US20100013100A1 - Method and System for Forming Conductive Bumping with Copper Interconnection - Google Patents
Method and System for Forming Conductive Bumping with Copper Interconnection Download PDFInfo
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- US20100013100A1 US20100013100A1 US12/258,956 US25895608A US2010013100A1 US 20100013100 A1 US20100013100 A1 US 20100013100A1 US 25895608 A US25895608 A US 25895608A US 2010013100 A1 US2010013100 A1 US 2010013100A1
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- layer
- dielectric layer
- diffusion barrier
- barrier layer
- copper
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Abstract
Description
- This application claims priority to Chinese Application No. 200810040739X, filed Jul. 15, 2008, commonly assigned, and incorporated herein by reference for all purposes.
- The present invention is directed to integrated circuits and their processing for the manufacture of semiconductor devices. More particularly, the invention provides a method and system for forming conductive bumping with copper interconnection. Merely by way of example, the invention has been applied to flip chip lead free bumping process for the manufacture of integrated circuit with one or more copper interconnects. But it would be recognized that the invention has a much broader range of applicability.
- Integrated circuits or “ICs” have evolved from a handful of interconnected devices fabricated on a single chip of silicon to millions of devices. Current ICs provide performance and complexity far beyond what was originally imagined. In order to achieve improvements in complexity and circuit density (i.e., the number of devices capable of being packed onto a given chip area), the size of the smallest device feature, also known as the device “geometry”, has become smaller with each generation of ICs. Semiconductor devices are now being fabricated with features less than a quarter of a micron across.
- Increasing circuit density has not only improved the complexity and performance of ICs but has also provided lower cost parts to the consumer. An IC fabrication facility can cost hundreds of millions, or even billions, of dollars. Each fabrication facility will have a certain throughput of wafers, and each wafer will have a certain number of ICs on it. Therefore, by making the individual devices of an IC smaller, more devices may be fabricated on each wafer, thus increasing the output of the fabrication facility. Making devices smaller is very challenging, as each process used in IC fabrication has a limit. That is to say, a given process typically only works down to a certain feature size, and then either the process or the device layout needs to be changed. An example is that for increasing packing density in IC, copper/low-k dielectric materials have been rapidly replacing conventional aluminum-alloy/SiO2-based interconnects in integrated circuits to reduce the interconnect delays for faster devices with low power consumption and cost.
- Currently for copper interconnect chips, aluminum alloy pad is still widely used. The aluminum alloy pad is easy for wire bonding as an interconnect method and the aluminum pad can act as fuse function. However, the disadvantage of using aluminum pad also can be seen by its high resistance compared to copper, additional mask needed to pattern the bond pad to overcome the difficulties in the aluminum chemical-mechanical planarization (CMP) process, and difficulty in control of cross contamination between aluminum and copper.
- From the above, it is seen that an improved technique for processing semiconductor devices is desired.
- The present invention is directed to integrated circuits and their processing for the manufacture of semiconductor devices. More particularly, the invention provides a method and system for forming conductive bumping with copper interconnection. Merely by way of example, the invention has been applied to flip chip lead free bumping process for the manufacture of integrated circuit with one or more copper interconnects. But it would be recognized that the invention has a much broader range of applicability.
- According to an embodiment of the present invention, a method for making an integrated circuit system with one or more copper interconnects is provided, the one or more copper interconnects are conductively connected with a substrate. The method includes depositing and patterning a first dielectric layer to form a first via and filling the first via through the first dielectric layer with a copper material. The method further includes depositing and patterning a second dielectric layer in contact with the first dielectric layer to form a second via, and forming a diffusion barrier layer. The diffusion barrier layer at least partially fills the second via through the second dielectric layer. At least a first part of the diffusion barrier layer in direct contact with the copper material, and at least a second part of the diffusion barrier layer in direct contact with the second dielectric layer. Moreover, the method includes depositing and patterning a photoresist layer on the diffusion barrier layer, and at least partially filling the second via with a gold material. The gold material is conductively connected to the copper material through the diffusion barrier layer. The method further includes removing the photoresist and the diffusion barrier layer not covering by the gold material. Additionally, the method includes conductively connecting the gold material with the substrate.
- According to another embodiment of the present invention, an integrated circuit system with one or more copper interconnects is provided. The one or more copper interconnects are in conductive contact with a substrate. The integrated circuit system includes a first dielectric layer, and a copper material filling a first via through the first dielectric layer. Additionally, the integrated circuit system includes a second dielectric layer in contact with the first dielectric layer, and a diffusion barrier layer. The diffusion barrier layer at least partially fills a second via through the second dielectric layer. At least a first part of the diffusion barrier layer is in direct contact with the copper material, and at least a second part of the diffusion barrier layer is in direct contact with the second dielectric layer. Moreover, the integrated circuit system includes a gold material at least partially filling the second via. The gold material is conductively connected with the copper material through the diffusion barrier layer and conductively connected with a substrate.
- Many benefits are achieved by way of the present invention over conventional techniques. For example, in lead free flip chip gold bumping process, the present technique provides an replacement of the aluminum wire bonding by gold bumping. In another example, the present technique provides a full copper interconnection for the gold bumping process without Al material for the whole process. Some embodiments of the present invention provide an integrated circuit system with one or more copper interconnects without Al material. Certain embodiments of the present invention provide a process that is compatible with conventional process technology. Moreover, the process does not require an additional mask for patterning the copper bond pad. Some embodiments of the present invention utilize copper CMP process to automatically patterning the copper bond pad. Certain embodiments of the present invention reduce the possibility of the cross contamination between aluminum and copper. Some embodiments of the present invention improve the speed of the whole chip. Depending upon the embodiment, one or more of these benefits may be achieved. These and other benefits will be described in more throughout the present specification and more particularly below.
- Various additional objects, features and advantages of the present invention can be more fully appreciated with reference to the detailed description and accompanying drawings that follow.
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FIG. 1 is a simplified diagram of a conventional integrated circuit system with copper interconnects. -
FIG. 2 is a simplified diagram of an integrated circuit system with copper interconnects according to an embodiment of the present invention. -
FIG. 3 is a simplified method for making an integrated circuit system with one or more copper interconnects according to an embodiment of the present invention. -
FIGS. 4A-4G are simplified diagrams showing the processes to make bond pad for an integrated circuit system with one or more copper interconnects and to form conductive contact with a substrate through a flip chip bumping according to some embodiments of the present invention. - The present invention is directed to integrated circuits and their processing for the manufacture of semiconductor devices. More particularly, the invention provides a method and system for forming conductive bumping with copper interconnection. Merely by way of example, the invention has been applied to flip chip lead free bumping process for the manufacture of integrated circuit with one or more copper interconnects. But it would be recognized that the invention has a much broader range of applicability.
- Conventionally, aluminum (Al) pad is still widely used in the copper interconnect chips. The main purpose of implementation of Al pad in copper interconnection is for accommodating the wire bonding.
FIG. 1 shows a simplified diagram of a conventional integrated circuits with cooper interconnects and Al pad on top of copper material for wire bonding. Thefirst dielectric layer 110 is a low-k dielectric material that can be fluorinated silica glass (FSG) deposited on top of anitride layer 105.Copper 130 fills at least partially a first via 120, and the first via 120 is patterned through thefirst dielectric layer 110. On thefirst dielectric layer 110, asecond dielectric layer 150 is deposited and patterned to provide a second via 160. Aluminum material is directly added on top ofcopper material 130 in the second via 160 and contact withcopper material 130 to formAl pad 170. Then adiffusion barrier layer 180 is deposited onAl pad 170. On thebarrier layer 180, gold material is added to form agold pad 190. In such an integrated circuit, there are several significant disadvantages for usingAl pad 170. First of all, aluminum has high resistance compared to copper. Secondly, due to the difficulties in the Al CMP process, additional mask often is required in order to pattern the bond pad. Further, it is difficult in metallurgical control of the cross contamination betweenAl pad 170 and copper interconnects 130. -
FIG. 2 is a simplified diagram of an integrated circuit system with one or more copper interconnects according to one embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. The integrated circuits with one or more copper interconnects 200 includes anitride layer 205, adielectric layer 210, a via 220, copper interconnects 230, and adielectric layer 250, a via 260, adiffusion barrier layer 280, agold pad 290. - The
nitride layer 205 may be located on a substrate. For example, thenitride layer 205 is a passivation layer for one or more devices. In another example, thenitride layer 205 may be replaced by other type of dielectric material. According to certain embodiments of the invention, thenitride layer 205 may be replaced by oxide and/or oxynitride. - On top of the
nitride layer 205, thedielectric layer 210 is deposited. In one embodiment, thedielectric layer 210 includes a low-k dielectric material. In one example, the low-k dielectric material is fluorinated silica glass (FSG). In another example, the low-k dielectric material is carbonized silicon dioxide. - The
dielectric layer 210 is patterned to provide a via 220. For example, the via 220 extends from the bottom surface of thedielectric layer 210 to the top surface of thedielectric layer 210. In another example, the via 220 has a predetermined shape. In one embodiment, the via 220 has a cross-section varying with the depth of the via. In another embodiment, the side surface of thevia 220 includes one or more steps. - As shown in
FIG. 2 , the via 220 is filled with copper material to form one or more copper interconnects 230. The surface oftop copper interconnects 230 and the surroundingdielectric layer 210 is planarized, on which thedielectric layer 250 is deposited. In one embodiment, thedielectric layer 250 includes a sub-layer of 251 and a sub-layer 252 sequentially. For example, the sub-layer 251 is a passivation oxide. In another example, the sub-layer 251 is silicon-rich oxide. In yet another example, the sub-layer 252 is selected from a group consisting of passivation SiON, Nitride, BCB (bisbenzocyclobutene), and polyimide. In an embodiment, BCB is used for the sub-layer 252 due to its low dielectric constant of 2.7 and low water absorption. - one of The
dielectric layer 250 is patterned to form a via 260. The via 260 is aligned to and connected with at least onecopper interconnect 230. For example, the via 260 extends from the top of thecopper interconnect 230 to the top surface of thedielectric layer 250. In another example, the via 260 has a predetermined shape. In one embodiment, the cross-section dimension of the via 260 at the bottom is wider than the cross-section dimension ofcopper interconnect 230 at the top. In another embodiment, the via 260 has a cross-section varying with the depth of the via. - As shown in
FIG. 2 , adiffusion barrier layer 280 overlays the surfaces of the via 260 including the side and the bottom of the via. Thediffusion barrier layer 280 extends outside the upper edge of the via 260 to cover additional surface region of the dielectric layer 240 surrounding the via 260. For example, thediffusion barrier layer 280 is includes a metal material selected from a group consisting of Ta, TaN, TaN/Ta, TiN, TiSiN, W, TiW, or WN. In another example, a gold seed layer is included in thediffusion barrier layer 280. - On top of the
diffusion barrier layer 280, gold material is plated to form agold pad 290. In one embodiment, thegold pad 290 forms a conductive contact to the copper interconnects 230 at the bottom of the via 260 through only adiffusion barrier layer 280. In another embodiment, thegold pad 290 overlaying thediffusion barrier layer 280 has a bigger cross-section dimension than that of thevia 260. In yet another embodiment, thegold pad 290 has an extended portion vertically above the surface of thedielectric layer 250 with a certain height. The extended portion of thegold pad 290 is re-shaped to form a gold bump. The gold bump can be used to form a conductive contact with a substrate through a flip chip gold bumping process. - As discussed above and further emphasized here,
FIG. 2 is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. For example, gold material has been shown to be used in the pad for flip chip bumping contact with a substrate. But there can be many alternatives for the pad material. In one embodiment, the pad material can be copper, nickel, or silver. In another example, the substrate to which the integrated circuits with one or more copper interconnects are conductively contacted through the flip chip bumping process can be, but not limited to, a PCB board, an interposer, or a glass substrate. -
FIG. 3 is a simplified method for making an integrated circuit system with one or more copper interconnects according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. Themethod 300 includes aprocess 310 for depositing and patterning a dielectric layer, aprocess 320 for forming copper interconnects, aprocess 330 for depositing and patterning another dielectric layer, aprocess 340 for forming a diffusion barrier layer, aprocess 350 for resist coating and patterning, aprocess 360 for gold plating, aprocess 370 for resist stripping, etching, and annealing, and aprocess 380 for forming conductive contact with substrate. Further details of these processes are found throughout the present specification and more particularly below. - At the
process 310, a dielectric layer is deposited on top of a nitride layer and patterned.FIG. 4A is a simplified diagram showing theprocess 310 for depositing and patterning a dielectric layer for forming conductive bumping with copper interconnection according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. Adielectric layer 210 is deposited on top of anitride layer 205 and patterned. - For example, the
dielectric layer 210 is a dielectric material with low dielectric constant (k). In one embodiment, the low-k dielectric is fluorinated silica glass (FSG). In another embodiment, the low-k dielectric is carbonized silicon dioxide. The deposition of thedielectric layer 210 can be performed by various techniques. For example, the dielectric layer is formed by a chemical vapor deposition process and/or a sputtering process. In another example, the chemical vapor deposition process is selected from plasma-assisted chemical vapor deposition and low-pressure chemical vapor deposition. - The patterning of the
dielectric layer 210 is accomplished by using a photoresist layer according to an embodiment of the present invention. For example, the photoresist layer is deposited and then exposed with a photolithography mask. In one embodiment, the photoresist layer is a positive resist. In another embodiment, the photoresist is a negative resist. The patterning of thedielectric layer 210 is further performed by etching and resist stripping. The etching and the resist stripping lead to the formation of one ormore vias 220 on thedielectric layer 210 through the thickness of the dielectric layer. Thevias 220, depending on the patterning process based on the circuit design requirement, can be of various shapes or dimensions. For example, the diameter of the via 220 can be the same or different over the depth of the via 220 or can have steps. - At the
process 320, the copper interconnects are formed in vias created by theprocess 310. The simplified diagram inFIG. 4A also shows theprocess 320 for forming copper interconnects according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. For example, formingcopper interconnect 230 in via 220 is implemented in thedevice 200. - A
metal barrier layer 225 is deposited to coat the surface of thevias 220. In one embodiment, thebarrier layer 225 is TaN. On themetal barrier layer 225, the copper material is deposited to at least partially fill thevias 220. The deposition of the copper material can be performed by various techniques. For example, the copper material is added by a chemical vapor deposition process and/or a sputtering process. - After copper materials at least partially fills the
vias 220, the copper interconnects 230 for the integrated circuits are formed. For example, the formation of the copper interconnects 230 is assisted by photo-lithography processes. Subsequently, the top copper interconnects are processed for bond pad patterning. For example, the bond pad patterning are processed automatically by copper CMP without an additional mask. As shown inFIG. 4A , according to an embodiment, theprocess 320 yields a surface including atop copper interconnect 230 that will be used for bond pad and those not for bond pads. - At the
process 330, a dielectric layer is deposited on top of the surface prepared inprocess 320 and then patterned.FIG. 4B is a simplified diagram showing a method for depositing and patterning a second dielectric layer for forming conductive bumping with copper interconnection according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. - Referring to
FIG. 4B , in one embodiment of the present invention, thedielectric layer 250 includes twosub-layers - The
dielectric layer 250 is then patterned by using a photoresist layer according to an embodiment of the present invention. For example, the photoresist layer is deposited and then exposed with a photolithography mask applied. The resist in the exposed region is washed out to form an opening that reveals a surface region of thedielectric layer 250. The resist layer opening is designed to center-align with the copper interconnects 230 to be used for bond pads. In one embodiment, the photoresist layer is a positive resist. In another embodiment, the photoresist is a negative resist. - Referring to
FIG. 4B , according to an embodiment of the present invention, dielectric material is etched from the surface region of thedielectric layer 250 revealed by the resist layer opening. For example, the dry etching is performed to remove thedielectric layer 250. In one embodiment, the etching is highly anisotropic so that material ofdielectric layer 250 is removed vertically much faster than laterally. In another embodiment, the etching is performed through the whole thickness of thedielectric layer 250 then is stopped at the top surface of the copper interconnects 230 by a pre-applied etch-stop layer. After removing the debris of the resist layer, a via 260 is formed in thedielectric layer 250. For example, by controlling the resist layer patterning and etching process parameters, the just formed via 260 is located on the copper interconnects 230 to be used for bond pads. The via 260 has a depth equal to the thickness of thedielectric layer 250 and a cross-section dimension equal to or bigger than that of the copper interconnects 230. - At the
process 340, a metal diffusion barrier layer is formed.FIG. 4C is a simplified diagram showing a method for forming a diffusion barrier layer for forming conductive bumping with copper interconnection according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. - As shown in
FIG. 4C , thediffusion barrier layer 280 overlays the whole surface including the bottom surface of the via 260, the side surface within the via 260, and the top surface of thedielectric layer 250. The deposition of thediffusion barrier layer 280, according to one embodiment of the present invention, can be performed by PVD. According to certain embodiments of the invention, thediffusion barrier layer 280 may be at least one material layer selected from a group consisting of Ta, TaN, TaN/Ta, TiN, TiSiN, W, TiW, and WN. In yet another embodiment, thediffusion barrier layer 280 includes a gold seed layer. The deposition of thediffusion barrier layer 280 can be also performed by various techniques. For example, thediffusion barrier layer 280 is formed by a chemical vapor deposition process and/or atomic layer deposition. - At the
process 350, a resist layer is coated and patterned.FIG. 4D is a simplified diagram showing a method for coating and patterning resist layer for forming conductive bumping with copper interconnection according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. - Referring to
FIG. 4D , a photoresist layer 285 is coated on top of thediffusion barrier layer 280. For example, the resist layer 285 is patterned by exposure through a photolithography mask pre-aligned with the via 260. After developing the resist layer 285 and removing the portions that were exposed, an opening of the resist layer 285 is formed to locate right over thevia 260. The shape of the opening is similar to that of via 260 and the lateral dimension can be bigger so that the sidewall of the resist opening is outside the rim of via 260. In one embodiment, the photoresist layer 285 is a positive resist. In another embodiment, the photoresist 285 is a negative resist. The resist opening plus the via 260 create a cavity for forming the bumping pad in later process. In yet another embodiment, the thickness of the resist layer 285 is pre-determined to ensure the bumping pad to be formed has a desired height above via 260. - At the
process 360, gold plating is performed.FIG. 4E is a simplified diagram showing a method for gold plating for forming conductive bumping with copper interconnection according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. - Referring to
FIG. 4E , to form a bumping pad conductively connect copper interconnects, gold material is deposited to fill the cavity created atprocess 350 from the bottom of the via 260 up to the surface of the resist layer 285. In one example, gold material is deposited by an electroplating technique. In another example, prior to the gold plating a low-power oxygen plasma ash is applied to remove potential residue of the resist in the areas to be plated. According to certain embodiments of the present invention, although gold material is shown to be used for forming the bumping pad, there can be many alternatives for the pad material. For example, the pad material may be selected from a group consisting of copper, nickel, gold, and silver. In another embodiment, the electroplating technique can be replaced by PVD or CVD. Referring toFIG. 4E , according to an embodiment of the present invention, the gold material in the via 260 is conductively connected withcopper interconnects 230 at the bottom of via 260 through adiffusion barrier 280. - At the
process 370, the resist layer is stripped. Additionally, thediffusion barrier layer 280 outside the rim of via 260 that is not covered by thegold material 290 is etched away.FIG. 4F is a simplified diagram showing a method for resist stripping and metal etching for forming conductive bumping with copper interconnection according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. - For example, the resist layer 285 (shown in
FIG. 4E ) on top of the metaldiffusion barrier layer 280 is stripped by organic stripping employing organic strippers. The organic stripper in one example can be phenol-based organic stripper. In another example, the organic stripper can be low-phenol or phenol-free organic stripper. An 02 plasma stripping process may be followed. - At the
process 370, thediffusion barrier layer 280 outside the rim of via 260 that is not covered by the gold material is etched away. The etching of thediffusion barrier layer 280 can be performed by various techniques. In one embodiment, the etching of thediffusion barrier layer 280 is accomplished by reactive ion etching which uses both physical sputtering and chemically reactive species to remove the metal layers. In one example, if gold seed layer was deposited before the diffusion barrier layer deposition, this gold seed layer can be removed by reverse plating. In another example, a dilute gold wet etch chemistry is applied to remove gold particles. In another embodiment, the etching of thediffusion barrier layer 280 can be performed with plasma etching. In one example, the plasma etch is performed in a residue-free etching process. - After the etching process to remove the
diffusion barrier layer 280 that is not covered by the gold material, the underlying surface of thedielectric layer 250 is revealed. Referring toFIG. 4F , according to an embodiment of the present invention, up to this sage of theprocess 370 an initial form of agold pad 290 with a certain height above adielectric layer 250 is formed. Thegold pad 290 is in contact with thediffusion barrier layer 280 at the bottom and all sidewalls of the via 260 including a portion outside the rim of thevia 260. - At the
process 370, thermal annealing is performed to the integrated circuit system, including the just formedgold pad 290 in its initial form. In one example, the thermal annealing is performed by a remote plasma activated process at the relativelylow temperature 200° C. to 600° C. Through the mass transportation the annealing process at least partially reshapes thegold pad 290 above the surface of thedielectric layer 250, making it ready for conductive bumping process. - At
process 380, conductive bumping contact with a substrate is formed.FIG. 4G is a simplified diagram showing a process for forming conductive bumping with copper interconnection according to an embodiment of the present invention. This diagram is merely an example, which should not unduly limit the scope of the claims. One of ordinary skill in the art would recognize many variations, alternatives, and modifications. For example, the conductive bump used in the process is made from thegold pad 290 formed at the end of theprocess 370. - Referring to
FIG. 4G , according to an embodiment of the present invention, anintegrated circuit system 200 with one or more copper interconnects including one or moreconductive bumps 295 is formed. Asubstrate 400 is provided. The flip chip bumping process is then performed to create one or more conductive contacts between the substrate and theintegrated circuit system 200 with one or more copper interconnects through one or moreconductive bumps 295. In one embodiment, the conductive bumps are made from thegold pad 290 formed at theprocess 370. In another embodiment, the bumping process is a lead free gold bumping process. According to certain embodiments of the present invention, thesubstrate 400 may be various types. For example, thesubstrate 400 can be a PCB board. In another example, thesubstrate 400 is an interposer or a glass substrate. In another embodiment of the invention, the substrate material can be organic or ceramic. - Many benefits are achieved by way of the present invention over conventional techniques. For example, in lead free flip chip gold bumping process, the present technique provides an replacement of the aluminum wire bonding by gold bumping. In another example, the present technique provides a full copper interconnection for the gold bumping process without aluminum material for the whole process. Some embodiments of the present invention provide an integrated circuit system with one or more copper interconnects without aluminum material. Certain embodiments of the present invention provide a process that is compatible with conventional process technology. Moreover, the process does not require an additional mask for patterning the copper bond pad. Some embodiments of the present invention utilize copper CMP process to automatically patterning the copper bond pad. Certain embodiments of the present invention reduce the possibility of the cross contamination between aluminum and copper. Some embodiments of the present invention improve the speed of the whole chip.
- It is also understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application and scope of the appended claims.
Claims (19)
Priority Applications (2)
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Also Published As
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US20120088363A1 (en) | 2012-04-12 |
US8053907B2 (en) | 2011-11-08 |
US8581366B2 (en) | 2013-11-12 |
US8293635B2 (en) | 2012-10-23 |
CN101630667A (en) | 2010-01-20 |
US20130029483A1 (en) | 2013-01-31 |
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