US20140027894A1 - Resin molded semiconductor device and manufacturing method thereof - Google Patents
Resin molded semiconductor device and manufacturing method thereof Download PDFInfo
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- US20140027894A1 US20140027894A1 US14/040,211 US201314040211A US2014027894A1 US 20140027894 A1 US20140027894 A1 US 20140027894A1 US 201314040211 A US201314040211 A US 201314040211A US 2014027894 A1 US2014027894 A1 US 2014027894A1
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- resin
- semiconductor device
- resin molded
- lead frame
- lead
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- This invention relates to a resin molded semiconductor device and its manufacturing method.
- a lead frame is prepared, each of various kinds of semiconductor dice, a passive element or the like is die-bonded to the lead frame with solder, silver paste or the like, the semiconductor die or the like and the lead frame are electrically connected by wire-bonding or the like through an aluminum wire or a gold wire, and then the semiconductor device is completed by resin-molding the lead frame excluding outer lead portions, followed by cutting a tie bar and folding the leads or the like as required.
- an unnecessary resin film 104 is inevitably formed in a region surrounded by a resin package 101 that is filled with the resin, outer leads 102 and a tie bar 103 as shown in FIG. 4 at a completion of a resin-molding process step, as a result of the resin molding method.
- a resin leakage portion 105 as shown in FIG. 4 is usually not formed on a surface of the tie bar 103 or the outer lead 102 .
- the tie bar 103 which is formed between the outer leads 102 and serves to hold the outer leads 102 until the resin-molding process step is completed, also serves as a dam bar 109 as shown in FIG. 5 and FIG. 6 to block and prevent the injected resin from leaking out of the resin package 101 .
- the injected resin neither leaks out of the dam bar 109 nor forms the resin leakage portion 105 on the surface of the tie bar 103 or the outer lead 102 outside the resin package 101 , although the injected resin forms the unnecessary resin film 104 in the region surrounded by the resin package 101 , the outer leads 102 and the dam bar 109 , i.e. the tie bar 103 .
- the lead frame 107 that is formed by punching has burrs 111 consisting of fine projections and depressions on its surface as shown in
- FIG. 7B that is an enlarged view of a portion marked with a dashed line circle in FIG. 7A .
- the resin film 104 formed in the region surrounded by the resin package 101 , the outer leads 102 and the tie bar 103 can be relatively easily removed by sandblasting, air showering or the like and that the resin leakage portion 105 sticking firmly to the outer leads 102 and the like can be not easily removed by the means mentioned above.
- the invention provides a method of manufacturing a resin molded semiconductor device.
- the method includes providing a lead frame comprising an island, bonding a semiconductor die on the island of the lead frame, electrically connecting the semiconductor die to the lead frame, resin-molding the lead frame on which the semiconductor die is bonded while clamping the lead frame with a mold so as to apply a clamping pressure to a region of the lead frame, and applying a compressive pressure to the region of the lead frame prior to the resin-molding.
- the compressive pressure being greater than the clamping pressure.
- the invention also provides a resin molded semiconductor device that includes a lead frame, a semiconductor die bonded to the lead frame and electrically connected to the lead frame, and a resin package housing the lead frame and the semiconductor die.
- the lead frame including a dent portion extending from inside the resin package to outside the resin package, and the surface roughness of the dent portion is smaller than the surface roughness of the lead frame not having the dent portion.
- FIGS. 1A and 1B are oblique perspective figures showing a lead frame after burrs on the lead frame are flattened by a method of manufacturing a resin molded semiconductor device according to an embodiment of this invention.
- FIG. 2A is a plan view showing the method of manufacturing the resin molded semiconductor device according the embodiment of this invention.
- FIG. 2B is a cross-sectional view showing a section A-A in FIG. 2A .
- FIGS. 3A and 3B are cross-sectional views showing a process step of applying a compressive pressure to flatten the burrs on the lead frame in the method of manufacturing the resin molded semiconductor device according to the embodiment of this invention.
- FIG. 4 is a plan view showing a method of manufacturing a resin molded semiconductor device according a prior art.
- FIG. 5 is a cross-sectional view showing a state of resin-molding in a resin-molding process step.
- FIG. 6 is a perspective plan view looked from above an upper mold, showing a state in which dam bars prevent the resin injected into the resin molded device from flowing beyond an intended region.
- FIGS. 7A and 7B are oblique perspective figures showing the burrs on the lead frame formed by punching.
- SIP Single In-line Package
- FIGS. 1A , 1 B, 2 A and 2 B An embodiment of this invention is explained referring to FIGS. 1A , 1 B, 2 A and 2 B.
- a lead frame 1 as shown in FIG. 1A , which is identical to the lead frame 107 described above and shown in FIG. 7A .
- the lead frame 1 has burrs consisting of fine projections and depressions on its surface derived from punching, which are identical to the burrs 111 as shown in FIG. 7B .
- the resin leakage portion 105 would be caused as in the prior art, if the resin-molding is performed without any countermeasures.
- the projections and depression of the burrs 111 are very fine, they are flattened by the clamping pressure of the mold and cause no problem even when the resin-molding is performed without any countermeasures. In some cases, however, the resin leakage portion 105 is formed due to variations in the projections and depressions of the burrs 111 , variations in the clamping pressure of the mold in the resin-molding process step, a lack of clamping pressure when a mold for a single row frame is used in place of a mold for a triple row frame or the like.
- a feature of this invention is that the resin leakage portion 105 is prevented from occurring by flattening prior to the resin-molding process step the projections and depressions of the burrs on the lead frame 1 , which are identical to the burrs 111 as shown in FIG. 7B .
- the process step is usually performed before a semiconductor die 9 is bonded to the lead frame 1 .
- the compressive pressure that is larger than the clamping pressure applied in the resin-molding process step is applied in directions indicated by upward and downward arrows in FIG. 3A to a region larger than a region of the lead frame 1 including the tie bar 3 to which the clamping pressure is applied by the mold in the resin-molding process step.
- the burrs on the lead frame 1 caused by the punching which are identical to the burrs 111 consisting of the projections and depressions as shown in FIG. 7B , are flattened as shown in FIG. 1B , that is an enlarged view of a portion marked with a dashed line circle in FIG. 1A , by applying the compressive pressure.
- the burrs in the region to which the clamping pressure is to be applied by the molds in the resin-molding process step are turned into flattened burrs 6 .
- the semiconductor die 9 is bonded to the lead frame 1 and electrically connected with the lead frame 1 through a bonding wire 10 before the resin-molding is performed.
- the resin leakage portion 105 as shown in FIG. 4 is not formed on the surface of the outer lead 2 or the tie bar 3 clamped by the molds in the resin-molding process step as shown in FIG. 2A .
- an unnecessary resin film 4 is formed in a region surrounded by the resin package 5 , the outer leads 2 and the tie bar 3 , it can be removed by sandblasting or the like to prevent the problems from occurring as described above.
- tie bar 3 is cut and the outer leads 2 are folded as required to complete the desired resin molded semiconductor device.
- FIG. 3B is an enlarged view of a portion marked with a dashed line circle in FIG. 3A .
- a shallow dent 8 is formed in the lead frame 1 in a region pressed by the upper plate 112 .
- the step 7 at one end of the dent 8 is sealed inside the resin package 5 , as shown in FIG. 2B that is a cross-sectional view of a section A-A in FIG. 2A .
- the lead frame 1 used in it is as thick as 0.5 mm, which makes the dent 8 relatively deep.
- the step 7 of the dent 8 inside the resin package 5 serves to anchor the lead frame 1 so that the outer lead 2 does not easily come off when an external force is applied to the outer lead 2 , an island 11 or the like is prevented from being affected by the external force, and the semiconductor die 9 , the bonding wire 10 and the like inside the resin package 5 are protected.
- the lead frame 1 is as thin as around 0.2 mm in the case of a semiconductor device of medium electrical conductivity and having a small or medium number of pins, and a little thicker than 0.1 mm in the case of a semiconductor device having a large number of pins, introducing the process step to apply the compressive pressure forms on the pressed surface of the lead frame 1 the dent 8 that is not deep enough to serve as the anchor.
- the lower plate 113 shown in FIG. 3A is provided with a dent while the upper plate 112 is provided with a projection that fits the dent in the lower plate 113 .
- the lead frame 1 is placed on the lower plate 113 and firmly pressed by the upper plate 112 to form the dent 8 made of a step larger than the thickness of the lead frame 1 and small enough to be housed in the resin package 5 so that the dent 8 may serve as an anchor effectively.
- the dent 8 as described above may be formed in the case of the thick lead frame used in the semiconductor device of high electrical conductivity.
- the resin leakage portion 105 is not formed on the surface of the outer lead 102 or the like in the resin-molding process step. As a result, there is no such case that the resin leakage portion 105 flakes off in subsequent process step such as folding the leads to make dust.
Abstract
This invention is directed to provide a method of manufacturing a resin molded semiconductor device with high reliability by preventing a resin leakage portion from occurring due to burrs on a lead frame formed by punching. The method of manufacturing the resin molded semiconductor device according to the invention includes bonding a semiconductor die on an island in a lead frame, electrically connecting the semiconductor die with the lead frame, resin-molding the lead frame on which the semiconductor die is bonded, and applying prior to the resin-molding a compressive pressure that is higher than a clamping pressure applied in the resin-molding to a region of the lead frame being clamped by molds in the resin-molding of the lead frame.
Description
- This application claims priority from Japanese Patent Application No. 2008-220982, the content of which is incorporated herein by reference in its entirety.
- 1. Field of the Invention
- This invention relates to a resin molded semiconductor device and its manufacturing method.
- 2. Description of the Related Art
- To manufacture a resin molded semiconductor device, a lead frame is prepared, each of various kinds of semiconductor dice, a passive element or the like is die-bonded to the lead frame with solder, silver paste or the like, the semiconductor die or the like and the lead frame are electrically connected by wire-bonding or the like through an aluminum wire or a gold wire, and then the semiconductor device is completed by resin-molding the lead frame excluding outer lead portions, followed by cutting a tie bar and folding the leads or the like as required.
- The assembly process of the resin molded semiconductor device as mentioned above is described, for example in “All about Leading Edge Packaging Technologies—with Illustrations” edited by Handotai Shingijutsu Kenkyukai, Sep. 25, 2007, published by Kogyo Chosakai Publishing Co., Ltd.
- In the assembly process of the resin molded semiconductor device as described above, an
unnecessary resin film 104 is inevitably formed in a region surrounded by aresin package 101 that is filled with the resin,outer leads 102 and atie bar 103 as shown inFIG. 4 at a completion of a resin-molding process step, as a result of the resin molding method. However, aresin leakage portion 105 as shown inFIG. 4 is usually not formed on a surface of thetie bar 103 or theouter lead 102. It is because resin injection in the resin-molding is carried out while anupper mold 115 and alower mold 106 apply a high pressure to alead frame 107 which bears a semiconductor die 108 bonded thereon and electrically connected with the semiconductor die 108 through abonding wire 110 or the like as shown inFIG. 5 so that the resin does not leak. In this case, thetie bar 103, which is formed between theouter leads 102 and serves to hold theouter leads 102 until the resin-molding process step is completed, also serves as adam bar 109 as shown inFIG. 5 andFIG. 6 to block and prevent the injected resin from leaking out of theresin package 101. Therefore, the injected resin neither leaks out of thedam bar 109 nor forms theresin leakage portion 105 on the surface of thetie bar 103 or theouter lead 102 outside theresin package 101, although the injected resin forms theunnecessary resin film 104 in the region surrounded by theresin package 101, theouter leads 102 and thedam bar 109, i.e. thetie bar 103. - However, what is stated above holds true only when the surfaces of the
lead frame 107 have flatness and are firmly and tightly pressed against theupper mold 115 and thelower mold 106 in the resin-molding process step. In reality, however, thelead frame 107 that is formed by punching hasburrs 111 consisting of fine projections and depressions on its surface as shown in -
FIG. 7B that is an enlarged view of a portion marked with a dashed line circle inFIG. 7A . Thus there are caused very narrow gaps between the lead frame and the mold in some cases, even when thelead frame 107 is pressed by theupper mold 115 and thelower mold 106 from above and below. As a result, the resin leaks through the gaps to form theresin leakage portion 105 made of thin resin film on the surfaces of thetie bar 103 and theouter leads 102 as shown inFIG. 4 . Theresin leakage portion 105 flakes off in a subsequent process step such as folding the leads to make dust that causes problems in yield and reliability. - It should be noted that the
resin film 104 formed in the region surrounded by theresin package 101, theouter leads 102 and thetie bar 103 can be relatively easily removed by sandblasting, air showering or the like and that theresin leakage portion 105 sticking firmly to theouter leads 102 and the like can be not easily removed by the means mentioned above. - The invention provides a method of manufacturing a resin molded semiconductor device. The method includes providing a lead frame comprising an island, bonding a semiconductor die on the island of the lead frame, electrically connecting the semiconductor die to the lead frame, resin-molding the lead frame on which the semiconductor die is bonded while clamping the lead frame with a mold so as to apply a clamping pressure to a region of the lead frame, and applying a compressive pressure to the region of the lead frame prior to the resin-molding. The compressive pressure being greater than the clamping pressure.
- The invention also provides a resin molded semiconductor device that includes a lead frame, a semiconductor die bonded to the lead frame and electrically connected to the lead frame, and a resin package housing the lead frame and the semiconductor die. The lead frame including a dent portion extending from inside the resin package to outside the resin package, and the surface roughness of the dent portion is smaller than the surface roughness of the lead frame not having the dent portion.
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FIGS. 1A and 1B are oblique perspective figures showing a lead frame after burrs on the lead frame are flattened by a method of manufacturing a resin molded semiconductor device according to an embodiment of this invention. -
FIG. 2A is a plan view showing the method of manufacturing the resin molded semiconductor device according the embodiment of this invention.FIG. 2B is a cross-sectional view showing a section A-A inFIG. 2A . -
FIGS. 3A and 3B are cross-sectional views showing a process step of applying a compressive pressure to flatten the burrs on the lead frame in the method of manufacturing the resin molded semiconductor device according to the embodiment of this invention. -
FIG. 4 is a plan view showing a method of manufacturing a resin molded semiconductor device according a prior art. -
FIG. 5 is a cross-sectional view showing a state of resin-molding in a resin-molding process step. -
FIG. 6 is a perspective plan view looked from above an upper mold, showing a state in which dam bars prevent the resin injected into the resin molded device from flowing beyond an intended region. -
FIGS. 7A and 7B are oblique perspective figures showing the burrs on the lead frame formed by punching. - An embodiment of this invention is hereafter described referring to the drawings.
- A portion of an SIP (Single In-line Package) is shown in the drawings and described since it is sufficient for understanding features of this invention that an
outer leads 2 exposed out of aresin package 5, atie bar 3 and a lower edge of theresin package 5 are shown and explained. - An embodiment of this invention is explained referring to
FIGS. 1A , 1B, 2A and 2B. First, there is provided alead frame 1 as shown inFIG. 1A , which is identical to thelead frame 107 described above and shown inFIG. 7A . Thelead frame 1 has burrs consisting of fine projections and depressions on its surface derived from punching, which are identical to theburrs 111 as shown inFIG. 7B . Thus, theresin leakage portion 105 would be caused as in the prior art, if the resin-molding is performed without any countermeasures. - Because the projections and depression of the
burrs 111 are very fine, they are flattened by the clamping pressure of the mold and cause no problem even when the resin-molding is performed without any countermeasures. In some cases, however, theresin leakage portion 105 is formed due to variations in the projections and depressions of theburrs 111, variations in the clamping pressure of the mold in the resin-molding process step, a lack of clamping pressure when a mold for a single row frame is used in place of a mold for a triple row frame or the like. - A feature of this invention is that the
resin leakage portion 105 is prevented from occurring by flattening prior to the resin-molding process step the projections and depressions of the burrs on thelead frame 1, which are identical to theburrs 111 as shown inFIG. 7B . There is introduced a process step to apply a compressive pressure to thelead frame 1, as shown inFIG. 3A . The process step is usually performed before asemiconductor die 9 is bonded to thelead frame 1. In the process step to apply the compressive pressure, the compressive pressure that is larger than the clamping pressure applied in the resin-molding process step is applied in directions indicated by upward and downward arrows inFIG. 3A to a region larger than a region of thelead frame 1 including thetie bar 3 to which the clamping pressure is applied by the mold in the resin-molding process step. - The burrs on the
lead frame 1 caused by the punching, which are identical to theburrs 111 consisting of the projections and depressions as shown inFIG. 7B , are flattened as shown inFIG. 1B , that is an enlarged view of a portion marked with a dashed line circle inFIG. 1A , by applying the compressive pressure. As a result, the burrs in the region to which the clamping pressure is to be applied by the molds in the resin-molding process step are turned into flattenedburrs 6. After that, the semiconductor die 9 is bonded to thelead frame 1 and electrically connected with thelead frame 1 through abonding wire 10 before the resin-molding is performed. - Since the fine burrs on the
lead frame 1 are turned into the flattenedburrs 6 in the process step to apply the compressive pressure to thelead frame 1, theresin leakage portion 105 as shown inFIG. 4 is not formed on the surface of theouter lead 2 or thetie bar 3 clamped by the molds in the resin-molding process step as shown inFIG. 2A . Although anunnecessary resin film 4 is formed in a region surrounded by theresin package 5, the outer leads 2 and thetie bar 3, it can be removed by sandblasting or the like to prevent the problems from occurring as described above. - After that,
tie bar 3 is cut and the outer leads 2 are folded as required to complete the desired resin molded semiconductor device. - By introducing the process step to apply the compressive pressure to the
lead frame 1, it is made possible to form asmall step 7 on thelead frame 1 at a location interposed between and crushed by anupper plate 112 and alower plate 113 as shown inFIG. 3B that is an enlarged view of a portion marked with a dashed line circle inFIG. 3A . As a result, ashallow dent 8 is formed in thelead frame 1 in a region pressed by theupper plate 112. Thestep 7 at one end of thedent 8 is sealed inside theresin package 5, as shown inFIG. 2B that is a cross-sectional view of a section A-A inFIG. 2A . - In the case of a semiconductor device of high electrical conductivity such as a power device, the
lead frame 1 used in it is as thick as 0.5 mm, which makes thedent 8 relatively deep. - Thus the
step 7 of thedent 8 inside theresin package 5 serves to anchor thelead frame 1 so that theouter lead 2 does not easily come off when an external force is applied to theouter lead 2, anisland 11 or the like is prevented from being affected by the external force, and the semiconductor die 9, thebonding wire 10 and the like inside theresin package 5 are protected. However, since thelead frame 1 is as thin as around 0.2 mm in the case of a semiconductor device of medium electrical conductivity and having a small or medium number of pins, and a little thicker than 0.1 mm in the case of a semiconductor device having a large number of pins, introducing the process step to apply the compressive pressure forms on the pressed surface of thelead frame 1 thedent 8 that is not deep enough to serve as the anchor. - In this case, the
lower plate 113 shown inFIG. 3A is provided with a dent while theupper plate 112 is provided with a projection that fits the dent in thelower plate 113. Then thelead frame 1 is placed on thelower plate 113 and firmly pressed by theupper plate 112 to form thedent 8 made of a step larger than the thickness of thelead frame 1 and small enough to be housed in theresin package 5 so that thedent 8 may serve as an anchor effectively. Thedent 8 as described above may be formed in the case of the thick lead frame used in the semiconductor device of high electrical conductivity. - Although the SIP is described in the embodiment, this invention may be applied to other packages such as a QFP (Quad Flat Package) within the scope of the invention.
- According to the embodiment of this invention, the
resin leakage portion 105 is not formed on the surface of theouter lead 102 or the like in the resin-molding process step. As a result, there is no such case that theresin leakage portion 105 flakes off in subsequent process step such as folding the leads to make dust.
Claims (21)
1-3. (canceled)
4. A resin molded semiconductor device, comprising:
a semiconductor die;
a lead; and
a resin package in which the semiconductor die and part of the lead are embedded,
wherein the lead comprises a dent portion which extends from inside the resin package to outside the resin package and is formed on a top side of the lead, the top side being the same side as the side of the lead on which the semiconductor die is disposed.
5. The resin molded semiconductor device of claim 4 , wherein a surface roughness of the dent portion is smaller than a surface roughness of the lead not having the dent portion.
6. The resin molded semiconductor device of claim 4 , wherein burrs of the dent portion is smaller than burrs of the lead not having the dent portion.
7. The resin molded semiconductor device of claim 4 , further comprising a wire that is bonded to the lead at a position of the lead that is closer to the semiconductor die than to the dent potion.
8. The resin molded semiconductor device of claim 4 , wherein the device is part of a single in-line package.
9. The resin molded semiconductor device of claim 4 , wherein the device is part of a quad flat package.
10. The resin molded semiconductor device of claim 4 , wherein the semiconductor die comprises a high electrical conductivity device.
11. The resin molded semiconductor device of claim 10 , wherein the high electrical conductivity device is a power device.
12. The resin molded semiconductor device of claim 4 , wherein a thickness of the lead is 0.2 to 0.5 mm.
13. The resin molded semiconductor device of claim 4 , wherein the semiconductor die comprises a medium electrical conductivity device.
14. A resin molded semiconductor device, comprising:
a lead comprising a first portion and a second portion; and
a resin package in which part of the lead is embedded,
wherein a surface roughness of the first portion is smaller than a surface roughness of the second portion.
15. The resin molded semiconductor device of claim 14 , wherein the first portion is a dent in the lead.
16. The resin molded semiconductor device of claim 14 , wherein burrs of the first portion is smaller than burrs of the second portion.
17. The resin molded semiconductor device of claim 14 , further comprising a wire that is bonded to the lead at a position of the lead that is closer to the semiconductor die than to the first potion.
18. The resin molded semiconductor device of claim 14 , wherein the device is part of a single in-line package.
19. The resin molded semiconductor device of claim 4 , wherein the device is part of a quad flat package.
20. The resin molded semiconductor device of claim 14 , wherein the semiconductor die comprises a high electrical conductivity device.
21. The resin molded semiconductor device of claim 20 , wherein the high electrical conductivity device is a power device.
22. The resin molded semiconductor device of claim 14 , wherein a thickness of the lead is 0.2 to 0.5 mm.
23. The resin molded semiconductor device of claim 14 , wherein the semiconductor die comprises a medium electrical conductivity device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/040,211 US20140027894A1 (en) | 2008-08-29 | 2013-09-27 | Resin molded semiconductor device and manufacturing method thereof |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-220982 | 2008-08-29 | ||
JP2008220982A JP2010056372A (en) | 2008-08-29 | 2008-08-29 | Resin sealed semiconductor device, and method of manufacturing the same |
US12/539,939 US7998794B2 (en) | 2008-08-29 | 2009-08-12 | Resin molded semiconductor device and manufacturing method thereof |
US13/176,118 US8648452B2 (en) | 2008-08-29 | 2011-07-05 | Resin molded semiconductor device and manufacturing method thereof |
US14/040,211 US20140027894A1 (en) | 2008-08-29 | 2013-09-27 | Resin molded semiconductor device and manufacturing method thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/176,118 Continuation US8648452B2 (en) | 2008-08-29 | 2011-07-05 | Resin molded semiconductor device and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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US20140027894A1 true US20140027894A1 (en) | 2014-01-30 |
Family
ID=41724080
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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US12/539,939 Active 2029-12-25 US7998794B2 (en) | 2008-08-29 | 2009-08-12 | Resin molded semiconductor device and manufacturing method thereof |
US13/176,118 Active 2029-09-17 US8648452B2 (en) | 2008-08-29 | 2011-07-05 | Resin molded semiconductor device and manufacturing method thereof |
US14/040,211 Abandoned US20140027894A1 (en) | 2008-08-29 | 2013-09-27 | Resin molded semiconductor device and manufacturing method thereof |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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US12/539,939 Active 2029-12-25 US7998794B2 (en) | 2008-08-29 | 2009-08-12 | Resin molded semiconductor device and manufacturing method thereof |
US13/176,118 Active 2029-09-17 US8648452B2 (en) | 2008-08-29 | 2011-07-05 | Resin molded semiconductor device and manufacturing method thereof |
Country Status (3)
Country | Link |
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US (3) | US7998794B2 (en) |
JP (1) | JP2010056372A (en) |
CN (1) | CN101661892B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6783128B2 (en) * | 2016-12-06 | 2020-11-11 | 三菱電機株式会社 | Lead processing equipment |
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JPS62174962A (en) * | 1986-01-28 | 1987-07-31 | Shinko Electric Ind Co Ltd | Lead frame |
JPS6396947A (en) * | 1986-10-13 | 1988-04-27 | Mitsubishi Electric Corp | Lead frame semiconductor device |
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JP2001196401A (en) * | 2000-01-13 | 2001-07-19 | Rohm Co Ltd | Resin package forming method for semiconductor device |
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2008
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- 2009-08-28 CN CN2009101681269A patent/CN101661892B/en not_active Expired - Fee Related
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2011
- 2011-07-05 US US13/176,118 patent/US8648452B2/en active Active
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2013
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US20080036055A1 (en) * | 1998-11-20 | 2008-02-14 | Yee Jae H | Semiconductor package and method of making using leadframe having lead locks to secure leads to encapsulant |
US6873032B1 (en) * | 2001-04-04 | 2005-03-29 | Amkor Technology, Inc. | Thermally enhanced chip scale lead on chip semiconductor package and method of making same |
US20090146280A1 (en) * | 2005-11-28 | 2009-06-11 | Dai Nippon Printing Co., Ltd. | Circuit member, manufacturing method of the circuit member, and semiconductor device including the circuit member |
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Also Published As
Publication number | Publication date |
---|---|
US8648452B2 (en) | 2014-02-11 |
US20100052138A1 (en) | 2010-03-04 |
US20110260311A1 (en) | 2011-10-27 |
CN101661892A (en) | 2010-03-03 |
CN101661892B (en) | 2012-11-28 |
US7998794B2 (en) | 2011-08-16 |
JP2010056372A (en) | 2010-03-11 |
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