US20140346654A1 - Chip package - Google Patents
Chip package Download PDFInfo
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- US20140346654A1 US20140346654A1 US14/293,782 US201414293782A US2014346654A1 US 20140346654 A1 US20140346654 A1 US 20140346654A1 US 201414293782 A US201414293782 A US 201414293782A US 2014346654 A1 US2014346654 A1 US 2014346654A1
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- chip
- carrier
- conductive elements
- encapsulation
- carrying surface
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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Definitions
- the present invention generally relates to a chip package. More particularly, the present invention relates to a chip package having electromagnetic interference (EMI) shielding function.
- EMI electromagnetic interference
- a typical high-density area array package is the ball grid array (BGA) type package. Nonetheless, the thermal dissipation and the EMI problems of the BGA type package or even other types of chip package are still unresolved, and need to be carefully considered in the design of a high-density area array package.
- BGA ball grid array
- the present invention is directed to a chip package which is capable of eliminating the EMI problem and provides superior electrical performance.
- the present invention is also directed to a fabricating process of the chip package having EMI shielding ability.
- the present invention provides a chip package comprising a carrier, a chip, a plurality of first conductive elements, an encapsulation, and a conductive film.
- the carrier has a carrying surface and a back surface opposite to the carrying surface. Furthermore, the carrier has a plurality of common contacts in the periphery of the carrying surface.
- the chip is disposed on the carrying surface and electrically connected to the carrier.
- the first conductive elements are disposed on the common contacts respectively.
- the encapsulation is disposed on the carrying surface and encapsulating the chip.
- the conductive film is disposed over the encapsulation and the first conductive elements, so as to electrically connect with the common contacts via the first conductive elements.
- the present invention also provides a chip packaging process, comprising: providing a carrier which has a carrying surface and a back surface opposite to the carrying surface, the carrier further having a plurality of common contacts in the periphery of the carrying surface; disposing a chip on the carrying surface and electrically connecting the chip to the carrier; forming an encapsulation on the carrying surface, wherein the encapsulation encapsulates the chip; forming a plurality of first conductive elements on the corresponding common contacts; and providing a conductive film on the encapsulation and electrically connecting the conductive film to the common contacts via the first conductive elements.
- the present invention further provides a chip packaging process, comprising: providing a carrier which has a carrying surface and a back surface opposite to the carrying surface, the carrier further having a plurality of common contacts in the periphery of the carrying surface; disposing a chip on the carrying surface and electrically connecting the chip to the carrier; forming a plurality of first conductive elements on the corresponding common contacts; forming an encapsulation for covering the carrying surface and encapsulating the chip and the first conductive elements, wherein the encapsulation exposes a top portion of each first conductive element; providing a conductive film and forming a plurality of second conductive elements on a surface of the conductive film; and disposing the conductive film over the encapsulation and connecting the second conductive elements to the corresponding first conductive elements, wherein the conductive film is electrically connected to the common contacts via the first conductive elements and the second conductive elements.
- the present invention provides a chip packaging process, comprising: providing a carrier which has a carrying surface and a back surface opposite to the carrying surface, the carrier further having a plurality of common contacts in the periphery of the carrying surface; disposing a chip on the carrying surface and electrically connecting the chip to the carrier; forming a plurality of first conductive elements on the corresponding common contacts; forming an encapsulation for covering the carrying surface and encapsulating the chip and the first conductive elements, the encapsulation exposing a top portion of each first conductive element; and forming a conductive film on a top surface of the encapsulation so as to electrically connect the conductive film to the common contacts via the first conductive elements.
- the present invention disposes the conductive film over the encapsulation to form a common plane in the chip package, so as to solve the problem of EMI for the chip package. Therefore, products utilizing the chip package and the chip packaging process can achieve superior electrical performance and higher reliability.
- FIG. 1A illustrates a chip package according to an embodiment of the present invention.
- FIG. 1B and FIG. 1C show other chip packages utilizing different types of circuit substrate as carriers in comparison with that in FIG. 1A .
- FIGS. 2A ⁇ 2E show a chip package process of the chip packages in FIGS. 1A ⁇ 1C according to an embodiment of the present.
- FIG. 3A illustrates a chip package according to another embodiment of the present invention.
- FIG. 3B and FIG. 3C respectively show other chip packages utilizing different types of circuit substrate as carriers in comparison with that in FIG. 3A .
- FIGS. 4A ⁇ 4F show a chip package process of the chip packages in FIGS. 3A ⁇ 3C according to an embodiment of the present.
- FIG. 5A illustrates a chip package according to further another embodiment of the present invention.
- FIG. 5B and FIG. 5C respectively show other chip packages utilizing different types of circuit substrate as carriers in comparison with that in FIG. 5A .
- FIGS. 6A ⁇ 6E show a chip package process of the chip packages in FIGS. 5A ⁇ 5C according to an embodiment of the present.
- the present invention proposes a chip package with EMI shielding to improve the electrical performance and the reliability thereof.
- Embodiments are now given in the following to illustrate various arrangements of the chip package of the present invention. Furthermore, the accompanying fabricating processes of the chip package are also illustrated in the corresponding embodiments.
- FIG. 1A illustrates a chip package according to an embodiment of the present invention.
- the chip package 100 includes a carrier 110 , a chip 120 , first conductive elements 132 , an encapsulation 140 , and a conductive film 150 .
- the carrier 110 has a carrying surface 110 a and a back surface 110 b opposite to the carrying surface 110 a, wherein a plurality of common contacts 112 and bonding pads 114 is disposed in the periphery of the carrying surface 110 a.
- the embodiment shows a BGA type chip package 100 which utilize a circuit substrate as the carrier 110 , however, there is no set limit on the type of carrier, while other known appropriate chip package type, such as Pin Grid Array (PGA) type, Quad Flat Package (QFP) type and so on, can also be carried out in the present invention.
- PGA Pin Grid Array
- QFP Quad Flat Package
- the chip 120 is disposed on the carrying surface 110 a of the carrier 110 and is electrically connected with the carrier 110 by performing, for example, a wire bonding process, wherein the chip 120 is connected to the bonding pads 114 of the carrier 110 via plural wires 160 . It is noted that there is no limit on the manners for bonding the chip 120 and the carrier 110 in the present invention. For example, a flip chip bonding process may be carried out in another embodiment of the present invention to connect the chip 120 with the carrier 110 via a plurality of conductive bumps (not shown).
- the first conductive elements 132 are disposed on the common contacts 112 respectively.
- the first conductive elements 132 can be solder balls or other appropriate conductive objects, such as solder bumps.
- the encapsulation 140 is disposed on the carrying surface 110 a of the carrier 110 to encapsulate the chip 120 , the bonding pads 114 , the wires 160 and the peripheral devices 102 . Besides, the encapsulation 140 exposes the common contacts 112 and the first conductive elements 132 thereon. In other words, the first conductive elements 132 are arranged around the encapsulation 140 . Moreover, the conductive film 150 is disposed over the encapsulation 140 and the first conductive elements 132 , so as to be electrically connected with the common contacts 112 via the first conductive elements 132 .
- the conductive film 150 can serve as a common plane in the chip package 100 to provide an EMI shielding effect.
- the conductive film 150 of the embodiment can be manufactured by providing a metal sheet.
- the periphery surface of the conductive film 150 is coated with a conductive bonding layer 152 , such as a solder layer.
- the conductive film 150 is connected with the first conductive elements 132 via the conductive bonding layer 152 .
- the chip package 100 further comprise a plurality of solder balls 172 and 174 arranged in array on the back surface 110 b of the carrier 110 .
- the solder balls 172 are distributed in the periphery of the back surface 110 b and connected with the common contacts 112 .
- the conductive film 150 can be electrically connected with an external circuitry for the common voltage via the solder balls 172 .
- the solder balls 174 are distributed in the center region of the back surface 110 b and electrically connected with the bonding pads 114 via the carrier 110 .
- the chip 120 and the peripheral devices 102 can be connected with another external circuitry for driving signals via the solder balls 174 .
- the chip and the peripheral devices may further be electrically connected with the common contacts to share the common voltage with the conductive film by rearranging the wires and the interconnections of the carrier.
- FIG. 1B and FIG. 1C show other chip packages utilizing different types of circuit substrate as carriers respectively according to other embodiments of the present invention. Since most of the elements in the chip packages of FIG. 1B and FIG. 1C have been described in the aforementioned embodiment, details are not repeated herein.
- the carrier 100 further has at least one extending contact 116 on the carrying surface 110 a, wherein the extending contact 116 is electrically connected with the common contacts 112 via the interconnections 190 in the carrier 110 .
- the chip 120 and the bonding pads 114 may be electrically connected with the extending contact 116 via a part of the wires 160 .
- the chip 120 and the peripheral devices 102 can take the common voltage from the common contacts 112 as, for example, a ground voltage.
- FIG. 1C shows another chip package 100 with different arrangement of solder balls, wherein the solder balls 172 for providing the common voltage is disposed in the center region of the back surface 110 b and electrically connected with the common contacts 112 via the interconnections 190 in the carrier 110 .
- the solder balls 174 for providing the driving signals are distributed in the periphery of the back surface 110 b and electrically connected with the bonding pads 114 via the carrier 110 .
- chip package process for fabricating the aforementioned chip packages 100 is illustrated in the following. Since most of the elements of the chip packages 100 have been mentioned in the aforementioned embodiments, detailed descriptions are not repeated in the following.
- FIGS. 2A ⁇ 2E show the chip package process according to an embodiment of the present.
- the carrier 110 having the carrying surface 110 a and the back surface 110 b is provided.
- the chip 120 and the peripheral devices 102 are disposed on the carrying surface 110 a of the carrier 110 .
- the chip is bonded to the carrier 110 by wire bonding, flip chip bonding or other appropriate bonding manners.
- the peripheral devices 102 may be mounted on the carrier 110 by surface mount technology (SMT).
- SMT surface mount technology
- the encapsulation 140 is formed on the carrying surface 110 a of the carrier to encapsulate the chip 120 , the bonding pads 114 , the wires 160 and the peripheral devices 102 .
- the first conductive elements 132 are formed on the corresponding common contacts 112 , wherein the first conductive elements 132 surround the encapsulation 140 .
- the first conductive elements 132 are fabricated by forming a solder ball on each common contact 112 respectively.
- the conductive film 150 is provided on the encapsulation 140 and electrically connected with the common contacts 112 via the first conductive elements 132 .
- the conductive bonding layer 152 is formed between the conductive film 150 and the first conductive elements 132 before providing the conductive film 150 on the encapsulation 140 , so as to connect the conductive film 150 to the first conductive elements 132 via the conductive bonding layer 152 .
- the solder balls 172 and 174 can be selectively formed on the back surface 110 b of the carrier 110 , wherein the solder balls 172 and 174 are electrically connected with the chip 120 , the peripheral devices 102 and/or the first conductive elements 132 via the carrier 110 respectively.
- FIGS. 2A ⁇ 2E focuses on a single chip package. Practically, the above fabricating process is applied on an array type carrier and then forms a plurality of chip packages at the same time. Thus, a singulation process may further be carried out after the steps mentioned above to achieve a single chip package.
- FIG. 3A illustrates a chip package according to another embodiment of the present invention.
- the chip package 300 includes a carrier 310 , a chip 320 , first conductive elements 332 , second conductive elements 334 , an encapsulation 340 , and a conductive film 350 .
- the carrier 310 has a carrying surface 310 a and a back surface 310 b opposite to the carrying surface 310 a.
- a plurality of common contacts 312 and bonding pads 314 is disposed in the periphery of the carrying surface 310 a.
- the embodiment shows a BGA type chip package 300 which utilize a circuit substrate as the carrier 310 , however, there is no set limit on the type of carrier, while other known appropriate chip package type, such as PGA type, QFP type and so on, can also be carried out in the present invention.
- the chip 320 is disposed on the carrying surface 310 a of the carrier 310 and is electrically connected with the carrier 310 by performing, for example, a wire bonding process, wherein the chip 320 is connected to the bonding pads 314 of the carrier 310 via plural wires 360 . It is noted that there is no limit on the manners for bonding the chip 320 and the carrier 310 in the present invention. For example, a flip chip bonding process may be carried out in another embodiment of the present invention to connect the chip 320 with the carrier 310 via a plurality of conductive bumps (not shown).
- the first conductive elements 332 are disposed on the common contacts 312 respectively.
- the first conductive elements 332 can be solder balls or other appropriate conductive objects, such as solder bumps.
- the encapsulation 340 is disposed on the whole carrying surface 310 a of the carrier 310 to encapsulate the chip 320 , the first conductive elements 332 , the common contacts 312 , the bonding pads 314 , the wires 360 and the peripheral devices 302 . Particularly, the encapsulation 340 exposes a top portion of each first conductive element 332 .
- the conductive film 350 is disposed over the encapsulation 340 and the first conductive elements 332 .
- the second conductive elements 334 are disposed between the conductive film 350 and the corresponding first conductive elements 332 respectively, so as to electrically connect the conductive film 350 with the common contacts 312 .
- the second conductive elements 334 may be solder balls or other appropriate conductive elements such as solder bumps, or silver paste.
- the conductive film 350 can serve as a common plane in the chip package 300 to provide an EMI shielding effect.
- the conductive film 350 of the embodiment can be manufactured by providing a metal sheet. Then, the second conductive elements 334 are disposed in the periphery surface of the conductive film 350 . Therefore, the conductive film 350 can be electrically connected with the first conductive elements 332 via the second conductive elements 334 .
- the chip package 300 further comprise a plurality of solder balls 372 and 374 arranged in array on the back surface 310 b of the carrier 310 .
- the solder balls 372 are distributed in the periphery of the back surface 310 b and connected with the common contacts 312 .
- the conductive film 350 can be electrically connected with an external circuitry for the common voltage via the solder balls 372 .
- the solder balls 374 are distributed in the center region of the back surface 310 b and electrically connected with the bonding pads 314 via the carrier 310 .
- the chip 320 and the peripheral devices 302 can be connected with another external circuitry for driving signals via the solder balls 374 .
- the chip 320 and the peripheral devices 302 of the aforementioned embodiment may further be electrically connected with the common contacts 312 to share the common voltage with the conductive film 350 by rearranging the wires 360 and the interconnections of the carrier 310 .
- FIG. 3B and FIG. 3C which respectively show other chip packages utilizing different types of circuit substrate as carriers according to other embodiments of the present invention. Since most of the elements in the chip packages of FIG. 3B and FIG. 3C have been described in the aforementioned embodiment, details are not repeated herein.
- the carrier 300 further has at least one extending contact 316 on the carrying surface 310 a, wherein the extending contact 316 is electrically connected with the common contacts 312 via the interconnections 390 in the carrier 310 .
- the chip 320 and the bonding pads 314 may be electrically connected with the extending contact 316 via a part of the wires 360 .
- the chip 320 and the peripheral devices 302 can take the common voltage from the common contacts 312 as, for example, a ground voltage.
- FIG. 3C shows another chip package 300 with different arrangement of solder balls, wherein the solder balls 372 for providing the common voltage is disposed in the center region of the back surface 310 b and electrically connected with the common contacts 312 via the interconnections 390 in the carrier 310 .
- the solder balls 374 for providing the driving signals are distributed in the periphery of the back surface 310 b and electrically connected with the bonding pads 314 via the carrier 310 .
- chip package process for fabricating the aforementioned chip packages 300 is illustrated in the following. Since most of the elements of the chip packages 300 have been mentioned in the aforementioned embodiments, detailed descriptions are not repeated in the following.
- FIGS. 4A ⁇ 4F show the chip package process according to an embodiment of the present.
- the carrier 310 having the carrying surface 310 a and the back surface 310 b is provided.
- the chip 320 and the peripheral devices 302 are disposed on the carrying surface 310 a of the carrier 310 .
- the chip is bonded to the carrier 310 by wire bonding, flip chip bonding or other appropriate bonding manners.
- the peripheral devices 302 may be mounted on the carrier 310 by SMT.
- the first conductive elements 332 are formed on the corresponding common contacts 312 .
- the first conductive elements 332 are fabricated by forming a solder ball on each common contact 312 respectively.
- the encapsulation 340 is formed on the whole carrying surface 310 a of the carrier to encapsulate the chip 320 , the peripheral devices 302 , the common contacts 312 , the bonding pads 314 , the wires 360 and the first conductive elements 332 . It is noted that the encapsulation 340 shall expose a top portion of each first conductive element 332 .
- the conductive film 350 is provided and the second conductive elements 334 are formed on a surface of the conductive film 350 .
- the second conductive elements 334 are fabricated by forming a plurality of solder balls on the conductive film 350 .
- the conductive film 350 is disposed on the encapsulation 340 and the second conductive elements 334 on the conductive film 350 are connected to the corresponding first conductive elements 332 , wherein the conductive film 350 is electrically connected to the common contacts 312 via the first conductive elements 332 and the second conductive elements 334 .
- the solder balls 372 and 374 can be selectively formed on the back surface 310 b of the carrier 310 , wherein the solder balls 372 and 374 are electrically connected with the chip 320 , the peripheral devices 302 , and/or the first conductive elements 332 via the carrier 310 respectively.
- FIGS. 4A ⁇ 4F focuses on a single chip package. Practically, the above fabricating process is applied on an array type carrier and then forms a plurality of chip packages at the same time. Thus, a singulation process may further be carried out after the steps mentioned above to achieve a single chip package.
- FIG. 5A illustrates a chip package according to further another embodiment of the present invention.
- the chip package 500 includes a carrier 510 , a chip 520 , first conductive elements 532 , an encapsulation 540 , and a conductive film 550 .
- the carrier 510 has a carrying surface 510 a and a back surface 510 b opposite to the carrying surface 510 a.
- a plurality of common contacts 512 and bonding pads 514 is disposed in the periphery of the carrying surface 510 a.
- the embodiment shows a BGA type chip package 500 which utilize a circuit substrate as the carrier 510 , however, there is no set limit on the type of carrier, while other known appropriate chip package type, such as PGA type, QFP type and so on, can also be carried out in the present invention.
- the chip 520 is disposed on the carrying surface 510 a of the carrier 510 and is electrically connected with the carrier 510 by performing, for example, a wire bonding process, wherein the chip 520 is connected to the bonding pads 514 of the carrier 510 via plural wires 560 . It is noted that there is no limit on the manners for bonding the chip 520 and the carrier 510 in the present invention. For example, a flip chip bonding process may be carried out in another embodiment of the present invention to connect the chip 520 with the carrier 510 via a plurality of conductive bumps (not shown).
- the first conductive elements 532 are disposed on the common contacts 512 respectively.
- the first conductive elements 532 can be solder balls or other appropriate conductive objects, such as solder bumps.
- the encapsulation 540 is disposed on the whole carrying surface 510 a of the carrier 510 to encapsulate the chip 520 , the first conductive elements 532 , the common contacts 512 , the bonding pads 514 , the wires 560 and the peripheral devices 502 . Particularly, the encapsulation 540 exposes a top portion of each first conductive element 532 . In addition, the conductive film 550 is directly attached on a top surface of the encapsulation 540 so as to connect with the first conductive elements 532 .
- the conductive film 550 can serve as a common plane in the chip package 500 to provide an EMI shielding effect.
- the conductive film 550 of the embodiment can be manufactured by spraying a conductive material on the top surface of the encapsulation 540 . Therefore, the conductive film 550 can be electrically connected with the common contacts 512 via the first conductive elements 532 .
- the chip package 500 further comprise a plurality of solder balls 572 and 574 arranged in array on the back surface 510 b of the carrier 510 .
- the solder balls 572 are distributed in the periphery of the back surface 510 b and connected with the common contacts 512 .
- the conductive film 550 can be electrically connected with an external circuitry for the common voltage via the solder balls 572 .
- the solder balls 574 are distributed in the center region of the back surface 510 b and electrically connected with the bonding pads 514 via the carrier 510 .
- the chip 520 and the peripheral devices 502 can be connected with another external circuitry for driving signals via the solder balls 574 .
- the chip 520 and the peripheral devices 502 of the aforementioned embodiment may further be electrically connected with the common contacts 512 to share the common voltage with the conductive film 550 by rearranging the wires 560 and the interconnections of the carrier 510 .
- FIG. 5B and FIG. 5C which respectively show other chip packages utilizing different types of circuit substrate as carriers in comparison with that in FIG. 5A . Since most of the elements in the chip packages of FIG. 5B and FIG. 5C have been described in the aforementioned embodiment, details are not repeated herein.
- the carrier 500 further has at least one extending contact 516 on the carrying surface 510 a, wherein the extending contact 516 is electrically connected with the common contacts 512 via the interconnections 590 in the carrier 510 .
- the chip 520 and the bonding pads 514 may be electrically connected with the extending contact 516 via a part of the wires 560 .
- the chip 520 and the peripheral devices 502 can take the common voltage from the common contacts 512 as, for example, a ground voltage.
- FIG. 5C shows another chip package 500 with different arrangement of solder balls, wherein the solder balls 572 for providing the common voltage is disposed in the center region of the back surface 510 b and electrically connected with the common contacts 512 via the interconnections 590 in the carrier 510 .
- the solder balls 574 for providing the driving signals are distributed in the periphery of the back surface 510 b and electrically connected with the bonding pads 514 via the carrier 510 .
- chip package process for fabricating the aforementioned chip packages 500 is illustrated in the following. Since most of the elements of the chip packages 500 have been mentioned in the aforementioned embodiments, detailed descriptions are not repeated in the following.
- FIGS. 6A ⁇ 6E show the chip package process according to an embodiment of the present.
- the carrier 510 having the carrying surface 510 a and the back surface 510 b is provided.
- the chip 520 and the peripheral devices 502 are disposed on the carrying surface 510 a of the carrier 510 .
- the chip is bonded to the carrier 510 by wire bonding, flip chip bonding or other appropriate bonding manners.
- the peripheral devices 502 may be mounted on the carrier 510 by SMT.
- the first conductive elements 532 are formed on the corresponding common contacts 512 .
- the first conductive elements 532 are fabricated by forming a solder ball on each common contact 512 respectively.
- the encapsulation 540 is formed on the whole carrying surface 510 a of the carrier to encapsulate the chip 520 , the peripheral devices 502 , the common contacts 512 , the bonding pads 514 , the wires 560 and the first conductive elements 532 . It is noted that the encapsulation 540 shall expose a top portion of each first conductive element 532 .
- the conductive film 550 is formed by spraying a conductive material on the top surface of the encapsulation 540 . Therefore, the conductive film 550 can be electrically connected to the common contacts 512 via the first conductive elements 532 .
- the solder balls 572 and 574 can be selectively formed on the back surface 510 b of the carrier 510 , wherein the solder balls 572 and 574 are electrically connected with the chip 520 , the peripheral devices 502 and/or the first conductive elements 532 via the carrier 510 respectively.
- FIGS. 6A ⁇ 6E focuses on a single chip package. Practically, the above fabricating process is applied on an array type carrier and then forms a plurality of chip packages at the same time. Thus, a singulation process may further be carried out after the steps mentioned above to achieve a single chip package.
- the present invention provides structures and the fabricating method thereof to integrate a conductive film into a chip package, wherein the conductive film can be taken as a common plane, so as to solve the problem of EMI for the chip package. Therefore, products utilizing the chip package and the chip packaging process can achieve superior electrical performance and higher reliability.
Abstract
A chip package comprising a carrier, a chip, a plurality of first conductive elements, an encapsulation, and a conductive film is provided. The carrier has a carrying surface and a back surface opposite to the carrying surface. Furthermore, the carrier has a plurality of common contacts in the periphery of the carrying surface. The chip is disposed on the carrying surface and electrically connected to the carrier. In addition, the first conductive elements are disposed on the common contacts respectively. The encapsulation is disposed on the carrying surface and encapsulating the chip. Moreover, the conductive film is disposed over the encapsulation and the first conductive elements, so as to electrically connect with the common contacts via the first conductive elements. A process for fabricating the chip package is further provided. The chip package is capable of preventing the EMI problem and thus provides superior electrical performance.
Description
- This application is a continuation of U.S. application Ser. No. 12/491,742, filed Jun. 25, 2009, which is a divisional application of and claims the priority benefit of U.S. patent application Ser. No. 11/565,299, filed on Nov. 30, 2006, now abandoned. The entirety of the above-mentioned patent applications are hereby incorporated by reference herein and made a part of this specification.
- 1. Field of the Invention
- The present invention generally relates to a chip package. More particularly, the present invention relates to a chip package having electromagnetic interference (EMI) shielding function.
- 2. Description of Related Art
- In the manufacturing of integrated circuits, ultimate size of the package is an important issue. As the level of integration and functions of integrated circuits increase, the number of conductive leads required for connections with external circuitry is also increased. Furthermore, as the operating speed of chip goes higher, the amount of heat generated by the chip and electrical interference caused by external electromagnetic fields during operation can no longer be ignored. A typical high-density area array package is the ball grid array (BGA) type package. Nonetheless, the thermal dissipation and the EMI problems of the BGA type package or even other types of chip package are still unresolved, and need to be carefully considered in the design of a high-density area array package.
- Accordingly, the present invention is directed to a chip package which is capable of eliminating the EMI problem and provides superior electrical performance.
- The present invention is also directed to a fabricating process of the chip package having EMI shielding ability.
- As embodied and broadly described herein, the present invention provides a chip package comprising a carrier, a chip, a plurality of first conductive elements, an encapsulation, and a conductive film. The carrier has a carrying surface and a back surface opposite to the carrying surface. Furthermore, the carrier has a plurality of common contacts in the periphery of the carrying surface. The chip is disposed on the carrying surface and electrically connected to the carrier. In addition, the first conductive elements are disposed on the common contacts respectively. The encapsulation is disposed on the carrying surface and encapsulating the chip. Moreover, the conductive film is disposed over the encapsulation and the first conductive elements, so as to electrically connect with the common contacts via the first conductive elements.
- The present invention also provides a chip packaging process, comprising: providing a carrier which has a carrying surface and a back surface opposite to the carrying surface, the carrier further having a plurality of common contacts in the periphery of the carrying surface; disposing a chip on the carrying surface and electrically connecting the chip to the carrier; forming an encapsulation on the carrying surface, wherein the encapsulation encapsulates the chip; forming a plurality of first conductive elements on the corresponding common contacts; and providing a conductive film on the encapsulation and electrically connecting the conductive film to the common contacts via the first conductive elements.
- The present invention further provides a chip packaging process, comprising: providing a carrier which has a carrying surface and a back surface opposite to the carrying surface, the carrier further having a plurality of common contacts in the periphery of the carrying surface; disposing a chip on the carrying surface and electrically connecting the chip to the carrier; forming a plurality of first conductive elements on the corresponding common contacts; forming an encapsulation for covering the carrying surface and encapsulating the chip and the first conductive elements, wherein the encapsulation exposes a top portion of each first conductive element; providing a conductive film and forming a plurality of second conductive elements on a surface of the conductive film; and disposing the conductive film over the encapsulation and connecting the second conductive elements to the corresponding first conductive elements, wherein the conductive film is electrically connected to the common contacts via the first conductive elements and the second conductive elements.
- Moreover, the present invention provides a chip packaging process, comprising: providing a carrier which has a carrying surface and a back surface opposite to the carrying surface, the carrier further having a plurality of common contacts in the periphery of the carrying surface; disposing a chip on the carrying surface and electrically connecting the chip to the carrier; forming a plurality of first conductive elements on the corresponding common contacts; forming an encapsulation for covering the carrying surface and encapsulating the chip and the first conductive elements, the encapsulation exposing a top portion of each first conductive element; and forming a conductive film on a top surface of the encapsulation so as to electrically connect the conductive film to the common contacts via the first conductive elements.
- To sum up, the present invention disposes the conductive film over the encapsulation to form a common plane in the chip package, so as to solve the problem of EMI for the chip package. Therefore, products utilizing the chip package and the chip packaging process can achieve superior electrical performance and higher reliability.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
-
FIG. 1A illustrates a chip package according to an embodiment of the present invention. -
FIG. 1B andFIG. 1C show other chip packages utilizing different types of circuit substrate as carriers in comparison with that inFIG. 1A . -
FIGS. 2A˜2E , show a chip package process of the chip packages inFIGS. 1A˜1C according to an embodiment of the present. -
FIG. 3A illustrates a chip package according to another embodiment of the present invention. -
FIG. 3B andFIG. 3C respectively show other chip packages utilizing different types of circuit substrate as carriers in comparison with that inFIG. 3A . -
FIGS. 4A˜4F show a chip package process of the chip packages inFIGS. 3A˜3C according to an embodiment of the present. -
FIG. 5A illustrates a chip package according to further another embodiment of the present invention. -
FIG. 5B andFIG. 5C respectively show other chip packages utilizing different types of circuit substrate as carriers in comparison with that inFIG. 5A . -
FIGS. 6A˜6E show a chip package process of the chip packages inFIGS. 5A˜5C according to an embodiment of the present. - The present invention proposes a chip package with EMI shielding to improve the electrical performance and the reliability thereof. Embodiments are now given in the following to illustrate various arrangements of the chip package of the present invention. Furthermore, the accompanying fabricating processes of the chip package are also illustrated in the corresponding embodiments.
- Reference will now be made in detail to the present embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
-
FIG. 1A illustrates a chip package according to an embodiment of the present invention. Referring toFIG. 1A , thechip package 100 includes acarrier 110, achip 120, firstconductive elements 132, anencapsulation 140, and aconductive film 150. Thecarrier 110 has a carryingsurface 110 a and aback surface 110 b opposite to the carryingsurface 110 a, wherein a plurality ofcommon contacts 112 andbonding pads 114 is disposed in the periphery of the carryingsurface 110 a. It is noted that the embodiment shows a BGAtype chip package 100 which utilize a circuit substrate as thecarrier 110, however, there is no set limit on the type of carrier, while other known appropriate chip package type, such as Pin Grid Array (PGA) type, Quad Flat Package (QFP) type and so on, can also be carried out in the present invention. - In addition, the
chip 120 is disposed on the carryingsurface 110 a of thecarrier 110 and is electrically connected with thecarrier 110 by performing, for example, a wire bonding process, wherein thechip 120 is connected to thebonding pads 114 of thecarrier 110 viaplural wires 160. It is noted that there is no limit on the manners for bonding thechip 120 and thecarrier 110 in the present invention. For example, a flip chip bonding process may be carried out in another embodiment of the present invention to connect thechip 120 with thecarrier 110 via a plurality of conductive bumps (not shown). - The first
conductive elements 132 are disposed on thecommon contacts 112 respectively. For example, the firstconductive elements 132 can be solder balls or other appropriate conductive objects, such as solder bumps. In the embodiment, there may also be someperipheral devices 102 disposed on the carryingsurface 110 a of thecarrier 110, wherein theperipheral devices 102 may be passive devices, such as capacitors, resistors, or inductors, which are electrically connected with thechip 120 via thecarrier 110. - The
encapsulation 140 is disposed on the carryingsurface 110 a of thecarrier 110 to encapsulate thechip 120, thebonding pads 114, thewires 160 and theperipheral devices 102. Besides, theencapsulation 140 exposes thecommon contacts 112 and the firstconductive elements 132 thereon. In other words, the firstconductive elements 132 are arranged around theencapsulation 140. Moreover, theconductive film 150 is disposed over theencapsulation 140 and the firstconductive elements 132, so as to be electrically connected with thecommon contacts 112 via the firstconductive elements 132. By applying a common voltage on theconductive film 150 through thecommon contacts 112, theconductive film 150 can serve as a common plane in thechip package 100 to provide an EMI shielding effect. Specifically, theconductive film 150 of the embodiment can be manufactured by providing a metal sheet. Furthermore, the periphery surface of theconductive film 150 is coated with aconductive bonding layer 152, such as a solder layer. Theconductive film 150 is connected with the firstconductive elements 132 via theconductive bonding layer 152. - The
chip package 100 further comprise a plurality ofsolder balls back surface 110 b of thecarrier 110. Thesolder balls 172 are distributed in the periphery of theback surface 110 b and connected with thecommon contacts 112. Thus, theconductive film 150 can be electrically connected with an external circuitry for the common voltage via thesolder balls 172. Besides, thesolder balls 174 are distributed in the center region of theback surface 110 b and electrically connected with thebonding pads 114 via thecarrier 110. Thechip 120 and theperipheral devices 102 can be connected with another external circuitry for driving signals via thesolder balls 174. - It should be noted that, in the present invention, the chip and the peripheral devices may further be electrically connected with the common contacts to share the common voltage with the conductive film by rearranging the wires and the interconnections of the carrier.
- Accordingly,
FIG. 1B andFIG. 1C show other chip packages utilizing different types of circuit substrate as carriers respectively according to other embodiments of the present invention. Since most of the elements in the chip packages ofFIG. 1B andFIG. 1C have been described in the aforementioned embodiment, details are not repeated herein. - Referring to
FIG. 1B , expect thecommon contacts 112, thecarrier 100 further has at least one extendingcontact 116 on the carryingsurface 110 a, wherein the extendingcontact 116 is electrically connected with thecommon contacts 112 via theinterconnections 190 in thecarrier 110. In addition, thechip 120 and thebonding pads 114 may be electrically connected with the extendingcontact 116 via a part of thewires 160. Thus, thechip 120 and theperipheral devices 102 can take the common voltage from thecommon contacts 112 as, for example, a ground voltage. -
FIG. 1C shows anotherchip package 100 with different arrangement of solder balls, wherein thesolder balls 172 for providing the common voltage is disposed in the center region of theback surface 110 b and electrically connected with thecommon contacts 112 via theinterconnections 190 in thecarrier 110. In addition, thesolder balls 174 for providing the driving signals are distributed in the periphery of theback surface 110 b and electrically connected with thebonding pads 114 via thecarrier 110. - For providing a more detailed and clear disclosure of the present invention, a chip package process for fabricating the aforementioned chip packages 100 is illustrated in the following. Since most of the elements of the chip packages 100 have been mentioned in the aforementioned embodiments, detailed descriptions are not repeated in the following.
-
FIGS. 2A˜2E show the chip package process according to an embodiment of the present. First, as shown inFIG. 2A , thecarrier 110 having the carryingsurface 110 a and theback surface 110 b is provided. Then, as shown inFIG. 2B , thechip 120 and theperipheral devices 102 are disposed on the carryingsurface 110 a of thecarrier 110. The chip is bonded to thecarrier 110 by wire bonding, flip chip bonding or other appropriate bonding manners. In addition, theperipheral devices 102 may be mounted on thecarrier 110 by surface mount technology (SMT). - Next, as shown in
FIG. 2C , theencapsulation 140 is formed on the carryingsurface 110 a of the carrier to encapsulate thechip 120, thebonding pads 114, thewires 160 and theperipheral devices 102. Thereafter, as shown inFIG. 2D , the firstconductive elements 132 are formed on the correspondingcommon contacts 112, wherein the firstconductive elements 132 surround theencapsulation 140. In the embodiment, the firstconductive elements 132 are fabricated by forming a solder ball on eachcommon contact 112 respectively. - Then, as shown in
FIG. 2E , theconductive film 150 is provided on theencapsulation 140 and electrically connected with thecommon contacts 112 via the firstconductive elements 132. Herein, theconductive bonding layer 152 is formed between theconductive film 150 and the firstconductive elements 132 before providing theconductive film 150 on theencapsulation 140, so as to connect theconductive film 150 to the firstconductive elements 132 via theconductive bonding layer 152. After that, thesolder balls back surface 110 b of thecarrier 110, wherein thesolder balls chip 120, theperipheral devices 102 and/or the firstconductive elements 132 via thecarrier 110 respectively. - It is noted that the above fabricating process as shown in
FIGS. 2A˜2E focuses on a single chip package. Practically, the above fabricating process is applied on an array type carrier and then forms a plurality of chip packages at the same time. Thus, a singulation process may further be carried out after the steps mentioned above to achieve a single chip package. - In addition to the above embodiments, other types of chip packages and the corresponding fabricating processes thereof are illustrated in the following.
-
FIG. 3A illustrates a chip package according to another embodiment of the present invention. Referring toFIG. 3A , thechip package 300 includes acarrier 310, achip 320, firstconductive elements 332, secondconductive elements 334, anencapsulation 340, and aconductive film 350. Thecarrier 310 has a carryingsurface 310 a and aback surface 310 b opposite to the carryingsurface 310 a. A plurality ofcommon contacts 312 andbonding pads 314 is disposed in the periphery of the carryingsurface 310 a. It is noted that the embodiment shows a BGAtype chip package 300 which utilize a circuit substrate as thecarrier 310, however, there is no set limit on the type of carrier, while other known appropriate chip package type, such as PGA type, QFP type and so on, can also be carried out in the present invention. - The
chip 320 is disposed on the carryingsurface 310 a of thecarrier 310 and is electrically connected with thecarrier 310 by performing, for example, a wire bonding process, wherein thechip 320 is connected to thebonding pads 314 of thecarrier 310 viaplural wires 360. It is noted that there is no limit on the manners for bonding thechip 320 and thecarrier 310 in the present invention. For example, a flip chip bonding process may be carried out in another embodiment of the present invention to connect thechip 320 with thecarrier 310 via a plurality of conductive bumps (not shown). - The first
conductive elements 332 are disposed on thecommon contacts 312 respectively. For example, the firstconductive elements 332 can be solder balls or other appropriate conductive objects, such as solder bumps. In the embodiment, there may also be someperipheral devices 302 disposed on the carryingsurface 310 a of thecarrier 310, wherein theperipheral devices 302 may be passive devices, such as capacitors, resistors, or inductors, which are electrically connected with thechip 320 via thecarrier 310. - The
encapsulation 340 is disposed on the whole carryingsurface 310 a of thecarrier 310 to encapsulate thechip 320, the firstconductive elements 332, thecommon contacts 312, thebonding pads 314, thewires 360 and theperipheral devices 302. Particularly, theencapsulation 340 exposes a top portion of each firstconductive element 332. In addition, theconductive film 350 is disposed over theencapsulation 340 and the firstconductive elements 332. The secondconductive elements 334 are disposed between theconductive film 350 and the corresponding firstconductive elements 332 respectively, so as to electrically connect theconductive film 350 with thecommon contacts 312. In the embodiment, the secondconductive elements 334 may be solder balls or other appropriate conductive elements such as solder bumps, or silver paste. - By applying a common voltage on the
conductive film 350 through thecommon contacts 312, theconductive film 350 can serve as a common plane in thechip package 300 to provide an EMI shielding effect. Specifically, theconductive film 350 of the embodiment can be manufactured by providing a metal sheet. Then, the secondconductive elements 334 are disposed in the periphery surface of theconductive film 350. Therefore, theconductive film 350 can be electrically connected with the firstconductive elements 332 via the secondconductive elements 334. - The
chip package 300 further comprise a plurality ofsolder balls back surface 310 b of thecarrier 310. Thesolder balls 372 are distributed in the periphery of theback surface 310 b and connected with thecommon contacts 312. Thus, theconductive film 350 can be electrically connected with an external circuitry for the common voltage via thesolder balls 372. Besides, thesolder balls 374 are distributed in the center region of theback surface 310 b and electrically connected with thebonding pads 314 via thecarrier 310. Thechip 320 and theperipheral devices 302 can be connected with another external circuitry for driving signals via thesolder balls 374. - Similar to the above illustrations of
FIG. 1B andFIG. 1C , thechip 320 and theperipheral devices 302 of the aforementioned embodiment may further be electrically connected with thecommon contacts 312 to share the common voltage with theconductive film 350 by rearranging thewires 360 and the interconnections of thecarrier 310. Referring toFIG. 3B andFIG. 3C , which respectively show other chip packages utilizing different types of circuit substrate as carriers according to other embodiments of the present invention. Since most of the elements in the chip packages ofFIG. 3B andFIG. 3C have been described in the aforementioned embodiment, details are not repeated herein. - As shown in
FIG. 3B , expect thecommon contacts 312, thecarrier 300 further has at least one extendingcontact 316 on the carryingsurface 310 a, wherein the extendingcontact 316 is electrically connected with thecommon contacts 312 via theinterconnections 390 in thecarrier 310. In addition, thechip 320 and thebonding pads 314 may be electrically connected with the extendingcontact 316 via a part of thewires 360. Thus, thechip 320 and theperipheral devices 302 can take the common voltage from thecommon contacts 312 as, for example, a ground voltage. -
FIG. 3C shows anotherchip package 300 with different arrangement of solder balls, wherein thesolder balls 372 for providing the common voltage is disposed in the center region of theback surface 310 b and electrically connected with thecommon contacts 312 via theinterconnections 390 in thecarrier 310. In addition, thesolder balls 374 for providing the driving signals are distributed in the periphery of theback surface 310 b and electrically connected with thebonding pads 314 via thecarrier 310. - In order to provide a more detailed and clear disclosure of the present invention, a chip package process for fabricating the aforementioned chip packages 300 is illustrated in the following. Since most of the elements of the chip packages 300 have been mentioned in the aforementioned embodiments, detailed descriptions are not repeated in the following.
-
FIGS. 4A˜4F show the chip package process according to an embodiment of the present. First, as shown inFIG. 4A , thecarrier 310 having the carryingsurface 310 a and theback surface 310 b is provided. Then, as shown inFIG. 4B , thechip 320 and theperipheral devices 302 are disposed on the carryingsurface 310 a of thecarrier 310. The chip is bonded to thecarrier 310 by wire bonding, flip chip bonding or other appropriate bonding manners. In addition, theperipheral devices 302 may be mounted on thecarrier 310 by SMT. - Next, as shown in
FIG. 4C , the firstconductive elements 332 are formed on the correspondingcommon contacts 312. In the embodiment, the firstconductive elements 332 are fabricated by forming a solder ball on eachcommon contact 312 respectively. Then, as shown inFIG. 4D , theencapsulation 340 is formed on the whole carryingsurface 310 a of the carrier to encapsulate thechip 320, theperipheral devices 302, thecommon contacts 312, thebonding pads 314, thewires 360 and the firstconductive elements 332. It is noted that theencapsulation 340 shall expose a top portion of each firstconductive element 332. - Thereafter, as shown in
FIG. 4E , theconductive film 350 is provided and the secondconductive elements 334 are formed on a surface of theconductive film 350. In the embodiment, the secondconductive elements 334 are fabricated by forming a plurality of solder balls on theconductive film 350. - Then, as shown in
FIG. 4F , theconductive film 350 is disposed on theencapsulation 340 and the secondconductive elements 334 on theconductive film 350 are connected to the corresponding firstconductive elements 332, wherein theconductive film 350 is electrically connected to thecommon contacts 312 via the firstconductive elements 332 and the secondconductive elements 334. After that, thesolder balls back surface 310 b of thecarrier 310, wherein thesolder balls chip 320, theperipheral devices 302, and/or the firstconductive elements 332 via thecarrier 310 respectively. - It is noted that the above fabricating process as shown in
FIGS. 4A˜4F focuses on a single chip package. Practically, the above fabricating process is applied on an array type carrier and then forms a plurality of chip packages at the same time. Thus, a singulation process may further be carried out after the steps mentioned above to achieve a single chip package. -
FIG. 5A illustrates a chip package according to further another embodiment of the present invention. Referring toFIG. 5A , thechip package 500 includes acarrier 510, achip 520, firstconductive elements 532, anencapsulation 540, and aconductive film 550. Thecarrier 510 has a carryingsurface 510 a and aback surface 510 b opposite to the carryingsurface 510 a. A plurality ofcommon contacts 512 andbonding pads 514 is disposed in the periphery of the carryingsurface 510 a. It is noted that the embodiment shows a BGAtype chip package 500 which utilize a circuit substrate as thecarrier 510, however, there is no set limit on the type of carrier, while other known appropriate chip package type, such as PGA type, QFP type and so on, can also be carried out in the present invention. - The
chip 520 is disposed on the carryingsurface 510 a of thecarrier 510 and is electrically connected with thecarrier 510 by performing, for example, a wire bonding process, wherein thechip 520 is connected to thebonding pads 514 of thecarrier 510 viaplural wires 560. It is noted that there is no limit on the manners for bonding thechip 520 and thecarrier 510 in the present invention. For example, a flip chip bonding process may be carried out in another embodiment of the present invention to connect thechip 520 with thecarrier 510 via a plurality of conductive bumps (not shown). - The first
conductive elements 532 are disposed on thecommon contacts 512 respectively. For example, the firstconductive elements 532 can be solder balls or other appropriate conductive objects, such as solder bumps. In the embodiment, there may also be someperipheral devices 502 disposed on the carryingsurface 510 a of thecarrier 510, wherein theperipheral devices 502 may be passive devices, such as capacitors, resistors, or inductors, which are electrically connected with thechip 520 via thecarrier 510. - The
encapsulation 540 is disposed on the whole carryingsurface 510 a of thecarrier 510 to encapsulate thechip 520, the firstconductive elements 532, thecommon contacts 512, thebonding pads 514, thewires 560 and theperipheral devices 502. Particularly, theencapsulation 540 exposes a top portion of each firstconductive element 532. In addition, theconductive film 550 is directly attached on a top surface of theencapsulation 540 so as to connect with the firstconductive elements 532. - By applying a common voltage on the
conductive film 550 through thecommon contacts 512, theconductive film 550 can serve as a common plane in thechip package 500 to provide an EMI shielding effect. Specifically, theconductive film 550 of the embodiment can be manufactured by spraying a conductive material on the top surface of theencapsulation 540. Therefore, theconductive film 550 can be electrically connected with thecommon contacts 512 via the firstconductive elements 532. - The
chip package 500 further comprise a plurality ofsolder balls back surface 510 b of thecarrier 510. Thesolder balls 572 are distributed in the periphery of theback surface 510 b and connected with thecommon contacts 512. Thus, theconductive film 550 can be electrically connected with an external circuitry for the common voltage via thesolder balls 572. Besides, thesolder balls 574 are distributed in the center region of theback surface 510 b and electrically connected with thebonding pads 514 via thecarrier 510. Thechip 520 and theperipheral devices 502 can be connected with another external circuitry for driving signals via thesolder balls 574. - Similar to the above illustrations of
FIGS. 1B , 1C andFIGS. 3B , 3C, thechip 520 and theperipheral devices 502 of the aforementioned embodiment may further be electrically connected with thecommon contacts 512 to share the common voltage with theconductive film 550 by rearranging thewires 560 and the interconnections of thecarrier 510. Referring toFIG. 5B andFIG. 5C , which respectively show other chip packages utilizing different types of circuit substrate as carriers in comparison with that inFIG. 5A . Since most of the elements in the chip packages ofFIG. 5B andFIG. 5C have been described in the aforementioned embodiment, details are not repeated herein. - As shown in
FIG. 5B , in addition to thecommon contacts 512, thecarrier 500 further has at least one extendingcontact 516 on the carryingsurface 510 a, wherein the extendingcontact 516 is electrically connected with thecommon contacts 512 via theinterconnections 590 in thecarrier 510. In addition, thechip 520 and thebonding pads 514 may be electrically connected with the extendingcontact 516 via a part of thewires 560. Thus, thechip 520 and theperipheral devices 502 can take the common voltage from thecommon contacts 512 as, for example, a ground voltage. -
FIG. 5C shows anotherchip package 500 with different arrangement of solder balls, wherein thesolder balls 572 for providing the common voltage is disposed in the center region of theback surface 510 b and electrically connected with thecommon contacts 512 via theinterconnections 590 in thecarrier 510. In addition, thesolder balls 574 for providing the driving signals are distributed in the periphery of theback surface 510 b and electrically connected with thebonding pads 514 via thecarrier 510. - In order to provide a more detailed and clear disclosure of the present invention, a chip package process for fabricating the aforementioned chip packages 500 is illustrated in the following. Since most of the elements of the chip packages 500 have been mentioned in the aforementioned embodiments, detailed descriptions are not repeated in the following.
-
FIGS. 6A˜6E show the chip package process according to an embodiment of the present. First, as shown inFIG. 6A , thecarrier 510 having the carryingsurface 510 a and theback surface 510 b is provided. Then, as shown inFIG. 6B , thechip 520 and theperipheral devices 502 are disposed on the carryingsurface 510 a of thecarrier 510. The chip is bonded to thecarrier 510 by wire bonding, flip chip bonding or other appropriate bonding manners. In addition, theperipheral devices 502 may be mounted on thecarrier 510 by SMT. - Next, as shown in
FIG. 6C , the firstconductive elements 532 are formed on the correspondingcommon contacts 512. In the embodiment, the firstconductive elements 532 are fabricated by forming a solder ball on eachcommon contact 512 respectively. Then, as shown inFIG. 6D , theencapsulation 540 is formed on the whole carryingsurface 510 a of the carrier to encapsulate thechip 520, theperipheral devices 502, thecommon contacts 512, thebonding pads 514, thewires 560 and the firstconductive elements 532. It is noted that theencapsulation 540 shall expose a top portion of each firstconductive element 532. - Thereafter, as shown in
FIG. 6E , theconductive film 550 is formed by spraying a conductive material on the top surface of theencapsulation 540. Therefore, theconductive film 550 can be electrically connected to thecommon contacts 512 via the firstconductive elements 532. After that, thesolder balls back surface 510 b of thecarrier 510, wherein thesolder balls chip 520, theperipheral devices 502 and/or the firstconductive elements 532 via thecarrier 510 respectively. - It is noted that the above fabricating process as shown in
FIGS. 6A˜6E focuses on a single chip package. Practically, the above fabricating process is applied on an array type carrier and then forms a plurality of chip packages at the same time. Thus, a singulation process may further be carried out after the steps mentioned above to achieve a single chip package. - In summary, the present invention provides structures and the fabricating method thereof to integrate a conductive film into a chip package, wherein the conductive film can be taken as a common plane, so as to solve the problem of EMI for the chip package. Therefore, products utilizing the chip package and the chip packaging process can achieve superior electrical performance and higher reliability.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (19)
1.-11. (canceled)
12. A chip package, comprising:
a carrier, including a carrying surface and a back surface opposite to the carrying surface, the carrier further including a plurality of common contacts in the periphery of the carrying surface;
a chip, disposed on the carrying surface and electrically connected to the carrier;
a plurality of conductive elements, disposed on the common contacts respectively;
an encapsulation, disposed on the carrying surface and encapsulating the chip and the conductive elements, while a top portion of each of the conductive elements is exposed; and
a conductive film, disposed over the encapsulation and the conductive elements, so as to connect to the common contacts via the conductive elements, wherein the conductive film is directly attached to a top surface of the encapsulation and the top portions of the conductive elements.
13. The chip package according to claim 12 , wherein the conductive elements comprise a plurality of solder balls.
14. The chip package according to claim 12 , wherein the conductive film is a metal film.
15. The chip package according to claim 12 , wherein the carrier is a circuit substrate.
16. The chip package according to claim 12 , further comprising a plurality of wires connected between the chip and the carrier and encapsulated by the encapsulation.
17. The chip package according to claim 12 , further comprising a plurality of solder balls disposed on the back surface of the carrier, the solder balls being electrically connected with at least one of the chip and the conductive elements via the carrier respectively.
18. The chip package according to claim 17 , wherein a subset of the solder balls electrically connected with the chip is located in the center of the back surface of the carrier, and another subset of the solder balls electrically connected with the conductive elements is located in the periphery of the back surface of the carrier.
19. A chip package, comprising:
a carrier, including a carrying surface, a back surface opposite to the carrying surface, and a first side surface surrounding and connected between the carrying surface and the back surface, the carrier further including a plurality of common contacts at the periphery of the carrying surface;
a chip, disposed on the carrying surface and electrically connected to the carrier;
a plurality of conductive elements, disposed on and connected to the common contacts respectively;
an encapsulation, covering the carrying surface and encapsulating the chip and the conductive elements, while a top portion of each of the conductive elements is exposed; and
a conductive layer, provided with a second side surface and directly attached to a top surface of the encapsulation and the top portions of the conductive elements, wherein the first side surface of the carrier is coplanar with the second side surface of the conductive layer.
20. The chip package according to claim 19 , further comprising a peripheral device disposed adjacent to the carrying surface and electrically connected to the carrier, and the encapsulation encapsulates the peripheral device.
21. The chip package according to claim 19 , wherein the conductive elements comprise a plurality of solder balls.
22. The chip package according to claim 19 , wherein the carrier is a circuit substrate.
23. The chip package according to claim 19 , further comprising a plurality of solder balls, a subset of the solder balls electrically connected with at least one of the conductive elements and located adjacent to the periphery of the back surface of the carrier.
24. A chip packaging process, comprising:
providing a carrier which includes a carrying surface and a back surface opposite to the carrying surface, the carrier further including a plurality of common contacts in the periphery of the carrying surface;
disposing a chip on the carrying surface and electrically connecting the chip to the carrier;
forming a plurality of conductive elements on the common contacts respectively;
forming an encapsulation covering the carrying surface and encapsulating the chip and the conductive elements, the encapsulation exposing a top portion of each of the conductive elements; and
forming a conductive film on a top surface of the encapsulation so as to electrically connect the conductive film to the common contacts via the conductive elements.
25. The chip packaging process according to claim 24 , wherein forming the conductive film includes spraying a conductive material on the top surface of the encapsulation.
26. The chip packaging process according to claim 24 , wherein forming the conductive film includes spraying a conductive material on the top surface of the encapsulation and the top portions of the conductive elements.
27. The chip packaging process according to claim 24 , wherein forming the conductive elements includes forming a solder ball on each common contact respectively.
28. The chip packaging process according to claim 24 , wherein the chip is electrically connected to the carrier by flip chip bonding.
29. The chip packaging process according to claim 24 , wherein the chip is electrically connected to the carrier by wire bonding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/293,782 US20140346654A1 (en) | 2006-11-30 | 2014-06-02 | Chip package |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/565,299 US20080128890A1 (en) | 2006-11-30 | 2006-11-30 | Chip package and fabricating process thereof |
US12/491,742 US8866280B2 (en) | 2006-11-30 | 2009-06-25 | Chip package |
US14/293,782 US20140346654A1 (en) | 2006-11-30 | 2014-06-02 | Chip package |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/491,742 Continuation US8866280B2 (en) | 2006-11-30 | 2009-06-25 | Chip package |
Publications (1)
Publication Number | Publication Date |
---|---|
US20140346654A1 true US20140346654A1 (en) | 2014-11-27 |
Family
ID=39474765
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/565,299 Abandoned US20080128890A1 (en) | 2006-11-30 | 2006-11-30 | Chip package and fabricating process thereof |
US12/491,742 Active US8866280B2 (en) | 2006-11-30 | 2009-06-25 | Chip package |
US14/293,782 Abandoned US20140346654A1 (en) | 2006-11-30 | 2014-06-02 | Chip package |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/565,299 Abandoned US20080128890A1 (en) | 2006-11-30 | 2006-11-30 | Chip package and fabricating process thereof |
US12/491,742 Active US8866280B2 (en) | 2006-11-30 | 2009-06-25 | Chip package |
Country Status (3)
Country | Link |
---|---|
US (3) | US20080128890A1 (en) |
CN (1) | CN101188226B (en) |
TW (1) | TWI373121B (en) |
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Also Published As
Publication number | Publication date |
---|---|
US20090261470A1 (en) | 2009-10-22 |
US8866280B2 (en) | 2014-10-21 |
CN101188226B (en) | 2011-04-20 |
TW200824088A (en) | 2008-06-01 |
TWI373121B (en) | 2012-09-21 |
CN101188226A (en) | 2008-05-28 |
US20080128890A1 (en) | 2008-06-05 |
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