US20080246093A1 - Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern - Google Patents
Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern Download PDFInfo
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- US20080246093A1 US20080246093A1 US12/121,041 US12104108A US2008246093A1 US 20080246093 A1 US20080246093 A1 US 20080246093A1 US 12104108 A US12104108 A US 12104108A US 2008246093 A1 US2008246093 A1 US 2008246093A1
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- spacer
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- nfet
- silicide
- contact
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000002184 metal Substances 0.000 title abstract description 18
- 229910052751 metal Inorganic materials 0.000 title abstract description 18
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 125000006850 spacer group Chemical group 0.000 claims abstract description 96
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 56
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011229 interlayer Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 17
- 230000005669 field effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 37
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910003915 SiCl2H2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
Definitions
- the present invention relates to the fabrication of semiconductor integrated circuits, and more specifically to a structure and method of making a semiconductor integrated circuit which is tolerant of mis-alignment of the metal contact pattern to the gate pattern.
- a metal contact such as tungsten is used to connect the transistor gate, source/drain, and body to backend wiring.
- a conventional method for forming a metal contact will be briefly explained.
- FIGS. 10 and 11 illustrate stages in conventional fabrication of a semiconductor integrated circuit.
- a conventional method of forming a metal contact in a semiconductor integrated circuit includes a step of forming a gate stack 950 of a positive field effect transistor (PFET) 901 and a gate stack 960 of a negative field effect transistor (NFET) 903 , on a substrate 900 which includes a silicon substrate 902 , a buried oxide (BOX) layer 904 and a semiconductor layer 906 . Then oxide spacers 972 , 982 are formed on side walls of the gate stacks 950 , 960 followed by formation of source drain (S/D) extensions 920 , 922 , 924 , 926 in a semiconductor layer 906 .
- S/D source drain
- nitride spacers 974 , 984 are formed on the oxide spacers 972 , 982 respectively. Subsequently, S/D regions 912 , 914 , 916 , 918 are formed. Further, using the nitride side walls 974 , 984 as masks, metal silicide regions 932 , 934 , 936 , 938 are formed on the S/D regions 912 , 914 , 916 , 918 , respectively. Next, a contact liner 988 , commonly Si 3 N 4 , is deposited over the substrate 900 , followed by deposition of an interlayer dielectric layer (IDL) 990 and planerization.
- IDL interlayer dielectric layer
- photolithographic and etching techniques are used to pattern the IDL 990 , forming contact openings 992 , 994 , 996 , 998 that expose the silicide on the S/D regions as illustrated in FIG. 11 .
- the process typically proceeds by a first anisotropic etch process to form openings in the interlayer dielectric 990 stopping on the contact liner 988 , followed by a second anisotropic etch through the contact liner 988 , using the silicide 932 , 934 , 936 , 938 as an etching stop.
- the pattern for the contact openings is inevitably slightly mis-aligned to the gate pattern.
- at least a portion of a contact opening may be mis-aligned over the side walls 974 , 984 .
- the etch process designed to etch away the contact liner 988 typically nitride, has no selectivity to the spacer 974 , 984 , which is also typically nitride. Therefore, at least a part of the spacers 974 , 978 may be etched through, exposing the underlying semiconductor layer 906 .
- the silicide 932 , 934 , 936 , 938 on the S/D regions 912 , 914 , 916 , 918 are formed by using the side walls 974 , 984 , as masks, no silicide is deposited beneath the spacers 974 , 984 in the semiconductor layer 906 . Accordingly, the exposed portion of the substrate may be etched, causing problems such as a short 993 , 997 between a metal contact and the substrate, and causing unexpected parasitic capacitance.
- the semiconductor layer 906 is exposed between the bottom of the spacers 974 , 984 and the edges 931 , 933 , 935 , 937 of the silicide 932 , 934 , 936 , 938 even though the spacers 974 , 984 are used as masks in forming silicide 932 , 934 , 936 , 938 , increasing the possibility of causing a short between a metal contact and the substrate.
- a method of fabricating a field effect transistor includes steps of forming a gate stack on a top surface of a semiconductor substrate and a first spacer formed on a sidewall of the gate stack; forming, in or on the semiconductor substrate, a silicide adjacent to the first spacer; forming a second spacer covering the surface of the first spacer; forming a contact liner over at least the gate stack, the second spacer and the silicide; forming an interlayer dielectric over the contact liner; forming an opening to expose the contact liner over the silicide; and extending the opening through the contact liner to expose the silicide without exposing the substrate.
- the second spacer further covers at least a portion of the silicide so that the semiconductor layer is not exposed even if a gap between the second spacer and the silicide exists.
- FIGS. 1 through 7 illustrate stages in fabrication of a PFET and an NFET according to an embodiment of the invention.
- FIG. 8 illustrates a stage in fabrication of a PFET and an NFET according to another embodiment of the invention.
- FIG. 9 shows a flow of method for fabricating a semiconductor circuit according to an embodiment of the invention.
- FIGS. 10 and 11 illustrate conventional stages in fabrication of a PFET and an NFET.
- FIGS. 1 through 7 illustrate stages in processing to form a PFET 101 and an NFET 103 according to an embodiment of the invention.
- a PFET 101 and an NFET 103 are formed on a substrate 100 .
- the substrate 100 preferably includes a silicon substrate 102 , buried oxide (BOX) layer 104 , a semiconductor layer 106 and a trench isolation region 140 .
- the substrate 100 may be a bulk semiconductor substrate such as silicon.
- the invention is not limited to silicon substrates but other types of semiconductors such as III-V compound semiconductor materials, e.g. gallium arsenide (GaAs), may be used.
- the PFET 101 and NFET 103 include gate stacks 150 , 160 , channel regions 108 , 110 , source drain extensions 120 , 122 , 124 , 126 , S/D regions 112 , 114 , 116 , 118 , silicide S/D regions (hereinafter “silicide”) 132 , 134 , 136 , 138 in the S/D regions respectively.
- the silicide may include, for example, titanium (Ti), cobalt (Co), Nickel (Ni), tungsten (W) or platinum (Pt).
- the gate stacks 150 , 160 may further include gate dielectric layers 152 , 162 on the channel regions 108 , 110 , and gate conductor portions 154 , 164 , such as polysilicon. Metal lower resistance portions 156 , 166 may also be included in some embodiment.
- multiple spacers 172 , 174 , 182 , 184 are preferably formed. Alternatively, a single spacer may be deposited on the side walls of each gate stack 150 , 160 .
- the spacers 174 , 184 preferably include silicon nitride (Si 3 N 4 ). The spacers 174 , 184 are used as masks in the formation of the silicide 132 , 134 , 136 , 138 in the S/D regions 112 , 114 , 116 , 118 .
- the S/D regions 112 , 114 , 116 , 118 may be raised S/D regions, which may be formed by selective epitaxial growth.
- the silicide 132 , 134 , 136 , 138 may be formed by a method such as chemical vapor deposition (CVD) of silicide, or metal sputtering followed by an anneal.
- CVD chemical vapor deposition
- layers of silicide are formed on the S/D regions 112 , 114 , 116 , 118 .
- the layers of silicide preferably grow in contact with the outer surfaces of the spacers 174 , 184 so that semiconductor layer 106 is not exposed.
- the silicide may be formed by metal sputtering which preferably includes the steps of (1) sputtering metal into the S/D regions 112 , 114 , 116 , 118 , using the spacers 174 , 184 as masks, (2) performing a first annealing at about 200 to 500° C., (3) removing non-reacted metal, and (4) performing a second annealing at about 400 to 750° C. Since the spacers 174 , 184 are used as masks, silicide 132 , 134 , 136 , 138 are preferably formed in contact with the bottom of the spacers 174 , 184 so that the semiconductor layer 106 is not exposed.
- a gap between the silicide 132 , 134 , 136 , 138 and the corresponding spacers 174 , 184 may be formed. That is, the semiconductor layer 106 may exposed between the bottom portion of the spacers 174 , 184 and the edges 133 , 135 , 137 , 139 of the silicide 132 , 134 , 136 , 138 .
- the dielectric layer 149 is formed over the top surface of the substrate 100 .
- the dielectric material 149 is different than the mask spacers 174 , 184 ; for example if mask spacers 174 , 184 are nitride, the dielectric layer 149 is preferably oxide.
- the formation of the layer 149 preferably includes (1) applying a precursor, such as tetra ethyl ortho silicate (TEOS), SiH 4 , SiCl 2 H 2 , over the substrate 100 , and (2) applying heat to grow the oxide layer 149 .
- TEOS tetra ethyl ortho silicate
- Heat in step (2) is preferably applied at a temperature so as not to oxidize the silicide 132 , 134 , 136 , 138 .
- the oxide layer 149 is preferably be grown at a temperature in the range about 300° C. to 400° C.
- the preferable temperature is about 700° C. or less when the silicide includes Co.
- the thickness of the oxide layer 149 is preferably about 100 ⁇ to 400 ⁇ , most preferably about 160 ⁇ to 200 ⁇ .
- the thickness of the oxide layer 149 is preferably thinner than the nitride spacers 174 , 184 , but sufficient thick so as to overlap the edges 133 , 135 , 137 , 139 of the silicide 132 , 134 , 136 , 138 so as to cover any gap between the edges 133 , 135 , 137 , 139 of the silicide and the nitride spacers 174 , 184 .
- the spacers 174 , 184 , gate stacks 150 , 160 , silicide 132 , 134 , 136 , 138 are covered by the oxide layer 149 .
- a layer 149 including silicon carbide (SiC) may be deposited.
- the layer 149 may be formed by SiH4 and CH4 reaction in a CVD chamber.
- Preferable reaction temperature is about 400° C.
- Thickness of the formed SiC layer 149 is preferably about 500 to 1000 ⁇ .
- the oxide layer 149 is etched back by an anisotropic etch, preferably reactive ion etching (RIE), to form spacers 142 , 144 .
- the spacers 142 , 144 cover the surface of the spacers 174 , 184 respectively.
- the spacers 142 , 144 overlap the inner edges of the silicide 132 , 134 , 136 , 138 at portions 133 , 135 , 137 , 139 respectively so that junctions between silicide 132 , 134 , 136 , 138 and spacers 174 , 184 are covered by the spacers 142 , 144 . Accordingly, even if a gap exists between the silicide and the spacers 174 , 184 , the oxide layers 142 , 144 cover the gap so that the semiconductor layer 106 is not exposed.
- RIE reactive ion etching
- a contact liner 188 is applied over the substrate 100 .
- the contact liner preferably is a different material than the spacers 142 , 144 , and in the case of oxide spacers, 142 , 144 , preferably includes silicon nitride, for example Si 3 N 4 .
- the thickness of the contact liner 188 is preferably about 300 to 1500 ⁇ .
- an interlayer dielectric (ILD) 190 which may include a low-k dielectric material, a dielectric such as borophosphosilicate glass (BPSG) or high density plasma (HDP) oxide, is deposited and planerized.
- the thickness of the ILD 190 is preferably about 3000 to 5000 ⁇ .
- a two-step selective etch process is used to form the contact openings.
- photolithographic and anisotropic etching techniques such as RIE, is used to pattern the interlayer dielectric 190 , to form contact openings 192 , 194 , 196 , 198 that expose the contact liner 188 .
- the etching is preferably selective to the contact liner 188 so that the etching is stopped on the contact liner 188 .
- One skilled in the art would be able to arrange conditions for the etching to achieve the desired selectivity.
- FIG. 5 shows an example where the contact opening pattern is mis-aligned to the gate pattern.
- the contact openings 194 , 198 are formed with unintended short distances d 1 , d 2 from the gate stacks 150 , 160 respectively.
- a second etch step uses process conditions where the etching is selective to the spacers 142 , 144 and also selective to the silicide 132 , 134 , 136 , 138 , so that the contact liner 188 is etched back to the surfaces 191 , 193 , 195 , 197 of the silicide.
- spacers 142 , 144 are not etched back by the second etch process, so that the substrate 100 , specifically the semiconductor layer 106 , is not exposed at the bottom of the contact openings 192 , 194 , 196 , 198 .
- metal such as Ti, TiN, W
- contacts 202 , 204 , 206 , 208 by for example sputtering or chemical vapor deposition (CVD), followed by chemical mechanical polishing (CMP).
- CVD chemical vapor deposition
- CMP chemical mechanical polishing
- the final structure is illustrated in FIG. 7 .
- the contacts 202 , 204 , 206 , 208 are in direct contact with the silicide 132 , 134 , 136 , 138 and are not in contact with the semiconductor layer 106 , in the case of mis-alignment.
- FIG. 8 illustrates a PFET 301 and an NFET 303 according to another embodiment of the invention.
- Spacers 374 adjacent the PFET 301 are preferably thicker than spacers 384 adjacent the NFET 303 . It is preferable to make the contact pitch constant for ease of connectivity with upper layers, and not too large to minimize the size of the resulting semiconductor integrated circuit. Therefore, PFET 301 tends to be more prone to mis-alignment of the metal contact to the gate pattern.
- an additional spacer 340 such as an oxide layer or a SiC layer, according to the present invention is deposited over only a PFET 301 .
- a second spacer 340 is formed only over spacers 374 on the side walls of a gate stack of the PFET 301 .
- the spacer 374 preferably has about 750 ⁇ maximum thickness, and more preferably the thickness of the spacer 374 is about 100 to 300 ⁇ .
- the spacer 340 may be formed by arranging the method as illustrated in FIGS. 1 through 7 to mask an NFET during the formation of the spacer 374 on a gate stack 350 of the PFET 301 .
- the gate stack 350 of the PFET 301 , the gate stack 360 of the NFET 303 , silicide 332 , 334 , 336 , 338 and spacers 374 , 384 may be formed on the substrate 300 .
- a contact liner 388 such as silicon nitride, may be formed to first cover only the NFET 303 , while masking the PFET region. The mask is removed from the PFET region.
- the NFET region is masked and the outer spacer 340 may be formed only on the spacer 374 adjacent the PFET by means of RIE, for example, followed by a formation of a contact liner 388 only on the PFET 301 .
- the mask over the NFET is removed, and the ILD and contact openings are formed as in FIGS. 4-7 described above.
- FIG. 9 shows a flow of method for fabricating a semiconductor circuit according to an embodiment of the invention.
- a gate stack on a top surface of a semiconductor substrate is formed, and then a first spacer is formed on a sidewall of the gate stack (Step 500 ).
- the first spacer may include multiple spacers, where the outer portion of the first spacer is preferably silicon nitride.
- a silicide self-aligned to the first spacer is deposited in/or on the semiconductor substrate (Step 502 ).
- the contact liner is a different material than the second spacer.
- the contact liner is preferably silicon nitride.
- the contact liner is used as an etch stop layer in a subsequent first RIE, discussed below.
- an interlayer dielectric such as a low-k material, BPSG or HDP oxide, over the contact liner is deposited (Step 508 ).
- the ILD is preferably different than the contact liner.
- a metal contact opening through the ILD is formed to expose the contact liner over the silicide (Step 510 ).
- a first RIE of the ILD selective to the contact liner is preferably used.
- the contact liner is used as an etch stop for the first RIE step.
- the contact opening is extended through the contact liner to expose the silicide without exposing the substrate (Step 512 ).
- the extension is preferably performed by a second RIE selective to the second spacer and the silicide. Since the first spacer is covered by the second spacer, the first spacer is not etched through to expose the semiconductor substrate when extending the opening. Therefore, a short between a contact and the semiconductor substrate is prevented.
Abstract
Disclosed is a method of fabricating a field effect transistor. In the method, a gate stack on a top surface of a semiconductor substrate is formed, and then a first spacer is formed on a sidewall of the gate stack. Next, a silicide self-aligned to the first spacer is deposited in/or on the semiconductor substrate. Subsequently a second spacer covering the surface of the first spacer, and a contact liner over at least the gate stack, the second spacer and the silicide, are formed. Then an interlayer dielectric over the contact liner is deposited. Next, a metal contact opening is formed to expose the contact liner over the silicide. Finally, the opening is extended through the contact liner to expose the silicide without exposing the substrate.
Description
- This Patent application is a Continuation patent application of U.S. patent application Ser. No. 11/328,609 filed on Jan. 10, 2006, which is a Divisional patent application of U.S. patent application Ser. No. 10/904,330 filed on Nov. 4, 2004, now U.S. Pat. No. 7,217,647.
- The present invention relates to the fabrication of semiconductor integrated circuits, and more specifically to a structure and method of making a semiconductor integrated circuit which is tolerant of mis-alignment of the metal contact pattern to the gate pattern.
- In a semiconductor integrated circuit, a metal contact such as tungsten is used to connect the transistor gate, source/drain, and body to backend wiring. A conventional method for forming a metal contact will be briefly explained.
-
FIGS. 10 and 11 illustrate stages in conventional fabrication of a semiconductor integrated circuit. - Referring to
FIG. 10 , a conventional method of forming a metal contact in a semiconductor integrated circuit includes a step of forming agate stack 950 of a positive field effect transistor (PFET) 901 and agate stack 960 of a negative field effect transistor (NFET) 903, on asubstrate 900 which includes asilicon substrate 902, a buried oxide (BOX)layer 904 and asemiconductor layer 906. Thenoxide spacers gate stacks extensions semiconductor layer 906. Next,nitride spacers oxide spacers D regions nitride side walls metal silicide regions D regions contact liner 988, commonly Si3N4, is deposited over thesubstrate 900, followed by deposition of an interlayer dielectric layer (IDL) 990 and planerization. Thereafter, photolithographic and etching techniques are used to pattern theIDL 990, formingcontact openings FIG. 11 . The process typically proceeds by a first anisotropic etch process to form openings in the interlayer dielectric 990 stopping on thecontact liner 988, followed by a second anisotropic etch through thecontact liner 988, using thesilicide - In the photolithography, the pattern for the contact openings is inevitably slightly mis-aligned to the gate pattern. Thus, at least a portion of a contact opening may be mis-aligned over the
side walls contact liner 988, typically nitride, has no selectivity to thespacer spacers 974, 978 may be etched through, exposing theunderlying semiconductor layer 906. Since thesilicide D regions side walls spacers semiconductor layer 906. Accordingly, the exposed portion of the substrate may be etched, causing problems such as a short 993, 997 between a metal contact and the substrate, and causing unexpected parasitic capacitance. - Further occasionally the
semiconductor layer 906 is exposed between the bottom of thespacers edges silicide spacers silicide - Accordingly, there is a need for a structure and method of forming a metal contact that is tolerant of misalignment of the contact pattern to the gate pattern and avoids shorts between the contact and substrate.
- According to an aspect of the invention, a method of fabricating a field effect transistor is provided. The method includes steps of forming a gate stack on a top surface of a semiconductor substrate and a first spacer formed on a sidewall of the gate stack; forming, in or on the semiconductor substrate, a silicide adjacent to the first spacer; forming a second spacer covering the surface of the first spacer; forming a contact liner over at least the gate stack, the second spacer and the silicide; forming an interlayer dielectric over the contact liner; forming an opening to expose the contact liner over the silicide; and extending the opening through the contact liner to expose the silicide without exposing the substrate.
- In another aspect of the invention, the second spacer further covers at least a portion of the silicide so that the semiconductor layer is not exposed even if a gap between the second spacer and the silicide exists.
- These, and other aspects of the present invention will be better appreciated and understood when considered in conjunction with the following description and the accompanying drawings, which are not necessarily drawn to scale.
-
FIGS. 1 through 7 illustrate stages in fabrication of a PFET and an NFET according to an embodiment of the invention. -
FIG. 8 illustrates a stage in fabrication of a PFET and an NFET according to another embodiment of the invention. -
FIG. 9 shows a flow of method for fabricating a semiconductor circuit according to an embodiment of the invention. -
FIGS. 10 and 11 illustrate conventional stages in fabrication of a PFET and an NFET. -
FIGS. 1 through 7 illustrate stages in processing to form aPFET 101 and an NFET 103 according to an embodiment of the invention. - Firstly, as shown in
FIG. 1 , aPFET 101 and an NFET 103 are formed on asubstrate 100. Thesubstrate 100 preferably includes asilicon substrate 102, buried oxide (BOX)layer 104, asemiconductor layer 106 and atrench isolation region 140. Alternatively, thesubstrate 100 may be a bulk semiconductor substrate such as silicon. However, the invention is not limited to silicon substrates but other types of semiconductors such as III-V compound semiconductor materials, e.g. gallium arsenide (GaAs), may be used. - The PFET 101 and NFET 103 include
gate stacks channel regions source drain extensions D regions dielectric layers 152, 162 on thechannel regions gate conductor portions lower resistance portions - Adjacent the side walls of the gate stacks 150, 160,
multiple spacers gate stack spacers spacers silicide D regions - The S/
D regions - The
silicide - For example, using CVD, layers of silicide are formed on the S/
D regions spacers semiconductor layer 106 is not exposed. - Alternatively, the silicide may be formed by metal sputtering which preferably includes the steps of (1) sputtering metal into the S/
D regions spacers spacers silicide spacers semiconductor layer 106 is not exposed. - However, in both methods, a gap between the
silicide corresponding spacers semiconductor layer 106 may exposed between the bottom portion of thespacers edges silicide - Next, as shown in
FIG. 2 , anotherdielectric layer 149, is formed over the top surface of thesubstrate 100. Thedielectric material 149 is different than themask spacers mask spacers dielectric layer 149 is preferably oxide. In the case of an oxide, the formation of thelayer 149 preferably includes (1) applying a precursor, such as tetra ethyl ortho silicate (TEOS), SiH4, SiCl2H2, over thesubstrate 100, and (2) applying heat to grow theoxide layer 149. - Heat in step (2) is preferably applied at a temperature so as not to oxidize the
silicide oxide layer 149 is preferably be grown at a temperature in the range about 300° C. to 400° C. The preferable temperature is about 700° C. or less when the silicide includes Co. The thickness of theoxide layer 149 is preferably about 100 Å to 400 Å, most preferably about 160 Å to 200 Å. - The thickness of the
oxide layer 149 is preferably thinner than thenitride spacers edges silicide edges nitride spacers - Accordingly, the
spacers silicide oxide layer 149. - Instead of an oxide layer, a
layer 149 including silicon carbide (SiC) may be deposited. Thelayer 149 may be formed by SiH4 and CH4 reaction in a CVD chamber. Preferable reaction temperature is about 400° C. Thickness of the formedSiC layer 149 is preferably about 500 to 1000 Å. - Next, as shown in
FIG. 3 , theoxide layer 149 is etched back by an anisotropic etch, preferably reactive ion etching (RIE), to formspacers spacers spacers spacers silicide portions silicide spacers spacers spacers semiconductor layer 106 is not exposed. - Thereafter, as shown in
FIG. 4 , acontact liner 188 is applied over thesubstrate 100. The contact liner preferably is a different material than thespacers contact liner 188 is preferably about 300 to 1500 Å. - Then, an interlayer dielectric (ILD) 190, which may include a low-k dielectric material, a dielectric such as borophosphosilicate glass (BPSG) or high density plasma (HDP) oxide, is deposited and planerized. The thickness of the
ILD 190 is preferably about 3000 to 5000 Å. - A two-step selective etch process is used to form the contact openings.
- As shown in
FIG. 5 , photolithographic and anisotropic etching techniques, such as RIE, is used to pattern theinterlayer dielectric 190, to formcontact openings contact liner 188. In the first step, the etching is preferably selective to thecontact liner 188 so that the etching is stopped on thecontact liner 188. One skilled in the art would be able to arrange conditions for the etching to achieve the desired selectivity. -
FIG. 5 shows an example where the contact opening pattern is mis-aligned to the gate pattern. Specifically, thecontact openings - Next, a second etch step uses process conditions where the etching is selective to the
spacers silicide contact liner 188 is etched back to thesurfaces FIG. 6 ,spacers substrate 100, specifically thesemiconductor layer 106, is not exposed at the bottom of thecontact openings - Finally, metal, such as Ti, TiN, W, is filled into the contact holes to form
contacts - The final structure is illustrated in
FIG. 7 . - According to the invention, the
contacts silicide semiconductor layer 106, in the case of mis-alignment. -
FIG. 8 illustrates aPFET 301 and anNFET 303 according to another embodiment of the invention. -
Spacers 374 adjacent thePFET 301 are preferably thicker thanspacers 384 adjacent theNFET 303. It is preferable to make the contact pitch constant for ease of connectivity with upper layers, and not too large to minimize the size of the resulting semiconductor integrated circuit. Therefore,PFET 301 tends to be more prone to mis-alignment of the metal contact to the gate pattern. - Therefore, significant improvement in yield can be achieved even if an
additional spacer 340, such as an oxide layer or a SiC layer, according to the present invention is deposited over only aPFET 301. - In the embodiment illustrated in
FIG. 8 , asecond spacer 340, preferably including silicon oxide or SiC, is formed only overspacers 374 on the side walls of a gate stack of thePFET 301. For example, on aPFET 301, thespacer 374 preferably has about 750 Å maximum thickness, and more preferably the thickness of thespacer 374 is about 100 to 300 Å. It would be readily understood by a skilled person that thespacer 340 may be formed by arranging the method as illustrated inFIGS. 1 through 7 to mask an NFET during the formation of thespacer 374 on agate stack 350 of thePFET 301. For instance, thegate stack 350 of thePFET 301, thegate stack 360 of theNFET 303,silicide spacers substrate 300. Then, acontact liner 388, such as silicon nitride, may be formed to first cover only theNFET 303, while masking the PFET region. The mask is removed from the PFET region. Next, the NFET region is masked and theouter spacer 340 may be formed only on thespacer 374 adjacent the PFET by means of RIE, for example, followed by a formation of acontact liner 388 only on thePFET 301. - Subsequently, the mask over the NFET is removed, and the ILD and contact openings are formed as in
FIGS. 4-7 described above. -
FIG. 9 shows a flow of method for fabricating a semiconductor circuit according to an embodiment of the invention. - In the method, a gate stack on a top surface of a semiconductor substrate is formed, and then a first spacer is formed on a sidewall of the gate stack (Step 500).
- The first spacer may include multiple spacers, where the outer portion of the first spacer is preferably silicon nitride. Next, a silicide self-aligned to the first spacer is deposited in/or on the semiconductor substrate (Step 502).
- Subsequently a second spacer covering the surface of the first spacer (Step 504), and a contact liner formed over at least the gate stack, the second spacer and the silicide (Step 506). In accordance with the invention, the contact liner is a different material than the second spacer. For example, if the second spacer is silicon oxide, the contact liner is preferably silicon nitride. The contact liner is used as an etch stop layer in a subsequent first RIE, discussed below.
- Then an interlayer dielectric, such as a low-k material, BPSG or HDP oxide, over the contact liner is deposited (Step 508). The ILD is preferably different than the contact liner.
- Next, a metal contact opening through the ILD is formed to expose the contact liner over the silicide (Step 510). A first RIE of the ILD selective to the contact liner is preferably used. Here, the contact liner is used as an etch stop for the first RIE step. Finally, the contact opening is extended through the contact liner to expose the silicide without exposing the substrate (Step 512). The extension is preferably performed by a second RIE selective to the second spacer and the silicide. Since the first spacer is covered by the second spacer, the first spacer is not etched through to expose the semiconductor substrate when extending the opening. Therefore, a short between a contact and the semiconductor substrate is prevented.
- While the invention has been described with reference to certain preferred embodiments thereof, those skilled in the art will understand the many modifications and enhancements which can be made without departing from the true scope and spirit of the invention, which is limited only by the appended claims.
Claims (8)
1. An integrated circuit comprising;
a PFET and an NFET formed on a semiconductor substrate;
the PFET comprising:
a PFET gate stack on a top surface of the semiconductor substrate;
a first PFET spacer formed on a sidewall of the PFET gate stack, said first PFET spacer having an outer edge opposite from said sidewall of said PFET gate stack;
a PFET source/drain region having an edge aligned to said outer edge of said first PFET spacer;
a second PFET spacer covering a surface of said first PFET spacer and said second PFET spacer having an outer edge opposite from said surface of said first PFET spacer; and
a PFET silicide, in or on the semiconductor substrate, having an edge aligned to said outer edge of said second PFET spacer;
the NFET comprising:
an NFET gate stack on a top surface of the semiconductor substrate;
a first NFET spacer formed on a sidewall of the NFET gate stack, said first NFET spacer having an outer edge opposite from said sidewall of said NFET gate stack;
a NFET source/drain region having an edge aligned to said outer edge of said first NFET spacer;
a second NFET spacer covering a surface of said first NFET spacer and said second NFET spacer having an outer edge opposite from said surface of said first NFET spacer; and
a NFET silicide, in or on the semiconductor substrate, having an edge aligned to said outer edge of said second NFET spacer;
wherein said second PFET spacer has a thickness greater than a corresponding thickness of said second NFET spacer.
2. The integrated circuit of claim 1 , wherein said PFET further comprises a third PFET spacer covering the surface of said second PFET spacer and at least the edge of the PFET silicide aligned to said outer edge of said second PFET spacer so that the semiconductor substrate is not exposed between the second PFET spacer and the PFET silicide.
3. The integrated circuit of claim 2 , further comprising a contact liner formed over said PFET and said NFET, said contact liner in contact with said third PFET spacer, said PFET silicide, said second NFET spacer and said NFET silicide.
4. The integrated circuit of claim 3 , further comprising an interlayer dielectric formed in contact with an upper surface of said contact liner.
5. The integrated circuit of claim 4 , wherein said interlayer dielectric consists of a material that may be etched selectively to said contact liner, and said contact liner consists of a material that may be etched selectively to said third PFET spacer.
6. The integrated circuit of claim 4 , further comprising a PFET contact extending through said interlayer dielectric and said contact liner and in contact with said third PFET spacer and with said PFET silicide without being in contact with said semiconductor substrate.
7. The integrated circuit of claim 6 , further comprising an NFET contact extending through said interlayer dielectric and said contact liner and in contact with said NFET silicide without being in contact with said second NFET spacer or with said semiconductor substrate.
8. The integrated circuit of claim 7 , wherein said PFET and NFET contacts comprise a plurality of contacts having a constant pitch.
Priority Applications (1)
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US12/121,041 US20080246093A1 (en) | 2004-11-04 | 2008-05-15 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
Applications Claiming Priority (3)
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US10/904,330 US7217647B2 (en) | 2004-11-04 | 2004-11-04 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
US11/328,609 US20060118829A1 (en) | 2004-11-04 | 2006-01-10 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
US12/121,041 US20080246093A1 (en) | 2004-11-04 | 2008-05-15 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
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US11/328,609 Continuation US20060118829A1 (en) | 2004-11-04 | 2006-01-10 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
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US10/904,330 Expired - Fee Related US7217647B2 (en) | 2004-11-04 | 2004-11-04 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
US11/328,609 Abandoned US20060118829A1 (en) | 2004-11-04 | 2006-01-10 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
US12/121,041 Abandoned US20080246093A1 (en) | 2004-11-04 | 2008-05-15 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
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US10/904,330 Expired - Fee Related US7217647B2 (en) | 2004-11-04 | 2004-11-04 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
US11/328,609 Abandoned US20060118829A1 (en) | 2004-11-04 | 2006-01-10 | Structure and method of making a semiconductor integrated circuit tolerant of mis-alignment of a metal contact pattern |
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US9202758B1 (en) * | 2005-04-19 | 2015-12-01 | Globalfoundries Inc. | Method for manufacturing a contact for a semiconductor component and related structure |
US20060267106A1 (en) * | 2005-05-26 | 2006-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Novel semiconductor device with improved channel strain effect |
US20070202677A1 (en) * | 2006-02-27 | 2007-08-30 | Micron Technology, Inc. | Contact formation |
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US7745298B2 (en) * | 2007-11-30 | 2010-06-29 | Freescale Semiconductor, Inc. | Method of forming a via |
KR101376260B1 (en) * | 2008-04-14 | 2014-03-20 | 삼성전자 주식회사 | Semiconductor device and method for fabricating the same |
US8017027B2 (en) * | 2008-09-02 | 2011-09-13 | Hejian Technology (Suzhou) Co., Ltd. | Semiconductor fabricating process |
CN102074479B (en) * | 2009-11-24 | 2012-08-29 | 中国科学院微电子研究所 | Semiconductor device and production method thereof |
CN101840920B (en) * | 2009-12-15 | 2012-05-09 | 中国科学院微电子研究所 | Semiconductor structure and forming method thereof |
TWI609457B (en) * | 2014-09-30 | 2017-12-21 | 聯華電子股份有限公司 | Method of forming contact hole and semiconductor structure with contact plug |
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Also Published As
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US7217647B2 (en) | 2007-05-15 |
US20060099729A1 (en) | 2006-05-11 |
US20060118829A1 (en) | 2006-06-08 |
CN1779930A (en) | 2006-05-31 |
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