US20140374838A1 - FinFETs with Nitride Liners and Methods of Forming the Same - Google Patents
FinFETs with Nitride Liners and Methods of Forming the Same Download PDFInfo
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- US20140374838A1 US20140374838A1 US13/924,352 US201313924352A US2014374838A1 US 20140374838 A1 US20140374838 A1 US 20140374838A1 US 201313924352 A US201313924352 A US 201313924352A US 2014374838 A1 US2014374838 A1 US 2014374838A1
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- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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Definitions
- Fin Field-Effect Transistors were thus developed.
- the FinFETs include vertical semiconductor fins above a substrate.
- the semiconductor fins are used to form source and drain regions, and channel regions between the source and drain regions. Shallow Trench Isolation (STI) regions are formed to define the semiconductor fins.
- the FinFETs also include gate stacks, which are formed on the sidewalls and the top surfaces of the semiconductor fins.
- various wet etch steps and clean steps are performed. These steps cause the recess of the top surfaces of STI regions. As a result of the wet etch steps and clean steps, the center portions of the top surfaces of the STI regions may be lower than edge portions of the top surfaces of the STI regions.
- the STI regions with such a surface profile are known as having a (concave shape) smiling profile.
- parasitic capacitors are formed between the gate electrodes of the FinFETs and the neighboring semiconductor strip, wherein the STI regions act as the insulators of the parasitic capacitors.
- the parasitic capacitance of the parasitic capacitors adversely affects the performance of the respective integrated circuit, and needs to be reduced.
- Germanium may form germanium oxide with the neighboring oxides in the STI regions.
- the germanium oxide causes the increase in the leakage current of the resulting FinFET.
- FIGS. 1 through 12 are cross-sectional views of intermediate stages in the manufacturing of Shallow Trench Isolation (STI) regions and Fin Field-Effect Transistors (FinFETs) in accordance with some exemplary embodiments.
- STI Shallow Trench Isolation
- FinFETs Fin Field-Effect Transistors
- Shallow Trench Isolation (STI) regions, Fin Field-Effect Transistors (FinFETs), and methods of forming the same are provided.
- the intermediate stages in the formation of the STI regions and the FinFETs are illustrated in accordance with exemplary embodiments. The variations of the embodiment are discussed.
- like reference numbers are used to designate like elements.
- semiconductor substrate 20 which is a part of semiconductor wafer 100 , is provided.
- semiconductor substrate 20 includes crystalline silicon.
- Other commonly used materials such as carbon, germanium, gallium, boron, arsenic, nitrogen, indium, and/or phosphorus, and the like, may also be included in semiconductor substrate 20 .
- Semiconductor substrate 20 may be a bulk substrate or a Semiconductor-On-Insulator (SOI) substrate.
- SOI Semiconductor-On-Insulator
- Pad layer 22 and mask layer 24 are formed on semiconductor substrate 20 .
- Pad layer 22 may be a thin film comprising silicon oxide formed, for example, using a thermal oxidation process.
- Pad layer 22 may act as an adhesion layer between semiconductor substrate 20 and mask layer 24 .
- mask layer 24 is formed of silicon nitride, for example, using Low-Pressure Chemical Vapor Deposition (LPCVD).
- LPCVD Low-Pressure Chemical Vapor Deposition
- mask layer 24 is formed by thermal nitridation of silicon, Plasma Enhanced Chemical Vapor Deposition (PECVD), or plasma anodic nitridation.
- PECVD Plasma Enhanced Chemical Vapor Deposition
- Photo resist 26 is formed on mask layer 24 and is then patterned, forming openings 28 in photo resist 26 .
- mask layer 24 and pad layer 22 are etched through openings 28 , exposing underlying semiconductor substrate 20 .
- the exposed semiconductor substrate 20 is then etched, forming trenches 32 .
- the portions of semiconductor substrate 20 between neighboring trenches 32 form semiconductor strips 30 .
- Trenches 32 may be strips (when viewed in the top view of wafer 100 ) that are parallel to each other, and closely located from each other.
- photo resist 26 is removed.
- a cleaning step may be performed to remove the native oxide formed on the surfaces of semiconductor substrate 20 .
- the cleaning may be performed using diluted hydrofluoric (HF) acid, for example.
- dielectric liner 34 is formed in trenches 32 and on the sidewalls of semiconductor strips 30 , pad oxide 22 , and hard mask 24 .
- Dielectric liner 34 may be a conformal layer whose horizontal portions and vertical portions have thicknesses close to each other (for example, with difference smaller than about 20 percent).
- dielectric liner 34 comprises a non-oxide containing material that is free from oxygen.
- dielectric liner 34 comprises silicon nitride.
- dielectric liner 34 comprises silicon carbon nitride, silicon oxynitride, or the like.
- Dielectric liner 34 may be formed using a deposition technique such as Sub Atmospheric Vapor Deposition (SACVD), Atomic Layer Deposition (ALD), or the like.
- SACVD Sub Atmospheric Vapor Deposition
- ALD Atomic Layer Deposition
- dielectric region 38 is filled with a dielectric material to form dielectric region 38 , as shown in FIG. 4 .
- the top surface of dielectric region 38 is higher than the top surface of mask layer 24 .
- the filling method may be selected from spin-on, Flowable Chemical Vapor Deposition (FCVD), and the like.
- Dielectric region 38 may include silicon oxide, and hence is referred to as oxide region 38 hereinafter.
- oxide region 38 is formed using High Aspect-Ratio Process (HARP), High-Density Plasma CVD (HDPCVD), or the like.
- HTP High Aspect-Ratio Process
- HDPCVD High-Density Plasma CVD
- the process gases may include tetraethylorthosilicate (TEOS) and O 3 (ozone) (in the HARP process), or SiH 4 and O 2 (in the HDPCVD process).
- TEOS tetraethylorthosilicate
- O 3 ozone
- SiH 4 and O 2 in the HDPCVD process
- the annealing includes a wet anneal step, which is performed using In-Situ Steam Generation (ISSG), in which the steam of water is generated.
- the anneal step may be performed at temperatures between about 800° C. and about 1,050° C.
- the duration of the ISSG may be between about 1 minute and about 20 minutes.
- the annealing is performed using a dry anneal method, wherein the process gas my include an O 2 , H 2 , N 2 , or the like, and the temperature may be between about 200° C., and about 700° C.
- the duration of the dry anneal may be between about 30 minutes and about 120 minutes.
- the anneal step includes the wet anneal step followed by the dry anneal step.
- a planarization such as a Chemical Mechanical Polish (CMP) is then performed, as shown in FIG. 5 , and hence STI regions 40 are formed, which include the remaining portions of dielectric liner 34 and dielectric region 38 .
- Mask layer 24 or dielectric liner 34 may be used as the CMP stop layer, and hence the top surface of the remaining oxide region 38 is substantially level with the top surface of mask layer 24 or dielectric liner 34 .
- the discrete portions of dielectric liner 34 are referred to as nitride liners 34 hereinafter, although they may be formed of other materials other than nitride.
- oxide regions 38 in STI regions 40 are recessed to form recesses 42 .
- the recessing may be performed in an isotropic etching step such as a wet etching step.
- the etchant is selected, so that the etching rate of oxide regions 38 is much higher than the etching rate of nitride liner 34 and mask layer 24 (if it is exposed).
- the etchant may include a diluted hydrogen fluoride (HF) solution.
- HF diluted hydrogen fluoride
- the top surfaces 38 A of oxide regions 38 are lower than the top surfaces 30 A of semiconductor strips 30 .
- top surfaces 38 A may be recessed from top surfaces 30 A by depth D1, which may be greater than about 100 ⁇ , and may also be between about 20 ⁇ and about 500 ⁇ .
- dielectric region 44 is formed in recesses 42 in FIG. 6 .
- Dielectric region 44 contacts the sidewall portions of nitride liners 34 .
- dielectric region 44 is formed of a material that is selected from the same candidate materials of dielectric liners 34 .
- dielectric region 44 and dielectric liners 34 may be formed of a same material, or may be formed of different materials.
- dielectric region 44 comprises silicon nitride, and hence is referred to as nitride region 44 hereinafter, although it cannot be formed of other dielectric materials.
- Nitride region 44 may be formed using a deposition technique such as SACVD, ALD, or the like. The top surface of dielectric region 44 may be higher than the top surface of mask layer 24 .
- a CMP is then performed.
- the CMP is stopped on the top surfaces 30 A of semiconductor strips 30 , as shown in FIG. 8 .
- pad oxide layer 22 ( FIG. 7 ) is also removed.
- the CMP may also be stopped on the top surface of pad oxide layers 22 .
- pad oxide layer 22 remains after the CMP, and an etching process is used to remove pad oxide layer 22 .
- nitride region 44 may be separated into a plurality of discrete regions that are spaced apart from each other by semiconductor strips 30 .
- each of STI regions 40 includes a piece of nitride liner 34 , one of oxide regions 38 , and one of nitride regions 44 .
- semiconductor strips 30 which are between opposite sidewalls of STI regions 40 , are etched to form trenches 46 .
- bottoms 46 A of trenches 46 are substantially level with top surface 38 A of oxide regions 38 .
- bottoms 46 A of trenches 46 are higher than or lower than top surfaces 38 A of oxide regions 38 .
- the etching may be performed using dry etching, with the etching gas selected from CF 4 , Cl 2 , NF 3 , SF 6 , and combinations thereof.
- the etching may be performed using wet etching, for example, using Tetra-Methyl Ammonium Hydroxide (TMAH), a potassium hydroxide (KOH) solution, or the like, as the etchant.
- TMAH Tetra-Methyl Ammonium Hydroxide
- KOH potassium hydroxide
- the etching rate for etching nitride liners 34 and nitride regions 44 is significantly lower than the etching rate of oxide regions 38 , for example, with an etching selectivity greater than about 30 or 50.
- nitride liners 34 and nitride regions 44 remain.
- a pre-clean may be performed to remove any native oxide on the top surface of semiconductor strips 30 .
- diluted HF is used for the pre-clean.
- the etchant for forming trenches 46 and the cleaning solutions typically have a high etching rate for etching oxide, in convention formation processes, the profile of the respective STI regions is undesirably changed, and the widths of the trenches are widened.
- FIG. 10 illustrates the epitaxy of semiconductor regions 48 , which are also referred to as semiconductor re-growth regions throughout the description.
- Semiconductor regions 48 are epitaxially grown from the exposed surfaces of semiconductor strips 30 , which exposed surfaces are exposed to trenches 46 ( FIG. 9 ).
- semiconductor regions 48 comprise silicon germanium, with the atomic percentage of germanium greater than zero percent, and equal to or smaller than 100 percent. When the atomic percentage of germanium is 100 percent, semiconductor regions 48 are formed of pure germanium.
- semiconductor regions 48 comprise a III-V compound semiconductor material selected from InAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, and combinations thereof.
- Semiconductor regions 48 may be a homogenous region, with the bottom portions and top portions formed of a same material that has a same composition.
- Semiconductor regions 48 may also be a composite region, with bottom portions and top portions comprising different materials or having different compositions.
- the upper portions of semiconductor regions 48 may have greater lattice mismatch with semiconductor strips 30 than lower portions.
- semiconductor regions 48 comprise silicon germanium, with the upper portions having greater germanium percentages than lower portions.
- the epitaxy is continued until the top surfaces of semiconductor regions 48 are higher than top surfaces 44 A of nitride regions 44 .
- a CMP is then performed until semiconductor regions 48 do not have portions left overlapping nitride regions 44 .
- the portions of semiconductor regions 48 between STI regions 40 remain after the CMP.
- nitride regions 44 are recessed. In some embodiments, the recessing is stopped where nitride regions 44 still have some portions left, as shown in FIG. 11 . Accordingly, the resulting STI regions 40 include nitride liner 34 , oxide region 38 , and nitride region 44 , wherein nitride liner 34 and nitride region 44 in combination enclose oxide region 38 therein. As shown in FIG. 11 , each of nitride liners 34 may form a basin, with one of oxide regions 38 disposed in each of the basin. A nitride region 44 further covers the basin. In some embodiments, nitride liners 34 and the respective overlying nitride region 44 may form a full enclosing shell, which fully encloses oxide region 38 therein, with no opening in the shell.
- semiconductor fins 52 include the top portions of semiconductor regions 48 and do not include semiconductor strips 30 . In alternative embodiments, semiconductor fins 52 include semiconductor regions 48 and the top portions of semiconductor strips 30 .
- FIG. 12 illustrate the formation of FinFET 58 , which includes forming gate dielectric 54 to cover the top surfaces and sidewalls of fins 52 .
- Gate dielectric 54 may be formed through a thermal oxidation, and hence may include thermal silicon oxide.
- gate dielectric 54 may be formed through a deposition step, and may comprise high-k dielectric materials.
- Gate electrode 56 is then formed on gate dielectric 54 .
- gate electrode 56 covers more than one fin 52 , so that the resulting FinFET 58 comprises more than one fin 52 .
- each of fins 52 may be used to form one FinFET.
- Gate dielectric 54 and gate electrode 56 may be formed using a gate-first approach or a gate last approach. The details of the gate-first approach or the gate last approach are not described herein.
- a dielectric liner which may be a silicon nitride liner, is formed to separate the semiconductor strips from the neighboring STI regions. Accordingly, in the formation of the recesses (which are used for epitaxially re-growing semiconductor regions) and the cleaning steps, the widths of the recesses are not adversely increased. In addition, in the recessing of STI regions for forming semiconductor re-growth regions, the STI regions are protected by the dielectric regions such as silicon nitride regions. Accordingly, the profile of the STI regions is well maintained due to the low etching rate, and STI regions will not have smiling profiles. This results in the reduction in the adverse parasitic capacitance between the semiconductor strips and the gate electrode.
- germanium oxide is formed between germanium-containing re-growth regions and the neighboring STI regions, which causes the increase in leakage current.
- an integrated circuit structure includes a semiconductor substrate, which includes a semiconductor strip.
- a STI region is on a side of the semiconductor strip.
- the STI region includes a first portion comprising an oxide and a second portion free from oxide. The second portion separates the first portion from the semiconductor substrate.
- a semiconductor fin is over and aligned to the semiconductor strip, wherein the semiconductor fin is higher than a top surface of the STI region.
- an integrated circuit structure includes a semiconductor substrate comprising a semiconductor strip, and STI regions on opposite sides of the semiconductor strip.
- Each of the STI regions includes an oxide region, and a silicon nitride region over and in contact with the oxide region.
- a semiconductor fin is over and aligned to the semiconductor strip. The semiconductor fin is higher than a top surface of the silicon nitride region.
- a method includes etching a semiconductor substrate to form a recess, forming a nitride liner lining a bottom and a sidewall of the recess, forming an oxide region in the recess and over the nitride liner, and forming a nitride region to cover the oxide region.
- the nitride region, the nitride liner, and the oxide region in combination form a STI region.
- the method further includes removing a top portion of the nitride region and a top portion of the nitride liner.
- a semiconductor strip on a side and contacting the nitride liner forms a semiconductor fin, with the semiconductor fin higher than the STI region.
Abstract
An integrated circuit structure includes a semiconductor substrate, which includes a semiconductor strip. A Shallow Trench Isolation (STI) region is on a side of the semiconductor strip. The STI region includes a first portion comprising an oxide and a second portion free from oxide. The second portion separates the first portion from the semiconductor substrate. A semiconductor fin is over and aligned to the semiconductor strip, wherein the semiconductor fin is higher than a top surface of the STI region.
Description
- With the increasing down-scaling of integrated circuits and the increasingly demanding requirements to the speed of integrated circuits, transistors need to have higher drive currents with increasingly smaller dimensions. Fin Field-Effect Transistors (FinFET) were thus developed. The FinFETs include vertical semiconductor fins above a substrate. The semiconductor fins are used to form source and drain regions, and channel regions between the source and drain regions. Shallow Trench Isolation (STI) regions are formed to define the semiconductor fins. The FinFETs also include gate stacks, which are formed on the sidewalls and the top surfaces of the semiconductor fins.
- In the formation of the STI regions and the formation of the FinFETs, various wet etch steps and clean steps are performed. These steps cause the recess of the top surfaces of STI regions. As a result of the wet etch steps and clean steps, the center portions of the top surfaces of the STI regions may be lower than edge portions of the top surfaces of the STI regions. The STI regions with such a surface profile are known as having a (concave shape) smiling profile.
- In some FinFETs, there are semiconductor strips underlying the semiconductor fins. In the respective FinFETs, parasitic capacitors are formed between the gate electrodes of the FinFETs and the neighboring semiconductor strip, wherein the STI regions act as the insulators of the parasitic capacitors. The parasitic capacitance of the parasitic capacitors adversely affects the performance of the respective integrated circuit, and needs to be reduced.
- In addition, some of the FinFETs use germanium-containing materials to form fins. Germanium may form germanium oxide with the neighboring oxides in the STI regions. The germanium oxide causes the increase in the leakage current of the resulting FinFET.
- For a more complete understanding of the embodiments, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
-
FIGS. 1 through 12 are cross-sectional views of intermediate stages in the manufacturing of Shallow Trench Isolation (STI) regions and Fin Field-Effect Transistors (FinFETs) in accordance with some exemplary embodiments. - The making and using of the embodiments of the disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are illustrative, and do not limit the scope of the disclosure.
- Shallow Trench Isolation (STI) regions, Fin Field-Effect Transistors (FinFETs), and methods of forming the same are provided. The intermediate stages in the formation of the STI regions and the FinFETs are illustrated in accordance with exemplary embodiments. The variations of the embodiment are discussed. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements.
- Referring to
FIG. 1 ,semiconductor substrate 20, which is a part ofsemiconductor wafer 100, is provided. In some embodiments,semiconductor substrate 20 includes crystalline silicon. Other commonly used materials, such as carbon, germanium, gallium, boron, arsenic, nitrogen, indium, and/or phosphorus, and the like, may also be included insemiconductor substrate 20.Semiconductor substrate 20 may be a bulk substrate or a Semiconductor-On-Insulator (SOI) substrate. -
Pad layer 22 andmask layer 24 are formed onsemiconductor substrate 20.Pad layer 22 may be a thin film comprising silicon oxide formed, for example, using a thermal oxidation process.Pad layer 22 may act as an adhesion layer betweensemiconductor substrate 20 andmask layer 24. In some embodiments,mask layer 24 is formed of silicon nitride, for example, using Low-Pressure Chemical Vapor Deposition (LPCVD). In other embodiments,mask layer 24 is formed by thermal nitridation of silicon, Plasma Enhanced Chemical Vapor Deposition (PECVD), or plasma anodic nitridation.Mask layer 24 is used as a hard mask during subsequent photolithography processes.Photo resist 26 is formed onmask layer 24 and is then patterned, formingopenings 28 in photo resist 26. - Referring to
FIG. 2 ,mask layer 24 andpad layer 22 are etched throughopenings 28, exposingunderlying semiconductor substrate 20. The exposedsemiconductor substrate 20 is then etched, formingtrenches 32. The portions ofsemiconductor substrate 20 between neighboringtrenches 32form semiconductor strips 30.Trenches 32 may be strips (when viewed in the top view of wafer 100) that are parallel to each other, and closely located from each other. After the etching ofsemiconductor substrate 20,photo resist 26 is removed. Next, a cleaning step may be performed to remove the native oxide formed on the surfaces ofsemiconductor substrate 20. The cleaning may be performed using diluted hydrofluoric (HF) acid, for example. - Next, as shown in
FIG. 3 ,dielectric liner 34 is formed intrenches 32 and on the sidewalls ofsemiconductor strips 30,pad oxide 22, andhard mask 24.Dielectric liner 34 may be a conformal layer whose horizontal portions and vertical portions have thicknesses close to each other (for example, with difference smaller than about 20 percent). In some embodiments,dielectric liner 34 comprises a non-oxide containing material that is free from oxygen. In some exemplary embodiments,dielectric liner 34 comprises silicon nitride. In other embodiments,dielectric liner 34 comprises silicon carbon nitride, silicon oxynitride, or the like.Dielectric liner 34 may be formed using a deposition technique such as Sub Atmospheric Vapor Deposition (SACVD), Atomic Layer Deposition (ALD), or the like. - Next, the remaining portions of
trenches 32 are filled with a dielectric material to formdielectric region 38, as shown inFIG. 4 . The top surface ofdielectric region 38 is higher than the top surface ofmask layer 24. In some embodiments, the filling method may be selected from spin-on, Flowable Chemical Vapor Deposition (FCVD), and the like.Dielectric region 38 may include silicon oxide, and hence is referred to asoxide region 38 hereinafter. In alternative embodiments,oxide region 38 is formed using High Aspect-Ratio Process (HARP), High-Density Plasma CVD (HDPCVD), or the like. In the deposition of the respectivedielectric region 38, the process gases may include tetraethylorthosilicate (TEOS) and O3 (ozone) (in the HARP process), or SiH4 and O2 (in the HDPCVD process). - Wafer 100 is then annealed, wherein the annealing is represented by
arrows 39. In some embodiments, the annealing includes a wet anneal step, which is performed using In-Situ Steam Generation (ISSG), in which the steam of water is generated. The anneal step may be performed at temperatures between about 800° C. and about 1,050° C. The duration of the ISSG may be between about 1 minute and about 20 minutes. In alternative embodiments, the annealing is performed using a dry anneal method, wherein the process gas my include an O2, H2, N2, or the like, and the temperature may be between about 200° C., and about 700° C. The duration of the dry anneal may be between about 30 minutes and about 120 minutes. In yet alternative embodiments, the anneal step includes the wet anneal step followed by the dry anneal step. - A planarization such as a Chemical Mechanical Polish (CMP) is then performed, as shown in
FIG. 5 , and henceSTI regions 40 are formed, which include the remaining portions ofdielectric liner 34 anddielectric region 38.Mask layer 24 ordielectric liner 34 may be used as the CMP stop layer, and hence the top surface of theremaining oxide region 38 is substantially level with the top surface ofmask layer 24 ordielectric liner 34. Furthermore, the discrete portions ofdielectric liner 34 are referred to asnitride liners 34 hereinafter, although they may be formed of other materials other than nitride. - Referring to
FIG. 6 ,oxide regions 38 inSTI regions 40 are recessed to form recesses 42. The recessing may be performed in an isotropic etching step such as a wet etching step. The etchant is selected, so that the etching rate ofoxide regions 38 is much higher than the etching rate ofnitride liner 34 and mask layer 24 (if it is exposed). For example, the etchant may include a diluted hydrogen fluoride (HF) solution. After the recessing, thetop surfaces 38A ofoxide regions 38 are lower than thetop surfaces 30A of semiconductor strips 30. Furthermore,top surfaces 38A may be recessed fromtop surfaces 30A by depth D1, which may be greater than about 100 Å, and may also be between about 20 Å and about 500 Å. - Next, as shown in
FIG. 7 ,dielectric region 44 is formed inrecesses 42 inFIG. 6 .Dielectric region 44 contacts the sidewall portions ofnitride liners 34. In some embodiments,dielectric region 44 is formed of a material that is selected from the same candidate materials ofdielectric liners 34. Furthermore,dielectric region 44 anddielectric liners 34 may be formed of a same material, or may be formed of different materials. In some exemplary embodiments,dielectric region 44 comprises silicon nitride, and hence is referred to asnitride region 44 hereinafter, although it cannot be formed of other dielectric materials.Nitride region 44 may be formed using a deposition technique such as SACVD, ALD, or the like. The top surface ofdielectric region 44 may be higher than the top surface ofmask layer 24. - A CMP is then performed. In some embodiments, the CMP is stopped on the
top surfaces 30A of semiconductor strips 30, as shown inFIG. 8 . In which embodiments, pad oxide layer 22 (FIG. 7 ) is also removed. In alternative embodiments, the CMP may also be stopped on the top surface of pad oxide layers 22. In which embodiments,pad oxide layer 22 remains after the CMP, and an etching process is used to removepad oxide layer 22. As shown inFIG. 8 ,nitride region 44 may be separated into a plurality of discrete regions that are spaced apart from each other by semiconductor strips 30. As a result of the formation and the CMP ofnitride region 44, each ofSTI regions 40 includes a piece ofnitride liner 34, one ofoxide regions 38, and one ofnitride regions 44. - Next, as shown in
FIG. 9 , semiconductor strips 30, which are between opposite sidewalls ofSTI regions 40, are etched to formtrenches 46. In some embodiments,bottoms 46A oftrenches 46 are substantially level withtop surface 38A ofoxide regions 38. In alternative embodiments,bottoms 46A oftrenches 46 are higher than or lower thantop surfaces 38A ofoxide regions 38. The etching may be performed using dry etching, with the etching gas selected from CF4, Cl2, NF3, SF6, and combinations thereof. In alternative embodiments, the etching may be performed using wet etching, for example, using Tetra-Methyl Ammonium Hydroxide (TMAH), a potassium hydroxide (KOH) solution, or the like, as the etchant. The etching rate for etchingnitride liners 34 andnitride regions 44 is significantly lower than the etching rate ofoxide regions 38, for example, with an etching selectivity greater than about 30 or 50. Hence, after the formation oftrenches 46,nitride liners 34 andnitride regions 44 remain. - After the recessing, a pre-clean may be performed to remove any native oxide on the top surface of semiconductor strips 30. In some embodiments, diluted HF is used for the pre-clean. During the etching for forming
trenches 46 and the pre-clean process, since the etching rate ofnitride liners 34 is very low, the widths oftrenches 46 remains unchanged. This is different from in conventional formation processes, in which the oxide in STI regions is etched significantly by the etchant for forming trenches and the pre-clean solution. Since the etchant for formingtrenches 46 and the cleaning solutions typically have a high etching rate for etching oxide, in convention formation processes, the profile of the respective STI regions is undesirably changed, and the widths of the trenches are widened. -
FIG. 10 illustrates the epitaxy ofsemiconductor regions 48, which are also referred to as semiconductor re-growth regions throughout the description.Semiconductor regions 48 are epitaxially grown from the exposed surfaces of semiconductor strips 30, which exposed surfaces are exposed to trenches 46 (FIG. 9 ). In some embodiments,semiconductor regions 48 comprise silicon germanium, with the atomic percentage of germanium greater than zero percent, and equal to or smaller than 100 percent. When the atomic percentage of germanium is 100 percent,semiconductor regions 48 are formed of pure germanium. In alternative embodiments,semiconductor regions 48 comprise a III-V compound semiconductor material selected from InAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, and combinations thereof.Semiconductor regions 48 may be a homogenous region, with the bottom portions and top portions formed of a same material that has a same composition.Semiconductor regions 48 may also be a composite region, with bottom portions and top portions comprising different materials or having different compositions. For example, the upper portions ofsemiconductor regions 48 may have greater lattice mismatch withsemiconductor strips 30 than lower portions. In some embodiments,semiconductor regions 48 comprise silicon germanium, with the upper portions having greater germanium percentages than lower portions. - The epitaxy is continued until the top surfaces of
semiconductor regions 48 are higher thantop surfaces 44A ofnitride regions 44. A CMP is then performed untilsemiconductor regions 48 do not have portions left overlappingnitride regions 44. The portions ofsemiconductor regions 48 betweenSTI regions 40, however, remain after the CMP. - Next, as shown in
FIG. 11 ,nitride regions 44 are recessed. In some embodiments, the recessing is stopped wherenitride regions 44 still have some portions left, as shown inFIG. 11 . Accordingly, the resultingSTI regions 40 includenitride liner 34,oxide region 38, andnitride region 44, whereinnitride liner 34 andnitride region 44 in combination encloseoxide region 38 therein. As shown inFIG. 11 , each ofnitride liners 34 may form a basin, with one ofoxide regions 38 disposed in each of the basin. Anitride region 44 further covers the basin. In some embodiments,nitride liners 34 and the respectiveoverlying nitride region 44 may form a full enclosing shell, which fully enclosesoxide region 38 therein, with no opening in the shell. - In alternative embodiments, after the recessing,
nitride regions 44 are removed, andoxide regions 38 are exposed. As a result of the recessing, at least the top portions ofsemiconductor regions 48 are over thetop surfaces 40A ofSTI regions 40, hence formingsemiconductor fins 52. In some embodiments,semiconductor fins 52 include the top portions ofsemiconductor regions 48 and do not include semiconductor strips 30. In alternative embodiments,semiconductor fins 52 includesemiconductor regions 48 and the top portions of semiconductor strips 30. -
FIG. 12 illustrate the formation ofFinFET 58, which includes forming gate dielectric 54 to cover the top surfaces and sidewalls offins 52.Gate dielectric 54 may be formed through a thermal oxidation, and hence may include thermal silicon oxide. Alternatively,gate dielectric 54 may be formed through a deposition step, and may comprise high-k dielectric materials.Gate electrode 56 is then formed ongate dielectric 54. In some embodiments,gate electrode 56 covers more than onefin 52, so that the resultingFinFET 58 comprises more than onefin 52. In alternative embodiments, each offins 52 may be used to form one FinFET. The remaining components of theFinFET 58, including source and drain regions and source and drain silicides (not shown, in a plane other than illustrated), are then formed. The formation processes of these components are known in the art, and hence are not repeated herein.Gate dielectric 54 andgate electrode 56 may be formed using a gate-first approach or a gate last approach. The details of the gate-first approach or the gate last approach are not described herein. - In accordance with the embodiments of the present disclosure, a dielectric liner, which may be a silicon nitride liner, is formed to separate the semiconductor strips from the neighboring STI regions. Accordingly, in the formation of the recesses (which are used for epitaxially re-growing semiconductor regions) and the cleaning steps, the widths of the recesses are not adversely increased. In addition, in the recessing of STI regions for forming semiconductor re-growth regions, the STI regions are protected by the dielectric regions such as silicon nitride regions. Accordingly, the profile of the STI regions is well maintained due to the low etching rate, and STI regions will not have smiling profiles. This results in the reduction in the adverse parasitic capacitance between the semiconductor strips and the gate electrode. In addition, by separating germanium-containing re-growth regions from oxides, the formation of germanium oxide is prevented. As a comparison, in conventional germanium-fin formation processes, germanium oxide is formed between germanium-containing re-growth regions and the neighboring STI regions, which causes the increase in leakage current.
- In accordance with some embodiments, an integrated circuit structure includes a semiconductor substrate, which includes a semiconductor strip. A STI region is on a side of the semiconductor strip. The STI region includes a first portion comprising an oxide and a second portion free from oxide. The second portion separates the first portion from the semiconductor substrate. A semiconductor fin is over and aligned to the semiconductor strip, wherein the semiconductor fin is higher than a top surface of the STI region.
- In accordance with other embodiments, an integrated circuit structure includes a semiconductor substrate comprising a semiconductor strip, and STI regions on opposite sides of the semiconductor strip. Each of the STI regions includes an oxide region, and a silicon nitride region over and in contact with the oxide region. A semiconductor fin is over and aligned to the semiconductor strip. The semiconductor fin is higher than a top surface of the silicon nitride region.
- In accordance with yet other embodiments, a method includes etching a semiconductor substrate to form a recess, forming a nitride liner lining a bottom and a sidewall of the recess, forming an oxide region in the recess and over the nitride liner, and forming a nitride region to cover the oxide region. The nitride region, the nitride liner, and the oxide region in combination form a STI region. The method further includes removing a top portion of the nitride region and a top portion of the nitride liner. A semiconductor strip on a side and contacting the nitride liner forms a semiconductor fin, with the semiconductor fin higher than the STI region.
- Although the embodiments and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the embodiments as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. In addition, each claim constitutes a separate embodiment, and the combination of various claims and embodiments are within the scope of the disclosure.
Claims (21)
1. An integrated circuit structure comprising:
a semiconductor substrate comprising a semiconductor strip;
a Shallow Trench Isolation (STI) region on a side of the semiconductor strip, wherein the STI region comprises:
a first portion comprising an oxide; and
a second portion free from oxide, wherein the second portion separates the first portion from the semiconductor substrate; and
a semiconductor fin over and aligned to the semiconductor strip, wherein the semiconductor fin is higher than a top surface of the STI region.
2. The integrated circuit structure of claim 1 , wherein the STI region further comprises a third portion covering the first portion, wherein the second portion and the third portion enclose the first portion therein, and wherein the third portion is free from oxide.
3. The integrated circuit structure of claim 2 , wherein the second portion of the STI contacts a sidewall of the first portion and a sidewall of the third portion.
4. The integrated circuit structure of claim 1 , wherein the first portion comprises silicon oxide, and wherein the second portion comprises silicon nitride.
5. The integrated circuit structure of claim 1 , wherein the second portion of the STI region comprises a sidewall portion in physical contact with a sidewall of the semiconductor strip, and a bottom portion underlying the first portion and in contact with a top surface of the semiconductor substrate.
6. The integrated circuit structure of claim 1 further comprising a re-growth semiconductor region over the semiconductor strip, with the semiconductor fin being a portion of the re-growth semiconductor region, wherein an interface between the semiconductor strip and the re-growth semiconductor region is lower than a top surface of the STI region.
7. The integrated circuit structure of claim 1 , wherein the second portion of the STI region forms a conformal layer, with horizontal portions and vertical portions of the second portion having substantially a same thickness.
8. The integrated circuit structure of claim 1 further comprising:
a gate dielectric on a top surface and sidewalls of the semiconductor fin; and
a gate electrode over the gate dielectric.
9. An integrated circuit structure comprising:
a semiconductor substrate comprising a semiconductor strip; and
Shallow Trench Isolation (STI) regions on opposite sides of the semiconductor strip, wherein each of the STI regions comprises:
an oxide region; and
a silicon nitride region over and in contact with the oxide region; and
a semiconductor fin over and aligned to the semiconductor strip, wherein the semiconductor fin is higher than a top surface of the silicon nitride region.
10. The integrated circuit structure of claim 9 , wherein each of the STI regions further comprises a silicon nitride liner comprising:
a sidewall portion between and in contact with a first sidewall of the semiconductor strip and a sidewall of the oxide region; and
a bottom portion underlying and in contact with the oxide region.
11. The integrated circuit structure of claim 10 , wherein a side edge of the silicon nitride region is in contact with a sidewall of the silicon nitride liner.
12. The integrated circuit structure of claim 10 , wherein a top surface of the silicon nitride region is substantially level with a top edge of the silicon nitride liner.
13. The integrated circuit structure of claim 10 , wherein the silicon nitride liner forms a basin, with the oxide region in the basin, and wherein the silicon nitride region and the silicon nitride liner fully enclose the oxide region.
14. The integrated circuit structure of claim 9 further comprising:
a gate dielectric on a top surface and sidewalls of the semiconductor fin, wherein the gate dielectric is in contact with a top surface of the silicon nitride region; and
a gate electrode over the gate dielectric, wherein the gate dielectric, the gate electrode, and the semiconductor fin are comprised in a Fin Field-Effect Transistor (FinFET).
15.-20. (canceled)
21. An integrated circuit structure comprising:
a semiconductor substrate;
a Shallow Trench Isolation (STI) region extending into the semiconductor substrate, wherein the STI region comprises:
a first dielectric material; and
second dielectric materials fully enclosing the first dielectric material therein, wherein the second dielectric materials are different from the first dielectric material.
22. The integrated circuit structure of claim 21 further comprising:
a portion of the semiconductor substrate contacting an edge of the STI region; and
a semiconductor fin with an edge aligned to a sidewall of the STI region, wherein the semiconductor fin is higher than a top surface of the portion of the semiconductor substrate.
23. The integrated circuit structure of claim 21 , wherein all of the second dielectric materials are formed of a same dielectric material.
24. The integrated circuit structure of claim 21 , wherein the first dielectric material comprises silicon oxide, and the second dielectric materials comprise silicon nitride.
25. The integrated circuit structure of claim 21 , wherein the second dielectric materials comprise a first portion overlapping the first dielectric material, and a second portion comprising:
sidewall portions encircling and in contact with edges of the first dielectric material and the first portion of the second dielectric materials; and
a bottom portion overlapped by the first dielectric material.
26. The integrated circuit structure of claim 25 , wherein the sidewall portions and the bottom portion of the second dielectric materials are connected continuously with no distinguishable interface therebetween, and the first portion and the sidewall portions have distinguishable interfaces.
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Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9142474B2 (en) | 2013-10-07 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation structure of fin field effect transistor |
US9178067B1 (en) * | 2014-04-25 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET device |
US9287262B2 (en) * | 2013-10-10 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted for fin field effect transistor |
US9299775B2 (en) * | 2014-04-16 | 2016-03-29 | GlobalFoundries, Inc. | Methods for the production of integrated circuits comprising epitaxially grown replacement structures |
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US20160379867A1 (en) * | 2014-12-31 | 2016-12-29 | International Business Machines Corporation | Silicon germanium-on-insulator finfet |
WO2016209219A1 (en) | 2015-06-24 | 2016-12-29 | Intel Corporation | Sub-fin sidewall passivation in replacement channel finfets |
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US20170053944A1 (en) * | 2014-10-21 | 2017-02-23 | United Microelectronics Corp. | Fin-shaped structure |
US20170207217A1 (en) * | 2015-12-16 | 2017-07-20 | Imec Vzw | Finfet having locally higher fin-to-fin pitch |
US9735156B1 (en) | 2016-01-26 | 2017-08-15 | Samsung Electronics Co., Ltd. | Semiconductor device and a fabricating method thereof |
US20180102437A1 (en) * | 2016-10-10 | 2018-04-12 | Semiconductor Manufacturing International (Shanghai) Corporation | Fin-fet devices and fabrication methods thereof |
US20190067078A1 (en) * | 2017-08-28 | 2019-02-28 | International Business Machines Corporation | Protection of low temperature isolation fill |
CN109427674A (en) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | The forming method of fin field effect transistor device structure |
US10249730B1 (en) | 2017-12-11 | 2019-04-02 | International Business Machines Corporation | Controlling gate profile by inter-layer dielectric (ILD) nanolaminates |
US20190131445A1 (en) * | 2017-10-30 | 2019-05-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Fin profile for bulk based silicon-on-insulation finfet device |
US10424482B2 (en) | 2017-12-19 | 2019-09-24 | International Business Machines Corporation | Methods and structures for forming a tight pitch structure |
US10515952B2 (en) | 2017-08-04 | 2019-12-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure and method for forming the same |
US20200126803A1 (en) * | 2016-01-27 | 2020-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for Reducing Scratch Defects in Chemical Mechanical Planarization |
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US10978568B2 (en) | 2015-09-25 | 2021-04-13 | Intel Corporation | Passivation of transistor channel region interfaces |
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US11522074B2 (en) * | 2017-11-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
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---|---|---|---|---|
KR102519551B1 (en) | 2017-08-03 | 2023-04-10 | 삼성전자주식회사 | Semiconductor device |
DE112017007829T5 (en) * | 2017-09-26 | 2020-04-16 | Intel Corporation | SOURCE / DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS |
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US20230016468A1 (en) * | 2021-07-15 | 2023-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacturing thereof |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652176A (en) * | 1995-02-24 | 1997-07-29 | Motorola, Inc. | Method for providing trench isolation and borderless contact |
US5763315A (en) * | 1997-01-28 | 1998-06-09 | International Business Machines Corporation | Shallow trench isolation with oxide-nitride/oxynitride liner |
US6261973B1 (en) * | 1997-12-31 | 2001-07-17 | Texas Instruments Incorporated | Remote plasma nitridation to allow selectively etching of oxide |
US20060043521A1 (en) * | 2004-08-24 | 2006-03-02 | Trivedi Jigish D | Liner for shallow trench isolation |
US20080188057A1 (en) * | 2004-12-14 | 2008-08-07 | Samsung Electronics Co., Ltd. | Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same |
US7517764B2 (en) * | 2006-06-29 | 2009-04-14 | International Business Machines Corporation | Bulk FinFET device |
US20110073952A1 (en) * | 2009-09-29 | 2011-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling the Shape of Source/Drain Regions in FinFETs |
US20110193178A1 (en) * | 2010-02-09 | 2011-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bottom-Notched SiGe FinFET Formation Using Condensation |
US20140151766A1 (en) * | 2012-12-05 | 2014-06-05 | Imec | FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTURING THEREOF |
-
2013
- 2013-06-21 US US13/924,352 patent/US20140374838A1/en not_active Abandoned
-
2016
- 2016-07-19 US US15/213,524 patent/US9870956B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652176A (en) * | 1995-02-24 | 1997-07-29 | Motorola, Inc. | Method for providing trench isolation and borderless contact |
US5763315A (en) * | 1997-01-28 | 1998-06-09 | International Business Machines Corporation | Shallow trench isolation with oxide-nitride/oxynitride liner |
US6261973B1 (en) * | 1997-12-31 | 2001-07-17 | Texas Instruments Incorporated | Remote plasma nitridation to allow selectively etching of oxide |
US20060043521A1 (en) * | 2004-08-24 | 2006-03-02 | Trivedi Jigish D | Liner for shallow trench isolation |
US20080188057A1 (en) * | 2004-12-14 | 2008-08-07 | Samsung Electronics Co., Ltd. | Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the same |
US7517764B2 (en) * | 2006-06-29 | 2009-04-14 | International Business Machines Corporation | Bulk FinFET device |
US20110073952A1 (en) * | 2009-09-29 | 2011-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling the Shape of Source/Drain Regions in FinFETs |
US20110193178A1 (en) * | 2010-02-09 | 2011-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bottom-Notched SiGe FinFET Formation Using Condensation |
US20140151766A1 (en) * | 2012-12-05 | 2014-06-05 | Imec | FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTURING THEREOF |
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US9142474B2 (en) | 2013-10-07 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation structure of fin field effect transistor |
US9287262B2 (en) * | 2013-10-10 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted for fin field effect transistor |
US11158743B2 (en) | 2013-10-10 | 2021-10-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted for fin field effect transistor |
US20170278971A1 (en) * | 2013-10-10 | 2017-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and Faceted for Fin Field Effect Transistor |
US11855219B2 (en) | 2013-10-10 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd | Passivated and faceted for fin field effect transistor |
US10381482B2 (en) * | 2013-10-10 | 2019-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted for fin field effect transistor |
US9680021B2 (en) | 2013-10-10 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivated and faceted fin field effect transistor |
US9299775B2 (en) * | 2014-04-16 | 2016-03-29 | GlobalFoundries, Inc. | Methods for the production of integrated circuits comprising epitaxially grown replacement structures |
US20170301588A1 (en) * | 2014-04-25 | 2017-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and Method for FinFET Device |
US9178067B1 (en) * | 2014-04-25 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET device |
US10325816B2 (en) * | 2014-04-25 | 2019-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET device |
US10103175B2 (en) * | 2014-10-21 | 2018-10-16 | United Microelectronics Corp. | Fin-shaped structure |
US20170053944A1 (en) * | 2014-10-21 | 2017-02-23 | United Microelectronics Corp. | Fin-shaped structure |
US9899253B2 (en) * | 2014-12-31 | 2018-02-20 | International Business Machines Corporation | Fabrication of silicon germanium-on-insulator finFET |
US20160379867A1 (en) * | 2014-12-31 | 2016-12-29 | International Business Machines Corporation | Silicon germanium-on-insulator finfet |
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US9847247B2 (en) * | 2015-06-15 | 2017-12-19 | United Microelectronics Corp. | Method for filling gaps of semiconductor device and semiconductor device formed by the same |
US9685319B2 (en) * | 2015-06-15 | 2017-06-20 | United Microelectronics Corp. | Method for filling gaps of semiconductor device and semiconductor device formed by the same |
US20180151677A1 (en) * | 2015-06-24 | 2018-05-31 | Intel Corporation | Sub-fin sidewall passivation in replacement channel finfets |
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