US20140030829A1 - Optoelectronic Module Having a Carrier Substrate and a Plurality of Radiation-Emitting Semiconductor Components and Method for the Production Thereof - Google Patents

Optoelectronic Module Having a Carrier Substrate and a Plurality of Radiation-Emitting Semiconductor Components and Method for the Production Thereof Download PDF

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US20140030829A1
US20140030829A1 US13/911,798 US201313911798A US2014030829A1 US 20140030829 A1 US20140030829 A1 US 20140030829A1 US 201313911798 A US201313911798 A US 201313911798A US 2014030829 A1 US2014030829 A1 US 2014030829A1
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Prior art keywords
radiation
emitting semiconductor
semiconductor components
carrier substrate
contact area
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US13/911,798
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Bert Braune
Joerg Erich Sorg
Walter Wegleiter
Karl Weidner
Oliver Wutz
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority to US13/911,798 priority Critical patent/US20140030829A1/en
Publication of US20140030829A1 publication Critical patent/US20140030829A1/en
Abandoned legal-status Critical Current

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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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Definitions

  • the present invention relates to an optoelectronic module comprising a carrier substrate and a plurality of radiation-emitting semiconductor components. Furthermore, the invention relates to a method for producing an optoelectronic module.
  • wire bonding and soldering or chip mounting with conductive adhesive are predominantly used as techniques for making electrical contact between a chip and a carrier.
  • LED arrays for illumination modules arise in this way.
  • ever smaller dimensions of the modules such as, for example, the module height and/or the base area of the modules, are desired.
  • a component comprises a carrier with a semiconductor chip arranged thereon, which is contact-connected in a planar fashion.
  • Modules comprising semiconductor chips contact-connected in a planar fashion advantageously have a small component height, as a result of which preferably a minimum distance between the light exit area of the semiconductor chip and optical components provided can be obtained.
  • the base area of the module cannot readily be reduced by the planar contact-connection since conductive structures which are arranged on the carrier and which serve for making electrical contact with the semiconductor chips have to be integrated into the module in an electrically insulated fashion.
  • One object of the invention is to provide an optoelectronic module having, in particular, a small structural height and at the same time a compact arrangement of a plurality of radiation-emitting semiconductor components.
  • an optoelectronic module comprising a carrier substrate and a plurality of radiation-emitting semiconductor components.
  • the carrier substrate has structured conductor tracks for making electrical contact with the radiation-emitting semiconductor components.
  • the radiation-emitting semiconductor components each comprise an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area, wherein the first contact area is in each case arranged on that side of the radiation-emitting semiconductor components which is remote from the carrier substrate.
  • the radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area of the radiation-emitting semiconductor components.
  • Conductive structures are arranged in regions on the electrically insulating layer.
  • One of the conductive structures electrically conductively connects at least the first contact area of a radiation-emitting semiconductor component to a further first contact area of a further radiation-emitting semiconductor component or to a conductor track of the carrier substrate.
  • the electrical contact-connection of the radiation-emitting semiconductor components is not effected by wires led at a distance from the carrier substrate, but rather by a conductive structure led at least partly on the electrically insulating layer.
  • This type of electrical contact-connection advantageously results in a particularly small structural height of the module.
  • a compact module can be provided by virtue of the conductive structure which electrically conductively connects the radiation-emitting semiconductor components among one another or to a conductor track of the carrier substrate.
  • the radiation-emitting semiconductor components of the module can be arranged on the carrier substrate in a space-saving manner. The base area of the module is thus advantageously reduced.
  • Optical elements should be understood to mean lenses, for example.
  • optical elements are understood to mean components which influence the radiation emitted by a semiconductor component in a targeted manner, in particular change the emission characteristic.
  • the radiation-emitting semiconductor components are preferably semiconductor chips, particularly preferably light-emitting diodes (LED).
  • LED light-emitting diodes
  • the radiation-emitting semiconductor components each comprise an active layer.
  • the active layer in each case comprises a pn junction, a double heterostructure, a single quantum well (SQW) structure or a multi quantum well (MQW) structure for generating radiation.
  • the designation quantum well structure does not exhibit any significance with regard to the dimensionality of the quantization. It therefore encompasses, inter alia, quantum wells, quantum wires and quantum dots and any combination of these structures.
  • the radiation-emitting semiconductor components are in each case based on a nitride, phosphide or arsenide compound semiconductor.
  • “based on nitride, phosphide or arsenide compound semiconductors” means that the active epitaxial layer sequence or at least one layer thereof comprises a III/V semiconductor material having the composition In x Ga y Al 1-x-y P, In x Ga y Al 1-x-y N or In x Ga y Al 1-x-y As, in each case where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and x+y ⁇ 1.
  • the radiation-emitting semiconductor components are each embodied as thin-film semiconductor components.
  • a thin-film semiconductor component is considered to be a semiconductor component during whose production the growth substrate onto which a semiconductor layer sequence comprising a semiconductor body of the thin-film semiconductor component was grown, for example epitaxially, has been stripped away.
  • the radiation-emitting semiconductor components are in each case connected to a carrier substrate that is different than the growth substrate for the semiconductor layer sequence of the semiconductor component.
  • the carrier substrate is advantageously not subject to the comparatively stringent requirements that have to be met by a growth substrate, for instance with regard to the crystal structure. Consequently, more materials are available for the choice of material of the carrier substrate than for the choice of material of the growth substrate.
  • the electrically insulating layer is preferably at least partly radiation-transmissive to the radiation emitted by the active layer of the radiation-emitting semiconductor components.
  • the radiation emitted by the radiation-emitting semiconductor components can thus be coupled out through the electrically insulating layer without significant optical losses being incurred in the process.
  • Absorption of the radiation emitted by the active layer in the electrically insulating layer can thereby advantageously be reduced, such that the efficiency of the module advantageously increases.
  • the absorption of the radiation of the radiation-emitting semiconductor components that is emitted by the active layer in the electrically insulating layer is less than 40%, particularly preferably less than 20%.
  • the electrically insulating layer is preferably a film, a resist or a polymer layer.
  • the electrically insulating layer contains at least one conversion element.
  • Suitable conversion elements such as a YAG: Ce powder, for instance, are described in WO 98/12757, for example, the content of which in this respect is hereby incorporated by reference.
  • the radiation-emitting semiconductor components each preferably emit a primary radiation having a wavelength ⁇ 0 .
  • the conversion element in the electrically insulating layer preferably at least partly absorbs radiation having the wavelength ⁇ 0 and emits a secondary radiation in a different wavelength range.
  • the module emits mixed radiation containing the primary radiation of the radiation-emitting semiconductor components and the secondary radiation of the conversion element.
  • the color locus is understood hereinafter to mean the numerical values that describe the color of the emitted light of the module in the CIE color space.
  • the electrically insulating layer can contain more than one conversion element. This results in a mixed radiation of the radiation emitted by the module, containing primary radiation and a plurality of secondary radiations of the plurality of conversion elements. Through the use of more than one conversion element, it is advantageously possible to effect a precise color selection of the color locus, thus resulting in a desired color locus of the emitted radiation of the module.
  • the radiation-emitting semiconductor components in each case to emit primary radiation in the same wavelength range. Rather, the radiation-emitting semiconductor components can be embodied such that they at least partly emit radiation in different wavelength ranges. Through a superimposition of the radiation emitted by the semiconductor components, a mixed radiation emitted by the module can thus be generated which is preferably in the white color region of the CIE color space.
  • a planarization layer is arranged at least between the individual radiation-emitting semiconductor components.
  • a planar module surface remote from the carrier substrate can advantageously be obtained by virtue of the planarization layer.
  • the electrically insulating layer is arranged on said planar surface.
  • the planarization layer is electrically insulating.
  • the planarization layer contains at least one conversion element.
  • the conversion element absorbs radiation emitted by at least one of the radiation-emitting semiconductor components and converts said radiation into radiation in a different wavelength range, such that mixed radiation of the radiation emitted by the module is generated.
  • Optical layers are, inter alia, layers that alter and/or correct the color locus of the radiation emitted by the radiation-emitting semiconductor components in a targeted manner.
  • the conversion element is integrated in the electrically insulating layer and/or the planarization layer, and the radiation-emitting semiconductor components are preferably surrounded directly by the planarization layer and/or the electrically insulating layer, the radiation emitted by the radiation-emitting semiconductor components is advantageously converted close to the radiation-emitting semiconductor components.
  • a compact module is thereby advantageously made possible.
  • the electrically insulating layer can thus perform the functions of a light conversion layer, of a carrier layer for the conductive structure, and of a protective layer for the radiation-emitting components.
  • the radiation-emitting semiconductor components are jointly surrounded by a frame arranged on the carrier substrate.
  • the frame preferably contains a ceramic or a plastic.
  • the radiation-emitting semiconductor components are spatially delimited from the surrounding medium.
  • the frame advantageously protects the radiation-emitting semiconductor components against, for example, environmental influences such as, for example, impacts or ingress of moisture.
  • the carrier substrate is a flexible substrate.
  • the carrier substrate can be embodied in a rigid fashion.
  • the carrier substrate can be embodied as a film.
  • that surface of the carrier substrate on which the radiation-emitting semiconductor components are arranged is non-planar.
  • the carrier substrate can therefore have a curvature, for example.
  • the surface of the carrier substrate can also have other shapings as long as it is possible to mount the radiation-emitting semiconductor components on one of the surfaces of the carrier substrate.
  • the conductive structures are formed by an anisotropic layer which is arranged on the electrically insulating layer and which has electrically conductive regions in each case at least in the region of the first contact area of the radiation-emitting semiconductor components.
  • the anisotropic film partially has regions which are conductive.
  • This conductivity can arise, for example, as a result of a locally applied pressure or irradiation.
  • the conductive regions of the anisotropic film in each case ensure an electrical connection of the radiation-emitting semiconductor components.
  • the anisotropic film is preferably at least partly radiation-transmissive to the radiation emitted by the semiconductor components.
  • the anisotropic film is particularly preferably at least partly radiation-transmissive to the radiation emitted by the semiconductor components in regions in which no conductivity is formed.
  • the anisotropic film can be removed in regions.
  • the anisotropic film is preferably removed in each case in the region of the radiation exit side of the radiation-emitting semiconductor components.
  • the electrically insulating layer is formed by means of a structured circuit board and the conductive structures are formed by means of electrically conductive webs projecting from the circuit board.
  • the webs preferably in each case lead from a contact location of a conductor track of the circuit board to the first contact area of a radiation-emitting semiconductor component.
  • the webs are in each case preferably shaped such that they are curved away from the circuit board in the direction of the semiconductor components.
  • the circuit board preferably has cutouts which are particularly preferably each arranged above the first contact area of a radiation-emitting semiconductor component.
  • the webs are metal webs.
  • the circuit board preferably comprises conductor tracks.
  • the conductor tracks of the circuit board are in each case preferably arranged in a manner electrically insulated from one another. Particularly preferably, this electrical insulation is effected by means of the cutouts that achieve a distance between the conductor tracks of the circuit board.
  • the electrically insulating layer is led in regions at the side areas of the respective radiation-emitting semiconductor component around the respective radiation-emitting semiconductor component.
  • the first contact area of the radiation-emitting semiconductor components is in each case led on the electrically insulating layer in such a way that the surface of the radiation-emitting semiconductor components which is remote from the carrier substrate is free of the first contact area.
  • the first contact layer being led in this way, a homogeneous energization of the radiation-emitting semiconductor components is ensured. Furthermore, it thus becomes possible to arrange an external electrical connection of the radiation-emitting semiconductor components at any desired regions of the first contact layer.
  • the electrically insulating layer is led at the side areas of the semiconductor component over the active layer of the semiconductor component.
  • the first contact area of the semiconductor components that is led in this way enables an electrical connection of the semiconductor components or a complex interconnection of the semiconductor components among one another.
  • a space-saving arrangement of the semiconductor components on the carrier substrate is advantageously possible as a result.
  • Another aspect of the invention is directed to a method for producing an optoelectronic module comprises, in particular, the following steps:
  • the carrier substrate has structured conductor tracks for making electrical contact with the radiation-emitting semiconductor components
  • the radiation-emitting semiconductor components each comprise an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area, wherein the first contact area is in each case arranged on that side of the radiation-emitting semiconductor components which is remote from the carrier substrate
  • conductive structures to partial regions of the electrically insulating layer, wherein one of the conductive structures electrically conductively connects at least the first contact area of a radiation-emitting semiconductor component to a further first contact area of a further radiation-emitting semiconductor component or to a conductor track of the carrier substrate.
  • the electrical contact-connection of the semiconductor components by means of planar conductive structures advantageously minimizes the height of the module.
  • the base area of the module is advantageously reduced comparatively in relation to conventional modules.
  • the use of an electrically insulating layer on which are led conductive structures for making electrical contact with the semiconductor components advantageously leads to a simplification of the construction process of the modules.
  • the interconnection of the semiconductor components, the encapsulation of the semiconductor components and, if appropriate, the light conversion, which is preferably effected by conversion elements integrated in the electrically insulating layer, are advantageously effected in each case by means of a coating process.
  • the conductive structures are applied by means of a printing method.
  • the conductive structures are applied to the electrically insulating layer by means of a screen printing method, a stencil printing method or a pad printing method.
  • the conductive structures can be applied by means of vapor deposition.
  • the conductive structures can be applied by means of physical vapor deposition (PVD process) or chemical vapor deposition (CVD process).
  • PVD process physical vapor deposition
  • CVD process chemical vapor deposition
  • the conductive structures are applied partially.
  • Selective application of the conductive structures is preferably effected by means of printing, spraying or by means of PVD/CVD in conjunction with a mask technique, in particular a stencil.
  • a further possibility for applying the conductive structures consists in directly printing conductor tracks onto the electrically insulating layer.
  • the conductive structures are formed by means of an anisotropic layer which is arranged on the electrically insulating layer and which is embodied in electrically conductive fashion at least in the region of the first contact area of the radiation-emitting semiconductor components.
  • the electrically conductive regions of the anisotropic layer are preferably formed by means of a printing method, a thermal method, or irradiation, for example by means of a UV laser.
  • the conductor structures can be integrated in a film that is laminated onto the electrically insulating film.
  • the laminated-on film comprises conductive structures, for example metallizations.
  • These conductive structures are preferably already arranged in the film in such a way as to enable electrical contact to be made with the radiation-emitting semiconductor components in an envisaged manner.
  • an automatic contact-making method (TAB method: tape automated bonding) is employed for this purpose.
  • a planarization layer is introduced at least into the interspaces between the radiation-emitting semiconductor components.
  • the module is planarized such that a module surface remote from the carrier substrate is embodied in a planar fashion.
  • the conductive structures are in each case embodied as an electrically conductive web, wherein the webs are in each case electrically conductively connected to the first contact area of a radiation-emitting semiconductor component by means of a stamping-wedge process.
  • FIG. 1 shows a schematic cross section of a first exemplary embodiment of a module in one intermediate step of the production method
  • FIG. 2 shows a schematic cross section of a further exemplary embodiment of a module according to the invention
  • FIG. 3 shows a schematic cross section of one exemplary embodiment of a module according to the invention
  • FIG. 4 shows a schematic excerpt from a further exemplary embodiment of a module according to the invention
  • FIG. 5 shows a schematic excerpt from a further exemplary embodiment of a module according to the invention
  • FIG. 6 shows a schematic cross section of a further exemplary embodiment of a module according to the invention
  • FIG. 7A shows a schematic excerpt from a further exemplary embodiment of a module according to the invention.
  • FIG. 7B shows a schematic plan view of the excerpt from the exemplary embodiment from FIG. 7A .
  • FIG. 7C shows a schematic plan view of a further exemplary embodiment of a module according to the invention.
  • FIG. 1 illustrates an optoelectronic module comprising a carrier substrate 1 and a plurality of radiation-emitting semiconductor components 2 .
  • the radiation-emitting semiconductor components 2 each comprise an active layer for generating electromagnetic radiation, a first contact area 21 and a second contact area 22 .
  • the first contact area 21 is arranged on that surface of the radiation-emitting semiconductor components 2 which is remote from the carrier substrate 1 .
  • the radiation-emitting semiconductor components 2 are preferably embodied as semiconductor chips, particularly preferably in each case a light-emitting diode (LED).
  • LED light-emitting diode
  • the active layers of the radiation-emitting semiconductor components 2 each comprise a pn junction, a double heterostructure, a single quantum well structure or a multi quantum well structure for generating radiation.
  • the radiation-emitting semiconductor components 2 are in each case based on a nitride, phosphide or arsenide compound semiconductor.
  • the carrier substrate 1 has structured conductor tracks for making electrical contact with the radiation-emitting semiconductor components 2 .
  • a radiation-emitting semiconductor component 2 is respectively arranged on a conductor track of the carrier substrate 1 . That means that the second contact area 22 is in each case in mechanical and electrical contact with a conductor track of the carrier substrate 1 .
  • the conductor tracks on which a radiation-emitting semiconductor component 2 is respectively arranged are electrically insulated from one another.
  • the radiation-emitting semiconductor components 2 are therefore arranged in a manner electrically insulated from one another on the conductor tracks of the carrier substrate 1 .
  • a planarization layer 3 is arranged between the individual radiation-emitting semiconductor components 2 .
  • a planar module surface remote from the carrier substrate 1 can advantageously be produced by virtue of the planarization layer 3 .
  • the planarization layer 3 is electrically insulated; particularly preferably, the planarization layer 3 contains a dielectric material.
  • the planarization layer 3 is based on silicone.
  • the planarization layer 3 contains silicone.
  • the planarization layer 3 can contain other polymers or inorganic materials.
  • the height of the planarization layer 3 can exceed the height of the radiation-emitting semiconductor components 2 .
  • the planarization layer 3 can be led beyond the height of the radiation-emitting semiconductor components 2 , such that it runs at least partly over those surfaces of the radiation-emitting semiconductor components 2 which are remote from the carrier substrate 1 .
  • an improved electrical insulation of the radiation-emitting semiconductor components 2 is thereby ensured.
  • the planarization layer 3 preferably consists of a material that is at least partly radiation-transmissive to the radiation emitted by the radiation-emitting semiconductor components 2 .
  • the planarization layer 3 can furthermore contain at least one conversion element 6 .
  • the conversion element 6 absorbs the radiation emitted by at least one of the radiation-emitting semiconductor components 2 and converts said radiation into radiation in a different wavelength range, such that mixed radiation of the radiation emitted by the module is generated.
  • the conversion element 6 Through a suitable choice of the conversion element 6 , it is possible to effect a change in the color locus of the radiation emitted by the radiation-emitting semiconductor components 2 . As a result, a desired color locus of the radiation emitted by the module can advantageously be obtained. Particularly preferably, the module emits radiation in the white color locus range.
  • the radiation-emitting semiconductor components 2 are jointly surrounded by a frame 7 arranged on the carrier substrate 1 .
  • the frame 7 preferably contains a ceramic or a plastic.
  • the radiation-emitting semiconductor components 2 and the planarization layer 3 are spatially delimited from the surroundings by means of the frame 7 .
  • the frame 7 advantageously protects the radiation-emitting semiconductor components 2 against, for example, environmental influences such as impacts, for example.
  • An electrically insulating layer 4 is preferably at least partly arranged on the radiation-emitting semiconductor components 2 and on the planarization layer 3 .
  • the electrically insulating layer 4 has in each case a cutout in a region of the first contact area 21 of the radiation-emitting semiconductor components 2 .
  • the electrically insulating layer 4 is preferably at least partly radiation-transmissive to the radiation of the radiation-emitting semiconductor components 2 which is emitted by the active layer.
  • the radiation emitted by the radiation-emitting semiconductor components 2 can thus be coupled out through the electrically insulating layer 4 without significant optical losses being incurred in the process.
  • the radiation coupling-out of the radiation emitted by the radiation-emitting semiconductor components 2 from the module is preferably effected on that side of the module which is remote from the carrier substrate 1 .
  • the electrically insulating layer 4 is preferably a film, a resist or a polymer layer.
  • the electrically insulating layer 4 can, just like the planarization layer 3 , contain at least one conversion element (not illustrated).
  • the conversion element in the electrically insulating layer preferably at least partly absorbs radiation of the radiation emitted by the radiation-emitting semiconductor components 2 and emits a secondary radiation in a different wavelength range.
  • the module emits mixed radiation containing both primary radiation of the radiation-emitting semiconductor components 2 and secondary radiation of the conversion element.
  • Optical layers are, for example, layers which alter and/or correct the color locus of the radiation emitted by the semiconductor components in a targeted manner.
  • the radiation emitted by the semiconductor components 2 can thus advantageously be converted close to the semiconductor components 2 .
  • a compact module is made possible.
  • the electrically insulating layer 4 has cutouts in regions. Preferably, a cutout in the electrically insulating layer 4 is formed in each case in a region of the first contact area 21 of a radiation-emitting semiconductor component 2 .
  • the electrically insulating layer 4 is embodied in one piece.
  • conductive structures are arranged in regions on the electrically insulating layer 4 (not illustrated).
  • the module prior to application of the conductive structures is illustrated in the exemplary embodiment in FIG. 1 .
  • the module in exemplary embodiment 1 accordingly shows a module during the production process.
  • a stencil 5 is arranged on that side of the module which is remote from the carrier substrate 1 .
  • the stencil 5 is employed during the production step of applying the conductive structures.
  • the stencil 5 is used for the structuring of the conductive structures.
  • the stencil 5 preferably has cutouts in the region of the cutouts of the electrically insulating layer 4 .
  • the conductive structures are applied to the electrically insulating layer 4 or to the stencil 5 preferably by means of a printing method.
  • a printing method in particular a screen printing or pad printing method, it is thus possible to apply a, preferably monolayer, conductive structure, in particular a metallization layer, for the interconnection of the radiation-emitting semiconductor components 2 .
  • the structuring of the conductive structures is preferably formed by means of the stencil 5 such that the radiation-emitting semiconductor components 2 are electrically conductively connected to one another or to conductor tracks of the carrier body by means of the conductive structures in an envisaged manner. Consequently, the conductive structures electrically connect at least the first contact area of a radiation-emitting semiconductor component 2 to a further first contact area of a further radiation-emitting semiconductor component 2 or to a conductor track of the carrier substrate 1 (not illustrated).
  • the stencil 5 After application of the conductive structures, the stencil 5 is removed. Therefore, the stencil 5 is arranged on the module only temporarily during the production process.
  • FIG. 2 An exemplary embodiment of a finished module comprising conductive structures 8 is illustrated in the exemplary embodiment in FIG. 2 .
  • the module from FIG. 2 does not have a frame arranged on the carrier substrate 1 and surrounding the radiation-emitting semiconductor components 2 and the planarization layer 3 .
  • the radiation-emitting semiconductor components 2 are preferably fixed on the structured conductor tracks of the carrier substrate 1 by means of a solder or an electrically conductive adhesive.
  • an electrically insulating layer 4 is applied on the radiation-emitting semiconductor components 2 and the planarization layer 3 .
  • the electrically insulating layer 4 has cutouts in regions of the first contact area 21 of the radiation-emitting semiconductor components 2 . Said cutouts are preferably produced by means of a laser method or a lithography method.
  • the conductive structures 8 are applied to the electrically insulating layer 4 by means of a jet printing method, for example.
  • the conductive structures 8 are preferably applied by means of a nozzle 9 .
  • the nozzle 9 writes the conductive structures, preferably monolayer metal tracks, onto that side of the module which is remote from the carrier substrate 1 .
  • the conductive structures 8 are applied on the electrically insulating layer 4 in such a way that the radiation-emitting semiconductor components 2 are electrically contact-connected among one another or to a conductor track of the carrier substrate 1 .
  • the conductive structures 8 are situated in each case in the region of the first contact area 21 of the radiation-emitting semiconductor components 2 .
  • the radiation-emitting semiconductor components 2 can thus be grounded separately. Alternatively, the radiation-emitting semiconductor components 2 can be electrically conductively connected to one another.
  • the exemplary embodiment in FIG. 3 differs from the exemplary embodiment from FIG. 2 in that the carrier substrate 1 is a flexible substrate.
  • that surface of the carrier substrate 1 on which the radiation-emitting semiconductor components 2 are arranged is non-planar.
  • the carrier substrate 1 can have a curvature, for example.
  • the surface of the carrier substrate 1 can also have other shapings as long as mounting of the radiation-emitting semiconductor components 2 is possible.
  • the module can be mounted in rotatable fashion in the exemplary embodiment in FIG. 3 .
  • the module can be moved, for example rotated, for example in accordance with a desired structuring of the conductive structures.
  • FIG. 4 An excerpt from an optoelectronic module is illustrated in the exemplary embodiment in FIG. 4 .
  • only one radiation-emitting semiconductor component 2 of the module is illustrated.
  • the further radiation-emitting semiconductor components of the module are not shown, for the sake of clarity.
  • radiation-emitting semiconductor components 2 are preferably adhesively bonded by means of an adhesive layer or soldered by means of a solder.
  • an electrically insulating layer 4 is preferably arranged on the radiation-emitting semiconductor components 2 and on the carrier substrate 1 .
  • the electrically insulating layer 4 is, for example, a laminated-on film or a layer comprising glass.
  • the electrically insulating layer 4 has a cutout in the region of the first contact area 21 of the radiation-emitting semiconductor component 2 .
  • the electrically insulating layer 4 is preferably a dielectric layer.
  • a conductive structure particularly preferably a metal layer is deposited onto the electrically insulating layer 4 by means of vapor deposition over the whole area (not illustrated).
  • the whole-area conductive structure is deposited by means of physical or chemical vapor deposition.
  • the conductive structure formed over the whole area is structured, for example, by means of photolithography and etching in accordance with a desired interconnection of the radiation-emitting semiconductor components 2 .
  • the whole-area conductive structure is preferably structured such that the radiation-emitting semiconductor components are electrically conductively connected to one another or a radiation-emitting semiconductor component 2 is electrically conductively connected to a conductor track of the carrier substrate 1 .
  • the electrically insulating layer in particular the dielectric layer, is planarized before the deposition of the conductive structure, for example by means of an SOG method.
  • the conductive structure 8 is formed by an anisotropic layer 8 a , 8 b .
  • the anisotropic layer 8 a , 8 b is an anisotropic film, which is preferably applied by lamination.
  • the anisotropic layer preferably has two partial regions 8 a , 8 b .
  • One of the partial regions 8 a is preferably embodied in conductive fashion.
  • Another partial region 8 b is electrically insulating.
  • the formation of the conductivity in the region 8 a of the anisotropic layer is preferably effected by means of a locally applied pressure or irradiation.
  • An electrical connection of the radiation-emitting semiconductor component 2 in the region of the first contact area 21 is advantageously ensured as a result.
  • the anisotropic layer 8 a , 8 b is at least partly radiation-transmissive to the radiation emitted by the radiation-emitting semiconductor component 2 .
  • the anisotropic layer 8 a , 8 b can be selectively removed in the second partial region 8 b after being applied by lamination. In this case, the anisotropic layer 8 a , 8 b need not be radiation-transmissive.
  • the exemplary embodiment of an optoelectronic module as illustrated in FIG. 6 comprises a plurality of radiation-emitting semiconductor components 2 , which are fixed on a carrier substrate 1 by means of a solder or an adhesive layer 10 .
  • second contact areas 22 of the radiation-emitting semiconductor components 2 are in electrical contact with conductor tracks arranged on the carrier substrate 1 .
  • the conductor tracks of the radiation-emitting semiconductor components 2 are preferably arranged in a manner electrically insulated from one another.
  • the electrically insulating layer 4 is formed by a structured circuit board and the conductive structures 8 are formed by electrically conductive webs, for example metal webs, projecting from the circuit board.
  • the circuit board comprises, in particular, an electrically insulating material with electrically conductive conductor tracks contained therein.
  • the electrically insulating material of the circuit board is at least partly radiation-transmissive to the radiation emitted by the radiation-emitting semiconductor components 2 .
  • the electrically insulating material of the circuit board can furthermore contain at least one conversion element in order to convert the radiation emitted by the radiation-emitting semiconductor components 2 .
  • the conductor tracks contained in the electrically insulating material of the circuit board are preferably at least partly electrically conductively connected to the metal webs 8 .
  • the metal webs 8 are in each case preferably electrically conductively connected to the first contact area 21 of a radiation-emitting semiconductor component 2 .
  • the circuit board 4 has in each case a cutout in the region of the first contact area 21 of a radiation-emitting semiconductor component 2 .
  • the radiation-emitting semiconductor components 2 are in each case electrically contact-connected by means of the webs 8 and by means of the conductor tracks of the circuit board 4 .
  • the radiation-emitting semiconductor components 2 can be electrically conductively connected to one another or electrically conductively connected respectively to a conductor track of the carrier substrate 1 .
  • the metal webs 8 are preferably shaped such that they are curved from the contact location of the circuit board in the direction of the radiation-emitting semiconductor components 2 .
  • the metal webs 8 can, for example, in each case be electrically and mechanically connected to the first contact area 21 of the radiation-emitting semiconductor components 2 by means of a stamping-wedge process.
  • FIGS. 7A and 7B each illustrate a schematic excerpt from an optoelectronic module.
  • FIG. 7A illustrates a cross section of an excerpt from a module.
  • FIG. 7B shows in this respect a plan view of the excerpt from FIG. 7A .
  • FIG. 7A shows a radiation-emitting semiconductor component 2 .
  • An optoelectronic module is preferably composed of a plurality of radiation-emitting semiconductor components 2 , which is illustrated in FIG. 7A , for example, wherein the radiation-emitting semiconductor components 2 are preferably arranged on a carrier substrate 1 .
  • the radiation-emitting semiconductor component 2 from FIG. 7A comprises, in contrast to the exemplary embodiments in FIGS. 1 to 6 , a first contact area 21 that is led on the electrically insulating layer 4 .
  • the electrically insulating layer 4 is led in each case in regions at the side areas of the radiation-emitting semiconductor component 2 around the respective radiation-emitting semiconductor component 2 .
  • the electrically insulating layer 4 is led at the side areas of the radiation-emitting semiconductor component 2 over the active layer 2 a of the semiconductor component 2 .
  • the first contact layer 21 is likewise led at the side area of the semiconductor component 2 .
  • the first contact layer 21 is led on the electrically insulating layer 4 .
  • that surface of the radiation-emitting semiconductor component 2 which is remote from the carrier substrate is preferably free of the first contact area 21 .
  • a region of the first contact layer 21 is adjoined by an electrical lead 12 .
  • electrical leads 12 for the electrical interconnection of the semiconductor components 2 can be led at any desired regions of the first contact layer 21 .
  • the semiconductor components of a module can thus be electrically interconnected with one another by means of the leads 12 .
  • the semiconductor components can be electrically connected separately from one another.
  • FIG. 7B illustrates a plan view of the contact routing of a semiconductor component from FIG. 7A .
  • the first contact layer 21 is in this case arranged laterally with respect to a radiation coupling-out area of the semiconductor component 2 .
  • the first contact layer 21 is embodied in a frame-type fashion.
  • the first contact layer 21 forms a closed track.
  • An electrical lead 12 serving for the interconnection of the semiconductor component 2 is arranged in regions at the first contact layer 21 .
  • a current distributing layer 13 is arranged on the radiation-emitting semiconductor component 2 .
  • the current distributing layer 13 is at least partly radiation-transmissive to the radiation emitted by the semiconductor component 2 .
  • the current distributing layer 13 is an ITO layer or a ZnO layer.
  • the first contact layer 21 is preferably a metallization.
  • the radiation coupling-out area of the semiconductor component 2 is preferably free of the metallization.
  • the metallization is led around the semiconductor component 2 , thereby ensuring a more homogeneous energization than, for example, by bonding pads conventionally used.
  • FIG. 7C illustrates a plan view of a module comprising a plurality of radiation-emitting semiconductor components 2 from FIG. 7A .
  • the module comprises four radiation-emitting semiconductor components 2 .
  • an alternative number of semiconductor components 2 is possible, depending on the respective application areas and intended uses of the module.
  • the carrier substrate 1 has on the mounting side for the semiconductor components 2 in each case conductor tracks which are electrically insulated from one another and on which a semiconductor component is in each case mechanically and electrically connected.
  • the semiconductor components 2 can be electrically interconnected with one another.
  • the carrier substrate 1 itself is embodied in electrically conductive fashion, such that the semiconductor components 2 are at a common electrical potential.
  • a conductor track on which the semiconductor components 2 are jointly arranged can be arranged on the carrier substrate 1 .
  • the electrical leads 12 of the semiconductor components 2 are preferably led to a further electrical connection (not illustrated).

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Abstract

An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The semiconductor components each include an active layer for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the semiconductor components that is remote from the carrier substrate. The semiconductor components are provided with an electrically insulating layer having a cutout in a region of the first contact area. Conductive structures are arranged in regions on the insulating layer. One of the conductive structures electrically conductively connects at least the first contact area of a semiconductor component to a further first contact area of a further semiconductor component or to a conductor track of the carrier substrate. A method for producing such a module is also described.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This is a divisional application from U.S. patent application Ser. No. 13/121,128 filed Sep. 12, 2011, which is based upon and claims priority from prior International Application No. PCT/DE2009/001217 filed Aug. 25, 2009 and German Patent Application No. 10 2008 049 188.8 filed Sep. 26, 2008, the disclosure content of which are hereby incorporated herein by reference in their entity.
    • FIELD OF THE INVENTION
  • The present invention relates to an optoelectronic module comprising a carrier substrate and a plurality of radiation-emitting semiconductor components. Furthermore, the invention relates to a method for producing an optoelectronic module.
    • BACKGROUND OF THE INVENTION
  • In conventional optoelectronic modules, wire bonding and soldering or chip mounting with conductive adhesive are predominantly used as techniques for making electrical contact between a chip and a carrier. By way of example, LED arrays for illumination modules arise in this way. In the course of miniaturization, ever smaller dimensions of the modules, such as, for example, the module height and/or the base area of the modules, are desired.
  • One miniaturized construction and connection technique for LEDs is known from the published patent application DE 10 353 679 A1, for example. In this case, a component comprises a carrier with a semiconductor chip arranged thereon, which is contact-connected in a planar fashion.
  • Modules comprising semiconductor chips contact-connected in a planar fashion advantageously have a small component height, as a result of which preferably a minimum distance between the light exit area of the semiconductor chip and optical components provided can be obtained. However, the base area of the module cannot readily be reduced by the planar contact-connection since conductive structures which are arranged on the carrier and which serve for making electrical contact with the semiconductor chips have to be integrated into the module in an electrically insulated fashion.
  • Particularly in the case of modules having a plurality of radiation-emitting semiconductor components, a compact arrangement of the optoelectronic components on the carrier substrate is desired.
    • SUMMARY OF THE INVENTION
  • One object of the invention is to provide an optoelectronic module having, in particular, a small structural height and at the same time a compact arrangement of a plurality of radiation-emitting semiconductor components.
  • This object is achieved by means of an optoelectronic module comprising the features of patent claim 1 and a method for producing said module comprising the features of patent claim 11. The dependent claims relate to advantageous embodiments and preferred developments of the module and of the method for producing said module.
  • This and other objects are attained in accordance with one aspect of the invention directed to an optoelectronic module comprising a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate has structured conductor tracks for making electrical contact with the radiation-emitting semiconductor components. The radiation-emitting semiconductor components each comprise an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area, wherein the first contact area is in each case arranged on that side of the radiation-emitting semiconductor components which is remote from the carrier substrate. The radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area of the radiation-emitting semiconductor components. Conductive structures are arranged in regions on the electrically insulating layer. One of the conductive structures electrically conductively connects at least the first contact area of a radiation-emitting semiconductor component to a further first contact area of a further radiation-emitting semiconductor component or to a conductor track of the carrier substrate.
  • Therefore, the electrical contact-connection of the radiation-emitting semiconductor components is not effected by wires led at a distance from the carrier substrate, but rather by a conductive structure led at least partly on the electrically insulating layer. This type of electrical contact-connection advantageously results in a particularly small structural height of the module. Furthermore, a compact module can be provided by virtue of the conductive structure which electrically conductively connects the radiation-emitting semiconductor components among one another or to a conductor track of the carrier substrate. Thus, the radiation-emitting semiconductor components of the module can be arranged on the carrier substrate in a space-saving manner. The base area of the module is thus advantageously reduced.
  • Furthermore, a close arrangement of the conductive structure to the radiation-emitting semiconductor components is possible. This type of contact-connection of the radiation-emitting semiconductor components results in a particularly small structural height of the module, which advantageously enables, in particular, a close arrangement of optical elements, for example, to the radiation-emitting semiconductor components.
  • Optical elements should be understood to mean lenses, for example. In particular, optical elements are understood to mean components which influence the radiation emitted by a semiconductor component in a targeted manner, in particular change the emission characteristic.
  • The radiation-emitting semiconductor components are preferably semiconductor chips, particularly preferably light-emitting diodes (LED).
  • The radiation-emitting semiconductor components each comprise an active layer. The active layer in each case comprises a pn junction, a double heterostructure, a single quantum well (SQW) structure or a multi quantum well (MQW) structure for generating radiation. In this case, the designation quantum well structure does not exhibit any significance with regard to the dimensionality of the quantization. It therefore encompasses, inter alia, quantum wells, quantum wires and quantum dots and any combination of these structures.
  • Preferably, the radiation-emitting semiconductor components are in each case based on a nitride, phosphide or arsenide compound semiconductor. In the present context, “based on nitride, phosphide or arsenide compound semiconductors” means that the active epitaxial layer sequence or at least one layer thereof comprises a III/V semiconductor material having the composition InxGayAl1-x-yP, InxGayAl1-x-yN or InxGayAl1-x-yAs, in each case where 0≦x≦1, 0≦y≦1 and x+y≦1.
  • In one preferred configuration, the radiation-emitting semiconductor components are each embodied as thin-film semiconductor components. In the context of the application, a thin-film semiconductor component is considered to be a semiconductor component during whose production the growth substrate onto which a semiconductor layer sequence comprising a semiconductor body of the thin-film semiconductor component was grown, for example epitaxially, has been stripped away. The radiation-emitting semiconductor components are in each case connected to a carrier substrate that is different than the growth substrate for the semiconductor layer sequence of the semiconductor component.
  • The carrier substrate is advantageously not subject to the comparatively stringent requirements that have to be met by a growth substrate, for instance with regard to the crystal structure. Consequently, more materials are available for the choice of material of the carrier substrate than for the choice of material of the growth substrate.
  • The electrically insulating layer is preferably at least partly radiation-transmissive to the radiation emitted by the active layer of the radiation-emitting semiconductor components. The radiation emitted by the radiation-emitting semiconductor components can thus be coupled out through the electrically insulating layer without significant optical losses being incurred in the process. Absorption of the radiation emitted by the active layer in the electrically insulating layer can thereby advantageously be reduced, such that the efficiency of the module advantageously increases. Preferably, the absorption of the radiation of the radiation-emitting semiconductor components that is emitted by the active layer in the electrically insulating layer is less than 40%, particularly preferably less than 20%.
  • The electrically insulating layer is preferably a film, a resist or a polymer layer.
  • In one preferred configuration, the electrically insulating layer contains at least one conversion element. Suitable conversion elements, such as a YAG: Ce powder, for instance, are described in WO 98/12757, for example, the content of which in this respect is hereby incorporated by reference.
  • The radiation-emitting semiconductor components each preferably emit a primary radiation having a wavelength λ0. The conversion element in the electrically insulating layer preferably at least partly absorbs radiation having the wavelength λ0 and emits a secondary radiation in a different wavelength range. As a result, the module emits mixed radiation containing the primary radiation of the radiation-emitting semiconductor components and the secondary radiation of the conversion element.
  • Through a suitable choice of the conversion element, it is possible to effect a change in the color locus of the radiation emitted by the radiation-emitting semiconductor components. As a result, a desired color locus of the radiation emitted by the module can advantageously be obtained.
  • The color locus is understood hereinafter to mean the numerical values that describe the color of the emitted light of the module in the CIE color space.
  • Alternatively, the electrically insulating layer can contain more than one conversion element. This results in a mixed radiation of the radiation emitted by the module, containing primary radiation and a plurality of secondary radiations of the plurality of conversion elements. Through the use of more than one conversion element, it is advantageously possible to effect a precise color selection of the color locus, thus resulting in a desired color locus of the emitted radiation of the module.
  • It should be noted that it is not absolutely necessary for the radiation-emitting semiconductor components in each case to emit primary radiation in the same wavelength range. Rather, the radiation-emitting semiconductor components can be embodied such that they at least partly emit radiation in different wavelength ranges. Through a superimposition of the radiation emitted by the semiconductor components, a mixed radiation emitted by the module can thus be generated which is preferably in the white color region of the CIE color space.
  • In one preferred configuration, a planarization layer is arranged at least between the individual radiation-emitting semiconductor components.
  • A planar module surface remote from the carrier substrate can advantageously be obtained by virtue of the planarization layer. Preferably, the electrically insulating layer is arranged on said planar surface. Particularly preferably, the planarization layer is electrically insulating.
  • In one configuration of the module, the planarization layer contains at least one conversion element. Particularly preferably, the conversion element absorbs radiation emitted by at least one of the radiation-emitting semiconductor components and converts said radiation into radiation in a different wavelength range, such that mixed radiation of the radiation emitted by the module is generated.
  • By virtue of the fact that the conversion element or the conversion elements is/are integrated directly in the electrically insulating layer and/or in the planarization layer, advantageously no further optical layers are required. Optical layers are, inter alia, layers that alter and/or correct the color locus of the radiation emitted by the radiation-emitting semiconductor components in a targeted manner. By virtue of the fact that the conversion element is integrated in the electrically insulating layer and/or the planarization layer, and the radiation-emitting semiconductor components are preferably surrounded directly by the planarization layer and/or the electrically insulating layer, the radiation emitted by the radiation-emitting semiconductor components is advantageously converted close to the radiation-emitting semiconductor components. A compact module is thereby advantageously made possible.
  • In this case, the electrically insulating layer can thus perform the functions of a light conversion layer, of a carrier layer for the conductive structure, and of a protective layer for the radiation-emitting components.
  • In one preferred configuration of the module, the radiation-emitting semiconductor components are jointly surrounded by a frame arranged on the carrier substrate.
  • The frame preferably contains a ceramic or a plastic. By means of the frame, the radiation-emitting semiconductor components are spatially delimited from the surrounding medium. Furthermore, the frame advantageously protects the radiation-emitting semiconductor components against, for example, environmental influences such as, for example, impacts or ingress of moisture.
  • In one preferred configuration of the module, the carrier substrate is a flexible substrate.
  • It is accordingly not absolutely necessary for the carrier substrate to be embodied in a rigid fashion. In particular, the carrier substrate can be embodied as a film.
  • In one preferred configuration of the module, that surface of the carrier substrate on which the radiation-emitting semiconductor components are arranged is non-planar.
  • The carrier substrate can therefore have a curvature, for example. In particular, the surface of the carrier substrate can also have other shapings as long as it is possible to mount the radiation-emitting semiconductor components on one of the surfaces of the carrier substrate.
  • In one preferred configuration of the module, the conductive structures are formed by an anisotropic layer which is arranged on the electrically insulating layer and which has electrically conductive regions in each case at least in the region of the first contact area of the radiation-emitting semiconductor components.
  • Accordingly, the anisotropic film partially has regions which are conductive. This conductivity can arise, for example, as a result of a locally applied pressure or irradiation. The conductive regions of the anisotropic film in each case ensure an electrical connection of the radiation-emitting semiconductor components.
  • The anisotropic film is preferably at least partly radiation-transmissive to the radiation emitted by the semiconductor components. In particular, the anisotropic film is particularly preferably at least partly radiation-transmissive to the radiation emitted by the semiconductor components in regions in which no conductivity is formed.
  • Alternatively, the anisotropic film can be removed in regions. In particular, in this case, the anisotropic film is preferably removed in each case in the region of the radiation exit side of the radiation-emitting semiconductor components.
  • In one preferred configuration of the module, the electrically insulating layer is formed by means of a structured circuit board and the conductive structures are formed by means of electrically conductive webs projecting from the circuit board.
  • The webs preferably in each case lead from a contact location of a conductor track of the circuit board to the first contact area of a radiation-emitting semiconductor component. In this case, the webs are in each case preferably shaped such that they are curved away from the circuit board in the direction of the semiconductor components. The circuit board preferably has cutouts which are particularly preferably each arranged above the first contact area of a radiation-emitting semiconductor component. Preferably, the webs are metal webs.
  • The circuit board preferably comprises conductor tracks. The conductor tracks of the circuit board are in each case preferably arranged in a manner electrically insulated from one another. Particularly preferably, this electrical insulation is effected by means of the cutouts that achieve a distance between the conductor tracks of the circuit board.
  • In this configuration of the module, it is also possible for a plurality of circuit boards to be arranged one above another, such that a multilayered arrangement is formed. As a result, a plurality of interconnection planes of the module are advantageously possible, as a result of which a higher level of circuit integration is advantageously obtained in the module.
  • In a further preferred configuration of the module, the electrically insulating layer is led in regions at the side areas of the respective radiation-emitting semiconductor component around the respective radiation-emitting semiconductor component. The first contact area of the radiation-emitting semiconductor components is in each case led on the electrically insulating layer in such a way that the surface of the radiation-emitting semiconductor components which is remote from the carrier substrate is free of the first contact area.
  • By virtue of the first contact layer being led in this way, a homogeneous energization of the radiation-emitting semiconductor components is ensured. Furthermore, it thus becomes possible to arrange an external electrical connection of the radiation-emitting semiconductor components at any desired regions of the first contact layer.
  • Preferably, the electrically insulating layer is led at the side areas of the semiconductor component over the active layer of the semiconductor component.
  • The first contact area of the semiconductor components that is led in this way enables an electrical connection of the semiconductor components or a complex interconnection of the semiconductor components among one another. A space-saving arrangement of the semiconductor components on the carrier substrate is advantageously possible as a result.
  • Another aspect of the invention is directed to a method for producing an optoelectronic module comprises, in particular, the following steps:
  • a) arranging a plurality of radiation-emitting semiconductor components on a carrier substrate, wherein the carrier substrate has structured conductor tracks for making electrical contact with the radiation-emitting semiconductor components, the radiation-emitting semiconductor components each comprise an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area, wherein the first contact area is in each case arranged on that side of the radiation-emitting semiconductor components which is remote from the carrier substrate,
    b) applying an electrically insulating layer to the radiation-emitting semiconductor components, wherein the electrically insulating layer in each case has a cutout in the region of the first contact area of the respective radiation-emitting semiconductor component, and
    c) applying conductive structures to partial regions of the electrically insulating layer, wherein one of the conductive structures electrically conductively connects at least the first contact area of a radiation-emitting semiconductor component to a further first contact area of a further radiation-emitting semiconductor component or to a conductor track of the carrier substrate.
  • Advantageous configurations of the method arise analogously to the advantageous configurations of the module, and vice versa.
  • The electrical contact-connection of the semiconductor components by means of planar conductive structures advantageously minimizes the height of the module. At the same time, the base area of the module is advantageously reduced comparatively in relation to conventional modules.
  • The use of an electrically insulating layer on which are led conductive structures for making electrical contact with the semiconductor components advantageously leads to a simplification of the construction process of the modules. The interconnection of the semiconductor components, the encapsulation of the semiconductor components and, if appropriate, the light conversion, which is preferably effected by conversion elements integrated in the electrically insulating layer, are advantageously effected in each case by means of a coating process.
  • In one preferred configuration of the method, the conductive structures are applied by means of a printing method.
  • Preferably, the conductive structures are applied to the electrically insulating layer by means of a screen printing method, a stencil printing method or a pad printing method.
  • Alternatively, the conductive structures can be applied by means of vapor deposition.
  • In this case, it is possible for the conductive structures to be applied by means of physical vapor deposition (PVD process) or chemical vapor deposition (CVD process).
  • Particularly preferably, the conductive structures are applied partially. Selective application of the conductive structures is preferably effected by means of printing, spraying or by means of PVD/CVD in conjunction with a mask technique, in particular a stencil.
  • A further possibility for applying the conductive structures consists in directly printing conductor tracks onto the electrically insulating layer.
  • In a further preferred configuration, the conductive structures are formed by means of an anisotropic layer which is arranged on the electrically insulating layer and which is embodied in electrically conductive fashion at least in the region of the first contact area of the radiation-emitting semiconductor components.
  • The electrically conductive regions of the anisotropic layer are preferably formed by means of a printing method, a thermal method, or irradiation, for example by means of a UV laser.
  • Alternatively, the conductor structures can be integrated in a film that is laminated onto the electrically insulating film. In this case, the laminated-on film comprises conductive structures, for example metallizations. These conductive structures are preferably already arranged in the film in such a way as to enable electrical contact to be made with the radiation-emitting semiconductor components in an envisaged manner. Particularly preferably, an automatic contact-making method (TAB method: tape automated bonding) is employed for this purpose.
  • In one preferred configuration of the method, before the electrically insulating layer is applied, a planarization layer is introduced at least into the interspaces between the radiation-emitting semiconductor components. In this way, the module is planarized such that a module surface remote from the carrier substrate is embodied in a planar fashion.
  • In a further preferred configuration of the method, the conductive structures are in each case embodied as an electrically conductive web, wherein the webs are in each case electrically conductively connected to the first contact area of a radiation-emitting semiconductor component by means of a stamping-wedge process.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows a schematic cross section of a first exemplary embodiment of a module in one intermediate step of the production method,
  • FIG. 2 shows a schematic cross section of a further exemplary embodiment of a module according to the invention,
  • FIG. 3 shows a schematic cross section of one exemplary embodiment of a module according to the invention,
  • FIG. 4 shows a schematic excerpt from a further exemplary embodiment of a module according to the invention,
  • FIG. 5 shows a schematic excerpt from a further exemplary embodiment of a module according to the invention,
  • FIG. 6 shows a schematic cross section of a further exemplary embodiment of a module according to the invention,
  • FIG. 7A shows a schematic excerpt from a further exemplary embodiment of a module according to the invention,
  • FIG. 7B shows a schematic plan view of the excerpt from the exemplary embodiment from FIG. 7A, and
  • FIG. 7C shows a schematic plan view of a further exemplary embodiment of a module according to the invention.
    •  DETAILED DESCRIPTION OF THE DRAWINGS
  • Identical or identically acting constituent parts are in each case provided with the same reference symbols. The constituent parts illustrated and also the size relationships of the constituent parts among one another should not be regarded as true to scale.
  • FIG. 1 illustrates an optoelectronic module comprising a carrier substrate 1 and a plurality of radiation-emitting semiconductor components 2. The radiation-emitting semiconductor components 2 each comprise an active layer for generating electromagnetic radiation, a first contact area 21 and a second contact area 22. The first contact area 21 is arranged on that surface of the radiation-emitting semiconductor components 2 which is remote from the carrier substrate 1.
  • The radiation-emitting semiconductor components 2 are preferably embodied as semiconductor chips, particularly preferably in each case a light-emitting diode (LED).
  • The active layers of the radiation-emitting semiconductor components 2 each comprise a pn junction, a double heterostructure, a single quantum well structure or a multi quantum well structure for generating radiation. Preferably, the radiation-emitting semiconductor components 2 are in each case based on a nitride, phosphide or arsenide compound semiconductor.
  • The carrier substrate 1 has structured conductor tracks for making electrical contact with the radiation-emitting semiconductor components 2. In particular, preferably a radiation-emitting semiconductor component 2 is respectively arranged on a conductor track of the carrier substrate 1. That means that the second contact area 22 is in each case in mechanical and electrical contact with a conductor track of the carrier substrate 1.
  • Preferably, the conductor tracks on which a radiation-emitting semiconductor component 2 is respectively arranged are electrically insulated from one another. The radiation-emitting semiconductor components 2 are therefore arranged in a manner electrically insulated from one another on the conductor tracks of the carrier substrate 1.
  • Preferably, a planarization layer 3 is arranged between the individual radiation-emitting semiconductor components 2. A planar module surface remote from the carrier substrate 1 can advantageously be produced by virtue of the planarization layer 3. Preferably, the planarization layer 3 is electrically insulated; particularly preferably, the planarization layer 3 contains a dielectric material.
  • Preferably, the planarization layer 3 is based on silicone. In particular, the planarization layer 3 contains silicone. Additionally or alternatively, the planarization layer 3 can contain other polymers or inorganic materials.
  • The height of the planarization layer 3 can exceed the height of the radiation-emitting semiconductor components 2. In particular, the planarization layer 3 can be led beyond the height of the radiation-emitting semiconductor components 2, such that it runs at least partly over those surfaces of the radiation-emitting semiconductor components 2 which are remote from the carrier substrate 1. In particular, an improved electrical insulation of the radiation-emitting semiconductor components 2 is thereby ensured. In this case, the planarization layer 3 preferably consists of a material that is at least partly radiation-transmissive to the radiation emitted by the radiation-emitting semiconductor components 2.
  • The planarization layer 3 can furthermore contain at least one conversion element 6. Preferably, the conversion element 6 absorbs the radiation emitted by at least one of the radiation-emitting semiconductor components 2 and converts said radiation into radiation in a different wavelength range, such that mixed radiation of the radiation emitted by the module is generated.
  • Through a suitable choice of the conversion element 6, it is possible to effect a change in the color locus of the radiation emitted by the radiation-emitting semiconductor components 2. As a result, a desired color locus of the radiation emitted by the module can advantageously be obtained. Particularly preferably, the module emits radiation in the white color locus range.
  • Preferably, the radiation-emitting semiconductor components 2 are jointly surrounded by a frame 7 arranged on the carrier substrate 1.
  • The frame 7 preferably contains a ceramic or a plastic. In the exemplary embodiment from FIG. 1, the radiation-emitting semiconductor components 2 and the planarization layer 3 are spatially delimited from the surroundings by means of the frame 7. The frame 7 advantageously protects the radiation-emitting semiconductor components 2 against, for example, environmental influences such as impacts, for example.
  • An electrically insulating layer 4 is preferably at least partly arranged on the radiation-emitting semiconductor components 2 and on the planarization layer 3. The electrically insulating layer 4 has in each case a cutout in a region of the first contact area 21 of the radiation-emitting semiconductor components 2.
  • The electrically insulating layer 4 is preferably at least partly radiation-transmissive to the radiation of the radiation-emitting semiconductor components 2 which is emitted by the active layer. The radiation emitted by the radiation-emitting semiconductor components 2 can thus be coupled out through the electrically insulating layer 4 without significant optical losses being incurred in the process.
  • In the exemplary embodiments in FIGS. 1 to 7, the radiation coupling-out of the radiation emitted by the radiation-emitting semiconductor components 2 from the module is preferably effected on that side of the module which is remote from the carrier substrate 1.
  • The electrically insulating layer 4 is preferably a film, a resist or a polymer layer.
  • The electrically insulating layer 4 can, just like the planarization layer 3, contain at least one conversion element (not illustrated). The conversion element in the electrically insulating layer preferably at least partly absorbs radiation of the radiation emitted by the radiation-emitting semiconductor components 2 and emits a secondary radiation in a different wavelength range. As a result, the module emits mixed radiation containing both primary radiation of the radiation-emitting semiconductor components 2 and secondary radiation of the conversion element.
  • By virtue of the fact that the conversion element or the conversion elements is or are integrated directly in the electrically insulating layer 4 and/or in the planarization layer 3, advantageously no further additional optical layers are required. Optical layers are, for example, layers which alter and/or correct the color locus of the radiation emitted by the semiconductor components in a targeted manner. The radiation emitted by the semiconductor components 2 can thus advantageously be converted close to the semiconductor components 2. A compact module is made possible.
  • The electrically insulating layer 4 has cutouts in regions. Preferably, a cutout in the electrically insulating layer 4 is formed in each case in a region of the first contact area 21 of a radiation-emitting semiconductor component 2.
  • Preferably, the electrically insulating layer 4 is embodied in one piece.
  • On that surface of the module which is remote from the carrier substrate 1, conductive structures are arranged in regions on the electrically insulating layer 4 (not illustrated).
  • The module prior to application of the conductive structures is illustrated in the exemplary embodiment in FIG. 1. The module in exemplary embodiment 1 accordingly shows a module during the production process.
  • In the exemplary embodiment in FIG. 1, a stencil 5 is arranged on that side of the module which is remote from the carrier substrate 1. The stencil 5 is employed during the production step of applying the conductive structures.
  • The stencil 5 is used for the structuring of the conductive structures. In particular, the stencil 5 preferably has cutouts in the region of the cutouts of the electrically insulating layer 4.
  • The conductive structures are applied to the electrically insulating layer 4 or to the stencil 5 preferably by means of a printing method. By means of a printing method, in particular a screen printing or pad printing method, it is thus possible to apply a, preferably monolayer, conductive structure, in particular a metallization layer, for the interconnection of the radiation-emitting semiconductor components 2.
  • The structuring of the conductive structures is preferably formed by means of the stencil 5 such that the radiation-emitting semiconductor components 2 are electrically conductively connected to one another or to conductor tracks of the carrier body by means of the conductive structures in an envisaged manner. Consequently, the conductive structures electrically connect at least the first contact area of a radiation-emitting semiconductor component 2 to a further first contact area of a further radiation-emitting semiconductor component 2 or to a conductor track of the carrier substrate 1 (not illustrated).
  • After application of the conductive structures, the stencil 5 is removed. Therefore, the stencil 5 is arranged on the module only temporarily during the production process.
  • An exemplary embodiment of a finished module comprising conductive structures 8 is illustrated in the exemplary embodiment in FIG. 2.
  • In contrast to the exemplary embodiment illustrated in FIG. 1, the module from FIG. 2 does not have a frame arranged on the carrier substrate 1 and surrounding the radiation-emitting semiconductor components 2 and the planarization layer 3.
  • The radiation-emitting semiconductor components 2 are preferably fixed on the structured conductor tracks of the carrier substrate 1 by means of a solder or an electrically conductive adhesive.
  • As in the exemplary embodiment in FIG. 1, an electrically insulating layer 4 is applied on the radiation-emitting semiconductor components 2 and the planarization layer 3. The electrically insulating layer 4 has cutouts in regions of the first contact area 21 of the radiation-emitting semiconductor components 2. Said cutouts are preferably produced by means of a laser method or a lithography method.
  • In contrast to the exemplary embodiment from FIG. 1, the conductive structures 8 are applied to the electrically insulating layer 4 by means of a jet printing method, for example. The conductive structures 8 are preferably applied by means of a nozzle 9. The nozzle 9 writes the conductive structures, preferably monolayer metal tracks, onto that side of the module which is remote from the carrier substrate 1. In particular, the conductive structures 8 are applied on the electrically insulating layer 4 in such a way that the radiation-emitting semiconductor components 2 are electrically contact-connected among one another or to a conductor track of the carrier substrate 1. In particular, the conductive structures 8 are situated in each case in the region of the first contact area 21 of the radiation-emitting semiconductor components 2.
  • The radiation-emitting semiconductor components 2 can thus be grounded separately. Alternatively, the radiation-emitting semiconductor components 2 can be electrically conductively connected to one another.
  • The exemplary embodiment in FIG. 3 differs from the exemplary embodiment from FIG. 2 in that the carrier substrate 1 is a flexible substrate. In particular, that surface of the carrier substrate 1 on which the radiation-emitting semiconductor components 2 are arranged is non-planar. The carrier substrate 1 can have a curvature, for example. In particular, the surface of the carrier substrate 1 can also have other shapings as long as mounting of the radiation-emitting semiconductor components 2 is possible.
  • In particular, the module can be mounted in rotatable fashion in the exemplary embodiment in FIG. 3. This advantageously simplifies the production of the module, for example. During the method step of writing the conductive structures by means of a nozzle, the module can be moved, for example rotated, for example in accordance with a desired structuring of the conductive structures.
  • An excerpt from an optoelectronic module is illustrated in the exemplary embodiment in FIG. 4. In particular, only one radiation-emitting semiconductor component 2 of the module is illustrated. The further radiation-emitting semiconductor components of the module are not shown, for the sake of clarity.
  • On a carrier substrate 1, radiation-emitting semiconductor components 2 are preferably adhesively bonded by means of an adhesive layer or soldered by means of a solder. As illustrated in FIG. 4, an electrically insulating layer 4 is preferably arranged on the radiation-emitting semiconductor components 2 and on the carrier substrate 1. The electrically insulating layer 4 is, for example, a laminated-on film or a layer comprising glass.
  • The electrically insulating layer 4 has a cutout in the region of the first contact area 21 of the radiation-emitting semiconductor component 2. The electrically insulating layer 4 is preferably a dielectric layer.
  • Preferably, during the module production process, a conductive structure, particularly preferably a metal layer is deposited onto the electrically insulating layer 4 by means of vapor deposition over the whole area (not illustrated). Preferably, the whole-area conductive structure is deposited by means of physical or chemical vapor deposition. Afterward, the conductive structure formed over the whole area is structured, for example, by means of photolithography and etching in accordance with a desired interconnection of the radiation-emitting semiconductor components 2. In particular, the whole-area conductive structure is preferably structured such that the radiation-emitting semiconductor components are electrically conductively connected to one another or a radiation-emitting semiconductor component 2 is electrically conductively connected to a conductor track of the carrier substrate 1.
  • Preferably, for simplified and improved process implementation, the electrically insulating layer, in particular the dielectric layer, is planarized before the deposition of the conductive structure, for example by means of an SOG method.
  • An excerpt from a further optoelectronic module is illustrated in the exemplary embodiment concerning FIG. 5. In this case, too, only one radiation-emitting semiconductor component 2 is illustrated, for the sake of clarity.
  • In contrast to the exemplary embodiment illustrated in FIG. 4, the conductive structure 8 is formed by an anisotropic layer 8 a, 8 b. Preferably, the anisotropic layer 8 a, 8 b is an anisotropic film, which is preferably applied by lamination.
  • The anisotropic layer preferably has two partial regions 8 a, 8 b. One of the partial regions 8 a is preferably embodied in conductive fashion. Another partial region 8 b, by contrast, is electrically insulating.
  • The formation of the conductivity in the region 8 a of the anisotropic layer is preferably effected by means of a locally applied pressure or irradiation. An electrical connection of the radiation-emitting semiconductor component 2 in the region of the first contact area 21 is advantageously ensured as a result.
  • Preferably in the second partial region 8 b, the anisotropic layer 8 a, 8 b is at least partly radiation-transmissive to the radiation emitted by the radiation-emitting semiconductor component 2. Alternatively, the anisotropic layer 8 a, 8 b can be selectively removed in the second partial region 8 b after being applied by lamination. In this case, the anisotropic layer 8 a, 8 b need not be radiation-transmissive.
  • The exemplary embodiment of an optoelectronic module as illustrated in FIG. 6 comprises a plurality of radiation-emitting semiconductor components 2, which are fixed on a carrier substrate 1 by means of a solder or an adhesive layer 10. Preferably, second contact areas 22 of the radiation-emitting semiconductor components 2 are in electrical contact with conductor tracks arranged on the carrier substrate 1. The conductor tracks of the radiation-emitting semiconductor components 2 are preferably arranged in a manner electrically insulated from one another.
  • In contrast to the modules illustrated in the previous exemplary embodiments, in the exemplary embodiment in FIG. 6, the electrically insulating layer 4 is formed by a structured circuit board and the conductive structures 8 are formed by electrically conductive webs, for example metal webs, projecting from the circuit board.
  • The circuit board comprises, in particular, an electrically insulating material with electrically conductive conductor tracks contained therein. Particularly preferably, the electrically insulating material of the circuit board is at least partly radiation-transmissive to the radiation emitted by the radiation-emitting semiconductor components 2. The electrically insulating material of the circuit board can furthermore contain at least one conversion element in order to convert the radiation emitted by the radiation-emitting semiconductor components 2.
  • The conductor tracks contained in the electrically insulating material of the circuit board are preferably at least partly electrically conductively connected to the metal webs 8. Furthermore, the metal webs 8 are in each case preferably electrically conductively connected to the first contact area 21 of a radiation-emitting semiconductor component 2. For this purpose, the circuit board 4 has in each case a cutout in the region of the first contact area 21 of a radiation-emitting semiconductor component 2.
  • The radiation-emitting semiconductor components 2 are in each case electrically contact-connected by means of the webs 8 and by means of the conductor tracks of the circuit board 4. In this case, the radiation-emitting semiconductor components 2 can be electrically conductively connected to one another or electrically conductively connected respectively to a conductor track of the carrier substrate 1.
  • The metal webs 8 are preferably shaped such that they are curved from the contact location of the circuit board in the direction of the radiation-emitting semiconductor components 2.
  • In this exemplary embodiment, it is also possible for a plurality of circuit boards to be arranged one above another, such that a multilayered arrangement and hence multilayered interconnection planes are formed in the module (not illustrated).
  • The metal webs 8 can, for example, in each case be electrically and mechanically connected to the first contact area 21 of the radiation-emitting semiconductor components 2 by means of a stamping-wedge process.
  • FIGS. 7A and 7B each illustrate a schematic excerpt from an optoelectronic module. FIG. 7A illustrates a cross section of an excerpt from a module. FIG. 7B shows in this respect a plan view of the excerpt from FIG. 7A.
  • FIG. 7A shows a radiation-emitting semiconductor component 2. An optoelectronic module is preferably composed of a plurality of radiation-emitting semiconductor components 2, which is illustrated in FIG. 7A, for example, wherein the radiation-emitting semiconductor components 2 are preferably arranged on a carrier substrate 1.
  • The radiation-emitting semiconductor component 2 from FIG. 7A comprises, in contrast to the exemplary embodiments in FIGS. 1 to 6, a first contact area 21 that is led on the electrically insulating layer 4. For this purpose, the electrically insulating layer 4 is led in each case in regions at the side areas of the radiation-emitting semiconductor component 2 around the respective radiation-emitting semiconductor component 2. Preferably, the electrically insulating layer 4 is led at the side areas of the radiation-emitting semiconductor component 2 over the active layer 2 a of the semiconductor component 2.
  • Preferably, the first contact layer 21 is likewise led at the side area of the semiconductor component 2. In particular, the first contact layer 21 is led on the electrically insulating layer 4. In this case, that surface of the radiation-emitting semiconductor component 2 which is remote from the carrier substrate is preferably free of the first contact area 21.
  • By virtue of the first contact layer 21 being led along the side areas of the semiconductor component 2, a homogeneous energization of the radiation-emitting semiconductor component 2 can be ensured.
  • Preferably, a region of the first contact layer 21 is adjoined by an electrical lead 12. By virtue of the first contact layer 21 being led along the side areas of the semiconductor component 2, electrical leads 12 for the electrical interconnection of the semiconductor components 2 can be led at any desired regions of the first contact layer 21. The semiconductor components of a module can thus be electrically interconnected with one another by means of the leads 12. Alternatively, the semiconductor components can be electrically connected separately from one another.
  • FIG. 7B illustrates a plan view of the contact routing of a semiconductor component from FIG. 7A. The first contact layer 21 is in this case arranged laterally with respect to a radiation coupling-out area of the semiconductor component 2. Preferably, the first contact layer 21 is embodied in a frame-type fashion. In particular, the first contact layer 21 forms a closed track. An electrical lead 12 serving for the interconnection of the semiconductor component 2 is arranged in regions at the first contact layer 21.
  • Preferably, in the exemplary embodiments in FIGS. 7A, 7B, a current distributing layer 13 is arranged on the radiation-emitting semiconductor component 2. In particular, the current distributing layer 13 is at least partly radiation-transmissive to the radiation emitted by the semiconductor component 2. By way of example, the current distributing layer 13 is an ITO layer or a ZnO layer.
  • The first contact layer 21 is preferably a metallization. The radiation coupling-out area of the semiconductor component 2 is preferably free of the metallization. Preferably, the metallization is led around the semiconductor component 2, thereby ensuring a more homogeneous energization than, for example, by bonding pads conventionally used.
  • FIG. 7C illustrates a plan view of a module comprising a plurality of radiation-emitting semiconductor components 2 from FIG. 7A. In this case, the module comprises four radiation-emitting semiconductor components 2. However, an alternative number of semiconductor components 2 is possible, depending on the respective application areas and intended uses of the module.
  • By virtue of the laterally arranged electrical routing of the first contact area 21 of the semiconductor components 2, a complex interconnection of the semiconductor components 2 is made possible. A space-saving arrangement of the semiconductor components 2 on the carrier substrate 1 is advantageously possible as a result.
  • In particular, there is the possibility of mounting the semiconductor components 2 individually onto the carrier substrate 1 and electrically conductively connecting them separately from one another. In this case, the carrier substrate 1 has on the mounting side for the semiconductor components 2 in each case conductor tracks which are electrically insulated from one another and on which a semiconductor component is in each case mechanically and electrically connected.
  • Alternatively, the semiconductor components 2 can be electrically interconnected with one another. In this case, preferably the carrier substrate 1 itself is embodied in electrically conductive fashion, such that the semiconductor components 2 are at a common electrical potential. Alternatively, a conductor track on which the semiconductor components 2 are jointly arranged can be arranged on the carrier substrate 1. The electrical leads 12 of the semiconductor components 2 are preferably led to a further electrical connection (not illustrated).
  • The invention is not restricted to the exemplary embodiments by the description on the basis of said exemplary embodiments, but rather encompasses any novel feature and also any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments.

Claims (5)

What is claimed is:
1. A method for producing an optoelectronic module comprising:
arranging a plurality of radiation-emitting semiconductor components on a carrier substrate, wherein the carrier substrate has structured conductor tracks for making electrical contact with the radiation-emitting semiconductor components, the radiation-emitting semiconductor components each comprise an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area, and the first contact area is in each case arranged on that side of the radiation-emitting semiconductor components remote from the carrier substrate;
arranging a planarization layer at least between the radiation-emitting semiconductor components;
applying a first part of an electrically insulating layer to at least part of the radiation-emitting semiconductor components and a second part of the electrically insulating layer to at least part of the planarization layer, wherein the electrically insulating layer has a cutout in the region of the first contact area of the respective radiation-emitting semiconductor component; and
applying conductive structures to partial regions of the electrically insulating layer, wherein one of the conductive structures electrically conductively connects at least the first contact area of a radiation-emitting semiconductor component to another first contact area of another radiation-emitting semiconductor component or to a conductor track of the carrier substrate.
2. The method according to claim 1, comprising applying the conductive structures by printing.
3. The method according to claim 1, comprising applying the conductive structures by vapor deposition.
4. The method according to claim 1, comprising forming the conductive structures by arranging an anisotropic layer on the electrically insulating layer in electrically conductive fashion at least in the region of the first contact area of the radiation-emitting semiconductor components.
5. The method according to claim 1, wherein the conductive structures comprise electrically conductive webs, the method comprising electrically conductively applying the webs to the first contact area of a radiation-emitting semiconductor component by a stamping-wedge process.
US13/911,798 2008-09-26 2013-06-06 Optoelectronic Module Having a Carrier Substrate and a Plurality of Radiation-Emitting Semiconductor Components and Method for the Production Thereof Abandoned US20140030829A1 (en)

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Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
WO2011145794A1 (en) 2010-05-18 2011-11-24 서울반도체 주식회사 Light emitting diode chip having wavelength conversion layer and manufacturing method thereof, and package including same and manufacturing method thereof
DE102010044560A1 (en) * 2010-09-07 2012-03-08 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor component
DE102011055549A1 (en) 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component with a wireless contacting
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EP2830094B1 (en) * 2013-07-22 2020-02-26 LG Innotek Co., Ltd. Light emitting device
KR101503403B1 (en) * 2013-09-09 2015-03-17 삼성디스플레이 주식회사 Light emitting module and method for manufacturing the same
US9195358B1 (en) * 2014-04-16 2015-11-24 Eastman Kodak Company Z-fold multi-element substrate structure
DE102016208431A1 (en) * 2016-05-17 2017-11-23 Osram Opto Semiconductors Gmbh Arrangement with an electrical component
DE102018120637A1 (en) * 2018-08-23 2020-02-27 Osram Opto Semiconductors Gmbh CIRCUIT BOARD AND METHOD FOR PRODUCING A CIRCUIT BOARD WITH AT LEAST ONE OPTOELECTRONIC COMPONENT INTEGRATED INTO THE CIRCUIT BOARD
DE102019100794A1 (en) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh LASER DEVICE AND METHOD FOR PRODUCING A LASER DEVICE
KR20210072194A (en) * 2019-12-06 2021-06-17 삼성디스플레이 주식회사 Method for aligning a light emitting element, method for fabricating a display device using the same and display device

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575356A (en) * 1980-06-13 1982-01-12 Toshiba Corp Hybrid integrated circuit device
JPS575359A (en) * 1980-06-11 1982-01-12 Hitachi Ltd Semiconductor device
US5878485A (en) * 1991-06-04 1999-03-09 Micron Technologoy, Inc. Method for fabricating a carrier for testing unpackaged semiconductor dice
US20030067071A1 (en) * 2001-10-10 2003-04-10 International Rectifier Corporation Semiconductor device package with improved cooling
US6634100B2 (en) * 2000-03-23 2003-10-21 Micron Technology, Inc. Interposer and methods for fabricating same
US20050244608A1 (en) * 2002-08-08 2005-11-03 Dai Nippon Printing Co., Ltd. Electromagnetic wave shielding sheet
US20060124953A1 (en) * 2004-12-14 2006-06-15 Negley Gerald H Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same
US20070026567A1 (en) * 2005-06-01 2007-02-01 Gottfried Beer Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof
US20070263408A1 (en) * 2006-05-09 2007-11-15 Chua Janet Bee Y Backlight module and method of making the module
US20080116537A1 (en) * 2006-11-17 2008-05-22 Adkisson James W Cmos imager array with recessed dielectric
US7563658B2 (en) * 2004-12-27 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7858994B2 (en) * 2006-06-16 2010-12-28 Articulated Technologies, Llc Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
US20120182466A1 (en) * 2008-09-10 2012-07-19 Panasonic Corporation Camera body and imaging device

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55120081A (en) * 1979-03-08 1980-09-16 Tokyo Shibaura Electric Co Led display unit
JPS61290780A (en) 1985-06-19 1986-12-20 Hitachi Vlsi Eng Corp Photoelectric conversion device
JPH0723827Y2 (en) * 1989-06-12 1995-05-31 株式会社小糸製作所 Light source for display device
JP2581083Y2 (en) * 1991-05-28 1998-09-17 三洋電機株式会社 Light emitting diode display
JPH0832112A (en) * 1994-07-20 1996-02-02 Toyoda Gosei Co Ltd Group iii nitride semiconductor light emitting element
DE19638667C2 (en) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
DE10051159C2 (en) * 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED module, e.g. White light source
WO2003012884A1 (en) 2001-08-01 2003-02-13 Nam-Young Kim Display system
JP3782411B2 (en) * 2002-09-02 2006-06-07 松下電器産業株式会社 Light emitting device
DE10245945A1 (en) * 2002-09-30 2004-04-08 Osram Opto Semiconductors Gmbh Light source module and method for its production
DE10353679A1 (en) 2003-11-17 2005-06-02 Siemens Ag Cost-effective, miniaturized assembly and connection technology for LEDs and other optoelectronic modules
EP1700344B1 (en) * 2003-12-24 2016-03-02 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light emitting device and lighting module
DE102004021233A1 (en) * 2004-04-30 2005-12-01 Osram Opto Semiconductors Gmbh LED array
US20060035036A1 (en) * 2004-08-16 2006-02-16 Telephus Inc. Anisotropic conductive adhesive for fine pitch and COG packaged LCD module
DE102004050371A1 (en) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelectronic component with a wireless contact
TWI277222B (en) * 2004-10-29 2007-03-21 Lighthouse Technology Co Ltd LED module and method of packing the same
US7821023B2 (en) * 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
WO2006083065A1 (en) * 2005-02-04 2006-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
KR101047683B1 (en) 2005-05-17 2011-07-08 엘지이노텍 주식회사 Light emitting device packaging method that does not require wire bonding
JP2008544540A (en) * 2005-06-22 2008-12-04 ソウル オプト デバイス カンパニー リミテッド Light emitting device and manufacturing method thereof
KR100599012B1 (en) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 Light emitting diode having a thermal conductive substrate and method of fabricating the same
TWI285442B (en) * 2005-08-29 2007-08-11 Gigno Technology Co Ltd Package structure of light emitting diode
US8039849B2 (en) * 2005-11-23 2011-10-18 Taiwan Oasis Technology Co., Ltd. LED module
JP2007158262A (en) * 2005-12-08 2007-06-21 Rohm Co Ltd Method of manufacturing semiconductor light-emitting element
TWI331406B (en) * 2005-12-14 2010-10-01 Advanced Optoelectronic Tech Single chip with multi-led
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
US8350279B2 (en) * 2006-09-25 2013-01-08 Seoul Opto Device Co., Ltd. Light emitting diode having AlInGaP active layer and method of fabricating the same
US20080117619A1 (en) * 2006-11-21 2008-05-22 Siew It Pang Light source utilizing a flexible circuit carrier and flexible reflectors
DE102007009351A1 (en) * 2007-02-23 2008-08-28 Noctron Holding S.A. Lamp
DE102007011123A1 (en) * 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Light-emitting module and method of manufacturing a light-emitting module
US8058669B2 (en) * 2008-08-28 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode integration scheme

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575359A (en) * 1980-06-11 1982-01-12 Hitachi Ltd Semiconductor device
JPS575356A (en) * 1980-06-13 1982-01-12 Toshiba Corp Hybrid integrated circuit device
US5878485A (en) * 1991-06-04 1999-03-09 Micron Technologoy, Inc. Method for fabricating a carrier for testing unpackaged semiconductor dice
US6634100B2 (en) * 2000-03-23 2003-10-21 Micron Technology, Inc. Interposer and methods for fabricating same
US20030067071A1 (en) * 2001-10-10 2003-04-10 International Rectifier Corporation Semiconductor device package with improved cooling
US20050244608A1 (en) * 2002-08-08 2005-11-03 Dai Nippon Printing Co., Ltd. Electromagnetic wave shielding sheet
US20060124953A1 (en) * 2004-12-14 2006-06-15 Negley Gerald H Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same
US7563658B2 (en) * 2004-12-27 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20070026567A1 (en) * 2005-06-01 2007-02-01 Gottfried Beer Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof
US20070263408A1 (en) * 2006-05-09 2007-11-15 Chua Janet Bee Y Backlight module and method of making the module
US7858994B2 (en) * 2006-06-16 2010-12-28 Articulated Technologies, Llc Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
US20080116537A1 (en) * 2006-11-17 2008-05-22 Adkisson James W Cmos imager array with recessed dielectric
US20120182466A1 (en) * 2008-09-10 2012-07-19 Panasonic Corporation Camera body and imaging device

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