US20140209665A1 - Method for bonding heat-conducting substrate and metal layer - Google Patents
Method for bonding heat-conducting substrate and metal layer Download PDFInfo
- Publication number
- US20140209665A1 US20140209665A1 US14/243,878 US201414243878A US2014209665A1 US 20140209665 A1 US20140209665 A1 US 20140209665A1 US 201414243878 A US201414243878 A US 201414243878A US 2014209665 A1 US2014209665 A1 US 2014209665A1
- Authority
- US
- United States
- Prior art keywords
- heat
- layer
- metal layer
- conducting substrate
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/04—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the partial melting of at least one layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/14—Preventing or minimising gas access, or using protective gases or vacuum during welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2311/00—Metals, their alloys or their compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Abstract
A method for bonding a heat-conducting substrate and a metal layer is provided. A heat-conducting substrate, a first metal layer and a preformed layer are provided. The preformed layer is between the heat-conducting substrate and the first metal layer. The preformed layer is a second metal layer or a metal oxide layer. A heating process is performed to the preformed layer in an oxygen-free atmosphere to convert the preformed layer to a bonding layer for bonding the heat-conducting substrate and the first metal layer. The temperature of the heating process is less than or equal to 300° C.
Description
- This application is a divisional application of U.S. application Ser. No. 13/786,480, filed on Mar. 6, 2013. The application Ser. No. 13/786,480 claims the priority benefit of Taiwan application serial no. 101136943, filed on Oct. 5, 2012. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
- 1. Field of Invention
- The invention relates to a bonding method, and more particularly, to a method for bonding a heat-conducting substrate and a metal layer.
- 2. Description of Related Art
- The current bonding technology, for the purpose of heat conduction, utilizes a heat-conducting adhesive to bond two components to simultaneously achieve structural connection and heat-conducting connection. Moreover, to improve effects of heat conduction, a solder may also be used for bonding.
- With the advancement of technology, the effectiveness of electronic devices is ever increasing, resulting in ever increasing heat. Therefore, in order to prevent a malfunction of an electronic device due to high temperature, the electronic device has to be connected to a radiator for quickly transferring the heat generated therein to the radiator.
- However, thermal conductivity of the heat-conducting adhesive or solder can no longer satisfy the current demand for high heat-conducting efficiency. The heat-conducting adhesive or solder can no longer satisfy the heat dissipation requirements of a light emitting diode (LED).
- The invention is directed to a method for bonding a heat-conducting substrate and a metal layer, to bond a heat-conducting substrate and a metal layer.
- The invention provides a method for bonding a heat-conducting substrate and a metal layer. First, a heat-conducting substrate, a first metal layer and a preformed layer are provided, wherein the preformed layer is between the heat-conducting substrate and the first metal layer. The preformed layer is a second metal layer or a metal oxide layer. Then, a heating process is performed to the preformed layer in an oxygen-free atmosphere to convert the preformed layer to a bonding layer to bond the heat-conducting substrate and the first metal layer. The temperature of the heating process is less than or equal to 300° C.
- Based on the above, the invention performs the heating process to the preformed layer between the heat-conducting substrate and the first metal layer in the oxygen-free atmosphere to convert the preformed layer to the bonding layer in order to bond the heat-conducting substrate and the first metal layer. Since the invention only heats the preformed layer at the temperature of less than or equal to 300° C., the other devices are prevented from high temperature damage.
- To make the above characteristics and advantages of the invention more easily understood, embodiments accompanied with figures are described in detail below.
-
FIG. 1A toFIG. 1B are cross-sectional views illustrating a process of bonding a heat-conducting substrate and a metal layer according to an embodiment of the invention. -
FIG. 2 is a schematic cross-sectional view illustrating a structure of a chip disposed on a heat-conducting substrate according to an embodiment of the invention. -
FIG. 1A toFIG. 1B are cross-sectional views illustrating a process of bonding a heat-conducting substrate and a metal layer according to an embodiment of the invention. First, referring toFIG. 1A , a heat-conductingsubstrate 100, ametal layer 102 and apreformed layer 104 are provided. A material of the heat-conductingsubstrate 100 is, for instance, a metal or an alloy, such as copper, copper alloy, aluminum or aluminum alloy. Or, the heat-conductingsubstrate 100 may be a ceramic substrate having a metal surface. A material of themetal layer 102 is, for instance, copper, nickel, silver or gold. After themetal layer 102 is bonded to the metal heat-conducting substrate or to the metal surface of the ceramic substrate, the heat-conductingsubstrate 100 is used to conduct the heat from themetal layer 102 to outside, and that is, the heat-conductingsubstrate 100 acts as a radiator. - The
preformed layer 104 is located between the heat-conductingsubstrate 100 and themetal layer 102. In an embodiment, thepreformed layer 104 is first formed on the heat-conductingsubstrate 100, and then the heat-conductingsubstrate 100 and themetal layer 102 are stacked, so that thepreformed layer 104 is disposed between the heat-conductingsubstrate 100 and themetal layer 102. In another embodiment, thepreformed layer 104 may be first formed on themetal layer 102, followed by stacking the heat-conductingsubstrate 100 and themetal layer 102. - The
preformed layer 104 may be a metal layer. In an embodiment, a material of the metal layer is, for instance, silver or copper, and a formation method thereof is, for instance, electroplating by which a layer of metal material is plated on the heat-conductingsubstrate 100 or themetal layer 102. - Or, in another embodiment, the metal layer may be an adhesive layer containing a plurality of metal particles. A material of the metal particles is, for instance, silver, copper or a combination thereof, and a particle diameter of the metal particles is in the range between, for instance, 5 nanometers and 50 nanometers. In this case, the formation method of the metal layer is, for example, coating the adhesive layer containing metal particles on the heat-conducting
substrate 100 or themetal layer 102. - In addition, the
preformed layer 104 may be a metal oxide layer. In an embodiment, the metal oxide layer is a silver oxide layer or a copper oxide layer, and a formation method thereof is, for instance, electroless plating. For example, when the desired metal oxide layer is a silver oxide layer, the heat-conductingsubstrate 100 is placed in a silver nitrate solution to perform a chemical reaction to let the silver nitrate react and form into silver oxide on a surface of the heat-conductingsubstrate 100. - In another embodiment, the metal oxide layer may be an adhesive layer containing a plurality of metal oxide particles. A material of the metal oxide particles is, for instance, silver oxide or copper oxide. In this case, a formation method of the metal oxide layer is, for instance, coating the adhesive layer containing metal oxide particles on the heat-conducting
substrate 100 or themetal layer 102. - Then, referring to
FIG. 1B , aheating process 106 is performed to thepreformed layer 104 in an oxygen-free atmosphere, so as to convert thepreformed layer 104 to abonding layer 108 to bond the heat-conductingsubstrate 100 and themetal layer 102. The oxygen-free atmosphere is an inert gas atmosphere or a reducing gas atmosphere. The inert gas is, for instance, nitrogen or argon. The reducing gas is, for instance, hydrogen or hydrogen-containing gas. In addition, the temperature of theheating process 106 is less than or equal to 300° C. - It is worth mentioning that since the temperature of the
heating process 106 is less than or equal to 300° C., which is far less than the melting point of the preformed layer 104 (metal layer or metal oxide layer), which means that the heat-conductingsubstrate 100 and themetal layer 102 are bonded at a lower temperature, a problem that the other devices may be damaged due to high temperature is avoided. In addition, since the material for bonding the heat-conductingsubstrate 100 and themetal layer 102 is a metal or a metal oxide, which has good heat conduction characteristics, it effectively conducts the heat from themetal layer 102 to the heat-conductingsubstrate 100 to dissipate, thus simultaneously achieving the goals of structure bonding and heat conduction. - The examples below explain a structure formed by the method of bonding the heat-conducting substrate and the metal layer in the invention.
-
FIG. 2 is a schematic cross-sectional view illustrating a structure of a chip disposed on a heat-conducting substrate according to an embodiment of the invention. Referring toFIG. 2 , achip 202 is mounted on a stacking structure containing aceramic layer 204. A material of theceramic layer 204 is, for instance, aluminum oxide, boron nitride, aluminum nitride, silicon carbide, etc. A surface of theceramic layer 204 has acopper layer 206. Thecopper layer 206 is the first metal layer of the invention. - In addition, the stacking structure is mounted on a heat-conducting
substrate 200 that acts as a radiator. A material of the heat-conductingsubstrate 200 is, for instance, a metal or an alloy, or a ceramic substrate having a metal surface. Abonding layer 208 is disposed between the heat-conductingsubstrate 200 and thecopper layer 206 to bond the heat-conductingsubstrate 200 and thecopper layer 206. Thebonding layer 208 is converted from the preformedlayer 104 according to the method described inFIG. 1A toFIG. 1B . - It is known from the above that during a heating process for bonding the heat-conducting
substrate 200 and thecopper layer 206, the temperature is less than or equal to 300° C., which is far less than the melting point of the metal or the metal oxide, which means that the heat-conductingsubstrate 200 and thecopper layer 206 are bonded at a lower temperature, thus the problem that the other components may be damaged due to high temperature is avoided. - In addition, since the
bonding layer 208 is a metal or a metal oxide, which has good heat conducting characteristics, it effectively conducts the heat generated from thechip 202 to the heat-conductingsubstrate 200 to dissipate. - Although the invention has been described with reference to the above embodiments, it is apparent to one of the ordinary skill in the art that modifications to the described embodiments may be made without departing from the spirit of the invention. Accordingly, the scope of the invention will be defined by the attached claims not by the above detailed descriptions.
Claims (13)
1. A method for bonding a heat-conducting substrate and a metal layer, comprising:
providing a heat-conducting substrate, a first metal layer and a preformed layer, wherein the preformed layer is located between the heat-conducting substrate and the first metal layer, and the preformed layer is a second metal layer; and
performing a heating process to the preformed layer in an oxygen-free atmosphere, to convert the preformed layer to a bonding layer to bond the heat-conducting substrate and the first metal layer, wherein the temperature of the heating process is less than or equal to 300° C.
2. The method for bonding a heat-conducting substrate and a metal layer of claim 1 , wherein after the preformed layer is formed on the heat-conducting layer or the first metal layer, the heat-conducting layer and the first metal layer are stacked to dispose the preformed layer between the heat-conducting layer and the first metal layer.
3. The method for bonding a heat-conducting substrate and a metal layer of claim 1 , wherein the second metal layer comprises a silver layer or a copper layer.
4. The method for bonding a heat-conducting substrate and a metal layer of claim 3 , wherein the formation of the second metal layer comprises electroplating.
5. The method for bonding a heat-conducting substrate and a metal layer of claim 1 , wherein the second metal layer is an adhesive layer containing a plurality of metal particles.
6. The method for bonding a heat-conducting substrate and a metal layer of claim 5 , wherein materials of the metal particles comprise silver, copper or a combination thereof.
7. The method for bonding a heat-conducting substrate and a metal layer of claim 5 , wherein a particle diameter of the metal particles is in the range between 5 nanometers and 50 nanometers.
8. The method for bonding a heat-conducting substrate and a metal layer of claim 5 , wherein the formation of the second metal layer comprises coating.
9. The method for bonding a heat-conducting substrate and a metal layer of claim 1 , wherein materials of the heat-conducting substrate comprise a metal or an alloy.
10. The method for bonding a heat-conducting substrate and a metal layer of claim 1 , wherein the heat-conducting substrate comprises a ceramic substrate having a metal surface, and the first metal layer is bonded to the metal surface via the bonding layer.
11. The method for bonding a heat-conducting substrate and a metal layer of claim 1 , wherein the oxygen-free atmosphere comprises an inert gas atmosphere or a reducing gas atmosphere.
12. The method for bonding a heat-conducting substrate and a metal layer of claim 11 , wherein the inert gas comprises nitrogen or argon.
13. The method for bonding a heat-conducting substrate and a metal layer of claim 11 , wherein the reducing gas comprises hydrogen or hydrogen-containing gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/243,878 US20140209665A1 (en) | 2012-10-05 | 2014-04-02 | Method for bonding heat-conducting substrate and metal layer |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101136943A TWI463710B (en) | 2012-10-05 | 2012-10-05 | Mrthod for bonding heat-conducting substraye and metal layer |
TW101136943 | 2012-10-05 | ||
US13/786,480 US8740044B2 (en) | 2012-10-05 | 2013-03-06 | Method for bonding heat-conducting substrate and metal layer |
US14/243,878 US20140209665A1 (en) | 2012-10-05 | 2014-04-02 | Method for bonding heat-conducting substrate and metal layer |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/786,480 Division US8740044B2 (en) | 2012-10-05 | 2013-03-06 | Method for bonding heat-conducting substrate and metal layer |
Publications (1)
Publication Number | Publication Date |
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US20140209665A1 true US20140209665A1 (en) | 2014-07-31 |
Family
ID=50407974
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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US13/786,480 Expired - Fee Related US8740044B2 (en) | 2012-10-05 | 2013-03-06 | Method for bonding heat-conducting substrate and metal layer |
US14/243,878 Abandoned US20140209665A1 (en) | 2012-10-05 | 2014-04-02 | Method for bonding heat-conducting substrate and metal layer |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US13/786,480 Expired - Fee Related US8740044B2 (en) | 2012-10-05 | 2013-03-06 | Method for bonding heat-conducting substrate and metal layer |
Country Status (3)
Country | Link |
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US (2) | US8740044B2 (en) |
CN (1) | CN103715099A (en) |
TW (1) | TWI463710B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6659026B2 (en) * | 2015-10-14 | 2020-03-04 | 国立大学法人大阪大学 | Low temperature joining method using copper particles |
CN108300304B (en) * | 2017-09-29 | 2019-07-05 | 中国科学院化学研究所 | Heat conductive insulating plate and preparation method thereof and electronic component |
CN109696792B (en) * | 2017-10-24 | 2022-03-29 | 中强光电股份有限公司 | Projector and wavelength conversion device |
TWI699279B (en) * | 2018-10-22 | 2020-07-21 | 長興材料工業股份有限公司 | Electromagnetic-wave shielding film, preparation method, and use thereof |
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Also Published As
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US8740044B2 (en) | 2014-06-03 |
TWI463710B (en) | 2014-12-01 |
US20140096884A1 (en) | 2014-04-10 |
TW201415683A (en) | 2014-04-16 |
CN103715099A (en) | 2014-04-09 |
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