US20110012165A1 - Light-emitting diode light bar - Google Patents

Light-emitting diode light bar Download PDF

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Publication number
US20110012165A1
US20110012165A1 US12/887,592 US88759210A US2011012165A1 US 20110012165 A1 US20110012165 A1 US 20110012165A1 US 88759210 A US88759210 A US 88759210A US 2011012165 A1 US2011012165 A1 US 2011012165A1
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United States
Prior art keywords
light
lead
emitting diode
electrode
transmitting body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/887,592
Inventor
Chin-Chih Chiang
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Jess Link Products Co Ltd
Original Assignee
Jess Link Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jess Link Products Co Ltd filed Critical Jess Link Products Co Ltd
Priority to US12/887,592 priority Critical patent/US20110012165A1/en
Assigned to JESS-LINK PRODUCTS CO., LTD. reassignment JESS-LINK PRODUCTS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHIANG, CHIN-CHIH
Publication of US20110012165A1 publication Critical patent/US20110012165A1/en
Abandoned legal-status Critical Current

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V31/00—Gas-tight or water-tight arrangements
    • F21V31/04—Provision of filling media
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S4/00—Lighting devices or systems using a string or strip of light sources
    • F21S4/20—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports
    • F21S4/28—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports rigid, e.g. LED bars
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention relates to a light-emitting device, and in particular to a light-emitting diode light bar.
  • LED Light Emitting Diode
  • LED Since Light Emitting Diode (LED) has many advantages such as low electricity consumption, long lifetime, small volume, quick response or the like, it is used in various light-emitting devices to replace the traditional bulbs.
  • the LED can be used in decorative light bars.
  • Taiwan Patent Publication No. 558622 discloses an adhesive light bar and a method for manufacturing the same. According to the disclosure of this patent document, a lower adhesive layer and an upper adhesive layer are used to bind a conductive unit there between. Then, a connecting process is performed, whereby a connecting lead is electrically connected to a light source unit and the conductive unit. Finally, a packaging process is performed, whereby the light source unit and the connecting lead can be covered to form a light bar.
  • the conductive unit is bound between the upper and lower adhesive layers.
  • the upper and lower adhesive layers may be detached from each other due to the bending deformation.
  • the conductive unit bound between these adhesive layers may be loosened and moved, which further results in the breakage of tiny connecting leads.
  • the light source unit is damaged and the aesthetic feeling of the light bar is upset when emitting light is deteriorated.
  • the present Inventor proposes a reasonable and novel structure based on his delicate researches and expert experiments.
  • the present invention is to provide a light-emitting diode light bar that can withstand a large bending deformation.
  • the present invention is to provide a light-emitting diode light bar having a first lead and a second lead that are juxtaposed with a distance. Further, a light-emitting diode crystal having a first electrode and a second electrode is provided. The first electrode is electrically fixed to the first lead. The second electrode is electrically connected to the second lead via a metallic lead. A light-transmitting body is used to package the light-emitting diode crystal and the metallic lead. Finally, an insulating layer covers the first lead and the second lead via a hot pressing process. In this way, a light-emitting diode light bar can be formed.
  • the present invention has advantageous features as follows. Since the insulating layer is formed by means of a hot pressing process so as to cover the first lead and the second lead, the insulating layer can still cover the first lead and the second lead firmly without any displacement even the light-emitting diode light bar is subjected to a large binding deformation. Thus, the breakage of the metallic lead connecting the light-emitting diode crystal and the second lead caused by the displacement of the insulating layer as well as the damage of the light-emitting diode crystal can be prevented. In this way, the aesthetic feeling of the light bar when emitting light can be maintained, so that the practicability of the present invention can be increased.
  • FIG. 1 is a perspective view showing the external appearance of the present invention
  • FIG. 2 is a schematic view showing the first lead, the second lead and the light-emitting diode crystal of the present invention
  • FIG. 3 is a schematic view showing the light-emitting diode crystal being electrically connected to the first lead and the second lead in accordance with the present invention
  • FIG. 4 is a schematic view showing the light-transmitting body of the present invention for sealing the light-emitting diode crystal
  • FIG. 5 is a schematic view showing the insulating layer being thermally pressed on the first lead and the second lead in accordance with the present invention
  • FIG. 6A is a cross-sectional view taken along the line 6 - 6 in FIG. 5 ;
  • FIG. 6B is a cross-sectional view showing a back-lighted surface of the insulating layer covering the light-transmitting body
  • FIG. 6C is a cross-sectional view showing an illuminated surface of the insulating layer covering the light-transmitting body
  • FIG. 6D is a cross-sectional view showing the insulating layer covering the light-transmitting body completely.
  • FIG. 7 is a flow chart showing the steps of the method for manufacturing the present invention.
  • FIG. 1 is a perspective view showing the external appearance of the light-emitting diode light bar of the present invention.
  • the present invention provides a light-emitting diode light bar 1 , which includes a first lead 10 and a second lead 20 .
  • the second lead 20 is separated from the first lead 10 by a distance.
  • a light-emitting diode crystal 30 is disposed on the first lead 10 .
  • the light-emitting diode crystal 30 has a first electrode 31 and a second electrode 32 .
  • the first electrode 31 is electrically fixed to the first lead 10 .
  • the second electrode 32 and the second lead 20 are connected to each other via a metallic lead 40 .
  • the metallic lead 40 can be a golden wire or other alternative metallic wires for wiring.
  • the second electrode 32 is provided with a metallic pad 33 .
  • the metallic lead 40 is electrically connected to the metallic pad 33 and the second lead 20 .
  • a light-transmitting body 50 is used to seal the outside of the light-emitting diode crystal 30 and the metallic lead 40 .
  • the light-transmitting body 50 is made of transparent epoxy resin or other rubber.
  • One side of the light-transmitting body 50 for packaging the light-emitting diode crystal 30 is referred to as an illustrated surface 51 , while the other side is referred to as a back-lighted surface 52 .
  • the first lead 10 and the second lead 20 on both sides of the light-transmitting body 50 are formed with a lead-exposing region 100 respectively.
  • an insulating layer 60 covers the outer surface of the lead-exposing region 100 .
  • the insulating layer 60 is formed by means of a hot pressing process, and is made of plastic materials.
  • the insulating layer 60 further covers the illuminated surface 51 or the back-lighted surface 52 of the light-transmitting body 50 . Also, the insulating layer 60 covers the light-transmitting body 50 completely.
  • FIGS. 2 to 5 show the manufacturing of the light-emitting diode light bar of the present invention.
  • FIG. 7 is a flow chart showing the steps of the method for manufacturing the light-emitting diode light bar of the present invention.
  • a first lead 10 and a second lead 20 that are juxtaposed with a distance are provided (step 81 ).
  • a light-emitting diode crystal 30 is provided (step 82 ).
  • the light-emitting diode crystal 30 has a first electrode 31 and a second electrode 32 .
  • the second electrode 32 is provided with a metallic pad 33 .
  • the first electrode 31 of the light-emitting diode crystal 30 is electrically connected to the first lead 10 (step 83 ).
  • the second electrode 32 of the light-emitting diode crystal 30 is electrically connected to the second lead 20 via a metallic lead 40 (step 84 ).
  • the metallic lead 40 is electrically connected from the metallic pad 33 of the light-emitting diode crystal 30 to the second lead 20 .
  • a light-transmitting body 50 is used to package the light-emitting diode crystal 30 and the metallic lead 40 (step 85 ).
  • the first lead 10 and the second lead 20 on both sides of the light-transmitting body 50 are formed with a lead-exposing region 100 respectively.
  • One side of the light-transmitting body 50 for packaging the light-emitting diode crystal 30 is referred to as an illuminated surface 51 , while the other side is referred to as a back-lighted surface 52 .
  • an insulating layer 60 covers the outer surface of the lead-exposing region 100 (step 86 ).
  • the insulating layer 60 also covers the light-transmitting body 50 in a way as shown in FIGS. 6A to 6D .
  • FIGS. 6A to 6D respectively show the insulating layer 60 not covering the light-transmitting body 50 , the insulating layer 60 covering the back-lighted surface 52 of the light-transmitting body 50 , the insulating layer 60 covering the illuminated surface 51 of the light-transmitting body 50 , and the insulating layer 60 completely covering the light-transmitting body 50 .
  • Either side of the light-transmitting body 50 is provided with a protruding post 53 or rib for assisting the light-transmitting body 50 to be better combined with the insulating layer 60 via the hot pressing process.
  • the metallic lead 40 when a wiring process is performed, the metallic lead 40 will be positioned in a level slightly higher than that of the surface of the light-emitting diode crystal 30 .
  • the height of the light-transmitting body 50 has to be larger than that of the metallic lead 40 , thereby covering the light-emitting diode crystal 30 and the metallic lead 40 completely.

Abstract

In a light-emitting diode light bar of a light-emitting device, a first lead and a second lead are juxtaposed with a distance. A light-emitting diode crystal has a first electrode and a second electrode. Then, the first electrode is electrically fixed to the first lead. The second electrode is electrically connected to the second lead via a metallic lead. A light-transmitting body is used to package the light-emitting diode crystal and the metallic lead. Finally, via a hot pressing process, an insulating layer covers the first lead and the second lead. In this way, a light-emitting diode light bar is formed.

Description

  • This application is a divisional application of U.S. patent application serial No. 12/431,123, filed on Apr. 28, 2009.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a light-emitting device, and in particular to a light-emitting diode light bar.
  • 2. Description of Prior Art
  • Since Light Emitting Diode (LED) has many advantages such as low electricity consumption, long lifetime, small volume, quick response or the like, it is used in various light-emitting devices to replace the traditional bulbs. For example, the LED can be used in decorative light bars.
  • With regard to the patent documents in which a LED is used as a light-emitting element, Taiwan Patent Publication No. 558622 discloses an adhesive light bar and a method for manufacturing the same. According to the disclosure of this patent document, a lower adhesive layer and an upper adhesive layer are used to bind a conductive unit there between. Then, a connecting process is performed, whereby a connecting lead is electrically connected to a light source unit and the conductive unit. Finally, a packaging process is performed, whereby the light source unit and the connecting lead can be covered to form a light bar.
  • However, in the above-mentioned patent document, the conductive unit is bound between the upper and lower adhesive layers. When the light bar is bent substantially, the upper and lower adhesive layers may be detached from each other due to the bending deformation. At this time, the conductive unit bound between these adhesive layers may be loosened and moved, which further results in the breakage of tiny connecting leads. As a result, the light source unit is damaged and the aesthetic feeling of the light bar is upset when emitting light is deteriorated.
  • Therefore, in order to overcome the above problems, the present Inventor proposes a reasonable and novel structure based on his delicate researches and expert experiments.
    • SUMMARY OF THE INVENTION
  • The present invention is to provide a light-emitting diode light bar that can withstand a large bending deformation.
  • The present invention is to provide a light-emitting diode light bar having a first lead and a second lead that are juxtaposed with a distance. Further, a light-emitting diode crystal having a first electrode and a second electrode is provided. The first electrode is electrically fixed to the first lead. The second electrode is electrically connected to the second lead via a metallic lead. A light-transmitting body is used to package the light-emitting diode crystal and the metallic lead. Finally, an insulating layer covers the first lead and the second lead via a hot pressing process. In this way, a light-emitting diode light bar can be formed.
  • In comparison with prior art, the present invention has advantageous features as follows. Since the insulating layer is formed by means of a hot pressing process so as to cover the first lead and the second lead, the insulating layer can still cover the first lead and the second lead firmly without any displacement even the light-emitting diode light bar is subjected to a large binding deformation. Thus, the breakage of the metallic lead connecting the light-emitting diode crystal and the second lead caused by the displacement of the insulating layer as well as the damage of the light-emitting diode crystal can be prevented. In this way, the aesthetic feeling of the light bar when emitting light can be maintained, so that the practicability of the present invention can be increased.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a perspective view showing the external appearance of the present invention;
  • FIG. 2 is a schematic view showing the first lead, the second lead and the light-emitting diode crystal of the present invention;
  • FIG. 3 is a schematic view showing the light-emitting diode crystal being electrically connected to the first lead and the second lead in accordance with the present invention;
  • FIG. 4 is a schematic view showing the light-transmitting body of the present invention for sealing the light-emitting diode crystal;
  • FIG. 5 is a schematic view showing the insulating layer being thermally pressed on the first lead and the second lead in accordance with the present invention;
  • FIG. 6A is a cross-sectional view taken along the line 6-6 in FIG. 5;
  • FIG. 6B is a cross-sectional view showing a back-lighted surface of the insulating layer covering the light-transmitting body;
  • FIG. 6C is a cross-sectional view showing an illuminated surface of the insulating layer covering the light-transmitting body;
  • FIG. 6D is a cross-sectional view showing the insulating layer covering the light-transmitting body completely; and
  • FIG. 7 is a flow chart showing the steps of the method for manufacturing the present invention.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The characteristics and technical contents of the present invention will be explained with reference to the accompanying drawings. However, the drawings are illustrative only but not used to limit the present invention.
  • Please refer to FIG. 1, which is a perspective view showing the external appearance of the light-emitting diode light bar of the present invention. The present invention provides a light-emitting diode light bar 1, which includes a first lead 10 and a second lead 20. The second lead 20 is separated from the first lead 10 by a distance.
  • A light-emitting diode crystal 30 is disposed on the first lead 10. The light-emitting diode crystal 30 has a first electrode 31 and a second electrode 32. The first electrode 31 is electrically fixed to the first lead 10. The second electrode 32 and the second lead 20 are connected to each other via a metallic lead 40. The metallic lead 40 can be a golden wire or other alternative metallic wires for wiring. In the present embodiment, the second electrode 32 is provided with a metallic pad 33. The metallic lead 40 is electrically connected to the metallic pad 33 and the second lead 20.
  • After completing the electrical connection of the light-emitting diode crystal 30, a light-transmitting body 50 is used to seal the outside of the light-emitting diode crystal 30 and the metallic lead 40. The light-transmitting body 50 is made of transparent epoxy resin or other rubber. One side of the light-transmitting body 50 for packaging the light-emitting diode crystal 30 is referred to as an illustrated surface 51, while the other side is referred to as a back-lighted surface 52. The first lead 10 and the second lead 20 on both sides of the light-transmitting body 50 are formed with a lead-exposing region 100 respectively.
  • Finally, an insulating layer 60 covers the outer surface of the lead-exposing region 100. The insulating layer 60 is formed by means of a hot pressing process, and is made of plastic materials. The insulating layer 60 further covers the illuminated surface 51 or the back-lighted surface 52 of the light-transmitting body 50. Also, the insulating layer 60 covers the light-transmitting body 50 completely.
  • Please refer to FIGS. 2 to 5, which show the manufacturing of the light-emitting diode light bar of the present invention. Please also refer to FIG. 7, which is a flow chart showing the steps of the method for manufacturing the light-emitting diode light bar of the present invention. First, as shown in FIG. 2, a first lead 10 and a second lead 20 that are juxtaposed with a distance are provided (step 81). Further, a light-emitting diode crystal 30 is provided (step 82). The light-emitting diode crystal 30 has a first electrode 31 and a second electrode 32. The second electrode 32 is provided with a metallic pad 33.
  • Then, as shown in FIG. 3, the first electrode 31 of the light-emitting diode crystal 30 is electrically connected to the first lead 10 (step 83). The second electrode 32 of the light-emitting diode crystal 30 is electrically connected to the second lead 20 via a metallic lead 40 (step 84). In the present embodiment, the metallic lead 40 is electrically connected from the metallic pad 33 of the light-emitting diode crystal 30 to the second lead 20.
  • Please refer to FIG. 4. A light-transmitting body 50 is used to package the light-emitting diode crystal 30 and the metallic lead 40 (step 85). The first lead 10 and the second lead 20 on both sides of the light-transmitting body 50 are formed with a lead-exposing region 100 respectively. One side of the light-transmitting body 50 for packaging the light-emitting diode crystal 30 is referred to as an illuminated surface 51, while the other side is referred to as a back-lighted surface 52.
  • Please refer to FIG. 5. Via a hot pressing process, an insulating layer 60 covers the outer surface of the lead-exposing region 100 (step 86). The insulating layer 60 also covers the light-transmitting body 50 in a way as shown in FIGS. 6A to 6D. FIGS. 6A to 6D respectively show the insulating layer 60 not covering the light-transmitting body 50, the insulating layer 60 covering the back-lighted surface 52 of the light-transmitting body 50, the insulating layer 60 covering the illuminated surface 51 of the light-transmitting body 50, and the insulating layer 60 completely covering the light-transmitting body 50. Either side of the light-transmitting body 50 is provided with a protruding post 53 or rib for assisting the light-transmitting body 50 to be better combined with the insulating layer 60 via the hot pressing process. Further, as shown in the figures, when a wiring process is performed, the metallic lead 40 will be positioned in a level slightly higher than that of the surface of the light-emitting diode crystal 30. Thus, the height of the light-transmitting body 50 has to be larger than that of the metallic lead 40, thereby covering the light-emitting diode crystal 30 and the metallic lead 40 completely.
  • Although the present invention has been described with reference to the foregoing preferred embodiments, it will be understood that the invention is not limited to the details thereof. Various equivalent variations and modifications can still occur to those skilled in this art in view of the teachings of the present invention. Thus, all such variations and equivalent modifications are also embraced within the scope of the invention as defined in the appended claims.

Claims (6)

1. A light-emitting diode light bar, comprising:
a first lead;
a second lead separated from the first lead by a distance;
a light-emitting diode crystal having a first electrode and a second electrode, the first electrode being electrically fixed to the first lead;
a metallic lead electrically connected to the second electrode and the second lead;
a light-transmitting body for packaging the outside of the light-emitting diode crystal and the metallic lead, the first lead and the second lead on both sides of the light-transmitting body being formed with a lead-exposing region respectively; and
an insulating layer covering the outer surface of the lead-exposing region via a hot pressing process.
2. The light-emitting diode light bar according to claim 1, wherein the second electrode further comprises a metallic pad, the metallic lead is electrically connected to the metallic pad and the second lead.
3. The light-emitting diode light bar according to claim 1, wherein one side of the light-transmitting body for packaging the light-emitting diode crystal is referred to as an illuminated surface, and the other side is referred to as a back-lighted surface.
4. The light-emitting diode light bar according to claim 3, wherein the insulating layer further covers the back-lighted surface of the light-transmitting body.
5. The light-emitting diode light bar according to claim 3, wherein the insulating layer further covers the illuminated surface of the light-transmitting body.
6. The light-emitting diode light bar according to claim 1, wherein the insulating layer further covers the light-transmitting body.
US12/887,592 2008-12-31 2010-09-22 Light-emitting diode light bar Abandoned US20110012165A1 (en)

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Applications Claiming Priority (3)

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TW097151548A TW201025675A (en) 2008-12-31 2008-12-31 Light emitting diode light strip and method of making the same
US12/431,123 US7838312B2 (en) 2008-12-31 2009-04-28 Light-emitting diode light bar and method for manufacturing the same
US12/887,592 US20110012165A1 (en) 2008-12-31 2010-09-22 Light-emitting diode light bar

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US20110232087A1 (en) * 2010-03-29 2011-09-29 Cheng-Chung Chiu Method for manufacturing led light strings
JP5404705B2 (en) * 2011-07-25 2014-02-05 京セラコネクタプロダクツ株式会社 Manufacturing method of semiconductor light emitting element mounting module, and manufacturing method of semiconductor light emitting element module
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