heating or cooling liquid. In this embodiment, thebase 114 is further thermally separated from theground sleeve 164 using anoptional spacer 178. - The
conduits 160 andheater 158 may be utilized to control the temperature of thebase 114, thereby heating or cooling thesupport member 126, thereby controlling, in part, the temperature of asubstrate 150 disposed on thesupport member 126 during processing. - The
insert 168 is formed from a material having a different coefficient of thermal conductivity than the material of the adjacent regions of thebase 114. Typically, theinserts 168 has a smaller coefficient of thermal conductivity than thebase 114. In a further embodiment, theinserts 168 may be formed from a material having an anisotropic (i.e. direction-dependent coefficient of thermal conductivity). Theinsert 168 functions to locally change the rate of heat transfer between thesupport member 126 through thebase 114 to theconduits 160 relative to the rate of heat transfer though neighboring portions of thebase 114 not having aninsert 168 in the heat transfer path. Thus, by controlling the number, shape, size, position and coefficient of heat transfer of the inserts, the temperature profile of thesupport member 126, and thesubstrate 150 seated thereon, may be controlled. Although theinsert 168 is depicted inFIG. 1 shaped as an annular ring, the shape of theinsert 168 may take any number of forms. - The
thermoconductive layer 134 is disposed on achuck supporting surface 180 of thebase 114 and facilitates thermal coupling (i.e., heat exchange) between thesupport member 126 and thebase 114. In one exemplary embodiment, thethermoconductive layer 134 is an adhesive layer that mechanically bonds thesupport member 126 tomember supporting surface 180. Alternatively (not shown), thesubstrate pedestal assembly 116 may include a hardware (e.g., clamps, screws, and the like) adapted for fastening thesupport member 126 to thebase 114. Temperature of thesupport member 126 and thebase 114 is monitored using a plurality of sensors (not shown), such as, thermocouples and the like, that are coupled to atemperature monitor 174. - The
support member 126 is disposed on thebase 114 and is circumscribed by therings support member 126 may be fabricated from aluminum, ceramic or other materials suitable for supporting thesubstrate 150 during processing. Thesubstrate 150 may rest upon thesupport member 126 by gravity, or alternatively be secured thereto by vacuum, electrostatic force, mechanical clamps and the like. The embodiment depicted inFIG. 1 , thesupport member 126 is anelectrostatic chuck 188. - The
electrostatic chuck 188 is generally formed from ceramic or similar dielectric material and comprises at least one clamping electrode (not shown) controlled using apower supply 128. In a further embodiment, theelectrostatic chuck 188 may comprise at least one RF electrode (not shown) coupled, through asecond matching network 124, to apower source 122 of substrate bias, and may also include at least one embedded heater (not shown) controlled using apower supply 132. - The
electrostatic chuck 188 may further comprise a plurality of gas passages (not shown), such as grooves, that are formed in asubstrate supporting surface 176 of the chuck and fluidly coupled to asource 148 of a heat transfer (or backside) gas. In operation, the backside gas (e.g., helium (He)) is provided at controlled pressure into the gas passages to enhance the heat transfer between theelectrostatic chuck 188 and thesubstrate 150. Conventionally, at least thesubstrate supporting surface 176 of the electrostatic chuck is provided with a coating resistant to the chemistries and temperatures used during processing the substrates. - In one embodiment, the
support member 126 comprises at least one embedded insert 166 (oneannular insert 166 is illustratively shown) formed from at least one material having a different coefficient of thermal conductivity than the material(s) of adjacent regions of thesupport member 126. Typically, theinserts 166 are formed from materials having a smaller coefficient of thermal conductivity than the material(s) of the adjacent regions. In a further embodiment, theinserts 166 may be formed from materials having an anisotropic coefficient of thermal conductivity. In an alternate embodiment (not shown), at least oneinsert 166 may be disposed coplanar with thesubstrate supporting surface 176. - As with the
inserts 168 of thebase 114, the thermal conductivity, as well as the shape, dimensions, location, and number ofinserts 166 in thesupport member 126 may be selectively chosen to control the heat transfer through thepedestal assembly 116 to achieve, in operation, a pre-determined pattern of the temperature distribution on thesubstrate supporting surface 176 of thesupport member 126 and, as such, across the diameter of thesubstrate 150. - The
thermoconductive layer 134 comprises a plurality of material regions (twoannular regions circular region 106 are illustratively shown), at least two of which having different coefficients of thermal conductivity. Eachregion thermoconductive layer 134. In a further embodiment, one or more of the materials comprising theregions layer 134 in the directions orthogonal or parallel to themember supporting surface 180 may differ from the coefficients in at least one other direction. The coefficient of thermal conductivity between theregions layer 134 may be selected to promote laterally different rates of heat transfer between thechuck 126 andbase 114, thereby controlling the temperature distribution across the diameter of thesubstrate 150. - In yet further embodiment, gaps 190 (as shown in
FIG. 2A ) maybe provided between at least two adjacent regions of thethermoconductive layer 134. In thelayer 134,such gaps 190 may form either gas-filled or vacuumed volumes having pre-determined form factors. Agap 190 may alternatively be formed within a region of the layer 134 (as shown inFIG. 1C ). -
FIG. 2 depicts a schematic cross-sectional view of the substrate pedestal taken along a line 2-2 inFIG. 1A . In the depicted embodiment, thethermoconductive layer 134 illustratively comprises theannular regions circular region 106. In alternate embodiments, thelayer 134 may comprise either more or less than three regions, as well as regions having different form factors, for example, the regions may be arranged as grids, radially oriented shapes, and polar arrays among others. The regions of thethermoconductive layer 134 may be composed from materials (e.g., adhesive materials) applied in a form of a paste that is further developed into a hard adhesive compound, as well as in a form of an adhesive tape or an adhesive foil. Thermal conductivity of the materials in thethermoconductive layer 134 may be selected in a range from 0.01 to 200 W/mK and, in one exemplary embodiment, in a range from 0.1 to 10 W/mK. In yet another embodiment, the adjacent regions have a difference in thermal conductivities in the range of about 0.1 to 10 W/mK, and may have a difference in conductivity between an inner most and out most regions of thelayer 134 of about 0.1 to about 10 W/mK. Examples of suitable adhesive materials include, but not limited to, pastes and tapes comprising acrylic and silicon based compounds. The adhesive materials may additionally include at least one thermally conductive ceramic filler, e.g., aluminum oxide (Al2O3), aluminum nitride (AlN), and titanium diboride (TiB2), and the like. One example of an adhesive tape suitable for theconductive layer 134 is sold under the tradename THERMATTACH®, available from Chomerics, a division of Parker Hannifin Corporation, located in Wolburn, Mass. - In the
thermoconductive layer 134, the thermal conductivity, as well as the form factor, dimensions, and a number of regions having the pre-determined coefficients of thermal conductivity may be selectively chosen to control the heat transfer between theelectrostatic chuck 126 and the base 114 to achieve, in operation, a pre-determined pattern of the temperature distribution on thesubstrate supporting surface 176 of the chuck and, as such, in thesubstrate 150. To further control the heat transfer through theconductive layer 134 between the base 114 andsupport member 126, one ormore channels 108 are provided to flow a heat transfer medium therethrough. Thechannels 108 are coupled through the base 114 to asource 150 of heat transfer medium, such as a cooling gas. Some examples of suitable cooling gases include helium and nitrogen, among others. As the cooling gas disposed in thechannels 108 is part of the heat transfer path between thechuck 126 andbase 114, the position of thechannels 108, and the pressure, flow rate, temperature, density and composition of the heat transfer medium of cooling gas provided, provides enhanced control of the heat transfer profile through thepedestal assembly 116. Moreover, as the density and flow rate of gas in thechannel 108 may be controlled in-situ during processing ofsubstrate 150, the temperature control of thesubstrate 150 may be changed during processing to further enhance processing performance. Although asingle source 156 of cooling gas is shown, it is contemplated that one or more sources of cooling gas may be coupled to thechannels 108 in a manner such that the types, pressures and/or flow rate of cooling gases withinindividual channels 108 may be independently controller, thereby facilitating an even greater level of temperature control. - In the embodiment depicted in
FIG. 1A , thechannels 108 are depicted as formed in themember supporting surface 180. However, it is contemplated that thechannels 108 may be formed at least partially in themember supporting surface 180, at least partially in the bottom surface of thesupport member 126, or at least partially in the thermallyconductive layer 134, along with combinations thereof. In one embodiment, between about 2 to 10channels 108 are disposed in thepedestal assembly 116 and provide with the selectivity maintained at a pressure between about 760 Torr (atmospheric pressure) to about 10 Torr. For example, at least one of thechannels 108 may be partially or entirely formed in theelectrostatic chuck 126, as illustrated inFIGS. 3-4 . More specifically,FIG. 3 depicts a schematic diagram of a portion of thesubstrate pedestal assembly 116 where thechannels 108 are formed entirely in theelectrostatic chuck 126.FIG. 4 depicts a schematic diagram of a portion of thesubstrate pedestal assembly 116 where thechannels 108 are partially formed in thebase 114 and, partially, in theelectrostatic chuck 126.FIG. 5 depicts a schematic diagram of a portion of thesubstrate pedestal assembly 116 where thechannels 108 are formed in thethermoconductive layer 134. Although inFIG. 5 the channels are shown disposed betweendifferent regions thermoconductive layer 134, the one or more of the channels may be formed through one or more of theregions - Returning to
FIG. 1A , at least one of the location, shape, dimensions, and number of thechannels 108 and inserts 166, 168 as well as the thermal conductivity of theinserts channels 108, may be selectively chosen to control the heat transfer between thesupport member 126 to the base 114 to achieve, in operation, a pre-determined pattern of the temperature distribution on thesubstrate supporting surface 176 of thechuck 126 and, as such, control the temperature profile of thesubstrate 150. In further embodiments, the pressure of the cooling gas in at least onechannel 108, as well as the flow of the cooling liquid in at least oneconduit 156 may also be selectively controlled to achieve and/or enhance temperature control of the substrate. The heat transfer rate may also be controlled by individually controlling the type of gas, pressure and/or flow rate betweenrespective channels 108. - In yet further embodiments, the pre-determined pattern of the temperature distribution in the
substrate 150 may be achieved using individual or combinations of the described control means, e.g., thethermoconductive layer 134, theinserts channels 108,conduits 160, the pressure of cooling gas in thechannels 108, and the flow of the cooling liquid in theconduits 160. Furthermore, in the discussed above embodiments, pre-determined patterns of the temperature distribution on thesubstrate supporting surface 176 and in thesubstrate 150 may additionally be selectively controlled to compensate for non-uniformity of the heat fluxes originated, during processing thesubstrate 150, by a plasma of the process gas and/or substrate bias. -
FIG. 6 depicts a flow diagram of one embodiment of an inventive method for controlling temperature of a substrate processed in a semiconductor substrate processing apparatus as aprocess 600. Theprocess 600 illustratively includes the processing steps performed upon thesubstrate 150 during processing in thereactor 100 described in the embodiments above. It is contemplated that theprocess 600 may be performed in other processing systems. - The
process 600 starts atstep 601 and proceeds to step 602. Atstep 602, thesubstrate 150 is transferred to thepedestal assembly 116 disposed in theprocess chamber 110. Atstep 604, thesubstrate 150 is positioned (e.g., using a substrate robot, not shown) on thesubstrate supporting surface 176 of theelectrostatic chuck 188. Atstep 606, thepower supply 132 engages theelectrostatic chuck 188 to clamp thesubstrate 150 to the supportingsurface 176 of thechuck 188. Atstep 608, thesubstrate 150 is processed (e.g., etched) in theprocess chamber 110 in accordance with a process recipe executed as directed by thecontroller 140. Duringstep 608, thesubstrate pedestal assembly 116 facilitates a pre-determined pattern of temperature distribution in thesubstrate 150, utilizing one or more of the temperature control attributes of thepedestal assembly 116 discussed in reference toFIGS. 1-5 above. Optionally, the rate and/or profile of heat transferred through thechuck 114 duringstep 608 may be adjusted in-situ by changing one or more of the characteristics of the gas present in one or more of thechannels 108. Upon completion of processing, atstep 610, thepower supply 132 disengages theelectrostatic chuck 188 and, as such, de-chucks thesubstrate 150 that is further removed from theprocess chamber 110. Atstep 612, theprocess 600 ends. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (25)
1. A substrate pedestal assembly comprising:
a substrate support member;
a base having a first surface; and
a material layer disposed between and contacting the first surface and the support member, wherein the material layer comprises a plurality of material regions, at least two of the material regions having different coefficients of thermal conductivity.
2. The substrate pedestal assembly of claim 1 , wherein at least one region of the plurality of material regions has an anisotropic coefficient of thermal conductivity.
3. The substrate pedestal assembly of claim 1 , wherein at least one region of the plurality of material regions is separated by a gap from an adjacent material region.
4. The substrate pedestal assembly of claim 1 , wherein the material layer couples the support member to the first surface of the base.
5. The substrate pedestal assembly of claim 4 , wherein at least one region of the material layer is thermally conductive adhesive material.
6. The substrate pedestal assembly of claim 4 , wherein at least one region of the material layer comprises at least one thermally conductive adhesive tape.
7. The substrate pedestal assembly of claim 4 , wherein the material layer is at least one of an acrylic based compound and silicon based compound.
8. The substrate support pedestal assembly of claim 1 , wherein the material layer further comprises a ceramic filler selected from the group consisting of aluminum oxide (Al2O3), aluminum nitride (AlN), titanium diboride (TiB2), and combinations thereof.
9. The substrate pedestal assembly of claim 1 , wherein the regions of the material layer have coefficients of thermal conductivity in a range from 0.01 to 200 W/mK.
10. The substrate pedestal assembly of claim 1 further comprising at least one channel adapted to provide a heat transfer medium between the base and support member.
11. The substrate pedestal assembly of claim 10 , wherein the at least one channel is at least partially formed in the base.
12. The substrate pedestal assembly of claim 10 , wherein the at least one is at least partially formed in the support member.
13. The substrate pedestal assembly of claim 10 , wherein the pressure of the heat transfer medium in the at least one channel may be selectively controlled in a range from about 760 to about 10 Torr.
14. The substrate pedestal assembly of claim 10 , wherein the heat transfer medium is He.
15. The substrate pedestal assembly of claim 10 , wherein the at least one channel is formed in the material layer.
16. The substrate pedestal assembly of claim 1 , wherein the base comprises at least one conduit fluidly coupled to a heat transfer liquid source.
17. The substrate pedestal assembly of claim 10 , wherein the channel is formed between material regions having different coefficients of thermal expansion.
18. The substrate pedestal assembly of claim 1 , wherein the base comprises at least one embedded heater electrically coupled to a controlled power supply.
19. The substrate pedestal assembly of claim 1 . wherein the base comprises at least one embedded insert formed from a material having a different coefficient of thermal conductivity than a material of an adjacent region of the base.
20. The substrate pedestal assembly of claim 19 , wherein the material of the at least one embedded insert has a lower coefficient of thermal conductivity than the material of the adjacent region of the base.
21. The substrate pedestal assembly of claim 19 , wherein the material of the at least one embedded insert has an anisotropic coefficient of thermal conductivity.
22. The substrate pedestal assembly of claim 1 , wherein the support member comprises at least one embedded insert formed from a material having a different coefficient of thermal conductivity than a material of an adjacent region of the support member.
23. The substrate pedestal assembly of claim 22 , wherein the material of the at least one embedded insert has a lower coefficient of thermal conductivity than the material of the adjacent region of the support member.
24. The substrate pedestal assembly of claim 22 , wherein the material of the at least one embedded insert has an anisotropic coefficient of thermal conductivity.
25. The substrate pedestal assembly of claim 1 , wherein a support member is an electrostatic chuck.
Priority Applications (1)
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US11/563,272 US20070102118A1 (en) | 2004-10-07 | 2006-11-27 | Method and apparatus for controlling temperature of a substrate |
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US10/960,874 US7544251B2 (en) | 2004-10-07 | 2004-10-07 | Method and apparatus for controlling temperature of a substrate |
US11/563,272 US20070102118A1 (en) | 2004-10-07 | 2006-11-27 | Method and apparatus for controlling temperature of a substrate |
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US10/960,874 Division US7544251B2 (en) | 2004-10-07 | 2004-10-07 | Method and apparatus for controlling temperature of a substrate |
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US11/246,012 Expired - Fee Related US8075729B2 (en) | 2004-10-07 | 2005-10-07 | Method and apparatus for controlling temperature of a substrate |
US11/563,272 Abandoned US20070102118A1 (en) | 2004-10-07 | 2006-11-27 | Method and apparatus for controlling temperature of a substrate |
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US11/246,012 Expired - Fee Related US8075729B2 (en) | 2004-10-07 | 2005-10-07 | Method and apparatus for controlling temperature of a substrate |
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US (3) | US7544251B2 (en) |
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US20070081296A1 (en) * | 2005-10-11 | 2007-04-12 | Applied Materials, Inc. | Method of operating a capacitively coupled plasma reactor with dual temperature control loops |
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US20080017104A1 (en) * | 2006-07-20 | 2008-01-24 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US7436645B2 (en) | 2004-10-07 | 2008-10-14 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US20090097184A1 (en) * | 2007-10-12 | 2009-04-16 | Applied Materials, Inc. | Electrostatic chuck assembly |
US20090283976A1 (en) * | 2008-05-16 | 2009-11-19 | Canon Anelva Corporation | Substrate holding apparatus |
US7648914B2 (en) | 2004-10-07 | 2010-01-19 | Applied Materials, Inc. | Method for etching having a controlled distribution of process results |
US20120193071A1 (en) * | 2009-06-24 | 2012-08-02 | Canon Anelva Corporation | Vacuum heating/cooling apparatus and manufacturing method of magnetoresistance element |
US20120196242A1 (en) * | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
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US20080073032A1 (en) * | 2006-08-10 | 2008-03-27 | Akira Koshiishi | Stage for plasma processing apparatus, and plasma processing apparatus |
US20080038448A1 (en) * | 2006-08-11 | 2008-02-14 | Lam Research Corp. | Chemical resistant semiconductor processing chamber bodies |
US7501605B2 (en) * | 2006-08-29 | 2009-03-10 | Lam Research Corporation | Method of tuning thermal conductivity of electrostatic chuck support assembly |
US7901509B2 (en) | 2006-09-19 | 2011-03-08 | Momentive Performance Materials Inc. | Heating apparatus with enhanced thermal uniformity and method for making thereof |
US7723648B2 (en) * | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
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US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
US20080188011A1 (en) * | 2007-01-26 | 2008-08-07 | Silicon Genesis Corporation | Apparatus and method of temperature conrol during cleaving processes of thick film materials |
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US7777160B2 (en) * | 2007-12-17 | 2010-08-17 | Momentive Performance Materials Inc. | Electrode tuning method and apparatus for a layered heater structure |
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US8066895B2 (en) * | 2008-02-28 | 2011-11-29 | Applied Materials, Inc. | Method to control uniformity using tri-zone showerhead |
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US9176398B2 (en) | 2008-06-10 | 2015-11-03 | Asml Netherlands B.V. | Method and system for thermally conditioning an optical element |
US8227768B2 (en) * | 2008-06-25 | 2012-07-24 | Axcelis Technologies, Inc. | Low-inertia multi-axis multi-directional mechanically scanned ion implantation system |
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WO2011056433A2 (en) * | 2009-11-03 | 2011-05-12 | Applied Materials, Inc. | Temperature control of a substrate during a plasma ion implantation process for patterned disc media applications |
US8274017B2 (en) * | 2009-12-18 | 2012-09-25 | Applied Materials, Inc. | Multifunctional heater/chiller pedestal for wide range wafer temperature control |
WO2011082371A2 (en) * | 2009-12-30 | 2011-07-07 | Solexel, Inc. | Mobile electrostatic carriers for thin wafer processing |
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US8916793B2 (en) | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
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US8608852B2 (en) * | 2010-06-11 | 2013-12-17 | Applied Materials, Inc. | Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies |
US8591755B2 (en) * | 2010-09-15 | 2013-11-26 | Lam Research Corporation | Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same |
US8822876B2 (en) * | 2010-10-15 | 2014-09-02 | Applied Materials, Inc. | Multi-zoned plasma processing electrostatic chuck with improved temperature uniformity |
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JP5973731B2 (en) | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | Plasma processing apparatus and heater temperature control method |
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US9089007B2 (en) | 2012-04-27 | 2015-07-21 | Applied Materials, Inc. | Method and apparatus for substrate support with multi-zone heating |
US9267739B2 (en) * | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
JP5996340B2 (en) * | 2012-09-07 | 2016-09-21 | 東京エレクトロン株式会社 | Plasma etching equipment |
KR102172164B1 (en) * | 2012-09-19 | 2020-10-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods for bonding substrates |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
JP5992388B2 (en) * | 2012-12-03 | 2016-09-14 | 日本碍子株式会社 | Ceramic heater |
US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
US9685356B2 (en) | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
US9358702B2 (en) | 2013-01-18 | 2016-06-07 | Applied Materials, Inc. | Temperature management of aluminium nitride electrostatic chuck |
CH707480B1 (en) * | 2013-01-21 | 2016-08-31 | Besi Switzerland Ag | Bonding head with a heating and cooling suction device. |
US20140209242A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Substrate processing chamber components incorporating anisotropic materials |
US8970114B2 (en) | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9669653B2 (en) | 2013-03-14 | 2017-06-06 | Applied Materials, Inc. | Electrostatic chuck refurbishment |
US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
US9668373B2 (en) | 2013-03-15 | 2017-05-30 | Applied Materials, Inc. | Substrate support chuck cooling for deposition chamber |
US10209016B2 (en) | 2013-03-22 | 2019-02-19 | Toyota Motor Engineering & Manufacturing North America, Inc. | Thermal energy guiding systems including anisotropic thermal guiding coatings and methods for fabricating the same |
US9887121B2 (en) | 2013-04-26 | 2018-02-06 | Applied Materials, Inc. | Protective cover for electrostatic chuck |
US9666466B2 (en) | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
JP6196095B2 (en) * | 2013-08-07 | 2017-09-13 | 日本特殊陶業株式会社 | Electrostatic chuck |
JP6239894B2 (en) * | 2013-08-07 | 2017-11-29 | 日本特殊陶業株式会社 | Electrostatic chuck |
KR20160058917A (en) * | 2013-09-20 | 2016-05-25 | 어플라이드 머티어리얼스, 인코포레이티드 | Substrate carrier with integrated electrostatic chuck |
TW201518538A (en) | 2013-11-11 | 2015-05-16 | Applied Materials Inc | Pixelated cooling, temperature controlled substrate support assembly |
CN103594312A (en) * | 2013-11-13 | 2014-02-19 | 上海华力微电子有限公司 | Dotted high current ion implanter |
CN103762145B (en) * | 2013-12-23 | 2016-03-09 | 中国电子科技集团公司第四十八研究所 | High-temperature target chamber system with rotary disk |
JP6559706B2 (en) | 2014-01-27 | 2019-08-14 | ビーコ インストルメンツ インコーポレイテッド | Wafer carrier with holding pockets with compound radius for chemical vapor deposition systems |
WO2015171207A1 (en) | 2014-05-09 | 2015-11-12 | Applied Materials, Inc. | Substrate carrier system and method for using the same |
US20150332942A1 (en) * | 2014-05-16 | 2015-11-19 | Eng Sheng Peh | Pedestal fluid-based thermal control |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US11302520B2 (en) | 2014-06-28 | 2022-04-12 | Applied Materials, Inc. | Chamber apparatus for chemical etching of dielectric materials |
US9786539B2 (en) * | 2014-07-16 | 2017-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd | Wafer chuck |
US10431435B2 (en) * | 2014-08-01 | 2019-10-01 | Applied Materials, Inc. | Wafer carrier with independent isolated heater zones |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
JP6278277B2 (en) * | 2015-01-09 | 2018-02-14 | 住友大阪セメント株式会社 | Electrostatic chuck device |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
JP6655310B2 (en) * | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
TWI757242B (en) * | 2015-08-06 | 2022-03-11 | 美商應用材料股份有限公司 | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US20170051402A1 (en) * | 2015-08-17 | 2017-02-23 | Asm Ip Holding B.V. | Susceptor and substrate processing apparatus |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10154542B2 (en) * | 2015-10-19 | 2018-12-11 | Watlow Electric Manufacturing Company | Composite device with cylindrical anisotropic thermal conductivity |
US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
US10499461B2 (en) * | 2015-12-21 | 2019-12-03 | Intel Corporation | Thermal head with a thermal barrier for integrated circuit die processing |
JP6633931B2 (en) * | 2016-02-10 | 2020-01-22 | 日本特殊陶業株式会社 | Holding device and method of manufacturing holding device |
JP6639940B2 (en) * | 2016-02-17 | 2020-02-05 | 日本特殊陶業株式会社 | Holding device and method of manufacturing holding device |
US10648080B2 (en) | 2016-05-06 | 2020-05-12 | Applied Materials, Inc. | Full-area counter-flow heat exchange substrate support |
JP6445191B2 (en) * | 2016-05-09 | 2018-12-26 | 株式会社アルバック | Electrostatic chuck and plasma processing apparatus |
WO2017195893A1 (en) * | 2016-05-13 | 2017-11-16 | Toto株式会社 | Electrostatic chuck |
JP6183567B1 (en) * | 2016-05-13 | 2017-08-23 | Toto株式会社 | Electrostatic chuck |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
CN106091470A (en) * | 2016-06-21 | 2016-11-09 | 上海工程技术大学 | A kind of refrigeration plant and refrigerating method thereof |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
DE102017200588A1 (en) * | 2017-01-16 | 2018-07-19 | Ers Electronic Gmbh | Device for tempering a substrate and corresponding manufacturing method |
US20180213608A1 (en) * | 2017-01-20 | 2018-07-26 | Applied Materials, Inc. | Electrostatic chuck with radio frequency isolated heaters |
JP6982394B2 (en) * | 2017-02-02 | 2021-12-17 | 東京エレクトロン株式会社 | Work piece processing device and mounting table |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11043401B2 (en) * | 2017-04-19 | 2021-06-22 | Ngk Spark Plug Co., Ltd. | Ceramic member |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
JP6924618B2 (en) | 2017-05-30 | 2021-08-25 | 東京エレクトロン株式会社 | Electrostatic chuck and plasma processing equipment |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
WO2018237388A1 (en) * | 2017-06-23 | 2018-12-27 | Watlow Electric Manufacturing Company | High temperature heat plate pedestal |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
CN109213086B (en) * | 2017-06-29 | 2020-10-23 | 台湾积体电路制造股份有限公司 | Processing system and processing method |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10424487B2 (en) | 2017-10-24 | 2019-09-24 | Applied Materials, Inc. | Atomic layer etching processes |
WO2019104040A1 (en) | 2017-11-21 | 2019-05-31 | Watlow Electric Manufacturing Company | Dual-purpose vias for use in ceramic pedestals |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
CN109962030B (en) * | 2017-12-22 | 2022-03-29 | 中微半导体设备(上海)股份有限公司 | Electrostatic chuck |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US11848177B2 (en) | 2018-02-23 | 2023-12-19 | Lam Research Corporation | Multi-plate electrostatic chucks with ceramic baseplates |
TWI766433B (en) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US11133212B2 (en) * | 2018-05-16 | 2021-09-28 | Applied Materials, Inc. | High temperature electrostatic chuck |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11133211B2 (en) * | 2018-08-22 | 2021-09-28 | Lam Research Corporation | Ceramic baseplate with channels having non-square corners |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
JP7203585B2 (en) * | 2018-12-06 | 2023-01-13 | 東京エレクトロン株式会社 | Substrate support, substrate processing apparatus, substrate processing system, and method of detecting adhesive erosion in substrate support |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
JP2022520784A (en) | 2019-02-12 | 2022-04-01 | ラム リサーチ コーポレーション | Electrostatic chuck with ceramic monolithic body |
CN110289241B (en) * | 2019-07-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Electrostatic chuck, manufacturing method thereof, process chamber and semiconductor processing equipment |
JP7394556B2 (en) * | 2019-08-09 | 2023-12-08 | 東京エレクトロン株式会社 | Mounting table and substrate processing equipment |
US11610792B2 (en) * | 2019-08-16 | 2023-03-21 | Applied Materials, Inc. | Heated substrate support with thermal baffles |
US11515190B2 (en) * | 2019-08-27 | 2022-11-29 | Watlow Electric Manufacturing Company | Thermal diffuser for a semiconductor wafer holder |
JP7316179B2 (en) * | 2019-10-04 | 2023-07-27 | 東京エレクトロン株式会社 | SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS |
JP7304799B2 (en) * | 2019-11-28 | 2023-07-07 | 東京エレクトロン株式会社 | Substrate processing equipment and piping assemblies |
KR102372810B1 (en) * | 2020-03-27 | 2022-03-11 | 주식회사 케이에스티이 | Electrostatic chuck |
KR102615216B1 (en) * | 2020-05-15 | 2023-12-15 | 세메스 주식회사 | Electrostatic chuck, substrate processing apparatus and substrate processing method |
US11699602B2 (en) * | 2020-07-07 | 2023-07-11 | Applied Materials, Inc. | Substrate support assemblies and components |
CN112144033B (en) * | 2020-09-09 | 2022-12-09 | 北京北方华创微电子装备有限公司 | Base assembly and semiconductor processing equipment |
CN114388323A (en) * | 2020-10-20 | 2022-04-22 | 中微半导体设备(上海)股份有限公司 | Electrostatic chuck and plasma processing device thereof |
JP2023003003A (en) * | 2021-06-23 | 2023-01-11 | 東京エレクトロン株式会社 | Substrate support part and substrate processing apparatus |
CN114975178B (en) * | 2022-05-18 | 2024-04-05 | 江苏微导纳米科技股份有限公司 | Temperature control assembly, semiconductor processing chamber and semiconductor processing equipment |
CN117127154A (en) * | 2023-10-16 | 2023-11-28 | 粤芯半导体技术股份有限公司 | Method for depositing interconnection metal in semiconductor device |
Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5427670A (en) * | 1992-12-10 | 1995-06-27 | U.S. Philips Corporation | Device for the treatment of substrates at low temperature |
US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6256187B1 (en) * | 1998-08-03 | 2001-07-03 | Tomoegawa Paper Co., Ltd. | Electrostatic chuck device |
US6310755B1 (en) * | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
US20010054389A1 (en) * | 2000-06-14 | 2001-12-27 | Yasumi Sago | Electro-static chucking mechanism and surface processing apparatus |
US20020021545A1 (en) * | 2000-08-16 | 2002-02-21 | Creative Technology Corp. | Electrostatic chucking device and manufacturing method thereof |
US20020050246A1 (en) * | 2000-06-09 | 2002-05-02 | Applied Materials, Inc. | Full area temperature controlled electrostatic chuck and method of fabricating same |
US6482747B1 (en) * | 1997-12-26 | 2002-11-19 | Hitachi, Ltd. | Plasma treatment method and plasma treatment apparatus |
US20020170882A1 (en) * | 2001-02-28 | 2002-11-21 | Fuminori Akiba | Method and apparatus for supporting substrate |
US6606234B1 (en) * | 2000-09-05 | 2003-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow |
US20030155079A1 (en) * | 1999-11-15 | 2003-08-21 | Andrew D. Bailey | Plasma processing system with dynamic gas distribution control |
US20030164226A1 (en) * | 2002-03-04 | 2003-09-04 | Seiichiro Kanno | Wafer processing apparatus and a wafer stage and a wafer processing method |
US6664738B2 (en) * | 2002-02-27 | 2003-12-16 | Hitachi, Ltd. | Plasma processing apparatus |
US20030230551A1 (en) * | 2002-06-14 | 2003-12-18 | Akira Kagoshima | Etching system and etching method |
US20040115947A1 (en) * | 2002-11-29 | 2004-06-17 | Tokyo Electron Limited | Thermally zoned substrate holder assembly |
US20040185670A1 (en) * | 2003-03-17 | 2004-09-23 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US20040187787A1 (en) * | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
US20040195216A1 (en) * | 2001-08-29 | 2004-10-07 | Strang Eric J. | Apparatus and method for plasma processing |
US20040212947A1 (en) * | 2003-04-22 | 2004-10-28 | Applied Materials, Inc. | Substrate support having heat transfer system |
US20040261721A1 (en) * | 2003-06-30 | 2004-12-30 | Steger Robert J. | Substrate support having dynamic temperature control |
US20050042881A1 (en) * | 2003-05-12 | 2005-02-24 | Tokyo Electron Limited | Processing apparatus |
US20060076109A1 (en) * | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
US20060158821A1 (en) * | 2003-06-17 | 2006-07-20 | Kinya Miyashita | Dipolar electrostatic chuck |
US20070139856A1 (en) * | 2004-10-07 | 2007-06-21 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6052271A (en) * | 1994-01-13 | 2000-04-18 | Rohm Co., Ltd. | Ferroelectric capacitor including an iridium oxide layer in the lower electrode |
US5673647A (en) | 1994-10-31 | 1997-10-07 | Micro Chemical, Inc. | Cattle management method and system |
JP3537544B2 (en) | 1995-06-22 | 2004-06-14 | 大日本スクリーン製造株式会社 | Gravure engraving system |
JPH0917770A (en) * | 1995-06-28 | 1997-01-17 | Sony Corp | Plasma treatment method and plasma apparatus used for it |
TW286414B (en) * | 1995-07-10 | 1996-09-21 | Watkins Johnson Co | Electrostatic chuck assembly |
US5609720A (en) * | 1995-09-29 | 1997-03-11 | Lam Research Corporation | Thermal control of semiconductor wafer during reactive ion etching |
JPH09256153A (en) * | 1996-03-15 | 1997-09-30 | Anelva Corp | Substrate processor |
US5846375A (en) * | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
JP3979694B2 (en) * | 1997-01-22 | 2007-09-19 | 株式会社巴川製紙所 | Electrostatic chuck device and manufacturing method thereof |
JP4040814B2 (en) * | 1998-11-30 | 2008-01-30 | 株式会社小松製作所 | Disk heater and temperature control device |
US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
TW582050B (en) | 1999-03-03 | 2004-04-01 | Ebara Corp | Apparatus and method for processing substrate |
JP3805134B2 (en) | 1999-05-25 | 2006-08-02 | 東陶機器株式会社 | Electrostatic chuck for insulating substrate adsorption |
JP3723398B2 (en) | 2000-01-28 | 2005-12-07 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
JP2002009064A (en) | 2000-06-21 | 2002-01-11 | Hitachi Ltd | Processing device for sample and processing method therefor |
KR100378187B1 (en) * | 2000-11-09 | 2003-03-29 | 삼성전자주식회사 | A wafer stage including electro-static chuck and method for dechucking wafer using the same |
KR100434487B1 (en) * | 2001-01-17 | 2004-06-05 | 삼성전자주식회사 | Shower head & film forming apparatus having the same |
JP4003540B2 (en) | 2001-05-30 | 2007-11-07 | ヤマハ株式会社 | Substrate processing method and apparatus |
KR20030000768A (en) * | 2001-06-27 | 2003-01-06 | 삼성전자 주식회사 | electro static chuck with shadow ring |
US20030089457A1 (en) | 2001-11-13 | 2003-05-15 | Applied Materials, Inc. | Apparatus for controlling a thermal conductivity profile for a pedestal in a semiconductor wafer processing chamber |
JP2003243490A (en) | 2002-02-18 | 2003-08-29 | Hitachi High-Technologies Corp | Wafer treatment device and wafer stage, and wafer treatment method |
KR100455430B1 (en) * | 2002-03-29 | 2004-11-06 | 주식회사 엘지이아이 | Cooling apparatus for surface treatment device of heat exchanger and manufacturing method thereof |
JP4218822B2 (en) | 2002-07-19 | 2009-02-04 | 東京エレクトロン株式会社 | Mounting mechanism having a vacuum heat insulating layer |
CN2585414Y (en) | 2002-11-08 | 2003-11-05 | 冯自平 | Heat sink having even temp. channel |
GB0320469D0 (en) * | 2003-09-01 | 2003-10-01 | Nokia Corp | A method of controlling connection admission |
US20060027169A1 (en) | 2004-08-06 | 2006-02-09 | Tokyo Electron Limited | Method and system for substrate temperature profile control |
US7886687B2 (en) * | 2004-12-23 | 2011-02-15 | Advanced Display Process Engineering Co. Ltd. | Plasma processing apparatus |
EP1748331B1 (en) * | 2005-07-29 | 2010-10-06 | ETA SA Manufacture Horlogère Suisse | Electronic diver's watch with a redundant analog display of the instantaneous depth |
US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
-
2004
- 2004-10-07 US US10/960,874 patent/US7544251B2/en not_active Expired - Fee Related
-
2005
- 2005-10-06 TW TW094135006A patent/TWI323018B/en not_active IP Right Cessation
- 2005-10-06 TW TW095218711U patent/TWM314913U/en not_active IP Right Cessation
- 2005-10-07 US US11/246,012 patent/US8075729B2/en not_active Expired - Fee Related
- 2005-10-07 JP JP2005295533A patent/JP4481913B2/en not_active Expired - Fee Related
- 2005-10-07 KR KR1020050094425A patent/KR100815539B1/en active IP Right Grant
- 2005-10-08 CN CN2006101505390A patent/CN1945807B/en not_active Expired - Fee Related
- 2005-10-08 CN CNA2005101165360A patent/CN1779938A/en active Pending
-
2006
- 2006-10-11 KR KR1020060098807A patent/KR101045730B1/en not_active IP Right Cessation
- 2006-11-21 JP JP2006009474U patent/JP3129419U/en not_active Expired - Fee Related
- 2006-11-27 US US11/563,272 patent/US20070102118A1/en not_active Abandoned
Patent Citations (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5427670A (en) * | 1992-12-10 | 1995-06-27 | U.S. Philips Corporation | Device for the treatment of substrates at low temperature |
US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US6482747B1 (en) * | 1997-12-26 | 2002-11-19 | Hitachi, Ltd. | Plasma treatment method and plasma treatment apparatus |
US6256187B1 (en) * | 1998-08-03 | 2001-07-03 | Tomoegawa Paper Co., Ltd. | Electrostatic chuck device |
US6310755B1 (en) * | 1999-05-07 | 2001-10-30 | Applied Materials, Inc. | Electrostatic chuck having gas cavity and method |
US20030155079A1 (en) * | 1999-11-15 | 2003-08-21 | Andrew D. Bailey | Plasma processing system with dynamic gas distribution control |
US20020050246A1 (en) * | 2000-06-09 | 2002-05-02 | Applied Materials, Inc. | Full area temperature controlled electrostatic chuck and method of fabricating same |
US6853533B2 (en) * | 2000-06-09 | 2005-02-08 | Applied Materials, Inc. | Full area temperature controlled electrostatic chuck and method of fabricating same |
US20010054389A1 (en) * | 2000-06-14 | 2001-12-27 | Yasumi Sago | Electro-static chucking mechanism and surface processing apparatus |
US20020021545A1 (en) * | 2000-08-16 | 2002-02-21 | Creative Technology Corp. | Electrostatic chucking device and manufacturing method thereof |
US6606234B1 (en) * | 2000-09-05 | 2003-08-12 | Saint-Gobain Ceramics & Plastics, Inc. | Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow |
US20020170882A1 (en) * | 2001-02-28 | 2002-11-21 | Fuminori Akiba | Method and apparatus for supporting substrate |
US20040195216A1 (en) * | 2001-08-29 | 2004-10-07 | Strang Eric J. | Apparatus and method for plasma processing |
US20040061449A1 (en) * | 2002-02-27 | 2004-04-01 | Masatsugu Arai | Plasma processing apparatus |
US6664738B2 (en) * | 2002-02-27 | 2003-12-16 | Hitachi, Ltd. | Plasma processing apparatus |
US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
US20030164226A1 (en) * | 2002-03-04 | 2003-09-04 | Seiichiro Kanno | Wafer processing apparatus and a wafer stage and a wafer processing method |
US20030230551A1 (en) * | 2002-06-14 | 2003-12-18 | Akira Kagoshima | Etching system and etching method |
US20040115947A1 (en) * | 2002-11-29 | 2004-06-17 | Tokyo Electron Limited | Thermally zoned substrate holder assembly |
US20040185670A1 (en) * | 2003-03-17 | 2004-09-23 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US20040187787A1 (en) * | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
US20040212947A1 (en) * | 2003-04-22 | 2004-10-28 | Applied Materials, Inc. | Substrate support having heat transfer system |
US7221553B2 (en) * | 2003-04-22 | 2007-05-22 | Applied Materials, Inc. | Substrate support having heat transfer system |
US20050042881A1 (en) * | 2003-05-12 | 2005-02-24 | Tokyo Electron Limited | Processing apparatus |
US20060158821A1 (en) * | 2003-06-17 | 2006-07-20 | Kinya Miyashita | Dipolar electrostatic chuck |
US20040261721A1 (en) * | 2003-06-30 | 2004-12-30 | Steger Robert J. | Substrate support having dynamic temperature control |
US20060076109A1 (en) * | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
US20060076108A1 (en) * | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
US20070139856A1 (en) * | 2004-10-07 | 2007-06-21 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
Cited By (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060076109A1 (en) * | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
US20060076108A1 (en) * | 2004-10-07 | 2006-04-13 | John Holland | Method and apparatus for controlling temperature of a substrate |
US8075729B2 (en) * | 2004-10-07 | 2011-12-13 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US7544251B2 (en) | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US7436645B2 (en) | 2004-10-07 | 2008-10-14 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
US7648914B2 (en) | 2004-10-07 | 2010-01-19 | Applied Materials, Inc. | Method for etching having a controlled distribution of process results |
US20070081294A1 (en) * | 2005-10-11 | 2007-04-12 | Applied Materials, Inc. | Capacitively coupled plasma reactor having very agile wafer temperature control |
US8092638B2 (en) | 2005-10-11 | 2012-01-10 | Applied Materials Inc. | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution |
US20100300621A1 (en) * | 2005-10-11 | 2010-12-02 | Paul Lukas Brillhart | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
US8157951B2 (en) * | 2005-10-11 | 2012-04-17 | Applied Materials, Inc. | Capacitively coupled plasma reactor having very agile wafer temperature control |
US20070081296A1 (en) * | 2005-10-11 | 2007-04-12 | Applied Materials, Inc. | Method of operating a capacitively coupled plasma reactor with dual temperature control loops |
US20070097580A1 (en) * | 2005-10-11 | 2007-05-03 | Applied Materials, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
US8337660B2 (en) | 2005-10-11 | 2012-12-25 | B/E Aerospace, Inc. | Capacitively coupled plasma reactor having very agile wafer temperature control |
US20100303680A1 (en) * | 2005-10-11 | 2010-12-02 | Buchberger Douglas A Jr | Capacitively coupled plasma reactor having very agile wafer temperature control |
US20070081295A1 (en) * | 2005-10-11 | 2007-04-12 | Applied Materials, Inc. | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution |
US8801893B2 (en) | 2005-10-11 | 2014-08-12 | Be Aerospace, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
US7988872B2 (en) | 2005-10-11 | 2011-08-02 | Applied Materials, Inc. | Method of operating a capacitively coupled plasma reactor with dual temperature control loops |
US8034180B2 (en) | 2005-10-11 | 2011-10-11 | Applied Materials, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
US8546267B2 (en) | 2005-10-20 | 2013-10-01 | B/E Aerospace, Inc. | Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control |
US8329586B2 (en) | 2005-10-20 | 2012-12-11 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor using feed forward thermal control |
US8608900B2 (en) | 2005-10-20 | 2013-12-17 | B/E Aerospace, Inc. | Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes |
US8980044B2 (en) | 2005-10-20 | 2015-03-17 | Be Aerospace, Inc. | Plasma reactor with a multiple zone thermal control feed forward control apparatus |
US20100314046A1 (en) * | 2005-10-20 | 2010-12-16 | Paul Lukas Brillhart | Plasma reactor with a multiple zone thermal control feed forward control apparatus |
US20100319851A1 (en) * | 2005-10-20 | 2010-12-23 | Buchberger Jr Douglas A | Plasma reactor with feed forward thermal control system using a thermal model for accommodating rf power changes or wafer temperature changes |
US20110065279A1 (en) * | 2005-10-20 | 2011-03-17 | Buchberger Jr Douglas A | Method of processing a workpiece in a plasma reactor using feed forward thermal control |
US20110068085A1 (en) * | 2005-10-20 | 2011-03-24 | Paul Lukas Brillhart | Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control |
US20070091539A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes |
US8012304B2 (en) | 2005-10-20 | 2011-09-06 | Applied Materials, Inc. | Plasma reactor with a multiple zone thermal control feed forward control apparatus |
US8021521B2 (en) * | 2005-10-20 | 2011-09-20 | Applied Materials, Inc. | Method for agile workpiece temperature control in a plasma reactor using a thermal model |
US20070091540A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control |
US20070089834A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Plasma reactor with a multiple zone thermal control feed forward control apparatus |
US20070091537A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method for agile workpiece temperature control in a plasma reactor using a thermal model |
US8092639B2 (en) | 2005-10-20 | 2012-01-10 | Advanced Thermal Sciences Corporation | Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes |
US20070091538A1 (en) * | 2005-10-20 | 2007-04-26 | Buchberger Douglas A Jr | Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops |
US8221580B2 (en) | 2005-10-20 | 2012-07-17 | Applied Materials, Inc. | Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops |
US20070091541A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor using feed forward thermal control |
US20070258186A1 (en) * | 2006-04-27 | 2007-11-08 | Applied Materials, Inc | Substrate support with electrostatic chuck having dual temperature zones |
US8226769B2 (en) | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
US8663391B2 (en) | 2006-04-27 | 2014-03-04 | Applied Materials, Inc. | Electrostatic chuck having a plurality of heater coils |
US20080017104A1 (en) * | 2006-07-20 | 2008-01-24 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
US9883549B2 (en) | 2006-07-20 | 2018-01-30 | Applied Materials, Inc. | Substrate support assembly having rapid temperature control |
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US7649729B2 (en) | 2007-10-12 | 2010-01-19 | Applied Materials, Inc. | Electrostatic chuck assembly |
US20090097184A1 (en) * | 2007-10-12 | 2009-04-16 | Applied Materials, Inc. | Electrostatic chuck assembly |
US20090283976A1 (en) * | 2008-05-16 | 2009-11-19 | Canon Anelva Corporation | Substrate holding apparatus |
US20120193071A1 (en) * | 2009-06-24 | 2012-08-02 | Canon Anelva Corporation | Vacuum heating/cooling apparatus and manufacturing method of magnetoresistance element |
US8837924B2 (en) * | 2009-06-24 | 2014-09-16 | Canon Anelva Corporation | Vacuum heating/cooling apparatus and manufacturing method of magnetoresistance element |
US20120196242A1 (en) * | 2011-01-27 | 2012-08-02 | Applied Materials, Inc. | Substrate support with heater and rapid temperature change |
Also Published As
Publication number | Publication date |
---|---|
KR100815539B1 (en) | 2008-03-20 |
CN1945807B (en) | 2012-11-28 |
CN1779938A (en) | 2006-05-31 |
TWM314913U (en) | 2007-07-01 |
US20060076109A1 (en) | 2006-04-13 |
TW200616139A (en) | 2006-05-16 |
JP4481913B2 (en) | 2010-06-16 |
US7544251B2 (en) | 2009-06-09 |
JP2006140455A (en) | 2006-06-01 |
KR20060052119A (en) | 2006-05-19 |
KR101045730B1 (en) | 2011-06-30 |
CN1945807A (en) | 2007-04-11 |
KR20060121773A (en) | 2006-11-29 |
US20060076108A1 (en) | 2006-04-13 |
JP3129419U (en) | 2007-02-22 |
US8075729B2 (en) | 2011-12-13 |
TWI323018B (en) | 2010-04-01 |
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