US20080293188A1 - Reactive solder material - Google Patents
Reactive solder material Download PDFInfo
- Publication number
- US20080293188A1 US20080293188A1 US12/220,218 US22021808A US2008293188A1 US 20080293188 A1 US20080293188 A1 US 20080293188A1 US 22021808 A US22021808 A US 22021808A US 2008293188 A1 US2008293188 A1 US 2008293188A1
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- Prior art keywords
- solder material
- reactive
- die
- reactive solder
- thermal management
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- Engineering & Computer Science (AREA)
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Reactive solder material. The reactive solder material may be soldered to semiconductor surfaces such as the backside of a die or wafer. The reactive solder material includes a base solder material alloyed with an active element material. The reactive solder material may also be applied to a portion of a thermal management device. The reactive solder material may be useful as a thermally conductive interface between a semiconductor surface and a thermal management device.
Description
- This is a Divisional Application of Ser. No. 10/141,735 filed May 9, 2002, which is presently pending.
- Embodiments described relate to the attachment of devices to a semiconductor die. In particular, embodiments described here relate to thermal management device attachment to a semiconductor die with a solder material.
- In the fabrication of microchips or dice, semiconductor wafers are processed and sliced into individual dice. The dice may then be used in a wide variety of devices. For example, a die may be used in an electronic device by being electronically coupled to a printed circuit board (PCB) of the device. However, prior to such an electronic coupling a thermal management device such as an integrated heat spreader (IHS) is often attached to a surface of the die. The IHS may help ensure that any heat within the die is adequately dissipated to prevent damage to the die during operation.
- In order to attach a thermal management device to a die, an adhesive is placed at a surface of the die and the device placed atop the adhesive. Adhesives may be of conventional polymers, such as siloxane-based polymers, or other conventional thermally conductive adhesive material.
- The ability of an IHS to dissipate heat from the die is dependent in part upon the IHS material selected. Highly efficient heat dissipating materials such as aluminum and copper may be employed. However, the ability of the IHS to dissipate heat from the die is also dependent upon the adhesive which secures the IHS to the die. That is, heat transfer from the die to the IHS is limited by the conductivity of the adhesive between the IHS and the die. Therefore, for example, even where an IHS of a highly efficient heat dissipating material is employed, the effectiveness of the IHS will nevertheless be substantially compromised where the adhesive is of a relatively low conductivity.
- In order to more effectively transfer heat, solder materials may be used as a thermal interface. Solder materials, such as indium, are of generally higher conductivity than conventional polymer adhesives. However, solder materials require a metallized surface, flux, and other processing for complete curing and bonding to an otherwise silicon-based non-metal surface. Metallization incurs additional processing time and equipment. Additionally, a conventional solder, such as indium will require the addition of a flux material to clean soldering surface and encourage solder flow. The flux may be delivered by a syringe of yet another piece of equipment. Flux delivery also incurs additional processing time and is required for bonding of conventional solder material to the metallized surface. Solder material is then dispensed above the flux before the heat management device is placed.
- While conventional solder materials display better conductivity, they also require a longer and less efficient process than processes already available for use of conventional polymer adhesives. Additional equipment cost and expense associated with reduced throughput is also incurred.
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FIG. 1 is a side cross-sectional view of a semiconductor package with a solder preform placed thereon. -
FIG. 2 is a perspective view of the semiconductor package ofFIG. 1 including a reactive solder material layer. -
FIG. 3 is a side cross-sectional view of the semiconductor package ofFIG. 2 to accommodate an IHS placed by a pick and place device. -
FIG. 4 is a side cross-sectional view of the semiconductor package ofFIG. 3 in a reflow apparatus. -
FIG. 5 is a perspective view of the semiconductor package ofFIG. 4 following reflow. -
FIG. 6 is a flow chart summarizing certain embodiments of securing a thermal management device to a semiconductor surface. - Descriptions of reactive solder materials and semiconductor package embodiments follow. Packaging methods incorporating reactive solder material embodiments are disclosed. Aspects of embodiments are described and illustrated by the accompanying drawings.
- While embodiments are described with reference to particular die and certain packages, the embodiments are applicable to any process for securing a thermal management device to a semiconductor surface such as the surface of a die or wafer. Embodiments can be particularly useful when a thermal management device in the form of an IHS is to be secured to the backside of a packaged die. Embodiments include a method of applying a reactive solder material to a surface of a die and bonding thereto by reflow.
- Referring now to
FIG. 1 , asemiconductor package 140 is shown accommodating apreform 195 includes a portion that isreactive solder material 100 delivered to a semiconductor surface of thesemiconductor package 140. In alternate embodiments,reactive solder material 100 may be delivered in alternate manners. For example, solder ribbon or other conventional solder delivery mechanisms may be employed. -
FIG. 6 depicts a flow-chart summarizing certain embodiments described herein, where a thermal management device is secured to a semiconductor surface by way of a reactive solder material 100 (seeFIG. 1 ).FIG. 6 is referenced throughout the following description as an aid in describing these embodiments. - Continuing with reference to
FIG. 1 , with additional reference toFIG. 6 , thereactive solder material 100 is initially formed by mixing into a liquid form of a base solder material, anactive element material 610. An active element material is a material that may combine with a base solder material without significantly impacting the melting point of the reactive solder material while also having the ability to bond directly to a silicon based material or surface. Active element materials may include rare earth, transition, and other elements as described further herein. Thereactive solder material 100 is incorporated into a solder preform 195 (620) aligned with a semiconductor surface which is asurface 162 of adie 160. Delivery of the solder preform 195 in this manner may be accomplished with a conventional pick and place mechanism. - In embodiments described, a semiconductor surface is the backside surface of a
die 160 as shown inFIG. 1 or an entire wafer backside surface. However it is not required that the semiconductor surface be a backside surface or that the die 160 be of asemiconductor package 140. Additionally, as described further herein, and with reference toFIG. 6 , embodiments of thereactive solder material 100 may be delivered to asurface 162 of a die 160 (see also 640), awafer surface 650, or athermal management device 660. Additionally, the reactive solder material may be delivered to other silicon based or oxide surfaces for bonding as described further herein. - As described further herein, the
reactive solder material 100 is to act as an adhesive with high conductivity. Additionally, thereactive solder material 100 includes properties that allow for the securing of a thermal management device to the die 160 in an efficient manner without sacrifice of advantages afforded by the high conductivity of thereactive solder material 100. - In the embodiment shown, the die 160 is of a monocrystalline silicon to act as a platform for an arrangement of transistors and capacitors including metal lines for electrical coupling separated by inter-layer dielectric material. Additionally, as shown, an
electrical contact surface 169 of the die 160 includes electricallyconductive bumps 165 coupled to the inner circuitry of the die 160. In one embodiment, the electrically conductive bumps are of a tin lead solder. However, in other embodiments lead free solder and other conventional materials are used. In the embodiment shown, the die 160 also includes asurface 162 that is not metallized. As described further herein, metallization of thissurface 162 is not required for bonding ofreactive solder material 100. - In the embodiment shown in
FIG. 1 , thesemiconductor package 140 is formed by placement of the die 160 above thepackage substrate 170, for example, by a conventional pick and place mechanism. Thedie 160 is placed such that the electricallyconductive bumps 165 are in contact with electricallyconductive pads 175 of thepackage substrate 170. Thesemiconductor package 140 is then heated in a conventional oven to melt the electricallyconductive bumps 165 about the electricallyconductive pads 175. For example, in embodiments where the electricallyconductive bumps 165 are of a tin lead, lead free, or other conventional solder, thesemiconductor package 140 is heated to between about 180° C. and about 225° C. Once secure electrical contact between the electricallyconductive bumps 165 and the electricallyconductive pads 175 occurs, thesemiconductor package 140 is cooled to allow the electricallyconductive bumps 165 to solidify and permanently affix to the electricallyconductive pads 175. - The
semiconductor package 140 is then placed in an underfill delivery device where a syringe is used to deliver anunderfill material 167 filling the space between the die 160 and thepackage substrate 170. Thesemiconductor package 140 is then placed in a reflow apparatus for heating and curing of theunderfill material 167. In one embodiment, theunderfill material 167 is of a polymer adhesive, such as a conventional epoxy which is heated to between about 125° C. and about 225° C. by the reflow apparatus for curing. - As shown in the embodiment of
FIG. 1 , thepackage substrate 170 includesconductive pins 178 which are electrically coupled to the electricallyconductive bond pads 175. This allows access to the circuitry of thedie 160 by any devices coupled to thesemiconductor package 140 through the conductive pins 178. In other embodiments a ball grid array or other conductive mechanism may be used in place of theconductive pins 178 andbond pads 175 for electrical coupling. - A
sealant 190 may be delivered about the perimeter of the die 160 at the surface of thepackage substrate 170. Thesealant 190 may be a conventional epoxy polymer delivered with use of a syringe followed by curing similar to the underfill as described above and further herein. - Continuing with reference to
FIG. 1 , including thereactive solder material 100, asolder preform 195 may be placed as shown, above thesurface 162 of thedie 160 by a conventional pick and place mechanism. Thesolder preform 195 is positioned such that thereactive solder material 100 is at thesurface 162 of thedie 160. In an alternate embodiment, a heated molten form of thereactive solder material 100 is delivered tot eh surface 162 of thedie 160. Additionally, in the embodiment shown, thesealant 190 may help secure an integrated heat spreader (IHS) 300 (seeFIG. 3 ) during reflow as described below. - As noted above, embodiments of the
reactive solder material 100 include properties that allow for soldering in a highly efficient manner. In particular, as described below, thereactive solder material 100 melts and solidifies without pre-flux cleaning and does not require a metal surface for sufficient bonding. Therefore, the expense of metallization is avoided. Additionally, since no flux is needed for soldering, the likelihood of forming trapped flux or voids, which could decrease conductivity, is minimized. - As described above, embodiments of
reactive solder material 100 include a base solder alloyed with an active element material. Base solders may include indium, tin silver, and other conventional thermal conductive solder types. Active element materials may include rare earth elements such as hafnium, cerium, titanium and lutetium, transition elements such as nickel, copper, iron, and cobalt, and other elements such as magnesium, strontium and cadmium. Alloyed into the base solder is less than about 10% of an active element material, preferably less than about 2%. In this manner, the active element material does not significantly affect or increase a solidus temperature of thereactive solder material 100. Additionally, a liquidus temperature of thereactive solder material 100 will not exceed about 300° C. - By including an active element material in the
reactive solder material 100 as described above, thereactive solder material 100 becomes naturally reactive with materials at thesurface 162 of the silicon die 160 such as silicon, silicon oxide or silicon nitride. As described further herein, this provides a unique bond of solder to the die 160 following reflow that is not disturbed or compromised in conductivity by the addition of flux. - Referring to
FIGS. 1 and 2 , a layer ofreactive solder material 100 is delivered to thesurface 162 of thedie 160. The remainder of thesolder preform 195 and any excessreactive solder material 100 thereon is removed, leaving behind the layer ofreactive solder material 100. - Referring to
FIG. 3 , a side cross-sectional view of thesemiconductor package 140 taken from section lines 3-3 ofFIG. 2 is shown. With additional reference to 675 ofFIG. 6 , anarm 375 of a pick and place device aligns and delivers a thermal management device, such as anIHS 300 to thesemiconductor package 140. TheIHS 300 may help ensure that any heat within thedie 160 is adequately dissipated to prevent damage to thedie 160 during its operation. - Embodiments of thermal management devices such as the
IHS 300 may be of copper, diamond, silicon carbide, aluminum nitride, or other conventional heat management material with abonding surface 350 to bond to thereactive solder material 100. Thebonding surface 350 may be of a nickel gold, or other metal material. In an embodiment where theIHS 300 is of a material reactive with thereactive solder material 100, such as a metal, thebonding surface 350 need not be metalized, for example, with gold for sufficient bonding to thereactive solder material 100. - In the embodiment shown, the thermal management device is an
IHS 300. However, other thermal management devices such as heat sinks or other features may be coupled to the die 160 or one another as described above, through thereactive solder material 100 interface. - As shown in
FIG. 3 , thebonding surface 350 of theIHS 300 is placed above thesurface 162 of the die 160 with the layer ofreactive solder material 100 serving as an interface therebetween. Additionally, portions of thebonding surface 350 extending beyond the width of the die 160 contact thesealant 190 adjacent thedie 160 as theIHS 300 is placed by thearm 375. However, it is not required that these portions of thebonding surface 350 be coated with solderable metals as indicated. - Referring to
FIG. 4 , an embodiment of thesemiconductor package 140 including theIHS 300 is secured byclips 450. Theclips 450 force theIHS 300 and the remainder of thesemiconductor package 140 together. In the embodiment shown, the pressure applied by the clips is between about 5 lbs. and about 16 lbs. However, the exact pressure applied by theclips 450 may be dependent upon factors such as the makeup of thereactive solder material 100 and is a matter of design choice. - With reference to
FIG. 6 , reflow is used to solder thereactive solder material 100 and bond a device to asemiconductor surface 690. With particular reference toFIG. 4 , this is seen where the clippedsemiconductor package 140 is placed within areflow apparatus 400 and advanced along abelt 425. Thereflow apparatus 400 may be a conventional semiconductor processing oven. Theheating elements 475 may include heated coils, a radio frequency source, or other source of radiation. - As the
semiconductor package 140 is advanced theheating elements 475 melt thereactive solder material 100 to bond the die 160 to theIHS 300. Theheating elements 475 heat thereactive solder material 100 up to the melting point of the base solder. For example, in an embodiment where the base solder is indium, theheating elements 475 heat thereactive solder material 100 up to at least 156° C., preferably below 200° C. Depending upon the base solder utilized, thereactive solder material 100 may be heated up to about 300° C. to ensure reliable bonding. The right reactive elements will not change bonding temperature significantly. - During reflow, as described above, active elements within the
reactive solder material 100 dissolve and migrate to thesilicon surface 162 of thedie 160 boding thereto. At the same time, the base solder bonds directly to theIHS 300. It is not necessary that thesurface 162 be metalized prior to soldering. The solder joint formed by thereactive solder material 100 will display a bond strength of between about 1,000 psi and about 2,000 psi. - Referring to
FIG. 5 , a perspective view of thesemiconductor package 140 is shown. Thesemiconductor package 140 is shown removed from thereflow apparatus 400 andclips 450 ofFIG. 4 . TheIHS 300 is secured and shown in contact with thesealant 190 about its perimeter. Thesealant 190 may be a conventional polymer and may cure when heated to between about 100° C. and about 150° C. For example, in an embodiment where the base solder is indium and reflow is used to heat up thereactive solder material 100 to about 156° C., thesealant 190 is cured during the reflow. In an alternate embodiment thesealant 190 is not present. Rather, additionalreactive solder material 100 is provided to seal about the perimeter of thedie 160 and be soldered during reflow as described above. - The
semiconductor package 140 shown inFIG. 5 is ready for connection to a printed circuit board of an electronic device. Due to the conductivity displayed by the cured reactive solder material 100 (seeFIG. 4 ), heat generated throughout thedie 160 during operation of the electronic device is dissipated by theIHS 300. Thesemiconductor package 140 shown is formed by processes having a degree of efficiency heretofore unseen. - In embodiments described above, the
reactive solder material 100 is delivered to anindividual die 160. However, in other embodiments, thereactive solder material 100 is delivered to the surface of an entire wafer made up of a plurality of dice as seen at 650 ofFIG. 6 . Thereactive solder material 100 may be delivered to the wafer by a larger patterned preform. - Referring to
FIG. 6 , in one embodiment the wafer is then placed in a sawing apparatus, and sawed intoindividual dice 655. The dice are then packaged having a layer of reactive solder material to secure a thermal management device to each die surface as described further herein. Alternatively, in another embodiment, devices are secured to the entire wafer with the reactive solder material by soldering and reflow as described above, prior to sawing. - In still other embodiments, the
reactive solder material 100 ofFIG. 1 may be applied in alternative manners and during alternate stages of packaging. For example, with additional reference toFIG. 6 , thereactive solder material 100 may be introduced to a semiconductor surface by initially applying thereactive solder material 100 to a thermal management device with anappropriate solder preform 660 secured to thesemiconductor surface 690. Additionally, in another embodiment where thermal management devices are secured to one another and to thedie 160, thereactive solder material 100 may be used as an adhesive thermal interface between the thermal management devices. For example, with added reference toFIG. 3 , where anIHS 300 is secured to the die 160 and also accommodates a heat sink, the heat sink may be secured to theIHS 300 withreactive solder material 100 according to processes described above. - Referring to
FIG. 6 , the flow-chart summarizing certain embodiments described above is shown. With reference to the above description,FIG. 6 summarizes embodiments of securing a thermal management device to a semiconductor surface with a reactive solder material from forming to soldering and solidifying of the reactive solder material. - Reactive solder material embodiments described above bond to the natural silicon based surface of a semiconductor wafer or die. Efficiency of processing is greatly enhanced where no time or materials are required for metallization or addition of flux when curing a solder material to a semiconductor wafer or die.
- Embodiments described above include various reactive solder material types. Additionally, methods of application and semiconductor packaging are described. Although exemplary embodiments describe particular reactive solder material types and properties, additional embodiments are possible. For example, reactive solder material types may be employed displaying a variety of conductivity, melting point, and other characteristics to choose from for semiconductor manufacturing. Additionally, many changes, modifications, and substitutions may be made without departing from the spirit and scope of these embodiments.
Claims (7)
1. A method comprising:
applying a reactive solder material to a semiconductor surface; and
soldering the reactive solder material to secure a thermal management device to the semiconductor surface in a fluxless manner.
2. The method of claim 1 wherein said soldering includes heating the reactive solder material to at least about a melting point of a base solder of the reactive solder material.
3. The method of claim 2 wherein the base solder is indium.
4. The method of claim 2 wherein the semiconductor surface is of a wafer surface, said method further comprising sawing the wafer into individual dice.
5. A method comprising:
applying a reactive solder material to a portion of a thermal management device; and
soldering the reactive solder material in a fluxless manner.
6. The method of claim 5 wherein said soldering is to secure a semiconductor surface to the thermal management device with the reactive solder material.
7. The method of claim 5 wherein the thermal management device is a first thermal management device, said soldering to secure the first thermal management device to a second thermal management device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US12/220,218 US20080293188A1 (en) | 2002-05-09 | 2008-07-22 | Reactive solder material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/141,735 US7436058B2 (en) | 2002-05-09 | 2002-05-09 | Reactive solder material |
US12/220,218 US20080293188A1 (en) | 2002-05-09 | 2008-07-22 | Reactive solder material |
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US10/141,735 Division US7436058B2 (en) | 2002-05-09 | 2002-05-09 | Reactive solder material |
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CN (1) | CN100492622C (en) |
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Also Published As
Publication number | Publication date |
---|---|
US7436058B2 (en) | 2008-10-14 |
AU2003226278A1 (en) | 2003-11-11 |
AU2003226278A8 (en) | 2003-11-11 |
MY166632A (en) | 2018-07-17 |
CN100492622C (en) | 2009-05-27 |
WO2003096416A3 (en) | 2004-06-03 |
US20030209801A1 (en) | 2003-11-13 |
WO2003096416A2 (en) | 2003-11-20 |
CN1666334A (en) | 2005-09-07 |
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