US20090321364A1 - Systems and methods for filtering nanowires - Google Patents
Systems and methods for filtering nanowires Download PDFInfo
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- US20090321364A1 US20090321364A1 US12/105,525 US10552508A US2009321364A1 US 20090321364 A1 US20090321364 A1 US 20090321364A1 US 10552508 A US10552508 A US 10552508A US 2009321364 A1 US2009321364 A1 US 2009321364A1
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Abstract
Description
- This application claims the benefit under 35 U.S.C. § 119(e) of U.S. provisional patent application Ser. No. 60/913,231, filed Apr. 20, 2007, the content of which application is herein incorporated by reference in its entirety.
- 1. Technical Field
- This description generally relates to the field of nanowire manufacturing, and more particularly to filtering solutions containing nanowires.
- 2. Description of the Related Art
- Conductive and non-conductive nanowires may be used in a variety of applications. These high aspect ratio nano-structures may be used to form transparent conductors, similar to those manufactured currently using indium tin oxide (ITO). They may prove useful in quantum computing, sensing applications, flexible electronics and integration with biotechnology. In addition, they may someday be used to create high speed, high density microprocessors.
- Current methods of manufacturing such nanowires often result in polydisperse solutions containing a mixture of structures of various shapes and sizes. These structures may include reaction byproducts, unreacted precursors, synthesis catalysts, etc., in addition to nanowires having the desired dimensions. In many applications, a more uniform solution of high aspect ratio nanowires is desirable. For example, depending on the size and amount, low aspect ratio nano-structures may tend to worsen the optical properties (e.g., higher haze, lower contrast ratio and lower transmission) in transparent conductors without improving conductivity. In addition, the solvent used in the manufacturing process may be unsuitable for later applications of the nanowires. For example, a solvent useful in nanowire synthesis may need to be exchanged before applying the nanowires in a surface coating.
- Unfortunately, many conventional methods of separating/filtering particles and solvents (e.g., tortuous path filtration, conventional filtration, chromatography, sedimentation, centrifugation, etc.) are inefficient for or incapable of separating high aspect ratio nanowires from other structures in a solution.
- Accordingly, there remains a need to effectively filter nanowires from a solution containing both nanowires and other structures. There is also a need to effectively exchange the solvent in a solution containing nanowires.
- In one embodiment, a method of filtering a solution containing nanowires and a first set of contaminant particles comprises: providing the solution; generating a flow of the solution; and filtering the solution by directing the flow through a passage defining an aperture having a width less than at least one dimension of the first set of contaminant particles.
- In another embodiment, a nanowire filtering system comprises: a source container for holding a solution containing nanowires and a first set of contaminant particles; and a nanowire filter passage communicatively coupled to the source container for receiving the solution, the nanowire filter passage defined at least in part by: a first plate; and a second plate disposed adjacent the first plate with a minimum separation distance between the first plate and the second plate of less than at least one dimension of the first set of contaminant particles.
- In yet another embodiment, a method of filtering a solution containing nanowires comprises: providing the solution; generating a primary flow of the solution; and filtering the solution by directing the primary flow over a micro-structured surface configured to filter the solution.
- In another embodiment, a nanowire filtering system comprises: a source container for holding a solution containing nanowires; and a nanowire filter communicatively coupled to the source container for receiving the solution, the nanowire filter including: a rotatable tube defining a passage for the solution; a micro-structured surface lining an inside of the rotatable tube; a substantially helical surface adjacent the micro-structured surface and extending at least partially into the passage; and a drive member adapted to turn the rotatable tube.
- In yet another embodiment, a nanowire filtering system comprises: a source container for holding a solution containing nanowires; and a nanowire filter communicatively coupled to the source container for receiving the solution, the nanowire filter including: an elongate channel defining a passage for the solution flowing along a long axis, the elongate channel having a lower surface including a plurality of parallel ridges disposed at an angle to the long axis; wherein the plurality of parallel ridges at least partially define a plurality of openings from the elongate channel.
- In yet another embodiment, a nanowire filtering system comprises: a source container for holding a solution containing nanowires; and a nanowire filter communicatively coupled to the source container for receiving the solution, the nanowire filter including: an elongate channel defining a passage for the solution; and a collection chamber defined in part by an outer surface of the elongate channel, the collection chamber communicatively coupled to the elongate channel via a plurality of openings having an average diameter of greater than 5 μm.
- In the drawings, identical reference numbers identify similar elements or acts. The sizes and relative positions of elements in the drawings are not necessarily drawn to scale. For example, the shapes of various elements and angles are not drawn to scale, and some of these elements are arbitrarily enlarged and positioned to improve drawing legibility. Further, the particular shapes of the elements as drawn are not intended to convey any information regarding the actual shape of the particular elements, and have been selected solely for ease of recognition in the drawings.
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FIG. 1 is a schematic diagram of a nanowire filtering system, according to one illustrated embodiment. -
FIG. 2 is a schematic diagram of another nanowire filtering system, according to another illustrated embodiment. -
FIG. 3 is a perspective view of an example micro-structured nanowire filter, according to one illustrated embodiment. -
FIG. 4 is a longitudinal cross-section of the nanowire filter ofFIG. 3 . -
FIG. 5 is radial cross-section of the nanowire filter ofFIG. 3 . -
FIG. 6 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment. -
FIG. 7 is a bottom view of the nanowire filter ofFIG. 6 . -
FIG. 8 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment. -
FIG. 9 is a front view of the nanowire filter ofFIG. 8 . -
FIG. 10 illustrates schematically nanowires and other nano-particles flowing in a solution over the nanowire filter ofFIG. 8 . -
FIG. 11 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment, with inner portions of the nanowire filter shown in dashed lines. -
FIG. 12 is a radial cross-section of the nanowire filter ofFIG. 11 . -
FIG. 13 is a longitudinal cross-section of the nanowire filter ofFIG. 11 . -
FIG. 14 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment. -
FIG. 15 is a top view of the nanowire filter ofFIG. 14 . -
FIG. 16 is an enlarged, schematic view of a bottom surface of the nanowire filter ofFIG. 14 in operation. -
FIG. 17 is a perspective view of an example nanowire filter having a narrow aperture, according to one illustrated embodiment. -
FIG. 18 is a cross-section of the nanowire filter ofFIG. 17 . -
FIG. 19 illustrates schematically nanowires and other particles flowing in a solution through the nanowire filter ofFIG. 17 . -
FIG. 20 is a perspective view of an example micro-structured nanowire filter having a narrow aperture, according to one illustrated embodiment. -
FIG. 21 is a bottom view of the nanowire filter ofFIG. 20 . -
FIG. 22 is a perspective view of another example nanowire filter having a narrow aperture, according to one illustrated embodiment. -
FIG. 23 is a cross-sectional, schematic view of the nanowire filter ofFIG. 22 in operation. -
FIG. 24 is a top view of the nanowire filter ofFIG. 22 . -
FIG. 25 is a perspective view of another example nanowire filter having a narrow aperture, according to one illustrated embodiment. -
FIG. 26 is a side view of the nanowire filter ofFIG. 25 . -
FIG. 27 is a perspective view of another example nanowire filter having a narrow aperture, according to one illustrated embodiment. -
FIG. 28 is a side view of the nanowire filter ofFIG. 27 . -
FIG. 29 is a perspective view of another example nanowire filter having a plurality of narrow apertures, according to one illustrated embodiment. -
FIG. 30 is a side view of the nanowire filter ofFIG. 29 . -
FIG. 31 is a flow diagram illustrating a method of filtering a solution containing nanowires using a micro-structured nanowire filter, according to one illustrated embodiment -
FIG. 32 is a flow diagram illustrating another method of filtering a solution containing nanowires using a nanowire filter having a narrow aperture, according to another illustrated embodiment. - In the following description, certain specific details are set forth in order to provide a thorough understanding of various disclosed embodiments. However, one skilled in the relevant art will recognize that embodiments may be practiced without one or more of these specific details, or with other methods, components, materials, etc. In other instances, well-known structures and methodologies associated with nanowires, filters, pumps, and fluid dynamics have not been shown or described in detail to avoid unnecessarily obscuring descriptions of the embodiments.
- Unless the context requires otherwise, throughout the specification and claims which follow, the word “comprise” and variations thereof, such as, “comprises” and “comprising” are to be construed in an open, inclusive sense, that is, as “including, but not limited to.”
- Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
- As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” include plural referents unless the context clearly dictates otherwise. It should also be noted that the term “or” is generally employed in its sense including “and/or” unless the context clearly dictates otherwise.
- The headings and Abstract of the Disclosure provided herein are for convenience only and do not interpret the scope or meaning of the embodiments.
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FIG. 1 illustrates an exemplarynanowire filtering system 10. As illustrated, thenanowire filtering system 10 comprises asource container 12, apump 14 and ananowire filter 16. In one embodiment, the components of thenanowire filtering system 10 function together to filter a solution containing nanowires, removing undesirable contaminant particles and/or solvent from the solution to achieve a more uniform solution of high aspect ratio nanowires. - The
source container 12 may comprise any of a variety of containers for holding a solution containing nanowires. For example, thesource container 12 may comprise a stainless steel or glass vessel, within which the nanowires were formed. In another embodiment, thesource container 12 may simply comprise tubing through which the solution containing nanowires may travel. - The solution containing nanowires within the
source container 12 may comprise any liquid carrying nanowires. In one example, the solution containing the nanowires may come directly from a synthesis reaction prior to any formulation. The solution containing nanowires may include, by weight, from 0.0025% to 0.1% surfactant (e.g., a preferred range is from 0.0025% to 0.05% of ZONYL® FSO-100), from 0.02% to 4% viscosity modifier (e.g., a preferred range is 0.02% to 0.5% of hydroxypropyl methyl cellulose (“HPMC”)), from 94.5% to 99.0% solvent and from 0.05% to 1.4% nanowires. Representative examples of suitable surfactants include ZONYL® FSN, ZONYL® FSO, ZONYL® FSH, TRITON® (x100, x114, x45), DYNOL™ (604, 607), n-Dodecyl b-D-maltoside and Novek. Examples of suitable viscosity modifiers include HPMC, methyl cellulose, xanthan gum, polyvinyl alcohol, carboxy methyl cellulose, and hydroxy ethyl cellulose. Examples of suitable solvents include water, alcohol (e.g., isopropanol), ketones, ether, or hydrocarbon or aromatic solvents (e.g., benzene, toluene or xylene). In addition, the solvent may be volatile, having a boiling point of no more than 200° C., no more than 150° C., or no more than 100° C. - The amount of solvent can be adjusted to provide a desired viscosity and concentration of nanowires in the solution. For example,
different pumps 14 anddifferent nanowire filters 16 may function optimally on different concentration solutions. In one embodiment, however, the relative ratios of the other ingredients may remain the same. In particular, the ratio of the surfactant to the viscosity modifier may be kept in the range of about 80 to about 0.01; the ratio of the viscosity modifier to the nanowires may remain in the range of about 5 to about 0.000625; and the ratio of the nanowires to the surfactant may be in the range of about 560 to about 5. In one embodiment, the viscosity range for the nanowire solution may be from 1 to 100 cP. - A number of contaminant particles and other structures may also be present in the solution, including low aspect ratio nano-particles (e.g., short rods, discs or spheres) made from the same material as the nanowires, as well as synthesis catalysts, reaction byproducts and unreacted precursors. For many applications, the presence of such contaminant particles may be undesirable.
- As used herein, a “nanowire” refers generally to a nano-structure having a high aspect ratio (e.g., higher than 10). Examples of non-metallic nanowires include, but are not limited to, carbon nanotubes (CNTs), metal oxide nanowires, conductive polymer fibers and the like. Metallic nanowires may comprise elemental metals, metal alloys or metal compounds. Suitable metal nanowires can be based on any metal or combinations and/or alloys of metals, including without limitation, silver, gold, copper, nickel, gold-plated silver, gold-silver alloys, platinum, and palladium.
- In one embodiment, at least one cross-sectional dimension of a nanowire is less than 500 nm. In another embodiment, at least one cross-sectional dimension of a nanowire is less than 200 nm, and in yet another embodiment, at least one cross-sectional dimension is less than 100 nm. As noted above, the nanowire may have an aspect ratio (length:diameter) of greater than 10. In another embodiment, the aspect ratio may be greater than 50. In yet another embodiment, the aspect ratio may be greater than 100. Nanowires may have aspect ratios anywhere in the range of 10 to 100,000.
- The nanowires can be prepared by any of a number of methods. In one embodiment, large-scale production of silver nanowires of uniform size may be carried out according to the methods described in, e.g., Xia, Y. et al., Chem. Mater. (2002), vol. 14, 4736-4745, and Xia, Y. et al., Nanoletters (2003) vol. 3(7), 955-960, the contents of which are hereby incorporated herein by reference in their entirety.
- In another embodiment, silver nanowires may be synthesized in a batch process by the reduction of silver nitrate in propylene glycol. The chemistry of such a process is described in co-pending U.S. patent application Ser. No. 11/766,552, titled METHODS OF CONTROLLING NANOSTRUCTURE FORMATIONS AND SHAPES, filed Jun. 21, 2007, the contents of which are hereby incorporated herein by reference in their entirely.
- Nanowire formation may be accomplished by the use of a surface active polymer (e.g., polyvinylpyrrolidone (“PVP”)) and chloride (e.g., added in the form of tetra-n-butylammonium chloride (“TBAC”)). The process may be carried out in an agitated, jacketed glass reactor including glass impellers, an automated temperature controller, a small glass feed vessel (which may also be agitated), and a precision metering pump. Propylene glycol, PVP, and TBAC may first be added to the reactor and heated to a target temperature (e.g., 100° C.) under agitation. Meanwhile, a solution of silver nitrate and propylene glycol may be prepared in the small glass feed vessel. Once the silver nitrate is fully dissolved, and the reactor has stabilized at the target temperature, the silver nitrate mixture may be added to the reactor at a controlled rate
- The solution may then react under agitation at atmospheric pressure. As the reaction progresses, nano-particles may form first, followed by nanowires that grow to the desired length and width. Nano-particles may be indicated by an orange-brown or brown-green color, and, as nanowires form, the mixture may become increasingly grey and metallic in appearance. Once the target nanowire morphology is achieved (e.g., as determined by dark field optical microscopy), the reaction may be quenched by the rapid addition of water, which both cools the reaction mixture and inhibits further reaction. Reaction temperature, reaction time, and silver nitrate addition rate may be varied to control the dimensions of the resulting nanowires.
- Following reaction, the reactor may be cleaned using a clean-in-place system consisting of a spray ball and a persistaltic pump. Residue from previous reactions may have adverse effects on the synthesis process.
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Raw Material Weight % Quantity Propylene Glycol 79.0% 23700 g PVP 0.5% 150 g TBAC 0.01% 3.0 g AgNO3 0.83% 250 g Propylene Glycol 3.0% 900 g (added with AgNO3) Deionized Water 16.7% 5000 g - Propylene glycol was first added to a 30 L glass reactor. PVP and TBAC were also added to the glass reactor. The agitator for the glass reactor was turned to 100 rpm, and the solution in the glass reactor was heated to 100° C. While the solution was heating, propylene glycol and silver nitrate were premixed in a 4 L glass feed vessel until all of the solids were dissolved. Once the solution in the reactor reached a stable 100° C., the propylene glycol/silver nitrate solution were added to the reactor via a metering pump. 900 mL of propylene glycol and silver nitrate were added to the reactor at an addition rate of 45 mL/min for 20 minutes. Starting a timer at the start of the silver nitrate addition, the solution was mixed for 4 hours in the reactor before the heating was turned off and the reaction quenched with deionized water.
- The average length of the resulting silver nanowires was 24 μm with a standard deviation of 15 μm. The average width of the resulting silver nanowires was 65 nm with a standard deviation of 14 nm. The estimated yield of silver converted into silver nanowires was 50 wt %.
- Alternatively, nanowires may be prepared using biological templates (or biological scaffolds) that can be mineralized. For example, biological materials such as viruses and phages can function as templates to create metal nanowires. In certain embodiments, the biological templates can be engineered to exhibit selective affinity for a particular type of material, such as a metal or a metal oxide. More detailed descriptions of biofabrication of nanowires can be found in, e.g., Mao, C. B. et al., “Virus-Based Toolkit for the Directed Synthesis of Magnetic and Semiconducting Nanowires,” (2004) Science, 303, 213-217; Mao, C. B. et al., “Viral Assembly of Oriented Quantum Dot Nanowires,” (2003) PNAS, vol. 100, no. 12, 6946-6951; U.S. patent application Ser. No. 10/976,179 and U.S. provisional patent application Ser. No. 60/680,491, all of which are hereby incorporated herein by reference in their entireties.
- Regardless of the exact methodology used for nanowire synthesis, the resulting solution may be a polydisperse solution containing a mixture of contaminant particles and nanowires of various shapes and sizes. For many applications, purification may be desirable in order to achieve a more uniform solution of high aspect ratio nanowires. In some embodiments, solubilized ion contaminants (e.g., Cl−, Ag+, NO3−) that might lead to nanowire degradation should also be removed. In addition, exchange of the solvent may be desirable based on the particular application for the nanowire solution.
- In one embodiment, the
source container 12 may serve as the reactor within which the nanowires are formed. However, in other embodiments, a solution containing nanowires may be generated in another container/reactor and be subsequently transferred to thesource container 12. In yet another embodiment, the solution containing nanowires need not comprise the solution within which the nanowires were originally formed. Thus, thenanowire filtering system 10 may be used to filter any solution containing nanowires. - As illustrated, the
nanowire filtering system 10 may include apump 14 to generate a flow of the solution containing nanowires from thesource container 12 to thenanowire filter 16. Thepump 14 may comprise any of a variety of liquid pumps. For example, thepump 14 may comprise a bellows pump, a centrifugal pump, a diaphragm pump, a drum pump, a flexible liner/impeller pump, a gear pump, a peristaltic pump, a piston pump, a progressing cavity pump, a rotary lobe pump, a rotary vane pump, etc. - In another embodiment, the
nanowire filtering system 10 may not include a pump. For example, in one embodiment, a flow of the solution containing nanowires may be generated by gravity. In another embodiment, thepump 14 may be incorporated into thenanowire filter 16. - The
nanowire filter 16 may comprise any of a variety of filters configured to separate nanowires from contaminant particles and other nano-structures. Thenanowire filter 16 may be further configured to separate the nanowires from a solvent in order to facilitate a solvent exchange. In one embodiment, thenanowire filter 16 may be configured to yield aretentate 18, which comprises a more uniform solution containing nanowires, and a filtrate (not shown), which may comprise solvent and/or the contaminant particles filtered from the solution. Theretentate 18 may have a higher weight percentage of nanowires than the flow ofsolution 20 entering thenanowire filter 16. As discussed below with reference toFIGS. 3-30 , thenanowire filter 16 may include a plurality of micro-structures and/or may include one or more narrow apertures configured to filter the solution. Thenanowire filter 16 may also, in some embodiments, comprise a plurality of nanowire filters arranged in parallel or in series to filter the solution containing nanowires. - In one embodiment, the
nanowire filter 16 may filter out nanowires having aspect ratios below a certain threshold. For example, in one embodiment, thenanowire filter 16 may generally filter out nanowires having aspect ratios lower than 100. The aspect ratio targeted by aparticular nanowire filter 16 may be selected based upon an application for the solution. - In one embodiment, the
retentate 18 may be collected in a container (not shown) for subsequent processing or use. For example, in one embodiment, theretentate 18 may be added to a solvent useful in coating formulations. In another embodiment, as illustrated inFIG. 2 , ananowire filtering system 22 may recirculate the retentate 18 from thenanowire filter 16 back to thesource container 12 for further filtering. In such an embodiment, the filtering and subsequent recirculating of the solution containing nanowires may continue for a predetermined time period, or until the solution containing nanowires has reached a desired purity. In order to maintain a viscosity of the solution or in order to effect a solvent exchange, solvent (not shown) may also be added to the nanowire filtering system 22 (e.g., at the source container 12) as theretentate 18 is recirculated. In one embodiment, the filtering, recirculating, and addition of a new solvent may continue until the solution containing nanowires achieves a predetermined concentration of the new solvent. -
FIG. 3 is a perspective view of amicro-structured nanowire filter 300, which may be used in thenanowire filtering system 10 or thenanowire filtering system 22.FIGS. 4 and 5 present longitudinal and radial cross-sections, respectively, of thenanowire filter 300 to facilitate an understanding of its inner structure. As illustrated, thenanowire filter 300 comprises anelongate channel 302 having anentrance 308 and anexit 310 and defining a passage for a primary flow (designated by the arrow 301) of the solution containing nanowires. Theelongate channel 302 may include a micro-structured surface between theentrance 308 andexit 310 having a plurality ofopenings 306 defined therethrough. In one embodiment, theelongate channel 302 is surrounded by a plurality ofcollection chambers 304 communicatively coupled to theelongate channel 302 by the plurality ofopenings 306. Thenanowire filter 300 may, of course, be formed from a variety of different materials, including metallic and non-metallic materials, and may be coupled to the rest of thenanowire filtering system 10 by any of a variety of fluid connectors, tubes and/or conduits. - The plurality of
openings 306 through the surface of theelongate channel 302 are micro-structures configured to filter the solution. The terms micro-structures and micro-structured may reference any small structures formed in, on or through a surface that may interfere with a fluid flow. For example, micro-structures may refer to structures having at least one dimension less than 1 cm. In the illustrated embodiment, the micro-structures comprise the plurality ofopenings 306. However, in other embodiments, micro-structures may comprise a plurality of niches, valleys, detents, peaks, protrusions, etc. Other examples of micro-structures and micro-structured surfaces are presented with reference toFIGS. 6-16 . - The size, arrangement and configuration of the
openings 306 may be varied to filter different contaminant particles. In one embodiment, the size of theopenings 306 may be chosen based at least in part on the desired length/diameter/aspect ratio of the nanowires, the size/aspect ratio of the contaminant particles that should be filtered from the solution as well as a viscosity and flow rate of the solvent. For example, theopenings 306 may have an average diameter greater than 5 μm because the expected filtrate may have a diameter up to approximately 5 μm. In another embodiment, theopenings 306 may have an average diameter greater than 10 μm. As the diameter of theopenings 306 increases, a greater secondary flow may be generated through theopenings 306, and thenanowire filter 300 may filter out more contaminant particles and solvent on each pass. However, withlarger openings 306, thenanowire filter 300 may also become less selective, and more nanowires may be lost in the filtrate. - In one embodiment, the
elongate channel 302 may be approximately 3 cm in diameter, and approximately 50 cm long. In other embodiments, the length and diameter of theelongate channel 302 may be varied. As theelongate channel 302 is lengthened or its diameter made smaller, a greater amount of filtrate may be separated from the primary flow of solution as the solution passes through thenanowire filter 300. However, a greater quantity of nanowires may also be lost in the filtrate. The length, diameter and geometry of theelongate channel 302 may therefore be varied to achieve desired characteristics for thenanowire filter 300. - In one embodiment, as illustrated, the
elongate channel 302 may comprise a cylindrical passage, and theopenings 306 may extend along the entire surface of this cylindrical passage. Of course, in other embodiments, other configurations are possible. Theelongate channel 302 may have a variety of shapes, and theopenings 306 may be formed on only a portion of the channel's surface. For example, in one embodiment, theopenings 306 may be formed only along a bottom half of the surface of theelongate channel 302, as the filtrate may preferentially flow through theseopenings 306 by gravity. In another embodiment, theopenings 306 may be formed along only a portion of the entire length of theelongate channel 302. - As illustrated, eight
collection chambers 304 are defined at least in part by an outer surface of theelongate channel 302. The eightcollection chambers 304 may be separated by radially extending fins extending from the outer surface of theelongate channel 302 to anouter wall 312 of thenanowire filter 300. Of course, in other embodiments, thecollection chambers 304 may be configured differently. In one embodiment, more orfewer collection chambers 304 may be formed around theelongate channel 302, and they may have different geometries. In another embodiment, thecollection chambers 304 need not be integrally formed with theelongate channel 302. For example, theelongate channel 302 may be suspended over one or more collection chambers, and, in operation, the filtrate emerging from theopenings 306 of theelongate channel 302 may fall into the collection chambers. - During operation, a
primary flow 301 of the solution may pass through theentrance 308, through theelongate channel 302 and emerge from theexit 310 asretentate 18. Meanwhile, the plurality ofopenings 306 may create a secondary flow of at least a portion of the solution, i.e., the filtrate, through the plurality ofopenings 306 and into thecollection chambers 304. In one embodiment, thecollection chambers 304 may transfer the secondary flow to a filtrate container (not shown). - Although the diameter of the nanowires may be equal to or smaller than the diameter of the filtered contaminant particles, the nanowires (due to their high aspect ratio) may substantially align with the
primary flow 301 passing through theelongate channel 302, and this alignment may inhibit or effectively prevent the nanowires from passing through the plurality ofopenings 306. In one embodiment, theprimary flow 301 of the solution through theelongate channel 302 may be greater than the secondary flow through the plurality ofopenings 306 into thecollection chambers 304 to take advantage of this alignment. For example, in one embodiment, theprimary flow 301 may be at least 100 times greater than the secondary flow of the solution. This relatively high flow rate through theelongate channel 302 may help to align the nanowires with theprimary flow 301 and prevent the nanowires from inadvertently passing through the plurality ofopenings 306. - In one embodiment, if the diameter of the
openings 306 is increased, the primary flow rate may be correspondingly increased to help prevent nanowires from slipping through theenlarged openings 306. Thus, the size of theopenings 306 and the primary flow rate through theelongate channel 302 may be varied in different embodiments of thenanowire filter 300 in order to change its filtering characteristics. -
FIG. 6 is a perspective view of anothermicro-structured nanowire filter 600 that operates similarly to thenanowire filter 300 ofFIGS. 3-5 .FIG. 7 is a bottom view of thenanowire filter 600. In one embodiment, thenanowire filter 600 comprises anelongate channel 606 having anentrance 608 and anexit 610 and defining a passage for a primary flow (designated by the arrow 601) of the solution containing nanowires. Theelongate channel 606 may, in turn, be defined at least in part by amicro-structured surface 602 comprising a plurality ofopenings 604. - In one embodiment, the
openings 604 may have an average diameter of approximately 5 μm, and theelongate channel 606 may be approximately 50 cm in length. Of course, as described above with respect to thenanowire filter 300, the size and shape of theopenings 604, the size and shape of theelongate channel 606, and the primary flow rate of the solution may be varied to achieve desired filtering characteristics. In addition, an average height of the solution passing over themicro-structured surface 602 may also be varied to achieve the desired filtering characteristics. - In operation, a
primary flow 601 of the solution may pass through theentrance 608, through theelongate chamber 606 and emerge from theexit 610 asretentate 18. Meanwhile, the plurality ofopenings 604 may create a secondary flow of filtrate out from theelongate chamber 606. The nanowires in the solution may substantially align with theprimary flow 601 passing through theelongate chamber 606, and this alignment may inhibit or effectively prevent the nanowires from passing through the plurality ofopenings 604. - In one embodiment, a trough or another type of collection chamber (not shown) may be disposed beneath the
micro-structured surface 602 to collect the filtrate. In another embodiment, theelongate chamber 606 may be coupled to at least one collection chamber in an arrangement similar to that of thenanowire filter 300. -
FIG. 8 is a perspective view, andFIG. 9 is a front view of another examplemicro-structured nanowire filter 800. As illustrated, thenanowire filter 800 comprises aframe 802 defining a generally V-shaped trough between anentrance 804 and anexit 806 that may direct a primary flow (designated by the arrow 801) of the solution containing nanowires over amicro-structured surface 808 supported by theframe 802. Themicro-structured surface 808 may, in one embodiment, comprise a plurality of surface protrusions and pores. - In one embodiment, the
frame 802 may comprise a metallic plate bent into the desired V-shape. In other embodiments, theframe 802 may comprise other materials, such as plastics. Theframe 802 may also have other shapes for directing theprimary flow 801 of the solution. For example, theframe 802 may define a cylindrical or a U shape. - In one embodiment, the
micro-structured surface 808 may be defined by filter paper. The filter paper may be any type of filter paper configured to filter the solution containing nanowires. For example, the filter paper may have a porosity of greater than 5 μm because the expected filtrate may have a diameter up to approximately 5 μm. In another embodiment, the filter paper may have a porosity of greater than 10 μm. The porosity of the filter paper may be varied, as described above to achieve particular filtering characteristics. - In other embodiments, the
micro-structured surface 808 may be defined by a more permanent filtering substrate. For example, an inner surface of theframe 802 itself may have small protrusions defined thereon. - In operation, a
primary flow 801 of the solution may pass through theentrance 804, over themicro-structured surface 808 and emerge from theexit 806 asretentate 18. More compact contaminant particles, which may tend to have lower drag in a flowing solution, may be pulled by gravity towards themicro-structured surface 808, where they may be trapped by the micro-structures. Of course, more massive contaminant particles may sediment more quickly out of the solution, while smaller contaminant particles may sediment more slowly. The dimensions and arrangement of thenanowire filter 800 may be configured to filter different sizes of the contaminant particles as desired. Meanwhile, the nanowires in the solution may substantially align with theprimary flow 801, and this alignment may inhibit or effectively prevent the nanowires from being trapped by themicro-structured surface 808. - In one embodiment, a flow rate of the
primary flow 801 of the solution may be monitored and controlled to ensure that thenanowire filter 800 is, indeed, preferentially filtering out the more compact, low aspect ratio particles. If the flow rate is too high, even the low aspect ratio contaminant particles may emerge asretentate 18. However, if the flow rate is too low, high aspect ratio nanowires may settle out of the solution onto the bottom of thenanowire filter 800. - A schematic view of the microscopic filtering process is illustrated in
FIG. 10 . As shown, thenanowires 1002 may be generally aligned with theprimary flow 801 of the solution while low aspectratio contaminant particles 1006 are trapped by the micro-structures 1008. - As may be understood with reference to
FIG. 10 , thenanowire filter 800 may trap filtrate within the micro-structures 1008. As a result, it may be desirable to occasionally clean themicro-structured surface 808 to maintain the filtering efficiency of thenanowire filter 800. In one embodiment, theprimary flow 801 of the solution may be stopped, and a separate cleaning solution passed over themicro-structured surface 808 to eliminate the filtrate. In another embodiment, themicro-structured surface 808 may be occasionally replaced. For example, new filter paper may replace the old filter paper. Other methods of cleaning themicro-structured surface 808 may be used in other embodiments. - The
micro-structured surface 808 may be cleaned periodically, according to some time interval, or may be cleaned after a certain amount of solution has been filtered. In another embodiment, themicro-structured surface 808 may be cleaned when the performance of thenanowire filter 800 has degraded by a certain amount. -
FIG. 11 is a perspective view of another examplemicro-structured nanowire filter 1100, with interior portions of thenanowire filter 1100 illustrated in dashed lines.FIGS. 12 and 13 present radial and longitudinal cross-sections, respectively, of thenanowire filter 1100 to facilitate a greater understanding of its inner structure. As illustrated, thenanowire filter 1100 comprises arotatable tube 1102 having anentrance 1110 and anexit 1112 and defining a passage for a primary flow (designated by the arrow 1101) of the solution containing nanowires. Amicro-structured surface 1108 lines an inside of therotatable tube 1102. Therotatable tube 1102 may also have disposed therein a substantiallyhelical element 1104 and may be coupled to adrive member 1106 for rotating therotatable tube 1102 about a longitudinal axis. - The
rotatable tube 1102 may be formed from any metallic or non-metallic materials. The size and shape of therotatable tube 1102 may also be varied to achieve desired filtering characteristics. - In one embodiment, the
micro-structured surface 1108 lining therotatable tube 1102 may comprise filter paper. The filter paper may be any type of filter paper configured to filter the solution. For example, the filter paper may have a porosity of greater than 5 μm because the expected filtrate may have a diameter up to approximately 5 μm. In another embodiment, the filter paper may have a porosity of greater than 10 μm. The porosity of the filter paper may be varied, as described above. In another embodiment, themicro-structured surface 1108 may be defined by an inner surface of therotatable tube 1102 itself. For example, therotatable tube 1102 may include a plurality of openings (not shown) that comprise the micro-structures. - In one embodiment, the substantially
helical element 1104 may be arranged adjacent themicro-structured surface 1108 and may comprise a strip of fluid impermeable material wound around an interior of therotatable tube 1102. The substantiallyhelical element 1104 may be formed integrally with or may be separate from therotatable tube 1102. The substantiallyhelical element 1104 is illustrated as extending only a short way into the passage defined by therotatable tube 1102. However, in other embodiments, the substantiallyhelical element 1104 may extend much further. For example, in some embodiments, the substantiallyhelical element 1104 may have a height approximately equal to a radius of therotatable tube 1102. - The
drive member 1106 may comprise any appropriate combination of a motor and fittings adapted to turn therotatable tube 1102. In one embodiment, thedrive member 1106 may be configured to turn therotatable tube 1102 at a variable angular velocity. - In operation, in order to drive a
primary flow 1101 of the solution containing nanowires through theentrance 1110 and out theexit 1112 of therotatable tube 1102, thedrive member 1106 may turn therotatable tube 1102 in a counter-clockwise direction (from the vantage point ofFIG. 12 ). Theprimary flow 1101 of the solution may be maintained at a level lower than a height of the substantiallyhelical element 1104, such that the solution cannot pass over the barrier represented by the substantiallyhelical element 1104. As therotatable tube 1102 turns in a counter-clockwise direction, the solution may be driven through therotatable tube 1102 by the substantiallyhelical element 1104, and thus, a flow rate of the solution may be controlled by thedrive member 1106. - As described above with reference to
FIG. 10 , low aspect ratio contaminant particles, which may tend to have lower drag in a flowing solution, may be pulled by gravity towards themicro-structured surface 1108, where they may be trapped by micro-structures. Meanwhile, nanowires in the solution may substantially align with theprimary flow 1101, and this alignment may inhibit or effectively prevent the nanowires from being trapped by themicro-structured surface 1108. - It may be desirable to occasionally clean the
micro-structured surface 1108 to maintain the filtering efficiency of thenanowire filter 1100. In one embodiment, the primary flow of the solution may be stopped, and a separate cleaning solution passed over themicro-structured surface 1108 to eliminate the filtrate. Alternatively, themicro-structured surface 1108 may be occasionally replaced. For example, new filter paper may replace the old filter paper. Other methods of cleaning themicro-structured surface 1108 may be used in other embodiments. - The
micro-structured surface 1108 may be cleaned periodically, according to some time interval, or after a certain amount of solution has been filtered. In another embodiment, themicro-structured surface 1108 may be cleaned when the performance of thenanowire filter 1100 has degraded by a certain amount. -
FIG. 14 is a perspective view, andFIG. 15 is a top view of anothermicro-structured nanowire filter 1400. As illustrated, thenanowire filter 1400 may include anelongate channel 1402 having anentrance 1410 and anexit 1412 and defining a passage for a primary flow (designated by the arrow 1401) of the solution containing nanowires along along axis 1404. Theelongate channel 1402 may further include a micro-structured,bottom surface 1406 having a plurality of parallel ridges oriented at an angle to thelong axis 1404. - The
elongate channel 1402 may be integral with or may be formed separately from themicro-structured surface 1406. In one embodiment,walls elongate channel 1402 as well as themicro-structured surface 1406 may be formed from any of a variety of metallic or non-metallic materials. Although illustrated as generally U-shaped, theelongate channel 1402 may have any of a number of other shapes and configurations. In one embodiment, theelongate channel 1402 may be fully enclosed, forming a generally rectangular cross-sectional shape. - The micro-structures of the
bottom surface 1406 may comprise a plurality of parallel ridges (and corresponding valleys) that form a non-right angle with thelong axis 1404. In one embodiment, the ridges may at least partially define a plurality of fluid passages ending at a plurality ofsecondary openings 1408 from theelongate channel 1402. The plurality ofsecondary openings 1408 may, in one embodiment, allow filtrate to exit theelongate channel 1402. Of course, in other embodiments, the ridges may be configured differently. For example, they need not be parallel, and, in one embodiment, the ridges may be oriented at a right angle to thelong axis 1404. - The parallel ridges may also be separated by a distance greater than 5 μm because the expected filtrate may have a diameter up to approximately 5 μm. In another embodiment, the parallel ridges may be separated by a distance greater than 10 μm. A cross-section of the valleys formed by the ridges may be approximately square, such that the valleys are deeper than 5 μm or 10 μm in respective embodiments. The size and shape of the ridges, the size and shape of the
elongate channel 1402, and the primary flow rate of the solution may be varied to achieve desired filtering characteristics. - Turning to
FIG. 16 , an enlarged, schematic view of themicro-structured surface 1406 of thenanowire filter 1400 is illustrated in operation. As shown, aprimary flow 1401 of the solution may flow across themicro-structured surface 1406, and thereby across the plurality of parallel ridges. The parallel ridges may then create a plurality ofsecondary flows 1604, as filtrate from the solution is diverted by the parallel ridges through thesecondary openings 1408. Thesesecondary flows 1604 containing filtrate may or may not be collected in collection chambers (not shown). Since the filtrate may thus be diverted away from thenanowire filter 1400, thenanowire filter 1400 may remain relatively clear of the filtrate. Thus, there may be a reduced need to clean thenanowire filter 1400. - As discussed above, the plurality of parallel ridges may filter low aspect ratio contaminant particles from the nanowires due to the different drag characteristics of these particles in a fluid flow.
-
FIG. 17 is a perspective view, andFIG. 18 is a cross-section of ananowire filter 1700 having anarrow aperture 1708, which filter may be used in thenanowire filtering system 10 or thenanowire filtering system 22. Thenanowire filter 1700 may comprise afirst plate 1702 and asecond plate 1704 disposed adjacent thefirst plate 1702. The first andsecond plates passage 1706 extending through the filter, thepassage 1706 having anentrance 1710 and anexit 1712. In one embodiment, thepassage 1706 defines anaperture 1708 having a width W less than at least one dimension of a set of contaminant particles. - The
nanowire filter 1700 may be formed from a variety of different materials. In one embodiment, thenanowire filter 1700 may comprise a molded plastic. In another embodiment, thenanowire filter 1700 may be formed from stainless steel. In yet another embodiment, thenanowire filter 1700 may comprise stainless steel first andsecond plates nanowire filter 1700. - In one embodiment, the
first plate 1702 and thesecond plate 1704 are substantially parallel and define a separation distance between them of less than at least one dimension of a set of contaminant particles. Since the separation distance between the twoplates aperture 1708 may coincide with theentrance 1710 to thenanowire filter 1700. - The
aperture 1708 may have a width W selected to filter out the set of contaminant particles having at least one dimension greater than the width. For example, in one embodiment, theaperture 1708 may have a width W less than 2 μm, in order to filter out particles having a diameter greater than 2 μm. In another embodiment, theaperture 1708 may have a width W less than 1 μm, or less than 0.5 μm, in order to filter out contaminant particles having greater dimensions. As the width W of theaperture 1708 is decreased, the flow through thenanowire filter 1700 may also decrease, and thenanowire filter 1700 may filter out more contaminant particles. The width W of theaperture 1708 may be varied in different embodiments to filter out different sets of contaminant particles, while allowing nanowires to pass through thefilter 1700 unimpeded. - The length L of the
aperture 1708 may also be varied to pass more or less solution. In one embodiment, a verylong aperture 1708 may be used to enable a greater flow of solution through thepassage 1706 of thenanowire filter 1700. - In general, as with the micro-structured nanowire filters described above, nanowires in the solution may substantially align with the flow through the
passage 1706 of thenanowire filter 1700. Thus, as the nanowires approach theaperture 1708, they may present a relatively small cross-section. For example, in one embodiment, the nanowires may have an average diameter ranging from 20 to 200 nm. Although, the nanowires may be as long as, or longer than, the width W, the narrow cross-section of the nanowires may enable the nanowires to align with the flow and pass through thenanowire filter 1700. - A schematic view of the
nanowire filter 1700 in operation is illustrated inFIG. 19 . Thefirst plate 1702 is illustrated transparently, in order to schematically show thenanowires 1902 in the solution aligned with aflow 1906 through thenanowire filter 1700. Meanwhile, low aspect ratio contaminant particles 1904 (which may, for example, have a diameter approximately equal to a length of the nanowires) may be “captured” at theaperture 1708, unable to pass through thenanowire filter 1700 with the rest of theretentate 18. - Although the
nanowire filter 1700 is illustrated as comprising two substantially parallel plates forming anaperture 1708 sized to prevent large diameter contaminant particles from passing therethrough, other configurations are, of course, possible. In one embodiment, thenanowire filter 1700 may include any other aperture shape (e.g., circular, elliptical, triangular) having at least one width less than at least one dimension of a set of contaminant particles. In another embodiment, thenanowire filter 1700 may comprise a plurality of cylindrical passages, each of the passages having a diameter less than the at least one dimension of the set of contaminant particles. - As illustrated in
FIG. 19 , thenanowire filter 1700 may build up filtrate at theaperture 1708, which may eventually become clogged by these large contaminant particles. As a result, it may be desirable to “de-clog” thefilter 1700 by occasionally removing these particles from theaperture 1708 in order to maintain the filtering efficiency of thenanowire filter 1700. In one embodiment, the primary flow of the solution (designated by the arrow 1906) may be occasionally stopped and thenanowire filter 1700 removed for cleaning. In another embodiment, theprimary flow 1906 of the solution may be stopped, and a reverse flow (not shown) of a liquid generated through thepassage 1706 in order to dislodge the larger particles from theaperture 1708. Indeed, in one embodiment, a reverse flow of the solution itself may be periodically generated through thepassage 1706 in order to dislodge the larger particles from theaperture 1708. This reverse flow may also be coupled with an external cleaning, ultrasonic energy, or another mechanism to ensure that the filtered contaminant particles are well-separated from theaperture 1708 and do not immediately re-clog thenanowire filter 1700. Although the solution may flow through thenanowire filter 1700 in both directions, a net flow may be directed from theentrance 1710 to theexit 1712 of thenanowire filter 1700. - In one embodiment, the
nanowire filter 1700 may be de-clogged periodically, according to some time interval. In another embodiment, thenanowire filter 1700 may be de-clogged after a certain amount of solution has been filtered. In yet another embodiment, thenanowire filter 1700 may be de-clogged when the performance of the nanowire filter 1700 (as measured, for example, by a flow rate of theprimary flow 1906 through the nanowire filter 1700) has degraded by a certain amount. -
FIG. 20 is a perspective view, andFIG. 21 is a bottom view of anothernanowire filter 2000 having anarrow aperture 2008 defined at least in part by atop plate 2002 and abottom plate 2004. Thenanowire filter 2000 may be configured similarly to thenanowire filter 1700, except that thebottom plate 2004 may further include a plurality ofopenings 2010. As described above with reference to the other micro-structured nanowire filters, the plurality ofopenings 2010 may be considered micro-structures. In other embodiments, different micro-structures may be used in conjunction with a narrow aperture to form other nanowire filters. - In operation, the
nanowire filter 2000 may filter out larger contaminant particles at theaperture 2008 and may filter out smaller contaminant particles via theopenings 2010 in thebottom plate 2004. Thus, thenanowire filter 2000 may effectively combine the filtering capabilities of thenanowire filter 1700 with the filtering capabilities of, for example, thenanowire filter 600. The flow rate, solution composition and dimensions of the components of thenanowire filter 2000 may be varied to optimize one or both of these filtering capabilities. -
FIG. 22 is a perspective view of anothernanowire filter 2200 having anarrow aperture 2208.FIGS. 23 and 24 illustrate a cross-sectional view and a top view of thenanowire filter 2200, respectively. Thenanowire filter 2200 may comprise atop plate 2202 and abottom plate 2204 disposed adjacent thetop plate 2202. Thetop plate 2202 and thebottom plate 2204 may at least partially define apassage 2216 extending through thenanowire filter 2200. In one embodiment, thepassage 2216 defines at least oneaperture 2208 having a width less than at least one dimension of a set of contaminant particles. - The
top plate 2202 may further include anentrance 2212 therethrough. Theentrance 2212 may define an opening through which a primary flow (designated by the arrows 2201) of the solution may be directed. Aconduit 2214 for the solution may be coupled to theentrance 2212 in order to guide aprimary flow 2201 of the solution from thesource container 12 into thenanowire filter 2200. - The
nanowire filter 2200, like thenanowire filter 1700, may be formed from a variety of different materials. In one embodiment, thenanowire filter 2200 may comprise a molded plastic. In another embodiment, thenanowire filter 2200 may be formed from stainless steel. - In the illustrated embodiment, the
top plate 2202 and thebottom plate 2204 are substantially parallel and define a separation distance between them of less than at least one dimension of a set of contaminant particles. Theaperture 2208 having a width W may coincide with theentrance 2212 of thenanowire filter 2200 and may have a generally cylindrical shape, as illustrated by the dashed lines ofFIG. 23 . As described above, the size and configuration of theaperture 2208 and the position of theplates - In operation, as best illustrated in
FIG. 23 , the solution containing nanowires may flow outwards from theentrance 2212 between the twoplates FIG. 17 , nanowires in the solution may align with theprimary flow 2201 through thenanowire filter 2200, while large, low aspect ratio, contaminant particles may be prevented from passing radially outwards between the top andbottom plates nanowire filter 2200 may build up filtrate at theaperture 2208. As described above with reference toFIG. 17 , thenanowire filter 2200 may be occasionally de-clogged to maintain its filtering efficiency. -
FIG. 25 is a perspective view, andFIG. 26 is a side view of anothernanowire filter 2500 having anarrow aperture 2508. Thenanowire filter 2500 may comprise afirst plate 2502 and asecond plate 2504 disposed adjacent thefirst plate 2502. The first andsecond plates passage 2506 extending through thenanowire filter 2500 may narrow between anentrance 2510 and anexit 2512. In one embodiment, theaperture 2508 may be defined at theexit 2512 and may have a width less than at least one dimension of a set of contaminant particles. - The
nanowire filter 2500 may be configured and may function similarly to thenanowire filter 1700. In addition, the size and configuration of the components of thenanowire filter 2500 may be varied depending on the desired filtering characteristics. - In operation, as large contaminant particles travel along the
passage 2506 between theentrance 2510 and theexit 2512, each particle may be captured at that portion of thepassage 2506 having a width approximately equal to that particle's diameter. Thus, for example, if theentrance 2510 of thenanowire filter 2500 has a width of 10 μm and theexit 2512 has a width of 1 μm, then 5 μm particles may be captured somewhere near the middle of thepassage 2506, and 1.1 μm particles may be captured very close to theexit 2512. - As a result, unlike the
nanowire filter 1700, which may capture all filtered particles at theentrance 1710, thenanowire filter 2500 may filter out contaminant particles along its entire length. Thus, it may take longer for thenanowire filter 2500 to become clogged. -
FIG. 27 is a perspective view, andFIG. 28 is a side view of anothernanowire filter 2700 having anarrow aperture 2708. Thenanowire filter 2700 may comprise afirst plate 2702, asecond plate 2704 disposed adjacent thefirst plate 2702, and apassage 2706 defined between the twoplates passage 2706 may define at least oneaperture 2708 approximately halfway through having a width less than at least one dimension of a set of contaminant particles. - The
nanowire filter 2700 may have anaperture 2708 arranged substantially anywhere along thepassage 2706 defined between the twoplates plates nanowire filter 2700 may function generally similarly to thenanowire filter 2500 described above. -
FIG. 29 is a perspective view, andFIG. 30 is a side view of anothernanowire filter 2900 having a plurality ofnarrow apertures - In one embodiment, the
nanowire filter 2900 may comprise afirst plate 2902 and asecond plate 2904 disposed adjacent thefirst plate 2902. The twoplates entrance 2910 and anexit 2912, and may at least partially define anaperture 2908 having a width less than at least one dimension of a first set of contaminant particles (e.g., 2 μm). - The
nanowire filter 2900 may further comprise athird plate 2922 and afourth plate 2924 disposed adjacent thethird plate 2922. The twoplates second entrance 2926 and asecond exit 2927, and may at least partially define asecond aperture 2928 having a width less than at least one dimension of a second set of contaminant particles (e.g., 1 μm). As illustrated, the second set of contaminant particles may have at least one dimension smaller than the at least one dimension of the first set of contaminant particles. - Finally, the
nanowire filter 2900 may comprise afifth plate 2932 and asixth plate 2934 disposed adjacent thefifth plate 2932. The twoplates third entrance 2936 and athird exit 2937, and may at least partially define athird aperture 2938 having a width less than at least one dimension of a third set of contaminant particles (e.g., 0.5 μm). As illustrated, the third set of contaminant particles may have at least one dimension smaller than the at least one dimension of the second set of contaminant particles. - In other embodiments, more or fewer apertures of various sizes may be used to filter out particular sets of contaminant particles.
- In operation, the
nanowire filter 2900 may function generally similarly to thenanowire filter 2500 described above. For example, thenanowire filter 2900 may filter out contaminant particles having diameters larger than 2 μm at thefirst aperture 2908, other contaminant particles having diameters between 1 and 2 μm at thesecond aperture 2928 and still more contaminant particles having diameters between 0.5 and 1 μm at thethird aperture 2938. -
FIG. 31 illustrates a flow diagram for amethod 3100 of filtering a solution containing nanowires using a micro-structured nanowire filter, according to one embodiment. Thismethod 3100 will be discussed primarily in the context of thenanowire filter 300 incorporated into thenanowire filtering system 10. However, it may be understood that the acts disclosed herein may also be executed using a variety of other micro-structured nanowire filters (e.g., nanowire filters 600, 800, 1100, 1400, and 2000), in accordance with the described method. - The method begins at 3102, when a solution containing nanowires is provided. As discussed above, in one embodiment, the solution containing nanowires may comprise the solution within which the nanowires were formed. In other embodiments, the solution within which the nanowires were formed may have already undergone a variety of processing and/or filtering acts.
- The solution containing nanowires may comprise a polydisperse solution including a variety of particles and nano-structures in addition to the desired nanowires. A variety of different solutions may be filtered in different embodiments, including different percentages of nanowires, different solvents and additives, different shapes and types of low aspect ratio particles, etc. In one embodiment, based on these variable characteristics of the solution, the
nanowire filtering system 10 and, in particular, thenanowire filter 300 may be configured differently. - At 3104, a primary flow of the solution is generated. The primary flow of the solution may be generated by any of a variety of mechanisms. In one embodiment, a
pump 14, as illustrated inFIG. 1 , may be used to generate the primary flow of the solution. In another embodiment, the primary flow of the solution may be generated by gravity from thesource container 12. In yet another embodiment, a pressure differential (e.g., a source pressurized tank) may be used to generate the primary flow of the solution. A flow rate of this primary flow may also be varied in different embodiments, depending on the configuration of thenanowire filter 300, thesource container 12, apump 14, tubes and conduits connecting these components, a target filtration rate, etc. - At 3106, the solution is filtered by directing the primary flow over a micro-structured surface configured to filter the solution. The primary flow may be directed over the micro-structured surface in a variety of ways. In one embodiment, a plurality of tubes, connectors, valves and other fluid conduits may direct the primary flow towards, and subsequently over the micro-structured surface. In one embodiment, the primary flow may be directed over the micro-structured surface, at least in part, by structures (such as the interior walls of the elongate channel 302) within the
nanowire filter 300 itself. The flow rate of the primary flow may also be varied in order to control an average height of the solution above the micro-structured surface. - The micro-structured surface may comprise any of a variety of microstructures. As illustrated in
FIG. 3 , thenanowire filter 300 may include a plurality ofopenings 306. As illustrated inFIG. 8 , thenanowire filter 800 may include amicro-structured surface 808 having a plurality of microscopic protrusions and pores. As illustrated inFIG. 14 , thenanowire filter 1400 may comprise a plurality of parallel ridges. As described above, micro-structures may include any small structures formed in, on or through a surface that may interfere with a fluid flow. The micro-structures are preferably configured to filter the solution by removing undesirable contaminant particles. Examples of suitable configurations are described above in greater detail with reference to the exemplary micro-structured nanowire filters. - In one embodiment, after passing over the micro-structured surface, the
retentate 18 emerging from thenanowire filter 300 may comprise a more uniform solution of nanowires. Meanwhile, the filtrate from the solution may flow away from the micro-structured surface and thereby away from thenanowire filter 300. In other embodiment, the filtrate may be captured and held by the micro-structured surface (e.g., as illustrated inFIGS. 8-10 ). - In one embodiment, directing the primary flow over the micro-structured surface may further comprise creating a secondary flow through the plurality of
openings 306. As described in greater detail above, as the primary flow travels over the plurality ofopenings 306, at least a portion of that primary flow may be diverted as a secondary flow through the plurality ofopenings 306. In one embodiment, the secondary flow through the plurality ofopenings 306 may include both solvent and low aspect ratio contaminant particles. A flow rate of the primary flow may be selected to be at least 10 times greater than a flow rate of the secondary flow. In another embodiment, a flow rate of the primary flow may be at least 100 times greater than a flow rate of the secondary flow. By increasing the ratio of the primary flow rate to the secondary flow rate, it may become less likely that the nanowires (which may align with a flow of the solution due to their higher aspect ratios) will be diverted through the plurality ofopenings 306 with the filtrate. - In another embodiment, as illustrated in
FIGS. 14-16 , directing the primary flow over the micro-structured surface may further comprise creating a secondary flow directed away from the primary flow of the solution via a plurality of fluid passages defined by a plurality of parallel ridges. A flow rate of the primary flow may be selected to be at least 10 times greater than a flow rate of the secondary flow. In another embodiment, a flow rate of the primary flow may be at least 100 times greater than a flow rate of the secondary flow. - The primary flow of the solution may also be occasionally stopped, and a cleaning solution may be passed over the micro-structured surface. For example, when micro-structures are implemented that capture and hold filtrate, this act of passing the cleaning solution over the micro-structured surface may be desirable to mitigate or prevent the build-up of filtrate and any resulting degradation in filtering efficiency. In one embodiment, the primary flow may be stopped and the cleaning solution applied periodically, according to some time interval. In another embodiment, these acts may be performed after a certain amount of solution has been filtered. In yet another embodiment, these acts may be performed when the performance of the nanowire filter has degraded by a certain amount.
- In another embodiment, the
retentate 18 may be collected, liquid may be added, and theretentate 18 may be recirculated over the micro-structured surface. An exemplarynanowire filtering system 22 for performing such acts is illustrated inFIG. 2 . Theretentate 18 may be collected in a variety of ways. In one embodiment, a second pump (not illustrated) may generate a flow of the retentate 18 from thenanowire filter 16 back to thesource container 12, where it may be collected. At any stage in the recirculation of theretentate 18, replacement solvent may be added. In one embodiment, for example, an inlet (not shown) may combine additional solvent with theretentate 18 before theretentate 18 is collected at thesource container 12. In another embodiment, the additional solvent may be added directly to the source container 12 (e.g., at a rate generally corresponding to the loss of filtrate from the solution). - The
retentate 18 may be recirculated over the micro-structured surface a number of times. In one embodiment, for example, theretentate 18 may be recirculated a pre-determined number of times calibrated to approximately filter the solution to a desired purity. In another embodiment, a purity of the retentate 18 (corresponding, for example, to the percentage weight of nanowires in theretentate 18 or to a percentage concentration of replacement solvent) may be tested periodically or continuously, in order to determine whether or not to continue recirculating theretentate 18 over the micro-structured surface. Once a desired purity is reached, the recirculation of theretentate 18 may be stopped, and the solution collected in thesource container 12. -
FIG. 32 illustrates a flow diagram for analternative method 3200 of filtering a solution containing nanowires using a nanowire filter having a narrow aperture, according to one embodiment. Thismethod 3200 will be discussed in the context of thenanowire filter 1700 incorporated into thenanowire filtering system 10. However, it may be understood that the acts disclosed herein may also be executed using a variety of other nanowire filters having narrow apertures (e.g.,nanowire filters - The method begins at 3202, when a solution containing nanowires and a first set of contaminant particles is provided. As discussed above, in one embodiment, the solution containing nanowires may comprise the solution within which the nanowires were formed. In other embodiments, the solution within which the nanowires were formed may have already undergone a variety of processing and/or filtering acts.
- At 3204, a flow of the solution is generated. The flow of the solution may be generated by any of a variety of mechanisms, as described above with respect to act 3104.
- At 3206, the solution is filtered by directing the flow through a passage defining an aperture having a width less than at least one dimension of the first set of contaminant particles. The flow may be directed through the passage in any of a variety of ways. In one embodiment, a plurality of tubes, connectors, valves and other fluid conduits may direct the flow towards and through the passage.
- The passage and the aperture defined thereby may comprise any of a variety of shapes and configurations. In one embodiment, as illustrated in
FIG. 17 , a pair ofparallel plates - In one embodiment, as described in detail above, the
nanowire filter 1700 may eventually become clogged by filtrate collecting at theentrance 1710 to the passage. The flow of the solution may therefore occasionally be stopped, a reverse flow of a liquid generated, and the reverse flow directed through the passage in a direction opposite to the flow of the solution. In one embodiment, a cleaning solution (e.g., water) may be periodically passed through thenanowire filter 1700 from theexit 1712 to the entrance 1720 in order to keep thenanowire filter 1700 running efficiently. In another embodiment, a reverse flow of the solution itself may occasionally be generated. For example, thepump 14 may be configured to pump in both a forward and reverse direction and may periodically switch direction in order to drive the solution back and forth through thenanowire filter 1700. A flow rate of the forward flow of the solution, and a flow rate of the reverse flow may be chosen such that there is a net flow of the solution towards theexit 1712 of the passage (i.e., in the forward direction). Thus, potential clogging of thenanowire filter 1700, as described above, may be avoided or at least delayed by the periodic flushing of theentrance 1710. - The reverse flow may be generated periodically, according to some time interval, or may be generated after a certain amount of solution has been filtered. In another embodiment, the reverse flow may be generated when the performance of the
nanowire filter 1700 has degraded by a certain amount. For example, the reverse flow may be generated based on a reduction in a forward flow rate of the solution. - In another embodiment, the
nanowire filter 16 may further include a tortuous path filter (not illustrated) located upstream from theaperture 1708. The tortuous path filter may comprise any type of tortuous path filter. In one embodiment, for example, the tortuous path filter may be configured similarly to a beta pure depth filter, manufactured by 3M, with a nominal pore size of 125 μm. - The flow of the solution may be further directed to a second passage defining a second aperture having a width less than at least one dimension of a second set of contaminant particles (e.g., 1 μm), and may then be directed to a third passage defining a third aperture having a width less than at least one dimension of a third set of contaminant particles (e.g., 0.5 μm) (as illustrated in
FIG. 29 ). In one embodiment, the flow of the solution may be directed first through the first passage, then through the second passage, and then through the third passage. - Various embodiments described above can be combined to provide further embodiments. From the foregoing it will be appreciated that, although specific embodiments have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the teachings. Accordingly, the claims are not limited by the disclosed embodiments.
Claims (27)
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Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100078197A1 (en) * | 2008-09-30 | 2010-04-01 | Fujifilm Corporation | Metal nanowires, method for producing the same, and transparent conductor |
US20130039806A1 (en) * | 2011-08-12 | 2013-02-14 | Jeffrey Blinn | Nanowire purification methods, compositions, and articles |
US8454859B2 (en) | 2011-02-28 | 2013-06-04 | Nthdegree Technologies Worldwide Inc | Metallic nanofiber ink, substantially transparent conductor, and fabrication method |
US20140001418A1 (en) * | 2009-08-24 | 2014-01-02 | Cambrios Technologies Corporation | Purification of metal nanostructures for improved haze in transparent conductors made from the same |
WO2014004712A1 (en) * | 2012-06-28 | 2014-01-03 | Nthdegree Technologies Worldwide Inc. | Systems and methods for fabrication of nanostructures |
US8927855B2 (en) | 2011-06-14 | 2015-01-06 | Panasonic Intellectual Property Management Co., Ltd. | Solar cell and method for fabricating the same |
US9150746B1 (en) | 2014-07-31 | 2015-10-06 | C3Nano Inc. | Metal nanowire inks for the formation of transparent conductive films with fused networks |
US9645454B2 (en) | 2013-04-01 | 2017-05-09 | Kabushiki Kaisha Toshiba | Transparent conductive film and electric device |
US9802397B2 (en) | 2014-11-27 | 2017-10-31 | Panasonic Intellectual Property Management Co., Ltd. | Structural member for electronic devices |
US9920207B2 (en) | 2012-06-22 | 2018-03-20 | C3Nano Inc. | Metal nanostructured networks and transparent conductive material |
US10020807B2 (en) | 2013-02-26 | 2018-07-10 | C3Nano Inc. | Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks |
US10029916B2 (en) | 2012-06-22 | 2018-07-24 | C3Nano Inc. | Metal nanowire networks and transparent conductive material |
US10081020B2 (en) | 2015-06-12 | 2018-09-25 | Dow Global Technologies Llc | Hydrothermal method for manufacturing filtered silver nanowires |
US10376898B2 (en) | 2015-06-12 | 2019-08-13 | Dow Global Technologies Llc | Method for manufacturing high aspect ratio silver nanowires |
CN110201440A (en) * | 2019-05-23 | 2019-09-06 | 中色科技股份有限公司 | A kind of plate filter changes paper expansion shaft harmomegathus method |
US10564780B2 (en) | 2015-08-21 | 2020-02-18 | 3M Innovative Properties Company | Transparent conductors including metal traces and methods of making same |
US11274223B2 (en) | 2013-11-22 | 2022-03-15 | C3 Nano, Inc. | Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches |
US11343911B1 (en) | 2014-04-11 | 2022-05-24 | C3 Nano, Inc. | Formable transparent conductive films with metal nanowires |
US11515058B2 (en) | 2018-05-30 | 2022-11-29 | Hefei Boe Display Technology Co., Ltd. | Conductive film, production method thereof, and display apparatus |
US11866827B2 (en) | 2011-02-28 | 2024-01-09 | Nthdegree Technologies Worldwide Inc | Metallic nanofiber ink, substantially transparent conductor, and fabrication method |
Families Citing this family (242)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI428937B (en) | 2005-08-12 | 2014-03-01 | Cambrios Technologies Corp | Nanowires-based transparent conductors |
US8454721B2 (en) * | 2006-06-21 | 2013-06-04 | Cambrios Technologies Corporation | Methods of controlling nanostructure formations and shapes |
CN102324462B (en) | 2006-10-12 | 2015-07-01 | 凯博瑞奥斯技术公司 | Nanowire-based transparent conductors and applications thereof |
US8018568B2 (en) | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
WO2008150867A2 (en) | 2007-05-29 | 2008-12-11 | Innova Materials, Llc | Surfaces having particles and related methods |
KR20090023803A (en) * | 2007-09-03 | 2009-03-06 | 삼성전자주식회사 | Liquid crystal display panel and method of manufacturing the same |
JP5221088B2 (en) * | 2007-09-12 | 2013-06-26 | 株式会社クラレ | Transparent conductive film and method for producing the same |
SG188159A1 (en) * | 2008-02-26 | 2013-03-28 | Cambrios Technologies Corp | Methods and compositions for ink jet deposition of conductive features |
US20110281070A1 (en) * | 2008-08-21 | 2011-11-17 | Innova Dynamics, Inc. | Structures with surface-embedded additives and related manufacturing methods |
CA2734864A1 (en) | 2008-08-21 | 2010-02-25 | Innova Dynamics, Inc. | Enhanced surfaces, coatings, and related methods |
KR20100029633A (en) * | 2008-09-08 | 2010-03-17 | 삼성전자주식회사 | Display apparatus having an active transflective device |
JP5189449B2 (en) * | 2008-09-30 | 2013-04-24 | 富士フイルム株式会社 | Metal nanowire-containing composition and transparent conductor |
JP2010087105A (en) * | 2008-09-30 | 2010-04-15 | Fujifilm Corp | Solar battery |
KR20100045675A (en) | 2008-10-24 | 2010-05-04 | 삼성전자주식회사 | Display apparatus |
US20110180133A1 (en) * | 2008-10-24 | 2011-07-28 | Applied Materials, Inc. | Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires |
US20100101829A1 (en) * | 2008-10-24 | 2010-04-29 | Steven Verhaverbeke | Magnetic nanowires for tco replacement |
US20100101832A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Compound magnetic nanowires for tco replacement |
US20100101830A1 (en) * | 2008-10-24 | 2010-04-29 | Applied Materials, Inc. | Magnetic nanoparticles for tco replacement |
JP5429192B2 (en) | 2009-01-16 | 2014-02-26 | コニカミノルタ株式会社 | Pattern electrode manufacturing method and pattern electrode |
TW201115205A (en) * | 2009-03-18 | 2011-05-01 | Artificial Muscle Inc | Wafer level optical system |
JP5625256B2 (en) * | 2009-04-02 | 2014-11-19 | コニカミノルタ株式会社 | Transparent electrode, method for producing transparent electrode, and organic electroluminescence element |
JP5584991B2 (en) * | 2009-04-02 | 2014-09-10 | コニカミノルタ株式会社 | Transparent electrode, method for producing transparent electrode, and organic electroluminescence element |
KR20120102489A (en) | 2009-04-10 | 2012-09-18 | 스미또모 가가꾸 가부시키가이샤 | Metal complex and composition containing same |
WO2010117075A1 (en) * | 2009-04-10 | 2010-10-14 | 住友化学株式会社 | Metal complex and composition containing same |
KR101009442B1 (en) * | 2009-04-15 | 2011-01-19 | 한국과학기술연구원 | Method for fabrication of conductive film using conductive frame and conductive film |
GB0908300D0 (en) | 2009-05-14 | 2009-06-24 | Dupont Teijin Films Us Ltd | Polyester films |
CN101963681B (en) * | 2009-07-24 | 2012-06-20 | 清华大学 | Polarizing element |
US8512438B2 (en) * | 2009-08-25 | 2013-08-20 | Cambrios Technologies Corporation | Methods for controlling metal nanostructures morphology |
JP5391932B2 (en) * | 2009-08-31 | 2014-01-15 | コニカミノルタ株式会社 | Transparent electrode, method for producing transparent electrode, and organic electroluminescence element |
TWI420540B (en) | 2009-09-14 | 2013-12-21 | Ind Tech Res Inst | Conductive material formed using light or thermal energy and method for manufacturing the same, and nano-scale composition |
KR101587124B1 (en) * | 2009-09-23 | 2016-01-21 | 삼성디스플레이 주식회사 | Liquid crystal display including the same |
KR101632315B1 (en) * | 2009-10-22 | 2016-06-21 | 삼성전자주식회사 | Active lens and stereoscopic image display apparatus employing the same |
US8917377B2 (en) | 2009-10-22 | 2014-12-23 | Samsung Electronics Co., Ltd. | Active lenses, stereoscopic image display apparatuses including active lenses and methods of operating the same |
KR101611422B1 (en) * | 2009-11-17 | 2016-04-12 | 삼성전자주식회사 | Composite structure of graphene and nanostructure and method of manufacturing the same |
WO2011065213A1 (en) * | 2009-11-27 | 2011-06-03 | コニカミノルタホールディングス株式会社 | Dispersion, transparent electrode, and organic electro- luminescent element |
CN102834923B (en) * | 2009-12-04 | 2017-05-10 | 凯姆控股有限公司 | Nanostructure-based transparent conductors having increased haze and devices comprising the same |
CN105219154B (en) | 2010-01-15 | 2019-03-08 | 英属维尔京群岛商天材创新材料科技股份有限公司 | Low haze transparent conductor |
KR20120120358A (en) * | 2010-01-25 | 2012-11-01 | 더 보드 어브 트러스티스 어브 더 리랜드 스탠포드 주니어 유니버시티 | Joined nanostructures and methods therefor |
CN102781816A (en) * | 2010-01-25 | 2012-11-14 | 小利兰·斯坦福大学托管委员会 | Fullerene-doped nanostructures and methods therefor |
SG10201500798UA (en) * | 2010-02-05 | 2015-03-30 | Cambrios Technologies Corp | Photosensitive ink compositions and transparent conductors and method of using the same |
US8518472B2 (en) * | 2010-03-04 | 2013-08-27 | Guardian Industries Corp. | Large-area transparent conductive coatings including doped carbon nanotubes and nanowire composites, and methods of making the same |
JP5718449B2 (en) | 2010-03-23 | 2015-05-13 | カンブリオス テクノロジーズ コーポレイション | Etching pattern formation of transparent conductor with metal nanowires |
EP2580647A1 (en) | 2010-06-11 | 2013-04-17 | 3M Innovative Properties Company | Positional touch sensor with force measurement |
TWI416544B (en) * | 2010-06-23 | 2013-11-21 | Nat Univ Tsing Hua | Composite electrode and mathod for fabricating the same, electrode of a silicon solar cell and silicon solar cell thereof |
US10306758B2 (en) * | 2010-07-16 | 2019-05-28 | Atmel Corporation | Enhanced conductors |
FR2962852A1 (en) * | 2010-07-19 | 2012-01-20 | Saint Gobain | TRANSPARENT ELECTRODE FOR HIGH-PERFORMANCE PHOTOVOLTAIC CELL |
KR101119269B1 (en) * | 2010-07-26 | 2012-03-16 | 삼성전기주식회사 | Transparent conductive film for touch panel and manufacturing method the same |
KR101489161B1 (en) * | 2010-07-30 | 2015-02-06 | 주식회사 잉크테크 | Method for manufacturing transparent conductive layer and transparent conductive layer manufactured by the method |
EP2598942A4 (en) | 2010-07-30 | 2014-07-23 | Univ Leland Stanford Junior | Conductive films |
KR101658154B1 (en) * | 2010-07-30 | 2016-10-04 | 엘지디스플레이 주식회사 | PHOTOELECTRIC ELEMENT and MANUFACTURING METHOD OF THE SAME |
CN103155174B (en) | 2010-08-07 | 2017-06-23 | 宸鸿科技控股有限公司 | The device assembly of the additive with surface insertion and the manufacture method of correlation |
US20120061625A1 (en) * | 2010-09-09 | 2012-03-15 | Eckert Karissa L | Transparent conductive films, compositions, articles, and methods |
US9112058B2 (en) | 2010-09-10 | 2015-08-18 | The Board Of Trustees Of The Leland Stanford Junior University | Interface apparatus and methods |
CN103109391B (en) * | 2010-09-24 | 2016-07-20 | 加利福尼亚大学董事会 | Nanowire-polymer composite electrode |
JP5664119B2 (en) * | 2010-10-25 | 2015-02-04 | ソニー株式会社 | Transparent conductive film, method for manufacturing transparent conductive film, photoelectric conversion device, and electronic device |
KR20120044545A (en) * | 2010-10-28 | 2012-05-08 | 삼성엘이디 주식회사 | Semiconductor light emitting device |
US20120111614A1 (en) * | 2010-11-10 | 2012-05-10 | Free James J | Integrated composite structure and electrical circuit utilizing carbon fiber as structural materials and as electric conductor |
GB201019212D0 (en) | 2010-11-12 | 2010-12-29 | Dupont Teijin Films Us Ltd | Polyester film |
MX2013006344A (en) * | 2010-12-07 | 2014-03-12 | Rhodia Operations | Electrically conductive nanostructures, method for making such nanostructures, electrically conductive polymer films containing such nanostructures, and electronic devices containing such films. |
EP2465966A1 (en) * | 2010-12-15 | 2012-06-20 | Innovation & Infinity Global Corp. | Transparent conductive structure and method of making the same |
US20140021400A1 (en) | 2010-12-15 | 2014-01-23 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
US8763525B2 (en) * | 2010-12-15 | 2014-07-01 | Carestream Health, Inc. | Gravure printing of transparent conductive films containing networks of metal nanoparticles |
CN103517958A (en) * | 2010-12-15 | 2014-01-15 | 康达利恩股份公司 | Method for forming uv-curable conductive compositions and a domposition thus formed |
CN102569432B (en) * | 2010-12-17 | 2014-12-10 | 国家纳米科学中心 | Transparent electrode material and preparation method thereof |
KR20120071149A (en) * | 2010-12-22 | 2012-07-02 | 엘지전자 주식회사 | Thin film solar cell module and manufacturing method thereof |
US20120273455A1 (en) * | 2011-04-29 | 2012-11-01 | Clean Energy Labs, Llc | Methods for aligned transfer of thin membranes to substrates |
US9575598B2 (en) | 2010-12-27 | 2017-02-21 | Tsinghua University | Inputting fingertip sleeve |
JP2012146430A (en) * | 2011-01-11 | 2012-08-02 | Innovation & Infinity Global Corp | Transparent conductive structure utilizing mixed nanoparticle and method for producing the same |
KR101795419B1 (en) * | 2011-01-26 | 2017-11-13 | 주식회사 잉크테크 | Method for manufacturing transparent conductive layer and transparent conductive layer manufactured by the method |
US20120196053A1 (en) * | 2011-01-28 | 2012-08-02 | Coull Richard | Methods for creating an electrically conductive transparent structure |
WO2012112818A2 (en) * | 2011-02-16 | 2012-08-23 | The Regents Of The University Of California | Interpenetrating networks of crystalline carbon and nano-scale electroactive materials |
JP4893867B1 (en) | 2011-02-23 | 2012-03-07 | ソニー株式会社 | Transparent conductive film, dispersion, information input device, and electronic device |
CN103460426A (en) * | 2011-03-29 | 2013-12-18 | 住友化学株式会社 | Process for producing organic photoelectric conversion element |
WO2012137923A1 (en) * | 2011-04-07 | 2012-10-11 | 日本写真印刷株式会社 | Transfer sheet provided with transparent conductive film mainly composed of graphene, method for manufacturing same, and transparent conductor |
KR101927562B1 (en) | 2011-04-15 | 2018-12-10 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Transparent electrode for electronic displays |
CN102208547B (en) * | 2011-04-18 | 2013-11-20 | 电子科技大学 | Substrate for flexible photoelectronic device and preparation method thereof |
CN102201549B (en) * | 2011-04-18 | 2013-08-14 | 电子科技大学 | Substrate for flexible light emitting device and fabrication method thereof |
CN102195006A (en) * | 2011-04-26 | 2011-09-21 | 福州大学 | Flexible electrode based on AZO/graphene/AZO structure and preparation method thereof |
US8974900B2 (en) * | 2011-05-23 | 2015-03-10 | Carestream Health, Inc. | Transparent conductive film with hardcoat layer |
US9175183B2 (en) * | 2011-05-23 | 2015-11-03 | Carestream Health, Inc. | Transparent conductive films, methods, and articles |
TWI427644B (en) * | 2011-06-13 | 2014-02-21 | Univ Nat Yunlin Sci & Tech | Method for making transparent conductive film |
AU2012275284B2 (en) * | 2011-06-28 | 2015-06-11 | Innova Dynamics, Inc. | Transparent conductors incorporating additives and related manufacturing methods |
US9573163B2 (en) * | 2011-07-01 | 2017-02-21 | Cam Holding Corporation | Anisotropy reduction in coating of conductive films |
KR101327069B1 (en) * | 2011-07-28 | 2013-11-07 | 엘지이노텍 주식회사 | Electrode structure and method for producing electrode |
JP5813875B2 (en) | 2011-08-24 | 2015-11-17 | イノバ ダイナミックス, インコーポレイテッド | Patterned transparent conductor and related manufacturing method |
CN103858242B (en) * | 2011-08-26 | 2016-08-17 | 加州大学校务委员会 | The transparent conductive oxide electrochromic device of nanostructured |
KR20130030903A (en) * | 2011-09-20 | 2013-03-28 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
JP5646424B2 (en) * | 2011-09-27 | 2014-12-24 | 株式会社東芝 | Transparent electrode laminate |
JP5583097B2 (en) * | 2011-09-27 | 2014-09-03 | 株式会社東芝 | Transparent electrode laminate |
KR101331112B1 (en) * | 2011-09-28 | 2013-11-19 | (주)바이오니아 | Nanocomposites consisting of carbon nanotube and metal oxide and a process for preparing the same |
EP3550629A3 (en) | 2011-10-13 | 2019-12-25 | Cambrios Film Solutions Corporation | Opto-electrical devices incorporating metal nanowires |
US9560754B2 (en) | 2011-10-13 | 2017-01-31 | The Johns Hopkins University | Solution processed nanoparticle-nanowire composite film as a transparent conductor for opto-electronic devices |
RU2614515C2 (en) * | 2011-12-05 | 2017-03-28 | Филипс Лайтинг Холдинг Б.В. | Lighting system |
CN104040641A (en) * | 2011-12-07 | 2014-09-10 | 杜克大学 | Synthesis of cupronickel nanowires and their application in transparent conducting films |
KR20130070729A (en) * | 2011-12-20 | 2013-06-28 | 제일모직주식회사 | Transparent conductive films including metal nanowires and carbon nanotubes |
KR20140109965A (en) | 2011-12-21 | 2014-09-16 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Laser patterning of silver nanowire-based transparent electrically conducting coatings |
US9668333B2 (en) | 2011-12-22 | 2017-05-30 | 3M Innovative Properties Company | Electrically conductive article with high optical transmission |
US10041748B2 (en) | 2011-12-22 | 2018-08-07 | 3M Innovative Properties Company | Carbon coated articles and methods for making the same |
CN103213350B (en) * | 2012-01-18 | 2015-07-08 | 国家纳米科学中心 | Transparent conductive film and preparation method thereof |
US9917255B2 (en) * | 2012-02-03 | 2018-03-13 | Northwestern University | Methods of making composite of graphene oxide and nanostructures |
US9524806B2 (en) * | 2012-02-07 | 2016-12-20 | Purdue Research Foundation | Hybrid transparent conducting materials |
GB201203511D0 (en) * | 2012-02-29 | 2012-04-11 | Ibm | Position sensing apparatus |
KR101324281B1 (en) * | 2012-03-15 | 2013-11-01 | 인하대학교 산학협력단 | Transparent conductive films by graphene oxide/silver nanowire having high flexibilities |
DE102012102319A1 (en) | 2012-03-20 | 2013-09-26 | Rent A Scientist Gmbh | Nonlinear nano-wire useful e.g. for producing transparent electrodes e.g. in the fields of display, touch screen and in the field of printed electronics, comprises two linear portions and curved portion arranged between the linear portions |
US9490048B2 (en) | 2012-03-29 | 2016-11-08 | Cam Holding Corporation | Electrical contacts in layered structures |
JP5836866B2 (en) | 2012-03-30 | 2015-12-24 | 株式会社東芝 | Carbon electrode, method for producing the same, and photoelectric conversion element using the same |
JP2013211212A (en) * | 2012-03-30 | 2013-10-10 | Toshiba Corp | Laminated electrode, manufacturing method therefor and photoelectric conversion element |
US10483104B2 (en) | 2012-03-30 | 2019-11-19 | Kabushiki Kaisha Toshiba | Method for producing stacked electrode and method for producing photoelectric conversion device |
TW201342102A (en) * | 2012-04-06 | 2013-10-16 | Cambrios Technologies Corp | System and methods of reducing diffuse reflection of an optical stack |
FR2989485B1 (en) * | 2012-04-11 | 2016-02-05 | Commissariat Energie Atomique | TOUCH SENSOR AND METHOD FOR MANUFACTURING SUCH SENSOR |
CN102616033A (en) * | 2012-04-13 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for quickly manufacturing high-light-transmission conductive patterns |
KR101570398B1 (en) | 2012-04-26 | 2015-11-19 | 오사카 유니버시티 | Transparent conductive ink, and method for producing transparent conductive pattern |
KR101388682B1 (en) * | 2012-04-30 | 2014-04-24 | 한국교통대학교산학협력단 | HYBRID ELECTRODE USING Ag NANOWIRE AND GRAPHENE AND MANUFACTURING METHOD OF THE SAME |
TWI450821B (en) * | 2012-05-03 | 2014-09-01 | Taiwan Textile Res Inst | Transparent electrode with flexibility and method for manufacturing the same |
US20130309613A1 (en) * | 2012-05-16 | 2013-11-21 | Corning Incorporated | Liquid Based Films |
US9086523B2 (en) * | 2012-05-29 | 2015-07-21 | The Boeing Company | Nanotube signal transmission system |
US20130319729A1 (en) * | 2012-06-01 | 2013-12-05 | Nuovo Film Inc. | Low Haze Transparent Conductive Electrodes and Method of Making the Same |
US20140014171A1 (en) | 2012-06-15 | 2014-01-16 | Purdue Research Foundation | High optical transparent two-dimensional electronic conducting system and process for generating same |
WO2014015284A1 (en) | 2012-07-20 | 2014-01-23 | The Regents Of The University Of California | High efficiency organic light emitting devices |
KR101431705B1 (en) * | 2012-08-29 | 2014-08-20 | (주)탑나노시스 | Nanowire-carbon nano tube hybrid film and method for manufacturing the same |
US20140060726A1 (en) * | 2012-09-05 | 2014-03-06 | Bluestone Global Tech Limited | Methods for transferring graphene films and the like between substrates |
CN104797363B (en) | 2012-09-27 | 2018-09-07 | 罗地亚经营管理公司 | It manufactures silver nanostructured method and can be used for the copolymer of the method |
KR20140046923A (en) | 2012-10-11 | 2014-04-21 | 제일모직주식회사 | Transparent conductor, composition for manufacturing the same and optical display apparatus comprising the same |
KR101991964B1 (en) * | 2012-11-07 | 2019-06-21 | 삼성에스디아이 주식회사 | Method for Preparing Nanowire having Core-Shell Structure |
KR20140058895A (en) * | 2012-11-07 | 2014-05-15 | 삼성정밀화학 주식회사 | Laminated electrodes including conducting polymers and method of the same |
WO2014073597A1 (en) * | 2012-11-08 | 2014-05-15 | アルプス電気株式会社 | Conductor and method for producing same |
KR101486636B1 (en) * | 2012-12-06 | 2015-01-29 | 세종대학교산학협력단 | Light transmittance composite film and method for fabricating the same |
EP2929544A4 (en) * | 2012-12-07 | 2016-07-06 | 3M Innovative Properties Co | Electrically conductive articles |
CN103151394A (en) * | 2012-12-14 | 2013-06-12 | 广东志成冠军集团有限公司 | Thin-film solar cell and manufacture method thereof |
CN103078036B (en) * | 2013-01-17 | 2015-11-18 | 北京工业大学 | Based on the preparation method of the transparency electrode of graphene film |
KR101364531B1 (en) * | 2013-01-21 | 2014-02-19 | 덕산하이메탈(주) | Transparent electrode having nano material layer and method of manufacturing the same |
TW201435924A (en) * | 2013-01-22 | 2014-09-16 | Cambrios Technologies Corp | Nanostructure transparent conductors having high thermal stability for ESD protection |
CN105283927B (en) * | 2013-02-20 | 2018-02-13 | 国立大学法人东京工业大学 | The conductive board of conductive nanometer gauze network and the use network and transparency electrode and preparation method thereof |
DE102013002855A1 (en) | 2013-02-20 | 2014-08-21 | Heraeus Precious Metals Gmbh & Co. Kg | Formulations of washed silver wires and PEDOT |
US10468152B2 (en) * | 2013-02-21 | 2019-11-05 | Global Graphene Group, Inc. | Highly conducting and transparent film and process for producing same |
US9530531B2 (en) * | 2013-02-21 | 2016-12-27 | Nanotek Instruments, Inc. | Process for producing highly conducting and transparent films from graphene oxide-metal nanowire hybrid materials |
JP2014165094A (en) * | 2013-02-27 | 2014-09-08 | Nippon Zeon Co Ltd | Conductive film, touch panel, electrode for solar cell, and solar cell |
US20140262443A1 (en) * | 2013-03-14 | 2014-09-18 | Cambrios Technologies Corporation | Hybrid patterned nanostructure transparent conductors |
US20140272199A1 (en) * | 2013-03-14 | 2014-09-18 | Yi-Jun Lin | Ultrasonic spray coating of conducting and transparent films from combined graphene and conductive nano filaments |
US8871296B2 (en) * | 2013-03-14 | 2014-10-28 | Nanotek Instruments, Inc. | Method for producing conducting and transparent films from combined graphene and conductive nano filaments |
WO2014150577A1 (en) | 2013-03-15 | 2014-09-25 | Sinovia Technologies | Photoactive transparent conductive films, method of making them and touch sensitive device comprising said films |
JP5450863B2 (en) * | 2013-03-27 | 2014-03-26 | 富士フイルム株式会社 | Dispersion for forming conductive layer and transparent conductor |
US9368248B2 (en) | 2013-04-05 | 2016-06-14 | Nuovo Film, Inc. | Transparent conductive electrodes comprising metal nanowires, their structure design, and method of making such structures |
US9477128B2 (en) * | 2013-04-19 | 2016-10-25 | Board Of Regents, The University Of Texas System | Graphene/metal nanowire hybrid transparent conductive films |
CN104168009B (en) * | 2013-05-17 | 2018-03-23 | 光宝电子(广州)有限公司 | Light emitting-type touch switch device and light emitting-type touch switch module |
CN103242630B (en) * | 2013-05-20 | 2015-05-06 | 嘉兴学院 | PET (polyethylene terephthalate)-based electromagnetic shielding composite and preparation method thereof |
WO2015005204A1 (en) * | 2013-07-08 | 2015-01-15 | 東洋紡株式会社 | Electrically conductive paste |
TW201502653A (en) * | 2013-07-10 | 2015-01-16 | Hon Hai Prec Ind Co Ltd | Liquid crystal display device |
KR20150019820A (en) * | 2013-08-16 | 2015-02-25 | 일진엘이디(주) | Nitride semiconductor light emitting device using nanowires |
CN103426991A (en) * | 2013-08-23 | 2013-12-04 | 厦门大学 | Coining method for metal nanowire transparent ohmic electrode |
JP6308737B2 (en) | 2013-08-26 | 2018-04-11 | デクセリアルズ株式会社 | Metal nanowire, dispersion, transparent conductive film, information input device, and electronic device |
KR101524069B1 (en) * | 2013-09-16 | 2015-06-10 | 덕산하이메탈(주) | Stacking type transparent electrode having nano material layer |
US9663400B2 (en) * | 2013-11-08 | 2017-05-30 | Corning Incorporated | Scratch-resistant liquid based coatings for glass |
KR102065110B1 (en) | 2013-11-12 | 2020-02-11 | 삼성전자주식회사 | Flexible graphene switching devece |
US9674947B2 (en) * | 2013-12-04 | 2017-06-06 | Samsung Sdi Co., Ltd. | Transparent conductor, method for preparing the same, and optical display including the same |
KR101514325B1 (en) * | 2013-12-10 | 2015-04-22 | 국립대학법인 울산과학기술대학교 산학협력단 | Method of manufacturing a transparent electrode using electro spinning method |
KR102162426B1 (en) * | 2013-12-11 | 2020-10-07 | 삼성디스플레이 주식회사 | Touch panel and manufacturing method thereof |
WO2015090395A1 (en) * | 2013-12-19 | 2015-06-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transparent nanowire electrode with functional organic layer |
CN110058471A (en) * | 2013-12-24 | 2019-07-26 | 唯景公司 | Cover the busbar in electrochomeric glass structure |
US10884311B2 (en) | 2013-12-24 | 2021-01-05 | View, Inc. | Obscuring bus bars in electrochromic glass structures |
US11906868B2 (en) | 2013-12-24 | 2024-02-20 | View, Inc. | Obscuring bus bars in electrochromic glass structures |
JP6327870B2 (en) | 2014-01-29 | 2018-05-23 | デクセリアルズ株式会社 | Metal nanowire, transparent conductive film and manufacturing method thereof, dispersion, information input device, and electronic device |
JP6586665B2 (en) * | 2014-01-31 | 2019-10-09 | 日本ゼオン株式会社 | Transparent conductive film, dye-sensitized solar cell photoelectrode and touch panel, and dye-sensitized solar cell |
KR102158541B1 (en) * | 2014-01-31 | 2020-09-23 | 캄브리오스 필름 솔루션스 코포레이션 | Tandem organic photovoltaic devices that include a metallic nanostructure recombination layer |
JP6441576B2 (en) | 2014-02-03 | 2018-12-19 | デクセリアルズ株式会社 | Transparent conductive film, method for manufacturing the same, information input device, and electronic device |
KR101586902B1 (en) | 2014-04-09 | 2016-01-19 | 인트리 주식회사 | Light transmitting conductor comprising pattern of nanostructure and method of manufacturing the same |
GB2526311B (en) * | 2014-05-20 | 2019-06-19 | M Solv Ltd | Manufacturing a conductive nanowire layer |
CN104009141B (en) * | 2014-05-24 | 2017-10-13 | 北京工业大学 | CNT nano silver wire recombination current extension layer light emitting diode and preparation method thereof |
CN104020887A (en) * | 2014-05-30 | 2014-09-03 | 南昌欧菲光科技有限公司 | Touch screen |
JP2016027464A (en) * | 2014-05-30 | 2016-02-18 | 株式会社半導体エネルギー研究所 | Input device and information processing device |
TWI486969B (en) * | 2014-06-11 | 2015-06-01 | Nat Univ Tsing Hua | A method for fabricating hybrid conductive materials and a conductive thin film made thereof |
KR101536526B1 (en) * | 2014-06-17 | 2015-07-15 | 한양대학교 산학협력단 | Substrate comprising micro/nano structure and method of fabricating the same |
US9801287B2 (en) | 2014-07-09 | 2017-10-24 | Cam Holding Corporation | Electrical contacts in layered structures |
EP2977993A1 (en) | 2014-07-25 | 2016-01-27 | Heraeus Deutschland GmbH & Co. KG | Formulations comprising metal nanowires and pedot |
WO2016019422A1 (en) * | 2014-08-07 | 2016-02-11 | Flinders Partners Pty Ltd | Transparent electrode materials and methods for forming same |
US9927667B2 (en) | 2014-08-11 | 2018-03-27 | Sci Engineered Materials, Inc. | Display having a transparent conductive oxide layer comprising metal doped zinc oxide applied by sputtering |
US11111396B2 (en) * | 2014-10-17 | 2021-09-07 | C3 Nano, Inc. | Transparent films with control of light hue using nanoscale colorants |
CN104505149A (en) * | 2014-11-19 | 2015-04-08 | 东北师范大学 | Laminated transparent electrode and preparation method thereof |
CN105304209B (en) * | 2014-11-27 | 2017-02-22 | 中国科学院金属研究所 | Method of manufacturing transparent conductive film on color filter |
CN104393194A (en) * | 2014-12-10 | 2015-03-04 | 京东方科技集团股份有限公司 | Flexible electrode, fabrication method of flexible electrode, electronic skin and flexible display device |
WO2016096895A1 (en) * | 2014-12-16 | 2016-06-23 | Solvay Sa | Transparent conductor comprising metal nanowires, and method for forming the same |
CN104503162A (en) * | 2014-12-24 | 2015-04-08 | 深圳市华星光电技术有限公司 | Touch display panel, manufacturing method of touch display panel and combined electrode |
KR20160084715A (en) * | 2015-01-06 | 2016-07-14 | 연세대학교 산학협력단 | Transparent electrode and manufacturing method thereof |
TWI684999B (en) * | 2015-01-14 | 2020-02-11 | 日商東洋紡股份有限公司 | Conductive film |
CN104681645B (en) * | 2015-01-23 | 2016-09-21 | 华南师范大学 | A kind of method preparing composite transparent conductive electrode based on metal grill and metal nanometer line |
KR102320382B1 (en) | 2015-01-28 | 2021-11-02 | 삼성디스플레이 주식회사 | Electronic device |
KR102347960B1 (en) * | 2015-02-03 | 2022-01-05 | 삼성전자주식회사 | Conductor and method of manufacturing the same |
TWI564071B (en) * | 2015-02-09 | 2017-01-01 | 國立中山大學 | A method of photochemically mounting a material particle on a surface of a graphene-semiconductor substrate and a semiconductor structure |
KR101881195B1 (en) * | 2015-04-01 | 2018-07-23 | 성균관대학교산학협력단 | Strain sensor using nanocomposite and method for manufacturing thereof |
KR101676760B1 (en) * | 2015-04-09 | 2016-11-16 | 울산과학기술원 | Electro-spinning apparatus using electric field and method of manufacturing a transparent electrode using the same |
KR101701603B1 (en) * | 2015-04-09 | 2017-02-02 | 희성전자 주식회사 | Electro-spinning apparatus and method of manufacturing a transparent electrode using the same |
KR101701601B1 (en) * | 2015-04-09 | 2017-02-02 | 희성전자 주식회사 | Electro-spinning apparatus using magnetic field and method of manufacturing a transparent electrode using the same |
KR101689740B1 (en) * | 2015-04-09 | 2016-12-26 | 울산과학기술원 | Electro-spinning apparatus using drum collector and method of manufacturing a transparent electrode using the same |
KR102335116B1 (en) * | 2015-04-13 | 2021-12-03 | 삼성디스플레이 주식회사 | Touch screen pannel and manufacturing method thereof |
KR20170139564A (en) * | 2015-04-21 | 2017-12-19 | 채슴 테크놀러지, 인코포레이티드 | Transparent conductive film |
US11450446B2 (en) | 2015-05-05 | 2022-09-20 | Nano-C, Inc. | Carbon nanotube based hybrid films for mechanical reinforcement of multilayered, transparent-conductive, laminar stacks |
CN105118836B (en) * | 2015-07-29 | 2019-04-05 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof with conductive flatness layer |
KR20170018718A (en) * | 2015-08-10 | 2017-02-20 | 삼성전자주식회사 | Transparent electrode using amorphous alloy and method for manufacturing the same |
CN105093638A (en) * | 2015-09-02 | 2015-11-25 | 深圳市华科创智技术有限公司 | Method for preparing PDLC intelligent film and PDLC intelligent film |
EP3159897A1 (en) | 2015-10-20 | 2017-04-26 | Solvay SA | Composition for forming transparent conductor and transparentconductor made therefrom |
CN106611627A (en) * | 2015-10-23 | 2017-05-03 | 苏州汉纳材料科技有限公司 | High-quality carbon nanotube transparent conductive film, preparation method thereof and applications |
CN105810305B (en) * | 2015-10-23 | 2017-11-24 | 苏州汉纳材料科技有限公司 | Flexible CNTs/ metal nanometer lines composite transparent conductive film, its preparation method and application |
KR102581899B1 (en) * | 2015-11-04 | 2023-09-21 | 삼성전자주식회사 | Transparent electrodes and electronic devices including the same |
US10147512B2 (en) | 2015-12-09 | 2018-12-04 | C3Nano Inc. | Methods for synthesizing silver nanoplates and noble metal coated silver nanoplates and their use in transparent films for control of light hue |
US9857930B2 (en) | 2015-12-16 | 2018-01-02 | 3M Innovative Properties Company | Transparent conductive component with interconnect circuit tab comprising cured organic polymeric material |
CN105575477B (en) * | 2016-01-27 | 2017-11-28 | 深圳先进技术研究院 | A kind of method for improving nano silver wire flexible transparent conducting film electric conductivity |
ES2632247B1 (en) * | 2016-03-11 | 2020-06-03 | Garcia Guerrero Jorge | Smart fiber optic cable and carbon nanotube fibers |
KR102277621B1 (en) * | 2016-03-14 | 2021-07-15 | 유니티카 가부시끼가이샤 | Nanowires and manufacturing method thereof, nanowire dispersion, and transparent conductive film |
KR102004025B1 (en) * | 2016-03-15 | 2019-07-25 | 삼성에스디아이 주식회사 | Transparent conductor and display apparatus comprising the same |
CN107293591B (en) * | 2016-04-11 | 2020-03-31 | 华邦电子股份有限公司 | Printed circuit, thin film transistor and manufacturing method thereof |
US20180004318A1 (en) * | 2016-07-01 | 2018-01-04 | Khaled Ahmed | Flexible sensor |
CN106205876A (en) * | 2016-08-31 | 2016-12-07 | 福建农林大学 | A kind of preparation method of flexible fiber element base transparent conductive material |
KR20180044618A (en) * | 2016-10-24 | 2018-05-03 | 현대자동차주식회사 | Transparent electrodes and touch panel comprising the same |
CN106526991A (en) * | 2016-12-02 | 2017-03-22 | 深圳市华星光电技术有限公司 | Electrode manufacturing method and liquid crystal display panel |
EP3340252A1 (en) | 2016-12-22 | 2018-06-27 | Solvay SA | Electrode assembly |
EP3340253A1 (en) | 2016-12-22 | 2018-06-27 | Solvay SA | Uv-resistant electrode assembly |
CN108630708A (en) | 2017-03-15 | 2018-10-09 | 京东方科技集团股份有限公司 | Electrically-conductive backing plate and preparation method thereof, display device |
CN108621753A (en) * | 2017-03-24 | 2018-10-09 | 凯姆控股有限公司 | Planar heating structure |
JP6978227B2 (en) * | 2017-05-31 | 2021-12-08 | 日東電工株式会社 | Dimming film |
CN111093492B (en) * | 2017-09-05 | 2023-01-03 | 首尔大学校产学协力团 | Bioelectrode and forming method thereof |
JP6782211B2 (en) * | 2017-09-08 | 2020-11-11 | 株式会社東芝 | Transparent electrodes, devices using them, and methods for manufacturing devices |
KR101987387B1 (en) * | 2017-09-27 | 2019-06-10 | 한국화학연구원 | Light sintering conductive electrode, and method of manufacturing the same |
CN109822996A (en) * | 2017-11-23 | 2019-05-31 | 宸美(厦门)光电有限公司 | Electrocontrolled color change vehicle glass |
CN108336191B (en) * | 2017-12-08 | 2019-08-02 | 华灿光电(苏州)有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method |
DE102018200659B4 (en) * | 2018-01-16 | 2020-11-05 | Continental Automotive Gmbh | Multi-layer arrangement for a two-dimensional switchable glazing, glazing and vehicle |
WO2019172423A1 (en) * | 2018-03-09 | 2019-09-12 | 大日本印刷株式会社 | Electroconductive film, sensor, touch panel, and image display device |
KR102003427B1 (en) * | 2018-03-28 | 2019-07-24 | 전북대학교산학협력단 | Flexible liquid crystal film using fiber-based foldable transparent electrode and fabrication method thereof |
CN110676341B (en) * | 2018-07-03 | 2021-06-25 | 清华大学 | Semiconductor structure, photoelectric device, photodetector and photodetector |
CN108598288A (en) * | 2018-07-10 | 2018-09-28 | 上海大学 | A kind of composite multifunction OLED electrodes and preparation method thereof |
CN108693597A (en) * | 2018-08-01 | 2018-10-23 | 京东方科技集团股份有限公司 | Light guide structure and its manufacturing method, backlight module, liquid crystal display device |
TWI684519B (en) * | 2018-08-20 | 2020-02-11 | 郭明智 | Composite conductive material |
KR101996833B1 (en) * | 2018-09-21 | 2019-10-01 | 현대자동차 주식회사 | Transparent electrodes and touch panel comprising the same |
CN110083279A (en) * | 2019-05-07 | 2019-08-02 | 业成科技(成都)有限公司 | Transparent conductive material, touch-control structure and touch device |
CN110333793B (en) * | 2019-05-09 | 2022-12-09 | 业成科技(成都)有限公司 | Flexible touch control structure |
CN110429202A (en) * | 2019-07-18 | 2019-11-08 | 武汉华星光电半导体显示技术有限公司 | A kind of flexibility OLED display panel, production method and intelligent wearable device |
CN111112862A (en) * | 2019-12-16 | 2020-05-08 | 顾氏纳米科技(浙江)有限公司 | Method for chemically welding silver nanowires |
US11947233B2 (en) | 2019-12-30 | 2024-04-02 | Sage Electrochromics, Inc. | Controlled randomization of electrochromic ablation patterns |
CN111416058B (en) * | 2020-04-03 | 2024-04-19 | 苏州星烁纳米科技有限公司 | Conductive film, display device and manufacturing method of display device |
CN113650373B (en) * | 2020-05-12 | 2023-09-08 | 京东方科技集团股份有限公司 | Touch layer, preparation method thereof and touch device |
WO2022038900A1 (en) * | 2020-08-19 | 2022-02-24 | 東洋紡株式会社 | Transparent conductive film |
CN114694877A (en) * | 2020-12-28 | 2022-07-01 | 乐凯华光印刷科技有限公司 | Nano-silver wire composite transparent conductive film |
JP2022122545A (en) * | 2021-02-10 | 2022-08-23 | 日東電工株式会社 | transparent conductive film |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040256318A1 (en) * | 2001-10-26 | 2004-12-23 | Kazuhiro Iida | Separating device, analysis system separation method and method of manufacture of separating device |
Family Cites Families (224)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2426318A (en) * | 1945-11-15 | 1947-08-26 | Stanolind Oil & Gas Co | Inhibiting corrosion |
US3164308A (en) | 1961-02-28 | 1965-01-05 | Marcovitch Isaac | Containers for liquified fuel gas |
DE3368092D1 (en) | 1982-07-30 | 1987-01-15 | Mishima Paper Co Ltd | Conductive film for packaging |
FR2537898A1 (en) * | 1982-12-21 | 1984-06-22 | Univ Paris | METHOD FOR REDUCING METAL COMPOUNDS BY THE POLYOLS, AND METAL POWDERS OBTAINED BY THIS PROCESS |
EP0132565B2 (en) | 1983-08-01 | 1998-11-25 | AlliedSignal Inc. | Oriented film laminates of polyamides and ethylene vinyl alcohol |
US4523976A (en) * | 1984-07-02 | 1985-06-18 | Motorola, Inc. | Method for forming semiconductor devices |
US4780371A (en) | 1986-02-24 | 1988-10-25 | International Business Machines Corporation | Electrically conductive composition and use thereof |
JPS63229061A (en) * | 1987-03-18 | 1988-09-22 | テルモ株式会社 | Membrane type artificial lung and its production |
DE3870012D1 (en) * | 1987-04-03 | 1992-05-21 | Ciba Geigy Ag | ANTISTATIC AND ELECTRICALLY CONDUCTING POLYMERS AND MOLDS. |
JP2547765B2 (en) * | 1987-04-07 | 1996-10-23 | 株式会社日立製作所 | Electromagnetic wave shield structure for electronic devices |
US5292784A (en) | 1989-05-23 | 1994-03-08 | Ganns Financial Group, Inc., Dba Glare Tech Industries Incorporated | Anti-glare coating for reflective-transmissive surfaces and method |
US5063125A (en) | 1989-12-29 | 1991-11-05 | Xerox Corporation | Electrically conductive layer for electrical devices |
US5716663A (en) | 1990-02-09 | 1998-02-10 | Toranaga Technologies | Multilayer printed circuit |
CA2038785C (en) | 1990-03-27 | 1998-09-29 | Atsushi Oyamatsu | Magneto-optical recording medium |
US5225244A (en) * | 1990-12-17 | 1993-07-06 | Allied-Signal Inc. | Polymeric anti-reflection coatings and coated articles |
US5165985A (en) * | 1991-06-28 | 1992-11-24 | Minnesota Mining And Manufacturing Company | Method of making a flexible, transparent film for electrostatic shielding |
US5198267A (en) * | 1991-09-20 | 1993-03-30 | Allied-Signal Inc. | Fluoropolymer blend anti-reflection coatings and coated articles |
US5270364A (en) | 1991-09-24 | 1993-12-14 | Chomerics, Inc. | Corrosion resistant metallic fillers and compositions containing same |
US5456747A (en) * | 1991-12-16 | 1995-10-10 | Ibbotson; Peter G. | Anti glare and/or reflection formulation |
EP0554220A1 (en) | 1992-01-29 | 1993-08-04 | Ciba-Geigy Ag | Charge-transfer complexes containing ferrocenes, their preparation and their use |
ATE145420T1 (en) | 1992-07-15 | 1996-12-15 | Ciba Geigy Ag | COATED MATERIAL, ITS PRODUCTION AND USE |
EP0588759A1 (en) * | 1992-08-20 | 1994-03-23 | Ciba-Geigy Ag | Dithiopentacene derivatives, their preparation and their use in charge-transfer complexes |
KR100214428B1 (en) * | 1993-06-30 | 1999-08-02 | 후지무라 마사지카, 아키모토 유미 | Infrared ray cutoff material and infrared cutoff powder used for the same |
US5415815A (en) | 1993-07-14 | 1995-05-16 | Bruno; Art | Film for glare reduction |
US5460701A (en) | 1993-07-27 | 1995-10-24 | Nanophase Technologies Corporation | Method of making nanostructured materials |
EP0653763A1 (en) | 1993-11-17 | 1995-05-17 | SOPHIA SYSTEMS Co., Ltd. | Ultraviolet hardenable, solventless conductive polymeric material |
US5759230A (en) | 1995-11-30 | 1998-06-02 | The United States Of America As Represented By The Secretary Of The Navy | Nanostructured metallic powders and films via an alcoholic solvent process |
US5897945A (en) | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
JP2984595B2 (en) | 1996-03-01 | 1999-11-29 | キヤノン株式会社 | Photovoltaic element |
IT1282387B1 (en) | 1996-04-30 | 1998-03-20 | Videocolor Spa | ANTI-STATIC, ANTI-GLARE COATING FOR A REFLECTION-TRANSMISSION SURFACE |
US5820957A (en) | 1996-05-06 | 1998-10-13 | Minnesota Mining And Manufacturing Company | Anti-reflective films and methods |
JPH1017325A (en) | 1996-07-03 | 1998-01-20 | Sumitomo Metal Mining Co Ltd | Indium oxide powder and its production |
JPH1046382A (en) | 1996-07-26 | 1998-02-17 | Mitsubishi Materials Corp | Production of fine metallic fiber and conductive paint using the fiber |
US6202471B1 (en) | 1997-10-10 | 2001-03-20 | Nanomaterials Research Corporation | Low-cost multilaminate sensors |
US5905000A (en) | 1996-09-03 | 1999-05-18 | Nanomaterials Research Corporation | Nanostructured ion conducting solid electrolytes |
US5952040A (en) | 1996-10-11 | 1999-09-14 | Nanomaterials Research Corporation | Passive electronic components from nano-precision engineered materials |
US5851507A (en) | 1996-09-03 | 1998-12-22 | Nanomaterials Research Corporation | Integrated thermal process for the continuous synthesis of nanoscale powders |
US6344271B1 (en) | 1998-11-06 | 2002-02-05 | Nanoenergy Corporation | Materials and products using nanostructured non-stoichiometric substances |
US5788738A (en) | 1996-09-03 | 1998-08-04 | Nanomaterials Research Corporation | Method of producing nanoscale powders by quenching of vapors |
US6933331B2 (en) | 1998-05-22 | 2005-08-23 | Nanoproducts Corporation | Nanotechnology for drug delivery, contrast agents and biomedical implants |
US5731119A (en) | 1996-11-12 | 1998-03-24 | Eastman Kodak Company | Imaging element comprising an electrically conductive layer containing acicular metal oxide particles and a transparent magnetic recording layer |
US5719016A (en) | 1996-11-12 | 1998-02-17 | Eastman Kodak Company | Imaging elements comprising an electrically conductive layer containing acicular metal-containing particles |
JP3398587B2 (en) | 1996-12-10 | 2003-04-21 | タキロン株式会社 | Moldable antistatic resin molded product |
US6379745B1 (en) | 1997-02-20 | 2002-04-30 | Parelec, Inc. | Low temperature method and compositions for producing electrical conductors |
US6001163A (en) | 1997-04-17 | 1999-12-14 | Sdc Coatings, Inc. | Composition for providing an abrasion resistant coating on a substrate |
US6045925A (en) | 1997-08-05 | 2000-04-04 | Kansas State University Research Foundation | Encapsulated nanometer magnetic particles |
TW505685B (en) | 1997-09-05 | 2002-10-11 | Mitsubishi Materials Corp | Transparent conductive film and composition for forming same |
US6514453B2 (en) | 1997-10-21 | 2003-02-04 | Nanoproducts Corporation | Thermal sensors prepared from nanostructureed powders |
JP2972702B2 (en) | 1998-03-17 | 1999-11-08 | 静岡日本電気株式会社 | Pen input type portable information terminal |
US5867945A (en) | 1998-06-04 | 1999-02-09 | Scafidi; Stephen J. | Self-cleaning gutter |
US6416818B1 (en) | 1998-08-17 | 2002-07-09 | Nanophase Technologies Corporation | Compositions for forming transparent conductive nanoparticle coatings and process of preparation therefor |
US6294401B1 (en) | 1998-08-19 | 2001-09-25 | Massachusetts Institute Of Technology | Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
US6241451B1 (en) | 1998-09-08 | 2001-06-05 | Knight Manufacturing Corp. | Distributor apparatus for spreading materials |
US6541539B1 (en) | 1998-11-04 | 2003-04-01 | President And Fellows Of Harvard College | Hierarchically ordered porous oxides |
US6855202B2 (en) | 2001-11-30 | 2005-02-15 | The Regents Of The University Of California | Shaped nanocrystal particles and methods for making the same |
US6274412B1 (en) | 1998-12-21 | 2001-08-14 | Parelec, Inc. | Material and method for printing high conductivity electrical conductors and other components on thin film transistor arrays |
US6265466B1 (en) | 1999-02-12 | 2001-07-24 | Eikos, Inc. | Electromagnetic shielding composite comprising nanotubes |
JP3909791B2 (en) | 1999-04-19 | 2007-04-25 | 共同印刷株式会社 | Transfer method of transparent conductive film |
US6342097B1 (en) | 1999-04-23 | 2002-01-29 | Sdc Coatings, Inc. | Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability |
US6881604B2 (en) | 1999-05-25 | 2005-04-19 | Forskarpatent I Uppsala Ab | Method for manufacturing nanostructured thin film electrodes |
AU6203400A (en) | 1999-06-30 | 2001-01-31 | Penn State Research Foundation, The | Electrofluidic assembly of devices and components for micro- and nano-scale integration |
EP1194960B1 (en) | 1999-07-02 | 2010-09-15 | President and Fellows of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
JP4358936B2 (en) * | 1999-07-15 | 2009-11-04 | 株式会社半導体エネルギー研究所 | Display device, goggle type display device, method for manufacturing display device, and method for manufacturing goggle type display device |
JP3882419B2 (en) | 1999-09-20 | 2007-02-14 | 旭硝子株式会社 | Coating liquid for forming conductive film and use thereof |
ATE459488T1 (en) | 1999-09-28 | 2010-03-15 | Kyodo Printing Co Ltd | TRANSMISSION BODY AND METHODS OF USE |
EP1230276B1 (en) | 1999-10-20 | 2005-12-14 | Ciba SC Holding AG | Photoinitiator formulations |
JP2002083518A (en) | 1999-11-25 | 2002-03-22 | Sumitomo Metal Mining Co Ltd | Transparent conductive substrate, its manufacturing method, display device using this transparent conductive substrate, coating solution for forming transparent conductive layer, and its manufacturing method |
NL1016815C2 (en) | 1999-12-15 | 2002-05-14 | Ciba Sc Holding Ag | Oximester photo initiators. |
WO2001044132A1 (en) | 1999-12-17 | 2001-06-21 | Asahi Glass Company, Limited | Dispersion composition of ultrafine particles, composition for interlayer for laminated glass, interlayer, and laminated glass |
JP2001205600A (en) | 2000-01-27 | 2001-07-31 | Canon Inc | Fine structure and its manufacture |
JP2004502554A (en) | 2000-03-22 | 2004-01-29 | ユニバーシティー オブ マサチューセッツ | Nano cylinder array |
FR2807052B1 (en) | 2000-04-03 | 2003-08-15 | Clariant France Sa | SILICO-ACRYLIC COMPOSITIONS, PROCESS FOR THEIR PREPARATION AND THEIR USE |
US6773823B2 (en) | 2000-04-07 | 2004-08-10 | University Of New Orleans Research And Technology Foundation, Inc. | Sequential synthesis of core-shell nanoparticles using reverse micelles |
JP2001291431A (en) | 2000-04-10 | 2001-10-19 | Jsr Corp | Composition for anisotropic conductive sheet, anisotropic conductive sheet, its production and contact structure using anisotropic conductive sheet |
JP4077596B2 (en) | 2000-05-31 | 2008-04-16 | 中島工業株式会社 | Transfer material having low reflective layer and method for producing molded product using the same |
ATE320318T1 (en) | 2000-06-30 | 2006-04-15 | Ngimat Co | METHOD FOR DEPOSITING MATERIALS |
JP4788852B2 (en) | 2000-07-25 | 2011-10-05 | 住友金属鉱山株式会社 | Transparent conductive substrate, manufacturing method thereof, transparent coating layer forming coating solution used in the manufacturing method, and display device to which transparent conductive substrate is applied |
JP4759215B2 (en) | 2000-08-15 | 2011-08-31 | ハマヘッド デザイン アンド ディベラップメント、インコーポレイテッド | Stomach access port |
EP1325089A2 (en) | 2000-09-25 | 2003-07-09 | Chemetall GmbH | Method for pretreating and coating metal surfaces, prior to forming, with a paint-like coating and use of substrates so coated |
GB0025016D0 (en) | 2000-10-12 | 2000-11-29 | Micromass Ltd | Method nad apparatus for mass spectrometry |
US6537667B2 (en) | 2000-11-21 | 2003-03-25 | Nissan Chemical Industries, Ltd. | Electro-conductive oxide particle and process for its production |
ATE394707T1 (en) | 2000-12-04 | 2008-05-15 | Ciba Holding Inc | ONIUM SALTS AND THEIR USE AS LATEN ACIDS |
KR100815038B1 (en) | 2000-12-12 | 2008-03-18 | 코니카 미놀타 홀딩스 가부시키가이샤 | Method for Forming Thin Film, Article Having Thin Film, Optical Film, Dielectric Coated Electrode, and Plasma Discharge Processor |
US6744425B2 (en) | 2000-12-26 | 2004-06-01 | Bridgestone Corporation | Transparent electroconductive film |
US6444495B1 (en) | 2001-01-11 | 2002-09-03 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
JP3560333B2 (en) | 2001-03-08 | 2004-09-02 | 独立行政法人 科学技術振興機構 | Metal nanowire and method for producing the same |
CN1543399B (en) | 2001-03-26 | 2011-02-23 | 艾考斯公司 | Coatings containing carbon nanotubes |
TW554388B (en) | 2001-03-30 | 2003-09-21 | Univ California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
JP2002322558A (en) | 2001-04-25 | 2002-11-08 | Konica Corp | Thin film forming method, optical film, polarizing plate and image display device |
US7238472B2 (en) | 2001-05-25 | 2007-07-03 | Nanosphere, Inc. | Non-alloying core shell nanoparticles |
US7147687B2 (en) | 2001-05-25 | 2006-12-12 | Nanosphere, Inc. | Non-alloying core shell nanoparticles |
US6697881B2 (en) | 2001-05-29 | 2004-02-24 | Hewlett-Packard Development Company, L.P. | Method and system for efficient format, read, write, and initial copy processing involving sparse logical units |
US20050164515A9 (en) | 2001-06-05 | 2005-07-28 | Belcher Angela M. | Biological control of nanoparticle nucleation, shape and crystal phase |
US20030148380A1 (en) | 2001-06-05 | 2003-08-07 | Belcher Angela M. | Molecular recognition of materials |
US6762237B2 (en) | 2001-06-08 | 2004-07-13 | Eikos, Inc. | Nanocomposite dielectrics |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
EP1444701A4 (en) | 2001-07-27 | 2005-01-12 | Eikos Inc | Conformal coatings comprising carbon nanotubes |
US6934001B2 (en) | 2001-08-13 | 2005-08-23 | Sharp Laboratories Of America, Inc. | Structure and method for supporting a flexible substrate |
KR100438408B1 (en) | 2001-08-16 | 2004-07-02 | 한국과학기술원 | Method for Synthesis of Core-Shell type and Solid Solution type Metallic Alloy Nanoparticles via Transmetalation Reactions and Their Applications |
ITTO20020033A1 (en) | 2002-01-11 | 2003-07-11 | Fiat Ricerche | ELECTRO-LUMINESCENT DEVICE. |
WO2003068674A1 (en) | 2002-02-15 | 2003-08-21 | Japan Science And Technology Agency | Noble-metal nanowire structure and process for producing the same |
EP1339082A1 (en) | 2002-02-25 | 2003-08-27 | Asahi Glass Company Ltd. | Impact-resistant film for flat display panel, and flat display panel |
JP4556204B2 (en) | 2003-02-06 | 2010-10-06 | 三菱マテリアル株式会社 | Metal nanofiber-containing composition and use thereof |
US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
US6946410B2 (en) | 2002-04-05 | 2005-09-20 | E. I. Du Pont De Nemours And Company | Method for providing nano-structures of uniform length |
WO2004034421A2 (en) | 2002-05-10 | 2004-04-22 | The Trustees Of Columbia University In The City Of New York | Method for electric field assisted deposition of films of nanoparticles |
TWI360098B (en) * | 2002-05-17 | 2012-03-11 | Semiconductor Energy Lab | Display apparatus and driving method thereof |
CN100341629C (en) * | 2002-05-21 | 2007-10-10 | 艾考斯公司 | Method for patterning carbon nanotube coating and carbon nanotube wiring |
KR101043307B1 (en) | 2002-06-13 | 2011-06-22 | 시마 나노 테크 이스라엘 리미티드 | A method for the production of conductive and transparent nano-coatings and nano-inks and nano-powder coatings and inks produced thereby |
JP3606855B2 (en) * | 2002-06-28 | 2005-01-05 | ドン ウン インターナショナル カンパニー リミテッド | Method for producing carbon nanoparticles |
JP3842177B2 (en) * | 2002-07-03 | 2006-11-08 | 独立行政法人科学技術振興機構 | Noble metal nanotube and method for producing the same |
JP2004035962A (en) | 2002-07-04 | 2004-02-05 | Toyota Motor Corp | Method of producing metal nanotube |
JP2004055298A (en) | 2002-07-18 | 2004-02-19 | Catalysts & Chem Ind Co Ltd | Coating solution for forming transparent conductive film and substrate with transparent conductive coat, and display device |
JP4134313B2 (en) | 2002-07-24 | 2008-08-20 | Dowaエレクトロニクス株式会社 | Method for producing conductive powder |
JP4266732B2 (en) | 2002-08-30 | 2009-05-20 | キヤノン株式会社 | Multilayer diffractive optical element |
CA2498194A1 (en) | 2002-09-04 | 2004-04-29 | Board Of Regents, University Of Texas System | Composition, method and use of bi-functional biomaterials |
AU2003279708A1 (en) * | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
EP2399970A3 (en) | 2002-09-05 | 2012-04-18 | Nanosys, Inc. | Nanocomposites |
US7572393B2 (en) * | 2002-09-05 | 2009-08-11 | Nanosys Inc. | Organic species that facilitate charge transfer to or from nanostructures |
JP4134314B2 (en) | 2002-09-13 | 2008-08-20 | Dowaエレクトロニクス株式会社 | Method for producing conductive powder |
US20050064508A1 (en) | 2003-09-22 | 2005-03-24 | Semzyme | Peptide mediated synthesis of metallic and magnetic materials |
US7051945B2 (en) | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
US7067867B2 (en) | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
US7135728B2 (en) | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7560160B2 (en) | 2002-11-25 | 2009-07-14 | Materials Modification, Inc. | Multifunctional particulate material, fluid, and composition |
US6949931B2 (en) | 2002-11-26 | 2005-09-27 | Honeywell International Inc. | Nanotube sensor |
JP3972093B2 (en) | 2002-12-04 | 2007-09-05 | 独立行政法人物質・材料研究機構 | β-Ga2O3 nano whisker and method for producing the same |
WO2004052559A2 (en) * | 2002-12-06 | 2004-06-24 | Eikos, Inc. | Optically transparent nanostructured electrical conductors |
JP4341005B2 (en) | 2002-12-17 | 2009-10-07 | 三菱マテリアル株式会社 | Metal nanowire-containing composition and electromagnetic wave shielding filter |
US6975067B2 (en) | 2002-12-19 | 2005-12-13 | 3M Innovative Properties Company | Organic electroluminescent device and encapsulation method |
JP2004196981A (en) | 2002-12-19 | 2004-07-15 | Toyobo Co Ltd | Resin molded article having conductive surface |
KR100502821B1 (en) | 2002-12-26 | 2005-07-22 | 이호영 | Low temperature formation method for emitter tip including copper oxide nanowire or copper nanowire and display device or light source having emitter tip manufactured by using the same method |
JP2007112133A (en) | 2003-01-30 | 2007-05-10 | Takiron Co Ltd | Electroconductive shaped article |
US20060257638A1 (en) | 2003-01-30 | 2006-11-16 | Glatkowski Paul J | Articles with dispersed conductive coatings |
JP2004230690A (en) | 2003-01-30 | 2004-08-19 | Takiron Co Ltd | Antistatic transparent resin sheet |
JP4471346B2 (en) | 2003-01-31 | 2010-06-02 | タキロン株式会社 | Electromagnetic shield |
JP2004241228A (en) * | 2003-02-05 | 2004-08-26 | Toin Gakuen | Plastic film electrode and photoelectric cell using it |
JP2004253326A (en) | 2003-02-21 | 2004-09-09 | Toyobo Co Ltd | Conductive film |
JP2004256702A (en) | 2003-02-26 | 2004-09-16 | Toyobo Co Ltd | Conductive coating |
US7029514B1 (en) | 2003-03-17 | 2006-04-18 | University Of Rochester | Core-shell magnetic nanoparticles and nanocomposite materials formed therefrom |
US6916842B2 (en) | 2003-03-24 | 2005-07-12 | E. I. Du Pont De Nemours And Company | Production of 5-methyl-n-(methyl aryl)-2-pyrrolidone, 5-methyl-n-(methyl cycloalkyl)-2-pyrrolidone and 5-methyl-n-alkyl-2-pyrrolidone by reductive amination of levulinic acid esters with cyano compounds |
US20070003472A1 (en) * | 2003-03-24 | 2007-01-04 | Tolt Zhidan L | Electron emitting composite based on regulated nano-structures and a cold electron source using the composite |
US6936761B2 (en) | 2003-03-29 | 2005-08-30 | Nanosolar, Inc. | Transparent electrode, optoelectronic apparatus and devices |
CN1442872A (en) * | 2003-04-17 | 2003-09-17 | 上海交通大学 | Multilayer nano transparent conductive membrane and its preparation method |
EP1619524A4 (en) * | 2003-04-28 | 2009-05-20 | Takiron Co | Electromagnetic-shielding light diffusion sheet |
TWI250202B (en) | 2003-05-13 | 2006-03-01 | Eternal Chemical Co Ltd | Process and slurry for chemical mechanical polishing |
US7033416B2 (en) | 2003-05-22 | 2006-04-25 | The United States Of America As Represented By The Secretary Of The Navy | Low temperature synthesis of metallic nanoparticles |
US20070128905A1 (en) * | 2003-06-12 | 2007-06-07 | Stuart Speakman | Transparent conducting structures and methods of production thereof |
US7507436B2 (en) | 2003-07-04 | 2009-03-24 | Nitto Denko Corporation | Electroconductive cellulose-based film, a method of producing the same, an anti-reflection film, an optical element, and an image display |
CA2532991A1 (en) | 2003-08-04 | 2005-02-24 | Nanosys, Inc. | System and process for producing nanowire composites and electronic substrates therefrom |
CN102019434A (en) | 2003-09-05 | 2011-04-20 | 三菱麻铁里亚尔株式会社 | Process for producing metal microparticle and composition containing the same |
US7416993B2 (en) | 2003-09-08 | 2008-08-26 | Nantero, Inc. | Patterned nanowire articles on a substrate and methods of making the same |
US7062848B2 (en) | 2003-09-18 | 2006-06-20 | Hewlett-Packard Development Company, L.P. | Printable compositions having anisometric nanostructures for use in printed electronics |
US7067328B2 (en) | 2003-09-25 | 2006-06-27 | Nanosys, Inc. | Methods, devices and compositions for depositing and orienting nanostructures |
JP2005103723A (en) | 2003-10-01 | 2005-04-21 | National Institute Of Advanced Industrial & Technology | Single crystallization method and device of metal nanowire |
US6982206B1 (en) | 2003-10-02 | 2006-01-03 | Lsi Logic Corporation | Mechanism for improving the structural integrity of low-k films |
JP2007517500A (en) | 2003-10-15 | 2007-07-05 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | Multifunctional biological materials as scaffolds for electronic, optical, magnetic, semiconductor, and biotechnology applications |
KR100570206B1 (en) | 2003-10-15 | 2006-04-12 | 주식회사 하이닉스반도체 | Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same |
KR100570634B1 (en) | 2003-10-16 | 2006-04-12 | 한국전자통신연구원 | Electromagnetic shielding materials manufactured by filling carbon tube and metallic powder as electrical conductor |
WO2005040460A1 (en) | 2003-10-24 | 2005-05-06 | Kyoto University | Apparatus for producing metal nanotube and method for producing metal nanotube |
US6896739B1 (en) | 2003-12-03 | 2005-05-24 | For Your Ease Only, Inc. | Anti-tarnish aqueous treatment |
EP1541528A1 (en) * | 2003-12-08 | 2005-06-15 | Institut Jozef Stefan | Quasi-one-dimensional polymers based on the metal-chalcogen-halogen system |
JP2005181392A (en) | 2003-12-16 | 2005-07-07 | Canon Inc | Optical system |
JP4807933B2 (en) * | 2003-12-17 | 2011-11-02 | 株式会社アルバック | Method for forming transparent conductive film and transparent electrode |
WO2005078770A2 (en) | 2003-12-19 | 2005-08-25 | The Regents Of The University Of California | Active electronic devices with nanowire composite components |
TWI243004B (en) | 2003-12-31 | 2005-11-01 | Ind Tech Res Inst | Method for manufacturing low-temperature highly conductive layer and its structure |
US7923109B2 (en) | 2004-01-05 | 2011-04-12 | Board Of Regents, The University Of Texas System | Inorganic nanowires |
US20050165120A1 (en) | 2004-01-22 | 2005-07-28 | Ashavani Kumar | Process for phase transfer of hydrophobic nanoparticles |
JP2005239481A (en) | 2004-02-26 | 2005-09-08 | Nagoya Institute Of Technology | Metal occlusion carbon nanotube aggregate, its manufacturing method, metal occlusion carbon nanotube, metal nanowire, and its manufacturing method |
KR100625999B1 (en) | 2004-02-26 | 2006-09-20 | 삼성에스디아이 주식회사 | Donor sheet, manufacturing method of the donor sheet, manufacturing method of TFT using the donor sheet, and manufacturing method of flat panel display using the donor sheet |
US7381579B2 (en) * | 2004-02-26 | 2008-06-03 | Samsung Sdi Co., Ltd. | Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet |
JP2005277405A (en) | 2004-02-27 | 2005-10-06 | Takiron Co Ltd | Optically transparent antinoise formed body for image display device |
JP2005302695A (en) * | 2004-03-18 | 2005-10-27 | Toyota Central Res & Dev Lab Inc | Photoelectrode and dye-sensitized solar cell equipped with above |
JP2005311330A (en) | 2004-03-22 | 2005-11-04 | Takiron Co Ltd | Radio wave absorber |
JP2005281357A (en) | 2004-03-29 | 2005-10-13 | Koyo Sangyo Co Ltd | Conductive coating |
JP2005335054A (en) | 2004-04-27 | 2005-12-08 | Japan Science & Technology Agency | Metallic nano wire, and its manufacturing method |
JP4524745B2 (en) | 2004-04-28 | 2010-08-18 | 三菱マテリアル株式会社 | Metal nanowire-containing conductive material and use thereof |
JP4491776B2 (en) | 2004-04-28 | 2010-06-30 | 三菱マテリアル株式会社 | Method for producing conductive paste, etc. |
JP2006049843A (en) | 2004-06-29 | 2006-02-16 | Takiron Co Ltd | Antistatic molding for image display apparatus |
WO2006006462A1 (en) | 2004-07-08 | 2006-01-19 | Mitsubishi Materials Corporation | Method for producing metal fine particle, metal fine particle produced thereby, composition containing same, light absorbing material, and application thereof |
US7255796B2 (en) | 2004-07-08 | 2007-08-14 | General Electric Company | Method of preventing hydrogen sulfide odor generation in an aqueous medium |
JP2006035773A (en) | 2004-07-29 | 2006-02-09 | Takiron Co Ltd | Self-adhesive conductive molding |
JP2006035771A (en) | 2004-07-29 | 2006-02-09 | Takiron Co Ltd | Conductive layer transfer sheet |
KR101511231B1 (en) * | 2004-09-13 | 2015-04-17 | 스미토모 긴조쿠 고잔 가부시키가이샤 | Transparent conductive film and meethod of fabicating the same transparent conductive base material and light-emitting device |
JP4257429B2 (en) | 2004-09-13 | 2009-04-22 | 国立大学法人東北大学 | Method for producing metal nanowire by controlling atom diffusion and metal nanowire produced by this method |
JP4372654B2 (en) | 2004-09-30 | 2009-11-25 | 住友大阪セメント株式会社 | Method for producing rod-shaped conductive tin-containing indium oxide fine powder |
JP4372653B2 (en) | 2004-09-30 | 2009-11-25 | 住友大阪セメント株式会社 | Method for producing rod-shaped conductive tin-containing indium oxide fine powder |
US20060070559A1 (en) | 2004-09-30 | 2006-04-06 | Incredible Technologies, Inc. | Unitary currency/credit card unit |
US7270694B2 (en) | 2004-10-05 | 2007-09-18 | Xerox Corporation | Stabilized silver nanoparticles and their use |
US7345307B2 (en) | 2004-10-12 | 2008-03-18 | Nanosys, Inc. | Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires |
JP2006111675A (en) | 2004-10-13 | 2006-04-27 | Mitsubishi Materials Corp | Metal nanorod alignment composition and its application |
JP2006128233A (en) * | 2004-10-27 | 2006-05-18 | Hitachi Ltd | Semiconductor material, field effect transistor, and manufacturing method thereof |
JP2006133528A (en) | 2004-11-05 | 2006-05-25 | Takiron Co Ltd | Anti-static light diffusion sheet |
KR100661116B1 (en) * | 2004-11-22 | 2006-12-22 | 가부시키가이샤후지쿠라 | Electrode, photoelectric conversion element, and dye-sensitized solar cell |
US7349045B2 (en) | 2004-11-24 | 2008-03-25 | Chunghwa Picture Tubes, Ltd. | Displacement-designed color filter structure and method of forming the same |
EP1818722A4 (en) | 2004-12-03 | 2010-02-17 | Tokyo Ohka Kogyo Co Ltd | Chemical amplification photoresist composition, photoresist layer laminate, method for producing photoresist composition, method for producing photoresist pattern and method for producing connecting terminal |
JP4665499B2 (en) | 2004-12-10 | 2011-04-06 | 三菱マテリアル株式会社 | Metal fine particles, production method thereof, composition containing the same, and use thereof |
JP2006171336A (en) | 2004-12-15 | 2006-06-29 | Takiron Co Ltd | Transparent electrode member for image display, and the image display device |
TWI246103B (en) * | 2004-12-22 | 2005-12-21 | Powertip Technology Corp | Carbon nanotube substrate structure and the manufacturing method thereof |
US20070153362A1 (en) | 2004-12-27 | 2007-07-05 | Regents Of The University Of California | Fabric having nanostructured thin-film networks |
JP2008076416A (en) | 2004-12-27 | 2008-04-03 | Sharp Corp | Driving device for display panel, display panel, display device with the same, and driving method for display panel |
US20060172282A1 (en) * | 2005-01-31 | 2006-08-03 | Naik Rajesh R | Peptide templates for nanoparticle synthesis obtained through PCR-driven phage display method |
JP4821951B2 (en) | 2005-02-23 | 2011-11-24 | 三菱マテリアル株式会社 | Wire-shaped gold fine particles, production method thereof, containing composition and use |
WO2006091823A2 (en) * | 2005-02-25 | 2006-08-31 | The Regents Of The University Of California | Electronic devices with carbon nanotube components |
JP2006239790A (en) | 2005-03-01 | 2006-09-14 | Tohoku Univ | Metal nano-wire producing method and metal nano-wire |
US7489432B2 (en) | 2005-03-25 | 2009-02-10 | Ricoh Company, Ltd. | Electrochromic display device and display apparatus |
JP2006272876A (en) | 2005-03-30 | 2006-10-12 | Takiron Co Ltd | Electroconductive element |
JP2006310353A (en) | 2005-04-26 | 2006-11-09 | Takiron Co Ltd | Radio wave absorber |
US7902639B2 (en) | 2005-05-13 | 2011-03-08 | Siluria Technologies, Inc. | Printable electric circuits, electronic components and method of forming the same |
KR100686796B1 (en) | 2005-05-17 | 2007-02-26 | 삼성에스디아이 주식회사 | Battery case having electromagnetic wave shielding layer and Pouch type secondary battery using it |
KR100720101B1 (en) * | 2005-08-09 | 2007-05-18 | 삼성전자주식회사 | Top-emitting Light Emitting Devices Using Nano-structured Multifunctional Ohmic Contact Layer And Method Of Manufacturing Thereof |
TWI428937B (en) | 2005-08-12 | 2014-03-01 | Cambrios Technologies Corp | Nanowires-based transparent conductors |
JP4974332B2 (en) | 2005-09-07 | 2012-07-11 | 一般財団法人電力中央研究所 | Nanostructure and manufacturing method thereof |
US7341944B2 (en) | 2005-09-15 | 2008-03-11 | Honda Motor Co., Ltd | Methods for synthesis of metal nanowires |
JP2007091859A (en) | 2005-09-28 | 2007-04-12 | Koyo Sangyo Co Ltd | Conductive paint |
JP2007105822A (en) | 2005-10-12 | 2007-04-26 | National Institute For Materials Science | Atomic scale metal wire or metal nanocluster, and method for manufacturing same |
GB2434692A (en) * | 2005-12-29 | 2007-08-01 | Univ Surrey | Photovoltaic or electroluminescent devices with active region comprising a composite polymer and carbon nanotube material. |
US7507449B2 (en) * | 2006-05-30 | 2009-03-24 | Industrial Technology Research Institute | Displays with low driving voltage and anisotropic particles |
US8071419B2 (en) * | 2006-06-12 | 2011-12-06 | Nanosolar, Inc. | Thin-film devices formed from solid particles |
US7630041B2 (en) * | 2006-06-23 | 2009-12-08 | Tsinghua University | Liquid crystal cell assembly for liquid crystal display |
WO2008127313A2 (en) * | 2006-11-17 | 2008-10-23 | The Regents Of The University Of California | Electrically conducting and optically transparent nanowire networks |
JP2009057518A (en) * | 2007-09-03 | 2009-03-19 | Institute Of Physical & Chemical Research | Anisotropic film and manufacturing method of it |
JP2012507872A (en) * | 2008-10-30 | 2012-03-29 | フェイ プーン、ハク | Hybrid transparent conductive electrode |
-
2008
- 2008-04-18 JP JP2010504302A patent/JP6098860B2/en active Active
- 2008-04-18 CN CN200880012842.1A patent/CN101689568B/en active Active
- 2008-04-18 KR KR1020097024079A patent/KR101456838B1/en active IP Right Review Request
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- 2008-04-18 WO PCT/US2008/060937 patent/WO2008131304A1/en active Application Filing
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- 2008-04-18 CN CN201410024659.0A patent/CN103777417B/en active Active
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-
2010
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-
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- 2011-08-09 US US13/206,279 patent/US10244637B2/en active Active
-
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- 2015-04-13 JP JP2015081713A patent/JP6181698B2/en active Active
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040256318A1 (en) * | 2001-10-26 | 2004-12-23 | Kazuhiro Iida | Separating device, analysis system separation method and method of manufacture of separating device |
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Also Published As
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US8018563B2 (en) | 2011-09-13 |
EP2147466B9 (en) | 2014-07-16 |
JP2010525526A (en) | 2010-07-22 |
KR101456838B1 (en) | 2014-11-04 |
EP2147466A1 (en) | 2010-01-27 |
JP2015135831A (en) | 2015-07-27 |
JP6181698B2 (en) | 2017-08-16 |
JP6098860B2 (en) | 2017-03-22 |
CN103777417B (en) | 2017-01-18 |
EP2147466B1 (en) | 2014-03-12 |
CN103777417A (en) | 2014-05-07 |
KR20100017128A (en) | 2010-02-16 |
US20190191569A1 (en) | 2019-06-20 |
US20080259262A1 (en) | 2008-10-23 |
TW200924203A (en) | 2009-06-01 |
US11224130B2 (en) | 2022-01-11 |
SG156218A1 (en) | 2009-11-26 |
US20120033367A1 (en) | 2012-02-09 |
CN101689568B (en) | 2014-02-26 |
EP2477229B1 (en) | 2021-06-23 |
CN101689568A (en) | 2010-03-31 |
EP2477229A3 (en) | 2012-09-19 |
TWI556456B (en) | 2016-11-01 |
TW201543701A (en) | 2015-11-16 |
HK1134860A1 (en) | 2010-05-14 |
TWI487125B (en) | 2015-06-01 |
US10244637B2 (en) | 2019-03-26 |
EP2477229A2 (en) | 2012-07-18 |
WO2008131304A1 (en) | 2008-10-30 |
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