US20090283143A1 - Point contact solar cell - Google Patents
Point contact solar cell Download PDFInfo
- Publication number
- US20090283143A1 US20090283143A1 US12/465,035 US46503509A US2009283143A1 US 20090283143 A1 US20090283143 A1 US 20090283143A1 US 46503509 A US46503509 A US 46503509A US 2009283143 A1 US2009283143 A1 US 2009283143A1
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- Prior art keywords
- semiconductor
- semiconductor component
- point
- semiconductor substrate
- contacts
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- 239000004065 semiconductor Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000002161 passivation Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/061—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being of the point-contact type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a semiconductor component and a solar cell module comprising at least two semiconductor components of this type.
- the invention further relates to a method of producing a semiconductor component.
- a semiconductor component comprising a semiconductor substrate comprising a front surface, a back surface which is opposite to said front surface and a surface normal which is perpendicular to the front and back surfaces, a first contact structure which is electrically conductive and is electrically connected to the front surface of the semiconductor substrate via at least one point-shaped front contact, and a second contact structure which is electrically conductive and is electrically connected to the back surface of the semiconductor substrate.
- a solar cell module comprising at least two semiconductor components according to the invention, the semiconductor components being electrically interconnected.
- this object is achieved by a method of producing a semiconductor component, the method comprising the steps of providing a semiconductor substrate comprising a front surface, a back surface and an electrically insulating first passivation layer arranged on the front surface, forming holes in the first passivation layer by means of a laser and applying a first contact structure to the front surface of the semiconductor substrate, with the first contact structure being electrically connected to the semiconductor substrate in the region of the holes.
- the gist of the invention is to electrically connect a contact structure on the front surface of the semiconductor component to the semiconductor substrate via point-shaped contacts.
- a contact structure on the front surface of the semiconductor component is provided to form holes in a first passivation layer on the front surface of the semiconductor substrate by means of a laser, with a contact structure being formed in these holes in a subsequent metallization process.
- FIG. 1 is a cross-section through a semiconductor component according to a first embodiment
- FIG. 2 is a longitudinal section along line II-II through the semiconductor component according to FIG. 1 ;
- FIG. 3 is a cross-section through a solar cell module comprising two semiconductor components according to FIG. 1 .
- a semiconductor component 1 comprises a flat, in other words two-dimensional, semiconductor substrate 2 with a front surface 3 , a back surface 4 which is opposite to said front surface 3 , and a surface normal 5 which is perpendicular to the front surface 3 and to the back surface 4 .
- the semiconductor component 1 is in particular a solar cell.
- the semiconductor substrate 2 consists of a semiconductor material, in particular silicon. Other semiconductor materials are however conceivable as well.
- On the front surface 3 is provided a region serving as an emitter 6 .
- the emitter 6 is doped in an appropriate manner.
- first passivation layer 7 On the front surface 3 of the semiconductor substrate 2 is provided a first passivation layer 7 which also serves as an anti-reflection layer.
- the first passivation layer 7 is electrically insulating.
- the first passivation layer 7 advantageously consists of silicon nitride.
- the first passivation layer 7 is provided with a plurality of holes 8 . Perpendicular to the surface normal 5 , the holes 8 have dimensions which are very small in relation to the dimensions of the semiconductor substrate 2 . They are therefore referred to as point-shaped in the following description.
- the holes 8 are in particular circular.
- the semiconductor component 1 further comprises a first contact structure 9 which is electrically conductive and is electrically connected to the front surface 3 of the semiconductor substrate 2 via front contacts 10 in the holes 8 .
- the front contacts 10 fill the holes 8 completely. They are therefore referred to as point-shaped in the following description as well. Similar to the holes 8 , the front contacts 10 have a diameter D K and a surface area A K in the range of 10 ⁇ m 2 to 10000 ⁇ m 2 , in particular in the range of 100 ⁇ m 2 to 1000 ⁇ m 2 .
- the first contact structure 9 comprises at least one layer of nickel, cobalt, copper, silver, tin or a combination of these elements.
- the first contact structure 9 in particular comprises multiple layers. The exact layout of the first contact structure 9 is described in DE 10 2007 031 958.6.
- the openings 8 with the front contacts 10 are arranged in rows which are parallel to each other. They are in particular arranged at identical distances from each other.
- the point-shaped front contacts 10 are thus arranged at the corner points of a regular grid which is in particular in the shape of a square.
- the first contact structure 9 further comprises linear conductive traces 11 .
- the conductive traces 11 cover in each case one row of the front contacts 10 to which they are electrically connected.
- the conductive traces 11 have a width B L which is preferably greater than the diameter D K of the front contacts 10 .
- the ratio B L :D K is no more than 2, in particular no more than 1.5.
- the conductive traces 11 may however also be narrower than the diameter D K of the front contacts 10 . This case is shown in FIG. 2 .
- the back surface 4 of the semiconductor substrate 2 is provided with a second passivation layer 12 .
- the second passivation layer 12 consists of silicon dioxide.
- the second passivation layer 12 may also be formed of silicon nitride, amorphous silicon or a layer system of at least two of these materials.
- the semiconductor component 1 comprises a second contact structure 13 which is electrically conductive and is electrically connected to the back surface 4 of the semiconductor substrate 2 .
- the second passivation layer 12 is provided with holes 8 like those on the front surface 3 .
- the holes 8 in the second passivation layer 12 are preferably similar to the holes 8 in the first passivation layer 7 .
- the second contact structure 13 is thus electrically connected to the semiconductor substrate 2 via point-shaped back contacts 14 .
- the front contacts 10 and the back contacts 14 are arranged in such a way that in each case one of the point-shaped front contacts 10 and one of the point-shaped back contacts 14 are in line with each other in the direction of the surface normal 5 .
- the second contact structure 13 further comprises an electrically conducting film 15 .
- the film 15 is electrically connected to the back contacts 14 .
- the film 15 is soldered to said back contacts 14 or is bonded thereto by means of a conductive glue.
- the side of the film 15 facing the semiconductor substrate 2 is reflective. The light passing through the semiconductor component 1 is thus reflected by the film 15 , which further increases the efficiency of the semiconductor component 1 .
- the solar cell module 16 comprises at least two semiconductor components 1 according to the embodiments of the invention.
- the semiconductor components 1 are electrically connected to each other. They are in particular connected in series.
- the film 15 of the second contact structure 13 on the back surface 4 of a semiconductor component 1 is in each case conductively connected to the first contact structure 9 of the adjacent semiconductor component 1 .
- the film 15 is soldered to the first contact structure 9 or is bonded thereto by means of a conductive glue.
- the semiconductor substrate 2 in particular a silicon wafer, with the emitter 6 on the front surface 3 is the starting point for the method of producing the semiconductor component 1 .
- the semiconductor substrate 2 is passivated by means of silicon nitride and/or silicon dioxide and/or amorphous silicon which is applied to the front surface 3 and the back surface 4 thereof.
- the front surface 3 of the semiconductor substrate 2 is hereafter completely covered by the first passivation layer 7 .
- the back surface 4 of the semiconductor substrate 2 is completely covered by the second passivation layer 12 as well.
- the holes 8 are formed in the first passivation layer 7 by means of a laser.
- the laser is operated in pulses.
- a liquid-jet guided laser is provided for forming the holes 8 .
- the laser beam is moved along the liquid-air boundary of a liquid jet, the liquid jet serving as a liquid, fiber-optic wave conductor.
- a liquid-jet guided laser of this type even allows holes 8 with a diameter D K of a few ⁇ m to be formed in the first passivation layer 7 in a precise and controlled manner.
- the small surface area AK of the front contacts 10 ensures an improved passivation of the front surface 3 of the semiconductor substrate 2 compared to semiconductor components with linear contacts. Such an improved passivation results in a higher maximum voltage.
- the liquid jet advantageously contains doping materials such as phosphorous, arsenic, antimony or compounds thereof for doping the semiconductor substrate 2 in the region of the holes 8 during the formation of the holes 8 in the first passivation layer 7 .
- the holes 8 are formed in the second passivation layer 12 on the back surface 4 of the semiconductor substrate 2 in a similar manner.
- the liquid jet for forming the holes 8 in the second passivation layer 12 on the back surface 4 of the semiconductor substrate 2 however contains the doping materials boron, indium, aluminium, gallium or compounds thereof for forming a so-called back surface field in the region of the back surface 4 of the semiconductor substrate 2 .
- the doping materials in the liquid jet facilitate the establishment of contact between the semiconductor substrate 2 and the contact structures 9 , 13 .
- the first contact structure 9 is applied to the front side 3 of the semiconductor substrate 2 .
- a printing process in particular an extrusion printing process, is provided. Ink-jet printing, aerosol printing or screen printing processes are however applicable as well.
- the printed conductive traces 11 fill the holes 8 completely, thus forming the front contacts 10 which are in electrical contact with the front surface 3 of the semiconductor substrate 2 .
- the holes 8 in the second passivation layer 12 on the back surface 4 of the semiconductor substrate 2 are metallized point by point in a chemical metallization process.
- Metallization is in particular performed by means of nickel, cobalt, copper, silver, tin or a combination of these materials.
- metallization may also be performed by means of an electroplating process, in particular a light-induced electroplating process.
- the back contacts 14 are electrically interconnected by means of the conductive film 15 .
- the film 15 is soldered to the back contacts 14 or is bonded thereto by means of a conductive glue.
- Solar cell modules 16 comprising several semiconductor components 1 are produced by establishing an electrically conductive contact between the film 15 , which is electrically connected to the back contacts 14 of a semiconductor component 1 , and the first contact structure 9 on the front surface 3 of an adjacent semiconductor component 1 , in particular by soldering or bonding using a conductive glue.
- the front contacts 10 and the back contacts 14 are in each case arranged relative to each other in the direction of the surface normal 5 in such a way as to not overlap each other.
Abstract
A semiconductor component comprises a semiconductor substrate comprising a front surface, a back surface which is opposite thereto, and a surface normal which is perpendicular to the front and back surfaces, a first contact structure which is electrically conductive and is electrically connected to the front surface of the semiconductor substrate via at least one point-shaped front contact, and a second contact structure which is electrically conductive and is electrically connected to the back surface of the semiconductor substrate.
Description
- 1. Field of the Invention
- The invention relates to a semiconductor component and a solar cell module comprising at least two semiconductor components of this type. The invention further relates to a method of producing a semiconductor component.
- 2. Background Art
- Conventional solar cells have contacts on their front and back surfaces. The geometric details in particular of the contacts on the front surface of the solar cell have a great effect on the electrical properties and in particular the efficiency of the solar cell.
- It is therefore the object of the invention to provide a semiconductor component and a solar cell module with an improved contact structure. It is another object of the invention to provide a method of producing a semiconductor component of this type.
- This object is achieved by a semiconductor component comprising a semiconductor substrate comprising a front surface, a back surface which is opposite to said front surface and a surface normal which is perpendicular to the front and back surfaces, a first contact structure which is electrically conductive and is electrically connected to the front surface of the semiconductor substrate via at least one point-shaped front contact, and a second contact structure which is electrically conductive and is electrically connected to the back surface of the semiconductor substrate.
- Furthermore, this object is achieved by a solar cell module comprising at least two semiconductor components according to the invention, the semiconductor components being electrically interconnected.
- Last but not least, this object is achieved by a method of producing a semiconductor component, the method comprising the steps of providing a semiconductor substrate comprising a front surface, a back surface and an electrically insulating first passivation layer arranged on the front surface, forming holes in the first passivation layer by means of a laser and applying a first contact structure to the front surface of the semiconductor substrate, with the first contact structure being electrically connected to the semiconductor substrate in the region of the holes.
- The gist of the invention is to electrically connect a contact structure on the front surface of the semiconductor component to the semiconductor substrate via point-shaped contacts. For producing the point-shaped electrical contacts, it is provided to form holes in a first passivation layer on the front surface of the semiconductor substrate by means of a laser, with a contact structure being formed in these holes in a subsequent metallization process.
- Features and details of the invention will become apparent from the description of an embodiment by means of the drawings.
-
FIG. 1 is a cross-section through a semiconductor component according to a first embodiment; -
FIG. 2 is a longitudinal section along line II-II through the semiconductor component according toFIG. 1 ; and -
FIG. 3 is a cross-section through a solar cell module comprising two semiconductor components according toFIG. 1 . - The following is a description of a first embodiment of the invention with reference to
FIGS. 1 and 2 . Asemiconductor component 1 comprises a flat, in other words two-dimensional,semiconductor substrate 2 with afront surface 3, aback surface 4 which is opposite to saidfront surface 3, and a surface normal 5 which is perpendicular to thefront surface 3 and to theback surface 4. Thesemiconductor component 1 is in particular a solar cell. Thesemiconductor substrate 2 consists of a semiconductor material, in particular silicon. Other semiconductor materials are however conceivable as well. On thefront surface 3 is provided a region serving as anemitter 6. Theemitter 6 is doped in an appropriate manner. On thefront surface 3 of thesemiconductor substrate 2 is provided afirst passivation layer 7 which also serves as an anti-reflection layer. Thefirst passivation layer 7 is electrically insulating. Thefirst passivation layer 7 advantageously consists of silicon nitride. Thefirst passivation layer 7 is provided with a plurality ofholes 8. Perpendicular to the surface normal 5, theholes 8 have dimensions which are very small in relation to the dimensions of thesemiconductor substrate 2. They are therefore referred to as point-shaped in the following description. Theholes 8 are in particular circular. - The
semiconductor component 1 further comprises afirst contact structure 9 which is electrically conductive and is electrically connected to thefront surface 3 of thesemiconductor substrate 2 viafront contacts 10 in theholes 8. Thefront contacts 10 fill theholes 8 completely. They are therefore referred to as point-shaped in the following description as well. Similar to theholes 8, thefront contacts 10 have a diameter DK and a surface area AK in the range of 10 μm2 to 10000 μm2, in particular in the range of 100 μm2 to 1000 μm2. Thefirst contact structure 9 comprises at least one layer of nickel, cobalt, copper, silver, tin or a combination of these elements. Thefirst contact structure 9 in particular comprises multiple layers. The exact layout of thefirst contact structure 9 is described inDE 10 2007 031 958.6. - The
openings 8 with thefront contacts 10 are arranged in rows which are parallel to each other. They are in particular arranged at identical distances from each other. The point-shapedfront contacts 10 are thus arranged at the corner points of a regular grid which is in particular in the shape of a square. - The
first contact structure 9 further comprises linearconductive traces 11. The conductive traces 11 cover in each case one row of thefront contacts 10 to which they are electrically connected. Theconductive traces 11 have a width BL which is preferably greater than the diameter DK of thefront contacts 10. The ratio BL:DK is no more than 2, in particular no more than 1.5. - In order to reduce shading of the
front surface 3 due to thefirst contact structure 9, theconductive traces 11 may however also be narrower than the diameter DK of thefront contacts 10. This case is shown inFIG. 2 . - The
back surface 4 of thesemiconductor substrate 2 is provided with asecond passivation layer 12. Thesecond passivation layer 12 consists of silicon dioxide. Alternatively, thesecond passivation layer 12 may also be formed of silicon nitride, amorphous silicon or a layer system of at least two of these materials. - Corresponding to the
first contact structure 9 on thefront surface 3, thesemiconductor component 1 comprises asecond contact structure 13 which is electrically conductive and is electrically connected to theback surface 4 of thesemiconductor substrate 2. To this end, thesecond passivation layer 12 is provided withholes 8 like those on thefront surface 3. Theholes 8 in thesecond passivation layer 12 are preferably similar to theholes 8 in thefirst passivation layer 7. Thesecond contact structure 13 is thus electrically connected to thesemiconductor substrate 2 via point-shaped back contacts 14. - The
front contacts 10 and theback contacts 14 are arranged in such a way that in each case one of the point-shaped front contacts 10 and one of the point-shaped back contacts 14 are in line with each other in the direction of the surface normal 5. - The
second contact structure 13 further comprises an electrically conductingfilm 15. Thefilm 15 is electrically connected to theback contacts 14. To this end, thefilm 15 is soldered to said backcontacts 14 or is bonded thereto by means of a conductive glue. The side of thefilm 15 facing thesemiconductor substrate 2 is reflective. The light passing through thesemiconductor component 1 is thus reflected by thefilm 15, which further increases the efficiency of thesemiconductor component 1. - The following is a description of a
solar cell module 16 with reference toFIG. 3 . Thesolar cell module 16 comprises at least twosemiconductor components 1 according to the embodiments of the invention. Thesemiconductor components 1 are electrically connected to each other. They are in particular connected in series. To this end, thefilm 15 of thesecond contact structure 13 on theback surface 4 of asemiconductor component 1 is in each case conductively connected to thefirst contact structure 9 of theadjacent semiconductor component 1. To this end, thefilm 15 is soldered to thefirst contact structure 9 or is bonded thereto by means of a conductive glue. - The following is a description of a method of producing the
semiconductor component 1. Thesemiconductor substrate 2, in particular a silicon wafer, with theemitter 6 on thefront surface 3 is the starting point for the method of producing thesemiconductor component 1. Thesemiconductor substrate 2 is passivated by means of silicon nitride and/or silicon dioxide and/or amorphous silicon which is applied to thefront surface 3 and theback surface 4 thereof. Thefront surface 3 of thesemiconductor substrate 2 is hereafter completely covered by thefirst passivation layer 7. Likewise, after passivation thereof, theback surface 4 of thesemiconductor substrate 2 is completely covered by thesecond passivation layer 12 as well. - Afterwards, the
holes 8 are formed in thefirst passivation layer 7 by means of a laser. To this end, the laser is operated in pulses. According to the invention, a liquid-jet guided laser is provided for forming theholes 8. In this process, the laser beam is moved along the liquid-air boundary of a liquid jet, the liquid jet serving as a liquid, fiber-optic wave conductor. A liquid-jet guided laser of this type even allowsholes 8 with a diameter DK of a few μm to be formed in thefirst passivation layer 7 in a precise and controlled manner. The small surface area AK of thefront contacts 10 ensures an improved passivation of thefront surface 3 of thesemiconductor substrate 2 compared to semiconductor components with linear contacts. Such an improved passivation results in a higher maximum voltage. - The liquid jet advantageously contains doping materials such as phosphorous, arsenic, antimony or compounds thereof for doping the
semiconductor substrate 2 in the region of theholes 8 during the formation of theholes 8 in thefirst passivation layer 7. - The
holes 8 are formed in thesecond passivation layer 12 on theback surface 4 of thesemiconductor substrate 2 in a similar manner. The liquid jet for forming theholes 8 in thesecond passivation layer 12 on theback surface 4 of thesemiconductor substrate 2 however contains the doping materials boron, indium, aluminium, gallium or compounds thereof for forming a so-called back surface field in the region of theback surface 4 of thesemiconductor substrate 2. - The doping materials in the liquid jet facilitate the establishment of contact between the
semiconductor substrate 2 and thecontact structures - After formation of the
holes 8 in the passivation layers 7, 12, thefirst contact structure 9 is applied to thefront side 3 of thesemiconductor substrate 2. To this end, a printing process, in particular an extrusion printing process, is provided. Ink-jet printing, aerosol printing or screen printing processes are however applicable as well. The printed conductive traces 11 fill theholes 8 completely, thus forming thefront contacts 10 which are in electrical contact with thefront surface 3 of thesemiconductor substrate 2. - The
holes 8 in thesecond passivation layer 12 on theback surface 4 of thesemiconductor substrate 2 are metallized point by point in a chemical metallization process. Metallization is in particular performed by means of nickel, cobalt, copper, silver, tin or a combination of these materials. Instead of a chemical metallization process, metallization may also be performed by means of an electroplating process, in particular a light-induced electroplating process. - Finally, the
back contacts 14 are electrically interconnected by means of theconductive film 15. To this end, thefilm 15 is soldered to theback contacts 14 or is bonded thereto by means of a conductive glue. -
Solar cell modules 16 comprisingseveral semiconductor components 1 are produced by establishing an electrically conductive contact between thefilm 15, which is electrically connected to theback contacts 14 of asemiconductor component 1, and thefirst contact structure 9 on thefront surface 3 of anadjacent semiconductor component 1, in particular by soldering or bonding using a conductive glue. - In an alternative embodiment which is not shown in the Figures, the
front contacts 10 and theback contacts 14 are in each case arranged relative to each other in the direction of the surface normal 5 in such a way as to not overlap each other.
Claims (17)
1. A semiconductor component (1) comprising
a. a semiconductor substrate (2) comprising
i. a front surface (3);
ii. a back surface (4) which is opposite to said front surface (3); and
iii. a surface normal (5) which is perpendicular to the front and back surfaces (3, 4);
b. a first contact structure (9) which
i. is electrically conductive; and
ii. is electrically connected to the front surface (3) of the semiconductor substrate (2) via at least one point-shaped front contact (10); and
c. a second contact structure (13) which
i. is electrically conductive; and
ii. is electrically connected to the back surface (4) of the semiconductor substrate (2).
2. A semiconductor component (1) according to claim 1 , wherein the point-shaped front contacts (10) have a contact surface area AK in the range of 10 μm2 to 10000 μm2.
3. A semiconductor component according to claim 2 , wherein the contact surface area AK of the point-shaped front contacts (10) is in the range of 100 μm2 to 1000 μm2.
4. A semiconductor component (1) according to claim 1 , wherein the second contact structure (13) is electrically connected to the semiconductor substrate (2) via point-shaped back contacts (14).
5. A semiconductor component (1) according to claim 4 , wherein in each case one of the point-shaped front contacts (10) and one of the point-shaped back contacts (14) are in line with each other in the direction of the surface normal (5).
6. A semiconductor component (1) according to claim 4 , wherein the point-shaped front contacts (10) and the point-shaped back contacts (14) are in each case arranged relative to each other in the direction of the surface normal (5) in such a way as to not overlap each other.
7. A semiconductor component (1) according to claim 1 , wherein the point-shaped front contacts (10) are arranged in holes (8) in an antireflection layer (7).
8. A semiconductor component (1) according to claim 1 , wherein the point-shaped front contacts (10) are arranged in rows which are parallel to each other.
9. A semiconductor component (1) according to claim 1 , wherein the point-shaped front contacts (10) are arranged at the corner points of a regular grid.
10. A semiconductor component (1) according to claim 9 , wherein the regular grid is in the shape of a square.
11. A semiconductor component (1) according to claim 1 , wherein the second contact structure (13) comprises an electrically conducting film (15).
12. A semiconductor component (1) according to claim 11 , wherein the film (15) is reflective at least on its side facing the semiconductor substrate (2).
13. A solar cell module (16) comprising at least two semiconductor components (1) according to the invention, the semiconductor components (1) being electrically interconnected.
14. A solar cell module (16) according to claim 13 , wherein the semiconductor components (1) are connected in series by means of an in each case electrically conductive connection between the film (15) of one of the semiconductor components (1) and the first contact structure (9) of the adjacent semiconductor component (1).
15. A method of producing a semiconductor component (1), the method comprising the following steps:
providing a semiconductor substrate (2) comprising
a front surface (3);
a back surface (4); and
an electrically insulating first passivation layer (7) arranged on the front surface (3);
forming holes (8) in the first passivation layer (7) by means of a laser;
applying a first contact structure (9) to the front surface (3) of the semiconductor substrate (2);
with the first contact structure (9) being electrically connected to the semiconductor substrate (2) in the region of the holes (8).
16. A method according to claim 15 , wherein a liquid-jet guided laser is provided for forming the holes (8).
17. A method according to claim 16 , wherein a doping material is injected into the semiconductor substrate (2) in the region of the holes (8) by means of the liquid-jet guided laser.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102008024053A DE102008024053A1 (en) | 2008-05-16 | 2008-05-16 | Point-contact solar cell |
DE102008024053.2 | 2008-05-16 |
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US20090283143A1 true US20090283143A1 (en) | 2009-11-19 |
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Family Applications (1)
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US12/465,035 Abandoned US20090283143A1 (en) | 2008-05-16 | 2009-05-13 | Point contact solar cell |
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US (1) | US20090283143A1 (en) |
EP (1) | EP2120269A2 (en) |
JP (1) | JP2009278114A (en) |
DE (1) | DE102008024053A1 (en) |
Cited By (4)
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WO2011134700A3 (en) * | 2010-04-26 | 2012-06-07 | Robert Bosch Gmbh | Solar cell |
CN102610661A (en) * | 2011-01-25 | 2012-07-25 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Lamination-recombination passive film used for front surface of single-crystalline-silicon solar cell |
CN102884636A (en) * | 2010-05-06 | 2013-01-16 | 原子能和代替能源委员会 | Photovoltaic cell comprising a region suspended by a conductive pattern and production process |
EP2538447A3 (en) * | 2011-06-20 | 2013-03-06 | LG Electronics Inc. | Solar cell and method for manufacturing the same |
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DE102008062591A1 (en) | 2008-08-08 | 2010-03-04 | Deutsche Cell Gmbh | Semiconductor device |
DE102008046480A1 (en) | 2008-09-09 | 2010-03-11 | Solarworld Innovations Gmbh | A method for producing a solderable LFC solar cell backside and solar module interconnected from such LFC solar cells |
EP2498296A1 (en) | 2011-03-09 | 2012-09-12 | Deutsche Solar AG | Method for producing electrically conductive contact structures on a substrate surface |
DE202011000518U1 (en) | 2011-03-09 | 2012-01-18 | Deutsche Cell Gmbh | Electrically conductive contact structures on a substrate surface |
DE102020118654A1 (en) | 2020-07-15 | 2022-03-31 | Hanwha Q Cells Gmbh | PECVD process for depositing an amorphous silicon layer on a substrate |
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Cited By (8)
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WO2011134700A3 (en) * | 2010-04-26 | 2012-06-07 | Robert Bosch Gmbh | Solar cell |
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CN102884636A (en) * | 2010-05-06 | 2013-01-16 | 原子能和代替能源委员会 | Photovoltaic cell comprising a region suspended by a conductive pattern and production process |
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CN102610661A (en) * | 2011-01-25 | 2012-07-25 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Lamination-recombination passive film used for front surface of single-crystalline-silicon solar cell |
EP2538447A3 (en) * | 2011-06-20 | 2013-03-06 | LG Electronics Inc. | Solar cell and method for manufacturing the same |
US9825190B2 (en) | 2011-06-20 | 2017-11-21 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2009278114A (en) | 2009-11-26 |
EP2120269A2 (en) | 2009-11-18 |
DE102008024053A1 (en) | 2009-12-17 |
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