US20090195989A1 - Heat sink component and a method of producing a heat sink component - Google Patents
Heat sink component and a method of producing a heat sink component Download PDFInfo
- Publication number
- US20090195989A1 US20090195989A1 US12/363,815 US36381509A US2009195989A1 US 20090195989 A1 US20090195989 A1 US 20090195989A1 US 36381509 A US36381509 A US 36381509A US 2009195989 A1 US2009195989 A1 US 2009195989A1
- Authority
- US
- United States
- Prior art keywords
- heat sink
- thermal
- conductive material
- tim
- thermally conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
Definitions
- the disclosures herein relate to a semiconductor package heat sink component including a thermally conductive material disposed on a semiconductor package.
- a semiconductor device such as a CPU (Central Processing Unit) is mounted in a fixed manner in a package while providing electrical connections.
- the temperature of such a semiconductor device becomes high during the device operation. Unless the temperature of the semiconductor device is reduced by an external means, the semiconductor device may suffer a performance drop, and may even break down.
- a heat sink plate or heat sink fin (or heat pipe) is mounted on the semiconductor device to provide a path through which the heat generated by the semiconductor device easily escapes to an exterior space.
- a thermal interface material TIM is placed between the semiconductor device and the heat sink plate or the like to closely follow their uneven surfaces for the purpose of reducing a thermal conductivity contact resistance thereby to achieve efficient thermal conduction.
- FIG. 1 is a cross-sectional drawing showing an example of the arrangement of a related-art heat sink component placed on a semiconductor package.
- Heat generated by a semiconductor device 200 mounted on a substrate 100 propagates to a heat sink plate 400 through a thermal interface material 300 disposed on the semiconductor device 200 .
- the heat conducted to the heat sink plate 400 then propagates to a heat sink fin 500 through a thermal interface material 300 disposed on the heat sink plate 400 .
- the thermal interface material 300 serves as a means to thermally couple the semiconductor device 200 with the heat sink plate 400 and the heat sink plate 400 with the heat sink fin 500 without letting them have direct contact with each other.
- the thermal interface material 300 is typically made of indium, which exhibits a satisfactory thermal conductivity. Indium is a rare metal, and is expensive. The stable supply of such a material in the future may not be guaranteed. Further, the configuration as described above requires a heat treatment such as reflow soldering for mounting the heat sink plate 400 in a fixed manner, which necessitates a complex manufacturing process.
- the thermal interface material 300 may be made of carbon nanotubes that are aligned in a heat conduction direction and shaped into a sheet by use of resin.
- the thermal interface material 300 that is made of a thermally conductive material such as a metal filler or graphite shaped by use of resin may have a problem in its heat sink performance because the thermal conductivity of the resin is not sufficiently high. In the case of carbon nanotubes aligned in a thermal conduction direction, thermal conductivity contact resistance between the end face of carbon nanotubes and the heat sink component tends to be large, thereby failing to provide an expected level of performance.
- FIG. 2 is a cross-sectional drawing showing a contact face between a related-art heat sink component and a thermal interface material inclusive of highly thermal conductive material.
- a contact face between the heat sink plate 400 (or heat sink fin 500 ) and the thermal interface material 300 has a space 600 because their surfaces are rough as viewed microscopically. Further, the most external surfaces of the thermal interface material 300 are formed by low thermal conductive layers 301 in which the proportion of resin is high.
- the structure described above Because of the structure described above, there is no physical contact between the heat sink plate 400 and a highly thermal conductive material 302 such as a metal filler or graphite. This increases a thermal contact resistance between the heat sink plate 400 and the highly thermal conductive material 302 to reduce the thermal conduction. Thus, the structure does not provide sufficient heat sink properties.
- a highly thermal conductive material 302 such as a metal filler or graphite.
- a heat sink component for a semiconductor package includes: a thermal interface member including a thermally conductive material; and a heat sink member having a surface thereof that includes at least one projecting portion having a pointed shape or edge shape, a tip of which digs into the thermally conductive material.
- a method of producing a heat sink component for a semiconductor package which includes a heat sink member and a thermal interface member including a thermally conductive material, includes the steps of: forming at least one projecting portion having a pointed shape or edge shape by performing one of press molding and micro-etching on a surface of the heat sink member that comes in contact with the thermal interface member; and applying a pressure to cause a tip of the projecting portion to dig into the thermally conductive material.
- a method of producing a heat sink component for a semiconductor package which includes a heat sink member and a thermal interface member including a thermally conductive material, includes the steps of: forming a layer having pointed-shape projecting portions by performing plating on a surface of the heat sink member that comes in contact with the thermal interface member; and applying a pressure to cause a tip of the pointed-shape projecting portion to dig into the thermally conductive material.
- a semiconductor package heat sink component that has high thermal conductivity and satisfactory heat sink performance can be provided.
- FIG. 1 is a cross-sectional drawing showing an example of the arrangement of a related-art heat sink component placed on a semiconductor package;
- FIG. 2 is a cross-sectional drawing showing a contact face between a related-art heat sink component and a thermal interface material inclusive of highly thermal conductive material;
- FIG. 3 is a cross-sectional view of a heat sink plate and a heat sink fin attached to a semiconductor package according to a present embodiment
- FIG. 4 is a cross-sectional view of a TIM that includes a low-thermal-conductivity material layer and a high-thermal-conductivity material;
- FIG. 5 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin;
- FIG. 6 is an expanded, cross-sectional view of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM;
- FIGS. 7A and 7B are expanded, plan views of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM;
- FIG. 8 is a cross-sectional view showing a variation of the heat sink plate or heat sink fin illustrated in FIG. 6 ;
- FIG. 9 is a perspective view showing a variation of the heat sink plate or heat sink fin illustrated in FIG. 6 ;
- FIG. 10 is a flowchart showing a process of manufacturing a semiconductor package heat sink component
- FIGS. 11A through 11C are drawings showing semiconductor package heat sink component assembling steps
- FIG. 12 is a flowchart of semiconductor packaging steps
- FIG. 13 is a drawing showing a rough-surface layer that has projecting portions formed by plating
- FIG. 14 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin shown in FIG. 13 ;
- FIG. 15 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown in FIG. 13 and a TIM that contains particles of highly thermal conductive material;
- FIG. 16 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown in FIG. 13 and a TIM that contains a highly thermal conductive material having a line shape;
- FIG. 17 is a drawing showing a TIM in which pillars made of metal or carbon are situated to penetrate through a resin sheet;
- FIG. 18 is an expanded, cross-sectional view of a contact face between the TIM shown in FIG. 17 and the heat sink plate or heat sink fin shown in FIG. 6 ;
- FIG. 19 is an expanded, cross-sectional view of a contact face between a conventional heat sink plate and a TIM made of carbon nanotubes that are aligned in a heat conduction direction and shaped into a sheet by use of resin;
- FIG. 20 is an expanded, cross-sectional view of a contact face between the TIM shown in FIG. 19 and the heat sink plate or heat sink fin shown in FIG. 13 .
- FIG. 3 is a cross-sectional view of a heat sink plate and a heat sink fin attached to a semiconductor package according to a present embodiment.
- a heat sink plate 40 of the present embodiment is disposed on a TIM 30 serving as a thermal interface member placed on the upper surface of a semiconductor device 20 that is mounted on a substrate 10 .
- a heat sink fin 50 of the present embodiment is disposed on a TIM 30 placed on the upper surface of the heat sink plate 40 .
- the TIM 30 includes a highly thermal conductive material such as metal filler, carbon filler, graphite, or carbon nanotubes, and is shaped by using an epoxy resin or organic resin as a major component.
- the TIM 30 may be made of carbon nanotubes that is aligned in a heat conduction direction and shaped into a sheet by use of resin.
- the TIM 30 is placed between the semiconductor device 20 and the heat sink plate 40 to thermally couple the semiconductor device 20 with the heat sink plate 40 . Also, the TIM 30 is placed between the heat sink plate 40 and the heat sink fin 50 to thermally couple the heat sink plate 40 with the heat sink fin 50 .
- the heat sink plate 40 may be a heat sink, and the heat sink fin 50 may be a heat sink fin provided with a heat pipe.
- the heat sink plate 40 and the heat sink fin 50 are made of a material having a good thermal conductivity such as aluminum or nickel-plated oxygen-free copper, and serve to conduct heat generated by the semiconductor device 20 to an exterior space.
- the thickness of the heat sink plate 40 may approximately be 0.5 to 2 mm.
- the surfaces of the heat sink plate 40 and the heat sink fin 50 that are in contact with the TIM 30 have projecting portions 60 that are formed by press molding.
- the projecting portions 60 are formed on the upper and lower surfaces of the heat sink plate 40 . This is not a limiting example, and the projecting portions 60 may be formed only on one of the surfaces.
- FIG. 4 is a cross-sectional view of the TIM that includes a low-thermal-conductivity material layer and a high-thermal-conductivity material. As illustrated in FIG. 4 , the most external surfaces of the TIM 30 are low-thermal-conductivity material layers 31 , and a high-thermal-conductivity material 32 is present inside the TIM 30 at a distance from these surfaces.
- the low-thermal-conductivity material layer 31 contains a high proportion of resin and only a little proportion of high-thermal-conductivity material 32 such as a metal filler. The thermal conductivity of the low-thermal-conductivity material layer 31 is thus low.
- the high-thermal-conductivity material 32 includes at least one of a metal filler made of conductive metal, a carbon filler, graphite, carbon nanotubes, and the like, which is provided with sufficient density to attain high thermal conductivity.
- the thickness of the TIM 30 is approximately 0.25 mm.
- the thickness of the low-thermal-conductivity material layer 31 is approximately 4 micrometers to 5 micrometers.
- the hardness of the low-thermal-conductivity material layer 31 is 40 to 90 Asker C, for example.
- FIG. 5 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin.
- the projecting portions 60 formed on the heat sink plate 40 or heat sink fin 50 have a needle shape (i.e., pointed shape) or blade shape (i.e., edge shape).
- a tip 62 of each of the projecting portions 60 penetrates through the low-thermal-conductivity material layer 31 such as a resin binder formed in the surface of the TIM 30 to reach (i.e., dig into) the high-thermal-conductivity material 32 such as a metal filler.
- the term “needle shape” used as a description of the shape of the tip 62 of the projecting portions 60 refers to a sharp-pointed shape such as the shape of a needle.
- the term “blade shape” refers to the tip 62 of the projecting portions 60 that forms a ridge (i.e., edge) rather than a point, as projecting portions 63 which will be described with reference to FIG. 9 , wherein the angle of the faces forming the ridge is narrow to form a shape edge.
- the term “penetrate through” refers to the fact that the tips 62 of the projecting portions 60 pass through the low-thermal-conductivity material layer 31 of the TIM 30 .
- the term “dig into” refers to the fact that the tips 62 of the projecting portions 60 cut into the high-thermal-conductivity material 32 of the TIM 30 , including the fact that tips 62 reach and are in contact with the high-thermal-conductivity material 32 .
- FIG. 6 is an expanded, cross-sectional view of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM.
- the heat sink plate 40 or heat sink fin 50 has a plurality of projecting portions 60 having a triangular shape formed by press molding.
- a height L 1 from the bottom of the projecting portions 60 to the tip 62 is approximately 5 micrometers.
- the projecting portions 60 may be a triangular pyramid, a quadrangular pyramid, a circular cone, or the like.
- the projecting portions 60 have a Vickers hardness value of approximately 40 to 120 HV, for example.
- FIGS. 7A and 7B are expanded, plan views of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM.
- each of the projecting portions 60 of the heat sink plate 40 or heat sink fin 50 formed by press molding is a three-sided pyramid or four-sided pyramid (excluding the base).
- FIG. 7A illustrates an example in which the projecting portions 60 are three-sided pyramids.
- the surface of the heat sink plate 40 that comes in contact with the TIM 30 has a plurality of three-sided-pyramid-shape projecting portions 60 , which have the same shape and are arranged at constant intervals.
- FIG. 7B illustrates an example in which the projecting portions 60 are four-sided pyramids.
- the arrangement of the projecting portions 60 on the surface of the heat sink plate 40 or heat sink fin 50 does not have to be a constant-interval arrangement. Any arrangement may suffice as long as the tips 62 of the projecting portions 60 dig into the high-thermal-conductivity material 32 to efficiently provide high-thermal-conduction performance.
- FIG. 8 is a cross-sectional view showing a variation of the heat sink plate or heat sink fin illustrated in FIG. 6 .
- the projecting portions 60 formed on the surface of the heat sink plate 40 or heat sink fin 50 that comes in contact with the TIM 30 are not limited to a triangular shape shown in FIG. 6 , and may have a sawtooth shape as shown in FIG. 8 that is formed by press molding.
- FIG. 9 is a perspective view showing a variation of the heat sink plate or heat sink fin illustrated in FIG. 6 .
- the projecting portions 60 formed on the surface of the heat sink plate 40 or heat sink fin 50 that comes in contact with the TIM 30 may be projecting portions 63 each of which has an edge of a triangular prism as the “blade shape” tip formed by press molding.
- the projecting portions 63 shown in FIG. 9 may be formed in parallel to each other on the surface of the heat sink plate 40 or heat sink fin 50 that comes in contact with the TIM 30 , or may be formed partly in parallel and partly in perpendicular to each other. Their orientations may be any orientations.
- the projecting portions 60 or 63 formed on the surface of the heat sink plate 40 or heat sink fin 50 that comes in contact with the TIM 30 have the sharp-pointed tips 62 , which penetrate through the low-thermal-conductivity material layer 31 that contains a high proportion of resin binder used for the TIM 30 .
- This arrangement increases the likelihood of the tips 62 of the projecting portions 60 reaching the high-thermal-conductivity material 32 such as a metal filler, graphite, carbon nanotubes that is present in the core portion of the TIM 30 .
- the tips 62 of the projecting portions 60 are in physical contact with the high-thermal-conductivity material 32 that are present inside the TIM 30 , thereby establishing a highly thermal conductive path.
- the resulting increase in thermal conductivity serves to provide a satisfactory heat sink property that allows the heat of the semiconductor device 20 shown in FIG. 3 to efficiently escape to an external space, where it may be transferred to an ambient medium by convection or radiation.
- an increase in the surface area of the heat sink plate 40 or heat sink fin 50 brings about an increase in the contact area between the TIM 30 and the heat sink plate 40 or heat sink fin 50 .
- This arrangement makes it possible to efficiently perform thermal conduction, thereby further improving heat sink performance.
- FIG. 10 is a flowchart showing a process of manufacturing a semiconductor package heat sink component. As shown in FIG. 10 , the projecting portions 60 are formed on the heat sink plate 40 (S 20 through S 22 ). In step S 20 , the heat sink plate 40 made of nickel-plated oxygen-free copper, for example, is provided.
- step S 22 the projecting portions 60 are formed by press molding on the one or more surfaces of the heat sink plate 40 that come in contact with the TIM 30 .
- a conventional press molding is used for such press molding.
- the projecting portions 60 are formed on the upper and lower surfaces of the heat sink plate 40 .
- the projecting portions 60 may be needle-shaped or blade-shaped as shown in FIG. 3 , FIG. 5 , FIG. 6 , FIG. 7A , FIG. 7B , FIG. 8 , or FIG. 9 .
- the projecting portions 60 are sufficiently sharp-pointed such that the tips 62 of the projecting portions 60 penetrate through the low-thermal-conductivity material layer 31 of the TIM 30 to dig into the high-thermal-conductivity material 32 when the heat sink plate 40 is pressed against the TIM 30 , as will be described later.
- the angle of the two sides forming the tips 62 having a triangular shape or sawtooth shape shown in FIG. 6 or FIG. 8 is properly selected in response to the hardness of the projecting portions 60 , the pressure applied by the heat sink plate 40 to the TIM 30 , the thickness and hardness of the low-thermal-conductivity material layer 31 , etc. In this manner, it is ensured that the tips 62 of the projecting portions 60 penetrate through the low-thermal-conductivity material layer 31 of the TIM 30 to dig into the high-thermal-conductivity material 32 .
- the arrangement, positions, and number of the projecting portions 60 on the heat sink plate 40 are appropriately selected such that the tips 62 of the projecting portions 60 penetrate through the low-thermal-conductivity material layer 31 of the TIM 30 to dig into the high-thermal-conductivity material 32 when the heat sink plate 40 is pressed against the TIM 30 as will be described later.
- the projecting portions 60 are formed on the heat sink plate 40 .
- a nickel (Ni) plate may be formed after the projecting portions 60 are formed on the oxygen-free-copper heat sink plate 40 , for example.
- the projecting portions 60 are similarly formed on the heat sink fin 50 .
- the processes of forming the projecting portions 60 on the heat sink fin 50 will be described in the following (S 30 through S 32 ).
- step S 30 the heat sink fin 50 made of aluminum having satisfactory thermal conductivity, for example, is provided.
- the heat sink fin 50 may be provided with a heat pipe.
- step S 32 the projecting portions 60 are formed by press molding on the surface of the heat sink fin 50 that comes in contact with the TIM 30 .
- a conventional press molding is used for such press molding.
- the shape of the projecting portions 60 and the arrangement, positions, and number of the projecting portions 60 formed on the projecting portions 60 are selected in the same manner as when the projecting portions 60 are formed on the heat sink plate 40 in step S 22 . In the manner described above, the projecting portions 60 are formed on the heat sink fin 50 . These steps 330 through S 32 may be performed simultaneously with or separately from the steps S 20 through S 22 that form the projecting portions 60 on the heat sink plate 40 .
- FIGS. 11A through 11C are drawings showing semiconductor package heat sink component assembling steps.
- two TIMs 30 i.e., TIM 30 A and TIM 30 B are used.
- step S 42 the TIM 30 A and the heat sink plate 40 are provided, and the projecting portions 60 formed on the upper surface of the heat sink plate 40 are pressed against the lower surface of the TIM 30 A as shown in FIG. 11A .
- step S 44 the projecting portions 60 formed on the lower surface of the heat sink plate 40 are pressed against the upper surface of the TIM 30 B.
- step S 46 the heat sink fin 50 is provided, and the projecting portions 60 formed on the lower surface of the heat sink fin 50 are pressed against the upper surface of the TIM 30 A as shown in FIG. 11A .
- the heat sink plate 40 and the heat sink fin 50 are attached to the TIM 30 A and 30 B as shown in FIG. 11B .
- the pressure applied in the steps S 42 through S 46 may be 0.5 MPa through 5 MPa. This pressure is selected such that the tips 62 of the projecting portions 60 penetrate through the low-thermal-conductivity material layer 31 to dig into the high-thermal-conductivity material 32 . Specifically, this pressure is properly selected depending on the hardness (e.g., Vickers hardness 40 through 120 HV) of the surface of the heat sink plate 40 , the sharpness of the tips 62 , the density of the projecting portions 60 , the thickness (e.g., approximately 4 to 5 micrometers) and hardness (e.g., 40 to 90 Asker C) of the low-thermal-conductivity material layer 31 of the TIM 30 , etc.
- the hardness e.g., Vickers hardness 40 through 120 HV
- the sharpness of the tips 62 the density of the projecting portions 60
- the thickness e.g., approximately 4 to 5 micrometers
- hardness e.g. 40 to 90 Asker C
- FIG. 12 is a flowchart of semiconductor packaging steps.
- step S 50 is a step of mounting the semiconductor device 20 on the substrate 10 .
- the semiconductor device 20 is placed on the substrate 10 , followed by fixing the semiconductor device 20 by use of a conventional method.
- step S 52 the heat sink component produced by the heat sink component manufacturing steps that end with step S 46 is attached in a fixed manner to the semiconductor device 20 .
- the lower surface of the TIM 30 B having the heat sink plate 40 , the TIM 30 A, and the heat sink fin 50 attached thereon is bonded in step S 46 to the upper surface of the semiconductor device 20 , which is mounted on the substrate 10 in step S 50 .
- the semiconductor package shown in FIG. 3 is completed.
- the sequence of the above-described steps may be altered as appropriate.
- the lower surface of the TIM 30 B having the heat sink plate 40 attached thereon may be bonded to the upper surface of the semiconductor device 20 , followed by attaching the lower surface of the TIM 30 A to the upper surface of the heat sink plate 40 , and then attaching the heat sink fin 50 to the upper surface of the TIM 30 A.
- the heat sink plate 40 and the heat sink fin 50 assembled in the manner described above have the projecting portions 60 formed thereon that are in physical contact with the high-thermal-conductivity material 32 .
- a highly thermal conductive path is established by reducing a thermal conductivity contact resistance between the high-thermal-conductivity material 32 and the heat sink plate 40 or heat sink fin 50 . That is, high thermal conductivity is provided. This improves a heat sink function that allows the heat of the semiconductor device 20 to efficiently escape to an external space, where it may be transferred to an ambient medium by convection or radiation.
- the provision of the projecting portions 60 on the heat sink plate 40 or heat sink fin 50 increases the contact area of the heat sink plate 40 or heat sink fin 50 with the TIM 30 . With this provision, the thermal conductivity between the TIM 30 and the heat sink plate 40 or heat sink fin 50 further increases, thereby further improving heat sink performance.
- the projecting portions 60 of the heat sink plate 40 and the heat sink fin 50 formed by press molding in steps S 22 and S 32 may alternatively be formed by etching. Conventional etching may be used in such an etching step. An organic-acid-based micro-etching agent may be used.
- FIG. 13 is a drawing showing a rough-surface layer that has projecting portions formed by plating.
- a rough-surface layer 70 formed by plating has needle-like projecting portions 72 whose tips 74 are sharp-pointed.
- the plating method for forming the rough-surface layer 70 may be either electroplating or nonelectrolytic plating.
- the tips 74 of the projecting portions 72 are formed to be sharp, such that the tips 74 penetrate through the low-thermal-conductivity material layer 31 of the TIM 30 to dig into the high-thermal-conductivity material 32 when the heat sink plate 42 and the heat sink fin 50 are pressed against the TIMs 30 A and 30 B in the manufacturing steps S 42 through S 46 .
- the pressure applied to the TIM 30 in steps S 42 through S 46 after forming the rough-surface layer 70 on the heat sink plate 40 and/or the heat sink fin 50 is selected such that the tips 74 of the projecting portions 72 penetrate through the low-thermal-conductivity material layer 31 to dig into the high-thermal-conductivity material 32 .
- the pressure applied in steps S 42 through S 46 may be adjusted depending on the hardness of the projecting portions 72 , the sharpness of the tips 74 , the density of the projecting portions 72 on the heat sink plate 40 and/or the heat sink fin 50 , the thickness and hardness of the low-thermal-conductivity material layer 31 of the TIM 30 , etc.
- FIG. 14 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin shown in FIG. 13 .
- the tips 74 of the projecting portions 72 of the rough-surface layer 70 formed on the heat sink plate 40 or heat sink fin 50 by plating as described above penetrate through the low-thermal-conductivity material layer 31 of the TIM 30 to dig into the high-thermal-conductivity material 32 .
- the heat sink plate 40 and the heat sink fin 50 assembled in the manner described above have the projecting portions 72 formed thereon that are in physical contact with the high-thermal-conductivity material 32 .
- a highly thermal conductive path is established by reducing a thermal contact resistance between the high-thermal-conductivity material 32 and the heat sink plate 40 or heat sink fin 50 . That is, high thermal conductivity is provided. This improves a heat sink function that allows the heat of the semiconductor device 20 to efficiently escape to an external space, where it may be transferred to an ambient medium by convection or radiation.
- the provision of the projecting portions 72 on the heat sink plate 40 or heat sink fin 50 increases the contact area of the heat sink plate 40 or heat sink fin 50 with the TIM 30 . With this provision, the thermal conductivity between the TIM 30 and the heat sink plate 40 or heat sink fin 50 further increases, thereby further improving heat sink performance.
- FIG. 15 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown in FIG. 13 and a TIM that contains particles of highly thermal conductive material.
- the heat sink plate 40 or heat sink fin 50 illustrated in FIG. 15 has the rough-surface layer 70 formed thereon, which has the projecting portions 72 .
- the tips 74 of the projecting portions 72 penetrate through the low-thermal-conductivity material layer 31 such as a resin binder existing in the surface of the TIM 30 to dig into the high-thermal-conductivity material 32 that is made of at least one of a metal filler, graphite, and the like.
- FIG. 16 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown in FIG. 13 and a TIM that contains a highly thermal conductive material having a line shape.
- the heat sink plate 40 or heat sink fin 50 illustrated in FIG. 16 has the rough-surface layer 70 formed thereon, which has the projecting portions 72 .
- the tips 74 of the projecting portions 72 penetrate through the low-thermal-conductivity material layer 31 such as a resin binder existing in the surface of the TIM 30 to dig into the high-thermal-conductivity material 32 such as carbon nanotubes or the like having a line shape.
- the projecting portions 72 shown in FIG. 15 and FIG. 16 may alternatively be the projecting portions 60 shown in FIG. 6 or FIG. 8 .
- the rough-surface layer 70 having the projecting portions 72 is formed on the heat sink plate 40 or heat sink fin 50 , and the tips 74 of the projecting portions 72 penetrate through the low-thermal-conductivity material layer 31 that has a high proportion of resin binder.
- This arrangement increases the likelihood of the tips 74 of the projecting portions 72 reaching the high-thermal-conductivity material 32 such as a metal filler, graphite, carbon nanotubes existing in the core portion of the TIM 30 .
- the tips 74 of the projecting portions 72 are in physical contact with the high-thermal-conductivity material 32 that are present inside the TIM 30 , thereby establishing a highly thermal conductive path. This reduces a thermal contact resistance between the TIM 30 and the heat sink plate 40 or heat sink fin 50 .
- an increase in the surface area of the heat sink plate 40 or heat sink fin 50 brings about an increase in the contact area between the TIM 30 and the heat sink plate 40 or heat sink fin 50 .
- This arrangement makes it possible to efficiently perform thermal conduction.
- FIG. 17 is a drawing showing a TIM in which pillars made of metal or carbon are situated to penetrate through a resin sheet.
- a TIM 35 has a sheet shape in which a highly thermal conductive material 39 that are pillars made of metal, carbon, or the like penetrate through a resin sheet 37 .
- the surface of the resin sheet 37 and the surface of the highly thermal conductive material 39 are not flush with each other, such that the surface of the highly thermal conductive material metal pillars 39 forms a recess with respect to the resin surface of the resin sheet 37 . Because of this, the use of a conventional heat sink plate results in an air layer being formed at the contact face between the heat sink plate and the TIM 35 , thereby increasing a thermal conductivity contact resistance and lowering the thermal conductivity.
- FIG. 18 is an expanded, cross-sectional view of a contact face between the TIM shown in FIG. 17 and the heat sink plate or heat sink fin shown in FIG. 6 .
- the surface of the heat sink plate 40 or heat sink fin 50 that comes in contact with the TIM 35 has the projecting portions 60 .
- the sharp-pointed tips 62 of the projecting portions 60 of the heat sink plate 40 or heat sink fin 50 dig into the resin sheet 37 and highly thermal conductive material 39 of the TIM 35 .
- the tips 62 of the projecting portions 60 of the heat sink plate 40 or heat sink fin 50 have physical contact with the highly thermal conductive material 39 to establish a highly thermal conductive path.
- the projecting portions 60 of the heat sink plate 40 or heat sink fin 50 bring about an increase in the contact area with the highly thermal conductive material 39 , thereby making it possible to efficiently perform thermal conduction. This improves a heat sink function that allows the heat of the semiconductor device 20 to efficiently escape to an external space.
- FIG. 19 is an expanded, cross-sectional view of a contact face between a conventional heat sink plate and a TIM made of carbon nanotubes that are aligned in a heat conduction direction and shaped into a sheet by use of resin.
- the unevenness of the surface of the heat sink plate 400 is relatively small compared with the variation of lengths of line-shaped carbon nanotubes constituting the high-thermal-conductivity material 32 . Because of this, short-length carbon nanotubes of the high-thermal-conductivity material 32 do not touch the surface of the heat sink plate 400 , thereby creating spaces 600 between the surface of the heat sink plate 400 and the high-thermal-conductivity material 32 .
- a thermal contact resistance between the surface of the heat sink plate 400 and the high-thermal-conductivity material 32 increases to lower the thermal conductivity, thereby failing to provide satisfactory heat sink performance.
- FIG. 20 is an expanded, cross-sectional view of a contact face between the TIM shown in FIG. 19 and the heat sink plate or heat sink fin shown in FIG. 13 .
- the rough-surface layer 70 having the projecting portions 72 is formed on an unevenness forming surface of the heat sink plate 40 or heat sink fin 50 .
- the projecting portions 72 shown herein may alternatively be the projecting portions 60 shown in FIG. 6 or FIG. 8 .
- the tips 74 of the projecting portions 72 dig into the high-thermal-conductivity material 32 such as a metal filler, carbon nanotubes, or the like that exists in the core or in the surface of the TIM 30 .
- This arrangement increases the likelihood of the tips 74 of the projecting portions 72 touching the high-thermal-conductivity material 32 such as a metal filler, carbon nanotubes, or the like existing in the core or in the surface of the TIM 30 , thereby improving the thermal conductivity.
- the high-thermal-conductivity material 32 such as a metal filler, carbon nanotubes, or the like existing in the core or in the surface of the TIM 30 , thereby improving the thermal conductivity.
- an increase in the surface area of the heat sink plate 40 or heat sink fin 50 brings about an increase in the contact area between the TIM 30 and the heat sink plate 40 or heat sink fin 50 .
- This arrangement makes it possible to efficiently perform thermal conduction.
- a semiconductor package heat sink component that has high thermal conductivity and satisfactory heat sink performance can be provided.
Abstract
A heat sink component for a semiconductor package includes a thermal interface member including a thermally conductive material, and a heat sink member having a surface thereof that includes at least one projecting portion having a pointed shape or edge shape, a tip of which digs into the thermally conductive material.
Description
- 1. Field of the Invention
- The disclosures herein relate to a semiconductor package heat sink component including a thermally conductive material disposed on a semiconductor package.
- 2. Description of the Related Art
- A semiconductor device such as a CPU (Central Processing Unit) is mounted in a fixed manner in a package while providing electrical connections. The temperature of such a semiconductor device becomes high during the device operation. Unless the temperature of the semiconductor device is reduced by an external means, the semiconductor device may suffer a performance drop, and may even break down. To this end, a heat sink plate or heat sink fin (or heat pipe) is mounted on the semiconductor device to provide a path through which the heat generated by the semiconductor device easily escapes to an exterior space. A thermal interface material (TIM) is placed between the semiconductor device and the heat sink plate or the like to closely follow their uneven surfaces for the purpose of reducing a thermal conductivity contact resistance thereby to achieve efficient thermal conduction.
-
FIG. 1 is a cross-sectional drawing showing an example of the arrangement of a related-art heat sink component placed on a semiconductor package. Heat generated by asemiconductor device 200 mounted on a substrate 100 propagates to aheat sink plate 400 through athermal interface material 300 disposed on thesemiconductor device 200. The heat conducted to theheat sink plate 400 then propagates to aheat sink fin 500 through athermal interface material 300 disposed on theheat sink plate 400. - In this manner, the
thermal interface material 300 serves as a means to thermally couple thesemiconductor device 200 with theheat sink plate 400 and theheat sink plate 400 with theheat sink fin 500 without letting them have direct contact with each other. - The
thermal interface material 300 is typically made of indium, which exhibits a satisfactory thermal conductivity. Indium is a rare metal, and is expensive. The stable supply of such a material in the future may not be guaranteed. Further, the configuration as described above requires a heat treatment such as reflow soldering for mounting theheat sink plate 400 in a fixed manner, which necessitates a complex manufacturing process. - In consideration of this, another material such as silicon grease or organic resin binder including a metal filler or graphite serving as highly thermal conductive material may be used as the
thermal interface material 300. Alternatively, thethermal interface material 300 may be made of carbon nanotubes that are aligned in a heat conduction direction and shaped into a sheet by use of resin. - Documents that disclose related art devices and methods include Japanese Patent Application Publications No. 2005-347500, No. 2004-349497, and No. 2008-205273.
- The
thermal interface material 300 that is made of a thermally conductive material such as a metal filler or graphite shaped by use of resin may have a problem in its heat sink performance because the thermal conductivity of the resin is not sufficiently high. In the case of carbon nanotubes aligned in a thermal conduction direction, thermal conductivity contact resistance between the end face of carbon nanotubes and the heat sink component tends to be large, thereby failing to provide an expected level of performance. -
FIG. 2 is a cross-sectional drawing showing a contact face between a related-art heat sink component and a thermal interface material inclusive of highly thermal conductive material. As shown inFIG. 2 , a contact face between the heat sink plate 400 (or heat sink fin 500) and thethermal interface material 300 has aspace 600 because their surfaces are rough as viewed microscopically. Further, the most external surfaces of thethermal interface material 300 are formed by low thermalconductive layers 301 in which the proportion of resin is high. - Because of the structure described above, there is no physical contact between the
heat sink plate 400 and a highly thermalconductive material 302 such as a metal filler or graphite. This increases a thermal contact resistance between theheat sink plate 400 and the highly thermalconductive material 302 to reduce the thermal conduction. Thus, the structure does not provide sufficient heat sink properties. - Accordingly, there is a need to provide a semiconductor package heat sink component (i.e., a heat sink component for a semiconductor package) that has high thermal conductivity and satisfactory heat sink performance.
- It is a general object of the present invention to provide a heat sink component and a method of producing a heat sink component that substantially eliminate one or more problems caused by the limitations and disadvantages of the related art.
- According to an embodiment, a heat sink component for a semiconductor package includes: a thermal interface member including a thermally conductive material; and a heat sink member having a surface thereof that includes at least one projecting portion having a pointed shape or edge shape, a tip of which digs into the thermally conductive material.
- According to another embodiment, a method of producing a heat sink component for a semiconductor package, which includes a heat sink member and a thermal interface member including a thermally conductive material, includes the steps of: forming at least one projecting portion having a pointed shape or edge shape by performing one of press molding and micro-etching on a surface of the heat sink member that comes in contact with the thermal interface member; and applying a pressure to cause a tip of the projecting portion to dig into the thermally conductive material.
- According to another embodiment, a method of producing a heat sink component for a semiconductor package, which includes a heat sink member and a thermal interface member including a thermally conductive material, includes the steps of: forming a layer having pointed-shape projecting portions by performing plating on a surface of the heat sink member that comes in contact with the thermal interface member; and applying a pressure to cause a tip of the pointed-shape projecting portion to dig into the thermally conductive material.
- According to at least one embodiment of the present invention, a semiconductor package heat sink component that has high thermal conductivity and satisfactory heat sink performance can be provided.
- Other objects and further features of the present invention will be apparent from the following detailed description when read in conjunction with the accompanying drawings, in which:
-
FIG. 1 is a cross-sectional drawing showing an example of the arrangement of a related-art heat sink component placed on a semiconductor package; -
FIG. 2 is a cross-sectional drawing showing a contact face between a related-art heat sink component and a thermal interface material inclusive of highly thermal conductive material; -
FIG. 3 is a cross-sectional view of a heat sink plate and a heat sink fin attached to a semiconductor package according to a present embodiment; -
FIG. 4 is a cross-sectional view of a TIM that includes a low-thermal-conductivity material layer and a high-thermal-conductivity material; -
FIG. 5 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin; -
FIG. 6 is an expanded, cross-sectional view of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM; -
FIGS. 7A and 7B are expanded, plan views of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM; -
FIG. 8 is a cross-sectional view showing a variation of the heat sink plate or heat sink fin illustrated inFIG. 6 ; -
FIG. 9 is a perspective view showing a variation of the heat sink plate or heat sink fin illustrated inFIG. 6 ; -
FIG. 10 is a flowchart showing a process of manufacturing a semiconductor package heat sink component; -
FIGS. 11A through 11C are drawings showing semiconductor package heat sink component assembling steps; -
FIG. 12 is a flowchart of semiconductor packaging steps; -
FIG. 13 is a drawing showing a rough-surface layer that has projecting portions formed by plating; -
FIG. 14 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin shown inFIG. 13 ; -
FIG. 15 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown inFIG. 13 and a TIM that contains particles of highly thermal conductive material; -
FIG. 16 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown inFIG. 13 and a TIM that contains a highly thermal conductive material having a line shape; -
FIG. 17 is a drawing showing a TIM in which pillars made of metal or carbon are situated to penetrate through a resin sheet; -
FIG. 18 is an expanded, cross-sectional view of a contact face between the TIM shown inFIG. 17 and the heat sink plate or heat sink fin shown inFIG. 6 ; -
FIG. 19 is an expanded, cross-sectional view of a contact face between a conventional heat sink plate and a TIM made of carbon nanotubes that are aligned in a heat conduction direction and shaped into a sheet by use of resin; and -
FIG. 20 is an expanded, cross-sectional view of a contact face between the TIM shown inFIG. 19 and the heat sink plate or heat sink fin shown inFIG. 13 . - In the following, embodiments for carrying out the present invention will be described by referring to the accompanying drawings.
- [Semiconductor Package Heat Sink Component]
-
FIG. 3 is a cross-sectional view of a heat sink plate and a heat sink fin attached to a semiconductor package according to a present embodiment. As illustrated inFIG. 3 , aheat sink plate 40 of the present embodiment is disposed on aTIM 30 serving as a thermal interface member placed on the upper surface of asemiconductor device 20 that is mounted on asubstrate 10. Aheat sink fin 50 of the present embodiment is disposed on aTIM 30 placed on the upper surface of theheat sink plate 40. - The
TIM 30 includes a highly thermal conductive material such as metal filler, carbon filler, graphite, or carbon nanotubes, and is shaped by using an epoxy resin or organic resin as a major component. TheTIM 30 may be made of carbon nanotubes that is aligned in a heat conduction direction and shaped into a sheet by use of resin. - The
TIM 30 is placed between thesemiconductor device 20 and theheat sink plate 40 to thermally couple thesemiconductor device 20 with theheat sink plate 40. Also, theTIM 30 is placed between theheat sink plate 40 and theheat sink fin 50 to thermally couple theheat sink plate 40 with theheat sink fin 50. - The
heat sink plate 40 may be a heat sink, and theheat sink fin 50 may be a heat sink fin provided with a heat pipe. Theheat sink plate 40 and theheat sink fin 50 are made of a material having a good thermal conductivity such as aluminum or nickel-plated oxygen-free copper, and serve to conduct heat generated by thesemiconductor device 20 to an exterior space. The thickness of theheat sink plate 40 may approximately be 0.5 to 2 mm. - As illustrated in
FIG. 3 , the surfaces of theheat sink plate 40 and theheat sink fin 50 that are in contact with theTIM 30 have projectingportions 60 that are formed by press molding. In the present embodiment, the projectingportions 60 are formed on the upper and lower surfaces of theheat sink plate 40. This is not a limiting example, and the projectingportions 60 may be formed only on one of the surfaces. -
FIG. 4 is a cross-sectional view of the TIM that includes a low-thermal-conductivity material layer and a high-thermal-conductivity material. As illustrated inFIG. 4 , the most external surfaces of theTIM 30 are low-thermal-conductivity material layers 31, and a high-thermal-conductivity material 32 is present inside theTIM 30 at a distance from these surfaces. - The low-thermal-
conductivity material layer 31 contains a high proportion of resin and only a little proportion of high-thermal-conductivity material 32 such as a metal filler. The thermal conductivity of the low-thermal-conductivity material layer 31 is thus low. - The high-thermal-
conductivity material 32 includes at least one of a metal filler made of conductive metal, a carbon filler, graphite, carbon nanotubes, and the like, which is provided with sufficient density to attain high thermal conductivity. The thickness of theTIM 30 is approximately 0.25 mm. The thickness of the low-thermal-conductivity material layer 31 is approximately 4 micrometers to 5 micrometers. The hardness of the low-thermal-conductivity material layer 31 is 40 to 90 Asker C, for example. -
FIG. 5 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin. As shown inFIG. 5 , the projectingportions 60 formed on theheat sink plate 40 orheat sink fin 50 have a needle shape (i.e., pointed shape) or blade shape (i.e., edge shape). Further, atip 62 of each of the projectingportions 60 penetrates through the low-thermal-conductivity material layer 31 such as a resin binder formed in the surface of theTIM 30 to reach (i.e., dig into) the high-thermal-conductivity material 32 such as a metal filler. - Here, the term “needle shape” used as a description of the shape of the
tip 62 of the projectingportions 60 refers to a sharp-pointed shape such as the shape of a needle. Here, the term “blade shape” refers to thetip 62 of the projectingportions 60 that forms a ridge (i.e., edge) rather than a point, as projectingportions 63 which will be described with reference toFIG. 9 , wherein the angle of the faces forming the ridge is narrow to form a shape edge. - Further, the term “penetrate through” refers to the fact that the
tips 62 of the projectingportions 60 pass through the low-thermal-conductivity material layer 31 of theTIM 30. The term “dig into” refers to the fact that thetips 62 of the projectingportions 60 cut into the high-thermal-conductivity material 32 of theTIM 30, including the fact thattips 62 reach and are in contact with the high-thermal-conductivity material 32. -
FIG. 6 is an expanded, cross-sectional view of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM. As shown inFIG. 6 , theheat sink plate 40 orheat sink fin 50 has a plurality of projectingportions 60 having a triangular shape formed by press molding. - A height L1 from the bottom of the projecting
portions 60 to thetip 62 is approximately 5 micrometers. The projectingportions 60 may be a triangular pyramid, a quadrangular pyramid, a circular cone, or the like. The projectingportions 60 have a Vickers hardness value of approximately 40 to 120 HV, for example. -
FIGS. 7A and 7B are expanded, plan views of the surface of the heat sink plate or heat sink fin that comes in contact with the TIM. As viewed from above, each of the projectingportions 60 of theheat sink plate 40 orheat sink fin 50 formed by press molding is a three-sided pyramid or four-sided pyramid (excluding the base). -
FIG. 7A illustrates an example in which the projectingportions 60 are three-sided pyramids. As shown inFIG. 7A , the surface of theheat sink plate 40 that comes in contact with theTIM 30 has a plurality of three-sided-pyramid-shape projecting portions 60, which have the same shape and are arranged at constant intervals.FIG. 7B illustrates an example in which the projectingportions 60 are four-sided pyramids. - The arrangement of the projecting
portions 60 on the surface of theheat sink plate 40 orheat sink fin 50 does not have to be a constant-interval arrangement. Any arrangement may suffice as long as thetips 62 of the projectingportions 60 dig into the high-thermal-conductivity material 32 to efficiently provide high-thermal-conduction performance. - [First Variation of Semiconductor Package Heat Sink Component]
-
FIG. 8 is a cross-sectional view showing a variation of the heat sink plate or heat sink fin illustrated inFIG. 6 . As shown inFIG. 8 , the projectingportions 60 formed on the surface of theheat sink plate 40 orheat sink fin 50 that comes in contact with theTIM 30 are not limited to a triangular shape shown inFIG. 6 , and may have a sawtooth shape as shown inFIG. 8 that is formed by press molding. - [Second Variation of Semiconductor Package Heat Sink Component]
-
FIG. 9 is a perspective view showing a variation of the heat sink plate or heat sink fin illustrated inFIG. 6 . As shown inFIG. 9 , the projectingportions 60 formed on the surface of theheat sink plate 40 orheat sink fin 50 that comes in contact with theTIM 30 may be projectingportions 63 each of which has an edge of a triangular prism as the “blade shape” tip formed by press molding. - The projecting
portions 63 shown inFIG. 9 may be formed in parallel to each other on the surface of theheat sink plate 40 orheat sink fin 50 that comes in contact with theTIM 30, or may be formed partly in parallel and partly in perpendicular to each other. Their orientations may be any orientations. - In the present embodiment described above, the projecting
portions heat sink plate 40 orheat sink fin 50 that comes in contact with theTIM 30 have the sharp-pointedtips 62, which penetrate through the low-thermal-conductivity material layer 31 that contains a high proportion of resin binder used for theTIM 30. This arrangement increases the likelihood of thetips 62 of the projectingportions 60 reaching the high-thermal-conductivity material 32 such as a metal filler, graphite, carbon nanotubes that is present in the core portion of theTIM 30. - According to the present embodiment, further, the
tips 62 of the projectingportions 60 are in physical contact with the high-thermal-conductivity material 32 that are present inside theTIM 30, thereby establishing a highly thermal conductive path. This reduces a thermal conductivity contact resistance between theTIM 30 and theheat sink plate 40 orheat sink fin 50. The resulting increase in thermal conductivity serves to provide a satisfactory heat sink property that allows the heat of thesemiconductor device 20 shown inFIG. 3 to efficiently escape to an external space, where it may be transferred to an ambient medium by convection or radiation. - In the present embodiment, moreover, an increase in the surface area of the
heat sink plate 40 orheat sink fin 50 brings about an increase in the contact area between theTIM 30 and theheat sink plate 40 orheat sink fin 50. This arrangement makes it possible to efficiently perform thermal conduction, thereby further improving heat sink performance. - [Method of Manufacturing a Semiconductor Package Heat Sink Component]
- In the following, a method of manufacturing the
heat sink plate 40 and theheat sink fin 50 will be described with the accompanying drawings. -
FIG. 10 is a flowchart showing a process of manufacturing a semiconductor package heat sink component. As shown inFIG. 10 , the projectingportions 60 are formed on the heat sink plate 40 (S20 through S22). In step S20, theheat sink plate 40 made of nickel-plated oxygen-free copper, for example, is provided. - In step S22, the projecting
portions 60 are formed by press molding on the one or more surfaces of theheat sink plate 40 that come in contact with theTIM 30. A conventional press molding is used for such press molding. In the present embodiment, the projectingportions 60 are formed on the upper and lower surfaces of theheat sink plate 40. - The projecting
portions 60 may be needle-shaped or blade-shaped as shown inFIG. 3 ,FIG. 5 ,FIG. 6 ,FIG. 7A ,FIG. 7B ,FIG. 8 , orFIG. 9 . The projectingportions 60 are sufficiently sharp-pointed such that thetips 62 of the projectingportions 60 penetrate through the low-thermal-conductivity material layer 31 of theTIM 30 to dig into the high-thermal-conductivity material 32 when theheat sink plate 40 is pressed against theTIM 30, as will be described later. - More specifically, the angle of the two sides forming the
tips 62 having a triangular shape or sawtooth shape shown inFIG. 6 orFIG. 8 is properly selected in response to the hardness of the projectingportions 60, the pressure applied by theheat sink plate 40 to theTIM 30, the thickness and hardness of the low-thermal-conductivity material layer 31, etc. In this manner, it is ensured that thetips 62 of the projectingportions 60 penetrate through the low-thermal-conductivity material layer 31 of theTIM 30 to dig into the high-thermal-conductivity material 32. - By the same token, the arrangement, positions, and number of the projecting
portions 60 on theheat sink plate 40 are appropriately selected such that thetips 62 of the projectingportions 60 penetrate through the low-thermal-conductivity material layer 31 of theTIM 30 to dig into the high-thermal-conductivity material 32 when theheat sink plate 40 is pressed against theTIM 30 as will be described later. - In the manner described above, the projecting
portions 60 are formed on theheat sink plate 40. In the heat sink component processing steps S20 through S22, a nickel (Ni) plate may be formed after the projectingportions 60 are formed on the oxygen-free-copperheat sink plate 40, for example. - Thereafter, the projecting
portions 60 are similarly formed on theheat sink fin 50. The processes of forming the projectingportions 60 on theheat sink fin 50 will be described in the following (S30 through S32). - In step S30, the
heat sink fin 50 made of aluminum having satisfactory thermal conductivity, for example, is provided. Theheat sink fin 50 may be provided with a heat pipe. In step S32, the projectingportions 60 are formed by press molding on the surface of theheat sink fin 50 that comes in contact with theTIM 30. A conventional press molding is used for such press molding. - The shape of the projecting
portions 60 and the arrangement, positions, and number of the projectingportions 60 formed on the projectingportions 60 are selected in the same manner as when the projectingportions 60 are formed on theheat sink plate 40 in step S22. In the manner described above, the projectingportions 60 are formed on theheat sink fin 50. These steps 330 through S32 may be performed simultaneously with or separately from the steps S20 through S22 that form the projectingportions 60 on theheat sink plate 40. - In the following, a process (S42 through S46) of attaching the
heat sink plate 40 and theheat sink fin 50 having the projectingportions 60 formed thereon to theTIM 30 will be described by referring toFIGS. 11A through 11C .FIGS. 11A through 11C are drawings showing semiconductor package heat sink component assembling steps. Here, two TIMs 30 (i.e.,TIM 30A andTIM 30B) are used. - In step S42, the
TIM 30A and theheat sink plate 40 are provided, and the projectingportions 60 formed on the upper surface of theheat sink plate 40 are pressed against the lower surface of theTIM 30A as shown inFIG. 11A . In step S44, the projectingportions 60 formed on the lower surface of theheat sink plate 40 are pressed against the upper surface of theTIM 30B. - In step S46, the
heat sink fin 50 is provided, and the projectingportions 60 formed on the lower surface of theheat sink fin 50 are pressed against the upper surface of theTIM 30A as shown inFIG. 11A . - In this manner, the
heat sink plate 40 and theheat sink fin 50 are attached to theTIM FIG. 11B . - The pressure applied in the steps S42 through S46 may be 0.5 MPa through 5 MPa. This pressure is selected such that the
tips 62 of the projectingportions 60 penetrate through the low-thermal-conductivity material layer 31 to dig into the high-thermal-conductivity material 32. Specifically, this pressure is properly selected depending on the hardness (e.g.,Vickers hardness 40 through 120 HV) of the surface of theheat sink plate 40, the sharpness of thetips 62, the density of the projectingportions 60, the thickness (e.g., approximately 4 to 5 micrometers) and hardness (e.g., 40 to 90 Asker C) of the low-thermal-conductivity material layer 31 of theTIM 30, etc. - In what follows, semiconductor packaging steps will be described by referring to a view of the heat sink component shown in
FIG. 11C .FIG. 12 is a flowchart of semiconductor packaging steps. As shown inFIG. 12 , step S50 is a step of mounting thesemiconductor device 20 on thesubstrate 10. In this step, thesemiconductor device 20 is placed on thesubstrate 10, followed by fixing thesemiconductor device 20 by use of a conventional method. - In step S52, the heat sink component produced by the heat sink component manufacturing steps that end with step S46 is attached in a fixed manner to the
semiconductor device 20. To be specific, as shown inFIG. 11C , for example, the lower surface of theTIM 30B having theheat sink plate 40, theTIM 30A, and theheat sink fin 50 attached thereon is bonded in step S46 to the upper surface of thesemiconductor device 20, which is mounted on thesubstrate 10 in step S50. - In this manner, the semiconductor package shown in
FIG. 3 is completed. The sequence of the above-described steps may be altered as appropriate. For example, the lower surface of theTIM 30B having theheat sink plate 40 attached thereon may be bonded to the upper surface of thesemiconductor device 20, followed by attaching the lower surface of theTIM 30A to the upper surface of theheat sink plate 40, and then attaching theheat sink fin 50 to the upper surface of theTIM 30A. - The
heat sink plate 40 and theheat sink fin 50 assembled in the manner described above have the projectingportions 60 formed thereon that are in physical contact with the high-thermal-conductivity material 32. With this arrangement, a highly thermal conductive path is established by reducing a thermal conductivity contact resistance between the high-thermal-conductivity material 32 and theheat sink plate 40 orheat sink fin 50. That is, high thermal conductivity is provided. This improves a heat sink function that allows the heat of thesemiconductor device 20 to efficiently escape to an external space, where it may be transferred to an ambient medium by convection or radiation. - The provision of the projecting
portions 60 on theheat sink plate 40 orheat sink fin 50 increases the contact area of theheat sink plate 40 orheat sink fin 50 with theTIM 30. With this provision, the thermal conductivity between theTIM 30 and theheat sink plate 40 orheat sink fin 50 further increases, thereby further improving heat sink performance. - [First Variation of Method of Manufacturing a Semiconductor Package Heat Sink Component]
- The projecting
portions 60 of theheat sink plate 40 and theheat sink fin 50 formed by press molding in steps S22 and S32 may alternatively be formed by etching. Conventional etching may be used in such an etching step. An organic-acid-based micro-etching agent may be used. - [Second Variation of Method of Manufacturing a Semiconductor Package Heat Sink Component]
- The projecting
portions 60 of theheat sink plate 40 and theheat sink fin 50 formed by press molding in steps S22 and S32 may alternatively be formed by plating.FIG. 13 is a drawing showing a rough-surface layer that has projecting portions formed by plating. - As illustrated in
FIG. 13 , a rough-surface layer 70 formed by plating has needle-like projectingportions 72 whosetips 74 are sharp-pointed. The plating method for forming the rough-surface layer 70 may be either electroplating or nonelectrolytic plating. - The
tips 74 of the projectingportions 72 are formed to be sharp, such that thetips 74 penetrate through the low-thermal-conductivity material layer 31 of theTIM 30 to dig into the high-thermal-conductivity material 32 when theheat sink plate 42 and theheat sink fin 50 are pressed against theTIMs - Further, the pressure applied to the
TIM 30 in steps S42 through S46 after forming the rough-surface layer 70 on theheat sink plate 40 and/or theheat sink fin 50 is selected such that thetips 74 of the projectingportions 72 penetrate through the low-thermal-conductivity material layer 31 to dig into the high-thermal-conductivity material 32. The pressure applied in steps S42 through S46 may be adjusted depending on the hardness of the projectingportions 72, the sharpness of thetips 74, the density of the projectingportions 72 on theheat sink plate 40 and/or theheat sink fin 50, the thickness and hardness of the low-thermal-conductivity material layer 31 of theTIM 30, etc. -
FIG. 14 is an expanded, cross-sectional view of a contact face between the TIM and the heat sink plate or heat sink fin shown inFIG. 13 . As shown inFIG. 14 , thetips 74 of the projectingportions 72 of the rough-surface layer 70 formed on theheat sink plate 40 orheat sink fin 50 by plating as described above penetrate through the low-thermal-conductivity material layer 31 of theTIM 30 to dig into the high-thermal-conductivity material 32. - Accordingly, the
heat sink plate 40 and theheat sink fin 50 assembled in the manner described above have the projectingportions 72 formed thereon that are in physical contact with the high-thermal-conductivity material 32. With this arrangement, a highly thermal conductive path is established by reducing a thermal contact resistance between the high-thermal-conductivity material 32 and theheat sink plate 40 orheat sink fin 50. That is, high thermal conductivity is provided. This improves a heat sink function that allows the heat of thesemiconductor device 20 to efficiently escape to an external space, where it may be transferred to an ambient medium by convection or radiation. - Further, the provision of the projecting
portions 72 on theheat sink plate 40 orheat sink fin 50 increases the contact area of theheat sink plate 40 orheat sink fin 50 with theTIM 30. With this provision, the thermal conductivity between theTIM 30 and theheat sink plate 40 orheat sink fin 50 further increases, thereby further improving heat sink performance. - [Third Variation of Semiconductor Package Heat Sink Component]
-
FIG. 15 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown inFIG. 13 and a TIM that contains particles of highly thermal conductive material. Theheat sink plate 40 orheat sink fin 50 illustrated inFIG. 15 has the rough-surface layer 70 formed thereon, which has the projectingportions 72. Thetips 74 of the projectingportions 72 penetrate through the low-thermal-conductivity material layer 31 such as a resin binder existing in the surface of theTIM 30 to dig into the high-thermal-conductivity material 32 that is made of at least one of a metal filler, graphite, and the like. - [Fourth Variation of Semiconductor Package Heat Sink Component]
-
FIG. 16 is an expanded, cross-sectional view of a contact face between the heat sink plate or heat sink fin shown inFIG. 13 and a TIM that contains a highly thermal conductive material having a line shape. Theheat sink plate 40 orheat sink fin 50 illustrated inFIG. 16 has the rough-surface layer 70 formed thereon, which has the projectingportions 72. Further, thetips 74 of the projectingportions 72 penetrate through the low-thermal-conductivity material layer 31 such as a resin binder existing in the surface of theTIM 30 to dig into the high-thermal-conductivity material 32 such as carbon nanotubes or the like having a line shape. The projectingportions 72 shown inFIG. 15 andFIG. 16 may alternatively be the projectingportions 60 shown inFIG. 6 orFIG. 8 . - As shown in
FIG. 15 andFIG. 16 , the rough-surface layer 70 having the projectingportions 72 is formed on theheat sink plate 40 orheat sink fin 50, and thetips 74 of the projectingportions 72 penetrate through the low-thermal-conductivity material layer 31 that has a high proportion of resin binder. This arrangement increases the likelihood of thetips 74 of the projectingportions 72 reaching the high-thermal-conductivity material 32 such as a metal filler, graphite, carbon nanotubes existing in the core portion of theTIM 30. Further, thetips 74 of the projectingportions 72 are in physical contact with the high-thermal-conductivity material 32 that are present inside theTIM 30, thereby establishing a highly thermal conductive path. This reduces a thermal contact resistance between theTIM 30 and theheat sink plate 40 orheat sink fin 50. - Moreover, an increase in the surface area of the
heat sink plate 40 orheat sink fin 50 brings about an increase in the contact area between theTIM 30 and theheat sink plate 40 orheat sink fin 50. This arrangement makes it possible to efficiently perform thermal conduction. - [Fifth Variation of Semiconductor Package Heat Sink Component]
-
FIG. 17 is a drawing showing a TIM in which pillars made of metal or carbon are situated to penetrate through a resin sheet. As illustrated inFIG. 17 , aTIM 35 has a sheet shape in which a highly thermalconductive material 39 that are pillars made of metal, carbon, or the like penetrate through aresin sheet 37. - As illustrated in an expanded view, the surface of the
resin sheet 37 and the surface of the highly thermalconductive material 39 are not flush with each other, such that the surface of the highly thermal conductivematerial metal pillars 39 forms a recess with respect to the resin surface of theresin sheet 37. Because of this, the use of a conventional heat sink plate results in an air layer being formed at the contact face between the heat sink plate and theTIM 35, thereby increasing a thermal conductivity contact resistance and lowering the thermal conductivity. -
FIG. 18 is an expanded, cross-sectional view of a contact face between the TIM shown inFIG. 17 and the heat sink plate or heat sink fin shown inFIG. 6 . As shown inFIG. 18 , the surface of theheat sink plate 40 orheat sink fin 50 that comes in contact with theTIM 35 has the projectingportions 60. With this configuration, the sharp-pointedtips 62 of the projectingportions 60 of theheat sink plate 40 orheat sink fin 50 dig into theresin sheet 37 and highly thermalconductive material 39 of theTIM 35. - Accordingly, even when the surface of the highly thermal
conductive material 39 is lower than the surface of theresin sheet 37, thetips 62 of the projectingportions 60 of theheat sink plate 40 orheat sink fin 50 have physical contact with the highly thermalconductive material 39 to establish a highly thermal conductive path. Moreover, the projectingportions 60 of theheat sink plate 40 orheat sink fin 50 bring about an increase in the contact area with the highly thermalconductive material 39, thereby making it possible to efficiently perform thermal conduction. This improves a heat sink function that allows the heat of thesemiconductor device 20 to efficiently escape to an external space. - [Sixth Variation of Semiconductor Package Heat Sink Component]
-
FIG. 19 is an expanded, cross-sectional view of a contact face between a conventional heat sink plate and a TIM made of carbon nanotubes that are aligned in a heat conduction direction and shaped into a sheet by use of resin. As shown inFIG. 19 , the unevenness of the surface of theheat sink plate 400 is relatively small compared with the variation of lengths of line-shaped carbon nanotubes constituting the high-thermal-conductivity material 32. Because of this, short-length carbon nanotubes of the high-thermal-conductivity material 32 do not touch the surface of theheat sink plate 400, thereby creatingspaces 600 between the surface of theheat sink plate 400 and the high-thermal-conductivity material 32. - Accordingly, a thermal contact resistance between the surface of the
heat sink plate 400 and the high-thermal-conductivity material 32 increases to lower the thermal conductivity, thereby failing to provide satisfactory heat sink performance. -
FIG. 20 is an expanded, cross-sectional view of a contact face between the TIM shown inFIG. 19 and the heat sink plate or heat sink fin shown inFIG. 13 . As illustrated inFIG. 20 , the rough-surface layer 70 having the projectingportions 72 is formed on an unevenness forming surface of theheat sink plate 40 orheat sink fin 50. The projectingportions 72 shown herein may alternatively be the projectingportions 60 shown inFIG. 6 orFIG. 8 . - Further, the
tips 74 of the projectingportions 72 dig into the high-thermal-conductivity material 32 such as a metal filler, carbon nanotubes, or the like that exists in the core or in the surface of theTIM 30. - This arrangement increases the likelihood of the
tips 74 of the projectingportions 72 touching the high-thermal-conductivity material 32 such as a metal filler, carbon nanotubes, or the like existing in the core or in the surface of theTIM 30, thereby improving the thermal conductivity. - Moreover, an increase in the surface area of the
heat sink plate 40 orheat sink fin 50 brings about an increase in the contact area between theTIM 30 and theheat sink plate 40 orheat sink fin 50. This arrangement makes it possible to efficiently perform thermal conduction. - According to at least one embodiment of the present invention described above, a semiconductor package heat sink component that has high thermal conductivity and satisfactory heat sink performance can be provided.
- Further, the present invention is not limited to these embodiments, but various variations and modifications may be made without departing from the scope of the present invention.
- The present application is based on Japanese priority applications No. 2008-023870 filed on Feb. 4, 2008 and No. 2009-5898 filed on Jan. 14, 2009, with the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.
Claims (8)
1. A heat sink component for a semiconductor package, comprising:
a thermal interface member including a thermally conductive material; and
a heat sink member having a surface thereof that includes at least one projecting portion having a pointed shape or edge shape, a tip of which digs into the thermally conductive material.
2. The heat sink component as claimed in claim 1 , wherein the thermal interface member includes a first thermally conductive material region existing in a surface of the thermal interface member and a second thermally conductive material region existing at a depth from said surface, the first thermally conductive material region having a first thermal conductivity that is lower than a second thermal conductivity of the second thermally conductive material region, and wherein the tip of the projecting portion penetrates through the first thermally conductive material region to reach the second thermally conductive material region.
3. The heat sink component as claimed in claim 1 , wherein the thermally conductive material includes at least one of a metal filler, a carbon filler, graphite, and a plurality of carbon nanotubes.
4. The heat sink component as claimed in claim 1 , wherein the thermal interface member is made of a resin containing the thermally conductive material that includes at least one of a metal filler, a carbon filer, graphite, and carbon nanotubes.
5. A method of producing a heat sink component for a semiconductor package, which includes a heat sink member and a thermal interface member including a thermally conductive material, comprising the steps of:
forming at least one projecting portion having a pointed shape or edge shape by performing one of press molding and micro-etching on a surface of the heat sink member that comes in contact with the thermal interface member; and
applying a pressure to cause a tip of the projecting portion to dig into the thermally conductive material.
6. The method as claimed in claim 5 , further comprising a step of forming the thermal interface member by use of a resin including the thermally conductive material.
7. A method of producing a heat sink component for a semiconductor packager which includes a heat sink member and a thermal interface member including a thermally conductive material, comprising the steps of:
forming a layer having pointed-shape projecting portions by performing plating on a surface of the heat sink member that comes in contact with the thermal interface member; and
applying a pressure to cause a tip of the pointed-shape projecting portion to dig into the thermally conductive material.
8. The method as claimed in claim 7 , further comprising a step of forming the thermal interface member by use of a resin including the thermally conductive material.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-023870 | 2008-02-04 | ||
JP2008023870 | 2008-02-04 | ||
JP2009005898A JP5243975B2 (en) | 2008-02-04 | 2009-01-14 | Semiconductor package heat dissipating part having heat conducting member and method of manufacturing the same |
JP2009-005898 | 2009-01-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090195989A1 true US20090195989A1 (en) | 2009-08-06 |
Family
ID=40931476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/363,815 Abandoned US20090195989A1 (en) | 2008-02-04 | 2009-02-02 | Heat sink component and a method of producing a heat sink component |
Country Status (2)
Country | Link |
---|---|
US (1) | US20090195989A1 (en) |
JP (1) | JP5243975B2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100246133A1 (en) * | 2009-03-31 | 2010-09-30 | Apple Inc. | Method and apparatus for distributing a thermal interface material |
US20120314373A1 (en) * | 2010-02-11 | 2012-12-13 | Brian Park | Seabed Pressure Bottle Thermal Management |
DE102011078460A1 (en) * | 2011-06-30 | 2013-01-03 | Robert Bosch Gmbh | Electronic circuit for dissipation of heat loss components |
US20130105455A1 (en) * | 2011-10-27 | 2013-05-02 | Ji HUANG | Crimping fixed electric heater via the Internet of Things (IOT) |
US20150171052A1 (en) * | 2013-12-18 | 2015-06-18 | Chung-Shan Institute Of Science And Technology, Armaments Bureau, M.N.D | Substrate of semiconductor and method for forming the same |
CN104932637A (en) * | 2015-05-20 | 2015-09-23 | 铜陵宏正网络科技有限公司 | Heat conduction assembly for CPU (central processing unit) of desk computer |
US20160161196A1 (en) * | 2011-01-04 | 2016-06-09 | Nanocomp Technologies, Inc. | Nanotube-Based Insulators |
EP2546871A4 (en) * | 2010-03-12 | 2018-01-03 | Fujitsu Limited | Heat dissipating structure and production method therefor |
US10224268B1 (en) * | 2016-11-28 | 2019-03-05 | CoolStar Technology, Inc. | Enhanced thermal transfer in a semiconductor structure |
US10876201B2 (en) | 2016-06-27 | 2020-12-29 | Ironwood 12 Llc | Broadband fluorescence amplification assembly |
US11186732B2 (en) | 2016-06-27 | 2021-11-30 | Ironwood 12 Llc | Vertically-aligned carbon nanotube substrate having increased surface area |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101115714B1 (en) | 2009-12-30 | 2012-03-06 | 하나 마이크론(주) | Method For Fabricating a Heat Radiating Type Semiconductor Package |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4254431A (en) * | 1979-06-20 | 1981-03-03 | International Business Machines Corporation | Restorable backbond for LSI chips using liquid metal coated dendrites |
US5113315A (en) * | 1990-08-07 | 1992-05-12 | Cirqon Technologies Corporation | Heat-conductive metal ceramic composite material panel system for improved heat dissipation |
US6037658A (en) * | 1997-10-07 | 2000-03-14 | International Business Machines Corporation | Electronic package with heat transfer means |
US20020038704A1 (en) * | 2000-09-29 | 2002-04-04 | Houle Sabina J. | Carbon-carbon and/or metal-carbon fiber composite heat spreaders |
US6396699B1 (en) * | 2001-01-19 | 2002-05-28 | Lsi Logic Corporation | Heat sink with chip die EMC ground interconnect |
US20040040327A1 (en) * | 2001-07-09 | 2004-03-04 | Masakazu Iida | Power module and air conditioner |
US20040232534A1 (en) * | 2003-05-22 | 2004-11-25 | Shinko Electric Industries, Co., Ltd. | Packaging component and semiconductor package |
US6835453B2 (en) * | 2001-01-22 | 2004-12-28 | Parker-Hannifin Corporation | Clean release, phase change thermal interface |
US6856016B2 (en) * | 2002-07-02 | 2005-02-15 | Intel Corp | Method and apparatus using nanotubes for cooling and grounding die |
US20050061496A1 (en) * | 2003-09-24 | 2005-03-24 | Matabayas James Christopher | Thermal interface material with aligned carbon nanotubes |
US20060037741A1 (en) * | 2004-08-19 | 2006-02-23 | Fujitsu Limited | Heat transfer sheet, heat transfer structural body and manufacturing method of the heat transfer structural body |
US20070096304A1 (en) * | 2005-08-26 | 2007-05-03 | Kabir Mohammad S | Interconnects and heat dissipators based on nanostructures |
US7218000B2 (en) * | 2003-06-27 | 2007-05-15 | Intel Corporation | Liquid solder thermal interface material contained within a cold-formed barrier and methods of making same |
US7273095B2 (en) * | 2003-03-11 | 2007-09-25 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Nanoengineered thermal materials based on carbon nanotube array composites |
US20080165502A1 (en) * | 2007-01-04 | 2008-07-10 | Furman Bruce K | Patterned metal thermal interface |
US20090039503A1 (en) * | 2007-06-08 | 2009-02-12 | Shigeru Tokita | Semiconductor device |
US8410371B2 (en) * | 2009-09-08 | 2013-04-02 | Cree, Inc. | Electronic device submounts with thermally conductive vias and light emitting devices including the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06232294A (en) * | 1993-02-03 | 1994-08-19 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH077110A (en) * | 1993-06-16 | 1995-01-10 | Hitachi Ltd | Semiconductor device |
JPH08288437A (en) * | 1995-04-17 | 1996-11-01 | Hitachi Ltd | Heat radiating fin, semiconductor device using it, and semiconductor device mounting structure |
JP2004327533A (en) * | 2003-04-22 | 2004-11-18 | Nissan Motor Co Ltd | Semiconductor device and its manufacturing method |
JP2005116946A (en) * | 2003-10-10 | 2005-04-28 | Shin Etsu Polymer Co Ltd | Heat dissipating sheet and manufacturing method therefor |
-
2009
- 2009-01-14 JP JP2009005898A patent/JP5243975B2/en active Active
- 2009-02-02 US US12/363,815 patent/US20090195989A1/en not_active Abandoned
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4254431A (en) * | 1979-06-20 | 1981-03-03 | International Business Machines Corporation | Restorable backbond for LSI chips using liquid metal coated dendrites |
US5113315A (en) * | 1990-08-07 | 1992-05-12 | Cirqon Technologies Corporation | Heat-conductive metal ceramic composite material panel system for improved heat dissipation |
US6037658A (en) * | 1997-10-07 | 2000-03-14 | International Business Machines Corporation | Electronic package with heat transfer means |
US20020038704A1 (en) * | 2000-09-29 | 2002-04-04 | Houle Sabina J. | Carbon-carbon and/or metal-carbon fiber composite heat spreaders |
US6396699B1 (en) * | 2001-01-19 | 2002-05-28 | Lsi Logic Corporation | Heat sink with chip die EMC ground interconnect |
US6835453B2 (en) * | 2001-01-22 | 2004-12-28 | Parker-Hannifin Corporation | Clean release, phase change thermal interface |
US20040040327A1 (en) * | 2001-07-09 | 2004-03-04 | Masakazu Iida | Power module and air conditioner |
US6856016B2 (en) * | 2002-07-02 | 2005-02-15 | Intel Corp | Method and apparatus using nanotubes for cooling and grounding die |
US7273095B2 (en) * | 2003-03-11 | 2007-09-25 | United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Nanoengineered thermal materials based on carbon nanotube array composites |
US20040232534A1 (en) * | 2003-05-22 | 2004-11-25 | Shinko Electric Industries, Co., Ltd. | Packaging component and semiconductor package |
US7218000B2 (en) * | 2003-06-27 | 2007-05-15 | Intel Corporation | Liquid solder thermal interface material contained within a cold-formed barrier and methods of making same |
US20050061496A1 (en) * | 2003-09-24 | 2005-03-24 | Matabayas James Christopher | Thermal interface material with aligned carbon nanotubes |
US20060037741A1 (en) * | 2004-08-19 | 2006-02-23 | Fujitsu Limited | Heat transfer sheet, heat transfer structural body and manufacturing method of the heat transfer structural body |
US20070096304A1 (en) * | 2005-08-26 | 2007-05-03 | Kabir Mohammad S | Interconnects and heat dissipators based on nanostructures |
US20080165502A1 (en) * | 2007-01-04 | 2008-07-10 | Furman Bruce K | Patterned metal thermal interface |
US20090039503A1 (en) * | 2007-06-08 | 2009-02-12 | Shigeru Tokita | Semiconductor device |
US8410371B2 (en) * | 2009-09-08 | 2013-04-02 | Cree, Inc. | Electronic device submounts with thermally conductive vias and light emitting devices including the same |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7961469B2 (en) * | 2009-03-31 | 2011-06-14 | Apple Inc. | Method and apparatus for distributing a thermal interface material |
US20110228482A1 (en) * | 2009-03-31 | 2011-09-22 | Apple Inc. | Method and apparatus for distributing a thermal interface material |
US20100246133A1 (en) * | 2009-03-31 | 2010-09-30 | Apple Inc. | Method and apparatus for distributing a thermal interface material |
US8564955B2 (en) * | 2009-03-31 | 2013-10-22 | Apple Inc. | Coupling heat sink to integrated circuit chip with thermal interface material |
US20120314373A1 (en) * | 2010-02-11 | 2012-12-13 | Brian Park | Seabed Pressure Bottle Thermal Management |
EP2546871A4 (en) * | 2010-03-12 | 2018-01-03 | Fujitsu Limited | Heat dissipating structure and production method therefor |
US20160161196A1 (en) * | 2011-01-04 | 2016-06-09 | Nanocomp Technologies, Inc. | Nanotube-Based Insulators |
US10145627B2 (en) * | 2011-01-04 | 2018-12-04 | Nanocomp Technologies, Inc. | Nanotube-based insulators |
DE102011078460A1 (en) * | 2011-06-30 | 2013-01-03 | Robert Bosch Gmbh | Electronic circuit for dissipation of heat loss components |
US9049749B2 (en) * | 2011-10-27 | 2015-06-02 | Shanghai Huazu Industry Co., Ltd. | Crimping fixed, remotely regulated electric heater |
US20130105455A1 (en) * | 2011-10-27 | 2013-05-02 | Ji HUANG | Crimping fixed electric heater via the Internet of Things (IOT) |
US20150171052A1 (en) * | 2013-12-18 | 2015-06-18 | Chung-Shan Institute Of Science And Technology, Armaments Bureau, M.N.D | Substrate of semiconductor and method for forming the same |
CN104932637A (en) * | 2015-05-20 | 2015-09-23 | 铜陵宏正网络科技有限公司 | Heat conduction assembly for CPU (central processing unit) of desk computer |
US10876201B2 (en) | 2016-06-27 | 2020-12-29 | Ironwood 12 Llc | Broadband fluorescence amplification assembly |
US11186732B2 (en) | 2016-06-27 | 2021-11-30 | Ironwood 12 Llc | Vertically-aligned carbon nanotube substrate having increased surface area |
US10224268B1 (en) * | 2016-11-28 | 2019-03-05 | CoolStar Technology, Inc. | Enhanced thermal transfer in a semiconductor structure |
US10566270B2 (en) | 2016-11-28 | 2020-02-18 | CoolStar Technology, Inc. | Enhanced thermal transfer in a semiconductor structure |
Also Published As
Publication number | Publication date |
---|---|
JP2009212495A (en) | 2009-09-17 |
JP5243975B2 (en) | 2013-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20090195989A1 (en) | Heat sink component and a method of producing a heat sink component | |
US20100326630A1 (en) | Heat spreader with vapor chamber and method for manufacturing the same | |
KR102055587B1 (en) | Heat-Sink Substrate For High-Power Semiconductor, High-Power Semiconductor Module Comprising The Same, And Manufacturing Process Thereof | |
JP4466644B2 (en) | heatsink | |
JP5955343B2 (en) | Semiconductor device and manufacturing method thereof | |
JP5885630B2 (en) | Printed board | |
JP5153684B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
JP2009105366A5 (en) | ||
WO2017015814A1 (en) | Plate-like temperature uniforming device | |
US20070147005A1 (en) | Heat sink board and manufacturing method thereof | |
JP2016039321A (en) | Lead frame, resin molding, surface-mounted electronic component, surface-mounted light-emitting device, and lead frame manufacturing method | |
JP5092274B2 (en) | Semiconductor device | |
US9184106B2 (en) | Heat sink and semiconductor device | |
JP2020061482A (en) | Heat dissipation structure | |
CN212305941U (en) | Circuit structure with heat conduction device | |
JP7324974B2 (en) | Electronic device and manufacturing method thereof | |
JP4872394B2 (en) | Heat sink and semiconductor device provided with the heat sink | |
JP2006140401A (en) | Semiconductor integrated circuit device | |
JP2021150468A (en) | Semiconductor device manufacturing method, semiconductor device, and pressing device | |
TWI641795B (en) | Plate temperature equalization device | |
US20210183726A1 (en) | Semiconductor device | |
US9138840B2 (en) | Method for manufacturing a heat sink | |
US20140170848A1 (en) | Method of Forming Substrate | |
CN209747497U (en) | Chip substrate and packaged chip | |
JP2021170611A (en) | Heat conduction sheet and electronic device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SHINKO ELECTRIC INDUSTRIES CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ODA, TAKUYA;REEL/FRAME:022186/0653 Effective date: 20090129 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |