US20080236745A1 - Method and apparatus for fabricating or altering microstructures using local chemical alterations - Google Patents
Method and apparatus for fabricating or altering microstructures using local chemical alterations Download PDFInfo
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- US20080236745A1 US20080236745A1 US11/931,230 US93123007A US2008236745A1 US 20080236745 A1 US20080236745 A1 US 20080236745A1 US 93123007 A US93123007 A US 93123007A US 2008236745 A1 US2008236745 A1 US 2008236745A1
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Abstract
Description
- This application is a divisional of U.S. patent application Ser. No. 10/696,771, filed Oct. 29, 2003, which is herein incorporated by reference in its entirety.
- 1. Field of the Invention
- The present invention generally relates to a method and apparatus for fabricating or altering microstructures. More specifically, the present invention relates to fabricating or altering submicrostructures using local chemical alterations facilitated by a heating means, e.g., a thermal transducer or a nanoheater.
- 2. Description of the Related Art
- Devices such as integrated circuits, lithographic reticles/masks, and recording media, among others, comprise various microstructures that perform critical functions within the device. Such microstructure are generally formed on substrates (e.g., semiconductor or glass substrates, plastic discs, and the like) and include portions of electronic circuits (e.g., conductive lines, vias, transistors, insulative layers) and optical circuits, such as transparent, opaque, and phase-shifting regions of the reticles/masks, reflective regions of recording media, and the like.
- Methods used to repair, as well as manufacture the microstructures exploit a plurality of technologies, such as laser heating, thermo-mechanical machining, electron and ion beam machining, along with an array of technologies used in fabrication of integrated circuits. However, in applications such as making alterations or repairing defects in lithographic reticles/masks or integrated circuits, patterning information in recording media, and the like, these technologies are frequently inefficient or cannot provide a localized action (i.e., resolution) needed to manufacture a desired microstructure or correct the defect.
- Therefore, there is a need in the art for an improved method and apparatus for fabricating or altering microstructures.
- In one embodiment, the present invention discloses a method of fabricating or altering microstructures (or submicrostructures such as nanostructures in one embodiment) using a heating means such as a thermal transducer or a nanoheater that facilitates a local chemical reaction to form or alter a nanostructure. Exemplary applications of the method include forming and altering portions of integrated circuits and lithographic reticles/masks, patterning information on recording media, and the like.
- Another aspect of the invention is an apparatus performing the inventive method.
- The teachings of the present invention can be readily understood by considering the following detailed description in conjunction with the accompanying drawings, in which:
-
FIG. 1 depicts a flow diagram of a method for fabricating or altering microstructures in accordance with one embodiment of the present invention; -
FIG. 2 depicts a schematic diagram of an exemplary apparatus performing the method ofFIG. 1 ; -
FIGS. 3A-3D depict schematic diagrams of various embodiments of a thermal transducer and nanoheater of the kind that may be used in the apparatus ofFIG. 2 ; -
FIG. 4 depicts a series of exemplary graphs illustrating dependence of local temperature distribution and chemical reaction rate using the nanoheater (means of heating) ofFIG. 3D ; -
FIG. 5 depicts a flow diagram illustrating embodiments of a portion of the method ofFIG. 1 in various applications of the present invention; -
FIGS. 6A-6D depict a series of schematic, top plan views of objects having microstructures being fabricated using the method ofFIG. 1 ; and -
FIGS. 7A-7F depict a series of schematic, cross-sectional views of a substrate having a field effect transistor being fabricated using the method ofFIG. 1 . - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures.
- It is to be noted, however, that the appended drawings illustrate only exemplary embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
- The present invention is a method and apparatus for fabricating or altering microstructures using a heating means, e.g., a thermal transducer or a nanoheater that facilitates a local chemical reaction to form a microstructure. Throughout the present disclosure, the terms “thermal transducer” and “nanoheater” are interchangeably used, but it should not be interpreted as limiting the present invention. However, generally we refer to thermal transducer where a larger heat spot is reduced via geometrical to a smaller heat spot while the nanoheater generates a very small heat spot directly. Herein, the term “microstructure” relates to portions of devices and integrated circuits that are formed or repaired using the inventive method. It should also be noted that the present invention may operate at a very localized region of an object, to fabricate or alter a “submicrostructure”, e.g., a nanostructure on the object. Thus, by fabricating or altering the “submicrostructure” of the object, it is understood that a “microstructure” of the device can be altered or fabricated. The term “local” relates to a very small region of the object, e.g., where a nanostructure being altered or fabricated is less than or equal to an area of 0.1×0.1 micrometer square. Thus, heating a local region of the object means that a small region of the object is locally heated such that a chemical reaction may occur to produce a nanostructure having an approximate area of 0.1×0.1 micrometer square or less.
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FIG. 1 depicts a flow diagram for one embodiment of the inventive method for fabricating microstructures as amethod 100. Themethod 100 includes the processing steps that are performed upon an object where at least one microstructure is formed or altered. -
FIG. 2 depicts a schematic diagram of anexemplary apparatus 200 performing the method ofFIG. 1 in accordance with one embodiment of the invention. The images inFIG. 2 are not depicted to scale and are simplified for illustrative purposes. To best understand the invention, the reader should simultaneously refer toFIG. 1 andFIG. 2 . - The
method 100 starts atstep 101 and proceeds tostep 102. Atstep 102, an object 202 (e.g., semiconductor or glass substrate, plastic disc, and the like) having one ormore regions 204 where a microstructure should be formed (oneregion 204 is shown) is provided to theapparatus 200 and positioned on asupport pedestal 206, which comprises typically a piezo electric module. In operation, asystem controller 220, in a conventional manner, controls operation of theapparatus 200. - At
step 104, reactants that can be used to form the desired microstructure are selectively supplied, at an ambient temperature, to theregion 204 or, alternatively, to a plurality of such regions. For most applications, a rate of a chemical reaction is exponentially proportional to the absolute temperature. As such, at the ambient temperature, the reactants do not react or react at a very low rate. - At
step 106, means for heating aregion 210 is positioned proximate theregion 204. In one embodiment, the means for heating aregion 210 may comprise a thermal transducer or a nanoheater, which is attached 212 (e.g., an electrical nanoheater) to aflexible cantilever 214. Such thermal transducers and nanoheaters are disclosed, for example, in commonly assigned U.S. Pat. No. 6,532,125, issued Mar. 11, 2003, and U.S. Pat. No. 6,433,310, issued Aug. 13, 2002, which are incorporated herein by reference. Salient features of the nanoheaters and thermal transducers are discussed below in reference toFIG. 3 , wherein suffixes “a” through “d” are used to differentiate between various embodiments of the thermal transducer and nanoheaters. In the depicted preferred embodiment, the means for heating theregion 210 illustratively comprises anelectric nanoheater 212 d. - The
nanoheater 212 d is located near afirst end 216 of thecantilever 214 whilesecond end 224 is coupled to amotion controller 218 that, in operation, positions thenanoheater 212 d proximate to theregion 204. In one embodiment, themotion controller 218 determines positioning of both thenanoheater 212 d andsupport pedestal 206. Thenanoheater 212 d comprises a heat-emitting surface facing theregion 204 and having topographic dimensions in a range from about 10 to 100 nm. - At
step 108, the means for heating theregion 212, e.g., a nanoheater, is energized (i.e., heated to a pre-determined temperature) viainterface 222 using apower supply 208. By interface we mean, for example, electrical leads or an optical fiber, which supplies the power to a thermal transducer or nanoheater. Typically, thenanoheater 212 is energized using one or more short pulses of electrical current, radiant energy, and the like. Generally, theinterface 222 is disposed within thecantilever 214. In an alternative embodiment (not shown),step 108 may be performed prior to step 106. - At
step 110, thenanoheater 212 d locally increases temperature of the reactants disposed proximate to the heat-emitting surface of the nanoheater (i.e., in the region 204). The high temperature of the reactants facilitates a local chemical reaction (discussed in detail below in reference toFIG. 4 ) between the reactants that forms, in theregion 204, the desired microstructure. Upon completion of the local chemical reaction, thepower supply 208 terminates energizing thenanoheater 212, and themotion controller 218 moves the nanoheater away from theregion 204. - At
step 112, themethod 100 queries if all microstructures have been formed or altered. If the query ofstep 112 is negatively answered, themethod 100 proceeds to step 104 to continue fabrication or alteration of the microstructures on thesubstrate 202. If the query ofstep 112 is affirmatively answered, themethod 100 proceeds to step 114, where themethod 100 ends. -
FIGS. 3A-3D depict schematic diagrams of exemplary embodiments of thenanoheater 212. The images inFIGS. 3A-3D are not depicted to scale and are simplified for illustrative purposes.FIGS. 3A-B are examples for thermal transducer where a larger heat spot is “concentrated” via geometrical means to a smaller heat spot.FIGS. 3C-D are examples for nanoheaters, where a small heat spot is directly generated. -
FIG. 3A depicts a schematic diagram of a laser-poweredthermal transducer 212 a comprising alens 312 that focuses alaser beam 318 on a thermallyconductive plate 314, which could be part of a cantilever having a nano-tip 316. In operation, thelaser beam 318 heats theplate 314 that conducts the heat to the nano-tip 316 disposed proximate theregion 204 to facilitate the local chemical reaction. -
FIG. 3B depicts a schematic diagram of an electricalthermal transducer 212 b comprising aheater element 328 embedded in a thermallyconductive plate 322 and power leads, or transmission lines, 324. Theplate 322 has a nano-tip 326 that operates similar to the nano-tip 316. -
FIG. 3C depicts a schematic diagram of anotherelectrical nanoheater 212 c comprising aresistive element 338 applied to a nano-tip 336 of asupport 332, as well astransmission lines 334. Thesupport 332 is formed from a material having low thermal conductivity to facilitate, in operation, high temperature of the nano-tip 338 and, as such, high rate of the local chemical reaction. -
FIG. 3D depicts a schematic diagram of a preferredelectrical nanoheater 212 d comprisingheater element 342 electrically coupled totransmission lines 344 that, together, form theinterface 222. In one embodiment, theheater element 342 andtransmission lines 344 are embedded in thecantilever 214. In operation, a heat-emittingsurface 346 of the nanoheater is disposed proximate theregion 204. In one embodiment, an optional thermally conductive medium (e.g., chemically inert lubricant) may be applied to the heat-emittingsurface 346 to increase, in theregion 204, thermal coupling between theheater element 342 and the reactants. In another embodiment, a “soft contact” (i.e., contact excerpting no pressure) may be established between theheater element 342 andsubstrate 202 to minimize thermal losses in a conduction pass from the heater element to theregion 204. In a further embodiment, the reactants may be used to form the conduction pass. - The following considerations may be used as guidelines when choosing a material of the heater element 342: (i) it is preferred to use chemically inert materials (e.g., gold (Au), platinum (Pt), and the like) and/or apply protective coatings (e.g., silicon dioxide (SiO2) to the heat-emitting
surface 346, and (ii) the material should have a high melting point. When theheater element 342 has a direct contact with thesubstrate 202, use of a “hard” material (e.g., platinum-iridium (Ptlr) alloy) is advantageous in order to avoid wear out of the heater element. To minimize spreading of the heat, a material with low heat conductivity (λ<100 W/mK), as well as the material with a negative temperature dependence of the heat conductivity may be chosen. While low heat conductivity of the heater element is advantageous for confining the heat, it is less an advantage for heating efficiently without any loading from the object. In order to minimize heating of thetransmission lines 344, it is preferred that the resistivity or sheet resistance of the material of the heater element is large (e.g., >1 Ω per square). The heater element may generally be of any kind of shape (e.g., square, annular, and the like). When the substrate requires heat spots with a certain shapes, a wave-like shape may be advantageous. - To minimize spreading of the heat in the
nanoheater 212 d, thetransmission lines 344 should have high electrical conductivity and large cross-sectional area, as well as, preferably, low thermal conductivity. It is preferred that the transmission lines do not protrude through alower surface 348 of thecantilever 214. The choice of a material of thecantilever 214 may be guided by the Young's modulus of the material, which along with other parameters (e.g., dimensions and shape), determine a spring constant of the cantilever, as well as by thermal conductivity of the material. Spring constants can vary from 0.0001 N/m to 1000 N/m depending on a surface hardness of theheater element 342 andsubstrate 202. Generally, materials with high thermal conductivity are preferred. One suitable material for thecantilever 214 may be intrinsic silicon (Si). -
FIG. 4 depicts anexemplary graph 400 that illustrates dependence of a calculated normalized steady state temperature (y-axis 402) and a normalized chemical reaction rate (y-axis 404) from a distance (x-axis 406) from a center of thenanoheater 212 d. In this calculation an approximate “semi-infinite” object is assumed. In one embodiment, thenanoheater 212 d has a 20 nm square heat-emittingsurface 346 that is in a “soft” contact with thesubstrate 202. In the depicted embodiment, the attained temperature in the center (i.e., at the distance “0”) of theregion 204 is about 300 degrees Celsius (e.g., it is normalized—temperature will scale with power deposited from the nanoheater on the substrate—the resulting temperature will depend (to a first order) on thermal conductivity of object) and a width 410 (e.g., the width bar is not at the 50% level) of the temperature distribution at 50% of apeak 408 is about 56 nm. In this embodiment, a width of the distribution of a reaction rate for a chemical reaction having a 50 kJ/mol activation barrier is about 20 nm, or, approximately, three times narrower than thewidth 410 of the temperature distribution of theregion 204. For comparison, at optical frequencies, a minimal width of the focusing spot of a laser beam is about 300 nm, or about 5-6 times greater than thewidth 410. - In exemplary embodiments discussed below, the
method 100 is used to perform local chemical alterations and form microstructures using various etch and deposition processes. The fabricated microstructures include portions of integrated circuits and field effect transistors, defect-eliminating features, and information patterns written on recording media, among other microstructures. -
FIG. 5 depicts optional sub-steps 104A-104D that may be a part ofstep 104 in the exemplary embodiments of themethod 100. Specifically, reactants for the local chemical reactions may be provided in a liquid phase (sub-step 104A) or in a gaseous phase (sub-step 104B) or a solid phase (not shown). Liquid phase reactants may be deposited on thesubstrate 202 in a form of a thin layer (sub-step 104C) covering a substantial portion of the substrate surface (e.g., entire substrate surface). Alternatively, liquid reactants may be deposited in the form of droplets (sub-step 104D) which are substantially limited to theregions 204 of the substrate. In a further embodiment, depending on a specific application of themethod 100, the reactants may be provided using any combination of sub-steps 104A-104D, e.g., some reactants may be provided in the liquid phase, while at least one reactant is provided in the gaseous phase. -
FIGS. 6A-6D depict a series of exemplary applications of themethod 100 for fabricating defect-eliminating microstructures and/or repairing lithographic reticles/masks and integrated circuits. Depending on a specific chemical composition of the reactants, themethod 100 can facilitate at least one of localized deposition and etch reactions. In these embodiments, the reactants are illustratively applied in a liquid phase and in the form of a thin layer over asurface area 610 that is substantially greater that theregion 204 of the substrate 202 (discussed above in reference toFIG. 2 ).FIGS. 6A and 6C depict a state of the localized deposition and etch chemical reactions, respectively, prior to energizing the nanoheater (means for heating) 212 (e.g.,nanoheater 212 d). Accordingly,FIGS. 6B and 6D depict the results of the corresponding reactions when facilitated by thenanoheater 212 d (shown after the remaining reactants have been removed). The images inFIGS. 6A-6D are not depicted to scale and are simplified for illustrative purposes. -
FIG. 6A depicts thesubstrate 202 illustratively comprisinglines nanoheater 212 d, can form a desired interconnecting material (e.g., same material as that of thelines 602 or 604). In a further embodiment, theregion 204 may include a contact hole (i.e., via) or a contact pad, as well aslines lines -
FIG. 6B depicts amicrostructure 606 interconnecting thelines nanoheater 212 may be energized using one or more short pulses of an electric current. Depending on the application, themicrostructure 606 may be either a defect-eliminating feature (e.g., a missing or erroneously burned jumper) or a new feature of the integrated circuit or lithographic reticle/mask. As discussed above, beyond theregion 204, the rate of the same chemical reaction in negligible. -
FIG. 6C depicts an alternative embodiment when aline 612 is a solid conductive line that should be interrupted, or opened. In this embodiment, the reactants are selected such that, when react at high temperature produced by thenanoheater 212, can remove (i.e., etch) the material of theline 612. In a further embodiment, theline 612 may be formed from a dielectric material, such as an optically transparent phase-shifting portion of a lithographic reticle, a dielectric pad of a capacitor, and the like. -
FIG. 6D depicts a result of the localized chemical reaction of the kind that may etch and remove the material of theline 612 in theregion 204 heated by the means for heating, e.g., a nanoheater, 212, thus forming agap 614 betweenportions line 612. Similar to the embodiment ofFIGS. 6A-6B , beyond theregion 204, the rate of the same chemical reaction in negligible. Thegap 614 may be considered as a defect-eliminating feature (e.g., when theline 612 was erroneously formed as the solid line) or a new feature (e.g., programming feature) of the integrated circuit or an opaque region of the lithographic reticle. Defects having topographic dimensions less than the region 204 (e.g., metallic droplets in a transparent portion of the lithographic reticles/masks) may also be removed using the same localized etch reaction. In another application, localized etch reaction may be used to etch or decompose low-k dielectrics, prepare samples for focused ion beam (FIB) and scanning electron microscope (SEM) analysis, and the like. -
FIGS. 7A-7F illustrate an exemplary application of themethod 100 during fabricating of a field effect transistor (FET) using a sequence of localized chemical vapor deposition (CVD) processes that use gaseous phase reactants. During such a CVD process, precursors are absorbed on exposed surfaces. In this application, local decomposition of the precursors by means of pyrolysis is initiated in the heat spot (i.e., region 204) generated by the means for heating theobject 210. At least one of the products of the CVD gas becomes a solid and remains on a surface of the substrate after such local heat treatment. The precursor gas could be changed and different materials may be deposited to build electronic circuits. For example, a gaseous precursor containing a copper compound can be used to trace out patterns of missing or broken copper circuit lines on a chip with a resolution previously not possible by presently known techniques. Such chemical alterations of both metals and insulators may be performed without use of a mask, which is an advantage of the invention. The images inFIGS. 7A-7F are not depicted to scale and are conventionally simplified for illustrative purposes. -
FIG. 7A depicts a substrate 702 (e.g., silicon (Si) wafer) having a silicon dioxide (SiO2)layer 704 where a seed germanium (Ge)layer 706 is formed using non-selective Ge chemistry and a localized CVD process facilitated by the means for heating the object, e.g., ananoheater 212 d. -
FIG. 7B depicts thesubstrate 702 after the Ge layer 708 (i.e., channel region) has been grown, from the seed layer, in the heat spot of thenanoheater 212 d using selective Ge chemistry and the localized CVD process. -
FIG. 7C depicts thesubstrate 702 after source and drainregions 710 of the transistor have been sequentially formed, in a heat spot of thenanoheater 212 d, using selective chemistry and the localized CVD process. -
FIG. 7D depicts thesubstrate 702 after metal contacts 712 (e.g., gold (Au), and the like) have been sequentially formed, in a heat spot of thenanoheater 212 d, using the localized CVD process. -
FIGS. 7E and 7F depict thesubstrate 702 after a gate dielectric 714 (e.g., GeO2) and a gate electrode 716 (e.g., Au) have been formed using the respective conventional CVD processes. - In yet another application, the
method 100 may be used to form an information-containing portion of recording media, e.g., write information on digital video (DVD) discs and compact “read only” (CD-ROM) disks. Such disks may use Polymethyl metacrylrate (PMMA) material that is spun over a surface of the disc. The means for heating the object can initialize a free radical vinyl polymerization process to form locally the PMMA-plastic material. A radical starter may further be used to enhance the process. The unreacted (i.e., unheated) regions are washed off to complete fabrication of a PMMA mask. Such a mask may be used in a servo loop during patterning optical disk drives. - In still another application, the
method 100 may be used to facilitate and enhance a broad range of localized biochemical reactions, e.g., protein-related reactions. - While the foregoing is directed to the illustrative embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (17)
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US11/931,242 Expired - Fee Related US8181594B2 (en) | 2003-10-29 | 2007-10-31 | Method and apparatus for fabricating or altering microstructures using local chemical alterations |
US13/447,982 Expired - Fee Related US8999458B2 (en) | 2003-10-29 | 2012-04-16 | Method and apparatus for fabricating or altering microstructures using local chemical alterations |
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US7655544B2 (en) * | 2005-10-21 | 2010-02-02 | Utah State University | Self-assembled nanostructures |
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KR101318291B1 (en) * | 2007-07-16 | 2013-10-16 | 삼성전자주식회사 | Microheater unit, microheater array, method for manufacturing the same and electronic device using the same |
KR101338350B1 (en) * | 2007-07-16 | 2013-12-31 | 삼성전자주식회사 | Method for forming nanostructure or poly silicone using microheater, nanostructure or poly silicone formed by the method and electronic device using the same |
KR101318292B1 (en) * | 2007-11-30 | 2013-10-18 | 삼성전자주식회사 | Microheater, microheater array, method for manufacturing the same and electronic device using the same |
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Also Published As
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US20080057719A1 (en) | 2008-03-06 |
US8999458B2 (en) | 2015-04-07 |
US20050095858A1 (en) | 2005-05-05 |
US7329361B2 (en) | 2008-02-12 |
US20120201956A1 (en) | 2012-08-09 |
US8181594B2 (en) | 2012-05-22 |
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