US20110034034A1 - Dual temperature heater - Google Patents
Dual temperature heater Download PDFInfo
- Publication number
- US20110034034A1 US20110034034A1 US12/851,794 US85179410A US2011034034A1 US 20110034034 A1 US20110034034 A1 US 20110034034A1 US 85179410 A US85179410 A US 85179410A US 2011034034 A1 US2011034034 A1 US 2011034034A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- centering
- end portion
- support
- centering members
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Abstract
A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.
Description
- This application claims benefit of U.S. provisional patent application Ser. No. 61/232,172 (Attorney Docket No. 14440L), filed Aug. 7, 2009, which is herein incorporated by reference in its entirety.
- 1. Field of the Invention
- Embodiments of the present invention generally relate to apparatus and methods for processing semiconductor substrates. More particularly, embodiments of the present invention relate to an apparatus and methods for heating a substrate in a chamber.
- 2. Description of the Related Art
- The effectiveness of a substrate fabrication process is often measured by two related and important factors, which are device yield and the cost of ownership (CoO). These factors are important since they directly affect the cost to produce an electronic device and thus a device manufacturer's competitiveness in the market place. The CoO, while affected by a number of factors, is greatly affected by the system and chamber throughput, or simply the number of substrates per hour processed using a desired processing sequence.
- During certain substrate processing sequences, such as, for example, chemical vapor deposition processes (CVD) or plasma enhanced chemical vapor deposition processes (PECVD), it may be desirable to pre-treat a substrate prior to performing a deposition process. In certain pre-treatment processes, the substrate may be heated, for example, using an anneal process, to a first temperature prior to the deposition process. During the deposition process, the substrate is heated to a second temperature different than the first temperature. For many deposition processes, the substrate is placed on a substrate support comprising a heater. This heater is used to heat the substrate to both the first temperature and the second temperature. When there is some variance between the first temperature and the second temperature, for example, when the second temperature is higher than the first temperature, there is a delay between the pre-treatment process and the deposition process so that the temperature of the heater may be increased from the first temperature to the second temperature. This delay leads to an overall increase in substrate processing time and a corresponding decrease in device yield.
- Therefore there is a need for an apparatus and process that can position and heat a substrate in a processing chamber in a cost-effective and accurate manner.
- Embodiments of the present invention generally relate to apparatus and methods for processing semiconductor substrates. More particularly, embodiments of the present invention relate to an apparatus and methods for heating a substrate in a chamber. In one embodiment, an apparatus for positioning a substrate in a processing chamber is provided. The apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate, the first end portion comprising an upper end portion extending above the support surface of the substrate support for releasably contacting the peripheral edge of the substrate, a support tab positioned on the upper end portion, and a substrate support notch formed by an intersection of the support tab and the upper end portion, for supporting the substrate. The first end portion is movable between a first position and a second position. Movement from the first position to the second position causes the centering member to release the peripheral edge of the substrate and movement from the second position to the first position causes the centering member to push the substrate in a direction toward the reference axis or positions the centering members for supporting the substrate.
- In another embodiment a method for centering a substrate in a processing chamber is provided. A substrate support having an embedded heater and a heated support surface adapted to receive a substrate is provided. A plurality of centering members disposed along a circle centered at a reference axis substantially perpendicular to the support surface is provided. Each centering member comprises an end portion configured to contact a peripheral edge of the substrate, and the end portion is radially movable towards and away from the reference axis. A support tab is positioned on the end portion and a substrate support notch is formed at an intersection of the support tab and the end portion, for supporting the substrate at a distance from the support surface of the substrate support. The substrate is positioned on the support tabs of each of the plurality of centering members. A pre-treatment process is performed on the substrate at a first processing temperature of the substrate. The substrate is removed from the support tabs. The end portion of each centering member is moved radially outward and away from the reference axis. The substrate is placed on the substrate support, wherein the substrate and the centering members do not contact. The end portion of each centering member is moved radially inwards to contact a peripheral edge of the substrate for centering the substrate. The substrate is positioned with the end portions of the centering members. A deposition process is performed on the substrate at a second processing temperature of the substrate, wherein the first processing temperature is different than the second processing temperature.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a schematic cross-sectional view of one embodiment of a PECVD system according to embodiments described herein; -
FIG. 2A is a partially enlarged cross-sectional view of one embodiment of a centering finger ofFIG. 1 in a supporting position; -
FIG. 2B is a partially enlarged cross-sectional view of one embodiment of a centering finger ofFIG. 1 in a centering position; -
FIG. 2C is a partially enlarged cross-sectional view of one embodiment of a centering finger ofFIG. 1 in a disengaging position; -
FIG. 3A is a simplified overhead view of one embodiment of a centering mechanism using three centering fingers to support a substrate; -
FIG. 3B is a simplified overhead view of one embodiment of a centering mechanism using three centering fingers to center a substrate; -
FIG. 4 is a cross-sectional view showing one embodiment of a centering finger having an eccentric weighed portion; -
FIG. 5A is a partial cross-sectional view illustrating one embodiment of a centering finger in a supporting position; -
FIG. 5B is a partial cross-sectional view illustrating one embodiment of a centering finger in a centering position; -
FIG. 5C is a partial cross-sectional view illustrating one embodiment of a centering finger in a disengaging position; -
FIG. 6 is a partial cross-sectional view illustrating one embodiment of a centering finger; and -
FIG. 7 is a partial cross-sectional view illustrating one embodiment of a centering finger. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation.
- Embodiments described herein relate to an apparatus and method for heating and centering a substrate that are applicable for various chamber systems configured to apply diverse semiconductor processes on a substrate. Although the embodiments are exemplarily described for use in a deposition chamber, some embodiments may be applicable for other types of process chambers that necessitate heating and centering of a substrate. Examples include, without limitations, loadlock chambers, testing chambers, deposition chambers, etching chambers, and thermal treatment chambers.
-
FIG. 1 is a schematic cross-sectional view of one embodiment of aPECVD system 100 having a centeringmechanism 140. Thesystem 100 includes aprocess chamber 102 coupled to agas source 104. Theprocess chamber 102 haswalls 106 and a bottom 108 that partially define aprocess volume 110. Theprocess volume 110 may be accessed through aport 101 formed in thewalls 106 that facilitate movement of asubstrate 112 into and out of theprocess chamber 102. Thewalls 106 and bottom 108 may be fabricated from a unitary block of aluminum or other material compatible with processing. Thewalls 106 support alid assembly 114. Theprocess chamber 102 may be evacuated by avacuum pump 116. - A temperature controlled
substrate support assembly 120 may be centrally disposed within theprocess chamber 102. Thesupport assembly 120 may support asubstrate 112 during processing. In one embodiment, thesupport assembly 120 comprises asupport base 122 made of aluminum that may encapsulate at least one embeddedheater 103 operable to controllably heat thesupport assembly 120 and thesubstrate 112 positioned thereon to a predetermined temperature. In one embodiment, thesupport assembly 120 may operate to maintain thesubstrate 112 at a temperature between about 150 degrees Celsius (° C.) to about 1,000 degrees Celsius (° C.), depending on the deposition processing parameters for the material being deposited. In one embodiment, the support assembly may operate to maintain thesubstrate 112 at a temperature between about 250 degrees Celsius (° C.) to about 270 degrees Celsius (° C.), during a pre-treatment process such as an anneal process. In one embodiment, the support assembly may operate to maintain thesubstrate 112 at a temperature between about 350 degrees Celsius (° C.) to about 400 degrees Celsius (° C.), during a deposition process. - The
support assembly 120 may have anupper support surface 124 and alower surface 126. Theupper support surface 124 supports thesubstrate 112. Thelower surface 126 may have astem 128 coupled thereto. Thestem 128 couples thesupport assembly 120 to alift system 131 that moves thesupport assembly 120 vertically between an elevated processing position and a lowered position that facilitates substrate transfer to and from theprocess chamber 102. Thestem 128 additionally provides a conduit for purge gas and electrical and temperature monitoring leads between thesupport assembly 120 and other components of thesystem 100. A bellows 130 may be coupled between thestem 128 and thebottom 108 of theprocess chamber 102. The bellows 130 provides a vacuum seal between theprocess volume 110 and the atmosphere outside theprocess chamber 102 while facilitating vertical movement of thesupport assembly 120. - To facilitate the transfer of the
substrate 112, thesupport base 122 also includes a plurality ofopenings 133 through which lift pins 132 are movably mounted. The lift pins 132 are operable to move between a first position and a second position. The first position, shown inFIG. 1 , allows thesubstrate 112 to rest on theupper support surface 124 of thesupport base 122. The second position (not shown) lifts thesubstrate 112 above thesupport base 122 so that thesubstrate 112 can be transferred to a substrate handling robot coming through theport 101. Upward/downward movements of the lift pins 132 may be driven by amovable plate 134 connected to anactuator 136. - The
support base 122 may be electrically grounded such that RF power supplied by apower source 138 to a gas distribution plate assembly 141 positioned between thelid assembly 114 and the support base 122 (or other electrode positioned within or near the lid assembly of the chamber) may excite gases present in theprocess volume 110 between thesupport base 122 and the distribution plate assembly 141. The RF power from thepower source 138 may be selected commensurate with the size of thesubstrate 112 to drive the chemical vapor deposition process. - The
support assembly 120 further comprises a centeringmechanism 140 operable to center thesubstrate 112 relative to a vertical reference axis Z perpendicular to the substrate support plane of thesupport base 122. The centeringmechanism 140 is also operable to support thesubstrate 112 at a distance parallel to a surface of thesupport base 122. The centeringmechanism 140 comprises three or more movable centeringfingers 142 positioned at a periphery of thesupport base 122, and an opposingplate 144 placed below thefingers 142. Eachfinger 142 is pivotally mounted on thesupport base 122 via ashaft 146. The opposingplate 144 and thesupport base 122 are relatively movable so that the opposingplate 144 may contact and pivot thefingers 142 in a release position and stay free from thefingers 142 in a centering position or supporting position. - In one embodiment, the opposing
plate 144 is stationary and the relative movement between thesupport base 122 and the opposingplate 144 is due to the vertical movement of thesupport base 122. When there is nosubstrate 112 positioned on thesupport base 122, thefingers 142 engage in a supporting position for supporting thesubstrate 112 as shown inFIG. 2A . When thesubstrate 112 is positioned on thesupport base 122, thefingers 142 engage on the peripheral edge of thesubstrate 112 to center thesubstrate 112 when thesupport assembly 120 is in an elevated position as shown inFIG. 1 andFIG. 2B , and disengage from the peripheral edge of thesubstrate 112 when thesupport assembly 120 is in a lowered position as shown inFIG. 2C . Further details of the centeringmechanism 140 and its operation will be described hereafter. - The
process chamber 102 may additionally comprise a circumscribingshadow frame 150. Theshadow frame 150 is positioned to prevent deposition at the edge of thesubstrate 112, thesupport assembly 120, and the centeringmechanism 142 to reduce flaking and particle contamination in theprocess chamber 102. - The
lid assembly 114 provides an upper boundary to theprocess volume 110. Thelid assembly 114 may be removed or opened to service theprocess chamber 102. In one embodiment, thelid assembly 114 may be fabricated from aluminum. - The
lid assembly 114 may include anentry port 160 through which process gases provided by thegas source 104 may be introduced into theprocess chamber 102. A gas distribution plate assembly 141 may be coupled to an interior side of thelid assembly 114. The gas distribution plate assembly 141 includes anannular base plate 162 having ablocker plate 164 disposed intermediate to a faceplate (or shower head) 166. Theblocker plate 164 provides an even gas distribution to a backside of thefaceplate 166. The processing gas from theentry port 160 enters a firsthollow volume 168 partially limited between theannular base plate 162 and theblocker plate 164, and then flows through a plurality ofpassages 170 formed in theblocker plate 164 into asecond volume 172 between theblocker plate 164 and thefaceplate 166. The processing gas then enters theprocess volume 110 from thesecond volume 172 through a plurality ofpassages 174 formed in thefaceplate 166. Thefaceplate 166 is isolated via aninsulator material 176. Theannular base plate 162,blocker plate 164 andfaceplate 166 may be fabricated from stainless steel, aluminum, anodized aluminum, nickel or any other RF conductive material. - The
power source 138 applies a radio frequency (RF) bias potential to theannular base plate 162 to facilitate the generation of plasma between thefaceplate 166 and thesupport base 122. Thepower source 138 may include a high frequency RF power source (“HFRF power source”) capable of generating an RF power at about 13.56 MHz, or a low frequency RF power source (“LFRF power source”) generating an RF power at about 300 kHz. The LFRF power source provides both low frequency generation and fixed match elements. The HFRF power source is designed for use with a fixed match and regulates the power delivered to the load, eliminating concerns about forward and reflected power. - As shown in
FIG. 1 , acontroller 180 may interface with and control various components of the substrate processing system. Thecontroller 180 may include a central processing unit (CPU) 182,support circuits 184 and amemory 186. - The
substrate 112 is transferred to the lift pins 132 in thechamber 102 by a conveyor that may be a robot or other transfer mechanism (not shown), and then placed on theupper support surface 124 of thesupport assembly 120 by moving the lift pins 132 downward. As will be discussed below, the centeringmechanism 140 then is operated to center thesubstrate 112 relative to the reference axis Z. - In one embodiment, one or
more temperature sensors 190 are positioned to monitor the temperature of the backside of thesubstrate 112. In one embodiment, the one ormore temperature sensors 190, such as a fiber optic temperature sensor, are coupled to thecontroller 140 to provide a metric indicative of the temperature profile of the backside of thesubstrate 112. In one embodiment, the data provided by the one ormore temperature sensors 190 may be used in a feedback loop to control the temperature of the embeddedheater 103. In one embodiment, the one or more temperature sensors are positioned in the support base. - In one embodiment a purge gas may be provided to the backside of the
substrate 112 through one or morepurge gas inlets 192 connected to apurge gas source 194. The purge gas flown toward the backside of thesubstrate 112 helps prevent particle contamination caused by deposition on the backside of thesubstrate 112 when thesubstrate 112 is supported by the centeringmechanism 142. The purge gas may also be used as a form of temperature control to cool the backside of thesubstrate 112. In one embodiment, the flow of purge gas may be controlled in response to the data provided by the one ormore temperature sensors 190. -
FIG. 2A is a partially enlarged cross-sectional view of one embodiment of a centeringfinger 142 ofFIG. 1 in a supporting position. As shown inFIG. 2A , in the supporting position, thesubstrate 112 rests on the centeringfinger 142. While resting on the centeringfinger 142, thesubstrate 112 is positioned at a distance “A” from the surface of thesupport assembly 144. The distance “A” between thesubstrate 112 and theupper support surface 124 of thesupport base 122 is chosen such that the thermal resistance between thesubstrate 112 and theheater 103 creates a different temperature on theelevated substrate 112 as compared to when the substrate rests on theupper support surface 124 of thesupport assembly 122 without having to change the setpoint temperature of theheater 103. The ability to change the temperature of thesubstrate 112 without changing the setpoint temperature of theheater 103 allows for back-to-back process steps to be performed without the delay of waiting for the heater to either increase in temperature or decrease in temperature in between processing steps. Thus leading to an overall decrease in substrate processing time and a corresponding increase in device yield. - The centering
finger 142 may be made in a single piece, or formed from the assembly of multiple component parts. Materials used for thefinger 142 may include aluminum nitride, aluminum oxide, ceramics and similar materials or combinations thereof that have a low coefficient of thermal expansion and are resistant to the processing environment in thechamber 102. Thefinger 142 is pivotally mounted via theshaft 146 to ajoint block 290 protruding from thelower surface 126 of thesupport base 122, and passes through aslot 292 in a peripheral region of thesupport base 122. Anupper end portion 294 of thefinger 142 extends above thesupport surface 124 of thesupport base 122 to releasably contact with thesupport surface 124 of thesupport base 122. Asupport tab 298 for supporting thesubstrate 112 is positioned on theupper end portion 294 of thefinger 142. Asubstrate support notch 299 is formed at an intersection of thesupport tab 298 with theupper end portion 294. Alower end portion 296 of thefinger 142 is located eccentric from theshaft 146. Thelower end portion 296 is weighted to bias thefinger 142 by gravity action into a position to contact with thesupport surface 124 of thesupport base 122. As shown, when thefinger 142 loses contact with the opposingplate 144, which may be achieved by moving thesupport assembly 120 upward in one example of implementation, the gravity action G exerted on thelower end portion 296 thereby causes thefinger 142 to pivot about theshaft 146, so that theupper end portion 294 moves radially inward to contact thesupport surface 124 of thesupport base 122. As further discussed inFIGS. 3A and 3B , the three or more fingers 242 are evenly distributed along a periphery of the substrate 212 and coordinately move to support thesubstrate 112. -
FIG. 2B is a partially enlarged cross-sectional view illustrating one centeringfinger 142 in a centering position. As shown inFIG. 2B , when thefinger 142 loses contact with the opposingplate 144, which may be achieved by moving thesupport assembly 120 upward in one example of implementation, the gravity action G exerted on thelower end portion 296 thereby causes thefinger 142 to pivot about theshaft 146, so that theupper end portion 294 moves radially inward to contact and exert a displacement force F on the peripheral edge of thesubstrate 112 in a direction toward the reference axis Z. It is worth noting that the thickness of theupper end portion 294 may be designed slightly higher than the top surface of thesubstrate 112. When the displacement force F is applied by theupper end portion 294, the peripheral edge of thesubstrate 112 can thereby be prevented from slipping over theupper end portion 294. - To release the
substrate 112,FIG. 2C is a partially enlarged cross-sectional view illustrating the centeringfinger 142 in a disengaging position. Thesupport base 122 may be moved downward so as to push thelower end portion 296 of thefinger 142 into contact against the opposingplate 144, which counteracts the gravity action exerted on thelower end portion 296. As a result, thefinger 142 is caused to pivot in an opposite direction so that theupper end portion 294 moves out of contact with the peripheral edge of thesubstrate 112. - As has been described above, the construction of the centering
mechanism 140 thus is able to automatically support thesubstrate 112 by using the gravity action to bias each centeringfinger 142. The location of the centeringfingers 142 on thesupport assembly 120 may depend on the contour shape of the substrate to center. -
FIG. 3A is a simplified overhead view of one embodiment in which three centeringfingers 142 may be used to support acircular substrate 112 at a distance from thesupport base 122. The three centeringfingers 142 are regularly spaced around a circle centered on the reference axis Z. The combination of eachsupport tab 298 and theupper end portion 294 of each finger form a pocket for supporting the edge of thecircular substrate 112. In other embodiments not shown, more centering fingers may be positioned in different arrangements to support other substrates of different contour shapes. -
FIG. 3B is a simplified overhead view of one embodiment of a centeringmechanism 142 using three centering fingers to center asubstrate 112. The three centeringfingers 142 are regularly spaced around a circle centered on the reference axis Z, and eachfinger 142 is able to apply a radial displacement force F to center thecircular substrate 112. In other embodiments not shown, more centering fingers may be positioned in different arrangements to center other substrates of different contour shapes. - To effectively center the
substrate 112, each centeringfinger 142 also needs to apply a sufficient amount of displacement force F to move thesubstrate 112, which is in relation to the mass included in the weightedlower end portion 296. In one implementation, the included mass may be in a range between about 10 grams to about 500 grams. Various ways may be implemented to include the proper mass in thelower end portion 296, such as by forming a massivelower end portion 296 of a larger size. -
FIG. 4 illustrates a variant embodiment in which an embeddedsolid material 402 of a higher mass density may be used to form the weightedlower end portion 296 of the centering finger 242. Methods to embed thesolid material 402 in thefinger 142 may include, for example, sintering a ceramic material used for making thefinger 142 around thesolid material 402. Thesolid material 402 may be molybdenum or other suitable materials of a mass density higher than the surrounding material used for thefinger 142. In implementations that may impose limits on the size of the weightedlower end portion 296, the use of the embeddedmaterial 402 of a higher mass density allows effectively increasing the mass of the weightedlower end portion 296 without increasing its size. - While the foregoing embodiments illustrate certain specific ways to implement and operate the centering mechanism, many variations may be envisioned. For examples, in alternate embodiments described hereafter, other constructions may be implemented for each centering finger.
-
FIGS. 5A-5C are partial cross-sectional views illustrating another embodiment of a centeringfinger 542. The centeringfinger 542 is pivotally mounted to abracket 543, which extends out of an outer boundary of thesupport base 122, via ashaft 546. The support surface of thesupport base 122 may be smaller than the surface area of thesubstrate 112, so that a peripheral portion of thesubstrate 112 in place on thesupport base 122 is free of support contact. Like the embodiments described above, thefinger 542 includes anupper end portion 594 adapted to contact with the peripheral edge of thesubstrate 112 when the finger is in a centering position as shown inFIG. 5B and asupport tab 598 for supporting the substrate when thefinger 542 is in a supporting position as shown inFIG. 5A . Thefinger 542 further includes a weightedlower end portion 596 eccentric from theshaft 546 to bias thefinger 542 into a position against the surface of thesupport base 122 when thefinger 542 is in a supporting position. The weightedlower end portion 596 also biases thefinger 542 against the peripheral edge of the substrate 512 when thefinger 542 is in the centering position. In addition, thefinger 542 includes adistal prong 590 that is opposite thelower end portion 596 relative to theshaft 546, and is arranged below an opposingplate 544. As shown inFIG. 5A , to support thesubstrate 112, thelower end portion 596 of the centeringfinger 542 is subject to the gravity action G that biases thefinger 542 and causes theupper end portion 594 to contact the surface of thesupport base 122. As shown inFIG. 5B , to center thesubstrate 112, thelower end portion 596 of the centeringfinger 542 is subject to the gravity action G that biases thefinger 542 and causes theupper end portion 594 to apply the displacement force F on the peripheral edge of thesubstrate 112. - As shown in
FIG. 5C , to disengage theupper end portion 594 from the peripheral edge of thesubstrate 112 or the surface of thesupport base 122, thesupport assembly 120 may be moved upward so that thedistal prong 590 comes into contact with the opposingplate 544. As thesupport assembly 120 moves further upward relative to the opposingplate 544, the gravity action on thelower end portion 596 is overcome and thefinger 542 rotates about theshaft 546 to disengage theupper end portion 594 from the peripheral edge of thesubstrate 112. In one embodiment, thefinger 542 may be released during processing upon centering, thus preventing undesired deposition on theupper end portion 594, and reducing non-uniformity of the process due to the presence of thefinger 542. It is worth noting that instead of moving thesupport assembly 120 carrying thefinger 542 relative to the opposingplate 544, alternate embodiments may design the opposingplate 544 movable relative to thesupport assembly 120 to contact thedistal prong 590 and cause theupper end portion 594 to disengage from thesubstrate 112. -
FIG. 6 is a partial cross-sectional view illustrating another variant embodiment of a centeringfinger 642. Like the previous embodiments, the centeringfinger 642 is pivotally mounted on thesupport base 122 via ashaft 646. The centeringfinger 642 includes anupper end portion 694 and asupport tab 698 adapted to support thesubstrate 112, and a weightedlower end portion 696 eccentric from theshaft 646 to bias thefinger 642 under the gravity action. However, unlike the previous embodiments, the eccentricity of thelower end portion 696 relative to theshaft 646 is configured to bias thefinger 642 into a position that disengages theupper end portion 694 from thesubstrate 112. To position the centeringfinger 642 in a supporting position, an opposingplate 650 that is coupled to a servo orstep motor 652 and acontroller 654 is controllably moved to interact with thefinger 642. More specifically, the opposingplate 650 moves upward to push on thelower end portion 696 and cause thefinger 642 to pivot about theshaft 646 and leave the biased position. Thecontroller 654 receives anoperation signal 653 from themotor 652, and accordingly issues a control signal to themotor 652 to control the output of themotor 652. The controlled range of upward motion of the opposingplate 650 thereby causes a controlled displacement of theupper end portion 694 to move and support thesubstrate 112. - In embodiments, where the centering
finger 642 is in a centering position, thesupport tab 698 contacts a peripheral edge of thesubstrate 112 and the weightedlower end portion 696 moves eccentric from theshaft 646 to bias thefinger 642 under the gravity action. - In one embodiment, the
controller 654 monitors the force applied to a substrate being centered by each centeringfinger 642 using theoperation signal 653. In one embodiment, theoperation signal 653 may be torque of themotor 652. When theoperation signal 653, e.g., torque of themotor 652, reaches a critical value indicating the force applied to the substrate being centered reaches a predetermined amount, thus, the substrate is adequately centered. Thecontroller 654 then stops tomotor 652 to avoid over centering, thus, preventing damages to the substrate. - To disengage the
upper end portion 694 fromsubstrate 112, the opposingplate 650 moves downward, which causes thefinger 642 to recover the biased position under the gravity action applied on the weightedlower end portion 696. -
FIG. 7 is a partial cross-sectional view illustrating yet another embodiment of a centeringfinger 742. The centeringfinger 742 is formed as a resilient member, such as an elongated ceramic spring, that has afirst end 752 fixedly mounted on aframe 748 separate from the support base 722, and asecond end 754 extending above the support base 722 through anopening 756 formed in the support base 722. Thesecond end 754 comprises asupport ledge 758 for supporting thesubstrate 112 when the centeringfinger 742 is in a supporting position. In one embodiment, to center thesubstrate 112 relative to the reference axis Z, thefinger 742 is biased to push on the peripheral edge of thesubstrate 112 in a direction toward the reference axis Z. To disengage thefinger 742 from the contact with the substrate 712, an opposingactuator 760 may be controllably moved to interact with thefinger 742. Theactuator 760 may come into contact with thefinger 742, and push on thefinger 742 that thereby deflects away from its biased position to disengage from the substrate 712. - Process:
- Methods for centering a substrate in a processing chamber are also provided. Although discussed with reference to
FIGS. 2A-2C , it should be understood that these methods are applicable to any processing system involving the heating and centering of a substrate. - In one embodiment, a
substrate support assembly 120 having an embeddedheater 103 and aheated support surface 124 adapted to receive asubstrate 112 is provided. A plurality of centeringmembers 142 disposed along a circle centered at a reference axis “Z” substantially perpendicular to thesupport surface 124 is provided. Each centeringmember 142 comprises anend portion 294 configured to contact a peripheral edge of thesubstrate 112, and theend portion 294 is radially movable towards and away from the reference axis “Z”. Asupport tab 298 is positioned on theend portion 294 and asubstrate support notch 299 is formed at an intersection of thesupport tab 298 and theend portion 294, for supporting thesubstrate 112 at a distance “A” from thesupport surface 124 of thesubstrate support assembly 120. In one embodiment, the distance “A” between theheated support surface 124 and thesubstrate 112 is selected such that the thermal resistance between theheated support surface 124 and thesubstrate 112 creates a different temperature on thesubstrate 112 without changing a setpoint temperature of theheater 103. - In one embodiment, the
substrate 112 is positioned on thesupport tabs 298 of each of the plurality of centeringmembers 124. In one embodiment, the combination of eachsupport tab 298 and theupper end portion 294 of each of the plurality of centeringmembers 142 form a pocket for supporting the edge of thecircular substrate 112 and thesubstrate 112 is positioned within the pocket. - In one embodiment, a pre-treatment process is performed on the
substrate 112 at a first processing temperature of thesubstrate 112. In one embodiment, the pre-treatment process is an anneal process. In one embodiment, the anneal process is performed at a substrate temperature of between about 250° C. and about 270° C. - In one embodiment, after the pre-treatment process, the
substrate 112 is removed from thesupport tabs 298. Theend portion 294 of each centeringmember 142 is moved radially outward and away from the reference axis “Z”. Thesubstrate 112 is placed on thesubstrate support assembly 120, wherein thesubstrate 112 and the centeringmembers 142 do not contact. Theend portion 294 of each centeringmember 142 is moved radially inwards to contact a peripheral edge of thesubstrate 112 for centering thesubstrate 112. Thesubstrate 112 is centered using theend portions 294 of the centeringmembers 142. - In one embodiment, after centering the
substrate 112, a deposition process is performed on thesubstrate 112 at a second processing temperature of the substrate, wherein the first processing temperature is different than the second processing temperature. In one embodiment, the second processing temperature is between about 350° C. and about 400° C. - In one embodiment, a setpoint temperature of the
heater 103 is the same for both the pretreatment process and the deposition process. In one embodiment, the setpoint temperature of theheater 103 is the same as the temperature of the deposition process. In one embodiment, the setpoint temperature of theheater 103 is between about 350° C. and about 400° C. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (25)
1. An apparatus for positioning a substrate in a processing chamber, comprising:
a substrate support assembly having a support surface adapted to receive the substrate; and
a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface, wherein the plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises:
a first end portion for either contacting or supporting a peripheral edge of the substrate, the first end portion comprising:
an upper end portion extending above the support surface of the substrate support for releasably contacting the peripheral edge of the substrate;
a support tab positioned on the upper end portion; and
a substrate support notch formed by the intersection of the support tab and the upper end portion, for supporting the substrate, wherein the first end portion is movable between a first position and a second position, a movement from the first position to the second position causes the centering member to release the peripheral edge of the substrate, and a movement from the second position to the first position causes the centering member to push the substrate in a direction toward the reference axis or positions the centering members for supporting the substrate.
2. The apparatus of claim 1 , wherein the substrate support assembly encapsulates at least one embedded heater operable to controllably heat the substrate support assembly and the substrate positioned thereon to a predetermined temperature.
3. The apparatus of claim 1 , further comprising a circumscribing shadow frame positioned to prevent deposition on the peripheral edge of the substrate, the support assembly, and the plurality of centering members for reducing flaking and particle contamination in the process chamber.
4. The apparatus of claim 2 , further comprising:
a fiber optic temperature sensor for providing a metric indicative of the temperature profile of the backside of the substrate.
5. The apparatus of claim 4 , wherein the fiber optic temperature sensor is positioned in the substrate support assembly.
6. The apparatus of claim 2 , further comprising:
one or more purge gas inlets coupled with a purge gas source for supplying purge gas to a backside of the substrate for preventing particle contamination caused by deposition on the backside of the substrate when the substrate is supported by the centering members.
7. The apparatus of claim 6 , wherein the one or more purge gas inlets are positioned in the substrate support assembly.
8. The apparatus of claim 1 , further comprising an opposing member for interacting with each of the plurality of centering members to move the first end portion.
9. The apparatus of claim 8 , wherein each of the plurality of centering members is pivotally mounted on the substrate support via a shaft.
10. The apparatus of claim 9 , wherein the opposing member is configured to move the first end portion of each of the plurality of centering members towards the second position, and each of the plurality of centering members is independently biased towards the first position, and combination of biasing forces from the plurality of centering members centers the substrate relative to the reference axis.
11. The apparatus of claim 10 , wherein each of the centering members further comprises:
a weighted portion eccentric from the shaft, wherein the first end portion and weighted portion are disposed on opposing sides of the shaft, and the weighted portion is configured to bias the centering member into the first position.
12. The apparatus of claim 11 , wherein the opposing member comprises a movable member coupled to a motor.
13. The apparatus of claim 12 , further comprising a controller configured to monitor an operation signal of the motor, wherein the opposing member is configured to move the first end portion of each of the plurality of centering members towards the first position, and the controller is configured to determine an end point of centering by monitoring the operation signal of the motor.
14. The apparatus of claim 1 , wherein each of the centering members is made of a material including ceramic, aluminum nitride, aluminum oxide, aluminum, and combinations thereof.
15. The apparatus of claim 1 , wherein the support tabs of each of the plurality of centering members form a substrate receiving pocket for supporting the substrate.
16. A method for centering a substrate in a processing chamber, comprising:
providing a substrate support having an embedded heater and a heated support surface adapted to receive a substrate;
providing a plurality of centering members disposed along a circle centered at a reference axis substantially perpendicular to the support surface, each centering member comprising:
an end portion configured to contact a peripheral edge of the substrate, and the end portion is radially movable towards and away from the reference axis;
a support tab positioned on the end portion; and
a substrate support notch formed at an intersection of the support tab and the end portion, for supporting the substrate at a distance from the support surface of the substrate support;
positioning the substrate on the support tabs of each of the plurality of centering members;
performing a pre-treatment process on the substrate at a first processing temperature of the substrate;
removing the substrate from the support tabs;
moving the end portion of each centering member radially outward and away from the reference axis;
placing the substrate on the substrate support, wherein the substrate and the centering members do not contact;
moving the end portion of each centering members to radially inwards to contact with a peripheral edge of the substrate for centering the substrate;
positioning the substrate with the end portions of the centering members; and
performing a deposition process on the substrate at a second processing temperature of the substrate, wherein the first processing temperature is different than the second processing temperature.
17. The method of claim 16 , wherein the distance between the heated support surface and the substrate is selected such that the thermal resistance between the heated support surface and the substrate create a different temperature on the substrate without changing a setpoint temperature of the heater.
18. The method of claim 16 , wherein a setpoint temperature of the heater is the same for both the pretreatment process and the deposition process.
19. The method of claim 16 , wherein the first processing temperature of the substrate is between about 250° C. and about 270° C. and the second processing temperature of the substrate is between about 350° C. and about 400° C.
20. The method of claim 16 , wherein moving the end portion of each centering members comprises pivoting each of the centering members about a shaft mounted on the substrate support.
21. The method of claim 16 , wherein moving the end portion of each centering member radially inwards comprises releasing a weighted portion eccentrically coupled to the centering member from the shaft, and moving the end portion of each centering member radially outwards comprising lifting the weight portion with an opposing member.
22. The method of claim 16 , wherein moving the end portion of each centering member radially inwards comprises pivoting the centering member from the shaft using an opposing member, and moving the end portion of each centering member radially outwards comprising releasing the centering member from the opposing member.
23. The method of claim 22 , wherein moving the end portion of each centering member further comprises:
monitoring an operational signal of a motor driving the opposing member, wherein the operational signal corresponds to a centering force applied from the centering member to the substrate; and
stopping the opposing member when the centering force reaches a critical value.
24. The method of claim 16 , wherein each of the centering members comprises a resilient member biased radially towards the reference axis, and moving the end portion of each centering members radially outwards comprises pushing the resilient member using an opposing member, and moving the end portion of each centering member radially inwards comprising releasing the centering member from the opposing member.
25. The method of claim 16 , wherein pivoting the centering members comprises interacting the centering members with an opposing member.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/851,794 US20110034034A1 (en) | 2009-08-07 | 2010-08-06 | Dual temperature heater |
US14/875,392 US10325799B2 (en) | 2009-08-07 | 2015-10-05 | Dual temperature heater |
US16/443,185 US11133210B2 (en) | 2009-08-07 | 2019-06-17 | Dual temperature heater |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23217209P | 2009-08-07 | 2009-08-07 | |
US12/851,794 US20110034034A1 (en) | 2009-08-07 | 2010-08-06 | Dual temperature heater |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/875,392 Continuation US10325799B2 (en) | 2009-08-07 | 2015-10-05 | Dual temperature heater |
Publications (1)
Publication Number | Publication Date |
---|---|
US20110034034A1 true US20110034034A1 (en) | 2011-02-10 |
Family
ID=43535135
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/851,794 Abandoned US20110034034A1 (en) | 2009-08-07 | 2010-08-06 | Dual temperature heater |
US14/875,392 Active 2031-07-12 US10325799B2 (en) | 2009-08-07 | 2015-10-05 | Dual temperature heater |
US16/443,185 Active 2031-03-03 US11133210B2 (en) | 2009-08-07 | 2019-06-17 | Dual temperature heater |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/875,392 Active 2031-07-12 US10325799B2 (en) | 2009-08-07 | 2015-10-05 | Dual temperature heater |
US16/443,185 Active 2031-03-03 US11133210B2 (en) | 2009-08-07 | 2019-06-17 | Dual temperature heater |
Country Status (6)
Country | Link |
---|---|
US (3) | US20110034034A1 (en) |
JP (1) | JP5902085B2 (en) |
KR (1) | KR101681897B1 (en) |
CN (1) | CN102498558B (en) |
TW (1) | TWI520259B (en) |
WO (1) | WO2011017060A2 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
WO2013162820A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
US20150211114A1 (en) * | 2014-01-30 | 2015-07-30 | Applied Materials, Inc. | Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects |
CN105225995A (en) * | 2014-06-30 | 2016-01-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer transmission set and processing chamber |
US20160240425A1 (en) * | 2015-02-16 | 2016-08-18 | Tokyo Electron Limited | Substrate holding mechanism and substrate processing apparatus using the same |
US20180016698A1 (en) * | 2016-07-13 | 2018-01-18 | Ebara Corporation | Substrate holder and plating apparatus using the same |
US20180047612A1 (en) * | 2016-08-10 | 2018-02-15 | Veeco Precision Surface Processing Llc | Two-level Tape Frame Rinse Assembly |
TWI623965B (en) * | 2014-04-08 | 2018-05-11 | 攀時歐洲公司 | Supporting system for a heating element |
WO2020159708A1 (en) * | 2019-01-31 | 2020-08-06 | Lam Research Corporation | Showerhead with configurable gas outlets |
US11236435B2 (en) * | 2018-11-21 | 2022-02-01 | Ebara Corporation | Method for holding substrate on substrate holder |
US20230062042A1 (en) * | 2021-08-24 | 2023-03-02 | Deviceeng Co. Ltd | Substrate support assembly for substrate treatment apparatus |
US11766765B2 (en) | 2018-11-30 | 2023-09-26 | Semes Co., Ltd. | Substrate treatment apparatus |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10153185B2 (en) * | 2013-03-14 | 2018-12-11 | Applied Materials, Inc. | Substrate temperature measurement in multi-zone heater |
US10631370B2 (en) * | 2015-10-30 | 2020-04-21 | Ngk Insulators, Ltd. | Member for semiconductor manufacturing apparatus, method for producing the same, and heater including shaft |
US20170352569A1 (en) * | 2016-06-06 | 2017-12-07 | Applied Materials, Inc. | Electrostatic chuck having properties for optimal thin film deposition or etch processes |
JP6847610B2 (en) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | Heat treatment equipment |
US10535538B2 (en) * | 2017-01-26 | 2020-01-14 | Gary Hillman | System and method for heat treatment of substrates |
KR20230058534A (en) * | 2018-03-23 | 2023-05-03 | 엔지케이 인슐레이터 엘티디 | Multi-zone heater |
CN114223053A (en) * | 2019-08-08 | 2022-03-22 | 京瓷株式会社 | Clamp and cleaning device |
US20210130960A1 (en) * | 2019-11-04 | 2021-05-06 | Applied Materials, Inc. | Systems and methods for substrate support temperature control |
US11495483B2 (en) * | 2020-10-15 | 2022-11-08 | Applied Materials, Inc. | Backside gas leakby for bevel deposition reduction |
CN217903099U (en) * | 2022-09-02 | 2022-11-25 | 台湾积体电路制造股份有限公司 | Bearing device and wafer cooling system |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5871811A (en) * | 1986-12-19 | 1999-02-16 | Applied Materials, Inc. | Method for protecting against deposition on a selected region of a substrate |
US5954072A (en) * | 1997-01-24 | 1999-09-21 | Tokyo Electron Limited | Rotary processing apparatus |
US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
US6167893B1 (en) * | 1999-02-09 | 2001-01-02 | Novellus Systems, Inc. | Dynamic chuck for semiconductor wafer or other substrate |
US6478924B1 (en) * | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
US20040194706A1 (en) * | 2002-12-20 | 2004-10-07 | Shulin Wang | Method and apparatus for forming a high quality low temperature silicon nitride layer |
US6986636B2 (en) * | 2000-06-09 | 2006-01-17 | Brooks Automation, Inc. | Device for positioning disk-shaped objects |
US20060157998A1 (en) * | 2005-01-18 | 2006-07-20 | Elik Gershenzon | Contamination-free edge gripping mechanism and method for loading/unloading and transferring flat objects |
US20090097184A1 (en) * | 2007-10-12 | 2009-04-16 | Applied Materials, Inc. | Electrostatic chuck assembly |
US20090110520A1 (en) * | 2007-10-31 | 2009-04-30 | Dinesh Kanawade | Advanced fi blade for high temperature extraction |
US8210190B2 (en) * | 2007-09-04 | 2012-07-03 | Tokyo Electron Limited | Treatment apparatus, treatment method and storage medium |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07102372A (en) * | 1993-10-01 | 1995-04-18 | Nissin Electric Co Ltd | Vacuum treatment of material and device therefor |
US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
JPH1140656A (en) * | 1997-07-22 | 1999-02-12 | Dainippon Screen Mfg Co Ltd | Substrate rotation holding device and rotational substrate processor |
JP3661138B2 (en) * | 1998-04-04 | 2005-06-15 | 東京エレクトロン株式会社 | High-speed alignment mechanism |
JPH11297802A (en) * | 1998-04-07 | 1999-10-29 | Mitsubishi Electric Corp | Electrostatic adsorption device and vacuum device mounted therewith |
US6146463A (en) * | 1998-06-12 | 2000-11-14 | Applied Materials, Inc. | Apparatus and method for aligning a substrate on a support member |
TW452917B (en) | 1999-10-29 | 2001-09-01 | Winbond Electronics Corp | Holder |
JP2001274226A (en) * | 2000-03-28 | 2001-10-05 | Sony Corp | Wafer support device |
JP4627392B2 (en) * | 2001-09-26 | 2011-02-09 | 株式会社アルバック | Vacuum processing apparatus and vacuum processing method |
JP3897344B2 (en) * | 2002-08-23 | 2007-03-22 | 株式会社オングストロームテクノロジーズ | Chucking state detection method and plasma processing apparatus |
US7350315B2 (en) | 2003-12-22 | 2008-04-01 | Lam Research Corporation | Edge wheel dry manifold |
US20050160992A1 (en) * | 2004-01-28 | 2005-07-28 | Applied Materials, Inc. | Substrate gripping apparatus |
JP2006310709A (en) * | 2005-05-02 | 2006-11-09 | Hitachi Plant Technologies Ltd | Holding device and method for semiconductor wafer |
JP2007102372A (en) | 2005-09-30 | 2007-04-19 | Toshiba Corp | Paper sheet processor |
JP4873129B2 (en) * | 2006-02-16 | 2012-02-08 | 株式会社安川電機 | Substrate gripping device |
US8440049B2 (en) | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
JP2008047588A (en) * | 2006-08-11 | 2008-02-28 | Matsushita Electric Ind Co Ltd | Substrate processing apparatus and substrate processing method |
US8951351B2 (en) | 2006-09-15 | 2015-02-10 | Applied Materials, Inc. | Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects |
JP4824588B2 (en) * | 2007-01-22 | 2011-11-30 | 株式会社アルバック | Substrate alignment device |
KR101545525B1 (en) * | 2007-07-12 | 2015-08-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and method for processing a substrate edge region |
JP5486238B2 (en) | 2009-08-17 | 2014-05-07 | 日本電信電話株式会社 | Microstructure formation method |
-
2010
- 2010-07-26 KR KR1020127006087A patent/KR101681897B1/en active IP Right Grant
- 2010-07-26 JP JP2012523640A patent/JP5902085B2/en active Active
- 2010-07-26 CN CN201080035135.1A patent/CN102498558B/en active Active
- 2010-07-26 WO PCT/US2010/043274 patent/WO2011017060A2/en active Application Filing
- 2010-07-28 TW TW099124957A patent/TWI520259B/en active
- 2010-08-06 US US12/851,794 patent/US20110034034A1/en not_active Abandoned
-
2015
- 2015-10-05 US US14/875,392 patent/US10325799B2/en active Active
-
2019
- 2019-06-17 US US16/443,185 patent/US11133210B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5871811A (en) * | 1986-12-19 | 1999-02-16 | Applied Materials, Inc. | Method for protecting against deposition on a selected region of a substrate |
US5954072A (en) * | 1997-01-24 | 1999-09-21 | Tokyo Electron Limited | Rotary processing apparatus |
US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
US6167893B1 (en) * | 1999-02-09 | 2001-01-02 | Novellus Systems, Inc. | Dynamic chuck for semiconductor wafer or other substrate |
US6478924B1 (en) * | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
US6986636B2 (en) * | 2000-06-09 | 2006-01-17 | Brooks Automation, Inc. | Device for positioning disk-shaped objects |
US20040194706A1 (en) * | 2002-12-20 | 2004-10-07 | Shulin Wang | Method and apparatus for forming a high quality low temperature silicon nitride layer |
US20060157998A1 (en) * | 2005-01-18 | 2006-07-20 | Elik Gershenzon | Contamination-free edge gripping mechanism and method for loading/unloading and transferring flat objects |
US8210190B2 (en) * | 2007-09-04 | 2012-07-03 | Tokyo Electron Limited | Treatment apparatus, treatment method and storage medium |
US20090097184A1 (en) * | 2007-10-12 | 2009-04-16 | Applied Materials, Inc. | Electrostatic chuck assembly |
US20090110520A1 (en) * | 2007-10-31 | 2009-04-30 | Dinesh Kanawade | Advanced fi blade for high temperature extraction |
Non-Patent Citations (3)
Title |
---|
English translation of Eisuke et al, JP-2008-177507. * |
English translation of Masashi et al JP 11-297802. * |
English translation of Susumu, JP 2003-100851. * |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110136347A1 (en) * | 2009-10-21 | 2011-06-09 | Applied Materials, Inc. | Point-of-use silylamine generation |
US9948214B2 (en) | 2012-04-26 | 2018-04-17 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
WO2013162820A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
US20150211114A1 (en) * | 2014-01-30 | 2015-07-30 | Applied Materials, Inc. | Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects |
TWI623965B (en) * | 2014-04-08 | 2018-05-11 | 攀時歐洲公司 | Supporting system for a heating element |
CN105225995A (en) * | 2014-06-30 | 2016-01-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer transmission set and processing chamber |
US20160240425A1 (en) * | 2015-02-16 | 2016-08-18 | Tokyo Electron Limited | Substrate holding mechanism and substrate processing apparatus using the same |
US10790182B2 (en) * | 2015-02-16 | 2020-09-29 | Tokyo Electron Limited | Substrate holding mechanism and substrate processing apparatus using the same |
US20180016698A1 (en) * | 2016-07-13 | 2018-01-18 | Ebara Corporation | Substrate holder and plating apparatus using the same |
US10793967B2 (en) * | 2016-07-13 | 2020-10-06 | Ebara Corporation | Substrate holder and plating apparatus using the same |
US20180047612A1 (en) * | 2016-08-10 | 2018-02-15 | Veeco Precision Surface Processing Llc | Two-level Tape Frame Rinse Assembly |
US10559488B2 (en) * | 2016-08-10 | 2020-02-11 | Veeco Precision Surface Processing Llc | Two-level tape frame rinse assembly |
TWI733875B (en) * | 2016-08-10 | 2021-07-21 | 美商維克儀器公司 | Two-level tape frame rinse assembly |
US11236435B2 (en) * | 2018-11-21 | 2022-02-01 | Ebara Corporation | Method for holding substrate on substrate holder |
US11766765B2 (en) | 2018-11-30 | 2023-09-26 | Semes Co., Ltd. | Substrate treatment apparatus |
WO2020159708A1 (en) * | 2019-01-31 | 2020-08-06 | Lam Research Corporation | Showerhead with configurable gas outlets |
US20230062042A1 (en) * | 2021-08-24 | 2023-03-02 | Deviceeng Co. Ltd | Substrate support assembly for substrate treatment apparatus |
Also Published As
Publication number | Publication date |
---|---|
KR101681897B1 (en) | 2016-12-05 |
KR20120048672A (en) | 2012-05-15 |
WO2011017060A2 (en) | 2011-02-10 |
JP5902085B2 (en) | 2016-04-13 |
US11133210B2 (en) | 2021-09-28 |
JP2013502052A (en) | 2013-01-17 |
CN102498558A (en) | 2012-06-13 |
US20160093521A1 (en) | 2016-03-31 |
TW201110266A (en) | 2011-03-16 |
CN102498558B (en) | 2016-03-30 |
US10325799B2 (en) | 2019-06-18 |
TWI520259B (en) | 2016-02-01 |
WO2011017060A3 (en) | 2011-05-19 |
US20190304825A1 (en) | 2019-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11133210B2 (en) | Dual temperature heater | |
US7922440B2 (en) | Apparatus and method for centering a substrate in a process chamber | |
KR102537265B1 (en) | Wafer positioning pedestal for semiconductor processing | |
US10229845B2 (en) | Substrate treatment apparatus | |
TWI738901B (en) | Carrier plate for use in plasma processing systems | |
US7527694B2 (en) | Substrate gripping apparatus | |
KR20150119901A (en) | Apparatus and methods for injector to substrate gap control | |
WO2018061145A1 (en) | Substrate processing device, vibration detection system, and program | |
WO2016111747A1 (en) | Substrate transfer mechanisms | |
KR102584339B1 (en) | Pad raising mechanism in wafer positioning pedestal for semiconductor processing | |
TW202036652A (en) | Apparatus for processing substrate and lifting solution for substrate edge ring of the apparatus | |
US20120160419A1 (en) | Substrate-supporting unit and substrate-processing apparatus comprising same | |
TWI823158B (en) | Pre-loaded bowl mechanism for providing a symmetric radio frequency return path | |
KR20120103060A (en) | Chuck structure assembly and device for processing semiconductor substrate using the same | |
CN117730403A (en) | Method of isolating a chamber volume into a processing volume having internal wafer transfer capability |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DU BOIS, DALE R.;ROCHA-ALVAREZ, JUAN CARLOS;BALUJA, SANJEEV;AND OTHERS;SIGNING DATES FROM 20100719 TO 20100731;REEL/FRAME:024800/0912 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION |