US20110024759A1 - Thin film transistor substrate and method for forming metal wire thereof - Google Patents
Thin film transistor substrate and method for forming metal wire thereof Download PDFInfo
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- US20110024759A1 US20110024759A1 US12/901,324 US90132410A US2011024759A1 US 20110024759 A1 US20110024759 A1 US 20110024759A1 US 90132410 A US90132410 A US 90132410A US 2011024759 A1 US2011024759 A1 US 2011024759A1
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- substrate
- layer
- wiring
- thin film
- gate
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
Description
- The present application is a divisional of U.S. patent application Ser. No. 11/691,455 filed on Mar. 26, 2007, which is a continuation of U.S. patent application Ser. No. 10/539,223 filed on Jun. 16, 2005, which is a National Stage Application claiming priority to PCT Application No. PCT/KR2003/000599 filed on Mar. 26, 2003, which claims priority to Korean Application No. 10-2003-0000757 filed on 7 Jan. 2003, all of which are incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates to a thin film transistor substrate and a metal wiring method thereof, and more particularly to a thin film transistor substrate having superior adhesion ability and diffusion resistance and a metal wiring method thereof.
- 2. Description of the Related Art
- A thin film transistor (TFT) is one of the devices widely used as switching devices of TFT liquid crystal displays.
- A thin film transistor substrate comprises a scanning signal wiring or gate wiring that transfers scanning signals, a picture signal wiring or data wiring that transfers picture signals, a thin film transistor that connects the gate wiring and the data wiring, a pixel electrode connected to the thin film transistor, a gate insulation film that covers the gate wiring, and a passivation film that protects the thin film transistor and the data wiring. A thin film transistor comprises a semiconductor layer that forms a gate electrode and channels, a source electrode, a drain electrode, a gate insulation film and a passivation layer. A thin film transistor is a switching device that transfers or interrupts picture signals transferred through the data wiring depending on scanning signals transferred by the gate wiring.
- In TFT LCDs using the thin film transistor as a switching device, an electric field is applied to the liquid crystal using optical anisotropy and polarization of the liquid crystal. The electric field controls arrangement orientation of the liquid crystal molecules to offer images.
- In the active matrix liquid crystal display (AMLCD), which is being actively researched and developed, the pixel electrodes connected with the thin film transistor are arranged in matrix form, so that it can offer large screen size and high resolution, such as SXGA or UXGA.
- In order to make such large-area and high-resolution liquid crystal displays as SXGA or UXGA, resistance of gate wiring, data wiring and other wirings should be low. In particular, if the resistance of the gate wiring is high, the image quality worsens because of cross-talks due to signal delay caused by the wiring resistance. Metals that can be used for the wiring and their characteristics are summarized in the following Table 1.
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TABLE 1 Specific resistance Adhesion Heat Metal (μΩ cm) Price ability resistance Cu 2 Low Low High Au 3 High Low High Al 4 Low High Low Mo 20 Moderate High High Cr 50 Moderate High High - As seen in Table 1, aluminum has low heat resistance. While copper is satisfactory in cost and heat resistance, it has poor adhesion ability to the substrate. Therefore, many researches are trying to improve the adhesion ability of copper to the substrate.
- In this regard, wirings of copper alloys, such as Cu/Ti/Si, Cu/TiN/Si, Cu/Ta/Si and Cu/TaN/Si, are widely used. However, these copper alloy wirings are manufactured through complicated processes. Also, they have weak adhesion of Si and Cu, and the anti-diffusion films are thick. Moreover, the anti-diffusion films react with Cu during heat treatment.
- Recently, the copper-silver alloy wirings are widely used. However, silver has weak adhesion ability to the glass substrate or silicon layers. The weak adhesion ability causes problems like the thin film's coming off from the substrate or breaking of the wiring. Also, silver is easily damaged by dry-type etching agents for etching insulation film consisting of silicon nitride, etc.
- The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and metal wiring and a metal wiring method thereof.
- The thin film transistor substrate of the present invention has cross-linked self-assembled monolayers between Si surface and metal wiring, thereby offering good adhesion ability and anti-diffusion ability.
-
FIGS. 1 a and 1 b show copper or copper alloy wiring structure, wherein an anti-diffusion film is formed between the Si surface and Cu. -
FIGS. 2 a to 2 d show AES (Auger electron spectrometer) depth profiles of copper (Cu) wiring, wherein self-assembled monolayers are formed between the Si surface and Cu or Cu(Ag), before and after heat treatment at 300.degree. C. -
FIG. 3 is a graph that shows change in specific resistance of copper or copper alloy on top of the self-assembled monolayers according to the temperature. -
FIGS. 4 a and 4 b show a thin film transistor substrate for a liquid crystal display of the present invention. -
FIGS. 5 a and 5 b are cross-sectional views along the line V-V′ ofFIGS. 4 a and 4 b, respectively. -
FIGS. 6 a, 7 a, 8 a and 9 a show a thin film transistor substrate for a liquid crystal display of the present invention, which is being prepared by a sequential process. -
FIG. 6 b is a cross-sectional view along the line VIb-VIb′ ofFIG. 6 a. -
FIG. 7 b is a cross-sectional view along the line VIIb-VIIb′ ofFIG. 7 a and shows the step next to that ofFIG. 6 b. -
FIG. 8 b is a cross-sectional view along the line VIIIb-VIIIb′ ofFIG. 8 a and shows the step next to that ofFIG. 7 b. -
FIG. 9 b is a cross-sectional view along the line IXb-IXb′ ofFIG. 9 a and shows the step next to that ofFIG. 8 b. -
FIG. 10 is a diagrammatic view of a thin film transistor substrate for a liquid crystal display of the present invention. -
FIG. 11 is a cross-sectional view along the line XI-XI′ ofFIG. 10 . -
FIG. 12 is a cross-sectional view along the line XII-XII′ ofFIG. 10 . -
FIG. 13 a is a diagrammatic view of a thin film transistor substrate for a liquid crystal display of the present invention. -
FIGS. 13 b and 13 c are cross-sectional views along the lines XIIIb-XIIIb′ and XIIIc-XIIIc′ ofFIG. 13 a, respectively. -
FIGS. 14 a and 14 b are cross-sectional views along the lines XIIIb-XIIIb′ and XIIIc-XIIIVc′ ofFIG. 13 a, respectively, which show the step next to that ofFIG. 13 b andFIG. 13 c. -
FIG. 15 a is a diagrammatic view of a thin film transistor substrate at the step next to that ofFIGS. 14 a and 14 b. -
FIGS. 15 b and 15 c are cross-sectional views along the lines XVb-XVb′ and XVc-XVc′ ofFIG. 15 a. -
FIGS. 16 a, 17 a and 18 a andFIGS. 16 b, 17 b and 18 b are cross-sectional views along the lines XVb-XVb′ and XVc-XVc′ ofFIG. 15 a, respectively, and show the steps following that ofFIGS. 15 b and 15 c. -
FIG. 19 a andFIG. 19 b are cross-sectional views of a thin film transistor substrate at the step next to that ofFIGS. 18 a and 18 b. -
FIG. 20 a is a diagrammatic view of a thin film transistor substrate at the step next to that ofFIG. 19 a andFIG. 19 b. -
FIGS. 20 b and 20 c are cross-sectional views along the lines XXb-XXb′ and XXc-XXc′ ofFIG. 20 a, respectively. - An object of the present invention is to provide a thin film transistor substrate having superior adhesion ability to the substrate and superior anti-diffusion ability.
- It is another object of the present invention to provide a liquid crystal display comprising the thin film transistor substrate.
- It is still another object of the present invention to provide a metal wiring method of the thin film transistor substrate.
- In order to achieve these objects, the present invention provides a thin film transistor substrate characterized by comprising self-assembled monolayers between the substrate and metal wiring.
- The present invention also provides a liquid crystal display comprising the thin film transistor substrate.
- The present invention also provides a metal wiring method of a thin film transistor substrate, which comprises: (a) a step of forming self-assembled monolayers by coating self-assembled monolayers (SAMs) forming coating composition on the substrate and heat-treating it; (b) a step of depositing metal wiring material on the substrate; and (c) a step of heat-treating the substrate.
- Hereunder is given a more detailed description of the present invention A thin film transistor substrate of the present invention is characterized by self-assembled monolayers formed between the substrate and metal wiring.
- For self-assembled monolayers forming materials, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminoundecyltrimethoxysilane, aminophenyltrimethoxysilane, N-(2-aminoethylaminopropyl)trimethoxysilane, methyltrimethoxysilane, propyltriacetoxysilane and (3-mercaptopropyl)trimethoxysilane are preferable.
- Since self-assembled monolayers formed from these silane compounds have three-dimensional cross-linkages, they offer good adhesion ability to the substrate. Also they prevent diffusion of copper to the substrate surface. Therefore, they are useful in preparing high-quality substrates.
- In order to prepare a thin film transistor substrate, the self-assembled monolayers are preferred to have 2 to 3 nm of thickness.
- A metal wiring is formed on the self-assembled monolayers. For the metal wiring material, copper or copper alloy is preferred. For the metal used in the copper alloy, Ag, Mg, B, Ca, Al, Li, Np, Pu, Ce, Eu, Pr, La, Nd, Sm, Zn or any mixture thereof are preferred.
- When a copper alloy is used for the metal wiring material the metal component, i.e., Ag, Mg, B, Ca, Al, Li, Np, Pu, Ce, Eu, Pr, La, Nd, Sm, Zn or any mixture thereof, diffused to the substrate or film surface serves as an anti-diffusion film together with the self-assembled monolayers. Since these metals have lower surface energy than copper, they have desirable contact resistance. Particularly, Ag offers superior anti-diffusion ability because it is not fairly soluble to Si.
- In a thin film transistor substrate comprising self-assembled monolayers between the substrate and metal wiring according to the present invention, the substrate is preferably a glass substrate, an n+a-Si/a-Si/SiN three-layer substrate, or an Si, SiO2 or other low-k (k<3.5) substrate.
- When self-assembled monolayers are formed in a glass substrate, an n+a-Si/a-Si/SiN three-layer substrate, or an Si, SiO2 or other low-k (k<3.5) substrate, which is used for a thin film transistor substrate of the present invention, a silicide is formed to offer superior adhesion to the lower substrate and prevents diffusion of copper to the substrate.
- A metal wiring method of a thin film transistor substrate of the present invention is as follows.
- Firstly, self-assembled monolayers (SAMs) forming coating composition is coated on the substrate and heat-treated to form self-assembled monolayers (SAMs) [Step (a)].
- For the self-assembled monolayers forming material, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminoundecyltrimethoxysilane, aminophenyltrimethoxysilane, N-(2-aminoethylaminopropyl)trimethoxysilane, methyltrimethoxysilane, propyltriacetoxysilane and (3-mercaptopropyl)trimethoxysilane are preferable.
- To form self-assembled monolayers on the substrate, the self-assembled monolayers forming material should be dissolved in a solvent, coated on the substrate and hardened by heat treatment. For the solvent, alcohols like methanol, ethanol, propanol and butanol, cellusolv solvents like methyl cellusolv, dimethylformamide or water are preferred.
- Mixing ration of the silane compound, a self-assembled monolayers forming material, and the solvent is preferably 1:20 to 1:30 by weight.
- The self-assembled monolayers forming material can be coated on the substrate by dipping, spinning, spraying or printing.
- After the substrate self-assembled monolayers forming material dissolved in the solvent is coated on the substrate, it is heat-treated and hardened to form self-assembled monolayers. The heat treatment temperature is preferably 100 to 300.degree. C., so that the silane compound can be condensed.
- In a thin film transistor substrate having self-assembled monolayers according to the present invention, a glass substrate, an n+a-Si/a-Si/SiN three-layer substrate, or an Si, SiO2 or other low-k (k<3.5) substrate can be preferably used for the substrate.
- After self-assembled monolayers are formed on the substrate, a metal wiring material is deposited on it [Step (b)]. For the metal wiring material, copper or copper alloy is preferable. For the alloy component, a metal having lower surface energy than copper, such as Ag, Mg, B, Ca, Al, Li, Np, Pu, Ce, Eu, Pr, La, Nd, Sm, Zn or any mixture thereof, is preferable. In the copper alloy, the alloy component is preferably added in 0.1 to 1 5° wt. % to copper.
- Then, the substrate with the metal wiring material deposited is heat-treated [Step {circle around (c)}]. The heat treatment is preferably carried out at 100 to 300.degree. C. in vacuum.
- If Ti, TiN, Ta or TaN, which is used as conventional anti-diffusion film, is heat-treated, copper reacts with the anti-diffusion film to increase specific resistance. However, the self-assembled monolayers of the present invention do not react with copper when heat-treated. Therefore, the specific resistance does not increase and a thin anti-diffusion film of nanometer dimension is obtained.
-
FIGS. 1 a and 1 b show a copper or copper alloy wiring structure, wherein self-assembled monolayers are formed between Si surface and Cu. InFIG. 1 a, only copper was used; and inFIG. 1 b, copper-silver alloy was used. As seen inFIG. 1 b, the copper-silver alloy offers an Ag layer on the self-assembled monolayers to form a three-layer structure. Therefore, diffusion of copper to the Si surface can be prevented more effectively. -
FIGS. 2 a and 2 b are AES depth profiles of a copper (Cu) wiring, wherein self-assembled monolayers are formed between the Si surface and Cu, before and after heat treatment at 300.degree. C.FIGS. 2 c and 2 d are AES depth profiles of a copper alloy [Cu(Ag)] wiring, wherein self-assembled monolayers are formed between the Si surface and Cu, before and after heat treatment at 300.degree. C. AES (Auger electron spectrometer) analysis is a method of detecting substances in a specimen by sputtering electrons to the specimen. - As seen in
FIGS. 2C and 2D , Cu was hardly detected after the time mark representing 15 time units of sputtering. It shows that the self-assembled monolayers formed between the Si surface and copper alloy effectively prevents diffusion of Cu to the Si surface. Therefore, they can be utilized to make a thin film transistor substrate having a superior anti-diffusion ability. In particular, a superior anti-diffusion ability can be maintained even at about 400.degree. C. if a copper alloy is used as wiring material. -
FIG. 3 is a graph that shows change in specific resistance of copper or copper alloy on top of the self-assembled monolayers according to the temperature. In a thin film transistor substrate of the present invention, the self-assembled monolayers formed at the bottom of the copper or copper alloy wiring inhibits reaction of copper with the anti-diffusion film during heat treatment. Therefore, the specific resistance does not increase. - Hereunder is given a specific description of a thin film transistor substrate according to the present invention.
- A thin film transistor substrate of the present invention comprises: an insulation substrate; a first signal line formed on the insulation substrate; a first insulation film formed on the first signal line; a second signal line formed on the first insulation film and crossing with the first signal line; a thin film transistor electrically connected with the first signal line and the second signal line; a second insulation film formed on the thin film transistor and having a first contact opening that exposes electrodes of the thin film transistor; and pixel electrodes formed on the second insulation film and connected with electrodes of the thin film transistor through the first contact opening. At least one of the first signal line or the second signal line has a copper or copper alloy wiring comprising a two-layer structure of self-assembled monolayers and a Cu layer.
- Referring to the attached drawings, a wiring method of thin film transistor substrate of the present invention is explained below, taking a thin film transistor liquid crystal display as an example.
-
FIG. 4 a shows a thin film transistor substrate for a liquid crystal display of the present invention, andFIG. 5 a is a cross-sectional view of the thin film transistor substrate along the line V-V′ ofFIG. 4 a. - A
gate wiring gate wiring layer gate wiring layer insulation substrate 10. The firstgate wiring layer 221 241, 261 is made of self-assembled monolayers and the secondgate wiring layer gate wiring layer substrate 10. Preferably, the firstgate wiring layer gate wiring layer - The
gate wiring gate line 22 stretching horizontally and agate electrode 26 connected with thegate line 22. Oneend 24 of thegate line 22 has an extended width for connection with an external circuit. - On the
substrate 10, agate insulation film 30 made of a silicon nitride (SiNx), etc. covers thegate wiring - On top of the
gate insulation film 30 of thegate electrode 24, asemiconductor layer 40 made of semiconductor like amorphous silicon is formed. And, on thesemiconductor layer 40, aohmic contact layer - On the
ohmic contact layer gate insulation film 30, adata wiring data wiring layer data wiring layer data wiring layer data wiring layer data wiring layer ohmic contact layer gate insulation film 30. Preferably, the firstdata wiring layer data wiring layer - The
data wiring data line 62 formed vertically and defines a pixel by crossing with thegate line 22, asource electrode 65 branching from thedata line 62 and extended to the upper part of the ohmic contact layer 54, and adrain electrode 66 separated from thesource electrode 65 and formed on top of theohmic contact layer 56 on the opposite side of thesource electrode 65 with thegate electrode 26 at the center. Oneend 68 of thedata line 62 has a widened width for connection with an external circuit. - On the data wiring 62, 65, 66, 68 and the
semiconductor layer 40 not covered by it, aprotection film 70 consisting of a silicon nitride (SiNx) film, an a-Si:C:O film or an a-Si:O:F film (low-k CVD film) deposited by the PECVD (plasma enhanced chemical vapor deposition) method, and acrylic insulation film, etc., is formed. The a-Si:C:O film and the a-Si:O:F film (low-k CVD film) deposited by the PECVD method have very low dielectric constant (k ranging from 2 to 4). Accordingly, there arises no problem of parasitic capacitance even with a thin thickness. And, adhesion to other films and step coverage are superior. Also, the inorganic CVD film offers superior heat resistance to organic insulation films. Moreover, the A-Si:C:O film and the a-Si:O:F film (low-k CVD film) deposited by the PECVD method offers 4 to 10 times faster deposition and etching rate than a silicon nitride film. - On the
protection film 70, acontact opening 76 exposing thedrain electrode 66, acontact opening 78 exposing the end part of thedata line 68, and acontact opening 74 exposing the end part of thegate line 24 together with thegate insulation film 30 are formed. Thecontact openings gate line contact openings - On the
protection film 70, apixel electrode 82 electrically connected with thedrain electrode 66 through thecontact opening 76 and located at a pixel area is formed. Also,contact supporting members protection film 70 through thecontact openings pixel electrode 82 and thecontact supporting members - The
pixel electrode 82 makes a maintenance capacitor in parallel with thegate line 22, as seen inFIG. 4 andFIG. 5 a. In case maintenance capacitance is insufficient, additional wiring may be added in the layer of thegate wiring - The opening ratio can be maximized by having the
pixel electrode 82 and thedata line 62 overlap. Even if thepixel electrode 82 is overlapped with thedata line 62 to maximize the opening ratio, parasitic capacitance can be minimized if a low-k CVD film, etc. is used. - Now, a preparing method of a thin film transistor substrate of the present invention will be explained in detail, referring to
FIG. 4 ,FIG. 5 a, andFIGS. 6 a to 10 b. - Firstly, a first
gate wiring layer gate wiring layer substrate 10 and photo-etched to form agate line 22, agate electrode 26 and agate wiring gate line 24 and extending horizontally, as inFIGS. 6 a and 6 b. - Next, a
gate insulation film 30 consisting of silicon nitride, asemiconductor layer 40 consisting of amorphous silicon and a dopedamorphous silicon layer 50 are applied, and thesemiconductor layer 40 and the dopedamorphous silicon layer 50 are photo-etched to form asemiconductor layer 40 and aohmic contact layer 50 of an island shape on thegate insulation film 30 on top of thegate electrode 24, as inFIGS. 7 a and 7 b. - Then, a first
data wiring layer data wiring layer data line 62 crossing with thegate line 22, asource electrode 65 connected with thedata line 62 and extended to the upper part of thegate electrode 26, an end part of thedata line 68 connected to thedata line 62, and adrain electrode 66 separated from thesource electrode 64 and opposing thesource electrode 65 with thegate electrode 26 at the center, as inFIGS. 8 a and 8 b. - Subsequently, an amorphous
silicon layer pattern 50 not covered by the data wiring 62, 65, 66, 68 is etched to separate thegate electrode 26 in two parts and to expose asemiconductor layer pattern 40 between the doped amorphous silicon layers 55, 56 on both sides. Preferably, the exposedsemiconductor layer 40 surface is stabilized with an oxygen plasma. - Next, a silicon nitride film, an a-Si:C:O film or an a-Si:O:F film is grown by the chemical vapor deposition (CVD) method or an organic insulation film is coated to form a
protection film 70, as inFIGS. 9 a and 9 b. - Subsequently, the
gate insulation film 30 and theprotection film 70 are patterned by photo-etching to formcontact openings gate line 24, thedrain electrode 66 and the end part of thedata line 68. Thecontact openings contact openings end parts - Lastly, an ITO or IZO film is deposited and photo-etched to form a
pixel electrode 82 connected to thedrain electrode 66 through thefirst contact opening 76, an end part of the supportinggate line 86 connected to the end part of thegate line 24 through the second contact opening 74, and an end part of the supportingdata line 88 connected to the end part of thedata line 68 through thethird contact opening 78, as inFIGS. 4 and 5 . Preferably, nitrogen gas is used in the pre-heating process before depositing ITO or IZO. This is to prevent formation of a metal oxide film onmetal films contact openings - As explained above, the gate wiring and the data wiring are made of silver or silver alloy and a protection layer is formed to protect the silver or silver alloy layer and the adhesion layer, in order to offer a low-resistance wiring and improve wiring reliability.
- In the present invention, both the gate wiring and the data wiring are formed in two layers. However, only one of the two wirings may be formed in tow layers, if necessary.
-
FIG. 5 b is a cross-sectional view along the line V-V′ ofFIG. 4 b. It shows a COA (Color filter On Array) structure of a thin film transistor substrate prepared using five masks according to the present invention. The present invention can be equally applied to a COA structure of a thin film transistor substrate prepared with four masks. - A double-layer gate wiring consisting of self-assembled
monolayers copper layer insulation substrate 10. The gate wiring comprises a scanning signal line or agate line 22 stretching horizontally, and agate electrode 26 connected to the end of thegate line 22 and accepting scanning signals from outside. A protruding part of thegate line 22 is overlapped with a conductor pattern formaintenance capacitor 64 connected with thepixel electrode 82 to make a maintenance capacitor for improving charge retaining ability of the pixel. - On the
gate wiring substrate 10, agate insulation film 30 made of silicon nitride (SiNx), etc. is formed. Thegate electrode 24 is covered with agate insulation film 30. - On the gate
insulation film pattern 30, asemiconductor pattern 40 made of semiconductors like hydrogenated amorphous silicon is formed. On thesemiconductor pattern 40, anohmic contact layer - On the
ohmic contact layer source electrode 65 and adrain electrode 66 made of conductors like Mo or MoW alloy, Cr, Al or Al alloy, Ta, etc. are formed. The data wiring is formed vertically and also comprises adata line 62 formed vertically and connected with thesource electrode 65, adata pad 68 connected to one end of thedata line 62 and accepting picture signals from outside, and a conductor pattern formaintenance capacitor 64 overlapping with the protruding part of thegate line 22. - Preferably, the data wiring 62, 64, 65, 66, 68 also has a two-layer structure of self-assembled
monolayers copper layer gate wiring - The
ohmic contact layer semiconductor pattern 40 and the data wiring 62, 64, 65, 66, 68. - Although not depicted on the figures, an inter-layer insulation film made of insulators like silicon oxide or silicon nitride may be formed on the data wiring 62, 64, 65, 66, 68 and the
semiconductor pattern 40 not covered by the data wiring. - In the pixel area on the
gate insulation film 30, red, green and blue color filters (R, G, B) having openings C1, C2 that expose thedrain electrode 65 and the conductor pattern formaintenance capacitor 64 are formed vertically. Although the boundaries of the red, green and blue color filters (R, G, B) are depicted to fit the upper part of thedata line 62, they may block lights leaked out of the pixel area. - On the red, green and
blue color filters 81, 82, 83, aprotection film 70 made of acrylic organic insulation material or SiOC or SiOF having good flattening property and dielectric constant lower than 4.0 is formed by the chemical vapor deposition. This protection film 90 hascontact openings gate line 24, the end part of the data line, thedrain electrode 66 and the conductor pattern formaintenance capacitor 64, together with thegate insulation film 30. Thecontact openings drain electrode 66 and the conductor pattern formaintenance capacitor 64 are located inside of the openings C1, C2 of the color filters (R, G, B). As explained above, the same pattern as that of the inter-layer insulation film is obtained, if an inter-layer insulation film is added to the lower part of the color filters (R, G, B). - On the
protection film 70, apixel electrode 82 accepting picture signals from the thin film transistor and generating an electric field together with the electrode of the upper layer is formed. Thepixel electrode 82 is made of transparent conducting material like ITO (indium tin oxide) or IZO (indium zinc oxide), and is connected with thedrain electrode 66 physically and electrically to accept picture signals. Thepixel electrode 82 is overlapped with thegate line 22 and thedata line 62 to enhance the opening ratio. However, they may not be overlapped. Thepixel electrode 82 is also connected with the conductor pattern formaintenance capacitor 64 through thecontact opening 72 to transfer picture signals to theconductor pattern 64. On the end part of thegate line 24 and the end part of thedata line 68,contact supporting members end parts contact openings contact supporting members data line 68 and the end part of thegate line 24 to external circuits and protect the pad. Use of thecontact supporting members - The above method can be equally applied to preparation of a thin film transistor substrate for a liquid crystal display using four masks.
- Referring to
FIGS. 10 to 12 , a unit pixel structure of a thin film transistor substrate for a liquid crystal display according to the present invention prepared with four masks will be explained in detail. -
FIG. 10 is a diagrammatic view of a thin film transistor substrate for a liquid crystal display according to a second example of the present invention, andFIG. 11 andFIG. 12 are cross-sectional views along the lines XI-XI′ and XII-XII′ ofFIG. 10 , respectively. - Firstly, a
gate wiring gate wiring layer gate wiring layer insulation substrate 10 as in the first example. The firstgate wiring layer gate wiring layer gate wiring layer substrate 10. Preferably, the firstgate wiring layer gate wiring layer gate line 22, and end part of thegate line 24 and agate electrode 26. - On the
substrate 10, amaintenance electrode line 28 is formed parallel to thegate line 22. Themaintenance electrode line 28 also has a two-layer structure of a firstgate wiring layer 281 and a secondgate wiring layer 282. Themaintenance electrode line 28 is overlapped with a conductor pattern formaintenance capacitor 68 connected with apixel electrode 82 to make a maintenance capacitor for improving charge retaining ability of the pixel. If the maintenance capacitance due to the overlap of thepixel electrode 82 and thegate line 22 is insufficient, themaintenance electrode line 28 may not be formed. It is common that a voltage equal to that applied to the common electrode of the upper substrate is applied to themaintenance electrode line 28. - On the
gate wiring maintenance electrode line 28, agate insulation film 30 made of silicon nitride (SiNx), etc. is formed. Thegate insulation film 30 covers thegate wiring maintenance electrode line 28. - On the
gate insulation film 30, asemiconductor pattern semiconductor pattern intermediate layer pattern - On the ohmic
contact layer pattern data wiring data wiring layer data wiring layer data wiring layer data wiring layer data wiring layer ohmic contact layer gate insulation film 30. Preferably, the firstdata wiring layer data wiring layer data line 62 formed vertically, an end part of thedata line 68 connected with one end of thedata line 62 and accepting picture signals from outside, and adata line part source electrode 65 branching from thedata line 62. It also comprises adrain electrode 66 separated from the data linepart source electrode 65 with reference to a channel part {circle around (c)}, and a conductor pattern formaintenance capacitor 64 located on amaintenance electrode line 28. In case themaintenance electrode line 28 is not formed, the conductor pattern formaintenance capacitor 64 is not formed, either. - A
contact layer pattern semiconductor pattern part 55 is identical to the data linepart drain electrode 56 is identical to thedrain electrode 66; and an intermediate layer pattern for amaintenance capacitor 58 is identical to the conductor pattern formaintenance capacitor 64. - The
semiconductor pattern contact layer pattern maintenance capacitor 48, the conductor pattern formaintenance capacitor 64 and the contact layer pattern formaintenance capacitor 58 have the same structure, but the semiconductor pattern for athin film transistor 42 is a little different from the other part of the data wiring and the contact layer pattern. That is, while thedata line part source electrode 65 is separated from thedrain electrode 66 and the intermediate layer of the data linepart 55 and the contact layer pattern for adrain electrode 56 are separated from each other at the channel part {circle around (c)} of the thin film transistor, the semiconductor pattern for athin film transistor 42 is connected at the channel part {circle around (c)} to form a channel for the thin film transistor. - On the data wiring 62, 64, 65, 66, 68, a
protection film 70 consisting of a silicon nitride film, an a-Si:C:O film or an a-Si:O:F film (low-k CVD film) deposited by the PECVD (plasma enhanced chemical vapor deposition) method or an organic insulation film is formed. Theprotection film 70 hascontact openings drain electrode 66, the end part of thedata line 64 and the conductor pattern formaintenance capacitor 68. It also has acontact opening 74 that exposes the end part of thegate line 24 together with thegate insulation film 30. - On the
protection film 70, apixel electrode 82 is made of transparent conducting material like ITO (indium tin oxide) or IZO (indium zinc oxide), and is connected with thedrain electrode 66 physically and electrically to accept picture signals. Thepixel electrode 82 is overlapped with thegate line 22 and thedata line 62 to enhance the opening ratio. However, they may not be overlapped. Thepixel electrode 82 is also connected with the conductor pattern formaintenance capacitor 64 through thecontact opening 72 to transfer picture signals to theconductor pattern 64. On the end part of thegate line 24 and the end part of thedata line 68, an end part of a supportinggate line 86 and an end part of a supportingdata line 88 connected through thecontact openings end parts gate line 86 and the end part of a supportingdata line 88 is not mandatory but optional. - Now, a method of preparing a thin film transistor substrate for a liquid crystal display having the structure of
FIG. 10 toFIG. 12 with four masks will be explained in detail, referring toFIGS. 11 to 13 andFIGS. 13 a to 20 c. - Firstly, a first
gate wiring layer gate wiring layer gate line 22, an end part of thegate line 24 and agate electrode 26, and amaintenance electrode line 28, as inFIGS. 13 a to 13 c. - Next, a
gate insulation film 30 consisting of silicon nitride, asemiconductor layer 40 and anintermediate layer 50 are continuously deposited by the chemical vapor deposition method to the thicknesses ranging from 1,500 Å to 5,000 Å, from 500 Å to 2,000 Å and from 300 Å to 600 Å, respectively, as inFIGS. 14 a and 14 b. Then, afirst conduction film 601 and asecond conduction film 602 for forming a data wiring are deposited by the sputtering method, etc. to form aconductor layer 60. Then, aphotosensitive film 110 is applied to 1 μm to 2 μm of thickness on it. - Then, the
photosensitive film 110 is exposed to light through a mask and developed to form aphotosensitive film pattern FIGS. 15 b and 15 c. In thephotosensitive film pattern first part 114 between thesource electrode 65 and thedrain electrode 66, is formed to have smaller thickness than the data wiring part (A), or thesecond part 112 wherein the data wiring 62, 64, 65, 66, 68 will be formed. In the remaining part (B), the photosensitive film is completely removed. The thickness ratio of thephotosensitive film 114 remaining in the channel part (C) and thephotosensitive film 112 remaining in the data wiring part (A) shall be different according to the etching condition. Preferably, the tackiness of thefirst part 114 is smaller than ½ of the tackiness of thesecond part 112. For example, it is preferred to be smaller than 4,000 Å. - The thickness of the photosensitive film can be varied in many ways. Typically, a slit- or lattice-type pattern is formed or a semi-transparent film is used to control light transmission to the (A) part.
- Preferably, the linewidth or gap of the slit pattern is smaller than the resolution of a light exposing means. In case a semi-transparent film is used, thin films with different transmissivity or thin films with different thickness may be used.
- If light is exposed to the photosensitive film using such a mask, polymers are completely decomposed at the part where the light contacts directly. In the part where a slit pattern or a semi-transparent film is formed, polymers are not completely decomposed. In the part where covered by a shading film, polymers are hardly decomposed. If the photosensitive film is developed, only the part where polymers are not decomposed remain. Therefore, the part exposed to a small amount of light has a smaller thickness than the part not exposed to light. The exposing time should not be too long, lest all polymers should be decomposed.
- Such a thin
photosensitive film 114 can also be formed by using a photosensitive film made of reflowable material and a usual mask having light-transmitting and non-transmitting parts, and exposing, developing and reflowing the photosensitive film, so that part of the photosensitive film flows to the part where no photosensitive film remains. - Then, the
photosensitive film pattern 114 and the films below it, that is theconductor layer 60, theintermediate layer 50 and thesemiconductor layer 40, are etched. In the data wiring part (A), the data wiring and the films below it should remain; in the channel part (C), only the semiconductor layer should remain; and in the remaining part (B), all the threelayers gate insulation film 30. - The exposed
conductor layer 60 of the remaining part B is removed to expose theintermediate layer 50 below it, as inFIGS. 16 a and 16 b. In this process, either dry etching or wet etching method can be used. Preferably, the etching is performed under a condition where theconductor layer 60 is etched and thephotosensitive film pattern photosensitive film pattern first part 114 should be thicker than for wet etching, lest thefirst part 114 should be removed to expose theconductor layer 60 below it. - As a result of this process, only the conductor layer of the channel part (C) and the and data wiring part (B), that is the conductor pattern for source/
drain 67 and the conductor pattern formaintenance capacitor 68, remain and theconductor layer 60 of the remaining part (B) is completely removed to expose theintermediate layer 50 below it, as inFIGS. 16 a and 16 b. The remainingconductor pattern source electrode 65 and thedrain electrode 66 are not separated but connected with each other. In case dry etching is used, thephotosensitive film pattern - Next, the exposed
intermediate layer 50 of the remaining part (B) and thesemiconductor layer 40 below it are removed by dry etching along with thefirst part 114 of the photosensitive film, as inFIGS. 17 a and 17 b. Preferably, the etching is performed under a condition wherephotosensitive film pattern intermediate layer 50 and thesemiconductor layer 40 are etched simultaneously (the semiconductor layer and the intermediate layer have little etching selectivity) but thegate insulation film 30 is not etched. Especially, it is preferred that thephotosensitive film pattern semiconductor layer 40 are etched with almost the same etching ratios. For example, a mixture gas of SF6 and HCl or a mixture gas of SF6 and O2 may be used to etch the two films to almost the same thickness. In case the etching ratios of thephotosensitive film pattern semiconductor layer 40 are identical, thickness of thefirst part 114 should be equal to or smaller than the sum of thicknesses of thesemiconductor layer 40 and theintermediate layer 50. - As a result, the
first part 114 of the channel part (C) is removed to expose the conductor pattern for source/drain 67 and theintermediate layer 50 and thesemiconductor layer 40 of the remaining part (B) are removed to expose thegate insulation film 30 below them, as inFIGS. 17 a and 17 b. Also, thesecond part 112 of the data wiring part (A) is etched. In this process, asemiconductor pattern drawing symbol 57 refers to an intermediate layer pattern below the conductor pattern for source/drain 67, and thedrawing symbol 58 refers to an intermediate layer pattern below the conductor pattern formaintenance capacitor 64. - Photosensitive film remnants remaining on the surface of the conductor pattern for source/
drain 67 of the channel part (C) are removed by ashing. - Next, the conductor pattern for source/
drain 67 of the channel part (C) and the intermediate layer pattern for source/drain 57 below it are removed by etching, as inFIGS. 18 a and 18 b. Both the conductor pattern for source/drain 67 and theintermediate layer pattern 57 may be dry-etched; or it is possible to wet-etch the conductor pattern for source/drain 67 and dry-etch theintermediate layer pattern 57. In the former case, a condition where the etching selection ratio of the conductor pattern for source/drain 67 and theintermediate layer pattern 57 is large is preferred. It is because if the etching selection ratio is not large, it is difficult to find the etching terminal point, so that it is difficult to control the thickness of thesemiconductor pattern 42 remaining in the channel part (C). In the latter case, a staircase shape is obtained because while the side of the conductor pattern for source/drain 67 is etched, theintermediate layer pattern 57 is hardly etched. Examples of an etching gas used to etch theintermediate layer pattern 57 and thesemiconductor pattern 42 are a mixture gas of CF4 and HCl and a mixture gas of CF4 and O2 If a mixture gas of CF4 and O2 is used, asemiconductor pattern 42 having a uniform thickness can be obtained. In this process, part of thesemiconductor pattern 42 may be removed to reduce the thickness and thesecond part 112 of the photosensitive film pattern is also etched to some degree, as seen inFIG. 15 b. The etching is performed under a condition where thegate insulation film 30 is not etched. A thick photosensitive film pattern is preferable lest thesecond part 112 should be removed to expose the data wiring 62, 64, 65, 66, 68 below it. - As a result, the
source electrode 65 and thedrain electrode 66 are separated from each other and adata wiring contact layer pattern - Lastly, the second part of the
photosensitive film 112 remaining in the data wiring part (A) is removed. Removal of thesecond part 112 may also be performed after removing the conductor pattern for source/drain 67 of the channel part (C) and before removing theintermediate layer pattern 57 below it. - As explained above, wet etching and dry etching can be used in turns or only dry etching may be used. While the latter case is convenient in that only one type of etching is used, it is difficult to find a favorable etching condition. On the other hand, while the former case is advantageous in finding a favorable etching condition, the etching process is more complicated than the latter case.
- Next, a
protection film 70 is formed by growing a silicon nitride film, an a-Si:C:O film or an a-Si:O:F film by the chemical vapor deposition (CVD) method, or by applying an organic insulation film, as inFIGS. 19 a and 19 b. - Then, the
protection film 70 is photo-etched along with thegate insulation film 30 to formcontact openings drain electrode 66, the end part of thegate line 24, the end part of thedata line 68 and the conductor pattern formaintenance capacitor 64, respectively, as inFIGS. 20 a to 20 c. Preferably, areas of thecontact openings end parts - Lastly, an ITO film or an IZO film is deposited to 400 Å. to 500 Å. of thickness and photo-etched to form a
pixel electrode 82 connected with thedrain electrode 66 and the conductor pattern formaintenance capacitor 64 and acontact supporting member 88 connected with the end part of thegate line 24, thecontact supporting member 86 and the end part of thedata line 68, as inFIGS. 11 to 13 . - Preferably, nitrogen gas is in the pre-heating process before depositing ITO or IZO to prevent formation of metal oxidation film on the
metal film contact openings - The second example of the present invention simplifies manufacture processes by forming the data wiring 62, 64, 65, 66, 68; the
contact layer pattern semiconductor pattern source electrode 65 from thedrain electrode 66, while offering the advantage of the first example of the present invention. - While the second example of the present invention also forms both the gate wiring and the data wiring in two layers, only one of the gate wiring or the data wiring may be formed in two layers, if necessary.
- Since a thin film transistor substrate in accordance with the present invention comprises self-assembled monolayers between the substrate and the metal wiring, it has a good adhesion ability to the substrate and effectively prevents diffusion of the metal wiring material to the substrate.
Claims (7)
1.-13. (canceled)
14. A method for forming self-assembled monolayers (SAMs) of a thin film transistor substrate, comprising steps of:
coating self-assembled monolayer forming material dissolved in a solvent on a substrate and heat-treating; and
depositing a copper alloy layer as a metal wiring material on the heat-treated substrate to form self-assembled monolayers having a three-dimensionally cross-linked structure between the substrate and the metal wiring,
wherein the copper alloy comprises copper and a metal that has superior anti-diffusion ability and is not significantly soluble to the substrate, and has a lower surface energy than copper.
15. The method of claim 14 ,
wherein the metal is Ag, Mg, B, Ca, Al, Li, Np, Pu, Ce, Eu, Pr, La, Nd, Sm, Zn, or any mixture thereof.
16. The method of claim 14 , wherein the self-assembled monolayers are formed by a compound selected from the group consisting of:
3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminoundecyltrimethoxysilane, aminophenyltrimethoxysilane, N-(2-aminoethylaminopropyl)trimethoxysilane, methyltrimethoxysilane, propyltriacetoxysilane, (3-mercaptopropyl)trimethoxysilane, and (3-mercaptopropyl)trimethoxysilane.
17. The method of claim 14 ,
wherein the mixing ratio of the self-assembled monolayer forming material and the solvent is 1:20 to 1:30 by weight.
18. The method of claim 14 , wherein the heat treatment is performed at a temperature of 100 to 300.degree. C.
19. The method of claim 14 ,
wherein the solvent is selected from the group consisting of methanol, ethanol, propanol, butanol, cellusolv, dimethylformamide, and water.
Priority Applications (1)
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US12/901,324 US20110024759A1 (en) | 2003-01-07 | 2010-10-08 | Thin film transistor substrate and method for forming metal wire thereof |
Applications Claiming Priority (6)
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KR1020030000757A KR100968560B1 (en) | 2003-01-07 | 2003-01-07 | Thin film transistor substrate and metal wiring method thereof |
KR10-2003-0000757 | 2003-01-07 | ||
US10/539,223 US7211898B2 (en) | 2003-01-07 | 2003-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
PCT/KR2003/000599 WO2004061991A1 (en) | 2003-01-07 | 2003-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
US11/691,455 US20070187690A1 (en) | 2003-01-07 | 2007-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
US12/901,324 US20110024759A1 (en) | 2003-01-07 | 2010-10-08 | Thin film transistor substrate and method for forming metal wire thereof |
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US11/691,455 Division US20070187690A1 (en) | 2003-01-07 | 2007-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
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US20110024759A1 true US20110024759A1 (en) | 2011-02-03 |
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US10/539,223 Expired - Lifetime US7211898B2 (en) | 2003-01-07 | 2003-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
US11/691,455 Abandoned US20070187690A1 (en) | 2003-01-07 | 2007-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
US12/901,324 Abandoned US20110024759A1 (en) | 2003-01-07 | 2010-10-08 | Thin film transistor substrate and method for forming metal wire thereof |
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US10/539,223 Expired - Lifetime US7211898B2 (en) | 2003-01-07 | 2003-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
US11/691,455 Abandoned US20070187690A1 (en) | 2003-01-07 | 2007-03-26 | Thin film transistor substrate and method for forming metal wire thereof |
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US (3) | US7211898B2 (en) |
KR (1) | KR100968560B1 (en) |
AU (1) | AU2003215959A1 (en) |
WO (1) | WO2004061991A1 (en) |
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Also Published As
Publication number | Publication date |
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KR100968560B1 (en) | 2010-07-08 |
US20060163582A1 (en) | 2006-07-27 |
WO2004061991A1 (en) | 2004-07-22 |
AU2003215959A1 (en) | 2004-07-29 |
US7211898B2 (en) | 2007-05-01 |
US20070187690A1 (en) | 2007-08-16 |
KR20040063367A (en) | 2004-07-14 |
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