US20070272359A1 - Apparatus for removing a halogen-containing residue - Google Patents
Apparatus for removing a halogen-containing residue Download PDFInfo
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- US20070272359A1 US20070272359A1 US11/779,974 US77997407A US2007272359A1 US 20070272359 A1 US20070272359 A1 US 20070272359A1 US 77997407 A US77997407 A US 77997407A US 2007272359 A1 US2007272359 A1 US 2007272359A1
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- chamber
- residue
- substrate
- residue removal
- halogen
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- 150000002367 halogens Chemical class 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 76
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- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 78
- 230000008569 process Effects 0.000 claims description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000376 reactant Substances 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 71
- 239000000460 chlorine Substances 0.000 description 24
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 23
- 229910052801 chlorine Inorganic materials 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 15
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 14
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 13
- 229910052794 bromium Inorganic materials 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 6
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- -1 e.g. Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Abstract
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
Description
- This application is a divisional of co-pending U.S. patent application Ser. No. 10/777,026, filed Feb. 11, 2004, which claims the benefit of U.S. Provisional Application No. 60/447,406 filed Feb. 14, 2003. Each of the aforementioned related patent applications is herein incorporated by reference.
- 1. Field of the Invention
- The present invention generally relates to a method and apparatus for fabricating devices on a semiconductor substrate. More specifically, the present invention relates to a method and apparatus for removing halogen-containing residue after plasma etching a conducting or semiconducting layer.
- 2. Description of the Related Art
- Ultra-large-scale integrated (ULSI) circuits may include more than one million electronic devices (e.g., transistors) that are formed on a semiconductor substrate, such as a silicon (Si) wafer, and cooperate to perform various functions within the device. Typically, the transistors used in the ULSI circuits are complementary metal-oxide-semiconductor (CMOS) field effect transistors. A CMOS transistor has a gate structure comprising a polysilicon gate electrode and gate dielectric and is disposed between a source region and drain regions that are formed in the wafer.
- Fabrication of the electronic devices comprises etch processes in which one or more layers of a film stack (e.g., film stack of the gate structure) are plasma etched and removed, either partially or in total. During plasma etch processes, the layers (e.g., layers of silicon, polysilicon, hafnium dioxide (HfO2), silicon dioxide (SiO2), and the like) are typically exposed to etchants comprising at least one halogen-containing gas, such as hydrogen bromide (HBr), chlorine (Cl2), carbon tetrafluoride (CF4), carbon monoxide (CO), and the like. Such processes cause a halogen-containing residue to build up on the surfaces of the etched features, etch masks, and elsewhere on the wafer.
- When exposed to a non-vacuumed environment (e.g., within factory interfaces that interconnect various wafer processing systems) and/or during consecutive processing, the halogen-containing residues release gaseous halogens and halogen-based reactants (e.g., bromine (Br2), chlorine, hydrogen chloride (HCl), and the like). The released halogens and halogen-based reactants cause corrosion and particle contamination of the interior of the processing systems and factory interfaces, as well as corrosion of metallic layers on the substrate. Cleaning of the processing systems and factory interfaces and replacement of the corroded parts is a time consuming and expensive procedure.
- Therefore, there is a need in the art for a method of removing a halogen-containing residue from a substrate during fabrication of CMOS transistors and other devices used in the integrated circuits.
- A method and apparatus for removing a halogen-containing residue from a substrate comprises pre-heating the substrate in an atmosphere of oxygen and nitrogen and exposing the pre-heated substrate in a remote plasma reactor to a gas (or gas mixture) comprising oxygen, nitrogen, and an optional hydrogen-containing gas.
- The teachings of the present invention can be readily understood by considering the following detailed description in conjunction with the accompanying drawings, in which:
-
FIG. 1 depicts a flow diagram of a method of removing a halogen-containing residue in accordance with the present invention; -
FIGS. 2A-2D , together, depict a sequence of schematic, cross-sectional views of a substrate having a gate structure of a field effect transistor being formed in accordance with the method ofFIG. 1 ; -
FIG. 3 depicts a schematic diagram of an exemplary remote plasma processing apparatus of the kind used in performing portions of the inventive method; and -
FIG. 4 depicts a schematic plan view of an integrated platform used to perform the method of the present invention. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures.
- It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
- The present invention is a method and apparatus for removing a halogen-containing residue (i.e., a residue containing bromine (Br), chlorine (Cl), and the like) after plasma etching a layer on a semiconductor substrate, e.g., silicon (Si) wafer.
- The invention increases the productivity of fabricating integrated electronic devices and is generally used to protect factory interfaces, processing equipment, and metallic layers of the thin film electronic devices from corrosion and particle contamination caused by halogen-based reactants (e.g., Br2, Cl2, and the like). Such reactants are formed when the wafers comprising a halogen-containing residue are exposed, even momentarily, to a non-vacuumed portion (e.g., atmospheric pressure portion) of a facility for fabricating devices on semiconductor wafers, e.g., semiconductor fabrication process.
-
FIG. 1 depicts a flow diagram of amethod 100 of removing a halogen-containing residue in accordance with the present invention. In one illustrative embodiment, themethod 100 comprises processes performed upon a film stack of a gate structure of a field effect transistor, such as a complementary metal-oxide-semiconductor (CMOS) transistor and the like. Although the invention is described for use during gate structure fabrication, the invention also finds use wherever a halogen-containing residue is to be removed, e.g., shallow trench isolation formation. For best understanding of this embodiment of the invention, the reader should refer simultaneously toFIGS. 1 and 2 A-2D. -
FIGS. 2A-2D , together depict a sequence of schematic, cross-sectional views of a substrate having a gate structure being formed in accordance with themethod 100 ofFIG. 1 . The cross-sectional views inFIGS. 2A-2D relate to individual processing steps that are used to form the gate structure. Conventional sub-processes (e.g., exposure and development of photoresist, wafer cleaning procedures, and the like) are well known in the art and, as such, are not shown inFIG. 1 andFIGS. 2A-2D . The images inFIGS. 2A-2D are not depicted to scale and are simplified for illustrative purposes. - The
method 100 starts atstep 101 and proceeds tostep 102 when afilm stack 202 is formed on a wafer 200 (FIG. 2A ). Thewafer 200, e.g., a silicon wafer, comprises doped source anddrain regions channel region 236 of the CMOS transistor. These regions are depicted for orientation purposes and are generally not formed until after the gate structure is formed. In an alternative embodiment, thewafer 200 may further comprise a spacer film (not shown). The spacer film generally is used to protect thechannel region 236 from diffusive contaminants (e.g., oxygen (O2) and the like) that may be contained in a gatedielectric layer 204. The spacer film may be formed from silicon dioxide (SiO2), silicon nitride (Si3N4), and the like. - The
film stack 202 comprises a doped polysilicon (Si)layer 206 and adielectric layer 204, e.g., hafnium dioxide (HfO2), silicon dioxide (SiO2), and the like. Other dielectric materials may also be used. In one illustrative embodiment, thepolysilicon layer 206 and dielectric 204 are formed to a thickness of about 500 to 6000 Angstroms and about 20 to 60 Angstroms, respectively.Such layers - At
step 104, a patternedmask 214 is formed on the polysilicon layer 206 (FIG. 2B ). Themask 214 is formed in theregion 220 to define the location and topographic dimensions of a gate electrode of the gate structure being formed usingmethod 100. Further, themask 214 protects thechannel region 236 and portions of the source anddrain regions region 220, while exposing theadjacent regions 222 of thewafer 200. Themask 214 is generally a hard mask formed from a material that is stable at the wafer temperatures up to 500° C. The suitable hard mask materials comprise dielectric materials, silicon dioxide, Advanced Patterning Film™ (APF) available from Applied Materials, Inc. of Santa Clara, and the like. In one illustrative embodiment, themask 214 is formed from silicon dioxide or silicon nitride. Alternatively, in some applications, themask 214 may be formed from photoresist. Examples of processes for applying various hard and photoresist masks are described, in commonly assigned U.S. patent application Ser. No. 10/245,130, filed Sep. 16, 2002 and U.S. patent application Ser. No. 09/590,322, filed Jun. 8, 2000, which are incorporated herein by reference. - At
step 106, thepolysilicon layer 206 is etched and removed in the regions 222 (FIG. 2C ). A remaining portion of thelayer 206 forms in the region 220 agate electrode 216. Step 106 uses themask 214 as an etch mask and may use thedielectric layer 204 as an etch stop layer. In one illustrative embodiment,step 106 performs a plasma etch process using a gas (or gas mixture) comprising at least one of hydrogen bromide (HBr), chlorine (Cl2), carbon tetrafluoride (CF4), and the like. Herein the terms “gas” and “gas mixture” are used interchangeably. Step 106 can be performed, for example, using a Decoupled Plasma Source (DPS) reactor of the CENTURA® integrated semiconductor wafer processing system available from Applied Materials, Inc. of Santa Clara, Calif. The DPS reactor uses an inductive source to produce high-density plasma and comprises a source of radio-frequency (RF) power to bias the wafer. - In one embodiment, using the DPS reactor,
step 106 provides hydrogen bromide at a rate of 20 to 300 sccm and chlorine at a rate of 20 to 300 sccm (i.e., a HBr:Cl2 flow ratio ranging from 1:15 to all HBr), as well as nitrogen (N2) at a rate of 0 to 200 sccm. Further,step 106 applies 200 to 3000 W of plasma power and 0 to 300 W of bias power and maintains a wafer temperature at 0 to 200° C. and a pressure in the reaction chamber at 2 to 100 mTorr. One exemplary process provides HBr at a rate of 40 sccm and Cl2 at a rate of 40 sccm (i.e., a HBr:Cl2 flow ratio of about 1:1), N2 at a rate of 20 sccm, 1100 W of plasma power, 20 W of bias power, a wafer temperature of 45° C., and a pressure of 4 mTorr. - During
step 106, the etched material combines with components of the etchant chemistry, as well as with components of themask 214 and by-products of the etch process to form a halogen-containingresidue 218. The halogen-containingresidue 218 deposits on the surfaces of thefilm stack 202 and elsewhere on thewafer 200. When exposed to atmospheric gases and water vapor, the halogen-containingresidue 218 releases (or “outgases”) gaseous reactants, such as bromine, chlorine, hydrogen chloride (HCl), and the like. Such reactants may cause corrosion and particle contamination of the processing equipment and factory interfaces, as well as metallic layers (e.g., layers of copper (Cu), aluminum (Al), and the like) on thewafer 200. Generally, wafers are transferred between the vacuumed and non-vacuumed regions of the production environment using an atmospheric pressure factory interface, such as, e.g., a factory interface of the CENTURA® system (discussed in reference toFIG. 4 below). The halogen-basedresidue 218 should be outgassed and/or the residue should be removed from thewafer 200 before the wafer is transferred to such factory interface. - In an alternative embodiment (not shown),
step 106 further etches and removes thedielectric layer 204 in theregions 222 to form the gate electrode 240. Step 106 may use a gas comprising a halogen gas (e.g., chlorine, hydrogen chloride, and the like) and a reducing gas, such as carbon monoxide (CO). Such etch process is disclosed in the commonly assigned U.S. patent application Ser. No. 10/194,566, filed Jul. 12, 2002, which is incorporated herein by reference. In this embodiment, step 106 also develops a halogen-containing residue that should be outgassed and/or removed before the wafer is transferred to the non-vacuumed factory interface. - At
step 108, thewafer 200 is transferred under vacuum using, e.g., a robot of the exemplary CENTURA® system to a remote plasma reactor, such as the AXIOM® reactor. The AXIOM® reactor is a remote plasma reactor in which the radio-frequency plasma is confined such that only reactive neutrals are allowed to enter a reaction volume of the process chamber. Such confinement scheme precludes plasma-related damage of the substrate or circuits formed on the substrate. In the AXIOM® reactor, a wafer backside may be heated radiantly by quartz halogen lamps or resistively heated or cooled using heat transfer (e.g., coolant circulating through the wafer support), such that the wafer temperature can be maintained at 20 to 450° C. Similar to the referred to above DPS reactor, the AXIOM® reactor may use an endpoint detection system. The AXIOM® reactor is described in detail in U.S. patent application Ser. No. 10/264,664, filed Oct. 4, 2002, which is herein incorporated by reference. The salient features of the reactor are briefly described below in reference toFIG. 3 . - At
step 110, the halogen-containingresidue 218 is outgassed to release the halogen-based reactants and, in most applications, removed from the wafer 200 (FIG. 2D ). Step 110 comprises sub-step 112 of pre-heating thewafer 200,decision sub-step 114, anddecision sub-step 116 of exposing the wafer to an oxygen-containing gas (e.g., oxygen, water vapor, and the like) and optionally an additive such as for example nitrogen, argon, helium, and the like. Alternatively, the wafer may be exposed to a hydrogen-containing gas (e.g., hydrogen, forming gas, water vapor, alkanes, alkenes, and the like) and optionally an additive such as oxygen, argon, helium and the like, orsub-step 118 of exposing the wafer to a gas comprising oxygen, nitrogen, and a hydrogen-containing gas, such as at least one of hydrogen (H2), water vapor (H2O), and the like. When themask 214 is formed from photoresist or APF (both not shown),sub-steps residue 218 and the mask. - During
step 110, the outgassed halogen-based reactants are converted in non-corrosive volatile compounds that are then pumped out from the processing reactor. Upon completion ofstep 110, thewafer 200 may be transferred for further processing to another processing environment using, e.g., the non-vacuumed factory interface that interconnects various vacuumed and non-vacuumed regions of a semiconductor fab. Alternatively, the wafer may be transferred to another processing chamber within the same processing system (e.g., CENTURA® system). - During
sub-step 112, the gas is energized to a plasma in the remote plasma reactor and thewafer 200 is pre-heated to a temperature of at least 150 degrees to about 400° C. Then, the wafer is maintained at such temperature during the remaining portion ofstep 110. Alternatively, the wafer may be heated and processed simultaneously for improved throughput. - In one embodiment, the
wafer 200 is pre-heated, to about 250° C. in a gas mixture of oxygen and nitrogen. Oxygen and nitrogen are provided for a duration of about 10-20 sec to the chamber at flow rates of about 5000 sccm and 500 sccm, respectively (i.e., at O2:N2flow ratio of about 10:1) at a pressure greater than 1 Torr. - At
sub-step 114, themethod 100 queries whether the halogen-containingresidue 218 comprises bromine. Generally, theresidue 218 may contain bromine whenstep 106 uses a bromine-containing gas, e.g., hydrogen bromide. In a computerized etch reactor, such as the exemplary DPS reactor, atsub-step 114, the decision making routine may be automated using, e.g., a residual gas analyzer (RGA). If the query ofstep 116 is affirmatively answered, themethod 100 proceeds to sub-step 116 or, when the query ofsub-step 114 is negatively answered, themethod 100 proceeds to sub-step 118. - At
sub-step 116, thewafer 200 is exposed to reactants that are formed from a source gas by the plasma source of a remote plasma reactor, e.g.,source 306 of the AXIOM® reactor. In one illustrative embodiment, sub-step 116 provides the source gas comprising oxygen and nitrogen at flow rates of about 1000 to 9000 sccm and about 100 to 900 sccm respectively (i.e at O2:N2 flow ratio of about 10:1). Further, sub-step 116 applies 3000 to 5000 W at about 200 to 600 kHz to form the remote plasma, maintains a wafer temperature between at least 150 and about 400° C. and a gas pressure in the process chamber at about 0.5 to 2 Torr. The duration ofsubstep 116 is generally about 15 to 60 sec. - One exemplary process provides 3500 sccm of O2 and 350 sccm of N2 (i.e., a O2:N2 flow ratio of about 10:1), 5000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.7 Torr, and has a duration of 20 sec. Such process reduces the amount of bromine on the 300 mm wafer from about 250 μg (photoresist mask 214) or about 50-70 μg (hard mask 214) to about or below the detection limit of 3-5 μg. It is believed that, during
sub-step 116, the remaining portion (i.e., traces) of bromine becomes oxidized and trapped on the sidewalls of thepolysilicon electrode 216. - When the halogen-containing
residue 218 comprises a combination of chlorine and bromine, the process ofsub-steps residue 218 comprises chlorine and does not comprise bromine (e.g., step 106 uses a bromine-free gas), the amount of chlorine on thewafer 200 may be as high as 1000 to 3000 μg. In this application, sub-step 116 can reduce the amount of chlorine on the wafer only by a factor of 5-6 (i.e., to about 200-600 μg). - At
sub-step 118, thewafer 200 having the halogen-containingresidue 218 that does not comprise bromine but comprises chlorine is exposed to the reactants formed by the plasma source of the remote plasma reactor from a source gas comprising oxygen, and a reducing gas to facilitate forming volatile components. The reducing gas may consist of a hydrogen-containing gas such as hydrogen, forming gas (2-5% hydrogen in nitrogen, and in one embodiment, about 4% hydrogen in nitrogen), water vapor, and the like. - In one illustrative embodiment, sub-step 118 provides oxygen at a flow rate of about 1500 to 10,000 sccm and hydrogen-containing gas at a flow rate of about 10 to 2000 sccm (i.e., at O2:H2 flow ratio of from about 150:1 and 5:1, and H2:(H2 or H2O) flow ratio of from about 2:1 and 1:1). Further, sub-step 118 applies 3000 to 6000 W at about 200 to 600 kHz to form the remote plasma and maintains a wafer temperature between at least 50 and about 450° C. and a gas pressure in the process chamber at about 0.5 to 2 Torr. The duration of
sub-step 118 is generally about 15 to 60 sec. - One exemplary process provides 3500 sccm of O2 and 800 sccm of forming gas (i.e. O2:forming gas flow ratio of about 5:1, 5000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.7 Torr, and has a duration of 20 to 40 sec. Such process reduces the amount of chlorine on the
wafer 200 from about 2000-3000 μg to about 7-10 μg. - One exemplary process provides 1000 to 9000 sccm of O2 and 100 to 3000 sccm of water vapor, (i.e. O2:water vapor ratio of about 10:1 to 3:1), 1000 to 6000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.5 to 4 Torr, and has a duration of 20 to 60 sec. Such process reduces the amount of chlorine on the
wafer 200 from about 2000-3000 μg to about 7-10 μg. - Another exemplary process provides 3500 sccm of O2 and 500 sccm of water vapor (i.e. O2:water vapor flow ratio of 7:1), 5000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.7 Torr, and has a duration of 20 sec. Such process reduces the amount of chlorine on the
wafer 200 from about 2000-3000 μg to about 7-10 μg. - Another exemplary process provides 500 to 5000 sccm of forming gas, 5000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.7 Torr, and has a duration of 20 to 40 sec. Such process reduces the amount of chlorine on the
wafer 200 from about 2000-3000 μg to about 7-10 μg. - In one particular embodiment, an exemplary process provides 1000 sccm of forming gas, 5000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.7 Torr, and has a duration of 20 to 40 sec. Such process reduces the amount of chlorine on the
wafer 200 from about 2000-3000 μg to about 7-10 μg. - Another exemplary process provides 100 to 3000 sccm water vapor, 1000 to 6000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.5 to 4 Torr, and has a duration of 20 to 60 sec. Such process reduces the amount of chlorine on the
wafer 200 from about 2000-3000 μg to about 7-10 μg. - In one particular embodiment, an exemplary process provides 500 sccm of water vapor, 5000 W of plasma power, a wafer temperature of 250° C., a gas pressure of 0.7 Torr, and has a duration of 20 sec. Such process reduces the amount of chlorine on the
wafer 200 from about 2000-3000 μg to about 7-10 μg. - Robust rapid bromine removal requires a high temperature (150-400° C.) and plasma. Inert plasma such as argon, nitrogen, helium and the like may be used. The oxidizing plasma such as O2 also removes photoresist for cases where a photoresist mask is present. Other oxidizers such as water vapor and ozone are also suitable. Oxidizing gases also oxidize all surfaces of the wafer. Additive gases such as nitrogen, argon, helium and water vapor and the like enhance the lifetime of the oxygen radicals.
- Robust rapid chlorine (no bromine in etch process) removal requires a high temperature (150-400° C.) and a hydrogen containing plasma. A purely reducing plasma such as hydrogen, forming gas and water vapor and the like may be used. The oxidizing plasma such as O2, water vapor and ozone also removes photoresist for cases where a photoresist mask is present. The oxidation process creates an oxide barrier between any residual chlorine (not removed by the reducing gas) and the atmospheric moisture when the wafer is removed from the vacuum environment. One embodiment uses gas mixture comprising oxygen and forming gas for both chlorine reduction and oxide barrier formation.
- High productivity of
step 110 allows, using an integrated semiconductor wafer processing system such as the CENTURA® system, to have one remote plasma reactor (AXIOM® reactor) for removing the halogen-containing residue and several plasma etch reactors (e.g., the DPS reactors) for etching the polysilicon and high-K dielectrics (discussed in reference toFIG. 4 below). Alternatively, this process is suitable for use during STI fabrication. - At
step 120, themethod 100 ends. -
FIG. 3 depicts a schematic diagram of theAXIOM® reactor 300 that may be used to practice portions of themethod 100. Thereactor 300 comprises aprocess chamber 302, aremote plasma source 306, and acontroller 308. - The
process chamber 302 generally is a vacuum vessel, which comprises afirst portion 310 and asecond portion 312. In one embodiment, thefirst portion 310 comprises asubstrate pedestal 304, asidewall 316 and avacuum pump 314. Thesecond portion 312 comprises alid 318 and a gas distribution plate (showerhead) 320, which defines agas mixing volume 322 and areaction volume 324. Thelid 318 andsidewall 316 are generally formed from a metal (e.g., aluminum (Al), stainless steel, and the like) and electrically coupled to aground reference 360. - The
substrate pedestal 304 supports a substrate (wafer) 326 within thereaction volume 324. In one embodiment, thesubstrate pedestal 304 may comprise a source of radiant heat, such as gas-filledlamps 328, as well as an embeddedresistive heater 330 and aconduit 332. Theconduit 332 provides cooling water from asource 334 to the backside of thesubstrate pedestal 304. The wafer sits on the pedestal surface. Gas conduction transfers heat from thepedestal 304 to the wafer 326. The temperature of the wafer 326 may be controlled between about 20 and 400° C. - The
vacuum pump 314 is adapted to anexhaust port 336 formed in the sidewall or abottom wall 316 of theprocess chamber 302. Thevacuum pump 314 is used to maintain a desired gas pressure in theprocess chamber 302, as well as evacuate the post-processing gases and other volatile compounds from the chamber. In one embodiment, thevacuum pump 314 comprises athrottle valve 338 to control a gas pressure in theprocess chamber 302. - The
process chamber 302 also comprises conventional systems for retaining and releasing the wafer 326, detecting an end of a process, internal diagnostics, and the like. Such systems are collectively depicted inFIG. 3 assupport systems 340. - The
remote plasma source 306 comprises apower source 346, agas panel 344, and aremote plasma chamber 342. In one embodiment, thepower source 346 comprises a radio-frequency (RF)generator 348, atuning assembly 350, and anapplicator 352. TheRF generator 348 is capable of producing of about 200 to 6000 W at a frequency of about 200 to 600 kHz. Theapplicator 352 is inductively coupled to theremote plasma chamber 342 to inductively couple RF power to process gas (or gas mixture) 364 to form aplasma 362 in the chamber. In this embodiment, theremote plasma chamber 342 has a toroidal geometry that confines the plasma and facilitates efficient generation of radical species, as well as lowers the electron temperature of the plasma. In other embodiments, theremote plasma source 306 may be a microwave plasma source, however, the stripping rates are generally higher using the inductively coupled plasma. - The
gas panel 344 uses aconduit 366 to deliver theprocess gas 364 to theremote plasma chamber 342. The gas panel 344 (or conduit 366) comprises means (not shown), such as mass flow controllers and shut-off valves, to control gas pressure and flow rate for each individual gas supplied to thechamber 342. In theplasma 362, theprocess gas 364 is ionized and dissociated to form reactive species. - The reactive species are directed into the mixing
volume 322 through aninlet port 368 in thelid 318. To minimize charge-up plasma damage to devices on the wafer 326, the ionic species of theprocess gas 364 are substantially neutralized within the mixingvolume 322 before the gas reaches thereaction volume 324 through a plurality ofopenings 370 in theshowerhead 320. - The
controller 308 comprises a central processing unit (CPU) 354, amemory 356, and asupport circuit 358. TheCPU 354 may be of any form of a general-purpose computer processor used in an industrial setting. Software routines can be stored in thememory 356, such as random access memory, read only memory, floppy or hard disk, or other form of digital storage. Thesupport circuit 358 is conventionally coupled to theCPU 354 and may comprise cache, clock circuits, input/output sub-systems, power supplies, and the like. - The software routines, when executed by the
CPU 354, transform the CPU into a specific purpose computer (controller) 308 that controls thereactor 300 such that the processes are performed in accordance with the present invention. The software routines may also be stored and/or executed by a second controller (not shown) that is located remotely from thereactor 300. -
FIG. 4 is a schematic, top plan view of the exemplary CENTURA® integratedprocessing system 400. The particular embodiment of thesystem 400 is provided to illustrate the invention and should not be used to limit the scope of the invention. - The
system 400 generally includes load-lock chambers 422,process chambers robot 430. The load-lock chambers 422 protect vacuumed plenum 428 (or buffer chamber) of thesystem 400 from atmospheric contaminants. Therobot 430 uses ablade 434 to transfer the substrates between the load lock chambers and process chambers. At least one of the process chambers is a DPS chamber described above in reference to step 106. Further, one or more process chambers may be the AXIOM® chambers described above in reference to step 110. Optionally, at least one of the process chambers may be an annealing chamber or other thermal processing chamber, such as the RADIANCE™ chamber available from Applied Materials, Inc (also mention HART etch chamber from AMHT). Thesystem 400 may also comprise other types of process chambers and/or interfaces to processing systems. Further, thesystem 400 may comprise one or moreexternal metrology chambers 418 connected thereto using, e.g., aterminal 426 of afactory interface 424. Thefactory interface 424 is an atmospheric pressure interface that is used to transfer cassettes with the pre-processed and post-processed wafers between various processing systems and manufacturing regions within a semiconductor fabrication process. - The
system controller 436 is coupled to and controls each module of theintegrated processing system 400. Generally thesystem controller 436 controls all aspects of operation of thesystem 400 using a direct control of modules and apparatus of thesystem 400, or alternatively, by controlling the computers associated with these modules and apparatus. In operation, thesystem controller 436 enables feedback from the respective modules and apparatus to optimize substrate throughput. - The
system controller 436 comprises a central processing unit (CPU) 438, amemory 440, and asupport circuit 442. TheCPU 438 may be one of any form of a general purpose computer processor that can be used in an industrial setting. Thesupport circuit 442 is conventionally coupled to theCPU 438, and may comprise cache, clock circuits, input/output subsystems, power supplies, and the like. The software routines, when executed by theCPU 438, transform the CPU into a specific purpose compute (controller) 436. The software routines may also be stored and/or executed by a second controller (not shown) that is located remotely from thesystem 400. - One example of a possible configuration of the
system 400 for removing halogen-containing residue in accordance with the present invention includes two load-lock chambers (chambers 422), the PRECLEAN II™ chamber (chamber 410), the AXIOM® chamber (chamber 414), three DPS chambers (chambers - The invention may be practiced in other semiconductor systems wherein the processing parameters may be adjusted to achieve acceptable characteristics by those skilled in the arts by utilizing the teachings disclosed herein without departing from the spirit of the invention.
- Although the foregoing discussion refers to the fabrication of the gate structure of a field effect transistor, fabrication of other devices used in the integrated circuits can benefit from the invention.
- While the foregoing is directed to the illustrative embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (18)
1. An integrated processing system for removing from a substrate a halogen-containing residue, the residue formed during etching of the substrate, the system comprising:
a central transfer chamber;
at least one load lock chamber coupled to the central transfer chamber;
an etch chamber coupled to the central transfer chamber;
a residue removal chamber coupled to the central transfer chamber and adapted to remove the halogen-containing residue, the residue removal chamber having a remote plasma source coupled thereto and a substrate heater configured to maintain the temperature of a substrate disposed in the residue removal chamber between 50° C. and 400° C.;
a robot disposed in the transfer chamber and adapted to transfer the substrate between the load lock chamber, the etch chamber and the residue removal chamber; and
a controller for controlling operation of the system.
2. The system of claim 1 , further comprising:
at least one of an oxygen-containing or a hydrogen-containing gas source coupled to the residue removal chamber for providing a gas mixture thereto.
3. The system of claim 1 , further comprising:
a power source inductively coupled to the remote plasma source to form a plasma from the gas mixture.
4. The system of claim 3 , wherein the power source is configured to produce an RF signal having a frequency of about 200 to 600 kHz.
5. The system of claim 3 , wherein the power source is capable of producing an RF signal having a power of about 200 to 6000 W.
6. The system of claim 3 , wherein the power source further comprises a toroidal geometry that confines the plasma.
7. The system of claim 3 , wherein the residue removal chamber further comprises:
a reaction volume for processing a substrate therein; and
a mixing volume where ionic species of a process gas are substantially neutralized during processing before the process gas reaches the reaction volume.
8. The system of claim 1 , wherein the remote plasma source further comprises a microwave plasma source.
9. The system of claim 1 , further comprising:
a pre-clean chamber coupled to the central transfer chamber;
two additional etch chambers coupled to the central transfer chamber; and
a metrology chamber coupled to the load lock chamber.
10. The system of claim 1 , wherein the controller further comprises a computer readable media having instructions that, when executed, cause the residue removal chamber to:
heat the etched substrate disposed in the residue removal chamber to a temperature of at least 50° C.; and
expose the heated substrate to reactants formed by the remote plasma source to remove the halogen-containing residue.
11. The system of claim 1 , wherein the controller further comprises a computer readable media having instructions that, when executed, cause the residue removal chamber to:
heat the etched substrate disposed in the residue removal chamber to a temperature of at least 50° C. in a non-plasma gas mixture comprising oxygen and nitrogen; and
expose the heated substrate to a plasma that removes the halogen-containing residue.
12. The system of claim 1 , wherein the controller further comprises a computer readable media having instructions that, when executed, cause the residue removal chamber to:
heat the etched substrate disposed in the residue removal chamber to a temperature of at least 50° C.; and
expose the heated substrate to a plasma formed from hydrogen, water vapor, oxygen, and nitrogen that removes the halogen-containing residue.
13. An integrated processing system for removing from a substrate a halogen-containing residue, the residue formed during etching of the substrate, the system comprising:
a central transfer chamber having a substrate transfer robot disposed therein;
at least one load lock chamber coupled to the central transfer chamber;
three etch chambers coupled to the central transfer chamber;
a residue removal chamber coupled to the central transfer chamber and adapted to remove the halogen-containing residue, the residue removal chamber having a substrate heater configured to maintain the temperature of a substrate disposed in the residue removal chamber between 50° C. and 400° C. and a remote plasma source coupled to the residue removal chamber and having an inductively coupled power source to form a plasma from the gas mixture;
at least one of an oxygen-containing or a hydrogen-containing gas source coupled to the residue removal chamber for providing a gas mixture thereto; and
a controller for adjusting the parameters of the system as a function of the measurements performed by an optical metrology tool.
14. The system of claim 13 , further comprising:
a pre-clean chamber coupled to the central transfer chamber.
15. The system of claim 13 , wherein the power source is configured to produce about 200 to 6000 W of RF power having a frequency of about 200 to 600 kHz.
16. The system of claim 13 , wherein the controller further comprises a computer readable media having instructions that, when executed, cause the residue removal chamber to:
heat the etched substrate disposed in the residue removal chamber to a temperature of at least 50° C.; and
expose the heated substrate to reactants formed by the remote plasma source to remove the halogen-containing residue.
17. The system of claim 13 , wherein the controller further comprises a computer readable media having instructions that, when executed, cause the residue removal chamber to:
heat the etched substrate disposed in the residue removal chamber to a temperature of at least 50° C. in a non-plasma gas mixture comprising oxygen and nitrogen; and
expose the heated substrate to a plasma that removes the halogen-containing residue.
18. The system of claim 13 , wherein the controller further comprises a computer readable media having instructions that, when executed, cause the residue removal chamber to:
heat the etched substrate disposed in the residue removal chamber to a temperature of at least 50° C.; and
expose the heated substrate to a plasma formed from hydrogen, water vapor, oxygen, and nitrogen that removes the halogen-containing residue.
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Also Published As
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US20070254489A1 (en) | 2007-11-01 |
US20040203251A1 (en) | 2004-10-14 |
US7374696B2 (en) | 2008-05-20 |
US7846347B2 (en) | 2010-12-07 |
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