US20110024041A1 - Method of manufacturing semiconductor device, and etching apparatus - Google Patents
Method of manufacturing semiconductor device, and etching apparatus Download PDFInfo
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- US20110024041A1 US20110024041A1 US12/923,711 US92371110A US2011024041A1 US 20110024041 A1 US20110024041 A1 US 20110024041A1 US 92371110 A US92371110 A US 92371110A US 2011024041 A1 US2011024041 A1 US 2011024041A1
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- etching
- shadow ring
- hard mask
- substrate
- etching apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/944—Shadow
Definitions
- the present invention relates to a method of manufacturing a semiconductor device making use of a shadow ring, and an etching apparatus.
- a shadow ring is occasionally used for an etching apparatus or a film-making apparatus used for manufacture of semiconductor devices.
- the shadow ring is a ring-form component disposed so as to cover a circumferential portion of a substrate, aimed at preventing a certain width of region ranging from the edge of the substrate from being etched or deposited with any film (see Japanese Laid-Open Patent Publication Nos. 2002-294441 and 2006-118004, for example). Without the shadow ring, the process would have an increased number of steps in the manufacturing, including a step of grinding the circumferential portion of the film so as to remove the deposited film.
- One step of using the shadow ring is known as a step of forming relatively deep trenches or holes to a layer to be etched.
- This step is such as forming a hard mask, typically composed of a silicon oxide film, on the layer to be etched, and then etching the layer using the hard mask as a mask.
- the shadow ring is used to protect the circumferential portion of the layer to be etched during etching.
- Japanese Laid-Open Patent Publication No. 2002-334879 describes a technique of forming a protective film on an insulating film formed on a wafer, specifically in the bevel region thereof in order to protect the insulating film in the bevel region.
- the hard mask is removed by etching, after the trenches or holes are formed.
- the circumferential portion of the layer to be etched is slightly etched. For this reason, the layer to be etched may be roughened in the circumferential portion, if the etching for removing the hard mask takes a long time.
- a method of manufacturing a semiconductor device which includes:
- the shadow ring has an irregular pattern on the inner circumferential edge thereof.
- the hard mask is slightly etched in a region not covered by the shadow ring. Since the shadow ring has the irregular pattern on the inner circumferential edge thereof, the irregular pattern of the shadow ring is transferred to the etched region of the hard mask.
- the hard mask has, therefore, an increased surface area, and may be etched within a short time in the step of removal. Accordingly, the circumferential portion of the layer to be etched may be suppressed from being roughened.
- an etching apparatus which includes:
- a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner
- the shadow ring has an irregular pattern on the inner circumferential edge thereof.
- the circumferential portion of the layer to be etched may be suppressed from being roughened.
- FIG. 1 is a drawing illustrating a configuration of an etching apparatus used for a method of manufacturing a semiconductor device in one embodiment
- FIG. 2 is a plan view illustrating an example of a shadow ring
- FIGS. 3A to 4B are sectional views sequentially illustrating steps of forming recesses or holes in the surficial portion of the substrate as the layer to be etched;
- FIG. 5 is a schematic perspective view explaining an operation of the shadow ring illustrated in FIG. 4A ;
- FIGS. 6A to 6E are plan views illustrating other examples of the shadow ring.
- FIG. 1 is a drawing illustrating a configuration of an etching apparatus used for the method of manufacturing a semiconductor device according to this embodiment.
- the etching apparatus has a process chamber 10 , an electrode 20 , a stage 30 , and a shadow ring 40 .
- the process chamber 10 allows an etching gas to be introduced therein.
- the electrode 20 is disposed in the process chamber 10 , and is used for generating plasma by ionizing the etching gas.
- the stage 30 is disposed in the process chamber 10 , onto which a substrate 50 is disposed.
- the shadow ring 40 is disposed in the process chamber 10 and placed above the stage 30 , so as to cover a circumferential portion and an inner region adjacent thereto of the substrate 50 in a non-contact manner.
- the shadow ring 40 has an irregular pattern on the inner circumferential edge thereof.
- the substrate 50 has a layer to be etched.
- the layer to be etched may be a surficial portion of the substrate 50 , or may be a film formed over the substrate 50 , or may be a semiconductor layer of an SOI substrate.
- a hard mask having an opening pattern is formed over the layer to be etched.
- the hard mask herein is not formed in the circumferential portion of the layer to be etched. Dry etching is proceeded while covering a region of the hard mask adjacent to the circumferential portion, and the circumferential portion of the layer to be etched, with a shadow ring in a non-contact manner.
- the trenches or holes are formed in the layer to be etched conforming to the opening pattern, wherein also a portion of the hard mask not covered with the shadow ring 40 is partially removed.
- the hard mask is then removed by etching.
- the shadow ring 40 has an irregular pattern on the inner circumferential edge thereof.
- the irregular pattern of the shadow ring 40 is therefore transferred to the hard mask positioned below the shadow ring 40 .
- the hard mask has, therefore, an increased area to be brought into contact with an etching solution or etching gas, and may be etched within a short time in the step of removal. Accordingly, the circumferential portion of the layer to be etched may be suppressed from being roughened. The process will be detailed below.
- FIG. 2 is a plan view illustrating an example of the shadow ring 40 .
- the shadow ring 40 has a plurality of recesses 42 at regular intervals on the inner circumferential surface thereof.
- the plan geometry of each recess 42 is rectangle or square.
- the width of each recess 42 is smaller than the distance between the adjacent recesses 42 .
- the shadow ring 40 is typically made of alumina.
- FIGS. 3A to 4B are sectional views sequentially showing steps of forming the recesses or holes in the surficial portion of the substrate 50 which serves as the layer to be etched.
- FIG. 5 is a schematic perspective view explaining an operation of the shadow ring 40 illustrated in FIG. 4A .
- the substrate 50 is typically composed of a semiconductor wafer such as a Si wafer.
- a hard mask 60 is formed over the substrate 50 .
- the hard mask 60 is typically a silicon oxide film, silicon nitride film, silicon oxide nitrogen, silicon nitrogen oxide, or a stacked film of at least two of these films, having an opening pattern 62 .
- a portion of the hard mask 60 positioned on the circumferential portion 52 of the substrate 50 is removed, typically when the opening pattern 62 is formed in the hard mask 60 .
- the thickness of the hard mask 60 is typically 0.3 ⁇ m or larger and 5 ⁇ m or smaller.
- an etching protection film 70 is formed over the circumferential portion 52 of the substrate 50 .
- the etching protection film 70 is typically composed of the same material with the hard mask 60 .
- the etching protection film 70 is thinner than the hard mask 60 , and has a thickness of 10 nm or larger and 200 nm or smaller, for example. Since the etching protection film 70 is formed by vapor-phase deposition (CVD, for example), so that the film is formed also on the hard mask 60 and in the opening pattern 62 .
- the hard mask 60 and the etching protection film 70 are formed in a process chamber different from the process chamber 10 .
- the substrate 50 is placed in the process chamber 10 illustrated in FIG. 1 , and the shadow ring 40 is positioned over the circumferential portion 52 of the substrate 50 and the portion of the hard mask 60 adjacent to the circumferential portion 52 , in a non-contact manner.
- an inert gas Ar gas, for example
- sputtering is carried out using the inert gas.
- an etching gas is introduced into the process chamber 10 , and the substrate 50 is etched using the etching gas.
- trenches or holes 54 are formed in the portion of the substrate positioned in the opening pattern 60 .
- the trenches or holes 54 are typically trenches to be filled with a device isolation film, or holes to be filled with through-electrode which extend vertically through the substrate 50 , or holes for forming trench capacitors.
- the etching gas may be less likely to reach the circumferential portion 52 .
- the circumferential portion 52 is covered also with the etching protection film 70 . Accordingly, the circumferential portion 52 of the substrate 50 may be suppressed from being roughened in this step of etching.
- the portion of the hard mask 60 not covered with the shadow ring 40 is etched to produce a recess 64 .
- An outer peripheral portion 65 of the hard mask 60 will consequently be thickened as compared with the other portion.
- the shadow ring 40 has the recesses 42 on the inner circumference edge thereof.
- the outer circumference of the recess 64 consequently has an irregularity transferred thereto, conforming to the recesses 42 .
- the surface area of the hard mask 60 increases by contribution of the area of bottom faces 66 and the area of side faces 68 formed corresponding to the side faces of the recess 42 .
- the substrate 50 is taken out from the process chamber 10 .
- the hard mask 60 and the etching protection film 70 are then removed typically by wet etching. If the hard mask 60 and the etching protection film 70 are composed of the same material, only a single step of etching will suffice.
- the outer peripheral portion 65 of the hard mask 60 remained to have no recess 64 formed therein, is therefore thicker as compared with the other portion. For this reason, the length of time necessary for this step may be governed by the length of time necessary for etching of the outer peripheral portion 65 of the hard mask 60 .
- the surface area of the hard mask 60 increases by contribution of the area of bottom faces 66 and the area of side faces 68 formed corresponding to the side faces of the recess 42 , as compared with a hard mask possibly obtained by using the shadow ring 40 having no recesses 42 in the inner circumference thereof. Accordingly, the etchrate of the outer peripheral portion 65 of the hard mask 60 increases, and thereby the length of time necessary for the etching may decrease. By virtue of the etching, the circumferential portion 52 of the substrate 50 may consequently be suppressed from being roughened.
- the surface area of the hard mask 60 may be increased by contribution of recesses 42 formed in the inner circumference of the shadow ring 40 , in the process of etching for forming the trenches or holes 54 in the substrate 50 .
- the length of time necessary for removing the hard mask 60 may be reduced, and thereby the circumferential portion 52 of the substrate 50 may be suppressed from being roughened.
- the circumferential portion 52 of the substrate 50 may be suppressed from being roughened, in the process of etching for forming the trenches or holes 54 in the substrate 50 .
- the circumferential portion 52 is covered with the etching protection film 70 in this embodiment, the circumferential portion 52 may further effectively be suppressed from being roughened, both in the etching for forming the trenches or holes 54 , and in the etching for removing the hard mask 60 . Since the etching protection film 70 is thinner than the hard mask 60 , the etching protection film 70 and the hard mask 60 may be removed together in the same process of etching, if they are composed of the same material.
- the etching protection film 70 is formed also in the opening pattern 62 , the portion of the etching protection film 70 in the opening pattern 62 is removed before the trenches or holes 54 are formed. Therefore, a process for forming the trenches or holes 54 may be prevented from being inhibited by the etching protection film 70 .
- the irregular pattern formed in the inner circumference of the shadow ring 40 is not limited to that illustrated in FIG. 2 .
- the number of recesses 42 may be increased.
- the etchrate of the outer peripheral portion 65 of the hard mask 60 increases, since the number of the bottom faces 68 and the side faces 68 increases.
- the projections between every adjacent recesses 42 may be rounded. In this case, the projections between every adjacent recesses 42 become less likely to be etched, and thereby the shadow ring 40 may be elongated in the service life thereof.
- each recess 42 may have a triangle profile. Also in these cases, the distance between every adjacent recesses 42 may arbitrarily be set. The projections between every adjacent recesses 42 may have triangle, square, or rounded profile. Still alternatively, as illustrated in FIG. 6E , the irregularity in the inner circumference edge of the shadow ring 40 may have a wavy profile.
- the etching protection film 70 may not be formed in the steps illustrated in FIGS. 3A to 4B .
Abstract
An etching apparatus includes a process chamber into which an etching gas is introduced, an electrode for generating plasma disposed in the process chamber, a stage disposed in the process chamber, on which a substrate is placed, and a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner. The shadow ring has an irregular pattern on the inner circumferential edge thereof.
Description
- This application is based on Japanese patent application No. 2008-125051 the content of which is incorporated hereinto by reference.
- The present application is a Divisional application of U.S. patent application Ser. No. 12/385,845, filed on Apr. 21, 2009.
- 1. Technical Field
- The present invention relates to a method of manufacturing a semiconductor device making use of a shadow ring, and an etching apparatus.
- 2. Related Art
- A shadow ring is occasionally used for an etching apparatus or a film-making apparatus used for manufacture of semiconductor devices. The shadow ring is a ring-form component disposed so as to cover a circumferential portion of a substrate, aimed at preventing a certain width of region ranging from the edge of the substrate from being etched or deposited with any film (see Japanese Laid-Open Patent Publication Nos. 2002-294441 and 2006-118004, for example). Without the shadow ring, the process would have an increased number of steps in the manufacturing, including a step of grinding the circumferential portion of the film so as to remove the deposited film.
- One step of using the shadow ring is known as a step of forming relatively deep trenches or holes to a layer to be etched. This step is such as forming a hard mask, typically composed of a silicon oxide film, on the layer to be etched, and then etching the layer using the hard mask as a mask. In this step, there is no hard mask formed in the circumferential portion of the layer to be etched, for the purpose of preventing generation of foreign matters from the hard mask in the process of handling. The shadow ring is used to protect the circumferential portion of the layer to be etched during etching.
- On the other hand, Japanese Laid-Open Patent Publication No. 2002-334879 describes a technique of forming a protective film on an insulating film formed on a wafer, specifically in the bevel region thereof in order to protect the insulating film in the bevel region.
- The hard mask is removed by etching, after the trenches or holes are formed. However, in this process, also the circumferential portion of the layer to be etched is slightly etched. For this reason, the layer to be etched may be roughened in the circumferential portion, if the etching for removing the hard mask takes a long time.
- According to the present invention, there is provided a method of manufacturing a semiconductor device which includes:
- forming a hard mask having an opening pattern, on a layer to be etched over a region excluding an outer circumferential portion;
- forming trenches or holes in the layer to be etched conforming to the opening pattern by dry etching, while covering a region of the hard mask adjacent to the circumferential portion, and the circumferential portion, with a shadow ring in a non-contact manner; and
- removing the hard mask by etching,
- wherein the shadow ring has an irregular pattern on the inner circumferential edge thereof.
- In the step of forming the trenches or holes in the layer to be etched, also the hard mask is slightly etched in a region not covered by the shadow ring. Since the shadow ring has the irregular pattern on the inner circumferential edge thereof, the irregular pattern of the shadow ring is transferred to the etched region of the hard mask. The hard mask has, therefore, an increased surface area, and may be etched within a short time in the step of removal. Accordingly, the circumferential portion of the layer to be etched may be suppressed from being roughened.
- According to the present invention, there is provided also an etching apparatus which includes:
- a process chamber into which an etching gas is introduced;
- an electrode for generating plasma disposed in the process chamber;
- a stage disposed in the process chamber, on which a substrate is placed; and
- a shadow ring disposed in the process chamber and placed above the stage, so as to cover the circumferential portion and an inner region adjacent thereto of the substrate in a non-contact manner,
- wherein the shadow ring has an irregular pattern on the inner circumferential edge thereof.
- According to the present invention, the circumferential portion of the layer to be etched may be suppressed from being roughened.
- The above and other objects, advantages and features of the present invention will be more apparent from the following description of certain preferred embodiments taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 is a drawing illustrating a configuration of an etching apparatus used for a method of manufacturing a semiconductor device in one embodiment; -
FIG. 2 is a plan view illustrating an example of a shadow ring; -
FIGS. 3A to 4B are sectional views sequentially illustrating steps of forming recesses or holes in the surficial portion of the substrate as the layer to be etched; -
FIG. 5 is a schematic perspective view explaining an operation of the shadow ring illustrated inFIG. 4A ; and -
FIGS. 6A to 6E are plan views illustrating other examples of the shadow ring. - The invention will now be described herein with reference to an illustrative embodiment. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiment illustrated for explanatory purposes.
- Embodiment of the present invention will be explained below. Note that any similar constituents will be given with similar reference numerals or symbols in all drawings, so that explanations therefor will not be repeated.
-
FIG. 1 is a drawing illustrating a configuration of an etching apparatus used for the method of manufacturing a semiconductor device according to this embodiment. The etching apparatus has aprocess chamber 10, anelectrode 20, astage 30, and ashadow ring 40. Theprocess chamber 10 allows an etching gas to be introduced therein. Theelectrode 20 is disposed in theprocess chamber 10, and is used for generating plasma by ionizing the etching gas. Thestage 30 is disposed in theprocess chamber 10, onto which asubstrate 50 is disposed. Theshadow ring 40 is disposed in theprocess chamber 10 and placed above thestage 30, so as to cover a circumferential portion and an inner region adjacent thereto of thesubstrate 50 in a non-contact manner. Theshadow ring 40 has an irregular pattern on the inner circumferential edge thereof. - The
substrate 50 has a layer to be etched. The layer to be etched may be a surficial portion of thesubstrate 50, or may be a film formed over thesubstrate 50, or may be a semiconductor layer of an SOI substrate. When the layer to be etched is etched, a hard mask having an opening pattern is formed over the layer to be etched. The hard mask herein is not formed in the circumferential portion of the layer to be etched. Dry etching is proceeded while covering a region of the hard mask adjacent to the circumferential portion, and the circumferential portion of the layer to be etched, with a shadow ring in a non-contact manner. By this step, the trenches or holes are formed in the layer to be etched conforming to the opening pattern, wherein also a portion of the hard mask not covered with theshadow ring 40 is partially removed. The hard mask is then removed by etching. - As described in the above, the
shadow ring 40 has an irregular pattern on the inner circumferential edge thereof. The irregular pattern of theshadow ring 40 is therefore transferred to the hard mask positioned below theshadow ring 40. The hard mask has, therefore, an increased area to be brought into contact with an etching solution or etching gas, and may be etched within a short time in the step of removal. Accordingly, the circumferential portion of the layer to be etched may be suppressed from being roughened. The process will be detailed below. -
FIG. 2 is a plan view illustrating an example of theshadow ring 40. In the example illustrated in the drawing, theshadow ring 40 has a plurality ofrecesses 42 at regular intervals on the inner circumferential surface thereof. The plan geometry of eachrecess 42 is rectangle or square. In the example illustrated in the drawing, the width of eachrecess 42 is smaller than the distance between the adjacent recesses 42. Theshadow ring 40 is typically made of alumina. -
FIGS. 3A to 4B are sectional views sequentially showing steps of forming the recesses or holes in the surficial portion of thesubstrate 50 which serves as the layer to be etched.FIG. 5 is a schematic perspective view explaining an operation of theshadow ring 40 illustrated inFIG. 4A . Thesubstrate 50 is typically composed of a semiconductor wafer such as a Si wafer. - First, as illustrated in
FIG. 3A , ahard mask 60 is formed over thesubstrate 50. Thehard mask 60 is typically a silicon oxide film, silicon nitride film, silicon oxide nitrogen, silicon nitrogen oxide, or a stacked film of at least two of these films, having anopening pattern 62. A portion of thehard mask 60 positioned on thecircumferential portion 52 of thesubstrate 50 is removed, typically when theopening pattern 62 is formed in thehard mask 60. The thickness of thehard mask 60 is typically 0.3 μm or larger and 5 μm or smaller. - Next, an
etching protection film 70 is formed over thecircumferential portion 52 of thesubstrate 50. Theetching protection film 70 is typically composed of the same material with thehard mask 60. Theetching protection film 70 is thinner than thehard mask 60, and has a thickness of 10 nm or larger and 200 nm or smaller, for example. Since theetching protection film 70 is formed by vapor-phase deposition (CVD, for example), so that the film is formed also on thehard mask 60 and in theopening pattern 62. - The
hard mask 60 and theetching protection film 70 are formed in a process chamber different from theprocess chamber 10. - Next, as illustrated in
FIG. 3B , thesubstrate 50 is placed in theprocess chamber 10 illustrated inFIG. 1 , and theshadow ring 40 is positioned over thecircumferential portion 52 of thesubstrate 50 and the portion of thehard mask 60 adjacent to thecircumferential portion 52, in a non-contact manner. Next, an inert gas (Ar gas, for example) is introduced into theprocess chamber 10, and sputtering is carried out using the inert gas. By this process, a portion of theetching protection film 70 not covered with the shadow ring 40 (including portions of theetching protection film 70 formed in the opening pattern 62), and a native oxide film positioned on the surficial portion of thesubstrate 50 in theopening pattern 62 are removed. This step may be proceeded also by etching, typically dry etching. - Next, as illustrated in
FIG. 4A , an etching gas is introduced into theprocess chamber 10, and thesubstrate 50 is etched using the etching gas. By this process, trenches or holes 54 are formed in the portion of the substrate positioned in theopening pattern 60. The trenches or holes 54 are typically trenches to be filled with a device isolation film, or holes to be filled with through-electrode which extend vertically through thesubstrate 50, or holes for forming trench capacitors. - Since the
circumferential portion 52 of thesubstrate 50 in this step of etching is covered with theshadow ring 40, the etching gas may be less likely to reach thecircumferential portion 52. Thecircumferential portion 52 is covered also with theetching protection film 70. Accordingly, thecircumferential portion 52 of thesubstrate 50 may be suppressed from being roughened in this step of etching. - In this step of etching, the portion of the
hard mask 60 not covered with theshadow ring 40 is etched to produce arecess 64. An outerperipheral portion 65 of thehard mask 60 will consequently be thickened as compared with the other portion. - As illustrated in
FIG. 2 andFIG. 5 , theshadow ring 40 has therecesses 42 on the inner circumference edge thereof. As illustrated inFIG. 5 , the outer circumference of therecess 64 consequently has an irregularity transferred thereto, conforming to therecesses 42. As a consequence, the surface area of thehard mask 60 increases by contribution of the area of bottom faces 66 and the area of side faces 68 formed corresponding to the side faces of therecess 42. - Thereafter, as illustrated in
FIG. 4B , thesubstrate 50 is taken out from theprocess chamber 10. Thehard mask 60 and theetching protection film 70 are then removed typically by wet etching. If thehard mask 60 and theetching protection film 70 are composed of the same material, only a single step of etching will suffice. The outerperipheral portion 65 of thehard mask 60, remained to have norecess 64 formed therein, is therefore thicker as compared with the other portion. For this reason, the length of time necessary for this step may be governed by the length of time necessary for etching of the outerperipheral portion 65 of thehard mask 60. - In this embodiment, as explained referring to
FIG. 5 , the surface area of thehard mask 60 increases by contribution of the area of bottom faces 66 and the area of side faces 68 formed corresponding to the side faces of therecess 42, as compared with a hard mask possibly obtained by using theshadow ring 40 having norecesses 42 in the inner circumference thereof. Accordingly, the etchrate of the outerperipheral portion 65 of thehard mask 60 increases, and thereby the length of time necessary for the etching may decrease. By virtue of the etching, thecircumferential portion 52 of thesubstrate 50 may consequently be suppressed from being roughened. - As has been described in the above, according to this embodiment, the surface area of the
hard mask 60 may be increased by contribution ofrecesses 42 formed in the inner circumference of theshadow ring 40, in the process of etching for forming the trenches or holes 54 in thesubstrate 50. As a consequence, the length of time necessary for removing thehard mask 60 may be reduced, and thereby thecircumferential portion 52 of thesubstrate 50 may be suppressed from being roughened. - Also since the
shadow ring 40 is used, thecircumferential portion 52 of thesubstrate 50 may be suppressed from being roughened, in the process of etching for forming the trenches or holes 54 in thesubstrate 50. - Since the
circumferential portion 52 is covered with theetching protection film 70 in this embodiment, thecircumferential portion 52 may further effectively be suppressed from being roughened, both in the etching for forming the trenches or holes 54, and in the etching for removing thehard mask 60. Since theetching protection film 70 is thinner than thehard mask 60, theetching protection film 70 and thehard mask 60 may be removed together in the same process of etching, if they are composed of the same material. - Although the
etching protection film 70 is formed also in theopening pattern 62, the portion of theetching protection film 70 in theopening pattern 62 is removed before the trenches or holes 54 are formed. Therefore, a process for forming the trenches or holes 54 may be prevented from being inhibited by theetching protection film 70. - The irregular pattern formed in the inner circumference of the
shadow ring 40 is not limited to that illustrated inFIG. 2 . For example, as illustrated inFIG. 6A , the number ofrecesses 42 may be increased. In this case, the etchrate of the outerperipheral portion 65 of thehard mask 60 increases, since the number of the bottom faces 68 and the side faces 68 increases. Alternatively, as illustrated inFIG. 6B , the projections between every adjacent recesses 42 may be rounded. In this case, the projections between every adjacent recesses 42 become less likely to be etched, and thereby theshadow ring 40 may be elongated in the service life thereof. - Alternatively, as illustrated in
FIGS. 6C and 6D , eachrecess 42 may have a triangle profile. Also in these cases, the distance between every adjacent recesses 42 may arbitrarily be set. The projections between every adjacent recesses 42 may have triangle, square, or rounded profile. Still alternatively, as illustrated inFIG. 6E , the irregularity in the inner circumference edge of theshadow ring 40 may have a wavy profile. - Alternatively, the
etching protection film 70 may not be formed in the steps illustrated inFIGS. 3A to 4B . - The embodiments of the present invention have been described referring to the attached drawings. Note that these embodiments are only for exemplary purposes, while allowing adoption of any configurations other than those described in the above.
- It is apparent that the present invention is not limited to the above embodiment, that may be modified and changed without departing from the scope and spirit of the invention.
Claims (8)
1. An etching apparatus comprising:
a process chamber into which an etching gas is introduced;
an electrode for generating plasma disposed in said process chamber;
a stage disposed in said process chamber, on which a substrate is placed; and
a shadow ring disposed in said process chamber and placed above said stage, so as to cover the circumferential portion and an inner region adjacent thereto of said substrate in a non-contact manner,
wherein said shadow ring has an irregular pattern on the inner circumferential edge thereof.
2. The etching apparatus according to claim 1 ,
wherein the inner circumferential surface of said shadow ring has a plurality of recesses at regular intervals.
3. The etching apparatus according to claim 2 ,
wherein said recesses are rectangular-shaped.
4. The etching apparatus according to claim 2 ,
wherein said recesses are square-shaped.
5. The etching apparatus according to claim 2 ,
wherein said recesses are triangular-shaped.
6. The etching apparatus according to claim 2 ,
wherein said recesses are rounded.
7. The etching apparatus according to claim 2 ,
wherein a width of a recess of said recesses is smaller than a distance between adjacent ones of said recesses.
8. The etching apparatus according to claim 1 ,
wherein said shadow ring comprises alumina.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US12/923,711 US20110024041A1 (en) | 2008-05-12 | 2010-10-05 | Method of manufacturing semiconductor device, and etching apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2008125051A JP2009277720A (en) | 2008-05-12 | 2008-05-12 | Method of manufacturing semiconductor device and etching device |
JP2008-125051 | 2008-05-12 | ||
US12/385,845 US7833909B2 (en) | 2008-05-12 | 2009-04-21 | Method of manufacturing semiconductor device, and etching apparatus |
US12/923,711 US20110024041A1 (en) | 2008-05-12 | 2010-10-05 | Method of manufacturing semiconductor device, and etching apparatus |
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Application Number | Title | Priority Date | Filing Date |
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US12/385,845 Division US7833909B2 (en) | 2008-05-12 | 2009-04-21 | Method of manufacturing semiconductor device, and etching apparatus |
Publications (1)
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US20110024041A1 true US20110024041A1 (en) | 2011-02-03 |
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US12/385,845 Active US7833909B2 (en) | 2008-05-12 | 2009-04-21 | Method of manufacturing semiconductor device, and etching apparatus |
US12/923,711 Abandoned US20110024041A1 (en) | 2008-05-12 | 2010-10-05 | Method of manufacturing semiconductor device, and etching apparatus |
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US12/385,845 Active US7833909B2 (en) | 2008-05-12 | 2009-04-21 | Method of manufacturing semiconductor device, and etching apparatus |
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JP (1) | JP2009277720A (en) |
CN (1) | CN101582376B (en) |
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WO2021252758A1 (en) * | 2020-06-11 | 2021-12-16 | Lam Research Corporation | Flat bottom shadow ring |
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JP2014204062A (en) * | 2013-04-09 | 2014-10-27 | サムコ株式会社 | Plasma etching method |
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CN107689326A (en) * | 2016-08-05 | 2018-02-13 | 上海新昇半导体科技有限公司 | A kind of wafer thining method and device |
KR102273970B1 (en) * | 2017-12-26 | 2021-07-07 | 주식회사 엘지화학 | Method for plasma etching process using faraday box |
EP3640973A4 (en) * | 2018-01-17 | 2021-03-17 | SPP Technologies Co., Ltd. | Wide-gap semiconductor substrate, apparatus for manufacturing wide-gap semiconductor substrate, and method for manufacturing wide-gap semiconductor substrate |
KR102102308B1 (en) * | 2018-03-12 | 2020-04-20 | 한국표준과학연구원 | Method for Patterning using Protection Layer, and Method for Fabricating Electronic Element using the Same |
CN109806728A (en) * | 2018-12-26 | 2019-05-28 | 上海谷奇核孔膜科技股份有限公司 | Prepare the device and method of nucleopore membranes |
CN112877655A (en) * | 2021-03-08 | 2021-06-01 | 泰杋科技股份有限公司 | Reaction cavity for sputtering deposition |
CN113178378A (en) * | 2021-04-29 | 2021-07-27 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
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Also Published As
Publication number | Publication date |
---|---|
US7833909B2 (en) | 2010-11-16 |
JP2009277720A (en) | 2009-11-26 |
CN101582376B (en) | 2011-06-22 |
CN101582376A (en) | 2009-11-18 |
US20100144154A1 (en) | 2010-06-10 |
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