US20140174356A1 - Substrate supporting unit and substrate processing apparatus manufacturing method of the substrate supporting unit - Google Patents
Substrate supporting unit and substrate processing apparatus manufacturing method of the substrate supporting unit Download PDFInfo
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- US20140174356A1 US20140174356A1 US14/234,723 US201214234723A US2014174356A1 US 20140174356 A1 US20140174356 A1 US 20140174356A1 US 201214234723 A US201214234723 A US 201214234723A US 2014174356 A1 US2014174356 A1 US 2014174356A1
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- susceptor
- substrate
- heat absorbing
- supporting unit
- absorbing members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49764—Method of mechanical manufacture with testing or indicating
Definitions
- the present invention disclosed herein relates to a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit, and more particularly, to a substrate support unit which enables a susceptor to have a uniform temperature distribution and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit.
- Semiconductor manufacturing processes include a deposition process or an etching process which is performed on a wafer.
- a wafer is heated at a temperature of about 500° C. to about 700° C. by a resistance heater or a lamp heater in a state where the wafer is loaded on a susceptor formed of a ceramic or metal material.
- the present invention provides a substrate supporting unit which can uniformly adjust a temperature distribution on a wafer and a substrate process apparatus, and a method of manufacturing the substrate supporting unit.
- the present invention also provides a substrate supporting unit which can uniformly adjust a temperature distribution on a susceptor and a substrate process apparatus, and a method of manufacturing the substrate supporting unit.
- Embodiments of the present invention provide substrate supporting units including: a susceptor on which a substrate is placed on a top surface thereof; one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position; and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
- the susceptor may have a central region in which the substrate is disposed and an edge region defined around the substrate, and the heat absorbing members may be disposed along the edge region at the mounted position.
- the edge ring may have a ring shape and be disposed along the edge region of the susceptor, and the fixing slots may be penetrated in radius directions of the susceptor.
- the heat absorbing members may have thermal contact surfaces thermally contacting the susceptor, and the thermal contact surfaces may have different areas.
- each of the heat absorbing members may be formed of a material including one of aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN).
- substrate processing apparatuses include: a chamber providing an inner space in which processes are performed on a substrate; a substrate supporting unit disposed within the chamber to support the substrate; and a showerhead supplying a process gas onto a top surface of the substrate supported by the substrate supporting unit, wherein the substrate supporting unit includes: a susceptor on which a substrate is placed on a top surface thereof; one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position; and an edge ring having a ring shape and disposed along a sidewall of the chamber, the edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
- methods of manufacturing a substrate supporting unit including a susceptor, on which a substrate is placed include: measuring a temperature distribution of the susceptor to determine one or more high temperature regions, each having a high temperature greater than a reference temperature, of the substrate; disposing an edge ring having a plurality of fixing slots on the substrate; and selectively inserting and fixing heat absorbing members into the fixing slots respectively corresponding to the high temperature regions to adjust the temperature distribution of the susceptor.
- FIG. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention
- FIG. 2 is a perspective view of an edge ring of FIG. 1 ;
- FIG. 3 is a view of a heat absorbing member of FIG. 1 ;
- FIG. 4 is a view illustrating a process in which the heat absorbing member is selectively inserted into the edge ring of FIG. 1 ;
- FIG. 5 and FIG. 6 are views illustrating a substrate processing apparatus according to another embodiment of the present invention.
- FIGS. 1 to 6 exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 to 6 .
- the present invention may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.
- the shapes of components are exaggerated for clarity of illustration.
- the present invention may be applicable to various substrate processing apparatuses including a substrate supporting unit. Also, although a wafer W is exemplified below, the present invention may be applicable to various objects to be processed.
- FIG. 1 is a schematic view of a substrate processing apparatus 100 according to an embodiment of the present invention.
- the substrate processing apparatus 100 is an apparatus for depositing a layer.
- the substrate processing apparatus 100 includes a chamber 11 having a cylindrical shape.
- a susceptor 12 having a circular plate shape and horizontally supporting the wafer W is disposed within the chamber 11 .
- the susceptor 12 is supported by a supporting member 13 .
- the susceptor 12 may be formed of a ceramic material such as aluminum oxide (Al 2 O 3 ) or aluminum nitride (AlN).
- a heater 15 is installed within the susceptor 12 .
- the heater 15 includes a coil type heater or a pattern heater.
- the heater 15 heats the susceptor 12 using a power supplied from the outside.
- the wafer W is heated at a predetermined temperature by the heater 15 .
- the susceptor 12 may include a thermocouple (not shown).
- the thermocouple may detect a temperature of the susceptor 12 to control the temperature of the susceptor 12 .
- the integrated heater 15 is exemplified in the current embodiment, the heater 15 may be divided into a plurality of parts to separately heat regions of the susceptor 12 .
- a showerhead 60 is installed on a ceiling within the chamber 11 .
- the showerhead 60 supplies process gases supplied from a gas supply line 62 onto the susceptor 12 .
- the gas supply line 62 is opened or closed by a valve 62 a.
- a high frequency power source is connected to the showerhead 60 .
- a high frequency power having a predetermined frequency may be supplied into the showerhead 60 from the high frequency power source.
- An exhaust hole 16 is defined in the bottom of the chamber 11 .
- the process gases and reaction byproducts may be discharged to the outside through the exhaust hole 16 .
- the inside of the chamber 11 may be decompressed up to a predetermined vacuum degree through the exhaust hole 16 .
- a passage 42 through which the wafer W is loaded or unloaded and a gate valve 43 for opening or closing the passage 42 are disposed in a sidewall of the chamber 11 .
- FIG. 2 is a perspective view of the edge ring of FIG. 1 .
- the edge ring 20 has a ring shape.
- the edge ring 20 is disposed on the upper portion of the susceptor 12 along an edge region of the susceptor 12 . That is, the wafer W is placed on a central region of the susceptor 12 , and the edge ring 20 is disposed on the edge region defined around the wafer W.
- the edge ring 20 has a plurality of fixing slots 23 .
- the fixing slots 23 pass in a radius direction of the edge ring 20 .
- the fixing slots 23 are divided by a plurality of partition walls 22 . Each of the fixing slots 23 may be adjusted in size (or width) according to positions of the partition walls 22 .
- the heat absorbing member 30 is inserted into the edge ring 20 .
- the heat absorbing member 30 is fixedly inserted into one of the fixing slots 23 of the edge ring 20 to thermally contact a top surface of the susceptor 12 (“mounted position”).
- the thermal contact means that heat can be transmitted into the heat absorbing member 30 . That is, the thermal contact means that the heat absorbing member 30 directly contacts the top surface of the susceptor 12 or indirectly contacts the top surface of the susceptor 12 through a separate medium.
- the heat absorbing member 30 is disposed on a specific region of the susceptor 12 to absorb heat with the specific region.
- a temperature of the specific region measured after the heat absorbing member 30 is installed is lower than that of the specific region measured before the heat absorbing member 30 is installed. That is, the heat absorbing member 30 may act as a thermal loss with respect to the susceptor 12 .
- the susceptor 12 may be adjusted to have a uniform temperature distribution.
- FIG. 3 is a view of the heat absorbing member of FIG. 1 .
- the heat absorbing member 30 has a thermal contact surface having a rainbow shape with an outer radius R and an inner radius r. The thermal contact surface thermally contacts the top surface of the susceptor 12 .
- a central angle ⁇ of the heat absorbing member 30 may be determined according to the size (or the width) of each of the fixing slots 23 .
- a contact distance d of the heat absorbing member 30 may be obtained through a difference between the outer radius R and the inner radius r. The contact distance d of the heat absorbing member 30 may be a factor which determines an area of the heat absorbing member 30 .
- the area of the heat absorbing member 30 may be a factor which determines a quantity of heat absorbed from the susceptor 12 .
- the area of the heat absorbing member 30 may be obtained through the outer radius R, the inner radius r, and the central angle ⁇ .
- a quantity of heat absorbed into the heat absorbing member 30 from the susceptor 12 is substantially proportional to the area of the heat absorbing member 30 .
- the heat absorbing member 30 of FIG. 4 may be modified in various shapes. Therefore, the heat absorbing member 30 having various shapes may be provided.
- the heat absorbing member 30 may be formed of the same material as the susceptor 12 .
- the heat absorbing member 30 may be formed of one of aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN).
- Al 2 O 3 aluminum oxide
- AlN aluminum nitride
- the heat absorbing member 30 includes a support guide 32 .
- the support guide 32 prevents the heat absorbing member 30 from being excessively inserted into the susceptor 12 .
- FIG. 4 is a view illustrating a process in which the heat absorbing member is selectively inserted into the edge ring of FIG. 1 .
- a method for adjusting a temperature distribution of the susceptor using the heat absorbing member will be described with reference to FIG. 4 .
- a worker measures a temperature distribution of the susceptor 12 . Then, the worker may confirm at least one high temperature region having a temperature greater than a reference temperature through the measured temperature distribution.
- the reference temperature may be set to a minimum temperature of the measured temperatures or set to a mean temperature of the measured temperatures.
- the temperature distribution of the susceptor 12 may be measured in a state where the edge ring 20 is disposed on the susceptor 12 .
- the worker may insert the heat absorbing member 30 into the fixing slot 23 corresponding to the confirmed high temperature region.
- a shape (or an area) of the heat absorbing member 30 may be determined in proportion to a temperature deviation (a difference between the high temperature and the reference temperature) in the high temperature region.
- An area of the heat absorbing member 30 may be determined according to contact distances d 1 , d 2 , and d 3 .
- the heat absorbing member 30 is inserted into the fixing slot 23 inward from the outside of the edge ring 20 .
- the support guide 32 prevents the heat absorbing member 30 from being excessively inserted.
- the heat absorbing member 30 In the state where the heat absorbing member 30 is inserted into the fixing slot 23 , the heat absorbing member 30 contacts the top surface of the susceptor 12 to absorb heat of the susceptor 12 , thereby reducing a temperature of a corresponding region of the susceptor 12 . As shown in FIG. 4 , the heat absorbing member 30 is not inserted into the fixing slots corresponding to regions of the susceptor 12 , each having temperatures less than the reference temperature. Here, the heat absorbing member 30 is separated from the edge ring 20 (“a released position”).
- the edge ring 20 includes eight fixing slots 23 in the current embodiment, the present invention is not limited thereto.
- the number of fixing slots may be increased to accurately adjust the temperature distribution of the susceptor 12 .
- the temperature distribution of the susceptor 12 may be more accurately adjusted through the sixteen fixing slots 23 .
- the temperature distribution of the susceptor 12 may be easily adjusted. Also, as described above, although it is necessary to uniformly adjust a temperature distribution of the susceptor 12 so as to secure the process uniformity, the temperature distribution of the susceptor 12 may be affected by external conditions (a shape of the chamber, a position of the passage, and the like). Thus, it is impossible to manufacture a susceptor which can have a uniform temperature distribution when the susceptor 12 is initially manufactured.
- the heat absorbing member 30 having various sizes may be fixedly inserted into the fixing slot 23 of the edge ring 20 after the edge ring 20 is disposed on the susceptor 12 to effectively adjust the temperature distribution of the susceptor 12 , thereby minimizing a time and cost required for adjusting the temperature distribution of the susceptor 12 .
- a nonuniform temperature distribution may be minimized through the heat absorbing member 30 .
- the substrate processing apparatus may be effectively utilized for various processes.
- FIG. 5 and FIG. 6 are views illustrating a substrate processing apparatus according to another embodiment of the present invention.
- the edge ring 20 is disposed on the upper portion of the susceptor 12 .
- an edge ring 50 may be disposed along a sidewall of a chamber 11 and spaced apart from a top surface of a susceptor 12 .
- a heat absorbing member 30 may be fixedly inserted into the edge ring 50 .
- the susceptor 12 may ascend to perform a process.
- the heat absorbing member 30 is maintained in thermal contact with the top surface of the susceptor 12 .
- the heat absorbing member 30 may absorb heat of a corresponding region of the susceptor 12 through the same method as that of the foregoing embodiment to adjust a temperature distribution of the susceptor 12 .
- contact distances d 1 and d 2 (or areas) of the heat absorbing member 30 may be different from each other according to a quantity of heat to be absorbed from the susceptor 12 .
Abstract
Provided are a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor on which a substrate is placed on a top surface thereof, one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position, and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
Description
- This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 of Korean Patent Application No. 10-2011-0096730, filed on Sep. 26, 2011, the entire contents of which is hereby incorporated by reference.
- The present invention disclosed herein relates to a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit, and more particularly, to a substrate support unit which enables a susceptor to have a uniform temperature distribution and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit.
- Semiconductor manufacturing processes include a deposition process or an etching process which is performed on a wafer. When the deposition or etching process is performed, a wafer is heated at a temperature of about 500° C. to about 700° C. by a resistance heater or a lamp heater in a state where the wafer is loaded on a susceptor formed of a ceramic or metal material.
- In this case, to secure process uniformity, it is necessary to uniformly distribute a temperature on the wafer. For this, it may be necessary to uniformly adjust a temperature distribution of a susceptor.
- The present invention provides a substrate supporting unit which can uniformly adjust a temperature distribution on a wafer and a substrate process apparatus, and a method of manufacturing the substrate supporting unit.
- The present invention also provides a substrate supporting unit which can uniformly adjust a temperature distribution on a susceptor and a substrate process apparatus, and a method of manufacturing the substrate supporting unit.
- Further another object of the present invention will become evident with reference to following detailed descriptions and accompanying drawings.
- Embodiments of the present invention provide substrate supporting units including: a susceptor on which a substrate is placed on a top surface thereof; one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position; and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
- In some embodiments, the susceptor may have a central region in which the substrate is disposed and an edge region defined around the substrate, and the heat absorbing members may be disposed along the edge region at the mounted position.
- In other embodiments, the edge ring may have a ring shape and be disposed along the edge region of the susceptor, and the fixing slots may be penetrated in radius directions of the susceptor.
- In still other embodiments, the heat absorbing members may have thermal contact surfaces thermally contacting the susceptor, and the thermal contact surfaces may have different areas.
- In even other embodiments, each of the heat absorbing members may be formed of a material including one of aluminum oxide (Al2O3) and aluminum nitride (AlN).
- In other embodiments of the present invention, substrate processing apparatuses include: a chamber providing an inner space in which processes are performed on a substrate; a substrate supporting unit disposed within the chamber to support the substrate; and a showerhead supplying a process gas onto a top surface of the substrate supported by the substrate supporting unit, wherein the substrate supporting unit includes: a susceptor on which a substrate is placed on a top surface thereof; one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position; and an edge ring having a ring shape and disposed along a sidewall of the chamber, the edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
- In still other embodiments of the present invention, methods of manufacturing a substrate supporting unit including a susceptor, on which a substrate is placed, include: measuring a temperature distribution of the susceptor to determine one or more high temperature regions, each having a high temperature greater than a reference temperature, of the substrate; disposing an edge ring having a plurality of fixing slots on the substrate; and selectively inserting and fixing heat absorbing members into the fixing slots respectively corresponding to the high temperature regions to adjust the temperature distribution of the susceptor.
- The accompanying drawings are included to provide a further understanding of the present invention, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the present invention and, together with the description, serve to explain principles of the present invention. In the drawings:
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FIG. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention; -
FIG. 2 is a perspective view of an edge ring ofFIG. 1 ; -
FIG. 3 is a view of a heat absorbing member ofFIG. 1 ; -
FIG. 4 is a view illustrating a process in which the heat absorbing member is selectively inserted into the edge ring ofFIG. 1 ; and -
FIG. 5 andFIG. 6 are views illustrating a substrate processing apparatus according to another embodiment of the present invention. - Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to
FIGS. 1 to 6 . The present invention may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. In the drawings, the shapes of components are exaggerated for clarity of illustration. - Although a deposition device is exemplified below, the present invention may be applicable to various substrate processing apparatuses including a substrate supporting unit. Also, although a wafer W is exemplified below, the present invention may be applicable to various objects to be processed.
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FIG. 1 is a schematic view of asubstrate processing apparatus 100 according to an embodiment of the present invention. Thesubstrate processing apparatus 100 is an apparatus for depositing a layer. Thesubstrate processing apparatus 100 includes achamber 11 having a cylindrical shape. Asusceptor 12 having a circular plate shape and horizontally supporting the wafer W is disposed within thechamber 11. Thesusceptor 12 is supported by a supportingmember 13. For example, thesusceptor 12 may be formed of a ceramic material such as aluminum oxide (Al2O3) or aluminum nitride (AlN). - A
heater 15 is installed within thesusceptor 12. Theheater 15 includes a coil type heater or a pattern heater. Theheater 15 heats thesusceptor 12 using a power supplied from the outside. The wafer W is heated at a predetermined temperature by theheater 15. Thesusceptor 12 may include a thermocouple (not shown). The thermocouple may detect a temperature of thesusceptor 12 to control the temperature of thesusceptor 12. Although the integratedheater 15 is exemplified in the current embodiment, theheater 15 may be divided into a plurality of parts to separately heat regions of thesusceptor 12. - A
showerhead 60 is installed on a ceiling within thechamber 11. Theshowerhead 60 supplies process gases supplied from agas supply line 62 onto thesusceptor 12. Here, thegas supply line 62 is opened or closed by avalve 62 a. A high frequency power source is connected to theshowerhead 60. As needed, a high frequency power having a predetermined frequency may be supplied into theshowerhead 60 from the high frequency power source. - An
exhaust hole 16 is defined in the bottom of thechamber 11. The process gases and reaction byproducts may be discharged to the outside through theexhaust hole 16. Also, the inside of thechamber 11 may be decompressed up to a predetermined vacuum degree through theexhaust hole 16. Apassage 42 through which the wafer W is loaded or unloaded and agate valve 43 for opening or closing thepassage 42 are disposed in a sidewall of thechamber 11. - An
edge ring 20 is disposed on an upper portion of thesusceptor 12.FIG. 2 is a perspective view of the edge ring ofFIG. 1 . Referring toFIG. 2 , theedge ring 20 has a ring shape. Also, theedge ring 20 is disposed on the upper portion of thesusceptor 12 along an edge region of thesusceptor 12. That is, the wafer W is placed on a central region of thesusceptor 12, and theedge ring 20 is disposed on the edge region defined around the wafer W. Theedge ring 20 has a plurality offixing slots 23. Thefixing slots 23 pass in a radius direction of theedge ring 20. Thefixing slots 23 are divided by a plurality ofpartition walls 22. Each of the fixingslots 23 may be adjusted in size (or width) according to positions of thepartition walls 22. - As shown in
FIG. 1 , theheat absorbing member 30 is inserted into theedge ring 20. Theheat absorbing member 30 is fixedly inserted into one of the fixingslots 23 of theedge ring 20 to thermally contact a top surface of the susceptor 12 (“mounted position”). The thermal contact means that heat can be transmitted into theheat absorbing member 30. That is, the thermal contact means that theheat absorbing member 30 directly contacts the top surface of thesusceptor 12 or indirectly contacts the top surface of thesusceptor 12 through a separate medium. - The
heat absorbing member 30 is disposed on a specific region of thesusceptor 12 to absorb heat with the specific region. Thus, when thesusceptor 12 is heated in the same manner through theheater 15, a temperature of the specific region measured after theheat absorbing member 30 is installed is lower than that of the specific region measured before theheat absorbing member 30 is installed. That is, theheat absorbing member 30 may act as a thermal loss with respect to thesusceptor 12. As a result, thesusceptor 12 may be adjusted to have a uniform temperature distribution. -
FIG. 3 is a view of the heat absorbing member ofFIG. 1 . Referring toFIG. 3 , theheat absorbing member 30 has a thermal contact surface having a rainbow shape with an outer radius R and an inner radius r. The thermal contact surface thermally contacts the top surface of thesusceptor 12. A central angle θ of theheat absorbing member 30 may be determined according to the size (or the width) of each of the fixingslots 23. A contact distance d of theheat absorbing member 30 may be obtained through a difference between the outer radius R and the inner radius r. The contact distance d of theheat absorbing member 30 may be a factor which determines an area of theheat absorbing member 30. Also, the area of theheat absorbing member 30 may be a factor which determines a quantity of heat absorbed from thesusceptor 12. The area of theheat absorbing member 30 may be obtained through the outer radius R, the inner radius r, and the central angle θ. - A quantity of heat absorbed into the
heat absorbing member 30 from thesusceptor 12 is substantially proportional to the area of theheat absorbing member 30. Thus, to adjust the temperature distribution of thesusceptor 12, it is necessary to provide theheat absorbing member 30 having various shapes (or areas). This is done because temperatures of thesusceptor 12 are variously distributed on regions of thesusceptor 12. Thus, theheat absorbing member 30 ofFIG. 4 may be modified in various shapes. Therefore, theheat absorbing member 30 having various shapes may be provided. - The
heat absorbing member 30 may be formed of the same material as thesusceptor 12. For example, theheat absorbing member 30 may be formed of one of aluminum oxide (Al2O3) and aluminum nitride (AlN). As shown inFIGS. 1 and 3 , theheat absorbing member 30 includes asupport guide 32. Thesupport guide 32 prevents theheat absorbing member 30 from being excessively inserted into thesusceptor 12. -
FIG. 4 is a view illustrating a process in which the heat absorbing member is selectively inserted into the edge ring ofFIG. 1 . A method for adjusting a temperature distribution of the susceptor using the heat absorbing member will be described with reference toFIG. 4 . - First, a worker measures a temperature distribution of the
susceptor 12. Then, the worker may confirm at least one high temperature region having a temperature greater than a reference temperature through the measured temperature distribution. Here, the reference temperature may be set to a minimum temperature of the measured temperatures or set to a mean temperature of the measured temperatures. The temperature distribution of thesusceptor 12 may be measured in a state where theedge ring 20 is disposed on thesusceptor 12. - Thereafter, as shown in
FIG. 4 , the worker may insert theheat absorbing member 30 into the fixingslot 23 corresponding to the confirmed high temperature region. Here, a shape (or an area) of theheat absorbing member 30 may be determined in proportion to a temperature deviation (a difference between the high temperature and the reference temperature) in the high temperature region. An area of theheat absorbing member 30 may be determined according to contact distances d1, d2, and d3. Theheat absorbing member 30 is inserted into the fixingslot 23 inward from the outside of theedge ring 20. Thesupport guide 32 prevents theheat absorbing member 30 from being excessively inserted. - In the state where the
heat absorbing member 30 is inserted into the fixingslot 23, theheat absorbing member 30 contacts the top surface of thesusceptor 12 to absorb heat of thesusceptor 12, thereby reducing a temperature of a corresponding region of thesusceptor 12. As shown inFIG. 4 , theheat absorbing member 30 is not inserted into the fixing slots corresponding to regions of thesusceptor 12, each having temperatures less than the reference temperature. Here, theheat absorbing member 30 is separated from the edge ring 20 (“a released position”). - Although the
edge ring 20 includes eight fixingslots 23 in the current embodiment, the present invention is not limited thereto. For example, the number of fixing slots may be increased to accurately adjust the temperature distribution of thesusceptor 12. For example, if theedge ring 20 includes sixteen fixingslots 23, the temperature distribution of thesusceptor 12 may be more accurately adjusted through the sixteen fixingslots 23. - As described above, the temperature distribution of the
susceptor 12 may be easily adjusted. Also, as described above, although it is necessary to uniformly adjust a temperature distribution of thesusceptor 12 so as to secure the process uniformity, the temperature distribution of thesusceptor 12 may be affected by external conditions (a shape of the chamber, a position of the passage, and the like). Thus, it is impossible to manufacture a susceptor which can have a uniform temperature distribution when thesusceptor 12 is initially manufactured. However, if theedge ring 20 and theheat absorbing member 30 are used, theheat absorbing member 30 having various sizes may be fixedly inserted into the fixingslot 23 of theedge ring 20 after theedge ring 20 is disposed on thesusceptor 12 to effectively adjust the temperature distribution of thesusceptor 12, thereby minimizing a time and cost required for adjusting the temperature distribution of thesusceptor 12. Particularly, even though the external conditions are changed, a nonuniform temperature distribution may be minimized through theheat absorbing member 30. Thus, the substrate processing apparatus may be effectively utilized for various processes. -
FIG. 5 andFIG. 6 are views illustrating a substrate processing apparatus according to another embodiment of the present invention. In the foregoing embodiment ofFIG. 1 , theedge ring 20 is disposed on the upper portion of thesusceptor 12. However, as shown inFIG. 5 , anedge ring 50 may be disposed along a sidewall of achamber 11 and spaced apart from a top surface of asusceptor 12. Aheat absorbing member 30 may be fixedly inserted into theedge ring 50. - Referring to
FIG. 6 , thesusceptor 12 may ascend to perform a process. In a state where thesusceptor 12 ascends, theheat absorbing member 30 is maintained in thermal contact with the top surface of thesusceptor 12. Thus, theheat absorbing member 30 may absorb heat of a corresponding region of thesusceptor 12 through the same method as that of the foregoing embodiment to adjust a temperature distribution of thesusceptor 12. Here, like the foregoing embodiment, contact distances d1 and d2 (or areas) of theheat absorbing member 30 may be different from each other according to a quantity of heat to be absorbed from thesusceptor 12. - According to the present invention, it may be possible to uniformly adjust a temperature distribution on the wafer. Also, it may be possible to uniformly adjust a temperature distribution on the susceptor.
- Although the present invention is described in detail with reference to the exemplary embodiments, the invention may be embodied in many different forms. Thus, technical idea and scope of claims set forth below are not limited to the preferred embodiments.
Claims (10)
1. A substrate supporting unit comprising:
a susceptor on which a substrate is placed on a top surface thereof;
one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position; and
an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
2. The substrate supporting unit of claim 1 , wherein the susceptor has a central region in which the substrate is disposed and an edge region defined around the substrate, and
the heat absorbing members are disposed along the edge region at the mounted position.
3. The substrate supporting unit of claim 1 , wherein the edge ring has a ring shape and is disposed along the edge region of the susceptor, and
the fixing slots are penetrated in radius directions of the susceptor.
4. The substrate supporting unit of claim 1 , wherein the heat absorbing members have thermal contact surfaces thermally contacting the susceptor, and
the thermal contact surfaces have different areas.
5. The substrate supporting unit of claim 1 , wherein each of the heat absorbing members is formed of a material comprising one of aluminum oxide (Al2O3) and aluminum nitride (AlN).
6. A substrate processing apparatus comprising:
a chamber configured to provide an inner space in which processes are performed on a substrate;
a substrate supporting unit disposed within the chamber to support the substrate; and
a showerhead configured to supply process gases onto a top surface of the substrate supported by the substrate supporting unit,
wherein the substrate support uniting comprises:
a susceptor on which a substrate is placed on a top surface thereof;
one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position; and
an edge ring having a ring shape and disposed along a sidewall of the chamber, the edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
7. The substrate processing apparatus of claim 6 , wherein the susceptor has a central region in which the substrate is disposed and an edge region defined around the substrate, and
the heat absorbing members are disposed along the edge region at the mounted position.
8. The substrate processing apparatus of claim 6 , wherein the heat absorbing members have thermal contact surfaces thermally contacting the susceptor, and
the thermal contact surfaces have different areas.
9. A manufacturing method of a substrate supporting unit comprising a susceptor on which a substrate is placed, the method comprising:
measuring a temperature distribution of the susceptor to determine one or more high temperature regions, each having a high temperature greater than a reference temperature, of the substrate;
disposing an edge ring having a plurality of fixing slots on the substrate; and
selectively inserting and fixing heat absorbing members into the fixing slots respectively corresponding to the high temperature regions to adjust the temperature distribution of the susceptor.
10. The manufacturing method of claim 9 , wherein the heat absorbing members have thermal contact surfaces thermally contacting the susceptor, and
the thermal contact surfaces have different areas.
Applications Claiming Priority (3)
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KR1020110096730A KR101248881B1 (en) | 2011-09-26 | 2011-09-26 | Substrate supporting unit and substrate processing apparatus, manufacturing method of the substrate supporting unit |
KR10-2011-0096730 | 2011-09-26 | ||
PCT/KR2012/006777 WO2013048016A2 (en) | 2011-09-26 | 2012-08-24 | Substrate supporting unit and substrate processing device, and method for producing substrate supporting unit |
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US20140174356A1 true US20140174356A1 (en) | 2014-06-26 |
US9761473B2 US9761473B2 (en) | 2017-09-12 |
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US14/234,723 Active 2033-04-23 US9761473B2 (en) | 2011-09-26 | 2012-08-24 | Substrate supporting unit and substrate processing apparatus manufacturing method of the substrate supporting unit |
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US (1) | US9761473B2 (en) |
JP (1) | JP5824582B2 (en) |
KR (1) | KR101248881B1 (en) |
CN (1) | CN103733328B (en) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170207102A1 (en) * | 2016-01-15 | 2017-07-20 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
DE102019126769A1 (en) * | 2019-10-04 | 2021-04-08 | Aixtron Se | Process chamber with self-closing gas outlet |
WO2021209578A1 (en) * | 2020-04-17 | 2021-10-21 | Aixtron Se | Cvd process and cvd reactor with exchangeable bodies that exchange heat with the substrate |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106337204B (en) * | 2015-07-17 | 2018-11-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphite support and crystal growing furnace equipped with graphite support |
KR101679237B1 (en) * | 2015-12-14 | 2016-12-06 | 이승영 | Apparatus for exercising cardiopulmonary resuscitation |
US11581213B2 (en) | 2020-09-23 | 2023-02-14 | Applied Materials, Inc. | Susceptor wafer chucks for bowed wafers |
US20220293453A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5632873A (en) * | 1995-05-22 | 1997-05-27 | Stevens; Joseph J. | Two piece anti-stick clamp ring |
US5868847A (en) * | 1994-12-16 | 1999-02-09 | Applied Materials, Inc. | Clamp ring for shielding a substrate during film layer deposition |
US5997651A (en) * | 1995-10-18 | 1999-12-07 | Tokyo Electron Limited | Heat treatment apparatus |
US6168668B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
US6261408B1 (en) * | 2000-02-16 | 2001-07-17 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber pressure control |
US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
US20030066484A1 (en) * | 2001-09-26 | 2003-04-10 | Kawasaki Microelectronics, Inc. | Electrode cover, plasma apparatus utilizing the cover, and method of fitting the cover onto the plasma electrode |
US6585851B1 (en) * | 1997-03-07 | 2003-07-01 | Tadahiro Ohmi | Plasma etching device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6364954B2 (en) * | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
KR20010090375A (en) * | 2000-03-25 | 2001-10-18 | 윤종용 | Loding apparatus of wafer |
JP4720029B2 (en) | 2001-06-19 | 2011-07-13 | 東京エレクトロン株式会社 | Single wafer heat treatment equipment |
KR100439276B1 (en) * | 2003-11-24 | 2004-07-30 | 코닉 시스템 주식회사 | Rapid thermal process apparatus |
KR101207593B1 (en) * | 2007-03-28 | 2012-12-03 | 도쿄엘렉트론가부시키가이샤 | Cvd film-forming apparatus |
KR100943427B1 (en) * | 2008-02-04 | 2010-02-19 | 주식회사 유진테크 | Substrate supporting unit and substrate processing apparatus, manufacturing method of the substrate supporting unit |
US8454027B2 (en) * | 2008-09-26 | 2013-06-04 | Lam Research Corporation | Adjustable thermal contact between an electrostatic chuck and a hot edge ring by clocking a coupling ring |
-
2011
- 2011-09-26 KR KR1020110096730A patent/KR101248881B1/en active IP Right Grant
-
2012
- 2012-08-23 TW TW101130615A patent/TWI474435B/en active
- 2012-08-24 JP JP2014523878A patent/JP5824582B2/en active Active
- 2012-08-24 US US14/234,723 patent/US9761473B2/en active Active
- 2012-08-24 CN CN201280039981.XA patent/CN103733328B/en active Active
- 2012-08-24 WO PCT/KR2012/006777 patent/WO2013048016A2/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5868847A (en) * | 1994-12-16 | 1999-02-09 | Applied Materials, Inc. | Clamp ring for shielding a substrate during film layer deposition |
US5632873A (en) * | 1995-05-22 | 1997-05-27 | Stevens; Joseph J. | Two piece anti-stick clamp ring |
US5997651A (en) * | 1995-10-18 | 1999-12-07 | Tokyo Electron Limited | Heat treatment apparatus |
US6585851B1 (en) * | 1997-03-07 | 2003-07-01 | Tadahiro Ohmi | Plasma etching device |
US6168668B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
US6261408B1 (en) * | 2000-02-16 | 2001-07-17 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber pressure control |
US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
US20030066484A1 (en) * | 2001-09-26 | 2003-04-10 | Kawasaki Microelectronics, Inc. | Electrode cover, plasma apparatus utilizing the cover, and method of fitting the cover onto the plasma electrode |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170207102A1 (en) * | 2016-01-15 | 2017-07-20 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
DE102019126769A1 (en) * | 2019-10-04 | 2021-04-08 | Aixtron Se | Process chamber with self-closing gas outlet |
WO2021209578A1 (en) * | 2020-04-17 | 2021-10-21 | Aixtron Se | Cvd process and cvd reactor with exchangeable bodies that exchange heat with the substrate |
Also Published As
Publication number | Publication date |
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US9761473B2 (en) | 2017-09-12 |
KR101248881B1 (en) | 2013-04-01 |
JP5824582B2 (en) | 2015-11-25 |
CN103733328B (en) | 2016-12-21 |
CN103733328A (en) | 2014-04-16 |
TW201322364A (en) | 2013-06-01 |
TWI474435B (en) | 2015-02-21 |
JP2014527716A (en) | 2014-10-16 |
WO2013048016A3 (en) | 2013-05-23 |
WO2013048016A2 (en) | 2013-04-04 |
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