US20080182062A1 - Optimization of parameters for sealing organic emitting light diode (OLED) displays - Google Patents
Optimization of parameters for sealing organic emitting light diode (OLED) displays Download PDFInfo
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- US20080182062A1 US20080182062A1 US12/080,003 US8000308A US2008182062A1 US 20080182062 A1 US20080182062 A1 US 20080182062A1 US 8000308 A US8000308 A US 8000308A US 2008182062 A1 US2008182062 A1 US 2008182062A1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/23—Sheet including cover or casing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24777—Edge feature
Definitions
- the present invention relates to hermetically sealed glass packages that are suitable to protect thin film devices which are sensitive to the ambient environment.
- Some examples of such glass packages are organic emitting light diode (OLED) displays, sensors, and other optical devices.
- OLED organic emitting light diode
- the present invention is demonstrated using an OLED display as an example.
- OLEDs have been the subject of a considerable amount of research in recent years because of their use and potential use in a wide variety of electroluminescent devices. For instance, a single OLED can be used in a discrete light emitting device or an array of OLEDs can be used in lighting applications or flat-panel display applications (e.g., OLED displays).
- OLED displays are known to be very bright and to have a good color contrast and wide viewing angle.
- OLED displays and in particular the electrodes and organic layers located therein are susceptible to degradation resulting from interaction with oxygen and moisture leaking into the OLED display from the ambient environment. It is well known that the life of the OLED display can be significantly increased if the electrodes and organic layers located therein are hermetically sealed from the ambient environment. Unfortunately, in the past it has been very difficult to develop a sealing process to hermetically seal the OLED display.
- Today one way to seal the OLED display is to form a hermetic seal by melting a low temperature frit doped with a material that is highly absorbent at a specific wavelength of light.
- a high power laser is used to heat up and soften the frit which forms a hermetic seal between a cover glass with the frit located thereon and a substrate glass with OLEDs located thereon.
- the frit is typically ⁇ 1 mm wide and ⁇ 6-100 um thick. If the absorption and thickness of the frit is uniform then sealing can be done at constant laser energy and speed so as to provide a uniform temperature rise at the frit location.
- the present invention includes a hermetically sealed OLED display and method for manufacturing the hermetically sealed OLED display.
- the hermetically sealed OLED display is manufactured by depositing a frit (e.g., doped frit) onto a cover plate and by depositing OLEDs onto a substrate plate.
- a laser e.g., sealing apparatus
- a laser is then used to heat the frit in a manner where a substantially constant temperature is maintained within the frit along a sealing line while the frit melts and forms a hermetic seal which connects the cover plate to the substrate plate and also protects the OLEDs located between the cover plate and the substrate plate.
- sealing techniques described herein that enable the laser to heat the frit in a manner where a substantially constant temperature is maintained within the frit along the sealing line which is difficult to accomplish because the sealing line has regions occupied by electrodes that are connected to the OLEDS and regions that are free of the electrodes.
- the speed and/or power of a laser beam emitted from the laser is dynamically changed as needed to ensure that the frit is uniformly heated along the sealing line which has electrode occupied regions and electrode free regions.
- FIGS. 1A and 1B are respectively a top view and a cross-sectional side view illustrating the basic components of a hermetically sealed OLED display that can be made by using one or more of the sealing techniques of the present invention
- FIG. 3 is a cross-sectional side view of an OLED display being hermetically sealed by a first sealing technique in accordance with the present invention
- FIGS. 4A-4C are three diagrams that are used to help describe a second sealing technique that can be used to hermetically seal an OLED display in accordance with the present invention
- FIG. 5 is a cross-sectional side view of an OLED display being hermetically sealed by a third sealing technique in accordance with the present invention.
- FIG. 6 is a cross-sectional side view of an OLED display being hermetically sealed by a fourth sealing technique in accordance with the present invention.
- FIG. 8 is a cross-sectional side view of an OLED display being hermetically sealed by a sixth sealing technique in accordance with the present invention.
- FIGS. 9A-9C are three diagrams that are used to help describe a seventh sealing technique that can be used to hermetically seal an OLED display in accordance with the present invention.
- FIG. 10 is a cross-sectional side view of an OLED display which is used to show that each of the aforementioned sealing techniques may have to take into account the starting temperature and subsequent temperatures of the frit while manufacturing the hermetically sealed OLED display in accordance with the present invention.
- FIG. 11-13 are several diagrams used to help describe some exemplary ways one could manufacture an OLED display using one or more of the aforementioned sealing techniques in accordance with the present invention.
- FIGS. 1-10 there are disclosed in accordance with the present invention a hermetically sealed OLED display 100 and method 200 for manufacturing the OLED display 100 .
- the sealing techniques of the present invention are described below with respect to manufacturing the hermetically sealed OLED display 100 , it should be understood that the same or similar sealing techniques can be used to seal two glass plates to one another that can be used in a wide variety of applications and device. Accordingly, the sealing techniques of the present invention should not be construed in a limited manner.
- the OLEDs 104 are located within a perimeter of the hermetic seal 112 .
- the electrodes 106 which are connected the OLEDs 104 pass/extend through the hermetic seal 112 so they can connect to an external device (not shown). Again, it is the presence of the electrodes 106 which are often non-transparent metal electrodes 106 that makes it difficult to form a hermetic connection 112 between the cover plate 102 and the substrate plate 110 .
- the metal electrodes 106 have different patterns and different optical properties such that some of the laser energy from a sealing apparatus 114 (e.g., laser 114 ) is absorbed and/or reflected by the metal electrodes 106 which creates an uneven temperature distribution in the frit 108 during the sealing process which can lead to the formation of a non-hermetic connection between the cover plate 102 and the substrate plate 110 . How this problem is solved by using one or more of the sealing techniques of the present invention so it is possible to make the OLED display 100 is described below with respect to FIGS. 2-10 .
- the cover plate 102 and the substrate plate 110 are provided.
- the cover and substrate plates 102 and 110 are transparent glass plates like the ones manufactured and sold by Corning Incorporated under the brand names of Code 1737 glass or Eagle 2000TM glass.
- the cover and substrate plates 102 and 110 can be any transparent glass plates like for example the ones manufactured and sold by Asahi Glass Co. (e.g., OA10 glass and OA21 glass), Nippon Electric Glass Co., NHTechno and Samsung Corning Precision Glass Co.
- the frit 108 is deposited near the edges of the cover plate 102 .
- the frit 108 can be placed approximately 1 mm away from the free edges of the cover plate 102 .
- the frit 108 is a low temperature glass frit that contains one or more absorbing ions chosen from the group including iron, copper, vanadium, and neodymium (for example).
- the frit 108 may also be doped with a filler (e.g., inversion filler, additive filler) which lowers the coefficient of thermal expansion of the frit 108 so that it matches or substantially matches the coefficient of thermal expansions of the two glass plates 102 and 110 .
- the frit 108 can be pre-sintered to the cover plate 102 .
- the frit 108 which was deposited onto the cover plate 102 is heated so that it becomes attached to the cover plate 102 .
- a more detailed discussion about how one can pre-sinter the frit 108 to the cover plate 102 is provided below in the text just prior to the description associated with FIG. 11 .
- the OLEDs 104 and other circuitry including the electrodes 106 are deposited onto the substrate plate 110 .
- the typical OLED 104 includes one or more organic layers (not shown) and anode/cathode electrodes 106 .
- any known OLED 104 or future OLED 104 can be used in the OLED display 100 .
- another type of thin film device can be deposited in this step besides the OLEDs 104 if an OLED display 100 is not being made but instead another glass package like one used in an optical sensor is going to be made using the sealing technique(s) of the present invention.
- the sealing apparatus 114 heats the frit 108 using one or more of the sealing techniques of the present invention such that a substantially constant temperature is maintained in the frit 108 along the sealing line 116 while the frit 108 melts and forms the hermetic seal 112 which connects and bonds the cover plate 102 to the substrate plate 110 (see FIG. 1B ).
- the hermetic seal 112 also protects the OLEDs 104 by preventing oxygen and moisture in the ambient environment from entering into the OLED display 100 .
- the sealing techniques of the present invention enable the sealing apparatus 114 to maintain a constant temperature on the frit line 116 during the sealing process even though there are electrodes 106 that have different patterns and properties that pass under the frit 108 which melts and forms the hermetic seal 112 .
- the sealing techniques need to take into account several factors which can affect the rate of the heat diffusion and in turn the temperature of the frit 108 at the sealing point 116 .
- the typical frit 108 transmission can vary from 2% to 30% depending on its composition and thickness.
- the electrodes 106 depending on their composition can absorb or reflect the light, transmitted through the frit 108 .
- the thermal conductivity of the substrate plate 110 with and without deposited electrodes 106 often varies which affects the rate of the heat diffusion at the sealing point 116 .
- the temperature rise (T frit) in the frit 108 at any point along the sealing line 116 can be estimated as follows:
- Tfrit temperature rise in the frit 108
- P laser power of the laser 114
- v laser translation speed
- a the laser spot size
- D heat diffusivity in the substrate plate 110
- ⁇ (frit) percentage of the laser power absorbed by frit 108 on the first path
- R(electrode) reflectivity of the electrode 108
- e(electrode) is the percentage of laser power absorbed by electrode 108 .
- this equation represents an amount of energy absorbed by frit 108 on the first path, the amount of the laser energy transmitted through frit 108 and absorbed by the electrode 106 , and the amount of the laser energy transmitted through the frit 108 , reflected from the electrode 106 and absorbed by frit 108 on the second path (e.g., see FIG. 3 ).
- the equation is valid for semi-infinite volume heating it may not be exact to represent T(frit) dependence on the v (velocity) and K (thermal conductivity) but this equation does show the qualitative dependence of T(frit) on the values of these parameters.
- the equation also makes it clear that during the sealing process the temperature rise in the frit 108 can be made equal for the electrode-free regions and the electrode occupied regions along the sealing line 116 .
- the different sealing techniques that can ensure the sealing apparatus 114 uniformly heats the frit 108 along the sealing line 116 which has electrode-free regions and electrode occupied regions are described in detail below with respect to FIGS. 3-10 .
- the sealing technique is one where the laser 114 needs to dynamically change the power of the laser beam 108 at different points on the sealing line 116 to maintain a substantially constant temperature in the frit 108 along the sealing line 116 that has electrode occupied regions 218 a and electrode free regions 218 b .
- the laser 114 maintains a constant temperature in the frit 108 on the sealing line 116 by lowering the power of the laser beam 118 when the electrode occupied regions 218 a are present on the sealing line 116 and by increasing the power of the laser beam 118 when the electrode free regions 218 b are present on the sealing line 116 .
- the laser 114 may move the laser beam 118 at a third intermediate speed in the areas where there are electrodes 106 in close proximity to the sealing line 116 .
- This process which is also shown in FIG. 4B can be implemented regardless of whether the electrodes 106 are highly absorptive and/or highly reflective.
- a stage/support (not shown) which holds the OLED display 100 could be moved at different speeds under a stationary laser 114 to maintain a constant temperature within the frit 108 .
- FIG. 4C is a graph illustrating some experimental results that were obtained when two bare glass plates with no electrodes were sealed together using this sealing technique.
- the sealing technique is one where a high reflector 502 (e.g., mirror 502 ) is placed under the substrate plate 110 while the laser 114 emits the laser beam 118 to melt the frit 108 and form the hermetic seal 112 .
- the high reflector 502 helps to balance the power absorbed by the frit 108 regardless of whether the frit 108 is located over electrode occupied regions 218 a or electrode free regions 218 b .
- the temperature rise in the frit 108 at different points along the sealing line 116 can be represented as follows:
- T (frit)1 P/a 2 sqrt( vD )( ⁇ (frit)+(1 ⁇ (frit) e (electrode)+(1 ⁇ frit) R (electrode) ⁇ (frit))
- T (frit)2 P/a 2 sqrt( vD )( ⁇ (frit)+(1 ⁇ (frit))* R (reflector)* ⁇ (frit))
- the sealing technique is one where a partially reflective mask 602 is placed on top of the cover plate 102 while the laser 114 emits the laser beam 118 to melt and form the hermetic seal 112 .
- the partially reflective mask 602 has different patterns 604 a , 604 b . . . 604 d that represent different reflectivities of the mask 602 to compensate for the different properties of electrodes 106 .
- the partially reflective mask 602 helps to balance the power absorbed by the frit 108 regardless of whether the frit 108 is located over electrode occupied regions 218 a or electrode free regions 218 b.
- the sealing technique is one where the laser 114 seals at least a part of the frit line 116 in a first pass at the lowest power corresponding to the right sealing temperature along the line 116 and then finishes the sealing of the line 116 in a second pass at a higher power only at places which failed to reach the correct temperature during the first pass.
- a feedback mechanism similar to or like the one described below may be used if needed to determine which sections of the frit 108 did not reach the correct temperature during the first pass.
- the sealing technique is one that uses a feedback mechanism 802 to help ensure there is uniform heating within the frit 108 along the sealing line 116 during the formation of the hermetic seal 112 .
- the feedback mechanism 802 can be used to monitor the hot spot intensity of the sealing line 116 at a certain fixed wavelength.
- the hot spot originates from black body emission due to the temperature rise along the sealing line 116 because of the heating by the laser 114 .
- the emission spectrum is very broad and almost any of the wavelengths from 500-2000 nm could be used for this purpose.
- the feedback mechanism 100 monitors the on-line emission intensity, converts it to a temperature and optimizes one or more sealing parameters to ensure the temperature is uniform along the sealing line 116 regardless of whether the frit 108 is over electrode occupied regions 218 a or over electrode free regions 218 b .
- the feedback mechanism 802 can control the power of the laser 114 to make the temperature uniform along the sealing line 116 regardless of whether the frit 108 is over the electrode occupied regions 218 a or electrode free regions 218 b .
- the sealing technique is one where the beam profile of the laser beam 118 is modified by a circular aperture 902 located at the end of the laser 114 (see FIG. 9A ).
- the circular aperture 902 is sized to modify the laser beam 118 by blocking/defocusing a portion of that beam 118 such that a modified laser beam 118 a that heats the frit 108 along the sealing line 116 of the OLED display 100 (see FIG. 9B ). As can be seen in the graph shown in FIG.
- the circular aperture 902 modifies the gaussian shape of the laser beam 118 by clipping its tails.
- the defocused laser beam 118 a also has a reduced 1/e power level that can provide the needed coverage and needed power at the sealing line 116 while at the same time not to expose any of the devices (e.g., OLEDs 104 ) outside of the frit line 116 to extra heat generation which can permanently damage of the OLED display 100 .
- the circular aperture 902 can have a blocking circle (not shown) located in the middle thereof to further change the shape of the laser beam 118 (see FIG. 9C ). As can be seen in the graph shown in FIG.
- the modified laser beam 118 c has a shape that helps make the temperature uniform over the frit 108 which typically has more heat diffusion at its edges.
- An elliptical beam 118 causes uniform heating across the frit 108 and also enables gradual heating and cooling along the frit 108 , which helps to reduce residual stress.
- the OLED display 100 can be sealed by using the sealing techniques described above with respect to changing the power of the laser 114 (see FIG. 3 ) and with using the circular aperture 902 to modify the shape of the laser beam 118 (see FIGS. 9A-9C ).
- the starting point for sealing the frit 108 typically has a lower temperature than the remaining parts of the frit 108 that are located further down on the sealing line 116 . This is due to the fact that the frit 108 at the starting point is at room temperature while the rest of the frit 108 has an elevated temperature during the formation of the hermetic seal 112 (see FIG. 10 ). This means that sealing parameters of the laser 114 (for example) at the beginning of the frit 108 may need to be adjusted to take into account the differences in the surrounding temperatures.
- the technique that is described next can be used to increase the sealing speed of the laser 114 which could help improve the efficiency of any of the aforementioned sealing techniques. If a round laser spot is used then the maximum sealing speed would be in the range of ⁇ 10-11 mm/s. However, if one used an elliptical or slit like shaped laser beam 118 to heat the frit 108 , then this would likely result in increasing the speed one could use to seal the OLED display 100 provided that the power density of the elliptical shaped laser beam 118 is the same as the round shaped laser beam 118 .
- the power of the laser 114 needs to be increased proportionally as the spot area of the elliptical shaped laser beam 118 increases relative to a round shaped laser beam 118 . All of this would enable one to speed-up the sealing process by the ratio of the length to the width of the spot size of the elliptical shaped laser beam 118 .
- special care may be needed to take care of the corners in the OLED display 100 where the speed of the elliptical shaped laser beam 118 needs to go back to a slow regime (the same as for round beam).
- one may need to rotate the elliptical shaped laser beam 118 while the laser 114 is located over the corners of the OLED display 100 to properly seal the OLED display 100 .
- a LCD-type glass e.g. codes 1737 and Eagle 2000
- OLED organic light emitting device
- the frit 108 can be applied to the LCD glass plate 102 by screen-printing or by a programmable auger robot which provides a well-shaped pattern. Then, the LCD glass sample 102 with the frit pattern located thereon can be placed in a furnace which “fires” the frit 108 at a temperature that depends on the composition of the frit 108 .
- the frit 108 can contain one or more of the transition elements (vanadium, iron, nickel, etc.) that have a substantial absorption cross-section at 810 nm (for example) which matches the operating wavelength of an 810 nm laser 114 (for example).
- the frit 108 is pre-sintered and the organic binder mostly burns out. This step can be important because, otherwise, the organics from the frit 108 could evaporate and then precipitate inside the OLED display 100 during laser sealing.
- frit 108 If the frit 108 is too thick it will be able to absorb enough energy at the first surface to melt, but will shield the necessary energy needed to melt at the secondary surface on plate 110 . This usually results in poor or spotty bonding of the two glass substrates 102 and 110 .
- the cover plate 102 could go through a mild ultrasonic cleaning environment to remove any debris that has accumulated to this point.
- the typical solutions used here can be considerably milder than the ones used for cleaning display glass which has no additional deposition. During cleaning, the temperature can be kept lower to avoid degradation of deposited frit 108 .
- the pre-sintered cover plate 102 can be placed in a vacuum oven at a temperature of 100° C. for 6 or more hours. After removal from the oven the pre-sintered cover plate 102 can be placed in a clean room box to deter dust and debris from accumulating on it before performing the sealing process.
- the sealing process includes placing the cover plate 102 with a frit 108 on top of another glass plate 110 with OLEDs/electrodes 104 and 106 located on top in such a manner that the frit 108 and OLEDs/electrodes 104 and 106 are sandwiched between the two glass plates 102 and 110 .
- Mild pressure can be applied to the glass plates 102 and 110 to keep them in contact during the sealing process.
- the laser 114 focuses its beam 118 on the frit 108 through the cover plate 102 .
- the laser beam 118 can then be defocused to approximately 3.5 mm spot size to make the temperature gradient more gradual.
- the frit 108 needs a warm up and anneal phase before melting.
- the pre-sintered cover plate should be stored in an inert atmosphere to prevent re-adsorption of O 2 and H 2 0 before melting.
- the velocity of travel of the laser 114 to the frit pattern can range between 0.5 mm/s and 15 mm/s depending on the set parameters. Faster travel velocities would generally require more current to the diode laser 114 . For example, one could seal at velocities in the range of 0.5 and 2 mm/s with laser power in the range of 9 and 12 Watts.
- the power necessary varies depending on the absorption coefficient and thickness of the frit 108 . The necessary power is also affected if a reflective or absorbent layer is placed underneath the substrate plate 110 such as certain lead materials 502 (e.g., see FIG.
- the frit 108 can vary depending on the homogeneity of the frit along with the filler particle size. And, if the frit 108 does have filler particles that absorb the near IR wavelengths, then the frit 108 is somewhat transparent. This can adversely affect the way the frit absorbs and consequently melts to the display substrates 102 and 110 .
- FIG. 11 illustrates the concept of how the plates 102 and 110 are placed in reference to the laser 114 .
- Specifications of an exemplary lens system are included but are not a requirement for delivery of energy from the laser 114 .
- the laser beam 118 can be defocused to reduce the temperature gradient as the frit 108 is traversed by the laser 114 . It should be noted that if the gradient is too steep (focus is too tight) that the OLED display 100 may exhibit violent cracking resulting in immediate failure.
- the first approach is one where the plates 102 and 110 are placed on a steel block 1102 with a magnet 1104 on top of the plates 102 and 110 .
- the other approach is to place the display plates 102 and 110 between two clear silica discs 1106 a and 1106 b with low scratch/dig and extremely high flatness. These silica discs 1106 a and 1106 b can then be clamped in a variety of methods and are transparent to the near infrared irradiation. If the discs 1106 a and 1106 b are flat and extremely stiff, then relatively thin display sheets 102 and 110 can adhere to their shape maintaining flatness and direct contact with each other.
- the motion of a stage 108 which holds the plates 102 and 110 can be controlled by a computer (not shown) which runs programs written to trace the frit 108 that has been dispensed onto the display glass 102 .
- Most frit 108 patterns are rectangular in shape and have rounded corners. The radius of curvatures for the corners range between 0.5 mm and 4 mm and are necessary to reduce overheating in this area. Overheating can occur as the travel motion in the x direction is reduced while the y direction is increased and vice versa. If the defocus sealing beam 118 is approximately 3.5 mm, then there will likely be additional heating for a completely square corner. To negate this effect of overheating, velocity, power, or radius of the laser beam 118 can be adjusted. For example, this effect can be overcome solely by keeping a radius of curvature larger than the overlap of the defocus laser beam 118 . This is shown in FIG. 12 .
- any layer like the electrodes 106 that resides under it, that are reflective, will create an additional heat source because the laser beam 118 reflects back into the frit 108 . It is not a double dose but substantially more than what is intended. Also, some of these electrodes 106 can be absorptive in the near IR which means they can have some substantial heating when irradiated by the laser source 114 . When the electrodes 106 exhibit both properties, it creates a very difficult effect to overcome with a sealing regime. This effect is labeled as a power density per unit time. Because electrodes 106 are scattered and placed indeterminately of where the frit 108 is to be placed, it is necessary to manage the power density issue. As described above with the aforementioned sealing techniques of the present invention, there are several ways to manage this issue:
- One approach is to change the current to the diode laser 114 by decreasing the current where the electrodes 106 are and restoring it where they are not (see FIG. 3 ).
- Another approach is to change translation speed to accommodate over heating by increasing velocity where the electrodes 106 are present and reducing velocity where the electrodes 106 are not. It was first determined that there would be two individual velocities necessary to accomplish this, however, a third intermediate velocity may be needed for those areas where there are electrodes 106 in close proximity to the path of the frit 108 . This is most likely due to the overlap of the defocusing of the laser beam 118 (see FIGS. 4A , 4 B and 12 ).
- Yet another approach is to place a highly reflective front surface mirror 502 or create a mirror surface on the steel block 1102 in an effort to make the entire lower lying body reflective. This may eliminate large fluctuations in the power density as the beam 118 traverses these different layers (see FIG. 5 ).
- Still yet another approach is to place a mask over the display glass 102 which will reduce the excess light that comes from defocusing the laser beam 118 . Also, a reflective mask would prevent undesirable laser light from reaching electrodes, drivers and electroluminescence (EL) materials.
- EL electroluminescence
- the slowest speed can be used where there was no electrode(s) 106 are located in the seal path 116 or adjacent to the seal path 116 .
- the fastest speed can be used where electrode(s) 106 located in the seal path 116 or adjacent to the seal path 116 .
- An intermediate speed can be used speed when the frit 108 pattern covered is between electrodes 106 or is over a material that is slightly reflective or adjacent to these materials.
- FIG. 13 illustrates several different sealing paths 116 that can be traversed by the laser beam 118 to create the OLED display 100 .
- any of the aforementioned sealing techniques can be used to seal two glass sheets together without the aid of a frit.
- one of the glass sheets may be doped with the same material used to dope the frit if needed.
- the hermetic seal 112 has the following properties:
- glass plates 102 and 110 can be sealed to one another using the sealing techniques of the present invention.
- glass plates 102 and 110 made by companies like Asahi Glass Co. e.g., OA10 glass and OA21 glass
- Nippon Electric Glass Co. NHTechno and Samsung Corning Precision Glass Co.
- NHTechno NHTechno and Samsung Corning Precision Glass Co.
- the frit 108 that is pre-sintered to the cover plate 102 in accordance with step 206 can be sold as a unit to manufacturers of the OLED display 100 who can then install the OLEDs 104 and perform the final manufacturing step 208 at their facility using a localized heat source.
- the OLED display 100 can be an active OLED display 100 or a passive OLED display 100 .
- the electrodes 106 are described above as being non-transparent, it should be understood that the electrodes 106 can be either reflective, absorptive, transmissive or any combination thereof.
- ITO electrodes 106 can transmit more than they reflect or absorb.
- another aspect of the present invention is to control the cooling rate of the OLED display 100 after completing the heating step 208 .
- Abrupt and rapid cooling may cause large thermal strains leading to high elastic thermal stresses on the hermetic seal 112 and the sealed plates 102 and 110 .
- the suitable cooling rate depends on the size of the particular OLED display 100 to be sealed and the heat dissipation rate to the environment from the OLED display 100 .
Abstract
A hermetically sealed glass package and method for manufacturing the hermetically sealed glass package are described herein. In one embodiment, the hermetically sealed glass package is suitable to protect thin film devices which are sensitive to the ambient environment. Some examples of such glass packages are organic emitting light diode (OLED) displays, sensors, and other optical devices. The present invention is demonstrated using an OLED display as an example.
Description
- The present application is a divisional application of U.S. patent application Ser. No. 10/970,319, entitled “OPTIMIZATION OF PARAMETERS FOR SEALING ORGANIC EMITTING LIGHT DIODE (OLED) DISPLAYS” and filed on Oct. 20, 2004, now allowed. The present application claims priority under 35 U.S.C. § 121 of U.S. patent application Ser. No. 10/970,319. The present application further claims priority under 35 U.S.C. § 120 of U.S. patent application Ser. No. 11/095,144, filed on Mar. 30, 2005 and entitled “METHOD FOR BACKSIDE SEALING ORGANIC EMITTING LIGHT DIODE (OLED) DISPLAYS,” the content of which is relied upon and incorporated herein by reference in its entirety.
- 1. Field of the Invention
- The present invention relates to hermetically sealed glass packages that are suitable to protect thin film devices which are sensitive to the ambient environment. Some examples of such glass packages are organic emitting light diode (OLED) displays, sensors, and other optical devices. The present invention is demonstrated using an OLED display as an example.
- 2. Description of Related Art
- OLEDs have been the subject of a considerable amount of research in recent years because of their use and potential use in a wide variety of electroluminescent devices. For instance, a single OLED can be used in a discrete light emitting device or an array of OLEDs can be used in lighting applications or flat-panel display applications (e.g., OLED displays). OLED displays are known to be very bright and to have a good color contrast and wide viewing angle. However, OLED displays and in particular the electrodes and organic layers located therein are susceptible to degradation resulting from interaction with oxygen and moisture leaking into the OLED display from the ambient environment. It is well known that the life of the OLED display can be significantly increased if the electrodes and organic layers located therein are hermetically sealed from the ambient environment. Unfortunately, in the past it has been very difficult to develop a sealing process to hermetically seal the OLED display. Some of the factors that made it difficult to properly seal the OLED display are briefly mentioned below:
-
- The hermetic seal should provide a barrier for oxygen (10−3 cc/m2/day) and water (10−6 g/m2/day).
- The size of the hermetic seal should be minimal (e.g., <2 mm) so it does not have an adverse effect on size of the OLED display.
- The temperature generated during the sealing process should not damage the materials (e.g., electrodes and organic layers) within the OLED display. For instance, the first pixels of OLEDs which are located about 1-2 mm from the seal in the OLED display should not be heated to more than 100° C. during the sealing process.
- The gases released during sealing process should not contaminate the materials within the OLED display.
- The hermetic seal should enable electrical connections (e.g., thin-film chromium electrodes) to enter the OLED display.
- Today one way to seal the OLED display is to form a hermetic seal by melting a low temperature frit doped with a material that is highly absorbent at a specific wavelength of light. In particular, a high power laser is used to heat up and soften the frit which forms a hermetic seal between a cover glass with the frit located thereon and a substrate glass with OLEDs located thereon. The frit is typically ˜1 mm wide and ˜6-100 um thick. If the absorption and thickness of the frit is uniform then sealing can be done at constant laser energy and speed so as to provide a uniform temperature rise at the frit location. However, when the frit is relatively thin then 100% of the laser energy is not absorbed by the frit and some of the laser energy can be absorbed or reflected by metal electrodes that are attached to the OLEDs on the substrate glass. Since it is desirable to use thin frits and the metal electrodes have different reflectivity and absorption properties as well as different thermal conductivities from the bare substrate glass, this situation can create an uneven temperature distribution within the frit during the sealing process which can lead to a non-hermetic connection between the cover glass and the substrate glass. This sealing problem is solved by using one or more of the sealing techniques of the present invention.
- The present invention includes a hermetically sealed OLED display and method for manufacturing the hermetically sealed OLED display. Basically, the hermetically sealed OLED display is manufactured by depositing a frit (e.g., doped frit) onto a cover plate and by depositing OLEDs onto a substrate plate. A laser (e.g., sealing apparatus) is then used to heat the frit in a manner where a substantially constant temperature is maintained within the frit along a sealing line while the frit melts and forms a hermetic seal which connects the cover plate to the substrate plate and also protects the OLEDs located between the cover plate and the substrate plate. There are several sealing techniques described herein that enable the laser to heat the frit in a manner where a substantially constant temperature is maintained within the frit along the sealing line which is difficult to accomplish because the sealing line has regions occupied by electrodes that are connected to the OLEDS and regions that are free of the electrodes. For instance in one sealing technique, the speed and/or power of a laser beam emitted from the laser is dynamically changed as needed to ensure that the frit is uniformly heated along the sealing line which has electrode occupied regions and electrode free regions.
- A more complete understanding of the present invention may be had by reference to the following detailed description when taken in conjunction with the accompanying drawings wherein:
-
FIGS. 1A and 1B are respectively a top view and a cross-sectional side view illustrating the basic components of a hermetically sealed OLED display that can be made by using one or more of the sealing techniques of the present invention; -
FIG. 2 is a flowchart illustrating the steps of a preferred method for manufacturing the hermetically sealed OLED display shown inFIGS. 1A and 1B ; -
FIG. 3 is a cross-sectional side view of an OLED display being hermetically sealed by a first sealing technique in accordance with the present invention; -
FIGS. 4A-4C are three diagrams that are used to help describe a second sealing technique that can be used to hermetically seal an OLED display in accordance with the present invention; -
FIG. 5 is a cross-sectional side view of an OLED display being hermetically sealed by a third sealing technique in accordance with the present invention; -
FIG. 6 is a cross-sectional side view of an OLED display being hermetically sealed by a fourth sealing technique in accordance with the present invention; -
FIG. 7 is a cross-sectional side view of an OLED display being hermetically sealed by a fifth sealing technique in accordance with the present invention; -
FIG. 8 is a cross-sectional side view of an OLED display being hermetically sealed by a sixth sealing technique in accordance with the present invention; -
FIGS. 9A-9C are three diagrams that are used to help describe a seventh sealing technique that can be used to hermetically seal an OLED display in accordance with the present invention; -
FIG. 10 is a cross-sectional side view of an OLED display which is used to show that each of the aforementioned sealing techniques may have to take into account the starting temperature and subsequent temperatures of the frit while manufacturing the hermetically sealed OLED display in accordance with the present invention; and -
FIG. 11-13 are several diagrams used to help describe some exemplary ways one could manufacture an OLED display using one or more of the aforementioned sealing techniques in accordance with the present invention. - Referring to
FIGS. 1-10 , there are disclosed in accordance with the present invention a hermetically sealedOLED display 100 andmethod 200 for manufacturing theOLED display 100. Although the sealing techniques of the present invention are described below with respect to manufacturing the hermetically sealedOLED display 100, it should be understood that the same or similar sealing techniques can be used to seal two glass plates to one another that can be used in a wide variety of applications and device. Accordingly, the sealing techniques of the present invention should not be construed in a limited manner. - Referring to
FIGS. 1A and 1B , there are respectively show a top view and a cross-sectional side view that illustrate the basic components of the hermetically sealedOLED display 100. TheOLED display 100 includes a multilayer sandwich of a cover plate 102 (e.g., glass plate 102), one ormore OLEDs 104/electrodes 106, a doped frit 108 and a substrate plate 110 (e.g., glass plate 110). TheOLED display 100 has a hermetic seal 112 which was formed from the frit 108 that protects theOLEDs 104 located between thecover plate 102 and thesubstrate plate 110. The hermetic seal 112 is typically located just inside the outer edges of theOLED display 100. And, theOLEDs 104 are located within a perimeter of the hermetic seal 112. As can be seen, theelectrodes 106 which are connected theOLEDs 104 pass/extend through the hermetic seal 112 so they can connect to an external device (not shown). Again, it is the presence of theelectrodes 106 which are oftennon-transparent metal electrodes 106 that makes it difficult to form a hermetic connection 112 between thecover plate 102 and thesubstrate plate 110. This is because themetal electrodes 106 have different patterns and different optical properties such that some of the laser energy from a sealing apparatus 114 (e.g., laser 114) is absorbed and/or reflected by themetal electrodes 106 which creates an uneven temperature distribution in the frit 108 during the sealing process which can lead to the formation of a non-hermetic connection between thecover plate 102 and thesubstrate plate 110. How this problem is solved by using one or more of the sealing techniques of the present invention so it is possible to make theOLED display 100 is described below with respect toFIGS. 2-10 . - Referring to
FIG. 2 , there is a flowchart illustrating the steps of thepreferred method 200 for manufacturing the hermetically sealedOLED display 100. Beginning atsteps cover plate 102 and thesubstrate plate 110 are provided. In the preferred embodiment, the cover andsubstrate plates Eagle 2000™ glass. Alternatively, the cover andsubstrate plates - At
step 206, thefrit 108 is deposited near the edges of thecover plate 102. For example, thefrit 108 can be placed approximately 1 mm away from the free edges of thecover plate 102. In the preferred embodiment, thefrit 108 is a low temperature glass frit that contains one or more absorbing ions chosen from the group including iron, copper, vanadium, and neodymium (for example). The frit 108 may also be doped with a filler (e.g., inversion filler, additive filler) which lowers the coefficient of thermal expansion of the frit 108 so that it matches or substantially matches the coefficient of thermal expansions of the twoglass plates exemplary frits 108 that can be used in this application reference is made to U.S. patent application Ser. No. 10/823,331 entitled “Glass Package that is Hermetically Sealed with a Frit and Method of Fabrication”. The contents of this document are incorporated by reference herein. - In addition, the
frit 108 can be pre-sintered to thecover plate 102. To accomplish this, thefrit 108 which was deposited onto thecover plate 102 is heated so that it becomes attached to thecover plate 102. A more detailed discussion about how one can pre-sinter the frit 108 to thecover plate 102 is provided below in the text just prior to the description associated withFIG. 11 . - At
step 208, theOLEDs 104 and other circuitry including theelectrodes 106 are deposited onto thesubstrate plate 110. Thetypical OLED 104 includes one or more organic layers (not shown) and anode/cathode electrodes 106. However, it should be readily appreciated by those skilled in the art that any knownOLED 104 orfuture OLED 104 can be used in theOLED display 100. In addition, it should be appreciated that another type of thin film device can be deposited in this step besides theOLEDs 104 if anOLED display 100 is not being made but instead another glass package like one used in an optical sensor is going to be made using the sealing technique(s) of the present invention. - At
step 210, the sealing apparatus 114 (e.g., laser 114) heats the frit 108 using one or more of the sealing techniques of the present invention such that a substantially constant temperature is maintained in thefrit 108 along thesealing line 116 while the frit 108 melts and forms the hermetic seal 112 which connects and bonds thecover plate 102 to the substrate plate 110 (seeFIG. 1B ). The hermetic seal 112 also protects theOLEDs 104 by preventing oxygen and moisture in the ambient environment from entering into theOLED display 100. - The sealing techniques of the present invention enable the
sealing apparatus 114 to maintain a constant temperature on thefrit line 116 during the sealing process even though there areelectrodes 106 that have different patterns and properties that pass under the frit 108 which melts and forms the hermetic seal 112. However, to accomplish this the sealing techniques need to take into account several factors which can affect the rate of the heat diffusion and in turn the temperature of the frit 108 at thesealing point 116. First, thetypical frit 108 transmission can vary from 2% to 30% depending on its composition and thickness. Secondly, theelectrodes 106 depending on their composition can absorb or reflect the light, transmitted through thefrit 108. Thirdly, the thermal conductivity of thesubstrate plate 110 with and without depositedelectrodes 106 often varies which affects the rate of the heat diffusion at thesealing point 116. In general, the temperature rise (T frit) in the frit 108 at any point along thesealing line 116 can be estimated as follows: -
Tfrit˜P/a2sqrt(vD)(ε(frit)+(1−ε(frit)e(electrode)+(1−εfrit)R(electrode)ε(frit)) - where Tfrit is temperature rise in the
frit 108, P is laser power of thelaser 114, v is laser translation speed, a is the laser spot size, D is heat diffusivity in thesubstrate plate 110, ε(frit) is percentage of the laser power absorbed byfrit 108 on the first path, R(electrode) is reflectivity of theelectrode 108 and e(electrode) is the percentage of laser power absorbed byelectrode 108. - As can be seen, this equation represents an amount of energy absorbed by
frit 108 on the first path, the amount of the laser energy transmitted throughfrit 108 and absorbed by theelectrode 106, and the amount of the laser energy transmitted through thefrit 108, reflected from theelectrode 106 and absorbed byfrit 108 on the second path (e.g., seeFIG. 3 ). Even though the equation is valid for semi-infinite volume heating it may not be exact to represent T(frit) dependence on the v (velocity) and K (thermal conductivity) but this equation does show the qualitative dependence of T(frit) on the values of these parameters. The equation also makes it clear that during the sealing process the temperature rise in the frit 108 can be made equal for the electrode-free regions and the electrode occupied regions along thesealing line 116. The different sealing techniques that can ensure thesealing apparatus 114 uniformly heats thefrit 108 along thesealing line 116 which has electrode-free regions and electrode occupied regions are described in detail below with respect toFIGS. 3-10 . - Referring to
FIG. 3 , there is a cross-sectional side view of theOLED display 100 being hermetically sealed by one of the sealing techniques in accordance with the present invention. In this embodiment, the sealing technique is one where thelaser 114 needs to dynamically change the power of thelaser beam 108 at different points on thesealing line 116 to maintain a substantially constant temperature in thefrit 108 along thesealing line 116 that has electrode occupiedregions 218 a and electrodefree regions 218 b. In particular, thelaser 114 maintains a constant temperature in thefrit 108 on thesealing line 116 by lowering the power of thelaser beam 118 when the electrode occupiedregions 218 a are present on thesealing line 116 and by increasing the power of thelaser beam 118 when the electrodefree regions 218 b are present on thesealing line 116. - Referring to
FIG. 4A , there is a diagram which is used to help describe a second sealing technique that can be used to hermetically seal an OLED display in accordance with the present invention. In this embodiment, the sealing technique used is one where thelaser 114 dynamically changes the speed (v) of thelaser beam 108 to maintain a substantially constant temperature in thefrit 108 along thesealing line 116 that has electrode occupiedregions 218 a and electrodefree regions 218 b. For instance, thelaser 114 can maintain a constant temperature in thefrit 108 on thesealing line 116 by moving thelaser beam 118 faster when it is over the electrode occupiedregions 218 a and by movinglaser beam 118 slower when it is over electrodefree regions 218 b. In fact, thelaser 114 may move thelaser beam 118 at a third intermediate speed in the areas where there areelectrodes 106 in close proximity to thesealing line 116. This process which is also shown inFIG. 4B can be implemented regardless of whether theelectrodes 106 are highly absorptive and/or highly reflective. Alternatively, instead of moving thelaser 114 over astationary OLED display 100, a stage/support (not shown) which holds theOLED display 100 could be moved at different speeds under astationary laser 114 to maintain a constant temperature within thefrit 108.FIG. 4C is a graph illustrating some experimental results that were obtained when two bare glass plates with no electrodes were sealed together using this sealing technique. - Referring to
FIG. 5 , there is a cross-sectional side view of theOLED display 100 being hermetically sealed by yet another one of the sealing techniques in accordance with the present invention. In this embodiment, the sealing technique is one where a high reflector 502 (e.g., mirror 502) is placed under thesubstrate plate 110 while thelaser 114 emits thelaser beam 118 to melt thefrit 108 and form the hermetic seal 112. Thehigh reflector 502 helps to balance the power absorbed by thefrit 108 regardless of whether thefrit 108 is located over electrode occupiedregions 218 a or electrodefree regions 218 b. For example, the temperature rise in the frit 108 at different points along thesealing line 116 can be represented as follows: - At the electrode occupied
regions 218 a: -
T(frit)1=P/a 2sqrt(vD)(ε(frit)+(1−ε(frit)e(electrode)+(1εfrit)R(electrode)ε(frit)) - And, at the electrode
free regions 218 b -
T(frit)2=P/a 2sqrt(vD)(ε(frit)+(1−ε(frit))*R(reflector)*ε(frit)) - As can be seen, it is possible to decrease the difference T(frit)1−T(frit)2 by using the
high reflector 502. The difference would depend on the optical parameters and properties of theelectrodes 106. It should be appreciated that in this sealing technique, the power and/or speed of thelaser beam 118 can be maintained at a constant or dynamically changed. - Referring to
FIG. 6 , there is a cross-sectional side view of theOLED display 100 being hermetically sealed by yet another one of the sealing techniques in accordance with the present invention. In this embodiment, the sealing technique is one where a partiallyreflective mask 602 is placed on top of thecover plate 102 while thelaser 114 emits thelaser beam 118 to melt and form the hermetic seal 112. The partiallyreflective mask 602 hasdifferent patterns mask 602 to compensate for the different properties ofelectrodes 106. In this way, the partiallyreflective mask 602 helps to balance the power absorbed by thefrit 108 regardless of whether thefrit 108 is located over electrode occupiedregions 218 a or electrodefree regions 218 b. - Referring to
FIG. 7 , there is a cross-sectional side view of theOLED display 100 being hermetically sealed by yet another one of the sealing techniques in accordance with the present invention. In this embodiment, the sealing technique is one where thelaser 114 seals at least a part of thefrit line 116 in a first pass at the lowest power corresponding to the right sealing temperature along theline 116 and then finishes the sealing of theline 116 in a second pass at a higher power only at places which failed to reach the correct temperature during the first pass. A feedback mechanism similar to or like the one described below may be used if needed to determine which sections of the frit 108 did not reach the correct temperature during the first pass. - Referring to
FIG. 8 , there is a cross-sectional side view of theOLED display 100 being hermetically sealed by yet another one of the sealing techniques in accordance with the present invention. In this embodiment, the sealing technique is one that uses afeedback mechanism 802 to help ensure there is uniform heating within thefrit 108 along thesealing line 116 during the formation of the hermetic seal 112. Thefeedback mechanism 802 can be used to monitor the hot spot intensity of thesealing line 116 at a certain fixed wavelength. The hot spot originates from black body emission due to the temperature rise along thesealing line 116 because of the heating by thelaser 114. The emission spectrum is very broad and almost any of the wavelengths from 500-2000 nm could be used for this purpose. In one embodiment, thefeedback mechanism 100 monitors the on-line emission intensity, converts it to a temperature and optimizes one or more sealing parameters to ensure the temperature is uniform along thesealing line 116 regardless of whether thefrit 108 is over electrode occupiedregions 218 a or over electrodefree regions 218 b. For instance, thefeedback mechanism 802 can control the power of thelaser 114 to make the temperature uniform along thesealing line 116 regardless of whether thefrit 108 is over the electrode occupiedregions 218 a or electrodefree regions 218 b. There are many different ways one can use thefeedback mechanism 802 some of which are described below: -
- The
feedback mechanism 100 can monitor the temperature at different locations on thesealing line 116 while thelaser 114 seals an unknownsample OLED display 100. Thefeedback mechanism 100 modifies the laser speed or power at certain locations along thesealing line 116 in order to keep the temperature constant within thefrit 108 while sealing thesample OLED display 100. Thelaser 114 can then apply these conditions to seal similar OLED displays 100. - The
feedback mechanism 100 can “actively” monitor the temperature at different locations on thesealing line 116 while thelaser 114 seals theOLED display 100. Thefeedback mechanism 100 also modifies the laser speed or power at certain locations along thesealing line 116 to keep the temperature constant within thefrit 108 while sealing theOLED display 100.
- The
- Referring to
FIGS. 9A-9C , there are different views illustrating how thelaser 114 can be used to hermetically seal theOLED display 100 using yet another sealing technique in accordance with the present invention. In this embodiment, the sealing technique is one where the beam profile of thelaser beam 118 is modified by acircular aperture 902 located at the end of the laser 114 (seeFIG. 9A ). Thecircular aperture 902 is sized to modify thelaser beam 118 by blocking/defocusing a portion of thatbeam 118 such that a modifiedlaser beam 118 a that heats thefrit 108 along thesealing line 116 of the OLED display 100 (seeFIG. 9B ). As can be seen in the graph shown inFIG. 9B , thecircular aperture 902 modifies the gaussian shape of thelaser beam 118 by clipping its tails. The defocusedlaser beam 118 a also has a reduced 1/e power level that can provide the needed coverage and needed power at thesealing line 116 while at the same time not to expose any of the devices (e.g., OLEDs 104) outside of thefrit line 116 to extra heat generation which can permanently damage of theOLED display 100. In an alternative embodiment, thecircular aperture 902 can have a blocking circle (not shown) located in the middle thereof to further change the shape of the laser beam 118 (seeFIG. 9C ). As can be seen in the graph shown inFIG. 9C , the modifiedlaser beam 118 c has a shape that helps make the temperature uniform over the frit 108 which typically has more heat diffusion at its edges. Anelliptical beam 118 causes uniform heating across thefrit 108 and also enables gradual heating and cooling along thefrit 108, which helps to reduce residual stress. - It should be appreciated that more than one of the aforementioned sealing techniques can be used at the same time to form the hermetic seal 112 in the
OLED display 100. For instance, theOLED display 100 can be sealed by using the sealing techniques described above with respect to changing the power of the laser 114 (seeFIG. 3 ) and with using thecircular aperture 902 to modify the shape of the laser beam 118 (seeFIGS. 9A-9C ). - Moreover, it should be appreciated that in the sealing process the starting point for sealing the
frit 108 typically has a lower temperature than the remaining parts of the frit 108 that are located further down on thesealing line 116. This is due to the fact that the frit 108 at the starting point is at room temperature while the rest of thefrit 108 has an elevated temperature during the formation of the hermetic seal 112 (seeFIG. 10 ). This means that sealing parameters of the laser 114 (for example) at the beginning of the frit 108 may need to be adjusted to take into account the differences in the surrounding temperatures. - The technique that is described next can be used to increase the sealing speed of the
laser 114 which could help improve the efficiency of any of the aforementioned sealing techniques. If a round laser spot is used then the maximum sealing speed would be in the range of ˜10-11 mm/s. However, if one used an elliptical or slit like shapedlaser beam 118 to heat thefrit 108, then this would likely result in increasing the speed one could use to seal theOLED display 100 provided that the power density of the elliptical shapedlaser beam 118 is the same as the round shapedlaser beam 118. In other words, the power of thelaser 114 needs to be increased proportionally as the spot area of the elliptical shapedlaser beam 118 increases relative to a round shapedlaser beam 118. All of this would enable one to speed-up the sealing process by the ratio of the length to the width of the spot size of the elliptical shapedlaser beam 118. However, special care may be needed to take care of the corners in theOLED display 100 where the speed of the elliptical shapedlaser beam 118 needs to go back to a slow regime (the same as for round beam). Alternatively, one may need to rotate the elliptical shapedlaser beam 118 while thelaser 114 is located over the corners of theOLED display 100 to properly seal theOLED display 100. - Described below are some different ways one could hermetically seal a LCD-type glass (e.g. codes 1737 and Eagle2000) to an organic light emitting device (OLED) substrate using the aforementioned sealing techniques. For instance, the
frit 108 can be applied to theLCD glass plate 102 by screen-printing or by a programmable auger robot which provides a well-shaped pattern. Then, theLCD glass sample 102 with the frit pattern located thereon can be placed in a furnace which “fires” the frit 108 at a temperature that depends on the composition of thefrit 108. Again, thefrit 108 can contain one or more of the transition elements (vanadium, iron, nickel, etc.) that have a substantial absorption cross-section at 810 nm (for example) which matches the operating wavelength of an 810 nm laser 114 (for example). During this heating, thefrit 108 is pre-sintered and the organic binder mostly burns out. This step can be important because, otherwise, the organics from the frit 108 could evaporate and then precipitate inside theOLED display 100 during laser sealing. - After the
frit 108 is pre-sintered, it can be ground so that the height variation does not exceed 2-4 μm with a target height of 12-15 um. If the height variation is larger, the gap may not close when the frit 108 melts during laser sealing or the gap may introduce stresses which can crack thesubstrates Frit 108 height is an important variable which allows theplates laser beam 118 can first traverse thecover plate 102 that has thepre-sintered frit 108. If thefrit 108 is too thin it does not leave enough material to absorb the laser irradiation resulting in failure. If thefrit 108 is too thick it will be able to absorb enough energy at the first surface to melt, but will shield the necessary energy needed to melt at the secondary surface onplate 110. This usually results in poor or spotty bonding of the twoglass substrates - After the
pre-sintered frit 108 is ground, thecover plate 102 could go through a mild ultrasonic cleaning environment to remove any debris that has accumulated to this point. The typical solutions used here can be considerably milder than the ones used for cleaning display glass which has no additional deposition. During cleaning, the temperature can be kept lower to avoid degradation of depositedfrit 108. - After cleaning, a final processing step can be performed to remove residual moisture. The
pre-sintered cover plate 102 can be placed in a vacuum oven at a temperature of 100° C. for 6 or more hours. After removal from the oven thepre-sintered cover plate 102 can be placed in a clean room box to deter dust and debris from accumulating on it before performing the sealing process. - The sealing process includes placing the
cover plate 102 with a frit 108 on top of anotherglass plate 110 with OLEDs/electrodes frit 108 and OLEDs/electrodes glass plates glass plates laser 114 focuses itsbeam 118 on the frit 108 through thecover plate 102. Thelaser beam 118 can then be defocused to approximately 3.5 mm spot size to make the temperature gradient more gradual. The frit 108 needs a warm up and anneal phase before melting. In addition the pre-sintered cover plate should be stored in an inert atmosphere to prevent re-adsorption of O2 andH 20 before melting. The velocity of travel of thelaser 114 to the frit pattern can range between 0.5 mm/s and 15 mm/s depending on the set parameters. Faster travel velocities would generally require more current to thediode laser 114. For example, one could seal at velocities in the range of 0.5 and 2 mm/s with laser power in the range of 9 and 12 Watts. The power necessary varies depending on the absorption coefficient and thickness of thefrit 108. The necessary power is also affected if a reflective or absorbent layer is placed underneath thesubstrate plate 110 such as certain lead materials 502 (e.g., seeFIG. 5 ). It is also believed that a faster sealing regime can occur if power density per unit time is increased. As described above, thefrit 108 can vary depending on the homogeneity of the frit along with the filler particle size. And, if thefrit 108 does have filler particles that absorb the near IR wavelengths, then thefrit 108 is somewhat transparent. This can adversely affect the way the frit absorbs and consequently melts to thedisplay substrates -
FIG. 11 illustrates the concept of how theplates laser 114. Specifications of an exemplary lens system are included but are not a requirement for delivery of energy from thelaser 114. Again, thelaser beam 118 can be defocused to reduce the temperature gradient as thefrit 108 is traversed by thelaser 114. It should be noted that if the gradient is too steep (focus is too tight) that theOLED display 100 may exhibit violent cracking resulting in immediate failure. - There are two exemplary strategies shown in
FIG. 11 that can be used to hold thecover plate 102 in close contact with theglass plate 110. The first approach is one where theplates steel block 1102 with amagnet 1104 on top of theplates display plates clear silica discs silica discs discs thin display sheets - The motion of a
stage 108 which holds theplates display glass 102. Most frit 108 patterns are rectangular in shape and have rounded corners. The radius of curvatures for the corners range between 0.5 mm and 4 mm and are necessary to reduce overheating in this area. Overheating can occur as the travel motion in the x direction is reduced while the y direction is increased and vice versa. If thedefocus sealing beam 118 is approximately 3.5 mm, then there will likely be additional heating for a completely square corner. To negate this effect of overheating, velocity, power, or radius of thelaser beam 118 can be adjusted. For example, this effect can be overcome solely by keeping a radius of curvature larger than the overlap of thedefocus laser beam 118. This is shown inFIG. 12 . - Because the
frit 108 is to some degree transparent, any layer like theelectrodes 106 that resides under it, that are reflective, will create an additional heat source because thelaser beam 118 reflects back into thefrit 108. It is not a double dose but substantially more than what is intended. Also, some of theseelectrodes 106 can be absorptive in the near IR which means they can have some substantial heating when irradiated by thelaser source 114. When theelectrodes 106 exhibit both properties, it creates a very difficult effect to overcome with a sealing regime. This effect is labeled as a power density per unit time. Becauseelectrodes 106 are scattered and placed indeterminately of where thefrit 108 is to be placed, it is necessary to manage the power density issue. As described above with the aforementioned sealing techniques of the present invention, there are several ways to manage this issue: - One approach is to change the current to the
diode laser 114 by decreasing the current where theelectrodes 106 are and restoring it where they are not (seeFIG. 3 ). - Another approach is to change translation speed to accommodate over heating by increasing velocity where the
electrodes 106 are present and reducing velocity where theelectrodes 106 are not. It was first determined that there would be two individual velocities necessary to accomplish this, however, a third intermediate velocity may be needed for those areas where there areelectrodes 106 in close proximity to the path of thefrit 108. This is most likely due to the overlap of the defocusing of the laser beam 118 (seeFIGS. 4A , 4B and 12). - Yet another approach is to place a highly reflective
front surface mirror 502 or create a mirror surface on thesteel block 1102 in an effort to make the entire lower lying body reflective. This may eliminate large fluctuations in the power density as thebeam 118 traverses these different layers (seeFIG. 5 ). - Still yet another approach is to place a mask over the
display glass 102 which will reduce the excess light that comes from defocusing thelaser beam 118. Also, a reflective mask would prevent undesirable laser light from reaching electrodes, drivers and electroluminescence (EL) materials. - The idea of managing the power density of the
laser 114 during the sealing process first arose when attempts were made to sealglass plates laser beam 118. In some experiments, three speeds were used to complete the loop around theplates seal path 116 or adjacent to theseal path 116. The fastest speed can be used where electrode(s) 106 located in theseal path 116 or adjacent to theseal path 116. An intermediate speed can be used speed when the frit 108 pattern covered is betweenelectrodes 106 or is over a material that is slightly reflective or adjacent to these materials.FIG. 13 illustrates severaldifferent sealing paths 116 that can be traversed by thelaser beam 118 to create theOLED display 100. - Following are some of the different advantages and features of the present invention:
- It should be appreciated that any of the aforementioned sealing techniques can be used to seal two glass sheets together without the aid of a frit. In this embodiment, one of the glass sheets may be doped with the same material used to dope the frit if needed.
- The hermetic seal 112 has the following properties:
-
- Good thermal expansion match to
glass plates - Low softening temperature.
- Good chemical and water durability.
- Good bonding to
glass plates - Good bonding to metal leads 106 (e.g., anode and cathode electrodes 106).
- Dense with very low porosity.
- Good thermal expansion match to
- It is important to understand that other types of
glass plates EAGLE 2000™ glass plates can be sealed to one another using the sealing techniques of the present invention. For example,glass plates - There are other considerations which should also be taken into account in the present invention like making sure there is a right match between the CTEs of the sealed
glasses frit 108. And, making sure there is a right match between the viscosities (e.g., strain, softening points) of the sealedglasses frit 108. - It should be noted that the frit 108 that is pre-sintered to the
cover plate 102 in accordance withstep 206 can be sold as a unit to manufacturers of theOLED display 100 who can then install theOLEDs 104 and perform thefinal manufacturing step 208 at their facility using a localized heat source. - The
OLED display 100 can be anactive OLED display 100 or apassive OLED display 100. - Although the
electrodes 106 are described above as being non-transparent, it should be understood that theelectrodes 106 can be either reflective, absorptive, transmissive or any combination thereof. For example,ITO electrodes 106 can transmit more than they reflect or absorb. - It should be noted that another aspect of the present invention is to control the cooling rate of the
OLED display 100 after completing theheating step 208. Abrupt and rapid cooling may cause large thermal strains leading to high elastic thermal stresses on the hermetic seal 112 and the sealedplates particular OLED display 100 to be sealed and the heat dissipation rate to the environment from theOLED display 100. - Although several embodiments of the present invention has been illustrated in the accompanying Drawings and described in the foregoing Detailed Description, it should be understood that the invention is not limited to the embodiments disclosed, but is capable of numerous rearrangements, modifications and substitutions without departing from the spirit of the invention as set forth and defined by the following claims.
Claims (25)
1. A glass package comprising:
a cover plate;
at least one thin film device;
a substrate plate; and
a frit that was heated by a sealing apparatus in a manner where a substantially constant temperature was maintained in said frit along a sealing line that has regions free of electrodes and regions occupied by electrodes which are connected to said at least one thin film device while said frit melted and formed a hermetic seal which connects said cover plate to said substrate plate and also protects said at least one thin film device located between said cover plate and said substrate plate.
2. The glass package of claim 1 , wherein said frit is glass doped with a material that is absorbent at a specific wavelength of light.
3. The glass package of claim 1 , wherein said electrodes are metal non-transparent electrodes that have different patterns and different optical properties.
4. The glass package of claim 1 , wherein said electrodes are reflective, absorptive, transmissive or any combination thereof.
5. The glass package of claim 1 , wherein said sealing apparatus emits a laser beam used to melt said frit where a speed of the laser beam is dynamically changed in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
6. The glass package of claim 1 , wherein said sealing apparatus dynamically changes a power of a laser beam used to melt said frit in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
7. The glass package of claim 1 , wherein a reflector is placed under said substrate while said sealing apparatus emits a laser beam through said cover plate to melt said frit in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
8. The glass package of claim 1 , wherein a partially reflective mask is placed on top of said cover plate while said sealing apparatus emits a laser beam through said partially reflective mask and said cover plate to melt said frit in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
9. The glass package of claim 1 , wherein said sealing apparatus emits a lower power laser beam used to melt said frit along the sealing line during a first pass and then said sealing apparatus emits a higher power laser beam during a second pass only at portions of said frit along the sealing line which did not reach a correct temperature during the first pass of said lower power laser beam.
10. The glass package of claim 1 , wherein said sealing apparatus uses an elliptical focusing lens to emit an elliptical shaped laser beam to melt said frit in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
11. The glass package of claim 1 , wherein said sealing apparatus uses a focusing lens and a specially shaped aperture to emit a defocused laser beam to melt said frit in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
12. The glass package of claim 1 , wherein a feedback mechanism is used to optimize an operation of said sealing apparatus so as to melt said frit in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
13. The glass package of claim 1 , wherein a mask is placed on top of said cover plate while said sealing apparatus emits a laser beam through a slit in said mask and said cover plate to melt said frit in a manner that maintains the substantially constant temperature in said frit along the sealing line which has the electrode free regions and the electrode occupied regions.
14. A glass package comprising:
a cover plate;
at least one thin film device; and
a substrate plate, wherein a portion of said substrate plate is heated by a sealing apparatus in a manner where a substantially constant temperature was maintained in the portion along a sealing line that has regions free of electrodes and regions occupied by electrodes which are connected to said at least one thin film device while said portion melts and forms a hermetic seal which connects said cover plate to said substrate plate and also protects said at least one thin film device located between said cover plate and said substrate plate.
15. The glass package of claim 14 , wherein said substrate plate is glass doped with a material that is absorbent at a specific wavelength of light.
16. The glass package of claim 14 , wherein said electrodes are metal non-transparent electrodes that have different patterns and different optical properties.
17. The glass package of claim 14 , wherein said electrodes are reflective, absorptive, transmissive or any combination thereof.
18. The glass package of claim 14 , wherein said sealing apparatus emits a laser beam used to melt said portion of said substrate plate where a speed of the laser beam is dynamically changed in a manner that maintains the substantially constant temperature in said portion of said substrate plate along the sealing line which has the electrode free regions and the electrode occupied regions.
19. The glass package of claim 14 , wherein said sealing apparatus dynamically changes a power of a laser beam used to melt said portion of said substrate plate in a manner that maintains the substantially constant temperature in said portion of said substrate plate along the sealing line which has the electrode free regions and the electrode occupied regions.
20. The glass package of claim 14 , wherein a reflector is placed under said substrate while said sealing apparatus emits a laser beam through said cover plate to melt said portion of said substrate plate in a manner that maintains the substantially constant temperature in said portion of said substrate plate along the sealing line which has the electrode free regions and the electrode occupied regions.
21. The glass package of claim 14 , wherein a partially reflective mask is placed on top of said cover plate while said sealing apparatus emits a laser beam through said partially reflective mask and said cover plate to melt said portion of said substrate plate in a manner that maintains the substantially constant temperature in said portion of said substrate plate along the sealing line which has the electrode free regions and the electrode occupied regions.
22. The glass package of claim 14 , wherein said sealing apparatus emits a lower power laser beam used to melt said portion of said substrate plate along the sealing line during a first pass and then said sealing apparatus emits a higher power laser beam during a second pass only at portions of said portion of said substrate plate along the sealing line which did not reach a correct temperature during the first pass of said lower power laser beam.
23. The glass package of claim 14 , wherein said sealing apparatus uses an elliptical focusing lens to emit an elliptical shaped laser beam to melt said portion of said substrate plate in a manner that maintains the substantially constant temperature in said portion of said substrate plate along the sealing line which has the electrode free regions and the electrode occupied regions.
24. The glass package of claim 14 , wherein said sealing apparatus uses a focusing lens and a specially shaped aperture to emit a defocused laser beam to melt said portion of said substrate plate in a manner that maintains the substantially constant temperature in said portion of said substrate plate along the sealing line which has the electrode free regions and the electrode occupied regions.
25. The glass package of claim 14 , wherein a feedback mechanism is used to optimize an operation of said sealing apparatus so as to melt said portion of said substrate plate in a manner that maintains the substantially constant temperature in said portion of said substrate plate along the sealing line which has the electrode free regions and the electrode occupied regions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US12/080,003 US20080182062A1 (en) | 2004-10-20 | 2008-03-31 | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/970,319 US7371143B2 (en) | 2004-10-20 | 2004-10-20 | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
US12/080,003 US20080182062A1 (en) | 2004-10-20 | 2008-03-31 | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
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US10/970,319 Division US7371143B2 (en) | 2004-10-20 | 2004-10-20 | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
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US20080182062A1 true US20080182062A1 (en) | 2008-07-31 |
Family
ID=35636765
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US10/970,319 Active 2026-04-04 US7371143B2 (en) | 2004-10-20 | 2004-10-20 | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
US11/095,144 Abandoned US20060084348A1 (en) | 2004-10-20 | 2005-03-30 | Method for backside sealing organic light emitting diode (OLED) displays |
US12/080,003 Abandoned US20080182062A1 (en) | 2004-10-20 | 2008-03-31 | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
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US10/970,319 Active 2026-04-04 US7371143B2 (en) | 2004-10-20 | 2004-10-20 | Optimization of parameters for sealing organic emitting light diode (OLED) displays |
US11/095,144 Abandoned US20060084348A1 (en) | 2004-10-20 | 2005-03-30 | Method for backside sealing organic light emitting diode (OLED) displays |
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US (3) | US7371143B2 (en) |
EP (1) | EP1831938B1 (en) |
JP (1) | JP4625085B2 (en) |
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US20090230861A1 (en) * | 2006-03-31 | 2009-09-17 | Akinobu Miyazaki | Plasma Display Panel |
KR100824531B1 (en) * | 2006-11-10 | 2008-04-22 | 삼성에스디아이 주식회사 | Organic light emitting display device and fabricating method of the same |
KR20080051756A (en) * | 2006-12-06 | 2008-06-11 | 삼성에스디아이 주식회사 | Organic light emitting display apparatus and method of manufacturing thereof |
KR100787463B1 (en) * | 2007-01-05 | 2007-12-26 | 삼성에스디아이 주식회사 | A glass frit, a composition for preparing seal material and a light emitting device |
KR100838077B1 (en) * | 2007-01-12 | 2008-06-16 | 삼성에스디아이 주식회사 | Manufacturing method of flat panel display device |
JP5080838B2 (en) * | 2007-03-29 | 2012-11-21 | 富士フイルム株式会社 | Electronic device and manufacturing method thereof |
US8330339B2 (en) * | 2007-06-28 | 2012-12-11 | Samsung Display Co., Ltd. | Light emitting display and method of manufacturing the same |
US8258696B2 (en) | 2007-06-28 | 2012-09-04 | Samsung Mobile Display Co., Ltd. | Light emitting display and method of manufacturing the same |
KR100879864B1 (en) * | 2007-06-28 | 2009-01-22 | 삼성모바일디스플레이주식회사 | Light emitting display device and method of manufacturing the same |
KR100883072B1 (en) * | 2007-07-12 | 2009-02-10 | 엘지전자 주식회사 | Display device |
US20090044496A1 (en) * | 2007-08-16 | 2009-02-19 | Botelho John W | Method and apparatus for sealing a glass package |
KR101383710B1 (en) * | 2007-08-27 | 2014-04-09 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
JP2009070687A (en) * | 2007-09-13 | 2009-04-02 | Canon Inc | Manufacturing method of airtight container |
US8247730B2 (en) * | 2007-09-28 | 2012-08-21 | Corning Incorporated | Method and apparatus for frit sealing with a variable laser beam |
JP2009123421A (en) * | 2007-11-13 | 2009-06-04 | Canon Inc | Method of manufacturing air tight container |
US20090203283A1 (en) * | 2008-02-07 | 2009-08-13 | Margaret Helen Gentile | Method for sealing an electronic device |
US8198807B2 (en) | 2008-02-28 | 2012-06-12 | Corning Incorporated | Hermetically-sealed packages for electronic components having reduced unused areas |
WO2009108319A1 (en) * | 2008-02-28 | 2009-09-03 | Corning Incorporated | Method of sealing a glass envelope |
US10135021B2 (en) * | 2008-02-29 | 2018-11-20 | Corning Incorporated | Frit sealing using direct resistive heating |
KR100926622B1 (en) * | 2008-03-17 | 2009-11-11 | 삼성모바일디스플레이주식회사 | Apparatus and Method for hermetic sealing using frit |
KR20090111151A (en) * | 2008-04-21 | 2009-10-26 | 삼성전자주식회사 | Organic light emitting display apparatus and method of manufacturing the same |
WO2009131144A1 (en) * | 2008-04-25 | 2009-10-29 | 浜松ホトニクス株式会社 | Process for fusing glass |
JP5308717B2 (en) * | 2008-05-26 | 2013-10-09 | 浜松ホトニクス株式会社 | Glass welding method |
US8147632B2 (en) * | 2008-05-30 | 2012-04-03 | Corning Incorporated | Controlled atmosphere when sintering a frit to a glass plate |
US7992411B2 (en) | 2008-05-30 | 2011-08-09 | Corning Incorporated | Method for sintering a frit to a glass plate |
US8839643B2 (en) * | 2008-06-11 | 2014-09-23 | Hamamatsu Photonics K.K. | Fusion bonding process for glass |
US8448468B2 (en) | 2008-06-11 | 2013-05-28 | Corning Incorporated | Mask and method for sealing a glass envelope |
DE102008033394B4 (en) * | 2008-07-16 | 2018-01-25 | Osram Oled Gmbh | Component with a first and a second substrate |
US20100020382A1 (en) * | 2008-07-22 | 2010-01-28 | Qualcomm Mems Technologies, Inc. | Spacer for mems device |
CN102138100B (en) * | 2008-07-28 | 2014-06-11 | 康宁股份有限公司 | Method for sealing a liquid within a glass package and the resulting glass package |
US9281132B2 (en) | 2008-07-28 | 2016-03-08 | Corning Incorporated | Method for sealing a liquid within a glass package and the resulting glass package |
US20100118912A1 (en) * | 2008-11-10 | 2010-05-13 | Changyi Lai | Quality control of the frit for oled sealing |
US8245536B2 (en) * | 2008-11-24 | 2012-08-21 | Corning Incorporated | Laser assisted frit sealing of high CTE glasses and the resulting sealed glass package |
DE102009036395A1 (en) * | 2009-04-30 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Component with a first and a second substrate and method for its production |
WO2010138451A2 (en) * | 2009-05-27 | 2010-12-02 | Corning Incorporated | Laser scoring of glass at elevated temperatures |
US8440479B2 (en) * | 2009-05-28 | 2013-05-14 | Corning Incorporated | Method for forming an organic light emitting diode device |
KR20120048528A (en) * | 2009-07-23 | 2012-05-15 | 아사히 가라스 가부시키가이샤 | Method and apparatus for manufacturing glass member provided with sealing material layer and method for manufacturing electronic device |
JP5370011B2 (en) * | 2009-08-31 | 2013-12-18 | 旭硝子株式会社 | Method for producing glass member with sealing material layer and method for producing electronic device |
JP2011060699A (en) * | 2009-09-14 | 2011-03-24 | Canon Inc | Manufacturing method of image display device and jointing method of base material |
JP2011060698A (en) | 2009-09-14 | 2011-03-24 | Canon Inc | Jointing method of base material and manufacturing method of image display device |
JP2011060700A (en) * | 2009-09-14 | 2011-03-24 | Canon Inc | Manufacturing method of image display device, and jointing method of base material |
JP2011060697A (en) * | 2009-09-14 | 2011-03-24 | Canon Inc | Manufacturing method of image display device |
KR101084231B1 (en) * | 2009-10-05 | 2011-11-16 | 삼성모바일디스플레이주식회사 | Laser irradiation system and laser irradiation method |
US8379392B2 (en) * | 2009-10-23 | 2013-02-19 | Qualcomm Mems Technologies, Inc. | Light-based sealing and device packaging |
WO2011067700A1 (en) | 2009-12-02 | 2011-06-09 | Koninklijke Philips Electronics N.V. | Substrate connection by heat activated binder |
KR101097327B1 (en) * | 2010-01-07 | 2011-12-23 | 삼성모바일디스플레이주식회사 | Laser beam irradiation apparatus for substrate sealing and manufacturing method of organic light emitting display device using the same |
KR101243920B1 (en) | 2010-01-07 | 2013-03-14 | 삼성디스플레이 주식회사 | Laser beam irradiation apparatus for substrate sealing, substrate sealing method, and manufacturing method of organic light emitting display device using the same |
KR101097328B1 (en) * | 2010-01-07 | 2011-12-23 | 삼성모바일디스플레이주식회사 | Laser beam irradiation apparatus for substrate sealing, substrate sealing method, and manufacturing method of organic light emitting display device using the same |
KR101097340B1 (en) | 2010-03-08 | 2011-12-23 | 삼성모바일디스플레이주식회사 | Display apparatus |
JP5659511B2 (en) * | 2010-03-11 | 2015-01-28 | 住友化学株式会社 | Electrical equipment |
CN101807667B (en) * | 2010-03-18 | 2011-11-16 | 电子科技大学 | Encapsulating device of organic photoelectronic device and encapsulating method thereof |
JP2011210430A (en) * | 2010-03-29 | 2011-10-20 | Canon Inc | Method for manufacturing hermetic container |
JP5590935B2 (en) * | 2010-03-29 | 2014-09-17 | キヤノン株式会社 | Airtight container manufacturing method |
JP2011210431A (en) * | 2010-03-29 | 2011-10-20 | Canon Inc | Method for manufacturing hermetic container |
TWI503044B (en) * | 2010-04-13 | 2015-10-01 | Au Optronics Corp | Electro-luminescent device package and packaging process thereof |
JP2012009318A (en) * | 2010-06-25 | 2012-01-12 | Canon Inc | Airtight container and method of manufacturing image display device |
JP2012048895A (en) | 2010-08-25 | 2012-03-08 | Canon Inc | Manufacturing method for air tight container |
JP2012059401A (en) | 2010-09-06 | 2012-03-22 | Canon Inc | Method for manufacturing airtight container |
JP5627370B2 (en) | 2010-09-27 | 2014-11-19 | キヤノン株式会社 | Depressurized airtight container and image display device manufacturing method |
KR101722026B1 (en) * | 2010-10-22 | 2017-04-12 | 삼성디스플레이 주식회사 | A flat display panel, a mother substrate for the flat display panel, and a method for manufacturing the flat display panel |
KR20120044020A (en) | 2010-10-27 | 2012-05-07 | 삼성모바일디스플레이주식회사 | Organic light emitting display apparatus and method of manufacturing thereof |
KR101188929B1 (en) * | 2010-11-12 | 2012-10-08 | 삼성에스디아이 주식회사 | Seal member for photoelectric conversion device, photoelectric conversion device comprising the same and method of preparing the same |
KR101772661B1 (en) | 2010-11-29 | 2017-09-13 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
KR101693347B1 (en) * | 2010-12-03 | 2017-01-06 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing display apparatus |
JP5745262B2 (en) * | 2010-12-08 | 2015-07-08 | 浜松ホトニクス株式会社 | Glass welding apparatus and glass welding method |
WO2012077718A1 (en) * | 2010-12-08 | 2012-06-14 | 浜松ホトニクス株式会社 | Glass welding device and glass welding method |
US8796109B2 (en) * | 2010-12-23 | 2014-08-05 | Medtronic, Inc. | Techniques for bonding substrates using an intermediate layer |
KR101801352B1 (en) | 2011-01-18 | 2017-11-27 | 삼성디스플레이 주식회사 | flat panel display device and method of manufacturing thereof |
US8733128B2 (en) * | 2011-02-22 | 2014-05-27 | Guardian Industries Corp. | Materials and/or method of making vacuum insulating glass units including the same |
KR101071166B1 (en) | 2011-04-22 | 2011-10-10 | 주식회사 엘티에스 | Method for sealing frit using laser |
KR101859964B1 (en) * | 2011-06-29 | 2018-05-24 | 삼성디스플레이 주식회사 | Apparatus of sealing substrate and method of sealing substrate using the same |
JP5882114B2 (en) * | 2012-04-09 | 2016-03-09 | 浜松ホトニクス株式会社 | Glass welding method |
JP6116170B2 (en) * | 2012-09-24 | 2017-04-19 | 株式会社半導体エネルギー研究所 | Manufacturing method of sealing body |
KR101993332B1 (en) | 2012-10-04 | 2019-06-27 | 삼성디스플레이 주식회사 | Flat panel display device |
KR102160829B1 (en) * | 2012-11-02 | 2020-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Sealed body and method for manufacturing the same |
KR101398020B1 (en) * | 2012-11-30 | 2014-05-30 | 주식회사 엘티에스 | Apparatus for sealing frit using laser |
TW201431149A (en) * | 2013-01-18 | 2014-08-01 | Innolux Corp | Display apparatus and the sealing method thereof |
KR102061795B1 (en) * | 2013-01-31 | 2020-01-03 | 삼성디스플레이 주식회사 | A sealing method for flat panel display device |
TWI636875B (en) * | 2013-02-04 | 2018-10-01 | 半導體能源研究所股份有限公司 | Method for forming glass layer and method for manufacturing sealed structure |
JP2014160788A (en) | 2013-02-21 | 2014-09-04 | Panasonic Corp | Component mounting apparatus and component mounting method |
JP5903668B2 (en) * | 2013-02-21 | 2016-04-13 | パナソニックIpマネジメント株式会社 | Component mounting apparatus and component mounting method |
TWI479464B (en) * | 2013-05-09 | 2015-04-01 | Au Optronics Corp | Display panel and packaging process thereof |
TW201445724A (en) | 2013-05-30 | 2014-12-01 | Innolux Corp | Display device packaging method and display device |
CN104218186B (en) * | 2013-05-30 | 2016-12-28 | 群创光电股份有限公司 | The method for packing of display device and display device |
TWI520324B (en) | 2013-11-05 | 2016-02-01 | 群創光電股份有限公司 | Display panel with varing conductive pattern zone |
WO2015100414A1 (en) | 2013-12-27 | 2015-07-02 | Arizona Board Of Regents On Behalf Of Arizona State University | Deformable origami batteries |
CN104882557A (en) * | 2014-02-27 | 2015-09-02 | 群创光电股份有限公司 | Organic light-emitting diode apparatus |
CN104157792A (en) * | 2014-08-08 | 2014-11-19 | 上海和辉光电有限公司 | OLED (organic light emitting diode) packaging structure and method |
US10418664B2 (en) | 2014-09-26 | 2019-09-17 | Arizona Board Of Regents On Behalf Of Arizona State University | Stretchable batteries |
CN104362259B (en) * | 2014-11-17 | 2017-02-22 | 京东方科技集团股份有限公司 | LED display panel and packaging method thereof |
CN104393199B (en) * | 2014-11-17 | 2016-11-30 | 京东方科技集团股份有限公司 | A kind of mask plate and use the display device method for packing of this mask plate |
US9425437B2 (en) * | 2014-11-18 | 2016-08-23 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting diode (OLED) display |
WO2016109652A1 (en) | 2015-01-02 | 2016-07-07 | Arizona Board Of Regents On Behalf Of Arizona State University | Archimedean spiral design for deformable electronics |
CN104600222B (en) | 2015-02-04 | 2016-10-19 | 京东方科技集团股份有限公司 | Method for packing, display floater and display device |
US10502991B2 (en) * | 2015-02-05 | 2019-12-10 | The Arizona Board Of Regents On Behalf Of Arizona State University | Origami displays and methods for their manufacture |
CN106158669B (en) * | 2015-04-24 | 2018-11-09 | 上海微电子装备(集团)股份有限公司 | A kind of device and control method of plesiochronous encapsulation |
US10390698B2 (en) | 2016-06-16 | 2019-08-27 | Arizona Board Of Regents On Behalf Of Arizona State University | Conductive and stretchable polymer composite |
CN105977399B (en) | 2016-07-22 | 2018-03-27 | 京东方科技集团股份有限公司 | The method for packing of display panel, display device and display panel |
CN107665826B (en) * | 2016-07-29 | 2019-11-26 | 上海微电子装备(集团)股份有限公司 | Laser package method and laser package device |
FR3065577B1 (en) | 2017-04-25 | 2021-09-17 | Commissariat Energie Atomique | SEALING CELL AND METHOD FOR ENCAPSULATING A MICROELECTRONIC COMPONENT WITH SUCH A SEALING CELL |
CN207002586U (en) * | 2017-04-26 | 2018-02-13 | 洛阳兰迪玻璃机器股份有限公司 | A kind of vacuum glass product |
CN107565051B (en) * | 2017-08-25 | 2019-08-02 | 上海天马有机发光显示技术有限公司 | Display panel, display device and manufacturing method |
GB201806411D0 (en) | 2018-04-19 | 2018-06-06 | Johnson Matthey Plc | Kit, particle mixture, paste and methods |
CN110867390A (en) * | 2018-08-28 | 2020-03-06 | 三星显示有限公司 | Method for manufacturing display device |
CN112713254B (en) * | 2020-12-28 | 2023-01-24 | 武汉天马微电子有限公司 | Display panel, display device and preparation method |
CN114230199B (en) * | 2021-11-12 | 2023-12-26 | 中江立江电子有限公司 | Large-diameter radio frequency insulator sintering mold and use method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6195142B1 (en) * | 1995-12-28 | 2001-02-27 | Matsushita Electrical Industrial Company, Ltd. | Organic electroluminescence element, its manufacturing method, and display device using organic electroluminescence element |
US20020197423A1 (en) * | 2000-09-27 | 2002-12-26 | Guardian Industries Corp. | Vacuum IG window unit with edge seal formed via microwave curing, and corresponding method of making the same |
US20030066311A1 (en) * | 2001-10-09 | 2003-04-10 | Chien-Hsing Li | Encapsulation of a display element and method of forming the same |
US20050001545A1 (en) * | 2003-04-16 | 2005-01-06 | Aitken Bruce G. | Glass package that is hermetically sealed with a frit and method of fabrication |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5495264A (en) * | 1978-01-11 | 1979-07-27 | Hitachi Ltd | Liquid crystal display element |
KR930002923B1 (en) * | 1990-05-10 | 1993-04-15 | 삼성전관주식회사 | Making method of lcd |
JP2754461B2 (en) * | 1994-07-08 | 1998-05-20 | 双葉電子工業株式会社 | Container sealing method and sealing device |
JPH10125463A (en) * | 1995-12-28 | 1998-05-15 | Matsushita Electric Ind Co Ltd | Organic electroluminescent element, crystal lighting system, display device, and manufacture of organic electroluminescent element |
US6037710A (en) * | 1998-04-29 | 2000-03-14 | Candescent Technologies, Inc. | Microwave sealing of flat panel displays |
JPH1074583A (en) * | 1996-08-30 | 1998-03-17 | Sanyo Electric Co Ltd | Organic el display and manufacture of organic el display |
US6129603A (en) * | 1997-06-24 | 2000-10-10 | Candescent Technologies Corporation | Low temperature glass frit sealing for thin computer displays |
US6021648A (en) * | 1997-09-29 | 2000-02-08 | U. S. Philips Corporation | Method of manufacturing a flat glass panel for a picture display device |
AU1066599A (en) * | 1997-10-01 | 1999-04-23 | Screen Developments Ltd | Visual display |
JP3379916B2 (en) * | 1998-04-02 | 2003-02-24 | 松下電器産業株式会社 | High melting point material melt bonding equipment |
US6848964B1 (en) * | 1998-09-14 | 2005-02-01 | Matsushita Electric Industrial Co., Ltd. | Sealing method and apparatus for manufacturing high-performance gas discharge panel |
JP3363116B2 (en) * | 1998-09-14 | 2003-01-08 | 松下電器産業株式会社 | Method of manufacturing gas discharge panel and sealing device for gas discharge panel |
KR100300421B1 (en) * | 1999-02-02 | 2001-09-13 | 김순택 | Method and apparatus of splitting glass |
JP2001092376A (en) * | 1999-09-20 | 2001-04-06 | Denso Corp | Indicating element and its production |
US6406578B1 (en) * | 1999-10-19 | 2002-06-18 | Honeywell Inc. | Seal and method of making same for gas laser |
US6608283B2 (en) * | 2000-02-08 | 2003-08-19 | Emagin Corporation | Apparatus and method for solder-sealing an active matrix organic light emitting diode |
US6539790B2 (en) | 2000-12-04 | 2003-04-01 | University Of Vermont And State Agricultural College | Stiction-based chuck for bulge tester and method of bulge testing |
US6565400B1 (en) * | 2001-06-26 | 2003-05-20 | Candescent Technologies Corporation | Frit protection in sealing process for flat panel displays |
DE10219951A1 (en) * | 2002-05-03 | 2003-11-13 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Process for encapsulating a component based on organic semiconductors |
KR20040019502A (en) * | 2002-08-28 | 2004-03-06 | 주식회사 엘리아테크 | Organic electro-luminescence display panel using photoresist and fabricating method thereof |
JP2004095412A (en) * | 2002-08-30 | 2004-03-25 | Hitachi Chem Co Ltd | Sealing method and sealing material of organic el element |
US20040206953A1 (en) * | 2003-04-16 | 2004-10-21 | Robert Morena | Hermetically sealed glass package and method of fabrication |
JP2005209413A (en) * | 2004-01-20 | 2005-08-04 | Sanyo Electric Co Ltd | Manufacturing method of display panel and display panel |
-
2004
- 2004-10-20 US US10/970,319 patent/US7371143B2/en active Active
-
2005
- 2005-03-30 US US11/095,144 patent/US20060084348A1/en not_active Abandoned
- 2005-10-19 TW TW094136651A patent/TWI339994B/en not_active IP Right Cessation
- 2005-10-19 CN CN2005800359333A patent/CN101095247B/en not_active Expired - Fee Related
- 2005-10-19 EP EP05810112.2A patent/EP1831938B1/en not_active Expired - Fee Related
- 2005-10-19 KR KR1020077010802A patent/KR100942118B1/en active IP Right Grant
- 2005-10-19 WO PCT/US2005/037967 patent/WO2006045067A1/en active Application Filing
- 2005-10-19 JP JP2007538083A patent/JP4625085B2/en not_active Expired - Fee Related
-
2008
- 2008-03-31 US US12/080,003 patent/US20080182062A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6195142B1 (en) * | 1995-12-28 | 2001-02-27 | Matsushita Electrical Industrial Company, Ltd. | Organic electroluminescence element, its manufacturing method, and display device using organic electroluminescence element |
US20020197423A1 (en) * | 2000-09-27 | 2002-12-26 | Guardian Industries Corp. | Vacuum IG window unit with edge seal formed via microwave curing, and corresponding method of making the same |
US20030066311A1 (en) * | 2001-10-09 | 2003-04-10 | Chien-Hsing Li | Encapsulation of a display element and method of forming the same |
US20050001545A1 (en) * | 2003-04-16 | 2005-01-06 | Aitken Bruce G. | Glass package that is hermetically sealed with a frit and method of fabrication |
US6998776B2 (en) * | 2003-04-16 | 2006-02-14 | Corning Incorporated | Glass package that is hermetically sealed with a frit and method of fabrication |
US7602121B2 (en) * | 2003-04-16 | 2009-10-13 | Corning Incorporated | Glass package that is hermetically sealed with a frit and method of fabrication |
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8371353B2 (en) | 2006-11-09 | 2013-02-12 | Samsung Display Co., Ltd. | Sealing device and method of manufacturing display device using the same |
US20080110561A1 (en) * | 2006-11-09 | 2008-05-15 | Jong-Woo Lee | Sealing device and method of manufacturing display device using the same |
US8512503B2 (en) | 2006-11-09 | 2013-08-20 | Samsung Display Co., Ltd. | Method of manufacturing sealing device and display device using the same |
US20090142984A1 (en) * | 2007-11-30 | 2009-06-04 | Stephan Lvovich Logunov | Methods and apparatus for packaging electronic components |
US7815480B2 (en) * | 2007-11-30 | 2010-10-19 | Corning Incorporated | Methods and apparatus for packaging electronic components |
US9181126B2 (en) | 2008-05-26 | 2015-11-10 | Hamamatsu Photonics K.K. | Glass fusion method |
US8071999B2 (en) * | 2008-06-10 | 2011-12-06 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Flat lighting devices and method of contacting flat lighting devices |
US20090302729A1 (en) * | 2008-06-10 | 2009-12-10 | Joerg Amelung | Flat Lighting Devices and Method of Contacting Flat Lighting Devices |
US10322469B2 (en) | 2008-06-11 | 2019-06-18 | Hamamatsu Photonics K.K. | Fusion bonding process for glass |
US20110067448A1 (en) * | 2008-06-11 | 2011-03-24 | Hamamatsu Photonics K.K. | Fusion-bonding process for glass |
US9045365B2 (en) | 2008-06-23 | 2015-06-02 | Hamamatsu Photonics K.K. | Fusion-bonding process for glass |
US20110088430A1 (en) * | 2008-06-23 | 2011-04-21 | Hamamatsu Photonics K.K. | Fusion-bonding process for glass |
US20100296291A1 (en) * | 2009-05-20 | 2010-11-25 | Samsung Mobile Display Co., Ltd. | Light radiating device and method of fabricating organic light emitting diode display device using the same |
US8848749B2 (en) | 2009-05-20 | 2014-09-30 | Samsung Display Co., Ltd. | Light radiating device and method of fabricating organic light emitting diode display device using the same |
US20120234048A1 (en) * | 2009-11-12 | 2012-09-20 | Hamamatsu Photonics K.K. | Glass welding method |
US9073778B2 (en) * | 2009-11-12 | 2015-07-07 | Hamamatsu Photonics K.K. | Glass welding method |
US20110115365A1 (en) * | 2009-11-16 | 2011-05-19 | Won-Kyu Kwak | Display device and method of manufacturing display device |
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US20170025633A1 (en) * | 2011-10-14 | 2017-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Sealed Structure |
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US20130095582A1 (en) * | 2011-10-14 | 2013-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Sealed Structure |
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US10096741B2 (en) | 2011-11-28 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Sealed body, light-emitting module, and method of manufacturing sealed body |
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US10324288B2 (en) * | 2016-11-21 | 2019-06-18 | Mega 1 Company Limited | Vehicle display system absorbing ambient light |
Also Published As
Publication number | Publication date |
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CN101095247A (en) | 2007-12-26 |
US20060082298A1 (en) | 2006-04-20 |
US20060084348A1 (en) | 2006-04-20 |
TWI339994B (en) | 2011-04-01 |
JP4625085B2 (en) | 2011-02-02 |
WO2006045067A1 (en) | 2006-04-27 |
EP1831938B1 (en) | 2015-03-04 |
KR20070085333A (en) | 2007-08-27 |
JP2008517446A (en) | 2008-05-22 |
EP1831938A1 (en) | 2007-09-12 |
US7371143B2 (en) | 2008-05-13 |
KR100942118B1 (en) | 2010-02-12 |
TW200629966A (en) | 2006-08-16 |
CN101095247B (en) | 2010-05-05 |
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