US20120103523A1 - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
- Publication number
- US20120103523A1 US20120103523A1 US13/282,665 US201113282665A US2012103523A1 US 20120103523 A1 US20120103523 A1 US 20120103523A1 US 201113282665 A US201113282665 A US 201113282665A US 2012103523 A1 US2012103523 A1 US 2012103523A1
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- United States
- Prior art keywords
- processing apparatus
- plasma processing
- gas
- processing chamber
- ceiling plate
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 description 80
- 238000001020 plasma etching Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- -1 e.g. Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
The present disclosure provides a plasma processing apparatus capable of improving uniformity of a process on a substrate surface. The plasma processing apparatus performs a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber. The plasma processing apparatus includes a processing chamber main body having a top opening and formed in a container shape; an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging annular dielectric members and metal members, all having different diameters, and by airtightly sealing gaps between the dielectric members and the metal members; gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and a high frequency coil provided on an upper portion of the dielectric members and provided at the outside of the processing chamber.
Description
- This application claims the benefit of Japanese Patent Application No. 2010-240867 filed on Oct. 27, 2010, and U.S Provisional Application Ser. No. 61/413,506 filed on Nov. 15, 2010, the entire disclosures of which are incorporated herein by reference in their entirety.
- The present invention relates to a plasma processing apparatus.
- Conventionally, in a semiconductor device manufacturing field, there is known a plasma processing apparatus using inductively coupled plasma (ICP) as an apparatus for performing a process such as a film forming process or an etching process on a substrate such as a semiconductor wafer.
- In a plasma processing apparatus having a high frequency coil provided above an upper portion of a processing chamber, as a processing gas supply structure of the plasma processing apparatus using ICP, a processing gas supply device of an annular hollow pipe is provided around a substrate, i.e., in a space between the high frequency coil and the substrate. Further, a processing gas is discharged into a space above the substrate from a multiple number of gas discharge openings formed at an inner periphery of the hollow pipe (for example, see Patent Document 1).
- Meanwhile, in a plasma processing apparatus having a high frequency coil provided at a sidewall of a processing chamber, for example, a processing gas is discharged from an upper center of the processing chamber to a space above a substrate (for example, see Patent Document 2).
- Further, there is also known a plasma processing apparatus including multiple channels, each having a gas supply mechanism, and RF coils for supplying powers to the multiple channels individually (see, e.g., Patent Document 3).
- As the above-described processing gas supply structures, a nozzle type structure having holes or slits is used. In the plasma processing apparatus having the high frequency coil provided above the upper portion of the processing chamber, if there exists a large structure for introducing the gas to above the substrate, the substrate are blocked by the large structure, so that a non-uniform process on the substrate may be performed. Meanwhile, if a gas diffusion space is provided above the substrate and below the high frequency coil, a means to prevent an electric discharge in this space may be needed. For this reason, a region for discharging a gas is basically limited to a central portion and an outer peripheral portion of the substrate.
- Patent Document 1: Japanese Patent Laid-open Publication No. 2001-085413
- Patent Document 3: Japanese Patent Laid-open Publication No. H09-237698
- As described above, in the conventional plasma processing apparatus and the processing gas supply structure thereof, since the region for discharging a gas is limited, it may be difficult to improve uniformity of a process on a substrate surface by controlling a supply of the processing gas.
- BRIEF SUMMARY OF THE INVENTION
- In view of the above, the present disclosure provides a plasma processing apparatus and a processing gas supply structure thereof, capable of improving uniformity of a process on a substrate surface in comparison with a conventional apparatus.
- In accordance with the present disclosure, there is provided a plasma processing apparatus for performing a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber. The plasma processing apparatus includes a processing chamber main body having a top opening and formed in a container shape; an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging multiple annular dielectric members and multiple metal members, all having different diameters, and by airtightly sealing gaps between the multiple dielectric members and the multiple metal members; multiple gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and a high frequency coil provided on an upper portion of the multiple dielectric members and provided at the outside of the processing chamber.
- In accordance with the present disclosure, it may be possible to provide a plasma processing apparatus and a processing gas supply structure thereof, capable of improving uniformity of a process on a substrate surface in comparison with a conventional apparatus.
- Non-limiting and non-exhaustive embodiments will be described in conjunction with the accompanying drawings. Understanding that these drawings depict only several embodiments in accordance with the disclosure and are, therefore, not to be intended to limit its scope, the disclosure will be described with specificity and detail through use of the accompanying drawings, in which:
-
FIG. 1 is a schematic cross sectional view showing a configuration of a plasma etching apparatus in accordance with an embodiment of the present disclosure; -
FIG. 2 is a cross sectional view showing major parts of the plasma etching apparatus ofFIG. 1 ; -
FIG. 3 is a top view illustrating a schematic configuration of the plasma etching apparatus ofFIG. 1 ; -
FIG. 4 is a cross sectional view illustrating a schematic configuration of a plasma etching apparatus in accordance with another embodiment of the present disclosure; and -
FIG. 5 is a cross sectional view illustrating a schematic configuration of an embodiment of a temperature control device in accordance with the present disclosure. - Hereinafter, the embodiments of the present disclosure will be described with reference to the accompanying drawings.
-
FIG. 1 is a schematic diagram showing a configuration of a plasma etching apparatus 1 as a plasma processing apparatus in accordance with an embodiment of the present disclosure. As shown inFIG. 1 , the plasma etching apparatus 1 may include a processing chamber 10. The processing chamber 10 may have a substantially cylindrical shape and be made of, e.g., aluminum whose surface is anodically oxidized. Further, the processing chamber 10 may include a processing chamber main body 11 having a top opening and formed in a container shape; and anupper lid 12 disposed to cover the top opening of the processing chamber main body 11. - The
upper lid 12 may be made of, e.g., aluminum whose surface is anodically oxidized. Theupper lid 12 may include aframe body 13 having anopening 13 a, and aceiling plate 14 provided so as to close theopening 13 a of theframe body 13. - As shown in
FIGS. 2 and 3 , theceiling plate 14 may include multiple annulardielectric members 15 a to 15 c andmetal members 16 a to 16 c. The annulardielectric members 15 a to 15 c and themetal members 16 a to 16 c are alternately and concentrically stacked. Among themetal members 16 a to 16 c, themetal members metal member 16 c may have a circular plate shape. - Further, the
dielectric member 15 c may be provided outside themetal member 16 c disposed at a central portion of theceiling plate 14; themetal member 16 b may be provided outside thedielectric member 15 c; thedielectric member 15 b may be provided outside themetal member 16 b; themetal member 16 a may be provided outside thedielectric member 15 b; and thedielectric member 15 a may be provided outside themetal member 16 a. The outer side of thedielectric member 15 a may be fitted into an inner wall portion of the opening 13 a of theframe body 13. - In the present embodiment, although the
dielectric members 15 a to 15 c may be made of quartz, another dielectric material, e.g., ceramic can be used. Moreover, in the present embodiment, although themetal members 16 a to 16 c may be made of aluminum whose surfaces are anodically oxidized, another metal, e.g., stainless steel may be used instead. - The
ceiling plate 14 including thedielectric members 15 a to 15 c and themetal members dielectric members 15 a to 15 c and themetal members 16 a to 16 c, and a gap between the outermostdielectric member 15 a and theframe body 13 may be airtightly sealed. - As described above, by forming the
ceiling plate 14 in the dome shape, a damage of theceiling plate 14 due to a pressure difference between the interior, which is under a depressurized atmosphere, and the exterior of the processing chamber 10 can be suppressed. Further, besides using a seal member such as an O-ring, thedielectric members 15 a to 15 c and themetal members 16 a to 16 c can be airtightly sealed by joining thedielectric members 15 a to 15 c and themetal members dielectric members 15 a to 15 c so as to contact the metal films to themetal members 16 a to 16 c. - A
high frequency coil 17 may be provided on thedielectric members 15 a to 15 c. Thehigh frequency coil 17 may be connected to a non-illustrated high frequency power supply. A high frequency power having a certain frequency, e.g., about 13.56 MHz may be applied to thehigh frequency coil 17. - A
beam member 31 may be provided at an upper portion of theceiling plate 14 so as to traverse theopening 13 a. Thebeam member 31 may have a substantially cross shape when viewed from above, as shown inFIG. 3 . Further, the shape of thebeam member 31 is not limited to the cross shape, and thebeam member 31 can have any shape. - Moreover, as shown in
FIG. 1 , supportingportions 31 a to 31 c may be formed at lower portions of thebeam member 31. Further, the supportingportions 31 a to 31 c may be protruded downward to correspond to themetal members 16 a to 16 c, respectively. The supportingportions 31 a to 31 c may be in direct contact with themetal members 16 a to 16 c. Further, thebeam member 31 and themetal members 16 a to 16 c may be fixed byscrews 32. In this way, theceiling plate 14 may be supported by thebeam member 31. - Gas inlets 18 a to 18 c may be provided at the
beam member 31. Thegas inlets 18 a to 18 c are connected togas channels 19 a to 19 c provided within themetal members 16 a to 16 c, respectively. - As illustrated in
FIG. 2 , thegas channels annular metal members annular gas channels vertical gas channels annular gas channels annular metal members vertical gas channels annular gas channels gas inlets gas discharge openings annular gas channels FIG. 2 , only one for each is shown). - Further, the
gas channel 19 c formed within themetal member 16 c may include a circular gas channel 190 c having a circular shape and serving as a gas diffusion space, and avertical gas channel 191 c connecting the circular gas channel 190 c and thegas inlet 18 c. Multiplegas discharge openings 20 c may be formed at the circular gas channels 190 c at a regular interval. - A processing gas supplied into the
gas inlets 18 a to 18 c provided at thebeam member 31 from a non-illustrated processing gas supply source may be introduced into the processing chamber 10 from thegas discharge openings 20 a to 20 c via thegas channels 19 a to 19 c provided within themetal members 16 a to 16 c, respectively. - As illustrated in
FIG. 1 , within the processing chamber 10, a mounting table 21 for mounting thereon a substrate, e.g., a semiconductor wafer may be provided so as to be located below theceiling plate 14. Accordingly, a substrate mounting surface of the mounting table 21 and theceiling plate 14 may be arranged so as to face each other. A non-illustrated electrostatic chuck or the like for attracting and holding the substrate may be provided on the substrate mounting surface of the mounting table 21. - A non-illustrated high frequency power supply for applying a bias voltage may be connected to the mounting table 21. Further, the
metal members 16 a to 16 c of theceiling plate 14 positioned to face the mounting table 21 may be connected to a certain potential, e.g., a ground potential in the present embodiment, and may function as a facing electrode facing the mounting table 21. - An annular
gas exhaust space 22 for exhausting a gas downward may be formed around the mounting table 21. The annulargas exhaust space 22 may communicate with a gas exhaust unit via a gas exhaust port (all of which are not shown). Further, abaffle plate 24 for partitioning aprocessing space 23 above the mounting table 21 and the annulargas exhaust space 22 may be provided around the mounting table 21. - Further, a loading/unloading
port 25 for loading and unloading a substrate to be processed may be formed at a sidewall of the processing chamber main body 11. A non-illustrated opening/closing mechanism, e.g., a gate valve may be provided at the loading/unloadingport 25. - In the plasma etching apparatus 1 configured as described above, the
ceiling plate 14 may include thedielectric members 15 a to 15 c and themetal members 16 a to 16 c. The processing gas may be supplied from themetal members 16 a to 16 c, and thedielectric members 15 a to 15 c may function as dielectric windows for thehigh frequency coil 17. - Since no gas diffusion space is provided next to the
high frequency coil 17, it may be possible to prevent an electric discharge from occurring in the gas diffusion space. Moreover, regions for discharging the processing gas may not be limited to the central portion and the peripheral portion of the substrate, but can be provided to positions corresponding to a multiple number of certain positions of the substrate in a diametrical direction. Therefore, it may be possible to uniformly supply the processing gas into theprocessing space 23 above the substrate. As a result, it may be possible to improve uniformity of a process on a substrate surface. Alternatively, by non-uniformly supplying the processing gas into theprocessing space 23, it may be possible to control a plasma process as desired. Further, since themetal members 16 a to 16 c may serve as a facing electrode, it may be possible to easily control the plasma process. Moreover, as described above, since theceiling plate 14 may be formed by alternatively connecting thedielectric members 15 a to 15 c and themetal members 16 a to 16 c, thedielectric members 15 a to 15 c and themetal members 16 a to 16 c may not be airtightly sealed because of a difference in thermal expansion coefficient therebetween. Therefore, it may be desirable to provide atemperature control device 50 for controlling the temperature of theceiling plate 14 within a certain temperature range. - Hereinafter, an embodiment of the
temperature control device 50 will be explained with reference toFIG. 5 . As depicted inFIG. 5 , thetemperature control device 50 may include atemperature maintaining cover 53 configured to cover theupper lid 12 and thebeam member 31; an inlet pipe for introducing a temperature-controlled gas; and anoutlet pipe 54 for exhausting the temperature-controlled gas. Further, theinlet pipe 52 and theoutlet pipe 54 are connected to thetemperature maintaining cover 53, and aheat exchanger 55 is provided at a downstream of theoutlet pipe 54. Air or an inert gas such as helium gas may be used as the temperature-controlled gas. Further, a temperature of the temperature-controlled gas is controlled by a non-illustrated device, e.g., a vaporizer, for generating heated air or a heated gas. A thermal insulator (not shown) for blocking an influence of an exterior temperature may be provided in thetemperature maintaining cover 53. Here, theheat exchanger 55 is configured to cool the temperature-controlled gas to make the temperature of the temperature-controlled gas similar to the exterior temperature. By way of example, if the temperature of the temperature-controlled gas is low, the temperature-controlled gas may be heated by theheat exchanger 55 to have an approximately similar temperature to the exterior temperature, and then, may be evacuated to the outside. - When a plasma etching process is performed on a semiconductor wafer (substrate) by the plasma etching apparatus 1 configured as described above, the substrate may be loaded into the processing chamber 10 through the loading/unloading
port 25 after the non-illustrated opening/closing mechanism opens the loading/unloadingport 25. Then, the substrate may be mounted on the mounting table 21, and may be attracted to and held on the electrostatic chuck. - Thereafter, the non-illustrated opening/closing mechanism closes the loading/unloading
port 25, and then, the inside of the processing chamber 10 may be evacuated to a certain vacuum level from the annulargas exhaust space 22 by a non-illustrated vacuum pump. - Subsequently, a processing gas (etching gas) having a certain flow rate may be supplied into the processing chamber 10. At this time, the processing gas introduced from the
gas inlets 18 a to 18 c may be supplied into the processing chamber 10 from thegas discharge openings 20 a to 20 c via thegas channels 19 a to 19 c provided within themetal members 16 a to 16 c, respectively. - Subsequently, after the inside of the processing chamber 10 is maintained at a certain pressure, a high frequency power having a certain frequency may be applied to the
high frequency coil 17. Accordingly, in theprocessing space 23 above the substrate within the processing chamber 10, ICP (Inductively Coupled plasma) of the etching gas may be generated. Further, when necessary, a high frequency bias power may be applied from a non-illustrated high frequency power supply to the mounting table 21. Accordingly, an etching process can be performed on the substrate by using the ICP. - At this time, since the processing gas is supplied from multiple positions within the processing chamber 10 by the processing gas supply structure including the
gas inlets 18 a to 18 c, thegas channels 19 a to 19 c, and thegas discharge openings 20 a to 20 c, the processing gas can be more uniformly supplied over the substrate. Further, the processing gas supply structure is provided at themetal members 16 a to 16 c, and a member for blocking an electromagnetic field is not provided at thedielectric members 15 a to 15 c having thereon thehigh frequency coil 17. Accordingly, it may be possible to suppress the non-uniformity of the process on the substrate, which is caused by blocking the electromagnetic field induced into theprocessing space 23 by thehigh frequency coil 17. As a result, a plasma state can be uniformized, so that an etching process can be uniformly performed on each portion of the substrate. That is, it may be possible to improve uniformity of the process on the substrate surface. - Upon the completion of the plasma etching process, the application of the high frequency power and the supply of the processing gas may be stopped, and the substrate may be unloaded from the processing chamber 10 in the order reverse to that described above.
- Moreover, the present disclosure is not limited to the above-described embodiments but can be modified in various ways. For example, the shape of the
ceiling plate 14 formed at the upper lid may not be limited to the dome shape. As in theplasma etching apparatus 101 shown inFIG. 4 , theceiling plate 14 can have a flat plate shape. In this case, thebeam member 31 may be also formed in a flat plate shape, and may include agroove 40 for burying therein thehigh frequency coil 17. Moreover, as for contact surfaces of the airtightly sealedmetal members 16 a to 16 c and thedielectric members 15 a to 15 c, it may be desirable to make inclined surfaces, not vertical surfaces, come into contact with each other as shown inFIG. 4 . Further, inFIG. 4 , like reference numerals will be given to parts corresponding to those of the plasma etching apparatus 1 and redundant description thereof will be omitted. - Further, in the above-described embodiments, although the numbers of the
dielectric members 15 a to 15 c and themetal members 16 a to 16 c of theceiling plate 14 are three, respectively, the numbers of thedielectric members 15 a to 15 c and themetal members 16 a to 16 c may not be limited to three. For example, two or more than three can be provided.
Claims (12)
1. A plasma processing apparatus for performing a process on a substrate accommodated in a processing chamber by generating inductively coupled plasma in the processing chamber, the plasma processing apparatus comprising:
a processing chamber main body having a top opening and formed in a container shape;
an upper lid, configured to cover the top opening, having a ceiling plate formed by alternately and concentrically arranging a plurality of annular dielectric members and a plurality of metal members, all having different diameters, and by airtightly sealing gaps between the plurality of dielectric members and the plurality of metal members;
a plurality of gas introduction units provided at the metal members, for supplying a processing gas into the processing chamber; and
a high frequency coil provided on an upper portion of the plurality of dielectric members and provided at the outside of the processing chamber.
2. The plasma processing apparatus of claim 1 ,
wherein the upper lid includes a frame body having an opening airtightly sealed by the ceiling plate,
a beam member is provided at the frame body so as to traverse the opening, and
the metal members of the ceiling plate are supported by the beam member.
3. The plasma processing apparatus of claim 1 , wherein the ceiling plate is formed in a dome shape.
4. The plasma processing apparatus of claim 2 , wherein the ceiling plate is formed in a dome shape.
5. The plasma processing apparatus of claim 1 , wherein the ceiling plate is formed in a flat plate shape.
6. The plasma processing apparatus of claim 2 , wherein the ceiling plate is formed in a flat plate shape.
7. The plasma processing apparatus of claim 1 , wherein the upper lid includes a temperature control device.
8. The plasma processing apparatus of claim 2 , wherein the upper lid includes a temperature control device.
9. The plasma processing apparatus of claim 3 , wherein the upper lid includes a temperature control device.
10. The plasma processing apparatus of claim 4 , wherein the upper lid includes a temperature control device.
11. The plasma processing apparatus of claim 5 , wherein the upper lid includes a temperature control device.
12. The plasma processing apparatus of claim 6 , wherein the upper lid includes a temperature control device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US13/282,665 US20120103523A1 (en) | 2010-10-27 | 2011-10-27 | Plasma processing apparatus |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2010-240867 | 2010-10-27 | ||
JP2010240867A JP5745812B2 (en) | 2010-10-27 | 2010-10-27 | Plasma processing equipment |
US41350610P | 2010-11-15 | 2010-11-15 | |
US13/282,665 US20120103523A1 (en) | 2010-10-27 | 2011-10-27 | Plasma processing apparatus |
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US20120103523A1 true US20120103523A1 (en) | 2012-05-03 |
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US13/282,665 Abandoned US20120103523A1 (en) | 2010-10-27 | 2011-10-27 | Plasma processing apparatus |
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US (1) | US20120103523A1 (en) |
JP (1) | JP5745812B2 (en) |
KR (1) | KR101287081B1 (en) |
CN (1) | CN102456531B (en) |
TW (1) | TWI512780B (en) |
Cited By (1)
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US9472379B2 (en) * | 2014-06-20 | 2016-10-18 | Applied Materials, Inc. | Method of multiple zone symmetric gas injection for inductively coupled plasma |
Families Citing this family (3)
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JP6228400B2 (en) * | 2013-07-16 | 2017-11-08 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
JP6600990B2 (en) * | 2015-01-27 | 2019-11-06 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP6877133B2 (en) * | 2016-03-28 | 2021-05-26 | 株式会社日立ハイテク | Plasma processing equipment and plasma processing method |
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Also Published As
Publication number | Publication date |
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CN102456531B (en) | 2014-10-08 |
JP5745812B2 (en) | 2015-07-08 |
TWI512780B (en) | 2015-12-11 |
KR101287081B1 (en) | 2013-07-17 |
KR20120047793A (en) | 2012-05-14 |
CN102456531A (en) | 2012-05-16 |
TW201237922A (en) | 2012-09-16 |
JP2012094690A (en) | 2012-05-17 |
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