US20080006523A1 - Cooled pvd shield - Google Patents
Cooled pvd shield Download PDFInfo
- Publication number
- US20080006523A1 US20080006523A1 US11/764,217 US76421707A US2008006523A1 US 20080006523 A1 US20080006523 A1 US 20080006523A1 US 76421707 A US76421707 A US 76421707A US 2008006523 A1 US2008006523 A1 US 2008006523A1
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- United States
- Prior art keywords
- shield
- manifold
- top shield
- shadow frame
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000001816 cooling Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000151 deposition Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- 238000005240 physical vapour deposition Methods 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 239000012809 cooling fluid Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Definitions
- Embodiments of the present invention generally relate to a cooled shield used in a physical vapor deposition (PVD) system.
- PVD physical vapor deposition
- PVD using a magnetron is one method of depositing material onto a substrate.
- a target may be electrically biased so that ions generated in a process region can bombard the targyet surface with sufficient energy to dislodge atoms from the target.
- the process of biasing a target to cause the generation of a plasma that causes ions to bombard and remove atoms from the target surface is commonly called sputtering.
- the sputtered atoms travel generally toward the substrate being sputter coated, and the sputtered atoms are deposited on the substrate.
- the atoms react with a gas in the plasma, for example, nitrogen, to reactively deposit a compound on the substrate.
- Reactive sputtering is often used to form thin barrier and nucleation layers of titanium nitride or tantalum nitride on the substrate.
- Direct current (DC) sputtering and alternating current (AC) sputtering are forms of sputtering in which the target is biased to attract ions towards the target.
- the target may be biased to a negative bias in the range of about ⁇ 100 to ⁇ 600 V to attract positive ions of the working gas (e.g., argon) toward the target to sputter the atoms.
- the sides of the sputter chamber are covered with a shield to protect the chamber walls from sputter deposition.
- the shield may be electrically grounded and thus provide an anode in opposition to the target cathode to capacitively couple the target power to the plasma generated in the sputter chamber.
- material may sputter and deposit on the exposed surfaces within the chamber.
- material that has been deposited thereon may flake off and contaminate the substrate.
- temperatures fluxuate from a processing temperature to a lower, non-processing temperature material may additionally flake off of a moving component.
- the present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber.
- the top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing.
- the top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
- a physical vapor deposition apparatus comprising a shadow frame movable between a lowered position and a raised position, a top shield which at least partially overlies the shadow frame, and a cooling manifold coupled with the top shield, wherein the cooling manifold controls the temperature of the top shield.
- a physical vapor deposition apparatus comprising a chamber, a susceptor disposed in the chamber and movable between a raised position and a lowered position, a shadow frame positioned to shield a periphery of the susceptor when the susceptor is in the raised position, the shadow frame movable between a raised position and a lowered position, and a top shield positioned to shield at least a portion of the shadow frame, wherein the top shield is cooled.
- a method of processing a substrate comprises positioning a target over a susceptor within a processing chamber, wherein the processing chamber comprises a shadow frame that shields an edge of the susceptor from deposition and a top shield that shields the shadow frame from deposition and sputtering material form the target onto the substrate to deposit a layer on the substrate.
- a physical vapor deposition method comprises positioning a substrate on a susceptor within a chamber, the susceptor movable between a raised position and a lowered position, the chamber comprising shadow frame movable between a raised position and a lowered position and a top shield, wherein the top shield at least partially shields the shadow frame, raising the susceptor and shadow frame to a processing position, and depositing material on the substrate, wherein the top shield reduces the amount of deposition on the shadow frame.
- a shield kit in another embodiment, comprises a manifold shelf, a cooling manifold coupled with the manifold shelf, wherein cooling channels are coupled within the cooling manifold, a top shield coupled with the cooling manifold, wherein the top shield has an interior width that is less than the interior width of the cooling manifold, and an under shield coupled with the cooling manifold, wherein the under shield has an interior width that is greater than the interior width of the top shield, but less than the interior width of the cooling manifold.
- FIG. 1 is a schematic view of an apparatus with the susceptor in a raised position according to one embodiment of the invention.
- FIG. 2 is a schematic view of the apparatus of FIG. 1 with the susceptor in the lowered position.
- FIG. 3 is a close up view of the top shield of FIG. 1 with the susceptor in the raised position.
- FIG. 4 is a cut away view of the bottom section of a PVD chamber according to one embodiment of the invention.
- the present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber.
- the top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing.
- the top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
- the invention is illustratively described and may be used in a physical vapor deposition system for processing large area substrates, such as a PVD system, available from AKT®, a subsidiary of Applied Materials, Inc., Santa Clara, Calif. or a PVD chamber available from Applied Materials Gmbh & Co. KG, located at Alzenau, Germany.
- a PVD system available from AKT®, a subsidiary of Applied Materials, Inc., Santa Clara, Calif. or a PVD chamber available from Applied Materials Gmbh & Co. KG, located at Alzenau, Germany.
- the sputtering target may have utility in other system configurations, including those systems configured to process large area round substrates.
- An exemplary system in which the present invention can be practiced is described in U.S. patent application Ser. No. 11/225,922, filed Sep. 13, 2005 and now published as U.S. Patent Publication No. 2007/0056850, which is hereby incorporated by reference in its entirety.
- FIG. 1 is a schematic view of a PVD apparatus 100 according to one embodiment of the invention.
- the apparatus 100 comprises a target 116 bonded to a backing plate 118 by a bonding material 120 .
- the target 116 lies in opposition to a susceptor 102 within the chamber 134 .
- Cooling channels 142 may be present in the backing plate 118 to provide a uniform temperature across the target 116 .
- a dark space shield 114 surrounds the target 116 .
- a magnetron (not shown) may be present behind the backing plate.
- an anode 126 may be placed between the target 116 and the substrate (not shown).
- the anode 126 is mounted with an anchor mount 130 , which is shielded from deposition by an anode shield 128 .
- the anode 126 provides a charge in opposition to the target 116 so that charged ions will be attracted thereto rather than to the chamber walls 136 which are typically at ground potential.
- a chamber shield 112 may be placed in the chamber 134 to shield the walls 136 from deposition material.
- the chamber shield 112 may be removed for cleaning or replaced as necessary.
- the chamber shield 112 may reduce chamber downtime because removing or replacing the chamber shield 112 may occur faster than cleaning the chamber walls 136 .
- Material may also deposit on areas of the susceptor 102 which are not covered by the substrate.
- a shadow frame 104 may be positioned to cover the exposed areas of the susceptor 102 .
- the shadow frame 104 is not attached to the susceptor 102 .
- the shadow frame 104 will rest on a under shield 124 when the susceptor 102 is in a lowered position (see FIG. 2 ).
- the susceptor 102 When a substrate enters the chamber 134 , the susceptor 102 is in a lowered position. The substrate is inserted into the chamber 134 and placed on lift pins 140 which pass through holes 138 that are within the susceptor 102 . The susceptor 102 raises to meet the substrate, and the lift pins 140 lower. Once the substrate is on the susceptor 102 , the susceptor 102 continues to rise to the processing position. On the way to the processing position, the susceptor 102 encounters the shadow frame 104 , which rests on the under shield 124 . The shadow frame 104 is then raised from its lowered position to the processing position by shadow frame lift pins 110 , which are positioned on the susceptor 102 .
- the shadow frame 104 will reduce the amount of deposition that may occur on the susceptor 102 and permit a non-deposited area on the substrate to form per process requirements.
- the temperature variations that may occur during and after processing may also contribute to the flaking. The temperature variations occur because during processing, the shadow frame 104 will be elevated due to the plasma, but the temperature will be lower when the processing is completed and the plasma is no longer present.
- the heating and cooling may cause the shadow frame 104 to expand and contract. The expanding and contracting, along with the shadow frame 104 movements, may cause the shadow frame 104 to flake.
- a top shield 106 may be used.
- the top shield 106 reduces the amount of deposition that may occur on the shadow frame 104 by at least partially shielding the shadow frame 104 .
- the top shield 106 is stationary within the chamber 134 .
- the temperature of the top shield 106 may be controlled by a cooling manifold 108 .
- the cooling manifold 108 controls the temperature of the top shield 106 to reduce any expansion and contraction that may occur during and after processing. By controlling the temperature of the top shield 106 and hence, the expansion and contraction of the top shield 106 , flaking of the top shield 106 may be reduced. Additionally, cooling the top shield 106 may control the temperature of the shadow frame 104 as well due to the proximity of the shadow frame 104 to the top shield 106 .
- Cooling channels 122 present within the cooling manifold 108 deliver a cooling fluid to the cooling manifold 108 .
- the cooling channels 122 circulate the cooling fluid through the cooling manifold 108 .
- the cooling fluid may be any conventionally known cooling fluid.
- the cooling manifold 108 is supported by a manifold shelf 132 within the chamber 134 .
- the manifold shelf 132 is coupled to the chamber 134 by any conventional attachment means known to one of ordinary skill in the art.
- the cooling manifold 108 is coupled with the manifold shelf 132 , and the under shield 124 , chamber shield 112 , and top shield 106 are all coupled with the cooling manifold 108 .
- the upper shield 124 , chamber shield 112 , and top shield 106 may all be coupled to the cooling manifold 108 by any conventional attachment means known to one of ordinary skill in the art.
- the attachment means comprises a screw.
- the attachment means comprises a nut and bolt arrangement.
- the cooling manifold 108 and at least one of the manifold shelf 132 , under shield 124 , top shield 106 , and chamber shield 112 are a unitary piece performing each of the functions.
- FIG. 4 is a cut away view of the bottom section of an apparatus 400 according to one embodiment of the invention.
- the apparatus 400 has the target and backing plate removed.
- the apparatus comprises chamber walls 408 that surround a processing region.
- Within the apparatus 400 are a susceptor 410 through which lift pins 402 may rise to meet an incoming substrate.
- the inside chamber walls 408 may be lined with a chamber shield 406 .
- a top shield 404 reduces deposition on a shadow frame.
- the shadow frame (not shown) protects the edges of the susceptor 410 from deposition. In the embodiment shown in FIG. 4 , the top shield 404 shields the shadow frame from deposition.
Abstract
The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
Description
- This application claims benefit of U.S. provisional patent application Ser. No. 60/805,858 (APPM/011276L), filed Jun. 26, 2006, which is herein incorporated by reference.
- 1. Field of the Invention
- Embodiments of the present invention generally relate to a cooled shield used in a physical vapor deposition (PVD) system.
- 2. Description of the Related Art
- PVD using a magnetron is one method of depositing material onto a substrate. During a PVD process a target may be electrically biased so that ions generated in a process region can bombard the targyet surface with sufficient energy to dislodge atoms from the target. The process of biasing a target to cause the generation of a plasma that causes ions to bombard and remove atoms from the target surface is commonly called sputtering. The sputtered atoms travel generally toward the substrate being sputter coated, and the sputtered atoms are deposited on the substrate. Alternatively, the atoms react with a gas in the plasma, for example, nitrogen, to reactively deposit a compound on the substrate. Reactive sputtering is often used to form thin barrier and nucleation layers of titanium nitride or tantalum nitride on the substrate.
- Direct current (DC) sputtering and alternating current (AC) sputtering are forms of sputtering in which the target is biased to attract ions towards the target. The target may be biased to a negative bias in the range of about −100 to −600 V to attract positive ions of the working gas (e.g., argon) toward the target to sputter the atoms. Usually, the sides of the sputter chamber are covered with a shield to protect the chamber walls from sputter deposition. The shield may be electrically grounded and thus provide an anode in opposition to the target cathode to capacitively couple the target power to the plasma generated in the sputter chamber.
- During sputtering, material may sputter and deposit on the exposed surfaces within the chamber. As chamber components are moved, material that has been deposited thereon may flake off and contaminate the substrate. As temperatures fluxuate from a processing temperature to a lower, non-processing temperature, material may additionally flake off of a moving component.
- When depositing thin films over substrates such as wafer substrates, glass substrates, flat panel display substrates, solar panel substrates, and other suitable substrates, flaking may contaminate the substrate. Therefore, there is a need in the art to reduce flaking in PVD chambers.
- The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
- In one embodiment, a physical vapor deposition apparatus is disclosed. The apparatus comprises a shadow frame movable between a lowered position and a raised position, a top shield which at least partially overlies the shadow frame, and a cooling manifold coupled with the top shield, wherein the cooling manifold controls the temperature of the top shield.
- In another embodiment, a physical vapor deposition apparatus is disclosed. The apparatus comprises a chamber, a susceptor disposed in the chamber and movable between a raised position and a lowered position, a shadow frame positioned to shield a periphery of the susceptor when the susceptor is in the raised position, the shadow frame movable between a raised position and a lowered position, and a top shield positioned to shield at least a portion of the shadow frame, wherein the top shield is cooled.
- In another embodiment, a method of processing a substrate is disclosed. The method comprises positioning a target over a susceptor within a processing chamber, wherein the processing chamber comprises a shadow frame that shields an edge of the susceptor from deposition and a top shield that shields the shadow frame from deposition and sputtering material form the target onto the substrate to deposit a layer on the substrate.
- In another embodiment, a physical vapor deposition method is disclosed. The method comprises positioning a substrate on a susceptor within a chamber, the susceptor movable between a raised position and a lowered position, the chamber comprising shadow frame movable between a raised position and a lowered position and a top shield, wherein the top shield at least partially shields the shadow frame, raising the susceptor and shadow frame to a processing position, and depositing material on the substrate, wherein the top shield reduces the amount of deposition on the shadow frame.
- In another embodiment, a shield kit is disclosed. The kit comprises a manifold shelf, a cooling manifold coupled with the manifold shelf, wherein cooling channels are coupled within the cooling manifold, a top shield coupled with the cooling manifold, wherein the top shield has an interior width that is less than the interior width of the cooling manifold, and an under shield coupled with the cooling manifold, wherein the under shield has an interior width that is greater than the interior width of the top shield, but less than the interior width of the cooling manifold.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
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FIG. 1 is a schematic view of an apparatus with the susceptor in a raised position according to one embodiment of the invention. -
FIG. 2 is a schematic view of the apparatus ofFIG. 1 with the susceptor in the lowered position. -
FIG. 3 is a close up view of the top shield ofFIG. 1 with the susceptor in the raised position. -
FIG. 4 is a cut away view of the bottom section of a PVD chamber according to one embodiment of the invention. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
- The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
- The invention is illustratively described and may be used in a physical vapor deposition system for processing large area substrates, such as a PVD system, available from AKT®, a subsidiary of Applied Materials, Inc., Santa Clara, Calif. or a PVD chamber available from Applied Materials Gmbh & Co. KG, located at Alzenau, Germany. However, it should be understood that the sputtering target may have utility in other system configurations, including those systems configured to process large area round substrates. An exemplary system in which the present invention can be practiced is described in U.S. patent application Ser. No. 11/225,922, filed Sep. 13, 2005 and now published as U.S. Patent Publication No. 2007/0056850, which is hereby incorporated by reference in its entirety.
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FIG. 1 is a schematic view of aPVD apparatus 100 according to one embodiment of the invention. Theapparatus 100 comprises atarget 116 bonded to abacking plate 118 by a bondingmaterial 120. Thetarget 116 lies in opposition to asusceptor 102 within thechamber 134.Cooling channels 142 may be present in thebacking plate 118 to provide a uniform temperature across thetarget 116. Adark space shield 114 surrounds thetarget 116. A magnetron (not shown) may be present behind the backing plate. - To help provide uniform sputtering deposition across a substrate, an
anode 126 may be placed between thetarget 116 and the substrate (not shown). Theanode 126 is mounted with ananchor mount 130, which is shielded from deposition by ananode shield 128. Theanode 126 provides a charge in opposition to thetarget 116 so that charged ions will be attracted thereto rather than to thechamber walls 136 which are typically at ground potential. By providing the anode between thetarget 116 and the substrate, the plasma will be more uniform, which will aid in the deposition. - During sputtering, material may deposit on exposed areas of the
chamber 134 including thewalls 136. To reduce deposition on thechamber walls 136, achamber shield 112 may be placed in thechamber 134 to shield thewalls 136 from deposition material. Thechamber shield 112 may be removed for cleaning or replaced as necessary. Thechamber shield 112 may reduce chamber downtime because removing or replacing thechamber shield 112 may occur faster than cleaning thechamber walls 136. - Material may also deposit on areas of the
susceptor 102 which are not covered by the substrate. To reduce deposition on thesusceptor 102, ashadow frame 104 may be positioned to cover the exposed areas of thesusceptor 102. Theshadow frame 104 is not attached to thesusceptor 102. Theshadow frame 104 will rest on a undershield 124 when thesusceptor 102 is in a lowered position (seeFIG. 2 ). - When a substrate enters the
chamber 134, thesusceptor 102 is in a lowered position. The substrate is inserted into thechamber 134 and placed onlift pins 140 which pass throughholes 138 that are within thesusceptor 102. Thesusceptor 102 raises to meet the substrate, and the lift pins 140 lower. Once the substrate is on thesusceptor 102, thesusceptor 102 continues to rise to the processing position. On the way to the processing position, thesusceptor 102 encounters theshadow frame 104, which rests on the undershield 124. Theshadow frame 104 is then raised from its lowered position to the processing position by shadow frame lift pins 110, which are positioned on thesusceptor 102. When thesusceptor 102 is in the processing position, so is the shadow frame 104 (seeFIG. 3 ). Theshadow frame 104 will reduce the amount of deposition that may occur on thesusceptor 102 and permit a non-deposited area on the substrate to form per process requirements. - As the
shadow frame 104 is moved between a lowered position and a raised position, material that is deposited on theshadow frame 104 may flake off. The material that flakes off may contaminate a substrate. The temperature variations that may occur during and after processing may also contribute to the flaking. The temperature variations occur because during processing, theshadow frame 104 will be elevated due to the plasma, but the temperature will be lower when the processing is completed and the plasma is no longer present. The heating and cooling may cause theshadow frame 104 to expand and contract. The expanding and contracting, along with theshadow frame 104 movements, may cause theshadow frame 104 to flake. - To reduce flaking from the
shadow frame 104, atop shield 106 may be used. Thetop shield 106 reduces the amount of deposition that may occur on theshadow frame 104 by at least partially shielding theshadow frame 104. Thetop shield 106 is stationary within thechamber 134. The temperature of thetop shield 106 may be controlled by acooling manifold 108. Thecooling manifold 108 controls the temperature of thetop shield 106 to reduce any expansion and contraction that may occur during and after processing. By controlling the temperature of thetop shield 106 and hence, the expansion and contraction of thetop shield 106, flaking of thetop shield 106 may be reduced. Additionally, cooling thetop shield 106 may control the temperature of theshadow frame 104 as well due to the proximity of theshadow frame 104 to thetop shield 106. - Cooling
channels 122 present within thecooling manifold 108 deliver a cooling fluid to thecooling manifold 108. The coolingchannels 122 circulate the cooling fluid through thecooling manifold 108. The cooling fluid may be any conventionally known cooling fluid. - The
cooling manifold 108 is supported by amanifold shelf 132 within thechamber 134. Themanifold shelf 132 is coupled to thechamber 134 by any conventional attachment means known to one of ordinary skill in the art. In one embodiment, thecooling manifold 108 is coupled with themanifold shelf 132, and the undershield 124,chamber shield 112, andtop shield 106 are all coupled with thecooling manifold 108. Theupper shield 124,chamber shield 112, andtop shield 106 may all be coupled to thecooling manifold 108 by any conventional attachment means known to one of ordinary skill in the art. In one embodiment, the attachment means comprises a screw. In another embodiment, the attachment means comprises a nut and bolt arrangement. In yet another embodiment, thecooling manifold 108 and at least one of themanifold shelf 132, undershield 124,top shield 106, andchamber shield 112 are a unitary piece performing each of the functions. -
FIG. 4 is a cut away view of the bottom section of anapparatus 400 according to one embodiment of the invention. Theapparatus 400 has the target and backing plate removed. The apparatus compriseschamber walls 408 that surround a processing region. Within theapparatus 400 are a susceptor 410 through which lift pins 402 may rise to meet an incoming substrate. Theinside chamber walls 408 may be lined with achamber shield 406. Atop shield 404 reduces deposition on a shadow frame. The shadow frame (not shown) protects the edges of the susceptor 410 from deposition. In the embodiment shown inFIG. 4 , thetop shield 404 shields the shadow frame from deposition. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (22)
1. A physical vapor deposition apparatus, comprising:
a shadow frame movable between a lowered position and a raised position;
a top shield which at least partially overlies the shadow frame; and
a cooling manifold coupled with the top shield, wherein the cooling manifold controls the temperature of the top shield.
2. The apparatus of claim 1 , wherein the top shield reduces material deposition on the shadow frame.
3. The apparatus of claim 1 , wherein the shield and the manifold are a unitary piece.
4. The apparatus of claim 1 , wherein the cooling manifold is water cooled.
5. The apparatus of claim 1 , further comprising:
a manifold shelf coupled to the apparatus, wherein the cooling manifold is coupled to the manifold shelf; and
an under shield coupled to the cooling manifold, wherein the shadow frame rests on the under shield when the shadow frame is in the lowered position.
6. The apparatus of claim 5 , further comprising:
cooling channels coupled between the manifold shelf and the cooling manifold.
7. The apparatus of claim 5 , wherein the under shield is coupled between the cooling manifold and the top shield.
8. The apparatus of claim 1 , further comprising:
cooling channels within the cooling manifold.
9. The apparatus of claim 1 , wherein the top shield comprises aluminum or stainless steel.
10. A physical vapor deposition apparatus, comprising:
a chamber;
a susceptor disposed in the chamber and movable between a raised position and a lowered position;
a shadow frame positioned to shield a periphery of the susceptor when the susceptor is in the raised position, the shadow frame movable between a raised position and a lowered position; and
a top shield positioned to shield at least a portion of the shadow frame, wherein the top shield is cooled.
11. The apparatus of claim 10 , further comprising:
a cooling manifold coupled with the top shield, wherein the cooling manifold cools the top shield;
an under shield coupled with the cooling manifold, wherein the shadow frame rests on the under shield when in the lowered position; and
a manifold shelf coupled with the cooling manifold.
12. The apparatus of claim 11 , wherein the cooling manifold and at least one of the top shield, the under shield, and the manifold shelf are a unitary piece.
13. A method of processing a substrate, comprising:
positioning a target over a susceptor within a processing chamber, wherein the processing chamber comprises a shadow frame that shields an edge of the susceptor from deposition and a top shield that shields the shadow frame from deposition; and
sputtering material form the target onto the substrate to deposit a layer on the substrate.
14. The method of claim 13 , wherein a cooling manifold is coupled with the top shield, and further comprising:
flowing a cooling fluid through the cooling manifold to cool the top shield.
15. The method of claim 14 , wherein the cooling fluid is water.
16. The method of claim 13 , further comprising:
positioning a substrate within the chamber, wherein the substrate is positioned on lift pins within the chamber.
17. The method of claim 16 , further comprising:
raising the susceptor to a processing position and lowering the lift pins so that the substrate rests on the susceptor.
18. The method of claim 17 , wherein the chamber further comprises a shadow mask for shielding an edge of the susceptor, the method further comprising:
raising the shadow mask from a lowered position to a raised position, wherein the shadow mask is raised by the susceptor as it is raised.
19. A physical vapor deposition method, comprising:
positioning a substrate on a susceptor within a chamber, the susceptor movable between a raised position and a lowered position, the chamber comprising shadow frame movable between a raised position and a lowered position and a top shield, wherein the top shield at least partially shields the shadow frame;
raising the susceptor and shadow frame to a processing position; and
depositing material on the substrate, wherein the top shield reduces the amount of deposition on the shadow frame.
20. The method of claim 19 , further comprising:
cooling the top shield.
21. A shield kit, comprising:
a manifold shelf;
a cooling manifold coupled with the manifold shelf, wherein cooling channels are coupled within the cooling manifold;
a top shield coupled with the cooling manifold, wherein the top shield has an interior width that is less than the interior width of the cooling manifold; and
an under shield coupled with the cooling manifold, wherein the under shield has an interior width that is greater than the interior width of the top shield, but less than the interior width of the cooling manifold.
22. The shield kit of claim 21 , wherein the cooling manifold and at least one of the manifold shield, top shield, and under shield are a unitary piece.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/764,217 US20080006523A1 (en) | 2006-06-26 | 2007-06-17 | Cooled pvd shield |
JP2007004611U JP3134977U (en) | 2006-06-26 | 2007-06-19 | Cooling PVD shield |
KR2020070010032U KR200443328Y1 (en) | 2006-06-26 | 2007-06-19 | Cooled pvd shield |
TW096210014U TWM343021U (en) | 2006-06-26 | 2007-06-20 | Cooled PVD shield and apparatus and kit comprising the same |
US13/353,136 US9222165B2 (en) | 2006-06-26 | 2012-01-18 | Cooled PVD shield |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US80585806P | 2006-06-26 | 2006-06-26 | |
US11/764,217 US20080006523A1 (en) | 2006-06-26 | 2007-06-17 | Cooled pvd shield |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/353,136 Continuation US9222165B2 (en) | 2006-06-26 | 2012-01-18 | Cooled PVD shield |
Publications (1)
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US20080006523A1 true US20080006523A1 (en) | 2008-01-10 |
Family
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US11/764,217 Abandoned US20080006523A1 (en) | 2006-06-26 | 2007-06-17 | Cooled pvd shield |
US13/353,136 Expired - Fee Related US9222165B2 (en) | 2006-06-26 | 2012-01-18 | Cooled PVD shield |
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US13/353,136 Expired - Fee Related US9222165B2 (en) | 2006-06-26 | 2012-01-18 | Cooled PVD shield |
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US (2) | US20080006523A1 (en) |
JP (1) | JP3134977U (en) |
KR (1) | KR200443328Y1 (en) |
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JP5880485B2 (en) * | 2013-05-13 | 2016-03-09 | 住友金属鉱山株式会社 | Film forming apparatus and metallized resin film manufacturing method using the same |
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Also Published As
Publication number | Publication date |
---|---|
KR200443328Y1 (en) | 2009-02-05 |
TWM343021U (en) | 2008-10-21 |
KR20080000002U (en) | 2008-01-02 |
JP3134977U (en) | 2007-08-30 |
US20120111273A1 (en) | 2012-05-10 |
US9222165B2 (en) | 2015-12-29 |
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