US20080296261A1 - Apparatus and methods for improving treatment uniformity in a plasma process - Google Patents
Apparatus and methods for improving treatment uniformity in a plasma process Download PDFInfo
- Publication number
- US20080296261A1 US20080296261A1 US12/125,335 US12533508A US2008296261A1 US 20080296261 A1 US20080296261 A1 US 20080296261A1 US 12533508 A US12533508 A US 12533508A US 2008296261 A1 US2008296261 A1 US 2008296261A1
- Authority
- US
- United States
- Prior art keywords
- workpiece
- plasma
- sacrificial body
- peripheral edge
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Abstract
Apparatus and methods for improving treatment uniformity in a plasma process. The sacrificial body, which is extends about an outer peripheral edge of the workpiece during plasma processing, is composed of a plasma-removable material. The sacrificial body may include multiple sections that are arranged to define a circular geometrical shape. The sacrificial body functions to increase the effective outer diameter of the workpiece, which operates to alleviate detrimental edge effects intrinsic to plasma processing by effectively reducing the etch rate near the outer peripheral edge of the workpiece.
Description
- This application claims the benefit of U.S. Provisional Application No. 60/941,518, filed Jun. 1, 2007. The disclosure of this provisional application is hereby incorporated by reference herein in its entirety.
- The invention generally relates to apparatus and methods for processing workpieces with a plasma and, more particularly, to apparatus and methods for improving plasma treatment uniformity in a plasma processing system.
- Uniform plasma treatment for wafer level applications is a concern for the semiconductor manufacturing industry. One problem that plagues conventional etch processes and plasma processing equipment is non-uniformity in the etch rate across a workpiece, such as a wafer. Workpiece edge effects represent a common source of these etch rate non-uniformities. The uniformity of the etch rate can be determined from the quotient of a difference between the maximum and minimum lateral etch rate on the treated surface to the product of two times the average etch rate across the workpiece. Typically, the maximum etch rate occurs near the peripheral edge of the workpiece and the minimum etch rate is observed near the workpiece center.
- Conventional methods have been used in the effort to improve the uniformity of the etch rate across the surface area of the workpiece. For example, a magnetron may be employed to generate the plasma. However, such solutions significantly increase the cost of the plasma processing equipment.
- A cost-effective solution is desired that addresses workpiece edge effects that occur in conventional processing systems and that adversely impact the uniformity of the plasma treatment across the surface area of the workpiece, as well as other artifacts of the plasma treatment that have a negative influence on treatment uniformity.
- In one embodiment, an apparatus is provided for use in plasma processing a workpiece. The apparatus includes a sacrificial ring composed of a plasma-removable material. The sacrificial ring is adapted to be arranged about an outer peripheral edge of the workpiece so that an outer diameter of the workpiece is effectively increased.
- In another embodiment, an apparatus is provided for use in plasma processing a workpiece. The apparatus includes a vacuum enclosure configured to contain a plasma. The vacuum enclosure includes a support pedestal adapted to contact and support a second surface of the workpiece when processing a first surface of the workpiece with the plasma. The apparatus further includes a sacrificial ring composed of a plasma-removable material, the sacrificial ring extending about the outer peripheral edge of the workpiece supported on the pedestal so that an outer diameter of the workpiece is effectively increased.
- In yet another embodiment, a method is provided for plasma processing a workpiece having a first surface, a second surface, and an outer peripheral edge connecting the first and second surfaces. The method includes arranging a sacrificial ring composed of a plasma-removable material about the outer peripheral edge of the workpiece and exposing the first surface of the workpiece and the sacrificial ring to a plasma. The method further includes shifting a maximum etch rate from a location on the first surface of the workpiece to a different location on the sacrificial ring.
- The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with a general description of the invention given above, and the detailed description given below, serve to explain the principles of the embodiments of the invention.
-
FIG. 1 is a perspective view of a plasma processing system including a vacuum enclosure and a wafer lift mechanism disposed inside the vacuum enclosure. -
FIG. 2 is a front view of the plasma processing system ofFIG. 1 . -
FIG. 3 is an exploded view of the enclosure and wafer lift mechanism of the plasma processing system ofFIGS. 1 and 2 . -
FIG. 3A is another exploded view of the workpiece vertical lift mechanism of the plasma processing system ofFIGS. 1 , 2, and 3. -
FIG. 4 is a cross-sectional view taken generally along line 4-4 inFIG. 2 in which the wafer lift mechanism is placed in a raised position with the lid of the vacuum enclosure opened relative to the base of the vacuum enclosure. -
FIG. 5 is a cross-sectional view similar toFIG. 4 in which the lid of the vacuum enclosure is in contact with the base of the vacuum enclosure and the wafer lift mechanism is thereby placed in a lowered position. -
FIG. 6 is an enlarged view of a portion ofFIG. 4 . -
FIG. 7 is an exploded view of a portion of the wafer lift mechanism ofFIGS. 1-6 . -
FIG. 8A is a perspective view depicting the wafer lift mechanism in a raised condition in which only a portion of the wafer lift mechanism is illustrated for clarity of illustration. -
FIG. 8B is a perspective view similar toFIG. 8A depicting the wafer lift mechanism in a raised condition. - With reference to
FIGS. 1-4 , aplasma processing system 10 generally includes a vacuum vessel orenclosure 12 having alid 14 and abase 16 upon which thelid 14 rests, a pair ofsupport arms lid 14, anupper electrode 22, and alower electrode 24. Theprocessing system 10 further includes a separating member orring 26 positioned between the upper andlower electrodes lower electrodes electrodes - The
support arms lid 14 with a lifting device 28 (not shown) is capable of vertically lifting and lowering thelid 14 relative to thebase 16 between a raised position (FIG. 1 ) and a lowered position (FIG. 5 ). When thelid 14 andbase 16 are in a contacting relationship, aprocessing region 28 is defined as the space bounded vertically between the inwardly-facing horizontal surfaces of theelectrodes ring 26. In the raised position, theprocessing region 28 is accessible for insertingunprocessed workpieces 30 and removing processedworkpieces 30. In the lowered position (FIG. 5 ), an environment may be established in theprocessing region 28 that is suitable for plasma processing eachsuccessive workpiece 30 positioned in theprocessing region 28. Theupper electrode 22 moves along with thelid 14 when thelid 14 is moved by the lifting device between the raised and lowered positions relative to thebase 16. - A power supply 32 (
FIG. 2 ), which is coupled with theelectrodes transmission lines electrodes power supply 32 may be an alternating current power supply operating at an extremely low frequency, such as 50 Hz and 60 Hz, at a high radio frequency, such as 40 kHz and 13.56 MHz, at a medium radio frequency, such as 1 kHz, or at a microwave frequency, such as 2.4 GHz. Thepower supply 32 may also operate at dual frequencies superimposed upon one another. Alternatively, thepower supply 32 may be a direct current (DC) power supply in which the plasma is non-oscillating. In other alternative embodiments,power supply 32 may supply a radio frequency (RF) power component that provides dense plasma and a DC power component that independently increases ion energy without effecting the plasma density. - The
power supply 32 may be operated at one or more radio frequencies and include an impedance matching network (not shown) that measures reflected power from the load represented by theelectrodes power supply 32. The impendence matching network adjusts the frequency of operation ofpower supply 32 to minimize the reflected power. The construction of such matching networks is understood by a person of ordinary skill in the art. For example, the impedance matching network may tune the matching network by changing the capacitance of variable capacitors within the matching network to match the impedance of thepower supply 32 to the impedance of the load as the load changes. The power and voltage levels and operating frequency(ies) may vary of course, depending upon the particular application. - A
vacuum pump 36 continuously pumps byproduct generated by the plasma process and non-reacted source gas from theprocessing region 28, when theplasma processing system 10 is operating, through avacuum manifold 38. Thevacuum pump 36 is operative to maintain the total pressure in theprocessing region 28 at a sub-atmospheric level low enough to facilitate plasma creation. Typical pressures suitable for plasma formation range from about twenty (20) millitorr to greater than about fifty (50) torr. The pressure within theprocessing region 28 is controlled in accordance with a particular desired plasma process and primarily consists of partial pressure contributions from the source gas, which may comprise one or more individual gas species, supplied to the evacuatedprocessing region 28. - With continued reference to
FIGS. 1-4 , a sealingmember 40 is compressed between the separatingring 26 and theupper electrode 22. When thelid 14 is lowered into contact with the base 16 as shown inFIG. 5 , another sealingmember 42 is compressed between the separatingring 26 and a perimeter of thelower electrode 24. The sealingmembers lid 14 is in its lowered position, a conductingmember 43 is captured between the respective perimeters of thelid 14 andbase 16, which are metallic. The conductingmember 43 supplies a good electrical contact between thelid 14 andbase 16. - A gas inlet plate 44 (
FIG. 4 ) is fastened to an upper horizontal surface of theupper electrode 22. Thegas inlet plate 44 is coupled by agas port 46 and adelivery line 48 with asource gas supply 50. A mass flow controller and a flow measurement device (not shown) may be provided that cooperate to regulate the flow of each process gas from thesource gas supply 50 to thegas port 46. Thegas inlet plate 44 includes distribution passages (not shown) and theupper electrode 22 includes passages (not shown) coupled with the distribution passages of thegas inlet plate 44. The passages in theupper electrode 22 communicate with theprocessing region 28 for injecting process gas into the process chamber. - The
plasma processing system 10 includes a microprocessor-based controller 52 (FIG. 2 ) that is programmed to control the operation of, among other components, thepower supply 32, thevacuum pump 36, and thesource gas supply 50. For example, the controller regulates the power levels, voltages, currents and frequencies of thepower supply 32 and orchestrates the provision of source gas fromsource gas supply 50 and the pumping rate ofvacuum pump 36 to define a suitable pressure in processingregion 28 in accordance with the particular plasma process and application. - During processing of
workpiece 30, the power applied between theelectrodes power supply 32 produces an electromagnetic field in theprocessing region 28, which is defined between the twoelectrodes lid 14 andbase 16 are contacting and an environment suitable for plasma processing is present in the processing region. The electromagnetic field excites the atoms or molecules of source gas present in the processing region to a plasma state, which is sustained by the application of power frompower supply 32 for the duration of the plasma treatment. -
Transmission line 34, which is electrically coupled in a known manner with thelower electrode 24, is routed to thelower electrode 24.Transmission line 33 is electrically coupled in a known manner with one or both of theelectrodes air gaps 56 between theelectrodes enclosure 12 for cooling theprocessing system 10 and, in particular, for cooling theelectrodes FIG. 2 ) may be provided in thelid 14 to define a coolant port for coupling a coolant supply 55 (FIG. 2 ) with theseair gaps 56. - The
electrodes ring 26 is formed from a non-conducting dielectric material and is constructed to be able to withstand the plasma environment inside theprocessing region 28 without unduly contaminating the processedworkpiece 30. Generally, this implies that the material forming the separatingring 26 should be substantially resistant to etching by the plasma present in theprocessing region 28. The separatingring 26 defines a vertical sidewall of non-conductive material, in addition to providing the vacuum seal between theelectrodes - Constituent species from the plasma contact and interact with exposed material on the
workpiece 30 to perform the desired surface modification. The plasma is configured to perform the desired surface modification of theworkpiece 30 by selecting parameters such as the chemistry of the source gas, the pressure inside theprocessing region 28, and the amount of power and/or frequency applied to theelectrodes processing system 10 may include an end point recognition system (not shown) that automatically recognizes when a plasma process (e.g., an etching process) has reached a predetermined end point or, alternatively, plasma processes may be timed based upon an empirically-determined time of a process recipe. - With reference to
FIGS. 3 , 3A, 4, 5, and 6 in which like reference numerals refer to like features inFIGS. 1 and 2 , theplasma processing system 10 further includes avertical lift mechanism 58 located inside thevacuum enclosure 12. Thevertical lift mechanism 58 receives each workpiece 30 in a lifted condition relative to thelower electrode 24. Theworkpiece fixture 60 is automatically moveable in conjunction with opening and closing thelid 14 and without operator intervention between a raised position, when thelid 14 is opened, as best shown inFIG. 4 , and a lowered position when thelid 14 is in a closed position relative to thebase 16, as best shown inFIG. 5 . In other words, theworkpiece fixture 60 moves toward the lowered position as theupper electrode 22 is moved by thelid 14 toward thelower electrode 24 to seal theprocessing region 28 and moves toward the raised position as theupper electrode 22 is moved by thelid 14 away from thelower electrode 24. When thelid 14 is placed in the lowered position contacting the base 16 to seal theprocessing region 28 from the ambient environment, thevertical lift mechanism 58 automatically places theworkpiece 30 in a treatment position. - The
vertical lift mechanism 58 generally includes aworkpiece fixture 60, a set of resiliently-biasedsupports 62 mechanically coupling theworkpiece fixture 60 with thelower electrode 24, a set of resiliently-biasedpush devices 64 projecting from theupper electrode 22 toward thelower electrode 24 and theworkpiece fixture 60, alift plate 66, and aworkpiece ring 68. An outer peripheral edge orperimeter 65 of theworkpiece fixture 60, which is positioned between the upper andlower electrodes ring 26. - As best shown in
FIGS. 3 and 3A , thelift plate 66 andworkpiece ring 68 are joined, for example, by a pin-in-socket type engagement in which one of thelift plate 66 orworkpiece ring 68 carries a set of projecting pins (not shown) and the other of thelift plate 66 orworkpiece ring 68 carries a set of sockets (not shown) that register and mate with the pins. Acover plate 70, which is disposed on thelower electrode 24, includes acap 72 and asupport 74 that underlies thecap 72. Thecap 72 may also be joined with thesupport 74 by a pin-in-socket type engagement or, alternatively, thecap 72 andsupport 74 may constitute an integral, one-piece component. Thecover plate 70 has a good electrical contact with thelower electrode 24, as does theworkpiece ring 68 andlift plate 66, when thelid 14 is lowered. As a consequence, theworkpiece fixture 60, theworkpiece 30, and thelower electrode 24 are at approximately equivalent electrical potentials when theplasma processing system 10 is operating to generate plasma inside theprocessing region 28 and to processworkpieces 30 inside theprocessing region 28 with the plasma. - A
recess 76 is located near each of the corners of thelower electrode 24. Eachrecess 76 has a base 78 that represents a relatively thin wall of the material oflower electrode 24 remaining after therespective recess 76 is formed or machined in thelower electrode 24. Projecting from thebase 78 of each of therecesses 76 is a mountingpost 80 with an internally threadedopening 82. Each mountingpost 80 may be positioned to be substantially coaxial with the respective one of therecesses 76. In the assembly forming thesupport 62, a threadedtip 84 of aguide pin 86 is mated with the internally threadedopening 82 of each mountingpost 80. The internally threadedopening 82 of each mountingpost 80 is oriented such that therespective guide pin 86 projects in a direction toward thelift plate 66. - Each of the
recesses 76 is also bounded peripherally by a substantiallycylindrical sidewall 88 extending to thebase 78 and a beveled or flaredrim 90 disposed betweensidewall 88 and atop surface 92 of thelower electrode 24. The diameter of the flaredrim 90, which intersects thetop surface 92, is greater than the diameter of thesidewall 88 of eachrecess 76 and diverges with increasing diameter in a direction toward the top surface. - Each
guide pin 86 includes a substantially cylindrical,non-threaded shank 94 extending from the threadedtip 84 toward ahead 96. Thehead 96 may include a recessedfeature 98 that receives the tip of a tool (not shown) used to generate the mated engagement between the threadedtip 84 ofguide pin 86 and the internally-threadedopening 82. Thehead 96 of eachguide pin 86, which projects at least partially above the nearbytop surface 92 of thelower electrode 24, carries a flaredsurface 100 located near thenon-threaded shank 94. Thenon-threaded shank 94 of eachguide pin 86 and thesidewall 88 of therespective recess 76 have a substantially coaxial arrangement. - Each of the
supports 62 includes astop block 102 coupled by a respective one of the guide pins 86 with thelift plate 66 of theworkpiece fixture 60. Each stop block 102 includes abody 104 with anenlarged head 106 and a central bore orpassageway 108 extending the length of thebody 104. The radially outward projection ofenlarged head 106 relative to thebody 104 defines an edge orlip 110, which extends circumferentially about thebody 104. Theenlarged head 106 of each stop block 102 further includes a first beveled or taperedexterior sidewall 112 that decreases in diameter with increasing distance from thelip 110 and a second beveled or taperedexterior sidewall 114 that increases in diameter with increasing distance from thelip 110. Theexterior sidewall 114 is disposed between thelip 110 and the taperedexterior sidewall 112. Thepassageway 108 includes a substantiallycylindrical surface 116 and a beveled or taperedsurface 118 that narrows a portion of the substantiallycylindrical surface 116. - A flared
recess 120 is defined near each of the peripheral corners of thelift plate 66. The taperedexterior sidewall 112 of each stop block 102 is engaged with a respective one of the flared recesses 120. The depth of each flaredrecess 120 is selected such that a respectiveinclined surface 122 of the flaredrecess 120 and taperedexterior sidewall 112 of each stop block 102 are contacting when thelift plate 66 is secured with the stop blocks 102. The inclination angles of each flaredrecess 120 and the corresponding taperedexterior sidewall 112 of its stop block 102 are matched to assist in securing the stop blocks 102 with thelift plate 66, yet permit ready removability of thelift plate 66 by a vertical force of sufficient magnitude. - When mounted to the
lift plate 66, thetapered surface 118 ofpassageway 108 instop block 102 is located generally between one of therecesses 76 in thelower electrode 24 and theworkpiece fixture 60. Disposed in each of therecesses 76 is aspring element 124, which may have the form of a compression spring formed from a helical coil of wire. Eachspring element 124 is confined within therespective recess 76 and is captured between the base 78 and thelip 110 on therespective stop block 102. - As best shown in
FIG. 6 , thespring elements 124 are extended when theworkpiece fixture 60 is in the raised position. As a result, thelift plate 66 andworkpiece ring 68 of theworkpiece fixture 60 are supported in a resiliently floating manner atop thesupports 62. Under the load supplied by thelift plate 66 andworkpiece ring 68, thespring elements 124 collectively have a spring force sufficient to suspend or elevate thelift plate 66 above thetop surface 92 oflower electrode 24. - The
tapered surface 118 contacts the flaredsurface 100 on thehead 96 ofguide pin 86 to provide a positive stop for vertical motion when theworkpiece fixture 60 is in the raised position. The inclination angles of the flaredsurface 100 and thetapered surface 118 are matched so that each stop block 102 is self-centered on therespective guide pin 86 when theworkpiece fixture 60 is in the raised position. This permits theworkpiece fixture 60 to return to a reproducible spatial location when residing in the raised position. In turn, this provides a reproducible location withinplasma processing system 10 for theworkpiece 30 carried by theworkpiece fixture 60. - As explained in detail below, movement of the
lid 14 toward a lowered position (FIG. 5 ) moves theworkpiece fixture 60 toward a lowered position and, thereby, compresses thespring elements 124. As theworkpiece fixture 60 is lowered, thehead 96 of each of the guide pins 86 moves in itsrespective passageway 108 toward thelift plate 66. - As best shown in
FIGS. 3 and 3A , theworkpiece fixture 60 includes acentral opening 130 extending entirely through thelift plate 66 andworkpiece ring 68, and agap 132 that extends radially from thecentral opening 130 to theouter perimeter 65 of theworkpiece fixture 60. Thecover plate 70 is dimensioned with a width substantially identical to the width of thegap 132. When theworkpiece fixture 60 is lowered to a process position, thecover plate 70 fills thegap 132 so that thecentral opening 130 is surrounded by a substantially planar surface defined collectively by atop surface 134 of theworkpiece ring 68 and atop surface 136 of thecover plate 70. To promote the requisite coplanar arrangement, the respective thicknesses of thecover plate 70 andworkpiece fixture 60 are selected to be approximately equal, which permits thetop surfaces workpiece fixture 60 is in its lowered position. Thecentral opening 130 is round in the representative embodiment. However, thecentral opening 130 may have other shapes, such as rectangular. - The
gap 132 is defined between confrontingsidewalls workpiece ring 68. The width of thegap 132 in theworkpiece fixture 60 is selected such that an end effector can pass through thegap 132 and access thecentral opening 130 for transferringunprocessed workpieces 30 to theworkpiece fixture 60 and removing processedworkpieces 30 from theworkpiece fixture 60. The end effector is operatively coupled with a robot, such as a selective compliant articulated/assembly robot arm (SCARA) robot, as understood by a person having ordinary skill in the art. - The
lower electrode 24 further comprises aremovable electrode section 138, which includes a mountingflange 140 situated in a recess defined in thelower electrode 24 and apedestal portion 142. Thepedestal portion 142, which defines a representative workpiece support, projects from the mountingflange 140 toward theupper electrode 22. Theelectrode section 138 is secured with conventional fasteners to the underlying and surrounding remainder of thelower electrode 24. Thetop surface 92 oflower electrode 24 and thetop surface 92 of the mountingflange 140 are approximately flush. The surface area of atop surface 144 of thepedestal portion 142, which is elevated above the surrounding mountingflange 140, is approximately equal to the open cross-sectional area radially inside thecentral opening 130. The diameter of thepedestal portion 142 is approximately equal to the diameter of thecentral opening 130 ofworkpiece ring 68. Theelectrode section 138 has a good electrical contact with the remainder of thelower electrode 24 so that thepedestal portion 142 andsupport 74 are at substantially the same potential as thelower electrode 24 when theplasma processing system 10 is operating and a plasma is present in theprocessing region 28. - The
cover plate 70 comprises another raised region of theelectrode section 138 that projects above the plane of the mountingflange 140. Thecover plate 70 andpedestal portion 142 may comprise a single or unitary raised region projecting from the mountingflange 140. Alternatively, thecover plate 70 may comprise a separate component that is mounted to theelectrode section 138 and, in this instance, may include locating pins (not shown) or the like used to automatically position thecover plate 70 relative to thecentral opening 130 in theworkpiece fixture 60. - When the
workpiece fixture 60 is lowered to a process position, contact between the workpiece 30 and thetop surface 144 ofpedestal portion 142 transfers theworkpiece 30 from theworkpiece ring 68 to thepedestal portion 142. The transfer of theworkpiece 30 is accomplished without any structure on thepedestal portion 142, thelower electrode 24, or thebase 16 of theenclosure 12 guiding theworkpiece 30 onto thepedestal portion 142. In the lowered process position of theworkpiece fixture 60, thetop surface 134 ofworkpiece ring 68 is recessed slightly below thetop surface 144 of thepedestal portion 142. During plasma treatment, theworkpiece 30 rests on thetop surface 144 of thepedestal portion 142. - The
electrode section 138 and thelift plate 66 are constructed from an electrical conductor, such as aluminum. Thecap 72 on thecover plate 70 and theworkpiece ring 68 are constructed from an electrical insulator or dielectric, such as alumina or high-purity alumina. Alternatively, thecap 72 on thecover plate 70 and theworkpiece ring 68 may also be constructed from an electrical conductor, such as aluminum. The selection of a constituent material for thecap 72 of thecover plate 70 and theworkpiece ring 68 is dictated by the type of plasma performance required in theplasma processing system 10 for a particular plasma process onworkpiece 30. - With reference to
FIGS. 3A and 4 , one of thepush devices 64 is located spatially near eachinside corner 15 of separatingring 26 and, as apparent, near each corresponding outside corner (not shown) of theupper electrode 22. Each of thepush devices 64 includes apusher block 150, which is secured with theupper electrode 22 by the cooperation between aninsert 152 and ashoulder bolt 154, and aspring element 156. Each of the pusher blocks 150 has a substantially overlying relationship with a respective one of the stop blocks 102. One end of thespring element 156, which may have the form of a compression spring formed from a helical coil of wire, is captured between anenlarged head 158 of thepusher block 150 and theupper electrode 22. Thepusher block 150 is constructed from an insulating or dielectric material, such as a ceramic, and theinsert 152 andshoulder bolt 154 may be formed from a metal, such as a stainless steel. Theshoulder bolt 154 has a threaded tip that is fastened in a threaded bolt hole in theupper electrode 22. Thepusher block 150 of eachpush device 64 is movable relative to theshoulder bolt 154 between a first position (FIG. 4 ) in which thespring element 156 is extended and a second position (FIG. 5 ) in which thespring element 156 is compressed. Thespring element 156 supplies a preloaded bias to eachpusher block 150 in the first position. - As the
lid 14 is moved toward thebase 16, thepusher block 150 of each of thepush devices 64 contacts thetop surface 134 ofworkpiece ring 68 and thespring elements 156 begin to compress. As thelid 14 approaches thebase 16, thespring elements 156 are further compressed, which applies an increasing force to theworkpiece ring 68 that causes theworkpiece fixture 60 to move toward thetop surface 144 of thepedestal portion 142 and toward thelower electrode 24. When theworkpiece fixture 60 is in the fully lowered position, the taperedexterior sidewall 114 on each stop block 102 contacts the flaredrim 90 ofrecess 76 and eachpusher block 150 is moved to its second position. - The inclination angles of the flared
rim 90 and taperedexterior sidewall 114 are approximately equal or matched. When theworkpiece fixture 60 is in the lowered position, each of the flared rims 90 is in contact with the respective one of theexterior sidewalls 114. The contact automatically self-centers each stop block 102 within itsrespective recess 76. Consequently, each time that thelid 14 is lowered, theworkpiece fixture 60 returns to a reproducible spatial location relative to thelower electrode 24 andremovable electrode section 138 when thelid 14 moves theworkpiece fixture 60 to the lowered position. In turn, this provides a reproducible location forsuccessive workpieces 30 on thepedestal portion 142 during each sequential plasma treatments. - With reference to
FIGS. 3 , 3A, 7, 8A, and 8B in which like reference numerals refer to like features and in accordance with an embodiment of the invention, theplasma processing system 10 further includes a sacrificial ring, which is generally indicated byreference numeral 160. When thebottom surface 29 ofworkpiece 30 is supported on thetop surface 144 of thepedestal portion 142, thesacrificial ring 160 extends circumferentially about an outerperipheral edge 31 encircling the perimeter of theworkpiece 30 in a concentric relationship with theworkpiece 30. - The
sacrificial ring 160 includes a body 161 consisting of afirst section 168 that is mounted to acurved shoulder 164 of thelift plate 66 ofworkpiece ring 68 and asecond section 170 that is mounted to ashoulder 166 of thesupport 74 ofcover plate 70. Thefirst section 168 comprises an arc of greater arc length than the arc presented by thesecond section 170. Thecurved shoulder 164, which is defined in thelift plate 66 of theworkpiece ring 68, coaxially encircles thecentral opening 130 and terminates at an intersection withsidewalls gap 132. Thecurved shoulder 164, which opens onto thecentral opening 130, is recessed relative to thetop surface 92 of theworkpiece ring 68. Thecurved shoulder 166, which is defined in thesupport 74 of thecover plate 70, is juxtaposed with theshoulder 164 whenworkpiece fixture 60 is in the lowered position to geometrically close a complete circular object.Shoulder 166, which also opens onto thecentral opening 130, is recessed relative to thetop surface 136 of thecover plate 70. Thesections sacrificial ring 160 may be secured with thelift plate 66 andsupport 74 by a pin-in-socket typeengagement using pins - The
first section 168 of thesacrificial ring 160 includes aridge 176 and a shoulder or rim 178 that is disposed radially inside of theridge 176. Theridge 176 of thefirst section 168 projects above therim 178 so that theperipheral edge 31 ofworkpiece 30, which connects the top andbottom surfaces workpiece 30, overlies therim 178 and is disposed radially inside ofridge 176. Likewise, thesecond section 170 of thesacrificial ring 160 includes aridge 180 and a shoulder or rim 182 that is disposed radially inside of theridge 180. Theridge 180 of thesecond section 170 projects above therim 182 so that theperipheral edge 31 ofworkpiece 30 overlies therim 182 and is disposed radially inside ofrim 182. Thesections - The radial dimension or width of the
rim 178 is selected such that only a thin annular surface area on thebottom surface 29 and extending about theperipheral edge 31 of theworkpiece 30 is contacted by therim 178. In one embodiment, the contacted width may be an annulus extending approximately equal to 3 millimeters radially inward from theperipheral edge 31 ofworkpiece 30. The diameter of thecentral opening 130 in thelift plate 66 is approximately equal to the diameter of theworkpiece 30 less the radial dimension of therims - As best shown in
FIG. 8B , theridges rims workpiece fixture 60 is in the lowered process position. The relationship between thesections FIG. 8A with theworkpiece fixture 60 is its elevated condition and inFIG. 8B with theworkpiece fixture 60 in its lowered condition with thelid 14 closed and ready to process theworkpiece 30. The alignment of theridges workpiece fixture 60 is lowered, defines a substantially continuous ring of material with a radial dimension that effectively shifts the location of the outer peripheral edge of theworkpiece 30 radially outward toward the outer diameter of thesacrificial ring 160. The top surface of theridges workpiece 30. Thesacrificial ring 160 has a non-contacting relationship with theworkpiece 30 when theworkpiece fixture 60 is in its lowered position. - The
sacrificial ring 160, which in one embodiment may be about 10 millimeters wide, is formed from a consumable material that etches when exposed to the plasma. The consumable material may be composed of an organic polymer or another material (i.e., silicon) similar in composition to the material of theworkpiece 30 to be plasma etched. Suitable organic polymers may include, but are not limited to, polyetheretherketone (PEEK), polyimide, and polyamide or nylon. Thesacrificial ring 160 may be fabricated from these types of materials by techniques familiar to a person having ordinary skill in the art. - Organic polymers may be particular suitable materials for the composition of the
sacrificial ring 160 if, for example, the plasma of theplasma treatment system 10 is being used to strip a layer of photoresist from theworkpiece 30. In this instance, the material composing thesacrificial ring 160 is similar to the composition of the material being removed by plasma etching from the workpiece. When eroded by plasma etching, the material of thesacrificial ring 160 may form etch byproducts that are relatively volatile and, as a result, that are readily evacuated from theprocessing region 28 byvacuum pump 36. Accordingly, the contamination or residue on the sidewalls 13 ofvacuum enclosure 12 and the components therein, including theworkpiece 30 itself, from the etching of thesacrificial ring 160 may be negligible. - The radial dimension of the
ridges workpiece 30. In other words, theworkpiece 30 presents a larger effective diameter to the plasma so that the intrinsic zone of relatively high etch rate, which originates from workpiece edge effects, etches thesacrificial ring 160, rather than theworkpiece 30 at its peripheral rim. The uniformity of plasma treatment across theworkpiece 30 is improved because this higher etch rate is shifted radially outwardly and off theworkpiece 30. Theridges processing region 28 when thesystem 10 is used to generate plasma and treat thetop surface 27 of theworkpiece 30. Generally, thesacrificial ring 160 has an annular geometrical shape characterized by an inner diameter, ID, approximately equal to an outer diameter of the outerperipheral edge 31 of theworkpiece 30. The difference in the inner diameter, ID, and the outer diameter of thesacrificial ring 160 defines its effective radial dimension. - The
sacrificial ring 160 can be used to shift the edge effect inherent in plasma treatment from the outerperipheral edge 31 of theworkpiece 30 to aperimeter 162 of thesacrificial ring 160. By this mechanism and although not wishing to be limited by theory, thesacrificial ring 160 is believed to operate to alleviate or mitigate the workpiece edge effect at the periphery by sacrificing its own treatment uniformity during plasma processes as the preferential edge effect increases the etch rate mainly over the consumable material of thesacrificial ring 160. Consequently, the etch rate is more uniform across theworkpiece 30 as less variation in etch rate occurs between central and peripheral edge regions ofworkpiece 30. - The lifetime of the
sacrificial ring 160 for maintaining its effectiveness in effectively shifting the location of the outer peripheral edge of theworkpiece 30 may be contingent upon its constituent material and the specifics of the plasma process. Thesacrificial ring 160 may be replaced, as necessary, as it is a consumable component. - The
sacrificial ring 160 represents a simple and effective technique for improving the across-wafer uniformity of a plasma treatment in a wafer level application, such as plasma etching, photoresist stripping or descumming, surface cleaning, surface activation, and thin film deposition. Thesacrificial ring 160 can be implemented without significantly increasing the capital cost of theplasma treatment system 10. Furthermore, thesacrificial ring 160 can be used to improve the uniformity of plasma treatment across the workpiece without requiring time-consuming or expensive etch processes or etch equipment. Plasma treatment systems can be retrofit, in a simple and inexpensive manner, with thesacrificial ring 160 to address the etch uniformity problems arising from edge effects. - References herein to terms such as “vertical”, “horizontal”, etc. are made by way of example, and not by way of limitation, to establish a three-dimensional frame of reference. The term “horizontal” as used herein is defined as a plane substantially parallel to a plane containing one of the confronting surfaces of the
electrodes - While the invention has been illustrated by a description of various embodiments and while these embodiments have been described in considerable detail, it is not the intention of the applicants to restrict or in any way limit the scope of the appended claims to such detail. Additional advantages and modifications will readily appear to those skilled in the art. The invention in its broader aspects is therefore not limited to the specific details, representative apparatus and methods, and illustrative examples shown and described. Accordingly, departures may be made from such details without departing from the spirit or scope of applicant's general inventive concept. The scope of the invention itself should only be defined by the appended claims.
Claims (19)
1. An apparatus for use in plasma processing a workpiece having an outer peripheral edge, the apparatus comprising:
a sacrificial body composed of a plasma-removable material, said sacrificial body adapted to be arranged about the outer peripheral edge of the workpiece so that an outer diameter of the workpiece is effectively increased.
2. The apparatus of claim 1 wherein said sacrificial body includes a plurality of sections arranged to have an annular geometrical shape when placed in a juxtaposed relationship, said plurality of sections configured to be arranged concentrically with the workpiece.
3. The apparatus of claim 1 wherein said sacrificial body is composed of an organic polymer.
4. The apparatus of claim 3 wherein said organic polymer is polyetheretherketone (PEEK), polyimide, or polyamide.
5. The apparatus of claim 1 wherein said sacrificial body is composed of a material similar in composition to a material constituting a portion of the workpiece exposed to the plasma.
6. The apparatus of claim 1 wherein said sacrificial body has an annular geometrical shape and an inner diameter approximately equal to an outer diameter of the outer peripheral edge of the workpiece.
7. An apparatus for plasma processing a workpiece having an outer peripheral edge, a first surface, and a second surface connected by the outer peripheral edge, the apparatus comprising:
a vacuum enclosure configured to contain a plasma, said vacuum enclosure including a support pedestal adapted to contact and support the second surface of the workpiece when the first surface of the workpiece is exposed to the plasma; and
a sacrificial body composed of a plasma-removable material, said sacrificial body extending about the outer peripheral edge of the workpiece supported on said pedestal so that an outer diameter of the workpiece is effectively increased.
8. The apparatus of claim 7 wherein said sacrificial body includes a plurality of sections arranged to have an annular geometrical shape when placed in a juxtaposed relationship, said plurality of sections configured to be arranged concentrically with the workpiece.
9. The apparatus of claim 8 further comprising:
a wafer lift mechanism disposed inside said vacuum enclosure, said wafer lift mechanism including a wafer fixture movable between a first position in which said wafer fixture holds the workpiece in a non-contacting relationship with said support pedestal and a second position in which said wafer fixture places the second surface of the workpiece in a contacting relationship with said support pedestal, and said first section of said sacrificial body is carried by said wafer fixture.
10. The apparatus of claim 9 wherein said second section is mounted adjacent to said support pedestal, and said second section is stationary when said wafer fixture is moved between the first and second positions.
11. The apparatus of claim 7 wherein said sacrificial body is composed of an organic polymer.
12. The apparatus of claim 11 wherein said organic polymer is polyetheretherketone (PEEK), polyimide, or polyamide.
13. The apparatus of claim 7 wherein said sacrificial body is composed of a material similar in composition to a material constituting a portion of the workpiece exposed to the plasma.
14. The apparatus of claim 7 wherein said sacrificial body has an annular geometrical shape and an inner diameter approximately equal to an outer diameter of the outer peripheral edge of the workpiece.
15. A method for plasma etching a workpiece having a first surface, a second surface, and an outer peripheral edge connecting the first and second surfaces, the method comprising:
arranging a sacrificial body composed of a plasma-removable material about the outer peripheral edge of the workpiece;
exposing the first surface of the workpiece and the sacrificial body to a plasma; and
shifting a maximum etch rate from a location on the first surface of the workpiece to a different location on the sacrificial body.
16. The method of claim 15 further comprising:
supporting the first surface of the workpiece on a support pedestal positioned inside a vacuum enclosure confining the plasma during the etching process.
17. The method of claim 15 wherein the sacrificial body is divided into a plurality of sections that, when aligned, define an annular geometrical shape, and further comprising:
temporarily supporting the workpiece on a wafer lift mechanism disposed inside the vacuum enclosure;
moving the wafer lift mechanism to transfer the workpiece from the wafer lift mechanism to the support pedestal; and
when the workpiece is transferred, aligning at least one of the sections of the sacrificial body with at least another of the sections of the sacrificial body to define a substantially continuous annular geometrical shape.
18. The method of claim 17 further comprising:
supporting the workpiece on the support pedestal while the first surface of the workpiece is etched.
19. The method of claim 15 further comprising:
eroding the material of the sacrificial body with the exposure to the plasma; and
replacing the sacrificial body with another sacrificial body after sufficient erosion of the sacrificial body occurs.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/125,335 US20080296261A1 (en) | 2007-06-01 | 2008-05-22 | Apparatus and methods for improving treatment uniformity in a plasma process |
JP2010510438A JP2010529656A (en) | 2007-06-01 | 2008-05-23 | Apparatus and method for improving processing uniformity of plasma process |
KR1020097024756A KR20100025515A (en) | 2007-06-01 | 2008-05-23 | Apparatus and methods for improving treatment uniformity in a plasma process |
CN2008800184440A CN101681785B (en) | 2007-06-01 | 2008-05-23 | Apparatus and methods for improving treatment uniformity in a plasma process |
PCT/US2008/064670 WO2008150739A1 (en) | 2007-06-01 | 2008-05-23 | Apparatus and methods for improving treatment uniformity in a plasma process |
DE112008001482T DE112008001482T5 (en) | 2007-06-01 | 2008-05-23 | Apparatus and method for improving treatment uniformity in a plasma process |
TW097120323A TW200905777A (en) | 2007-06-01 | 2008-05-30 | Apparatus and methods for improving treatment uniformity in a plasma process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94151807P | 2007-06-01 | 2007-06-01 | |
US12/125,335 US20080296261A1 (en) | 2007-06-01 | 2008-05-22 | Apparatus and methods for improving treatment uniformity in a plasma process |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080296261A1 true US20080296261A1 (en) | 2008-12-04 |
Family
ID=40086939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/125,335 Abandoned US20080296261A1 (en) | 2007-06-01 | 2008-05-22 | Apparatus and methods for improving treatment uniformity in a plasma process |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080296261A1 (en) |
JP (1) | JP2010529656A (en) |
KR (1) | KR20100025515A (en) |
CN (1) | CN101681785B (en) |
DE (1) | DE112008001482T5 (en) |
TW (1) | TW200905777A (en) |
WO (1) | WO2008150739A1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090308440A1 (en) * | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Formation of solar cell-selective emitter using implant and anneal method |
US20100323508A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Implant Technologies Inc. | Plasma grid implant system for use in solar cell fabrications |
US20140034610A1 (en) * | 2012-08-06 | 2014-02-06 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
US8986564B2 (en) | 2006-08-22 | 2015-03-24 | Nordson Corporation | Apparatus and methods for handling workpieces in a processing system |
US9318332B2 (en) | 2012-12-19 | 2016-04-19 | Intevac, Inc. | Grid for plasma ion implant |
US9324598B2 (en) | 2011-11-08 | 2016-04-26 | Intevac, Inc. | Substrate processing system and method |
US10109448B2 (en) | 2008-05-20 | 2018-10-23 | Nordson Corporation | Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165374B (en) * | 2011-12-08 | 2017-05-10 | 中微半导体设备(上海)有限公司 | Plasma processing device and edge ring applied to the same |
WO2020027919A1 (en) * | 2018-07-30 | 2020-02-06 | Nordson Corporation | Systems for workpiece processing with plasma |
CN113035680A (en) * | 2019-12-24 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Leveling mechanism for vacuum equipment and plasma processing device |
CN111180370A (en) * | 2020-02-21 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Wafer bearing tray and semiconductor processing equipment |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4786359A (en) * | 1987-06-24 | 1988-11-22 | Tegal Corporation | Xenon enhanced plasma etch |
US6014979A (en) * | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US20030066484A1 (en) * | 2001-09-26 | 2003-04-10 | Kawasaki Microelectronics, Inc. | Electrode cover, plasma apparatus utilizing the cover, and method of fitting the cover onto the plasma electrode |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
US20050011458A1 (en) * | 2002-03-15 | 2005-01-20 | Aggarwal Ravinder K. | Wafer holder with peripheral lift ring |
US20060016561A1 (en) * | 2004-07-20 | 2006-01-26 | Sung-Sok Choi | Semiconductor etching apparatus |
US20060118243A1 (en) * | 2004-12-02 | 2006-06-08 | Min-Woong Choi | Wafer support having cooling passageway for cooling a focus ring in plasma processing equipment |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0373524A (en) * | 1989-08-14 | 1991-03-28 | Fujitsu Ltd | Etching |
US20010049196A1 (en) * | 1997-09-09 | 2001-12-06 | Roger Patrick | Apparatus for improving etch uniformity and methods therefor |
DE29813326U1 (en) * | 1998-07-29 | 1998-12-10 | Protec Ges Fuer Werkstoff Und | Improved device for protecting electrostatic holding systems in systems for processing wafers |
JP2000299305A (en) * | 1999-04-16 | 2000-10-24 | Toshiba Corp | Plasma treatment system |
US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
CN101506066B (en) * | 2006-08-22 | 2012-11-28 | 诺信公司 | Apparatus and method for handling workpieces in a processing system |
-
2008
- 2008-05-22 US US12/125,335 patent/US20080296261A1/en not_active Abandoned
- 2008-05-23 KR KR1020097024756A patent/KR20100025515A/en not_active Application Discontinuation
- 2008-05-23 WO PCT/US2008/064670 patent/WO2008150739A1/en active Application Filing
- 2008-05-23 DE DE112008001482T patent/DE112008001482T5/en not_active Withdrawn
- 2008-05-23 JP JP2010510438A patent/JP2010529656A/en active Pending
- 2008-05-23 CN CN2008800184440A patent/CN101681785B/en not_active Expired - Fee Related
- 2008-05-30 TW TW097120323A patent/TW200905777A/en unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4786359A (en) * | 1987-06-24 | 1988-11-22 | Tegal Corporation | Xenon enhanced plasma etch |
US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
US6014979A (en) * | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
US20030066484A1 (en) * | 2001-09-26 | 2003-04-10 | Kawasaki Microelectronics, Inc. | Electrode cover, plasma apparatus utilizing the cover, and method of fitting the cover onto the plasma electrode |
US20050011458A1 (en) * | 2002-03-15 | 2005-01-20 | Aggarwal Ravinder K. | Wafer holder with peripheral lift ring |
US20060016561A1 (en) * | 2004-07-20 | 2006-01-26 | Sung-Sok Choi | Semiconductor etching apparatus |
US20060118243A1 (en) * | 2004-12-02 | 2006-06-08 | Min-Woong Choi | Wafer support having cooling passageway for cooling a focus ring in plasma processing equipment |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8986564B2 (en) | 2006-08-22 | 2015-03-24 | Nordson Corporation | Apparatus and methods for handling workpieces in a processing system |
US10109448B2 (en) | 2008-05-20 | 2018-10-23 | Nordson Corporation | Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes |
US8871619B2 (en) | 2008-06-11 | 2014-10-28 | Intevac, Inc. | Application specific implant system and method for use in solar cell fabrications |
US20090308450A1 (en) * | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Solar cell fabrication with faceting and ion implantation |
US8697553B2 (en) | 2008-06-11 | 2014-04-15 | Intevac, Inc | Solar cell fabrication with faceting and ion implantation |
US20090308440A1 (en) * | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Formation of solar cell-selective emitter using implant and anneal method |
US20100323508A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Implant Technologies Inc. | Plasma grid implant system for use in solar cell fabrications |
US10636935B2 (en) * | 2009-06-23 | 2020-04-28 | Intevac, Inc. | Ion implant system having grid assembly |
US8697552B2 (en) * | 2009-06-23 | 2014-04-15 | Intevac, Inc. | Method for ion implant using grid assembly |
US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US9741894B2 (en) * | 2009-06-23 | 2017-08-22 | Intevac, Inc. | Ion implant system having grid assembly |
US20150072461A1 (en) * | 2009-06-23 | 2015-03-12 | Intevac, Inc. | Ion implant system having grid assembly |
US20120125259A1 (en) * | 2009-06-23 | 2012-05-24 | Intevac, Inc. | Ion implant system having grid assembly |
US8997688B2 (en) * | 2009-06-23 | 2015-04-07 | Intevac, Inc. | Ion implant system having grid assembly |
US20170345964A1 (en) * | 2009-06-23 | 2017-11-30 | Intevac, Inc. | Ion implant system having grid assembly |
US20120129325A1 (en) * | 2009-06-23 | 2012-05-24 | Intevac, Inc. | Method for ion implant using grid assembly |
US9303314B2 (en) * | 2009-06-23 | 2016-04-05 | Intevac, Inc. | Ion implant system having grid assembly |
US20160181465A1 (en) * | 2009-06-23 | 2016-06-23 | Intevac, Inc. | Ion implant system having grid assembly |
US9875922B2 (en) | 2011-11-08 | 2018-01-23 | Intevac, Inc. | Substrate processing system and method |
US9324598B2 (en) | 2011-11-08 | 2016-04-26 | Intevac, Inc. | Substrate processing system and method |
WO2014025637A1 (en) * | 2012-08-06 | 2014-02-13 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
US9385017B2 (en) * | 2012-08-06 | 2016-07-05 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
TWI613755B (en) * | 2012-08-06 | 2018-02-01 | 能多順股份有限公司 | Apparatus and methods for handling workpieces of different sizes |
US20140034610A1 (en) * | 2012-08-06 | 2014-02-06 | Nordson Corporation | Apparatus and methods for handling workpieces of different sizes |
US9583661B2 (en) | 2012-12-19 | 2017-02-28 | Intevac, Inc. | Grid for plasma ion implant |
US9318332B2 (en) | 2012-12-19 | 2016-04-19 | Intevac, Inc. | Grid for plasma ion implant |
Also Published As
Publication number | Publication date |
---|---|
CN101681785B (en) | 2012-05-09 |
WO2008150739A1 (en) | 2008-12-11 |
CN101681785A (en) | 2010-03-24 |
DE112008001482T5 (en) | 2010-04-29 |
TW200905777A (en) | 2009-02-01 |
KR20100025515A (en) | 2010-03-09 |
JP2010529656A (en) | 2010-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20080296261A1 (en) | Apparatus and methods for improving treatment uniformity in a plasma process | |
US8245663B2 (en) | Apparatus and methods for handling workpieces in a processing system | |
US11404249B2 (en) | Substrate processing apparatus | |
KR101791991B1 (en) | Plasma processing apparatus | |
US8191505B2 (en) | Process gas introducing mechanism and plasma processing device | |
JP7345607B2 (en) | Substrate processing equipment | |
US6334983B1 (en) | Processing system | |
KR102653085B1 (en) | Cleaning method and substrate processing apparatus | |
KR101672856B1 (en) | Plasma processing apparatus | |
KR101850193B1 (en) | Mounting table and plasma processing apparatus | |
KR100823302B1 (en) | Plasma processing apparatus | |
KR20190000798A (en) | Plasma processing apparatus | |
KR102168255B1 (en) | Apparatus and methods for handling workpieces of different sizes | |
KR20200070118A (en) | Apparatus and method to reduce polymers deposition | |
US20190252159A1 (en) | Mounting apparatus for object to be processed and processing apparatus | |
US20220165551A1 (en) | Bottom electrode assembly, plasma processing apparatus, and method of replacing focus ring | |
CN114175207A (en) | Processing chamber with reduced plasma arcing | |
US20240079216A1 (en) | Apparatus for treating substrate and method for treating substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NORDSON CORPORATION, OHIO Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ZHAO, JIANGANG;GETTY, JAMES D.;REEL/FRAME:021287/0186 Effective date: 20080721 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |