US20120038894A1 - Lens Cleaning Module - Google Patents
Lens Cleaning Module Download PDFInfo
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- US20120038894A1 US20120038894A1 US13/282,745 US201113282745A US2012038894A1 US 20120038894 A1 US20120038894 A1 US 20120038894A1 US 201113282745 A US201113282745 A US 201113282745A US 2012038894 A1 US2012038894 A1 US 2012038894A1
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- cleaning
- fluid
- lens
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- objective lens
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- 238000000671 immersion lithography Methods 0.000 claims description 25
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
A lens cleaning module for a lithography system having an exposure apparatus including an objective lens is disclosed. The lens cleaning module includes a scanning stage for supporting a wafer beneath the objective lens. A cleaning module is provided adjacent to the scanning stage for cleaning the objective lens in a non-manual cleaning process.
Description
- This is a continuation-in-part of application Ser. No. 10/910,480, filed Aug. 3, 2004.
- The present invention relates to photolithography processes used in the formation of integrated circuit (IC) patterns on photoresist in the fabrication of semiconductor integrated circuits. More particularly, the present invention relates td a lens cleaning module which cleans an objective lens of a lithography system exposure apparatus to enhance the integrity of circuit pattern images transferred from a mask to a wafer.
- Various processing steps are used to fabricate integrated circuits on a semiconductor wafer. These steps include deposition of a conducting layer on the silicon wafer substrate; formation of a photoresist or other mask such as titanium oxide or silicon oxide, in the form of the desired metal interconnection pattern, using standard lithographic or photolithographic techniques; subjecting the wafer substrate to a dry etching process to remove the conducting layer from the areas not covered by the mask, thereby etching the conducting layer in the form of the masked pattern on the substrate; removing or stripping the mask layer from the substrate typically using reactive plasma and chlorine gas, thereby exposing the top surface of the conductive interconnect layer; and cooling and drying the wafer substrate by applying water and nitrogen gas to the wafer substrate.
- In a common IC fabrication technique known as a dual damascene technique, lower and upper dielectric layers are sequentially deposited on a substrate. A via opening is patterned and etched in the lower dielectric layer, and a trench opening is patterned and etched in the upper dielectric layer. At each step, a patterned photoresist layer is used to etch the trench and via openings in the corresponding dielectric layer. A conductive copper line is then formed in the trench and via openings, typically using electrochemical plating (ECP) techniques, to form the horizontal and vertical IC circuit interconnects on the substrate.
- Photoresist materials are coated onto the surface of a wafer, or onto a dielectric or conductive layer on a wafer, by dispensing a photoresist fluid typically on the center of the wafer as the wafer rotates at high speeds within a stationary bowl or coater cup. The coater cup catches excess fluids and particles ejected from the rotating wafer during application of the photoresist. The photoresist fluid dispensed onto the center of the wafer is spread outwardly toward the edges of the wafer by surface tension generated by the centrifugal force of the rotating wafer. This facilitates uniform application of the liquid photoresist on the entire surface of the wafer.
- During the photolithography step of semiconductor production, light energy is applied through a reticle or mask onto the photoresist material previously deposited on the wafer to define circuit patterns which will be etched in a subsequent processing step to define the circuits on the wafer. A reticle is a transparent plate patterned with a circuit image to be formed in the photoresist coating on the wafer. A reticle contains the circuit pattern image for only a few of the die on a wafer, such as four die, for example, and thus, must be stepped and repeated across the entire surface of the wafer. In contrast, a photomask, or mask, includes the circuit pattern image for all of the die on a wafer and requires only one exposure to transfer the circuit pattern image for all of the dies to the wafer.
- Spin coating of photoresist on wafers, as well as the other steps in the photolithography process, is carried out in an automated coater/developer track system using wafer handling equipment which transport the wafers between the various photolithography operation stations, such as vapor prime resist spin coat, develop, baking and chilling stations. Robotic handling of the wafers minimizes particle generation and wafer damage. Automated wafer tracks enable various processing operations to be carried out simultaneously. Two types of automated track systems widely used in the industry are the TEL (Tokyo Electron Limited) track and the SVG (Silicon Valley Group) track.
- A typical method of forming a circuit pattern on a wafer includes introducing the wafer into the automated track system and then spin-coating a photoresist layer onto the wafer. The photoresist is next cured by conducting a soft bake process. After it is cooled, the wafer is placed in an exposure apparatus, such as a stepper, which aligns the wafer with an array of die patterns etched on the typically chrome-coated quartz reticle. When properly aligned and focused, the stepper exposes a small area of the wafer, then shifts or “steps” to the next field and repeats the process until the entire wafer surface has been exposed to the die patterns on the reticle. The photoresist is exposed to light through the reticle in the circuit image pattern. Exposure of the photoresist to this image pattern cross-links and hardens the resist in the circuit pattern. After the aligning and exposing step, the wafer is exposed to post-exposure baking and then is developed and hard-baked to develop the photoresist pattern.
- The circuit pattern defined by the developed and hardened photoresist is next transferred to an underlying metal layer using an etching process, in which metal in the metal layer not covered by the cross-linked photoresist is etched away from the wafer with the metal under the cross-linked photoresist that defines the device feature protected from the etchant. Alternatively, the etched material may be a dielectric layer in which via openings and trench openings are etched according to the circuit pattern, such as in a dual damascene technique. The via and trench openings are then filled with a conductive metal such as copper to define the metal circuit lines. As a result, a well-defined pattern of metallic microelectronic circuits, which closely approximates the cross-linked photoresist circuit pattern, is formed on the wafer.
- One type of lithography which is used in the semiconductor fabrication industry is immersion lithography, in which an exposure apparatus includes a mask and lens which are provided over an optical transfer chamber. A water-containing exposure liquid is distributed through the optical transfer chamber. In operation, the optical transfer chamber is placed over an exposure field on a photoresist-coated wafer. As the exposure liquid is distributed through the optical transfer chamber, light is transmitted through the mask, lens and exposure liquid in the optical transfer Chamber, respectively, and onto the photoresist of the exposure field. The circuit pattern image in the mask is therefore transferred by the light transmitted through the exposure liquid to the photoresist. The exposure liquid in the optical transfer chamber enhances the resolution of the transmitted circuit pattern image on the photoresist.
- Prior to distribution of the exposure liquid through the optical transfer chamber, the aqueous liquid is typically de-gassed to remove most of the microbubbles from the liquid. However, some of the microbubbles remain in the liquid during its distribution through the optical transfer chamber. These remaining microbubbles have a tendency to adhere to the typically hydrophobic surface of the photoresist, thereby distorting the circuit pattern image projected onto the photoresist. Accordingly, an apparatus and method is needed to substantially obliterate microbubbles in an exposure liquid during immersion lithography in order to prevent distortion of the circuit pattern image projected onto the photoresist in an exposure field.
- An object of the present invention is to provide a novel apparatus for substantially eliminating microbubbles in an exposure liquid before or during immersion lithography.
- Another object of the present invention is to provide a novel megasonic exposure apparatus which is capable of substantially eliminating microbubbles in an exposure liquid before or during immersion lithography.
- Still another object of the present invention is to provide a novel megasonic exposure apparatus which enhances the quality of a circuit pattern image projected onto a photoresist during immersion lithography.
- Yet another object of the present invention is to provide a novel megasonic exposure apparatus in which sonic waves are used to substantially obliterate microbubbles in an exposure liquid before or during immersion lithography.
- A still further object of the present invention is to provide a novel megasonic immersion lithography exposure method in which sonic waves are used to substantially obliterate microbubbles in an exposure liquid before or during immersion lithography.
- A still further object of the present invention is to provide a novel megasonic immersion lithography exposure method in which sonic waves are used to substantially obliterate microbubbles and particles on exposure lens before or during immersion lithography.
- In accordance with these and other objects and advantages, the present invention is generally directed to a novel megasonic immersion lithography exposure apparatus for substantially eliminating microbubbles from an exposure liquid before, during or both before and during immersion lithography. In one embodiment, the apparatus includes an optical transfer chamber which is positioned over a resist-covered wafer, an optical housing which is fitted with a photomask and lens provided over the optical transfer chamber, and an inlet conduit for distributing an immersion liquid into the optical transfer chamber. At least one megasonic plate operably engages the inlet conduit to perpetuate sonic waves through the immersion liquid as the liquid is distributed through the inlet conduit and into the optical transfer chamber. The sonic waves substantially obliterate microbubbles in the exposure liquid such that the liquid enters the optical transfer chamber in a substantially bubble-free state, for the exposure step. In another embodiment, the apparatus includes an annular megasonic plate, which encircles the optical transfer chamber.
- The present invention is further directed to a method for substantially eliminating microbubbles in an exposure liquid used in an immersion lithography process for transferring a circuit pattern image from a mask or reticle to a resist-covered wafer. The method includes propagating sound waves through an exposure liquid before, during or both before and during distribution of the exposure liquid through an optical transfer chamber of an immersion lithography exposure apparatus. The sound waves substantially obliterate microbubbles in the exposure liquid and remove microbubbles from the resist surface, thereby preventing microbubbles from adhering to the resist on the surface of a wafer and distorting the circuit pattern image transferred from the apparatus, through the exposure liquid and onto the resist.
- The present invention is further directed to a method for substantially eliminating microbubbles and particle from exposure lens used in an immersion lithography process for transferring a circuit pattern image from a mask or reticle to a resist-covered wafer. The method includes propagating sound waves through an exposure liquid before, during or both before and during distribution of the exposure liquid through an optical transfer chamber of an immersion lithography exposure apparatus. The method also includes changing the exposure liquid before, during or both before and during exposure process. The sound waves substantially obliterate microbubbles and particles on the lens surface, thereby preventing microbubbles and particle from adhering to the surface of a emersion lens and distorting the circuit pattern image transferred from the apparatus, through the exposure liquid and onto the resist.
- The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
-
FIG. 1 is a schematic view of a megasonic immersion lithography apparatus according to a first embodiment of the present invention; -
FIG. 2 is a schematic view of a megasonic immersion lithography apparatus according to a second embodiment of the present invention; -
FIG. 3A is a flow diagram which illustrates sequential process steps carried out according to a first embodiment of the method of the present invention; -
FIG. 3B is a flow diagram which illustrates sequential process steps carried out according to a second embodiment of the method of the present invention; -
FIG. 3C is a flow diagram which illustrates sequential process step carried out according to a third embodiment of the method of the present invention. -
FIG. 3D is a flow diagram which illustrates sequential process step carried out according to a fourth embodiment of the method of the present invention. -
FIG. 3E is a flow diagram which illustrates sequential process step carried out according to a fifth embodiment of the method of the present invention. -
FIG. 4 is a schematic view of an illustrative embodiment of a lens cleaning module according to the present invention; -
FIG. 5 is a schematic view of another illustrative embodiment of a lens cleaning module according to the present invention; -
FIG. 6 is a schematic view of an exposure apparatus which is compatible with the lens cleaning modules of the present invention; -
FIG. 7 is a schematic view of still another illustrative embodiment of the lens cleaning module according to the present invention; -
FIG. 8A is a schematic view, partially in section, of another embodiment of the lens cleaning module according to the present invention; and -
FIG. 8B is a schematic view, partially in section, of yet another embodiment of the lens cleaning module according to the present invention. - The present invention contemplates a novel megasonic immersion lithography exposure apparatus for substantially eliminating microbubbles from an exposure liquid before, during, or both before and during immersion lithography. In one embodiment, the apparatus includes an optical housing which is fitted with a photomask and a lens. An optical transfer chamber is provided beneath the lens of the optical housing. An inlet conduit is provided in fluid communication with the optical transfer chamber to distribute an immersion liquid into the chamber. At least one megasonic plate operably engages the inlet conduit to perpetuate sonic waves through the immersion liquid as the liquid is distributed through the inlet conduit and into the optical transfer chamber. In another embodiment, an annular megasonic plate encircles the optical transfer chamber of the apparatus.
- In operation of the apparatus, the optical transfer chamber is positioned over an exposure field on a photoresist-coated wafer. The sonic waves generated by the megasonic plate or plates substantially obliterate microbubbles in the exposure liquid, such that the liquid enters the optical transfer chamber in a substantially bubble-free state. During the exposure step, light is transmitted through the photomask and lens, respectively, of the optical housing; through the exposure liquid in the optical transfer chamber; and onto the photoresist coated onto the wafer. The exposure liquid, substantially devoid of microbubbles, transmits the substantially distortion-free circuit pattern image onto the photoresist with high resolution.
- The present invention is further directed to a method for substantially eliminating microbubbles in an exposure liquid used in an immersion lithography process exposure step to transfer a circuit pattern image from a mask or reticle to an exposure field on a resist-covered wafer. In a first embodiment, the method includes propagating sound waves through an exposure liquid to obliterate microbubbles in the liquid before the exposure step. In a second embodiment, the method includes propagating sound waves through the exposure liquid both before and during the exposure step. In a third embodiment, the method includes intermittently propagating sound waves through the exposure liquid during the exposure step. The megasonic power applied by the megasonic plate or plates to the exposure liquid is preferably about 10-1,000 kHz.
- Any of a variety of exposure liquids are suitable for the megasonic immersion lithography method of the present invention. In one embodiment, the exposure liquid includes NH4, H2O2 and H2O in a concentration by volume ratio of typically about 1:1:10˜1:1:1000. In another embodiment, the exposure liquid includes NH4 and H2O in a concentration by volume ratio of typically about 1:10˜1:1000. In still another embodiment, the exposure liquid is deionized (DI) water. In yet another embodiment, the exposure liquid is ozonated (O3) water, having an ozone concentration of typically about 1˜1000 ppm. The exposure liquid may include a non-ionic surfactant, an anionic surfactant or a cationic surfactant having a concentration in the range of typically about 1˜1000 ppm.
- Referring initially to
FIG. 1 , a megasonic immersion lithography exposure apparatus, hereinafter exposure apparatus, of the present invention is generally indicated byreference numeral 10. Theexposure apparatus 10 includes awafer stage 28 for supporting awafer 34 having a photoresist layer (not shown) deposited thereon. Anoptical housing 12 contains an optical system having a laser (not shown) and the lastobjective lens 16 which is positioned above thewafer stage 28. A mask or reticle(not shown) is removably inserted in theoptical housing 12, above thelens 16. The mask or reticle includes a circuit pattern (not shown) which is to be transmitted onto the photoresist layer on thewafer 34 during a lithography process, which will be hereinafter described. An optical transferwater immersion chamber 18 is provided beneath the lastobjective lens 16 and is disposed above thewafer stage 28. During lithography, the laser beam through the mask or reticle, which produces a circuit pattern image that is transmitted through the lastobjective lens 16 and the optical transferwater immersion chamber 18, respectively, and onto thewafer 34. - An
inlet liquid reservoir 20, from which extends aninlet conduit 22, contains a supply ofexposure liquid 32. Adischarge conduit 22 a extends from theinlet conduit 22 and is provided in fluid communication with theoptical transfer chamber 18. Anoutlet liquid reservoir 26 is provided in fluid communication with theoptical transfer chamber 18 through a collectingconduit 24 a and anoutlet conduit 24, respectively. According to the present invention, amegasonic plate 30 is provided on theinlet conduit 22, according to the knowledge of those skilled in the art, to generate sonic waves (not shown) in theexposure liquid 32 as the liquid 32 is distributed through theinlet conduit 22. - In operation of the
exposure apparatus 10, as hereinafter further described, theexposure liquid 32 is distributed from theinlet liquid reservoir 20, through theinlet conduit 22 anddischarge conduit 22 a, respectively, and into the optical transferwater immersion chamber 18. Themegasonic plate 30 generates sonic waves (not shown) in theexposure liquid 32, obliterating all or most of the microbubbles in theexposure liquid 32. The laser beam from theoptical housing 12 which produces a circuit pattern image is transmitted through the lenslast objective 16 andexposure liquid 32 contained in the optical transferwater immersion chamber 18, respectively, and is projected onto the photoresist coated on thewafer 34. Theexposure liquid 32 is continuous pumped from the optical transferwater immersion chamber 18, through the collectingconduit 24 a andoutlet conduit 24, respectively, and into theoutlet liquid reservoir 26. - Referring next to
FIGS. 3A-3C , in conjunction withFIG. 1 , theexposure apparatus 10 can be operated according to one of three modes. According to the flow diagram ofFIG. 3A , the optical transferwater immersion chamber 18 is initially positioned over an exposure field on thewafer 34, as indicated instep 1. Themegasonic plate 30 is then turned on (step 2), followed by distribution of theexposure liquid 32 from theinlet liquid reservoir 20, through theinlet conduit 22 and into the optical transferwater immersion chamber 18, respectively (step 3). As the exposure liquid 32 passes through theinlet conduit 22, themegasonic plate 30 induces the formation of sonic waves in theexposure liquid 32. The sonic waves obliterate microbubbles in theexposure liquid 32, such that theexposure liquid 32 is substantially devoid of microbubbles upon entry into theoptical transfer chamber 18, Furthermore, the sonic waves also obliterate the microbubbles on the resist surface through the sonic wave transfer fromdischarge conduit 22 a to optical transferwater immersion chamber 18. - As indicated in
step 4, themegasonic plate 30 is turned off prior to exposing the exposure field on thewafer 34 to the circuit pattern image transmitted through the exposure liquid 32 (step 5), theexposure liquid 32 transmits a high-resolution circuit pattern image, which is undistorted by microbubbles onto the surface of the photoresist on thewafer 34. After completion of theexposure step 5, theoptical transfer chamber 18 is moved to the next exposure field on thewafer 34 and steps 1-5 are repeated, as indicated instep 6. - According to the flow diagram of
FIG. 3B , the optical transferwater immersion chamber 18 is initially positioned over an exposure field on thewafer 34, as indicated instep 1 a. Themegasonic plate 30 is then turned on (step 2 a), followed by distribution of theexposure liquid 32 from theinlet liquid reservoir 20, through theinlet conduit 22 and into the optical transferwater immersion chamber 18, respectively (step 3 a). The sonic waves generated by themegasonic plate 30 obliterate microbubbles in theexposure liquid 32 passing through theinlet conduit 22, such that theexposure liquid 32 is substantially devoid of microbubbles upon entry into theoptical transfer chamber 18 and the microbubbles adhered on thewafer 34 is therefore obliterate. - As indicated in
step 4 a, while themegasonic plate 30 remains on, the photoresist on thewafer 34 is exposed. Accordingly, during the exposure step (step 4 a), themegasonic plate 20 continues to obliterate microbubbles in theexposure liquid 32 and on the wafer resistsurface 34. The circuit pattern image transmitted from theoptical housing 12 through theoptical transfer chamber 18 is therefore undistorted by microbubbles and is projected onto the surface of the photoresist on thewafer 34 with a high resolution. After completion of theexposure step 4 a, themegasonic plate 30 may be turned off (FIG. 5 a). Theoptical transfer chamber 18 is then moved to the next exposure field on thewafer 34 and steps 1-5 are repeated, as indicated instep 6 a. - According to the flow diagram of
FIG. 3C , theoptical transfer chamber 18 is initially positioned over an exposure field on thewafer 34, as indicated instep 1 b. Themegasonic plate 30 is then turned on (step 2 b), and theexposure liquid 32 is distributed from theinlet liquid reservoir 20, through theinlet conduit 22 and into theoptical transfer chamber 18, respectively (step 3 b). The sonic waves generated by themegasonic plate 30 obliterate microbubbles in theexposure liquid 32 and on the wafer resistsurface 34, such that theexposure liquid 32 is substantially devoid of microbubbles upon entry into theoptical transfer chamber 18 and adhesion on top of the resistsurface 34. - As indicated in
step 4 b, the exposure step is carried out while themegasonic plate 30 is intermittently turned on and off. Accordingly, during exposure of thewafer 34, themegasonic plate 20 continues to obliterate microbubbles in theexposure liquid 32. After completion of theexposure step 4 b, theoptical transfer chamber 18 is moved to the next exposure field on thewafer 34 and steps 1-5 are repeated, as indicated instep 5 b. - According to the flow diagram of
FIG. 3D , the optical transferwater immersion chamber 18 is initially positioned over an exposure field on thewafer 34, as indicated instep 1 c. Themegasonic plate 30 is then turned on (step 2 c), followed by distribution of theexposure liquid 32 from theinlet liquid reservoir 20, through theinlet conduit 22 and into the optical transferwater immersion chamber 18, respectively (step 3 c). The sonic waves generated by themegasonic plate 30 obliterate microbubbles in theexposure liquid 32 passing through theinlet conduit 22, such that theexposure liquid 32 is substantially devoid of microbubbles upon entry into theoptical transfer chamber 18 and the microbubbles adhered on thewafer 34 is therefore obliterate. - As indicated in
step 4 a, while themegasonic plate 30 remains on, the photoresist on thewafer 34 is exposed. Accordingly, during the exposure step (step 4 c), themegasonic plate 20 continues to obliterate microbubbles in theexposure liquid 32 and on the wafer resistsurface 34. The circuit pattern image transmitted from theoptical housing 12 through theoptical transfer chamber 18 is therefore undistorted by microbubbles and is projected onto the surface of the photoresist on thewafer 34 with a high resolution. After completion of theexposure step 4 a, themegasonic plate 30 may be still turned on. Theoptical transfer chamber 18 is then moved to the next exposure field on thewafer 34 andsteps 4 c-5 c are repeated, as indicated instep 6 c. - According to the flow diagram of
FIG. 3E , the optical transferwater immersion chamber 18 is initially positioned over an exposure field on thewafer 34, as indicated instep 1 d. Themegasonic plate 30 is then turned on (step 2 d), followed by distribution of the first liquid 32 from theinlet liquid reservoir 20, through theinlet conduit 22 and into the optical transferwater immersion chamber 18, respectively (step 3 d). The sonic waves generated by themegasonic plate 30 obliterate microbubbles in theexposure liquid 32 passing through theinlet conduit 22 and removing particle on the low surface of the lastobjective lens 108, such that theexposure liquid 32 is substantially devoid of microbubbles upon entry into theoptical transfer chamber 18 and the particles adhered on the low surface of the lastobjective lens 108 is therefore obliterate. - As indicated in step 4D, while the
megasonic plate 30 remains on, followed by distribution of the second liquid from theinlet liquid reservoir 20, through theinlet conduit 22 and into the optical transferwater immersion chamber 18 to replace the first liquid (step 4 d), the photoresist on thewafer 34 is exposed. Accordingly, during the exposure step (step 6 d), the megasonic plate does not turn on (step 5 d). The circuit pattern image transmitted from theoptical housing 12 through the optical transferwater immersion chamber 18 is therefore undistorted by particles and is projected onto the surface of the photoresist on thewafer 34 with a high resolution. After completion of theexposure step 6 d, theoptical transfer chamber 18 is then moved to the next exposure field on thewafer 34 andsteps 6 d-7 d are repeated, as indicated instep 6 d. - According to the flow diagram of
FIG. 3F , the optical transferwater immersion chamber 18 is initially positioned over an exposure field on thewafer 34, as indicated instep 1 e. Themegasonic plate 30 is then turned on (step 2 e), followed by distribution of the first liquid 32 from theinlet liquid reservoir 20, through theinlet conduit 22 and into the optical transferwater immersion chamber 18, respectively (step 3 e). The sonic waves generated by themegasonic plate 30 obliterate microbubbles in theexposure liquid 32 passing through theinlet conduit 22 and removing particle on the low surface of the lastobjective lens 108, such that theexposure liquid 32 is substantially devoid of microbubbles upon entry into theoptical transfer chamber 18 and the particles adhered on the low surface of the lastobjective lens 108 is therefore obliterate. - As indicated in
step 4 e, while themegasonic plate 30 remains on, followed by distribution of the second liquid from theinlet liquid reservoir 20, through theinlet conduit 22 and into the optical transferwater immersion chamber 18 to replace the first liquid (step 4 e), the photoresist on thewafer 34 is exposed. Accordingly, during the exposure step (step 5 e), the megasonic plate still turn on (step 2 e). The circuit pattern image transmitted from theoptical housing 12 through the optical transferwater immersion chamber 18 is therefore undistorted by particles and is projected onto the surface of the photoresist on thewafer 34 with a high resolution. After completion of theexposure step 5 e, theoptical transfer chamber 18 is then moved to the next exposure field on thewafer 34 andsteps 5 e-6 e are repeated, as indicated instep 5 e. - Referring next to
FIG. 2 , in an alternative embodiment of the exposure apparatus, generally indicated by reference numeral 10 a, anannular megasonic plate 30 a is provided around the optical transferwater immersion chamber 18. The exposure apparatus 10 a can be operated according to the flow diagram ofFIG. 3A , wherein theannular megasonic plate 30 a is operated after theexposure liquid 32 is distributed into the optical transferwater immersion chamber 18 and then turned off prior to the exposure step; according to the flow diagram ofFIG. 3B , wherein theannular megasonic plate 30 a remains on during distribution of theexposure liquid 32 into the optical transferwater immersion chamber 18 and throughout the exposure process; or according to the flow diagram ofFIG. 3C , wherein theannular megasonic plate 30 a is turned on intermittently during the exposure step. In any case, theexposure liquid 32 contained in theoptical transfer chamber 18 is substantially devoid of microbubbles which could otherwise distort the circuit pattern image transmitted to thewafer 34 during the exposure step. - Referring next to
FIGS. 4 and 6 , an illustrative embodiment of a non-manual lens cleaning module according to the present invention is generally indicated byreference numeral 101 inFIG. 4 . As shown inFIG. 6 , thelens cleaning module 101 is suitable for implementation in conjunction with an exposure apparatus, 130, which may be conventional. AUV source 131 which emits ultraviolet light is provided at one end of theexposure apparatus 130. Preferably, theUV source 131 emits UV light having less than 480 nm. Anobjective lens 133 is provided at the opposite end of theexposure apparatus 130. Preferably, theobjective lens 133 has an N.A. of larger than about 0.35. Acondenser element 132 is provided between theUV source 131 and theobjective lens 133 to condense the ultraviolet light before it passes through theobjective lens 133. Amask 134 is provided between thecondenser element 132 and theobjective lens 133. Awafer 135 is supported on a wafer stage (not shown) beneath or adjacent to theobjective lens 133. Thelens cleaning module 101 may include a heating/drying module 114 for drying thelens 110 after cleaning. - In operation of the
exposure apparatus 130, theUV source 131 emits a beam of ultraviolet light, which passes first through thecondenser element 132, then through themask 134 andobjective lens 133, respectively. Themask 134 enables passage of light which corresponds to the circuit pattern to be transferred to thewafer 135. Theobjective lens 133 focuses the light, in the circuit pattern image defined by themask 134, on thewafer 135. Thelens cleaning module 101 can be incorporated into theexposure apparatus 130 to remove particles, liquid marks and residues from theobjective lens 133 in order to enhance the exposure quality of theexposure apparatus 130. - As shown in
FIG. 4 , thelens cleaning module 101 typically includes ascanning stage 102 which has bi-directional movement capability and is adapted to support awafer 112 beneath the exposure apparatus (not shown), such as theexposure apparatus 130 which was heretofore described with respect toFIG. 6 , for example. Adish 103 is provided above thescanning stage 102. Thedish 103 includes acentral dish opening 104 having abeveled dish surface 105. A cleaningfluid 108 is contained in thedish opening 104 of thedish 103. Theobjective lens 110 of the exposure apparatus is seated against thebeveled dish surface 105 of thedish 103 and contacts the cleaningfluid 108. Themask 111 of the exposure apparatus is provided above thelens 110. The cleaningfluid 108 may be acetone, IPA (isopropyl alcohol) or other solvent which does not contain water or fluoride and is incapable of damaging, corroding or reacting with the surface coating of theobjective lens 110. Accordingly, before, during and after exposure of thewafer 112 through themask 111 andlens 110, the fluid 108 removes particles, liquid marks and residues from thelens 110, thereby enhancing the exposure quality of the exposure apparatus and the precision of circuit pattern images transferred from themask 111 to thewafer 112. The heating/drying module 114 may utilize thermal, gas spray or other methods known by those skilled in the art to facilitate the evaporation of the cleaning fluid 108 from theobjective lens 110. - Referring next to
FIG. 5 , another illustrative embodiment of the lens cleaning module, of the present invention is generally indicated byreference numeral 116. Thelens cleaning module 116 typically includes ascanning stage 117, which may have bi-directional movement capability, as shown by the arrow, and is adapted to support awafer 124. Afluid retaining wall 118 is provided on thescanning stage 117 and is adapted to contain a cleaningfluid 119 on thescanning stage 117. Thelens 122 of the exposure apparatus contacts the cleaningfluid 119, and themask 123 is provided above thelens 122. Accordingly, during exposure of thewafer 124, the cleaningfluid 119 removes particles, liquid marks and residues from thelens 122, thereby enhancing the exposure quality of the exposure apparatus and the precision of circuit pattern images transferred from themask 123 to thewafer 124. Thelens cleaning module 116 may include a heating/drying module 126 which may utilize thermal, gas spray or other methods known by those skilled in the art to facilitate the evaporation of the cleaning fluid 119 from theobjective lens 122. - Referring next to
FIG. 7 , still another illustrative embodiment of the lens cleaning module of the present invention is generally indicated byreference numeral 140. Thelens cleaning module 140 includes awafer stage 141 which is adapted to support awafer 156. Theoptical housing 142 of the exposure apparatus is disposed above thewafer stage 141, and thelens 143 is provided on theoptical housing 142. Aliquid supply tank 146 is provided at one side of theoptical housing 142 and contains a supply of cleaningliquid 144. Aliquid supply conduit 147 extends from theliquid supply tank 146 to aliquid collecting area 148 beneath thelens 143. Aliquid recovery tank 150 is provided at the opposite side of theoptical housing 142. Aliquid recovery conduit 149 extends from theliquid recovery tank 150 to theliquid collecting area 148, typically opposite theliquid supply conduit 147. Aliquid sealing member 152 may be supported by asupport 153 and engage the upper edge of thewafer stage 141, beneath theliquid recovery tank 150, to prevent the inadvertent flow of cleaning liquid 144 from thewafer stage 141. Thelens cleaning module 140 may include a heating/drying module 158 which may utilize thermal, gas spray or other methods known by those skilled in the art to facilitate the evaporation of the cleaning liquid 144 from theobjective lens 143. - In use of the
lens cleaning module 140, cleaningliquid 144 is distributed from theliquid supply tank 146, through theliquid supply conduit 147 to theliquid collecting area 148, respectively. Simultaneously, the cleaningliquid 144 is pumped from theliquid collecting area 148, through theliquid recovery area 149 and into theliquid recovery tank 150, respectively. Accordingly, thelens 143 is continually exposed to the cleaningliquid 144 flowing through theliquid collecting area 148, thus removing particles, liquid marks and residues from thelens 122 and enhancing the exposure quality of the exposure apparatus and the precision of circuit pattern images transferred from themask 123 to thewafer 124. - Referring next to
FIG. 8A , yet another illustrative embodiment of the lens cleaning module according to the present invention is generally indicated byreference numeral 160. Thelens cleaning module 160 includes ascanning stage 161 for supporting a wafer (not shown). Acleaning stage 162, which may be removable, is positional above thescanning stage 161, and at least onecleaning unit 163 is provided on the upper surface of thecleaning stage 162, beneath theobjective lens 168 of the exposure apparatus. Eachcleaning unit 163 may be fixedly or pivotally mounted on thecleaning stage 162. Eachcleaning unit 163 typically includes acentral dispensing nozzle 164, and a collectingannulus 165, which encircles the dispensingnozzle 164. Aninlet conduit 166 extends through thecleaning stage 162 and is provided in fluid communication with the dispensingnozzle 164. A supply reservoir (not shown) which contains a supply of cleaningliquid 169 is provided in fluid communication with theinlet conduit 166. Anoutlet conduit 167 extends from the collectingannulus 165. A stand-by area (not shown) for thecleaning stage 162 may be provided next to thelens cleaning module 160. Thelens cleaning module 160 may include a heating/drying module 182 which may utilize thermal, gas spray or other methods known by those skilled in the art to facilitate the evaporation of the cleaning liquid 169 from theobjective lens 168. - In use of the
lens cleaning module 160, the cleaningliquid 169 is distributed through theinlet conduit 166 and ejected from the dispensingnozzle 164 and against thelens 168 to remove particles, liquid marks and residues from thelens 168. The cleaning liquid 169 falls into the collectingannulus 165 and is distributed through theoutlet conduit 167 to a suitable receptacle or outlet (not shown). - Referring next to
FIG. 8B , still another embodiment of the lens cleaning module according to the present invention is generally indicated byreference numeral 170. Thelens cleaning module 170 includes a scanning stage 171 for supporting a wafer (not shown). Acleaning stage 172 is provided above the scanning stage 171. At least onecleaning unit 179 is provided on thecleaning stage 172. Eachcleaning unit 179 may be fixedly or pivotally mounted on thecleaning stage 172. Eachcleaning unit 179 includes a dispensingnozzle 173 which is directed toward theobjective lens 177 of the exposure apparatus and acollector 174 which is adjacent to the dispensingnozzle 173. Aninlet conduit 175 is provided in fluid communication with the dispensingnozzle 173 and is connected to a supply (not shown) of cleaningliquid 178. Anoutlet conduit 176 extends from thecollector 174. Thelens cleaning module 170 may include a heating/drying module 184 which may utilize thermal, gas spray or other methods known by those skilled in the art to facilitate the evaporation of the cleaning liquid 178 from theobjective lens 177. - In use of the
lens cleaning module 170, the cleaningliquid 178 is distributed through theinlet conduit 175 and ejected from the dispensingnozzle 173, against thelens 177 to remove particles, liquid marks and residues from thelens 177. After striking thelens 177, the cleaning liquid 178 falls into thecollector 174 and is distributed through theoutlet conduit 176 to a suitable receptacle or outlet (not shown). - In the various embodiments, the lens cleaning modules of the present invention can be integrated with the lithography system of which they are a part for automated cleaning of the objective lens in the exposure apparatus. Accordingly, pre-cleaning and post-cleaning of the objective lens before and after exposure, respectively, is possible. The cycle time of each cleaning cycle may be set by recipe for automatic implementation. The frequency of lens cleaning can be as high as once per exposed wafer, thus decreasing periodic maintenance (PM) manpower and cycle time to maintain consistent maintenance quality. Furthermore, the lens cleaning module can be movable with respect to the exposure apparatus to facilitate cleaning and maintenance of the lens cleaning module, for example. Moreover, each lens cleaning module may utilize contact with a physical object such as a sponge, for example, alone or in combination with a cleaning fluid or immersion liquid, as was heretofore described. In that case, the lens cleaning module typically includes a contacting material such as a sponge; a cleaning fluid or solvent which is contacted by the contacting material prior to contact of the material with the lens; and a collecting system for collecting the fluid or solvent. Referring again to
FIG. 6 , each lens cleaning module may be adapted to additionally or alternatively clean thecondenser element 132, windows (not shown) or other element or elements of theexposure apparatus 130 of which they are a part. - While the preferred embodiments of the invention have been described above, it will be recognized and understood that various modifications can be made in the invention and the appended claims are intended to cover all such modifications which may fall within the spirit and scope of the invention.
Claims (21)
1-20. (canceled)
21. A lithography system having an exposure apparatus including an objective lens, the lithography system comprising:
a lens cleaning module operable to provide a cleaning fluid;
an immersion fluid module operable to provide an immersion fluid, the immersion fluid module being different than the lens cleaning module and the immersion fluid being different than the cleaning fluid;
a scanning stage for supporting a wafer beneath the objective lens; and
a fluid retaining wall carried by the scanning stage and operable to retain the cleaning fluid on the scanning stage, wherein when the lens cleaning module provides the cleaning fluid directly on the scanning stage only the cleaning fluid contacts the objective lens during cleaning of the objective lens.
22. The lithography system of claim 21 , wherein the fluid retaining wall is operable to retain the immersion fluid on the scanning stage.
23. The lithography system of claim 22 , wherein the fluid retaining wall retains one of the immersion fluid and the cleaning fluid on the scanning stage during exposure of the wafer.
24. The lithography system of claim 21 , wherein the cleaning fluid is retained by the fluid retaining wall such that the cleaning fluid contacts the objective lens during exposure of the wafer.
25. The lithography system of claim 21 , wherein the scanning stage defines an exposure field, and
wherein the fluid retaining wall is coupled to the scanning stage around the exposure field.
26. The lithography system of claim 21 , wherein the cleaning fluid is one of isopropyl alcohol, acetone, or a solvent.
27. The lithography system of claim 21 , further comprising a heating/drying module associated with the lens cleaning module for drying the objective lens.
28. The lithography system of claim 21 , wherein the heating/drying module uses one of thermal and gas spray for drying the objective lens.
29. A method comprising:
providing an immersion lithography system having a lens cleaning module and an immersion fluid module that is different from the lens cleaning module, the lens cleaning module operable to provide a cleaning fluid and the immersion fluid module operable to provide an immersion fluid;
loading a wafer on a stage of the lithography system;
providing the cleaning fluid directly onto the stage by the lens cleaning module, the cleaning fluid retained by a fluid retaining wall associated with the stage, the fluid retaining wall configured to retain the cleaning fluid such that the cleaning fluid is in contact with an objective lens of the immersion lithography system; and
cleaning a surface of the objective lens utilizing the cleaning fluid provided by the lens cleaning module, wherein only the cleaning fluid contacts the objective lens during the cleaning.
30. The method of claim 29 , further comprising providing the immersion fluid directly onto the stage by the immersion fluid module, the immersion fluid retained by the fluid retaining wall associated with the stage.
31. The method of claim 29 , wherein the fluid retaining wall is configured to retain the immersion fluid on the stage such that the immersion fluid is in direct contact with the objective lens.
32. The method of claim 29 , wherein the fluid retaining wall is configured to allow for the passage of an exposure light through the immersion fluid to an exposure field.
33. The method of claim 29 , further comprising exposing the wafer on the stage of the lithography system while cleaning the surface of the objective lens utilizing the cleaning fluid provided by the lens cleaning module.
34. The method of claim 29 , wherein cleaning the surface of the objective lens utilizing the cleaning fluid provided by the lens cleaning module occurs while the objective lens is over the wafer.
35. A lithography system comprising:
a lens cleaning module having:
a scanning stage defining an exposure field;
a cleaning stage removably coupled to the scanning stage, the cleaning stage having a top surface facing an objective lens of the lithography system; and
a cleaning unit coupled to the cleaning stage, the cleaning unit comprising a dispensing nozzle and a cone-shaped collecting annulus extending from the top surface of the cleaning stage toward the objective lens, the cleaning unit configured to clean the objective lens with a first fluid while the objective lens is over the exposure field.
36. The lithography system of claim 35 , furthering comprising an immersion fluid module operable to provide a second fluid onto the scanning stage, the second fluid being different than the first fluid.
37. The lithography system of claim 35 , wherein the dispending nozzle is operable to provide the first liquid against the objective lens such that the first liquid is deflected into the cone-shaped collecting annulus.
38. The lithography system of claim 35 , wherein the dispensing nozzle is centrally disposed within the cone-shaped collecting annulus.
39. The lithography system of claim 35 , wherein the dispensing nozzle and the cone-shaped collecting annulus are fixedly mounted to the cleaning stage.
40. The lithography system of claim 35 , wherein the dispensing nozzle and the cone-shaped collecting annulus are pivotally mounted to the cleaning stage such that the dispensing nozzle and the cone-shaped collecting annulus each pivots relative to the cleaning stage.
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US13/282,745 US20120038894A1 (en) | 2004-08-03 | 2011-10-27 | Lens Cleaning Module |
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US11/222,319 US8054444B2 (en) | 2004-08-03 | 2005-09-07 | Lens cleaning module for immersion lithography apparatus |
US13/282,745 US20120038894A1 (en) | 2004-08-03 | 2011-10-27 | Lens Cleaning Module |
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US11/222,319 Expired - Fee Related US8054444B2 (en) | 2004-08-03 | 2005-09-07 | Lens cleaning module for immersion lithography apparatus |
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US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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2004
- 2004-08-03 US US10/910,480 patent/US7224427B2/en active Active
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2005
- 2005-07-01 TW TW094122463A patent/TWI304523B/en not_active IP Right Cessation
- 2005-09-07 US US11/222,319 patent/US8054444B2/en not_active Expired - Fee Related
-
2011
- 2011-10-27 US US13/282,745 patent/US20120038894A1/en not_active Abandoned
Patent Citations (1)
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JPH11176727A (en) * | 1997-12-11 | 1999-07-02 | Nikon Corp | Projection aligner |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8564759B2 (en) | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
Also Published As
Publication number | Publication date |
---|---|
US20060028626A1 (en) | 2006-02-09 |
TW200606597A (en) | 2006-02-16 |
TWI304523B (en) | 2008-12-21 |
US7224427B2 (en) | 2007-05-29 |
US20060028628A1 (en) | 2006-02-09 |
US8054444B2 (en) | 2011-11-08 |
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Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIN, BURN-JENG;LU, DAVID;REEL/FRAME:027132/0042 Effective date: 20050830 |
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