US20070289871A1 - Electrolytic capacitor for electric field modulation - Google Patents
Electrolytic capacitor for electric field modulation Download PDFInfo
- Publication number
- US20070289871A1 US20070289871A1 US11/452,839 US45283906A US2007289871A1 US 20070289871 A1 US20070289871 A1 US 20070289871A1 US 45283906 A US45283906 A US 45283906A US 2007289871 A1 US2007289871 A1 US 2007289871A1
- Authority
- US
- United States
- Prior art keywords
- capacitive element
- substrate
- electrolyte
- plating
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
Definitions
- Embodiments of the invention generally relate to methods and apparatus for modulating of electric field in an electrochemical process.
- One embodiment of the invention relates to an electrolytic capacitor disposed in an electrochemical processing cell, wherein the electrolytic capacitor is configured to modulate the electric field without inducing deleterious electrochemical reactions.
- Metallization of high aspect ratio 90 nm and smaller sized features, such as 45 nm, is a foundational technology for future generations of integrated circuit manufacturing processes. Metallization of these features is generally accomplished via an electrochemical plating process.
- electrochemical plating of these features presents several challenges to conventional gap fill methods and apparatuses.
- One such problem, for example, is that electrochemical plating processes generally require a conductive seed layer to be deposited onto the features to support the subsequent plating process.
- these seed layers have had a thickness of between about 1000 ⁇ and about 2500 ⁇ ; however, as a result of the high aspect ratios of 90 nm features, seed layer thicknesses must be reduced to less than about 300 ⁇ .
- This reduction in the seed layer thickness has been shown to cause a “terminal effect,” which is generally understood to be decrease in the deposition rate of an electrochemical plating (ECP) process as a function of the distance from the electrical contacts at the edge of a substrate being plated.
- the impact of the terminal effect is that the deposition thickness near the edge of the substrate is substantially greater than the deposition thickness near the center of the substrate.
- the increase in deposition thickness near the edge of the substrate as a result of the terminal effect presents difficulties to subsequent processes, e.g., polishing, bevel cleaning, etc., and as such, minimization of the terminal effect is desired.
- Active thief electrodes have been used to adjust the current density near the perimeter of a substrate during a plating process to overcome the terminal effect generated by thin seed layers in electrochemical plating processes.
- An active thief electrode in conventional plating cells is generally configured to pass a current into the solution using an independent power supply. The current passed from the active thief modulates the strength, shape, or direction of the electric field in the solution to achieve desired results. Because a current passes from the thief/auxiliary electrode to the solution, an electrochemical reaction occurs at the interface between the electrode and the solution. This electrochemical reaction may cause several undesired complications. For example, the electrode may need to be cleaned and/or replaced frequently, defects may generate loose metal particles and other products from the electrochemical reaction, and bath additives may be electrochemically broken down.
- the present invention is directed to an electrochemical plating cell with a capacitive element that satisfies these needs.
- One embodiment of the invention provides an apparatus for electrochemically processing a substrate with an electrolyte.
- the apparatus comprises a capacitive element in contact with the electrolyte, wherein the capacitive element is independently biased from the substrate.
- the apparatus further comprises a substrate support member configured to support the substrate, and a counter electrode in contact with the electrolyte, wherein the counter electrode is coupled to a power supply configured to provide an electric bias between the substrate and the counter electrode.
- Embodiments of the invention further provide an apparatus for electroplating a substrate.
- the apparatus comprises a fluid basin configured to contain a plating solution therein, an anode in fluid communication with the plating solution, wherein the anode is adapted to a power supply configured to apply a plating bias between the anode and the substrate, and a capacitive element in fluid communication with the plating solution.
- Another embodiment of the invention further provides a method for processing a substrate electrochemically with an electrolyte.
- the method comprises providing a counter electrode in contact with the electrolyte, providing a capacitive element in contact with the electrolyte, contacting the substrate with the electrolyte, processing the substrate by applying an electric bias between the substrate and the counter electrode, and passing a current to the capacitive element during processing the substrate.
- FIG. 1 illustrates a schematic view of one embodiment of an electrochemical processing cell of the present invention.
- FIG. 2A illustrates enlarged view of an interface of an electrolytic capacitor and an electrolyte of the electrochemical processing cell of FIG. 1 .
- FIG. 2B illustrates enlarged view of an interface of an electrolytic capacitor and an electrolyte of the electrochemical processing cell of FIG. 1 .
- FIG. 3 illustrate a schematic circuit of one embodiment of an electrochemical processing cell of the present invention.
- FIG. 4 illustrates a sectional view of one embodiment of an electroplating cell of the present invention.
- FIGS. 5A-D illustrates exemplary charging/discharging sequences for an electrolytic capacitor used in an electroplating cell of the present invention.
- FIG. 6 illustrates exemplary profiles of plating rate may be obtained by the electroplating cell of the present invention.
- the present invention generally provides an electrochemical plating cell, with an encased counter electrode assembly in fluid communication with the cathode compartment, configured to uniformly plate metal onto a substrate.
- FIG. 1 illustrates a schematic view of an electrochemical processing cell 100 .
- An electric field in the electrochemical processing cell 100 may be adjusted without having to pass a current into the electrolyte.
- the electrochemical processing cell 100 generally comprises a fluid volume 102 configured to contain an electrolyte 110 .
- the fluid volume 102 is defined by a fluid basin 101 .
- the fluid volume 102 may be defined by a permeable and porous structure, for example, a polishing pad in an electrochemical polishing system.
- Two electrodes are configured to be in contact with the electrolyte 110 contained in the fluid volume 102 during process.
- a counter electrode 103 is disposed in the fluid basin 101 and a substrate support member 105 is configured to form a working electrode along with a substrate 104 supported therein.
- the substrate support member 105 and the substrate 104 are in electrical contact on via one or more contact pins 106 .
- the substrate support member 105 is configured to transport the substrate 104 in and out the fluid volume 102 .
- a processing power supply 108 is coupled between the substrate support member 105 and the counter electrode 103 .
- the electrochemical processing cell 100 is configured to electroplate a metal layer on the substrate 104 , thus the substrate support member 105 is cathodically biased and the counter electrode 103 serves as an anode.
- the electrochemical processing cell 100 is configured to electropolishing a metal layer from the substrate 104 , thus the substrate support member 105 is positively biased, and the counter electrode 103 is negatively biased. It should be noted that electroplating and electropolishing processes can be performed alternatively in the electrochemical processing cell 100 by simply alternating directions of the processing power supply 108 .
- an electric field may be generated between the counter electrode 103 and the assembly of the substrate 104 and the substrate support member 105 .
- a capacitive element 107 is disposed in the fluid volume 102 and configured to have an interface in contact with the processing electrolyte during processing.
- the capacitive element 107 may be charged and discharged by a capacitor power supply 109 .
- the power supplies 108 and 109 may be independent controllable outputs of a multiple power supply.
- the capacitive element 107 is configured to have a large surface area and high electrolytic capacitance. When the capacitive element 107 is charged, a large amount of charge can be stored within the interface of the capacitive element 107 and the electrolyte. Therefore, the strength, shape, or direction of the electric field in the fluid volume 102 may be modulated by charging and discharging the capacitive element 107 disposed therein.
- FIGS. 2A and 2B illustrate enlarged views of an interface of the capacitive element 107 and the electrolyte 110 of the electrochemical processing cell 100 shown in FIG. 1 .
- the capacitive element 107 has a surface 111 which is in contact with the electrolyte 110 .
- the electrolyte 110 contains positive ions 113 and negative ions 114 .
- the capacitive element 107 is being charged negatively.
- a current of electrons is flowing into the capacitive element 107 from the capacitor power supply 109 .
- Electrons 112 accumulate inside the capacitive element 107 near the surface 111 .
- the electrons 112 attract the positive ions 113 in the electrolyte 110 producing positive-negative poles disturbed relative to each other across the surface 111 over an extremely short distance. This phenomenon is known as an “electrical double-layer”. While the positive ions 113 are flowing to the surface 111 , a current is generated in the electrolyte 110 near the surface 111 .
- the current can be supplied to the capacitive element 107 in such a way that voltage difference between the capacitive element 107 and the electrolyte 110 do not exceed an overvoltage for the onset of faradic reactions, such as metal depositions and breakdown of electrolytic compound, in the electrolyte 110 . Hence, faradic reactions do not occur near the surface 111 .
- the voltage of the capacitive element 107 may be controlled by flowing a predetermined current for a predetermined period of time using the following relation:
- the electric field in the electrolyte 110 can be modified by charging the capacitive element 107 disposed therein without inducing electrochemical reactions.
- the electric field of the electrolyte 110 may be adjusted while the charged capacitive element 107 is being discharged. As shown in FIG. 2B , the electrons 112 are flowing out of the capacitive element 107 while a current is applied. The “electrical double-layer” neutralizes or switches signs releasing the positive ions 113 back to the electrolyte 110 , thus, creates another current in the electrolyte 110 .
- the capacitive element 107 may consist of a highly porous material, such as carbon aerogels, embedded in an inert but conductive matrix such as carbon paper.
- a carbon aerogel is a monolithic three-dimensional mesoporous network of carbon nanoparticles obtained by pyrolysis of organic aerogels based on resorcinol-formaldedhyde.
- Carbon aerogels have high surface area (on the order of several m 2 /g), low density, good electrical conductivity, high electrolytic capacitance (several F/g). It should be noted that other materials can also be used to make a capacitive element for an electrochemical system.
- the capacitive element 107 may be encased in a polymeric sheath.
- a capacitive structure such as the capacitive element 107 in FIG. 1
- an electrochemical processing system to modulate the strength, shape or direction of the processing electric field to achieve desired results, such as improving deposit uniformity, protecting substrates from corrosion, or enabling nucleation for an electrodeposition process.
- the capacitive element s of the present invention may be used to achieve different purposes by using different designs, applying different charging/discharging sequences, or positioning in different locations.
- FIG. 3 illustrates one embodiment of an electrochemical processing cell of the present invention in form of an electronic circuit 300 .
- a substrate 304 having a layer of conductive material on a surface is generally connected to a processing power supply 308 .
- the power supply 308 is further connected to a counter electrode 303 disposed in an electrolyte 310 .
- the electrolyte 310 may be considered as a network of resistors 310 R.
- the substrate 304 When the substrate 304 is immerged into the electrolyte 310 , the substrate 304 , the processing power supply 308 , the counter electrode 303 and the network of resisters 310 R form a closed circuit, and a processing current i p flows in the closed circuit for processing, i.e., plating and/or deplating, the conductive layers on the substrate 304 .
- a capacitive element disposed in the electrolyte 310 is equivalent of a capacitor 307 having a first electrode 307 1 and a second electrode 307 2 .
- the first electrode 307 is a chargeable area inside the surface of the capacitive element and the second electrode 307 2 is a chargeable area outside the capacitor element in the electrolyte 310 .
- the capacitor 307 forms another circuit with the network of resisters 310 R, the counter electrode 303 and a capacitor power supply 309 .
- a capacitor current i c flows between the networks of the resisters 310 R and the capacitor 307 .
- the capacitor current i c alters the electric fields in the electrolyte 310 , therefore, changing the processing current i p at least in the region near the capacitor element.
- the first electrode 307 1 is connected to the negative terminal of the capacitor power supply 309 , thus the first electrode 307 1 is configured to be charged negatively.
- the current i c flows from the network of resisters 310 to the second electrode 307 2 .
- the current i c flows from the second electrode 307 2 to the network of resisters 310 .
- the capacitor power supply 309 may be connected in a reversed manner so that the capacitor 307 can be charged either positively or negatively.
- a capacitor element may be used to achieve different effects to an electrochemical processing cell depending charging and discharging sequences applied to the capacitor. More detailed description may be found in FIGS. 5A-D .
- FIG. 4 illustrates a sectional view of one embodiment of an electrochemical processing cell 400 .
- the electrochemical processing cell 400 is illustratively described below in reference to modification of a SlimCellTM system, available from Applied Materials, Inc., Santa Clara, Calif. Detailed description of an electroplating cell used in a SlimCellTM may be found in co-pending U.S. patent application Ser. No. 10/268,284, filed on Oct. 9, 2002, entitled “Electrochemcial Processing Cell”, which is herein incorporated by reference.
- the electrochemical processing cell 400 generally includes a basin 401 defining a processing volume 402 configured to contain a plating solution.
- An anode 403 is generally disposed near the bottom of the processing volume 402 .
- a membrane assembly 406 containing an ionic membrane is generally disposed on top of the anode 403 forming an anodic chamber near the anode 403 .
- a diffuser plate 405 configured to direct the fluid flow in the processing volume 402 may be positioned above the membrane assembly 406 .
- the electrochemical processing cell 400 further comprises a substrate support member 410 configured to transfer a substrate 404 and contact the substrate 404 electrically via one or more contact pins 411 near the edge of the substrate 404 .
- a processing power supply 408 is coupled between the contact pins 411 and the anode 403 .
- the substrate support member 410 transders the substrate 404 into the processing volume 402 so that the substrate 404 is in contact with or immerged in a plating solution contained therein.
- the processing power supply 408 provides the substrate 404 , via the contact pins 411 , a plating bias relative to the anode 403 .
- An electric field is generated between the substrate 404 and the anode 403 and one or more conductive materials may be plated on the substrate 404 .
- a capacitive element 407 is disposed in the processing volume 402 .
- the capacitive element 407 is configured to adjust the electric field between the substrate 404 and the anode 403 .
- the capacitive element 407 is shaped like a ring and positioned in a way that when the substrate 404 is in processing position, the capacitive element 407 is near the edge of the substrate 404 .
- the capacitive element 407 is connected to a capacitor power supply 409 which is also connected to the anode 403 .
- the capacitor power supply 409 is configured to charge and discharge the capacitive element 407 .
- the capacitor power supply 409 is in electrical communication with the contact pins 411 and the capacitive element 407 .
- the capacitive element 407 is configured to adjust the electric field between the substrate 404 and the anode 403 during electroplating to improve plating uniformity.
- the capacitor element 407 may have a variety of shapes and locations in an electrochemical processing cell.
- the capacitor element 407 may include a plurality of capacitors in strips, or a continuous ring, or other shapes.
- the capacitor element 407 may be disposed on the diffuser plate 405 , attached to the substrate support member 410 near the contact pins 411 , or near the substrate.
- An electroplating process performed in an electroplating cell may be generally divided into four stages.
- a substrate support member such as the substrate support member 410
- a substrate may be loaded into the substrate support member.
- the substrate support member transfer and immerge the substrate into a plating solution in a processing volume, such as the processing volume 402 of FIG. 4 .
- a plating process is performed by applying a plating bias to the substrate an anode by a processing power supply, such as the processing power supply 408 of FIG. 4 .
- the plating process is completed and the substrate support member transferred the substrate out of the plating solution.
- FIGS. 5A-D illustrates exemplary charging/discharging sequences for a capacitor element used in an electrochemical processing cell of the present invention.
- FIG. 5A illustrates an exemplary charging/discharging sequence for a capacitor element, such as the capacitor element 407 of FIG. 4 , during an electroplating process.
- the horizontal axis indicates time and the vertical axis indicates voltage.
- the stages I-IV indicate the plating stages described above.
- Curve 501 represents changes of supply voltage supplied to the capacitor element 407 by the capacitor power supply 409 during the plating process. In stage I, from time zero to t1, the curve 501 increases from V 1A to V 2A , indicating the capacitive element 407 is being charged positively.
- the charging may be performed by supplying to the capacitive element 407 a predetermined current for a predetermined time period. In stage I, the substrate 404 is not in contact with the electrolyte.
- stage II when the substrate 404 is being immersed into the electrolyte, the capacitive element 407 is kept in the positively voltage V A .
- stage III the plating processing starts in the electrochemical processing cell 400 and the capacitive element 407 is discharged as a function of time in a controlled manner to adjust the electric field in the vicinity of the capacitive element 407 , i.e. near the edge of the substrate.
- the voltage is lowered from V 3A to V 4A in a linear manner as discharge continues.
- the discharge continuous until the capacitive element 407 reaches a neutral condition or a predetermined voltage.
- the discharge of the capacitive element 407 may cover the whole process of plating.
- the discharge may only occur at the beginning of the plating process when the seed layer is thin and the terminal effect is most obvious.
- the capacitive element 407 is kept static, for example in the neutral condition, while the plating process is completing and the substrate 404 is removed from the electrolyte.
- the charge and discharge process may start again for a new substrate to be plated.
- FIG. 5B illustrates another exemplary charging/discharging sequence for a capacitor element, such as the capacitor element 407 of FIG. 4 , during an electroplating process.
- Curve 502 represents changes of supply voltage supplied to the capacitor element by the capacitor power supply 409 during the plating process.
- stage I while the substrate is not in the electrolyte, the curve 502 decreases from V 1B to V 2B , indicating the capacitive element 407 is being charged negatively.
- stage II when the substrate 404 is being immersed into the electrolyte, the capacitive element 407 is kept in the negatively charged voltage VB.
- the plating processing starts in the electrochemical processing cell 400 and the capacitive element 407 is discharged as a function of time in a controlled manner.
- stage IV the capacitive element 407 is kept static, for example in the neutral condition, while the plating process is completing and the substrate 404 is removed from the electrolyte. The charge and discharge process may start again for a new substrate to be plated.
- the capacitive element is discharged in stage I and charged positively in stage III, i.e. the plating stage. Therefore, during electroplating, a capacitive element is positively charged, which generates a current outward from the capacitive element in the electrolyte, therefore increasing a plating rate near the capacitive element.
- the capacitive element is discharged in stage I and charged negatively in stage III, i.e. the plating stage. Therefore, during electroplating, a capacitive element is negatively charged, which generates a current towards the capacitive element in the electrolyte, therefore decreasing a plating rate near the capacitive element.
- FIG. 6 illustrates exemplary profiles of plating rates that may be obtained by an electroplating cell having a capacitive element near the edge of the substrate being processed.
- the horizontal axis indicates the distance from the center of the substrate and the vertical axis indicates a plating rate.
- Curves 620 - 625 illustrate a plurality of plating rate profiles along a radius of the substrate being processed.
- the curves 620 - 625 illustrate plating effects ranged from edge thick to edge thin which may be applied to different substrates or during a different time period of the plating process.
- the curves 620 - 625 may be obtained by charging/discharging a capacitive element near the edge of the substrate at different current settings or directions.
- the present invention may be used to achieve good quality metal deposition, for example deposition with a uniform profile.
- the present invention may also be used to achieve specific deposition profiles, such as an intentionally non-uniform profile.
- the present invention may also be used for corrosion protection, for example by applying a protective bias to the substrate through the capacitive element.
Abstract
Description
- 1. Field of the Invention
- Embodiments of the invention generally relate to methods and apparatus for modulating of electric field in an electrochemical process. One embodiment of the invention relates to an electrolytic capacitor disposed in an electrochemical processing cell, wherein the electrolytic capacitor is configured to modulate the electric field without inducing deleterious electrochemical reactions.
- 2. Description of the Related Art
- Metallization of high aspect ratio 90 nm and smaller sized features, such as 45 nm, is a foundational technology for future generations of integrated circuit manufacturing processes. Metallization of these features is generally accomplished via an electrochemical plating process. However, electrochemical plating of these features presents several challenges to conventional gap fill methods and apparatuses. One such problem, for example, is that electrochemical plating processes generally require a conductive seed layer to be deposited onto the features to support the subsequent plating process. Conventionally, these seed layers have had a thickness of between about 1000 Åand about 2500 Å; however, as a result of the high aspect ratios of 90 nm features, seed layer thicknesses must be reduced to less than about 300 Å. This reduction in the seed layer thickness has been shown to cause a “terminal effect,” which is generally understood to be decrease in the deposition rate of an electrochemical plating (ECP) process as a function of the distance from the electrical contacts at the edge of a substrate being plated. The impact of the terminal effect is that the deposition thickness near the edge of the substrate is substantially greater than the deposition thickness near the center of the substrate. The increase in deposition thickness near the edge of the substrate as a result of the terminal effect presents difficulties to subsequent processes, e.g., polishing, bevel cleaning, etc., and as such, minimization of the terminal effect is desired.
- Attempts have been made to use conventional plating apparatus and processes to overcome the terminal effect through various apparatus and methods. Conventional configurations have been modified to include passive shield or flange members, or segmented anodes configured to control the terminal effect. These configurations were generally unsuccessful in controlling the terminal effect, which resulted in poor control over the deposition thickness near the perimeter.
- Active thief electrodes have been used to adjust the current density near the perimeter of a substrate during a plating process to overcome the terminal effect generated by thin seed layers in electrochemical plating processes. An active thief electrode in conventional plating cells is generally configured to pass a current into the solution using an independent power supply. The current passed from the active thief modulates the strength, shape, or direction of the electric field in the solution to achieve desired results. Because a current passes from the thief/auxiliary electrode to the solution, an electrochemical reaction occurs at the interface between the electrode and the solution. This electrochemical reaction may cause several undesired complications. For example, the electrode may need to be cleaned and/or replaced frequently, defects may generate loose metal particles and other products from the electrochemical reaction, and bath additives may be electrochemically broken down.
- Therefore, there exists a need for an apparatus and a method for overcoming he terminal effect without unwanted complications during an electrochemical processing.
- The present invention is directed to an electrochemical plating cell with a capacitive element that satisfies these needs. One embodiment of the invention provides an apparatus for electrochemically processing a substrate with an electrolyte. The apparatus comprises a capacitive element in contact with the electrolyte, wherein the capacitive element is independently biased from the substrate. The apparatus further comprises a substrate support member configured to support the substrate, and a counter electrode in contact with the electrolyte, wherein the counter electrode is coupled to a power supply configured to provide an electric bias between the substrate and the counter electrode.
- Embodiments of the invention further provide an apparatus for electroplating a substrate. The apparatus comprises a fluid basin configured to contain a plating solution therein, an anode in fluid communication with the plating solution, wherein the anode is adapted to a power supply configured to apply a plating bias between the anode and the substrate, and a capacitive element in fluid communication with the plating solution.
- Another embodiment of the invention further provides a method for processing a substrate electrochemically with an electrolyte. The method comprises providing a counter electrode in contact with the electrolyte, providing a capacitive element in contact with the electrolyte, contacting the substrate with the electrolyte, processing the substrate by applying an electric bias between the substrate and the counter electrode, and passing a current to the capacitive element during processing the substrate.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 illustrates a schematic view of one embodiment of an electrochemical processing cell of the present invention. -
FIG. 2A illustrates enlarged view of an interface of an electrolytic capacitor and an electrolyte of the electrochemical processing cell ofFIG. 1 . -
FIG. 2B illustrates enlarged view of an interface of an electrolytic capacitor and an electrolyte of the electrochemical processing cell ofFIG. 1 . -
FIG. 3 illustrate a schematic circuit of one embodiment of an electrochemical processing cell of the present invention. -
FIG. 4 illustrates a sectional view of one embodiment of an electroplating cell of the present invention. -
FIGS. 5A-D illustrates exemplary charging/discharging sequences for an electrolytic capacitor used in an electroplating cell of the present invention. -
FIG. 6 illustrates exemplary profiles of plating rate may be obtained by the electroplating cell of the present invention. - To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures.
- The present invention generally provides an electrochemical plating cell, with an encased counter electrode assembly in fluid communication with the cathode compartment, configured to uniformly plate metal onto a substrate.
-
FIG. 1 illustrates a schematic view of anelectrochemical processing cell 100. An electric field in theelectrochemical processing cell 100 may be adjusted without having to pass a current into the electrolyte. Theelectrochemical processing cell 100 generally comprises afluid volume 102 configured to contain anelectrolyte 110. In one embodiment, thefluid volume 102 is defined by afluid basin 101. In other embodiments, thefluid volume 102 may be defined by a permeable and porous structure, for example, a polishing pad in an electrochemical polishing system. Two electrodes are configured to be in contact with theelectrolyte 110 contained in thefluid volume 102 during process. In one embodiment, acounter electrode 103 is disposed in thefluid basin 101 and asubstrate support member 105 is configured to form a working electrode along with asubstrate 104 supported therein. Thesubstrate support member 105 and thesubstrate 104 are in electrical contact on via one ormore contact pins 106. Thesubstrate support member 105 is configured to transport thesubstrate 104 in and out thefluid volume 102. - A
processing power supply 108 is coupled between thesubstrate support member 105 and thecounter electrode 103. In one embodiment, theelectrochemical processing cell 100 is configured to electroplate a metal layer on thesubstrate 104, thus thesubstrate support member 105 is cathodically biased and thecounter electrode 103 serves as an anode. In another embodiment, theelectrochemical processing cell 100 is configured to electropolishing a metal layer from thesubstrate 104, thus thesubstrate support member 105 is positively biased, and thecounter electrode 103 is negatively biased. It should be noted that electroplating and electropolishing processes can be performed alternatively in theelectrochemical processing cell 100 by simply alternating directions of theprocessing power supply 108. - During processing, an electric field may be generated between the
counter electrode 103 and the assembly of thesubstrate 104 and thesubstrate support member 105. Acapacitive element 107 is disposed in thefluid volume 102 and configured to have an interface in contact with the processing electrolyte during processing. Thecapacitive element 107 may be charged and discharged by acapacitor power supply 109. In one embodiment, the power supplies 108 and 109 may be independent controllable outputs of a multiple power supply. - The
capacitive element 107 is configured to have a large surface area and high electrolytic capacitance. When thecapacitive element 107 is charged, a large amount of charge can be stored within the interface of thecapacitive element 107 and the electrolyte. Therefore, the strength, shape, or direction of the electric field in thefluid volume 102 may be modulated by charging and discharging thecapacitive element 107 disposed therein. -
FIGS. 2A and 2B illustrate enlarged views of an interface of thecapacitive element 107 and theelectrolyte 110 of theelectrochemical processing cell 100 shown inFIG. 1 . Thecapacitive element 107 has asurface 111 which is in contact with theelectrolyte 110. Theelectrolyte 110 containspositive ions 113 andnegative ions 114. - In
FIG. 2A , thecapacitive element 107 is being charged negatively. A current of electrons is flowing into thecapacitive element 107 from thecapacitor power supply 109.Electrons 112 accumulate inside thecapacitive element 107 near thesurface 111. Theelectrons 112 attract thepositive ions 113 in theelectrolyte 110 producing positive-negative poles disturbed relative to each other across thesurface 111 over an extremely short distance. This phenomenon is known as an “electrical double-layer”. While thepositive ions 113 are flowing to thesurface 111, a current is generated in theelectrolyte 110 near thesurface 111. The current can be supplied to thecapacitive element 107 in such a way that voltage difference between thecapacitive element 107 and theelectrolyte 110 do not exceed an overvoltage for the onset of faradic reactions, such as metal depositions and breakdown of electrolytic compound, in theelectrolyte 110. Hence, faradic reactions do not occur near thesurface 111. In one embodiment, the voltage of thecapacitive element 107 may be controlled by flowing a predetermined current for a predetermined period of time using the following relation: -
- wherein i denotes current, C denotes capacitance, V denotes electric potential, and t denotes time. Therefore, the electric field in the
electrolyte 110 can be modified by charging thecapacitive element 107 disposed therein without inducing electrochemical reactions. - Similarly, the electric field of the
electrolyte 110 may be adjusted while the chargedcapacitive element 107 is being discharged. As shown inFIG. 2B , theelectrons 112 are flowing out of thecapacitive element 107 while a current is applied. The “electrical double-layer” neutralizes or switches signs releasing thepositive ions 113 back to theelectrolyte 110, thus, creates another current in theelectrolyte 110. - In one embodiment, the
capacitive element 107 may consist of a highly porous material, such as carbon aerogels, embedded in an inert but conductive matrix such as carbon paper. A carbon aerogel is a monolithic three-dimensional mesoporous network of carbon nanoparticles obtained by pyrolysis of organic aerogels based on resorcinol-formaldedhyde. Carbon aerogels have high surface area (on the order of several m2/g), low density, good electrical conductivity, high electrolytic capacitance (several F/g). It should be noted that other materials can also be used to make a capacitive element for an electrochemical system. In one embodiment, thecapacitive element 107 may be encased in a polymeric sheath. - Through proper optimization of geometry, conductivity and capacitance, a capacitive structure, such as the
capacitive element 107 inFIG. 1 , may be used in an electrochemical processing system to modulate the strength, shape or direction of the processing electric field to achieve desired results, such as improving deposit uniformity, protecting substrates from corrosion, or enabling nucleation for an electrodeposition process. The capacitive element s of the present invention may be used to achieve different purposes by using different designs, applying different charging/discharging sequences, or positioning in different locations. -
FIG. 3 illustrates one embodiment of an electrochemical processing cell of the present invention in form of anelectronic circuit 300. Asubstrate 304 having a layer of conductive material on a surface is generally connected to aprocessing power supply 308. Thepower supply 308 is further connected to acounter electrode 303 disposed in anelectrolyte 310. Theelectrolyte 310 may be considered as a network ofresistors 310R. When thesubstrate 304 is immerged into theelectrolyte 310, thesubstrate 304, theprocessing power supply 308, thecounter electrode 303 and the network ofresisters 310R form a closed circuit, and a processing current ip flows in the closed circuit for processing, i.e., plating and/or deplating, the conductive layers on thesubstrate 304. - A capacitive element disposed in the
electrolyte 310 is equivalent of acapacitor 307 having afirst electrode 307 1 and asecond electrode 307 2. Generally, thefirst electrode 307, is a chargeable area inside the surface of the capacitive element and thesecond electrode 307 2 is a chargeable area outside the capacitor element in theelectrolyte 310. Thecapacitor 307 forms another circuit with the network ofresisters 310R, thecounter electrode 303 and acapacitor power supply 309. When thecapacitor 307 is charged or discharged, a capacitor current ic flows between the networks of theresisters 310R and thecapacitor 307. The capacitor current ic alters the electric fields in theelectrolyte 310, therefore, changing the processing current ip at least in the region near the capacitor element. - As shown in
FIG. 3 , thefirst electrode 307 1, is connected to the negative terminal of thecapacitor power supply 309, thus thefirst electrode 307 1 is configured to be charged negatively. During a charging process, the current ic flows from the network ofresisters 310 to thesecond electrode 307 2. During a discharge processing, the current ic flows from thesecond electrode 307 2 to the network ofresisters 310. It should be noted that thecapacitor power supply 309 may be connected in a reversed manner so that thecapacitor 307 can be charged either positively or negatively. - A capacitor element may be used to achieve different effects to an electrochemical processing cell depending charging and discharging sequences applied to the capacitor. More detailed description may be found in
FIGS. 5A-D . -
FIG. 4 illustrates a sectional view of one embodiment of anelectrochemical processing cell 400. Theelectrochemical processing cell 400 is illustratively described below in reference to modification of a SlimCell™ system, available from Applied Materials, Inc., Santa Clara, Calif. Detailed description of an electroplating cell used in a SlimCell™ may be found in co-pending U.S. patent application Ser. No. 10/268,284, filed on Oct. 9, 2002, entitled “Electrochemcial Processing Cell”, which is herein incorporated by reference. - The
electrochemical processing cell 400 generally includes abasin 401 defining aprocessing volume 402 configured to contain a plating solution. Ananode 403 is generally disposed near the bottom of theprocessing volume 402. In one embodiment, amembrane assembly 406 containing an ionic membrane is generally disposed on top of theanode 403 forming an anodic chamber near theanode 403. Adiffuser plate 405 configured to direct the fluid flow in theprocessing volume 402 may be positioned above themembrane assembly 406. Theelectrochemical processing cell 400 further comprises asubstrate support member 410 configured to transfer asubstrate 404 and contact thesubstrate 404 electrically via one or more contact pins 411 near the edge of thesubstrate 404. Aprocessing power supply 408 is coupled between the contact pins 411 and theanode 403. - During processing, the
substrate support member 410 transders thesubstrate 404 into theprocessing volume 402 so that thesubstrate 404 is in contact with or immerged in a plating solution contained therein. Theprocessing power supply 408 provides thesubstrate 404, via the contact pins 411, a plating bias relative to theanode 403. An electric field is generated between thesubstrate 404 and theanode 403 and one or more conductive materials may be plated on thesubstrate 404. - In one embodiment, a
capacitive element 407 is disposed in theprocessing volume 402. Thecapacitive element 407 is configured to adjust the electric field between thesubstrate 404 and theanode 403. In one embodiment, thecapacitive element 407 is shaped like a ring and positioned in a way that when thesubstrate 404 is in processing position, thecapacitive element 407 is near the edge of thesubstrate 404. In one embodiment, thecapacitive element 407 is connected to acapacitor power supply 409 which is also connected to theanode 403. Thecapacitor power supply 409 is configured to charge and discharge thecapacitive element 407. In another embodiment, thecapacitor power supply 409 is in electrical communication with the contact pins 411 and thecapacitive element 407. In one embodiment, thecapacitive element 407 is configured to adjust the electric field between thesubstrate 404 and theanode 403 during electroplating to improve plating uniformity. - It should be noted that the
capacitor element 407 may have a variety of shapes and locations in an electrochemical processing cell. For example, thecapacitor element 407 may include a plurality of capacitors in strips, or a continuous ring, or other shapes. Thecapacitor element 407 may be disposed on thediffuser plate 405, attached to thesubstrate support member 410 near the contact pins 411, or near the substrate. - An electroplating process performed in an electroplating cell, such as the
electrochemical processing cell 400, may be generally divided into four stages. In stage I, a substrate support member, such as thesubstrate support member 410, is in a non-process position, and a substrate may be loaded into the substrate support member. In stage II, the substrate support member transfer and immerge the substrate into a plating solution in a processing volume, such as theprocessing volume 402 ofFIG. 4 . In stage III, a plating process is performed by applying a plating bias to the substrate an anode by a processing power supply, such as theprocessing power supply 408 ofFIG. 4 . In stage IV, the plating process is completed and the substrate support member transferred the substrate out of the plating solution. - Different effects on plating results may be achieved by charging/discharging a capacitor element at different stages of the plating process.
FIGS. 5A-D illustrates exemplary charging/discharging sequences for a capacitor element used in an electrochemical processing cell of the present invention. -
FIG. 5A illustrates an exemplary charging/discharging sequence for a capacitor element, such as thecapacitor element 407 ofFIG. 4 , during an electroplating process. The horizontal axis indicates time and the vertical axis indicates voltage. The stages I-IV indicate the plating stages described above.Curve 501 represents changes of supply voltage supplied to thecapacitor element 407 by thecapacitor power supply 409 during the plating process. In stage I, from time zero to t1, thecurve 501 increases from V1A to V2A, indicating thecapacitive element 407 is being charged positively. In one embodiment, the charging may be performed by supplying to the capacitive element 407 a predetermined current for a predetermined time period. In stage I, thesubstrate 404 is not in contact with the electrolyte. In stage II, when thesubstrate 404 is being immersed into the electrolyte, thecapacitive element 407 is kept in the positively voltage VA. In stage III, the plating processing starts in theelectrochemical processing cell 400 and thecapacitive element 407 is discharged as a function of time in a controlled manner to adjust the electric field in the vicinity of thecapacitive element 407, i.e. near the edge of the substrate. In one embodiment, the voltage is lowered from V3A to V4A in a linear manner as discharge continues. In one embodiment, the discharge continuous until thecapacitive element 407 reaches a neutral condition or a predetermined voltage. In one aspect, the discharge of thecapacitive element 407 may cover the whole process of plating. In another aspect, the discharge may only occur at the beginning of the plating process when the seed layer is thin and the terminal effect is most obvious. In stage IV, thecapacitive element 407 is kept static, for example in the neutral condition, while the plating process is completing and thesubstrate 404 is removed from the electrolyte. The charge and discharge process may start again for a new substrate to be plated. - In the sequence shown in
FIG. 5A , during electroplating, a positively charged capacitive element is discharged negatively, which generates a current towards the capacitive element in the electrolyte, therefore reducing a plating rate near the capacitive element. -
FIG. 5B illustrates another exemplary charging/discharging sequence for a capacitor element, such as thecapacitor element 407 ofFIG. 4 , during an electroplating process.Curve 502 represents changes of supply voltage supplied to the capacitor element by thecapacitor power supply 409 during the plating process. In stage I, while the substrate is not in the electrolyte, thecurve 502 decreases from V1B to V2B, indicating thecapacitive element 407 is being charged negatively. In stage II, when thesubstrate 404 is being immersed into the electrolyte, thecapacitive element 407 is kept in the negatively charged voltage VB. In stage II, the plating processing starts in theelectrochemical processing cell 400 and thecapacitive element 407 is discharged as a function of time in a controlled manner. In stage IV, thecapacitive element 407 is kept static, for example in the neutral condition, while the plating process is completing and thesubstrate 404 is removed from the electrolyte. The charge and discharge process may start again for a new substrate to be plated. - In the sequence shown in
FIG. 5B , during electroplating, a negatively charged capacitive element is discharged positively, which generates a current outward from the capacitive element in the electrolyte, therefore increasing a plating rate near the capacitive element. - Similarly, in the sequence shown in
FIG. 5C , the capacitive element is discharged in stage I and charged positively in stage III, i.e. the plating stage. Therefore, during electroplating, a capacitive element is positively charged, which generates a current outward from the capacitive element in the electrolyte, therefore increasing a plating rate near the capacitive element. - In the sequence shown in
FIG. 5D , the capacitive element is discharged in stage I and charged negatively in stage III, i.e. the plating stage. Therefore, during electroplating, a capacitive element is negatively charged, which generates a current towards the capacitive element in the electrolyte, therefore decreasing a plating rate near the capacitive element. - As described in
FIGS. 5A-D , a capacitive element in an electroplating cell may be used to adjust the electric field of the electroplating cell, hence adjusting a plating rate near the capacitive element.FIG. 6 illustrates exemplary profiles of plating rates that may be obtained by an electroplating cell having a capacitive element near the edge of the substrate being processed. The horizontal axis indicates the distance from the center of the substrate and the vertical axis indicates a plating rate. Curves 620-625 illustrate a plurality of plating rate profiles along a radius of the substrate being processed. The curves 620-625 illustrate plating effects ranged from edge thick to edge thin which may be applied to different substrates or during a different time period of the plating process. The curves 620-625 may be obtained by charging/discharging a capacitive element near the edge of the substrate at different current settings or directions. - It should be noted that the present invention may be used to achieve good quality metal deposition, for example deposition with a uniform profile. The present invention may also be used to achieve specific deposition profiles, such as an intentionally non-uniform profile. The present invention may also be used for corrosion protection, for example by applying a protective bias to the substrate through the capacitive element.
- While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (27)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/452,839 US7981259B2 (en) | 2006-06-14 | 2006-06-14 | Electrolytic capacitor for electric field modulation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/452,839 US7981259B2 (en) | 2006-06-14 | 2006-06-14 | Electrolytic capacitor for electric field modulation |
Publications (2)
Publication Number | Publication Date |
---|---|
US20070289871A1 true US20070289871A1 (en) | 2007-12-20 |
US7981259B2 US7981259B2 (en) | 2011-07-19 |
Family
ID=38860499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/452,839 Expired - Fee Related US7981259B2 (en) | 2006-06-14 | 2006-06-14 | Electrolytic capacitor for electric field modulation |
Country Status (1)
Country | Link |
---|---|
US (1) | US7981259B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009055929A1 (en) * | 2009-11-27 | 2011-06-22 | VDEh-Betriebsforschungsinstitut GmbH, 40237 | Device for depositing metals in galvanic cell, which has cathode, anode and additional electrode, comprises pulsed current source connecting cathode and electrode, and direct current source connecting anode and cathode and/or the electrode |
US20120043301A1 (en) * | 2010-08-19 | 2012-02-23 | International Business Machines Corporation | Method and apparatus for controlling and monitoring the potential |
US20120043216A1 (en) * | 2010-08-19 | 2012-02-23 | International Business Machines Corporation | Working electrode design for electrochemical processing of electronic components |
WO2013169603A1 (en) * | 2012-05-08 | 2013-11-14 | United Technologies Corporation | Electrical discharge machining electrode |
US9863051B2 (en) * | 2014-06-26 | 2018-01-09 | International Business Machines Corporation | Electrodeposition system and method incorporating an anode having a back side capacitive element |
US11549192B2 (en) * | 2008-11-07 | 2023-01-10 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9096939B2 (en) * | 2007-05-29 | 2015-08-04 | Transphorm, Inc. | Electrolysis transistor |
US20090134041A1 (en) * | 2007-10-15 | 2009-05-28 | Transphorm, Inc. | Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855020A (en) * | 1985-12-06 | 1989-08-08 | Microsurface Technology Corp. | Apparatus and method for the electrolytic plating of layers onto computer memory hard discs |
US6168693B1 (en) * | 1998-01-22 | 2001-01-02 | International Business Machines Corporation | Apparatus for controlling the uniformity of an electroplated workpiece |
US6168694B1 (en) * | 1999-02-04 | 2001-01-02 | Chemat Technology, Inc. | Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications |
US6261433B1 (en) * | 1998-04-21 | 2001-07-17 | Applied Materials, Inc. | Electro-chemical deposition system and method of electroplating on substrates |
US6423206B1 (en) * | 1999-03-02 | 2002-07-23 | Agfa-Gevaert N.V. | Method for electrochemical roughening of a substrate |
US6436249B1 (en) * | 1997-11-13 | 2002-08-20 | Novellus Systems, Inc. | Clamshell apparatus for electrochemically treating semiconductor wafers |
US6627051B2 (en) * | 1997-09-18 | 2003-09-30 | Semitool, Inc. | Cathode current control system for a wafer electroplating apparatus |
US6921468B2 (en) * | 1997-09-30 | 2005-07-26 | Semitool, Inc. | Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations |
US20060243598A1 (en) * | 2005-02-25 | 2006-11-02 | Saravjeet Singh | Auxiliary electrode encased in cation exchange membrane tube for electroplating cell |
US7563354B2 (en) * | 2002-09-25 | 2009-07-21 | Gen3 Partners, Inc. | Method for the manufacture of electrode for energy-storage devices |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003526004A (en) | 1997-09-30 | 2003-09-02 | セミトウール・インコーポレーテツド | Electroplating system with auxiliary electrodes external to the main reaction chamber for contact cleaning operations |
US6228232B1 (en) | 1998-07-09 | 2001-05-08 | Semitool, Inc. | Reactor vessel having improved cup anode and conductor assembly |
US7070686B2 (en) | 2000-03-27 | 2006-07-04 | Novellus Systems, Inc. | Dynamically variable field shaping element |
US6890413B2 (en) | 2002-12-11 | 2005-05-10 | International Business Machines Corporation | Method and apparatus for controlling local current to achieve uniform plating thickness |
-
2006
- 2006-06-14 US US11/452,839 patent/US7981259B2/en not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4855020A (en) * | 1985-12-06 | 1989-08-08 | Microsurface Technology Corp. | Apparatus and method for the electrolytic plating of layers onto computer memory hard discs |
US6627051B2 (en) * | 1997-09-18 | 2003-09-30 | Semitool, Inc. | Cathode current control system for a wafer electroplating apparatus |
US6921468B2 (en) * | 1997-09-30 | 2005-07-26 | Semitool, Inc. | Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations |
US6436249B1 (en) * | 1997-11-13 | 2002-08-20 | Novellus Systems, Inc. | Clamshell apparatus for electrochemically treating semiconductor wafers |
US6168693B1 (en) * | 1998-01-22 | 2001-01-02 | International Business Machines Corporation | Apparatus for controlling the uniformity of an electroplated workpiece |
US6261433B1 (en) * | 1998-04-21 | 2001-07-17 | Applied Materials, Inc. | Electro-chemical deposition system and method of electroplating on substrates |
US6168694B1 (en) * | 1999-02-04 | 2001-01-02 | Chemat Technology, Inc. | Methods for and products of processing nanostructure nitride, carbonitride and oxycarbonitride electrode power materials by utilizing sol gel technology for supercapacitor applications |
US6423206B1 (en) * | 1999-03-02 | 2002-07-23 | Agfa-Gevaert N.V. | Method for electrochemical roughening of a substrate |
US7563354B2 (en) * | 2002-09-25 | 2009-07-21 | Gen3 Partners, Inc. | Method for the manufacture of electrode for energy-storage devices |
US20060243598A1 (en) * | 2005-02-25 | 2006-11-02 | Saravjeet Singh | Auxiliary electrode encased in cation exchange membrane tube for electroplating cell |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11549192B2 (en) * | 2008-11-07 | 2023-01-10 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
DE102009055929B4 (en) * | 2009-11-27 | 2013-11-07 | Vdeh-Betriebsforschungsinstitut Gmbh | Apparatus and method for depositing metals in a galvanic cell |
DE102009055929A1 (en) * | 2009-11-27 | 2011-06-22 | VDEh-Betriebsforschungsinstitut GmbH, 40237 | Device for depositing metals in galvanic cell, which has cathode, anode and additional electrode, comprises pulsed current source connecting cathode and electrode, and direct current source connecting anode and cathode and/or the electrode |
US8926820B2 (en) | 2010-08-19 | 2015-01-06 | International Business Machines Corporation | Working electrode design for electrochemical processing of electronic components |
US8784618B2 (en) * | 2010-08-19 | 2014-07-22 | International Business Machines Corporation | Working electrode design for electrochemical processing of electronic components |
US20120043216A1 (en) * | 2010-08-19 | 2012-02-23 | International Business Machines Corporation | Working electrode design for electrochemical processing of electronic components |
US9062388B2 (en) * | 2010-08-19 | 2015-06-23 | International Business Machines Corporation | Method and apparatus for controlling and monitoring the potential |
US9347147B2 (en) | 2010-08-19 | 2016-05-24 | International Business Machines Corporation | Method and apparatus for controlling and monitoring the potential |
US20120043301A1 (en) * | 2010-08-19 | 2012-02-23 | International Business Machines Corporation | Method and apparatus for controlling and monitoring the potential |
WO2013169603A1 (en) * | 2012-05-08 | 2013-11-14 | United Technologies Corporation | Electrical discharge machining electrode |
US9878387B2 (en) | 2012-05-08 | 2018-01-30 | United Technologies Corporation | Electrical discharge machining electrode |
US11000909B2 (en) | 2012-05-08 | 2021-05-11 | Raytheon Technologies Corporation | Electrical discharge machining electrode |
US9863051B2 (en) * | 2014-06-26 | 2018-01-09 | International Business Machines Corporation | Electrodeposition system and method incorporating an anode having a back side capacitive element |
US10156019B2 (en) | 2014-06-26 | 2018-12-18 | International Business Machines Corporation | Electrodeposition system and method incorporating an anode having a back side capacitive element |
Also Published As
Publication number | Publication date |
---|---|
US7981259B2 (en) | 2011-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7981259B2 (en) | Electrolytic capacitor for electric field modulation | |
CN102459717B (en) | Method and apparatus for electroplating | |
US5620581A (en) | Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring | |
US6179983B1 (en) | Method and apparatus for treating surface including virtual anode | |
US7622024B1 (en) | High resistance ionic current source | |
US6685814B2 (en) | Method for enhancing the uniformity of electrodeposition or electroetching | |
US20100032303A1 (en) | Method and apparatus for electroplating including remotely positioned second cathode | |
US10351968B2 (en) | Front referenced anode | |
US20060243598A1 (en) | Auxiliary electrode encased in cation exchange membrane tube for electroplating cell | |
TWI595123B (en) | Dynamic current distribution control apparatus and method for wafer electroplating | |
JP3255145B2 (en) | Plating equipment | |
US8147660B1 (en) | Semiconductive counter electrode for electrolytic current distribution control | |
US6855239B1 (en) | Plating method and apparatus using contactless electrode | |
KR20160112944A (en) | Electroplating method and electroplating device | |
US20040099532A1 (en) | Apparatus and method for controlling plating uniformity | |
US4302316A (en) | Non-contacting technique for electroplating X-ray lithography | |
US20040077140A1 (en) | Apparatus and method for forming uniformly thick anodized films on large substrates | |
EP4006210A1 (en) | Distribution system for a process fluid and an electric current for a chemical and/or electrolytic surface treatment of a substrate | |
CN103109000A (en) | Process for removing a coating from workpieces | |
US20060283709A1 (en) | Counter-electrode for electrodeposition and electroetching of resistive substrates | |
KR100634446B1 (en) | Wafer plating apparatus for improving process uniformity | |
JP2000054198A (en) | Plating device for producing thin film magnetic head, and thin film magnetic head | |
US20050121329A1 (en) | Thrust pad assembly for ECP system | |
KR20190100014A (en) | Electro-deposition coating method | |
KR20120012248A (en) | Apparatus for plating substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HAFEZI, HOOMAN;ROSENFELD, ARON;REEL/FRAME:017976/0572;SIGNING DATES FROM 20060524 TO 20060525 Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HAFEZI, HOOMAN;ROSENFELD, ARON;SIGNING DATES FROM 20060524 TO 20060525;REEL/FRAME:017976/0572 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
CC | Certificate of correction | ||
FPAY | Fee payment |
Year of fee payment: 4 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20190719 |