US20090140178A1 - Switching micro-resonant structures by modulating a beam of charged particles - Google Patents

Switching micro-resonant structures by modulating a beam of charged particles Download PDF

Info

Publication number
US20090140178A1
US20090140178A1 US12/329,866 US32986608A US2009140178A1 US 20090140178 A1 US20090140178 A1 US 20090140178A1 US 32986608 A US32986608 A US 32986608A US 2009140178 A1 US2009140178 A1 US 2009140178A1
Authority
US
United States
Prior art keywords
resonant structure
resonant
charged particles
structures
directing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US12/329,866
Other versions
US8384042B2 (en
Inventor
Jonathan Gorrell
Mark Davidson
Michael E. Maines
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Plasmonics Inc
Original Assignee
Virgin Islands Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Virgin Islands Microsystems Inc filed Critical Virgin Islands Microsystems Inc
Priority to US12/329,866 priority Critical patent/US8384042B2/en
Publication of US20090140178A1 publication Critical patent/US20090140178A1/en
Assigned to APPLIED PLASMONICS, INC. reassignment APPLIED PLASMONICS, INC. NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS). Assignors: VIRGIN ISLAND MICROSYSTEMS, INC.
Assigned to ADVANCED PLASMONICS, INC. reassignment ADVANCED PLASMONICS, INC. NUNC PRO TUNC ASSIGNMENT (SEE DOCUMENT FOR DETAILS). Assignors: APPLIED PLASMONICS, INC.
Priority to US13/774,593 priority patent/US9076623B2/en
Application granted granted Critical
Publication of US8384042B2 publication Critical patent/US8384042B2/en
Priority to US14/487,263 priority patent/US20150001424A1/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • G21K5/04Irradiation devices with beam-forming means
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/022Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70Arrangements for deflecting ray or beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes

Definitions

  • the present invention is a continuation of U.S. patent application Ser. No. 11/325,534, filed Jan. 5, 2006, entitled “Switching Micro-Resonant Structures Using at Least One Director,” and is related to the following U.S. patent applications: (1) U.S. patent application Ser. No. 11/238,991, filed Sep. 30, 2005, entitled “Ultra-Small Resonating Charged Particle Beam Modulator;” (2) U.S. patent application Ser. No. 10/917,511, filed on Aug. 13, 2004, entitled “Patterning Thin Metal Film by Dry Reactive Ion Etching,” (3) U.S. application Ser. No. 11/203,407, filed on Aug.
  • This relates to the production of electromagnetic radiation (EMR) at selected frequencies and to the coupling of high frequency electromagnetic radiation to elements on a chip or a circuit board.
  • EMR electromagnetic radiation
  • At least one deflector is placed in between first and second resonant structures. After the beam passes by the first resonant structure, it is directed to a center path corresponding to the second resonant structure. The amount of deflection needed to direct the beam to the center path is based on the amount of deflection, if any, that the beam underwent as it passed by the first resonant structure. This process can be repeated in series as necessary to produce a set of resonant structures in series.
  • FIG. 1 is a generalized block diagram of a generalized resonant structure and its charged particle source
  • FIG. 2A is a top view of a non-limiting exemplary resonant structure for use with the present invention.
  • FIG. 2B is a top view of the exemplary resonant structure of FIG. 2A with the addition of a backbone;
  • FIGS. 2C-2H are top views of other exemplary resonant structures for use with the present invention.
  • FIG. 3 is a top view of a single color element having a first period and a first “finger” length according to one embodiment of the present invention
  • FIG. 4 is a top view of a single color element having a second period and a second “finger” length according to one embodiment of the present invention
  • FIG. 5 is a top view of a single color element having a third period and a third “finger” length according to one embodiment of the present invention
  • FIG. 6A is a top view of a multi-color element utilizing two deflectors according to one embodiment of the present invention.
  • FIG. 6B is a top view of a multi-color element utilizing a single, integrated deflector according to one embodiment of the present invention.
  • FIG. 6C is a top view of a multi-color element utilizing a single, integrated deflector and focusing optics according to one embodiment of the present invention.
  • FIG. 6D is a top view of a multi-color element utilizing plural deflectors along various points in the path of the beam according to one embodiment of the present invention.
  • FIG. 7 is a top view of a multi-color element utilizing two serial deflectors according to one embodiment of the present invention.
  • FIG. 8 is a perspective view of a single wavelength element having a first period and a first resonant frequency or “finger” length according to one embodiment of the present invention
  • FIG. 9 is a perspective view of a single wavelength element having a second period and a second “finger” length according to one embodiment of the present invention.
  • FIG. 10 is a perspective view of a single wavelength element having a third period and a third “finger” length according to one embodiment of the present invention.
  • FIG. 11 is a perspective view of a portion of a multi-wavelength element having wavelength elements with different periods and “finger” lengths;
  • FIG. 12 is a top view of a multi-wavelength element according to one embodiment of the present invention.
  • FIG. 13 is a top view of a multi-wavelength element according to another embodiment of the present invention.
  • FIG. 14 is a top view of a multi-wavelength element utilizing two deflectors with variable amounts of deflection according to one embodiment of the present invention.
  • FIG. 15 is a top view of a multi-wavelength element utilizing two deflectors according to another embodiment of the present invention.
  • FIG. 16 is a top view of a multi-intensity element utilizing two deflectors according to another embodiment of the present invention.
  • FIG. 17A is a top view of a multi-intensity element using plural inline deflectors
  • FIG. 17B is a top view of a multi-intensity element using plural attractive deflectors above the path of the beam;
  • FIG. 17C is a view of a first deflectable beam for turning the resonant structures on and off without needing a separate data input on the source of charged particles and without having to turn off the source of charged particles;
  • FIG. 17D is a view of a second deflectable beam for turning the resonant structures on and off without needing a separate data input on the source of charged particles and without having to turn off the source of charged particles;
  • FIG. 18A is a top view of a multi-intensity element using finger of varying heights
  • FIG. 18B is a top view of a multi-intensity element using finger of varying heights
  • FIG. 19A is a top view of a fan-shaped resonant element that enables varying intensity based on the amount of deflection of the beam;
  • FIG. 19B is a top view of another fan-shaped resonant element that enables varying intensity based on the amount of deflection of the beam.
  • FIG. 20 is a microscopic photograph of a series of resonant segments
  • FIG. 21A is a high-level block diagram of a set of “normally on” resonant structures in series which are all excited by the same source of charged particles;
  • FIG. 21B is a high-level block diagram of a set of “normally on” resonant structures in series which are all excited by the same source of charged particles after undergoing refocusing by at least one focusing element between resonant structures;
  • FIG. 21C is a high-level block diagram of a set of “normally off” resonant structures in series which are all excited by the same source of charged particles;
  • FIG. 22A is a high-level block diagram of a series of resonant structures laid out in rows in which the direction of the beam is reversed;
  • FIG. 22B is a high-level block diagram of a series of resonant structures laid out in a U-shaped pattern in which the direction of the beam is changed at least twice;
  • FIGS. 22C-22D are high-level diagrams of additional shapes of paths that a beam can take when exciting plural resonant structures.
  • FIG. 23 is a high-level diagram of a series of multi-color resonant structures which are driven by the same source.
  • a wavelength element 100 on a substrate 105 can be produced from at least one resonant structure 110 that emits light (such as infrared light, visible light or ultraviolet light or any other electromagnetic radiation (EMR) 150 at a wide range of frequencies, and often at a frequency higher than that of microwave).
  • the EMR 150 is emitted when the resonant structure 110 is exposed to a beam 130 of charged particles ejected from or emitted by a source of charged particles 140 .
  • the source 140 is controlled by applying a signal on data input 145 .
  • the source 140 can be any desired source of charged particles such as an electron gun, a cathode, an ion source, an electron source from a scanning electron microscope, etc.
  • a resonant structure 110 may comprise a series of fingers 115 which are separated by a spacing 120 measured as the beginning of one finger 115 to the beginning of an adjacent finger 115 .
  • the finger 115 has a thickness that takes up a portion of the spacing between fingers 115 .
  • the fingers also have a length 125 and a height (not shown). As illustrated, the fingers of FIG. 2A are perpendicular to the beam 130 .
  • Resonant structures 110 are fabricated from resonating material (e.g., from a conductor such as metal (e.g., silver, gold, aluminum and platinum or from an alloy) or from any other material that resonates in the presence of a charged particle beam).
  • resonating material e.g., from a conductor such as metal (e.g., silver, gold, aluminum and platinum or from an alloy) or from any other material that resonates in the presence of a charged particle beam.
  • Other exemplary resonating materials include carbon nanotubes and high temperature superconductors.
  • the various resonant structures can be constructed in multiple layers of resonating materials but are preferably constructed in a single layer of resonating material (as described above).
  • all the resonant structures 110 of a resonant element 100 are etched or otherwise shaped in the same processing step.
  • the resonant structures 110 of each resonant frequency are etched or otherwise shaped in the same processing step.
  • all resonant structures having segments of the same height are etched or otherwise shaped in the same processing step.
  • all of the resonant elements 100 on a substrate 105 are etched or otherwise shaped in the same processing step.
  • the material need not even be a contiguous layer, but can be a series of resonant elements individually present on a substrate.
  • the materials making up the resonant elements can be produced by a variety of methods, such as by pulsed-plating, depositing, sputtering or etching. Preferred methods for doing so are described in co-pending U.S. application Ser. No. 10/917,571, filed on Aug. 13, 2004, entitled “Patterning Thin Metal Film by Dry Reactive Ion Etching,” and in U.S. application Ser. No. 11/203,407, filed on Aug. 15, 2005, entitled “Method Of Patterning Ultra-Small Structures,” both of which are commonly owned at the time of filing, and the entire contents of each of which are incorporated herein by reference.
  • etching does not need to remove the material between segments or posts all the way down to the substrate level, nor does the plating have to place the posts directly on the substrate.
  • Silver posts can be on a silver layer on top of the substrate. In fact, we discovered that, due to various coupling effects, better results are obtained when the silver posts are set on a silver layer, which itself is on the substrate.
  • the fingers of the resonant structure 110 can be supplemented with a backbone.
  • the backbone 112 connects the various fingers 115 of the resonant structure 110 forming a comb-like shape on its side.
  • the backbone 112 would be made of the same material as the rest of the resonant structure 110 , but alternate materials may be used.
  • the backbone 112 may be formed in the same layer or a different layer than the fingers 110 .
  • the backbone 112 may also be formed in the same processing step or in a different processing step than the fingers 110 . While the remaining figures do not show the use of a backbone 112 , it should be appreciated that all other resonant structures described herein can be fabricated with a backbone also.
  • the shape of the fingers 115 R may also be shapes other than rectangles, such as simple shapes (e.g., circles, ovals, arcs and squares), complex shapes (e.g., such as semi-circles, angled fingers, serpentine structures and embedded structures (i.e., structures with a smaller geometry within a larger geometry, thereby creating more complex resonances)) and those including waveguides or complex cavities.
  • the finger structures of all the various shapes will be collectively referred to herein as “segments.”
  • Other exemplary shapes are shown in FIGS. 2C-2H , again with respect to a path of a beam 130 . As can be seen at least from FIG. 2C , the axis of symmetry of the segments need not be perpendicular to the path of the beam 130 .
  • FIG. 3 a wavelength element 100 R for producing electromagnetic radiation with a first frequency is shown as having been constructed on a substrate 105 .
  • the illustrated embodiments of FIGS. 3 , 4 and 5 are described as producing red, green and blue light in the visible spectrum, respectively.
  • the spacings and lengths of the fingers 115 R, 115 G and 115 B of the resonant structures 110 R, 110 G and 110 B, respectively are for illustrative purposes only and not intended to represent any actual relationship between the period 120 of the fingers, the lengths of the fingers 115 and the frequency of the emitted electromagnetic radiation.
  • the dimensions of exemplary resonant structures are provided in the table below.
  • the intensity of the radiation may change as well.
  • harmonics e.g., second and third harmonics
  • intensity appears oscillatory in that finding the optimal peak of each mode created the highest output.
  • the alignment of the geometric modes of the fingers are used to increase the output intensity.
  • there are also radiation components due to geometric mode excitation during this time but they do not appear to dominate the output.
  • Optimal overall output comes when there is constructive modal alignment in as many axes as possible.
  • a sweep of the duty cycle of the cavity space width and the post thickness indicates that the cavity space width and period (i.e., the sum of the width of one cavity space width and one post) have relevance to the center frequency of the resultant radiation. That is, the center frequency of resonance is generally determined by the post/space period.
  • a series of posts can be constructed that output substantial EMR in the infrared, visible and ultraviolet portions of the spectrum and which can be optimized based on alterations of the geometry, electron velocity and density, and metal/layer type. It should also be possible to generate EMR of longer wavelengths as well. Unlike a Smith-Purcell device, the resultant radiation from such a structure is intense enough to be visible to the human eye with only 30 nanoamperes of current.
  • a beam 130 of charged particles (e.g., electrons, or positively or negatively charged ions) is emitted from a source 140 of charged particles under the control of a data input 145 .
  • the beam 130 passes close enough to the resonant structure 110 R to excite a response from the fingers and their associated cavities (or spaces).
  • the source 140 is turned on when an input signal is received that indicates that the resonant structure 110 R is to be excited. When the input signal indicates that the resonant structure 110 R is not to be excited, the source 140 is turned off.
  • the illustrated EMR 150 is intended to denote that, in response to the data input 145 turning on the source 140 , a red wavelength is emitted from the resonant structure 110 R.
  • the beam 130 passes next to the resonant structure 110 R which is shaped like a series of rectangular fingers 115 R or posts.
  • the resonant structure 110 R is fabricated utilizing any one of a variety of techniques (e.g., semiconductor processing-style techniques such as reactive ion etching, wet etching and pulsed plating) that produce small shaped features.
  • semiconductor processing-style techniques such as reactive ion etching, wet etching and pulsed plating
  • electromagnetic radiation 150 is emitted there from which can be directed to an exterior of the element 110 .
  • a green element 100 G includes a second source 140 providing a second beam 130 in close proximity to a resonant structure 110 G having a set of fingers 115 G with a spacing 120 G, a finger length 125 G and a finger height 155 G (see FIG. 9 ) which may be different than the spacing 120 R, finger length 125 G and finger height 155 R of the resonant structure 110 R.
  • the finger length 125 , finger spacing 120 and finger height 155 may be varied during design time to determine optimal finger lengths 125 , finger spacings 120 and finger heights 155 to be used in the desired application.
  • a blue element 100 B includes a third source 140 providing a third beam 130 in close proximity to a resonant structure 110 B having a set of fingers 115 B having a spacing 120 B, a finger length 125 B and a finger height 155 B (see FIG. 10 ) which may be different than the spacing 120 R, length 125 R and height 155 R of the resonant structure 110 R and which may be different than the spacing 120 G, length 125 G and height 155 G of the resonant structure 110 G.
  • the cathode sources of electron beams are usually best constructed off of the chip or board onto which the conducting structures are constructed.
  • the same conductive layer can produce multiple light (or other EMR) frequencies by selectively inducing resonance in one of plural resonant structures that exist on the same substrate 105 .
  • an element is produced such that plural wavelengths can be produced from a single beam 130 .
  • two deflectors 160 are provided which can direct the beam towards a desired resonant structure 110 G, 110 B or 110 R by providing a deflection control voltage on a deflection control terminal 165 .
  • One of the two deflectors 160 is charged to make the beam bend in a first direction toward a first resonant structure, and the other of the two deflectors can be charged to make the beam bend in a second direction towards a second resonant structure.
  • Energizing neither of the two deflectors 160 allows the beam 130 to be directed to yet a third of the resonant structures.
  • Deflector plates are known in the art and include, but are not limited to, charged plates to which a voltage differential can be applied and deflectors as are used in cathode-ray tube (CRT) displays.
  • FIG. 6A illustrates a single beam 130 interacting with three resonant structures
  • a larger or smaller number of resonant structures can be utilized in the multi-wavelength element 100 M.
  • utilizing only two resonant structures 110 G and 110 B ensures that the beam does not pass over or through a resonant structure as it would when bending toward 110 R if the beam 130 were left on.
  • the beam 130 is turned off while the deflector(s) is/are charged to provide the desired deflection and then the beam 130 is turned back on again.
  • the multi-wavelength structure 100 M of FIG. 6A is modified to utilize a single deflector 160 with sides that can be individually energized such that the beam 130 can be deflected toward the appropriate resonant structure.
  • the multi-wavelength element 100 M of FIG. 6C also includes (as can any embodiment described herein) a series of focusing charged particle optical elements 600 in front of the resonant structures 110 R, 110 G and 110 B.
  • the multi-wavelength structure 100 M of FIG. 6A is modified to utilize additional deflectors 160 at various points along the path of the beam 130 . Additionally, the structure of FIG. 6D has been altered to utilize a beam that passes over, rather than next to, the resonant structures 110 R, 110 G and 110 B.
  • a set of at least two deflectors 160 a,b may be utilized in series.
  • Each of the deflectors includes a deflection control terminal 165 for controlling whether it should aid in the deflection of the beam 130 .
  • the beam 130 is not deflected, and the resonant structure 110 B is excited.
  • the beam 130 is deflected towards and excites resonant structure 110 G.
  • both of the deflectors 160 a,b are energized, then the beam 130 is deflected towards and excites resonant structure 110 R.
  • the number of resonant structures could be increased by providing greater amounts of beam deflection, either by adding additional deflectors 160 or by providing variable amounts of deflection under the control of the deflection control terminal 165 .
  • Directors 160 can include any one or a combination of a deflector 160 , a diffractor, and an optical structure (e.g., switch) that generates the necessary fields.
  • FIGS. 8 , 9 and 10 illustrate a variety of finger lengths, spacings and heights to illustrate that a variety of EMR 150 frequencies can be selectively produced according to this embodiment as well.
  • the resonant structures of FIGS. 8-10 can be modified to utilize a single source 190 which includes a deflector therein.
  • the deflectors 160 can be separate from the charged particle source 140 as well without departing from the present invention.
  • fingers of different spacings and potentially different lengths and heights are provided in close proximity to each other.
  • the beam 130 is allowed to pass out of the source 190 undeflected.
  • the beam 130 is deflected after being generated in the source 190 . (The third resonant structure for the third wavelength element has been omitted for clarity.)
  • wavelength elements 200 RG that include plural resonant structures in series (e.g., with multiple finger spacings and one or more finger lengths and finger heights per element). In such a configuration, one may obtain a mix of wavelengths if this is desired.
  • At least two resonant structures in series can either be the same type of resonant structure (e.g., all of the type shown in FIG. 2A ) or may be of different types (e.g., in an exemplary embodiment with three resonant structures, at least one of FIG. 2A , at least one of FIG. 2C , at least one of FIG. 2H , but none of the others).
  • a single charged particle beam 130 may excite two resonant structures 110 R and 110 G in parallel.
  • the wavelengths need not correspond to red and green but may instead be any wavelength pairing utilizing the structure of FIG. 13 .
  • the intensity of emissions from resonant structures can be varied using a variety of techniques.
  • the charged particle density making up the beam 130 can be varied to increase or decrease intensity, as needed.
  • the speed that the charged particles pass next to or over the resonant structures can be varied to alter intensity as well.
  • the intensity of the emission from the resonant structure is increased.
  • the intensity of the emission from the resonant structure is decreased.
  • the beam 130 can be positioned at three different distances away from the resonant structures 110 .
  • at least three different intensities are possible for the green resonant structure, and similar intensities would be available for the red and green resonant structures.
  • a much larger number of positions (and corresponding intensities) would be used. For example, by specifying an 8-bit color component, one of 256 different positions would be selected for the position of the beam 130 when in proximity to the resonant structure of that color.
  • the deflectors are preferably controlled by a translation table or circuit that converts the desired intensity to a deflection voltage (either linearly or non-linearly).
  • the structure of FIG. 13 may be supplemented with at least one deflector 160 which temporarily positions the beam 130 closer to one of the two structures 110 R and 110 G as desired.
  • the intensity of the emitted electromagnetic radiation from resonant structure 110 R is increased and the intensity of the emitted electromagnetic radiation from resonant structure 110 G is decreased.
  • the intensity of the emitted electromagnetic radiation from resonant structure 110 R can be decreased and the intensity of the emitted electromagnetic radiation from resonant structure 110 G can be increased by modifying the path of the beam 130 to become closer to the resonant structures 110 G and farther away from the resonant structure 110 R.
  • a multi-resonant structure utilizing beam deflection can act as a color channel mixer.
  • a multi-intensity pixel can be produced by providing plural resonant structures, each emitting the same dominant frequency, but with different intensities (e.g., based on different numbers of fingers per structure). As illustrated, the color component is capable of providing five different intensities ⁇ off, 25%, 50%, 75% and 100%). Such a structure could be incorporated into a device having multiple multi-intensity elements 100 per color or wavelength.
  • the illustrated order of the resonant structures is not required and may be altered.
  • the most frequently used intensities may be placed such that they require lower amounts of deflection, thereby enabling the system to utilize, on average, less power for the deflection.
  • the intensity can also be controlled using deflectors 160 that are inline with the fingers 115 and which repel the beam 130 .
  • the beam 130 will reduce its interactions with later fingers 115 (i.e., fingers to the right in the figure).
  • the beam can produce six different intensities ⁇ off, 20%, 40%, 60%, 80% and 100% ⁇ by turning the beam on and off and only using four deflectors, but in practice the number of deflectors can be significantly higher.
  • a number of deflectors 160 can be used to attract the beam away from its undeflected path in order to change intensity as well.
  • At least one additional repulsive deflector 160 r or at least one additional attractive deflector 160 a can be used to direct the beam 130 away from a resonant structure 110 , as shown in FIGS. 17C and 17D , respectively.
  • the resonant structure 110 can be turned on and off, not just controlled in intensity, without having to turn off the source 140 .
  • the source 140 need not include a separate data input 145 . Instead, the data input is simply integrated into the deflection control terminal 165 which controls the amount of deflection that the beam is to undergo, and the beam 130 is left on.
  • FIGS. 17C and 17D illustrate that the beam 130 can be deflected by one deflector 160 a,r before reaching the resonant structure 110
  • multiple deflectors may be used, either serially or in parallel.
  • deflector plates may be provided on both sides of the path of the charged particle beam 130 such that the beam 130 is cooperatively repelled and attracted simultaneously to turn off the resonant structure 110 , or the deflector plates are turned off so that the beam 130 can, at least initially, be directed undeflected toward the resonant structure 110 .
  • the resonant structure 110 can be either a vertical structure such that the beam 130 passes over the resonant structure 110 or a horizontal structure such that the beam 130 passes next to the resonant structure 110 .
  • the “off” state can be achieved by deflecting the beam 130 above the resonant structure 110 but at a height higher than can excite the resonant structure.
  • the “off” state can be achieved by deflecting the beam 130 next to the resonant structure 110 but at a distance greater than can excite the resonant structure.
  • both the vertical and horizontal resonant structures can be turned “off” by deflecting the beam away from resonant structures in a direction other than the undeflected direction.
  • the resonant structure in the vertical configuration, can be turned off by deflecting the beam left or right so that it no longer passes over top of the resonant structure.
  • the off-state may be selected to be any one of: a deflection between 110 B and 110 G, a deflection between 110 B and 110 R, a deflection to the right of 110 B, and a deflection to the left of 110 R.
  • a horizontal resonant structure may be turned off by passing the beam next to the structure but higher than the height of the fingers such that the resonant structure is not excited.
  • the deflectors may utilize a combination of horizontal and vertical deflections such that the intensity is controlled by deflecting the beam in a first direction but the on/off state is controlled by deflecting the beam in a second direction.
  • FIG. 18A illustrates yet another possible embodiment of a varying intensity resonant structure.
  • the change in heights of the fingers have been over exaggerated for illustrative purposes).
  • a beam 130 is not deflected and interacts with a few fingers to produce a first low intensity output.
  • at least one deflector (not shown) internal to or above the source 190 increases the amount of deflection that the beam undergoes, the beam interacts with an increasing number of fingers and results in a higher intensity output.
  • a number of deflectors can be placed along a path of the beam 130 to push the beam down towards as many additional segments as needed for the specified intensity.
  • deflectors 160 have been illustrated in FIGS. 17A-18B as being above the resonant structures when the beam 130 passes over the structures, it should be understood that in embodiments where the beam 130 passes next to the structures, the deflectors can instead be next to the resonant structures.
  • FIG. 19A illustrates an additional possible embodiment of a varying intensity resonant structure according to the present invention.
  • segments shaped as arcs are provided with varying lengths but with a fixed spacing between arcs such that a desired frequency is emitted.
  • the number of segments has been greatly reduced. In practice, the number of segments would be significantly greater, e.g., utilizing hundreds of segments.
  • the intensity changes with the angle of deflection as well. For example, a deflection angle of zero excites 100% of the segments. However, at half the maximum angle 50% of the segments are excited. At the maximum angle, the minimum number of segments are excited.
  • FIG. 19B provides an alternate structure to the structure of FIG. 19A but where a deflection angle of zero excites the minimum number of segments and at the maximum angle, the maximum number of segments are excited.
  • the resonant structures may be utilized to produce a desired wavelength by selecting the appropriate parameters (e.g., beam velocity, finger length, finger period, finger height, duty cycle of finger period, etc.). Moreover, while the above was discussed with respect to three-wavelengths per element, any number (n) of wavelengths can be utilized per element.
  • the emissions produced by the resonant structures 110 can additionally be directed in a desired direction or otherwise altered using any one or a combination of: mirrors, lenses and filters.
  • the resonant structures (e.g., 110 R, 110 G and 110 B) are processed onto a substrate 105 ( FIG. 3 ) (such as a semiconductor substrate or a circuit board) and can provide a large number of rows in a real estate area commensurate in size with an electrical pad (e.g., a copper pad).
  • a substrate 105 such as a semiconductor substrate or a circuit board
  • an electrical pad e.g., a copper pad
  • the resonant structures discussed above may be used for actual visible light production at variable frequencies. Such applications include any light producing application where incandescent, fluorescent, halogen, semiconductor, or other light-producing device is employed. By putting a number of resonant structures of varying geometries onto the same substrate 105 , light of virtually any frequency can be realized by aiming an electron beam at selected ones of the rows.
  • FIG. 20 shows a series of resonant posts that have been fabricated to act as segments in a test structure. As can be seen, segments can be fabricated having various dimensions.
  • each resonant structure emits electromagnetic radiation having a single frequency.
  • the resonant structures each emit EMR at a dominant frequency and at least one “noise” or undesired frequency.
  • an element 100 can be created that is applicable to the desired application or field of use.
  • red, green and blue resonant structures 110 R, 110 G and 100 B were known to emit (1) 10% green and 10% blue, (2) 10% red and 10% blue and (3) 10% red and 10% green, respectively, then a grey output at a selected level (levels) could be achieved by requesting each resonant structure output level s /(1+0.1+0.1) or level s /1.2.
  • plural resonant structures can be concatenated in series and driven by the same source 140 of charged particles.
  • the source 140 emits a beam 130 of charged particles.
  • the deflectors 160 1 are not energized, and the beam 130 is allowed to pass the resonant structure 110 1 undeflected. Since the beam 130 is undeflected, the recentering deflectors 166 1 need not be energized either using their control terminals 167 1 .
  • the deflectors 160 1 are energized using deflection control terminal 165 1 , and the beam 130 is deflected away from the resonant structure 110 1 . Since it is deflected, the beam 130 must be recentered while approaching the resonant structure 110 2 .
  • the recentering is performed using at least one recentering deflector 166 1 which is controlled using its corresponding control terminal 167 1 .
  • the process is then repeated for the resonant structure 110 2 which is turned on or off by at least one deflector 160 2 using its corresponding at least one deflection control terminal 165 2 .
  • the process is repeated for as many resonant structures 110 as are arranged in series. In this way, the state (i.e., off, partially on, or fully on) of each resonant structure 110 1 can be controlled by an amount of deflection produced by its corresponding deflector 160 i , allowing the beam 130 to remain on and still selectively excite plural resonant structures using only a single beam 130 .
  • a focusing element 185 can be included such that the beam 130 is focused before passing through or while within the deflection range of the deflector(s) 165 2 of the adjacent resonant structure 110 2 .
  • a set of resonant structures in series can be arranged in a “normally off” configuration as well.
  • the at least one deflector 160 1 is energized, and the beam 130 is deflected sufficiently to excite at least a portion of the resonant structure 110 1 , depending on the intensity at which the resonant structure 110 1 is to emit. Since the beam 130 is deflected, at least one recentering deflector 166 1 must also be energized using its control terminals 167 1 .
  • the deflectors 160 1 are not energized using deflection control terminal 165 1 , and the beam 130 is left undeflected and does not excite the resonant structure 110 1 . Since it is undeflected, the beam 130 need not be recentered using recentering deflector 166 1 while approaching the resonant structure 110 2 . However, in a configuration including a focusing element 185 (as in FIG. 21B ), the beam 130 may pass through the focusing element 185 , whether or not the beam is deflected.
  • FIG. 22A shows a high-level image of a series of resonant structures, such as the resonant structures of FIG. 21A (but with control terminals removed to aid clarity).
  • Each deflector 160 i , resonant structure 110 i and recentering deflector 166 i can be thought of as a resonant group 2200 i , and FIG. 22A separately identifies five such resonant groups ( 2200 1 , 2200 2 , 2200 n-2 , 2200 n-1 and 2200 n ).
  • FIG. 22A also illustrates a special resonant group 2210 3 which includes a special recentering deflector 166 s1 that bends the beam 130 from a first direction to a second direction.
  • the illustrated embodiment also includes a second special recentering deflector 166 s2 that bends the beam 130 from the second direction to a third direction (illustrated as opposite the first direction).
  • the same beam 130 then passes additional resonant structures (of which only three are illustrated). It is to be understood that “n” resonant structures can be excited from the same beam 130 , where n is greater than or equal to 1.
  • FIG. 22B illustrates that a U-shaped pattern allows at least one additional resonant group 2200 m to be connected in series. That additional resonant group 2200 m includes a resonant structure 110 m that is oriented in a direction different than the directions of FIG. 22A . As illustrated, the orientation of the resonant structure 110 m could be turned ninety degrees compared to the resonant structures 110 1 - 110 3 and 110 n-2 - 110 n of FIG. 22A .
  • the path of the beam can also be made circular or oval by using special resonant groups 2210 .
  • a matrix of elements can be created from a single source 140 using a mixture of resonant groups (e.g., 2200 1,1 and 2200 1,2 ) and special resonant groups (e.g., 2210 4,1 ).
  • a matrix can be used is a display such as a computer monitor or a television screen.
  • FIG. 23 illustrates that the same technique that has been described above with respect to arranging a set of resonant groups (having a single resonant structure per group) in series is also applicable to multi-color elements with plural frequencies per element.
  • a first set of red, green and blue resonant groups ( 2310 R, 2310 G, and 2310 B) and their intensities (if any) are selected using a deflector 160 .
  • the resonant groups further include a recentering deflector (not shown) which directs the beam back towards a special deflector 2360 which can compensate for the amount of deflection that the beam underwent before arriving at the deflector 2360 .
  • This enables the beam 130 to be recentered (and optionally refocused) before or while being passed on to an adjacent set of resonant structures (either single-frequency or multi-frequency).
  • the locations and order of the colors can be laid out such that the most common series of colors requires the least amount of deflection. This reduces the energy consumption required to achieve the most common color arrangement. For example, as shown in FIG. 23 , an all-green series of emitters requires the least amount of deflection and therefore energy.
  • the structures of the present invention may include a multi-pin structure.
  • two pins are used where the voltage between them is indicative of what frequency band, if any, should be emitted, but at a common intensity.
  • the frequency is selected on one pair of pins and the intensity is selected on another pair of pins (potentially sharing a common ground pin with the first pair).
  • commands may be sent to the device (1) to turn the transmission of EMR on and off, (2) to set the frequency to be emitted and/or (3) to set the intensity of the EMR to be emitted.
  • a controller (not shown) receives the corresponding voltage(s) or commands on the pins and controls the director to select the appropriate resonant structure and optionally to produce the requested intensity.

Abstract

When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.

Description

    CROSS-REFERENCE TO CO-PENDING APPLICATIONS
  • The present invention is a continuation of U.S. patent application Ser. No. 11/325,534, filed Jan. 5, 2006, entitled “Switching Micro-Resonant Structures Using at Least One Director,” and is related to the following U.S. patent applications: (1) U.S. patent application Ser. No. 11/238,991, filed Sep. 30, 2005, entitled “Ultra-Small Resonating Charged Particle Beam Modulator;” (2) U.S. patent application Ser. No. 10/917,511, filed on Aug. 13, 2004, entitled “Patterning Thin Metal Film by Dry Reactive Ion Etching,” (3) U.S. application Ser. No. 11/203,407, filed on Aug. 15, 2005, entitled “Method Of Patterning Ultra-Small Structures,” (4) U.S. application Ser. No. 11/243,476, filed on Oct. 5, 2005, entitled “Structures And Methods For Coupling Energy From An Electromagnetic Wave,” which is now U.S. Pat. No. 7,253,426, (5) U.S. application Ser. No. 11/243,477, filed on Oct. 5, 2005, entitled “Electron beam induced resonance,” (6) U.S. application Ser. No. 11/325,432, entitled “Resonant Structure-Based Display,” filed on Jan. 5, 2006; (7) U.S. application Ser. No. 11/325,571, entitled “Switching Micro-Resonant Structures By Modulating A Beam Of Charged Particles,” filed on Jan. 5, 2006; and (8) U.S. application Ser. No. 11/325,448, entitled “Selectable Frequency Light Emitter,” filed on Jan. 5, 2006, which are all commonly owned with the present application, the entire contents of each of which are incorporated herein by reference.
  • FIELD OF INVENTION
  • This relates to the production of electromagnetic radiation (EMR) at selected frequencies and to the coupling of high frequency electromagnetic radiation to elements on a chip or a circuit board.
  • In the above-identified patent applications, the design and construction methods for ultra-small structures for producing electromagnetic radiation are disclosed. When using micro-resonant structures, it is possible to use the same source of charged particles to cause multiple resonant structures to emit electromagnetic radiation. This reduces the number of sources that are required for multi-element configurations, such as displays with plural rows (or columns) of pixels.
  • In one such embodiment, at least one deflector is placed in between first and second resonant structures. After the beam passes by the first resonant structure, it is directed to a center path corresponding to the second resonant structure. The amount of deflection needed to direct the beam to the center path is based on the amount of deflection, if any, that the beam underwent as it passed by the first resonant structure. This process can be repeated in series as necessary to produce a set of resonant structures in series.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The following description, given with respect to the attached drawings, may be better understood with reference to the non-limiting examples of the drawings, wherein:
  • FIG. 1 is a generalized block diagram of a generalized resonant structure and its charged particle source;
  • FIG. 2A is a top view of a non-limiting exemplary resonant structure for use with the present invention;
  • FIG. 2B is a top view of the exemplary resonant structure of FIG. 2A with the addition of a backbone;
  • FIGS. 2C-2H are top views of other exemplary resonant structures for use with the present invention;
  • FIG. 3 is a top view of a single color element having a first period and a first “finger” length according to one embodiment of the present invention;
  • FIG. 4 is a top view of a single color element having a second period and a second “finger” length according to one embodiment of the present invention;
  • FIG. 5 is a top view of a single color element having a third period and a third “finger” length according to one embodiment of the present invention;
  • FIG. 6A is a top view of a multi-color element utilizing two deflectors according to one embodiment of the present invention;
  • FIG. 6B is a top view of a multi-color element utilizing a single, integrated deflector according to one embodiment of the present invention;
  • FIG. 6C is a top view of a multi-color element utilizing a single, integrated deflector and focusing optics according to one embodiment of the present invention;
  • FIG. 6D is a top view of a multi-color element utilizing plural deflectors along various points in the path of the beam according to one embodiment of the present invention;
  • FIG. 7 is a top view of a multi-color element utilizing two serial deflectors according to one embodiment of the present invention;
  • FIG. 8 is a perspective view of a single wavelength element having a first period and a first resonant frequency or “finger” length according to one embodiment of the present invention;
  • FIG. 9 is a perspective view of a single wavelength element having a second period and a second “finger” length according to one embodiment of the present invention;
  • FIG. 10 is a perspective view of a single wavelength element having a third period and a third “finger” length according to one embodiment of the present invention;
  • FIG. 11 is a perspective view of a portion of a multi-wavelength element having wavelength elements with different periods and “finger” lengths;
  • FIG. 12 is a top view of a multi-wavelength element according to one embodiment of the present invention;
  • FIG. 13 is a top view of a multi-wavelength element according to another embodiment of the present invention;
  • FIG. 14 is a top view of a multi-wavelength element utilizing two deflectors with variable amounts of deflection according to one embodiment of the present invention;
  • FIG. 15 is a top view of a multi-wavelength element utilizing two deflectors according to another embodiment of the present invention;
  • FIG. 16 is a top view of a multi-intensity element utilizing two deflectors according to another embodiment of the present invention;
  • FIG. 17A is a top view of a multi-intensity element using plural inline deflectors;
  • FIG. 17B is a top view of a multi-intensity element using plural attractive deflectors above the path of the beam;
  • FIG. 17C is a view of a first deflectable beam for turning the resonant structures on and off without needing a separate data input on the source of charged particles and without having to turn off the source of charged particles;
  • FIG. 17D is a view of a second deflectable beam for turning the resonant structures on and off without needing a separate data input on the source of charged particles and without having to turn off the source of charged particles;
  • FIG. 18A is a top view of a multi-intensity element using finger of varying heights;
  • FIG. 18B is a top view of a multi-intensity element using finger of varying heights;
  • FIG. 19A is a top view of a fan-shaped resonant element that enables varying intensity based on the amount of deflection of the beam;
  • FIG. 19B is a top view of another fan-shaped resonant element that enables varying intensity based on the amount of deflection of the beam; and
  • FIG. 20 is a microscopic photograph of a series of resonant segments;
  • FIG. 21A is a high-level block diagram of a set of “normally on” resonant structures in series which are all excited by the same source of charged particles;
  • FIG. 21B is a high-level block diagram of a set of “normally on” resonant structures in series which are all excited by the same source of charged particles after undergoing refocusing by at least one focusing element between resonant structures;
  • FIG. 21C is a high-level block diagram of a set of “normally off” resonant structures in series which are all excited by the same source of charged particles;
  • FIG. 22A is a high-level block diagram of a series of resonant structures laid out in rows in which the direction of the beam is reversed;
  • FIG. 22B is a high-level block diagram of a series of resonant structures laid out in a U-shaped pattern in which the direction of the beam is changed at least twice;
  • FIGS. 22C-22D are high-level diagrams of additional shapes of paths that a beam can take when exciting plural resonant structures; and
  • FIG. 23 is a high-level diagram of a series of multi-color resonant structures which are driven by the same source.
  • DISCUSSION OF THE PREFERRED EMBODIMENTS
  • Turning to FIG. 1, according to the present invention, a wavelength element 100 on a substrate 105 (such as a semiconductor substrate or a circuit board) can be produced from at least one resonant structure 110 that emits light (such as infrared light, visible light or ultraviolet light or any other electromagnetic radiation (EMR) 150 at a wide range of frequencies, and often at a frequency higher than that of microwave). The EMR 150 is emitted when the resonant structure 110 is exposed to a beam 130 of charged particles ejected from or emitted by a source of charged particles 140. The source 140 is controlled by applying a signal on data input 145. The source 140 can be any desired source of charged particles such as an electron gun, a cathode, an ion source, an electron source from a scanning electron microscope, etc.
  • Exemplary resonant structures are illustrated in FIGS. 2A-2H. As shown in FIG. 2A, a resonant structure 110 may comprise a series of fingers 115 which are separated by a spacing 120 measured as the beginning of one finger 115 to the beginning of an adjacent finger 115. The finger 115 has a thickness that takes up a portion of the spacing between fingers 115. The fingers also have a length 125 and a height (not shown). As illustrated, the fingers of FIG. 2A are perpendicular to the beam 130.
  • Resonant structures 110 are fabricated from resonating material (e.g., from a conductor such as metal (e.g., silver, gold, aluminum and platinum or from an alloy) or from any other material that resonates in the presence of a charged particle beam). Other exemplary resonating materials include carbon nanotubes and high temperature superconductors.
  • When creating any of the elements 100 according to the present invention, the various resonant structures can be constructed in multiple layers of resonating materials but are preferably constructed in a single layer of resonating material (as described above).
  • In one single layer embodiment, all the resonant structures 110 of a resonant element 100 are etched or otherwise shaped in the same processing step. In one multi-layer embodiment, the resonant structures 110 of each resonant frequency are etched or otherwise shaped in the same processing step. In yet another multi-layer embodiment, all resonant structures having segments of the same height are etched or otherwise shaped in the same processing step. In yet another embodiment, all of the resonant elements 100 on a substrate 105 are etched or otherwise shaped in the same processing step.
  • The material need not even be a contiguous layer, but can be a series of resonant elements individually present on a substrate. The materials making up the resonant elements can be produced by a variety of methods, such as by pulsed-plating, depositing, sputtering or etching. Preferred methods for doing so are described in co-pending U.S. application Ser. No. 10/917,571, filed on Aug. 13, 2004, entitled “Patterning Thin Metal Film by Dry Reactive Ion Etching,” and in U.S. application Ser. No. 11/203,407, filed on Aug. 15, 2005, entitled “Method Of Patterning Ultra-Small Structures,” both of which are commonly owned at the time of filing, and the entire contents of each of which are incorporated herein by reference.
  • At least in the case of silver, etching does not need to remove the material between segments or posts all the way down to the substrate level, nor does the plating have to place the posts directly on the substrate. Silver posts can be on a silver layer on top of the substrate. In fact, we discovered that, due to various coupling effects, better results are obtained when the silver posts are set on a silver layer, which itself is on the substrate.
  • As shown in FIG. 2B, the fingers of the resonant structure 110 can be supplemented with a backbone. The backbone 112 connects the various fingers 115 of the resonant structure 110 forming a comb-like shape on its side. Typically, the backbone 112 would be made of the same material as the rest of the resonant structure 110, but alternate materials may be used. In addition, the backbone 112 may be formed in the same layer or a different layer than the fingers 110. The backbone 112 may also be formed in the same processing step or in a different processing step than the fingers 110. While the remaining figures do not show the use of a backbone 112, it should be appreciated that all other resonant structures described herein can be fabricated with a backbone also.
  • The shape of the fingers 115R (or posts) may also be shapes other than rectangles, such as simple shapes (e.g., circles, ovals, arcs and squares), complex shapes (e.g., such as semi-circles, angled fingers, serpentine structures and embedded structures (i.e., structures with a smaller geometry within a larger geometry, thereby creating more complex resonances)) and those including waveguides or complex cavities. The finger structures of all the various shapes will be collectively referred to herein as “segments.” Other exemplary shapes are shown in FIGS. 2C-2H, again with respect to a path of a beam 130. As can be seen at least from FIG. 2C, the axis of symmetry of the segments need not be perpendicular to the path of the beam 130.
  • Turning now to specific exemplary resonant elements, in FIG. 3, a wavelength element 100R for producing electromagnetic radiation with a first frequency is shown as having been constructed on a substrate 105. (The illustrated embodiments of FIGS. 3, 4 and 5 are described as producing red, green and blue light in the visible spectrum, respectively. However, the spacings and lengths of the fingers 115R, 115G and 115B of the resonant structures 110R, 110G and 110B, respectively, are for illustrative purposes only and not intended to represent any actual relationship between the period 120 of the fingers, the lengths of the fingers 115 and the frequency of the emitted electromagnetic radiation.) However, the dimensions of exemplary resonant structures are provided in the table below.
  • # of
    Period Segment fingers
    Wavelength
    120 thickness Height 155 Length 125 in a row
    Red 220 nm 110 nm  250-400 nm 100-140 nm 200-300
    Green 171 nm 85 nm 250-400 nm 180 nm 200-300
    Blue 158 nm 78 nm 250-400 nm 60-120 nm 200-300
  • As dimensions (e.g., height and/or length) change the intensity of the radiation may change as well. Moreover, depending on the dimensions, harmonics (e.g., second and third harmonics) may occur. For post height, length, and width, intensity appears oscillatory in that finding the optimal peak of each mode created the highest output. When operating in the velocity dependent mode (where the finger period depicts the dominant output radiation) the alignment of the geometric modes of the fingers are used to increase the output intensity. However it is seen that there are also radiation components due to geometric mode excitation during this time, but they do not appear to dominate the output. Optimal overall output comes when there is constructive modal alignment in as many axes as possible.
  • Other dimensions of the posts and cavities can also be swept to improve the intensity. A sweep of the duty cycle of the cavity space width and the post thickness indicates that the cavity space width and period (i.e., the sum of the width of one cavity space width and one post) have relevance to the center frequency of the resultant radiation. That is, the center frequency of resonance is generally determined by the post/space period. By sweeping the geometries, at given electron velocity v and current density, while evaluating the characteristic harmonics during each sweep, one can ascertain a predictable design model and equation set for a particular metal layer type and construction. Each of the dimensions mentioned about can be any value in the nanostructure range, i.e., 1 nm to 1 μm. Within such parameters, a series of posts can be constructed that output substantial EMR in the infrared, visible and ultraviolet portions of the spectrum and which can be optimized based on alterations of the geometry, electron velocity and density, and metal/layer type. It should also be possible to generate EMR of longer wavelengths as well. Unlike a Smith-Purcell device, the resultant radiation from such a structure is intense enough to be visible to the human eye with only 30 nanoamperes of current.
  • Using the above-described sweeps, one can also find the point of maximum intensity for given posts. Additional options also exist to widen the bandwidth or even have multiple frequency points on a single device. Such options include irregularly shaped posts and spacing, series arrays of non-uniform periods, asymmetrical post orientation, multiple beam configurations, etc.
  • As shown in FIG. 3, a beam 130 of charged particles (e.g., electrons, or positively or negatively charged ions) is emitted from a source 140 of charged particles under the control of a data input 145. The beam 130 passes close enough to the resonant structure 110R to excite a response from the fingers and their associated cavities (or spaces). The source 140 is turned on when an input signal is received that indicates that the resonant structure 110R is to be excited. When the input signal indicates that the resonant structure 110R is not to be excited, the source 140 is turned off.
  • The illustrated EMR 150 is intended to denote that, in response to the data input 145 turning on the source 140, a red wavelength is emitted from the resonant structure 110R. In the illustrated embodiment, the beam 130 passes next to the resonant structure 110R which is shaped like a series of rectangular fingers 115R or posts.
  • The resonant structure 110R is fabricated utilizing any one of a variety of techniques (e.g., semiconductor processing-style techniques such as reactive ion etching, wet etching and pulsed plating) that produce small shaped features.
  • In response to the beam 130, electromagnetic radiation 150 is emitted there from which can be directed to an exterior of the element 110.
  • As shown in FIG. 4, a green element 100G includes a second source 140 providing a second beam 130 in close proximity to a resonant structure 110G having a set of fingers 115G with a spacing 120G, a finger length 125G and a finger height 155G (see FIG. 9) which may be different than the spacing 120R, finger length 125G and finger height 155R of the resonant structure 110R. The finger length 125, finger spacing 120 and finger height 155 may be varied during design time to determine optimal finger lengths 125, finger spacings 120 and finger heights 155 to be used in the desired application.
  • As shown in FIG. 5, a blue element 100B includes a third source 140 providing a third beam 130 in close proximity to a resonant structure 110B having a set of fingers 115B having a spacing 120B, a finger length 125B and a finger height 155B (see FIG. 10) which may be different than the spacing 120R, length 125R and height 155R of the resonant structure 110R and which may be different than the spacing 120G, length 125G and height 155G of the resonant structure 110G.
  • The cathode sources of electron beams, as one example of the charged particle beam, are usually best constructed off of the chip or board onto which the conducting structures are constructed. In such a case, we incorporate an off-site cathode with a deflector, diffractor, or switch to direct one or more electron beams to one or more selected rows of the resonant structures. The result is that the same conductive layer can produce multiple light (or other EMR) frequencies by selectively inducing resonance in one of plural resonant structures that exist on the same substrate 105.
  • In an embodiment shown in FIG. 6A, an element is produced such that plural wavelengths can be produced from a single beam 130. In the embodiment of FIG. 6A, two deflectors 160 are provided which can direct the beam towards a desired resonant structure 110G, 110B or 110R by providing a deflection control voltage on a deflection control terminal 165. One of the two deflectors 160 is charged to make the beam bend in a first direction toward a first resonant structure, and the other of the two deflectors can be charged to make the beam bend in a second direction towards a second resonant structure. Energizing neither of the two deflectors 160 allows the beam 130 to be directed to yet a third of the resonant structures. Deflector plates are known in the art and include, but are not limited to, charged plates to which a voltage differential can be applied and deflectors as are used in cathode-ray tube (CRT) displays.
  • While FIG. 6A illustrates a single beam 130 interacting with three resonant structures, in alternate embodiments a larger or smaller number of resonant structures can be utilized in the multi-wavelength element 100M. For example, utilizing only two resonant structures 110G and 110B ensures that the beam does not pass over or through a resonant structure as it would when bending toward 110R if the beam 130 were left on. However, in one embodiment, the beam 130 is turned off while the deflector(s) is/are charged to provide the desired deflection and then the beam 130 is turned back on again.
  • In yet another embodiment illustrated in FIG. 6B, the multi-wavelength structure 100M of FIG. 6A is modified to utilize a single deflector 160 with sides that can be individually energized such that the beam 130 can be deflected toward the appropriate resonant structure. The multi-wavelength element 100M of FIG. 6C also includes (as can any embodiment described herein) a series of focusing charged particle optical elements 600 in front of the resonant structures 110R, 110G and 110B.
  • In yet another embodiment illustrated in FIG. 6D, the multi-wavelength structure 100M of FIG. 6A is modified to utilize additional deflectors 160 at various points along the path of the beam 130. Additionally, the structure of FIG. 6D has been altered to utilize a beam that passes over, rather than next to, the resonant structures 110R, 110G and 110B.
  • Alternatively, as shown in FIG. 7, rather than utilize parallel deflectors (e.g., as in FIG. 6A), a set of at least two deflectors 160 a,b may be utilized in series. Each of the deflectors includes a deflection control terminal 165 for controlling whether it should aid in the deflection of the beam 130. For example, with neither of deflectors 160 a,b energized, the beam 130 is not deflected, and the resonant structure 110B is excited. When one of the deflectors 160 a,b is energized but not the other, then the beam 130 is deflected towards and excites resonant structure 110G. When both of the deflectors 160 a,b are energized, then the beam 130 is deflected towards and excites resonant structure 110R. The number of resonant structures could be increased by providing greater amounts of beam deflection, either by adding additional deflectors 160 or by providing variable amounts of deflection under the control of the deflection control terminal 165.
  • Alternatively, “directors” other than the deflectors 160 can be used to direct/deflect the electron beam 130 emitted from the source 140 toward any one of the resonant structures 110 discussed herein. Directors 160 can include any one or a combination of a deflector 160, a diffractor, and an optical structure (e.g., switch) that generates the necessary fields.
  • While many of the above embodiments have been discussed with respect to resonant structures having beams 130 passing next to them, such a configuration is not required. Instead, the beam 130 from the source 140 may be passed over top of the resonant structures. FIGS. 8, 9 and 10 illustrate a variety of finger lengths, spacings and heights to illustrate that a variety of EMR 150 frequencies can be selectively produced according to this embodiment as well.
  • Furthermore, as shown in FIG. 11, the resonant structures of FIGS. 8-10 can be modified to utilize a single source 190 which includes a deflector therein. However, as with the embodiments of FIGS. 6A-7, the deflectors 160 can be separate from the charged particle source 140 as well without departing from the present invention. As shown in FIG. 11, fingers of different spacings and potentially different lengths and heights are provided in close proximity to each other. To activate the resonant structure 110R, the beam 130 is allowed to pass out of the source 190 undeflected. To activate the resonant structure 110B, the beam 130 is deflected after being generated in the source 190. (The third resonant structure for the third wavelength element has been omitted for clarity.)
  • While the above elements have been described with reference to resonant structures 110 that have a single resonant structure along any beam trajectory, as shown in FIG. 12, it is possible to utilize wavelength elements 200RG that include plural resonant structures in series (e.g., with multiple finger spacings and one or more finger lengths and finger heights per element). In such a configuration, one may obtain a mix of wavelengths if this is desired. At least two resonant structures in series can either be the same type of resonant structure (e.g., all of the type shown in FIG. 2A) or may be of different types (e.g., in an exemplary embodiment with three resonant structures, at least one of FIG. 2A, at least one of FIG. 2C, at least one of FIG. 2H, but none of the others).
  • Alternatively, as shown in FIG. 13, a single charged particle beam 130 (e.g., electron beam) may excite two resonant structures 110R and 110G in parallel. As would be appreciated by one of ordinary skill from this disclosure, the wavelengths need not correspond to red and green but may instead be any wavelength pairing utilizing the structure of FIG. 13.
  • It is possible to alter the intensity of emissions from resonant structures using a variety of techniques. For example, the charged particle density making up the beam 130 can be varied to increase or decrease intensity, as needed. Moreover, the speed that the charged particles pass next to or over the resonant structures can be varied to alter intensity as well.
  • Alternatively, by decreasing the distance between the beam 130 and a resonant structure (without hitting the resonant structure), the intensity of the emission from the resonant structure is increased. In the embodiments of FIGS. 3-7, this would be achieved by bringing the beam 130 closer to the side of the resonant structure. For FIGS. 8-10, this would be achieved by lowering the beam 130. Conversely, by increasing the distance between the beam 130 and a resonant structure, the intensity of the emission from the resonant structure is decreased.
  • Turning to the structure of FIG. 14, it is possible to utilize at least one deflector 160 to vary the amount of coupling between the beam 130 and the resonant structures 110. As illustrated, the beam 130 can be positioned at three different distances away from the resonant structures 110. Thus, as illustrated at least three different intensities are possible for the green resonant structure, and similar intensities would be available for the red and green resonant structures. However, in practice a much larger number of positions (and corresponding intensities) would be used. For example, by specifying an 8-bit color component, one of 256 different positions would be selected for the position of the beam 130 when in proximity to the resonant structure of that color. Since the resonant structures for different may have different responses to the proximity of the beam, the deflectors are preferably controlled by a translation table or circuit that converts the desired intensity to a deflection voltage (either linearly or non-linearly).
  • Moreover, as shown in FIG. 15, the structure of FIG. 13 may be supplemented with at least one deflector 160 which temporarily positions the beam 130 closer to one of the two structures 110R and 110G as desired. By modifying the path of the beam 130 to become closer to the resonant structures 110R and farther away from the resonant structure 110G, the intensity of the emitted electromagnetic radiation from resonant structure 110R is increased and the intensity of the emitted electromagnetic radiation from resonant structure 110G is decreased. Likewise, the intensity of the emitted electromagnetic radiation from resonant structure 110R can be decreased and the intensity of the emitted electromagnetic radiation from resonant structure 110G can be increased by modifying the path of the beam 130 to become closer to the resonant structures 110G and farther away from the resonant structure 110R. In this way, a multi-resonant structure utilizing beam deflection can act as a color channel mixer.
  • As shown in FIG. 16, a multi-intensity pixel can be produced by providing plural resonant structures, each emitting the same dominant frequency, but with different intensities (e.g., based on different numbers of fingers per structure). As illustrated, the color component is capable of providing five different intensities {off, 25%, 50%, 75% and 100%). Such a structure could be incorporated into a device having multiple multi-intensity elements 100 per color or wavelength.
  • The illustrated order of the resonant structures is not required and may be altered. For example, the most frequently used intensities may be placed such that they require lower amounts of deflection, thereby enabling the system to utilize, on average, less power for the deflection.
  • As shown in FIG. 17A, the intensity can also be controlled using deflectors 160 that are inline with the fingers 115 and which repel the beam 130. By turning on the deflectors at the various locations, the beam 130 will reduce its interactions with later fingers 115 (i.e., fingers to the right in the figure). Thus, as illustrated, the beam can produce six different intensities {off, 20%, 40%, 60%, 80% and 100%} by turning the beam on and off and only using four deflectors, but in practice the number of deflectors can be significantly higher.
  • Alternatively, as shown in FIG. 17B, a number of deflectors 160 can be used to attract the beam away from its undeflected path in order to change intensity as well.
  • In addition to the repulsive and attractive deflectors 160 of FIGS. 17A and 17B which are used to control intensity of multi-intensity resonators, at least one additional repulsive deflector 160 r or at least one additional attractive deflector 160 a, can be used to direct the beam 130 away from a resonant structure 110, as shown in FIGS. 17C and 17D, respectively. By directing the beam 130 before the resonant structure 110 is excited at all, the resonant structure 110 can be turned on and off, not just controlled in intensity, without having to turn off the source 140. Using this technique, the source 140 need not include a separate data input 145. Instead, the data input is simply integrated into the deflection control terminal 165 which controls the amount of deflection that the beam is to undergo, and the beam 130 is left on.
  • Furthermore, while FIGS. 17C and 17D illustrate that the beam 130 can be deflected by one deflector 160 a,r before reaching the resonant structure 110, it should be understood that multiple deflectors may be used, either serially or in parallel. For example, deflector plates may be provided on both sides of the path of the charged particle beam 130 such that the beam 130 is cooperatively repelled and attracted simultaneously to turn off the resonant structure 110, or the deflector plates are turned off so that the beam 130 can, at least initially, be directed undeflected toward the resonant structure 110.
  • The configuration of FIGS. 17A-D is also intended to be general enough that the resonant structure 110 can be either a vertical structure such that the beam 130 passes over the resonant structure 110 or a horizontal structure such that the beam 130 passes next to the resonant structure 110. In the vertical configuration, the “off” state can be achieved by deflecting the beam 130 above the resonant structure 110 but at a height higher than can excite the resonant structure. In the horizontal configuration, the “off” state can be achieved by deflecting the beam 130 next to the resonant structure 110 but at a distance greater than can excite the resonant structure.
  • Alternatively, both the vertical and horizontal resonant structures can be turned “off” by deflecting the beam away from resonant structures in a direction other than the undeflected direction. For example, in the vertical configuration, the resonant structure can be turned off by deflecting the beam left or right so that it no longer passes over top of the resonant structure. Looking at the exemplary structure of FIG. 7, the off-state may be selected to be any one of: a deflection between 110B and 110G, a deflection between 110B and 110R, a deflection to the right of 110B, and a deflection to the left of 110R. Similarly, a horizontal resonant structure may be turned off by passing the beam next to the structure but higher than the height of the fingers such that the resonant structure is not excited.
  • In yet another embodiment, the deflectors may utilize a combination of horizontal and vertical deflections such that the intensity is controlled by deflecting the beam in a first direction but the on/off state is controlled by deflecting the beam in a second direction.
  • FIG. 18A illustrates yet another possible embodiment of a varying intensity resonant structure. (The change in heights of the fingers have been over exaggerated for illustrative purposes). As shown in FIG. 18A, a beam 130 is not deflected and interacts with a few fingers to produce a first low intensity output. However, as at least one deflector (not shown) internal to or above the source 190 increases the amount of deflection that the beam undergoes, the beam interacts with an increasing number of fingers and results in a higher intensity output.
  • Alternatively, as shown in FIG. 18B, a number of deflectors can be placed along a path of the beam 130 to push the beam down towards as many additional segments as needed for the specified intensity.
  • While deflectors 160 have been illustrated in FIGS. 17A-18B as being above the resonant structures when the beam 130 passes over the structures, it should be understood that in embodiments where the beam 130 passes next to the structures, the deflectors can instead be next to the resonant structures.
  • FIG. 19A illustrates an additional possible embodiment of a varying intensity resonant structure according to the present invention. According to the illustrated embodiment, segments shaped as arcs are provided with varying lengths but with a fixed spacing between arcs such that a desired frequency is emitted. (For illustrative purposes, the number of segments has been greatly reduced. In practice, the number of segments would be significantly greater, e.g., utilizing hundreds of segments.) By varying the lengths, the number of segments that are excited by the deflected beam changes with the angle of deflection. Thus, the intensity changes with the angle of deflection as well. For example, a deflection angle of zero excites 100% of the segments. However, at half the maximum angle 50% of the segments are excited. At the maximum angle, the minimum number of segments are excited. FIG. 19B provides an alternate structure to the structure of FIG. 19A but where a deflection angle of zero excites the minimum number of segments and at the maximum angle, the maximum number of segments are excited
  • While the above has been discussed in terms of elements emitting red, green and blue light, the present invention is not so limited. The resonant structures may be utilized to produce a desired wavelength by selecting the appropriate parameters (e.g., beam velocity, finger length, finger period, finger height, duty cycle of finger period, etc.). Moreover, while the above was discussed with respect to three-wavelengths per element, any number (n) of wavelengths can be utilized per element.
  • As should be appreciated by those of ordinary skill in the art, the emissions produced by the resonant structures 110 can additionally be directed in a desired direction or otherwise altered using any one or a combination of: mirrors, lenses and filters.
  • The resonant structures (e.g., 110R, 110G and 110B) are processed onto a substrate 105 (FIG. 3) (such as a semiconductor substrate or a circuit board) and can provide a large number of rows in a real estate area commensurate in size with an electrical pad (e.g., a copper pad).
  • The resonant structures discussed above may be used for actual visible light production at variable frequencies. Such applications include any light producing application where incandescent, fluorescent, halogen, semiconductor, or other light-producing device is employed. By putting a number of resonant structures of varying geometries onto the same substrate 105, light of virtually any frequency can be realized by aiming an electron beam at selected ones of the rows.
  • FIG. 20 shows a series of resonant posts that have been fabricated to act as segments in a test structure. As can be seen, segments can be fabricated having various dimensions.
  • The above discussion has been provided assuming an idealized set of conditions—i.e., that each resonant structure emits electromagnetic radiation having a single frequency. However, in practice the resonant structures each emit EMR at a dominant frequency and at least one “noise” or undesired frequency. By selecting dimensions of the segments (e.g., by selecting proper spacing between resonant structures and lengths of the structures) such that the intensities of the noise frequencies are kept sufficiently low, an element 100 can be created that is applicable to the desired application or field of use. However, in some applications, it is also possible to factor in the estimate intensity of the noise from the various resonant structures and correct for it when selecting the number of resonant structures of each color to turn on and at what intensity. For example, if red, green and blue resonant structures 110R, 110G and 100B, respectively, were known to emit (1) 10% green and 10% blue, (2) 10% red and 10% blue and (3) 10% red and 10% green, respectively, then a grey output at a selected level (levels) could be achieved by requesting each resonant structure output levels/(1+0.1+0.1) or levels/1.2.
  • As shown in FIGS. 21A and 21B, plural resonant structures can be concatenated in series and driven by the same source 140 of charged particles. In FIG. 21A, the source 140 emits a beam 130 of charged particles. In such a “normally on” configuration, if the resonant structure 110 1 is to be excited, then the deflectors 160 1, are not energized, and the beam 130 is allowed to pass the resonant structure 110 1 undeflected. Since the beam 130 is undeflected, the recentering deflectors 166 1 need not be energized either using their control terminals 167 1.
  • In the same “normally on” configuration, if the resonant structure 110 1 is not to be excited, then the deflectors 160 1 are energized using deflection control terminal 165 1, and the beam 130 is deflected away from the resonant structure 110 1. Since it is deflected, the beam 130 must be recentered while approaching the resonant structure 110 2. The recentering is performed using at least one recentering deflector 166 1 which is controlled using its corresponding control terminal 167 1.
  • The process is then repeated for the resonant structure 110 2 which is turned on or off by at least one deflector 160 2 using its corresponding at least one deflection control terminal 165 2. The process is repeated for as many resonant structures 110 as are arranged in series. In this way, the state (i.e., off, partially on, or fully on) of each resonant structure 110 1 can be controlled by an amount of deflection produced by its corresponding deflector 160 i, allowing the beam 130 to remain on and still selectively excite plural resonant structures using only a single beam 130.
  • As shown in FIG. 21B, between resonant structures 110, a focusing element 185 can be included such that the beam 130 is focused before passing through or while within the deflection range of the deflector(s) 165 2 of the adjacent resonant structure 110 2.
  • As an alternative to the “normally on” configuration of FIGS. 21A and 21B, a set of resonant structures in series can be arranged in a “normally off” configuration as well. In such a “normally off” configuration, if the resonant structure 110 1 is to be excited, then the at least one deflector 160 1 is energized, and the beam 130 is deflected sufficiently to excite at least a portion of the resonant structure 110 1, depending on the intensity at which the resonant structure 110 1 is to emit. Since the beam 130 is deflected, at least one recentering deflector 166 1 must also be energized using its control terminals 167 1. In the same “normally off” configuration, if the resonant structure 110 1 is not to be excited, then the deflectors 160 1 are not energized using deflection control terminal 165 1, and the beam 130 is left undeflected and does not excite the resonant structure 110 1. Since it is undeflected, the beam 130 need not be recentered using recentering deflector 166 1 while approaching the resonant structure 110 2. However, in a configuration including a focusing element 185 (as in FIG. 21B), the beam 130 may pass through the focusing element 185, whether or not the beam is deflected.
  • FIG. 22A shows a high-level image of a series of resonant structures, such as the resonant structures of FIG. 21A (but with control terminals removed to aid clarity). Each deflector 160 i, resonant structure 110 i and recentering deflector 166 i can be thought of as a resonant group 2200 i, and FIG. 22A separately identifies five such resonant groups (2200 1, 2200 2, 2200 n-2, 2200 n-1 and 2200 n). FIG. 22A also illustrates a special resonant group 2210 3 which includes a special recentering deflector 166 s1 that bends the beam 130 from a first direction to a second direction. The illustrated embodiment also includes a second special recentering deflector 166 s2 that bends the beam 130 from the second direction to a third direction (illustrated as opposite the first direction). The same beam 130 then passes additional resonant structures (of which only three are illustrated). It is to be understood that “n” resonant structures can be excited from the same beam 130, where n is greater than or equal to 1.
  • As would be appreciated by one of ordinary skill in the art, the number of resonant structures 110 or resonant groups 2200 that can be connected in series and the shape of the path of the beam can be varied. FIG. 22B illustrates that a U-shaped pattern allows at least one additional resonant group 2200 m to be connected in series. That additional resonant group 2200 m includes a resonant structure 110 m that is oriented in a direction different than the directions of FIG. 22A. As illustrated, the orientation of the resonant structure 110 m could be turned ninety degrees compared to the resonant structures 110 1-110 3 and 110 n-2-110 n of FIG. 22A.
  • As illustrated in FIG. 22C, the path of the beam can also be made circular or oval by using special resonant groups 2210.
  • Alternatively, as shown in FIG. 22D, a matrix of elements can be created from a single source 140 using a mixture of resonant groups (e.g., 2200 1,1 and 2200 1,2) and special resonant groups (e.g., 2210 4,1). Such a matrix can be used is a display such as a computer monitor or a television screen.
  • FIG. 23 illustrates that the same technique that has been described above with respect to arranging a set of resonant groups (having a single resonant structure per group) in series is also applicable to multi-color elements with plural frequencies per element. As illustrated in FIG. 23, a first set of red, green and blue resonant groups (2310R, 2310G, and 2310B) and their intensities (if any) are selected using a deflector 160. (If none of the resonant groups are to be turned on, the beam can be deflected in the direction of any of the resonant structures but a sufficient distance away such that none of the resonant structures are actually excited.) The resonant groups further include a recentering deflector (not shown) which directs the beam back towards a special deflector 2360 which can compensate for the amount of deflection that the beam underwent before arriving at the deflector 2360. This enables the beam 130 to be recentered (and optionally refocused) before or while being passed on to an adjacent set of resonant structures (either single-frequency or multi-frequency).
  • If a most common series of colors is known in advance, the locations and order of the colors can be laid out such that the most common series of colors requires the least amount of deflection. This reduces the energy consumption required to achieve the most common color arrangement. For example, as shown in FIG. 23, an all-green series of emitters requires the least amount of deflection and therefore energy.
  • Additional details about the manufacture and use of such resonant structures are provided in the above-referenced co-pending applications, the contents of which are incorporated herein by reference.
  • The structures of the present invention may include a multi-pin structure. In one embodiment, two pins are used where the voltage between them is indicative of what frequency band, if any, should be emitted, but at a common intensity. In another embodiment, the frequency is selected on one pair of pins and the intensity is selected on another pair of pins (potentially sharing a common ground pin with the first pair). In a more digital configuration, commands may be sent to the device (1) to turn the transmission of EMR on and off, (2) to set the frequency to be emitted and/or (3) to set the intensity of the EMR to be emitted. A controller (not shown) receives the corresponding voltage(s) or commands on the pins and controls the director to select the appropriate resonant structure and optionally to produce the requested intensity.
  • While certain configurations of display structures have been illustrated for the purposes of presenting the basic structures of the present invention, one of ordinary skill in the art will appreciate that other variations are possible which would still fall within the scope of the appended claims.

Claims (15)

1. A modulated electromagnetic radiation emitter, comprising:
a charged particle generator configured to generate a beam of charged particles;
at least one resonant structure configured to resonate at at least one resonant frequency higher than a microwave frequency when exposed to the beam of charged particles, and
a director for directing the beam of charged particles away from the at least one resonant structure when the resonant structure is not to resonate.
2. The emitter according to claim 1, wherein the director is one from the group consisting of: a deflector, a diffractor, or an optical structure.
3. The emitter according to claim 1, wherein the director comprises at least one deflection plate between the charged particle generator and the at least one resonant structure.
4. The emitter according to claim 1, wherein the generator comprises a plurality of charged particle sources.
5. The emitter according to claim 1, wherein the at least one resonant structure comprises at least one silver-based structure.
6. The emitter according to claim 1, wherein the at least one resonant structure comprises at least one etched-silver-based structure.
7. The emitter according to claim 1, wherein the beam of charged particles passes next to the at least one resonant structure and the director directs the beam away from a side of the at least one resonant structure a distance sufficient to prevent the at least one resonant structure from resonating.
8. The emitter according to claim 1, wherein the beam of charged particles passes above the at least one resonant structure and the director directs the beam away from a top of the at least one resonant structure a distance sufficient to prevent the at least one resonant structure from resonating.
9. A method of selectively producing electromagnetic radiation, comprising:
generating a beam of charged particles;
directing the beam of charged particles towards at least one resonant structure, wherein the at least one resonant structure is configured to resonate at a resonant frequency higher than a microwave frequency when exposed to the beam of charged particles, and
directing the beam of charged particles away from the at least one resonant structure prior to exciting the at least one resonant structure when the resonant structure is not to be excited.
10. The method according to claim 9, wherein directing comprises directing the beam utilizing a director selected from the group consisting of: a deflector, a diffractor, or an optical structure.
11. The method according to claim 9, wherein the directing comprises directing the beam utilizing at least one deflection plate between a source of the beam and the at least one resonant structure.
12. The method according to claim 9, wherein the at least one resonant structure comprises at least one silver-based structure.
13. The method according to claim 9, wherein the at least one resonant structure comprises at least one etched-silver-based structure.
14. The method according to claim 9, wherein the beam of charged particles passes next to the at least one resonant structure and the directing comprises directing the beam away from a side of the at least one resonant structure a distance sufficient to prevent the at least one resonant structure from resonating.
15. The method according to claim 9, wherein the beam of charged particles passes above the at least one resonant structure and the directing comprises directing the beam away from a top of the at least one resonant structure a distance sufficient to prevent the at least one resonant structure from resonating.
US12/329,866 2004-08-13 2008-12-08 Switching micro-resonant structures by modulating a beam of charged particles Active 2027-08-06 US8384042B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/329,866 US8384042B2 (en) 2006-01-05 2008-12-08 Switching micro-resonant structures by modulating a beam of charged particles
US13/774,593 US9076623B2 (en) 2004-08-13 2013-02-22 Switching micro-resonant structures by modulating a beam of charged particles
US14/487,263 US20150001424A1 (en) 2004-08-13 2014-09-16 Switching micro-resonant structures by modulating a beam of charged particles

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/325,534 US7586097B2 (en) 2006-01-05 2006-01-05 Switching micro-resonant structures using at least one director
US12/329,866 US8384042B2 (en) 2006-01-05 2008-12-08 Switching micro-resonant structures by modulating a beam of charged particles

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/325,534 Continuation US7586097B2 (en) 2004-08-13 2006-01-05 Switching micro-resonant structures using at least one director

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/774,593 Continuation US9076623B2 (en) 2004-08-13 2013-02-22 Switching micro-resonant structures by modulating a beam of charged particles

Publications (2)

Publication Number Publication Date
US20090140178A1 true US20090140178A1 (en) 2009-06-04
US8384042B2 US8384042B2 (en) 2013-02-26

Family

ID=38224862

Family Applications (4)

Application Number Title Priority Date Filing Date
US11/325,534 Active 2027-03-11 US7586097B2 (en) 2004-08-13 2006-01-05 Switching micro-resonant structures using at least one director
US12/329,866 Active 2027-08-06 US8384042B2 (en) 2004-08-13 2008-12-08 Switching micro-resonant structures by modulating a beam of charged particles
US13/774,593 Active - Reinstated US9076623B2 (en) 2004-08-13 2013-02-22 Switching micro-resonant structures by modulating a beam of charged particles
US14/487,263 Abandoned US20150001424A1 (en) 2004-08-13 2014-09-16 Switching micro-resonant structures by modulating a beam of charged particles

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/325,534 Active 2027-03-11 US7586097B2 (en) 2004-08-13 2006-01-05 Switching micro-resonant structures using at least one director

Family Applications After (2)

Application Number Title Priority Date Filing Date
US13/774,593 Active - Reinstated US9076623B2 (en) 2004-08-13 2013-02-22 Switching micro-resonant structures by modulating a beam of charged particles
US14/487,263 Abandoned US20150001424A1 (en) 2004-08-13 2014-09-16 Switching micro-resonant structures by modulating a beam of charged particles

Country Status (3)

Country Link
US (4) US7586097B2 (en)
TW (1) TW200727579A (en)
WO (1) WO2007081390A2 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK1319183T3 (en) * 2000-09-12 2009-05-18 Massachusetts Inst Technology Methods and products related to low molecular weight heparin
US7586097B2 (en) 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
US7626179B2 (en) 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
US7791290B2 (en) 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US7443358B2 (en) 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
US7876793B2 (en) 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
US7646991B2 (en) * 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US7723698B2 (en) 2006-05-05 2010-05-25 Virgin Islands Microsystems, Inc. Top metal layer shield for ultra-small resonant structures
US7741934B2 (en) 2006-05-05 2010-06-22 Virgin Islands Microsystems, Inc. Coupling a signal through a window
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
US7656094B2 (en) 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7746532B2 (en) 2006-05-05 2010-06-29 Virgin Island Microsystems, Inc. Electro-optical switching system and method
US7728702B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US7710040B2 (en) * 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7732786B2 (en) 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US7718977B2 (en) 2006-05-05 2010-05-18 Virgin Island Microsystems, Inc. Stray charged particle removal device
US7986113B2 (en) 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7573045B2 (en) * 2006-05-15 2009-08-11 Virgin Islands Microsystems, Inc. Plasmon wave propagation devices and methods
US7679067B2 (en) 2006-05-26 2010-03-16 Virgin Island Microsystems, Inc. Receiver array using shared electron beam
US7655934B2 (en) 2006-06-28 2010-02-02 Virgin Island Microsystems, Inc. Data on light bulb
US7659513B2 (en) 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
US7791053B2 (en) * 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
US8716662B1 (en) 2012-07-16 2014-05-06 Kla-Tencor Corporation Methods and apparatus to review defects using scanning electron microscope with multiple electron beam configurations
WO2014107173A1 (en) * 2013-01-02 2014-07-10 California Institute Of Technology Piezoresistive nems resonator array

Citations (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1948384A (en) * 1932-01-26 1934-02-20 Research Corp Method and apparatus for the acceleration of ions
US2307086A (en) * 1941-05-07 1943-01-05 Univ Leland Stanford Junior High frequency electrical apparatus
US2397905A (en) * 1944-08-07 1946-04-09 Int Harvester Co Thrust collar construction
US2634372A (en) * 1953-04-07 Super high-frequency electromag
US2932798A (en) * 1956-01-05 1960-04-12 Research Corp Imparting energy to charged particles
US3231779A (en) * 1962-06-25 1966-01-25 Gen Electric Elastic wave responsive apparatus
US3297905A (en) * 1963-02-06 1967-01-10 Varian Associates Electron discharge device of particular materials for stabilizing frequency and reducing magnetic field problems
US3315117A (en) * 1963-07-15 1967-04-18 Burton J Udelson Electrostatically focused electron beam phase shifter
US3560694A (en) * 1969-01-21 1971-02-02 Varian Associates Microwave applicator employing flat multimode cavity for treating webs
US3571642A (en) * 1968-01-17 1971-03-23 Ca Atomic Energy Ltd Method and apparatus for interleaved charged particle acceleration
US4570103A (en) * 1982-09-30 1986-02-11 Schoen Neil C Particle beam accelerators
US4652703A (en) * 1983-03-01 1987-03-24 Racal Data Communications Inc. Digital voice transmission having improved echo suppression
US4661783A (en) * 1981-03-18 1987-04-28 The United States Of America As Represented By The Secretary Of The Navy Free electron and cyclotron resonance distributed feedback lasers and masers
US4727550A (en) * 1985-09-19 1988-02-23 Chang David B Radiation source
US4740973A (en) * 1984-05-21 1988-04-26 Madey John M J Free electron laser
US4740963A (en) * 1986-01-30 1988-04-26 Lear Siegler, Inc. Voice and data communication system
US4806859A (en) * 1987-01-27 1989-02-21 Ford Motor Company Resonant vibrating structures with driving sensing means for noncontacting position and pick up sensing
US4809271A (en) * 1986-11-14 1989-02-28 Hitachi, Ltd. Voice and data multiplexer system
US4813040A (en) * 1986-10-31 1989-03-14 Futato Steven P Method and apparatus for transmitting digital data and real-time digitalized voice information over a communications channel
US4819228A (en) * 1984-10-29 1989-04-04 Stratacom Inc. Synchronous packet voice/data communication system
US4822436A (en) * 1986-03-07 1989-04-18 Northrop Corporation Apparatus for debulking and autoclaving laminates of complex shapes
US4898022A (en) * 1987-02-09 1990-02-06 Tlv Co., Ltd. Steam trap operation detector
US4912705A (en) * 1985-03-20 1990-03-27 International Mobile Machines Corporation Subscriber RF telephone system for providing multiple speech and/or data signals simultaneously over either a single or a plurality of RF channels
US4981371A (en) * 1989-02-17 1991-01-01 Itt Corporation Integrated I/O interface for communication terminal
US5185073A (en) * 1988-06-21 1993-02-09 International Business Machines Corporation Method of fabricating nendritic materials
US5187591A (en) * 1991-01-24 1993-02-16 Micom Communications Corp. System for transmitting and receiving aural information and modulated data
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5241244A (en) * 1991-03-07 1993-08-31 Proel Tecnologie S.P.A. Cyclotron resonance ion engine
US5282197A (en) * 1992-05-15 1994-01-25 International Business Machines Low frequency audio sub-channel embedded signalling
US5283819A (en) * 1991-04-25 1994-02-01 Compuadd Corporation Computing and multimedia entertainment system
US5293175A (en) * 1991-07-19 1994-03-08 Conifer Corporation Stacked dual dipole MMDS feed
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5305312A (en) * 1992-02-07 1994-04-19 At&T Bell Laboratories Apparatus for interfacing analog telephones and digital data terminals to an ISDN line
US5485277A (en) * 1994-07-26 1996-01-16 Physical Optics Corporation Surface plasmon resonance sensor and methods for the utilization thereof
US5504341A (en) * 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5604352A (en) * 1995-04-25 1997-02-18 Raychem Corporation Apparatus comprising voltage multiplication components
US5608263A (en) * 1994-09-06 1997-03-04 The Regents Of The University Of Michigan Micromachined self packaged circuits for high-frequency applications
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
US5737458A (en) * 1993-03-29 1998-04-07 Martin Marietta Corporation Optical light pipe and microwave waveguide interconnects in multichip modules formed using adaptive lithography
US5739579A (en) * 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
US5858799A (en) * 1995-10-25 1999-01-12 University Of Washington Surface plasmon resonance chemical electrode
US5882779A (en) * 1994-11-08 1999-03-16 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5889797A (en) * 1996-08-26 1999-03-30 The Regents Of The University Of California Measuring short electron bunch lengths using coherent smith-purcell radiation
US5889449A (en) * 1995-12-07 1999-03-30 Space Systems/Loral, Inc. Electromagnetic transmission line elements having a boundary between materials of high and low dielectric constants
US6040625A (en) * 1997-09-25 2000-03-21 I/O Sensors, Inc. Sensor package arrangement
US6180415B1 (en) * 1997-02-20 2001-01-30 The Regents Of The University Of California Plasmon resonant particles, methods and apparatus
US6195199B1 (en) * 1997-10-27 2001-02-27 Kanazawa University Electron tube type unidirectional optical amplifier
US6338968B1 (en) * 1998-02-02 2002-01-15 Signature Bioscience, Inc. Method and apparatus for detecting molecular binding events
US20020017827A1 (en) * 1999-05-04 2002-02-14 Zuppero Anthony C. Pulsed electron jump generator
US20020036264A1 (en) * 2000-07-27 2002-03-28 Mamoru Nakasuji Sheet beam-type inspection apparatus
US20020036121A1 (en) * 2000-09-08 2002-03-28 Ronald Ball Illumination system for escalator handrails
US6504303B2 (en) * 2000-06-01 2003-01-07 Raytheon Company Optical magnetron for high efficiency production of optical radiation, and 1/2λ induced pi-mode operation
US20030012925A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing
US20030010979A1 (en) * 2000-01-14 2003-01-16 Fabrice Pardo Vertical metal-semiconductor microresonator photodetecting device and production method thereof
US20030016421A1 (en) * 2000-06-01 2003-01-23 Small James G. Wireless communication system with high efficiency/high power optical source
US20030016412A1 (en) * 2001-07-17 2003-01-23 Alcatel Monitoring unit for optical burst mode signals
US20030034535A1 (en) * 2001-08-15 2003-02-20 Motorola, Inc. Mems devices suitable for integration with chip having integrated silicon and compound semiconductor devices, and methods for fabricating such devices
US6525477B2 (en) * 2001-05-29 2003-02-25 Raytheon Company Optical magnetron generator
US6524461B2 (en) * 1998-10-14 2003-02-25 Faraday Technology Marketing Group, Llc Electrodeposition of metals in small recesses using modulated electric fields
US6534766B2 (en) * 2000-03-28 2003-03-18 Kabushiki Kaisha Toshiba Charged particle beam system and pattern slant observing method
US20040011432A1 (en) * 2002-07-17 2004-01-22 Podlaha Elizabeth J. Metal alloy electrodeposited microstructures
US6687034B2 (en) * 2001-03-23 2004-02-03 Microvision, Inc. Active tuning of a torsional resonant structure
US6700748B1 (en) * 2000-04-28 2004-03-02 International Business Machines Corporation Methods for creating ground paths for ILS
US20050023145A1 (en) * 2003-05-07 2005-02-03 Microfabrica Inc. Methods and apparatus for forming multi-layer structures using adhered masks
US20050045821A1 (en) * 2003-04-22 2005-03-03 Nobuharu Noji Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US20050045832A1 (en) * 2003-07-11 2005-03-03 Kelly Michael A. Non-dispersive charged particle energy analyzer
US20050054151A1 (en) * 2002-01-04 2005-03-10 Intersil Americas Inc. Symmetric inducting device for an integrated circuit having a ground shield
US6871025B2 (en) * 2000-06-15 2005-03-22 California Institute Of Technology Direct electrical-to-optical conversion and light modulation in micro whispering-gallery-mode resonators
US6870438B1 (en) * 1999-11-10 2005-03-22 Kyocera Corporation Multi-layered wiring board for slot coupling a transmission line to a waveguide
US20050062903A1 (en) * 2003-09-23 2005-03-24 Eastman Kodak Company Organic laser and liquid crystal display
US20050067286A1 (en) * 2003-09-26 2005-03-31 The University Of Cincinnati Microfabricated structures and processes for manufacturing same
US20060007700A1 (en) * 2004-07-06 2006-01-12 Au Optronics Corp. Backlight module capable of interchanging polarized states of light
US20060007730A1 (en) * 2002-11-26 2006-01-12 Kabushiki Kaisha Toshiba Magnetic cell and magnetic memory
US20060018619A1 (en) * 2004-06-18 2006-01-26 Helffrich Jerome A System and Method for Detection of Fiber Optic Cable Using Static and Induced Charge
US20060020667A1 (en) * 2004-07-22 2006-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic mail system and method for multi-geographical domains
US20060023991A1 (en) * 2004-07-29 2006-02-02 Akihiko Okubora Photoelectronic device and production method of the same
US6995406B2 (en) * 2002-06-10 2006-02-07 Tsuyoshi Tojo Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
US20060035173A1 (en) * 2004-08-13 2006-02-16 Mark Davidson Patterning thin metal films by dry reactive ion etching
US20060045418A1 (en) * 2004-08-25 2006-03-02 Information And Communication University Research And Industrial Cooperation Group Optical printed circuit board and optical interconnection block using optical fiber bundle
US7010183B2 (en) * 2002-03-20 2006-03-07 The Regents Of The University Of Colorado Surface plasmon devices
US20060050269A1 (en) * 2002-09-27 2006-03-09 Brownell James H Free electron laser, and associated components and methods
US20060062258A1 (en) * 2004-07-02 2006-03-23 Vanderbilt University Smith-Purcell free electron laser and method of operating same
US20060060782A1 (en) * 2004-06-16 2006-03-23 Anjam Khursheed Scanning electron microscope
US20070003781A1 (en) * 2005-06-30 2007-01-04 De Rochemont L P Electrical components and method of manufacture
US20070013765A1 (en) * 2005-07-18 2007-01-18 Eastman Kodak Company Flexible organic laser printer
US7177515B2 (en) * 2002-03-20 2007-02-13 The Regents Of The University Of Colorado Surface plasmon devices
US20070034518A1 (en) * 2005-08-15 2007-02-15 Virgin Islands Microsystems, Inc. Method of patterning ultra-small structures
US7194798B2 (en) * 2004-06-30 2007-03-27 Hitachi Global Storage Technologies Netherlands B.V. Method for use in making a write coil of magnetic head
US7342441B2 (en) * 2006-05-05 2008-03-11 Virgin Islands Microsystems, Inc. Heterodyne receiver array using resonant structures
US20080069509A1 (en) * 2006-09-19 2008-03-20 Virgin Islands Microsystems, Inc. Microcircuit using electromagnetic wave routing
US7473917B2 (en) * 2005-12-16 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and method
US7482185B2 (en) * 2005-08-03 2009-01-27 Industrial Technology Research Institute Vertical pixel structures for emi-flective display and methods for making the same
US20090027280A1 (en) * 2005-05-05 2009-01-29 Frangioni John V Micro-scale resonant devices and methods of use
US7498730B2 (en) * 2004-01-16 2009-03-03 C.R.F. Societa Consortile Per Azioni Light emitting device with photonic crystal
US7646991B2 (en) * 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US7656094B2 (en) * 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7659513B2 (en) * 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector
US7876793B2 (en) * 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)

Family Cites Families (265)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US518073A (en) * 1894-04-10 Dolph
US2431396A (en) 1942-12-21 1947-11-25 Rca Corp Current magnitude-ratio responsive amplifier
US2473477A (en) 1946-07-24 1949-06-14 Raythcon Mfg Company Magnetic induction device
US2944183A (en) 1957-01-25 1960-07-05 Bell Telephone Labor Inc Internal cavity reflex klystron tuned by a tightly coupled external cavity
US2966611A (en) 1959-07-21 1960-12-27 Sperry Rand Corp Ruggedized klystron tuner
US3274428A (en) 1962-06-29 1966-09-20 English Electric Valve Co Ltd Travelling wave tube with band pass slow wave structure whose frequency characteristic changes along its length
US3387169A (en) 1965-05-07 1968-06-04 Sfd Lab Inc Slow wave structure of the comb type having strap means connecting the teeth to form iterative inductive shunt loadings
US4053845A (en) 1967-03-06 1977-10-11 Gordon Gould Optically pumped laser amplifiers
US4746201A (en) * 1967-03-06 1988-05-24 Gordon Gould Polarizing apparatus employing an optical element inclined at brewster's angle
US3546524A (en) 1967-11-24 1970-12-08 Varian Associates Linear accelerator having the beam injected at a position of maximum r.f. accelerating field
US3543147A (en) 1968-03-29 1970-11-24 Atomic Energy Commission Phase angle measurement system for determining and controlling the resonance of the radio frequency accelerating cavities for high energy charged particle accelerators
US3586899A (en) 1968-06-12 1971-06-22 Ibm Apparatus using smith-purcell effect for frequency modulation and beam deflection
US3761828A (en) 1970-12-10 1973-09-25 J Pollard Linear particle accelerator with coast through shield
US3886399A (en) * 1973-08-20 1975-05-27 Varian Associates Electron beam electrical power transmission system
US3923568A (en) 1974-01-14 1975-12-02 Int Plasma Corp Dry plasma process for etching noble metal
DE2429612C2 (en) 1974-06-20 1984-08-02 Siemens AG, 1000 Berlin und 8000 München Acousto-optical data input converter for block-organized holographic data storage and method for its control
US4704583A (en) 1974-08-16 1987-11-03 Gordon Gould Light amplifiers employing collisions to produce a population inversion
JPS6056238B2 (en) 1979-06-01 1985-12-09 株式会社井上ジャパックス研究所 Electroplating method
US4296354A (en) 1979-11-28 1981-10-20 Varian Associates, Inc. Traveling wave tube with frequency variable sever length
US4282436A (en) 1980-06-04 1981-08-04 The United States Of America As Represented By The Secretary Of The Navy Intense ion beam generation with an inverse reflex tetrode (IRT)
US4453108A (en) 1980-11-21 1984-06-05 William Marsh Rice University Device for generating RF energy from electromagnetic radiation of another form such as light
US4450554A (en) * 1981-08-10 1984-05-22 International Telephone And Telegraph Corporation Asynchronous integrated voice and data communication system
US4528659A (en) 1981-12-17 1985-07-09 International Business Machines Corporation Interleaved digital data and voice communications system apparatus and method
US4589107A (en) * 1982-11-30 1986-05-13 Itt Corporation Simultaneous voice and data communication and data base access in a switching system using a combined voice conference and data base processing module
US4482779A (en) 1983-04-19 1984-11-13 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Inelastic tunnel diodes
US4598397A (en) 1984-02-21 1986-07-01 Cxc Corporation Microtelephone controller
US4713581A (en) 1983-08-09 1987-12-15 Haimson Research Corporation Method and apparatus for accelerating a particle beam
US4829527A (en) * 1984-04-23 1989-05-09 The United States Of America As Represented By The Secretary Of The Army Wideband electronic frequency tuning for orotrons
DE3479468D1 (en) 1984-05-23 1989-09-21 Ibm Digital transmission system for a packetized voice
GB2171576B (en) 1985-02-04 1989-07-12 Mitel Telecom Ltd Spread spectrum leaky feeder communication system
JPS6229135A (en) 1985-07-29 1987-02-07 Advantest Corp Charged particle beam exposure and device thereof
IL79775A (en) 1985-08-23 1990-06-10 Republic Telcom Systems Corp Multiplexed digital packet telephone system
US4712042A (en) 1986-02-03 1987-12-08 Accsys Technology, Inc. Variable frequency RFQ linear accelerator
JPS62142863U (en) 1986-03-05 1987-09-09
JPH0763171B2 (en) 1986-06-10 1995-07-05 株式会社日立製作所 Data / voice transmission / reception method
US4761059A (en) 1986-07-28 1988-08-02 Rockwell International Corporation External beam combining of multiple lasers
US5163118A (en) 1986-11-10 1992-11-10 The United States Of America As Represented By The Secretary Of The Air Force Lattice mismatched hetrostructure optical waveguide
US4932022A (en) 1987-10-07 1990-06-05 Telenova, Inc. Integrated voice and data telephone system
US4864131A (en) 1987-11-09 1989-09-05 The University Of Michigan Positron microscopy
US4838021A (en) 1987-12-11 1989-06-13 Hughes Aircraft Company Electrostatic ion thruster with improved thrust modulation
US4890282A (en) 1988-03-08 1989-12-26 Network Equipment Technologies, Inc. Mixed mode compression for data transmission
US4866704A (en) 1988-03-16 1989-09-12 California Institute Of Technology Fiber optic voice/data network
US4887265A (en) 1988-03-18 1989-12-12 Motorola, Inc. Packet-switched cellular telephone system
JPH0744511B2 (en) 1988-09-14 1995-05-15 富士通株式会社 High suburb rate multiplexing method
US5130985A (en) 1988-11-25 1992-07-14 Hitachi, Ltd. Speech packet communication system and method
FR2641093B1 (en) 1988-12-23 1994-04-29 Alcatel Business Systems
US5023563A (en) 1989-06-08 1991-06-11 Hughes Aircraft Company Upshifted free electron laser amplifier
US5036513A (en) 1989-06-21 1991-07-30 Academy Of Applied Science Method of and apparatus for integrated voice (audio) communication simultaneously with "under voice" user-transparent digital data between telephone instruments
US5157000A (en) 1989-07-10 1992-10-20 Texas Instruments Incorporated Method for dry etching openings in integrated circuit layers
US5155726A (en) 1990-01-22 1992-10-13 Digital Equipment Corporation Station-to-station full duplex communication in a token ring local area network
US5235248A (en) 1990-06-08 1993-08-10 The United States Of America As Represented By The United States Department Of Energy Method and split cavity oscillator/modulator to generate pulsed particle beams and electromagnetic fields
US5127001A (en) 1990-06-22 1992-06-30 Unisys Corporation Conference call arrangement for distributed network
US5113141A (en) * 1990-07-18 1992-05-12 Science Applications International Corporation Four-fingers RFQ linac structure
US5268693A (en) 1990-08-31 1993-12-07 Trustees Of Dartmouth College Semiconductor film free electron laser
US5263043A (en) 1990-08-31 1993-11-16 Trustees Of Dartmouth College Free electron laser utilizing grating coupling
US5128729A (en) 1990-11-13 1992-07-07 Motorola, Inc. Complex opto-isolator with improved stand-off voltage stability
US5214650A (en) * 1990-11-19 1993-05-25 Ag Communication Systems Corporation Simultaneous voice and data system using the existing two-wire inter-face
US5341374A (en) 1991-03-01 1994-08-23 Trilan Systems Corporation Communication network integrating voice data and video with distributed call processing
US5150410A (en) 1991-04-11 1992-09-22 Itt Corporation Secure digital conferencing system
FR2677490B1 (en) 1991-06-07 1997-05-16 Thomson Csf SEMICONDUCTOR OPTICAL TRANSCEIVER.
GB9113684D0 (en) 1991-06-25 1991-08-21 Smiths Industries Plc Display filter arrangements
US5466929A (en) 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
WO1993018428A2 (en) 1992-03-13 1993-09-16 Kopin Corporation Head-mounted display system
WO1993021663A1 (en) 1992-04-08 1993-10-28 Georgia Tech Research Corporation Process for lift-off of thin film materials from a growth substrate
US5233623A (en) 1992-04-29 1993-08-03 Research Foundation Of State University Of New York Integrated semiconductor laser with electronic directivity and focusing control
US5539414A (en) 1993-09-02 1996-07-23 Inmarsat Folded dipole microstrip antenna
TW255015B (en) 1993-11-05 1995-08-21 Motorola Inc
US5578909A (en) 1994-07-15 1996-11-26 The Regents Of The Univ. Of California Coupled-cavity drift-tube linac
JP2770755B2 (en) 1994-11-16 1998-07-02 日本電気株式会社 Field emission type electron gun
US5637966A (en) 1995-02-06 1997-06-10 The Regents Of The University Of Michigan Method for generating a plasma wave to accelerate electrons
JP2921430B2 (en) 1995-03-03 1999-07-19 双葉電子工業株式会社 Optical writing element
JP3487699B2 (en) 1995-11-08 2004-01-19 株式会社日立製作所 Ultrasonic treatment method and apparatus
KR0176876B1 (en) 1995-12-12 1999-03-20 구자홍 Magnetron
US6008577A (en) 1996-01-18 1999-12-28 Micron Technology, Inc. Flat panel display with magnetic focusing layer
JPH09223475A (en) 1996-02-19 1997-08-26 Nikon Corp Electromagnetic deflector and charge particle beam transfer apparatus using thereof
US5825140A (en) 1996-02-29 1998-10-20 Nissin Electric Co., Ltd. Radio-frequency type charged particle accelerator
US5663971A (en) 1996-04-02 1997-09-02 The Regents Of The University Of California, Office Of Technology Transfer Axial interaction free-electron laser
US5821705A (en) 1996-06-25 1998-10-13 The United States Of America As Represented By The United States Department Of Energy Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators
AU4055297A (en) 1996-08-08 1998-02-25 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
KR100226752B1 (en) 1996-08-26 1999-10-15 구본준 Method for forming multi-metal interconnection layer of semiconductor device
US5811943A (en) 1996-09-23 1998-09-22 Schonberg Research Corporation Hollow-beam microwave linear accelerator
AU4896297A (en) * 1996-10-18 1998-05-15 Microwave Technologies Inc. Rotating-wave electron beam accelerator
US5780970A (en) 1996-10-28 1998-07-14 University Of Maryland Multi-stage depressed collector for small orbit gyrotrons
US5790585A (en) 1996-11-12 1998-08-04 The Trustees Of Dartmouth College Grating coupling free electron laser apparatus and method
US5744919A (en) * 1996-12-12 1998-04-28 Mishin; Andrey V. CW particle accelerator with low particle injection velocity
US5757009A (en) * 1996-12-27 1998-05-26 Northrop Grumman Corporation Charged particle beam expander
JPH10200204A (en) * 1997-01-06 1998-07-31 Fuji Xerox Co Ltd Surface-emitting semiconductor laser, manufacturing method thereof, and surface-emitting semiconductor laser array using the same
US6624916B1 (en) 1997-02-11 2003-09-23 Quantumbeam Limited Signalling system
US6008496A (en) 1997-05-05 1999-12-28 University Of Florida High resolution resonance ionization imaging detector and method
US5821836A (en) 1997-05-23 1998-10-13 The Regents Of The University Of Michigan Miniaturized filter assembly
CZ298765B6 (en) * 1997-06-19 2008-01-23 European Organization For Nuclear Research Method of exposing material to neutron flux, method of producing useful isotope comprising such exposing method and method of transmuting at least one long-lived isotope comprising such exposing method
US5972193A (en) 1997-10-10 1999-10-26 Industrial Technology Research Institute Method of manufacturing a planar coil using a transparency substrate
US6117784A (en) 1997-11-12 2000-09-12 International Business Machines Corporation Process for integrated circuit wiring
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6370306B1 (en) * 1997-12-15 2002-04-09 Seiko Instruments Inc. Optical waveguide probe and its manufacturing method
KR100279737B1 (en) 1997-12-19 2001-02-01 정선종 Short-wavelength photoelectric device composed of field emission device and optical device and fabrication method thereof
US5963857A (en) 1998-01-20 1999-10-05 Lucent Technologies, Inc. Article comprising a micro-machined filter
EP0969493A1 (en) 1998-07-03 2000-01-05 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Apparatus and method for examining specimen with a charged particle beam
JP2972879B1 (en) 1998-08-18 1999-11-08 金沢大学長 One-way optical amplifier
US6316876B1 (en) 1998-08-19 2001-11-13 Eiji Tanabe High gradient, compact, standing wave linear accelerator structure
JP3666267B2 (en) 1998-09-18 2005-06-29 株式会社日立製作所 Automatic charged particle beam scanning inspection system
CA2314109A1 (en) 1998-10-14 2000-04-20 Faraday Technology, Inc. Electrodeposition of metals in small recesses using modulated electric fields
US6210555B1 (en) 1999-01-29 2001-04-03 Faraday Technology Marketing Group, Llc Electrodeposition of metals in small recesses for manufacture of high density interconnects using reverse pulse plating
US6577040B2 (en) 1999-01-14 2003-06-10 The Regents Of The University Of Michigan Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices
US6297511B1 (en) 1999-04-01 2001-10-02 Raytheon Company High frequency infrared emitter
JP3465627B2 (en) 1999-04-28 2003-11-10 株式会社村田製作所 Electronic components, dielectric resonators, dielectric filters, duplexers, communication equipment
US6724486B1 (en) * 1999-04-28 2004-04-20 Zygo Corporation Helium- Neon laser light source generating two harmonically related, single- frequency wavelengths for use in displacement and dispersion measuring interferometry
JP3057229B1 (en) 1999-05-20 2000-06-26 金沢大学長 Electromagnetic wave amplifier and electromagnetic wave generator
JP3792126B2 (en) 1999-05-25 2006-07-05 ナヴォテック・ゲーエムベーハー Small terahertz radiation source
TW408496B (en) * 1999-06-21 2000-10-11 United Microelectronics Corp The structure of image sensor
US6309528B1 (en) 1999-10-15 2001-10-30 Faraday Technology Marketing Group, Llc Sequential electrodeposition of metals using modulated electric fields for manufacture of circuit boards having features of different sizes
DE60011031T2 (en) 2000-02-01 2005-06-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Optical column for particle beam device
US6593539B1 (en) 2000-02-25 2003-07-15 George Miley Apparatus and methods for controlling charged particles
JP3667188B2 (en) 2000-03-03 2005-07-06 キヤノン株式会社 Electron beam excitation laser device and multi-electron beam excitation laser device
DE10019359C2 (en) 2000-04-18 2002-11-07 Nanofilm Technologie Gmbh SPR sensor
US6453087B2 (en) 2000-04-28 2002-09-17 Confluent Photonics Co. Miniature monolithic optical add-drop multiplexer
JP2002121699A (en) 2000-05-25 2002-04-26 Nippon Techno Kk Electroplating method using combination of vibrating flow and impulsive plating current of plating bath
US7064500B2 (en) 2000-05-26 2006-06-20 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6545425B2 (en) * 2000-05-26 2003-04-08 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6800877B2 (en) 2000-05-26 2004-10-05 Exaconnect Corp. Semi-conductor interconnect using free space electron switch
US6407516B1 (en) 2000-05-26 2002-06-18 Exaconnect Inc. Free space electron switch
US6801002B2 (en) * 2000-05-26 2004-10-05 Exaconnect Corp. Use of a free space electron switch in a telecommunications network
US6829286B1 (en) 2000-05-26 2004-12-07 Opticomp Corporation Resonant cavity enhanced VCSEL/waveguide grating coupler
US6972421B2 (en) 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
US6441298B1 (en) 2000-08-15 2002-08-27 Nec Research Institute, Inc Surface-plasmon enhanced photovoltaic device
WO2002025785A2 (en) 2000-09-22 2002-03-28 Vermont Photonics Apparatuses and methods for generating coherent electromagnetic laser radiation
JP3762208B2 (en) 2000-09-29 2006-04-05 株式会社東芝 Optical wiring board manufacturing method
IL156027A0 (en) 2000-12-01 2003-12-23 El Mul Technologies Ltd Device and method for the examination of samples in a non-vacuum environment using a scanning electron microscope
US6777244B2 (en) 2000-12-06 2004-08-17 Hrl Laboratories, Llc Compact sensor using microcavity structures
US20020071457A1 (en) 2000-12-08 2002-06-13 Hogan Josh N. Pulsed non-linear resonant cavity
KR20020061103A (en) 2001-01-12 2002-07-22 후루까와덴끼고오교 가부시끼가이샤 Antenna device and terminal with the antenna device
US6603781B1 (en) 2001-01-19 2003-08-05 Siros Technologies, Inc. Multi-wavelength transmitter
US6636653B2 (en) 2001-02-02 2003-10-21 Teravicta Technologies, Inc. Integrated optical micro-electromechanical systems and methods of fabricating and operating the same
US6603915B2 (en) 2001-02-05 2003-08-05 Fujitsu Limited Interposer and method for producing a light-guiding structure
US6636534B2 (en) 2001-02-26 2003-10-21 University Of Hawaii Phase displacement free-electron laser
JP3990983B2 (en) * 2001-02-28 2007-10-17 株式会社日立製作所 Method and apparatus for measuring physical properties of minute area
EP1307941B1 (en) 2001-03-02 2008-04-16 Matsushita Electric Industrial Co., Ltd. Dielectric filter and antenna duplexer
US6493424B2 (en) 2001-03-05 2002-12-10 Siemens Medical Solutions Usa, Inc. Multi-mode operation of a standing wave linear accelerator
SE520339C2 (en) 2001-03-07 2003-06-24 Acreo Ab Electrochemical transistor device, used for e.g. polymer batteries, includes active element having transistor channel made of organic material and gate electrode where voltage is applied to control electron flow
US7038399B2 (en) 2001-03-13 2006-05-02 Color Kinetics Incorporated Methods and apparatus for providing power to lighting devices
US6819432B2 (en) 2001-03-14 2004-11-16 Hrl Laboratories, Llc Coherent detecting receiver using a time delay interferometer and adaptive beam combiner
EP1243428A1 (en) 2001-03-20 2002-09-25 The Technology Partnership Public Limited Company Led print head for electrophotographic printer
US7077982B2 (en) 2001-03-23 2006-07-18 Fuji Photo Film Co., Ltd. Molecular electric wire, molecular electric wire circuit using the same and process for producing the molecular electric wire circuit
US6788847B2 (en) 2001-04-05 2004-09-07 Luxtera, Inc. Photonic input/output port
US6828642B2 (en) 2001-04-17 2004-12-07 Lockhead Martin Corporation Diffraction grating coupled infrared photodetector
US6912330B2 (en) 2001-05-17 2005-06-28 Sioptical Inc. Integrated optical/electronic circuits and associated methods of simultaneous generation thereof
US7068948B2 (en) 2001-06-13 2006-06-27 Gazillion Bits, Inc. Generation of optical signals with return-to-zero format
JP3698075B2 (en) 2001-06-20 2005-09-21 株式会社日立製作所 Semiconductor substrate inspection method and apparatus
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
US6990257B2 (en) 2001-09-10 2006-01-24 California Institute Of Technology Electronically biased strip loaded waveguide
US6640023B2 (en) 2001-09-27 2003-10-28 Memx, Inc. Single chip optical cross connect
US6831301B2 (en) 2001-10-15 2004-12-14 Micron Technology, Inc. Method and system for electrically coupling a chip to chip package
JP2003209411A (en) 2001-10-30 2003-07-25 Matsushita Electric Ind Co Ltd High frequency module and production method for high frequency module
US6808955B2 (en) 2001-11-02 2004-10-26 Intel Corporation Method of fabricating an integrated circuit that seals a MEMS device within a cavity
US6908355B2 (en) 2001-11-13 2005-06-21 Burle Technologies, Inc. Photocathode
US7248297B2 (en) 2001-11-30 2007-07-24 The Board Of Trustees Of The Leland Stanford Junior University Integrated color pixel (ICP)
US6943484B2 (en) 2001-12-06 2005-09-13 University Of Pittsburgh Tunable piezoelectric micro-mechanical resonator
US6828786B2 (en) 2002-01-18 2004-12-07 California Institute Of Technology Method and apparatus for nanomagnetic manipulation and sensing
US6950220B2 (en) 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US6738176B2 (en) 2002-04-30 2004-05-18 Mario Rabinowitz Dynamic multi-wavelength switching ensemble
AU2003272195A1 (en) 2002-04-30 2004-01-06 Hrl Laboratories, Llc Quartz-based nanoresonators and method of fabricating same
JP2003331774A (en) 2002-05-16 2003-11-21 Toshiba Corp Electron beam equipment and device manufacturing method using the equipment
US6887773B2 (en) 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process
US6833231B2 (en) * 2002-07-31 2004-12-21 3D Systems, Inc. Toughened stereolithographic resin compositions
JP3927883B2 (en) 2002-08-02 2007-06-13 キヤノン株式会社 Optical waveguide device and photoelectric fusion substrate using the same
EP1388883B1 (en) 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
JP4373063B2 (en) 2002-09-02 2009-11-25 株式会社半導体エネルギー研究所 Electronic circuit equipment
WO2004029658A1 (en) 2002-09-26 2004-04-08 Massachusetts Institute Of Technology Photonic crystals: a medium exhibiting anomalous cherenkov radiation
US6841795B2 (en) 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US6922118B2 (en) 2002-11-01 2005-07-26 Hrl Laboratories, Llc Micro electrical mechanical system (MEMS) tuning using focused ion beams
JP2004158970A (en) * 2002-11-05 2004-06-03 Ube Ind Ltd Band filter employing thin film piezoelectric resonator
WO2004045018A1 (en) 2002-11-07 2004-05-27 Sophia Wireless, Inc. Coupled resonator filters formed by micromachining
US6936981B2 (en) 2002-11-08 2005-08-30 Applied Materials, Inc. Retarding electron beams in multiple electron beam pattern generation
JP2004172965A (en) 2002-11-20 2004-06-17 Seiko Epson Corp Inter-chip optical interconnection circuit, electro-optical device and electronic appliance
US6924920B2 (en) 2003-05-29 2005-08-02 Stanislav Zhilkov Method of modulation and electron modulator for optical communication and data transmission
JP4249474B2 (en) 2002-12-06 2009-04-02 セイコーエプソン株式会社 Wavelength multiplexing chip-to-chip optical interconnection circuit
JP2004191392A (en) 2002-12-06 2004-07-08 Seiko Epson Corp Wavelength multiple intra-chip optical interconnection circuit, electro-optical device and electronic appliance
ITMI20022608A1 (en) 2002-12-09 2004-06-10 Fond Di Adroterapia Oncologic A Tera LINAC WITH DRAWING TUBES FOR THE ACCELERATION OF A BAND OF IONS.
US20040180244A1 (en) 2003-01-24 2004-09-16 Tour James Mitchell Process and apparatus for microwave desorption of elements or species from carbon nanotubes
US7157839B2 (en) 2003-01-27 2007-01-02 3M Innovative Properties Company Phosphor based light sources utilizing total internal reflection
JP4044453B2 (en) 2003-02-06 2008-02-06 株式会社東芝 Quantum memory and information processing method using quantum memory
US20040154925A1 (en) 2003-02-11 2004-08-12 Podlaha Elizabeth J. Composite metal and composite metal alloy microstructures
JP4574118B2 (en) 2003-02-12 2010-11-04 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US20040171272A1 (en) 2003-02-28 2004-09-02 Applied Materials, Inc. Method of etching metallic materials to form a tapered profile
US20040184270A1 (en) 2003-03-17 2004-09-23 Halter Michael A. LED light module with micro-reflector cavities
US6954515B2 (en) 2003-04-25 2005-10-11 Varian Medical Systems, Inc., Radiation sources and radiation scanning systems with improved uniformity of radiation intensity
US6884335B2 (en) 2003-05-20 2005-04-26 Novellus Systems, Inc. Electroplating using DC current interruption and variable rotation rate
US6943650B2 (en) 2003-05-29 2005-09-13 Freescale Semiconductor, Inc. Electromagnetic band gap microwave filter
US7446601B2 (en) 2003-06-23 2008-11-04 Astronix Research, Llc Electron beam RF amplifier and emitter
US20050194258A1 (en) 2003-06-27 2005-09-08 Microfabrica Inc. Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates
US6953291B2 (en) 2003-06-30 2005-10-11 Finisar Corporation Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
US7279686B2 (en) 2003-07-08 2007-10-09 Biomed Solutions, Llc Integrated sub-nanometer-scale electron beam systems
IL157344A0 (en) 2003-08-11 2004-06-20 Opgal Ltd Internal temperature reference source and mtf inverse filter for radiometry
US7099586B2 (en) 2003-09-04 2006-08-29 The Regents Of The University Of California Reconfigurable multi-channel all-optical regenerators
US7362972B2 (en) * 2003-09-29 2008-04-22 Jds Uniphase Inc. Laser transmitter capable of transmitting line data and supervisory information at a plurality of data rates
US7170142B2 (en) 2003-10-03 2007-01-30 Applied Materials, Inc. Planar integrated circuit including a plasmon waveguide-fed Schottky barrier detector and transistors connected therewith
US7295638B2 (en) 2003-11-17 2007-11-13 Motorola, Inc. Communication device
US7042982B2 (en) 2003-11-19 2006-05-09 Lucent Technologies Inc. Focusable and steerable micro-miniature x-ray apparatus
EP1723455B1 (en) 2003-12-05 2009-08-12 3M Innovative Properties Company Process for producing photonic crystals
EP1711737B1 (en) 2004-01-28 2013-09-18 Koninklijke Philips Electronics N.V. Sealed housing unit for lighting system
CA2554863C (en) 2004-01-28 2012-07-10 Tir Systems Ltd. Directly viewable luminaire
US7274835B2 (en) 2004-02-18 2007-09-25 Cornell Research Foundation, Inc. Optical waveguide displacement sensor
JP2005242219A (en) 2004-02-27 2005-09-08 Fujitsu Ltd Array type wavelength converter
US7092603B2 (en) 2004-03-03 2006-08-15 Fujitsu Limited Optical bridge for chip-to-board interconnection and methods of fabrication
JP4370945B2 (en) 2004-03-11 2009-11-25 ソニー株式会社 Measuring method of dielectric constant
US6996303B2 (en) 2004-03-12 2006-02-07 Fujitsu Limited Flexible optical waveguides for backplane optical interconnections
US7012419B2 (en) 2004-03-26 2006-03-14 Ut-Battelle, Llc Fast Faraday cup with high bandwidth
JP4336765B2 (en) 2004-04-05 2009-09-30 日本電気株式会社 Photodiode and manufacturing method thereof
US7330369B2 (en) 2004-04-06 2008-02-12 Bao Tran NANO-electronic memory array
US7019391B2 (en) 2004-04-06 2006-03-28 Bao Tran NANO IC packaging
JP4257741B2 (en) 2004-04-19 2009-04-22 三菱電機株式会社 Charged particle beam accelerator, particle beam irradiation medical system using charged particle beam accelerator, and method of operating particle beam irradiation medical system
US7428322B2 (en) 2004-04-20 2008-09-23 Bio-Rad Laboratories, Inc. Imaging method and apparatus
US7454095B2 (en) 2004-04-27 2008-11-18 California Institute Of Technology Integrated plasmon and dielectric waveguides
KR100586965B1 (en) 2004-05-27 2006-06-08 삼성전기주식회사 Light emitting diode device
US7130102B2 (en) 2004-07-19 2006-10-31 Mario Rabinowitz Dynamic reflection, illumination, and projection
ES2558978T3 (en) 2004-07-21 2016-02-09 Mevion Medical Systems, Inc. Programmable radiofrequency waveform generator for a synchro-cyclotron
GB0416600D0 (en) 2004-07-24 2004-08-25 Univ Newcastle A process for manufacturing micro- and nano-devices
US7375631B2 (en) 2004-07-26 2008-05-20 Lenovo (Singapore) Pte. Ltd. Enabling and disabling a wireless RFID portable transponder
US7791290B2 (en) 2005-09-30 2010-09-07 Virgin Islands Microsystems, Inc. Ultra-small resonating charged particle beam modulator
US7586097B2 (en) 2006-01-05 2009-09-08 Virgin Islands Microsystems, Inc. Switching micro-resonant structures using at least one director
US7626179B2 (en) 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
WO2006042239A2 (en) 2004-10-06 2006-04-20 The Regents Of The University Of California Cascaded cavity silicon raman laser with electrical modulation, switching, and active mode locking capability
US20060187794A1 (en) 2004-10-14 2006-08-24 Tim Harvey Uses of wave guided miniature holographic system
TWI253714B (en) 2004-12-21 2006-04-21 Phoenix Prec Technology Corp Method for fabricating a multi-layer circuit board with fine pitch
US7592255B2 (en) 2004-12-22 2009-09-22 Hewlett-Packard Development Company, L.P. Fabricating arrays of metallic nanostructures
US7508576B2 (en) 2005-01-20 2009-03-24 Intel Corporation Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon raman laser
US7466326B2 (en) 2005-01-21 2008-12-16 Konica Minolta Business Technologies, Inc. Image forming method and image forming apparatus
US7309953B2 (en) 2005-01-24 2007-12-18 Principia Lightworks, Inc. Electron beam pumped laser light source for projection television
US7305161B2 (en) 2005-02-25 2007-12-04 Board Of Regents, The University Of Texas System Encapsulated photonic crystal structures
US7120332B1 (en) 2005-03-31 2006-10-10 Eastman Kodak Company Placement of lumiphores within a light emitting resonator in a visual display with electro-optical addressing architecture
US7397055B2 (en) 2005-05-02 2008-07-08 Raytheon Company Smith-Purcell radiation source using negative-index metamaterial (NIM)
EP2027594B1 (en) 2005-07-08 2011-12-14 NexGen Semi Holding, Inc. Apparatus and method for controlled particle beam manufacturing of semiconductors
EP1913800A4 (en) 2005-07-27 2016-09-21 Wisconsin Alumni Res Found Nanoelectromechanical and microelectromechanical sensors and analyzers
WO2007064358A2 (en) 2005-09-30 2007-06-07 Virgin Islands Microsystems, Inc. Structures and methods for coupling energy from an electromagnetic wave
US8425858B2 (en) * 2005-10-14 2013-04-23 Morpho Detection, Inc. Detection apparatus and associated method
US7579609B2 (en) 2005-12-14 2009-08-25 Virgin Islands Microsystems, Inc. Coupling light of light emitting resonator to waveguide
US7547904B2 (en) 2005-12-22 2009-06-16 Palo Alto Research Center Incorporated Sensing photon energies emanating from channels or moving objects
US7619373B2 (en) 2006-01-05 2009-11-17 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7470920B2 (en) 2006-01-05 2008-12-30 Virgin Islands Microsystems, Inc. Resonant structure-based display
US7282776B2 (en) 2006-02-09 2007-10-16 Virgin Islands Microsystems, Inc. Method and structure for coupling two microcircuits
US7443358B2 (en) 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
US7605835B2 (en) 2006-02-28 2009-10-20 Virgin Islands Microsystems, Inc. Electro-photographic devices incorporating ultra-small resonant structures
US7623165B2 (en) 2006-02-28 2009-11-24 Aptina Imaging Corporation Vertical tri-color sensor
US20070200646A1 (en) 2006-02-28 2007-08-30 Virgin Island Microsystems, Inc. Method for coupling out of a magnetic device
US7862756B2 (en) 2006-03-30 2011-01-04 Asml Netherland B.V. Imprint lithography
US7558490B2 (en) 2006-04-10 2009-07-07 Virgin Islands Microsystems, Inc. Resonant detector for optical signals
US20070264023A1 (en) 2006-04-26 2007-11-15 Virgin Islands Microsystems, Inc. Free space interchip communications
US7511808B2 (en) 2006-04-27 2009-03-31 Hewlett-Packard Development Company, L.P. Analyte stages including tunable resonant cavities and Raman signal-enhancing structures
US20070258675A1 (en) 2006-05-05 2007-11-08 Virgin Islands Microsystems, Inc. Multiplexed optical communication between chips on a multi-chip module
US20070258720A1 (en) 2006-05-05 2007-11-08 Virgin Islands Microsystems, Inc. Inter-chip optical communication
US7442940B2 (en) 2006-05-05 2008-10-28 Virgin Island Microsystems, Inc. Focal plane array incorporating ultra-small resonant structures
US7557647B2 (en) 2006-05-05 2009-07-07 Virgin Islands Microsystems, Inc. Heterodyne receiver using resonant structures
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US7436177B2 (en) 2006-05-05 2008-10-14 Virgin Islands Microsystems, Inc. SEM test apparatus
US7710040B2 (en) 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7728702B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US7583370B2 (en) 2006-05-05 2009-09-01 Virgin Islands Microsystems, Inc. Resonant structures and methods for encoding signals into surface plasmons
US7359589B2 (en) 2006-05-05 2008-04-15 Virgin Islands Microsystems, Inc. Coupling electromagnetic wave through microcircuit
US20070258492A1 (en) 2006-05-05 2007-11-08 Virgin Islands Microsystems, Inc. Light-emitting resonant structure driving raman laser
US7586167B2 (en) 2006-05-05 2009-09-08 Virgin Islands Microsystems, Inc. Detecting plasmons using a metallurgical junction
US7569836B2 (en) 2006-05-05 2009-08-04 Virgin Islands Microsystems, Inc. Transmission of data between microchips using a particle beam
US7986113B2 (en) 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7554083B2 (en) 2006-05-05 2009-06-30 Virgin Islands Microsystems, Inc. Integration of electromagnetic detector on integrated chip
US7573045B2 (en) 2006-05-15 2009-08-11 Virgin Islands Microsystems, Inc. Plasmon wave propagation devices and methods
US7791053B2 (en) 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures

Patent Citations (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2634372A (en) * 1953-04-07 Super high-frequency electromag
US1948384A (en) * 1932-01-26 1934-02-20 Research Corp Method and apparatus for the acceleration of ions
US2307086A (en) * 1941-05-07 1943-01-05 Univ Leland Stanford Junior High frequency electrical apparatus
US2397905A (en) * 1944-08-07 1946-04-09 Int Harvester Co Thrust collar construction
US2932798A (en) * 1956-01-05 1960-04-12 Research Corp Imparting energy to charged particles
US3231779A (en) * 1962-06-25 1966-01-25 Gen Electric Elastic wave responsive apparatus
US3297905A (en) * 1963-02-06 1967-01-10 Varian Associates Electron discharge device of particular materials for stabilizing frequency and reducing magnetic field problems
US3315117A (en) * 1963-07-15 1967-04-18 Burton J Udelson Electrostatically focused electron beam phase shifter
US3571642A (en) * 1968-01-17 1971-03-23 Ca Atomic Energy Ltd Method and apparatus for interleaved charged particle acceleration
US3560694A (en) * 1969-01-21 1971-02-02 Varian Associates Microwave applicator employing flat multimode cavity for treating webs
US4661783A (en) * 1981-03-18 1987-04-28 The United States Of America As Represented By The Secretary Of The Navy Free electron and cyclotron resonance distributed feedback lasers and masers
US4570103A (en) * 1982-09-30 1986-02-11 Schoen Neil C Particle beam accelerators
US4652703A (en) * 1983-03-01 1987-03-24 Racal Data Communications Inc. Digital voice transmission having improved echo suppression
US4740973A (en) * 1984-05-21 1988-04-26 Madey John M J Free electron laser
US4819228A (en) * 1984-10-29 1989-04-04 Stratacom Inc. Synchronous packet voice/data communication system
US4912705A (en) * 1985-03-20 1990-03-27 International Mobile Machines Corporation Subscriber RF telephone system for providing multiple speech and/or data signals simultaneously over either a single or a plurality of RF channels
US4727550A (en) * 1985-09-19 1988-02-23 Chang David B Radiation source
US4740963A (en) * 1986-01-30 1988-04-26 Lear Siegler, Inc. Voice and data communication system
US4822436A (en) * 1986-03-07 1989-04-18 Northrop Corporation Apparatus for debulking and autoclaving laminates of complex shapes
US4813040A (en) * 1986-10-31 1989-03-14 Futato Steven P Method and apparatus for transmitting digital data and real-time digitalized voice information over a communications channel
US4809271A (en) * 1986-11-14 1989-02-28 Hitachi, Ltd. Voice and data multiplexer system
US4806859A (en) * 1987-01-27 1989-02-21 Ford Motor Company Resonant vibrating structures with driving sensing means for noncontacting position and pick up sensing
US4898022A (en) * 1987-02-09 1990-02-06 Tlv Co., Ltd. Steam trap operation detector
US5185073A (en) * 1988-06-21 1993-02-09 International Business Machines Corporation Method of fabricating nendritic materials
US4981371A (en) * 1989-02-17 1991-01-01 Itt Corporation Integrated I/O interface for communication terminal
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5187591A (en) * 1991-01-24 1993-02-16 Micom Communications Corp. System for transmitting and receiving aural information and modulated data
US5241244A (en) * 1991-03-07 1993-08-31 Proel Tecnologie S.P.A. Cyclotron resonance ion engine
US5283819A (en) * 1991-04-25 1994-02-01 Compuadd Corporation Computing and multimedia entertainment system
US5293175A (en) * 1991-07-19 1994-03-08 Conifer Corporation Stacked dual dipole MMDS feed
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5305312A (en) * 1992-02-07 1994-04-19 At&T Bell Laboratories Apparatus for interfacing analog telephones and digital data terminals to an ISDN line
US5282197A (en) * 1992-05-15 1994-01-25 International Business Machines Low frequency audio sub-channel embedded signalling
US5739579A (en) * 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
US5737458A (en) * 1993-03-29 1998-04-07 Martin Marietta Corporation Optical light pipe and microwave waveguide interconnects in multichip modules formed using adaptive lithography
US5485277A (en) * 1994-07-26 1996-01-16 Physical Optics Corporation Surface plasmon resonance sensor and methods for the utilization thereof
US5608263A (en) * 1994-09-06 1997-03-04 The Regents Of The University Of Michigan Micromachined self packaged circuits for high-frequency applications
US5882779A (en) * 1994-11-08 1999-03-16 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5504341A (en) * 1995-02-17 1996-04-02 Zimec Consulting, Inc. Producing RF electric fields suitable for accelerating atomic and molecular ions in an ion implantation system
US5604352A (en) * 1995-04-25 1997-02-18 Raychem Corporation Apparatus comprising voltage multiplication components
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
US5858799A (en) * 1995-10-25 1999-01-12 University Of Washington Surface plasmon resonance chemical electrode
US5889449A (en) * 1995-12-07 1999-03-30 Space Systems/Loral, Inc. Electromagnetic transmission line elements having a boundary between materials of high and low dielectric constants
US20020027481A1 (en) * 1995-12-07 2002-03-07 Fiedziuszko Slawomir J. Electromagnetic transmission line elements having a boundary between materials of high and low dielectric constants
US5889797A (en) * 1996-08-26 1999-03-30 The Regents Of The University Of California Measuring short electron bunch lengths using coherent smith-purcell radiation
US6180415B1 (en) * 1997-02-20 2001-01-30 The Regents Of The University Of California Plasmon resonant particles, methods and apparatus
US6040625A (en) * 1997-09-25 2000-03-21 I/O Sensors, Inc. Sensor package arrangement
US6195199B1 (en) * 1997-10-27 2001-02-27 Kanazawa University Electron tube type unidirectional optical amplifier
US6338968B1 (en) * 1998-02-02 2002-01-15 Signature Bioscience, Inc. Method and apparatus for detecting molecular binding events
US20020009723A1 (en) * 1998-02-02 2002-01-24 John Hefti Resonant bio-assay device and test system for detecting molecular binding events
US6524461B2 (en) * 1998-10-14 2003-02-25 Faraday Technology Marketing Group, Llc Electrodeposition of metals in small recesses using modulated electric fields
US20020017827A1 (en) * 1999-05-04 2002-02-14 Zuppero Anthony C. Pulsed electron jump generator
US6870438B1 (en) * 1999-11-10 2005-03-22 Kyocera Corporation Multi-layered wiring board for slot coupling a transmission line to a waveguide
US20030010979A1 (en) * 2000-01-14 2003-01-16 Fabrice Pardo Vertical metal-semiconductor microresonator photodetecting device and production method thereof
US6534766B2 (en) * 2000-03-28 2003-03-18 Kabushiki Kaisha Toshiba Charged particle beam system and pattern slant observing method
US6700748B1 (en) * 2000-04-28 2004-03-02 International Business Machines Corporation Methods for creating ground paths for ILS
US6504303B2 (en) * 2000-06-01 2003-01-07 Raytheon Company Optical magnetron for high efficiency production of optical radiation, and 1/2λ induced pi-mode operation
US20030016421A1 (en) * 2000-06-01 2003-01-23 Small James G. Wireless communication system with high efficiency/high power optical source
US6871025B2 (en) * 2000-06-15 2005-03-22 California Institute Of Technology Direct electrical-to-optical conversion and light modulation in micro whispering-gallery-mode resonators
US20020036264A1 (en) * 2000-07-27 2002-03-28 Mamoru Nakasuji Sheet beam-type inspection apparatus
US20020036121A1 (en) * 2000-09-08 2002-03-28 Ronald Ball Illumination system for escalator handrails
US6687034B2 (en) * 2001-03-23 2004-02-03 Microvision, Inc. Active tuning of a torsional resonant structure
US6525477B2 (en) * 2001-05-29 2003-02-25 Raytheon Company Optical magnetron generator
US20030012925A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing
US20030016412A1 (en) * 2001-07-17 2003-01-23 Alcatel Monitoring unit for optical burst mode signals
US20030034535A1 (en) * 2001-08-15 2003-02-20 Motorola, Inc. Mems devices suitable for integration with chip having integrated silicon and compound semiconductor devices, and methods for fabricating such devices
US20050054151A1 (en) * 2002-01-04 2005-03-10 Intersil Americas Inc. Symmetric inducting device for an integrated circuit having a ground shield
US7010183B2 (en) * 2002-03-20 2006-03-07 The Regents Of The University Of Colorado Surface plasmon devices
US7177515B2 (en) * 2002-03-20 2007-02-13 The Regents Of The University Of Colorado Surface plasmon devices
US6995406B2 (en) * 2002-06-10 2006-02-07 Tsuyoshi Tojo Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
US20040011432A1 (en) * 2002-07-17 2004-01-22 Podlaha Elizabeth J. Metal alloy electrodeposited microstructures
US20060050269A1 (en) * 2002-09-27 2006-03-09 Brownell James H Free electron laser, and associated components and methods
US20060007730A1 (en) * 2002-11-26 2006-01-12 Kabushiki Kaisha Toshiba Magnetic cell and magnetic memory
US20050045821A1 (en) * 2003-04-22 2005-03-03 Nobuharu Noji Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US20050023145A1 (en) * 2003-05-07 2005-02-03 Microfabrica Inc. Methods and apparatus for forming multi-layer structures using adhered masks
US20050045832A1 (en) * 2003-07-11 2005-03-03 Kelly Michael A. Non-dispersive charged particle energy analyzer
US20050062903A1 (en) * 2003-09-23 2005-03-24 Eastman Kodak Company Organic laser and liquid crystal display
US20050067286A1 (en) * 2003-09-26 2005-03-31 The University Of Cincinnati Microfabricated structures and processes for manufacturing same
US7498730B2 (en) * 2004-01-16 2009-03-03 C.R.F. Societa Consortile Per Azioni Light emitting device with photonic crystal
US20060060782A1 (en) * 2004-06-16 2006-03-23 Anjam Khursheed Scanning electron microscope
US20060018619A1 (en) * 2004-06-18 2006-01-26 Helffrich Jerome A System and Method for Detection of Fiber Optic Cable Using Static and Induced Charge
US7194798B2 (en) * 2004-06-30 2007-03-27 Hitachi Global Storage Technologies Netherlands B.V. Method for use in making a write coil of magnetic head
US20060062258A1 (en) * 2004-07-02 2006-03-23 Vanderbilt University Smith-Purcell free electron laser and method of operating same
US20060007700A1 (en) * 2004-07-06 2006-01-12 Au Optronics Corp. Backlight module capable of interchanging polarized states of light
US20060020667A1 (en) * 2004-07-22 2006-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic mail system and method for multi-geographical domains
US20060023991A1 (en) * 2004-07-29 2006-02-02 Akihiko Okubora Photoelectronic device and production method of the same
US20060035173A1 (en) * 2004-08-13 2006-02-16 Mark Davidson Patterning thin metal films by dry reactive ion etching
US20060045418A1 (en) * 2004-08-25 2006-03-02 Information And Communication University Research And Industrial Cooperation Group Optical printed circuit board and optical interconnection block using optical fiber bundle
US20090027280A1 (en) * 2005-05-05 2009-01-29 Frangioni John V Micro-scale resonant devices and methods of use
US20070003781A1 (en) * 2005-06-30 2007-01-04 De Rochemont L P Electrical components and method of manufacture
US20070013765A1 (en) * 2005-07-18 2007-01-18 Eastman Kodak Company Flexible organic laser printer
US7482185B2 (en) * 2005-08-03 2009-01-27 Industrial Technology Research Institute Vertical pixel structures for emi-flective display and methods for making the same
US20070034518A1 (en) * 2005-08-15 2007-02-15 Virgin Islands Microsystems, Inc. Method of patterning ultra-small structures
US7473917B2 (en) * 2005-12-16 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and method
US7646991B2 (en) * 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US7876793B2 (en) * 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
US7342441B2 (en) * 2006-05-05 2008-03-11 Virgin Islands Microsystems, Inc. Heterodyne receiver array using resonant structures
US7656094B2 (en) * 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US20080069509A1 (en) * 2006-09-19 2008-03-20 Virgin Islands Microsystems, Inc. Microcircuit using electromagnetic wave routing
US7659513B2 (en) * 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector

Also Published As

Publication number Publication date
WO2007081390A2 (en) 2007-07-19
TW200727579A (en) 2007-07-16
US7586097B2 (en) 2009-09-08
US8384042B2 (en) 2013-02-26
US20070154846A1 (en) 2007-07-05
WO2007081390A3 (en) 2009-04-16
US20150001424A1 (en) 2015-01-01
US20130161529A1 (en) 2013-06-27
US9076623B2 (en) 2015-07-07

Similar Documents

Publication Publication Date Title
US9076623B2 (en) Switching micro-resonant structures by modulating a beam of charged particles
US7619373B2 (en) Selectable frequency light emitter
US7470920B2 (en) Resonant structure-based display
US7646991B2 (en) Selectable frequency EMR emitter
US20070264023A1 (en) Free space interchip communications
US7986113B2 (en) Selectable frequency light emitter
US20080290782A1 (en) Field emission display having an improved emitter structure
JPH08510588A (en) Field emission device
KR19980032930A (en) Field emission thin film cold cathode and display device using same
US7710040B2 (en) Single layer construction for ultra small devices
US20070152781A1 (en) Switching micro-resonant structures by modulating a beam of charged particles
JP4354432B2 (en) Light emitting device
KR100708833B1 (en) Method of Increase of Resolution of Laser CRT
US7723698B2 (en) Top metal layer shield for ultra-small resonant structures
NL9000681A (en) FLAT DISPLAY SCREEN WITH A DEFLECTION MODULATION STRUCTURE.
EP0653102A1 (en) Display device of the flat-panel type comprising an electron transport duct and a segmented filament
KR20070056678A (en) Electron emission device and electron emission display device using the same
JP2005011784A (en) Electron emission type color lighting system
KR20050059541A (en) Field emission device and field emission display
KR20070046538A (en) Electron emission device and electron emission display device with the same

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED PLASMONICS, INC., VIRGIN ISLANDS, U.S.

Free format text: NUNC PRO TUNC ASSIGNMENT;ASSIGNOR:VIRGIN ISLAND MICROSYSTEMS, INC.;REEL/FRAME:029067/0657

Effective date: 20120921

AS Assignment

Owner name: ADVANCED PLASMONICS, INC., FLORIDA

Free format text: NUNC PRO TUNC ASSIGNMENT;ASSIGNOR:APPLIED PLASMONICS, INC.;REEL/FRAME:029095/0525

Effective date: 20120921

STCF Information on status: patent grant

Free format text: PATENTED CASE

REMI Maintenance fee reminder mailed
FPAY Fee payment

Year of fee payment: 4

SULP Surcharge for late payment
FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FEPP Fee payment procedure

Free format text: ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: SMAL); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

FEPP Fee payment procedure

Free format text: 7.5 YR SURCHARGE - LATE PMT W/IN 6 MO, SMALL ENTITY (ORIGINAL EVENT CODE: M2555); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2552); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

Year of fee payment: 8