US20120289131A1 - Cmp apparatus and method - Google Patents
Cmp apparatus and method Download PDFInfo
- Publication number
- US20120289131A1 US20120289131A1 US13/106,871 US201113106871A US2012289131A1 US 20120289131 A1 US20120289131 A1 US 20120289131A1 US 201113106871 A US201113106871 A US 201113106871A US 2012289131 A1 US2012289131 A1 US 2012289131A1
- Authority
- US
- United States
- Prior art keywords
- shaped segment
- cmp apparatus
- annular
- polishing pad
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Definitions
- the present invention relates generally to the field of chemical mechanical polishing or chemical mechanical planarization (CMP) techniques. More particularly, the present invention relates to an improved CMP apparatus and a CMP method capable of precisely controlling the polishing uniformity in the CMP process.
- CMP chemical mechanical polishing or chemical mechanical planarization
- CMP chemical mechanical planarization
- FIG. 1 illustrates a conventional CMP polishing unit.
- the CMP polishing unit 30 may comprise a platen 300 connected to a shaft 301 for rotating the platen 300 about its central axis during polishing.
- a polishing pad 310 is mounted on the platen 300 .
- a wafer 322 is held and rotated by a carrier 320 .
- slurry is sprayed onto the polishing pad 310 by a slurry feeding device 330 .
- the rotating wafer 322 is pressed against the polishing pad 310 by the carrier 320 to cause relative movement between the polishing surface of the polishing pad 310 and the wafer 322 , thereby producing a combined mechanical and chemical effect on the surface of the wafer.
- the polishing pad 310 is typically made several times the diameter of the wafer 322 .
- the wafer 322 is kept off-center on the rotating polishing pad 310 during the polishing process.
- One problem associated with the conventional CMP techniques is the difficulty in controlling polishing rates at different locations on a wafer surface. Since the polishing rate applied to a wafer surface is generally proportional to the relative rotational velocity of the polishing pad, the polishing rate at a specific point on the wafer surface depends on the distance from the axis of rotation. It is desirable to control the uniformity in the CMP process because it enables the subsequent use of a high-resolution lithographic process to fabricate the next level circuit. The accuracy of a high resolution lithographic process can be achieved only when the process is carried out on a substantially flat surface.
- a CMP apparatus comprising: an enclosure; a platen disposed within the enclosure, wherein the platen consists of a central, circular-shaped segment and a peripheral, annular-shaped segment encircling the central, circular-shaped segment with a gap therebetween; a carrier for holding and rotating a wafer; a first polishing pad mounted on the central, circular-shaped segment; and a second polishing pad mounted on the peripheral, annular-shaped segment.
- a first nozzle is provided for supplying a first slurry onto the first polishing pad.
- a second nozzle is provided for supplying a second slurry onto the second polishing pad. The first slurry and the second slurry may be supplied at different flow rates.
- FIG. 1 is a schematic diagram showing a conventional CMP polishing unit
- FIG. 2 is a schematic, cross-sectional diagram illustrating a CMP apparatus in accordance with one embodiment of this invention.
- FIG. 3 is a schematic plan view showing the relative position of the polished wafer and the polishing pads in accordance with one embodiment of this invention.
- FIG. 2 is a schematic, cross-sectional diagram illustrating a CMP apparatus in accordance with one embodiment of this invention.
- the CMP apparatus 10 comprises an enclosure 100 , a platen 110 disposed within the enclosure 100 , and a carrier 220 for holding and rotating a wafer 222 .
- the platen 110 is connected to a shaft 101 for rotating the platen 110 about its central axis during polishing.
- the platen 110 consists of a central, circular-shaped segment 110 a and a peripheral, annular-shaped segment 110 b encircling the central, circular-shaped segment 110 a with a gap 113 therebetween.
- the central, circular-shaped segment 110 a and the peripheral, annular-shaped segment 110 b are concentric.
- the gap 113 has a width d of about 0.5-5 mm.
- a first polishing pad 112 a is mounted on the central, circular-shaped segment 110 a.
- a second polishing pad 112 b is mounted on the peripheral, annular-shaped segment 110 b.
- the material used for the first polishing pad 112 a and the material used for the second polishing pad 112 b may be the same or different.
- a first slurry S 1 is provided onto the first polishing pad 112 a via a first nozzle 230 a.
- a second slurry S 2 is provided onto the second polishing pad 112 b via a second nozzle 230 b.
- the flow rate and the concentration settings of the first slurry S 1 and the flow rate and the concentration settings of the second slurry S 2 may be the same or different.
- FIG. 3 is a schematic plan view showing the relative position of the polished wafer and the polishing pads in accordance with one embodiment of this invention.
- the central, circular-shaped segment 110 a and the peripheral, annular-shaped segment 110 b rotate in the same direction 150 , for example, both in counter-clockwise direction, but at different rotation speeds.
- the rotation speed of the peripheral, annular-shaped segment 110 b is slower than that of the central, circular-shaped segment 110 a.
- a differential gear (not shown) may be installed to provide such different rotation speeds.
- the rotating wafer 222 which is rotated, for example, in a direction 250 opposite to the direction 150 , is pressed against the first and second polishing pads 112 a and 112 b by the carrier 220 to cause relative movement between the polishing surfaces of the first and second polishing pads 112 a and 112 b and the wafer 222 .
- the location of the carrier 220 is adjustable along the direction 260 .
- the carrier 220 rotates between the first and second polishing pads 112 a and 112 b, such that an annular edge region E of the wafer 222 is in direct contact with the second polishing pad 112 b.
- the surface area of the annular edge region E is about one-third of the total surface area of the wafer 222 .
Abstract
A CMP apparatus includes an enclosure; a platen disposed within the enclosure, and a carrier for holding and rotating a wafer. The platen consists of a central, circular-shaped segment and a peripheral, annular-shaped segment with a gap formed therebetween. A first polishing pad is mounted on the central, circular-shaped segment. A second polishing pad is mounted on the peripheral, annular-shaped segment. In polishing, the carrier rotates between the first and second polishing pads, such that an annular edge region of the wafer is in direct contact with the second polishing pad.
Description
- 1. Field of the Invention
- The present invention relates generally to the field of chemical mechanical polishing or chemical mechanical planarization (CMP) techniques. More particularly, the present invention relates to an improved CMP apparatus and a CMP method capable of precisely controlling the polishing uniformity in the CMP process.
- 2. Description of the Prior Art
- As known in the art, mechanical polishing or chemical mechanical planarization (CMP) is essential to the semiconductor fabrication to achieve a high degree of planarity on the surface of a semiconductor wafer. In a CMP process, the wafer is typically pressed against a rotating polishing pad. The wafer may rotate and oscillate over the surface of the polishing pad covered with slurry to improve polishing effectiveness.
-
FIG. 1 illustrates a conventional CMP polishing unit. As shown inFIG. 1 , theCMP polishing unit 30 may comprise aplaten 300 connected to ashaft 301 for rotating theplaten 300 about its central axis during polishing. Apolishing pad 310 is mounted on theplaten 300. Awafer 322 is held and rotated by acarrier 320. In polishing, slurry is sprayed onto thepolishing pad 310 by aslurry feeding device 330. The rotatingwafer 322 is pressed against thepolishing pad 310 by thecarrier 320 to cause relative movement between the polishing surface of thepolishing pad 310 and thewafer 322, thereby producing a combined mechanical and chemical effect on the surface of the wafer. Thepolishing pad 310 is typically made several times the diameter of thewafer 322. Thewafer 322 is kept off-center on the rotatingpolishing pad 310 during the polishing process. - One problem associated with the conventional CMP techniques is the difficulty in controlling polishing rates at different locations on a wafer surface. Since the polishing rate applied to a wafer surface is generally proportional to the relative rotational velocity of the polishing pad, the polishing rate at a specific point on the wafer surface depends on the distance from the axis of rotation. It is desirable to control the uniformity in the CMP process because it enables the subsequent use of a high-resolution lithographic process to fabricate the next level circuit. The accuracy of a high resolution lithographic process can be achieved only when the process is carried out on a substantially flat surface.
- It is one object of the present invention to provide an improved CMP apparatus in order to solve the above-described problems.
- To these ends, according to one aspect of the present invention, there is provided a CMP apparatus comprising: an enclosure; a platen disposed within the enclosure, wherein the platen consists of a central, circular-shaped segment and a peripheral, annular-shaped segment encircling the central, circular-shaped segment with a gap therebetween; a carrier for holding and rotating a wafer; a first polishing pad mounted on the central, circular-shaped segment; and a second polishing pad mounted on the peripheral, annular-shaped segment. A first nozzle is provided for supplying a first slurry onto the first polishing pad. A second nozzle is provided for supplying a second slurry onto the second polishing pad. The first slurry and the second slurry may be supplied at different flow rates.
- These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings:
-
FIG. 1 is a schematic diagram showing a conventional CMP polishing unit; -
FIG. 2 is a schematic, cross-sectional diagram illustrating a CMP apparatus in accordance with one embodiment of this invention; and -
FIG. 3 is a schematic plan view showing the relative position of the polished wafer and the polishing pads in accordance with one embodiment of this invention. - It should be noted that all the figures are diagrammatic. Relative dimensions and proportions of parts of the drawings have been shown exaggerated or reduced in size, for the sake of clarity and convenience in the drawings. The same reference signs are generally used to refer to corresponding or similar features in modified and different embodiments.
- In the following description, numerous specific details are given to provide a thorough understanding of the invention. However, it will be apparent to one skilled in the art that the invention may be practiced without these specific details. In order to avoid obscuring the present invention, some well-known system configurations and process steps are not disclosed in detail.
- Likewise, the drawings showing embodiments of the apparatus are semi-diagrammatic and not to scale and, particularly, some of the dimensions are for the clarity of presentation and are shown exaggerated in the figures. Also, where multiple embodiments are disclosed and described having some features in common, for clarity and ease of illustration and description thereof like or similar features one to another will ordinarily be described with like reference numerals.
-
FIG. 2 is a schematic, cross-sectional diagram illustrating a CMP apparatus in accordance with one embodiment of this invention. As shown inFIG. 2 , theCMP apparatus 10 comprises anenclosure 100, aplaten 110 disposed within theenclosure 100, and acarrier 220 for holding and rotating awafer 222. Theplaten 110 is connected to ashaft 101 for rotating theplaten 110 about its central axis during polishing. According to one embodiment of the invention, theplaten 110 consists of a central, circular-shaped segment 110 a and a peripheral, annular-shaped segment 110 b encircling the central, circular-shaped segment 110 a with agap 113 therebetween. The central, circular-shaped segment 110 a and the peripheral, annular-shaped segment 110 b are concentric. According to the embodiment of this invention, thegap 113 has a width d of about 0.5-5 mm. - A
first polishing pad 112 a is mounted on the central, circular-shaped segment 110 a. Asecond polishing pad 112 b is mounted on the peripheral, annular-shaped segment 110 b. The material used for thefirst polishing pad 112 a and the material used for thesecond polishing pad 112 b may be the same or different. A first slurry S1 is provided onto thefirst polishing pad 112 a via afirst nozzle 230 a. A second slurry S2 is provided onto thesecond polishing pad 112 b via asecond nozzle 230 b. The flow rate and the concentration settings of the first slurry S1 and the flow rate and the concentration settings of the second slurry S2 may be the same or different. -
FIG. 3 is a schematic plan view showing the relative position of the polished wafer and the polishing pads in accordance with one embodiment of this invention. As shown inFIG. 3 , the central, circular-shaped segment 110 a and the peripheral, annular-shaped segment 110 b rotate in thesame direction 150, for example, both in counter-clockwise direction, but at different rotation speeds. According to the embodiment of this invention, the rotation speed of the peripheral, annular-shaped segment 110 b is slower than that of the central, circular-shaped segment 110 a. A differential gear (not shown) may be installed to provide such different rotation speeds. - In polishing, the rotating
wafer 222, which is rotated, for example, in adirection 250 opposite to thedirection 150, is pressed against the first andsecond polishing pads carrier 220 to cause relative movement between the polishing surfaces of the first andsecond polishing pads wafer 222. According to the embodiment of this invention, the location of thecarrier 220 is adjustable along thedirection 260. According to the embodiment of this invention, thecarrier 220 rotates between the first andsecond polishing pads wafer 222 is in direct contact with thesecond polishing pad 112 b. Preferably, the surface area of the annular edge region E is about one-third of the total surface area of thewafer 222. - Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention.
Claims (10)
1. A CMP apparatus, comprising:
an enclosure;
a platen disposed within the enclosure, wherein the platen consists of a central, circular-shaped segment and a peripheral, annular-shaped segment encircling the central, circular-shaped segment with a gap therebetween;
a carrier for holding and rotating a wafer;
a first polishing pad mounted on the central, circular-shaped segment; and
a second polishing pad mounted on the peripheral, annular-shaped segment.
2. The CMP apparatus according to claim 1 further comprising:
a first nozzle for supplying a first slurry onto the first polishing pad; and
a second nozzle for supplying a second slurry onto the second polishing pad.
3. The CMP apparatus according to claim 2 wherein the first slurry and the second slurry are supplied at different flow rates.
4. The CMP apparatus according to claim 2 wherein the first slurry and the second slurry have different concentration settings.
5. The CMP apparatus according to claim 1 wherein the gap has a width d of about 0.5-5 mm.
6. The CMP apparatus according to claim 1 wherein the central, circular-shaped segment and the peripheral, annular-shaped segment rotate in the same direction.
7. The CMP apparatus according to claim 1 wherein the central, circular-shaped segment and the peripheral, annular-shaped segment rotate at different rotation speeds.
8. The CMP apparatus according to claim 7 wherein the rotation speed of the peripheral, annular-shaped segment is slower than that of the central, circular-shaped segment.
9. The CMP apparatus according to claim 1 wherein in polishing the carrier rotates between the first and second polishing pads, such that an annular edge region of the wafer is in direct contact with the second polishing pad.
10. The CMP apparatus according to claim 9 wherein a surface area of the annular edge region is about one-third of a total surface area of the wafer.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/106,871 US20120289131A1 (en) | 2011-05-13 | 2011-05-13 | Cmp apparatus and method |
TW100121446A TWI505345B (en) | 2011-05-13 | 2011-06-20 | Cmp apparatus and method |
CN2011102883138A CN102773789A (en) | 2011-05-13 | 2011-09-23 | CMP apparatus and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/106,871 US20120289131A1 (en) | 2011-05-13 | 2011-05-13 | Cmp apparatus and method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20120289131A1 true US20120289131A1 (en) | 2012-11-15 |
Family
ID=47119011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/106,871 Abandoned US20120289131A1 (en) | 2011-05-13 | 2011-05-13 | Cmp apparatus and method |
Country Status (3)
Country | Link |
---|---|
US (1) | US20120289131A1 (en) |
CN (1) | CN102773789A (en) |
TW (1) | TWI505345B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210268624A1 (en) * | 2017-11-14 | 2021-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Monolithic platen |
CN114227527A (en) * | 2020-09-09 | 2022-03-25 | 中国科学院微电子研究所 | Grinding reagent and preparation method thereof, and chemical mechanical grinding method and device thereof |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9305851B2 (en) * | 2013-11-19 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for chemical mechanical planarization with fluorescence detection |
KR20210008276A (en) * | 2019-07-12 | 2021-01-21 | 삼성디스플레이 주식회사 | Chemical mechanical polishing apparatus, Chemical mechanical polishing method and Method of manufacturing display apparatus using the same |
Citations (13)
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US5650039A (en) * | 1994-03-02 | 1997-07-22 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved slurry distribution |
US5658185A (en) * | 1995-10-25 | 1997-08-19 | International Business Machines Corporation | Chemical-mechanical polishing apparatus with slurry removal system and method |
US5690540A (en) * | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5972162A (en) * | 1998-01-06 | 1999-10-26 | Speedfam Corporation | Wafer polishing with improved end point detection |
US5984769A (en) * | 1997-05-15 | 1999-11-16 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US6015337A (en) * | 1995-07-20 | 2000-01-18 | Ebara Corporation | Polishing apparatus |
US6152806A (en) * | 1998-12-14 | 2000-11-28 | Applied Materials, Inc. | Concentric platens |
US6284092B1 (en) * | 1999-08-06 | 2001-09-04 | International Business Machines Corporation | CMP slurry atomization slurry dispense system |
US6663472B2 (en) * | 2002-02-01 | 2003-12-16 | Chartered Semiconductor Manufacturing Ltd. | Multiple step CMP polishing |
US6736709B1 (en) * | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
US7452264B2 (en) * | 2006-06-27 | 2008-11-18 | Applied Materials, Inc. | Pad cleaning method |
US20100015894A1 (en) * | 2008-07-17 | 2010-01-21 | Ming-Che Ho | CMP by Controlling Polish Temperature |
US8398461B2 (en) * | 2009-07-20 | 2013-03-19 | Iv Technologies Co., Ltd. | Polishing method, polishing pad and polishing system |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3979750B2 (en) * | 1998-11-06 | 2007-09-19 | 株式会社荏原製作所 | Substrate polishing equipment |
AU4058400A (en) * | 1999-04-02 | 2000-10-23 | Engis Corporation | Modular controlled platen preparation system and method |
JP3291488B2 (en) * | 1999-05-27 | 2002-06-10 | 三洋電機株式会社 | Fluid removal method |
-
2011
- 2011-05-13 US US13/106,871 patent/US20120289131A1/en not_active Abandoned
- 2011-06-20 TW TW100121446A patent/TWI505345B/en active
- 2011-09-23 CN CN2011102883138A patent/CN102773789A/en active Pending
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5650039A (en) * | 1994-03-02 | 1997-07-22 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved slurry distribution |
US6015337A (en) * | 1995-07-20 | 2000-01-18 | Ebara Corporation | Polishing apparatus |
US5658185A (en) * | 1995-10-25 | 1997-08-19 | International Business Machines Corporation | Chemical-mechanical polishing apparatus with slurry removal system and method |
US5690540A (en) * | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5984769A (en) * | 1997-05-15 | 1999-11-16 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US5972162A (en) * | 1998-01-06 | 1999-10-26 | Speedfam Corporation | Wafer polishing with improved end point detection |
US6152806A (en) * | 1998-12-14 | 2000-11-28 | Applied Materials, Inc. | Concentric platens |
US6284092B1 (en) * | 1999-08-06 | 2001-09-04 | International Business Machines Corporation | CMP slurry atomization slurry dispense system |
US6736709B1 (en) * | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
US6663472B2 (en) * | 2002-02-01 | 2003-12-16 | Chartered Semiconductor Manufacturing Ltd. | Multiple step CMP polishing |
US7452264B2 (en) * | 2006-06-27 | 2008-11-18 | Applied Materials, Inc. | Pad cleaning method |
US20100015894A1 (en) * | 2008-07-17 | 2010-01-21 | Ming-Che Ho | CMP by Controlling Polish Temperature |
US8398461B2 (en) * | 2009-07-20 | 2013-03-19 | Iv Technologies Co., Ltd. | Polishing method, polishing pad and polishing system |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210268624A1 (en) * | 2017-11-14 | 2021-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Monolithic platen |
US11919126B2 (en) * | 2017-11-14 | 2024-03-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Monolithic platen |
CN114227527A (en) * | 2020-09-09 | 2022-03-25 | 中国科学院微电子研究所 | Grinding reagent and preparation method thereof, and chemical mechanical grinding method and device thereof |
Also Published As
Publication number | Publication date |
---|---|
CN102773789A (en) | 2012-11-14 |
TWI505345B (en) | 2015-10-21 |
TW201246339A (en) | 2012-11-16 |
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Legal Events
Date | Code | Title | Description |
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AS | Assignment |
Owner name: NANYA TECHNOLOGY CORP., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIU, LI-CHUNG;CHEN, YI-NAN;LIU, HSIEN-WEN;REEL/FRAME:026273/0209 Effective date: 20110510 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |