US20100320559A1 - Semiconductor device including independent active layers and method for fabricating the same - Google Patents
Semiconductor device including independent active layers and method for fabricating the same Download PDFInfo
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- US20100320559A1 US20100320559A1 US12/853,700 US85370010A US2010320559A1 US 20100320559 A1 US20100320559 A1 US 20100320559A1 US 85370010 A US85370010 A US 85370010A US 2010320559 A1 US2010320559 A1 US 2010320559A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 257
- 238000000034 method Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 150000004767 nitrides Chemical class 0.000 claims abstract description 34
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 238000002955 isolation Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052710 silicon Inorganic materials 0.000 abstract description 20
- 239000010703 silicon Substances 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 148
- 238000001459 lithography Methods 0.000 description 14
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- 230000004888 barrier function Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced from each other and doped with a p-type impurity. A first HFET including a first active layer and a second HFET including a second active layer both made of a group III-V nitride semiconductor are independently formed on the respective polarity inversion regions in the semiconductor substrate, and the HFETs are electrically connected to each other through interconnects.
Description
- This application claims priority under 35 U.S.C. §119 on Patent Application Nos. 2004-359447 and 2005-316247 filed in Japan respectively on Dec. 13, 2004 and Oct. 31, 2005, the entire contents of which are hereby incorporated by reference.
- The present invention relates to a semiconductor device and a method for fabricating the same, and more particularly it relates to a semiconductor device including a plurality of high power elements using a group III-V nitride semiconductor.
- A group III-V nitride semiconductor is a compound semiconductor of a compound composed of aluminum (Al), boron (B), gallium (Ga) or indium (In) and nitride (N) represented by a general formula of BwAlxGayInzN (wherein w+x+y+z=1 and 0≦w, x, y, z≦1).
- A group III-V nitride semiconductor has various advantages such as a large band gap, a high breakdown voltage derived from the large band gap, a high electron saturation velocity and high electron mobility, and a high electron concentration attained in forming a heterojunction, and therefore, various examinations and developments are now being made on application to a short-wavelength light emitting device, a high power high-frequency device, a high-frequency low-noise amplifier device, a high power switching device and the like.
- Conventionally, such devices are developed as simplex devices for attaining performances that are realized by utilizing good material characteristics (physical properties) of a group III-V nitride semiconductor itself but cannot be realized by using other materials.
-
FIG. 11 is a cross-sectional view of a conventional group III-V nitride semiconductor device using a heterojunction (see, for example, Japanese Patent Publication No. 2996169 or 3409958). As shown inFIG. 11 , the conventional group III-V nitride semiconductor device includes anoperation layer 102 of gallium nitride (GaN) and abarrier layer 103 of aluminum gallium nitride (AlGaN) successively stacked on asemiconductor substrate 101 with a conducting property, and a heterojunction is formed on an interface between theoperation layer 102 and thebarrier layer 103 having different band gaps. - The
barrier layer 103 is partitioned by aninsulating isolation region 104 reaching an upper portion of theoperation layer 102, a Schottkygate electrode 105 is formed on thepartitioned barrier layer 103, and anohmic source electrode 106 and anohmic drain electrode 107 are formed on both sides of thegate electrode 105 along the gate length direction. Thus, the semiconductor device is operated as a heterojunction field effect transistor (hereinafter referred to as the HFET). - In the vicinity of the interface in the
operation layer 102 of the heterojunction between theoperation layer 102 and thebarrier layer 103, electrons derived from a difference in spontaneous polarization and piezo-electric polarization between theoperation layer 102 and thebarrier layer 103, an n-type impurity doped in thebarrier layer 103 and other uncontrollable defects caused in theoperation layer 102 and thebarrier layer 103 are accumulated in a high concentration so as to form a two-dimensional electron gas (2DEG), and the thus formed 2DEG works as a channel carrier of the field effect transistor. - The
source electrode 106 is electrically connected to thesemiconductor substrate 101 set to ground potential through a surface viainterconnect 108, so as to reduce a parasitic component in a high-frequency or high-speed switching operation. Also, thesemiconductor substrate 101 set to the ground potential functions also as a field plate (field releasing plate), and therefore, it exhibits an effect to release concentration of the electric field in a device active region, and particularly at an end of thegate electrode 105 closer to thedrain electrode 107. - In the conventional group III-V nitride semiconductor device, however, current leakage is caused through the
semiconductor substrate 101 in a high voltage operation, and therefore, it is difficult to electrically connecting or integrating a plurality of elements (HFETs) formed on onesemiconductor substrate 101. - The present invention was devised for overcoming the aforementioned conventional problem, and an object of the invention is integrating a plurality of elements made of a group III-V nitride semiconductor on a semiconductor substrate with a conducting property.
- In order to achieve the object, in the semiconductor device according to the invention, a plurality of semiconductor elements each having an active layer made of a group III-V nitride semiconductor are formed on polarity inversion regions with a polarity different from the conductivity type of a semiconductor substrate or on a semiconductor substrate having a buried insulating layer.
- The first semiconductor device of this invention includes a semiconductor substrate of a first conductivity type having, in an upper portion thereof, a plurality of polarity inversion regions spaced from one another and formed by introducing an impurity of a second conductivity type; a plurality of semiconductor elements selectively formed respectively on the polarity inversion regions and respectively including independent active layers made of a group III-V nitride semiconductor; and interconnects for electrically connecting the semiconductor elements to one another.
- In the first semiconductor device, semiconductor elements are electrically insulated from each other even within the semiconductor substrate owing to a depletion layer formed by a pn junction between each polarity inversion region and the semiconductor substrate. Therefore, even when the respective semiconductor elements are electrically connected to one another through interconnects and operated at a high voltage, a leakage current caused between the semiconductor elements through the semiconductor substrate can be suppressed to be very small. Accordingly, a semiconductor device including a plurality of semiconductor elements respectively having independent active layers made of a group III-V nitride semiconductor and electrically connected to one another can be integrated on a semiconductor substrate with a conducting property.
- In the first semiconductor device, each of the semiconductor elements preferably has at least one terminal, and at least one of the semiconductor elements is preferably electrically connected to the semiconductor substrate at the terminal. Thus, the semiconductor substrate connected to one terminal of the semiconductor element functions as a field plate for releasing the electric field, and therefore, a higher breakdown voltage can be attained. Furthermore, since the semiconductor substrate has the same potential with respect to the plural semiconductor elements, if the semiconductor substrate is connected to a terminal for supplying common potential to the semiconductor elements, such as ground potential, a ground interconnect can be reduced.
- In the first semiconductor device, preferably, the first conductivity type is p-type, the second conductivity type is n-type, and the III-V group nitride semiconductor includes an n-type layer. Accordingly, the positive source voltage applied at operation of the active layer made of the n-type III-V group nitride semiconductor forms a depletion layer at the interface of the p-n junction between each p-type polarity inversion region and the n-type active layer, thereby realizing higher breakdown voltage and smaller leakage current.
- In the first semiconductor device, a concentration of the impurity in each of the polarity inversion regions is preferably lower in a peripheral portion thereof than in an inner portion thereof on a principal face of the semiconductor substrate. Thus, a breakdown voltage between the polarity inversion region and another region becomes higher, and hence, the semiconductor device can be operated at a higher voltage.
- The first semiconductor device preferably further includes insulating isolation regions formed in the semiconductor substrate between the polarity inversion regions. Thus, a breakdown voltage between the polarity inversion region and another region becomes higher, the semiconductor device can be operated at a higher voltage.
- In the first semiconductor device, a mark for identifying a position of each of the polarity inversion regions is preferably formed in the semiconductor substrate. Thus, after forming the semiconductor layer including the active layers made of the group III-V nitride semiconductor, alignment between the semiconductor layer and each polarity inversion region is eased.
- In this case, the mark is preferably exposed on the semiconductor substrate.
- The first method for fabricating a semiconductor device of this invention includes the steps of forming, in an upper portion of a semiconductor substrate of a first conductivity type, a plurality of polarity inversion regions spaced from one another by selectively introducing a first impurity of a second conductivity type into the semiconductor substrate; forming a semiconductor layer made of a group III-V nitride over the semiconductor substrate including the polarity inversion regions; forming insulating isolation regions extending from the semiconductor layer to the semiconductor substrate by selectively introducing a second impurity into portions of the semiconductor layer and the semiconductor substrate disposed around the polarity inversion regions, whereby respectively forming, on the polarity inversion regions, a plurality of element forming regions each including an active layer in the semiconductor layer; forming a plurality of semiconductor elements by forming electrodes on the element forming regions; and forming interconnects for electrically connecting the semiconductor elements to one another on the plurality of semiconductor elements.
- In the first method for fabricating a semiconductor device, semiconductor elements are electrically insulated from each other even within the semiconductor substrate owing to a depletion layer formed by a pn junction between each polarity inversion region and the semiconductor substrate. Therefore, even when the respective semiconductor elements are electrically connected to one another through interconnects and operated at a high voltage, a leakage current caused between the semiconductor elements through the semiconductor substrate can be suppressed to be very small.
- The first method for fabricating a semiconductor device preferably further includes, before the step of forming a semiconductor layer made of a group III-V nitride, a step of forming, in the semiconductor substrate, a mark for identifying a position of each of the polarity inversion regions, and the mark is preferably used for identifying the position of each of the polarity inversion regions in the semiconductor substrate in selectively forming the isolation regions between the polarity inversion regions in forming the plurality of element forming regions. Thus, after forming the semiconductor layer including the active layers made of the group III-V nitride semiconductor, alignment between each element forming region of the semiconductor layer and each polarity inversion region is eased.
- The second semiconductor device of the invention includes a semiconductor substrate having buried insulating layers formed, from a principal face thereof toward an inner portion thereof, to be spaced from one another; a plurality of semiconductor elements formed to be spaced from one another on the semiconductor substrate and respectively including independent active layers made of a group III-V nitride semiconductor; and interconnects for electrically connecting the semiconductor elements to one another.
- In the second semiconductor device, even semiconductor elements are electrically connected to each other as an integrated circuit on a semiconductor substrate having a buried insulating layer, a high voltage operation can be performed.
- In the second semiconductor device, each of the semiconductor elements preferably has at least one terminal, and at least one of the semiconductor elements is preferably electrically connected to a portion above the buried insulating layer of the semiconductor substrate at the terminal. Thus, the semiconductor layer disposed above the buried insulating layer attains the same potential as the terminal of the semiconductor element so as to function as a field plate, and therefore, even when the semiconductor elements are electrically connected to one another, the semiconductor device can be operated at a higher voltage.
- In the second semiconductor device, wherein each of the semiconductor elements preferably has at least one terminal, and at least one of the semiconductor elements is preferably electrically connected to a portion underneath the buried insulating layer of the semiconductor substrate at the terminal. Thus, potential of the semiconductor layer disposed below the buried insulating layer of the semiconductor substrate can be the same, and therefore, interconnect resistance can be reduced. In addition, since the semiconductor layer disposed below the buried insulating layer functions as a field plate, even when the semiconductor elements are electrically connected to one another, the semiconductor device can be operated at a higher voltage.
- The second semiconductor device preferably further includes an insulating isolation region formed in the semiconductor substrate around the semiconductor elements. Thus, the breakdown voltage between the semiconductor elements can be increased, and hence, the semiconductor device can be operated at a higher voltage.
- The second method for fabricating a semiconductor device of this invention includes the steps of forming a semiconductor layer made of a group III-V nitride on a conducting semiconductor substrate that includes buried insulating layers formed, from a principal face thereof toward an inner portion thereof, to be spaced from one another; forming insulating isolation regions extending to the buried insulating layers by selectively introducing an impurity into the semiconductor layer and the semiconductor substrate, whereby forming, on the semiconductor substrate, a plurality of element forming regions each including an active layer in the semiconductor layer; forming a plurality of semiconductor elements by forming electrodes on the element forming regions; and forming interconnects for electrically connecting the semiconductor elements to one another on the plurality of semiconductor elements.
- In the second method for fabricating a semiconductor device, a plurality of element forming regions each including an active layer made of a group III-V nitride in the semiconductor layer are independently formed by forming a plurality of insulating isolation regions reaching the buried insulating layers. Therefore, even when the respective semiconductor elements are electrically connected to one another as an integrated circuit, a high voltage operation can be performed.
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FIGS. 1A and 1B are diagrams of a semiconductor device according toEmbodiment 1 of the invention, whereinFIG. 1A is a plan view thereof andFIG. 1B is a cross-sectional view thereof taken along line Ib-Ib ofFIG. 1A ; -
FIG. 2 is an enlarged cross-sectional view for showing the structure of an active layer of the semiconductor device ofEmbodiment 1; -
FIG. 3 is a characteristic diagram for showing the relationship between an applied voltage and a leakage current between elements of the semiconductor device ofEmbodiment 1 compared with that of a conventional semiconductor device; -
FIGS. 4A , 4B and 4C are cross-sectional views for showing procedures in a method for fabricating the semiconductor device ofEmbodiment 1; -
FIGS. 5A , 5B and 5C are cross-sectional views for showing other procedures in the method for fabricating the semiconductor device ofEmbodiment 1; -
FIGS. 6A and 6B are cross-sectional views for showing other procedures in the method for fabricating the semiconductor device ofEmbodiment 1; -
FIG. 7 is a cross-sectional view of a semiconductor device according to Embodiment 2 of the invention; -
FIG. 8 is a characteristic diagram for showing the relationship between an applied voltage and a leakage current between elements of the semiconductor device of Embodiment 2 compared with that of a conventional semiconductor device; -
FIGS. 9A , 9B and 9C are cross-sectional views for showing procedures in a method for fabricating the semiconductor device of Embodiment 2; -
FIGS. 10A , 10B and 10C are cross-sectional views for showing other procedures in the method for fabricating the semiconductor device of Embodiment 2; and -
FIG. 11 is a cross-sectional view of a conventional semiconductor device (HFET) using a group III-V nitride semiconductor. -
Embodiment 1 of the invention will now be described with reference to the accompanying drawings. -
FIGS. 1A and 1B show a semiconductor device ofEmbodiment 1 in which two high power HFETs are integrated, and specifically,FIG. 1A is a plan view thereof andFIG. 1B is a cross-sectional view thereof taken on line Ib-Ib ofFIG. 1A . - As shown in
FIG. 1B , a firstpolarity inversion region 12A and a secondpolarity inversion region 12B both of p-type conductivity spaced from each other are selectively formed in an upper portion of asemiconductor substrate 11 of, for example, n-type silicon (Si). The bottoms and the side faces of thepolarity inversion regions concentration impurity region 13 including a p-type impurity in a lower concentration than in thepolarity inversion regions concentration impurity region 13 is thus provided, a larger depletion layer extends in thesemiconductor substrate 11 when a high voltage is applied to the semiconductor device, and hence, the breakdown voltage is increased by approximately 20% as compared with the case where the polarity inversion regions alone are provided. - As shown in
FIGS. 1A and 1B , a firstactive layer 14A and a secondactive layer 14B in each of which a plurality of group III-V nitride semiconductor layers are stacked are formed respectively on the firstpolarity inversion region 12A and the secondpolarity inversion region 12B on the principal face of thesemiconductor substrate 11. - At this point, the detailed structure of the first
active layer 14A and the secondactive layer 14B is shown inFIG. 2 . Each of theactive layers initial buffer layer 141 of aluminum nitride (AlN) with a thickness of approximately 50 nm, a superlattice layer composed of fifteen gallium nitride (GaN) layers 142 and fifteen aluminum nitride (AlN) layers 143 each having a thickness of 25 nm and alternately stacked, and achannel layer 144 with a thickness of 1 μm, which are successively epitaxially grown from the substrate side. In this case, the superlattice layer guarantees a high breakdown voltage peculiar to GaN-based materials. - As shown in
FIGS. 1A and 1B , afirst gate electrode 15A, afirst source electrode 16A and afirst drain electrode 17A provided on the both sides of and spaced from thefirst gate electrode 15A are formed on the firstactive layer 14A, and asecond gate electrode 15B, asecond source electrode 16B and asecond drain electrode 17B provided on the both sides of and spaced from thesecond gate electrode 15B are formed on the secondactive layer 14B. In this manner, afirst HFET 10A including the firstactive layer 14A and asecond HFET 10B including the secondactive layer 14B are constructed on thesemiconductor substrate 11. In this embodiment, thefirst drain electrode 17A of thefirst HFET 10A and thesecond drain electrode 17B of thesecond HFET 10B are adjacent to each other. - An insulating
isolation region 18 is formed around theHFETs isolation region 18 is placed at a level equivalent to the bottoms of the firstactive layer 14A and the secondactive layer 14B, and theHFETs semiconductor substrate 11. - An interlayer insulating
film 20 of silicon nitride (Si3N4) with a thickness of, for example, 300 nm is formed on theisolation region 18 over the whole top face including theHFETs first contact 21A penetrating through theinterlayer insulating film 20 and theisolation region 18 to be connected to thesemiconductor substrate 11 is formed in a portion of theinterlayer insulating film 20 on a side of thefirst source electrode 16A. Also, asecond contact 21B penetrating through theinterlayer insulating film 20 and theisolation region 18 to be connected to thesemiconductor substrate 11 is formed in a portion of theinterlayer insulating film 20 on a side of thesecond source electrode 16B. -
Interconnects 22 respectively for connecting thefirst contact 21A and thefirst source electrode 16A to each other, for connecting thefirst drain electrode 17A and thesecond gate electrode 15B to each other, for connecting thesecond contact 21B and thesecond source electrode 16B to each other, etc. are formed on theinterlayer insulating film 20. -
FIG. 3 shows comparison of a leakage current caused between elements in the semiconductor device ofEmbodiment 1 and a conventional semiconductor device. In the semiconductor device of this embodiment, the leakage current is smaller by two or more figures than in the conventional semiconductor device under application of a high voltage of 300 V or more. Thus, a high breakdown voltage is realized in the present semiconductor device. - Now, a method for fabricating the semiconductor device having the aforementioned architecture will be described with reference to the accompanying drawings.
-
FIGS. 4A through 4C , 5A through 5C, 6A and 6B are cross-sectional views for showing procedures in the method for fabricating the semiconductor device ofEmbodiment 1. - First, as shown in
FIG. 4A , a first resist film is applied on asemiconductor substrate 11 of n-type silicon, and thereafter, the first resist film is formed, by lithography, into a first resistpattern 61 having openings in a plurality of regions where p-type low concentration impurity regions are to be formed. Subsequently, by using the first resistpattern 61 as a mask, first ion beams 71 including boron (B) are ion implanted at acceleration energy of 50 keV and a dose of 1×1012 cm−2, thereby forming a plurality of p-typelow concentration regions 13 in an upper portion of thesemiconductor substrate 11. - Next, as shown in
FIG. 4B , after removing the first resistpattern 61, a second resist film is applied on the principal face of thesemiconductor substrate 11. Subsequently, the second resist film is formed, by the lithography, into a second resistpattern 62 having openings in regions between the p-type lowconcentration impurity regions 13 on the principal face of thesemiconductor substrate 11 where polarity inversion regions are to be formed. Thereafter, by using the second resistpattern 62 as a mask, second ion beams 72 including boron (B) are ion implanted at acceleration energy of 50 keV and a dose of 1×1013 cm−2, thereby forming a firstpolarity inversion region 12A and a secondpolarity inversion region 12B both of the p-type conductivity within the respective p-type lowconcentration impurity regions 13 in thesemiconductor substrate 11. - Then, as shown in
FIG. 4C , after removing the second resistpattern 62, aconcave mark 11 a to be used as an alignment identifying mark in a subsequent exposure step of forming an active layer (element forming region) made of a GaN-based semiconductor layer is formed, by dry etching using an etching gas including chlorine (Cl2) as a principal component, in a region on the principal face of thesemiconductor substrate 11 where neither thepolarity inversion regions concentration impurity regions 13 are formed. At this point, regions on the principal face of the substrate excluding the region where themark 11 a is to be formed are protected by covering with a third resist film (not shown) with a thickness of 2 through 3 μm. - Next, as shown in
FIG. 5A , by using the third resist mask as a mask, aprotection film 63 of silicon oxide is deposited by chemical vapor deposition (CVD) so as to fill themark 11 a and to attain a thickness of approximately 2 μm on themark 11 a. Subsequently, after removing the third resist film, asemiconductor layer 14 of a group III-V nitride is epitaxially grown by metal organic chemical vapor deposition (MOCVD) on thesemiconductor substrate 11 including thepolarity inversion regions concentration impurity regions 13. - Then, as shown in
FIG. 5B , after aligning a mask by using themark 11 a, third ion beams 73 including boron (B) are selectively ion implanted at acceleration energy of 500 keV and a dose of 1×1014 cm−2 into portions of thesemiconductor layer 14 sandwiched between the p-type lowconcentration impurity regions 13 in thesemiconductor substrate 11, thereby forming insulatingisolation regions 18 in the portions of thesemiconductor layer 14 sandwiched between the p-type lowconcentration impurity regions 13. Thus, a firstactive layer 14A and a secondactive layer 14B both made of the group III-V nitride are independently formed from thesemiconductor layer 14 respectively on thepolarity inversion regions mark 11 a is not shown inFIG. 5B . - Next, as shown in
FIG. 5C , a fourth resist pattern (not shown) having openings in regions where source electrodes and drain electrodes are to be formed is formed on theactive layers isolation regions 18 by the lithography. Thereafter, by using the fourth resist pattern as a mask, a first metal film of a multilayered body of titanium (Ti) and aluminum (Al) is deposited by, for example, vacuum deposition or sputtering. Then, afirst source electrode 16A and afirst drain electrode 17A, and asecond source electrode 16B and asecond drain electrode 17B all having an ohmic property are formed respectively on the firstactive layer 14A and the secondactive layer 14B by what is called a lift-off method for removing the fourth resist pattern. Subsequently, a fifth resist pattern (not shown) having openings in regions where gate electrodes are to be formed is formed on theactive layers isolation regions 18 by the lithography. Then, by using the fifth resist pattern as a mask, a second metal film of palladium (Pd) is deposited by, for example, the vacuum deposition. Thereafter, afirst gate electrode 15A and asecond gate electrode 15B both having a Schottky property are respectively formed on the firstactive layer 14A and the secondactive layer 14B by the lift-off method for removing the fifth resist pattern. Thus, afirst HFET 10A including the firstactive layer 14A and asecond HFET 10B including the secondactive layer 14B are formed. - Next, as shown in
FIG. 6A , aninterlayer insulating film 20 of silicon nitride (Si3N4) with a thickness of 300 nm is deposited by the CVD so as to cover thefirst HFET 10A and thesecond HFET 10B. Subsequently, openings for exposing contact forming regions and connecting portions for connecting thegate electrodes source electrodes drain electrodes interlayer insulating film 20 by the lithography and the dry etching using an etching gas including fluorocarbon as a principal component. Thereafter, contact holes 18 a for forming substrate contacts of theHFETs isolation regions 18 so as to expose thesemiconductor substrate 11 therein by the lithography and the dry etching using chlorine. - Then, as shown in
FIG. 6B , a sixth resist pattern (not shown) for exposing the contact holes 18 a, one ends of thegate electrodes source electrodes drain electrodes interlayer insulating film 20 by the lithography. Subsequently, by using the sixth resist pattern as a mask, a metal film of titanium (Ti) and gold (Au) for forming interconnects is deposited by a plating method, thereby formingcontacts - It is noted that the
semiconductor substrate 11 may be a p-type semiconductor substrate instead of the n-type substrate. - Embodiment 2 of the invention will now be described with reference to the accompanying drawings.
-
FIG. 7 is a cross-sectional view of a semiconductor device of Embodiment 2 in which two high power HFETs are integrated. The plan structure of this semiconductor device is similar to that ofEmbodiment 1 shown inFIG. 1B . Also, like reference numerals are used inFIG. 7 to refer like elements shown inFIG. 1 and the description is omitted. - In
Embodiment 1, thesemiconductor substrate 11 of n-type silicon is used as the substrate on which the group III-Vnitride semiconductor layer 14 is epitaxially grown. In contrast, an n-type SOI substrate 31 including an n-typeupper silicon layer 30 a, a buriedoxide layer 30 b and an n-typelower silicon layer 30 c is used in Embodiment 2 as shown inFIG. 7 . - Specifically, the
SOI substrate 31 includes the n-typeupper silicon layer 30 a with a thickness of 0.2 μm, the buriedoxide layer 30 b of silicon oxide with a thickness of 100 nm formed under the n-typeupper silicon layer 30 a, and the n-typelower silicon layer 30 c formed under the buriedoxide layer 30 b. - In the
upper silicon layer 30 a, a first p-type lowconcentration impurity region 32A and a second p-type lowconcentration impurity region 32B are formed respectively below afirst HFET 10A and asecond HFET 10B so as to be in contact with the buriedoxide layer 30 b. - In Embodiment 2, an
isolation region 18 reaches the buriedoxide layer 30 b. Thus, theHFETs SOI substrate 31. - Each of a
first contact 21A and asecond contact 21B penetrates through the buriedoxide layer 30 b so as to reach the n-typelower silicon layer 30 c. - It is noted that the lower end of the
isolation region 18 may be placed at a level within the n-typeupper silicon layer 30 a of theSOI substrate 31 so as to allow thecontacts upper silicon layer 30 a. Also in this case, the n-typeupper silicon layer 30 a attains potential equivalent to that ofsource electrodes HFETs HFETs -
FIG. 8 shows comparison of a leakage current caused between elements in the semiconductor device of Embodiment 2 and a conventional semiconductor device. In the semiconductor device of this embodiment, the leakage current is smaller by three or more figures than in the conventional semiconductor device under application of a high voltage of 300 V or more. Thus, a higher breakdown voltage is realized in the present semiconductor device. - Now, a method for fabricating the semiconductor device having the aforementioned architecture will be described with reference to the accompanying drawings.
-
FIGS. 9A through 9C and 10A through 10C are cross-sectional views for showing procedures in the method for fabricating the semiconductor device of Embodiment 2. - First, as shown in
FIG. 9A , a first resist film is applied on an n-typeupper silicon layer 30 a of aSOI substrate 31, and thereafter, the first resist film is formed, by the lithography, into a first resistpattern 61 having openings in a plurality of regions where p-type low concentration impurity regions are to be formed. Subsequently, by using the first resistpattern 61 as a mask, first ion beams 74 including boron (B) are ion implanted at acceleration energy of 50 keV and a dose of 1×1012 cm−2, thereby forming a plurality of p-type low concentration impurity regions 32 in the n-typeupper silicon layer 30 a. Although the p-type low concentration impurity regions 32 are not always necessary, they are preferably provided because the breakdown voltage of the semiconductor device is thus further increased. - Next, as shown in
FIG. 9B , after removing the first resistpattern 61, a second resistpattern 64 having openings for exposing regions on the principal face of theSOI substrate 31 where the p-type lowconcentration impurity regions pattern 64 as a mask, a hole-shapedmark 30 d to be used as an alignment identifying mark in a subsequent exposure step of forming an active layer (element forming region) made of a GaN-based semiconductor layer is formed in the n-typeupper silicon layer 30 a by the dry etching using an etching gas including chlorine as a principal component. - Then, as shown in
FIG. 9C , by using the second resistpattern 64 as a mask, aprotection film 63 of a silicon oxide is deposited by the CVD so as to fill themark 30 d and attain a thickness of approximately 2 μm on themark 30 d. Subsequently, after removing the second resistpattern 64, asemiconductor layer 14 of a group III-V nitride is epitaxially grown by the MOCVD on the n-typeupper silicon layer 30 a of theSOI substrate 31 including the p-type lowconcentration impurity regions - Next, as shown in
FIG. 10A , after aligning a mask by using themark 30 d, second ion beams 75 including boron (B) are selectively ion implanted at acceleration energy of 500 keV and a dose of 1×1014 cm−2 into portions of thesemiconductor layer 14 sandwiched between the p-type lowconcentration impurity regions isolation regions 18 in the portions of thesemiconductor layer 14 sandwiched between the p-type lowconcentration impurity regions active layer 14A and a secondactive layer 14B both made of the group III-V nitride are independently formed from thesemiconductor layer 14 respectively on the p-type lowconcentration impurity regions mark 30 d is not shown inFIG. 10A . - Then, as shown in
FIG. 10B , in the same manner as inEmbodiment 1, afirst source electrode 16A and afirst drain electrode 17A, and asecond source electrode 16B and asecond drain electrode 17B all made of a multilayered body of titanium and aluminum are formed respectively on the firstactive layer 14A and the secondactive layer 14B by the lithography and the lift-off method. Subsequently, afirst gate electrode 15A and asecond gate electrode 15B both of palladium are formed respectively on the firstactive layer 14A and the secondactive layer 14B by the lithography and the lift-off method. Thus, afirst HFET 10A including the firstactive layer 14A and asecond HFET 10B including the secondactive layer 14B are formed. - Next, as shown in
FIG. 10C , aninterlayer insulating film 20 of silicon nitride with a thickness of 300 nm is deposited by the CVD so as to cover thefirst HFET 10A and thesecond HFET 10B. Then, openings for exposing contact forming regions and connecting portions for connecting thegate electrodes source electrodes drain electrodes interlayer insulating film 20 by the lithography and the dry etching using an etching gas including fluorocarbon as a principal component. Thereafter, contact holes 18 a for forming substrate contacts of theHFETs isolation regions 18 by the lithography and the dry etching using chlorine so as to expose the n-typelower silicon layer 30 c of theSOI substrate 31 therein. - Then, the lithography and the plating method are executed for forming a
first contact 21A and asecond contact 21B and for forming, on theinterlayer insulating film 20, interconnects 22 connected to one ends of thegate electrodes source electrodes drain electrodes FIG. 7 is completed. - It is noted that the
SOI substrate 31 including the n-type layers may be replaced with a SOI substrate including p-type upper and lower silicon layers. - Further, in each of
Embodiments 1 and 2 when at least thechannel layer 144 and theGaN layer 142 as the supperlattice layers of the firstactive layer 14A and the secondactive layer 14B are n-type, a depletion layer is formed in the n-type layer within eachactive layer polarity inversion regions semiconductor substrate 11 are p-type, resulting in further reduction of the leakage current. - It is noted that in each of
Embodiments 1 and 2, the supperlattice layers made of theGaN layer 142 and theAlN layer 143 are not necessarily formed in theactive layers polarity inversion regions semiconductor substrate 11 if at least thechannel layer 144 in eachactive region active layer - As described so far, in the semiconductor device and the fabrication method for the same of this invention, a semiconductor device including a plurality of semiconductor elements all of which include independent active layers made of a group III-V nitride semiconductor and are electrically connected to one another can be integrated on a semiconductor substrate with a conducting property, and therefore, the invention is useful for a semiconductor device including high power elements or the like.
Claims (8)
1-7. (canceled)
8. A method for fabricating a semiconductor device comprising the steps of:
forming, in an upper portion of a semiconductor substrate of a first conductivity type, a plurality of polarity inversion regions spaced from one another by selectively introducing a first impurity of a second conductivity type into said semiconductor substrate;
forming a semiconductor layer made of a group III-V nitride over said semiconductor substrate including said polarity inversion regions;
forming insulating isolation regions extending from said semiconductor layer to said semiconductor substrate by selectively introducing a second impurity into portions of said semiconductor layer and said semiconductor substrate disposed around said polarity inversion regions, whereby respectively forming, on said polarity inversion regions, a plurality of element forming regions each including an active layer in said semiconductor layer;
forming a plurality of semiconductor elements by forming electrodes on said element forming regions; and
forming interconnects for electrically connecting said semiconductor elements to one another on said plurality of semiconductor elements.
9. The method for fabricating a semiconductor device of claim 8 , further comprising, before the step of forming a semiconductor layer made of a group III-V nitride, a step of forming, in said semiconductor substrate, a mark for identifying a position of each of said polarity inversion regions,
wherein said mark is used for identifying the position of each of said polarity inversion regions in said semiconductor substrate in selectively forming said isolation regions between said polarity inversion regions in forming said plurality of element forming regions.
10. A semiconductor device comprising:
a semiconductor substrate having buried insulating layers formed, from a principal face thereof toward an inner portion thereof, to be spaced from one another;
a plurality of semiconductor elements formed to be spaced from one another on said semiconductor substrate and respectively including independent active layers made of a group III-V nitride semiconductor; and
interconnects for electrically connecting said semiconductor elements to one another.
11. The semiconductor device of claim 10 ,
wherein each of said semiconductor elements has at least one terminal, and
at least one of said semiconductor elements is electrically connected to a portion above said buried insulating layer of said semiconductor substrate at said terminal.
12. The semiconductor device of claim 10 ,
wherein each of said semiconductor elements has at least one terminal, and
at least one of said semiconductor elements is electrically connected to a portion underneath said buried insulating layer of said semiconductor substrate at said terminal.
13. The semiconductor device of claim 10 , further comprising an insulating isolation region formed in said semiconductor substrate around said semiconductor elements.
14. A method for fabricating a semiconductor device comprising the steps of:
forming a semiconductor layer made of a group III-V nitride on a conducting semiconductor substrate that includes buried insulating layers formed, from a principal face thereof toward an inner portion thereof, to be spaced from one another;
forming insulating isolation regions extending to said buried insulating layers by selectively introducing an impurity into said semiconductor layer and said semiconductor substrate, whereby forming, on said semiconductor substrate, a plurality of element forming regions each including an active layer in said semiconductor layer;
forming a plurality of semiconductor elements by forming electrodes on said element forming regions; and
forming interconnects for electrically connecting said semiconductor elements to one another on said plurality of semiconductor elements.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110143515A1 (en) * | 2007-08-09 | 2011-06-16 | Sony Corporation | Semiconductor device and method of manufacturing the same |
US20130221365A1 (en) * | 2012-02-24 | 2013-08-29 | Raytheon Company | Method For Processing Semiconductors Using A Combination Of Electron Beam And Optical Lithography |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US8502273B2 (en) * | 2010-10-20 | 2013-08-06 | National Semiconductor Corporation | Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same |
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US9455327B2 (en) | 2014-06-06 | 2016-09-27 | Qorvo Us, Inc. | Schottky gated transistor with interfacial layer |
US20160005845A1 (en) * | 2014-07-02 | 2016-01-07 | International Rectifier Corporation | Group III-V Transistor Utilizing a Substrate Having a Dielectrically-Filled Region |
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US9722065B1 (en) | 2016-02-03 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device |
DE112017007491B4 (en) | 2017-04-28 | 2023-04-27 | Mitsubishi Electric Corporation | semiconductor device |
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US11183613B2 (en) | 2017-09-29 | 2021-11-23 | Intel Corporation | Group III-nitride light emitting devices including a polarization junction |
WO2019066914A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | Tunnel polarization junction iii-n transistors |
CN113964179B (en) * | 2021-08-30 | 2023-11-17 | 西安电子科技大学 | Si-based AlGaN/GaN HEMT based on wrapping buried layer and diffusion barrier layer and preparation method |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4893163A (en) * | 1988-03-28 | 1990-01-09 | International Business Machines Corporation | Alignment mark system for electron beam/optical mixed lithography |
US5068756A (en) * | 1989-02-16 | 1991-11-26 | Texas Instruments Incorporated | Integrated circuit composed of group III-V compound field effect and bipolar semiconductors |
US5243207A (en) * | 1991-03-15 | 1993-09-07 | Texas Instruments Incorporated | Method to integrate HBTs and FETs |
US5289015A (en) * | 1991-04-25 | 1994-02-22 | At&T Bell Laboratories | Planar fet-seed integrated circuits |
US5362678A (en) * | 1990-06-05 | 1994-11-08 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing insulated via hole structure for semiconductor device |
US5536953A (en) * | 1994-03-08 | 1996-07-16 | Kobe Steel Usa | Wide bandgap semiconductor device including lightly doped active region |
US5606184A (en) * | 1995-05-04 | 1997-02-25 | Motorola, Inc. | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
US5912479A (en) * | 1996-07-26 | 1999-06-15 | Sony Corporation | Heterojunction bipolar semiconductor device |
US6140690A (en) * | 1996-11-18 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
US6492679B1 (en) * | 2001-08-03 | 2002-12-10 | Semiconductor Components Industries Llc | Method for manufacturing a high voltage MOSFET device with reduced on-resistance |
US20030160265A1 (en) * | 2002-02-28 | 2003-08-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6618418B2 (en) * | 2001-11-15 | 2003-09-09 | Xerox Corporation | Dual III-V nitride laser structure with reduced thermal cross-talk |
US20040041169A1 (en) * | 2002-08-26 | 2004-03-04 | Fan Ren | GaN-type enhancement MOSFET using hetero structure |
US6724019B2 (en) * | 2000-05-25 | 2004-04-20 | Renesas Technology Corporation | Multi-layered, single crystal field effect transistor |
US20040099888A1 (en) * | 2002-11-26 | 2004-05-27 | Saptharishi Sriram | Transistors having buried p-type layers beneath the source region |
US6825559B2 (en) * | 2003-01-02 | 2004-11-30 | Cree, Inc. | Group III nitride based flip-chip intergrated circuit and method for fabricating |
US20060091430A1 (en) * | 2004-10-29 | 2006-05-04 | Saptharishi Sriram | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
US20060226415A1 (en) * | 2004-11-22 | 2006-10-12 | Masaaki Nishijima | Semiconductor integrated circuit device and vehicle-mounted radar system using the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06246471A (en) | 1993-02-26 | 1994-09-06 | Nikon Corp | Laser beam machine |
JP3409958B2 (en) | 1995-12-15 | 2003-05-26 | 株式会社東芝 | Semiconductor light emitting device |
JP2996169B2 (en) | 1996-03-07 | 1999-12-27 | 松下電器産業株式会社 | High frequency semiconductor device and high frequency communication equipment |
-
2005
- 2005-12-13 US US11/299,818 patent/US7800097B2/en active Active
-
2010
- 2010-08-10 US US12/853,700 patent/US20100320559A1/en not_active Abandoned
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4893163A (en) * | 1988-03-28 | 1990-01-09 | International Business Machines Corporation | Alignment mark system for electron beam/optical mixed lithography |
US5068756A (en) * | 1989-02-16 | 1991-11-26 | Texas Instruments Incorporated | Integrated circuit composed of group III-V compound field effect and bipolar semiconductors |
US5362678A (en) * | 1990-06-05 | 1994-11-08 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing insulated via hole structure for semiconductor device |
US5243207A (en) * | 1991-03-15 | 1993-09-07 | Texas Instruments Incorporated | Method to integrate HBTs and FETs |
US5289015A (en) * | 1991-04-25 | 1994-02-22 | At&T Bell Laboratories | Planar fet-seed integrated circuits |
US5536953A (en) * | 1994-03-08 | 1996-07-16 | Kobe Steel Usa | Wide bandgap semiconductor device including lightly doped active region |
US5606184A (en) * | 1995-05-04 | 1997-02-25 | Motorola, Inc. | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
US5912479A (en) * | 1996-07-26 | 1999-06-15 | Sony Corporation | Heterojunction bipolar semiconductor device |
US6140690A (en) * | 1996-11-18 | 2000-10-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
US6724019B2 (en) * | 2000-05-25 | 2004-04-20 | Renesas Technology Corporation | Multi-layered, single crystal field effect transistor |
US6492679B1 (en) * | 2001-08-03 | 2002-12-10 | Semiconductor Components Industries Llc | Method for manufacturing a high voltage MOSFET device with reduced on-resistance |
US6618418B2 (en) * | 2001-11-15 | 2003-09-09 | Xerox Corporation | Dual III-V nitride laser structure with reduced thermal cross-talk |
US20030160265A1 (en) * | 2002-02-28 | 2003-08-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US20040041169A1 (en) * | 2002-08-26 | 2004-03-04 | Fan Ren | GaN-type enhancement MOSFET using hetero structure |
US20040099888A1 (en) * | 2002-11-26 | 2004-05-27 | Saptharishi Sriram | Transistors having buried p-type layers beneath the source region |
US6825559B2 (en) * | 2003-01-02 | 2004-11-30 | Cree, Inc. | Group III nitride based flip-chip intergrated circuit and method for fabricating |
US20060091430A1 (en) * | 2004-10-29 | 2006-05-04 | Saptharishi Sriram | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
US20060226415A1 (en) * | 2004-11-22 | 2006-10-12 | Masaaki Nishijima | Semiconductor integrated circuit device and vehicle-mounted radar system using the same |
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