US20090186212A1 - Non-volatile memory and methods for fabricating the same - Google Patents
Non-volatile memory and methods for fabricating the same Download PDFInfo
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- US20090186212A1 US20090186212A1 US12/015,939 US1593908A US2009186212A1 US 20090186212 A1 US20090186212 A1 US 20090186212A1 US 1593908 A US1593908 A US 1593908A US 2009186212 A1 US2009186212 A1 US 2009186212A1
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- 238000003860 storage Methods 0.000 claims abstract description 61
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
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- 238000007254 oxidation reaction Methods 0.000 claims description 6
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to a structure of an integrated circuit (IC) and methods for fabricating the same. More particularly, the present invention relates to a structure of a non-volatile memory and methods for fabricating the same.
- IC integrated circuit
- a non-volatile memory is characterized by maintaining stored data even when the power is off, and thus has become a mandatory device in many electronic products for providing normal operation when the electronic products are booted. Recently, the non-volatile memory has been widely adopted in personal computers (PCs) and other electronic equipment.
- PCs personal computers
- FIG. 1 is a schematic cross-sectional view of a conventional non-volatile memory.
- the non-volatile memory includes a substrate 100 , a source region 102 a and a drain region 102 b disposed in the substrate 100 , and a gate stacked structure 112 .
- the gate stacked structure 112 is constituted by a silicon oxide layer 104 , a silicon nitride layer 106 , another silicon oxide layer 108 , and a gate 110 all having a uniform thickness.
- one bit is respectively stored in the silicon nitride layer 106 around the source region 102 a and the drain region 102 b , such that a two-bit/cell memory is formed.
- the second-bit effect not only substantially implicates the operation of devices, but also reduces the device reliability. Moreover, because the second-bit effect reduces a sense margin and a Vt window for operating the left bit and the right bit, thus an operation of multi-level cell memory is more difficult.
- One of the current solutions is directed to increasing a drain voltage (Vd) for enhancing a drain-induced barrier lowering (DIBL), and thereby the increased barrier and the increased Vt arisen from the second-bit effect can be decreased. Nevertheless, since a dimension of the device is continuously shrinking, an excessive drain voltage will result in the operation difficulties as well.
- the present invention is directed to a non-volatile memory capable of reducing a second-bit effect and resolving problems derived therefrom.
- the present invention is further directed to several methods for fabricating a non-volatile memory capable of preventing cross interference of two bits in a memory cell of the non-volatile memory, such that the reliability of a memory device is enhanced.
- the present invention provides a non-volatile memory including a substrate, a first insulating layer, a charge storage layer, a second insulating layer, and a conductive layer.
- the first insulating layer is disposed over the substrate and disposed between the source/drain regions.
- the second insulationg layer is provided with a peripheral region and an internal region.
- the charge storage layer is disposed between the first insulating layer and the second insulating layer.
- the peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer.
- the conductive layer is disposed on the second insulating layer.
- the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom.
- a thickness of the first insulating layer ranges from 50 angstrom to 60 angstrom.
- a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
- the first insulating layer is a oxide layer that comprising silicon oxide.
- the charge storage layer is a dielectric material provides charge trapping ability and the dielectric material is nitride material that comprising silicon nitride.
- the second insulating layer is a oxide layer that comprising silicon oxide.
- the present invention further provides a method for fabricating a non-volatile memory.
- the method includes providing a substrate at first.
- a first insulating layer is formed over the substrate and disposed between two source/drain regions.
- a second insulationg layer is provided with a peripheral region and a internal region.
- a charge storage layer is formed between the first insulating layer and the second insulationg layer.
- the peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer.
- a conductive layer is formed over the second insulating layer.
- the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom.
- a thickness of the first insulating layer ranges from 50 angstrom to 60 angstrome.
- a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
- the first insulating layer is a oxide layer that comprising silicon oxide.
- the charge storage layer is a dielectric material provides charge trapping ability and the dielectric material is nitride material that comprising silicon nitride.
- the second insulating layer is a oxide layer that comprising silicon oxide.
- the present invention further provides a method for fabricating a non-volatile memory.
- the method includes forming a stacked structure and a cosuming layer in sequence over a substrate at first.
- a converting process is performed at a peripheral region of the consuming layer to form a first insulating layer.
- the consuming layer is removed.
- a conductive layer is formed over the stacked layer and the first insulating layer.
- the stacked structure comprises a second insulating layer, a charge storage layer, and a third insulating layer formed in sequence over the substrate.
- a thickness of the third insulating layer ranges from 80 angstrom to 100 angstrom, while a thickness of the first insulating layer ranges from 10 angstrom to 20 angstrom.
- a thickness of the second insulating layer ranges from 50 angstrom to 60 angstrom.
- a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
- the second insulating layer is a oxide layer that comprising silicon oxide.
- the charge storage layer is a dielectric material provides charge trapping ability and the dielectric material is nitride material that comprising silicon nitride.
- the third insulating layers is a oxide layer that comprising silicon oxide.
- the first insulating layers is a oxide layer that comprising silicon oxide.
- the consuming layer is a polysilicon layer.
- the converting process is an oxidation process.
- the present invention further provides a method for fabricating a non-volatile memory.
- the method includes forming a stacked structure and a cosuming layer in sequence over a substrate at first.
- a converting process is performed at a peripheral region of the consuming layer to form a first insulating layer.
- the cosuming layer is removed.
- a second insulating layer is conformally formed on the stacked structure and the first insulating layer.
- a conductive layer is formed on the second insulating layer.
- a thickness of the first insulating layer ranges from 10 angstrom to 20 angstrom, while a thickness of the second insulating layer ranges from 80 angstrom to 100 angstrom.
- the stacked structure comprises a third insulating layer and a charge storage layer formed in sequence over the substrate.
- a thickness of the third insulating layer ranges from 50 angstrom to 60 angstrom.
- a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
- the third insulating layer is a oxide layer that comprising silicon oxide.
- the charge storage layer is a dielectric material provides charge trapping ability, and the dielectric material is nitride material that comprising silicon nitride.
- the first insulating layer is a oxide layer that comprising silicon oxide and the second insulating layers is a oxide layer that comprising silicon oxide.
- the consuming layer is a polysilicon layer.
- the converting process is an oxidation process.
- the stacked structure comprising the insulating layer/the charge storage layer/the insulating layer is disposed between the conductive layer and the substrate.
- the insulating layer disposed between the conductive layer and the dielectric layer has a greater thickness of the peripheral region than the thickness of the internal region of the insulating layer. Accordingly, the thickness of the peripheral region of the insulating layer results in a greater DIBL, which effectively reduces the second-bit effect.
- the non-volatile memory of the present invention can be further applied to a multi-bit memory device.
- FIG. 1 is a schematic cross-sectional view of a conventional non-volatile memory.
- FIG. 2 is a schematic cross-sectional view of a non-volatile memory according to an embodiment of the present invention.
- FIGS. 3A and 3B are schematic views illustrating a programming operation of a right bit and a left bit of a memory cell of the non-volatile memory according to the present invention.
- FIGS. 4A and 4B are schematic views illustrating an erasing operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention.
- FIGS. 5A and 5B are schematic views illustrating a reading operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention.
- FIGS. 6A through 6F are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a first embodiment of the present invention.
- FIGS. 7A through 7G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a second embodiment of the present invention.
- FIGS. 8A through 8G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a third embodiment of the present invention.
- FIGS. 9A through 9G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a fourth embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view of a non-volatile memory according to an embodiment of the present invention.
- the non-volatile memory includes a substrate 200 , source/drain regions 202 a and 202 b , an insulating layer 204 , a charge storage layer 206 , another insulating layer 208 , and a conductive layer 210 .
- the substrate 200 is, for example, a silicon substrate or any other appropriate semiconductor substrates.
- the source/drain regions 202 a and 202 b are respectively disposed in the substrate 200 apart from each other.
- the insulating layer 204 of the non-volatile memory is disposed on the substrate 200 between the source/drain regions 202 a and 202 b .
- the insulating layer 204 is a oxide layer which a material of that is, for example, silicon oxide, and a thickness of the insulating layer 204 , for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom.
- the charge storage layer 206 is disposed on the insulating layer 204 .
- the charge storage layer 206 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example.
- a thickness of the charge storage layer 206 ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom.
- the insulating layer 208 is disposed on the charge storage layer 206 , and the insulating layer 208 is a oxide layer which a material of that is silicon oxide, for example.
- the conductive layer 210 is disposed on the insulating layer 208 , and a material of the conductive layer 210 is polysilicon, for example.
- the conductive layer 210 serves as a gate of the non-volatile memory.
- the difference between the non-volatile memory proposed in the present embodiment and the conventional non-volatile memory lies in that the insulating layer 208 of the non-volatile memory in the present embodiment is not in a uniform thickness.
- the thickness of the peripheral region (regions 207 a surrounded by dotted lines in FIG. 2 ) of the insulating layer 208 is greater than the thickness of the internal region (a region labeled as 207 b in FIG. 2 ) of the insulating layer 208 .
- the thickness of the internal region 207 b of the insulating layer 208 ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom.
- the thickness of the peripheral region 207 a of the insulating layer 208 ranges from 90 angstrom to 120 angstrom, for example.
- the non-uniform insulating layer 208 has the greater thickness of the peripheral region 207 a than at the internal region 207 b , a Vt of the non-volatile memory is affected by the thickness of the insulating layer 208 above the charge storage layer 206 , resulting in a relatively significant DIBL. Thereby, the second-bit effect is reduced, and a Vt window is increased as well.
- the non-volatile memory depicted in FIG. 2 is taken to elaborate a progranming operation of the non-volatile memory of the present invention, an erasing operation thereof, and a reading operation thereof.
- FIGS. 3A and 3B are schematic views illustrating the programming operation of a right bit and a left bit of a memory cell of the non-volatile memory according to the present invention.
- a voltage Vg is applied to the conductive layer 210
- a voltage Va is applied to the source/drain region 202 a
- a voltage Vb is applied to the source/drain region 202 b .
- the voltage Vg ranges from 5 V to 10 V
- the voltage Va is 0 V
- the voltage Vb ranges from 4 V to 6 V, for example.
- Said programming operation is performed by injecting channel hot electrons (CHEs).
- CHEs channel hot electrons
- the voltage Vg is applied to the conductive layer 210 , the voltage Va is applied to the source/drain region 202 a , and the voltage Vb is applied to the source/drain region 202 b .
- the voltage Vg ranges from 5 V to 10 V
- the voltage Va ranges from 4 V to 6 V
- the voltage Vb is 0 V, for example.
- Said programming operation is performed by injecting the CHEs as well.
- FIGS. 4A and 4B are schematic views illustrating the erasing operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention.
- the voltage Vg is applied to the conductive layer 210
- the voltage Va is applied to the source/drain region 202 a
- the voltage Vb is applied to the source/drain region 202 b .
- the voltage Vg ranges from ⁇ 10 V to ⁇ 5 V
- the voltage Va is 0 V
- the voltage Vb ranges from 4 V to 6 V, for example.
- Said erasing operation is performed through a band to band hot hole (BTBHH) effect.
- BTBHH band to band hot hole
- the voltage Vg is applied to the conductive layer 210
- the voltage Va is applied to the source/drain region 202 a
- the voltage Vb is applied to the source/drain region 202 b .
- the voltage Vg ranges from ⁇ 10 V to ⁇ 5 V
- the voltage Va ranges from 4 V to 6 V
- the voltage Vb is 0 V, for example.
- Said erasing operation is performed through the BTBHH effect as well.
- FIGS. 5A and 5B are schematic views illustrating the reading operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention.
- the voltage Vg is applied to the conductive layer 210
- the voltage Va is applied to the source/drain region 202 a
- the voltage Vb is applied to the source/drain region 202 b .
- the voltage Vg ranges from 3 V to 5 V
- the voltage Va ranges from 1 V to 1.8 V
- the voltage Vb is 0 V, for example.
- FIG. 5A when the reading operation of the right bit is performed, the voltage Vg is applied to the conductive layer 210 , the voltage Va is applied to the source/drain region 202 a , and the voltage Vb is applied to the source/drain region 202 b .
- the voltage Vg ranges from 3 V to 5 V
- the voltage Va ranges from 1 V to 1.8 V
- the voltage Vb is 0 V, for example.
- the voltage Vg is applied to the conductive layer 210 , the voltage Va is applied to the source/drain region 202 a , and the voltage Vb is applied to the source/drain region 202 b .
- the voltage Vg ranges from 3 V to 5 V
- the voltage Vb ranges from 1 V to 1.8 V
- the voltage Va is 0 V, for example.
- FIGS. 6A through 6F are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a first embodiment of the present invention.
- a substrate 600 is provided.
- the substrate 600 is, for example, a silicon substrate or any other appropriate semiconductor substrates.
- an insulating layer 602 is formed on the substrate 600 .
- the insulating layer 602 is a oxide layer which a material of that is, for example, silicon oxide, and the insulating layer 602 is formed by performing a chemical vapor deposition (CVD) process, for example.
- a thickness of the insulating layer 602 for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom.
- a charge storage layer 604 is formed on the insulating layer 602 .
- the charge storage layer 604 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example.
- the charge storage layer 604 is formed by performing the CVD process, for example.
- a thickness of the charge storage layer 604 ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom.
- another insulating layer 606 is formed on the charge storage layer 604 .
- a material of the insulating layer 606 is, for example, silicon oxide, and the insulating layer 606 is formed by performing the CVD process, for example.
- a thickness of the insulating layer 606 for example, ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom.
- a consuming layer 608 is formed on the insulating layer 606 by performing the CVD process, for example.
- the consuming layer 608 is a polysilicon layer, for example.
- a mask layer 610 is formed on the consuming layer 608 .
- a material of the mask layer 610 is, for example, silicon nitride, and a method for forming the mask layer 610 includes carrying out the CVD process, for example.
- a patterning process is performed on the mask layer 610 , the consuming layer 608 , the insulating layer 606 , the dielectric layer 604 , and the insulating layer 602 , so as to form a stacked structure 611 .
- an isolation layer 612 is formed on the substrate 600 atthe sides ofthe stacked structure 611 .
- amaterial of the isolation layer 612 is silicon oxide, for example.
- two source/drain regions 614 are formed in the substrate 600 below the isolation layer 612 .
- the source/drain regions 614 are formed by performing an ion implantation process, for example.
- a portion of the mask layer 610 is removed, so as to cover an internal region 615 of the consuming layer 608 and expose surfaces of a peripheral region 616 of the consuming layer 608 .
- the portion of the mask layer 610 is removed by performing an etching process, for example.
- a converting process which is, for example, an oxidation process is carried out, such that the consuming layer 608 of the peripheral region 616 is oxidized, and an insulating layer 618 is then formed.
- a thickness of the insulating layer 618 ranges from 10 angstrom to 20 angstrom, for example.
- the insulating layers 606 and 618 serve as an upper insulating layer above the dielectric layer 604 .
- one etching process is then carried out to remove the mask layer 610 and the polysilicon layer 608 disposed below the mask layer 610 .
- a conductive layer 620 is formed on the insulating layers 606 and 618 .
- a material of the conductive layer 620 is polysilicon, for example, and the conductive layer 620 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed.
- FIGS. 7A through 7G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a second embodiment of the present invention.
- a substrate 700 is provided.
- the substrate 700 is, for example, a silicon substrate or any other appropriate semiconductor substrates.
- an insulating layer 702 is formed on the substrate 700 .
- the insulating layer 702 is a oxide layer which a material of that is, for example, silicon oxide, and the insulating layer 702 is formed by performing the CVD process, for example.
- a thickness of the insulating layer 702 for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom.
- a charge storage layer 704 is formed on the insulating layer 702 .
- the charge storage layer 704 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example.
- the charge storage layer 704 is formed by performing the CVD process, for example.
- a thickness of the charge storage layer 704 ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom.
- a consuming layer 706 is formed on the charge storage layer 704 by performing the CVD process, for example.
- the consuming layer is a polysilicon layer, for example.
- a mask layer 708 is formed on the consuming layer 706 .
- a material of the mask layer 708 is, for example, silicon nitride, and a method for forming the mask layer 708 includes carrying out the CVD process, for example.
- the patterning process is performed on the mask layer 708 , the consuming layer 706 , the charge storage layer 704 , and the insulating layer 702 , so as to form a stacked structure 709 .
- an isolation layer 710 is formed on the substrate 700 at the sides of the stacked structure 709 .
- a material of the isolation layer 710 is silicon oxide, for example.
- two source/drain regions 712 are formed in the substrate 700 below the isolation layer 710 .
- the source/drain regions 712 are formed by performing the ion implantation process, for example.
- a portion of the mask layer 708 is removed, so as to cover an internal region 715 of the consuming layer 706 and expose surfaces of a peripheral region 714 of the consuming layer 706 .
- the portion of the mask layer 708 is removed by performing the etching process, for example.
- a converting process which is, for example, an oxidation process is carried out, such that the consuming layer 706 of the peripheral region 714 is oxidized, and an insulating layer 716 is then formed.
- a thickness of the insulating layer 716 ranges from 10 angstrom to 20 angstrom, for example.
- the etching process is performed to remove the mask layer 708 and the consuming layer 706 disposed below the mask layer 708 .
- the insulating layer 718 is a oxide layer which a material of that is, for example, silicon oxide, and the insulating layer 718 is formed by performing the CVD process, for example.
- a thickness of the insulating layer 718 ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom.
- the insulating layers 716 and 718 serve as the upper insulating layer above the charge storage layer 704 .
- a conductive layer 720 is formed on the insulating layer 718 .
- a material of the conductive layer 720 is polysilicon, for example,. and the conductive layer 720 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed.
- FIGS. 8A through 8G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a third embodiment of the present invention.
- a substrate 800 is provided.
- the substrate 800 is, for example, a silicon substrate or any other appropriate semiconductor substrates.
- an insulating layer 802 is formed on the substrate 800 .
- the insulating layer 802 is a oxide layer which a material of that is, for example, silicon oxide, and the insulating layer 802 is formed by performing the CVD process, for example.
- a thickness of the insulating layer 802 for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom.
- a charge storage layer 804 is formed on the insulating layer 802 .
- the charge storage layer 804 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example.
- the charge storage layer 804 is formed by performing the CVD process, for example. Athickness of the charge storage layer 804 , for example, ranges from 60 angstrom to 80 angstrom, and is preferably abour 70 angstrom.
- another insulating layer 806 is formed on the charge storage layer 804 .
- the insulating layer 806 is a oxide layer which a material of that is, for example, silicon oxide, and the insulating layer 806 is formed by performing the CVD process, for example.
- a thickness of the insulating layer 806 ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom.
- a mask layer 808 is formed on the insulating layer 806 .
- a material of the mask layer 808 is, for example, silicon nitride, and a method for forming the mask layer 808 includes carrying out the CVD process, for example.
- the patterning process is performed on the mask layer 808 , the insulating layer 806 , the charge storage layer 804 , and the insulating layer 602 , so as to form a stacked structure 809 .
- an isolation layer 810 is formed on the substrate 800 at the sides of the stacked structure 809 .
- a material of the isolation layer 810 is silicon oxide, for example.
- two source/drain regions 812 are formed in the substrate 800 below the isolation layer 810 .
- the source/drain regions 812 are formed by performing the ion implantation process, for example.
- a portion of the mask layer 808 is removed, so as to cover a internal region 815 of the second insulating layer 806 and expose surfaces of a peripheral region 814 of the insulating layer 806 .
- the portion of the mask layer 808 are removed by performing the etching process, for example.
- another insulating layer 816 is formed above the mask layer 808 and the peripheral region 814 of the insulating layer 806 .
- a material of the insulating layer 816 is, for example, silicon oxide, and the insulating layer 816 is formed by performing the CVD process, for example.
- a portion of the insulating layer 816 is removed, such that an insulating layer 818 remains.
- the insulating layer 818 covers the side regions 814 ofthe insulating layer 806 .
- a thickness ofthe insulating layer 818 ranges from 10 angstrom to 20 angstrom, for example.
- the insulating layers 806 and 818 serve as the upper insulating layer above the charge storage layer 804 .
- the etching process is performed to remove the mask layer 808 .
- a conductive layer 820 is formed on the insulating layers 806 and 818 .
- a material of the conductive layer 820 is polysilicon, for example, and the conductive layer 820 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed.
- FIGS. 9A through 9G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a fourth embodiment of the present invention.
- a substrate 900 is provided.
- the substrate 900 is, for example, a silicon substrate or any other appropriate semiconductor substrates.
- an insulating layer 902 is formed on the substrate 900 .
- the insulating layer 902 is a oxide layer which material of that is, for example, silicon oxide, and the insulating layer 902 is formed by performing the CVD process, for example.
- a thickness of the insulating layer 902 for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom.
- a charge storage layer 904 is formed on the insulating layer 902 .
- the charge storage layer 904 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example.
- the charge storage layer 904 is formed by performing the CVD process, for example.
- a thickness of the charge storage layer 904 ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom.
- another insulating layer 906 is formed on the charge storage layer 904 .
- the insulating layer 906 is a oxide layer which a material of that is, for example, silicon oxide, and the insulating layer 906 is formed by performing the CVD process, for example.
- a thickness of the insulating layer 906 for example, ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom.
- a consuming layer 908 is formed on the insulating layer 906 by performing the CVD process, for example.
- the consuming layer is a polysilicon layer, for example.
- a mask layer 910 is formed on the consuming layer 908 .
- a material of the mask layer 910 is, for example, silicon nitride, and a method for forming the mask layer 910 includes carrying out the CVD process, for example.
- the patterning process is performed on the mask layer 910 , the consuming layer 908 , the insulating layer 906 , the charge storage layer 904 , and the insulating layer 902 , so as to form a stacked structure 911 .
- a portion of the mask layer 910 is removed, so as to cover a intemal region 913 of the consuming layer 908 and expose surfaces of a peripheral region 912 of the consuming layer 908 .
- the portion of the mask layer 910 is removed by performing the etching process, for example.
- the converting process which is, for example, an oxidation process is then performed, such that the consuming layer 908 of the peripheral region 912 is oxidized for forming an insulating layer 914 .
- Another insulating layer 916 is also formed on a surface of the substrate 900 at the sides of the stacked structure 911 .
- two source/drain regions 918 are formed in the substrate 900 below the insulating layer 916 .
- the source/drain regions 918 are formed by performing the ion implantation process, for example.
- another insulating layer 920 is conformally formed above the mask layer 910 , the insulating layer 914 , and the insulating layer 916 .
- the insulating layer 920 is a oxide layer which a material of that is, for example, silicon oxide, and the insulating layer 920 is formed by performing the CVD process, for example.
- a portion of the insulating layer 920 is removed, such that an insulating layer 922 remains.
- the insulating layer 922 and the insulating layer 914 together construct another insulating layer 924 .
- a thickness of the insulating layer 924 ranges from 10 angstrom to 20 angstrom, for example.
- the insulating layers 906 and 924 serve as the upper insulating layer above the charge storage layer 904 .
- the insulating layers 922 and 916 together form a so-called isolation layer 926 .
- the mask layer 910 is removed.
- a conductive layer 928 is formed on the insulating layer 924 and the consuming layer 908 .
- a material of the conductive layer 928 is polysilicon, for example, and the conductive layer 928 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed.
- the stacked structure comprising the insulating layer/the charge storage layer/the insulating layer is disposed between the conductive layer and the substrate.
- the insulating layer disposed between the conductive layer and the charge storage layer has a greater thickness of the peripheral region than the thickness of the internal region of the insulating layer. Accordingly, the thickness of the peripheral region of the insulating layer results in a greater DIBL, which effectively reduces the second-bit effect and resolves the problems derived therefrom.
- the device reliability and the Vt window for operating the left bit and the right bit are increased.
- the non-volatile memory of the present invention can be applied to a multi-bit memory device as well.
Abstract
A non-volatile memory including a substrate, source/drain regions, a first insulating layer, a charge storage layer, a second insulating layer, and a conductive layer is provided. The source/drain regions are respectively disposed in the substrate apart from each other. The first insulating layer is disposed on the substrate between the source/drain regions. The charge storage layer is disposed on the first insulating layer. The second insulating layer is disposed on the charge storage layer, and a thickness of a peripheral region of the second insulating layer is greater than a thickness of an internal region of the second insulating layer. The conductive layer is disposed on the second insulating layer.
Description
- 1. Field of the Invention
- The present invention relates to a structure of an integrated circuit (IC) and methods for fabricating the same. More particularly, the present invention relates to a structure of a non-volatile memory and methods for fabricating the same.
- 2. Description of Related Art
- A non-volatile memory is characterized by maintaining stored data even when the power is off, and thus has become a mandatory device in many electronic products for providing normal operation when the electronic products are booted. Recently, the non-volatile memory has been widely adopted in personal computers (PCs) and other electronic equipment.
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FIG. 1 is a schematic cross-sectional view of a conventional non-volatile memory. Referring toFIG. 1 , the non-volatile memory includes asubstrate 100, asource region 102 a and adrain region 102 b disposed in thesubstrate 100, and a gate stackedstructure 112. The gate stackedstructure 112 is constituted by asilicon oxide layer 104, asilicon nitride layer 106, anothersilicon oxide layer 108, and agate 110 all having a uniform thickness. In the conventional non-volatile memory, one bit is respectively stored in thesilicon nitride layer 106 around thesource region 102 a and thedrain region 102 b, such that a two-bit/cell memory is formed. - However, when programming the conventional two-bit/cell non-volatile memory, the two bits in the same memory cell are mutually affected. If one bit has been stored in a part near the drain region in the conventional non-volatile memory, a second-bit effect occurs when a reading operation is performed, such that a voltage in the portion where a high current is expected may drop. In other words, when the memory cell is being read, the existing bit poses a direct impact on the memory cell, thus increasing a barrier and a threshold voltage (Vt) for reading.
- In view of the above, the second-bit effect not only substantially implicates the operation of devices, but also reduces the device reliability. Moreover, because the second-bit effect reduces a sense margin and a Vt window for operating the left bit and the right bit, thus an operation of multi-level cell memory is more difficult.
- One of the current solutions is directed to increasing a drain voltage (Vd) for enhancing a drain-induced barrier lowering (DIBL), and thereby the increased barrier and the increased Vt arisen from the second-bit effect can be decreased. Nevertheless, since a dimension of the device is continuously shrinking, an excessive drain voltage will result in the operation difficulties as well.
- In light of the foregoing, the present invention is directed to a non-volatile memory capable of reducing a second-bit effect and resolving problems derived therefrom.
- The present invention is further directed to several methods for fabricating a non-volatile memory capable of preventing cross interference of two bits in a memory cell of the non-volatile memory, such that the reliability of a memory device is enhanced.
- The present invention provides a non-volatile memory including a substrate, a first insulating layer, a charge storage layer, a second insulating layer, and a conductive layer. The first insulating layer is disposed over the substrate and disposed between the source/drain regions. The second insulationg layer is provided with a peripheral region and an internal region. The charge storage layer is disposed between the first insulating layer and the second insulating layer. And, the peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer. The conductive layer is disposed on the second insulating layer.
- According to an embodiment of the present invention, the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom. A thickness of the first insulating layer ranges from 50 angstrom to 60 angstrom. A thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
- According to an embodiment of the present invention, the first insulating layer is a oxide layer that comprising silicon oxide. The charge storage layer is a dielectric material provides charge trapping ability and the dielectric material is nitride material that comprising silicon nitride. The second insulating layer is a oxide layer that comprising silicon oxide.
- The present invention further provides a method for fabricating a non-volatile memory. The method includes providing a substrate at first. A first insulating layer is formed over the substrate and disposed between two source/drain regions. A second insulationg layer is provided with a peripheral region and a internal region. A charge storage layer is formed between the first insulating layer and the second insulationg layer. The peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer. A conductive layer is formed over the second insulating layer.
- According to another embodiment of the present invention, the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom. A thickness of the first insulating layer ranges from 50 angstrom to 60 angstrome. A thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
- According to an embodiment of the present invention, the first insulating layer is a oxide layer that comprising silicon oxide. The charge storage layer is a dielectric material provides charge trapping ability and the dielectric material is nitride material that comprising silicon nitride. The second insulating layer is a oxide layer that comprising silicon oxide.
- The present invention further provides a method for fabricating a non-volatile memory. The method includes forming a stacked structure and a cosuming layer in sequence over a substrate at first. A converting process is performed at a peripheral region of the consuming layer to form a first insulating layer. The consuming layer is removed. A conductive layer is formed over the stacked layer and the first insulating layer.
- According to another embodiment of the present invention, the stacked structure comprises a second insulating layer, a charge storage layer, and a third insulating layer formed in sequence over the substrate. A thickness of the third insulating layer ranges from 80 angstrom to 100 angstrom, while a thickness of the first insulating layer ranges from 10 angstrom to 20 angstrom. A thickness of the second insulating layer ranges from 50 angstrom to 60 angstrom. A thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
- According to another embodiment of the present invention, the second insulating layer is a oxide layer that comprising silicon oxide. The charge storage layer is a dielectric material provides charge trapping ability and the dielectric material is nitride material that comprising silicon nitride. The third insulating layers is a oxide layer that comprising silicon oxide.
- According to another embodiment of the present invention, the first insulating layers is a oxide layer that comprising silicon oxide.
- According to another embodiment of the present invention, the consuming layer is a polysilicon layer.
- According to another embodiment of the present invention, the converting process is an oxidation process.
- The present invention further provides a method for fabricating a non-volatile memory. The method includes forming a stacked structure and a cosuming layer in sequence over a substrate at first. A converting process is performed at a peripheral region of the consuming layer to form a first insulating layer. The cosuming layer is removed. A second insulating layer is conformally formed on the stacked structure and the first insulating layer. A conductive layer is formed on the second insulating layer.
- According to another embodiment of the present invention, a thickness of the first insulating layer ranges from 10 angstrom to 20 angstrom, while a thickness of the second insulating layer ranges from 80 angstrom to 100 angstrom.
- According to another embodiment of the present invention, the stacked structure comprises a third insulating layer and a charge storage layer formed in sequence over the substrate. A thickness of the third insulating layer ranges from 50 angstrom to 60 angstrom. A thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom. The third insulating layer is a oxide layer that comprising silicon oxide. The charge storage layer is a dielectric material provides charge trapping ability, and the dielectric material is nitride material that comprising silicon nitride.
- According to another embodiment of the present invention, the first insulating layer is a oxide layer that comprising silicon oxide and the second insulating layers is a oxide layer that comprising silicon oxide.
- According to another embodiment of the present invention, the consuming layer is a polysilicon layer.
- According to another embodiment of the present invention, the converting process is an oxidation process.
- In the present invention, the stacked structure comprising the insulating layer/the charge storage layer/the insulating layer is disposed between the conductive layer and the substrate. The insulating layer disposed between the conductive layer and the dielectric layer has a greater thickness of the peripheral region than the thickness of the internal region of the insulating layer. Accordingly, the thickness of the peripheral region of the insulating layer results in a greater DIBL, which effectively reduces the second-bit effect. On the other hand, the non-volatile memory of the present invention can be further applied to a multi-bit memory device.
- In order to make the above and other objects, features and advantages of the present invention more comprehensible, several embodiments accompanied with figures are described in detail below.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
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FIG. 1 is a schematic cross-sectional view of a conventional non-volatile memory. -
FIG. 2 is a schematic cross-sectional view of a non-volatile memory according to an embodiment of the present invention. -
FIGS. 3A and 3B are schematic views illustrating a programming operation of a right bit and a left bit of a memory cell of the non-volatile memory according to the present invention. -
FIGS. 4A and 4B are schematic views illustrating an erasing operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention. -
FIGS. 5A and 5B are schematic views illustrating a reading operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention. -
FIGS. 6A through 6F are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a first embodiment of the present invention. -
FIGS. 7A through 7G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a second embodiment of the present invention. -
FIGS. 8A through 8G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a third embodiment of the present invention. -
FIGS. 9A through 9G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a fourth embodiment of the present invention. -
FIG. 2 is a schematic cross-sectional view of a non-volatile memory according to an embodiment of the present invention. - Referring to
FIG. 2 , the non-volatile memory includes asubstrate 200, source/drain regions layer 204, acharge storage layer 206, another insulatinglayer 208, and aconductive layer 210. Thesubstrate 200 is, for example, a silicon substrate or any other appropriate semiconductor substrates. The source/drain regions substrate 200 apart from each other. - The insulating
layer 204 of the non-volatile memory is disposed on thesubstrate 200 between the source/drain regions layer 204 is a oxide layer which a material of that is, for example, silicon oxide, and a thickness of the insulatinglayer 204, for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom. Thecharge storage layer 206 is disposed on the insulatinglayer 204. Here, thecharge storage layer 206 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example. A thickness of thecharge storage layer 206, for example, ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom. The insulatinglayer 208 is disposed on thecharge storage layer 206, and the insulatinglayer 208 is a oxide layer which a material of that is silicon oxide, for example. Theconductive layer 210 is disposed on the insulatinglayer 208, and a material of theconductive layer 210 is polysilicon, for example. Here, theconductive layer 210 serves as a gate of the non-volatile memory. - Note that the difference between the non-volatile memory proposed in the present embodiment and the conventional non-volatile memory lies in that the insulating
layer 208 of the non-volatile memory in the present embodiment is not in a uniform thickness. The thickness of the peripheral region (regions 207 a surrounded by dotted lines inFIG. 2 ) of the insulatinglayer 208 is greater than the thickness of the internal region (a region labeled as 207 b inFIG. 2 ) of the insulatinglayer 208. Here, the thickness of theinternal region 207 b of the insulatinglayer 208, for example, ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom. By contrast, the thickness of theperipheral region 207 a of the insulatinglayer 208 ranges from 90 angstrom to 120 angstrom, for example. - It should be noted that since the non-uniform insulating
layer 208 has the greater thickness of theperipheral region 207 a than at theinternal region 207 b, a Vt of the non-volatile memory is affected by the thickness of the insulatinglayer 208 above thecharge storage layer 206, resulting in a relatively significant DIBL. Thereby, the second-bit effect is reduced, and a Vt window is increased as well. - The non-volatile memory depicted in
FIG. 2 is taken to elaborate a progranming operation of the non-volatile memory of the present invention, an erasing operation thereof, and a reading operation thereof. - Please refer to
FIGS. 3A and 3B which are schematic views illustrating the programming operation of a right bit and a left bit of a memory cell of the non-volatile memory according to the present invention. As shown inFIG. 3A , when the programming operation of the right bit is performed, a voltage Vg is applied to theconductive layer 210, a voltage Va is applied to the source/drain region 202 a, and a voltage Vb is applied to the source/drain region 202 b. Here, the voltage Vg ranges from 5 V to 10 V, the voltage Va is 0 V, and the voltage Vb ranges from 4 V to 6 V, for example. Said programming operation is performed by injecting channel hot electrons (CHEs). In addition, as indicated inFIG. 3B , when the programming operation of the left bit is performed, the voltage Vg is applied to theconductive layer 210, the voltage Va is applied to the source/drain region 202 a, and the voltage Vb is applied to the source/drain region 202 b. Here, the voltage Vg ranges from 5 V to 10 V, the voltage Va ranges from 4 V to 6 V, and the voltage Vb is 0 V, for example. Said programming operation is performed by injecting the CHEs as well. - Please refer to
FIGS. 4A and 4B which are schematic views illustrating the erasing operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention. As shown inFIG. 4A , when the erasing operation of the right bit is performed, the voltage Vg is applied to theconductive layer 210, the voltage Va is applied to the source/drain region 202 a, and the voltage Vb is applied to the source/drain region 202 b. Here, the voltage Vg ranges from −10 V to −5 V, the voltage Va is 0 V, and the voltage Vb ranges from 4 V to 6 V, for example. Said erasing operation is performed through a band to band hot hole (BTBHH) effect. In addition, as indicated inFIG. 4B , when the erasing operation of the left bit is performed, the voltage Vg is applied to theconductive layer 210, the voltage Va is applied to the source/drain region 202 a, and the voltage Vb is applied to the source/drain region 202 b. Here, the voltage Vg ranges from −10 V to −5 V, the voltage Va ranges from 4 V to 6 V, and the voltage Vb is 0 V, for example. Said erasing operation is performed through the BTBHH effect as well. - Please refer to
FIGS. 5A and 5B which are schematic views illustrating the reading operation of the right bit and the left bit of the memory cell of the non-volatile memory according to the present invention. As shown inFIG. 5A , when the reading operation of the right bit is performed, the voltage Vg is applied to theconductive layer 210, the voltage Va is applied to the source/drain region 202 a, and the voltage Vb is applied to the source/drain region 202 b. Here, the voltage Vg ranges from 3 V to 5 V, the voltage Va ranges from 1 V to 1.8 V, and the voltage Vb is 0 V, for example. In addition, as indicated inFIG. 5B , when the reading operation of the left bit is performed, the voltage Vg is applied to theconductive layer 210, the voltage Va is applied to the source/drain region 202 a, and the voltage Vb is applied to the source/drain region 202 b. Here, the voltage Vg ranges from 3 V to 5 V, the voltage Vb ranges from 1 V to 1.8 V, and the voltage Va is 0 V, for example. - Next, several embodiments are enumerated hereinafter for elaborating methods for fabricating the non-volatile memory of the present invention.
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FIGS. 6A through 6F are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a first embodiment of the present invention. - First, as shown in
FIG. 6A , asubstrate 600 is provided. Thesubstrate 600 is, for example, a silicon substrate or any other appropriate semiconductor substrates. Next, an insulatinglayer 602 is formed on thesubstrate 600. The insulatinglayer 602 is a oxide layer which a material of that is, for example, silicon oxide, and the insulatinglayer 602 is formed by performing a chemical vapor deposition (CVD) process, for example. A thickness of the insulatinglayer 602, for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom. Next, acharge storage layer 604 is formed on the insulatinglayer 602. Thecharge storage layer 604 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example. Thecharge storage layer 604 is formed by performing the CVD process, for example. A thickness of thecharge storage layer 604, for example, ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom. Thereafter, another insulatinglayer 606 is formed on thecharge storage layer 604. A material of the insulatinglayer 606 is, for example, silicon oxide, and the insulatinglayer 606 is formed by performing the CVD process, for example. A thickness of the insulatinglayer 606, for example, ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom. - Thereafter, referring to
FIG. 6A , a consuminglayer 608 is formed on the insulatinglayer 606 by performing the CVD process, for example. The consuminglayer 608 is a polysilicon layer, for example. After that, amask layer 610 is formed on the consuminglayer 608. A material of themask layer 610 is, for example, silicon nitride, and a method for forming themask layer 610 includes carrying out the CVD process, for example. - Next, referring to
FIG. 6B , a patterning process is performed on themask layer 610, the consuminglayer 608, the insulatinglayer 606, thedielectric layer 604, and the insulatinglayer 602, so as to form astacked structure 611. - Afterwards, referring to
FIG. 6C , anisolation layer 612 is formed on thesubstrate 600 atthe sides ofthestacked structure 611. Here, amaterial of theisolation layer 612 is silicon oxide, for example. Thereafter, two source/drain regions 614 are formed in thesubstrate 600 below theisolation layer 612. The source/drain regions 614 are formed by performing an ion implantation process, for example. - Next, referring to
FIG. 6D , a portion of themask layer 610 is removed, so as to cover aninternal region 615 of the consuminglayer 608 and expose surfaces of aperipheral region 616 of the consuminglayer 608. The portion of themask layer 610 is removed by performing an etching process, for example. - After that, referring to
FIG. 6E , a converting process which is, for example, an oxidation process is carried out, such that the consuminglayer 608 of theperipheral region 616 is oxidized, and an insulatinglayer 618 is then formed. A thickness of the insulatinglayer 618 ranges from 10 angstrom to 20 angstrom, for example. Here, the insulatinglayers dielectric layer 604. After the formation of the insulatinglayer 618, one etching process is then carried out to remove themask layer 610 and thepolysilicon layer 608 disposed below themask layer 610. - Thereafter, referring to
FIG. 6F , aconductive layer 620 is formed on the insulatinglayers conductive layer 620 is polysilicon, for example, and theconductive layer 620 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed. -
FIGS. 7A through 7G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a second embodiment of the present invention. - First, as shown in
FIG. 7A , asubstrate 700 is provided. Thesubstrate 700 is, for example, a silicon substrate or any other appropriate semiconductor substrates. Next, an insulatinglayer 702 is formed on thesubstrate 700. The insulatinglayer 702 is a oxide layer which a material of that is, for example, silicon oxide, and the insulatinglayer 702 is formed by performing the CVD process, for example. A thickness of the insulatinglayer 702, for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom. - Thereafter, referring to
FIG. 7A , acharge storage layer 704 is formed on the insulatinglayer 702. Thecharge storage layer 704 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example. Thecharge storage layer 704 is formed by performing the CVD process, for example. A thickness of thecharge storage layer 704, for example, ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom. Afterwards, a consuminglayer 706 is formed on thecharge storage layer 704 by performing the CVD process, for example. The consuming layer is a polysilicon layer, for example. After that, amask layer 708 is formed on the consuminglayer 706. A material of themask layer 708 is, for example, silicon nitride, and a method for forming themask layer 708 includes carrying out the CVD process, for example. - Next, referring to
FIG. 7B , the patterning process is performed on themask layer 708, the consuminglayer 706, thecharge storage layer 704, and the insulatinglayer 702, so as to form astacked structure 709. - Afterwards, referring to
FIG. 7C , anisolation layer 710 is formed on thesubstrate 700 at the sides of the stackedstructure 709. Here, a material of theisolation layer 710 is silicon oxide, for example. Thereafter, two source/drain regions 712 are formed in thesubstrate 700 below theisolation layer 710. The source/drain regions 712 are formed by performing the ion implantation process, for example. - Next, referring to
FIG. 7D , a portion of themask layer 708 is removed, so as to cover aninternal region 715 of the consuminglayer 706 and expose surfaces of aperipheral region 714 of the consuminglayer 706. The portion of themask layer 708 is removed by performing the etching process, for example. - After that, referring to
FIG. 7E , a converting process which is, for example, an oxidation process is carried out, such that the consuminglayer 706 of theperipheral region 714 is oxidized, and an insulatinglayer 716 is then formed. A thickness of the insulatinglayer 716 ranges from 10 angstrom to 20 angstrom, for example. Next, the etching process is performed to remove themask layer 708 and the consuminglayer 706 disposed below themask layer 708. - Thereafter, referring to
FIG. 7F , another insulatinglayer 718 is conformally formed above the insulatinglayer 716 and thecharge storage layer 704. The insulatinglayer 718 is a oxide layer which a material of that is, for example, silicon oxide, and the insulatinglayer 718 is formed by performing the CVD process, for example. A thickness of the insulatinglayer 718, for example, ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom. Here, the insulatinglayers charge storage layer 704. - After that, referring to
FIG. 7G , aconductive layer 720 is formed on the insulatinglayer 718. A material of theconductive layer 720 is polysilicon, for example,. and theconductive layer 720 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed. -
FIGS. 8A through 8G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a third embodiment of the present invention. - First, as shown in
FIG. 8A , asubstrate 800 is provided. Thesubstrate 800 is, for example, a silicon substrate or any other appropriate semiconductor substrates. Next, an insulatinglayer 802 is formed on thesubstrate 800. The insulatinglayer 802 is a oxide layer which a material of that is, for example, silicon oxide, and the insulatinglayer 802 is formed by performing the CVD process, for example. A thickness of the insulatinglayer 802, for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom. - Thereafter, referring to
FIG. 8A , acharge storage layer 804 is formed on the insulatinglayer 802. Thecharge storage layer 804 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example. Thecharge storage layer 804 is formed by performing the CVD process, for example. Athickness of thecharge storage layer 804, for example, ranges from 60 angstrom to 80 angstrom, and is preferably abour 70 angstrom. Thereafter, another insulatinglayer 806 is formed on thecharge storage layer 804. The insulatinglayer 806 is a oxide layer which a material of that is, for example, silicon oxide, and the insulatinglayer 806 is formed by performing the CVD process, for example. A thickness of the insulatinglayer 806, for example, ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom. After that, amask layer 808 is formed on the insulatinglayer 806. A material of themask layer 808 is, for example, silicon nitride, and a method for forming themask layer 808 includes carrying out the CVD process, for example. - Next, referring to
FIG. 8B , the patterning process is performed on themask layer 808, the insulatinglayer 806, thecharge storage layer 804, and the insulatinglayer 602, so as to form astacked structure 809. - Afterwards, referring to
FIG. 8C , anisolation layer 810 is formed on thesubstrate 800 at the sides of the stackedstructure 809. Here, a material of theisolation layer 810 is silicon oxide, for example. Thereafter, two source/drain regions 812 are formed in thesubstrate 800 below theisolation layer 810. The source/drain regions 812 are formed by performing the ion implantation process, for example. - Afterwards, referring to
FIG. 8D , a portion of themask layer 808 is removed, so as to cover ainternal region 815 of the second insulatinglayer 806 and expose surfaces of aperipheral region 814 of the insulatinglayer 806. The portion of themask layer 808 are removed by performing the etching process, for example. - Next, referring to
FIG. 8E , another insulatinglayer 816 is formed above themask layer 808 and theperipheral region 814 of the insulatinglayer 806. A material of the insulatinglayer 816 is, for example, silicon oxide, and the insulatinglayer 816 is formed by performing the CVD process, for example. - After that, referring to
FIG. 8F , a portion of the insulatinglayer 816 is removed, such that an insulatinglayer 818 remains. The insulatinglayer 818 covers theside regions 814ofthe insulating layer 806. A thickness ofthe insulatinglayer 818 ranges from 10 angstrom to 20 angstrom, for example. Here, the insulatinglayers charge storage layer 804. After the formation of the insulatinglayer 818, the etching process is performed to remove themask layer 808. - Thereafter, referring to
FIG. 8G , aconductive layer 820 is formed on the insulatinglayers conductive layer 820 is polysilicon, for example, and theconductive layer 820 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed. -
FIGS. 9A through 9G are cross-sectional views illustrating a process of fabricating the non-volatile memory according to a fourth embodiment of the present invention. - First, as shown in
FIG. 9A , asubstrate 900 is provided. Thesubstrate 900 is, for example, a silicon substrate or any other appropriate semiconductor substrates. Next, an insulatinglayer 902 is formed on thesubstrate 900. The insulatinglayer 902 is a oxide layer which material of that is, for example, silicon oxide, and the insulatinglayer 902 is formed by performing the CVD process, for example. A thickness of the insulatinglayer 902, for example, ranges from 50 angstrom to 60 angstrom, and is preferably about 54 angstrom. Next, acharge storage layer 904 is formed on the insulatinglayer 902. Thecharge storage layer 904 is a dielectric material provides charge trapping ability, and the dielectric material is nitride material which is silicon nitride, for example. Thecharge storage layer 904 is formed by performing the CVD process, for example. A thickness of thecharge storage layer 904, for example, ranges from 60 angstrom to 80 angstrom, and is preferably about 70 angstrom. Thereafter, another insulatinglayer 906 is formed on thecharge storage layer 904. The insulatinglayer 906 is a oxide layer which a material of that is, for example, silicon oxide, and the insulatinglayer 906 is formed by performing the CVD process, for example. A thickness of the insulatinglayer 906, for example, ranges from 80 angstrom to 100 angstrom, and is preferably about 90 angstrom. - Thereafter, referring to
FIG. 9A , a consuminglayer 908 is formed on the insulatinglayer 906 by performing the CVD process, for example. The consuming layer is a polysilicon layer, for example. After that, amask layer 910 is formed on the consuminglayer 908. A material of themask layer 910 is, for example, silicon nitride, and a method for forming themask layer 910 includes carrying out the CVD process, for example. - Next, referring to
FIG. 9B , the patterning process is performed on themask layer 910, the consuminglayer 908, the insulatinglayer 906, thecharge storage layer 904, and the insulatinglayer 902, so as to form astacked structure 911. - Next, referring to
FIG. 9C , a portion of themask layer 910 is removed, so as to cover aintemal region 913 of the consuminglayer 908 and expose surfaces of aperipheral region 912 of the consuminglayer 908. The portion of themask layer 910 is removed by performing the etching process, for example. - As illustrated in
FIG. 9D , the converting process which is, for example, an oxidation process is then performed, such that the consuminglayer 908 of theperipheral region 912 is oxidized for forming an insulatinglayer 914. Another insulatinglayer 916 is also formed on a surface of thesubstrate 900 at the sides of the stackedstructure 911. - Afterwards, referring to
FIG. 9E , two source/drain regions 918 are formed in thesubstrate 900 below the insulatinglayer 916. The source/drain regions 918 are formed by performing the ion implantation process, for example. Next, another insulatinglayer 920 is conformally formed above themask layer 910, the insulatinglayer 914, and the insulatinglayer 916. The insulatinglayer 920 is a oxide layer which a material of that is, for example, silicon oxide, and the insulatinglayer 920 is formed by performing the CVD process, for example. - After that, referring to
FIG. 9F , a portion of the insulatinglayer 920 is removed, such that an insulating layer 922 remains. The insulating layer 922 and the insulatinglayer 914 together construct another insulatinglayer 924. A thickness of the insulatinglayer 924 ranges from 10 angstrom to 20 angstrom, for example. Here, the insulatinglayers charge storage layer 904. On the other hand, the insulatinglayers 922 and 916 together form a so-calledisolation layer 926. Next, themask layer 910 is removed. - Thereafter, referring to
FIG. 9G , aconductive layer 928 is formed on the insulatinglayer 924 and the consuminglayer 908. A material of theconductive layer 928 is polysilicon, for example, and theconductive layer 928 is formed by performing the CVD process, for example. The fabrication of the non-volatile memory is then completed. - To sum up, in the present invention, the stacked structure comprising the insulating layer/the charge storage layer/the insulating layer is disposed between the conductive layer and the substrate. The insulating layer disposed between the conductive layer and the charge storage layer has a greater thickness of the peripheral region than the thickness of the internal region of the insulating layer. Accordingly, the thickness of the peripheral region of the insulating layer results in a greater DIBL, which effectively reduces the second-bit effect and resolves the problems derived therefrom. Moreover, the device reliability and the Vt window for operating the left bit and the right bit are increased. Furthermore, the non-volatile memory of the present invention can be applied to a multi-bit memory device as well.
- The present invention has been disclosed above in the preferred embodiments, but is not limited to those. It is known to persons skilled in the art that some modifications and innovations may be made without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be defined by the following claims.
Claims (23)
1. A non-volatile memory, comprising:
a substrate;
a first insulating layer disposed over the substrate and disposed between two source/drain regions;
a second insulationg layer provided with a peripheral region and a internal region;
a charge storage layer disposed between the first insulating layer and the second insulationg layer, wherein the peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer; and
a conductive layer disposed over the second insulating layer.
2. The non-volatile memory as claimed in claim 1 , wherein the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom.
3. The non-volatile memory as claimed in claim 1 , wherein a thickness of the first insulating layer ranges from 50 angstrom to 60 angstrom.
4. The non-volatile memory as claimed in claim 1 , wherein a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
5. The non-volatile memory as claimed in claim 1 , wherein the first insulating layer is a oxide layer that comprising silicon oxide.
6. The non-volatile memory as claimed in claim 1 , wherein the charge storage layer is a dielectric material.
7. The non-volatile memory as claimed in claim 6 , wherein the dielectric material providing charge trapping ability.
8. The non-volatile memory as claimed in claim 6 , wherein the dielectric material is nitride material that comprising silicon nitride.
9. The non-volatile memory as claimed in claim 1 , wherein the second insulating layer is a oxide layer that comprising silicon oxide.
10. A method for fabricating a non-volatile memory, the method comprising:
providing a substrate;
forming a first insulating layer over the substrate and disposed between two source/drain regions;
providing a second insulationg layer having a peripheral region and a internal region;
forming a charge storage layer between the first insulating layer and the second insulationg layer, wherein the peripheral region of the second insulating layer is thicker than the internal region of the second insulating layer; and
forming a conductive layer over the second insulating layer.
11. The method for fabricating the non-volatile memory as claimed in claim 10 , wherein the thickness of the internal region of the second insulating layer ranges from 80 angstrom to 100 angstrom, while the thickness of the peripheral region of the second insulating layer ranges from 90 angstrom to 120 angstrom.
12. The method for fabricating the non-volatile memory as claimed in claim 10 , wherein a thickness of the first insulating layer ranges from 50 angstrom to 60 angstrom.
13. The method for fabricating the non-volatile memory as claimed in claim 10 , wherein a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
14. The method for fabricating the non-volatile memory as claimed in claim 10 , wherein the charge storage layer is a dielectric material and the dielectric material providing charge trapping ability.
15. The method for fabricating the non-volatile memory as claimed in claim 14 , wherein the dielectric material is nitride material that comprising silicon nitride.
16. A method for fabricating a non-volatile memory, the method comprising:
forming a stacked structure and a cosuming layer in sequence over a substrate;
performing a converting process at a peripheral region of the consuming layer to form a first insulating layer;
removing the consuming layer; and
forming a conductive layer over the stacked layer and the first insulating layer.
17. The method for fabricating the non-volatile memory as claimed in claim 16 , wherein the stacked structure comprises a second insulating layer, a charge storage layer, and a third insulating layer formed in sequence over the substrate.
18. The method for fabricating the non-volatile memory as claimed in claim 17 , wherein a thickness of the third insulating layer ranges from 80 angstrom to 100 angstrom, while a thickness of the first insulating layer ranges from 10 angstrom to 20 angstrom.
19. The method for fabricating the non-volatile memory as claimed in claim 17 , wherein a thickness of the second insulating layer ranges from 50 angstrom to 60 angstrom.
20. The method for fabricating the non-volatile memory as claimed in claim 17 , wherein a thickness of the charge storage layer ranges from 60 angstrom to 80 angstrom.
21. The method for fabricating the non-volatile memory as claimed in claim 17 , wherein the charge storage layer is a dielectric material and the dielectric material providing charge trapping ability.
22. The method for fabricating the non-volatile memory as claimed in claim 17 , wherein the dielectric material is nitride material that comprising silicon nitride.
23. The method for fabricating the non-volatile memory as claimed in claim 16 , wherein the converting process is an oxidation process.
Priority Applications (4)
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US12/015,939 US20090186212A1 (en) | 2008-01-17 | 2008-01-17 | Non-volatile memory and methods for fabricating the same |
CNA2008100962858A CN101488528A (en) | 2008-01-17 | 2008-05-08 | Non-volatile memory and methods for fabricating the same |
CN2010105019241A CN101996875B (en) | 2008-01-17 | 2008-05-08 | Methods for fabricating non-volatile memory |
US12/615,450 US7883975B2 (en) | 2008-01-17 | 2009-11-10 | Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layer |
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US12/015,939 US20090186212A1 (en) | 2008-01-17 | 2008-01-17 | Non-volatile memory and methods for fabricating the same |
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US12/615,450 Division US7883975B2 (en) | 2008-01-17 | 2009-11-10 | Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layer |
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US12/615,450 Active US7883975B2 (en) | 2008-01-17 | 2009-11-10 | Method for fabricating a non-volatile memory including converting a silicon layer-which formed over a stacked structure having a charge storage layer-into an insulating layer |
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KR100505108B1 (en) * | 2003-02-12 | 2005-07-29 | 삼성전자주식회사 | Sonos memory cell and method of fabricating the same |
TWI249819B (en) * | 2005-01-11 | 2006-02-21 | Powerchip Semiconductor Corp | Method of fabricating non-volatile memory |
KR100731115B1 (en) * | 2005-11-04 | 2007-06-22 | 동부일렉트로닉스 주식회사 | Flash memory device and method for fabricating the same |
CN101819949B (en) * | 2008-05-08 | 2012-07-11 | 旺宏电子股份有限公司 | Manufacturing method of non-volatile memory |
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2008
- 2008-01-17 US US12/015,939 patent/US20090186212A1/en not_active Abandoned
- 2008-05-08 CN CN2010105019241A patent/CN101996875B/en active Active
- 2008-05-08 CN CNA2008100962858A patent/CN101488528A/en active Pending
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US6468865B1 (en) * | 2000-11-28 | 2002-10-22 | Advanced Micro Devices, Inc. | Method of simultaneous formation of bitline isolation and periphery oxide |
US6706599B1 (en) * | 2003-03-20 | 2004-03-16 | Motorola, Inc. | Multi-bit non-volatile memory device and method therefor |
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US20070012993A1 (en) * | 2005-07-12 | 2007-01-18 | Macronix International Co., Ltd. | Non-volatile memory device, non-volatile memory cell thereof and method of fabricating the same |
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US20100055890A1 (en) | 2010-03-04 |
US7883975B2 (en) | 2011-02-08 |
CN101996875B (en) | 2013-06-19 |
CN101488528A (en) | 2009-07-22 |
CN101996875A (en) | 2011-03-30 |
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