US20080203374A1 - Phase-change memory and fabrication method thereof - Google Patents
Phase-change memory and fabrication method thereof Download PDFInfo
- Publication number
- US20080203374A1 US20080203374A1 US12/010,885 US1088508A US2008203374A1 US 20080203374 A1 US20080203374 A1 US 20080203374A1 US 1088508 A US1088508 A US 1088508A US 2008203374 A1 US2008203374 A1 US 2008203374A1
- Authority
- US
- United States
- Prior art keywords
- phase
- electrode
- change material
- change
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/068—Patterning of the switching material by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
- H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa or cup type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Definitions
- the invention relates to a memory element and fabrication method thereof, and more particularly to a phase-change memory element and fabrication method thereof.
- Electronic devices use different types of memories, such as DRAM, SRAM and flash memory or a combination based on the requirements of the application, the operating speed, the memory size and the cost considerations of the equipment.
- Current developments in the memory technology field include FeRAM, MRAM and phase-change memory.
- phase-change memory is most likely to be mass manufactured in the near future.
- Phase-change memory is targeted for applications currently utilizing flash non-volatile memory. Such applications are typically mobile devices which require low power consumption, and hence, minimal programming currents.
- a phase-change memory cell is designed with several goals in mind: low programming current, higher reliability (including electromigration risk), smaller cell size, and faster phase transformation speed. These requirements often set contradictory requirements on feature size, but a careful choice and arrangement of materials used for the components can often widen the tolerance.
- U.S. Pat. No. 6,750,079 discloses a method for fabricating a phase-change memory element 10 , referring to FIG. 1 .
- a dielectric layer 14 with a perpendicular side wall formed on a substrate 12 is formed on a substrate 12 .
- a metal layer is conformally formed on the dielectric layer 14 and substrate 12 .
- the metal layer is subjected to an anisotropic etching to form a metal spacer 16 with smaller top surface.
- a dielectric layer 18 is formed to cover the side walls of the metal spacer 16 .
- a phase-change layer 20 , an electrode 22 and a protective layer 24 are subsequently formed on the substrate.
- phase-change memory element comprises a substrate.
- a first electrode is formed on the substrate.
- a circular or linear phase-change layer is electrically connected to the first electrode.
- a second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.
- An exemplary embodiment of a method comprises the following steps: providing a substrate; forming a first electrode on the substrate; forming a first dielectric layer on the first electrode; patterning the first dielectric layer to form a dielectric pillar, wherein the top view of the dielectric pillar is circle or polygon; conformally forming a phase-change material to cover the dielectric pillar and etching back the phase-change material to remove phase-change material on the top surface of the dielectric pillar and first electrode, remaining a phase-change material spacer on the side walls of the dielectric pillar; forming a second dielectric layer on the substrate and etching back the second dielectric layer to expose the top surface of the phase-change material spacer; and forming a second electrode on the dielectric pillar and second dielectric layer to electrically connect to the phase-change material.
- the method of manufacturing phase-change memory element comprises the following steps. providing a substrate; forming a first electrode on the substrate; forming a first dielectric layer on the first electrode; patterning the first dielectric layer to form an opening, wherein the top view of the opening is circle or polygon; conformally forming a phase-change material on the first dielectric layer to cover the opening and etching back the phase-change material to remain a phase-change material spacer on the side walls of the opening; forming a second dielectric layer on the substrate and etching back the second dielectric layer to expose the top surface of the phase-change material spacer; and forming a second electrode on the opening and the second dielectric layer to electrically connect to the phase-change material spacer.
- FIG. 1 is a cross section of conventional phase-change memory element.
- FIGS. 2 a and 2 g are cross sections of a method of fabricating a phase-change memory element according to an embodiment of the invention.
- FIG. 3 is a top view of the phase change-memory element of FIG. 2 g
- FIG. 4 is an alternative-top view of the phase-change memory element of FIG. 2 g.
- FIGS. 5 a and 5 c are cross sections of a method of fabricating a phase-change memory element according to another embodiment of the invention.
- FIG. 6 is a top view of the phase-change memory element of FIG. 5 c
- FIG. 7 is an alternative top view of the phase-change memory element of FIG. 5 c.
- FIGS. 8 a to 8 g are cross sections of a method of fabricating a phase-change memory element according to still another embodiment of the invention.
- a first electrode 101 is formed on a substrate 102 .
- the substrate 102 can be a substrate employed in a semiconductor process, such as silicon substrate.
- the substrate 102 can be a substrate comprising a complementary metal oxide semiconductor (CMOS) circuit, isolation structure, diode, or capacitor.
- CMOS complementary metal oxide semiconductor
- the accompanying drawings show the substrate 102 in a plain rectangle in order to simplify the illustration.
- the first electrode 101 comprises phase-change material such as chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe.
- the first electrode 101 also can be metal or metal alloy, such as Al, W, Mo, TiN, or TiW.
- a first dielectric layer 103 is formed on the first electrode 101 .
- the dielectric layer 103 can be silicon-containing compound, such as silicon nitride or silicon oxide.
- the first dielectric layer 103 is patterned to form an opening 104 , wherein the opening 104 has a width of 20 nm ⁇ 500 nm, or 40 nm ⁇ 200 nm, such as 60 nm.
- phase-change layer 105 is conformally formed on the first dielectric layer 103 and the first electrode 101 to cover the side walls and the bottom of the opening 104 .
- the phase-change layer 105 comprises chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe.
- phase-change layer 105 is etched back with the first dielectric layer 103 and the first electrode 101 acting as etching stopper, thereby remaining a phase-change material spacer 106 on the side walls of the opening 104 .
- the phase-change material spacer 106 can be a closed curve, such as a circular phase-change material spacer. It should be noted that the width of the phase-change material spacer 106 has a dimension less than the resolution limit of photolithography process. Further, the dimensions of phase-change material spacer 106 from top to bottom are the same, and the phase-change layer is essentiality perpendicular to the first electrode and second electrode.
- the phase-change material spacer 106 has a width of 2 nm ⁇ 120 nm, or 10 nm ⁇ 50 nm, such as 20 nm.
- the height of the phase-change material spacer 106 is 1 nm ⁇ 200 nm, or 5 mm ⁇ 80 nm, such as 20 nm.
- a second dielectric layer 107 is formed on the substrate and subjected to a back-etched, covering the sidewalls of the phase-change material spacer 106 .
- a second electrode 108 is formed on the first and second dielectric layer 103 and 107 and electrically connected to the phase-change material spacer 106 .
- the second electrode 108 also comprises phase-change material.
- FIG. 2 g the above structure is patterned and a third dielectric layer 109 is formed to surround the pattern first and second electrodes, thereby defining a isolated phase-change memory element 100 .
- FIGS. 3 and 4 show the top views of the phase-change memory element 100 . Accordingly, the top view of the opening 104 can be circle or polygon and the top view of first electrode 101 and second electrode 107 also can be circle or polygon
- the phase-change material spacer is patterned to form a non-continuous (such as linear) phase-change material spacer 111 , referring to FIG. 5 a .
- a second dielectric layer 107 is formed on the substrate and subjected to a back-etched, covering the sidewalls of the phase-change material spacer 111 .
- a second electrode 108 is formed on the first and second dielectric layer 103 and 107 and electrically connected to the linear phase-change material spacer 111 .
- the above substrate is patterned to isolate phase-change memory element, referring to FIG. 5 c .
- FIGS. 6 and 7 show the top views of the phase-change memory element as disclosed in FIG. 5 c.
- FIGS. 8 a to 8 g are sectional diagrams illustrating another embodiment of the manufacturing process of the phase-change memory element 200 .
- a first electrode 201 is formed on the substrate 202 .
- the substrate 202 can be a substrate comprising a complementary metal oxide semiconductor (CMOS) circuit, isolation structure, diode, or capacitor.
- CMOS complementary metal oxide semiconductor
- the accompanying drawings show the substrate 202 in a plain rectangle in order to simplify the illustration.
- the first electrode 201 comprises phase-change material such as chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe.
- the first electrode 201 also can be metal or metal alloy, such as Al, W, Mo, TiN, or TiW.
- a first dielectric layer 203 is formed on first electrode 201 .
- the dielectric layer 203 can be silicon-containing compound, such as silicon nitride or silicon oxide.
- the first dielectric layer 203 is patterned to form a dielectric pillar 204 .
- the dielectric pillar 204 has a width of 20 nm ⁇ 500 nm, or 40 nm ⁇ 200 nm, such as 60 nm.
- phase-change layer 205 is conformally formed on dielectric pillar 204 and the first electrode 201 to cover the side walls and top surface of the dielectric pillar 204 .
- the phase-change layer 205 comprises chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe.
- phase-change layer 205 formed on the dielectric pillar 204 and first electrode 201 is removed via back-etched, remaining a phase-change material spacer 206 covering the sidewalls of the dielectric pillar 204 .
- the phase-change material spacer 206 can be a closed curve, such as a circular phase-change material spacer. It should be noted that the width of the phase-change material spacer 206 has a dimension less than the resolution limit of photolithography process. Further, the dimensions of phase-change material spacer 206 from top to bottom are the same, and the phase-change material spacer 206 is essentiality perpendicular to the first electrode and second electrode.
- the phase-change material spacer 206 has a width of 2 nm ⁇ 120 nm, or 10 mm ⁇ 50 nm, such as 20 nm.
- the height of the phase-change material spacer 206 is 1 nm ⁇ 200 nm, or 5 nm ⁇ 80 nm, such as 20 nm.
- a second dielectric layer 207 is formed on the substrate and subjected to a back-etched, covering the sidewalls of the phase-change material spacer 206 .
- a second electrode 208 is formed on the first and second dielectric layer 203 and 207 and electrically connected to the phase-change material spacer 206 .
- the above structure is patterned and a third dielectric layer 209 is formed to surround the pattern first and second electrodes, thereby defining an isolated phase-change memory element 200 .
- embodiments of the invention provide method for fabricating phase-change material spacer, wherein the width of the top and bottom surfaces can be less than the resolution limit of photolithography process. Since the dimensions of phase-change material spacer from top to bottom are the same and the phase and the phase-change layer is essentiality, the disclosed phase-change memory element exhibits great temperature uniformity when applying a voltage pulse. Moreover, the fabrication process is relatively simple and can accommodate various cell designs, and low cost can be maintained.
Abstract
Description
- 1. Field of the Invention
- The invention relates to a memory element and fabrication method thereof, and more particularly to a phase-change memory element and fabrication method thereof.
- 2. Description of the Related Art
- Electronic devices use different types of memories, such as DRAM, SRAM and flash memory or a combination based on the requirements of the application, the operating speed, the memory size and the cost considerations of the equipment. Current developments in the memory technology field include FeRAM, MRAM and phase-change memory. Among these alternative memories, phase-change memory is most likely to be mass manufactured in the near future.
- Phase-change memory is targeted for applications currently utilizing flash non-volatile memory. Such applications are typically mobile devices which require low power consumption, and hence, minimal programming currents. A phase-change memory cell is designed with several goals in mind: low programming current, higher reliability (including electromigration risk), smaller cell size, and faster phase transformation speed. These requirements often set contradictory requirements on feature size, but a careful choice and arrangement of materials used for the components can often widen the tolerance.
- To reduce the programming current, the most straightforward way is to shrink the heating area. A benefit of this strategy is simultaneous reduction of cell size. Assuming a fixed required current density, the current will shrink in proportion to the area. In reality, however, cooling becomes significant for smaller structures, and loss to surroundings becomes more important due to increasing surface/volume ratio. As a result, the required current density must increase as heating area is reduced. This poses an electromigration concern for reliability. Hence, it is important to use materials in the cell which do not pose an electromigration concern. It is also important to improve the heating efficiency, by increasing heating flux in the active programming region while reducing heat loss to the surroundings.
- U.S. Pat. No. 6,750,079 discloses a method for fabricating a phase-
change memory element 10, referring toFIG. 1 . First, adielectric layer 14 with a perpendicular side wall formed on asubstrate 12. Next, a metal layer is conformally formed on thedielectric layer 14 andsubstrate 12. Next, the metal layer is subjected to an anisotropic etching to form ametal spacer 16 with smaller top surface. Next, adielectric layer 18 is formed to cover the side walls of themetal spacer 16. Finally, a phase-change layer 20, anelectrode 22 and aprotective layer 24 are subsequently formed on the substrate. - Therefore, it is necessary to develop a phase-change memory to solve the previously described problems.
- An exemplary embodiment a phase-change memory element comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.
- Methods of manufacturing phase-change memory elements are also provided. An exemplary embodiment of a method comprises the following steps: providing a substrate; forming a first electrode on the substrate; forming a first dielectric layer on the first electrode; patterning the first dielectric layer to form a dielectric pillar, wherein the top view of the dielectric pillar is circle or polygon; conformally forming a phase-change material to cover the dielectric pillar and etching back the phase-change material to remove phase-change material on the top surface of the dielectric pillar and first electrode, remaining a phase-change material spacer on the side walls of the dielectric pillar; forming a second dielectric layer on the substrate and etching back the second dielectric layer to expose the top surface of the phase-change material spacer; and forming a second electrode on the dielectric pillar and second dielectric layer to electrically connect to the phase-change material.
- According to another exemplary embodiment of the invention, the method of manufacturing phase-change memory element comprises the following steps. providing a substrate; forming a first electrode on the substrate; forming a first dielectric layer on the first electrode; patterning the first dielectric layer to form an opening, wherein the top view of the opening is circle or polygon; conformally forming a phase-change material on the first dielectric layer to cover the opening and etching back the phase-change material to remain a phase-change material spacer on the side walls of the opening; forming a second dielectric layer on the substrate and etching back the second dielectric layer to expose the top surface of the phase-change material spacer; and forming a second electrode on the opening and the second dielectric layer to electrically connect to the phase-change material spacer.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIG. 1 is a cross section of conventional phase-change memory element. -
FIGS. 2 a and 2 g are cross sections of a method of fabricating a phase-change memory element according to an embodiment of the invention. -
FIG. 3 is a top view of the phase change-memory element ofFIG. 2 g, andFIG. 4 is an alternative-top view of the phase-change memory element ofFIG. 2 g. -
FIGS. 5 a and 5 c are cross sections of a method of fabricating a phase-change memory element according to another embodiment of the invention. -
FIG. 6 is a top view of the phase-change memory element ofFIG. 5 c, andFIG. 7 is an alternative top view of the phase-change memory element ofFIG. 5 c. -
FIGS. 8 a to 8 g are cross sections of a method of fabricating a phase-change memory element according to still another embodiment of the invention. - The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
- First, referring to
FIG. 2 a, afirst electrode 101 is formed on asubstrate 102. Particularly, thesubstrate 102 can be a substrate employed in a semiconductor process, such as silicon substrate. Thesubstrate 102 can be a substrate comprising a complementary metal oxide semiconductor (CMOS) circuit, isolation structure, diode, or capacitor. The accompanying drawings show thesubstrate 102 in a plain rectangle in order to simplify the illustration. Herein, thefirst electrode 101 comprises phase-change material such as chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe. Further, thefirst electrode 101 also can be metal or metal alloy, such as Al, W, Mo, TiN, or TiW. - Next, referring to
FIG. 2 b, a firstdielectric layer 103 is formed on thefirst electrode 101. Thedielectric layer 103 can be silicon-containing compound, such as silicon nitride or silicon oxide. Next, the firstdielectric layer 103 is patterned to form anopening 104, wherein theopening 104 has a width of 20 nm˜500 nm, or 40 nm˜200 nm, such as 60 nm. - Next, referring to
FIG. 2 c, a phase-change layer 105 is conformally formed on the firstdielectric layer 103 and thefirst electrode 101 to cover the side walls and the bottom of theopening 104. The phase-change layer 105 comprises chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe. - Referring to
FIG. 2 d, the phase-change layer 105 is etched back with the firstdielectric layer 103 and thefirst electrode 101 acting as etching stopper, thereby remaining a phase-change material spacer 106 on the side walls of theopening 104. The phase-change material spacer 106 can be a closed curve, such as a circular phase-change material spacer. It should be noted that the width of the phase-change material spacer 106 has a dimension less than the resolution limit of photolithography process. Further, the dimensions of phase-change material spacer 106 from top to bottom are the same, and the phase-change layer is essentiality perpendicular to the first electrode and second electrode. The phase-change material spacer 106 has a width of 2 nm˜120 nm, or 10 nm˜50 nm, such as 20 nm. The height of the phase-change material spacer 106 is 1 nm˜200 nm, or 5 mm˜80 nm, such as 20 nm. - Referring to
FIG. 2 e, asecond dielectric layer 107 is formed on the substrate and subjected to a back-etched, covering the sidewalls of the phase-change material spacer 106. - Next, referring to
FIG. 2 f, asecond electrode 108 is formed on the first and seconddielectric layer change material spacer 106. Thesecond electrode 108 also comprises phase-change material. - Finally, referring to
FIG. 2 g, the above structure is patterned and a thirddielectric layer 109 is formed to surround the pattern first and second electrodes, thereby defining a isolated phase-change memory element 100.FIGS. 3 and 4 show the top views of the phase-change memory element 100. Accordingly, the top view of theopening 104 can be circle or polygon and the top view offirst electrode 101 andsecond electrode 107 also can be circle or polygon - According to another embodiment of the invention, after the process as disclosed in
FIG. 2 e, the phase-change material spacer is patterned to form a non-continuous (such as linear) phase-change material spacer 111, referring toFIG. 5 a. Next, referring toFIG. 5 b, asecond dielectric layer 107 is formed on the substrate and subjected to a back-etched, covering the sidewalls of the phase-change material spacer 111. Next, asecond electrode 108 is formed on the first and seconddielectric layer change material spacer 111. Finally, the above substrate is patterned to isolate phase-change memory element, referring toFIG. 5 c.FIGS. 6 and 7 show the top views of the phase-change memory element as disclosed inFIG. 5 c. -
FIGS. 8 a to 8 g are sectional diagrams illustrating another embodiment of the manufacturing process of the phase-change memory element 200. - First, referring to
FIG. 8 a, afirst electrode 201 is formed on thesubstrate 202. Thesubstrate 202 can be a substrate comprising a complementary metal oxide semiconductor (CMOS) circuit, isolation structure, diode, or capacitor. The accompanying drawings show thesubstrate 202 in a plain rectangle in order to simplify the illustration. Herein, thefirst electrode 201 comprises phase-change material such as chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe. Further, thefirst electrode 201 also can be metal or metal alloy, such as Al, W, Mo, TiN, or TiW. - Next, a first
dielectric layer 203 is formed onfirst electrode 201. Thedielectric layer 203 can be silicon-containing compound, such as silicon nitride or silicon oxide. Referring toFIG. 8 b, thefirst dielectric layer 203 is patterned to form adielectric pillar 204. Thedielectric pillar 204 has a width of 20 nm˜500 nm, or 40 nm˜200 nm, such as 60 nm. - Next, referring to
FIG. 8 c, a phase-change layer 205 is conformally formed ondielectric pillar 204 and thefirst electrode 201 to cover the side walls and top surface of thedielectric pillar 204. The phase-change layer 205 comprises chalcogenide (In, Ge, Sb, Te or combinations thereof), for example GeSbTe or InGeSbTe. - Referring to
FIG. 8 d, the phase-change layer 205 formed on thedielectric pillar 204 andfirst electrode 201 is removed via back-etched, remaining a phase-change material spacer 206 covering the sidewalls of thedielectric pillar 204. - The phase-
change material spacer 206 can be a closed curve, such as a circular phase-change material spacer. It should be noted that the width of the phase-change material spacer 206 has a dimension less than the resolution limit of photolithography process. Further, the dimensions of phase-change material spacer 206 from top to bottom are the same, and the phase-change material spacer 206 is essentiality perpendicular to the first electrode and second electrode. The phase-change material spacer 206 has a width of 2 nm˜120 nm, or 10 mm˜50 nm, such as 20 nm. The height of the phase-change material spacer 206 is 1 nm˜200 nm, or 5 nm˜80 nm, such as 20 nm. - Referring to
FIG. 8 e, asecond dielectric layer 207 is formed on the substrate and subjected to a back-etched, covering the sidewalls of the phase-change material spacer 206. - Next, referring to
FIG. 8 f, asecond electrode 208 is formed on the first and seconddielectric layer change material spacer 206. - Finally, referring to
FIG. 8 g, the above structure is patterned and a thirddielectric layer 209 is formed to surround the pattern first and second electrodes, thereby defining an isolated phase-change memory element 200. - Accordingly, embodiments of the invention provide method for fabricating phase-change material spacer, wherein the width of the top and bottom surfaces can be less than the resolution limit of photolithography process. Since the dimensions of phase-change material spacer from top to bottom are the same and the phase and the phase-change layer is essentiality, the disclosed phase-change memory element exhibits great temperature uniformity when applying a voltage pulse. Moreover, the fabrication process is relatively simple and can accommodate various cell designs, and low cost can be maintained.
- While the invention has been described by way of example and in terms of preferred embodiment, it is to be understood that the invention is not limited thereto. To the contrary, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/079,840 US8216877B2 (en) | 2007-02-01 | 2011-04-05 | Phase-change memory and fabrication method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096103661A TWI347670B (en) | 2007-02-01 | 2007-02-01 | Phase-change memory and fabrication method thereof |
TW96103661 | 2007-02-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/079,840 Division US8216877B2 (en) | 2007-02-01 | 2011-04-05 | Phase-change memory and fabrication method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080203374A1 true US20080203374A1 (en) | 2008-08-28 |
Family
ID=39714848
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/010,885 Abandoned US20080203374A1 (en) | 2007-02-01 | 2008-01-30 | Phase-change memory and fabrication method thereof |
US13/079,840 Active US8216877B2 (en) | 2007-02-01 | 2011-04-05 | Phase-change memory and fabrication method thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/079,840 Active US8216877B2 (en) | 2007-02-01 | 2011-04-05 | Phase-change memory and fabrication method thereof |
Country Status (2)
Country | Link |
---|---|
US (2) | US20080203374A1 (en) |
TW (1) | TWI347670B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100163817A1 (en) * | 2008-12-30 | 2010-07-01 | Stmicroelectronics, S.R.L. | Self-heating phase change memory cell architecture |
US20130187120A1 (en) * | 2012-01-20 | 2013-07-25 | Micron Technology, Inc. | Memory cells having heaters with angled sidewalls |
GB2485938B (en) * | 2009-08-28 | 2014-02-26 | Ibm | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell |
US20230253214A1 (en) * | 2022-02-07 | 2023-08-10 | Nanya Technology Corporation | Semiconductor device structure having a profile modifier |
US11894259B2 (en) | 2022-02-07 | 2024-02-06 | Nanya Technology Corporation | Method for manufacturing the same having a profile modifier |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103346258B (en) * | 2013-07-19 | 2015-08-26 | 中国科学院上海微系统与信息技术研究所 | Phase-change memory cell and preparation method thereof |
CN112018234B (en) * | 2020-07-22 | 2021-10-15 | 厦门半导体工业技术研发有限公司 | Semiconductor device and method for manufacturing semiconductor device |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US6607974B2 (en) * | 2000-07-14 | 2003-08-19 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
US20030219924A1 (en) * | 2001-12-05 | 2003-11-27 | Stmicroelectronics S.R.L. | Small area contact region, high efficiency phase change memory cell and fabrication method thereof |
US6750079B2 (en) * | 1999-03-25 | 2004-06-15 | Ovonyx, Inc. | Method for making programmable resistance memory element |
US6830952B2 (en) * | 2002-08-09 | 2004-12-14 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
US20050030800A1 (en) * | 2003-08-04 | 2005-02-10 | Johnson Brian G. | Multilayered phase change memory |
US20060245236A1 (en) * | 2005-05-02 | 2006-11-02 | Zaidi Shoaib H | Memory device |
US20070018149A1 (en) * | 2005-07-22 | 2007-01-25 | Elpida Memory, Inc. | Semiconductor device and method of producing the same |
US7545668B2 (en) * | 2007-06-22 | 2009-06-09 | Qimonda North America Corp. | Mushroom phase change memory having a multilayer electrode |
US7667222B2 (en) * | 2004-10-21 | 2010-02-23 | Hitachi, Ltd. | Phase change memory featuring ferromagnetic layers in contact with phase change layer |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004011430B4 (en) | 2004-03-09 | 2008-06-19 | Qimonda Ag | Semiconductor memory device |
KR100566699B1 (en) * | 2004-08-17 | 2006-04-03 | 삼성전자주식회사 | Phase-changeable memory device and method of manufacturing the same |
US7812334B2 (en) * | 2006-04-04 | 2010-10-12 | Micron Technology, Inc. | Phase change memory elements using self-aligned phase change material layers and methods of making and using same |
-
2007
- 2007-02-01 TW TW096103661A patent/TWI347670B/en active
-
2008
- 2008-01-30 US US12/010,885 patent/US20080203374A1/en not_active Abandoned
-
2011
- 2011-04-05 US US13/079,840 patent/US8216877B2/en active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5177567A (en) * | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
US5789758A (en) * | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
US6750079B2 (en) * | 1999-03-25 | 2004-06-15 | Ovonyx, Inc. | Method for making programmable resistance memory element |
US6607974B2 (en) * | 2000-07-14 | 2003-08-19 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
US20030219924A1 (en) * | 2001-12-05 | 2003-11-27 | Stmicroelectronics S.R.L. | Small area contact region, high efficiency phase change memory cell and fabrication method thereof |
US6830952B2 (en) * | 2002-08-09 | 2004-12-14 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
US20050030800A1 (en) * | 2003-08-04 | 2005-02-10 | Johnson Brian G. | Multilayered phase change memory |
US7667222B2 (en) * | 2004-10-21 | 2010-02-23 | Hitachi, Ltd. | Phase change memory featuring ferromagnetic layers in contact with phase change layer |
US20060245236A1 (en) * | 2005-05-02 | 2006-11-02 | Zaidi Shoaib H | Memory device |
US20070018149A1 (en) * | 2005-07-22 | 2007-01-25 | Elpida Memory, Inc. | Semiconductor device and method of producing the same |
US7545668B2 (en) * | 2007-06-22 | 2009-06-09 | Qimonda North America Corp. | Mushroom phase change memory having a multilayer electrode |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100163817A1 (en) * | 2008-12-30 | 2010-07-01 | Stmicroelectronics, S.R.L. | Self-heating phase change memory cell architecture |
US8377741B2 (en) * | 2008-12-30 | 2013-02-19 | Stmicroelectronics S.R.L. | Self-heating phase change memory cell architecture |
GB2485938B (en) * | 2009-08-28 | 2014-02-26 | Ibm | Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell |
US20130187120A1 (en) * | 2012-01-20 | 2013-07-25 | Micron Technology, Inc. | Memory cells having heaters with angled sidewalls |
US8962384B2 (en) * | 2012-01-20 | 2015-02-24 | Micron Technology, Inc. | Memory cells having heaters with angled sidewalls |
US9343671B2 (en) | 2012-01-20 | 2016-05-17 | Micron Technology, Inc. | Memory cells having heaters with angled sidewalls |
US20230253214A1 (en) * | 2022-02-07 | 2023-08-10 | Nanya Technology Corporation | Semiconductor device structure having a profile modifier |
US11854832B2 (en) * | 2022-02-07 | 2023-12-26 | Nanya Technology Corporation | Semiconductor device structure having a profile modifier |
US11894259B2 (en) | 2022-02-07 | 2024-02-06 | Nanya Technology Corporation | Method for manufacturing the same having a profile modifier |
Also Published As
Publication number | Publication date |
---|---|
TW200834882A (en) | 2008-08-16 |
US8216877B2 (en) | 2012-07-10 |
US20110177667A1 (en) | 2011-07-21 |
TWI347670B (en) | 2011-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20090057640A1 (en) | Phase-change memory element | |
US8216877B2 (en) | Phase-change memory and fabrication method thereof | |
US7888155B2 (en) | Phase-change memory element and method for fabricating the same | |
US20080283812A1 (en) | Phase-change memory element | |
US10573807B2 (en) | Phase change memory element | |
US20090148980A1 (en) | Method for forming phase-change memory element | |
US20090008621A1 (en) | Phase-change memory element | |
US7521372B2 (en) | Method of fabrication of phase-change memory | |
US7679163B2 (en) | Phase-change memory element | |
CN101626060B (en) | Phase-change memory element and its manufacture method | |
JP4437299B2 (en) | Semiconductor device and manufacturing method thereof | |
US20060189045A1 (en) | Method for fabricating a sublithographic contact structure in a memory cell | |
US20090189142A1 (en) | Phase-Change Memory | |
US20090189140A1 (en) | Phase-change memory element | |
US20080186762A1 (en) | Phase-change memory element | |
US20080042117A1 (en) | Phase-change memory and fabrication method thereof | |
US20130200328A1 (en) | Phase change memory devices | |
US7759668B2 (en) | Memory device including phase-changeable material region and method of fabricating the same | |
KR100651756B1 (en) | Phase change memory device having phase change layer spacer, and fabricating method thereof | |
CN101150172A (en) | Phase change memory and its making method | |
KR100639999B1 (en) | Phase change memory device having phase change layer spacer, and fabricating method thereof | |
KR100842274B1 (en) | Phase change memory device with fine contact point and Method of fabricating the same | |
US20060166471A1 (en) | Memory apparatus and production method | |
KR20100019713A (en) | Phase change memory device having heating electrode and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: POWERCHIP SEMICONDUCTOR CORP., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: NANYA TECHNOLOGY CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: PROMOS TECHNOLOGIES INC., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: WINBOND ELECTRONICS CORP., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: POWERCHIP SEMICONDUCTOR CORP.,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: NANYA TECHNOLOGY CORPORATION,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: PROMOS TECHNOLOGIES INC.,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 Owner name: WINBOND ELECTRONICS CORP.,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHUO, YEN;HSU, HONG-HUI;REEL/FRAME:020943/0344 Effective date: 20080218 |
|
AS | Assignment |
Owner name: PROMOS TECHNOLOGIES INC.,TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;AND OTHERS;REEL/FRAME:024061/0347 Effective date: 20091203 Owner name: PROMOS TECHNOLOGIES INC., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;AND OTHERS;REEL/FRAME:024061/0347 Effective date: 20091203 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |