US20110031504A1 - Apparatus and method for increasing thermal conductivity of a substrate - Google Patents
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- US20110031504A1 US20110031504A1 US12/924,965 US92496510A US2011031504A1 US 20110031504 A1 US20110031504 A1 US 20110031504A1 US 92496510 A US92496510 A US 92496510A US 2011031504 A1 US2011031504 A1 US 2011031504A1
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Abstract
An apparatus and method is disclosed for increasing the thermal conductivity in a substrate of a non-wide bandgap material comprising the steps of directing a thermal energy beam onto the substrate in the presence of a first doping gas for converting a region of the substrate into a wide bandgap material to enhance the thermal conductivity of the substrate for cooling the non-wide bandgap material. In one example, the invention is incorporated into a carbon rich layer formed within the wide bandgap material. In another example, the invention is incorporated into a carbon rich layer formed within the wide bandgap material having basal planes disposed to extend generally outwardly relative to an external surface of the substrate to enhance the cooling of the substrate.
Description
- 1. Field of the Invention
- This invention relates to heat transfer and heat dissipation and more particularly to an apparatus and method for increasing the thermal conductivity in a non-wide bandgap and/or wide bandgap substrate for cooling the substrate.
- 2. Background of the Invention
- Presently, silicon and gallium arsenide are the dominant conventional semiconductor materials used in the manufacture of semiconductor devices. Silicon and gallium arsenide are considered non-wide bandgap semiconductors. In contrast, wide bandgap semiconductors have superior properties including breakdown field, dielectric constant, thermal conductivity and saturated electron drift velocity. Unfortunately, wide bandgap semiconductors are expensive due to high processing costs and poor yields emanating from wafer growth through device packaging.
- Ceramic substrates having wide bandgap semiconductor compositions, such as silicon carbide (SiC) and aluminum nitride (AlN), are known to exhibit electrical properties ranging from insulating electrical properties, semiconducting electrical properties and conducting electrical properties.
- The wide-bandgap semiconductor phases of ceramics and other wide-bandgap semiconductors including diamond are used to create devices such as conductive tabs, interconnects, vias, wiring patterns, resistors, capacitors, semiconductor devices and the like electronic components by laser synthesis on the surfaces and within the body of such wide-bandgap semiconductors to thereby eliminate photolithography processes which require numerous steps and generate undesirable chemical pollutants when processing such traditional electronic devices, components and circuitry.
- It is well known that alumina (Al2O3) dominates the dielectric market as an integrating substrate or device carrier in electronics packaging. Boron nitride (BN), aluminum nitride (AlN), silicon carbide (SiC) and diamond are also of interest due to the thermal coefficient of expansion (TCE) and for the dielectric constant and higher thermal conductivity than that of aluminum oxide (Al2O3). Silicon carbide (SiC), aluminum nitride (AlN), boron nitride (BN), gallium nitride (GaN) and diamond also exhibit a wide-band gap and chemical resistance as well as exhibiting properties from a semiconductor to an insulator. These properties are of substantial interest for high temperature applications approaching 1000° C. and for aggressive environment applications. In addition, these properties are desirable for high density integrated circuit packing.
- In the prior art, metallization methods, including dry-film imaging and screen printing have been used for the production of conductive patterns on alumina. However, metal compatibility difficulties with high thermal conductivity ceramic materials such as aluminum nitride (AlN) and silicon carbide (SiC), have not been completely solved. Copper and silver paste exhibits a thermal coefficient of expansion (TCE) mismatch aggravated by high temperatures as well as being subject to oxidation that increases the resistivity. In particular, bonding of copper to aluminum nitride (AlN) has proved to be nontrivial. Alumina or stoichiometric aluminum oxynitride (AlON) coatings must be developed on the aluminum nitride (AlN) surface through passivation processes. These passivation processes have poor reproducibility. Thus, the direct laser synthesis of conductors in aluminum nitride (AlN), silicon carbide (SiC) and diamond substrates appears to provide solutions to this long standing prior art problem with regard to metallization and for more simple processing techniques for creating devices and circuitry that are compatible with selected ceramic substrates, while satisfying the need for higher temperature, aggressive environment, and higher density integrated circuit packaging applications.
- Discussion of wide bandgap materials and the processing thereof are discussed in U.S. Pat. No. 5,145,741; U.S. Pat. No. 5,391,841; U.S. Pat. No. 5,793,042; U.S. Pat. No. 5,837,607; U.S. Pat. No. 6,025,609; U.S. Pat. No. 6,054,375; U.S. Pat. No. 6,271,576, U.S. Pat. No. 6,670,693, U.S. Pat. No. 6,930,009 and U.S. Pat. No. 6,939,748 are hereby incorporated by reference into the present application.
- Therefore, it is an object of this invention to provide a process for forming a wide bandgap material within a non-wide bandgap substrate to enhance the thermal conductivity and heat dissipation of the substrate.
- Another object of this invention is to provide a process for forming a thermal conducting material within a wide bandgap material to enhance the thermal conductivity and heat dissipation thereof.
- Another object of this invention is to provide a non-wide bandgap substrate with a wide bandgap material formed therein for enhancing the thermal conductivity and heat dissipation of the substrate.
- Another object of this invention is to provide a wide bandgap substrate with a thermal conducting material formed therein for enhancing the thermal conductivity and heat dissipation of the substrate.
- Another object of this invention is to provide a thermal interface material that forms a continuous or diffuse boundary as opposed to a discrete boundary and matches the coefficient of thermal expansion of the parent substrate.
- Another object of this invention is to provide a process that does not introduce defects into the parent substrate nor the thermal interface material.
- The foregoing has outlined some of the more pertinent objects of the present invention. These objects should be construed as being merely illustrative of some of the more prominent features and applications of the invention. Many other beneficial results can be obtained by modifying the invention within the scope of the invention. Accordingly other objects in a full understanding of the invention may be had by referring to the summary of the invention, the detailed description describing the preferred embodiment in addition to the scope of the invention defined by the claims taken in conjunction with the accompanying drawings.
- The present invention is defined by the appended claims with specific embodiments being shown in the attached drawings. For the purpose of summarizing the invention, the invention relates to the process of increasing the thermal conductivity in a substrate of a non-wide bandgap material comprising the steps of providing a substrate of a non-wide bandgap material having a first and a second region. A first doping gas is applied to the first region of the substrate. A first thermal energy beam is directed onto the first region of the substrate in the presence of the first doping gas for converting the first region of the substrate into a wide bandgap material to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the non-wide bandgap material.
- In an alternate arrangement of this invention, a first thermal energy beam is directed onto the first region of the substrate in the presence of the first doping gas for converting the first region of the substrate into a wide bandgap material. A second doping gas is applied to the wide bandgap material. A second thermal energy beam is directed onto the wide bandgap material in the presence of the second doping gas for converting a portion of the wide bandgap material into a thermal conducting material to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the non-wide bandgap material.
- In an alternate arrangement of this invention, a first thermal energy beam is directed onto the first region of the substrate in the presence of the first doping gas for converting the first region of the substrate into a wide bandgap material. A second thermal energy beam is directed onto the wide bandgap material for converting a portion of the wide bandgap material into a thermal conducting material to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the non-wide bandgap material.
- In an alternate arrangement of this invention, a first thermal energy beam is directed onto the first region of the substrate in the presence of the first doping gas for converting the first region of the substrate into a wide bandgap material. A second thermal energy beam is directed onto the wide bandgap material simultaneously converting a portion of the wide bandgap material into a thermal conducting material and orienting the crystal lattice to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the non-wide bandgap material.
- In another alternate arrangement of the invention, a second thermal energy beam is directed onto the wide bandgap material in the presence of the second doping gas for converting a portion of the wide bandgap material into a thermal conducting material having an atomic structure defining basal planes. A third thermal energy beam is focused inside the thermal conducting material for aligning the basal planes of the atomic structure of the thermal conducting material to extend generally outwardly relative to an external surface of the substrate to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the non-wide bandgap material.
- In another embodiment of the invention, the invention is incorporated into the process of increasing the thermal conductivity in a silicon substrate comprising the steps of providing a substrate of a silicon material having a first and a second region. A first carbon donating doping gas is applied to the first region of the silicon substrate. A first thermal energy beam is directed onto the first region of the silicon substrate in the presence of the first carbon donating doping gas for converting the first region of the silicon substrate into silicon carbide to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the silicon substrate.
- In an alternate arrangement of this invention, a second reacting gas of carbon monoxide or carbon dioxide is applied to the silicon carbide. A second laser energy beam is directed onto the silicon carbide in the presence of a carbon monoxide-carbon dioxide gas mixture to diffuse silicon to the surface and react the silicon with carbon dioxide to form silicon oxide gas thereby creating a layer of silicon carbide having lattice vacancies. A third carbon donating doping gas is applied to the layer of silicon carbide having lattice vacancies. A third thermal energy beam is directed onto the layer of silicon carbide having lattice vacancies in the presence of third carbon donating doping gas to diffuse carbon into the lattice vacancies to create a carbon rich layer to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the silicon substrate.
- In another alternate arrangement of the invention, a second laser energy beam is directed onto the silicon carbide in the presence of a carbon monoxide-carbon dioxide gas mixture to diffuse silicon to the surface and react the silicon with carbon dioxide to form silicon oxide gas thereby creating a layer of silicon carbide having lattice vacancies. A third carbon donating doping gas is applied to the layer of silicon carbide having lattice vacancies. A third thermal energy beam is directed onto the layer of silicon carbide having lattice vacancies in the presence of third carbon donating doping gas to diffuse carbon into the lattice vacancies to create a carbon rich layer having an atomic structure defining basal planes. A fourth thermal energy beam is focused inside the carbon rich layer for aligning the basal planes of the atomic structure of the carbon rich layer to extend generally outwardly from the substrate to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the silicon substrate.
- In another embodiment of the invention, the invention is incorporated into the process of increasing the thermal conductivity in a substrate of a wide bandgap material comprising the steps of providing a substrate of a wide bandgap material having a first and a second region. A doping gas is applied to the wide bandgap material. A thermal energy beam is directed onto the wide bandgap material in the presence of the doping gas for converting a portion of the wide bandgap material into a thermal conducting material to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the wide bandgap material.
- In an alternate arrangement of this invention, a first thermal energy beam is directed onto the wide bandgap material in the presence of the first doping gas for converting a portion of the wide bandgap material into a thermal conducting material having an atomic structure defining basal planes. A second thermal energy beam is focused inside the thermal conducting material for aligning the basal planes of the atomic structure of the thermal conducting material to be generally perpendicular to an external surface of the substrate to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the wide bandgap material.
- The invention is also incorporated into a non-wide bandgap substrate having enhanced thermal dissipating properties comprising a substrate of a non-wide bandgap material having a first and a second region. A wide bandgap material is formed in situ within the first region of the substrate.
- In an alternate arrangement of this invention, a thermal conducting material is formed in situ within a portion of the wide bandgap material to enhance the thermal conductivity between the first and second regions of the substrate for dissipating heat from the second region of the substrate.
- In an another alternate arrangement of this invention, a thermal conducting material having an atomic structure defining basal planes is formed in situ within a portion of the wide bandgap material with the basal planes being aligned to extend from an external surface of the substrate to enhance the thermal conductivity between the first and second regions of the substrate for dissipating heat from the second region of the substrate.
- In another embodiment of the invention, the invention is incorporated into a silicon substrate having enhanced thermal dissipating properties comprising a substrate of a silicon material having a first and a second region. A silicon carbide material is formed in situ within the first region of the substrate.
- In an alternate arrangement of this invention, a silicon substrate having a thermal conducting material is formed in situ within a portion of the silicon carbide material to enhance the thermal conductivity between the first and second regions of the substrate for dissipating heat from the second region of the substrate.
- In an another alternate arrangement of this invention, a thermal conducting material having an atomic structure defining basal planes is formed in situ within a portion of the silicon carbide material with the basal planes being aligned generally perpendicular to an external surface of the substrate to enhance the thermal conductivity between the first and second regions of the substrate for dissipating heat from the second region of the substrate.
- In another embodiment of the invention, the invention is incorporated into a silicon carbide substrate having enhanced thermal dissipating properties comprising a substrate of a silicon carbide material having a first and a second region. A thermal conducting material is formed in situ within a first region of the silicon carbide material to enhance the thermal conductivity between the first and the second regions of the substrate for dissipating heat from the second region of the substrate.
- In an alternate arrangement of this invention, a thermal conducting material having an atomic structure defining basal planes is formed in situ within the first region of the silicon carbide material with the basal planes being aligned to extend generally outwardly relative to an external surface of the substrate to enhance the thermal conductivity between the first and the second regions of the substrate for dissipating heat from the second region of the substrate.
- The foregoing has outlined rather broadly the more pertinent and important features of the present invention in order that the detailed description that follows may be better understood so that the present contribution to the art can be more fully appreciated. Additional features of the invention will be described hereinafter which form the subject of the claims of the invention. It should be appreciated by those skilled in the art that the conception and the specific embodiments disclosed may be readily utilized as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the appended claims.
- For a fuller understanding of the nature and objects of the invention, reference should be made to the following detailed description taken in connection with the accompanying drawings in which:
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FIG. 1 is a side view of an air-tight chamber with a thermal energy beam impinging on a non-wide bandgap material for forming a layer of a wide bandgap material in the non-wide bandgap material; -
FIG. 2 is an enlarged isometric view of the layer of the wide bandgap material formed in the non-wide bandgap material; -
FIG. 3 is an enlarged partial sectional view of a first embodiment of silicon carbide (SiC) wide bandgap material formed in a silicon (Si) non-wide bandgap material; -
FIG. 4 is an enlarged partial sectional view of a second embodiment of an aluminum nitride (AlN) wide bandgap material formed in an alumina (Al2O3) non-wide bandgap material; -
FIG. 5 is an enlarged partial sectional view of a third embodiment of a silicon carbide (SiC) wide bandgap material formed in a silica (SiO2) non-wide bandgap material; -
FIG. 6 is an enlarged partial sectional view of a fourth embodiment of a diamond like carbon material formed in the silicon carbide (SiC) wide bandgap material defined in a silica (SiO2) non-wide bandgap material; -
FIG. 7 is an enlarged isometric view of a fifth embodiment of an improved component formed in the wide bandgap material; -
FIG. 8 is a sectional view along line 8-8 inFIG. 7 ; -
FIG. 9 is a sectional view along line 9-9 inFIG. 7 ; -
FIG. 10 is an enlarged isometric view of a sixth embodiment of an improved semiconductor device formed in the wide bandgap material; -
FIG. 11 is a sectional view along line 11-11 inFIG. 10 ; -
FIG. 12 is a sectional view along line 12-12 inFIG. 10 ; -
FIG. 13 is a side view of an apparatus similar toFIG. 1 for forming further embodiments of the invention; -
FIG. 14 is a first step in the process of increasing the thermal conductivity in a non-wide bandgap substrate illustrating the scanning of a first thermal energy beam across the substrate in the presence of a doping gas to create a layer of wide bandgap material; -
FIG. 15 is a second step in the process of increasing the thermal conductivity in a substrate illustrating the scanning of a second thermal energy beam across the layer of wide bandgap material create a layer of thermal conducting material in the wide bandgap material; -
FIG. 16 is a third step in the process of increasing the thermal conductivity in a substrate illustrating the focusing of a third thermal energy beam inside of the thermal conducting material to aligning the molecular planes of the thermal conducting material to extend outwardly from the substrate; -
FIG. 17 illustrates the cutting is a substrate into a plurality of dies; -
FIG. 18 is a side sectional view of one of the plurality of dies ofFIG. 17 incorporating electronic components with the increasing the thermal conductivity in a substrate cooling the electronic components; -
FIG. 19 is a side sectional view of a convention die of the prior art incorporated into a conventional heat spreader and a conventional heat sink of the prior art; -
FIG. 20 is a side sectional view of a silicon substrate; -
FIG. 21 is a side sectional view of the silicon substrate ofFIG. 20 with a layer of silicon carbide material deposited onto the silicon substrate by a conventional vapor deposition process; -
FIG. 22 is a side sectional view of the substrate ofFIG. 21 with a layer of carbon thermal conducting material deposited onto the silicon carbide material by a conventional vapor deposition process; -
FIG. 23 is a magnified view of a portion ofFIG. 22 illustrating the alignment of the molecular planes of the carbon thermal conducting material; -
FIG. 24 is a side sectional view of a silicon substrate; -
FIG. 25 is a side sectional view of the silicon substrate ofFIG. 24 with a layer of the silicon material being converted into silicon carbide material by a thermal energy beam in the presence of a doping gas; -
FIG. 26 is a side sectional view of the substrate ofFIG. 25 with a layer of the silicon carbide material being converted into a carbon thermal conducting material by a thermal energy beam in the presence of a reacting gas; -
FIG. 27 is a magnified view of a portion ofFIG. 26 illustrating the alignment of the molecular planes of the carbon thermal conducting material; -
FIG. 28 is a side sectional view of the substrate ofFIG. 27 with the molecular planes of the layer of carbon thermal conducting material being oriented to be generally perpendicular to an external surface of the substrate formed by focusing a thermal energy beam within the layer of carbon thermal conducting material; -
FIG. 29 is a magnified view of a portion ofFIG. 28 illustrating the orientation of the molecular planes of the carbon thermal conducting material; -
FIG. 30 is a side sectional view of a silicon carbide substrate; -
FIG. 31 is a side sectional view of the substrate ofFIG. 30 with a layer of the silicon carbide material being converted into a carbon thermal conducting material by a thermal energy beam in the presence of a reacting gas; -
FIG. 32 is a side sectional view of the substrate ofFIG. 31 with the molecular planes of the layer of carbon thermal conducting material being orientated to extend from the substrate formed by focusing a thermal energy beam within the layer of carbon thermal conducting material; -
FIG. 33 is a graph of the thermal conductivity of different materials; and -
FIG. 34 is a list of the thermal conductivity of various materials. - Similar reference characters refer to similar parts throughout the several Figures of the drawings.
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FIG. 1 is a side view of anapparatus 5 for forming a layer of awide bandgap material 10 in anon-wide bandgap material 15. The non-wide-bandgap material 15 is shown as asubstrate 20 located in an air-tight chamber 30. Thechamber 30 has an inlet andvalve combination 31 and outlet andvalve combination 32 connected to the side wall of thechamber 30 for injecting and removing gases into and therefrom, respectively. Thechamber 30 includes anairtight transmission window 34. Thechamber 30 is disposed on asupport member 36 forming an airtight seal therewith. -
FIG. 2 is an enlarged isometric view of thewide bandgap material 10 formed in thesubstrate 20 shown inFIG. 1 . Thewide bandgap material 10 defines a first and asecond surface peripheral edge 13. Thesubstrate 20 defines a first and asecond surface peripheral edge 23. Although thesubstrate 20 is shown as a square, the present invention is not limited by the physical configuration of thesubstrate 20 as shown herein. - A
thermal energy beam 40 is shown emanating from asource 42 and passing through theairtight transmission window 34 to impinge on thefirst surface 21 of thesubstrate 20. In one example, thethermal energy beam 40 is a beam of charged particles such as a beam of electrons or a beam of ions. In another example, thethermal energy beam 40 is a beam of electromagnetic radiation such as a laser beam. Examples of a suitable source of the laser beam include a Nd:YAG laser, a frequency double 2ω Nd:YAG laser or an Excimer laser. - The
thermal energy beam 40 is scanned in two dimensions across thefirst surface 21 of thesubstrate 20 to form thewide bandgap material 10. In this example, thewide bandgap material 10 is shown partially formed within thefirst surface 21 of thesubstrate 20 after a partial scan of thethermal energy beam 40 across thefirst surface 21 of thesubstrate 20. - The
first surface 11 of thewide bandgap material 10 is coincident with thefirst surface 21 of the widebandgap semiconductor substrate 20 with the remainder of thewide bandgap material 10 including thesecond surface 12 and theperipheral surface 13 being embedded between first andsecond surfaces substrate 20. It should be emphasized that all material interfaces are not discrete but are continuous or diffuse. Lines are used in the figures to show regions only as a convenience. - The
substrate 20 may be formed as a monolith or a thin film substrate having suitable properties for forming thewide bandgap material 10. Thenon-wide bandgap material 15 has a bandgap equal to or less than two electron volts (2 eV). The widebandgap bandgap material 10 has a bandgap greater than two electron volts (2 eV). - Preferably, the
non-wide bandgap material 15 is sensitive to a thermal conversion process for transforming a layer of thenon-wide bandgap material 15 into thewide bandgap material 10. In one example, thenon-wide bandgap material 15 is selected from the group consisting of a silicon material (Si), a gallium arsenide material (GaAs), an alumina material (Al2O3), a silica material (SiO2). Preferably, thenon-wide bandgap material 15 is capable of being transformed from anon-wide bandgap material 15 into thewide bandgap material 10 and is capable of being subsequently transformed into an electrical component or device upon further irradiating by thethermal energy beam 40. - Table 1 contrasts various properties of two popular non-wide bandgap semiconductor materials namely silicon (Si) and gallium arsenide (GaAs) with wide bandgap semiconductors namely silicon carbide (SiC) and diamond.
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TABLE 1 Gallium 6H Silicon Property Silicon Arsenide Carbide Diamond Band Gap 1.12 eV 1.424 eV 3 eV 5.45 eV Breakdown field 0.3 MV/cm 0.4 MV/ cm 3 MV/ cm 10 MV/cm Dielectric constant 11.7 12.9 10 5.5 Thermal Conductivity 130 W/K-cm 55 W/K-cm 500 W/K-cm 2200 W/K-cm Saturated electron 1 × 107 cm/sec 1 × 107 cm/ sec 2 × 107 cm/sec 2.7 × 107 cm/sec drift velocity - Table 1 illustrates the advantageous properties of
wide bandgap materials 10. Unfortunately,wide bandgap materials 10 are currently expensive due to high processing costs and poor yields emanating from wafer growth through device packaging. The present invention trans-forms a layer of thenon-wide bandgap material 15 into awide bandgap material 10 to provide the advantages of the properties of thewide bandgap material 10 with the cost advantages of thenon-wide bandgap material 15. - The present invention may utilize a conventional semiconductor material such as silicon (Si) or gallium arsenide (GaAs) as the
non-wide bandgap material 15. In the alternative, the present invention may utilize a low cost ceramic material such as alumina (Al2O3) or a low cost glass material such as silica (SiO2). -
FIG. 3 is an enlarged sectional view of a first embodiment of the invention illustrating awide bandgap material 10A formed in thesubstrate 20A. In this example, thenon-wide bandgap material 15A of thesubstrate 20A is a silicon (Si) material whereas thewide bandgap material 10A is silicon carbide (SiC). - The silicon (Si)
non-wide bandgap material 15A is converted into the silicon carbide (SiC)wide bandgap material 10A as thethermal energy beam 40 scans across thefirst surface 21A of thesubstrate 20A. Thethermal energy beam 40 scans across thefirst surface 21A of thesubstrate 20A in an atmosphere of methane gas or acetylene gas. Thethermal energy beam 40 heats the silicon atoms of thenon-wide bandgap material 15A. The heated silicon atoms of thenon-wide bandgap material 15A react with the carbon atoms of the methane gas or acetylene gas atmosphere to create the silicon carbide (SiC)wide bandgap material 10A. -
FIG. 4 is an enlarged sectional view of a second embodiment of the invention illustrating awide bandgap material 10B formed in thesubstrate 20B. In this example, thenon-wide bandgap material 15B of thesubstrate 20B is aluminum oxide (Al2O3) material whereas thewide bandgap material 10B is aluminum nitride (AlN). - The aluminum oxide (Al2O3)
non-wide bandgap material 15B is converted into the aluminum nitride (AlN)wide bandgap material 10B as thethermal energy beam 40 scans across thefirst surface 21B of thesubstrate 20B. Thethermal energy beam 40 scans across thefirst surface 21B of thesubstrate 20B in an atmosphere of nitrogen to create the aluminum nitride (AlN). - Gallium arsenide (GaAs) non-wide bandgap material (thermal conductivity 55 W/m-K) is converted to gallium nitride (GaN) wide bandgap material (thermal conductivity 130 W/m-K) by this method shown for converting aluminum oxide to aluminum nitride.
- Typically, the formation of aluminum nitride (AlN) is not chemical and thermodynamically feasible because of the preferred affinity of aluminum for oxygen. A reacting getter such as source of heated carbon is used to remove the oxygen from reacting with the aluminum since oxygen has preferred reactions with carbon. The carbon can be a solid source or a gaseous source such as methane or acetylene. With the gaseous carbon sources the
thermal energy beam 40 would be conducted under a mixed atmosphere of methane and nitrogen in simultaneous or subsequent steps. - The thermal carbon process described above or a similar process is used only when the chemistry of the existing substrate is more stable than that of the desired or new substrate surface composition. Once the oxygen is removed, the
surface 21B of thesubstrate 20B can be scanned with thethermal energy beam 40 in the presence of a doping nitrogen gas to create aluminum nitride (AlN). Subsequently, the aluminum nitride (AlN)wide bandgap material 10B may be converted to semiconductors and conductors, or other device in accordance with the teaching of my previously mentioned U.S. patents. -
FIG. 5 is an enlarged sectional view of a third embodiment of the invention illustrating awide bandgap material 10C formed in thesubstrate 20C. In this example, thenon-wide bandgap material 15C of thesubstrate 20C is a silica (SiO2) material whereas thewide bandgap material 10C is silicon carbide (SiC). - The silica (SiO2)
non-wide bandgap material 15C is converted into the silicon carbide (SiC)wide bandgap material 10C as thethermal energy beam 40 scans across thefirst surface 21C of thesubstrate 20C. Thethermal energy beam 40 scans across thefirst surface 21C of thesubstrate 20C in an atmosphere of methane gas or acetylene gas. Thethermal energy beam 40 heats the silicon atoms of thenon-wide bandgap material 15C. The heated silicon atoms of thenon-wide bandgap material 15C react with the carbon atoms of the methane gas or acetylene gas atmosphere to create the silicon carbide (SiC)wide bandgap material 10C. -
FIG. 6 is an enlarged sectional view of a fourth embodiment of the invention illustrating acomponent 50D defined in awide bandgap material 10D formed in thesubstrate 20D. In this example, thecomponent 50D is a diamond like carbon material (DLC) formed in the silicon carbide (SiC)wide bandgap material 10D defined in a silica (SiO2)non-wide bandgap material 15D. The silica (SiO2)non-wide bandgap material 15D is converted into the silicon carbide (SiC)wide bandgap material 10D as thethermal energy beam 40 scans across thefirst surface 21D of thesubstrate 20D as set forth with reference toFIG. 3 . - After the silica (SiO2)
non-wide bandgap material 15D is converted into the silicon carbide (SiC)wide bandgap material 10D, the silicon carbide (SiC) is converted into the diamond like carbon material (DLC) by selectively removing silicon atoms to create vacancies. The vacancies are then filled with carbon creating the diamond like carbon material (DLC). Thethermal energy beam 40 irradiation of the SiC region in a CO/CO2 containing atmosphere diffuses silicon to the surface where the silicon reacts with CO2 to form SiO gas. An increased number of vacancies are left behind in the lattice. - An excimer laser (50 mJ/pulse, 10. Hz pulse repetition rate, 60 pulses, 193 nm wave-length, 20 ns pulse time, CO (partial pressure)/CO2 (partial pressure)=5×104) creates the temperature range 2000-2300° C. necessary to energize silicon (SiO2) self diffusion in silicon carbide (SiC). Carbon is then diffused into the substrate to fill the vacancies by laser irradiation, for example by (Nd:YAG, excimer etc.) in a methane or acetylene atmosphere to dissociate the hydrocarbon and drive (diffuse) atomic carbon into the silicon carbide (SiC) and if necessary orient or recrystallize the crystal structure.
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FIG. 7 is an enlarged isometric view of a fifth embodiment of the invention illustrating asemiconductor device 50E defined in thewide bandgap material 10E formed in thesubstrate 20E. Thesemiconductor device 50E may be one or more of a variety of devices such as an active or passive electrical device, a photonic device, an optical device, a sensor device, a spintronic device or any other suitable semiconductor device. In this example, thesemiconductor device 50E is shown as afirst semiconductor device 51E and asecond semiconductor device 52E. -
FIG. 8 is a sectional view along line 8-8 inFIG. 7 illustrating thefirst semiconductor device 51E ofFIG. 7 . Thefirst semiconductor device 51E is defined in thewide bandgap material 10E. Thefirst semiconductor device 51E is connected by anelectrode 61E to afirst conductor 71E. Anelectrode 62E connects thefirst semiconductor device 51E to aconnector 73E. -
FIG. 9 is a sectional view along line 9-9 inFIG. 7 illustrating thesecond semiconductor device 52E ofFIG. 7 . Thesecond semiconductor device 52E is defined in thewide bandgap material 10E. Thesecond semiconductor device 52E is connected by anelectrode 63E to asecond conductor 72E. An electrode ME connects thesecond semiconductor device 52E to theconnector 73E. - Preferably, the first and/or
second semiconductor device wide bandgap material 10E by scanning thethermal energy beam 40 across selected portions of thewide bandgap material 10E in the presence of a doping atmosphere to form the first and/orsecond semiconductor device second semiconductor device -
FIG. 10 is an enlarged isometric view of a sixth embodiment of the invention illustrating afirst semiconductor device 51F defined in thewide bandgap material 10F and asecond semiconductor device 52F defined in thenon-wide bandgap material 15F. -
FIG. 11 is a sectional view along line 11-11 inFIG. 10 illustrating thefirst semiconductor device 51F ofFIG. 10 . Thefirst semiconductor device 51F is defined in thewide bandgap material 10F. Thefirst semiconductor device 51F is connected by anelectrode 61F to afirst conductor 71F. Anelectrode 62F connects thefirst semiconductor device 51F to aconnector 73F. Thefirst semiconductor device 51F may be one or more of a variety of devices such as an active or passive electrical device, a photonic device, an optical device, a sensor device, a spintronic device or any other suitable semiconductor device. - Preferably, the
first semiconductor device 51F is formed in thewide bandgap material 10F by scanning thethermal energy beam 40 across selected portions of thewide bandgap material 10F in the presence of a doping atmosphere to form thefirst semiconductor device 51F. In the alternative, thefirst semiconductor device 51F may be formed in a conventional manner as should be well known in the art. -
FIG. 12 is a sectional view along line 12-12 inFIG. 10 illustrating thesecond semiconductor device 52F ofFIG. 10 . Thesecond semiconductor device 52F is defined in thenon-wide bandgap material 15F. Thesecond semiconductor device 52F is connected by anelectrode 63F to asecond conductor 72F. Anelectrode 64F connects thesecond semiconductor device 52F to theconnector 73F. - Preferably, the
second semiconductor device 52F is formed in thenon-wide bandgap material 15F in a conventional manner as should be well known in the art. In the alternative, thesecond semiconductor device 52E may be formed by scanning thethermal energy beam 40 across selected portions of thenon-wide bandgap material 15F in the presence of a doping atmosphere to form thesecond semiconductor device 52F. - The
thermal energy beam 40 conversion and doping technology can be applied to the fabrication of conductors, different semiconductor and insulator phases in silicon carbide (SiC). Conductors can be fabricated by doping titanium into silicon carbide (SiC) by laser scanning in a titanium tetra chloride, or other titanium metallo-organic gas atmosphere. Different semiconductor phases can be created by scanning a material with thethermal energy beam 40 in an atmosphere of nitrogen (n-type), phosphine (n-type) or di-borane (p-type), trimethylaluminum (p-type) etc. Insulators can be created by scanning a material with thethermal energy beam 40 in an atmosphere of oxygen. -
FIG. 13 is a side view of an apparatus similar toFIG. 1 for increasing the thermal conductivity in asubstrate 20G formed from anon-wide bandgap material 15G. Thesubstrate 20G is located in an air-tight chamber 30G. Thechamber 30G has an inlet andvalve combination 31G and outlet andvalve combination 32G connected to the side wall of thechamber 30G for injecting and removing gases such as doping and/or reacting gasses. Anairtight transmission window 34G is located within thechamber 30G. Thechamber 30G is disposed on asupport member 36G forming an airtight seal therewith. - A
thermal energy beam 40G is shown emanating from asource 42G and passing through theairtight transmission window 34G to impinge on thefirst surface 21G of thesubstrate 20G. Thethermal energy beam 40G may comprise a beam of charged particles such as a beam of electrons or a beam of ions or a beam of electromagnetic radiation such as a laser beam. Examples of a suitable source of the laser beam include a Nd:YAG laser, a frequency double 2ω Nd:YAG laser or an Excimer laser. -
FIG. 14 is an enlarged isometric view of thesubstrate 20G of thenon-wide bandgap material 15G shown inFIG. 13 . Thenon-wide bandgap material 15G is indicated as NON-WBG. Thesubstrate 20G defines a first and asecond surface peripheral edge 23G. In this example, a first region of thesubstrate 20G is located in proximity to thefirst surface 21G of thesubstrate 20G whereas a second region of thesubstrate 20G is located in proximity to thesecond surface 22G of thesubstrate 20G. - The
substrate 20G may be formed as a monolith or athin film substrate 20 having suitable properties for forming thewide bandgap material 10G. Thenon-wide bandgap material 15G has a bandgap equal to or less than two electron volts (2 eV). - The
non-wide bandgap material 15G is sensitive to a thermal conversion process. Preferably, thenon-wide bandgap material 15G can be transformed from thenon-wide bandgap material 15G into thewide bandgap material 10G. Furthermore, the transformedwide bandgap material 10G can be transformed further into athermal conducting material 50G upon further irradiating by athermal energy beam 40G. In one example, thenon-wide bandgap material 15G is selected from the group consisting of a silicon material (Si), a gallium arsenide material (GaAs), an alumina material (Al2O3), a silica material (SiO2). -
FIG. 14 illustrates a first step in the process of increasing the thermal conductivity in thenon-wide bandgap substrate 20G. A doping gas is applied to thefirst surface 21G of thenon-wide bandgap substrate 20G within the air-tight chamber 30G. In one example, the doping gas is selected from the group consisting of methane, acetylene and nitrogen. - The
thermal energy beam 40G is scanned in two dimensions as indicated by thearrows 17G across thefirst surface 21G of thesubstrate 20G in the presence of the doping gas to form thewide bandgap material 10G within the first region of thesubstrate 20G. In this example, thewide bandgap material 10G is shown partially formed within the first region of thesubstrate 20G adjacent to thefirst surface 21G of thesubstrate 20G. Thewide bandgap material 10G is indicated as WBG. Thethermal energy beam 40G continues to scan in two dimensions as indicated by thearrows 17G until the entire first region of thesubstrate 20G is converted into thewide bandgap material 10G. - The
wide bandgap material 10G defines a first and asecond surface peripheral edge 13G. Thefirst surface 11G of thewide bandgap material 10G is coincident with thefirst surface 21G of thesubstrate 20G with the remainder of thewide bandgap material 10G being embedded between first andsecond surfaces substrate 20G. Thewide bandgap material 10G has a higher thermal conductivity than thenon-wide bandgap substrate 20G. Thewide bandgap material 10G embedded within thesubstrate 20G enhances the thermal conductivity between the first and the second regions of thesubstrate 20G. - The
wide bandgap material 10G has a bandgap greater than two electron volts (2 eV). In one example, thewide bandgap material 10G is selected from the group consisting of silicon carbide, diamond, diamond like carbon, aluminum nitride, boron nitride and gallium nitride. -
FIGS. 13-14 illustrates a line interface separating thewide bandgap material 10G and thenon-wide bandgap material 15G. However, it should be appreciated that the actual interface between thewide bandgap material 10G and thenon-wide bandgap material 15G is a continuous or a diffuse interface. -
FIG. 15 illustrates the forming ofthermal conducting material 50G within thewide bandgap material 10G of thesubstrate 20G. Thethermal conducting material 50G is indicated as CM. A second doping gas is applied to thewide bandgap material 10G. A secondthermal energy beam 40G′ is scanned across thewide bandgap material 10G of thesubstrate 20G. The irradiation of thewide bandgap material 10G of thesubstrate 20G by the secondthermal energy beam 40G′ in the presence of the second doping gas converts a portion of thewide bandgap material 10G into a layer ofthermal conducting material 50G. The secondthermal energy beam 40G′ continues to scan in two dimensions as indicated by thearrows 17G until the entire first region of thesubstrate 20G is converted into thethermal conducting material 50G. - The
thermal conducting material 50G defines a first and asecond surface peripheral edge 53G. Thefirst surface 51G of thethermal conducting material 50G is coincident with thefirst surface 11G of thewide bandgap material 10G with the remainder of thethermal conducting material 50G being embedded between first andsecond surfaces wide bandgap material 10G. - The
thermal conducting material 50G has a higher thermal conductivity than thewide bandgap material 10G. Thethermal conducting material 50G embedded within thewide bandgap material 10G further enhances the thermal conductivity between the first and the second regions of thesubstrate 20G. - In many examples, the
thermal conducting material 50G is formed within thewide bandgap material 10G having molecular planes includingbasal planes 55G. The secondthermal energy beam 40G′ forms thebasal planes 55G that are disposed parallel to an external surface of thesubstrate 20G. In this example, the external surface of thesubstrate 20G is shown as thefirst surface 21G of thesubstrate 20G. -
FIG. 16 illustrates the focusing of a thirdthermal energy beam 40G″ inside of thethermal conducting material 50G. The thirdthermal energy beam 40G″ is scanned in two dimensions across thethermal conducting material 50G while simultaneously altering the focal point of the thirdthermal energy beam 40G″ inside of thethermal conducting material 50G. Initially, the focal point of the third thermal energy beam 400″ is positioned inside of thethermal conducting material 50G with the focal point being gradually moved toward the external surface or thefirst surface 21G of thesubstrate 20G. - The altering of the focal point of the third
thermal energy beam 40G″ inside of thethermal conducting material 50G orientates thebasal planes 55G of the thermal conducting material 500 to extend from thesubstrate 20G. In this example, the altering of the focal point of the thirdthermal energy beam 40G″ inside of thethermal conducting material 50G aligns thebasal planes 55G to be generally perpendicular to the external surface or thefirst surface 21G of thesubstrate 20G. The alignment of thebasal planes 55G of thethermal conducting material 50G to extend from the external surface of thesubstrate 20G further enhances the thermal conductivity between the first and the second regions of thesubstrate 20G. Thethermal conducting material 50G having alignedbasal planes 55G is indicated as ACM. -
FIG. 17 illustrates thesubstrate 20G severed into a plurality of dies 60G. Each of the plurality of dies 60G defines afirst region 61G and asecond region 62G. Thefirst region 61G comprises thethermal conducting material 50G whereas thesecond region 62G comprises thenon-wide bandgap material 15G. -
FIG. 18 is a side sectional view of one of the plurality of dies 60G ofFIG. 17 . Thebasal planes 55G of thethermal conducting material 50G act as a plurality ofmicro fins 65G extending in a parallel relationship to be orientated generally perpendicular to the external surface shown as thefirst surface 21G of thesubstrate 20G. The plurality ofmicro fins 65G effectively increase the surface area offirst region 61G for increasing the transfer of heat between thefirst region 61G of thedie 60G and an ambient such as ambient air or ambient vacuum. The plurality ofmicro fins 65G creates an integral heat exchanger with thesubstrate 20G. - The
die 60G may be further fabricated into various types of devices such as sensors, detectors, electrical components, integrated circuits and the like. In this example, pluralelectronic components non-wide bandgap material 15G. Preferably, the pluralelectronic components non-wide bandgap material 15G in a conventional manner as should be well known in the art. In the alternative, the pluralelectronic components thermal energy beam 40 across selected portions of thenon-wide bandgap material 15G in the presence of a doping atmosphere to form the pluralelectronic components - It is evident that increased thermal conductivity of the dies 60G may transfer heat from the plural
electronic components second region 62G to thefirst region 61G to cool the pluralelectronic components die 60G can transfer heat from thefirst region 61G to heat the pluralelectronic components second region 62G. -
FIG. 19 is a side sectional view of a convention die 60H of the prior art incorporated into aconventional heat spreader 80H and aconventional heat sink 90H of the prior art. Thedie 60H defines afirst region 61H and asecond region 62H. Pluralelectronic components second region 62H of thedie 60H. - The
conventional heat spreader 80H defines afirst surface 81H and asecond surface 82H whereas theconventional heat sink 90H defines afirst surface 91H and asecond surface 92H. Thefirst surface 91H of the conventional heat sink 90 defines a plurality offins 95H. - Heat generated by the plural
electronic components second region 62H to thefirst region 61H of thedie 60H. Heat from thefirst region 61H of thedie 60H is transferred through theheat spreader 80H to theheat sink 90H. The thermal conductivity between thefirst region 61H of thedie 60H and the plurality offins 95H is substantially reduced by the interfaces located at the first andsecond surfaces conventional heat spreader 80H. - The
die 60G of the present invention incorporates several advantages over thedie 60H of the prior art. Firstly, thesubstrate 20G has a higher thermal conductivity due to the presence of thewide bandgap material 10G and/or the presence of thethermal conducting material 50G. Secondly, the interfaces between thenon-wide bandgap material 15G, thewide bandgap material 10G and/or thethermal conducting material 50G do not impede the thermal conductivity between the first region andsecond regions die 60G. Thirdly, thedie 60G of the present invention is an integral unit in contrast to the assembly of thedie 60H of the prior art. Finally, thedie 60G of the present invention is smaller than the assembly of thedie 60H of the prior art. -
FIGS. 20-23 illustrate a process for increasing the thermal conductivity of a substrate 20I formed from a silicon material 15I. The process for increasing the thermal conductivity shown inFIGS. 20-23 may or may not be a part of the prior art. -
FIG. 20 is a side sectional view of a silicon substrate 20I formed from a silicon material 15I. The substrate 20I defines a first and a second surface 21I and 22I and a peripheral edge 23I. In this example, afirst region 61I of the substrate 20I is located in proximity to the first surface 21I of the substrate 20I whereas a second region 62I of the substrate 20I is located in proximity to the second surface 22I of the substrate 20I. -
FIG. 21 is a side sectional view of the silicon substrate 20I ofFIG. 20 with a layer of silicon carbide material 10I deposited onto the first side 21I of the silicon substrate 20I by a conventional vapor deposition process. The process of depositing a silicon carbide material 10I onto a substrate 20I by a conventional vapor should be well known to those skilled in the art. -
FIG. 22 is a side sectional view of the substrate 20I ofFIG. 21 with a layer of thermal conducting material 50I deposited onto the silicon carbide material 50I by a conventional vapor deposition process. The thermal conducting material 50I is shown as acarbon material 54I. -
FIG. 23 is a magnified view of a portion ofFIG. 22 illustrating the alignment of the molecularbasal planes 55I of thecarbon material 54I. Thebasal planes 55I of thecarbon material 54I are shown as planes A-B-A. The planes A-B-A of thebasal planes 55I are formed to be generally parallel to the first side 21I of the silicon substrate 20I by the conventional vapor deposition process. -
FIGS. 20-23 illustrate a process for increasing the thermal conductivity of a substrate 20I formed from a silicon material 15I. - The process for increasing the thermal conductivity shown in
FIGS. 20-23 increases the thickness of the assembly as the layers of silicon carbide material 10I and the thermal conducting material 50I are added onto the silicon substrate 20I. Furthermore, the conventional vapor deposition processes creates an interface between the silicon substrate 20I and the silicon carbide material 10I as well as creating an interface between the silicon carbide material 10I and the thermal conducting material 50I. -
FIGS. 24-29 illustrate a process of the present invention for increasing the thermal conductivity of asubstrate 20J formed from a silicon material 15J. As will be described in greater detail hereinafter, the process utilizes the thermal energy beams in a manner similar to the process shown inFIGS. 13-16 . -
FIG. 24 is a side sectional view of asilicon substrate 20J formed from a silicon material 15J. Thesubstrate 20J defines a first and asecond surface peripheral edge 23J. In this example, afirst region 61J of thesubstrate 20J is located in proximity to thefirst surface 21J of thesubstrate 20J whereas a second region 62J of thesubstrate 20J is located in proximity to thesecond surface 22J of thesubstrate 20J. -
FIG. 25 is a side sectional view of thesilicon substrate 20J ofFIG. 24 with a portion of thefirst region 61J being converted into a layer ofsilicon carbide material 10J. A first thermal energy beam (not shown) is scanned in two dimensions across thefirst region 61J in the presence of a carbon donating doping gas to form thewide bandgap material 10J within the first region of thesubstrate 20J. The first carbon donating doping gas may be selected from the group consisting of methane and acetylene. Thesilicon carbide material 10J formed in thesubstrate 20J can be up to 600 nanometers or greater depending upon the intended geometry and cooling requirements as well as the intended application and use of thesilicon substrate 20J. - Table 2 lists various parameters for converting a portion of the
silicon substrate 20J into a layer ofsilicon carbide material 10J. -
TABLE 2 Laser Type KrF Excimer ArF Excimer Wavelength (nm) 248 193 Laser Fluence (J/cm2) 1.5 1.0 Pulse Repetition Rate (kHz) 1.0 1.0 Number of Pulses 600 600 Beam Area (2 mm × 2.5 mm) 5.0 5.0 Scanning Plane (mm/s) X-Y (surface) Atmosphere Methane -
FIG. 26 is a side sectional view of thesubstrate 20J ofFIG. 25 with a portion of thesilicon carbide material 10J being converted into a layer of thermal conductingcarbon material 50J. A second thermal energy beam (not shown) is scanned in two dimensions across thewide bandgap material 10J in the presence of second reacting gas. - The second thermal energy beam (not shown) in combination with the second reacting gas diffuses silicon of the
silicon carbide material 10J to thefirst surface 11J thereby creating a layer ofsilicon carbide material 10J having lattice vacancies. The second reacting gas may be selected from the group consisting of carbon monoxide and carbon dioxide. The carbon monoxide and/or carbon dioxide reacts with the diffused silicon to form a silicon oxide gas and prevents oxidation of the substrate surface. - Table 3 lists various parameters for creating a layer of
silicon carbide material 10J having lattice vacancies. -
TABLE 3 Laser Type Excimer Wavelength (nm) 193 Energy Pulse (mJ/pulse) 260 Pulse Repetition Rate (Hz) 10 Number of Pulses 60 Pulse Time (nsec) 20 Beam Area (2 mm × 2.5 mm) 5.0 Scanning Plane (mm/s) X − Y (surface) Atmosphere - A third thermal energy beam (not shown) is directed onto the layer of
silicon carbide material 10J having lattice vacancies in the presence of a third carbon donating doping gas to diffuse carbon into the lattice vacancies to create a carbon rich layer having an atomic structure definingbasal planes 55J. The third carbon donating doping gas may be selected from the group consisting of methane and acetylene. - Table 4 lists various parameters for diffusing carbon into the lattice vacancies to create a carbon rich layer having an atomic structure defining
basal planes 55J. -
TABLE 4 Laser Type KrF Excimer ArF Excimer Wavelength (nm) 248 193 Laser Fluence (J/cm2) 1.5 1.0 Pulse Repetition Rate (kHz) 1.0 1.0 Number of Pulses 600 600 Beam Area (2 mm × 2.5 mm) 5.0 5.0 Scanning Plane (mm/s) X-Y (surface) Atmosphere Methane -
FIG. 27 is a magnified view of a portion ofFIG. 26 illustrating the alignment of the crystal latticebasal planes 55J of the carbon material 54J. Thebasal planes 55J of the carbon material 54J are shown as planes A-B-A. The planes A-B-A of thebasal planes 55J are formed to be generally parallel to thefirst side 21J of thesilicon substrate 20J. -
FIG. 28 is a side sectional view of thesilicon substrate 20J ofFIG. 27 with the crystal latticebasal planes 55J of the carbon material 54J being orientated generally perpendicular to thefirst surface 21J of thesubstrate 20J. A fourth thermal energy beam (not shown) is focused inside the carbon material 54J for aligning thebasal planes 55J of the carbon material 54J to be generally perpendicular to an external surface of the substrate to enhance the thermal conductivity between the first and the second regions of the substrate for cooling the silicon substrate. - The fourth thermal energy beam (not shown) is scanned in two dimensions across the carbon material 54J while simultaneously altering the focal point inside of the carbon material 54J. The focal point of the fourth thermal energy beam (not shown) is positioned inside of the carbon material 54J with the focal point being gradually moved toward the
first surface 21J of thesubstrate 20J. The movement of the focal point of the fourth thermal energy beam (not shown) within the carbon material 54J aligns thebasal planes 55J of the carbon material 54J to be generally perpendicular to an external surface shown as thefirst surface 21J of thesubstrate 20J. - The three dimensional movement of the fourth thermal energy beam (not shown) within the carbon material 54J results in the melting and/or solid state diffusion of the
basal planes 55J formed generally parallel to thefirst side 21J of thesilicon substrate 20J. The three dimensional movement of the fourth thermal energy beam (not shown) further results in the controlled crystallization or recrystallization of thebasal planes 55J to be generally perpendicular to thefirst surface 21J after the melting and/or solid state diffusion. The alignedbasal planes 55J oriented generally perpendicular to an external surface shown as thefirst surface 21J of the sub-state 20J can be up to 500 nm or greater depending upon the intended geometry and cooling requirements as well as the intended application and use of thesilicon substrate 20J. - Table 5 lists various parameters for aligning the
basal planes 55J of the carbon material 54J to be generally perpendicular to an external surface shown as thefirst surface 21J of thesubstrate 20J. -
TABLE 5 Laser Type Nd:YAG Wavelength (nm) 1064 Pulse Width (nsec) 260 Pulse Repetition Rate (kHz) 35 Power (W) 69.3 Beam Diameter (μm) 1.0 Beam Scan Rate (mm/s) 5.0 Scanning Plane (mm/s) Z-Y, Z-X, Z perpendicular to substrate Atmosphere Air or Argon -
FIG. 29 is a magnified view of a portion ofFIG. 28 illustrating the alignment of the molecularbasal planes 55J of the carbon material 54J. Thebasal planes 55J of the carbon material 54J are shown as planes A-B-A. The planes A-B-A of thebasal planes 55J are formed to be generally perpendicular to thefirst side 21J of thesilicon substrate 20J. In this specification, the term aligning thebasal planes 55J to be generally perpendicular to the external surface to thefirst side 21J of thesilicon substrate 20J should be interpreted as a statistical significant number of molecules of the carbon material 54J being oriented within forty-five degrees of a perpendicular extending from the external surface of thefirst side 21J of thesilicon substrate 20J. -
FIGS. 30-32 illustrate a process of the present invention for increasing the thermal conductivity of asubstrate 20K formed from asilicon carbide material 10K. The process utilizes thermal energy beams in a manner similar to the process shown inFIGS. 26-28 . -
FIG. 30 is a side sectional view of asubstrate 20K formed from asilicon carbide material 10K. Thesubstrate 20K defines a first and asecond surface peripheral edge 23K. Afirst region 61K of thesubstrate 20K is located in proximity to thefirst surface 21K of thesubstrate 20K whereas asecond region 62K of thesubstrate 20K is located in proximity to thesecond surface 22K of thesubstrate 20K. -
FIG. 31 is a side sectional view of thesubstrate 20K ofFIG. 30 with a portion of thesilicon carbide material 10K being converted into a layer of thermal conductingcarbon material 50K. A first thermal energy beam (not shown) is scanned in two dimensions across thewide bandgap material 10K in the presence of a reacting gas. - The first thermal energy beam in combination with the reacting gas diffuses silicon of the silicon carbide to the
first surface 21K thereby creating a layer of silicon carbide having lattice vacancies. The silicon carbide at thefirst surface 21K reacts with the reacting gas to form a silicon oxide gas. The reacting gas may be selected from the group consisting of carbon monoxide and carbon dioxide. - A second thermal energy beam is directed onto the layer of silicon carbide having lattice vacancies in the presence of a carbon donating doping gas to diffuse carbon into the lattice vacancies to create a carbon rich layer having an atomic structure defining basal planes 55K. The basal planes 55K are formed to be generally parallel to the
first side 21K of thesubstrate 20K in a manner similar to thebasal planes 55J shown inFIG. 27 . The carbon donating doping gas may be selected from the group consisting of methane and acetylene. -
FIG. 32 is a side sectional view of thesubstrate 20K ofFIG. 31 with the crystal lattice basal planes 55K of the carbon material 54K being aligned generally perpendicular to thefirst surface 21K of thesubstrate 20K. A third thermal energy beam (not shown) is focused inside the carbon material 54K for aligning the basal planes 55K of the carbon material 54K to be generally perpendicular to an external surface of thesubstrate 20K to enhance the thermal conductivity between the first and thesecond regions substrate 20K for cooling thesubstrate 20K. - The fourth thermal energy beam (not shown) is scanned in two dimensions across the carbon material 54K while simultaneously altering the focal point of the inside carbon material 54K. The movement of the focal point of the fourth thermal energy beam (not shown) within the carbon material 54K aligns the basal planes 55K of the carbon material 54K to be generally perpendicular to an external surface in a manner similar to the
basal planes 55J shown inFIG. 29 . -
FIG. 33 is a graph of the thermal conductivity of different carbon materials. The thermal conductivity of diamond or diamond like carbon material is compared to the thermal conductivity of graphite along the basal planes A-B-A and the thermal conductivity of graphite normal to the basal planes A-B-A. The thermal conductivity of graphite along the basal planes A-B-A is significantly greater than the thermal conductivity of graphite normal to the basal planes A-B-A. - The incorporation of the carbon material 54J within the
silicon carbide material 10J increases the thermal conductivity of thesilicon substrate 20J irrespective of the orientation of thebasal planes 55J. A greater thermal conductivity of thesilicon substrate 20J is achieved when thebasal planes 55J are aligned generally perpendicular to anexternal surface 21J of thesilicon substrate 20J. The greatest thermal conductivity of thesilicon substrate 20J is achieved with a diamond or diamond like carbon material. Although the carbon material 54J is shown as a graphite structure inFIGS. 23 , 27 and 29, it should be understood that the carbon material 54J can actually have various degrees or types of crystalline structure. - In another example of the invention the silicon substrate is first converted to a silicon carbide region using the process parameters given in Table 2. The silicon carbide is then simultaneously converted into a carbon rich region (75-100 atomic % carbon) using the process parameters given in Table 5 where scanning is in the x-y plane.
- In another example of the invention the silicon substrate is first converted to a silicon carbide region using the process parameters given in Table 2. The silicon carbide is then simultaneously converted into a carbon rich graphite-like region (75-100 atomic % carbon) that has basal planes generally oriented generally perpendicular to the substrate surface using the process parameters given in Table 5 where scanning is in the z-x and z-y plane.
-
FIG. 34 is a listing of the thermal conductivity of various materials. The thermal conductivity of silicon carbide is three times greater than the thermal conductivity of silicon. Referring back toFIG. 25 , thesilicon carbide material 10J formed in situ within afirst region 61J of thesilicon material 20J enhances the thermal conductivity between the first and thesecond regions 61J and 62J of thesubstrate 60J for dissipating from thesecond region 61J of thesubstrate 20J. - The present invention provides a process for forming a wide bandgap material within a non-wide bandgap substrate to enhance the thermal conductivity and heat dissipation of the substrate. A thermal conducting material may be formed in situ within a wide bandgap material to enhance further the thermal conductivity and heat dissipation thereof. The formation of the wide bandgap material and/or the thermal conducting material in situ creates a continuous or diffuse boundary as opposed to a discrete boundary and matches the coefficient of thermal expansion of the prior art.
- The present disclosure includes that contained in the appended claims as well as that of the foregoing description. Although this invention has been described in its preferred form with a certain degree of particularity, it is understood that the present disclosure of the preferred form has been made only by way of example and that numerous changes in the details of construction and the combination and arrangement of parts may be resorted to without departing from the spirit and scope of the invention.
Claims (24)
1. (canceled)
2. (canceled)
3. (canceled)
4. (canceled)
5. (canceled)
6. (canceled)
7. (canceled)
8. (canceled)
9. (canceled)
10. (canceled)
11. (canceled)
12. (canceled)
13. (canceled)
14. A silicon substrate having enhanced thermal dissipating properties, comprising:
a substrate of a silicon material having a first and a second region; and
a silicon carbide material formed in situ within said first region of said substrate.
15. A silicon substrate having enhanced thermal dissipating properties as set forth in claim 14 , including a carbon rich layer formed in situ within a portion of said silicon carbide material.
16. A silicon substrate having enhanced thermal dissipating properties as set forth in claim 14 , including a graphite layer formed in situ within a portion of said silicon carbide material.
17. A silicon substrate having enhanced thermal dissipating properties as set forth in claim 14 , including a carbon rich layer formed in situ within a portion of said silicon carbide material having an atomic structure defining basal planes aligned generally parallel to an external surface of said substrate.
18. A silicon substrate having enhanced thermal dissipating properties as set forth in claim 14 , including a carbon rich layer formed in situ within a portion of said silicon carbide material having an atomic structure defining basal planes aligned generally perpendicular to an external surface of said substrate to enhance the thermal conductivity between the first and the second regions of the substrate.
19. A non-wide bandgap substrate having enhanced thermal dissipating properties, comprising:
a substrate of a non-wide bandgap material having a first and a second region; and
a wide bandgap material formed in situ within said first region of said substrate.
20. A silicon carbide substrate having enhanced thermal dissipating properties, comprising:
a substrate of a silicon carbide material having a first and a second region; and
thermal conducting material formed in situ within a first region of said silicon carbide material to enhance the thermal conductivity between the first and the second regions of the substrate for dissipating from the second region of the substrate.
21. A silicon carbide substrate having enhanced thermal dissipating properties as set forth in claim 20 , including a including continuous or diffuse boundaries between said first and second regions.
22. A silicon substrate having enhanced thermal dissipating properties as set forth in claim 14 , including a including continuous or diffuse boundaries between said first and second regions.
23. A non-wide bandgap substrate having enhanced thermal dissipating properties as set forth in claim 19 , including a continuous or diffuse boundaries between said first and second regions.
24. A wide bandgap substrate having enhanced thermal dissipating properties, comprising:
a substrate of a wide bandgap material having a first and a second region;
a second wide bandgap material formed in situ within said first region of said substrate; and
a continuous or diffuse boundary between said first and second regions.
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US12/924,965 US20110031504A1 (en) | 2006-04-20 | 2010-10-08 | Apparatus and method for increasing thermal conductivity of a substrate |
US12/928,229 US8617669B1 (en) | 2006-04-20 | 2010-12-07 | Laser formation of graphene |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9245753B2 (en) * | 2013-06-14 | 2016-01-26 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing semiconductor device and semiconductor device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7268063B1 (en) * | 2004-06-01 | 2007-09-11 | University Of Central Florida | Process for fabricating semiconductor component |
US7951632B1 (en) | 2005-01-26 | 2011-05-31 | University Of Central Florida | Optical device and method of making |
US7811914B1 (en) * | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
US8617669B1 (en) | 2006-04-20 | 2013-12-31 | Partial Assignment to University of Central Florida | Laser formation of graphene |
US8574528B2 (en) * | 2009-09-04 | 2013-11-05 | University Of South Carolina | Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime |
US20110108854A1 (en) * | 2009-11-10 | 2011-05-12 | Chien-Min Sung | Substantially lattice matched semiconductor materials and associated methods |
US9059079B1 (en) | 2012-09-26 | 2015-06-16 | Ut-Battelle, Llc | Processing of insulators and semiconductors |
US9620667B1 (en) | 2013-12-10 | 2017-04-11 | AppliCote Associates LLC | Thermal doping of materials |
US9601641B1 (en) * | 2013-12-10 | 2017-03-21 | AppliCote Associates, LLC | Ultra-high pressure doping of materials |
Citations (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3214315A (en) * | 1962-03-28 | 1965-10-26 | Burton Solomon | Method for forming stamped electrical circuits |
US3396401A (en) * | 1966-10-20 | 1968-08-06 | Kenneth K. Nonomura | Apparatus and method for the marking of intelligence on a record medium |
US3605469A (en) * | 1967-09-23 | 1971-09-20 | Martin T Queralto | Method and apparatus for improving the properties of steel rope |
US3854123A (en) * | 1973-04-02 | 1974-12-10 | Zenith Radio Corp | Remotely controllable tuning system for television tuners |
US3865564A (en) * | 1973-07-09 | 1975-02-11 | Bell Telephone Labor Inc | Fabrication of glass fibers from preform by lasers |
US3874240A (en) * | 1969-06-25 | 1975-04-01 | Nasa | Heat detection and compositions and devices therefor |
US3943324A (en) * | 1970-12-14 | 1976-03-09 | Arthur D. Little, Inc. | Apparatus for forming refractory tubing |
US3944640A (en) * | 1970-09-02 | 1976-03-16 | Arthur D. Little, Inc. | Method for forming refractory fibers by laser energy |
US3965328A (en) * | 1974-12-19 | 1976-06-22 | Avco Corporation | Laser deep cutting process |
US3981705A (en) * | 1975-05-05 | 1976-09-21 | Bell Telephone Laboratories, Incorporated | Method of making optical waveguides from glass fibers |
US4043170A (en) * | 1975-02-20 | 1977-08-23 | "December 4" Drotmuvek | Patenting process and apparatus combined with a wire |
US4135902A (en) * | 1978-03-03 | 1979-01-23 | Western Electric Co., Inc. | Method and apparatus for drawing optical fibers |
US4142088A (en) * | 1973-08-17 | 1979-02-27 | The United States Of America As Represented By The United States Department Of Energy | Method of mounting a fuel pellet in a laser-excited fusion reactor |
US4159414A (en) * | 1978-04-25 | 1979-06-26 | Massachusetts Institute Of Technology | Method for forming electrically conductive paths |
US4215263A (en) * | 1978-06-08 | 1980-07-29 | Corning Glass Works | Drawing optical waveguides by heating with laser radiation |
US4309224A (en) * | 1978-10-06 | 1982-01-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
US4372989A (en) * | 1979-06-20 | 1983-02-08 | Siemens Aktiengesellschaft | Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films |
US4383843A (en) * | 1981-09-16 | 1983-05-17 | Western Electric Company, Inc. | Methods of and apparatus for heating a preform from which lightguide fiber is drawn |
US4539251A (en) * | 1983-06-30 | 1985-09-03 | Mitsubishi Kinzoku Kabushiki Kaisha | Surface coated Sialon-base ceramic materials for tools |
US4565712A (en) * | 1980-04-24 | 1986-01-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of making a semiconductor read only memory |
US4620264A (en) * | 1983-12-23 | 1986-10-28 | Hitachi, Ltd. | Multi-layer ceramic wiring circuit board and process for producing the same |
US4624934A (en) * | 1984-05-04 | 1986-11-25 | Asahi Glass Company Ltd. | Ceramic composition for multilayer printed wiring board |
US4663826A (en) * | 1984-10-09 | 1987-05-12 | Dieter Baeuerle | Method for generating a conductive region on a surface of a body of dielectric material |
US4691091A (en) * | 1985-12-31 | 1987-09-01 | At&T Technologies | Direct writing of conductive patterns |
US4710253A (en) * | 1984-06-04 | 1987-12-01 | Somich Technology Inc. | Method for manufacturing a circuit board |
US4761339A (en) * | 1984-03-27 | 1988-08-02 | Kabushiki Kaisha Toshiba | Sintered ceramic articles and method for production thereof |
US4791239A (en) * | 1986-05-30 | 1988-12-13 | Furukawa Denki Kogyo Kabushiki Kaisha | Multilayer printed wiring board and method for producing the same |
US4840853A (en) * | 1986-03-08 | 1989-06-20 | Ngk Spark Plug Co., Ltd. | Surface structure of AlN substrate and a process for producing the same |
US4847138A (en) * | 1987-10-07 | 1989-07-11 | Corning Glass Works | Thermal writing on glass and glass-ceramic substrates |
US4860442A (en) * | 1988-11-28 | 1989-08-29 | Kulite Semiconductor | Methods for mounting components on convoluted three-dimensional structures |
US4872923A (en) * | 1987-08-03 | 1989-10-10 | U.S. Automation Co. | Die-less drawing method and apparatus |
US4880770A (en) * | 1987-05-04 | 1989-11-14 | Eastman Kodak Company | Metalorganic deposition process for preparing superconducting oxide films |
US4901550A (en) * | 1987-12-28 | 1990-02-20 | Mitsubishi Kinzoku Kabushiki Kaisha | Manufacturing method of extra fine wire |
US4912087A (en) * | 1988-04-15 | 1990-03-27 | Ford Motor Company | Rapid thermal annealing of superconducting oxide precursor films on Si and SiO2 substrates |
US4924033A (en) * | 1988-03-04 | 1990-05-08 | Kabushiki Kaisha Toshiba | Brazing paste for bonding metal and ceramic |
US4950558A (en) * | 1987-10-01 | 1990-08-21 | Gte Laboratories Incorporated | Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof |
US4957811A (en) * | 1988-09-28 | 1990-09-18 | Hoechst Ceramtec Aktiengesellschaft | Components of silicon-infiltrated silicon carbide having a porous surface, and process for the production thereof |
US4962085A (en) * | 1988-04-12 | 1990-10-09 | Inco Alloys International, Inc. | Production of oxidic superconductors by zone oxidation of a precursor alloy |
US4988564A (en) * | 1986-08-25 | 1991-01-29 | Gte Laboratories Incorporated | Metal carbide, nitride, or carbonitride whiskers coated with metal carbides, nitrides, carbonitrides, or oxides |
US5015618A (en) * | 1989-10-19 | 1991-05-14 | Gte Laboratories Incorporated | Laser zone melted Bi--Sr--Ca--Cu--O thick films |
US5055967A (en) * | 1988-10-26 | 1991-10-08 | Texas Instruments Incorporated | Substrate for an electrical circuit system and a circuit system using that substrate |
US5063421A (en) * | 1988-08-08 | 1991-11-05 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode having a pn junction |
US5127364A (en) * | 1989-12-18 | 1992-07-07 | General Electric Company | Apparatus for making A-15 type tape superconductors which includes means to melt a wire at its tip so a beam is formed and means for wiping the bead onto a continuous tape substrate |
US5145741A (en) * | 1989-06-05 | 1992-09-08 | Quick Nathaniel R | Converting ceramic materials to electrical conductors and semiconductors |
US5149681A (en) * | 1990-05-14 | 1992-09-22 | General Atomics | Melt texturing of long superconductor fibers |
US5180440A (en) * | 1988-11-23 | 1993-01-19 | Pace Incorporated | Printed circuit thermocouple arrangements for personnel training and equipment evaluation purposes |
US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
US5336360A (en) * | 1986-08-18 | 1994-08-09 | Clemson University | Laser assisted fiber growth |
US5391841A (en) * | 1992-12-08 | 1995-02-21 | Quick; Nathaniel R. | Laser processed coatings on electronic circuit substrates |
US5405481A (en) * | 1991-12-13 | 1995-04-11 | Licoppe; Christian | Gas photonanograph for producing and optically analyzing nanometre scale patterns |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5447418A (en) * | 1993-08-30 | 1995-09-05 | Mitsubishi Jukogyo Kabushiki Kaisha | Scroll-type fluid machine having a sealed back pressure chamber |
US5459098A (en) * | 1992-10-19 | 1995-10-17 | Marietta Energy Systems, Inc. | Maskless laser writing of microscopic metallic interconnects |
US5493096A (en) * | 1994-05-10 | 1996-02-20 | Grumman Aerospace Corporation | Thin substrate micro-via interconnect |
US5629532A (en) * | 1986-10-09 | 1997-05-13 | Myrick; James J. | Diamond-like carbon optical waveguide |
US5695828A (en) * | 1996-11-21 | 1997-12-09 | Eastman Kodak Company | Method for inducing electrical conductivity in zirconia ceramic surfaces |
US5733609A (en) * | 1993-06-01 | 1998-03-31 | Wang; Liang | Ceramic coatings synthesized by chemical reactions energized by laser plasmas |
US5754299A (en) * | 1995-01-13 | 1998-05-19 | Nikon Corporation | Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus |
US5793042A (en) * | 1996-09-30 | 1998-08-11 | Quick; Nathaniel R. | Infrared spectrophotometer accelerated corrosion-erosion analysis system |
US5823039A (en) * | 1995-02-07 | 1998-10-20 | Noge Electric Industries Co., Ltd. | Apparatus for drawing wire using a heated drawing die and cooling device |
US5837607A (en) * | 1996-12-05 | 1998-11-17 | Quick; Nathaniel R. | Method of making a laser synthesized ceramic electronic devices and circuits |
US5880200A (en) * | 1996-11-19 | 1999-03-09 | Krafft, S.A. | Silicone compositions hardenable in the presence of water or air humidity |
US5889234A (en) * | 1996-11-21 | 1999-03-30 | Eastman Kodak Company | Zirconia ceramic members with laser induced electrical conductivity in surfaces thereof |
US5906708A (en) * | 1994-11-10 | 1999-05-25 | Lawrence Semiconductor Research Laboratory, Inc. | Silicon-germanium-carbon compositions in selective etch processes |
US6025609A (en) * | 1996-12-05 | 2000-02-15 | Quick; Nathaniel R. | Laser synthesized ceramic electronic devices and circuits and method for making |
US6054375A (en) * | 1996-12-05 | 2000-04-25 | Quick; Nathaniel R. | Method for making laser synthesized ceramic electronic devices and circuits |
US6203861B1 (en) * | 1998-01-12 | 2001-03-20 | University Of Central Florida | One-step rapid manufacturing of metal and composite parts |
US6221154B1 (en) * | 1999-02-18 | 2001-04-24 | City University Of Hong Kong | Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD) |
US6252197B1 (en) * | 1998-12-01 | 2001-06-26 | Accudyne Display And Semiconductor Systems, Inc. | Method and apparatus for separating non-metallic substrates utilizing a supplemental mechanical force applicator |
US6255671B1 (en) * | 1998-01-05 | 2001-07-03 | International Business Machines Corporation | Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair |
US6271576B1 (en) * | 1996-12-05 | 2001-08-07 | Nathaniel R. Quick | Laser synthesized ceramic sensors and method for making |
US6274234B1 (en) * | 1996-12-16 | 2001-08-14 | Commissariat A L'energie Atomique | Very long and highly stable atomic wires, method for making these wires, application in nano-electronics |
US6313015B1 (en) * | 1999-06-08 | 2001-11-06 | City University Of Hong Kong | Growth method for silicon nanowires and nanoparticle chains from silicon monoxide |
US6334939B1 (en) * | 2000-06-15 | 2002-01-01 | The University Of North Carolina At Chapel Hill | Nanostructure-based high energy capacity material |
US6407443B2 (en) * | 2000-03-01 | 2002-06-18 | Hewlett-Packard Company | Nanoscale patterning for the formation of extensive wires |
US6621448B1 (en) * | 2002-04-05 | 2003-09-16 | The Regents Of The University Of California | Non-contact radar system for reconstruction of scenes obscured under snow and similar material |
US6665360B1 (en) * | 1999-12-20 | 2003-12-16 | Cypress Semiconductor Corp. | Data transmitter with sequential serialization |
US6670693B1 (en) * | 1996-12-05 | 2003-12-30 | Nathaniel R. Quick | Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
US6732562B2 (en) * | 2000-05-09 | 2004-05-11 | University Of Central Florida | Apparatus and method for drawing continuous fiber |
US6900465B2 (en) * | 1994-12-02 | 2005-05-31 | Nichia Corporation | Nitride semiconductor light-emitting device |
US6930009B1 (en) * | 1995-12-05 | 2005-08-16 | Nathaniel R. Quick | Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
US6937748B1 (en) * | 1999-09-10 | 2005-08-30 | Ultra-Scan Corporation | Left hand right hand invariant dynamic finger positioning guide |
US20050271816A1 (en) * | 2002-08-01 | 2005-12-08 | Frank Meschke | Material comprising a surface consisting of a metal carbide-carbon composite and a method for producing the same |
US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
US7268063B1 (en) * | 2004-06-01 | 2007-09-11 | University Of Central Florida | Process for fabricating semiconductor component |
US7419887B1 (en) * | 2004-07-26 | 2008-09-02 | Quick Nathaniel R | Laser assisted nano deposition |
US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
US7630147B1 (en) * | 2007-02-16 | 2009-12-08 | University Of Central Florida Research Foundation, Inc. | Laser beam shaping for pitchfork profile |
US7811914B1 (en) * | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3419321A (en) | 1966-02-24 | 1968-12-31 | Lear Siegler Inc | Laser optical apparatus for cutting holes |
JPS5140296Y2 (en) | 1971-08-07 | 1976-10-01 | ||
US3945318A (en) | 1974-04-08 | 1976-03-23 | Logetronics, Inc. | Printing plate blank and image sheet by laser transfer |
JPS5895830A (en) | 1981-12-01 | 1983-06-07 | Nec Corp | Manufacture of semiconductor device |
FR2537732A1 (en) | 1982-12-10 | 1984-06-15 | Thomson Csf | DEVICE FOR WARMING A SUPERFICIAL ANNULAR AREA OF A FILIFORM OBJECT |
US4496607A (en) | 1984-01-27 | 1985-01-29 | W. R. Grace & Co. | Laser process for producing electrically conductive surfaces on insulators |
JPH0524975A (en) | 1991-07-25 | 1993-02-02 | Matsushita Electric Ind Co Ltd | Production of crystalline thin film |
JPH09237913A (en) | 1995-12-28 | 1997-09-09 | Fuji Xerox Co Ltd | Semiconductor photosensitive element and its manufacture |
JP3650727B2 (en) * | 2000-08-10 | 2005-05-25 | Hoya株式会社 | Silicon carbide manufacturing method |
GB0119371D0 (en) | 2001-08-08 | 2001-10-03 | Univ Bristol | Workpiece forming |
US6939748B1 (en) | 2003-10-13 | 2005-09-06 | Nathaniel R. Quick | Nano-size semiconductor component and method of making |
-
2006
- 2006-04-20 US US11/407,738 patent/US7811914B1/en not_active Expired - Fee Related
-
2010
- 2010-10-08 US US12/924,965 patent/US20110031504A1/en not_active Abandoned
Patent Citations (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3214315A (en) * | 1962-03-28 | 1965-10-26 | Burton Solomon | Method for forming stamped electrical circuits |
US3396401A (en) * | 1966-10-20 | 1968-08-06 | Kenneth K. Nonomura | Apparatus and method for the marking of intelligence on a record medium |
US3605469A (en) * | 1967-09-23 | 1971-09-20 | Martin T Queralto | Method and apparatus for improving the properties of steel rope |
US3874240A (en) * | 1969-06-25 | 1975-04-01 | Nasa | Heat detection and compositions and devices therefor |
US3944640A (en) * | 1970-09-02 | 1976-03-16 | Arthur D. Little, Inc. | Method for forming refractory fibers by laser energy |
US3943324A (en) * | 1970-12-14 | 1976-03-09 | Arthur D. Little, Inc. | Apparatus for forming refractory tubing |
US3854123A (en) * | 1973-04-02 | 1974-12-10 | Zenith Radio Corp | Remotely controllable tuning system for television tuners |
US3865564A (en) * | 1973-07-09 | 1975-02-11 | Bell Telephone Labor Inc | Fabrication of glass fibers from preform by lasers |
US4142088A (en) * | 1973-08-17 | 1979-02-27 | The United States Of America As Represented By The United States Department Of Energy | Method of mounting a fuel pellet in a laser-excited fusion reactor |
US3965328A (en) * | 1974-12-19 | 1976-06-22 | Avco Corporation | Laser deep cutting process |
US4043170A (en) * | 1975-02-20 | 1977-08-23 | "December 4" Drotmuvek | Patenting process and apparatus combined with a wire |
US3981705A (en) * | 1975-05-05 | 1976-09-21 | Bell Telephone Laboratories, Incorporated | Method of making optical waveguides from glass fibers |
US4135902A (en) * | 1978-03-03 | 1979-01-23 | Western Electric Co., Inc. | Method and apparatus for drawing optical fibers |
US4159414A (en) * | 1978-04-25 | 1979-06-26 | Massachusetts Institute Of Technology | Method for forming electrically conductive paths |
US4215263A (en) * | 1978-06-08 | 1980-07-29 | Corning Glass Works | Drawing optical waveguides by heating with laser radiation |
US4309224A (en) * | 1978-10-06 | 1982-01-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
US4372989A (en) * | 1979-06-20 | 1983-02-08 | Siemens Aktiengesellschaft | Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films |
US4565712A (en) * | 1980-04-24 | 1986-01-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of making a semiconductor read only memory |
US4339285A (en) * | 1980-07-28 | 1982-07-13 | Rca Corporation | Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation |
US4383843A (en) * | 1981-09-16 | 1983-05-17 | Western Electric Company, Inc. | Methods of and apparatus for heating a preform from which lightguide fiber is drawn |
US4539251A (en) * | 1983-06-30 | 1985-09-03 | Mitsubishi Kinzoku Kabushiki Kaisha | Surface coated Sialon-base ceramic materials for tools |
US4620264A (en) * | 1983-12-23 | 1986-10-28 | Hitachi, Ltd. | Multi-layer ceramic wiring circuit board and process for producing the same |
US4761339A (en) * | 1984-03-27 | 1988-08-02 | Kabushiki Kaisha Toshiba | Sintered ceramic articles and method for production thereof |
US4624934A (en) * | 1984-05-04 | 1986-11-25 | Asahi Glass Company Ltd. | Ceramic composition for multilayer printed wiring board |
US4710253A (en) * | 1984-06-04 | 1987-12-01 | Somich Technology Inc. | Method for manufacturing a circuit board |
US4663826A (en) * | 1984-10-09 | 1987-05-12 | Dieter Baeuerle | Method for generating a conductive region on a surface of a body of dielectric material |
US4691091A (en) * | 1985-12-31 | 1987-09-01 | At&T Technologies | Direct writing of conductive patterns |
US4840853A (en) * | 1986-03-08 | 1989-06-20 | Ngk Spark Plug Co., Ltd. | Surface structure of AlN substrate and a process for producing the same |
US4791239A (en) * | 1986-05-30 | 1988-12-13 | Furukawa Denki Kogyo Kabushiki Kaisha | Multilayer printed wiring board and method for producing the same |
US5336360A (en) * | 1986-08-18 | 1994-08-09 | Clemson University | Laser assisted fiber growth |
US5549971A (en) * | 1986-08-18 | 1996-08-27 | Clemson University | Laser assisted fiber growth |
US4988564A (en) * | 1986-08-25 | 1991-01-29 | Gte Laboratories Incorporated | Metal carbide, nitride, or carbonitride whiskers coated with metal carbides, nitrides, carbonitrides, or oxides |
US5629532A (en) * | 1986-10-09 | 1997-05-13 | Myrick; James J. | Diamond-like carbon optical waveguide |
US4880770A (en) * | 1987-05-04 | 1989-11-14 | Eastman Kodak Company | Metalorganic deposition process for preparing superconducting oxide films |
US4872923A (en) * | 1987-08-03 | 1989-10-10 | U.S. Automation Co. | Die-less drawing method and apparatus |
US4950558A (en) * | 1987-10-01 | 1990-08-21 | Gte Laboratories Incorporated | Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof |
US4847138A (en) * | 1987-10-07 | 1989-07-11 | Corning Glass Works | Thermal writing on glass and glass-ceramic substrates |
US4901550A (en) * | 1987-12-28 | 1990-02-20 | Mitsubishi Kinzoku Kabushiki Kaisha | Manufacturing method of extra fine wire |
US4924033A (en) * | 1988-03-04 | 1990-05-08 | Kabushiki Kaisha Toshiba | Brazing paste for bonding metal and ceramic |
US4962085A (en) * | 1988-04-12 | 1990-10-09 | Inco Alloys International, Inc. | Production of oxidic superconductors by zone oxidation of a precursor alloy |
US4912087A (en) * | 1988-04-15 | 1990-03-27 | Ford Motor Company | Rapid thermal annealing of superconducting oxide precursor films on Si and SiO2 substrates |
US5063421A (en) * | 1988-08-08 | 1991-11-05 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode having a pn junction |
US4957811A (en) * | 1988-09-28 | 1990-09-18 | Hoechst Ceramtec Aktiengesellschaft | Components of silicon-infiltrated silicon carbide having a porous surface, and process for the production thereof |
US5055967A (en) * | 1988-10-26 | 1991-10-08 | Texas Instruments Incorporated | Substrate for an electrical circuit system and a circuit system using that substrate |
US5180440A (en) * | 1988-11-23 | 1993-01-19 | Pace Incorporated | Printed circuit thermocouple arrangements for personnel training and equipment evaluation purposes |
US4860442A (en) * | 1988-11-28 | 1989-08-29 | Kulite Semiconductor | Methods for mounting components on convoluted three-dimensional structures |
US5145741A (en) * | 1989-06-05 | 1992-09-08 | Quick Nathaniel R | Converting ceramic materials to electrical conductors and semiconductors |
US5015618A (en) * | 1989-10-19 | 1991-05-14 | Gte Laboratories Incorporated | Laser zone melted Bi--Sr--Ca--Cu--O thick films |
US5127364A (en) * | 1989-12-18 | 1992-07-07 | General Electric Company | Apparatus for making A-15 type tape superconductors which includes means to melt a wire at its tip so a beam is formed and means for wiping the bead onto a continuous tape substrate |
US5149681A (en) * | 1990-05-14 | 1992-09-22 | General Atomics | Melt texturing of long superconductor fibers |
US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
US5405481A (en) * | 1991-12-13 | 1995-04-11 | Licoppe; Christian | Gas photonanograph for producing and optically analyzing nanometre scale patterns |
US5459098A (en) * | 1992-10-19 | 1995-10-17 | Marietta Energy Systems, Inc. | Maskless laser writing of microscopic metallic interconnects |
US5391841A (en) * | 1992-12-08 | 1995-02-21 | Quick; Nathaniel R. | Laser processed coatings on electronic circuit substrates |
US5733609A (en) * | 1993-06-01 | 1998-03-31 | Wang; Liang | Ceramic coatings synthesized by chemical reactions energized by laser plasmas |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5447418A (en) * | 1993-08-30 | 1995-09-05 | Mitsubishi Jukogyo Kabushiki Kaisha | Scroll-type fluid machine having a sealed back pressure chamber |
US5493096A (en) * | 1994-05-10 | 1996-02-20 | Grumman Aerospace Corporation | Thin substrate micro-via interconnect |
US6064081A (en) * | 1994-11-10 | 2000-05-16 | Lawrence Semiconductor Research Laboratory, Inc. | Silicon-germanium-carbon compositions and processes thereof |
US5961877A (en) * | 1994-11-10 | 1999-10-05 | Robinson; Mcdonald | Wet chemical etchants |
US5906708A (en) * | 1994-11-10 | 1999-05-25 | Lawrence Semiconductor Research Laboratory, Inc. | Silicon-germanium-carbon compositions in selective etch processes |
US6900465B2 (en) * | 1994-12-02 | 2005-05-31 | Nichia Corporation | Nitride semiconductor light-emitting device |
US5754299A (en) * | 1995-01-13 | 1998-05-19 | Nikon Corporation | Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus |
US5823039A (en) * | 1995-02-07 | 1998-10-20 | Noge Electric Industries Co., Ltd. | Apparatus for drawing wire using a heated drawing die and cooling device |
US6930009B1 (en) * | 1995-12-05 | 2005-08-16 | Nathaniel R. Quick | Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
US5793042A (en) * | 1996-09-30 | 1998-08-11 | Quick; Nathaniel R. | Infrared spectrophotometer accelerated corrosion-erosion analysis system |
US5880200A (en) * | 1996-11-19 | 1999-03-09 | Krafft, S.A. | Silicone compositions hardenable in the presence of water or air humidity |
US5889234A (en) * | 1996-11-21 | 1999-03-30 | Eastman Kodak Company | Zirconia ceramic members with laser induced electrical conductivity in surfaces thereof |
US5695828A (en) * | 1996-11-21 | 1997-12-09 | Eastman Kodak Company | Method for inducing electrical conductivity in zirconia ceramic surfaces |
US5837607A (en) * | 1996-12-05 | 1998-11-17 | Quick; Nathaniel R. | Method of making a laser synthesized ceramic electronic devices and circuits |
US6670693B1 (en) * | 1996-12-05 | 2003-12-30 | Nathaniel R. Quick | Laser synthesized wide-bandgap semiconductor electronic devices and circuits |
US6271576B1 (en) * | 1996-12-05 | 2001-08-07 | Nathaniel R. Quick | Laser synthesized ceramic sensors and method for making |
US6025609A (en) * | 1996-12-05 | 2000-02-15 | Quick; Nathaniel R. | Laser synthesized ceramic electronic devices and circuits and method for making |
US6054375A (en) * | 1996-12-05 | 2000-04-25 | Quick; Nathaniel R. | Method for making laser synthesized ceramic electronic devices and circuits |
US6274234B1 (en) * | 1996-12-16 | 2001-08-14 | Commissariat A L'energie Atomique | Very long and highly stable atomic wires, method for making these wires, application in nano-electronics |
US6255671B1 (en) * | 1998-01-05 | 2001-07-03 | International Business Machines Corporation | Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair |
US6203861B1 (en) * | 1998-01-12 | 2001-03-20 | University Of Central Florida | One-step rapid manufacturing of metal and composite parts |
US6526327B2 (en) * | 1998-01-12 | 2003-02-25 | University Of Central Florida | One-step rapid manufacturing of metal and composite parts |
US6252197B1 (en) * | 1998-12-01 | 2001-06-26 | Accudyne Display And Semiconductor Systems, Inc. | Method and apparatus for separating non-metallic substrates utilizing a supplemental mechanical force applicator |
US6221154B1 (en) * | 1999-02-18 | 2001-04-24 | City University Of Hong Kong | Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD) |
US6313015B1 (en) * | 1999-06-08 | 2001-11-06 | City University Of Hong Kong | Growth method for silicon nanowires and nanoparticle chains from silicon monoxide |
US6937748B1 (en) * | 1999-09-10 | 2005-08-30 | Ultra-Scan Corporation | Left hand right hand invariant dynamic finger positioning guide |
US6665360B1 (en) * | 1999-12-20 | 2003-12-16 | Cypress Semiconductor Corp. | Data transmitter with sequential serialization |
US6407443B2 (en) * | 2000-03-01 | 2002-06-18 | Hewlett-Packard Company | Nanoscale patterning for the formation of extensive wires |
US7237422B2 (en) * | 2000-05-09 | 2007-07-03 | University Of Central Florida | Method of drawing a composite wire |
US6732562B2 (en) * | 2000-05-09 | 2004-05-11 | University Of Central Florida | Apparatus and method for drawing continuous fiber |
US6334939B1 (en) * | 2000-06-15 | 2002-01-01 | The University Of North Carolina At Chapel Hill | Nanostructure-based high energy capacity material |
US6621448B1 (en) * | 2002-04-05 | 2003-09-16 | The Regents Of The University Of California | Non-contact radar system for reconstruction of scenes obscured under snow and similar material |
US20050271816A1 (en) * | 2002-08-01 | 2005-12-08 | Frank Meschke | Material comprising a surface consisting of a metal carbide-carbon composite and a method for producing the same |
US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
US7897492B2 (en) * | 2004-02-19 | 2011-03-01 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
US7268063B1 (en) * | 2004-06-01 | 2007-09-11 | University Of Central Florida | Process for fabricating semiconductor component |
US7419887B1 (en) * | 2004-07-26 | 2008-09-02 | Quick Nathaniel R | Laser assisted nano deposition |
US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
US7811914B1 (en) * | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
US7630147B1 (en) * | 2007-02-16 | 2009-12-08 | University Of Central Florida Research Foundation, Inc. | Laser beam shaping for pitchfork profile |
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US9245753B2 (en) * | 2013-06-14 | 2016-01-26 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing semiconductor device and semiconductor device |
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