US20110108866A1 - Led package and method for fabricating the same - Google Patents

Led package and method for fabricating the same Download PDF

Info

Publication number
US20110108866A1
US20110108866A1 US12/746,447 US74644708A US2011108866A1 US 20110108866 A1 US20110108866 A1 US 20110108866A1 US 74644708 A US74644708 A US 74644708A US 2011108866 A1 US2011108866 A1 US 2011108866A1
Authority
US
United States
Prior art keywords
encapsulation member
housing
led
led package
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/746,447
Inventor
Chung Hoon Lee
Yoon Hee Kim
Byung Yeol Park
Bang Hyun Kim
Eun Jung Seo
Hyouk Won Kwon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Assigned to SEOUL SEMICONDUCTOR CO., LTD. reassignment SEOUL SEMICONDUCTOR CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, BANG HYUN, LEE, CHUNG HOON, PARK, BYUNG YEOL, KIM, YOON HEE, KWON, HYOUK WON, SEO, EUN JUNG
Publication of US20110108866A1 publication Critical patent/US20110108866A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

An LED package is disclosed herein. The disclosed LED package comprises a base having an LED chip mounted thereon, an encapsulation member formed by a light-transmittable resin to encapsulate the LED chip, and a housing formed to expose a top portion of the encapsulation member and to encompass a side surface of the encapsulation member, wherein the encapsulation member is formed by a transfer molding process using a mold to have a predetermined shape. Further, the housing may be light-transmittable.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is the National Stage of International Application No. PCT/KR2008/007103, filed Dec. 2, 2008, and claims priority from and the benefit of Korean Patent Application No. 10-2007-0126436, filed on Dec. 6, 2007, which are both hereby incorporated by reference for all purposes as if fully set forth herein.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a light emitting diode (LED) package and a method of fabricating the same, and more particularly, to an improvement of an LED package, which includes a light-transmittable encapsulation member for encapsulating an LED chip and a housing configured to surround the encapsulation member.
  • 2. Discussion of the Background
  • An LED is a semiconductor light emitting device in which a current is supplied thereto and electrons and holes may be recombined in p-n semiconductor junctions to emit light. Conventionally, the LED is fabricated as a package structure including an LED chip, and the light emitting device configured as described above may be generally referred to as an “LED package.”
  • Generally, the LED package includes a base which is mounted with the LED chip and is provided with electric terminals, and a light-transmittable encapsulation member which is configured to protect the LED chip. A lead frame or a printed circuit board (PCB) has been prevailingly used as the base which is mounted with the LED chip. Depending on what is used as the base, the LED package may also be classified into a lead frame type LED package and a PCB type LED package. Further, an additional component such as a heat sink may also be used as the base which is mounted with the LED chip.
  • The lead frame type LED package includes a housing for defining a cavity in which the encapsulation member is formed. Such a housing generally serves to reflect light in order to narrow a viewing angle, i.e., in order to collect light, so that the housing has been referred to as a reflector. In the LED package as described above, the housing is formed of an opaque resin material by an ejection molding process and then a liquefied light-transmittable resin is injected into the cavity of the housing in a dotting manner to thereby form the encapsulation member.
  • It is conventionally difficult to design and fabricate the LED package with a viewing angle of light variably changed. This is because the design for the light viewing angle of the housing primarily depends on the shape for the reflection surface of the housing (in particular, the angle for the reflection surface). Further, since there is a large difference between the molding method of the housing and the molding method of the encapsulation member, it is difficult to consecutively fabricate the LED package and the fabrication process for the LED package is cumbersome and complicated.
  • According to the technique in which a liquefied resin is injected into the cavity of the ejection-molded housing in a dotting manner to form the encapsulation member, the encapsulation member is configured to have an undesired, upwardly convex shape due to the surface tension exerted on the liquefied resin. The shape of the encapsulation member deteriorates various performances of the LED package in the optical aspect. For example, if the LED package fabricated as described above is employed in a back light, the convex portion of the encapsulation member faces a light guide plate, thereby generating a hot spot phenomenon, i.e., a phenomenon in which there exists a point-shaped region excessively brighter than other regions. At this time, it is noted that such a convex shape of the encapsulation member as described above is different from that of the convex lens that is designed as required to control the viewing angle of light. On the other hand, if the amount of the liquefied resin injected into the cavity is reduced, there is generated an undesired, concave shape to thereby decrease the light emitting efficiency of the LED package.
    • SUMMARY OF THE INVENTION
  • Accordingly, an object of the present invention is to provide an LED package and a method for fabricating the same, in which an encapsulation member for encapsulating an LED chip within a housing is easily designed to have a shape as required.
  • Another object of the present invention is to provide an LED package and a method for fabricating the same, in which a housing is formed of a light-transmittable material which may control the transparency and the viewing angle, so that controlling the transparency of the housing may enlarge a design range for the viewing angle of light.
  • A further object of the present invention is to provide an LED package and a method for fabricating the same, in which a housing is formed by a method which is identical to or similar with a process for forming an encapsulation member, thereby being capable of fabricating the LED package in a consecutive and simple manner.
  • An LED package according to an aspect of the present invention comprises a base having an LED chip mounted thereon, an encapsulation member formed by a light-transmittable resin to encapsulate the LED chip, and a housing formed to expose a top portion of the encapsulation member and to encompass a side surface of the encapsulation member, wherein the encapsulation member is formed by a molding process using a mold to have a top surface of a desired shape. At this time, the top portion of the encapsulation member may be formed in the shape of a plane or lens. Here, it is preferable that the molding process using a mold be a transfer molding process.
  • Preferably, the housing may be formed by a transfer molding process before or after the encapsulation member is formed. Further, the housing is light-transmittable. More preferably, the housing may be a semitransparent housing, which includes a diffuser for adjusting the transparency of the housing and is used as a reflector.
  • An LED package according to another aspect of the present invention comprises a base having an LED chip mounted thereon, an encapsulation member formed by a light-transmittable resin to encapsulate the LED chip, and a housing formed to expose a top portion of the encapsulation member and to encompass a side surface of the encapsulation member, wherein the housing is light-transmittable. At this time, the housing and the encapsulation member are preferably formed by a transfer molding process.
  • A method for fabricating an LED package according to an aspect of the present invention comprises the steps of mounting an LED chip on a base, forming a housing for supporting the base, and forming an light-transmittable encapsulation member for encapsulating the LED chip, the housing encompassing a side surface of the encapsulation member, wherein the step of forming the encapsulation member comprises the step of molding the encapsulation member using a mold so that the encapsulation member has a predetermined, desired top surface. Preferably, the molding process is a transfer molding process.
  • A method for fabricating an LED package according to another aspect of the present invention comprises the steps of: mounting an LED chip on a base, forming a light-transmittable encapsulation member for encapsulating the LED chip and supporting the base, and forming a housing for encompassing a side surface of the encapsulation member, wherein the step of forming the encapsulation member comprises the step of molding the encapsulation member using a mold. Preferably, the molding process is a transfer molding process.
  • In the step of forming the housing, a mixing ratio of the diffuser is preferably adjusted to adjust a viewing angle.
  • Further, if the transfer molding is repeated twice or more in the step of forming the housing as described above, a structure in which a plurality of the housings are laminated with each other is made. The transfer molding is referred to as multiple transfer molding. Further, if the transfer molding is repeated twice or more in the step of forming the encapsulation member as described above, a structure in which a plurality of the encapsulation members are laminated with each other is made. The transfer molding is referred to as multiple transfer molding.
  • According to an embodiment of the present invention, a control range of a light viewing angle of an LED package is enlarged, and the LED package can be easily designed to have the desired light viewing angle. Further, it is possible to solve various problems which may be caused by a shape of an encapsulation member, such as a hot spot phenomenon, in which a contact portion between a light guide plate and the encapsulation member of the LED package is excessively bright when the LED package is used as a backlight, or the degradation of the light emitting efficiency caused by the concave shape of the encapsulation member. Further, according to an embodiment of the present invention, since the encapsulation member and the housing are formed by a transfer molding process, a molding equipment may be used as it is while a mold may be replaced with another to form both the encapsulation member and the housing, which is more economical than the prior art. Furthermore, unlike the prior art in which the encapsulation member is separately formed in a dotting manner, only one mold having a plurality of spaces for forming an encapsulation member is used, and the liquefied resin is filled in the spaces at a time and then is rapidly cured according to one embodiment of the present invention. Thus, a plurality of LED packages can be quickly fabricated, thereby largely enhancing the productivity of LED packages.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a perspective view illustrating an LED package according to an embodiment of the present invention.
  • FIG. 2 is a sectional view illustrating the LED package according to the embodiment of the present invention.
  • FIGS. 3 to 5 are photographs showing LED packages, in which the transparency of a light-transmittable housing is adjusted depending on the content of a diffuser included therein.
  • FIGS. 6 (a) and 6 (b) are sectional views illustrating LED packages according to other embodiments of the present invention.
  • FIG. 7 shows views illustrating a method of fabricating an LED package according to an embodiment of the present invention.
  • FIG. 8 shows views illustrating a transfer molding process for a housing and an encapsulation member in the method of fabricating an LED package as shown in FIG. 7.
  • FIG. 9 shows views illustrating a method of fabricating an LED package according to another embodiment of the present invention.
  • FIG. 10 is a view illustrating a transfer molding process for an encapsulation member according to a further embodiment of the present invention, wherein the transfer molding process is appropriate to form an encapsulation member of an LED package having a thin housing.
  • FIG. 11 is a view illustrating a transfer molding process for an encapsulation member according to a still further embodiment of the present invention.
  • FIG. 12 is a view illustrating an LED package according to a still further embodiment of the present invention.
    •  DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS
  • Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided only for illustrative purposes so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the following embodiments but may be implemented in other forms. In the drawings, the widths, lengths, thicknesses and the like of elements may be exaggerated for convenience of illustration. Like reference numerals indicate like elements throughout the specification and drawings.
  • FIG. 1 is a perspective view illustrating an LED package according to an embodiment of the present invention, and FIG. 2 is a sectional view illustrating the LED package according to the embodiment of the present invention.
  • Referring to FIGS. 1 and 2, an LED package 1 according to this embodiment includes a lead frame 10 having a first lead terminal 12 and a second lead terminal 14, wherein the lead frame 10 functions as a base on which a LED chip 2 is mounted. The lead frame 10 is formed by cutting a large patterned thin metal plate in order to provide the first lead terminal 12 and the second lead terminal 14 which are spaced apart from each other. At this time, a plurality of the lead frames 10 for a plurality of the LED packages may be obtained from the thin metal plate. Further, the cutting process of the lead frame 10 is performed after a housing 20 and an encapsulation member 30, which will be described later, are formed.
  • The LED chip 2 is die-attached onto a top surface of the first lead terminal 12 of the lead frame 10, and the LED chip 2 on the first lead terminal 12 is electrically connected to the second lead terminal 14 via a bonding wire.
  • Further, the LED package 1 of this embodiment includes the housing 20 and the encapsulation member 30. The encapsulation member 30 is formed of a light-transmittable material and encapsulates the LED chip 2 to protect the LED chip 2 and the like. The housing 20 may function as a reflector and is configured to encompass a side surface of the encapsulation member 30 and to expose a top portion of the encapsulation member 30. In this embodiment, the housing 20 serves to support the lead frame 10, i.e., the first lead terminal 12 and the second lead terminal 14.
  • As will be described in detail below, the encapsulation member 30 and the housing 20 are formed by a transfer molding process. In this embodiment, the housing 20 is formed of an epoxy molding compound (EMC) by the transfer molding process in order to support the lead frame 10 before the encapsulation member 30 is formed. At this time, a bottom surface of the housing 20 is substantially flush with that of the lead frame 10, so that the first and second lead terminals 12 and 14 of the lead frame 10 may be exposed to the outside in the neighborhood of the bottom surface of the housing 20 even without a bending process.
  • In order to function as the reflector, the housing 20 is formed of the EMC into which a white, milky and/or light gray diffuser 21 (as shown in FIG. 2) such as TiO2, SiO2, ZnO or Y2O3 is mixed. Therefore, the housing 20 comprises the diffuser 21, so that the transparency of the housing 20 and the viewing angle of the LED package 1 can be adjusted depending on the content of the diffuser 21 mixed into the transparent EMC.
  • FIGS. 3 to 5 are photographs of practical products of LED packages in which the transparency of the housing 20 varies depending on the content of the diffuser 21. The LED package shown in FIG. 3 includes a housing formed of a transparent EMC without TiO2 diffuser. The housing is substantially transparent, and the amount of light emitted through the housing is large so that the viewing angle is relatively broad. The LED package shown in FIG. 4 includes the housing formed of an EMC in which 0.3% of the TiO2 diffuser is mixed. The housing is semitransparent, and the amount of the light reflected from the inner surface of the housing toward the encapsulation member is such that the viewing angle of the LED package shown in FIG. 4 is narrower than that of the LED package shown in FIG. 3. The LED package shown in FIG. 5 includes a housing formed of an EMC in which 3% of the TiO2 diffuser is mixed. The transparency of the housing is therefore smaller, and the LED package may emit the light with a narrow light viewing angle of about 120 degrees which is appropriate for a backlight unit.
  • Referring back to FIGS. 1 and 2, the housing 20 is shaped to encompass the side surface of the encapsulation member 30 on the whole and to allow the top portion of the encapsulation member 30 to be exposed. Since the housing 20 for supporting the lead frame 10 is formed prior to the encapsulation member 30 in this embodiment, the housing 20 is configured to include a cavity for defining the position of the encapsulation member 30 which will be subsequently formed. In this embodiment, the encapsulation member 30, into which a light-transmittable resin such as epoxy or silicone is molded, is formed by a molding process using a mold, particularly, by a transfer molding process in order to obtain a desired shape.
  • It is preferable that the encapsulation member 30 is formed by a molding process using a mold, particularly, by a transfer molding process, wherein the molding process using a mold allows the shape of a top surface 31, through which the light is primarily emitted, to be formed as desired. For example, the transfer molding makes it possible to form the encapsulation member 30 having a planar top surface 31. When a liquefied resin is injected into the cavity of the housing 20 to form the encapsulation member 30, the surface tension makes it impossible to obtain the planar shape as desired above. However, it is noted that the present invention does not completely exclude the injection of the liquefied resin into the cavity in a dotting manner.
  • A phosphor which is excited by light having a specific wavelength to emit light having a different wavelength may be contained in the encapsulation member 30.
  • The shape of the encapsulation member 30 is not limited to the planar shape, but various encapsulation members 30 having hemispherically convex or concave lens shapes or various lens shapes having Fresnel patterns may be formed by a molding process using a mold, such as a transfer molding process. Fresnel pattern contributes to enlarging the viewing angle of its corresponding lens.
  • FIG. 6 (a) shows the configuration of the LED package 1 according to another embodiment of the present invention, wherein a lens type encapsulation member 30 having a hemispheric top surface, is formed by a transfer molding process.
  • Meanwhile, instead of the lead frame 10 as described in the previous embodiment, another base on which the LED chip 2 is mounted may be used. For example, in the LED package 1 shown in FIG. 6 (b), a printed circuit board (PCB) 100 is used as the base on which the LED chip 2 is mounted. Referring to FIG. 6 (b), the LED chip 2 is mounted on the top central region of the PCB 100. Further, the top surface of the PCB 100 is provided with first and second electrode patterns 102 and 103 which are electrically connected to the LED chip 2 by bonding wires, wherein the first and second electrode patterns 102 and 103 may be formed by an electroplating process. In this embodiment, both the encapsulation member 30 and the housing 20 are formed by a transfer molding process.
  • Although it has been described above that the housing 20 is first transfer-molded and the encapsulation member 30 is then transfer-molded as described above, it may be considered that the encapsulation member 30 is first transfer-molded and the housing 20 is then transfer-molded. It is easy to separately transfer-mold the housing 20 and the encapsulation member 30 regardless of their sequential order particularly when the housing 20 and the encapsulation member 30 are formed of thermosetting plastic such as epoxy or silicone. This is because a portion to be formed first is not influenced by the melting temperature of the other portion to be formed later. Further, it may be considered that a housing 20 having a cavity is formed by a transfer molding process and then a liquefied resin is injected into the cavity in a dotting manner to form the encapsulation member 30.
  • If the transfer molding process is used, it is possible to make an integrated housing 20 in which a plurality of partial housings are laminated by repeating the transfer molding twice or more in order to form the integrated housing 20. Further, if the transfer molding process is used, it is possible to make an integrated encapsulation member 30 in which a plurality of partial encapsulation members are laminated by repeating the transfer molding twice or more. The transfer molding process repeated twice or more as described above is referred to as multiple transfer molding.
  • Now, various embodiments of a method for fabricating the LED package as described above will be described.
  • FIG. 7 shows plan views illustrating a method for fabricating an LED package according to an embodiment of the present invention on a process-by-process basis.
  • First, as shown in FIG. 7 (a), the lead frame 10 which includes the first and second lead terminals 12 and 14 is prepared. At this time, although the LED chip is mounted on the lead frame 10 and the bonding wire is connected to the lead frame 10, the LED chip and the bonding wire will be omitted from the drawings for the convenience of illustration. Further, although the lead frame 10 is no more than a portion of a patterned thin metal plate including a plurality of lead frames which have not been cut yet in the practical method for fabricating the LED package, only one lead frame 10 which has been previously cut is shown for the convenience of illustration and description.
  • Then, as shown in FIG. 7 (b), the housing 20 is formed on the lead frame 10 by a transfer molding process. The housing 20 causes the first and second lead terminals 12 and 14 to be exposed upwards through the cavity of the housing 20 itself. In addition, the housing 20 formed on the lead frame 10 supports the lead frame 10. At this time, it is preferable that a molding material used for the transfer molding of the housing 20 is a tablet-type solid EMC which is made by adding a diffuser to a transparent powder-type EMC. However, a light-transmittable resin such as silicone may be used without using epoxy as the primary component.
  • Then, as shown in FIG. 7 (c), the encapsulation member 30 of epoxy or silicone for encapsulating the LED chip (not shown in FIG. 7) is formed inside of the cavity of the housing 20 by a transfer molding process. In the transfer molding of the encapsulation member 30, a solid EMC (in particular, a tablet-type solid EMC) is used. Another molding process using a mold may be considered, and for example, the encapsulation member 30 may be formed of a liquefied epoxy or silicone by an injection molding process. Further, the shape of the encapsulation member 30 molded by means of a mold is previously defined by the previously designed mold, and the shape of the encapsulation member 30 is preferably shaped as a plane or lens. At this time, since the encapsulation member 30 is formed in the cavity of the housing 20, the housing 20 is shaped to surround the side surface of the encapsulation member 30 on the whole.
  • FIG. 8 (a) is a view illustrating a transfer molding process for the housing 20, and FIG. 8 (b) is a view illustrating a transfer molding process of the encapsulation member 30.
  • Referring to FIG. 8 (a), a resin under the high temperature and pressure is injected into a mold M1 for forming the housing, which includes an injection hole I, so that the mold M1 is filled with the resin, and then, the housing 20 is formed by curing the filled resin. At this time, a gate G (see FIG. 8 (b)) to be used for the transfer molding of the encapsulation member 30 which will be performed later has been previously formed. Further, instead of the gate G, a groove which has been previously formed on an upper end of the cavity of the housing 20 may be used as a resin injection gate.
  • Referring to FIG. 8 (b), the resin is injected into a space defined by the cavity of the housing 20 and the mold M2 through an injection hole I of a mold M2 for forming the encapsulation member and the gate G which has been previously formed in the housing 20. At this time, the shape of the top surface of the encapsulation member is defined, for example, in the shape of a plane or lens by means of the mold M2.
  • Although the processes shown in FIGS. 7 and 8 are accomplished for the lead frame 10, they may be accomplished for another kind of base such as a PCB instead of the lead frame 10. Except when another kind of base is used instead of the lead frame 10, the processes shown in FIGS. 7 and 8 may be applied as they are without further modification.
  • FIG. 9 shows plan views illustrating a method for fabricating an LED package according to another embodiment of the present invention on a process-by-process basis.
  • First, the lead frame 10 which comprises the first and second lead terminals 12 and 14 is prepared as shown in FIG. 9 (a). At this time, although the LED chip is mounted on the lead frame 10 and the bonding wire is connected to the lead frame 10, the LED chip and the bonding wire will be omitted from the drawings for the convenience of illustration. Further, although the lead frame 10 is no more than a portion of a patterned thin metal plate including a plurality of lead frames which have not been cut yet in the practical method for fabricating the LED package, only one lead frame 10 which has been previously cut is shown for the convenience of illustration and description.
  • Then, as shown in FIG. 9 (b), the encapsulation member 30 for encapsulating the LED chip (not shown in FIG. 9) is formed prior to the formation of the housing 20. The encapsulation member 30 is formed to support the lead frame 10 which comprises the first and second lead terminals 12 and 14. The encapsulation member 30 is formed in the shape predetermined by the mold for transfer molding. A solid EMC (in particular, a tablet-type solid EMC) may be used in the transfer molding process of the encapsulation member 30, wherein the solid EMC may include a phosphor. Alternatively, instead of the transfer molding, injection molding may be used to form the encapsulation member 30, wherein a liquefied epoxy resin or a liquefied silicone resin is directly injected into the mold in the injection molding process. The liquefied epoxy resin or the liquefied silicone resin may include a phosphor.
  • Then, as shown in FIG. 9 (c), the housing 20 is formed for surrounding the side surface of the encapsulation member 30. At this time, the transfer molding may also be used. Either a tablet-type solid EMC which is made by adding a diffuser to a transparent powder type EMC or a liquefied epoxy or silicone may be used as the molding material used for the transfer molding of the housing 20.
  • FIG. 10 is a view illustrating a transfer molding process in which a resin is directly injected into a cavity of the turned-over housing 20 according to a further embodiment of the present invention. A mold M3 causes the cavity of the housing 20 to be closed. Further, the mold M3 has an injection hole I directly connected to the cavity of the housing 20. The transfer molding process may be preferably used to form the encapsulation member, for example, in a side view type LED package in which the thickness of the housing 20 is relatively thin so that the housing 20 may be easily broken.
  • FIG. 11 is a view illustrating a transfer molding process for an encapsulation member according to a still further embodiment of the present invention. Referring to FIG. 11, a cavity 201 in which an LED chip is received is formed in the housing 20, and the cavity 201 is closed by a plate-shaped mold M4 which is positioned on the top side of the cavity. In addition, a groove 202 is formed at an edge of the cavity 201 (and more particularly, adjacent to a vertex of the cavity). The groove 202 conforms to an injection hole I which is formed in the mold M4 with the cavity 201 closed by the mold M4, so that an injection passage for a resin into the cavity 201 may be compartmentally formed.
  • If the resin is injected through the injection hole I and the groove 202 and then the injected resin is cured, the encapsulation member 30 is formed in the cavity 201. The upper shape of the encapsulation member 30 is defined by the mold M4. For example, if the mold M4 having a planar surface for closing the cavity 201 is used, the encapsulation member 30 whose top surface is plane is formed. Depending on the surface shape of the mold M4 for closing the encapsulation member 30, lenses having various shapes, i.e., a spherical lens, a Fresnel lens or other shaped lens, may be formed. Patterns, roughness and/or unevenness on a surface of the lens may be regular or irregular.
  • Although not drawn, upper and lower molds for receiving and supporting a housing or an LED package including the housing 20 and a mold M4 used for the molding may be used to molding the encapsulation member while the upper and lower molds and the mold M4 are assembled as a set.
  • FIG. 12 is a plan view illustrating an LED package 1 according to a still further embodiment of the present invention. Referring to FIG. 12, a plurality of recesses 102 for receiving the LED chip 2 are formed on the base 10, which may comprise a lead frame, a PCB or other substrates. In addition, another plurality of recesses 103 for receiving bonding pads (or wire balls) for the bonding wires are further formed on the base 10. The recesses 102 and prevent the LED packages 1 from not being slimmed (or compacted) by increasing the thickness of the LED chip 2 or the bonding pads (or wire balls). In particular, the recess 102, in which the LED chip 2 is received, may be filled with a resin (preferably, a silicone resin) including an anti-deterioration material and/or a phosphor. In addition, the recesses 102 and 103 may contribute to increasing the adhesion between the encapsulation member 30 and the lead frame 10. In order to increase the adhesion, it may be considered that a plurality of recesses, which are in contact with the encapsulation member 30 to increase the adhesion, may be formed on the base 10 regardless of the position of the LED chip 1 and the bonding pads.
  • The present invention is not limited to the aforementioned embodiments but may be applied to all kinds of LED packages having an encapsulation member and a housing, for example, a side view type LED package, a PCB type or chip LED package, a lamp type LED package or a high-flux type LED package as well as a top type LED package.

Claims (20)

1. An LED A light emitting diode (LED) package, comprising:
a base;
an LED chip disposed on the base;
an encapsulation member comprising a light-transmittable resin encapsulating the LED chip, the encapsulation member comprising a molded top surface; and
a housing exposing a top portion of the encapsulation member and encompassing a side surface of the encapsulation member.
2. The LED package of claim 1, wherein the housing is transfer molded.
3. The LED package as claimed in of claim 2, wherein the housing is light-transmittable.
4. The LED package of claim 3, wherein the housing is a semitransparent housing comprising a diffuser adjusting a viewing angle of the LED package, wherein the diffuser is used as a reflector.
5. The LED package of claim 1, wherein the top surface of the encapsulation member comprises a planar or lens shape.
6. The LED package of claim 1, wherein the encapsulation member is transfer molded.
7. A light emitting diode (LED) package, comprising:
a base;
an LED chip disposed on the base;
an encapsulation member comprising a light-transmittable resin encapsulating the LED chip; and
a housing exposing a top portion of the encapsulation member and encompassing a side surface of the encapsulation member, wherein the housing is light-transmittable.
8. The LED package of claim 7, wherein the housing comprises a semitransparent housing that includes a diffuser adjusting a viewing angle of the LED package, wherein the diffuser is used as a reflector.
9. The LED package of claim 7, wherein the housing and the encapsulation member are transfer molded.
10. The LED package of claim 1, wherein an upper surface of the base comprises at least one recess to receive the LED chip or a bonding pad.
11. A method for fabricating a light emitting diode (LED) package, comprising:
mounting an LED chip on a base;
forming a housing supporting the base; and
forming a light-transmittable encapsulation member encapsulating the LED chip, the housing encompassing a side surface of the encapsulation member,
wherein forming the encapsulation member comprises molding the encapsulation member using a mold to form a molded to surface on the encapsulation member.
12. A method for fabricating a light emitting diode (LED) package, comprising:
mounting an LED chip on a base;
forming a light-transmittable encapsulation member encapsulating the LED chip and supporting the base; and
forming a housing encompassing a side surface of the encapsulation member,
wherein forming the encapsulation member comprises molding the encapsulation member using a mold to form a molded to surface on the encapsulation member.
13. The method of claim 11, wherein forming the housing comprises a transfer molding process.
14. The method of claim 13, wherein forming the housing comprises using a molding material comprising a diffuser and a transparent resin.
15. The method of claim 14, wherein the molding material is formed by mixing the diffuser and the transparent resin, and a mixing ratio of the diffuser is adjusted to change a viewing angle of the LED package.
16. The method of claim 14, wherein the diffuser is at least one selected from the group consisting of TiO2, SiO2, ZnO, and Y2O3.
17. The method of claim 11, wherein forming the encapsulation member comprises a transfer molding process.
18. The method of claim 11, wherein forming the encapsulation member or the housing comprises a multiple transfer molding process.
19. A light emitting diode (LED) package, comprising:
a base;
an LED chip disposed on the base;
an encapsulation member comprising a light-transmittable resin encapsulating the LED chip; and
a housing exposing a top portion of the encapsulation member and encompassing a side surface of the encapsulation member,
wherein the housing is transfer molded.
20. The LED package of claim 19, wherein the encapsulation member comprises a liquefied light-transmittable resin that is injected into a cavity formed in the housing.
US12/746,447 2007-12-06 2008-12-02 Led package and method for fabricating the same Abandoned US20110108866A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20070126436A KR101488448B1 (en) 2007-12-06 2007-12-06 Led package and method for fabricating the same
KR10-2007-0126436 2007-12-06
PCT/KR2008/007103 WO2009072786A2 (en) 2007-12-06 2008-12-02 Led package and method for fabricating the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/007103 A-371-Of-International WO2009072786A2 (en) 2007-12-06 2008-12-02 Led package and method for fabricating the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/142,071 Continuation US9698319B2 (en) 2007-12-06 2013-12-27 LED package with lead terminals having protrusions of differing widths and method for fabricating the same

Publications (1)

Publication Number Publication Date
US20110108866A1 true US20110108866A1 (en) 2011-05-12

Family

ID=40718337

Family Applications (3)

Application Number Title Priority Date Filing Date
US12/746,447 Abandoned US20110108866A1 (en) 2007-12-06 2008-12-02 Led package and method for fabricating the same
US14/142,071 Active US9698319B2 (en) 2007-12-06 2013-12-27 LED package with lead terminals having protrusions of differing widths and method for fabricating the same
US14/318,125 Abandoned US20140306257A1 (en) 2007-12-06 2014-06-27 Led package and method for fabricating the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
US14/142,071 Active US9698319B2 (en) 2007-12-06 2013-12-27 LED package with lead terminals having protrusions of differing widths and method for fabricating the same
US14/318,125 Abandoned US20140306257A1 (en) 2007-12-06 2014-06-27 Led package and method for fabricating the same

Country Status (6)

Country Link
US (3) US20110108866A1 (en)
EP (1) EP2215667B1 (en)
JP (1) JP2011507228A (en)
KR (1) KR101488448B1 (en)
TW (1) TWI497746B (en)
WO (1) WO2009072786A2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120181574A1 (en) * 2009-10-01 2012-07-19 Nichia Corporation Light emitting device
US20120305962A1 (en) * 2011-05-30 2012-12-06 Won Sunghee Light emitting device package and lighting system
US20130193436A1 (en) * 2006-05-18 2013-08-01 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US8564012B2 (en) * 2012-02-10 2013-10-22 Intersil Americas LLC Optoelectronic apparatuses and methods for manufacturing optoelectronic apparatuses
US20130299859A1 (en) * 2012-05-14 2013-11-14 Shin-Etsu Chemical Co., Ltd. Substrate for optical semiconductor apparatus, method for manufacturing the same, optical semiconductor apparatus and method for manufacturing the same
US20140092586A1 (en) * 2012-09-28 2014-04-03 Greggory Tate Homrighous Solar Powered Signs Including Solar Panels and Light-Emitting Diodes
USD731987S1 (en) * 2012-12-28 2015-06-16 Nichia Corporation Light emitting diode
US20160315240A1 (en) * 2013-12-06 2016-10-27 Koninklijke Philips N.V. Mounting assembly and lighting device
US20170222104A1 (en) * 2013-03-25 2017-08-03 Nichia Corporation Method for manufacturing light emitting device, and light emitting device
US20190393139A1 (en) * 2008-03-11 2019-12-26 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
TWI696283B (en) * 2017-06-27 2020-06-11 億光電子工業股份有限公司 Structure of package leadframe and lighting device comprising the same
CN114089565A (en) * 2021-12-06 2022-02-25 武汉创维光显电子有限公司 Light emitting assembly and backlight module

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8217482B2 (en) 2007-12-21 2012-07-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared proximity sensor package with reduced crosstalk
TWI460889B (en) * 2009-10-23 2014-11-11 Everlight Electronics Co Ltd Light emitting diode package structure
JP2010153861A (en) 2008-12-15 2010-07-08 Yiguang Electronic Ind Co Ltd Light emitting diode package structure
US8420999B2 (en) 2009-05-08 2013-04-16 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Metal shield and housing for optical proximity sensor with increased resistance to mechanical deformation
US8552453B2 (en) * 2009-06-22 2013-10-08 Nichia Corporation Light emitting device
US8779361B2 (en) 2009-06-30 2014-07-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components
US9525093B2 (en) 2009-06-30 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared attenuating or blocking layer in optical proximity sensor
US8957380B2 (en) 2009-06-30 2015-02-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared attenuating or blocking layer in optical proximity sensor
US8143608B2 (en) 2009-09-10 2012-03-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Package-on-package (POP) optical proximity sensor
US8350216B2 (en) 2009-09-10 2013-01-08 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Miniaturized optical proximity sensor
US8097852B2 (en) 2009-09-10 2012-01-17 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Multiple transfer molded optical proximity sensor and corresponding method
US8716665B2 (en) 2009-09-10 2014-05-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Compact optical proximity sensor with ball grid array and windowed substrate
US20110062470A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Reduced angular emission cone illumination leds
JP5471244B2 (en) * 2009-09-29 2014-04-16 豊田合成株式会社 Lighting device
US9733357B2 (en) 2009-11-23 2017-08-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Infrared proximity sensor package with improved crosstalk isolation
CN102456824A (en) * 2010-10-21 2012-05-16 展晶科技(深圳)有限公司 Packaging structure of light emitting diode
MY170920A (en) 2010-11-02 2019-09-17 Carsem M Sdn Bhd Leadframe package with recessed cavity for led
US8841597B2 (en) 2010-12-27 2014-09-23 Avago Technologies Ip (Singapore) Pte. Ltd. Housing for optical proximity sensor
JP5749555B2 (en) * 2011-04-26 2015-07-15 株式会社エンプラス Luminous flux control member, light emitting device including the luminous flux control member, and surface light source device including the light emitting device
JP5834467B2 (en) * 2011-04-27 2015-12-24 日亜化学工業株式会社 Light emitting device
CN103000783A (en) * 2011-09-19 2013-03-27 展晶科技(深圳)有限公司 Light emitting diode and manufacturing method thereof
DE102011084885A1 (en) * 2011-10-20 2013-04-25 Osram Gmbh Support for a lighting device
MY156107A (en) 2011-11-01 2016-01-15 Carsem M Sdn Bhd Large panel leadframe
KR102199982B1 (en) * 2014-01-20 2021-01-08 엘지이노텍 주식회사 Lighting source module and light system having the same
KR101969985B1 (en) * 2015-01-16 2019-04-17 이우필 Reflector, and manufacturing method for same
JP6985286B2 (en) * 2016-03-22 2021-12-22 スージョウ レキン セミコンダクター カンパニー リミテッド Light emitting element and light emitting module equipped with this
JP1563810S (en) * 2016-03-24 2016-11-21
KR20180081647A (en) * 2017-01-06 2018-07-17 삼성전자주식회사 Light emitting package
US11444227B2 (en) 2019-10-01 2022-09-13 Dominant Opto Technologies Sdn Bhd Light emitting diode package with substrate configuration having enhanced structural integrity
CN113363367A (en) 2020-03-06 2021-09-07 隆达电子股份有限公司 Light emitting diode structure
US11444225B2 (en) 2020-09-08 2022-09-13 Dominant Opto Technologies Sdn Bhd Light emitting diode package having a protective coating
US11329206B2 (en) 2020-09-28 2022-05-10 Dominant Opto Technologies Sdn Bhd Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same
TWI765569B (en) * 2021-02-08 2022-05-21 健策精密工業股份有限公司 Lead frame structure and manufacturing method thereof

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5990497A (en) * 1996-08-31 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor light emitting element, semiconductor light emitting device using same element
US6355946B1 (en) * 1998-12-16 2002-03-12 Rohm Co., Ltd. Semiconductor device with reflector
US20030107316A1 (en) * 2001-12-07 2003-06-12 Gen Murakami Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit
US20050093005A1 (en) * 2002-06-28 2005-05-05 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing it
US20050236639A1 (en) * 2004-04-27 2005-10-27 Sharp Kabushiki Kaisha Semiconductor light emitting device and fabrication method thereof
US20050245018A1 (en) * 2001-10-31 2005-11-03 Georg Bogner Optoelectronic component
US20050280017A1 (en) * 2004-06-11 2005-12-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device and semiconductor light emitting unit
US20060043407A1 (en) * 2004-08-26 2006-03-02 Kabushiki Kaisha Toshiba Semiconductor light emitting apparatus
US20060261360A1 (en) * 2005-04-27 2006-11-23 Kyocera Corporation Base structure for light emitting device and light emitting device using the same
US20060261366A1 (en) * 2005-05-19 2006-11-23 Pi-Fu Yang Integrated light-emitting device
US20070034886A1 (en) * 2005-08-11 2007-02-15 Wong Boon S PLCC package with integrated lens and method for making the package
US20070075451A1 (en) * 2005-09-30 2007-04-05 Matthias Winter Process for producing a radiation-emitting component
US20070170454A1 (en) * 2006-01-20 2007-07-26 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
US20070215896A1 (en) * 2006-03-17 2007-09-20 Edison Opto Corporation Light emitting diode package structure and method of manufacturing the same
US20080268559A1 (en) * 2005-07-13 2008-10-30 Seoul Semiconductor Co., Ltd. Mold for Forming a Molding Member and Method of Fabricating a Molding Member Using the Same
US7932525B2 (en) * 2007-05-29 2011-04-26 Iwatani Corporation Semiconductor light-emitting device

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980025874A (en) * 1996-10-05 1998-07-15 김광호 Semiconductor chip package for CCD
JP3356068B2 (en) * 1998-07-27 2002-12-09 松下電器産業株式会社 Method for manufacturing photoelectric conversion element
JP2001168400A (en) * 1999-12-09 2001-06-22 Rohm Co Ltd Chip type light emitting device with case and its manufacturing method
US20030075724A1 (en) * 2001-10-19 2003-04-24 Bily Wang Wing-shaped surface mount package for light emitting diodes
JP3474841B2 (en) * 2000-09-14 2003-12-08 スタンレー電気株式会社 Manufacturing method of surface mount components
DE10065381B4 (en) * 2000-12-27 2010-08-26 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with luminescence conversion element
JP2004158557A (en) * 2002-11-05 2004-06-03 Shurai Kagi Kofun Yugenkoshi Similar flip chip type light emitting diode device package
JP3910171B2 (en) * 2003-02-18 2007-04-25 シャープ株式会社 Semiconductor light emitting device, method for manufacturing the same, and electronic imaging device
US6841934B2 (en) * 2003-02-26 2005-01-11 Harvatek Corporation White light source from light emitting diode
JP4174823B2 (en) 2003-03-27 2008-11-05 サンケン電気株式会社 Semiconductor light emitting device
US7276782B2 (en) * 2003-10-31 2007-10-02 Harvatek Corporation Package structure for semiconductor
KR100540848B1 (en) * 2004-01-02 2006-01-11 주식회사 메디아나전자 White LED device comprising dual-mold and manufacturing method for the same
JP2005259972A (en) * 2004-03-11 2005-09-22 Stanley Electric Co Ltd Surface-mounting led
JP4608294B2 (en) 2004-11-30 2011-01-12 日亜化学工業株式会社 RESIN MOLDED BODY, SURFACE MOUNTED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THEM
JP4979896B2 (en) * 2005-04-25 2012-07-18 パナソニック株式会社 Light emitting device
KR20070000638A (en) * 2005-06-28 2007-01-03 삼성전기주식회사 High brightness light emitting diode and method of manufacturing the same
JP4965858B2 (en) 2005-12-26 2012-07-04 株式会社東芝 LED device with lens
USD563333S1 (en) * 2006-04-05 2008-03-04 Seoul Semiconductor Co., Ltd. Light emitting diode (LED)
KR100735325B1 (en) * 2006-04-17 2007-07-04 삼성전기주식회사 Light emitting diode package and fabrication method thereof
JP5119621B2 (en) * 2006-04-21 2013-01-16 日亜化学工業株式会社 Light emitting device
JP2007305785A (en) * 2006-05-11 2007-11-22 Nichia Chem Ind Ltd Light emitting device
TWI338380B (en) * 2006-10-11 2011-03-01 Chuan Yu Hung Light emitting diode incorporating high refractive index material

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5990497A (en) * 1996-08-31 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor light emitting element, semiconductor light emitting device using same element
US6355946B1 (en) * 1998-12-16 2002-03-12 Rohm Co., Ltd. Semiconductor device with reflector
US20050245018A1 (en) * 2001-10-31 2005-11-03 Georg Bogner Optoelectronic component
US20030107316A1 (en) * 2001-12-07 2003-06-12 Gen Murakami Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit
US20050093005A1 (en) * 2002-06-28 2005-05-05 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing it
US20050236639A1 (en) * 2004-04-27 2005-10-27 Sharp Kabushiki Kaisha Semiconductor light emitting device and fabrication method thereof
US20050280017A1 (en) * 2004-06-11 2005-12-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device and semiconductor light emitting unit
US20060043407A1 (en) * 2004-08-26 2006-03-02 Kabushiki Kaisha Toshiba Semiconductor light emitting apparatus
US20060261360A1 (en) * 2005-04-27 2006-11-23 Kyocera Corporation Base structure for light emitting device and light emitting device using the same
US20060261366A1 (en) * 2005-05-19 2006-11-23 Pi-Fu Yang Integrated light-emitting device
US20080268559A1 (en) * 2005-07-13 2008-10-30 Seoul Semiconductor Co., Ltd. Mold for Forming a Molding Member and Method of Fabricating a Molding Member Using the Same
US20070034886A1 (en) * 2005-08-11 2007-02-15 Wong Boon S PLCC package with integrated lens and method for making the package
US20070075451A1 (en) * 2005-09-30 2007-04-05 Matthias Winter Process for producing a radiation-emitting component
US20070170454A1 (en) * 2006-01-20 2007-07-26 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
US20070215896A1 (en) * 2006-03-17 2007-09-20 Edison Opto Corporation Light emitting diode package structure and method of manufacturing the same
US7932525B2 (en) * 2007-05-29 2011-04-26 Iwatani Corporation Semiconductor light-emitting device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9634204B2 (en) * 2006-05-18 2017-04-25 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US10686102B2 (en) 2006-05-18 2020-06-16 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US10971656B2 (en) 2006-05-18 2021-04-06 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US10263161B2 (en) 2006-05-18 2019-04-16 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US20130193436A1 (en) * 2006-05-18 2013-08-01 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US11631790B2 (en) 2006-05-18 2023-04-18 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US9929318B2 (en) 2006-05-18 2018-03-27 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US11777068B2 (en) 2008-03-11 2023-10-03 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
US10861778B2 (en) * 2008-03-11 2020-12-08 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
US11444008B2 (en) 2008-03-11 2022-09-13 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
US20190393139A1 (en) * 2008-03-11 2019-12-26 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
US20120181574A1 (en) * 2009-10-01 2012-07-19 Nichia Corporation Light emitting device
US8487328B2 (en) * 2009-10-01 2013-07-16 Nichia Corporation Light emitting device
US8492786B2 (en) * 2011-05-30 2013-07-23 Lg Innotek Co., Ltd. Light emitting device package and lighting system
US20120305962A1 (en) * 2011-05-30 2012-12-06 Won Sunghee Light emitting device package and lighting system
US8564012B2 (en) * 2012-02-10 2013-10-22 Intersil Americas LLC Optoelectronic apparatuses and methods for manufacturing optoelectronic apparatuses
US20130299859A1 (en) * 2012-05-14 2013-11-14 Shin-Etsu Chemical Co., Ltd. Substrate for optical semiconductor apparatus, method for manufacturing the same, optical semiconductor apparatus and method for manufacturing the same
US9435502B2 (en) * 2012-09-28 2016-09-06 Greggory Tate Homrighous and Frank Bryan Homrighous Solar powered signs including solar panels and light-emitting diodes
US20140092586A1 (en) * 2012-09-28 2014-04-03 Greggory Tate Homrighous Solar Powered Signs Including Solar Panels and Light-Emitting Diodes
USD731987S1 (en) * 2012-12-28 2015-06-16 Nichia Corporation Light emitting diode
US20170222104A1 (en) * 2013-03-25 2017-08-03 Nichia Corporation Method for manufacturing light emitting device, and light emitting device
US10461227B2 (en) * 2013-03-25 2019-10-29 Nichia Corporation Method for manufacturing light emitting device, and light emitting device
US10236429B2 (en) * 2013-12-06 2019-03-19 Lumileds Llc Mounting assembly and lighting device
US20160315240A1 (en) * 2013-12-06 2016-10-27 Koninklijke Philips N.V. Mounting assembly and lighting device
US10784412B2 (en) * 2017-06-27 2020-09-22 Everlight Electronics Co., Ltd. Package support structure and light emitting device including same
TWI696283B (en) * 2017-06-27 2020-06-11 億光電子工業股份有限公司 Structure of package leadframe and lighting device comprising the same
CN114089565A (en) * 2021-12-06 2022-02-25 武汉创维光显电子有限公司 Light emitting assembly and backlight module

Also Published As

Publication number Publication date
US20140306257A1 (en) 2014-10-16
US9698319B2 (en) 2017-07-04
WO2009072786A3 (en) 2009-09-03
TWI497746B (en) 2015-08-21
TW200931691A (en) 2009-07-16
JP2011507228A (en) 2011-03-03
EP2215667A4 (en) 2012-04-04
KR20090059538A (en) 2009-06-11
KR101488448B1 (en) 2015-02-02
WO2009072786A2 (en) 2009-06-11
US20140110739A1 (en) 2014-04-24
EP2215667A2 (en) 2010-08-11
EP2215667B1 (en) 2019-02-27

Similar Documents

Publication Publication Date Title
US9698319B2 (en) LED package with lead terminals having protrusions of differing widths and method for fabricating the same
US8525213B2 (en) Light emitting device having multiple cavities and light unit having the same
US7714342B2 (en) Chip coated light emitting diode package and manufacturing method thereof
KR100674871B1 (en) Side Emitting LED Package and Method of Manufacturing The Same
KR100691179B1 (en) Side Emitting LED Package and Method of Manufacturing The Same
TWI393841B (en) Wide emitting lens for led useful for backlighting
US8283693B2 (en) Light emitting device with a lens of silicone
TWI463708B (en) Side-emitting type semiconductor light emitting device package and manufacturing process thereof
TWI382561B (en) Power light emitting die package with reflecting lens and the method of making the same
US7111964B2 (en) LED package
US9698312B2 (en) Resin package and light emitting device
JP3447604B2 (en) Surface mount type light emitting diode and method of manufacturing the same
US20090004778A1 (en) Manufacturing Method of Light Emitting Diode
JP2004363533A (en) Method for manufacturing light emitting diode device
KR20120084554A (en) Light emitting device package and method of manufacturing the light emitting device package
KR20090073598A (en) Led package
KR100757825B1 (en) Manufacturing method of light emitting diode
KR101752405B1 (en) Lens and led package comprising the same
KR101549383B1 (en) Led package and method for fabricating the same
KR101423455B1 (en) Led package and method for fabricating the same
JP3474841B2 (en) Manufacturing method of surface mount components

Legal Events

Date Code Title Description
AS Assignment

Owner name: SEOUL SEMICONDUCTOR CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LEE, CHUNG HOON;KIM, YOON HEE;PARK, BYUNG YEOL;AND OTHERS;SIGNING DATES FROM 20100525 TO 20100526;REEL/FRAME:024562/0729

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION