US20080108198A1 - Transistor structures and methods for making the same - Google Patents

Transistor structures and methods for making the same Download PDF

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US20080108198A1
US20080108198A1 US12/006,738 US673808A US2008108198A1 US 20080108198 A1 US20080108198 A1 US 20080108198A1 US 673808 A US673808 A US 673808A US 2008108198 A1 US2008108198 A1 US 2008108198A1
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transistor
drain
source
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John Wager
Randy Hoffman
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Oregon State Board of Higher Education
Oregon State University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon
    • H01L29/458Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66969Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Definitions

  • the present disclosure relates to transistor structures such as, for example, transparent transistors.
  • microelectronics industry and research community is undertaking efforts to fabricate electronic devices (e.g., diodes and transistors) that are transparent to the portion of the electromagnetic spectrum that is visible to the human eye. Circuits made of such devices would offer unique opportunities for innovation or improvement of consumer-, automotive-, and military-electronics systems.
  • electronic devices e.g., diodes and transistors
  • AMLCD active-matrix liquid crystal displays
  • pixel picture or display element
  • TFT thin-film transistor
  • AMLCD displays employ transistor materials that may be deposited onto glass substrates but are not transparent (usually amorphous, polycrystalline, or continuous-grain silicon are the materials used to fabricate TFTs on glass).
  • the portion of the display glass occupied by the addressing electronics is not available for transmission of light through the display. Therefore, the availability of transparent transistors for AMLCD addressing would improve display performance by allowing more light to be transmitted through the display.
  • FIG. 1 is a sectional view of a first embodiment of a presently disclosed transistor structure
  • FIG. 2 is a sectional view of a second embodiment of a presently disclosed transistor structure
  • FIG. 3 is a sectional view of a third embodiment of a presently disclosed transistor structure
  • FIG. 4 is a graph showing drain-source current (I DS ) versus drain-source voltage (V DS ), as a function of gate-source voltage (V GS ), for the transistor structure depicted in FIG. 1 (the gate-source voltage varies from +40V (top curve) to +2 V in 2 V steps);
  • FIG. 5 is a graph showing the I DS vs. V GS characteristics for the transistor structure depicted in FIG. 1 at three different drain-source voltages;
  • FIG. 7 is a graph showing the optical transmission characteristics through the source or drain portion of the transistor structure depicted in FIG. 1 ;
  • FIG. 8 is a sectional view of a fourth embodiment of a presently disclosed transistor structure
  • FIG. 9 is a sectional view of a fifth embodiment of a presently disclosed transistor structure.
  • FIG. 10 is a sectional view of a sixth embodiment of a presently disclosed transistor structure.
  • FIG. 11 is a schematic representation of an example of a cell circuit for an AMLCD that includes the presently disclosed transistor structure
  • FIG. 12 is a schematic representation of an example of a dynamic random-access memory (DRAM) cell circuit that includes the presently disclosed transistor structure;
  • DRAM dynamic random-access memory
  • FIG. 13 is a schematic representation of an example of a logic inverter that includes the presently disclosed transistor structure.
  • FIG. 14 is a schematic representation of an example of an inverting amplifier circuit that includes the presently disclosed transistor structure.
  • Enhancement-mode transistor means a transistor in which there is negligible off-current flow, relative to on-current flow, between a source and a drain at zero gate voltage. In other words, the transistor device is “normally off.” In contrast, a depletion-mode transistor is “normally on” meaning that more than a substantially negligible current flows between a source and a drain at zero gate voltage.
  • Gate generally refers to the insulated gate terminal of a three terminal FET when used in the context of a transistor circuit configuration.
  • substantially insulating can include insulating materials (e.g., materials having a resistivity of greater than about 10 10 ⁇ -cm) and semi-insulating materials (e.g., materials having a resistivity of about 10 3 ⁇ -cm to about 10 10 ⁇ -cm).
  • substantially transparent generally denotes a material or construct that does not absorb a substantial amount of light in the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum.
  • “Vertical” means substantially perpendicular to the surface of a substrate.
  • enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent.
  • Devices that include the transistors and methods for making the transistors are also disclosed.
  • One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO 2 , or In 2 O 3 .
  • a gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface.
  • the transistor also includes a source that can inject electrons into the channel layer for accumulation at the channel layer/gate insulator layer interface and a drain that can extract electrons from the channel layer.
  • a second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, substantially insulating SnO 2 , or substantially insulating In 2 O 3 , the substantially insulating ZnO, substantially insulating SnO 2 , or substantially insulating In 2 O 3 being produced by annealing.
  • a gate insulator layer is located adjacent to the channel layer and comprises a substantially transparent material.
  • the transistor also includes a source, a drain, and a gate electrode.
  • a method for making the transistors includes providing a gate insulating layer, depositing ZnO, SnO 2 or In 2 O 3 onto at least a portion of a surface of the gate insulating layer, and annealing the ZnO, SnO 2 or In 2 O 3 for about 1 minute to about 2 hours at a temperature of about 300 to about 1000° C. in an oxidative atmosphere.
  • the transistors may be included in optoelectronic display devices as switches coupled to at least one display element.
  • Another disclosed device is a substantially transparent, dynamic random-access memory cell, comprising a substantially transparent capacitor coupled to the transistor.
  • a further application of the transistors is in substantially transparent inverters wherein the transistor is coupled to a load device.
  • the transistor structure includes a substrate, a gate electrode, a gate insulator layer, a channel layer, a source and a drain.
  • the channel layer may be positioned adjacent to the gate insulator layer so that a surface of the channel layer is contiguous with a surface of the gate insulator layer.
  • the contact region of the channel layer surface and the gate insulator layer surface is referred to herein as the channel layer/gate insulator layer interface.
  • the channel layer insulating material is different than the gate insulator layer material and the channel layer/gate insulator layer interface defines a discrete material boundary.
  • the channel layer/gate insulator layer interface may define a conducting channel for the flow of electrons from the source to the drain.
  • the transistor may be classified as a “surface-channel” or “interface-channel” device.
  • the applied gate voltage facilitates electron accumulation in the channel layer/gate insulator layer interface region.
  • the applied voltage enhances electron injection from the source to the channel layer/gate insulator layer interface and electron extraction therefrom by the drain.
  • the transistor structure may exhibit an optical transmission of at least about 90%, more particularly at least about 95%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum.
  • Each of the additional components of the structure i.e., substrate, gate electrode, source/drain terminals
  • the transistor structure as a whole (and/or individual components of the transistor) may exhibit an optical transmission of at least about 50%, more particularly at least about 70%, and most particularly at least about 90%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum.
  • a further feature of the FET disclosed herein is that it may easily be fabricated as a thin film transistor (TFT).
  • TFT thin film transistor
  • relatively low processing temperatures e.g., not exceeding about 800° C.
  • ion implanting to set the channel threshold voltage and define the source and drain contacts in certain variants of the FET structure.
  • Such TFTs typically are very useful in association with optoelectronic device as explained below in more detail.
  • the channel layer typically is made from a substantially insulating material that is also substantially transparent. A negligible amount of electrons is inherently available in the bulk portion of the channel layer since the channel layer is made from a substantially insulating material.
  • the substantially insulating channel layer may provide inherent electrical isolation for multiple devices sharing a continuous channel layer film (with patterned gate, source, and drain electrodes defining each device). Such inherent device isolation means that patterning of the channel layer film is not necessary since conductivity at the channel layer/gate insulator layer is exhibited only beneath the patterned gate electrodes.
  • Illustrative materials for the channel layer include ZnO, SnO 2 and In 2 O 3 .
  • Insulating ZnO, SnO 2 , and In 2 O 3 may be made by an annealing process, particularly rapid thermal annealing (RTA).
  • RTA rapid thermal annealing
  • Such insulating ZnO, SnO 2 and In 2 O 3 typically exhibit a bandgap of less than about 5 eV.
  • a layer of ZnO may be deposited (e.g., by sputtering, chemical vapor deposition, spin coating, physical vapor deposition, vapor phase epitaxy, molecular beam epitaxy, etc.) and subsequently undergo annealing for about 1 minute to about 2 hours, more particularly about 1 minute to about 1 hour, and about 1 minute to about 5 minutes in certain instances, at a temperature of about 300 to about 1000° C., particularly about 700 to about 800° C., in a substantially oxidative atmosphere.
  • a temperature of about 300 to about 1000° C. particularly about 700 to about 800° C.
  • Oxygen vacancies or oxygen deficiency in ZnO can render it n-type and conductive.
  • High temperature (i.e., at least about 700° C.) annealing in inert atmospheres such as argon may also produce insulating ZnO. Although not bound by any theory, such higher temperature anneals may improve the ZnO crystallinity, thus improving the electron transport properties.
  • Such insulating ZnO may or may not be doped. If doped, the resistivity of the ZnO may also be enhanced by substitutional doping with an acceptor dopant such as, for example, N, Cu, Li, Na, K, Rb, P, As, and mixtures thereof.
  • a layer of SnO 2 may be deposited (e.g., by sputtering, chemical vapor deposition, spin coating, physical vapor deposition, vapor phase epitaxy, molecular beam epitaxy, etc.) and subsequently undergo annealing for about 1 minute to about 2 hours, more particularly about 1 minute to about 1 hour, and about 1 minute to about 5 minutes in certain instances, at a temperature of about 300 to about 1000° C., particularly about 700 to about 900° C., in a substantially oxidative atmosphere.
  • a temperature of about 300 to about 1000° C. particularly about 700 to about 900° C.
  • Oxygen vacancies or oxygen deficiency in SnO 2 can render it n-type and conductive.
  • High temperature (i.e., greater than about 700° C.) annealing in inert atmospheres such as argon may also produce insulating SnO 2 .
  • higher temperature anneals may improve the SnO 2 crystallinity, thus improving the electron transport properties.
  • the resistivity of the SnO 2 may also be enhanced by substitutional doping with an acceptor dopant such as, for example, Al, In, Ga, Bi, B, La, Sc, Y, Lu, Er, Ho, N, P, As, and mixtures thereof.
  • a layer of In 2 O 3 may be deposited (e.g., by sputtering, chemical vapor deposition, spin coating, physical vapor deposition, vapor phase epitaxy, molecular beam epitaxy, etc.) and subsequently undergo annealing for about 1 minute to about 2 hours, more particularly about 1 minute to about 1 hour, and about 1 minute to about 5 minutes in certain instances, at a temperature of about 300 to about 1000° C., particularly about 700 to about 900° C., in a substantially oxidative atmosphere.
  • a temperature of about 300 to about 1000° C. particularly about 700 to about 900° C.
  • Oxygen vacancies or oxygen deficiency in In 2 O 3 can render it n-type and conductive.
  • High temperature (i.e., greater than about 700° C.) annealing in inert atmospheres such as argon may also produce insulating In 2 O 3 .
  • higher temperature anneals may improve the In 2 O 3 crystallinity, thus improving the electron transport properties.
  • the resistivity of the In 2 O 3 may also be enhanced by substitutional doping with an acceptor dopant such as, for example, Be, Mg, Ca, Sr, Ba, N, P, As, Zn, Cd, and mixtures thereof.
  • the ZnO, SnO 2 , or In 2 O 3 layer may be sputter deposited in an atmosphere that includes at least one sputter gas, and at least one film-modifying gas.
  • the film-modifying gas may be any gas that can enhance the resistivity of the film via incorporation into the film on an atomic or sub-atomic level.
  • a film-modifying gas may be an oxidative gas whose molecules, atoms or ions are incorporated into the film so that they occupy oxygen vacancies or deficiencies in the film as described above.
  • Another film-modifying gas may be a dopant gas whose molecules, atoms or ions are incorporated into the film so that they increase the resistivity of the film.
  • Illustrative sputter gases include Ar, Ne, and mixtures thereof.
  • Illustrative oxidative gases include O 2 , N 2 O and mixtures thereof.
  • Illustrative dopant gases include N 2 , NH 3 and other gases containing the dopant species listed above.
  • the concentrations of the gases in the sputter atmosphere may be varied depending upon the desired characteristics of the film. For example, the concentration of oxidative gas may range from about 0 to about 50 volume percent. The concentration of dopant gas may range from about 0 to about 50 volume percent. The concentration of sputter gas may range from about 0 to about 100 volume percent.
  • the sputtering conditions may also be varied depending upon the desired characteristics of the film.
  • the temperature may range from about room temperature to 600° C.
  • the pressure may range from about 1 mTorr to about 50 mTorr.
  • an undoped ZnO target may be sputter deposited in an atmosphere that includes 80 volume percent Ar, 10 volume percent N 2 , and 10 volume percent O 2 .
  • the thickness of the channel layer may vary, and according to particular examples it can range from about 10 to about 500 nm.
  • the channel length also may vary, and according to particular examples it can range from about 1,000 to about 100,000 nm.
  • the gate insulator layer may be made from any material exhibiting insulating properties required for gate insulators, particularly a substantially transparent material.
  • Gate insulator materials typically exhibit a bandgap of greater than about 5 eV.
  • Illustrative materials include substantially transparent materials such as aluminum-titanium oxide (Al 2 O 3 /TiO 2 ), Al 2 O 3 , MgO, SiO 2 , silicon nitride, and silicon oxynitride.
  • a substantially transparent material is aluminum-titanium oxide grown by atomic layer deposition.
  • the thickness of the gate insulator layer may vary, and according to particular examples it can range from about 10 to about 300 nm.
  • the gate insulator layer may be introduced into the structure by techniques such as chemical vapor deposition, sputtering, atomic layer deposition, or evaporation.
  • Source/drain terminals refer to the terminals of a FET, between which conduction occurs under the influence of an electric field. Designers often designate a particular source/drain terminal to be a “source” or a “drain” on the basis of the voltage to be applied to that terminal when the FET is operated in a circuit.
  • the source and drain may be made from any suitable conductive material such as an n-type material.
  • the source and drain materials are optionally opaque materials or substantially transparent materials.
  • Illustrative materials include transparent, n-type conductors such as indium-tin oxide (ITO), ZnO, SnO 2 , or In 2 O 3 or opaque metals such as Al, Cu, Au, Pt, W, Ni, or Ti.
  • Especially useful materials for the source and drain are those that can inject (and extract) electrons into the channel layer insulating material. Examples of such electron injection materials include indium-tin oxide, LaB 6 , and ZnO:Al.
  • the source and drain may be introduced into the structure by techniques such as chemical vapor deposition, sputtering, evaporation, and/or doping of the channel layer material via diffusion or ion implantation.
  • the source and drain terminals may be fabricated such that they are geometrically symmetrical or non-symmetrical.
  • the gate electrode may be made from any suitable conductive material.
  • the gate electrode material is optionally an opaque material or a substantially transparent material.
  • Illustrative gate electrode materials include transparent, n-type conductors such as indium-tin oxide (ITO), ZnO, SnO 2 , or In 2 O 3 , or opaque metals such as Al, Cu, Au, Pt, W, Ni, or Ti.
  • the thickness of the gate electrode may vary, and according to particular examples it can range from about 50 to about 1000 nm.
  • the gate electrode may be introduced into the structure by chemical vapor deposition, sputtering, evaporation and/or doping.
  • “Substrate”, as used herein, refers to the physical object that is the basic workpiece that is transformed by various process operations into the desired microelectronic configuration.
  • a substrate may also be referred to as a wafer.
  • Wafers may be made of semiconducting, non-semiconducting, or combinations of semiconducting and non-semiconducting materials.
  • the substrate may be made from any suitable material.
  • the substrate material is optionally an opaque material or a substantially transparent material.
  • Illustrative substrate materials include glass and silicon.
  • the thickness of the substrate may vary, and according to particular examples it can range from about 100 ⁇ m to about 1 cm.
  • Metal lines, traces, wires, interconnects, conductors, signal paths and signaling mediums may be used for providing the desired electrical connections.
  • the related terms listed above, are generally interchangeable, and appear in order from specific to general.
  • Metal lines generally aluminum (Al), copper (Cu) or an alloy of Al and Cu, are conductors that provide signal paths for coupling or interconnecting, electrical circuitry. Conductors other than metal may also be utilized.
  • An illustrative n-channel operation of the transistor involves applying a positive voltage to the gate electrode, grounding the source, and applying a positive voltage to the drain. For example, a voltage of about 5 to about 40 V may be applied to the gate electrode and the drain during operation.
  • the threshold voltage may range from about 1 to about 20 V. Electrons flow from the source, along the conducting channel created at the channel layer/gate insulator layer interface, and out of the transistor through the drain.
  • the effective mobility of the electrons at the interface may vary depending upon the specific structure, but could range, for example, from about 0.05 to about 20 cm 2 V ⁇ 1 s ⁇ 1 . Simply removing the positive voltage applied to the gate electrode turns the transistor off since the transistor is an enhancement-mode transistor.
  • the transistor structures disclosed herein may be used for fabricating chips, integrated circuits, monolithic devices, semiconductor devices, and microelectronic devices.
  • a microelectronic device is an optoelectronic device.
  • An illustrative optoelectronic device is an active-matrix liquid-crystal display (AMLCD).
  • One exemplar device is an optoelectronic display device that includes elements having electrodes and an electro-optical material disposed between the electrodes.
  • a connection electrode of the transparent transistor may be connected to an electrode of the display element, while the switching element and the display element overlap one another at least partly.
  • An optoelectronic display element is here understood to be a display element whose optical properties change under the influence of an electrical quantity such as current or voltage such as, for example, an element usually referred to as liquid crystal display (LCD).
  • LCD liquid crystal display
  • the presently detailed transparent transistor is sufficiently fast for switching the display element at such a high frequency that the use of the transparent transistor as a switching element in a liquid crystal display is possible.
  • the display element acts in electrical terms as a capacitor that is charged or discharged by the accompanying transparent transistor.
  • the optoelectronic display device may include many display elements each with its own transparent transistor, for example, arranged in a matrix.
  • the transparent transistors may be arrayed for LCD devices as described, for example, in Kim, “Thin-Film-Transistor Device Design”, Information Display 2/02, p. 26 (2002).
  • the AMLCD cell circuit includes a transistor 60 as presently described, and a LCD pixel 61 electrically coupled thereto.
  • the transistor 60 and the LCD pixel 61 together form a transistor/pixel cell 62 .
  • the transistor 60 is electrically coupled to the LCD pixel 61 via the drain electrode.
  • the gate electrode of the transistor 60 is electrically coupled to a row or control line 63 that receives on/off input for the transistor 60 .
  • the source electrode of the transistor 60 is electrically coupled to a column or data line 64 that receives a signal for controlling the LCD pixel 61 .
  • microelectronic devices that could employ the transistor structure shown herein include inverters, analog amplifiers and single-transistor dynamic random-access memory (DRAM) cells, and like devices.
  • DRAM single-transistor dynamic random-access memory
  • a transparent enhancement-mode transistor whose source is connected to one terminal of a transparent capacitor, while the other terminal of the capacitor is grounded, constitutes a transparent single-transistor dynamic random-access memory (DRAM) cell.
  • DRAM transparent single-transistor dynamic random-access memory
  • the enhancement-mode transistor serving as an access transistor that controls the capacitor charge state.
  • a logic 0 is represented by negligible capacitor charge and a concomitantly small capacitor voltage.
  • a logic 1 is obtained by charging the capacitor, thus increasing the capacitor voltage until it approaches the power supply voltage.
  • a transparent capacitor may be constructed by sandwiching a transparent insulator layer, using materials such as Al 2 O 3 or SiO 2 , between two transparent conductors, using materials such as indium-tin oxide, ZnO, or SnO 2 .
  • the DRAM cell circuit includes a transistor 70 as presently described, and a storage capacitor 71 electrically coupled thereto.
  • the transistor 70 and the storage capacitor 71 together form a transistor/capacitor cell 72 .
  • the transistor 70 is electrically coupled to the storage capacitor 71 via the drain electrode.
  • the gate electrode of the transistor 70 is electrically coupled to a row or write line 73 that receives on/off input for the transistor 70 .
  • the source electrode of the transistor 70 is electrically coupled to a column or data line 74 that receives a signal for controlling what is stored on the storage capacitor 71 .
  • FIGS. 1-3 and FIGS. 8-10 Illustrative examples of specific transistor structures are shown in FIGS. 1-3 and FIGS. 8-10 .
  • the specific examples described below are for illustrative purposes and should not be considered as limiting the scope of the appended claims.
  • like reference numerals refer to like elements unless otherwise indicated.
  • FIG. 1 A first figure.
  • a TFT structure 1 is illustrated that was fabricated on a one-inch by one-inch thick composite substrate.
  • the platform includes a glass substrate 2 , a 200 nm thick, indium-tin oxide (ITO) gate electrode 3 coated on the substrate 2 , and a 200 nm thick, aluminum-titanium oxide gate insulator layer 4 .
  • ITO indium-tin oxide
  • a ZnO channel and an ITO source/drain electrode film was deposited via ion beam sputtering in 10 ⁇ 4 Torr of Ar/O 2 (80%/20%); the substrate was unheated during deposition.
  • the ZnO channel layer 5 (100 nm thick), an ITO source electrode 6 (300 nm thick) and, an ITO drain electrode 7 (300 nm thick) were defined using a shadow mask.
  • the resulting structure defines a channel layer/gate insulator layer interface 8 .
  • a 300° C. rapid thermal anneal (RTA) in Ar immediately prior to both the ZnO and ITO depositions served to remove adsorbed contaminants from the exposed surface, yielding a noticeable improvement in film quality (particularly for ITO films).
  • a RTA typically in O 2 or Ar, at 600 to 800° C.
  • a 300° C. RTA in O 2 was used to improve the transparency of the ITO layer.
  • the source/drain electrodes 6 and 7 are disposed on the top surface of the channel layer 5 (from a vertical perspective) and the gate electrode 3 and channel layer 5 are disposed, respectively, on opposing surfaces of the gate insulator layer 4 .
  • structure 1 allows for high temperature processing of the ZnO channel layer 5 prior to deposition and processing of the ITO source/drain electrodes 6 and 7 .
  • Certain electrical and physical characteristics of the TFT structure 1 were evaluated as described below and illustrated in FIGS. 4-7 .
  • n-channel, enhancement-mode behavior is obtained as demonstrated by the fact that a positive gate voltage in excess of ⁇ 15 V (the threshold) is required to obtain appreciable drain-source current.
  • I DS -V DS curves exhibit prototypical FET characteristics; of particular significance is the flatness of these curves at large drain voltages (i.e. they exhibit ‘hard’ saturation).
  • the drain and gate voltages employed are rather large compared to conventional FETs; gate and drain voltages can be reduced to the range expected for typical FET operation (i.e. ⁇ 5-10 V), by simply reducing the gate insulator thickness.
  • the insulator thickness is ⁇ 200 nm, as optimized for electroluminescent display applications; if an otherwise identical insulator is rescaled to a thickness of 20 nm, the gate and drain voltages will be reduced by a factor of approximately 10.
  • the I DS of structure 1 is currently rather small (i.e., I DS (max) is about 6 ⁇ A in FIG. 4 ). A larger I DS may be desirable for most applications.
  • the magnitude of I DS is determined by two factors. One is the effective mobility of the channel electrons, ⁇ eff (about 0.05-0.2 cm 2 V ⁇ 1 s ⁇ 1 for the TFT structure 1 ). Process/device optimization should result in an improvement in ⁇ eff by a factor of about 2 to 100 which will lead to a corresponding increase in I DS .
  • the second factor is the aspect ratio.
  • FIG. 5 illustrates the I DS -V GS characteristics of the TFT structure 1 at three different drain voltages. This figure shows that there is a factor of 10 5 -10 6 difference between the ‘on’ and ‘off’ currents when the transistor is used as a switch.
  • FIG. 6 shows the transfer characteristics of the TFT structure 1 when it is employed as an inverter.
  • V DD power supply voltage
  • a logic swing of about 15 V between 15 and 30 V is clearly evident from this curve.
  • a logic inverter is comprised of two constituents: a transistor coupled to a load device.
  • the load device may be a resistor, as employed in this example.
  • a depletion- or enhancement-mode transistor may also be used as load devices, typically offering superior performance.
  • the fundamental property of a logic inverter is that it performs a logical not operation, in which a logic 0 (1) input produces a logic 1 (0) output.
  • Successful achievement of a transparent logic inverter, as described herein, is significant since the inverter is the most basic building block for achieving transparent digital electronics. Optimization of the transparent thin film transistor via reducing the insulator thickness, reducing physical dimensions, and increasing the current drive capability (increased aspect ratio and effective mobility) will lead to a significant reduction in the required power supply voltage for inverter operation.
  • the logic inverter circuit includes a transistor 80 as presently described.
  • the gate electrode of the transistor 80 is electrically coupled to a voltage input (V in )
  • the source electrode of the transistor 80 is electrically coupled to ground
  • the drain electrode of the transistor 80 is electrically coupled to a load 81 and a power source (V DD ).
  • the load 81 may be a transparent thin-film resistor or a transparent thin-film transistor.
  • the voltage (V out ) out of the circuit is controlled by whether V in turns the transistor 80 on or off.
  • Transparent transistors may also be employed in amplifier applications.
  • the inverter structures described above can also function as simple analog inverting amplifiers. With the appropriate DC bias at the input, a small input signal (superimposed upon the DC bias) is amplified by the inverter transfer characteristic.
  • these transistors could be directly applied in arbitrary amplifier configurations, with the limitation that the maximum operating frequency will be relatively low due to the low mobility of these devices.
  • the inverting amplifier circuit includes a transistor 90 as presently described.
  • the gate electrode of the transistor 90 is electrically coupled to a voltage input signal (V in ) and a DC bias (V bias ).
  • the source electrode of the transistor 90 is electrically coupled to ground, and the drain electrode of the transistor 90 is electrically coupled to a load 91 and a power source (V DD ).
  • the load 91 may be a transparent thin-film resistor or a transparent thin-film transistor.
  • FIG. 7 shows the optical transmission of the TFT structure 1 through the source 6 or drain 7 (optical transmission through the channel, not shown here, is higher than through the source or drain).
  • the average transmission in the visible portion of the electromagnetic spectrum (450-700 nm) is about 90% (about 95% through the channel).
  • the transparent TFT structure is essentially invisible; a slight tinting of the glass substrate is apparent upon close inspection.
  • a source electrode 11 (100 nm thick) and a drain electrode 12 (100 nm thick) were made by selectively doping the ends of a ZnO channel layer 13 (100 nm thick) with In (or any other suitable n-type dopant). This was accomplished by ion beam sputter depositing a thin (about 5 nm) ITO layer using the source/drain shadow mask before depositing the ZnO channel film. A subsequent high-temperature ( ⁇ 600-800° C.) annealing step was performed to diffusion-dope the ZnO, thus forming n-type doped source/drain regions 11 and 12 .
  • the diffusion-doping RTA may also function as the oxidizing RTA for the ZnO.
  • ITO contacts may be placed over the source and drain regions to provide better electrical contact.
  • the substrate 2 , gate electrode 3 , gate insulator layer 4 , and channel layer/gate insulator layer interface 8 are the same as in FIG. 1 .
  • an ITO source electrode 21 (300 nm thick) and ITO drain electrode 22 (300 nm thick) are deposited prior to formation of a ZnO channel layer 23 (100 nm thick).
  • the ZnO channel layer 23 is subsequently deposited conformally over the ITO source/drain electrodes 21 and 22 .
  • a 700° C. Ar anneal was performed, followed by a 300° C. oxygen anneal.
  • the substrate 2 , gate electrode 3 , gate insulator layer 4 , and channel layer/gate insulator layer interface 8 are the same as in FIG. 1 .
  • FIG. 8 A fourth variation of a TFT structure 30 is shown in FIG. 8 .
  • the TFT structure 30 includes a glass substrate 2 upon which is disposed a source electrode 35 and a drain electrode 36 .
  • a channel structure 37 is provided that includes a bulk section 38 positioned between the source electrode 35 and the drain electrode 36 and adjacent to the glass substrate 2 .
  • the channel structure 37 also includes an interface section 39 that is integral with the bulk section 38 , and interposed between a gate insulator layer 34 and the source electrode 35 and the drain electrode 36 , respectively.
  • the interface section 39 may overlap all or only a portion of each of the source electrode 35 and the drain electrode 36 .
  • the interface section 39 and the gate insulator layer 34 form a channel layer/gate interface layer 31 that defines a conducting channel for the flow of electrons from the source to the drain.
  • a gate electrode 33 is disposed on the top surface (from a vertical perspective) of the gate insulator layer 34 . In other words, the gate electrode 33 and the channel structure 37 are provided on opposing surfaces of the gate insulator layer 34 .
  • the TFT structure 30 may be fabricated, for example, by depositing and patterning a film that defines the source electrode 35 and the drain electrode 36 .
  • a 500 ⁇ ITO source/drain electrode film may be sputtered onto the glass substrate 2 .
  • the source and drain patterning may be accomplished via shadow masking or photolithography.
  • the source/drain electrode film could optionally be annealed.
  • the channel structure 37 may then be deposited and patterned over the source electrode 35 , the drain electrode 36 , and the substrate 2 .
  • a 500 ⁇ ZnO film may be sputter deposited, and then patterned via shadow masking or photolithography.
  • the ZnO film could optionally be annealed.
  • the gate insulator layer 34 may then be deposited and patterned over the channel structure 37 .
  • a 2000 ⁇ Al 2 O 3 film may be sputter deposited, and then patterned via shadow masking or photolithography. Vias may be formed through the gate insulator layer 34 to electrically connect to the source electrode 35 and the drain electrode 36 .
  • the Al 2 O 3 film could optionally be annealed.
  • the gate electrode 33 may then be deposited and patterned over the gate insulator layer 34 .
  • a 2000 ⁇ ITO film may be sputter deposited, and then patterned via shadow masking or photolithography.
  • the ITO film could optionally be annealed.
  • FIG. 9 A fifth variation of a TFT structure 40 is shown in FIG. 9 .
  • the TFT structure 40 includes a glass substrate 2 upon which is disposed a channel layer 41 .
  • a source electrode 43 and a drain electrode 42 are provided on a surface of the channel layer 41 opposing the surface that is adjacent to the glass substrate 2 .
  • a gate insulator layer 44 is disposed over the channel layer 41 , the source electrode 43 , and the drain electrode 42 .
  • a gate electrode 45 is disposed on the top surface (from a vertical perspective) of the gate insulator layer 44 . In other words, the gate electrode 45 and the channel layer 41 are provided on opposing surfaces of the gate insulator layer 44 .
  • the resulting structure defines a channel layer/gate insulator layer interface 46 .
  • the TFT structure 40 may be fabricated, for example, by depositing and patterning a film that defines the channel layer 41 .
  • a 500 ⁇ ZnO film may be sputter deposited, and then patterned via shadow masking or photolithography.
  • the ZnO film could optionally be annealed.
  • the source electrode 43 and the drain electrode 42 may then be deposited and patterned.
  • a 500 ⁇ ITO source/drain electrode film may be sputtered deposited, and then patterned via shadow masking or photolithography.
  • the source/drain electrode film could optionally be annealed.
  • the gate insulator layer 44 may then be deposited and patterned over the channel layer 41 , the source electrode 43 , and the drain electrode 42 .
  • a 2000 ⁇ Al 2 O 3 film may be sputter deposited, and then patterned via shadow masking or photolithography. Vias may be formed through the gate insulator layer 44 to electrically connect to the source electrode 43 and the drain electrode 42 .
  • the Al 2 O 3 film could optionally be annealed.
  • the gate electrode 45 may then be deposited and patterned over the gate insulator layer 44 .
  • a 2000 ⁇ ITO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ITO film could optionally be annealed.
  • FIG. 10 A sixth variation of a TFT structure 50 is shown in FIG. 10 .
  • the TFT structure 50 includes a glass substrate 2 upon which is disposed a channel layer 51 , a source electrode 52 , and a drain electrode 53 .
  • a gate insulator layer 54 is disposed over the channel layer 51 , the source electrode 52 , and the drain electrode 53 .
  • a gate electrode 55 is disposed on the top surface (from a vertical perspective) of the gate insulator layer 54 . In other words, the gate electrode 55 and the channel layer 51 are provided on opposing surfaces of the gate insulator layer 54 .
  • the resulting structure defines a channel layer/gate insulator layer interface 56 .
  • the TFT structure 50 may be fabricated, for example, by depositing and patterning a film that defines the channel layer 51 .
  • a 500 ⁇ ZnO film may be sputter deposited, and then patterned via shadow masking or photolithography.
  • the ZnO film could optionally be annealed.
  • the source electrode 52 and the drain electrode 53 may be made by selectively doping the ends of the channel layer 51 with In, Al, Ga, or any other suitable n-type dopant.
  • the gate insulator layer 54 may then be deposited and patterned over the channel layer 51 , the source electrode 52 , and the drain electrode 53 .
  • a 2000 ⁇ Al 2 O 3 film may be sputter deposited, and then patterned via shadow masking or photolithography. Vias may be formed through the gate insulator layer 54 to electrically connect to the source electrode 52 and the drain electrode 53 .
  • the Al 2 O 3 film could optionally be annealed.
  • the gate electrode 55 may then be deposited and patterned over the gate insulator layer 54 .
  • a 2000 ⁇ ITO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ITO film could optionally be annealed.

Abstract

Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO2 or In2O3, the substantially insulating ZnO, SnO2, or In2O3 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Description

    PRIORITY CLAIM
  • This is a divisional of U.S. patent application Ser. No. 10/350,819, filed Jan. 24, 2003, which is a continuation-in-part of U.S. patent application Ser. No. 10/307,162, filed Nov. 27, 2002, which claims benefit of U.S. Provisional Application 60/382,696, filed May 21, 2002, all of which are incorporated herein be reference in their entireties.
  • FIELD
  • The present disclosure relates to transistor structures such as, for example, transparent transistors.
  • BACKGROUND
  • The microelectronics industry and research community is undertaking efforts to fabricate electronic devices (e.g., diodes and transistors) that are transparent to the portion of the electromagnetic spectrum that is visible to the human eye. Circuits made of such devices would offer unique opportunities for innovation or improvement of consumer-, automotive-, and military-electronics systems.
  • For example, active-matrix liquid crystal displays (AMLCD) are employed extensively in laptop computers and other information display products. The operation of an AMLCD display requires that each picture or display element (pixel) have a corresponding thin-film transistor (TFT) associated with it for selecting or addressing the pixel to be on or off. Currently, AMLCD displays employ transistor materials that may be deposited onto glass substrates but are not transparent (usually amorphous, polycrystalline, or continuous-grain silicon are the materials used to fabricate TFTs on glass). Thus, the portion of the display glass occupied by the addressing electronics is not available for transmission of light through the display. Therefore, the availability of transparent transistors for AMLCD addressing would improve display performance by allowing more light to be transmitted through the display.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • Certain embodiments will be described in more detail with reference to the following drawings:
  • FIG. 1 is a sectional view of a first embodiment of a presently disclosed transistor structure;
  • FIG. 2 is a sectional view of a second embodiment of a presently disclosed transistor structure;
  • FIG. 3 is a sectional view of a third embodiment of a presently disclosed transistor structure;
  • FIG. 4 is a graph showing drain-source current (IDS) versus drain-source voltage (VDS), as a function of gate-source voltage (VGS), for the transistor structure depicted in FIG. 1 (the gate-source voltage varies from +40V (top curve) to +2 V in 2 V steps);
  • FIG. 5 is a graph showing the IDS vs. VGS characteristics for the transistor structure depicted in FIG. 1 at three different drain-source voltages;
  • FIG. 6 is a graph showing inverter transfer characteristics for the transistor structure depicted in FIG. 1 using a transparent thin-film resistor load (R=70 MΩ) and a power supply voltage, VDD=40 V;
  • FIG. 7 is a graph showing the optical transmission characteristics through the source or drain portion of the transistor structure depicted in FIG. 1;
  • FIG. 8 is a sectional view of a fourth embodiment of a presently disclosed transistor structure;
  • FIG. 9 is a sectional view of a fifth embodiment of a presently disclosed transistor structure;
  • FIG. 10 is a sectional view of a sixth embodiment of a presently disclosed transistor structure;
  • FIG. 11 is a schematic representation of an example of a cell circuit for an AMLCD that includes the presently disclosed transistor structure;
  • FIG. 12 is a schematic representation of an example of a dynamic random-access memory (DRAM) cell circuit that includes the presently disclosed transistor structure;
  • FIG. 13 is a schematic representation of an example of a logic inverter that includes the presently disclosed transistor structure; and
  • FIG. 14 is a schematic representation of an example of an inverting amplifier circuit that includes the presently disclosed transistor structure.
  • DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS
  • For ease of understanding, the following terms used herein are described below in more detail:
  • “Enhancement-mode transistor” means a transistor in which there is negligible off-current flow, relative to on-current flow, between a source and a drain at zero gate voltage. In other words, the transistor device is “normally off.” In contrast, a depletion-mode transistor is “normally on” meaning that more than a substantially negligible current flows between a source and a drain at zero gate voltage.
  • “Gate” generally refers to the insulated gate terminal of a three terminal FET when used in the context of a transistor circuit configuration.
  • “Substantially insulating” can include insulating materials (e.g., materials having a resistivity of greater than about 1010 Ω-cm) and semi-insulating materials (e.g., materials having a resistivity of about 103 Ω-cm to about 1010 Ω-cm).
  • “Substantially transparent” generally denotes a material or construct that does not absorb a substantial amount of light in the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum.
  • “Vertical” means substantially perpendicular to the surface of a substrate.
  • The preceding term descriptions are provided solely to aid the reader, and should not be construed to have a scope less than that understood by a person of ordinary skill in the art or as limiting the scope of the appended claims.
  • Disclosed herein are enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. Devices that include the transistors and methods for making the transistors are also disclosed.
  • One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. The transistor also includes a source that can inject electrons into the channel layer for accumulation at the channel layer/gate insulator layer interface and a drain that can extract electrons from the channel layer.
  • A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, substantially insulating SnO2, or substantially insulating In2O3, the substantially insulating ZnO, substantially insulating SnO2, or substantially insulating In2O3 being produced by annealing. A gate insulator layer is located adjacent to the channel layer and comprises a substantially transparent material. The transistor also includes a source, a drain, and a gate electrode.
  • A method for making the transistors includes providing a gate insulating layer, depositing ZnO, SnO2 or In2O3 onto at least a portion of a surface of the gate insulating layer, and annealing the ZnO, SnO2 or In2O3 for about 1 minute to about 2 hours at a temperature of about 300 to about 1000° C. in an oxidative atmosphere.
  • The transistors may be included in optoelectronic display devices as switches coupled to at least one display element. Another disclosed device is a substantially transparent, dynamic random-access memory cell, comprising a substantially transparent capacitor coupled to the transistor. A further application of the transistors is in substantially transparent inverters wherein the transistor is coupled to a load device.
  • In general, the transistor structure includes a substrate, a gate electrode, a gate insulator layer, a channel layer, a source and a drain. The channel layer may be positioned adjacent to the gate insulator layer so that a surface of the channel layer is contiguous with a surface of the gate insulator layer. The contact region of the channel layer surface and the gate insulator layer surface is referred to herein as the channel layer/gate insulator layer interface. In exemplary constructs, the channel layer insulating material is different than the gate insulator layer material and the channel layer/gate insulator layer interface defines a discrete material boundary.
  • A feature of an embodiment of the transistor structure is that the channel layer/gate insulator layer interface may define a conducting channel for the flow of electrons from the source to the drain. In other words, the transistor may be classified as a “surface-channel” or “interface-channel” device. The applied gate voltage facilitates electron accumulation in the channel layer/gate insulator layer interface region. In addition, the applied voltage enhances electron injection from the source to the channel layer/gate insulator layer interface and electron extraction therefrom by the drain.
  • Another characteristic of the transistor structure is that selected embodiments of the construct or combination of the channel layer and the gate insulator layer may exhibit an optical transmission of at least about 90%, more particularly at least about 95%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum. Each of the additional components of the structure (i.e., substrate, gate electrode, source/drain terminals) may be optionally opaque or substantially transparent depending upon the desired end use of the transistor. In certain embodiments, the transistor structure as a whole (and/or individual components of the transistor) may exhibit an optical transmission of at least about 50%, more particularly at least about 70%, and most particularly at least about 90%, across the visible portion (and/or infrared portion in certain variants) of the electromagnetic spectrum.
  • A further feature of the FET disclosed herein is that it may easily be fabricated as a thin film transistor (TFT). For example, relatively low processing temperatures (e.g., not exceeding about 800° C.) may be used and there is no need for ion implanting to set the channel threshold voltage and define the source and drain contacts in certain variants of the FET structure. Such TFTs typically are very useful in association with optoelectronic device as explained below in more detail.
  • The channel layer typically is made from a substantially insulating material that is also substantially transparent. A negligible amount of electrons is inherently available in the bulk portion of the channel layer since the channel layer is made from a substantially insulating material. In addition, the substantially insulating channel layer may provide inherent electrical isolation for multiple devices sharing a continuous channel layer film (with patterned gate, source, and drain electrodes defining each device). Such inherent device isolation means that patterning of the channel layer film is not necessary since conductivity at the channel layer/gate insulator layer is exhibited only beneath the patterned gate electrodes.
  • Illustrative materials for the channel layer include ZnO, SnO2 and In2O3. Insulating ZnO, SnO2, and In2O3 may be made by an annealing process, particularly rapid thermal annealing (RTA). Such insulating ZnO, SnO2 and In2O3 typically exhibit a bandgap of less than about 5 eV.
  • For example, a layer of ZnO may be deposited (e.g., by sputtering, chemical vapor deposition, spin coating, physical vapor deposition, vapor phase epitaxy, molecular beam epitaxy, etc.) and subsequently undergo annealing for about 1 minute to about 2 hours, more particularly about 1 minute to about 1 hour, and about 1 minute to about 5 minutes in certain instances, at a temperature of about 300 to about 1000° C., particularly about 700 to about 800° C., in a substantially oxidative atmosphere. Although not bound by any theory, it is believed that such a process should result in the incorporation of more oxygen into the ZnO layer, thus reducing the oxygen vacancy concentration or degree of oxygen deficiency. Oxygen vacancies or oxygen deficiency in ZnO can render it n-type and conductive. High temperature (i.e., at least about 700° C.) annealing in inert atmospheres such as argon may also produce insulating ZnO. Although not bound by any theory, such higher temperature anneals may improve the ZnO crystallinity, thus improving the electron transport properties. Such insulating ZnO may or may not be doped. If doped, the resistivity of the ZnO may also be enhanced by substitutional doping with an acceptor dopant such as, for example, N, Cu, Li, Na, K, Rb, P, As, and mixtures thereof.
  • Similarly, a layer of SnO2 may be deposited (e.g., by sputtering, chemical vapor deposition, spin coating, physical vapor deposition, vapor phase epitaxy, molecular beam epitaxy, etc.) and subsequently undergo annealing for about 1 minute to about 2 hours, more particularly about 1 minute to about 1 hour, and about 1 minute to about 5 minutes in certain instances, at a temperature of about 300 to about 1000° C., particularly about 700 to about 900° C., in a substantially oxidative atmosphere. Although not bound by any theory, it is believed that such a process should result in the incorporation of more oxygen into the SnO2 layer, thus reducing the oxygen vacancy concentration or degree of oxygen deficiency. Oxygen vacancies or oxygen deficiency in SnO2 can render it n-type and conductive. High temperature (i.e., greater than about 700° C.) annealing in inert atmospheres such as argon may also produce insulating SnO2. Although not bound by any theory, such higher temperature anneals may improve the SnO2 crystallinity, thus improving the electron transport properties. The resistivity of the SnO2 may also be enhanced by substitutional doping with an acceptor dopant such as, for example, Al, In, Ga, Bi, B, La, Sc, Y, Lu, Er, Ho, N, P, As, and mixtures thereof.
  • Also similarly, a layer of In2O3 may be deposited (e.g., by sputtering, chemical vapor deposition, spin coating, physical vapor deposition, vapor phase epitaxy, molecular beam epitaxy, etc.) and subsequently undergo annealing for about 1 minute to about 2 hours, more particularly about 1 minute to about 1 hour, and about 1 minute to about 5 minutes in certain instances, at a temperature of about 300 to about 1000° C., particularly about 700 to about 900° C., in a substantially oxidative atmosphere. Although not bound by any theory, it is believed that such a process should result in the incorporation of more oxygen into the In2O3 layer, thus reducing the oxygen vacancy concentration or degree of oxygen deficiency. Oxygen vacancies or oxygen deficiency in In2O3 can render it n-type and conductive. High temperature (i.e., greater than about 700° C.) annealing in inert atmospheres such as argon may also produce insulating In2O3. Although not bound by any theory, such higher temperature anneals may improve the In2O3 crystallinity, thus improving the electron transport properties. The resistivity of the In2O3 may also be enhanced by substitutional doping with an acceptor dopant such as, for example, Be, Mg, Ca, Sr, Ba, N, P, As, Zn, Cd, and mixtures thereof.
  • According to particular embodiments, the ZnO, SnO2, or In2O3 layer may be sputter deposited in an atmosphere that includes at least one sputter gas, and at least one film-modifying gas. The film-modifying gas may be any gas that can enhance the resistivity of the film via incorporation into the film on an atomic or sub-atomic level. For example, a film-modifying gas may be an oxidative gas whose molecules, atoms or ions are incorporated into the film so that they occupy oxygen vacancies or deficiencies in the film as described above. Another film-modifying gas may be a dopant gas whose molecules, atoms or ions are incorporated into the film so that they increase the resistivity of the film. Illustrative sputter gases include Ar, Ne, and mixtures thereof. Illustrative oxidative gases include O2, N2O and mixtures thereof. Illustrative dopant gases include N2, NH3 and other gases containing the dopant species listed above. The concentrations of the gases in the sputter atmosphere may be varied depending upon the desired characteristics of the film. For example, the concentration of oxidative gas may range from about 0 to about 50 volume percent. The concentration of dopant gas may range from about 0 to about 50 volume percent. The concentration of sputter gas may range from about 0 to about 100 volume percent. The sputtering conditions may also be varied depending upon the desired characteristics of the film. For instance, the temperature may range from about room temperature to 600° C., and the pressure may range from about 1 mTorr to about 50 mTorr. In a specific example, an undoped ZnO target may be sputter deposited in an atmosphere that includes 80 volume percent Ar, 10 volume percent N2, and 10 volume percent O2.
  • The thickness of the channel layer may vary, and according to particular examples it can range from about 10 to about 500 nm. The channel length also may vary, and according to particular examples it can range from about 1,000 to about 100,000 nm.
  • The gate insulator layer may be made from any material exhibiting insulating properties required for gate insulators, particularly a substantially transparent material. Gate insulator materials typically exhibit a bandgap of greater than about 5 eV. Illustrative materials include substantially transparent materials such as aluminum-titanium oxide (Al2O3/TiO2), Al2O3, MgO, SiO2, silicon nitride, and silicon oxynitride. One distinctive example of a substantially transparent material is aluminum-titanium oxide grown by atomic layer deposition. The thickness of the gate insulator layer may vary, and according to particular examples it can range from about 10 to about 300 nm. The gate insulator layer may be introduced into the structure by techniques such as chemical vapor deposition, sputtering, atomic layer deposition, or evaporation.
  • Source/drain terminals refer to the terminals of a FET, between which conduction occurs under the influence of an electric field. Designers often designate a particular source/drain terminal to be a “source” or a “drain” on the basis of the voltage to be applied to that terminal when the FET is operated in a circuit. The source and drain may be made from any suitable conductive material such as an n-type material. The source and drain materials are optionally opaque materials or substantially transparent materials. Illustrative materials include transparent, n-type conductors such as indium-tin oxide (ITO), ZnO, SnO2, or In2O3 or opaque metals such as Al, Cu, Au, Pt, W, Ni, or Ti. Especially useful materials for the source and drain are those that can inject (and extract) electrons into the channel layer insulating material. Examples of such electron injection materials include indium-tin oxide, LaB6, and ZnO:Al.
  • The source and drain may be introduced into the structure by techniques such as chemical vapor deposition, sputtering, evaporation, and/or doping of the channel layer material via diffusion or ion implantation. The source and drain terminals may be fabricated such that they are geometrically symmetrical or non-symmetrical.
  • The gate electrode may be made from any suitable conductive material. The gate electrode material is optionally an opaque material or a substantially transparent material. Illustrative gate electrode materials include transparent, n-type conductors such as indium-tin oxide (ITO), ZnO, SnO2, or In2O3, or opaque metals such as Al, Cu, Au, Pt, W, Ni, or Ti. The thickness of the gate electrode may vary, and according to particular examples it can range from about 50 to about 1000 nm. The gate electrode may be introduced into the structure by chemical vapor deposition, sputtering, evaporation and/or doping.
  • “Substrate”, as used herein, refers to the physical object that is the basic workpiece that is transformed by various process operations into the desired microelectronic configuration. A substrate may also be referred to as a wafer. Wafers may be made of semiconducting, non-semiconducting, or combinations of semiconducting and non-semiconducting materials. The substrate may be made from any suitable material. The substrate material is optionally an opaque material or a substantially transparent material. Illustrative substrate materials include glass and silicon. The thickness of the substrate may vary, and according to particular examples it can range from about 100 μm to about 1 cm.
  • Electrical contact to the gate electrode, source, drain and substrate may be provided in any manner. For example, metal lines, traces, wires, interconnects, conductors, signal paths and signaling mediums may be used for providing the desired electrical connections. The related terms listed above, are generally interchangeable, and appear in order from specific to general. Metal lines, generally aluminum (Al), copper (Cu) or an alloy of Al and Cu, are conductors that provide signal paths for coupling or interconnecting, electrical circuitry. Conductors other than metal may also be utilized.
  • An illustrative n-channel operation of the transistor involves applying a positive voltage to the gate electrode, grounding the source, and applying a positive voltage to the drain. For example, a voltage of about 5 to about 40 V may be applied to the gate electrode and the drain during operation. The threshold voltage may range from about 1 to about 20 V. Electrons flow from the source, along the conducting channel created at the channel layer/gate insulator layer interface, and out of the transistor through the drain. The effective mobility of the electrons at the interface may vary depending upon the specific structure, but could range, for example, from about 0.05 to about 20 cm2V−1s−1. Simply removing the positive voltage applied to the gate electrode turns the transistor off since the transistor is an enhancement-mode transistor.
  • The transistor structures disclosed herein may be used for fabricating chips, integrated circuits, monolithic devices, semiconductor devices, and microelectronic devices. One example of a microelectronic device is an optoelectronic device. An illustrative optoelectronic device is an active-matrix liquid-crystal display (AMLCD).
  • One exemplar device is an optoelectronic display device that includes elements having electrodes and an electro-optical material disposed between the electrodes. A connection electrode of the transparent transistor may be connected to an electrode of the display element, while the switching element and the display element overlap one another at least partly. An optoelectronic display element is here understood to be a display element whose optical properties change under the influence of an electrical quantity such as current or voltage such as, for example, an element usually referred to as liquid crystal display (LCD). The presently detailed transparent transistor is sufficiently fast for switching the display element at such a high frequency that the use of the transparent transistor as a switching element in a liquid crystal display is possible. The display element acts in electrical terms as a capacitor that is charged or discharged by the accompanying transparent transistor. The optoelectronic display device may include many display elements each with its own transparent transistor, for example, arranged in a matrix. The transparent transistors may be arrayed for LCD devices as described, for example, in Kim, “Thin-Film-Transistor Device Design”, Information Display 2/02, p. 26 (2002).
  • One specific example of an AMLCD cell circuit is depicted in FIG. 11. The AMLCD cell circuit includes a transistor 60 as presently described, and a LCD pixel 61 electrically coupled thereto. The transistor 60 and the LCD pixel 61 together form a transistor/pixel cell 62. In the arrangement shown, the transistor 60 is electrically coupled to the LCD pixel 61 via the drain electrode. The gate electrode of the transistor 60 is electrically coupled to a row or control line 63 that receives on/off input for the transistor 60. The source electrode of the transistor 60 is electrically coupled to a column or data line 64 that receives a signal for controlling the LCD pixel 61.
  • Other examples of microelectronic devices that could employ the transistor structure shown herein include inverters, analog amplifiers and single-transistor dynamic random-access memory (DRAM) cells, and like devices.
  • For instance, a transparent enhancement-mode transistor whose source is connected to one terminal of a transparent capacitor, while the other terminal of the capacitor is grounded, constitutes a transparent single-transistor dynamic random-access memory (DRAM) cell. In such a DRAM cell, information is stored as charge on a capacitor, with the enhancement-mode transistor serving as an access transistor that controls the capacitor charge state. Usually in such a DRAM cell, a logic 0 is represented by negligible capacitor charge and a concomitantly small capacitor voltage. In contrast, a logic 1 is obtained by charging the capacitor, thus increasing the capacitor voltage until it approaches the power supply voltage.
  • The entire DRAM cell described herein, or a portion thereof, is transparent. Fabricating transparent capacitors and connecting them to a transparent transistor to realize a DRAM cell can be accomplished using various techniques. Specifically, a transparent capacitor may be constructed by sandwiching a transparent insulator layer, using materials such as Al2O3 or SiO2, between two transparent conductors, using materials such as indium-tin oxide, ZnO, or SnO2.
  • One specific example of a DRAM cell circuit is depicted in FIG. 12. The DRAM cell circuit includes a transistor 70 as presently described, and a storage capacitor 71 electrically coupled thereto. The transistor 70 and the storage capacitor 71 together form a transistor/capacitor cell 72. In the arrangement shown, the transistor 70 is electrically coupled to the storage capacitor 71 via the drain electrode. The gate electrode of the transistor 70 is electrically coupled to a row or write line 73 that receives on/off input for the transistor 70. The source electrode of the transistor 70 is electrically coupled to a column or data line 74 that receives a signal for controlling what is stored on the storage capacitor 71.
  • Illustrative examples of specific transistor structures are shown in FIGS. 1-3 and FIGS. 8-10. The specific examples described below are for illustrative purposes and should not be considered as limiting the scope of the appended claims. In FIGS. 1-3 and 8-10 like reference numerals refer to like elements unless otherwise indicated.
  • FIG. 1
  • A TFT structure 1 is illustrated that was fabricated on a one-inch by one-inch thick composite substrate. The platform includes a glass substrate 2, a 200 nm thick, indium-tin oxide (ITO) gate electrode 3 coated on the substrate 2, and a 200 nm thick, aluminum-titanium oxide gate insulator layer 4.
  • A ZnO channel and an ITO source/drain electrode film was deposited via ion beam sputtering in 10−4 Torr of Ar/O2 (80%/20%); the substrate was unheated during deposition. The ZnO channel layer 5 (100 nm thick), an ITO source electrode 6 (300 nm thick) and, an ITO drain electrode 7 (300 nm thick) were defined using a shadow mask. The resulting structure defines a channel layer/gate insulator layer interface 8. A 300° C. rapid thermal anneal (RTA) in Ar immediately prior to both the ZnO and ITO depositions served to remove adsorbed contaminants from the exposed surface, yielding a noticeable improvement in film quality (particularly for ITO films). After deposition of the ZnO layer, a RTA (typically in O2 or Ar, at 600 to 800° C.) was employed to increase the ZnO channel resistivity and to improve the electrical quality of the channel layer/gate insulating layer interface 8. Following deposition of the ITO source/drain electrodes, a 300° C. RTA in O2 was used to improve the transparency of the ITO layer. In the transistor structure 1 the source/drain electrodes 6 and 7 are disposed on the top surface of the channel layer 5 (from a vertical perspective) and the gate electrode 3 and channel layer 5 are disposed, respectively, on opposing surfaces of the gate insulator layer 4. Consequently, structure 1 allows for high temperature processing of the ZnO channel layer 5 prior to deposition and processing of the ITO source/drain electrodes 6 and 7. Certain electrical and physical characteristics of the TFT structure 1 were evaluated as described below and illustrated in FIGS. 4-7.
  • With reference to FIG. 4, n-channel, enhancement-mode behavior is obtained as demonstrated by the fact that a positive gate voltage in excess of ˜15 V (the threshold) is required to obtain appreciable drain-source current. These IDS-VDS curves exhibit prototypical FET characteristics; of particular significance is the flatness of these curves at large drain voltages (i.e. they exhibit ‘hard’ saturation). The drain and gate voltages employed are rather large compared to conventional FETs; gate and drain voltages can be reduced to the range expected for typical FET operation (i.e. ˜5-10 V), by simply reducing the gate insulator thickness. In the TFT structure 1 the insulator thickness is ˜200 nm, as optimized for electroluminescent display applications; if an otherwise identical insulator is rescaled to a thickness of 20 nm, the gate and drain voltages will be reduced by a factor of approximately 10.
  • The IDS of structure 1 is currently rather small (i.e., IDS (max) is about 6 μA in FIG. 4). A larger IDS may be desirable for most applications. The magnitude of IDS is determined by two factors. One is the effective mobility of the channel electrons, μeff (about 0.05-0.2 cm2V−1s−1 for the TFT structure 1). Process/device optimization should result in an improvement in μeff by a factor of about 2 to 100 which will lead to a corresponding increase in IDS. The second factor is the aspect ratio. The aspect ratio of the TFT structure 1 (the physical width of the gate, Z, divided by the length of the gate, L) is about 2 (with Z=2 L=6000 μm). A larger aspect ratio will lead to a larger IDS.
  • FIG. 5 illustrates the IDS-VGS characteristics of the TFT structure 1 at three different drain voltages. This figure shows that there is a factor of 105-106 difference between the ‘on’ and ‘off’ currents when the transistor is used as a switch.
  • FIG. 6 shows the transfer characteristics of the TFT structure 1 when it is employed as an inverter. A ZnO transparent thin-film resistor (R=70 MΩ) is used as the inverter passive load with a power supply voltage VDD=40 V. A logic swing of about 15 V between 15 and 30 V is clearly evident from this curve. This constitutes a demonstration of the use of the presently described transparent TFT as a transparent inverter. In its simplest implementation, a logic inverter is comprised of two constituents: a transistor coupled to a load device. The load device may be a resistor, as employed in this example. Alternatively, a depletion- or enhancement-mode transistor may also be used as load devices, typically offering superior performance. The fundamental property of a logic inverter is that it performs a logical not operation, in which a logic 0 (1) input produces a logic 1 (0) output. Successful achievement of a transparent logic inverter, as described herein, is significant since the inverter is the most basic building block for achieving transparent digital electronics. Optimization of the transparent thin film transistor via reducing the insulator thickness, reducing physical dimensions, and increasing the current drive capability (increased aspect ratio and effective mobility) will lead to a significant reduction in the required power supply voltage for inverter operation.
  • One specific example of a logic inverter circuit is depicted in FIG. 13. The logic inverter circuit includes a transistor 80 as presently described. The gate electrode of the transistor 80 is electrically coupled to a voltage input (Vin), the source electrode of the transistor 80 is electrically coupled to ground, and the drain electrode of the transistor 80 is electrically coupled to a load 81 and a power source (VDD). The load 81 may be a transparent thin-film resistor or a transparent thin-film transistor. The voltage (Vout) out of the circuit is controlled by whether Vin turns the transistor 80 on or off.
  • Transparent transistors may also be employed in amplifier applications. For example, the inverter structures described above can also function as simple analog inverting amplifiers. With the appropriate DC bias at the input, a small input signal (superimposed upon the DC bias) is amplified by the inverter transfer characteristic. In addition to such simple amplifier configurations, these transistors could be directly applied in arbitrary amplifier configurations, with the limitation that the maximum operating frequency will be relatively low due to the low mobility of these devices.
  • One specific example of an inverting amplifier circuit is depicted in FIG. 14. The inverting amplifier circuit includes a transistor 90 as presently described. The gate electrode of the transistor 90 is electrically coupled to a voltage input signal (Vin) and a DC bias (Vbias). The source electrode of the transistor 90 is electrically coupled to ground, and the drain electrode of the transistor 90 is electrically coupled to a load 91 and a power source (VDD). The load 91 may be a transparent thin-film resistor or a transparent thin-film transistor.
  • FIG. 7 shows the optical transmission of the TFT structure 1 through the source 6 or drain 7 (optical transmission through the channel, not shown here, is higher than through the source or drain). The average transmission in the visible portion of the electromagnetic spectrum (450-700 nm) is about 90% (about 95% through the channel). Visually, the transparent TFT structure is essentially invisible; a slight tinting of the glass substrate is apparent upon close inspection.
  • FIG. 2
  • In another transparent TFT structure 10 version shown in FIG. 2, a source electrode 11 (100 nm thick) and a drain electrode 12 (100 nm thick) were made by selectively doping the ends of a ZnO channel layer 13 (100 nm thick) with In (or any other suitable n-type dopant). This was accomplished by ion beam sputter depositing a thin (about 5 nm) ITO layer using the source/drain shadow mask before depositing the ZnO channel film. A subsequent high-temperature (˜600-800° C.) annealing step was performed to diffusion-dope the ZnO, thus forming n-type doped source/ drain regions 11 and 12. The diffusion-doping RTA may also function as the oxidizing RTA for the ZnO. ITO contacts may be placed over the source and drain regions to provide better electrical contact. The substrate 2, gate electrode 3, gate insulator layer 4, and channel layer/gate insulator layer interface 8 are the same as in FIG. 1.
  • FIG. 3
  • In a third variation of a TFT structure 20, an ITO source electrode 21 (300 nm thick) and ITO drain electrode 22 (300 nm thick) are deposited prior to formation of a ZnO channel layer 23 (100 nm thick). The ZnO channel layer 23 is subsequently deposited conformally over the ITO source/ drain electrodes 21 and 22. After deposition of the ZnO, a 700° C. Ar anneal was performed, followed by a 300° C. oxygen anneal. The substrate 2, gate electrode 3, gate insulator layer 4, and channel layer/gate insulator layer interface 8 are the same as in FIG. 1.
  • FIG. 8
  • A fourth variation of a TFT structure 30 is shown in FIG. 8. The TFT structure 30 includes a glass substrate 2 upon which is disposed a source electrode 35 and a drain electrode 36. A channel structure 37 is provided that includes a bulk section 38 positioned between the source electrode 35 and the drain electrode 36 and adjacent to the glass substrate 2. The channel structure 37 also includes an interface section 39 that is integral with the bulk section 38, and interposed between a gate insulator layer 34 and the source electrode 35 and the drain electrode 36, respectively. The interface section 39 may overlap all or only a portion of each of the source electrode 35 and the drain electrode 36. The interface section 39 and the gate insulator layer 34 form a channel layer/gate interface layer 31 that defines a conducting channel for the flow of electrons from the source to the drain. A gate electrode 33 is disposed on the top surface (from a vertical perspective) of the gate insulator layer 34. In other words, the gate electrode 33 and the channel structure 37 are provided on opposing surfaces of the gate insulator layer 34.
  • The TFT structure 30 may be fabricated, for example, by depositing and patterning a film that defines the source electrode 35 and the drain electrode 36. For instance, a 500 Å ITO source/drain electrode film may be sputtered onto the glass substrate 2. The source and drain patterning may be accomplished via shadow masking or photolithography. The source/drain electrode film could optionally be annealed. The channel structure 37 may then be deposited and patterned over the source electrode 35, the drain electrode 36, and the substrate 2. For example, a 500 Å ZnO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ZnO film could optionally be annealed. Subsequently, the gate insulator layer 34 may then be deposited and patterned over the channel structure 37. For example, a 2000 Å Al2O3 film may be sputter deposited, and then patterned via shadow masking or photolithography. Vias may be formed through the gate insulator layer 34 to electrically connect to the source electrode 35 and the drain electrode 36. The Al2O3 film could optionally be annealed. The gate electrode 33 may then be deposited and patterned over the gate insulator layer 34. For example, a 2000 Å ITO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ITO film could optionally be annealed.
  • FIG. 9
  • A fifth variation of a TFT structure 40 is shown in FIG. 9. The TFT structure 40 includes a glass substrate 2 upon which is disposed a channel layer 41. A source electrode 43 and a drain electrode 42 are provided on a surface of the channel layer 41 opposing the surface that is adjacent to the glass substrate 2. A gate insulator layer 44 is disposed over the channel layer 41, the source electrode 43, and the drain electrode 42. A gate electrode 45 is disposed on the top surface (from a vertical perspective) of the gate insulator layer 44. In other words, the gate electrode 45 and the channel layer 41 are provided on opposing surfaces of the gate insulator layer 44. The resulting structure defines a channel layer/gate insulator layer interface 46.
  • The TFT structure 40 may be fabricated, for example, by depositing and patterning a film that defines the channel layer 41. For instance, a 500 Å ZnO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ZnO film could optionally be annealed. The source electrode 43 and the drain electrode 42 may then be deposited and patterned. For example, a 500 Å ITO source/drain electrode film may be sputtered deposited, and then patterned via shadow masking or photolithography. The source/drain electrode film could optionally be annealed. Subsequently, the gate insulator layer 44 may then be deposited and patterned over the channel layer 41, the source electrode 43, and the drain electrode 42. For example, a 2000 Å Al2O3 film may be sputter deposited, and then patterned via shadow masking or photolithography. Vias may be formed through the gate insulator layer 44 to electrically connect to the source electrode 43 and the drain electrode 42. The Al2O3 film could optionally be annealed. The gate electrode 45 may then be deposited and patterned over the gate insulator layer 44. For example, a 2000 Å ITO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ITO film could optionally be annealed.
  • FIG. 10
  • A sixth variation of a TFT structure 50 is shown in FIG. 10. The TFT structure 50 includes a glass substrate 2 upon which is disposed a channel layer 51, a source electrode 52, and a drain electrode 53. A gate insulator layer 54 is disposed over the channel layer 51, the source electrode 52, and the drain electrode 53. A gate electrode 55 is disposed on the top surface (from a vertical perspective) of the gate insulator layer 54. In other words, the gate electrode 55 and the channel layer 51 are provided on opposing surfaces of the gate insulator layer 54. The resulting structure defines a channel layer/gate insulator layer interface 56.
  • The TFT structure 50 may be fabricated, for example, by depositing and patterning a film that defines the channel layer 51. For instance, a 500 Å ZnO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ZnO film could optionally be annealed. The source electrode 52 and the drain electrode 53 may be made by selectively doping the ends of the channel layer 51 with In, Al, Ga, or any other suitable n-type dopant. Subsequently, the gate insulator layer 54 may then be deposited and patterned over the channel layer 51, the source electrode 52, and the drain electrode 53. For example, a 2000 Å Al2O3 film may be sputter deposited, and then patterned via shadow masking or photolithography. Vias may be formed through the gate insulator layer 54 to electrically connect to the source electrode 52 and the drain electrode 53. The Al2O3 film could optionally be annealed. The gate electrode 55 may then be deposited and patterned over the gate insulator layer 54. For example, a 2000 Å ITO film may be sputter deposited, and then patterned via shadow masking or photolithography. The ITO film could optionally be annealed.
  • Having illustrated and described the principles of the disclosed devices and methods with reference to several embodiments, it should be apparent that these devices and methods may be modified in arrangement and detail without departing from such principles.

Claims (22)

1. A method for making an enhancement mode, field effect transistor comprising:
depositing ZnO, SnO2, or In2O3 onto at least a portion of a surface of a gate insulating layer; and
annealing the ZnO, SnO2, or In2O3 for about 1 minute to about 2 hours at a temperature of about 300 to about 1000° C. in an oxidative or inert atmosphere.
2. The method according to claim 1, wherein ZnO is deposited.
3. The method according to claim 1, wherein the gate insulator layer comprises a substantially transparent material.
4. The method according to claim 1, wherein the annealing temperature is about 700 to about 800° C.
5. The method according to claim 1, further comprising depositing on the ZnO, SnO2 or In2O3 layer at least one material for forming a source and a drain.
6. The method according to claim 1, further comprising depositing on the gate insulating layer at least one material for forming a source and a drain prior to depositing the ZnO, SnO2, or In2O3.
7. The method according to claim 6, wherein the material for forming a source and a drain is ion beam sputtered deposited onto the gate insulating layer, and the annealing of the ZnO diffusion dopes the ZnO with the source and drain material.
8. A method for making an enhancement mode, field effect transistor comprising:
depositing ZnO, SnO2 or In2O3 onto at least a portion of a surface of a gate insulating layer; and
treating the ZnO, SnO2 or In2O3 such that the treated ZnO, SnO2, or In2O3 has a higher resistivity and a lower oxygen vacancy concentration relative to the untreated ZnO, SnO2, or In2O3.
9. The method according to claim 2, further comprising introducing an acceptor dopant into the ZnO.
10. The method according to claim 1, wherein the depositing of ZnO, SnO2, or In2O3 comprises sputter depositing the ZnO, SnO2, or In2O3 in an atmosphere that includes at least one sputter gas and at least one gas that can modify a film formed by the ZnO, SnO2, or In2O3.
11. The method according to claim 10, wherein the film-modifying gas comprises at least one gas selected from an oxidative gas or a dopant gas.
12. The method according to claim 11, wherein the oxidative gas comprises oxygen and the dopant gas comprises nitrogen.
13. The method according to claim 1, wherein the ZnO, SnO2, or In2O3 is annealed for about 1 minute to about 5 minutes.
14. The method according to claim 1, wherein the deposited and annealed ZnO, SnO2, or In2O3 forms a channel layer comprising a substantially insulating, substantially transparent, material.
15. The method according to claim 2, wherein the ZnO is vapor deposited.
16. The method according to claim 1, wherein the field effect transistor exhibits an optical transmission through the field effect transistor of at least about 70% in the visible portion of the electromagnetic spectrum.
17. The method according to claim 1, wherein the In2O3 or SnO2 is deposited via chemical vapor deposition, sputtering, spin-coating, physical vapor deposition, vapor phase epitaxy, or molecular beam epitaxy.
18. The method according to claim 1, wherein In2O3 is deposited.
19. The method according to claim 10, wherein the annealing temperature is at least about 700° C.
20. The method according to claim 1, wherein the annealing temperature is at least about 700° C.
21. The method according to claim 11, wherein the oxidative gas comprises O2, N2O or a mixture thereof.
22. The method according to claim 11, wherein the dopant gas comprises N2, or NH3.
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Cited By (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070108446A1 (en) * 2005-11-15 2007-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070261951A1 (en) * 2006-04-06 2007-11-15 Yan Ye Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
US20080038882A1 (en) * 2006-08-09 2008-02-14 Kazushige Takechi Thin-film device and method of fabricating the same
US20080197344A1 (en) * 2007-02-16 2008-08-21 Koki Yano Semiconductor, semiconductor device, complementary transistor circuit device
US20080264777A1 (en) * 2007-04-27 2008-10-30 Yan Ye Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US20080296569A1 (en) * 2003-09-18 2008-12-04 Industrial Technology Research Institute Compound semiconductor material and method for forming an active layer of a thin film transistor device
US20080308805A1 (en) * 2005-09-29 2008-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US20090050884A1 (en) * 2007-08-02 2009-02-26 Yan Ye Thin film transistors using thin film semiconductor materials
US20090166616A1 (en) * 2007-12-26 2009-07-02 Hitachi, Ltd. Oxide semiconductor device and surface treatment method of oxide semiconductor
US20090233424A1 (en) * 2008-03-14 2009-09-17 Yan Ye Thin film metal oxynitride semiconductors
US20090239359A1 (en) * 2008-03-24 2009-09-24 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US20090236597A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US20100001274A1 (en) * 2008-07-02 2010-01-07 Applied Materials, Inc. Capping Layers for Metal Oxynitride TFTS
US20100044701A1 (en) * 2007-02-20 2010-02-25 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
US20100244017A1 (en) * 2009-03-31 2010-09-30 Randy Hoffman Thin-film transistor (tft) with an extended oxide channel
US20100283055A1 (en) * 2005-12-02 2010-11-11 Kazuyoshi Inoue Tft substrate and tft substrate manufacturing method
US20110070691A1 (en) * 2009-09-24 2011-03-24 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
US20110073463A1 (en) * 2009-09-28 2011-03-31 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US20110089975A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US20110089419A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110116310A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20110216571A1 (en) * 2010-03-04 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US8158974B2 (en) 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US8508967B2 (en) 2010-09-03 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
CN103474469A (en) * 2010-12-28 2013-12-25 出光兴产株式会社 Laminate structure including oxide semiconductor thin film layer, and thin film transistor
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8659014B2 (en) 2006-08-30 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8785243B2 (en) 2012-04-02 2014-07-22 Samsung Display Co., Ltd. Method for manufacturing a thin film transistor array panel
US8994400B2 (en) 2009-12-11 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US9007813B2 (en) 2010-05-14 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9042161B2 (en) 2010-09-13 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9048144B2 (en) 2008-10-03 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Display device
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9093262B2 (en) 2009-11-20 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9142549B2 (en) 2010-03-19 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9147462B2 (en) 2010-01-20 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US9190413B2 (en) 2010-02-05 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9236157B2 (en) 2009-09-03 2016-01-12 Isis Innovation Limited Transparent electrically conducting oxides
US9336858B2 (en) 2010-01-22 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US9349735B2 (en) 2009-12-25 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9385128B2 (en) 2011-03-18 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9391095B2 (en) 2009-12-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9424923B2 (en) 2010-12-17 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
TWI547945B (en) * 2011-03-30 2016-09-01 半導體能源研究所股份有限公司 Semiconductor device and driving method thereof
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443563B2 (en) 2011-04-29 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9508448B2 (en) 2011-03-08 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US9552902B2 (en) 2008-02-28 2017-01-24 Oxford University Innovation Limited Transparent conducting oxides
US9589961B2 (en) 2009-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including write access transistor having channel region including oxide semiconductor
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9601635B2 (en) 2009-10-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9620525B2 (en) 2009-12-18 2017-04-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9646521B2 (en) 2010-03-31 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US9666678B2 (en) 2009-10-16 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9673336B2 (en) 2011-01-12 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9673337B2 (en) 2009-10-30 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9698278B2 (en) 2013-12-24 2017-07-04 Boe Technology Group Co., Ltd. Thin film transistor and manufacturing method thereof, array substrate, display device
US9773810B2 (en) 2011-04-29 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9852108B2 (en) 2010-03-08 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Processor including first transistor and second transistor
US9859306B2 (en) 2009-02-20 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US9922692B2 (en) 2014-03-13 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including refresh circuit for memory cell
US9990965B2 (en) 2011-12-15 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Storage device
US10056494B2 (en) 2009-11-13 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2019012274A (en) * 2008-12-24 2019-01-24 株式会社半導体エネルギー研究所 Display device
US10236303B2 (en) 2008-09-12 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer
US10373983B2 (en) 2016-08-03 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10418466B2 (en) 2009-09-24 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10431672B1 (en) 2018-04-20 2019-10-01 International Business Machines Corporation Method of forming a III-V and Zn based finFET structure using low temperature deposition techniques
US10714503B2 (en) 2009-07-03 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US11152493B2 (en) 2009-07-10 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Families Citing this family (1843)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4108633B2 (en) * 2003-06-20 2008-06-25 シャープ株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JPWO2005064692A1 (en) * 2003-12-05 2007-07-26 松下電器産業株式会社 Compound semiconductor film, solar cell, and manufacturing method thereof
US7642573B2 (en) * 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
US7242039B2 (en) * 2004-03-12 2007-07-10 Hewlett-Packard Development Company, L.P. Semiconductor device
US7250627B2 (en) 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
US7208401B2 (en) * 2004-03-12 2007-04-24 Hewlett-Packard Development Company, L.P. Method for forming a thin film
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US8314420B2 (en) * 2004-03-12 2012-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device with multiple component oxide channel
US20070194379A1 (en) 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US20060003485A1 (en) * 2004-06-30 2006-01-05 Hoffman Randy L Devices and methods of making the same
US7427776B2 (en) * 2004-10-07 2008-09-23 Hewlett-Packard Development Company, L.P. Thin-film transistor and methods
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
KR100998527B1 (en) * 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 Amorphous oxide and field effect transistor
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
JP5118811B2 (en) * 2004-11-10 2013-01-16 キヤノン株式会社 Light emitting device and display device
KR100889796B1 (en) * 2004-11-10 2009-03-20 캐논 가부시끼가이샤 Field effect transistor employing an amorphous oxide
US7309895B2 (en) * 2005-01-25 2007-12-18 Hewlett-Packard Development Company, L.P. Semiconductor device
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (en) 2005-01-28 2015-10-21 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
JP2006245031A (en) * 2005-02-28 2006-09-14 Casio Comput Co Ltd Thin film transistor panel
JP5117667B2 (en) * 2005-02-28 2013-01-16 カシオ計算機株式会社 Thin film transistor panel
US20060220023A1 (en) * 2005-03-03 2006-10-05 Randy Hoffman Thin-film device
TWI475667B (en) * 2005-03-28 2015-03-01 Semiconductor Energy Lab Memory device and manufacturing method the same
US7541626B2 (en) * 2005-03-28 2009-06-02 Massachusetts Institute Of Technology High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US7928938B2 (en) * 2005-04-19 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit, display device and electronic apparatus
US7710739B2 (en) 2005-04-28 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8629819B2 (en) 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
EP1758072A3 (en) * 2005-08-24 2007-05-02 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
JP4870403B2 (en) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター Thin film transistor manufacturing method
JP2007073558A (en) * 2005-09-02 2007-03-22 Kochi Prefecture Sangyo Shinko Center Method of manufacturing thin-film transistor
JP4870404B2 (en) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター Thin film transistor manufacturing method
JP4280736B2 (en) 2005-09-06 2009-06-17 キヤノン株式会社 Semiconductor element
US7712009B2 (en) 2005-09-21 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Cyclic redundancy check circuit and semiconductor device having the cyclic redundancy check circuit
CN101278403B (en) 2005-10-14 2010-12-01 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
JP4560505B2 (en) * 2005-11-08 2010-10-13 キヤノン株式会社 Field effect transistor
JP5089139B2 (en) * 2005-11-15 2012-12-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5395994B2 (en) * 2005-11-18 2014-01-22 出光興産株式会社 Semiconductor thin film, manufacturing method thereof, and thin film transistor
US7314801B2 (en) * 2005-12-20 2008-01-01 Palo Alto Research Center Incorporated Semiconductor device having a surface conducting channel and method of forming
EP2924498A1 (en) 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
KR101206033B1 (en) * 2006-04-18 2012-11-28 삼성전자주식회사 Fabrication method of ZnO Thin Film and ZnO Transistor, and Thin Film Transistor adopting the same
KR101206034B1 (en) * 2006-05-19 2012-11-28 삼성전자주식회사 Nonvolatile memory device using oxygen-deficient metal oxide layer and the fabrication method
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
JP5216276B2 (en) * 2006-08-30 2013-06-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5164357B2 (en) * 2006-09-27 2013-03-21 キヤノン株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5116277B2 (en) * 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 Semiconductor device, display device, liquid crystal display device, display module, and electronic apparatus
KR100851553B1 (en) * 2006-10-02 2008-08-11 삼성전자주식회사 Image sensor and method of driving the same
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
US20100048298A1 (en) * 2006-11-09 2010-02-25 Wms Gaming Inc. Substantially transparent electrical components within a wagering game machine
JP5116290B2 (en) 2006-11-21 2013-01-09 キヤノン株式会社 Thin film transistor manufacturing method
JP4388544B2 (en) * 2006-12-19 2009-12-24 セイコーエプソン株式会社 Semiconductor device manufacturing method, electro-optical device, and electronic apparatus
US20080173877A1 (en) * 2007-01-09 2008-07-24 Kabushiki Kaisha Y.Y.L. Semiconductor apparatus
JP4934599B2 (en) * 2007-01-29 2012-05-16 キヤノン株式会社 Active matrix display device
JP4662075B2 (en) 2007-02-02 2011-03-30 株式会社ブリヂストン Thin film transistor and manufacturing method thereof
TWI478347B (en) * 2007-02-09 2015-03-21 Idemitsu Kosan Co A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
WO2008099863A1 (en) * 2007-02-16 2008-08-21 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, and complementary transistor circuit device
JP5196870B2 (en) * 2007-05-23 2013-05-15 キヤノン株式会社 Electronic device using oxide semiconductor and method for manufacturing the same
JP2008235871A (en) * 2007-02-20 2008-10-02 Canon Inc Method for forming thin film transistor and display unit
WO2008105347A1 (en) * 2007-02-20 2008-09-04 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
JP5121254B2 (en) * 2007-02-28 2013-01-16 キヤノン株式会社 Thin film transistor and display device
JP5244331B2 (en) 2007-03-26 2013-07-24 出光興産株式会社 Amorphous oxide semiconductor thin film, manufacturing method thereof, thin film transistor manufacturing method, field effect transistor, light emitting device, display device, and sputtering target
US8530891B2 (en) 2007-04-05 2013-09-10 Idemitsu Kosan Co., Ltd Field-effect transistor, and process for producing field-effect transistor
DE102007018431A1 (en) * 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenic zinc oxide containing composite of layers and field effect transistor having this composite
JP2009194351A (en) 2007-04-27 2009-08-27 Canon Inc Thin film transistor and its manufacturing method
JP5542297B2 (en) 2007-05-17 2014-07-09 株式会社半導体エネルギー研究所 Liquid crystal display device, display module, and electronic device
JP5294651B2 (en) * 2007-05-18 2013-09-18 キヤノン株式会社 Inverter manufacturing method and inverter
JP4989309B2 (en) 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 Liquid crystal display
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP5393058B2 (en) 2007-09-05 2014-01-22 キヤノン株式会社 Field effect transistor
JP2009130209A (en) * 2007-11-26 2009-06-11 Fujifilm Corp Radiation imaging device
JP2009146100A (en) * 2007-12-13 2009-07-02 Sony Corp Display device and light sensor element
NO332409B1 (en) * 2008-01-24 2012-09-17 Well Technology As Apparatus and method for isolating a section of a wellbore
JP5121478B2 (en) 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト Optical sensor element, imaging device, electronic device, and memory element
US8017045B2 (en) * 2008-04-16 2011-09-13 Electronics And Telecommunications Research Institute Composition for oxide semiconductor thin film and field effect transistor using the composition
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
US20100006837A1 (en) * 2008-07-09 2010-01-14 Electronics And Telecommunications Research Institute Composition for oxide semiconductor thin film, field effect transistor using the composition and method of fabricating the transistor
KR102040563B1 (en) 2008-07-10 2019-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and electronic device using the same
TWI500159B (en) 2008-07-31 2015-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9666719B2 (en) 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI450399B (en) 2008-07-31 2014-08-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI770659B (en) 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 Semiconductor device and method of manufacturing semiconductor device
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI508282B (en) 2008-08-08 2015-11-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI500160B (en) 2008-08-08 2015-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP5480554B2 (en) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 Semiconductor device
TWI642113B (en) 2008-08-08 2018-11-21 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
JP5525778B2 (en) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 Semiconductor device
US8039433B2 (en) * 2008-08-19 2011-10-18 Warsaw Orthopedic, Inc. Osteogenic compositions containing a coloring agent
TWI511299B (en) 2008-09-01 2015-12-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP5627071B2 (en) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
CN101350364B (en) * 2008-09-04 2011-07-20 复旦大学 Method for preparing nano zinc oxide field-effect transistor
CN102150191B (en) 2008-09-12 2013-07-24 株式会社半导体能源研究所 Display device
KR101545460B1 (en) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101623224B1 (en) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR102426826B1 (en) 2008-09-19 2022-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2010032638A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101507324B1 (en) 2008-09-19 2015-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101670695B1 (en) 2008-09-19 2016-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101681882B1 (en) 2008-09-19 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2010038599A1 (en) 2008-10-01 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2172977A1 (en) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101761108B1 (en) 2008-10-03 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20110069831A (en) * 2008-10-03 2011-06-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Modulation circuit and semiconductor device including the same
EP2172804B1 (en) 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
CN103928476A (en) 2008-10-03 2014-07-16 株式会社半导体能源研究所 Display Device And Method For Manufacturing The Same
CN101719493B (en) 2008-10-08 2014-05-14 株式会社半导体能源研究所 Display device
JP5484853B2 (en) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2010044478A1 (en) * 2008-10-16 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
JP5361651B2 (en) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5442234B2 (en) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 Semiconductor device and display device
JP5616012B2 (en) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101667909B1 (en) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR101259727B1 (en) 2008-10-24 2013-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101631454B1 (en) * 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit
TWI501401B (en) 2008-10-31 2015-09-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
WO2010050419A1 (en) 2008-10-31 2010-05-06 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and display device
KR101603303B1 (en) 2008-10-31 2016-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Conductive oxynitride and method for manufacturing conductive oxynitride film
CN101740631B (en) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the semiconductor device
JP2010135771A (en) * 2008-11-07 2010-06-17 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
TWI487104B (en) 2008-11-07 2015-06-01 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
CN103730509B (en) 2008-11-07 2018-03-30 株式会社半导体能源研究所 Semiconductor devices
EP2184783B1 (en) 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
TWI655780B (en) 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 Semiconductor device and method of manufacturing same
KR101432764B1 (en) 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
TWI656645B (en) 2008-11-13 2019-04-11 日商半導體能源研究所股份有限公司 Semiconductor device and method of manufacturing same
US8232947B2 (en) 2008-11-14 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
FR2938702B1 (en) * 2008-11-19 2011-03-04 Soitec Silicon On Insulator SURFACE PREPARATION OF SAPHIR SUBSTRATE FOR THE PRODUCTION OF HETEROSTRUCTURES
JP2010153802A (en) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd Semiconductor device and method of manufacturing the same
KR101291384B1 (en) 2008-11-21 2013-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101238823B1 (en) * 2008-11-21 2013-03-04 한국전자통신연구원 The thin film transistor and the manufacuring method thereof
TWI529949B (en) 2008-11-28 2016-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI585955B (en) 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 Photosensor and display device
TWI616707B (en) * 2008-11-28 2018-03-01 半導體能源研究所股份有限公司 Liquid crystal display device
KR101643204B1 (en) 2008-12-01 2016-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP5491833B2 (en) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 Semiconductor device
WO2010068619A1 (en) 2008-12-08 2010-06-17 The Trustees Of The University Of Pennsylvania Organic semiconductors capable of ambipolar transport
TW201023341A (en) * 2008-12-12 2010-06-16 Ind Tech Res Inst Integrated circuit structure
KR101751661B1 (en) 2008-12-19 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing transistor
JP5615540B2 (en) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101567336B1 (en) * 2008-12-22 2015-11-11 삼성디스플레이 주식회사 Display substrate andmethod of manufacturing the same
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI476915B (en) 2008-12-25 2015-03-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US8114720B2 (en) * 2008-12-25 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5590877B2 (en) * 2008-12-26 2014-09-17 株式会社半導体エネルギー研究所 Semiconductor device
TWI596676B (en) * 2008-12-26 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US20100163861A1 (en) * 2008-12-29 2010-07-01 Motorola, Inc. Method and apparatus for optically transparent transistor
KR101552975B1 (en) * 2009-01-09 2015-09-15 삼성전자주식회사 Oxide semiconductor and thin film transistor comprising the same
KR101648927B1 (en) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5606682B2 (en) * 2009-01-29 2014-10-15 富士フイルム株式会社 Thin film transistor, method for manufacturing polycrystalline oxide semiconductor thin film, and method for manufacturing thin film transistor
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
US8367486B2 (en) 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8749930B2 (en) * 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8278657B2 (en) 2009-02-13 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
CN101840936B (en) 2009-02-13 2014-10-08 株式会社半导体能源研究所 Semiconductor device including a transistor, and manufacturing method of the semiconductor device
US8247812B2 (en) * 2009-02-13 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461582B2 (en) * 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5504008B2 (en) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 Semiconductor device
CN102349158B (en) 2009-03-12 2015-05-06 株式会社半导体能源研究所 Method for manufacturing semiconductor device
TWI556323B (en) 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the semiconductor device
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101752640B1 (en) 2009-03-27 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI617029B (en) 2009-03-27 2018-03-01 半導體能源研究所股份有限公司 Semiconductor device
KR101681884B1 (en) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
US8927981B2 (en) * 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8338226B2 (en) 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI489628B (en) 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI476917B (en) 2009-04-16 2015-03-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
CN102422426B (en) * 2009-05-01 2016-06-01 株式会社半导体能源研究所 The manufacture method of semiconductor device
JP5751762B2 (en) 2009-05-21 2015-07-22 株式会社半導体エネルギー研究所 Semiconductor device
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
JP5564331B2 (en) 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20120031026A (en) 2009-06-30 2012-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP3236504A1 (en) 2009-06-30 2017-10-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101420025B1 (en) 2009-06-30 2014-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
US20110000175A1 (en) * 2009-07-01 2011-01-06 Husqvarna Consumer Outdoor Products N.A. Inc. Variable speed controller
JP5663214B2 (en) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101610606B1 (en) 2009-07-03 2016-04-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5018835B2 (en) * 2009-07-08 2012-09-05 株式会社ニコン Imaging device, optical apparatus, and manufacturing method of imaging device
KR102216028B1 (en) 2009-07-10 2021-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101791370B1 (en) 2009-07-10 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011007682A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011007675A1 (en) * 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011010545A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101870460B1 (en) 2009-07-18 2018-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011010541A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101414926B1 (en) 2009-07-18 2014-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011010542A1 (en) 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101904811B1 (en) 2009-07-24 2018-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102153841B1 (en) 2009-07-31 2020-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101799252B1 (en) 2009-07-31 2017-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR102386147B1 (en) 2009-07-31 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011013523A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011013502A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI634642B (en) 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP5663231B2 (en) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 Light emitting device
TWI604594B (en) * 2009-08-07 2017-11-01 半導體能源研究所股份有限公司 Semiconductor device and phone, watch, and display device comprising the same
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
TWI596741B (en) 2009-08-07 2017-08-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI529914B (en) 2009-08-07 2016-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP5642447B2 (en) 2009-08-07 2014-12-17 株式会社半導体エネルギー研究所 Semiconductor device
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027649A1 (en) * 2009-09-02 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101746198B1 (en) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
CN102598283B (en) * 2009-09-04 2016-05-18 株式会社半导体能源研究所 Semiconductor devices and manufacture method thereof
WO2011027664A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
JP5700626B2 (en) * 2009-09-04 2015-04-15 株式会社半導体エネルギー研究所 EL display device
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101791812B1 (en) * 2009-09-04 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR101988341B1 (en) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and method for manufacturing the same
KR20230165355A (en) 2009-09-16 2023-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR102009813B1 (en) 2009-09-16 2019-08-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device and manufacturing method thereof
CN105428424A (en) * 2009-09-16 2016-03-23 株式会社半导体能源研究所 Transistor and display device
US9715845B2 (en) 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011033914A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
WO2011034012A1 (en) 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
WO2011033909A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
KR20120071393A (en) 2009-09-24 2012-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011036981A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI512997B (en) * 2009-09-24 2015-12-11 Semiconductor Energy Lab Semiconductor device, power circuit, and manufacturing method of semiconductor device
KR102321565B1 (en) 2009-09-24 2021-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
WO2011037008A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
WO2011037010A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
WO2011036993A1 (en) 2009-09-24 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic appliance including the display device
KR101788538B1 (en) * 2009-09-24 2017-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
JP5613508B2 (en) * 2009-09-30 2014-10-22 株式会社半導体エネルギー研究所 Redox capacitor
KR101767035B1 (en) * 2009-10-01 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR20120084751A (en) 2009-10-05 2012-07-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
SG178056A1 (en) 2009-10-08 2012-03-29 Semiconductor Energy Lab Oxide semiconductor layer and semiconductor device
WO2011043203A1 (en) 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
WO2011043215A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device and driving method thereof
KR20120083341A (en) * 2009-10-09 2012-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the same
KR102142835B1 (en) 2009-10-09 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011043216A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including the same
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2486593B1 (en) 2009-10-09 2017-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011043195A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011043164A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
WO2011043162A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101790704B1 (en) 2009-10-09 2017-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Shift register and display device
KR101832698B1 (en) 2009-10-14 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
EP3244394A1 (en) 2009-10-16 2017-11-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic apparatus having the same
KR101717460B1 (en) 2009-10-16 2017-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the liquid crystal display device
KR20230135155A (en) 2009-10-16 2023-09-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101751908B1 (en) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Voltage regulator circuit
KR101582636B1 (en) 2009-10-21 2016-01-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including display device
KR20170130641A (en) 2009-10-21 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and electronic device including the same
KR102223581B1 (en) 2009-10-21 2021-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Analog circuit and semiconductor device
KR20130130879A (en) 2009-10-21 2013-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR20170024130A (en) 2009-10-21 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR102281043B1 (en) * 2009-10-29 2021-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102598247B (en) 2009-10-29 2015-05-06 株式会社半导体能源研究所 Semiconductor device
WO2011052413A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device, and electronic device
WO2011052411A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
WO2011052409A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101712340B1 (en) 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driver circuit, display device including the driver circuit, and electronic device including the display device
KR20120102653A (en) 2009-10-30 2012-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101293262B1 (en) 2009-10-30 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011052382A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101751712B1 (en) * 2009-10-30 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Voltage regulator circuit
WO2011052344A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic appliance including the same
EP2494599B1 (en) 2009-10-30 2020-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102687400B (en) 2009-10-30 2016-08-24 株式会社半导体能源研究所 Logic circuit and semiconductor device
WO2011052410A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101818265B1 (en) 2009-11-06 2018-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102066532B1 (en) 2009-11-06 2020-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5539846B2 (en) 2009-11-06 2014-07-02 株式会社半導体エネルギー研究所 Evaluation method, manufacturing method of semiconductor device
WO2011055638A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011055769A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
WO2011055625A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
WO2011055626A1 (en) 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104600074A (en) 2009-11-06 2015-05-06 株式会社半导体能源研究所 Semiconductor device
KR101747158B1 (en) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR102286284B1 (en) 2009-11-06 2021-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101849321B1 (en) 2009-11-06 2018-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20230173233A (en) 2009-11-13 2023-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
KR101975741B1 (en) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for packaging target material and method for mounting target
KR101738996B1 (en) * 2009-11-13 2017-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Device including nonvolatile memory element
WO2011058852A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011058865A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor devi ce
WO2011058882A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
WO2011062029A1 (en) 2009-11-18 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5762723B2 (en) 2009-11-20 2015-08-12 株式会社半導体エネルギー研究所 Modulation circuit and semiconductor device having the same
WO2011062042A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102026212B1 (en) 2009-11-20 2019-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101800854B1 (en) * 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101448908B1 (en) * 2009-11-20 2014-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101928723B1 (en) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011062057A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011062068A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101700154B1 (en) 2009-11-20 2017-01-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Latch circuit and circuit
WO2011065183A1 (en) * 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
CN103400857B (en) 2009-11-27 2016-12-28 株式会社半导体能源研究所 Semiconductor device and and manufacture method
KR20180059577A (en) * 2009-11-27 2018-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011065209A1 (en) * 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101911382B1 (en) * 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011065210A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR102089200B1 (en) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101825345B1 (en) 2009-11-28 2018-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR101803553B1 (en) 2009-11-28 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
EP2507787A4 (en) 2009-11-30 2013-07-17 Semiconductor Energy Lab Liquid crystal display device, method for driving the same, and electronic device including the same
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
JP5584103B2 (en) 2009-12-04 2014-09-03 株式会社半導体エネルギー研究所 Semiconductor device
EP2507822B1 (en) 2009-12-04 2016-08-31 Semiconductor Energy Laboratory Co. Ltd. Manufacturing method of semiconductor device
CN104795323B (en) 2009-12-04 2017-12-29 株式会社半导体能源研究所 Semiconductor device and its manufacture method
KR20120107107A (en) * 2009-12-04 2012-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20120103676A (en) * 2009-12-04 2012-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011068028A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
KR101840623B1 (en) * 2009-12-04 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
JP2011139052A (en) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd Semiconductor memory device
KR101501420B1 (en) 2009-12-04 2015-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011068032A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2011068066A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101833198B1 (en) 2009-12-04 2018-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
KR101511076B1 (en) 2009-12-08 2015-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101835300B1 (en) 2009-12-08 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20170061194A (en) 2009-12-10 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and driving method thereof
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR101804589B1 (en) 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20170116239A (en) 2009-12-11 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor
KR102046308B1 (en) 2009-12-11 2019-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5727204B2 (en) 2009-12-11 2015-06-03 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20110069454A (en) * 2009-12-17 2011-06-23 한국전자통신연구원 Thin film transistors and methods of forming the same
JP5185357B2 (en) 2009-12-17 2013-04-17 株式会社半導体エネルギー研究所 Semiconductor device
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9057758B2 (en) * 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
WO2011074407A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101729933B1 (en) 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Non-volatile latch circuit and logic circuit, and semiconductor device using the same
KR101763660B1 (en) 2009-12-18 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and driving method thereof
EP2513894B1 (en) 2009-12-18 2018-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR101887837B1 (en) 2009-12-18 2018-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device including optical sensor and driving method thereof
WO2011077908A1 (en) * 2009-12-23 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011077916A1 (en) 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20120101716A (en) 2009-12-24 2012-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
KR101301463B1 (en) 2009-12-25 2013-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011077925A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
KR101971851B1 (en) 2009-12-25 2019-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and electronic device
WO2011077978A1 (en) 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8441009B2 (en) * 2009-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101777624B1 (en) 2009-12-25 2017-09-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN105353551A (en) 2009-12-28 2016-02-24 株式会社半导体能源研究所 Liquid crystal display device and electronic device
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
CN109390215B (en) 2009-12-28 2023-08-15 株式会社半导体能源研究所 Method for manufacturing semiconductor device
KR102063214B1 (en) 2009-12-28 2020-01-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device and semiconductor device
KR101762316B1 (en) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101760537B1 (en) 2009-12-28 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101698537B1 (en) * 2010-01-15 2017-01-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102114011B1 (en) 2010-01-15 2020-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR101748763B1 (en) 2010-01-15 2017-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
KR101791279B1 (en) * 2010-01-15 2017-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102742003B (en) 2010-01-15 2015-01-28 株式会社半导体能源研究所 Semiconductor device
CN102714208B (en) * 2010-01-15 2015-05-20 株式会社半导体能源研究所 Semiconductor device
WO2011089832A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR102323314B1 (en) 2010-01-20 2021-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and mobile phone
KR101745749B1 (en) 2010-01-20 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN105761688B (en) 2010-01-20 2019-01-01 株式会社半导体能源研究所 The driving method of liquid crystal display
KR101787734B1 (en) * 2010-01-20 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
WO2011089848A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
KR101842860B1 (en) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving display device
KR102248998B1 (en) * 2010-01-20 2021-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Electronic device
KR101816505B1 (en) * 2010-01-20 2018-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display method of display device
US9984617B2 (en) 2010-01-20 2018-05-29 Semiconductor Energy Laboratory Co., Ltd. Display device including light emitting element
KR102364878B1 (en) * 2010-01-22 2022-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101773641B1 (en) 2010-01-22 2017-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101805378B1 (en) * 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
KR101873730B1 (en) 2010-01-24 2018-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011093150A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011093003A1 (en) 2010-01-29 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
CN102714001B (en) 2010-01-29 2015-11-25 株式会社半导体能源研究所 Semiconductor device and the electronic installation comprising semiconductor device
KR101819197B1 (en) 2010-02-05 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN105590964B (en) * 2010-02-05 2019-01-04 株式会社半导体能源研究所 Semiconductor device
WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
WO2011096262A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011096271A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
KR101791713B1 (en) 2010-02-05 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and semiconductor device
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011096153A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101810261B1 (en) 2010-02-10 2017-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102197415B1 (en) * 2010-02-12 2020-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and driving method
CN105336744B (en) 2010-02-12 2018-12-21 株式会社半导体能源研究所 Semiconductor device and its driving method
US8617920B2 (en) * 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101817054B1 (en) * 2010-02-12 2018-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device including the same
WO2011099376A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011099389A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
KR101830196B1 (en) 2010-02-12 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method thereof
KR101775180B1 (en) * 2010-02-12 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
WO2011099335A1 (en) 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20230145240A (en) 2010-02-18 2023-10-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101686089B1 (en) 2010-02-19 2016-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011102248A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR20180031075A (en) * 2010-02-19 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US8928644B2 (en) 2010-02-19 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving display device
KR101832119B1 (en) 2010-02-19 2018-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011102233A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101906151B1 (en) 2010-02-19 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and display device using the same
WO2011102190A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and rfid tag including the demodulation circuit
WO2011102228A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
JP5740169B2 (en) * 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 Method for manufacturing transistor
KR102015762B1 (en) * 2010-02-19 2019-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
KR20230054913A (en) 2010-02-23 2023-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
CN102770902B (en) * 2010-02-26 2016-11-23 株式会社半导体能源研究所 Display device and driving method thereof
KR20130009978A (en) * 2010-02-26 2013-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor element and deposition apparatus
WO2011105310A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20180001562A (en) * 2010-02-26 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9000438B2 (en) * 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101803552B1 (en) 2010-02-26 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and e-book reader provided therewith
KR102261505B1 (en) 2010-02-26 2021-06-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
KR102420689B1 (en) 2010-02-26 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN105245218B (en) 2010-03-02 2019-01-22 株式会社半导体能源研究所 Output of pulse signal circuit and shift register
WO2011108345A1 (en) 2010-03-02 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
DE112011106185B3 (en) 2010-03-02 2023-05-04 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
KR101817926B1 (en) 2010-03-02 2018-01-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Boosting circuit and rfid tag including boosting circuit
WO2011108346A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
KR20130008037A (en) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
KR102341927B1 (en) * 2010-03-05 2021-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
WO2011108374A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011111504A1 (en) 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
CN102792677B (en) 2010-03-08 2015-08-05 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
TWI594173B (en) * 2010-03-08 2017-08-01 半導體能源研究所股份有限公司 Electronic device and electronic system
WO2011111522A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011111490A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR20130007597A (en) 2010-03-08 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
WO2011111521A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device
KR101761558B1 (en) * 2010-03-12 2017-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving input circuit and method for driving input-output device
WO2011111506A1 (en) 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving circuit and method for driving display device
KR101769970B1 (en) 2010-03-12 2017-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8900362B2 (en) * 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
KR101823853B1 (en) * 2010-03-12 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
WO2011114868A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114867A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
JP5864875B2 (en) * 2010-03-22 2016-02-17 三星電子株式会社Samsung Electronics Co.,Ltd. THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SAME
WO2011118351A1 (en) * 2010-03-25 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5731244B2 (en) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101799757B1 (en) 2010-03-26 2017-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011118741A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101862539B1 (en) * 2010-03-26 2018-05-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011118510A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5708910B2 (en) 2010-03-30 2015-04-30 ソニー株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
WO2011122280A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
WO2011122312A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
WO2011122271A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Field-sequential display device
WO2011122514A1 (en) 2010-03-31 2011-10-06 Semiconductor Energy Laboratory Co., Ltd. Power supply device and driving method thereof
KR102196259B1 (en) 2010-04-02 2020-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
KR20130014562A (en) 2010-04-02 2013-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
PT105039A (en) 2010-04-06 2011-10-06 Univ Nova De Lisboa P-TYPE OXIDE ALLOYS BASED ON COPPER OXIDES, TANK OXIDES, COPPER TIN ALLOYS AND THEIR METAL LEAGUE, AND NICKEL OXIDE, WITH THE RESPECTIVE METALS EMBEDDED, THEIR MANUFACTURING AND USE PROCESS
KR101810592B1 (en) 2010-04-07 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor
KR101884031B1 (en) * 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
CN102834861B (en) 2010-04-09 2016-02-10 株式会社半导体能源研究所 The method of liquid crystal display and this liquid crystal display of driving
WO2011125456A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011125806A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130036739A (en) 2010-04-09 2013-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor memory device
KR101994909B1 (en) 2010-04-09 2019-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5744366B2 (en) 2010-04-12 2015-07-08 株式会社半導体エネルギー研究所 Liquid crystal display
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
WO2011129209A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Power source circuit
KR101904445B1 (en) * 2010-04-16 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP2011237418A (en) 2010-04-16 2011-11-24 Semiconductor Energy Lab Co Ltd Current measurement method, semiconductor device inspection method, semiconductor device and characteristic evaluation circuit
KR101881729B1 (en) 2010-04-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Deposition method and method for manufacturing semiconductor device
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN105390402B (en) 2010-04-23 2018-09-07 株式会社半导体能源研究所 The manufacturing method of semiconductor device and semiconductor device
DE112011106082B3 (en) 2010-04-23 2019-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor device
DE112011101396T5 (en) 2010-04-23 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method for the same
WO2011132591A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101877377B1 (en) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of semiconductor device
KR101826831B1 (en) 2010-04-23 2018-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR20180054919A (en) 2010-04-23 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
WO2011135987A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011136018A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101879570B1 (en) 2010-04-28 2018-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and manufacturing method the same
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
JP5797449B2 (en) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 Semiconductor device evaluation method
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101806271B1 (en) 2010-05-14 2017-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
WO2011142371A1 (en) 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5557595B2 (en) * 2010-05-14 2014-07-23 富士フイルム株式会社 Electronic device manufacturing method, thin film transistor, electro-optical device, and sensor
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145467A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145537A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR101872188B1 (en) 2010-05-21 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102906882B (en) 2010-05-21 2015-11-25 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
JP5852793B2 (en) 2010-05-21 2016-02-03 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011145707A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
WO2011145634A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011145538A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011145468A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
JP5714973B2 (en) 2010-05-21 2015-05-07 株式会社半導体エネルギー研究所 Semiconductor device
JP5766012B2 (en) 2010-05-21 2015-08-19 株式会社半導体エネルギー研究所 Liquid crystal display
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5749975B2 (en) 2010-05-28 2015-07-15 株式会社半導体エネルギー研究所 Photodetector and touch panel
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152286A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152233A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011152254A1 (en) 2010-06-04 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
WO2011155302A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102939659B (en) 2010-06-11 2016-08-17 株式会社半导体能源研究所 Semiconductor device and the manufacture method of semiconductor device
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
US9209314B2 (en) * 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5823740B2 (en) 2010-06-16 2015-11-25 株式会社半導体エネルギー研究所 I / O device
JP5797471B2 (en) 2010-06-16 2015-10-21 株式会社半導体エネルギー研究所 I / O device
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011158703A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011162147A1 (en) 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20120000499A (en) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Transistor and semiconductor device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
WO2011162104A1 (en) 2010-06-25 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
WO2012002236A1 (en) 2010-06-29 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5771079B2 (en) 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 Imaging device
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101350751B1 (en) 2010-07-01 2014-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Driving method of liquid crystal display device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI541782B (en) 2010-07-02 2016-07-11 半導體能源研究所股份有限公司 Liquid crystal display device
WO2012002471A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102959713B (en) 2010-07-02 2017-05-10 株式会社半导体能源研究所 Semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5792524B2 (en) 2010-07-02 2015-10-14 株式会社半導体エネルギー研究所 apparatus
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
WO2012002197A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2012008286A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008304A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008390A1 (en) 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
JP5735872B2 (en) 2010-07-27 2015-06-17 株式会社半導体エネルギー研究所 Semiconductor device
JP5836680B2 (en) 2010-07-27 2015-12-24 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
TWI565001B (en) 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving the same
JP5846789B2 (en) 2010-07-29 2016-01-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2012014786A1 (en) 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
JP5718072B2 (en) 2010-07-30 2015-05-13 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film transistor oxide for semiconductor layer and sputtering target, and thin film transistor
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
KR101842181B1 (en) 2010-08-04 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5739257B2 (en) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI524347B (en) * 2010-08-06 2016-03-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
TWI555128B (en) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and driving method thereof
US8467231B2 (en) * 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2012017844A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
JP5671418B2 (en) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP5743790B2 (en) 2010-08-06 2015-07-01 株式会社半導体エネルギー研究所 Semiconductor device
WO2012017843A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP5832181B2 (en) 2010-08-06 2015-12-16 株式会社半導体エネルギー研究所 Liquid crystal display
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI605549B (en) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device
JP5848912B2 (en) 2010-08-16 2016-01-27 株式会社半導体エネルギー研究所 Control circuit for liquid crystal display device, liquid crystal display device, and electronic apparatus including the liquid crystal display device
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI559409B (en) 2010-08-16 2016-11-21 半導體能源研究所股份有限公司 Manufacturing method of semiconductor device
TWI508294B (en) 2010-08-19 2015-11-11 Semiconductor Energy Lab Semiconductor device
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
JP2013009285A (en) 2010-08-26 2013-01-10 Semiconductor Energy Lab Co Ltd Signal processing circuit and method of driving the same
JP5727892B2 (en) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 Semiconductor device
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103081092B (en) 2010-08-27 2016-11-09 株式会社半导体能源研究所 Memory device and semiconductor devices
JP5674594B2 (en) 2010-08-27 2015-02-25 株式会社半導体エネルギー研究所 Semiconductor device and driving method of semiconductor device
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP5806043B2 (en) 2010-08-27 2015-11-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
US8592261B2 (en) 2010-08-27 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for designing semiconductor device
JP5763474B2 (en) 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 Optical sensor
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
KR20180105252A (en) 2010-09-03 2018-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Field effect transistor and method for manufacturing semiconductor device
WO2012029637A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2012029612A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
JP2012256819A (en) 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device
KR101824125B1 (en) 2010-09-10 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012079399A (en) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd Semiconductor device
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
KR20120026970A (en) 2010-09-10 2012-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and light-emitting device
TWI543166B (en) 2010-09-13 2016-07-21 半導體能源研究所股份有限公司 Semiconductor device
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
JP5827520B2 (en) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 Semiconductor memory device
KR101872926B1 (en) 2010-09-13 2018-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101932576B1 (en) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101952235B1 (en) 2010-09-13 2019-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5815337B2 (en) 2010-09-13 2015-11-17 株式会社半導体エネルギー研究所 Semiconductor device
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
TWI539453B (en) 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 Memory device and semiconductor device
JP2012256012A (en) 2010-09-15 2012-12-27 Semiconductor Energy Lab Co Ltd Display device
WO2012035975A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US9230994B2 (en) 2010-09-15 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
WO2012035984A1 (en) 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
KR101856722B1 (en) 2010-09-22 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power-insulated-gate field-effect transistor
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
TWI574259B (en) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 Semiconductor memory device and method for driving the same
TWI539456B (en) * 2010-10-05 2016-06-21 半導體能源研究所股份有限公司 Semiconductor memory device and driving method thereof
TWI556317B (en) 2010-10-07 2016-11-01 半導體能源研究所股份有限公司 Thin film element, semiconductor device, and method for manufacturing the same
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
KR101989392B1 (en) * 2010-10-20 2019-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving semiconductor deivce
TWI543158B (en) 2010-10-25 2016-07-21 半導體能源研究所股份有限公司 Semiconductor memory device and driving method thereof
JP5771505B2 (en) 2010-10-29 2015-09-02 株式会社半導体エネルギー研究所 Receiver circuit
WO2012057296A1 (en) 2010-10-29 2012-05-03 Semiconductor Energy Laboratory Co., Ltd. Storage device
KR101924231B1 (en) 2010-10-29 2018-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
EP2636674B1 (en) 2010-11-02 2016-04-06 Ube Industries, Ltd. (amide amino alkane) metal compound and method of producing metal-containing thin film using said metal compound
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI555205B (en) 2010-11-05 2016-10-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
WO2012060253A1 (en) 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
CN103201831B (en) 2010-11-05 2015-08-05 株式会社半导体能源研究所 Semiconductor device
JP6010291B2 (en) 2010-11-05 2016-10-19 株式会社半導体エネルギー研究所 Driving method of display device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
US8902637B2 (en) * 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
TWI535014B (en) 2010-11-11 2016-05-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI541981B (en) 2010-11-12 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device
JP5844618B2 (en) * 2010-11-19 2016-01-20 株式会社半導体エネルギー研究所 Semiconductor device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI590249B (en) 2010-12-03 2017-07-01 半導體能源研究所股份有限公司 Integrated circuit, method for driving the same, and semiconductor device
KR101763052B1 (en) 2010-12-03 2017-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5908263B2 (en) 2010-12-03 2016-04-26 株式会社半導体エネルギー研究所 DC-DC converter
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
TWI534905B (en) 2010-12-10 2016-05-21 半導體能源研究所股份有限公司 Display device and method for manufacturing the same
JP2012256020A (en) 2010-12-15 2012-12-27 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method for the same
US8686415B2 (en) * 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
JP5993141B2 (en) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 Storage device
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012090974A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5975635B2 (en) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
JP5852874B2 (en) 2010-12-28 2016-02-03 株式会社半導体エネルギー研究所 Semiconductor device
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012151453A (en) 2010-12-28 2012-08-09 Semiconductor Energy Lab Co Ltd Semiconductor device and driving method of the same
JP5864054B2 (en) 2010-12-28 2016-02-17 株式会社半導体エネルギー研究所 Semiconductor device
JP6030298B2 (en) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 Buffer storage device and signal processing circuit
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI621121B (en) 2011-01-05 2018-04-11 半導體能源研究所股份有限公司 Storage element, storage device, and signal processing circuit
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI570809B (en) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP5982125B2 (en) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR102026718B1 (en) 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device, semiconductor device, and detecting method
TWI619230B (en) 2011-01-14 2018-03-21 半導體能源研究所股份有限公司 Semiconductor memory device
JP5859839B2 (en) 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 Storage element driving method and storage element
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
JP5872912B2 (en) 2011-01-21 2016-03-01 株式会社半導体エネルギー研究所 Light emitting device
TWI570920B (en) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP5798933B2 (en) 2011-01-26 2015-10-21 株式会社半導体エネルギー研究所 Signal processing circuit
TWI602303B (en) 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
WO2012102182A1 (en) 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103348464B (en) 2011-01-26 2016-01-13 株式会社半导体能源研究所 Semiconductor device and manufacture method thereof
TWI657580B (en) 2011-01-26 2019-04-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI525619B (en) 2011-01-27 2016-03-11 半導體能源研究所股份有限公司 Memory circuit
KR20130140824A (en) 2011-01-27 2013-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2012102314A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
WO2012102281A1 (en) 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
TWI520273B (en) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 Semiconductor memory device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US9167234B2 (en) 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
KR101899880B1 (en) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable lsi
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9691772B2 (en) 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5898527B2 (en) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 Semiconductor device
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9646829B2 (en) 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
JP2012209543A (en) 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd Semiconductor device
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
TWI521612B (en) 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
TWI624878B (en) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 Method of manufacturing semiconductor device
JP5933300B2 (en) 2011-03-16 2016-06-08 株式会社半導体エネルギー研究所 Semiconductor device
KR101900525B1 (en) 2011-03-18 2018-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5839474B2 (en) 2011-03-24 2016-01-06 株式会社半導体エネルギー研究所 Signal processing circuit
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI565078B (en) 2011-03-25 2017-01-01 半導體能源研究所股份有限公司 Field-effect transistor, and memory and semiconductor circuit including the same
TWI545652B (en) 2011-03-25 2016-08-11 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6053098B2 (en) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 Semiconductor device
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
TWI567735B (en) 2011-03-31 2017-01-21 半導體能源研究所股份有限公司 Memory circuit, memory unit, and signal processing circuit
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
JP5982147B2 (en) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 Light emitting device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9960278B2 (en) 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
TWI567736B (en) 2011-04-08 2017-01-21 半導體能源研究所股份有限公司 Memory element and signal processing circuit
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP5883699B2 (en) 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 Programmable LSI
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
JP6045176B2 (en) * 2011-04-15 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6001900B2 (en) 2011-04-21 2016-10-05 株式会社半導体エネルギー研究所 Signal processing circuit
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI548057B (en) 2011-04-22 2016-09-01 半導體能源研究所股份有限公司 Semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10079053B2 (en) 2011-04-22 2018-09-18 Semiconductor Energy Laboratory Co., Ltd. Memory element and memory device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN102760697B (en) 2011-04-27 2016-08-03 株式会社半导体能源研究所 The manufacture method of semiconductor device
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101919056B1 (en) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor circuit
US9935622B2 (en) 2011-04-28 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Comparator and semiconductor device including comparator
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
TWI525615B (en) 2011-04-29 2016-03-11 半導體能源研究所股份有限公司 Semiconductor storage device
US9614094B2 (en) 2011-04-29 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer and method for driving the same
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI639237B (en) 2011-05-05 2018-10-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012153473A1 (en) 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101874144B1 (en) 2011-05-06 2018-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor memory device
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
TWI568181B (en) 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 Logic circuit and semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
TWI541978B (en) 2011-05-11 2016-07-11 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI557711B (en) 2011-05-12 2016-11-11 半導體能源研究所股份有限公司 Method for driving display device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
TWI536502B (en) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 Memory circuit and electronic device
WO2012157472A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5886128B2 (en) 2011-05-13 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
CN103548263B (en) 2011-05-13 2016-12-07 株式会社半导体能源研究所 Semiconductor device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9954110B2 (en) 2011-05-13 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
JP6110075B2 (en) 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Display device
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
WO2012157463A1 (en) 2011-05-13 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012157532A1 (en) 2011-05-16 2012-11-22 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI570891B (en) 2011-05-17 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device
TWI571058B (en) 2011-05-18 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device and method of driving semiconductor device
TWI552150B (en) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 Semiconductor storage device
KR102093909B1 (en) 2011-05-19 2020-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Circuit and method of driving the same
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101991735B1 (en) 2011-05-19 2019-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor integrated circuit
KR102081792B1 (en) 2011-05-19 2020-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Arithmetic circuit and method of driving the same
JP6006975B2 (en) 2011-05-19 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
JP6014362B2 (en) 2011-05-19 2016-10-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6013680B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6013682B2 (en) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 Driving method of semiconductor device
TWI557739B (en) 2011-05-20 2016-11-11 半導體能源研究所股份有限公司 Semiconductor integrated circuit
JP5951351B2 (en) 2011-05-20 2016-07-13 株式会社半導体エネルギー研究所 Adder and full adder
TWI559683B (en) 2011-05-20 2016-11-21 半導體能源研究所股份有限公司 Semiconductor integrated circuit
TWI570730B (en) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 Semiconductor device
KR101922397B1 (en) 2011-05-20 2018-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6030334B2 (en) 2011-05-20 2016-11-24 株式会社半導体エネルギー研究所 Storage device
JP5820335B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
TWI501226B (en) 2011-05-20 2015-09-21 Semiconductor Energy Lab Memory device and method for driving memory device
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
JP6082189B2 (en) 2011-05-20 2017-02-15 株式会社半導体エネルギー研究所 Storage device and signal processing circuit
TWI614995B (en) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 Phase locked loop and semiconductor device using the same
JP5892852B2 (en) 2011-05-20 2016-03-23 株式会社半導体エネルギー研究所 Programmable logic device
TWI570719B (en) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 Memory device and signal processing circuit
WO2012161059A1 (en) 2011-05-20 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP5936908B2 (en) 2011-05-20 2016-06-22 株式会社半導体エネルギー研究所 Parity bit output circuit and parity check circuit
JP5947099B2 (en) 2011-05-20 2016-07-06 株式会社半導体エネルギー研究所 Semiconductor device
JP5886496B2 (en) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 Semiconductor device
JP5820336B2 (en) 2011-05-20 2015-11-24 株式会社半導体エネルギー研究所 Semiconductor device
JP6091083B2 (en) 2011-05-20 2017-03-08 株式会社半導体エネルギー研究所 Storage device
JP5319816B2 (en) * 2011-05-21 2013-10-16 双葉電子工業株式会社 Thin film semiconductor device and display device using thin film semiconductor device
US20120298998A1 (en) 2011-05-25 2012-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
KR101912971B1 (en) 2011-05-26 2018-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Divider circuit and semiconductor device using the same
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
JP5912844B2 (en) 2011-05-31 2016-04-27 株式会社半導体エネルギー研究所 Programmable logic device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
JP5890251B2 (en) 2011-06-08 2016-03-22 株式会社半導体エネルギー研究所 Communication method
DE112012007295B3 (en) 2011-06-08 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a sputtering target and method of manufacturing a semiconductor device
JP2013016243A (en) 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd Memory device
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6009226B2 (en) 2011-06-10 2016-10-19 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6104522B2 (en) 2011-06-10 2017-03-29 株式会社半導体エネルギー研究所 Semiconductor device
JP6005401B2 (en) 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI557910B (en) 2011-06-16 2016-11-11 半導體能源研究所股份有限公司 Semiconductor device and a method for manufacturing the same
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
KR20130007426A (en) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
WO2012172746A1 (en) 2011-06-17 2012-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102014876B1 (en) 2011-07-08 2019-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI565067B (en) 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
JP2013042117A (en) 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013685B2 (en) 2011-07-22 2016-10-25 株式会社半導体エネルギー研究所 Semiconductor device
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
KR20140051268A (en) 2011-07-22 2014-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6006572B2 (en) 2011-08-18 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device
JP6128775B2 (en) 2011-08-19 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
TWI575494B (en) 2011-08-19 2017-03-21 半導體能源研究所股份有限公司 Method for driving semiconductor device
JP6116149B2 (en) 2011-08-24 2017-04-19 株式会社半導体エネルギー研究所 Semiconductor device
TWI659523B (en) 2011-08-29 2019-05-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP6016532B2 (en) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 Semiconductor device
JP6050054B2 (en) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
JP5825744B2 (en) 2011-09-15 2015-12-02 株式会社半導体エネルギー研究所 Power insulated gate field effect transistor
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013039126A1 (en) 2011-09-16 2013-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5832399B2 (en) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 Light emitting device
CN103022012B (en) 2011-09-21 2017-03-01 株式会社半导体能源研究所 Semiconductor storage
WO2013042562A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101891650B1 (en) 2011-09-22 2018-08-27 삼성디스플레이 주식회사 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME AND THIN FILM TRANSISTOR array PANEL INCLUDING THE SAME
WO2013042643A1 (en) 2011-09-22 2013-03-28 Semiconductor Energy Laboratory Co., Ltd. Photodetector and method for driving photodetector
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
KR102108572B1 (en) 2011-09-26 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2013084333A (en) 2011-09-28 2013-05-09 Semiconductor Energy Lab Co Ltd Shift register circuit
TWI605590B (en) 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR101506303B1 (en) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN105702741B (en) 2011-09-29 2019-01-01 株式会社半导体能源研究所 Semiconductor devices
KR102128369B1 (en) 2011-09-29 2020-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
JP5806905B2 (en) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 Semiconductor device
US20130087784A1 (en) 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6022880B2 (en) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP2013093561A (en) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Oxide semiconductor film and semiconductor device
JP2013093565A (en) 2011-10-07 2013-05-16 Semiconductor Energy Lab Co Ltd Semiconductor device
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
JP5912394B2 (en) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 Semiconductor device
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP6026839B2 (en) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 Semiconductor device
SG10201601757UA (en) 2011-10-14 2016-04-28 Semiconductor Energy Lab Semiconductor device
KR20130040706A (en) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method of manufacturing semiconductor device
KR20130043063A (en) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
TWI567985B (en) 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP6226518B2 (en) 2011-10-24 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6045285B2 (en) 2011-10-24 2016-12-14 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR101976212B1 (en) 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP6082562B2 (en) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20130046357A (en) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR20140086954A (en) 2011-10-28 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR20130049620A (en) 2011-11-04 2013-05-14 삼성디스플레이 주식회사 Display device
KR102012981B1 (en) 2011-11-09 2019-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP5933895B2 (en) 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP6076038B2 (en) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 Method for manufacturing display device
JP6122275B2 (en) 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 Display device
US9082861B2 (en) 2011-11-11 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor with oxide semiconductor channel having protective layer
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2013069548A1 (en) 2011-11-11 2013-05-16 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and liquid crystal display device
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
KR20130055521A (en) 2011-11-18 2013-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor element, method for manufacturing semiconductor element, and semiconductor device including semiconductor element
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
JP6125211B2 (en) 2011-11-25 2017-05-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
JP6099368B2 (en) 2011-11-25 2017-03-22 株式会社半導体エネルギー研究所 Storage device
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6059968B2 (en) 2011-11-25 2017-01-11 株式会社半導体エネルギー研究所 Semiconductor device and liquid crystal display device
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US20130137232A1 (en) 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
KR102072244B1 (en) 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI556319B (en) 2011-11-30 2016-11-01 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
JP6147992B2 (en) 2011-11-30 2017-06-14 株式会社半導体エネルギー研究所 Semiconductor device
TWI639150B (en) 2011-11-30 2018-10-21 日商半導體能源研究所股份有限公司 Semiconductor display device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI621183B (en) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
WO2013080900A1 (en) 2011-12-02 2013-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6050662B2 (en) 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP2013137853A (en) 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd Storage device and driving method thereof
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2013089115A1 (en) 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013149953A (en) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2013130802A (en) 2011-12-22 2013-07-04 Semiconductor Energy Lab Co Ltd Semiconductor device, image display device, storage device, and electronic apparatus
TWI569446B (en) 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
WO2013094547A1 (en) 2011-12-23 2013-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6033071B2 (en) 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 Semiconductor device
TWI580189B (en) 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 Level-shift circuit and semiconductor integrated circuit
JP6053490B2 (en) 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6012450B2 (en) 2011-12-23 2016-10-25 株式会社半導体エネルギー研究所 Driving method of semiconductor device
TWI613824B (en) 2011-12-23 2018-02-01 半導體能源研究所股份有限公司 Semiconductor device
WO2013099537A1 (en) 2011-12-26 2013-07-04 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
KR102100425B1 (en) 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI584383B (en) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
KR102103913B1 (en) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013168926A (en) 2012-01-18 2013-08-29 Semiconductor Energy Lab Co Ltd Circuit, sensor circuit, and semiconductor device using the sensor circuit
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9653614B2 (en) 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102433736B1 (en) 2012-01-23 2022-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102083380B1 (en) 2012-01-25 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6091905B2 (en) 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
TWI642193B (en) 2012-01-26 2018-11-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI561951B (en) 2012-01-30 2016-12-11 Semiconductor Energy Lab Co Ltd Power supply circuit
TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102101167B1 (en) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9859114B2 (en) 2012-02-08 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device with an oxygen-controlling insulating layer
JP6125850B2 (en) 2012-02-09 2017-05-10 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5981157B2 (en) 2012-02-09 2016-08-31 株式会社半導体エネルギー研究所 Semiconductor device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
JP2014063557A (en) 2012-02-24 2014-04-10 Semiconductor Energy Lab Co Ltd Storage element and semiconductor element
US20130221345A1 (en) 2012-02-28 2013-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6220526B2 (en) 2012-02-29 2017-10-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6151530B2 (en) 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 Image sensor, camera, and surveillance system
JP6046514B2 (en) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP2013183001A (en) 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd Semiconductor device
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
JP6100559B2 (en) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 Semiconductor memory device
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013133143A1 (en) 2012-03-09 2013-09-12 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
CN104170001B (en) 2012-03-13 2017-03-01 株式会社半导体能源研究所 Light-emitting device and its driving method
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
KR102108248B1 (en) 2012-03-14 2020-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film, transistor, and semiconductor device
JP6168795B2 (en) 2012-03-14 2017-07-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
JP6169376B2 (en) 2012-03-28 2017-07-26 株式会社半導体エネルギー研究所 Battery management unit, protection circuit, power storage device
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
US9786793B2 (en) 2012-03-29 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer including regions with different concentrations of resistance-reducing elements
JP6139187B2 (en) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 Semiconductor device
JP2013229013A (en) 2012-03-29 2013-11-07 Semiconductor Energy Lab Co Ltd Array controller and storage system
KR102044725B1 (en) 2012-03-29 2019-11-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Power supply control device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
KR20130111874A (en) 2012-04-02 2013-10-11 삼성디스플레이 주식회사 Thin film transistor, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US9793444B2 (en) 2012-04-06 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9711110B2 (en) 2012-04-06 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Display device comprising grayscale conversion portion and display portion
JP2013232885A (en) 2012-04-06 2013-11-14 Semiconductor Energy Lab Co Ltd Semiconductor relay
JP5975907B2 (en) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 Semiconductor device
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
JP2013236068A (en) 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method therefor
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
JP6059566B2 (en) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20150005949A (en) 2012-04-13 2015-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6128906B2 (en) 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 Semiconductor device
JP6143423B2 (en) 2012-04-16 2017-06-07 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
JP6001308B2 (en) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 Semiconductor device
JP6076612B2 (en) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 Semiconductor device
CN102623508B (en) * 2012-04-17 2014-03-26 北京大学 Graphene field effect transistor and preparation method thereof
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP6199583B2 (en) 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 Semiconductor device
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6228381B2 (en) 2012-04-30 2017-11-08 株式会社半導体エネルギー研究所 Semiconductor device
JP6100071B2 (en) 2012-04-30 2017-03-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9703704B2 (en) 2012-05-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
JP6035195B2 (en) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
DE112013002281T5 (en) 2012-05-02 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9261943B2 (en) 2012-05-02 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6100076B2 (en) 2012-05-02 2017-03-22 株式会社半導体エネルギー研究所 Processor
JP6227890B2 (en) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 Signal processing circuit and control circuit
JP6243136B2 (en) 2012-05-02 2017-12-06 株式会社半導体エネルギー研究所 Switching converter
KR102025722B1 (en) 2012-05-02 2019-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Temperature sensor circuit and semiconductor device including temperature sensor circuit
KR20130125717A (en) 2012-05-09 2013-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for driving the same
KR102380379B1 (en) 2012-05-10 2022-04-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN104285302B (en) 2012-05-10 2017-08-22 株式会社半导体能源研究所 Semiconductor device
KR102069158B1 (en) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
KR102087443B1 (en) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and driving method of semiconductor device
DE102013207324A1 (en) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
KR20130129674A (en) 2012-05-21 2013-11-29 삼성디스플레이 주식회사 Thin film transistor and thin film transistor array panel including the same
US9817032B2 (en) 2012-05-23 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measurement device
JP6250955B2 (en) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP2014003594A (en) 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd Semiconductor device and method of driving the same
JP6050721B2 (en) 2012-05-25 2016-12-21 株式会社半導体エネルギー研究所 Semiconductor device
KR102164990B1 (en) 2012-05-25 2020-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving memory element
WO2013176199A1 (en) 2012-05-25 2013-11-28 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
JP6377317B2 (en) 2012-05-30 2018-08-22 株式会社半導体エネルギー研究所 Programmable logic device
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102119914B1 (en) 2012-05-31 2020-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
KR102316107B1 (en) 2012-05-31 2021-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6158588B2 (en) 2012-05-31 2017-07-05 株式会社半導体エネルギー研究所 Light emitting device
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
WO2013180016A1 (en) 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and alarm device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
US9916793B2 (en) 2012-06-01 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102082794B1 (en) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of driving display device, and display device
KR102315695B1 (en) 2012-06-29 2021-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102099445B1 (en) 2012-06-29 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
KR102161077B1 (en) 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
JP6310194B2 (en) 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 Semiconductor device
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102099262B1 (en) 2012-07-11 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device and method for driving the same
JP2014032399A (en) 2012-07-13 2014-02-20 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP6006558B2 (en) 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
KR102505680B1 (en) 2012-07-20 2023-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the display device
CN104508548B (en) 2012-07-20 2017-11-07 株式会社半导体能源研究所 Display device
KR102343715B1 (en) 2012-07-20 2021-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing semiconductor device
JP6185311B2 (en) 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 Power supply control circuit and signal processing circuit
KR102004398B1 (en) 2012-07-24 2019-07-29 삼성디스플레이 주식회사 Display device and method of manufacturing the same
JP2014042004A (en) 2012-07-26 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
KR20140013931A (en) 2012-07-26 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device
JP6224931B2 (en) 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
JP2014045175A (en) 2012-08-02 2014-03-13 Semiconductor Energy Lab Co Ltd Semiconductor device
JP6134598B2 (en) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 Semiconductor device
CN104508549B (en) 2012-08-03 2018-02-06 株式会社半导体能源研究所 Semiconductor device
KR102243843B1 (en) 2012-08-03 2021-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor stacked film and semiconductor device
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
US10557192B2 (en) 2012-08-07 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for using sputtering target and method for forming oxide film
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102171650B1 (en) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2014057298A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
CN108305895B (en) 2012-08-10 2021-08-03 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
JP6220597B2 (en) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
JP2014199899A (en) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 Semiconductor device
TWI581404B (en) 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 Semiconductor device and method for driving semiconductor device
JP2014057296A (en) 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device driving method
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
KR102069683B1 (en) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Radiation detection panel, radiation imaging device, and diagnostic imaging device
US9625764B2 (en) 2012-08-28 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR102161078B1 (en) 2012-08-28 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and manufacturing method thereof
DE102013216824A1 (en) 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20140029202A (en) 2012-08-28 2014-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
TWI611511B (en) 2012-08-31 2018-01-11 半導體能源研究所股份有限公司 Semiconductor device
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2014034820A1 (en) 2012-09-03 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Microcontroller
DE102013217278B4 (en) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. A photodetector circuit, an imaging device, and a method of driving a photodetector circuit
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
KR102331652B1 (en) 2012-09-13 2021-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
TWI761605B (en) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 Semiconductor device and method for fabricating the same
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI821777B (en) 2012-09-24 2023-11-11 日商半導體能源研究所股份有限公司 Semiconductor device
WO2014046222A1 (en) 2012-09-24 2014-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device
JP6351947B2 (en) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
TWI681233B (en) 2012-10-12 2020-01-01 日商半導體能源研究所股份有限公司 Liquid crystal display device, touch panel and method for manufacturing liquid crystal display device
JP6290576B2 (en) 2012-10-12 2018-03-07 株式会社半導体エネルギー研究所 Liquid crystal display device and driving method thereof
KR102226090B1 (en) 2012-10-12 2021-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
WO2014061535A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5951442B2 (en) 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 Semiconductor device
DE112013005029T5 (en) 2012-10-17 2015-07-30 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and manufacturing process for it
JP6021586B2 (en) 2012-10-17 2016-11-09 株式会社半導体エネルギー研究所 Semiconductor device
WO2014061762A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014061567A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
JP6283191B2 (en) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
JP6059501B2 (en) 2012-10-17 2017-01-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI591966B (en) 2012-10-17 2017-07-11 半導體能源研究所股份有限公司 Programmable logic device and method for driving programmable logic device
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014082388A (en) 2012-10-17 2014-05-08 Semiconductor Energy Lab Co Ltd Semiconductor device
KR102220279B1 (en) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
JP6204145B2 (en) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 Semiconductor device
WO2014065343A1 (en) 2012-10-24 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102279459B1 (en) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI637517B (en) 2012-10-24 2018-10-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
JP6300489B2 (en) 2012-10-24 2018-03-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR102130184B1 (en) 2012-10-24 2020-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
CN102931091A (en) * 2012-10-25 2013-02-13 深圳市华星光电技术有限公司 Driving matrix type flat panel display device, thin film transistor and manufacturing method of driving matrix type flat panel display device and thin film transistor
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
JP6219562B2 (en) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 Display device and electronic device
TWI618075B (en) 2012-11-06 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device and driving method thereof
DE112013005331T5 (en) 2012-11-08 2015-11-19 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method of forming a metal oxide film
TWI608616B (en) 2012-11-15 2017-12-11 半導體能源研究所股份有限公司 Semiconductor device
TWI605593B (en) 2012-11-15 2017-11-11 半導體能源研究所股份有限公司 Semiconductor device
JP6220641B2 (en) 2012-11-15 2017-10-25 株式会社半導体エネルギー研究所 Semiconductor device
TWI661553B (en) 2012-11-16 2019-06-01 日商半導體能源研究所股份有限公司 Semiconductor device
TWI620323B (en) 2012-11-16 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
JP6317059B2 (en) 2012-11-16 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device and display device
JP6285150B2 (en) 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 Semiconductor device
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
TWI627483B (en) 2012-11-28 2018-06-21 半導體能源研究所股份有限公司 Display device and television receiver
WO2014084153A1 (en) 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI613759B (en) 2012-11-28 2018-02-01 半導體能源研究所股份有限公司 Display device
JP2014130336A (en) 2012-11-30 2014-07-10 Semiconductor Energy Lab Co Ltd Display device
US9594281B2 (en) 2012-11-30 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102526635B1 (en) 2012-11-30 2023-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
TWI624949B (en) 2012-11-30 2018-05-21 半導體能源研究所股份有限公司 Semiconductor device
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2014135478A (en) 2012-12-03 2014-07-24 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
KR102207028B1 (en) 2012-12-03 2021-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102112364B1 (en) 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9577446B2 (en) 2012-12-13 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Power storage system and power storage device storing data for the identifying power storage device
TWI611419B (en) 2012-12-24 2018-01-11 半導體能源研究所股份有限公司 Programmable logic device and semiconductor device
DE112013006214T5 (en) 2012-12-25 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112013006219T5 (en) 2012-12-25 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US9905585B2 (en) 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
KR102241249B1 (en) 2012-12-25 2021-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Resistor, display device, and electronic device
WO2014104267A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (en) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacturing method of the same
TWI607510B (en) 2012-12-28 2017-12-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method of the same
WO2014104265A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6329762B2 (en) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (en) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
JP6223198B2 (en) 2013-01-24 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device
TWI619010B (en) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 Semiconductor device
JP5807076B2 (en) 2013-01-24 2015-11-10 株式会社半導体エネルギー研究所 Semiconductor device
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102112367B1 (en) 2013-02-12 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI618252B (en) 2013-02-12 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102125593B1 (en) 2013-02-13 2020-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Programmable logic device and semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI611566B (en) 2013-02-25 2018-01-11 半導體能源研究所股份有限公司 Display device and electronic device
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI651839B (en) 2013-02-27 2019-02-21 半導體能源研究所股份有限公司 Semiconductor device, drive circuit and display device
TWI612321B (en) 2013-02-27 2018-01-21 半導體能源研究所股份有限公司 Imaging device
JP6141777B2 (en) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR102238682B1 (en) 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
JP2014195241A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2014195243A (en) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd Semiconductor device
US9276125B2 (en) 2013-03-01 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2014195060A (en) 2013-03-01 2014-10-09 Semiconductor Energy Lab Co Ltd Sensor circuit and semiconductor device using sensor circuit
KR102153110B1 (en) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor film and semiconductor device
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
TWI644433B (en) 2013-03-13 2018-12-11 半導體能源研究所股份有限公司 Semiconductor device
JP6298662B2 (en) 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102290247B1 (en) 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
JP2014199708A (en) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 Method for driving semiconductor device
WO2014142043A1 (en) 2013-03-14 2014-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
JP6283237B2 (en) 2013-03-14 2018-02-21 株式会社半導体エネルギー研究所 Semiconductor device
JP2014199709A (en) 2013-03-14 2014-10-23 株式会社半導体エネルギー研究所 Memory device and semiconductor device
TWI677193B (en) 2013-03-15 2019-11-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9786350B2 (en) 2013-03-18 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
JP6355374B2 (en) 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6093726B2 (en) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 Semiconductor device
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014157019A1 (en) 2013-03-25 2014-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6272713B2 (en) 2013-03-25 2018-01-31 株式会社半導体エネルギー研究所 Programmable logic device and semiconductor device
US10347769B2 (en) 2013-03-25 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multi-layer source/drain electrodes
JP6316630B2 (en) 2013-03-26 2018-04-25 株式会社半導体エネルギー研究所 Semiconductor device
JP6376788B2 (en) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP6395409B2 (en) 2013-03-27 2018-09-26 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JP2014209209A (en) 2013-03-28 2014-11-06 株式会社半導体エネルギー研究所 Display device
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
JP6300589B2 (en) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
JP6198434B2 (en) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 Display device and electronic device
JP6224338B2 (en) 2013-04-11 2017-11-01 株式会社半導体エネルギー研究所 Semiconductor device, display device, and method for manufacturing semiconductor device
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
TWI620324B (en) 2013-04-12 2018-04-01 半導體能源研究所股份有限公司 Semiconductor device
JP6280794B2 (en) 2013-04-12 2018-02-14 株式会社半導体エネルギー研究所 Semiconductor device and driving method thereof
US9915848B2 (en) 2013-04-19 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6333028B2 (en) 2013-04-19 2018-05-30 株式会社半導体エネルギー研究所 Memory device and semiconductor device
JP6456598B2 (en) 2013-04-19 2019-01-23 株式会社半導体エネルギー研究所 Display device
TWI647559B (en) 2013-04-24 2019-01-11 日商半導體能源研究所股份有限公司 Display device
US9893192B2 (en) 2013-04-24 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6401483B2 (en) 2013-04-26 2018-10-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP6396671B2 (en) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 Semiconductor device
TWI644434B (en) 2013-04-29 2018-12-11 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
TWI631711B (en) 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 Semiconductor device
KR102222344B1 (en) 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9882058B2 (en) 2013-05-03 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105190902B (en) 2013-05-09 2019-01-29 株式会社半导体能源研究所 Semiconductor device and its manufacturing method
US9704894B2 (en) 2013-05-10 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel electrode including oxide
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
TWI621337B (en) 2013-05-14 2018-04-11 半導體能源研究所股份有限公司 Signal processing device
TWI639235B (en) 2013-05-16 2018-10-21 半導體能源研究所股份有限公司 Semiconductor device
TWI618058B (en) 2013-05-16 2018-03-11 半導體能源研究所股份有限公司 Semiconductor device
TWI669824B (en) 2013-05-16 2019-08-21 日商半導體能源研究所股份有限公司 Semiconductor device
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6298353B2 (en) 2013-05-17 2018-03-20 株式会社半導体エネルギー研究所 Semiconductor device
TWI638519B (en) 2013-05-17 2018-10-11 半導體能源研究所股份有限公司 Programmable logic device and semiconductor device
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
US9754971B2 (en) 2013-05-18 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014188982A1 (en) 2013-05-20 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
SG10201601511RA (en) 2013-05-20 2016-03-30 Semiconductor Energy Lab Semiconductor device
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9647125B2 (en) 2013-05-20 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI664731B (en) 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 Semiconductor device
DE102014208859B4 (en) 2013-05-20 2021-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014188983A1 (en) 2013-05-21 2014-11-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and formation method thereof
US10416504B2 (en) 2013-05-21 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP6475424B2 (en) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 Semiconductor device
JP2015195327A (en) 2013-06-05 2015-11-05 株式会社半導体エネルギー研究所 semiconductor device
US9806198B2 (en) 2013-06-05 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI624936B (en) 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 Display device
JP6400336B2 (en) 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 Semiconductor device
TWI649606B (en) 2013-06-05 2019-02-01 日商半導體能源研究所股份有限公司 Display device and electronic device
US9773915B2 (en) 2013-06-11 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102282108B1 (en) 2013-06-13 2021-07-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6368155B2 (en) 2013-06-18 2018-08-01 株式会社半導体エネルギー研究所 Programmable logic device
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI652822B (en) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 Oxide semiconductor film and formation method thereof
TWI633650B (en) 2013-06-21 2018-08-21 半導體能源研究所股份有限公司 Semiconductor device
JP6357363B2 (en) 2013-06-26 2018-07-11 株式会社半導体エネルギー研究所 Storage device
KR102269460B1 (en) 2013-06-27 2021-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TW201513128A (en) 2013-07-05 2015-04-01 Semiconductor Energy Lab Semiconductor device
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP6435124B2 (en) 2013-07-08 2018-12-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9666697B2 (en) 2013-07-08 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device including an electron trap layer
TWI654614B (en) 2013-07-10 2019-03-21 日商半導體能源研究所股份有限公司 Semiconductor device
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9818763B2 (en) 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6322503B2 (en) 2013-07-16 2018-05-09 株式会社半導体エネルギー研究所 Semiconductor device
JP6516978B2 (en) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 Semiconductor device
US9443592B2 (en) 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
TWI608523B (en) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
TWI636309B (en) 2013-07-25 2018-09-21 日商半導體能源研究所股份有限公司 Liquid crystal display device and electronic device
US10529740B2 (en) 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
TWI632688B (en) 2013-07-25 2018-08-11 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing semiconductor device
TWI641208B (en) 2013-07-26 2018-11-11 日商半導體能源研究所股份有限公司 Dcdc converter
JP6410496B2 (en) 2013-07-31 2018-10-24 株式会社半導体エネルギー研究所 Multi-gate transistor
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6460592B2 (en) 2013-07-31 2019-01-30 株式会社半導体エネルギー研究所 DC-DC converter and semiconductor device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
TWI635750B (en) 2013-08-02 2018-09-11 半導體能源研究所股份有限公司 Imaging device and operation method thereof
JP2015053477A (en) 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 Semiconductor device and method for manufacturing the same
JP6345023B2 (en) 2013-08-07 2018-06-20 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US9601591B2 (en) 2013-08-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9299855B2 (en) 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
JP6329843B2 (en) 2013-08-19 2018-05-23 株式会社半導体エネルギー研究所 Semiconductor device
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
TWI663820B (en) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 Charge pump circuit and semiconductor device including the same
KR102232133B1 (en) 2013-08-22 2021-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102244553B1 (en) 2013-08-23 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Capacitor and semiconductor device
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5678149B2 (en) * 2013-08-26 2015-02-25 出光興産株式会社 Semiconductor thin film, manufacturing method thereof, thin film transistor, active matrix drive display panel
TW202334724A (en) 2013-08-28 2023-09-01 日商半導體能源研究所股份有限公司 Display device
JP5702447B2 (en) * 2013-08-29 2015-04-15 出光興産株式会社 Semiconductor thin film, manufacturing method thereof, and thin film transistor
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6426402B2 (en) 2013-08-30 2018-11-21 株式会社半導体エネルギー研究所 Display device
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
JP6406926B2 (en) 2013-09-04 2018-10-17 株式会社半導体エネルギー研究所 Semiconductor device
US10008513B2 (en) 2013-09-05 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (en) 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6401977B2 (en) 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 Semiconductor device
KR102294507B1 (en) 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9590110B2 (en) 2013-09-10 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Ultraviolet light sensor circuit
TWI640014B (en) 2013-09-11 2018-11-01 半導體能源研究所股份有限公司 Memory device, semiconductor device, and electronic device
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9893194B2 (en) 2013-09-12 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9716003B2 (en) 2013-09-13 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI646690B (en) 2013-09-13 2019-01-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP6429540B2 (en) 2013-09-13 2018-11-28 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
KR102307142B1 (en) 2013-09-13 2021-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
JP6467171B2 (en) 2013-09-17 2019-02-06 株式会社半導体エネルギー研究所 Semiconductor device
US9859439B2 (en) 2013-09-18 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI677989B (en) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP2015084418A (en) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 Semiconductor device
JP6570817B2 (en) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 Semiconductor device
TWI678740B (en) 2013-09-23 2019-12-01 日商半導體能源研究所股份有限公司 Semiconductor device
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6383616B2 (en) 2013-09-25 2018-08-29 株式会社半導体エネルギー研究所 Semiconductor device
KR102213515B1 (en) 2013-09-26 2021-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Switch circuit, semiconductor device, and system
JP6392603B2 (en) 2013-09-27 2018-09-19 株式会社半導体エネルギー研究所 Semiconductor device
JP6581765B2 (en) 2013-10-02 2019-09-25 株式会社半導体エネルギー研究所 Bootstrap circuit and semiconductor device having bootstrap circuit
JP6386323B2 (en) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 Semiconductor device
TW202203465A (en) 2013-10-10 2022-01-16 日商半導體能源研究所股份有限公司 Liquid crystal display device
US9293592B2 (en) 2013-10-11 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102275031B1 (en) 2013-10-16 2021-07-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for driving arithmetic processing unit
TWI642170B (en) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 Display device and electronic device
TWI621127B (en) 2013-10-18 2018-04-11 半導體能源研究所股份有限公司 Arithmetic processing unit and driving method thereof
US9276128B2 (en) 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
CN105659369B (en) 2013-10-22 2019-10-22 株式会社半导体能源研究所 The manufacturing method of semiconductor device and semiconductor device
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
WO2015060203A1 (en) 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Display device
DE102014220672A1 (en) 2013-10-22 2015-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015179247A (en) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 display device
KR102244460B1 (en) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
JP6625796B2 (en) 2013-10-25 2019-12-25 株式会社半導体エネルギー研究所 Display device
JP6457239B2 (en) 2013-10-31 2019-01-23 株式会社半導体エネルギー研究所 Semiconductor device
US9590111B2 (en) 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6440457B2 (en) 2013-11-07 2018-12-19 株式会社半導体エネルギー研究所 Semiconductor device
JP6478562B2 (en) 2013-11-07 2019-03-06 株式会社半導体エネルギー研究所 Semiconductor device
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
JP2015118724A (en) 2013-11-13 2015-06-25 株式会社半導体エネルギー研究所 Semiconductor device and method for driving the semiconductor device
JP6426437B2 (en) 2013-11-22 2018-11-21 株式会社半導体エネルギー研究所 Semiconductor device
JP6393590B2 (en) 2013-11-22 2018-09-19 株式会社半導体エネルギー研究所 Semiconductor device
JP6486660B2 (en) 2013-11-27 2019-03-20 株式会社半導体エネルギー研究所 Display device
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2016001712A (en) 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
KR102215364B1 (en) 2013-12-02 2021-02-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and method for manufacturing the same
KR102386362B1 (en) 2013-12-02 2022-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US9601634B2 (en) 2013-12-02 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9991392B2 (en) 2013-12-03 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016027597A (en) 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 Semiconductor device
CN103943683B (en) * 2013-12-06 2017-12-26 山东大学(威海) A kind of indium tin zinc oxide homogeneity thin film transistor (TFT) and preparation method thereof
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6537264B2 (en) 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 Semiconductor device
TWI642186B (en) 2013-12-18 2018-11-21 日商半導體能源研究所股份有限公司 Semiconductor device
TWI721409B (en) 2013-12-19 2021-03-11 日商半導體能源研究所股份有限公司 Semiconductor device
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6444714B2 (en) 2013-12-20 2018-12-26 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2015097586A1 (en) 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI637484B (en) 2013-12-26 2018-10-01 日商半導體能源研究所股份有限公司 Semiconductor device
JP6402017B2 (en) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 Semiconductor device
KR20160102295A (en) 2013-12-26 2016-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2015097596A1 (en) 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9960280B2 (en) 2013-12-26 2018-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6506545B2 (en) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 Semiconductor device
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
JP6446258B2 (en) 2013-12-27 2018-12-26 株式会社半導体エネルギー研究所 Transistor
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102381859B1 (en) 2013-12-27 2022-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting device
JP6488124B2 (en) 2013-12-27 2019-03-20 株式会社半導体エネルギー研究所 Semiconductor device
WO2015097593A1 (en) 2013-12-27 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6506961B2 (en) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 Liquid crystal display
JP6444723B2 (en) 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 apparatus
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
KR102306200B1 (en) 2014-01-24 2021-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2015114476A1 (en) 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9929044B2 (en) 2014-01-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9653487B2 (en) 2014-02-05 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, module, and electronic device
US9929279B2 (en) 2014-02-05 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI665778B (en) 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 Semiconductor device, module, and electronic device
JP6473626B2 (en) 2014-02-06 2019-02-20 株式会社半導体エネルギー研究所 Semiconductor device
TWI658597B (en) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 Semiconductor device
US9479175B2 (en) 2014-02-07 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6420165B2 (en) 2014-02-07 2018-11-07 株式会社半導体エネルギー研究所 Semiconductor device
JP2015165226A (en) 2014-02-07 2015-09-17 株式会社半導体エネルギー研究所 Device
JP6545970B2 (en) 2014-02-07 2019-07-17 株式会社半導体エネルギー研究所 apparatus
CN105960633B (en) 2014-02-07 2020-06-19 株式会社半导体能源研究所 Semiconductor device, device and electronic apparatus
TWI779298B (en) 2014-02-11 2022-10-01 日商半導體能源研究所股份有限公司 Display device and electronic device
WO2015125042A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
JP6506566B2 (en) 2014-02-21 2019-04-24 株式会社半導体エネルギー研究所 Current measurement method
TWI675004B (en) 2014-02-21 2019-10-21 日商半導體能源研究所股份有限公司 Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
JP2015172991A (en) 2014-02-21 2015-10-01 株式会社半導体エネルギー研究所 Semiconductor device, electronic component, and electronic device
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10074576B2 (en) 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6542542B2 (en) 2014-02-28 2019-07-10 株式会社半導体エネルギー研究所 Semiconductor device
JP2015162633A (en) * 2014-02-28 2015-09-07 株式会社東芝 semiconductor device
CN106104772B (en) 2014-02-28 2020-11-10 株式会社半导体能源研究所 Semiconductor device and display device having the same
JP6474280B2 (en) 2014-03-05 2019-02-27 株式会社半導体エネルギー研究所 Semiconductor device
KR20150104518A (en) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Level shifter circuit
US10096489B2 (en) 2014-03-06 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP6625328B2 (en) 2014-03-06 2019-12-25 株式会社半導体エネルギー研究所 Method for driving semiconductor device
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6585354B2 (en) 2014-03-07 2019-10-02 株式会社半導体エネルギー研究所 Semiconductor device
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9653611B2 (en) 2014-03-07 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR102267237B1 (en) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015132694A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
JP6442321B2 (en) 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 Semiconductor device, driving method thereof, and electronic apparatus
US9443872B2 (en) 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015136413A1 (en) 2014-03-12 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9640669B2 (en) 2014-03-13 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
JP6541376B2 (en) 2014-03-13 2019-07-10 株式会社半導体エネルギー研究所 Method of operating programmable logic device
WO2015136418A1 (en) 2014-03-13 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6525421B2 (en) 2014-03-13 2019-06-05 株式会社半導体エネルギー研究所 Semiconductor device
JP6677449B2 (en) 2014-03-13 2020-04-08 株式会社半導体エネルギー研究所 Driving method of semiconductor device
JP2015188071A (en) 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 semiconductor device
US9299848B2 (en) 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
JP6559444B2 (en) 2014-03-14 2019-08-14 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9887212B2 (en) 2014-03-14 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102252213B1 (en) 2014-03-14 2021-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Circuit system
JP6509596B2 (en) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 Semiconductor device
WO2015140656A1 (en) 2014-03-18 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9842842B2 (en) 2014-03-19 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device and electronic device having the same
US9887291B2 (en) 2014-03-19 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module
JP6495698B2 (en) 2014-03-20 2019-04-03 株式会社半導体エネルギー研究所 Semiconductor device, electronic component, and electronic device
TWI657488B (en) 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 Semiconductor device, display device including semiconductor device, display module including display device, and electronic device including semiconductor device, display device, and display module
CN111048509B (en) 2014-03-28 2023-12-01 株式会社半导体能源研究所 Semiconductor device with a semiconductor device having a plurality of semiconductor chips
JP6487738B2 (en) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 Semiconductor devices, electronic components
TWI735206B (en) 2014-04-10 2021-08-01 日商半導體能源研究所股份有限公司 Memory device and semiconductor device
JP6541398B2 (en) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 Semiconductor device
TWI646782B (en) 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 Holding circuit, driving method of holding circuit, and semiconductor device including holding circuit
US9674470B2 (en) 2014-04-11 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for driving semiconductor device, and method for driving electronic device
JP6635670B2 (en) 2014-04-11 2020-01-29 株式会社半導体エネルギー研究所 Semiconductor device
WO2015159183A2 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device having the same
KR20160144492A (en) 2014-04-18 2016-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
KR102511325B1 (en) 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and operation method thereof
JP6613044B2 (en) 2014-04-22 2019-11-27 株式会社半導体エネルギー研究所 Display device, display module, and electronic device
KR102380829B1 (en) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging device
TWI643457B (en) 2014-04-25 2018-12-01 日商半導體能源研究所股份有限公司 Semiconductor device
KR102330412B1 (en) 2014-04-25 2021-11-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, electronic component, and electronic device
US9780226B2 (en) 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6468686B2 (en) 2014-04-25 2019-02-13 株式会社半導体エネルギー研究所 I / O device
US10043913B2 (en) 2014-04-30 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device, display device, module, and electronic device
US10656799B2 (en) 2014-05-02 2020-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and operation method thereof
TWI679624B (en) 2014-05-02 2019-12-11 日商半導體能源研究所股份有限公司 Semiconductor device
JP6537341B2 (en) 2014-05-07 2019-07-03 株式会社半導体エネルギー研究所 Semiconductor device
JP6653997B2 (en) 2014-05-09 2020-02-26 株式会社半導体エネルギー研究所 Display correction circuit and display device
KR102333604B1 (en) 2014-05-15 2021-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device including the same
JP6612056B2 (en) 2014-05-16 2019-11-27 株式会社半導体エネルギー研究所 Imaging device and monitoring device
JP2015233130A (en) 2014-05-16 2015-12-24 株式会社半導体エネルギー研究所 Semiconductor substrate and semiconductor device manufacturing method
JP6580863B2 (en) 2014-05-22 2019-09-25 株式会社半導体エネルギー研究所 Semiconductor devices, health management systems
JP6616102B2 (en) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 Storage device and electronic device
TWI672804B (en) 2014-05-23 2019-09-21 日商半導體能源研究所股份有限公司 Manufacturing method of semiconductor device
DE112015002491T5 (en) * 2014-05-27 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US10020403B2 (en) 2014-05-27 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR20150138026A (en) 2014-05-29 2015-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102418666B1 (en) 2014-05-29 2022-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging element, electronic appliance, method for driving imaging device, and method for driving electronic appliance
JP6653129B2 (en) 2014-05-29 2020-02-26 株式会社半導体エネルギー研究所 Storage device
JP6615490B2 (en) 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 Semiconductor device and electronic equipment
JP6525722B2 (en) 2014-05-29 2019-06-05 株式会社半導体エネルギー研究所 Memory device, electronic component, and electronic device
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
JP6538426B2 (en) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 Semiconductor device and electronic device
TWI646658B (en) 2014-05-30 2019-01-01 日商半導體能源研究所股份有限公司 Semiconductor device
TWI663726B (en) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
KR102259172B1 (en) 2014-05-30 2021-06-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, manufacturing method thereof, and electronic device
SG10201912585TA (en) 2014-05-30 2020-02-27 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
JP6537892B2 (en) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 Semiconductor device and electronic device
WO2015189731A1 (en) 2014-06-13 2015-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
KR102344782B1 (en) 2014-06-13 2021-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Input device and input/output device
JP2016015475A (en) 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 Semiconductor device and electronic apparatus
TWI663733B (en) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 Transistor and semiconductor device
KR20150146409A (en) 2014-06-20 2015-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, input/output device, and electronic device
TWI666776B (en) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 Semiconductor device and display device having the same
US9722090B2 (en) 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
JP6545541B2 (en) 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 Imaging device, monitoring device, and electronic device
US10002971B2 (en) 2014-07-03 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9647129B2 (en) 2014-07-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
CN106537604B (en) 2014-07-15 2020-09-11 株式会社半导体能源研究所 Semiconductor device, method of manufacturing the same, and display device including the same
JP6581825B2 (en) 2014-07-18 2019-09-25 株式会社半導体エネルギー研究所 Display system
KR102422059B1 (en) 2014-07-18 2022-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, imaging device, and electronic device
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016012893A1 (en) 2014-07-25 2016-01-28 Semiconductor Energy Laboratory Co., Ltd. Oscillator circuit and semiconductor device including the same
JP6527416B2 (en) 2014-07-29 2019-06-05 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR102533396B1 (en) 2014-07-31 2023-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device
JP6555956B2 (en) 2014-07-31 2019-08-07 株式会社半導体エネルギー研究所 Imaging device, monitoring device, and electronic device
US9705004B2 (en) 2014-08-01 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6652342B2 (en) 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 Semiconductor device
JP6553444B2 (en) 2014-08-08 2019-07-31 株式会社半導体エネルギー研究所 Semiconductor device
US9595955B2 (en) 2014-08-08 2017-03-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including power storage elements and switches
US10147747B2 (en) 2014-08-21 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US10032888B2 (en) 2014-08-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
KR102509203B1 (en) 2014-08-29 2023-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging device and electronic device
KR102441803B1 (en) 2014-09-02 2022-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging device and electronic device
KR102329498B1 (en) 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
TW201614626A (en) 2014-09-05 2016-04-16 Semiconductor Energy Lab Display device and electronic device
JP6676316B2 (en) 2014-09-12 2020-04-08 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9722091B2 (en) 2014-09-12 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016066788A (en) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 Method of evaluating semiconductor film, and method of manufacturing semiconductor device
KR20160034200A (en) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9401364B2 (en) 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR102513878B1 (en) 2014-09-19 2023-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US10071904B2 (en) 2014-09-25 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP2016111677A (en) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 Semiconductor device, wireless sensor and electronic device
US10141342B2 (en) 2014-09-26 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US10170055B2 (en) 2014-09-26 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
WO2016055894A1 (en) 2014-10-06 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9698170B2 (en) 2014-10-07 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
KR20170069207A (en) 2014-10-10 2017-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, circuit board, and electronic device
KR102433326B1 (en) 2014-10-10 2022-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Logic circuit, processing unit, electronic component, and electronic device
US9991393B2 (en) 2014-10-16 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6645793B2 (en) 2014-10-17 2020-02-14 株式会社半導体エネルギー研究所 Semiconductor device
WO2016063159A1 (en) 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, module, and electronic device
US10068927B2 (en) 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6615565B2 (en) 2014-10-24 2019-12-04 株式会社半導体エネルギー研究所 Semiconductor device
TWI652362B (en) 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 Oxide and manufacturing method thereof
US9704704B2 (en) 2014-10-28 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2016067144A1 (en) 2014-10-28 2016-05-06 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method of display device, and electronic device
US9793905B2 (en) 2014-10-31 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
US9548327B2 (en) 2014-11-10 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device having a selenium containing photoelectric conversion layer
US9584707B2 (en) 2014-11-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9438234B2 (en) 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
JP6563313B2 (en) 2014-11-21 2019-08-21 株式会社半導体エネルギー研究所 Semiconductor device and electronic device
TWI699897B (en) 2014-11-21 2020-07-21 日商半導體能源研究所股份有限公司 Semiconductor device
TWI711165B (en) 2014-11-21 2020-11-21 日商半導體能源研究所股份有限公司 Semiconductor device and electronic device
WO2016083952A1 (en) 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, module, and electronic device
JP6647841B2 (en) 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 Preparation method of oxide
US9768317B2 (en) 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
JP6667267B2 (en) 2014-12-08 2020-03-18 株式会社半導体エネルギー研究所 Semiconductor device
JP6833315B2 (en) 2014-12-10 2021-02-24 株式会社半導体エネルギー研究所 Semiconductor devices and electronic devices
CN113793872A (en) 2014-12-10 2021-12-14 株式会社半导体能源研究所 Semiconductor device and method for manufacturing the same
JP6689062B2 (en) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 Semiconductor device
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2016092416A1 (en) 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
JP6676354B2 (en) 2014-12-16 2020-04-08 株式会社半導体エネルギー研究所 Semiconductor device
JP2016116220A (en) 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 Semiconductor device and electronic device
TWI687657B (en) 2014-12-18 2020-03-11 日商半導體能源研究所股份有限公司 Semiconductor device, sensor device, and electronic device
US10396210B2 (en) 2014-12-26 2019-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with stacked metal oxide and oxide semiconductor layers and display device including the semiconductor device
KR20170101233A (en) 2014-12-26 2017-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for producing sputtering target
TWI686874B (en) 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 Semiconductor device, display device, display module, electronic evice, oxide, and manufacturing method of oxide
CN107111985B (en) 2014-12-29 2020-09-18 株式会社半导体能源研究所 Semiconductor device and display device including the same
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9954112B2 (en) 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
JP6857447B2 (en) 2015-01-26 2021-04-14 株式会社半導体エネルギー研究所 Semiconductor device
TWI792065B (en) 2015-01-30 2023-02-11 日商半導體能源研究所股份有限公司 Imaging device and electronic device
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
KR20170109231A (en) 2015-02-02 2017-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxides and methods for making them
KR20170109237A (en) 2015-02-04 2017-09-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, method of manufacturing semiconductor device, or display device including semiconductor device
TWI732383B (en) 2015-02-06 2021-07-01 日商半導體能源研究所股份有限公司 Device, manufacturing method thereof, and electronic device
US9660100B2 (en) 2015-02-06 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6717604B2 (en) 2015-02-09 2020-07-01 株式会社半導体エネルギー研究所 Semiconductor device, central processing unit and electronic equipment
JP6674269B2 (en) 2015-02-09 2020-04-01 株式会社半導体エネルギー研究所 Semiconductor device and method for manufacturing semiconductor device
WO2016128859A1 (en) 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2016154225A (en) 2015-02-12 2016-08-25 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of the same
US9818880B2 (en) 2015-02-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
CN114512547A (en) 2015-02-12 2022-05-17 株式会社半导体能源研究所 Oxide semiconductor film and semiconductor device
US10249644B2 (en) 2015-02-13 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US10403646B2 (en) 2015-02-20 2019-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9991394B2 (en) 2015-02-20 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP6711642B2 (en) 2015-02-25 2020-06-17 株式会社半導体エネルギー研究所 Semiconductor device
JP6739185B2 (en) 2015-02-26 2020-08-12 株式会社半導体エネルギー研究所 Storage system and storage control circuit
US9653613B2 (en) 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6744108B2 (en) 2015-03-02 2020-08-19 株式会社半導体エネルギー研究所 Transistor, method for manufacturing transistor, semiconductor device, and electronic device
TWI718125B (en) 2015-03-03 2021-02-11 日商半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR20230036170A (en) 2015-03-03 2023-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, method for manufacturing the same, or display device including the same
WO2016139560A1 (en) 2015-03-03 2016-09-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device including the oxide semiconductor film, and display device including the semiconductor device
JP6681117B2 (en) 2015-03-13 2020-04-15 株式会社半導体エネルギー研究所 Semiconductor device
JP6304445B2 (en) * 2015-03-16 2018-04-04 富士電機株式会社 Manufacturing method of semiconductor device
CN114546158A (en) 2015-03-17 2022-05-27 株式会社半导体能源研究所 Touch screen
US9964799B2 (en) 2015-03-17 2018-05-08 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US9882061B2 (en) 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10008609B2 (en) 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
US10134332B2 (en) 2015-03-18 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device, and driving method of display device
US10147823B2 (en) 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102582523B1 (en) 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and electronic device
JP6662665B2 (en) 2015-03-19 2020-03-11 株式会社半導体エネルギー研究所 Liquid crystal display device and electronic equipment using the liquid crystal display device
KR20160114511A (en) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
US9842938B2 (en) 2015-03-24 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including semiconductor device
US9634048B2 (en) 2015-03-24 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
CN104716198B (en) 2015-03-25 2018-03-27 京东方科技集团股份有限公司 Thin film transistor (TFT) and its manufacture method, display device
US10096715B2 (en) 2015-03-26 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and electronic device
US10429704B2 (en) 2015-03-26 2019-10-01 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI695513B (en) 2015-03-27 2020-06-01 日商半導體能源研究所股份有限公司 Semiconductor device and electronic device
JP6736321B2 (en) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 Method of manufacturing semiconductor device
TWI695415B (en) 2015-03-30 2020-06-01 日商半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
US9716852B2 (en) 2015-04-03 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Broadcast system
US10389961B2 (en) 2015-04-09 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10372274B2 (en) 2015-04-13 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
DE112016001703T5 (en) 2015-04-13 2017-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
US10056497B2 (en) 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9916791B2 (en) 2015-04-16 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device, and method for driving display device
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10002970B2 (en) 2015-04-30 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, or display device including the same
KR102549926B1 (en) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, method for manufacturing the same, and electronic device
US10671204B2 (en) 2015-05-04 2020-06-02 Semiconductor Energy Laboratory Co., Ltd. Touch panel and data processor
JP6681780B2 (en) 2015-05-07 2020-04-15 株式会社半導体エネルギー研究所 Display systems and electronic devices
DE102016207737A1 (en) 2015-05-11 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the semiconductor device, tire and moving object
TWI693719B (en) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 Manufacturing method of semiconductor device
JP6935171B2 (en) 2015-05-14 2021-09-15 株式会社半導体エネルギー研究所 Semiconductor device
US11728356B2 (en) 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
US9627034B2 (en) 2015-05-15 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR20240014632A (en) 2015-05-22 2024-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device including the semiconductor device
US9837547B2 (en) 2015-05-22 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide conductor and display device including the semiconductor device
JP6773453B2 (en) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 Storage devices and electronic devices
US10139663B2 (en) 2015-05-29 2018-11-27 Semiconductor Energy Laboratory Co., Ltd. Input/output device and electronic device
KR102553553B1 (en) 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Imaging device, method for operating the same, and electronic device
KR102593883B1 (en) 2015-06-19 2023-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, manufacturing method thereof, and electronic device
US9860465B2 (en) 2015-06-23 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9935633B2 (en) 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US10290573B2 (en) 2015-07-02 2019-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9917209B2 (en) 2015-07-03 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including step of forming trench over semiconductor
US10181531B2 (en) 2015-07-08 2019-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor having low parasitic capacitance
JP2017022377A (en) 2015-07-14 2017-01-26 株式会社半導体エネルギー研究所 Semiconductor device
US10501003B2 (en) 2015-07-17 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, lighting device, and vehicle
US10985278B2 (en) 2015-07-21 2021-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
US11024725B2 (en) 2015-07-24 2021-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide film
US11189736B2 (en) 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US10019025B2 (en) 2015-07-30 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10585506B2 (en) 2015-07-30 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device with high visibility regardless of illuminance of external light
US9825177B2 (en) 2015-07-30 2017-11-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a semiconductor device using multiple etching mask
CN106409919A (en) 2015-07-30 2017-02-15 株式会社半导体能源研究所 Semiconductor device and display device including the semiconductor device
US9876946B2 (en) 2015-08-03 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9911861B2 (en) 2015-08-03 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of the same, and electronic device
JP6791661B2 (en) 2015-08-07 2020-11-25 株式会社半導体エネルギー研究所 Display panel
WO2017029576A1 (en) 2015-08-19 2017-02-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2017041877A (en) 2015-08-21 2017-02-23 株式会社半導体エネルギー研究所 Semiconductor device, electronic component, and electronic apparatus
US9666606B2 (en) 2015-08-21 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9773919B2 (en) 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017037564A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, transistor, and semiconductor device
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage
JP2017050537A (en) 2015-08-31 2017-03-09 株式会社半導体エネルギー研究所 Semiconductor device
JP6807683B2 (en) 2015-09-11 2021-01-06 株式会社半導体エネルギー研究所 Input / output panel
SG10201607278TA (en) 2015-09-18 2017-04-27 Semiconductor Energy Lab Co Ltd Semiconductor device and electronic device
JP2017063420A (en) 2015-09-25 2017-03-30 株式会社半導体エネルギー研究所 Semiconductor device
CN108140657A (en) 2015-09-30 2018-06-08 株式会社半导体能源研究所 Semiconductor device and electronic equipment
WO2017064587A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9852926B2 (en) 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
KR20230169441A (en) 2015-10-23 2023-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Module and electronic device
US20170118479A1 (en) 2015-10-23 2017-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10007161B2 (en) 2015-10-26 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device
SG10201608814YA (en) 2015-10-29 2017-05-30 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the semiconductor device
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
CN105355662A (en) * 2015-11-04 2016-02-24 京东方科技集团股份有限公司 Thin film transistor, manufacturing method thereof, array substrate and display device
US9741400B2 (en) 2015-11-05 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, and method for operating the semiconductor device
JP6796461B2 (en) 2015-11-18 2020-12-09 株式会社半導体エネルギー研究所 Semiconductor devices, computers and electronic devices
US9680030B1 (en) * 2015-12-02 2017-06-13 Advanced Device Research Inc. Enhancement-mode field effect transistor having metal oxide channel layer
JP6645160B2 (en) * 2015-12-11 2020-02-12 三菱電機株式会社 Display device substrate and method of manufacturing the same, and display device and method of manufacturing the same
US10868045B2 (en) 2015-12-11 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP2018032839A (en) 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 Transistor, circuit, semiconductor device, display device, and electronic apparatus
US10050152B2 (en) 2015-12-16 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR20180095836A (en) 2015-12-18 2018-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and display device including the semiconductor device
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
KR102595042B1 (en) 2015-12-28 2023-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor devices and display devices including semiconductor devices
CN108473334B (en) 2015-12-29 2021-03-12 株式会社半导体能源研究所 Metal oxide film and semiconductor device
JP6851814B2 (en) 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 Transistor
JP2017135698A (en) 2015-12-29 2017-08-03 株式会社半導体エネルギー研究所 Semiconductor device, computer, and electronic device
JP6827328B2 (en) 2016-01-15 2021-02-10 株式会社半導体エネルギー研究所 Semiconductor devices and electronic devices
CN113224171A (en) 2016-01-18 2021-08-06 株式会社半导体能源研究所 Metal oxide film, semiconductor device, and display device
US9905657B2 (en) 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9887010B2 (en) 2016-01-21 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and driving method thereof
US10411013B2 (en) 2016-01-22 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US10700212B2 (en) 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6970511B2 (en) 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 Transistor
US9954003B2 (en) 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN108780818B (en) 2016-03-04 2023-01-31 株式会社半导体能源研究所 Semiconductor device, method of manufacturing the same, and display device including the same
US10263114B2 (en) 2016-03-04 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
WO2017149413A1 (en) 2016-03-04 2017-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6904730B2 (en) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 Imaging device
US9882064B2 (en) 2016-03-10 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Transistor and electronic device
US10096720B2 (en) 2016-03-25 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
JP6668455B2 (en) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 Method for manufacturing oxide semiconductor film
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
WO2017178923A1 (en) 2016-04-15 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
KR20230019215A (en) 2016-05-19 2023-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Composite oxide semiconductor and transistor
WO2017208119A1 (en) 2016-06-03 2017-12-07 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and field-effect transistor
KR102330605B1 (en) 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US10317945B2 (en) * 2016-09-30 2019-06-11 Intel Corporation Electronic device with transparent display
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN114115609A (en) 2016-11-25 2022-03-01 株式会社半导体能源研究所 Display device and working method thereof
JP6870470B2 (en) * 2017-05-19 2021-05-12 トヨタ自動車株式会社 Fuel cell separator
CN110998863A (en) 2017-07-31 2020-04-10 株式会社半导体能源研究所 Semiconductor device and method for manufacturing semiconductor device
JP6782211B2 (en) * 2017-09-08 2020-11-11 株式会社東芝 Transparent electrodes, devices using them, and methods for manufacturing devices
WO2019145803A1 (en) 2018-01-24 2019-08-01 株式会社半導体エネルギー研究所 Semiconductor device, electronic component, and electronic apparatus
WO2019175704A1 (en) 2018-03-16 2019-09-19 株式会社半導体エネルギー研究所 Electrical module, display panel, display device, input/output device, information processing device, and production method for electrical module
WO2020012276A1 (en) 2018-07-09 2020-01-16 株式会社半導体エネルギー研究所 Semiconductor device
CN109545688B (en) * 2018-11-20 2022-01-11 合肥鑫晟光电科技有限公司 Method and device for determining final width-to-length ratio of channel region of thin film transistor
CN109659355B (en) * 2018-12-06 2020-11-24 中国电子科技集团公司第十三研究所 Normally-off gallium oxide field effect transistor structure
JP2020126995A (en) * 2019-02-06 2020-08-20 シャープ株式会社 Semiconductor laser element and manufacturing method of the same

Citations (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385731A (en) * 1961-08-17 1968-05-28 Rca Corp Method of fabricating thin film device having close spaced electrodes
US4220514A (en) * 1977-11-07 1980-09-02 Jacques Duchene Electrode for an electrolytic cell particularly for electrolytic display cells and process of manufacture
US4582395A (en) * 1980-07-31 1986-04-15 Kabushiki Kaisha Suwa Seikosha Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor
US4770498A (en) * 1982-07-12 1988-09-13 Hosiden Electronics Co., Ltd. Dot-matrix liquid crystal display
US4823803A (en) * 1987-07-31 1989-04-25 Winners Japan Company Limited Halitosis detector device
JPH06120006A (en) * 1992-09-30 1994-04-28 Taiyo Yuden Co Ltd Tin oxide thin film resistor and manufacture thereof
US5374570A (en) * 1989-03-17 1994-12-20 Fujitsu Limited Method of manufacturing active matrix display device using insulation layer formed by the ale method
US5389159A (en) * 1992-09-01 1995-02-14 Canon Kabushiki Kaisha Solar cell module and method for producing the same
US5578501A (en) * 1991-09-24 1996-11-26 Canon Kabushiki Kaisha Method of manufacturing a solar cell by formation of a zinc oxide transparent conductive layer
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US5741580A (en) * 1995-08-25 1998-04-21 Minolta Co, Ltd. Crystalline thin film and producing method thereof, and acoustooptic deflection element
US5744864A (en) * 1995-08-03 1998-04-28 U.S. Philips Corporation Semiconductor device having a transparent switching element
US5942756A (en) * 1992-02-20 1999-08-24 Imation Corp. Radiation detector and fabrication method
US6218208B1 (en) * 1999-07-02 2001-04-17 National Science Council Fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer of a tin oxide thin film
US20010005245A1 (en) * 1999-12-24 2001-06-28 Nec Corporation Color liquid crystal display and method of manufacturing color liquid crystal display
US6281552B1 (en) * 1999-03-23 2001-08-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having ldd regions
US6291837B1 (en) * 1997-03-18 2001-09-18 Semiconductor Energy Laboratory Co., Ltd. Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof
US20010030324A1 (en) * 2000-04-12 2001-10-18 Casio Computer Co., Ltd. Photo sensor array and method for manufacturing the same
US6351428B2 (en) * 2000-02-29 2002-02-26 Micron Technology, Inc. Programmable low voltage decode circuits with ultra-thin tunnel oxides
US6384448B1 (en) * 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
US20020056838A1 (en) * 2000-11-15 2002-05-16 Matsushita Electric Industrial Co., Ltd. Thin film transistor array, method of producing the same, and display panel using the same
US20020066478A1 (en) * 2000-10-05 2002-06-06 Kaneka Corporation Photovoltaic module and method of manufacturing the same
US6479398B1 (en) * 2000-08-02 2002-11-12 Industrial Technology Research Institute Method of manufacturing an amorphous-silicon thin film transistor
US20030047785A1 (en) * 2001-09-10 2003-03-13 Masahi Kawasaki Thin film transistor and matrix display device
US20030151355A1 (en) * 2000-02-16 2003-08-14 Idemitsu Kosan Co., Ltd. Actively driven organic EL device and manufacturing method thereof
US6617209B1 (en) * 2002-02-22 2003-09-09 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric
US20030218221A1 (en) * 2002-05-21 2003-11-27 the State of Oregon acting by and through the behalf of Oregon State University Transistor structures and methods for making the same
US20040023432A1 (en) * 2000-08-18 2004-02-05 Koichi Haga Semiconductor polysilicon component and method of manufacture thereof
US20040029364A1 (en) * 2002-04-22 2004-02-12 Takashi Aoki Method of manufacturing device, device, and electronic apparatus
US6727522B1 (en) * 1998-11-17 2004-04-27 Japan Science And Technology Corporation Transistor and semiconductor device
US6798032B2 (en) * 2001-05-22 2004-09-28 Sharp Kabushiki Kaisha Metal film pattern and manufacturing method thereof
US20040223432A1 (en) * 2003-05-06 2004-11-11 Yasushi Hanamoto Optical disk apparatus and method for controlling the same
US20050039670A1 (en) * 2001-11-05 2005-02-24 Hideo Hosono Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US6891237B1 (en) * 2000-06-27 2005-05-10 Lucent Technologies Inc. Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
US20050224825A1 (en) * 2001-04-27 2005-10-13 Shin-Etsu Handotai Co., Ltd. Production method for light emitting element
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (en) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JPH0667187A (en) 1992-08-19 1994-03-11 Seiko Epson Corp Active matrix liquid crystal display device
JP2674496B2 (en) 1993-12-28 1997-11-12 日本電気株式会社 Transparent insulating substrate and thin film transistor
JP3479375B2 (en) * 1995-03-27 2003-12-15 科学技術振興事業団 Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
JPH1041477A (en) 1996-07-23 1998-02-13 Sanyo Electric Co Ltd Ferroelectric memory
JP2001244464A (en) 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method of manufacturing metal oxide transistor
JP4089858B2 (en) 2000-09-01 2008-05-28 国立大学法人東北大学 Semiconductor device
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors

Patent Citations (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385731A (en) * 1961-08-17 1968-05-28 Rca Corp Method of fabricating thin film device having close spaced electrodes
US4220514A (en) * 1977-11-07 1980-09-02 Jacques Duchene Electrode for an electrolytic cell particularly for electrolytic display cells and process of manufacture
US4582395A (en) * 1980-07-31 1986-04-15 Kabushiki Kaisha Suwa Seikosha Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor
US4770498A (en) * 1982-07-12 1988-09-13 Hosiden Electronics Co., Ltd. Dot-matrix liquid crystal display
US4823803A (en) * 1987-07-31 1989-04-25 Winners Japan Company Limited Halitosis detector device
US5374570A (en) * 1989-03-17 1994-12-20 Fujitsu Limited Method of manufacturing active matrix display device using insulation layer formed by the ale method
US5578501A (en) * 1991-09-24 1996-11-26 Canon Kabushiki Kaisha Method of manufacturing a solar cell by formation of a zinc oxide transparent conductive layer
US5942756A (en) * 1992-02-20 1999-08-24 Imation Corp. Radiation detector and fabrication method
US5389159A (en) * 1992-09-01 1995-02-14 Canon Kabushiki Kaisha Solar cell module and method for producing the same
JPH06120006A (en) * 1992-09-30 1994-04-28 Taiyo Yuden Co Ltd Tin oxide thin film resistor and manufacture thereof
US5744864A (en) * 1995-08-03 1998-04-28 U.S. Philips Corporation Semiconductor device having a transparent switching element
US5741580A (en) * 1995-08-25 1998-04-21 Minolta Co, Ltd. Crystalline thin film and producing method thereof, and acoustooptic deflection element
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
US6291837B1 (en) * 1997-03-18 2001-09-18 Semiconductor Energy Laboratory Co., Ltd. Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof
US6727522B1 (en) * 1998-11-17 2004-04-27 Japan Science And Technology Corporation Transistor and semiconductor device
US6281552B1 (en) * 1999-03-23 2001-08-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having ldd regions
US6218208B1 (en) * 1999-07-02 2001-04-17 National Science Council Fabrication of a multi-structure ion sensitive field effect transistor with a pH sensing layer of a tin oxide thin film
US20010005245A1 (en) * 1999-12-24 2001-06-28 Nec Corporation Color liquid crystal display and method of manufacturing color liquid crystal display
US20030151355A1 (en) * 2000-02-16 2003-08-14 Idemitsu Kosan Co., Ltd. Actively driven organic EL device and manufacturing method thereof
US6384448B1 (en) * 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
US6351428B2 (en) * 2000-02-29 2002-02-26 Micron Technology, Inc. Programmable low voltage decode circuits with ultra-thin tunnel oxides
US20010030324A1 (en) * 2000-04-12 2001-10-18 Casio Computer Co., Ltd. Photo sensor array and method for manufacturing the same
US6891237B1 (en) * 2000-06-27 2005-05-10 Lucent Technologies Inc. Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
US6479398B1 (en) * 2000-08-02 2002-11-12 Industrial Technology Research Institute Method of manufacturing an amorphous-silicon thin film transistor
US20040023432A1 (en) * 2000-08-18 2004-02-05 Koichi Haga Semiconductor polysilicon component and method of manufacture thereof
US6838308B2 (en) * 2000-08-18 2005-01-04 Tohoku Techno Arch Co., Ltd. Semiconductor polysilicon component and method of manufacture thereof
US20020066478A1 (en) * 2000-10-05 2002-06-06 Kaneka Corporation Photovoltaic module and method of manufacturing the same
US20020056838A1 (en) * 2000-11-15 2002-05-16 Matsushita Electric Industrial Co., Ltd. Thin film transistor array, method of producing the same, and display panel using the same
US20050224825A1 (en) * 2001-04-27 2005-10-13 Shin-Etsu Handotai Co., Ltd. Production method for light emitting element
US6798032B2 (en) * 2001-05-22 2004-09-28 Sharp Kabushiki Kaisha Metal film pattern and manufacturing method thereof
US6563174B2 (en) * 2001-09-10 2003-05-13 Sharp Kabushiki Kaisha Thin film transistor and matrix display device
US20030047785A1 (en) * 2001-09-10 2003-03-13 Masahi Kawasaki Thin film transistor and matrix display device
US20050039670A1 (en) * 2001-11-05 2005-02-24 Hideo Hosono Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US6617209B1 (en) * 2002-02-22 2003-09-09 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric
US20040029364A1 (en) * 2002-04-22 2004-02-12 Takashi Aoki Method of manufacturing device, device, and electronic apparatus
US20030218221A1 (en) * 2002-05-21 2003-11-27 the State of Oregon acting by and through the behalf of Oregon State University Transistor structures and methods for making the same
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US20070141784A1 (en) * 2002-05-21 2007-06-21 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Orego Transistor structures and methods for making the same
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US20040223432A1 (en) * 2003-05-06 2004-11-11 Yasushi Hanamoto Optical disk apparatus and method for controlling the same
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Eleectroless deposition of cadmium stannate, zinc oxide, and aluminum-doped zinc oxide films Raviendra D. and j.K. Sharma.; 16 Jan. 1985; Journal Of Applied Physics, Page(s):838-844, Volume 58 Issue 2. *
Influence of interstitial oxygen on the c-axis orientation of sputtered and e-beam evaporated ZnO thin films Gupta, V.; Sreenivas, K.; Fahim, M.; 24-27 Aug. 1998 Page(s):325 - 328 Digital Object Identifier 10.1109/ISAF.1998.786699 *

Cited By (192)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080296569A1 (en) * 2003-09-18 2008-12-04 Industrial Technology Research Institute Compound semiconductor material and method for forming an active layer of a thin film transistor device
US8466463B2 (en) 2005-09-29 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110121290A1 (en) * 2005-09-29 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US20110117697A1 (en) * 2005-09-29 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US8669550B2 (en) 2005-09-29 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10304962B2 (en) 2005-09-29 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20080308805A1 (en) * 2005-09-29 2008-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US9099562B2 (en) 2005-09-29 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20080308806A1 (en) * 2005-09-29 2008-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US20090008639A1 (en) * 2005-09-29 2009-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US8629069B2 (en) 2005-09-29 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110163311A1 (en) * 2005-09-29 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US20100136743A1 (en) * 2005-09-29 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US8274077B2 (en) 2005-09-29 2012-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20090305461A1 (en) * 2005-09-29 2009-12-10 Semiconductor Energy Laboratory Co,. Ltd. Semiconductor Device And Manufacturing Method Thereof
US20110104851A1 (en) * 2005-09-29 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US8796069B2 (en) 2005-09-29 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20080308796A1 (en) * 2005-09-29 2008-12-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US8790959B2 (en) 2005-09-29 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070108446A1 (en) * 2005-11-15 2007-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8134156B2 (en) 2005-11-15 2012-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including zinc oxide containing semiconductor film
US20090186437A1 (en) * 2005-11-15 2009-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20090189155A1 (en) * 2005-11-15 2009-07-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100038639A1 (en) * 2005-11-15 2010-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20090189156A1 (en) * 2005-11-15 2009-07-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8368079B2 (en) 2005-11-15 2013-02-05 Semicondutor Energy Laboratory Co., Ltd. Semiconductor device including common potential line
US8158464B2 (en) 2005-11-15 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a liquid crystal display device with a semiconductor film including zinc oxide
US8525165B2 (en) 2005-11-15 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device with bottom gate zinc oxide thin film transistor
US20090186445A1 (en) * 2005-11-15 2009-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20100283055A1 (en) * 2005-12-02 2010-11-11 Kazuyoshi Inoue Tft substrate and tft substrate manufacturing method
US8778722B2 (en) 2005-12-02 2014-07-15 Idemitsu Kosan Co., Ltd. TFT substrate and method for producing TFT substrate
US8263977B2 (en) 2005-12-02 2012-09-11 Idemitsu Kosan Co., Ltd. TFT substrate and TFT substrate manufacturing method
US20070261951A1 (en) * 2006-04-06 2007-11-15 Yan Ye Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
US9209026B2 (en) 2006-08-09 2015-12-08 Nlt Technologies, Ltd. Method of fabricating a thin-film device
US20110097844A1 (en) * 2006-08-09 2011-04-28 Nec Lcd Technologies, Ltd. Method of fabricating a thin-film device
US20130237012A1 (en) * 2006-08-09 2013-09-12 Nlt Technologies Ltd Method of fabricating a thin-film device
US8420442B2 (en) * 2006-08-09 2013-04-16 Nlt Technologies, Ltd. Method of fabricating a thin-film device
US8889480B2 (en) * 2006-08-09 2014-11-18 Nlt Technologies, Ltd. Method of fabricating a thin-film device
US20080038882A1 (en) * 2006-08-09 2008-02-14 Kazushige Takechi Thin-film device and method of fabricating the same
US7884360B2 (en) * 2006-08-09 2011-02-08 Nec Lcd Technologies, Ltd. Thin-film device and method of fabricating the same
US8659014B2 (en) 2006-08-30 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8129714B2 (en) 2007-02-16 2012-03-06 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, complementary transistor circuit device
US20080197344A1 (en) * 2007-02-16 2008-08-21 Koki Yano Semiconductor, semiconductor device, complementary transistor circuit device
US8436349B2 (en) 2007-02-20 2013-05-07 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
US20100044701A1 (en) * 2007-02-20 2010-02-25 Canon Kabushiki Kaisha Thin-film transistor fabrication process and display device
US8779419B2 (en) 2007-03-23 2014-07-15 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US8158974B2 (en) 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
US8614007B2 (en) 2007-04-27 2013-12-24 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US10629581B2 (en) 2007-04-27 2020-04-21 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US20080264777A1 (en) * 2007-04-27 2008-10-30 Yan Ye Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US20090050884A1 (en) * 2007-08-02 2009-02-26 Yan Ye Thin film transistors using thin film semiconductor materials
US8294148B2 (en) 2007-08-02 2012-10-23 Applied Materials, Inc. Thin film transistors using thin film semiconductor materials
US7994508B2 (en) 2007-08-02 2011-08-09 Applied Materials, Inc. Thin film transistors using thin film semiconductor materials
US20090166616A1 (en) * 2007-12-26 2009-07-02 Hitachi, Ltd. Oxide semiconductor device and surface treatment method of oxide semiconductor
US9552902B2 (en) 2008-02-28 2017-01-24 Oxford University Innovation Limited Transparent conducting oxides
US8980066B2 (en) 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
US20090233424A1 (en) * 2008-03-14 2009-09-17 Yan Ye Thin film metal oxynitride semiconductors
US8143093B2 (en) 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US20090236597A1 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US20090239359A1 (en) * 2008-03-24 2009-09-24 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US7879698B2 (en) 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8012794B2 (en) 2008-07-02 2011-09-06 Applied Materials, Inc. Capping layers for metal oxynitride TFTS
US8435843B2 (en) 2008-07-02 2013-05-07 Applied Materials, Inc. Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
US20100001274A1 (en) * 2008-07-02 2010-01-07 Applied Materials, Inc. Capping Layers for Metal Oxynitride TFTS
US8349669B2 (en) 2008-07-02 2013-01-08 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US20100001346A1 (en) * 2008-07-02 2010-01-07 Applied Materials,Inc. Treatment of Gate Dielectric for Making High Performance Metal Oxide and Metal Oxynitride Thin Film Transistors
US20100001272A1 (en) * 2008-07-02 2010-01-07 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US8101949B2 (en) 2008-07-02 2012-01-24 Applied Materials, Inc. Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
US8809132B2 (en) 2008-07-02 2014-08-19 Applied Materials, Inc. Capping layers for metal oxynitride TFTs
US10236303B2 (en) 2008-09-12 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer
US9659969B2 (en) 2008-10-03 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US9048144B2 (en) 2008-10-03 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Display device
US11574932B2 (en) 2008-10-03 2023-02-07 Semiconductor Energy Laboratory Co., Ltd. Display device
US10573665B2 (en) 2008-10-03 2020-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device
US10910408B2 (en) 2008-10-03 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2019016796A (en) * 2008-12-24 2019-01-31 株式会社半導体エネルギー研究所 Display device
JP2019012274A (en) * 2008-12-24 2019-01-24 株式会社半導体エネルギー研究所 Display device
US11011549B2 (en) 2009-02-20 2021-05-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US10096623B2 (en) 2009-02-20 2018-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US11824062B2 (en) 2009-02-20 2023-11-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US10586811B2 (en) 2009-02-20 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US9859306B2 (en) 2009-02-20 2018-01-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US20100244017A1 (en) * 2009-03-31 2010-09-30 Randy Hoffman Thin-film transistor (tft) with an extended oxide channel
US10714503B2 (en) 2009-07-03 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US11257847B2 (en) 2009-07-03 2022-02-22 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US11637130B2 (en) 2009-07-03 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US11152493B2 (en) 2009-07-10 2021-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11855194B2 (en) 2009-07-10 2023-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9236157B2 (en) 2009-09-03 2016-01-12 Isis Innovation Limited Transparent electrically conducting oxides
US8298879B2 (en) 2009-09-24 2012-10-30 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride TFTS using wet process for source-drain metal etch
US10418466B2 (en) 2009-09-24 2019-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110070691A1 (en) * 2009-09-24 2011-03-24 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
US7988470B2 (en) 2009-09-24 2011-08-02 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
US11393917B2 (en) 2009-09-24 2022-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8840763B2 (en) 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US20110073463A1 (en) * 2009-09-28 2011-03-31 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US10446693B2 (en) 2009-10-09 2019-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11367793B2 (en) 2009-10-09 2022-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10043915B2 (en) 2009-10-09 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10770596B2 (en) 2009-10-09 2020-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9601635B2 (en) 2009-10-09 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11695080B2 (en) 2009-10-09 2023-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8400187B2 (en) 2009-10-16 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US10211344B2 (en) 2009-10-16 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US20110089975A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US10770597B2 (en) 2009-10-16 2020-09-08 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US10074747B2 (en) 2009-10-16 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10490671B2 (en) 2009-10-16 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US11302824B2 (en) 2009-10-16 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US10593810B2 (en) 2009-10-16 2020-03-17 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US9666678B2 (en) 2009-10-16 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11837461B2 (en) 2009-10-16 2023-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11742432B2 (en) 2009-10-16 2023-08-29 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US10777682B2 (en) 2009-10-16 2020-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110089419A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11004983B2 (en) 2009-10-21 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9236385B2 (en) 2009-10-21 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8803142B2 (en) 2009-10-21 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9478564B2 (en) 2009-10-21 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9735285B2 (en) 2009-10-21 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10553726B2 (en) 2009-10-21 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10103275B2 (en) 2009-10-30 2018-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9673337B2 (en) 2009-10-30 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10056385B2 (en) 2009-11-06 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including write access transistor whose oxide semiconductor layer including channel formation region
US9589961B2 (en) 2009-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including write access transistor having channel region including oxide semiconductor
US20110116310A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8576620B2 (en) 2009-11-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9922685B2 (en) 2009-11-13 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US10516055B2 (en) 2009-11-13 2019-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10944010B2 (en) 2009-11-13 2021-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11456385B2 (en) 2009-11-13 2022-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10056494B2 (en) 2009-11-13 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9461181B2 (en) 2009-11-20 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9093262B2 (en) 2009-11-20 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10186619B2 (en) 2009-11-20 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10382016B2 (en) 2009-12-11 2019-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US8994400B2 (en) 2009-12-11 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US11282864B2 (en) 2009-12-18 2022-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9391095B2 (en) 2009-12-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10256254B2 (en) 2009-12-18 2019-04-09 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9620525B2 (en) 2009-12-18 2017-04-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US11798952B2 (en) 2009-12-18 2023-10-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9991265B2 (en) 2009-12-25 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10553589B2 (en) 2009-12-25 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11825665B2 (en) 2009-12-25 2023-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349735B2 (en) 2009-12-25 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11456296B2 (en) 2009-12-25 2022-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9147462B2 (en) 2010-01-20 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US9336858B2 (en) 2010-01-22 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US9190413B2 (en) 2010-02-05 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9793276B2 (en) 2010-02-05 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistor and capacitor
US20110216571A1 (en) * 2010-03-04 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US8437165B2 (en) 2010-03-04 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US9852108B2 (en) 2010-03-08 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Processor including first transistor and second transistor
US9142549B2 (en) 2010-03-19 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9646521B2 (en) 2010-03-31 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US10043424B2 (en) 2010-03-31 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device having an oxide semiconductor switching transistor
US9007813B2 (en) 2010-05-14 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8508967B2 (en) 2010-09-03 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US9042161B2 (en) 2010-09-13 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9263116B2 (en) 2010-09-13 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9620186B2 (en) 2010-12-17 2017-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US9424923B2 (en) 2010-12-17 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
CN103474469A (en) * 2010-12-28 2013-12-25 出光兴产株式会社 Laminate structure including oxide semiconductor thin film layer, and thin film transistor
US9673336B2 (en) 2011-01-12 2017-06-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10170633B2 (en) 2011-01-12 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9601178B2 (en) 2011-01-26 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US9767862B2 (en) 2011-03-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US9508448B2 (en) 2011-03-08 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US9627386B2 (en) 2011-03-18 2017-04-18 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US9385128B2 (en) 2011-03-18 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
TWI547945B (en) * 2011-03-30 2016-09-01 半導體能源研究所股份有限公司 Semiconductor device and driving method thereof
US9443563B2 (en) 2011-04-29 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US10388670B2 (en) 2011-04-29 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10910404B2 (en) 2011-04-29 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9773810B2 (en) 2011-04-29 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9990965B2 (en) 2011-12-15 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Storage device
US8785243B2 (en) 2012-04-02 2014-07-22 Samsung Display Co., Ltd. Method for manufacturing a thin film transistor array panel
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9698278B2 (en) 2013-12-24 2017-07-04 Boe Technology Group Co., Ltd. Thin film transistor and manufacturing method thereof, array substrate, display device
US9922692B2 (en) 2014-03-13 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including refresh circuit for memory cell
US10700098B2 (en) 2016-08-03 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11676971B2 (en) 2016-08-03 2023-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US11404447B2 (en) 2016-08-03 2022-08-02 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10373983B2 (en) 2016-08-03 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US10431672B1 (en) 2018-04-20 2019-10-01 International Business Machines Corporation Method of forming a III-V and Zn based finFET structure using low temperature deposition techniques
US10777665B2 (en) 2018-04-20 2020-09-15 International Business Machines Corporation III-V and Zn based finFET structure formed using low temperature deposition techniques

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