US20150001068A1 - Manufacturing apparatus - Google Patents
Manufacturing apparatus Download PDFInfo
- Publication number
- US20150001068A1 US20150001068A1 US14/488,907 US201414488907A US2015001068A1 US 20150001068 A1 US20150001068 A1 US 20150001068A1 US 201414488907 A US201414488907 A US 201414488907A US 2015001068 A1 US2015001068 A1 US 2015001068A1
- Authority
- US
- United States
- Prior art keywords
- sputtering
- film
- chamber
- sputtering deposition
- deposition chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000004544 sputter deposition Methods 0.000 claims abstract description 308
- 238000000151 deposition Methods 0.000 claims abstract description 249
- 230000008021 deposition Effects 0.000 claims abstract description 248
- 239000010408 film Substances 0.000 claims abstract description 173
- 239000000758 substrate Substances 0.000 claims abstract description 140
- 238000000034 method Methods 0.000 claims abstract description 117
- 230000008569 process Effects 0.000 claims abstract description 114
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 230000005415 magnetization Effects 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 126
- 235000012431 wafers Nutrition 0.000 description 56
- 229910019236 CoFeB Inorganic materials 0.000 description 33
- 238000005530 etching Methods 0.000 description 24
- 229910019041 PtMn Inorganic materials 0.000 description 18
- 229910003321 CoFe Inorganic materials 0.000 description 15
- 238000010586 diagram Methods 0.000 description 15
- 238000001755 magnetron sputter deposition Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000005477 sputtering target Methods 0.000 description 11
- 230000005291 magnetic effect Effects 0.000 description 10
- 239000003302 ferromagnetic material Substances 0.000 description 8
- 229910020598 Co Fe Inorganic materials 0.000 description 7
- 229910002519 Co-Fe Inorganic materials 0.000 description 7
- 229910003271 Ni-Fe Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 238000012864 cross contamination Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 229910018516 Al—O Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 239000002885 antiferromagnetic material Substances 0.000 description 3
- 229910019589 Cr—Fe Inorganic materials 0.000 description 2
- 229910002480 Cu-O Inorganic materials 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 230000005303 antiferromagnetism Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/505—Substrate holders for rotation of the substrates
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Definitions
- the present invention relates to a manufacturing apparatus, and particularly relates to a manufacturing apparatus of a multi-layered thin film which is preferable for a manufacturing process of a device applying a multi-layered thin film, such as a magnetic reproducing head of a magnetic disk drive apparatus, a storage element of a magnetic random access memory, a magneto-resistance element used for a magnetic sensor, a storage element of a semiconductor memory or the like.
- a conventional film-forming apparatus of a multi-layered thin film has a configuration in which one sputtering deposition chamber includes sputtering cathodes in a number equal to or more than the number of film types in a multi-layered thin film (refer to Patent Literature 1), or a configuration of a so-called cluster system including plural sputtering deposition chambers each including plural sputtering cathodes (refer to Patent Literature 2).
- a cluster system in another configuration, includes sputtering deposition chambers each including one sputtering cathode, at least in a number equal to the number of film types in a multi-layered thin film (refer to Patent Literature 3).
- a sputtering apparatus for depositing a multi-layered film including a magneto-resistance element over a substrate, using a sputtering apparatus including a first vacuum chamber 110 having one target 116 a installed therein, a second vacuum chamber 112 having four targets 116 b , 116 c , 116 d and 116 e installed therein, and a transfer chamber 114 coupling these two vacuum chambers 110 and 112 , as shown in FIG. 8 (refer to Patent Literature 4).
- the sputtering system 600 of FIG. 9 includes a first single-target DC magnetron sputtering module 604 , a multi-target DC sputtering module 606 , a multi-target ion-beam sputtering module 608 , and a second single-target DC magnetron sputtering module 610 .
- a load lock 616 enables ingress and egress of a wafer.
- a control panel 614 controls a parameter and process of the sputtering system 600 .
- the spin valve sensor 300 described in FIG. 10 includes a substrate 302 , a bottom shield layer 311 (Ni—Fe film), a bottom gap layer 304 (Al 2 O 3 film), multiple seed layers 306 (first seed layer: Al 2 O 3 film, second seed layer: Ni—Cr—Fe film, and third seed layer: Ni—Fe film), an anti-ferromagnetic pinning layer 308 (Pt—Mn film), a Co—Fe film 310 , a Ru film 312 , a Co—Fe film 314 , a spacer layer 316 (Cu (Cu—O) film), a Co—Fe film 318 , a Ni—Fe film 320 , a cap layer 322 (Al (Al—O) film), an upper gap layer 324 (Al 2 O 3 film), and an upper
- FIG. 10 shows that a ferromagnetism sensing layer 307 (called “free layer”) is separated from a ferromagnetic pinned layer 309 by the spacer layer 316 .
- magnetization of the pinned layer 309 is confined by exchange coupling with an anti-ferromagnetic film called a pinning layer, and magnetization of another ferromagnetic film called a “sensing” layer or a “free” layer 307 is not fixed and rotates freely in response to a magnetic field (signal magnetic field) from a recorded magnetic medium.
- the bottom gap layer 304 is formed over a wafer in the first single-target DC magnetron sputtering module 604 .
- the wafer is transferred into the second single-target DC magnetron sputtering module 610 , and the first seed layer Al 2 O 3 film is stacked.
- the wafer is transferred into the multi-target ion-beam sputtering module 608 and the Ni—Cr—Fe film and the Ni—Fe film are stacked respectively. After that, the wafer is transferred into the multi-target DC magnetron sputtering module 606 for stacking the remaining layers of the spin valve sensor.
- the remaining layers include the Pt—Mn film 308 , the Co—Fe film 310 , the Ru film 312 , the Co—Fe film 314 , the Cu (Cu—O) film 316 , the Co—Fe film 318 , the Ni—Fe film 320 , and the Al (Al—O) film 322 .
- the wafer is annealed and a Ta film is stacked.
- a time for sputter-forming a film having a thickness thicker in a different order of magnitude or for an oxide film having a sputtering rate lower in a different order of magnitude in the multi-layered thin film becomes longer than a time for forming another thin film, and this has been a cause of limiting throughput of a manufacturing apparatus.
- a film including a single element there has been a problem also in a footprint because only one of plural sputtering cathodes functions.
- the cluster-type manufacturing apparatus including the sputtering deposition chambers each including one sputtering cathode, at least in a number equal to the number of film types in a multi-layered thin film (Patent Literature 3), the interlayer cross contamination can be avoided.
- the number of sputtering deposition chambers needs to be increased, the size of a manufacturing apparatus is increased, and therefore there has been a problem of cost increase, footprint increase, and energy consumption increase. Further, in the manufacturing apparatus described in Patent Literature 3, there has been a problem that a film containing plural elements cannot be formed.
- a substrate is transferred twice to the same process chamber in a series of film deposition processes because a sputtering target is not provided for each layer. That is, when a magneto-resistance effect film including Ta/NiFe/CoFeB/Cu/CoFeB/PdPtMn/Ta is formed by the use of the sputtering apparatus which is described in Patent Literature 4 and shown in FIG. 8 , a substrate is transferred twice to the first vacuum chamber 110 as follows.
- a Ta film is formed on a substrate surface by sputtering using Ta as a target in the first vacuum chamber 110 , the substrate is transferred into the second vacuum chamber 112 , and then a NiFe film, a CoFeB film, a Cu film, a PdPtMn film are formed by sputtering using NiFe, CoFeB, Cu, PdPtMn as targets. After that, the substrate needs to be transferred into the first vacuum chamber 110 again for the purpose of forming a Ta film on the substrate surface by sputtering using Ta as a target in the first vacuum chamber 110 .
- a wafer is transferred into the first single-target DC magnetron sputtering module 604 , the second single-target DC magnetron sputtering module 610 , the multi-target ion-beam sputtering module 608 , and the multi-target DC sputtering module 606 , in this order, and the spin valve sensor 300 described in FIG. 11 is fabricated. Accordingly, the sputtering system 600 of Patent Literature 5 realizes so-called sequential substrate transfer, compared to the sputtering apparatus described in Patent Literature 4.
- film depositions from the anti-ferromagnetism pinning layer 308 (Pt—Mn film) to the cap layer 322 (Al (Al—O) film) in the spin valve sensor 300 are performed in the multi-target DC sputtering module 606 .
- the film thickness (10 to 20 nm) of the anti-ferromagnetic pinning layer 308 is one order larger than, the film thicknesses of other layers, for example, the Co—Fe film 318 (1 to 5 nm). Accordingly, a film deposition time (also called “takt time”) in the multi-target DC sputtering module 606 is considerably long compared to film deposition times in the first single-target DC magnetron sputtering module 604 , the second single-target DC magnetron sputtering module 610 , and the multi-target ion-beam sputtering module 608 .
- Throughput is determined by a substrate work quantity which can be processed in a unit time (takt time). Accordingly, even when the takt time is short in each of the first single-target DC magnetron sputtering module 604 , the second single-target DC magnetron sputtering module 610 , and the multi-target ion-beam sputtering module 608 , the throughput is determined by the takt time of the multi-target DC sputtering module 606 if the takt time of the multi-target DC sputtering module 606 is longer. As a result, the sputtering system 600 of Patent Literature 5 still has a problem in the throughput.
- the present invention aims at providing a manufacturing apparatus which can realize so-called sequential substrate transfer and improve throughput even when one multi-layered thin film includes plural layers of the same film type.
- one aspect of the present invention is a manufacturing apparatus that grows a multi-layered film over a substrate, and includes: a transfer chamber including a substrate transfer mechanism; a first sputtering deposition chamber including one sputtering cathode; a second sputtering deposition chamber including one sputtering cathode; a third sputtering deposition chamber including one sputtering cathode; a fourth sputtering deposition chamber including two or more sputtering cathodes; a fifth sputtering deposition chamber including two or more sputtering cathodes; and a process chamber for performing a process other than sputtering, wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is
- the first sputtering deposition chamber including one sputtering cathode
- the second sputtering deposition chamber including one sputtering cathode
- the third sputtering deposition chamber including one sputtering cathode
- the fourth sputtering deposition chamber including two or more sputtering cathodes
- the fifth sputtering deposition chamber including two or more sputtering cathodes
- the process chamber for performing a process other than sputtering are arranged around the transfer chamber. Accordingly, even when one multi-layered thin film includes plural layers of the same film type, it is possible to realize so-called sequential substrate transfer and to improve throughput.
- FIG. 1 is a configuration diagram showing a first example of a multi-layered thin film manufacturing apparatus according to an embodiment of the present invention.
- FIG. 2 is a configuration diagram showing an example of a sputtering deposition chamber including plural sputtering cathodes according to an embodiment of the present invention.
- FIG. 3 is a configuration diagram showing an example of a sputtering deposition chamber including one sputtering cathode according to an embodiment of the present invention.
- FIG. 4 is a configuration diagram showing an example of a sputtering deposition chamber which mounts a sputtering cathode so as to make a sputtering target surface substantially parallel to a substrate surface according to an embodiment of the present invention.
- FIG. 5 is a film composition diagram of a tunnel magneto-resistance element which is fabricated by the use of a manufacturing apparatus according to an embodiment of the present invention.
- FIG. 6 is a configuration diagram showing a second example of a multi-layered thin film manufacturing apparatus according to an embodiment of the present invention.
- FIG. 7 is a configuration diagram showing an internal structure of a process chamber which can be applied to an embodiment of the present invention.
- FIG. 8 is a configuration diagram showing an example of a conventional multi-layered thin film manufacturing apparatus (Patent Literature 4).
- FIG. 9 is a configuration diagram showing an example of a conventional multi-layered thin film manufacturing apparatus (Patent Literature 5).
- FIG. 10 is a configuration diagram showing an example of a spin valve sensor which is fabricated by a conventional multi-layered thin film manufacturing apparatus (Patent Literature 5).
- FIG. 1 is a configuration diagram showing a first example of a multi-layered thin film manufacturing apparatus according to an embodiment of the present invention.
- the manufacturing apparatus of FIG. 1 is suitable to improve throughput while maintaining a low cost, and further to suppress device characteristic degradation by preventing or reducing interlayer cross contamination, in forming a multi-layered thin film.
- a feature of the manufacturing apparatus of the present invention is that a process chamber for performing a process other than sputtering (etching chamber 14 ), a first sputtering deposition chamber including one sputtering cathode (sputtering deposition chamber 13 A), a second sputtering deposition chamber including one sputtering cathode (sputtering deposition chamber 13 C), a third sputtering deposition chamber including one sputtering cathode (sputtering deposition chamber 13 E), a fourth sputtering deposition chamber including two or more sputtering cathodes (sputtering deposition chamber 13 B), and a fifth sputtering deposition chamber including two or more sputtering cathodes (sputtering deposition chamber 13 D) are arranged around a transfer chamber including a substrate transfer mechanism.
- the three sputtering deposition chambers each including one sputtering cathode, the two sputtering deposition chambers each including two or more sputtering cathodes, and the process chamber for performing a process other than sputtering are provided around the transfer chamber including the substrate transfer mechanism.
- the five sputtering deposition chambers 13 A to 13 E, the etching chamber 14 for removing oxide and contamination on a substrate 25 surface by reverse sputtering etching, and two load lock chambers 15 A and 15 B are connected to the transfer chamber 12 which includes two substrate transfer robots 11 A and 11 B as the substrate transfer mechanism 11 .
- the transfer chamber 12 which includes two substrate transfer robots 11 A and 11 B as the substrate transfer mechanism 11 .
- each of 13 A, 13 C and 13 E includes one sputtering cathode 31
- each of 13 B and 13 D includes five sputtering cathodes 31 .
- one substrate transfer robot may be used as the substrate transfer mechanism 11 described in FIG. 1 .
- Each of all the above chambers and the load lock chambers 15 A and 15 B preferably has a vacuum pump for exhausting the chamber into vacuum, and the chambers other than the load lock chambers 15 A and 15 B are always maintained in vacuum.
- all the chambers and the load lock chambers are assumed to have vacuum pumps.
- the load lock chambers 15 A and 15 B are maintained to have the same pressure as an atmospheric pressure when the substrate 25 is brought in from atmospheric air before process and when the substrate 25 is taken out to atmospheric air after the process.
- the load lock chambers 15 A and 15 B are exhausted into vacuum when the substrates 25 disposed in the load lock chambers 15 A and 15 B are transferred into the transfer chamber 12 which is exhausted into vacuum and when the substrate 25 is retrieved from the transfer chamber 12 after the process.
- the number of load lock chambers 15 A and 15 B may not necessarily be two and may be one.
- Gate valves 16 are provided between each of the sputtering deposition chamber 13 A, the sputtering deposition chamber 13 B, the sputtering deposition chamber 13 C, the sputtering deposition chamber 13 D, the sputtering deposition chamber 13 E, and the process chamber 14 , and each of the load lock chambers 15 a and 15 B. Each of the gate valves 16 is closed except when the substrate 25 is transferred.
- the substrate transfer robot 11 is configured to take out the substrate 25 from the load lock chamber 15 A or 15 B and transfer the substrate 25 into a desired chamber by an instruction from computer program.
- the plural sputtering cathodes 31 are disposed in each upper part of the sputtering deposition chambers 13 B and 13 D as shown in FIG. 2 .
- a substrate stage 33 is provided which is rotatable by a power source (not shown in the drawing) provided outside the sputtering deposition chambers 13 B and 13 D.
- the substrate 25 for thin film deposition is placed over the substrate stage 33 at least during film deposition.
- Each of the sputtering cathodes 31 includes a sputtering target 32 which is made of a material corresponding to the film type of each layer forming a multi-layered thin film, and disposed at an angle so that the surface of the sputtering target 32 faces substantially in the center direction of the substrate stage 33 in FIG. 2 .
- the sputtering cathode 31 is not necessarily disposed at an angle and may be disposed so that the surface of the sputtering target 32 is substantially in parallel to the substrate 25 surface.
- DC or RF power is applied to a desired sputtering cathode 31 preferably while the substrate stage 33 is being rotated, and the power is shut down when a desired film thickness is reached.
- a shutter may be disposed between the substrate 25 and the sputtering target 32 , and the film thickness may be controlled by open and close of the shutter while the power is being applied.
- the above film forming operation may be performed sequentially while the substrate is placed on the rotating substrate stage 33 .
- four kinds of target 31 are disposed in the sputtering deposition chamber 13 B and the materials thereof are PtMn, CoFe, Ru, and CoFeB.
- the gate valve 16 is provided on the side wall of the sputtering deposition chamber 13 B via an O ring 34 . Further, four kinds of target 31 are disposed in the sputtering deposition chamber 13 D and the materials thereof are PtMn, CoFe, Ru, and CoFeB. Further, the gate valve 16 is provided on the side wall of the vacuum chamber 13 A via an O ring 34 .
- one sputtering cathode may be only disposed in the sputtering deposition chamber including plural sputtering cathodes and the same film forming operation may be performed.
- the sputtering cathode is placed to have a size larger than that of the sputtering cathode placed on the sputtering deposition chamber including the plural sputtering cathodes in order to obtain a higher film deposition rate.
- FIG. 1 As shown in FIG.
- the sputtering cathode may be placed so that the surface of the sputtering target is substantially in parallel to the substrate surface.
- the substrate stage needs not be rotated in particular.
- one kind of target 32 is disposed in the sputtering deposition chamber 13 A and the material thereof is a material capable of forming an oxide film, a nitride film, or a semiconductor film.
- one kind of target 32 is disposed in the sputtering deposition chamber 13 C and the material thereof is a material capable of forming a metal film having a thickness not smaller than 10 nm.
- one kind of target 32 is disposed in the sputtering deposition chamber 13 E and the material thereof is a material capable of forming a metal film having a thickness not smaller than 10 nm.
- a target formed by a material capable of forming a metal film having a thickness not smaller than 10 nm may be disposed in the sputtering deposition chamber 13 A and a target formed by a material capable of forming an oxide film, a nitride film, or a semiconductor film may be disposed in either the sputtering deposition chamber 13 C or the sputtering deposition chamber 13 E.
- a film having a thickness larger than those of the other films may be formed.
- the process chamber 14 which performs a process other than sputtering deposition is connected to the transfer chamber 12 .
- a process chamber 14 there can be employed a process chamber for removing a thin film formed on or over the substrate, with plasma, an ion beam, an atom beam, a molecular beam, and a gas Cluster beam.
- a process chamber for forming a thin film on the thin film formed on or over the substrate by a chemical vapor deposition method, a process chamber for causing the thin film formed on or over the substrate to chemically react in gas, neutral active species, ions, or a mixed atmosphere thereof, or a process chamber for heating, cooling, or heating and cooling the substrate.
- the process chamber 14 includes a vacuum chamber 21 , and an upper electrode 22 and a lower electrode are provided in this vacuum chamber 21 .
- the upper electrode 22 is earthed and the lower electrode 23 is connected to an RF power source (high frequency power source) 60 via a matching box 24 .
- a substrate 25 is placed on the lower electrode 23 .
- Plasma 26 is generated between the upper electrode 22 and the lower electrode 23 when a plasma generation condition is established.
- a substrate bias voltage (Vdc) is a voltage included in a range smaller than 0 V and not smaller than ⁇ 300 V.
- the upper limit value of the substrate bias voltage is preferably ⁇ 2 to ⁇ 3 V, and the most preferable voltage is a voltage included in a range from ⁇ 15 V to the upper limit value of the substrate bias voltage. This voltage is a voltage capable of generating plasma.
- Process gas pressure in the process chamber 14 is set to be a low pressure in a range of 0.01 to 100 Pa.
- FIG. 5 is a film composition diagram of a tunnel magneto-resistance element (magneto-resistance multi-layered film) fabricated by the use of a manufacturing apparatus according to an embodiment of the present invention.
- a stacked body including a Ta layer 41 , a PtMn layer 42 , a CoFe layer 43 , a Ru layer 44 , a CoFeB layer 45 , an MgO layer 46 , a CoFeB layer 47 , a Ta layer 48 , a Ru layer 49 , and a Ta layer 50 .
- the Ta layer 41 is formed having a film thickness of 20 nm as a foundation layer, successively the PtMn layer 42 of anti-ferromagnetic material is formed having a film thickness of 15 nm, successively the CoFe layer 43 of ferromagnetic material is formed having a film thickness of 2.5 nm, the Ru layer 44 of non-magnetic material is formed having a film thickness of 0.9 nm, the CoFeB layer 45 of ferromagnetic material is formed having a film thickness of 3 nm, and the MgO layer 46 of oxide is formed having a film thickness of 1.2 nm.
- the CoFeB layer 47 of ferromagnetic material is formed again having a film thickness of 3 nm, the Ta layer 48 is formed thereover having a very small film thickness of 1.5 nm, and then the Ru layer 49 and the Ta layer 50 are formed having film thickness of 10 nm and a film thickness of 50 nm, respectively.
- the bottom Ta film and the top Ta film 50 have outstandingly large thicknesses and secondarily the PtMn layer 42 and the upper Ru layer 49 have large thicknesses.
- thin layers are stacked having film thicknesses not larger than 3 nm per one layer. Further, only the MgO layer 46 is oxide. In FIG.
- the Ta layer 41 functions as a foundation layer
- the PtMn layer 42 functions as an anti-ferromagnetic layer
- a stacked layer of the ferromagnetic CoFe layer 43 , the non-magnetic Ru layer 44 , and the ferromagnetic CoFeB layer 45 functions as a magnetization fixing layer
- the MgO layer 46 functions as a non-magnetic insulating layer
- the CoFeB layer 47 functions as a magnetization free layer
- a stacked layer of the Ta layer 48 , the Ru layer 49 , and the Ta layer 50 functions as a protection layer.
- FIG. 1 shows a manufacturing apparatus suitable to improve throughput while maintaining a low cost and further to suppress device characteristic degradation by preventing or reducing the interlayer cross contamination, in the deposition of such a multi-layered thin film.
- the three sputtering deposition chambers each including one sputtering cathode, the two sputtering deposition chambers each including two or more sputtering cathodes and the one process chamber for performing a process other than sputtering are provided around the transfer chamber including the substrate transfer mechanism.
- at least three sputtering deposition chambers each including one sputtering cathode and at least two sputtering deposition chambers each including two or more sputtering cathodes are necessary from the viewpoint of throughput improvement.
- a Ta target 32 is attached to each of the sputtering deposition chambers 13 A and 13 E and used for forming the bottom Ta film 41 and the top Ta film 47 each shown in FIG. 5 .
- Four sputtering targets 32 of PtMn, CoFe, Ru and CoFeB are attached to the sputtering deposition chamber 13 B and the remaining one sputtering cathode 31 is left vacant for backup.
- An MgO sintered target 32 is attached to the sputtering deposition chamber 13 C.
- Three targets 32 of CoFeB, Ta and Ru are attached to the sputtering deposition chamber 13 D, and the remaining two sputtering cathodes 31 are left vacant for backup.
- the reason why the sputtering target 32 is disposed for each layer although one multi-layered thin film includes plural layers of the same film type is to realize so-called sequential substrate transfer in which the substrate 25 is not transferred twice to the same process chamber in a series of the film deposition processes. That is, when plural layers of the same type are formed in different thicknesses, thinner one is formed by at least one of the three sputtering deposition chambers each including one sputtering cathode and thicker one is formed by another deposition chamber of the three sputtering deposition chambers. Accordingly, layers which are the same type but have different thicknesses can be formed without the substrate being transferred twice to the same sputtering deposition chamber.
- the gate valves 16 are provided between each of the sputtering deposition chamber 13 A to the sputtering deposition chamber 13 E, and the etching chamber 14 , and each of the load lock chambers 15 A and 15 B.
- reference numeral 35 indicates a placement stage for placing the substrate 25 temporarily when the two substrate transfer robots 11 A and 11 B receive and deliver the substrate 25 , and a position alignment mechanism of the substrate 25 and a notch alignment mechanism of the substrate 25 may be provided separately.
- Table 1 shows a process time table in the apparatus configuration of FIG. 1 .
- the substrate 25 is transferred into the sputtering deposition chamber 13 A by the substrate transfer robot 11 B and a Ta layer having a film thickness of 20 nm is deposited over the substrate 25 as a foundation layer (process 4 of Table 1).
- the substrate 25 on which the Ta layer is deposited is transferred into the sputtering deposition chamber 13 B by the substrate transfer robot 11 B (process 5 of Table 1), and, over the substrate 25 , a PtMn layer 42 of anti-ferromagnetic material is deposited in 15 nm, and successively a CoFe layer 43 of ferromagnetic material is deposited in 2.5 nm, a Ru layer 44 of non-magnetic material is deposited in 0.9 nm, and a CoFeB layer 45 of ferromagnetic material is deposited in 3 nm (process 6 of Table 1).
- the substrate 25 is transferred into the sputtering deposition chamber 13 C by the substrate transfer robot 11 B (process 7 of Table 1) and an MgO layer 46 of oxide is deposited in 1.2 nm (process 8 of Table 1).
- the substrate 25 is transferred into the sputtering deposition chamber 13 D by the substrate transfer robot 11 B (process 9 of Table 1), a CoFeB layer 47 is deposited again over the substrate 25 in 3 nm and a Ta layer 48 is deposited thereover in a very small thickness of 1.5 nm, and then a Ru layer 49 of 10 nm and the Ta layer 50 of 50 nm are deposited (process 10 of Table 1).
- the substrate 25 is transferred into the sputtering deposition chamber 13 E by the substrate transfer robot 11 B (process 11 of Table 1), a Ta layer 50 of 50 nm is deposited (process 12 of Table 1).
- the substrate 25 is transferred into the load lock chamber 15 B by the substrate transfer robot 11 A (process 13 of Table 1).
- the process chamber requiring the longest takt time is the sputtering deposition chamber 13 B and the takt time is 180 seconds.
- Throughput is limited by this takt time and a derived throughput is 20 wafers/hour.
- takt time means a time after a substrate has been transferred into some chamber until the substrate is transferred out of the some chamber after processing.
- throughput means substrate work volume which can be processed within a unit time.
- each of the sputtering deposition chamber 13 B and the sputtering deposition chamber 13 D has the sputtering cathode 31 for backup, and, therefore, targets of PtMn and Ru can be attached to the cathodes 31 of the chambers 13 B and 13 D, respectively, and a co-sputtering method of discharging the two sputtering cathodes 31 at the same time can be utilized.
- a film deposition rate is increased twice and it is possible to reduce deposition time to one half for PtMn in process 6 of Table 1 and for Ru in process 10 of Table 1.
- the process time table in this case is specified by process 6 and process 10 of above Table 2, and the takt time for the sputtering deposition chamber 13 B is reduced from 180 seconds to 140 seconds and the takt time for the sputtering deposition chamber 13 D is reduced from 145 seconds to 110 seconds, although the sputtering deposition chamber 13 B still limits the takt times. Accordingly, the throughput is improved to 25.7 wafers/hour.
- Table 3 shows a time table when the tunnel magneto-resistance element described in FIG. 5 is formed by the use of the sputtering apparatus described in Patent Literature 1.
- the takt time for the sputtering deposition chamber C is 295 seconds and the throughput is 12.2. Note that, also when the position of the process chamber is switched in the apparatus configuration diagram 1 , the throughputs shown in Table 1 and Table 2 are maintained only if the sputtering targets are disposed so as to realize the sequential substrate 25 transfer.
- the same effect can be obtained also when the sputtering deposition chamber for MgO film deposition in the first embodiment is replaced by a deposition chamber using a chemical vapor deposition method.
- FIG. 6 is a diagram showing a manufacturing apparatus according to another embodiment of the present invention which is applied for fabricating the tunnel magneto-resistance element shown in FIG. 5 .
- a transfer chamber 12 including three substrate transfer robots 11 A, 11 B and 11 C as a substrate transfer mechanism, there are connected seven sputtering deposition chambers of reference numerals 13 A to 13 G, an etching chamber 14 for removing oxide and contamination on a substrate 25 surface by reverse sputtering etching, and two load lock chambers 15 A and 15 B.
- the sputtering deposition chamber 13 C includes five sputtering cathodes and the sputtering deposition chamber 13 E includes two sputtering cathodes.
- each of the sputtering deposition chambers 13 A, 13 B, 13 D, 13 F and 13 G includes one sputtering cathode.
- a first sputtering deposition chamber including two or more cathodes is used for forming the above magnetization fixing layer, the above magnetization free layer, or a partial layer (Ta layer 47 ) of the above protection layer.
- a second sputtering deposition chamber including one sputtering cathode is used for forming the above foundation layer, the above anti-ferromagnetic layer, the above non-magnetic insulating layer and a layer other than the partial layer (Ta layer 50 ) of the above protection layer.
- a process chamber is used for etching.
- the first sputtering deposition chamber may include two or more targets made of the same material for performing co-sputtering.
- a Ta target is attached to the sputtering deposition chamber 13 A
- a PtMn target is attached to the sputtering deposition chamber 13 B
- a CoFe target, a Ru target, and two CoFeM targets 31 are attached to the sputtering deposition chamber 13 C and the remaining one cathode is left vacant for backup.
- the two CoFeB targets 31 are used for the co-sputtering.
- An MgO target is attached to the sputtering deposition chamber 13 D
- a CoFeB target and a Ta target are attached to the sputtering deposition chamber 13 E
- one Ta target is attached to each of the sputtering deposition chambers 13 F and 13 G.
- a process time table in the present embodiment is shown in Table 4.
- the substrate 25 is transferred into the sputtering deposition chamber 13 A by the substrate transfer robot 11 B and a Ta layer 41 is deposited over the substrate 25 having a film thickness of 20 nm as a foundation layer (process 4 of Table 4).
- the substrate 25 is placed on a placement stage 35 B in the transfer chamber 12 by the substrate transfer robot 11 B (process 5 of Table 4).
- a PtMn layer 42 is deposited over the substrate 25 having a film thickness of 15 nm as anti-ferromagnetic material by a sputtering method (process 6 of Table 4).
- the substrate 25 is transferred into the sputtering deposition chamber 13 C by the substrate transfer robot 11 C (process 7 of Table 4), and a CoFeB layer 45 of ferromagnetic material and an MgO layer 46 of oxide are deposited over the substrate 25 in 3 nm and 1.2 nm, respectively, and a CoFeB layer 45 of ferromagnetic material is deposited having a film thickness of 3 nm by the co-sputtering method (process 8 of Table 4).
- the substrate 25 is transferred into the sputtering deposition chamber 13 D by the substrate transfer robot 11 C (process 9 of Table 4), and an MGO layer 46 of oxide is deposited over the substrate 25 in 1.2 nm by a sputtering method (process 10 of Table 4).
- the substrate 25 is transferred into the sputtering deposition chamber 13 E by the substrate transfer robot 11 C (process 11 of Table 4), and a CoFeB layer 47 of ferromagnetic material is deposited again in 3 nm and a very thin Ta layer 48 is deposited thereover in 1.5 nm (process 12 of Table 4).
- the substrate 25 is transferred into the sputtering deposition chamber 13 F by the substrate transfer robot 11 B (process 13 of Table 4), and a Ru layer 49 is deposited in 10 nm (process 14 of Table 4).
- the substrate 25 is transferred into the sputtering deposition chamber 13 G by the substrate transfer robot 11 B (process 15 of Table 4), and a Ta layer 50 is deposited in 50 nm (process 16 of Table 4).
- the substrate 25 is transferred into the load lock chamber 15 B by the transfer robot 11 A (process 17 of Table 4).
- the tunnel magneto-resistance element described in FIG. 5 is formed along the process time table of Table 5 in this manner, the takt time for each of the chambers is made further uniform and the takt time for the sputtering deposition chamber B which has the longest takt time is 100 seconds. Since the sequential substrate transfer is realized in the apparatus configuration shown in FIG. 6 , the derived throughput is improved to 36 wafers/hour. Note that, also when the position of the process chamber is switched in the apparatus configuration diagram 6 , the throughput shown in Table 4 is maintained only if the sputtering targets are disposed so as to realize the sequential substrate transfer.
- FIG. 5 is formed by the manufacturing apparatus of FIG. 1 in which a process chamber is provided for the sputtering apparatus described in Patent Literature 4.
- the takt time of the sputtering apparatus described in Patent Literature 4 (total time for the second vacuum chamber 112 in the case of Patent Literature 4) is 405 seconds and the throughput is 8.8 (wafers/hour).
- this throughput is considerably worse than that of the apparatus configuration of FIG. 1 according to an embodiment of the present invention.
- a substrate is transferred twice into the same process chamber in a series of the film deposition processes and therefore so-called sequential substrate transfer cannot be realized.
- a process time table for the sputtering apparatus described in Patent Literature 5 is shown in Table 6.
- the sputtering system 600 disclosed in Patent Literature 5 does not include a process chamber which performs a process other than sputtering, and therefore cannot perform oxidation process. Further, for realizing so-called sequential substrate transfer by the use of the sputtering system 600 disclosed in Patent Literature 5, all the film depositions of MgO to CoFeM, Ta, and Ru in above Table 6 need to be performed by the multi-target ion-beam sputtering module 608 . In this case, in addition to the MgO film deposition which requires long time because of a low sputtering rate, three metal layers are deposited in the same chamber, and therefore the takt time becomes 445.0 seconds and the throughput becomes 8.1 wafers/hour.
Abstract
The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.
Description
- This application is a continuation application of International Application No. PCT/JP2011/006757, filed Dec. 2, 2011, which claims the benefit of Japanese Patent Application No. 2010-293522, filed Dec. 28, 2010. The contents of the aforementioned applications are incorporated herein by reference in their entireties.
- The present invention relates to a manufacturing apparatus, and particularly relates to a manufacturing apparatus of a multi-layered thin film which is preferable for a manufacturing process of a device applying a multi-layered thin film, such as a magnetic reproducing head of a magnetic disk drive apparatus, a storage element of a magnetic random access memory, a magneto-resistance element used for a magnetic sensor, a storage element of a semiconductor memory or the like.
- A conventional film-forming apparatus of a multi-layered thin film has a configuration in which one sputtering deposition chamber includes sputtering cathodes in a number equal to or more than the number of film types in a multi-layered thin film (refer to Patent Literature 1), or a configuration of a so-called cluster system including plural sputtering deposition chambers each including plural sputtering cathodes (refer to Patent Literature 2).
- In another configuration, a cluster system includes sputtering deposition chambers each including one sputtering cathode, at least in a number equal to the number of film types in a multi-layered thin film (refer to Patent Literature 3).
- Further, as still another configuration, there is disclosed a sputtering apparatus for depositing a multi-layered film including a magneto-resistance element over a substrate, using a sputtering apparatus including a
first vacuum chamber 110 having onetarget 116 a installed therein, asecond vacuum chamber 112 having fourtargets transfer chamber 114 coupling these twovacuum chambers FIG. 8 (refer to Patent Literature 4). - Further, as still another configuration, there will be explained a sputtering system 600 which is disclosed in Patent Literature 5, by the use of
FIG. 9 . The sputtering system 600 ofFIG. 9 includes a first single-target DCmagnetron sputtering module 604, a multi-targetDC sputtering module 606, a multi-target ion-beam sputtering module 608, and a second single-target DCmagnetron sputtering module 610. Aload lock 616 enables ingress and egress of a wafer. Acontrol panel 614 controls a parameter and process of the sputtering system 600. - First, by the use of
FIG. 10 , there will be explained aspin valve sensor 300 which is fabricated by the use of the sputtering system 600 described inFIG. 9 . Thespin valve sensor 300 described inFIG. 10 includes asubstrate 302, a bottom shield layer 311 (Ni—Fe film), a bottom gap layer 304 (Al2O3 film), multiple seed layers 306 (first seed layer: Al2O3 film, second seed layer: Ni—Cr—Fe film, and third seed layer: Ni—Fe film), an anti-ferromagnetic pinning layer 308 (Pt—Mn film), a Co—Fe film 310, aRu film 312, a Co—Fe film 314, a spacer layer 316 (Cu (Cu—O) film), a Co—Fe film 318, a Ni—Fefilm 320, a cap layer 322 (Al (Al—O) film), an upper gap layer 324 (Al2O3 film), and an upper shield layer (Ni—Fe film) 325. Here,FIG. 10 shows that a ferromagnetism sensing layer 307 (called “free layer”) is separated from a ferromagnetic pinnedlayer 309 by thespacer layer 316. In thespin valve sensor 300 shown inFIG. 10 , magnetization of thepinned layer 309 is confined by exchange coupling with an anti-ferromagnetic film called a pinning layer, and magnetization of another ferromagnetic film called a “sensing” layer or a “free”layer 307 is not fixed and rotates freely in response to a magnetic field (signal magnetic field) from a recorded magnetic medium. - Next, by the use of the sputtering system 600 described in
FIG. 9 , there will be explained a method of fabricating thespin valve sensor 300. First, thebottom gap layer 304 is formed over a wafer in the first single-target DCmagnetron sputtering module 604. After that, for stacking themultiple seed layers 306, the wafer is transferred into the second single-target DCmagnetron sputtering module 610, and the first seed layer Al2O3 film is stacked. After that, for stacking the second seed layer Ni—Fe—Cr film and the third seed layer Ni—Fe film, the wafer is transferred into the multi-target ion-beam sputtering module 608 and the Ni—Cr—Fe film and the Ni—Fe film are stacked respectively. After that, the wafer is transferred into the multi-target DCmagnetron sputtering module 606 for stacking the remaining layers of the spin valve sensor. The remaining layers include the Pt—Mnfilm 308, the Co—Fefilm 310, the Rufilm 312, the Co—Fefilm 314, the Cu (Cu—O)film 316, the Co—Fefilm 318, the Ni—Fefilm 320, and the Al (Al—O)film 322. After stacking thereof, the wafer is annealed and a Ta film is stacked. - PTL 1: Japanese Patent Application Laid-Open No. 2002-167661
- PTL 2: Japanese Patent Application Laid-Open No. H08-239765
- PTL 3: Japanese Patent Application Laid-Open No. 2007-311461
- PTL 4: Japanese Patent Application Laid-Open No. 2000-269568
- PTL 5: Japanese Patent Application Laid-Open No. 2003-158313
- In a recent multi-layered thin film application device, in addition to increase in the number of stacked layers, there is a trend of using film thicknesses different in an order of magnitude among films forming a multi-layered thin film, and combining a metal film, an insulating film, and a semiconductor film.
- In a case of forming such a multi-layered thin film by a cluster-type manufacturing apparatus which includes plural sputtering deposition chambers each including plural sputtering cathodes (Patent Literature 1 and Patent Literature 2), a time for sputter-forming a film having a thickness thicker in a different order of magnitude or for an oxide film having a sputtering rate lower in a different order of magnitude in the multi-layered thin film becomes longer than a time for forming another thin film, and this has been a cause of limiting throughput of a manufacturing apparatus. In particular, when forming a film including a single element, there has been a problem also in a footprint because only one of plural sputtering cathodes functions.
- Further, for a case of a multi-layered thin film formed by combining a metal film, an insulating film, and a semiconductor film using the manufacturing apparatus described in Patent Literature 1 or Patent Literature 2, there has been a problem of so-called interlayer cross contamination that device characteristics are degraded considerably when the metal film is mixed into the insulating film or the semiconductor film.
- On the other side, in the cluster-type manufacturing apparatus including the sputtering deposition chambers each including one sputtering cathode, at least in a number equal to the number of film types in a multi-layered thin film (Patent Literature 3), the interlayer cross contamination can be avoided. However, since the number of sputtering deposition chambers needs to be increased, the size of a manufacturing apparatus is increased, and therefore there has been a problem of cost increase, footprint increase, and energy consumption increase. Further, in the manufacturing apparatus described in
Patent Literature 3, there has been a problem that a film containing plural elements cannot be formed. - Moreover, in the sputtering apparatus described in Patent Literature 4, when one multi-layered thin film includes plural layers of the same film type, a substrate is transferred twice to the same process chamber in a series of film deposition processes because a sputtering target is not provided for each layer. That is, when a magneto-resistance effect film including Ta/NiFe/CoFeB/Cu/CoFeB/PdPtMn/Ta is formed by the use of the sputtering apparatus which is described in Patent Literature 4 and shown in
FIG. 8 , a substrate is transferred twice to thefirst vacuum chamber 110 as follows. First, a Ta film is formed on a substrate surface by sputtering using Ta as a target in thefirst vacuum chamber 110, the substrate is transferred into thesecond vacuum chamber 112, and then a NiFe film, a CoFeB film, a Cu film, a PdPtMn film are formed by sputtering using NiFe, CoFeB, Cu, PdPtMn as targets. After that, the substrate needs to be transferred into thefirst vacuum chamber 110 again for the purpose of forming a Ta film on the substrate surface by sputtering using Ta as a target in thefirst vacuum chamber 110. In this manner, for the case of the sputtering apparatus described in Patent Literature 4, a substrate is transferred into the same process chamber twice in a series of the film deposition processes and therefore there has been a problem in throughput. Moreover, there has been a problem that so-called sequential substrate transfer cannot be realized. - Further, in the sputtering system 600 of Patent Literature 5 shown in
FIG. 9 , a wafer is transferred into the first single-target DCmagnetron sputtering module 604, the second single-target DCmagnetron sputtering module 610, the multi-target ion-beam sputtering module 608, and the multi-targetDC sputtering module 606, in this order, and thespin valve sensor 300 described inFIG. 11 is fabricated. Accordingly, the sputtering system 600 of Patent Literature 5 realizes so-called sequential substrate transfer, compared to the sputtering apparatus described in Patent Literature 4. - In the sputtering system 600 of Patent Literature 5, however, film depositions from the anti-ferromagnetism pinning layer 308 (Pt—Mn film) to the cap layer 322 (Al (Al—O) film) in the
spin valve sensor 300 are performed in the multi-targetDC sputtering module 606. - Typically, in the
spin valve sensor 300, the film thickness (10 to 20 nm) of the anti-ferromagnetic pinning layer 308 (Pt—Mn film) is one order larger than, the film thicknesses of other layers, for example, the Co—Fe film 318 (1 to 5 nm). Accordingly, a film deposition time (also called “takt time”) in the multi-targetDC sputtering module 606 is considerably long compared to film deposition times in the first single-target DCmagnetron sputtering module 604, the second single-target DCmagnetron sputtering module 610, and the multi-target ion-beam sputtering module 608. Throughput is determined by a substrate work quantity which can be processed in a unit time (takt time). Accordingly, even when the takt time is short in each of the first single-target DCmagnetron sputtering module 604, the second single-target DCmagnetron sputtering module 610, and the multi-target ion-beam sputtering module 608, the throughput is determined by the takt time of the multi-targetDC sputtering module 606 if the takt time of the multi-targetDC sputtering module 606 is longer. As a result, the sputtering system 600 of Patent Literature 5 still has a problem in the throughput. - The present invention aims at providing a manufacturing apparatus which can realize so-called sequential substrate transfer and improve throughput even when one multi-layered thin film includes plural layers of the same film type.
- For achieving such a purpose, one aspect of the present invention is a manufacturing apparatus that grows a multi-layered film over a substrate, and includes: a transfer chamber including a substrate transfer mechanism; a first sputtering deposition chamber including one sputtering cathode; a second sputtering deposition chamber including one sputtering cathode; a third sputtering deposition chamber including one sputtering cathode; a fourth sputtering deposition chamber including two or more sputtering cathodes; a fifth sputtering deposition chamber including two or more sputtering cathodes; and a process chamber for performing a process other than sputtering, wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.
- According to the present invention, the first sputtering deposition chamber including one sputtering cathode, the second sputtering deposition chamber including one sputtering cathode, the third sputtering deposition chamber including one sputtering cathode, the fourth sputtering deposition chamber including two or more sputtering cathodes, the fifth sputtering deposition chamber including two or more sputtering cathodes, and the process chamber for performing a process other than sputtering are arranged around the transfer chamber. Accordingly, even when one multi-layered thin film includes plural layers of the same film type, it is possible to realize so-called sequential substrate transfer and to improve throughput.
-
FIG. 1 is a configuration diagram showing a first example of a multi-layered thin film manufacturing apparatus according to an embodiment of the present invention. -
FIG. 2 is a configuration diagram showing an example of a sputtering deposition chamber including plural sputtering cathodes according to an embodiment of the present invention. -
FIG. 3 is a configuration diagram showing an example of a sputtering deposition chamber including one sputtering cathode according to an embodiment of the present invention. -
FIG. 4 is a configuration diagram showing an example of a sputtering deposition chamber which mounts a sputtering cathode so as to make a sputtering target surface substantially parallel to a substrate surface according to an embodiment of the present invention. -
FIG. 5 is a film composition diagram of a tunnel magneto-resistance element which is fabricated by the use of a manufacturing apparatus according to an embodiment of the present invention. -
FIG. 6 is a configuration diagram showing a second example of a multi-layered thin film manufacturing apparatus according to an embodiment of the present invention. -
FIG. 7 is a configuration diagram showing an internal structure of a process chamber which can be applied to an embodiment of the present invention. -
FIG. 8 is a configuration diagram showing an example of a conventional multi-layered thin film manufacturing apparatus (Patent Literature 4). -
FIG. 9 is a configuration diagram showing an example of a conventional multi-layered thin film manufacturing apparatus (Patent Literature 5). -
FIG. 10 is a configuration diagram showing an example of a spin valve sensor which is fabricated by a conventional multi-layered thin film manufacturing apparatus (Patent Literature 5). - There will be explained a multi-layered film manufacturing apparatus according to an embodiment of the present invention by the use of the drawings.
-
FIG. 1 is a configuration diagram showing a first example of a multi-layered thin film manufacturing apparatus according to an embodiment of the present invention. The manufacturing apparatus ofFIG. 1 is suitable to improve throughput while maintaining a low cost, and further to suppress device characteristic degradation by preventing or reducing interlayer cross contamination, in forming a multi-layered thin film. - A feature of the manufacturing apparatus of the present invention is that a process chamber for performing a process other than sputtering (etching chamber 14), a first sputtering deposition chamber including one sputtering cathode (sputtering
deposition chamber 13A), a second sputtering deposition chamber including one sputtering cathode (sputteringdeposition chamber 13C), a third sputtering deposition chamber including one sputtering cathode (sputteringdeposition chamber 13E), a fourth sputtering deposition chamber including two or more sputtering cathodes (sputteringdeposition chamber 13B), and a fifth sputtering deposition chamber including two or more sputtering cathodes (sputteringdeposition chamber 13D) are arranged around a transfer chamber including a substrate transfer mechanism. Here, inFIG. 1 , the three sputtering deposition chambers each including one sputtering cathode, the two sputtering deposition chambers each including two or more sputtering cathodes, and the process chamber for performing a process other than sputtering are provided around the transfer chamber including the substrate transfer mechanism. As will be described below, it is necessary to provide three or more sputtering deposition chambers each including one sputtering cathode, from the viewpoint of throughput improvement. - In
FIG. 1 , the fivesputtering deposition chambers 13A to 13E, theetching chamber 14 for removing oxide and contamination on asubstrate 25 surface by reverse sputtering etching, and twoload lock chambers transfer chamber 12 which includes twosubstrate transfer robots substrate transfer mechanism 11. Among the sputteringdeposition chambers 13A to 13E, each of 13A, 13C and 13E includes one sputteringcathode 31, and each of 13B and 13D includes fivesputtering cathodes 31. Note that one substrate transfer robot may be used as thesubstrate transfer mechanism 11 described inFIG. 1 . - Each of all the above chambers and the
load lock chambers load lock chambers - The
load lock chambers substrate 25 is brought in from atmospheric air before process and when thesubstrate 25 is taken out to atmospheric air after the process. On the other side, theload lock chambers substrates 25 disposed in theload lock chambers transfer chamber 12 which is exhausted into vacuum and when thesubstrate 25 is retrieved from thetransfer chamber 12 after the process. The number ofload lock chambers -
Gate valves 16 are provided between each of the sputteringdeposition chamber 13A, the sputteringdeposition chamber 13B, the sputteringdeposition chamber 13C, the sputteringdeposition chamber 13D, the sputteringdeposition chamber 13E, and theprocess chamber 14, and each of theload lock chambers 15 a and 15B. Each of thegate valves 16 is closed except when thesubstrate 25 is transferred. Thesubstrate transfer robot 11 is configured to take out thesubstrate 25 from theload lock chamber substrate 25 into a desired chamber by an instruction from computer program. - In the sputtering
deposition chamber 13B and the sputteringdeposition chamber 13D each including theplural sputtering cathodes 31, theplural sputtering cathodes 31 are disposed in each upper part of thesputtering deposition chambers FIG. 2 . In each inside lower part of thesputtering deposition chambers substrate stage 33 is provided which is rotatable by a power source (not shown in the drawing) provided outside the sputteringdeposition chambers substrate 25 for thin film deposition is placed over thesubstrate stage 33 at least during film deposition. Each of the sputteringcathodes 31 includes asputtering target 32 which is made of a material corresponding to the film type of each layer forming a multi-layered thin film, and disposed at an angle so that the surface of thesputtering target 32 faces substantially in the center direction of thesubstrate stage 33 inFIG. 2 . Note that the sputteringcathode 31 is not necessarily disposed at an angle and may be disposed so that the surface of thesputtering target 32 is substantially in parallel to thesubstrate 25 surface. - When a thin film is formed in this deposition chamber, DC or RF power is applied to a desired
sputtering cathode 31 preferably while thesubstrate stage 33 is being rotated, and the power is shut down when a desired film thickness is reached. A shutter may be disposed between thesubstrate 25 and thesputtering target 32, and the film thickness may be controlled by open and close of the shutter while the power is being applied. When a multi-layered thin film is formed, the above film forming operation may be performed sequentially while the substrate is placed on therotating substrate stage 33. Here, inFIG. 1 , four kinds oftarget 31 are disposed in the sputteringdeposition chamber 13B and the materials thereof are PtMn, CoFe, Ru, and CoFeB. Further, thegate valve 16 is provided on the side wall of the sputteringdeposition chamber 13B via anO ring 34. Further, four kinds oftarget 31 are disposed in the sputteringdeposition chamber 13D and the materials thereof are PtMn, CoFe, Ru, and CoFeB. Further, thegate valve 16 is provided on the side wall of thevacuum chamber 13A via anO ring 34. - In the
sputtering deposition chambers cathode 31, as shown inFIG. 3 , one sputtering cathode may be only disposed in the sputtering deposition chamber including plural sputtering cathodes and the same film forming operation may be performed. Preferably, the sputtering cathode is placed to have a size larger than that of the sputtering cathode placed on the sputtering deposition chamber including the plural sputtering cathodes in order to obtain a higher film deposition rate. Alternatively, as shown inFIG. 4 , the sputtering cathode may be placed so that the surface of the sputtering target is substantially in parallel to the substrate surface. In this case, the substrate stage needs not be rotated in particular. Here, inFIG. 1 , one kind oftarget 32 is disposed in the sputteringdeposition chamber 13A and the material thereof is a material capable of forming an oxide film, a nitride film, or a semiconductor film. Further, one kind oftarget 32 is disposed in the sputteringdeposition chamber 13C and the material thereof is a material capable of forming a metal film having a thickness not smaller than 10 nm. Further, one kind oftarget 32 is disposed in the sputteringdeposition chamber 13E and the material thereof is a material capable of forming a metal film having a thickness not smaller than 10 nm. Note that, inFIG. 1 , a target formed by a material capable of forming a metal film having a thickness not smaller than 10 nm may be disposed in the sputteringdeposition chamber 13A and a target formed by a material capable of forming an oxide film, a nitride film, or a semiconductor film may be disposed in either the sputteringdeposition chamber 13C or the sputteringdeposition chamber 13E. That is, in at least one of thesputtering deposition chambers - The
process chamber 14 which performs a process other than sputtering deposition is connected to thetransfer chamber 12. As theprocess chamber 14, there can be employed a process chamber for removing a thin film formed on or over the substrate, with plasma, an ion beam, an atom beam, a molecular beam, and a gas Cluster beam. For other examples, as theprocess chamber 14, there may be employed a process chamber for forming a thin film on the thin film formed on or over the substrate, by a chemical vapor deposition method, a process chamber for causing the thin film formed on or over the substrate to chemically react in gas, neutral active species, ions, or a mixed atmosphere thereof, or a process chamber for heating, cooling, or heating and cooling the substrate. - An internal structure of the
process chamber 14 is shown inFIG. 7 . Theprocess chamber 14 includes avacuum chamber 21, and anupper electrode 22 and a lower electrode are provided in thisvacuum chamber 21. Theupper electrode 22 is earthed and thelower electrode 23 is connected to an RF power source (high frequency power source) 60 via amatching box 24. Asubstrate 25 is placed on thelower electrode 23.Plasma 26 is generated between theupper electrode 22 and thelower electrode 23 when a plasma generation condition is established. - As a representative example of processing operation in the
above process chamber 14, Ar gas of 0.075 Pa is introduced into the inside of thevacuum chamber 21, RF power of 15 W (0.029 W/cm2 for a unit area) is applied to thelower electrode 23 to generate theplasma 26, and plasma processing is further performed under a condition that a substrate bias voltage (Vdc) is a voltage included in a range smaller than 0 V and not smaller than −300 V. The upper limit value of the substrate bias voltage is preferably −2 to −3 V, and the most preferable voltage is a voltage included in a range from −15 V to the upper limit value of the substrate bias voltage. This voltage is a voltage capable of generating plasma. For the process gas to be introduced into thevacuum chamber 21, inert gas such as Kr, Xe, Ne or similar gas can be used instead of Ar. Process gas pressure in theprocess chamber 14 is set to be a low pressure in a range of 0.01 to 100 Pa. - Next, there will be explained embodiments of the present invention by the use of the drawings.
-
FIG. 5 is a film composition diagram of a tunnel magneto-resistance element (magneto-resistance multi-layered film) fabricated by the use of a manufacturing apparatus according to an embodiment of the present invention. On asubstrate 25, there is formed a stacked body including aTa layer 41, aPtMn layer 42, aCoFe layer 43, aRu layer 44, aCoFeB layer 45, anMgO layer 46, aCoFeB layer 47, aTa layer 48, aRu layer 49, and aTa layer 50. That is, over thesubstrate 25, theTa layer 41 is formed having a film thickness of 20 nm as a foundation layer, successively thePtMn layer 42 of anti-ferromagnetic material is formed having a film thickness of 15 nm, successively theCoFe layer 43 of ferromagnetic material is formed having a film thickness of 2.5 nm, theRu layer 44 of non-magnetic material is formed having a film thickness of 0.9 nm, theCoFeB layer 45 of ferromagnetic material is formed having a film thickness of 3 nm, and theMgO layer 46 of oxide is formed having a film thickness of 1.2 nm. Successively, theCoFeB layer 47 of ferromagnetic material is formed again having a film thickness of 3 nm, theTa layer 48 is formed thereover having a very small film thickness of 1.5 nm, and then theRu layer 49 and theTa layer 50 are formed having film thickness of 10 nm and a film thickness of 50 nm, respectively. The bottom Ta film and thetop Ta film 50 have outstandingly large thicknesses and secondarily thePtMn layer 42 and theupper Ru layer 49 have large thicknesses. On the other side, for theCoFe layer 43 to themiddle Ta layer 47, thin layers are stacked having film thicknesses not larger than 3 nm per one layer. Further, only theMgO layer 46 is oxide. InFIG. 5 , theTa layer 41 functions as a foundation layer, thePtMn layer 42 functions as an anti-ferromagnetic layer, a stacked layer of theferromagnetic CoFe layer 43, thenon-magnetic Ru layer 44, and theferromagnetic CoFeB layer 45 functions as a magnetization fixing layer, theMgO layer 46 functions as a non-magnetic insulating layer, theCoFeB layer 47 functions as a magnetization free layer, and a stacked layer of theTa layer 48, theRu layer 49, and theTa layer 50 functions as a protection layer. -
FIG. 1 shows a manufacturing apparatus suitable to improve throughput while maintaining a low cost and further to suppress device characteristic degradation by preventing or reducing the interlayer cross contamination, in the deposition of such a multi-layered thin film. - As described above, in
FIG. 1 , the three sputtering deposition chambers each including one sputtering cathode, the two sputtering deposition chambers each including two or more sputtering cathodes and the one process chamber for performing a process other than sputtering are provided around the transfer chamber including the substrate transfer mechanism. As will be described below, at least three sputtering deposition chambers each including one sputtering cathode and at least two sputtering deposition chambers each including two or more sputtering cathodes are necessary from the viewpoint of throughput improvement. - When the tunnel magneto-resistance element (magneto-resistance multi-layered film) described in
FIG. 5 is manufactured by the use of the apparatus ofFIG. 1 , aTa target 32 is attached to each of thesputtering deposition chambers bottom Ta film 41 and thetop Ta film 47 each shown inFIG. 5 . Four sputtering targets 32 of PtMn, CoFe, Ru and CoFeB are attached to the sputteringdeposition chamber 13B and the remaining one sputteringcathode 31 is left vacant for backup. An MgO sinteredtarget 32 is attached to the sputteringdeposition chamber 13C. Threetargets 32 of CoFeB, Ta and Ru are attached to the sputteringdeposition chamber 13D, and the remaining two sputteringcathodes 31 are left vacant for backup. - The reason why the
sputtering target 32 is disposed for each layer although one multi-layered thin film includes plural layers of the same film type is to realize so-called sequential substrate transfer in which thesubstrate 25 is not transferred twice to the same process chamber in a series of the film deposition processes. That is, when plural layers of the same type are formed in different thicknesses, thinner one is formed by at least one of the three sputtering deposition chambers each including one sputtering cathode and thicker one is formed by another deposition chamber of the three sputtering deposition chambers. Accordingly, layers which are the same type but have different thicknesses can be formed without the substrate being transferred twice to the same sputtering deposition chamber. When suchsequential substrate 25 transfer is realized, process time bars ofrespective substrates 25 can be overlapped in a process time bar graph for continuous processing of theplural substrates 25 and therefore throughput is improved greatly. Thegate valves 16 are provided between each of the sputteringdeposition chamber 13A to the sputteringdeposition chamber 13E, and theetching chamber 14, and each of theload lock chambers reference numeral 35 indicates a placement stage for placing thesubstrate 25 temporarily when the twosubstrate transfer robots substrate 25, and a position alignment mechanism of thesubstrate 25 and a notch alignment mechanism of thesubstrate 25 may be provided separately. - Following Table 1 shows a process time table in the apparatus configuration of
FIG. 1 . -
TABLE 1 [sec] Pro- Process Takt cess Chamber Event time time 1 Transfer chamber12 Wafer Transfer 10.0 10.0 2 Etching chamber14 Etching 80.0 80.0 3 Transfer chamber12 Wafer Transfer 10.0 10.0 4 Sputtering deposition Ta deposition 40.0 40.0 chamber A (1PVD)13A 5 Transfer chamber12 Wafer Transfer 10.0 10.0 6 Sputtering deposition PtMn deposition 80.0 180.0 chamber B (5PVD)13B CoFe deposition 25.0 Ru deposition 25.0 CoFeB deposition 50.0 7 Transfer chamber12 Wafer Transfer 10.0 10.0 8 Sputtering deposition MgO deposition 60.0 60.0 chamber C (1PVD)13C 9 Transfer chamber12 Wafer Transfer 10.0 10.0 10 Sputtering deposition CoFeB deposition 50.0 145.0 chamber D (5PVD)13D Ta deposition 25.0 Ru deposition 70.0 11 Transfer chamber12 Wafer Transfer 10.0 10.0 12 Sputtering deposition Ta deposition 100.0 100.0 chamber E (1PVD)13E 13 Transfer chamber12 Wafer Transfer 10.0 10.0 Total time 675.0 675.0 Throughput = 20.0 - Along the process time table of Table 1, there will be explained a film forming sequence of the tunnel magneto-resistance element described in
FIG. 5 . Anunprocessed substrate 25 is transferred into theetching chamber 14 from theload lock chamber 15A by the use of thesubstrate transfer robot 11A (process 1 of Table 1), oxide and contamination on thesubstrate 25 surface are removed by reverse sputtering etching in the etching chamber 14 (process 2 of Table 1). Next, thesubstrate 25 is placed on theplacement stage 35 within thetransfer chamber 12 by thesubstrate transfer robot 11A (process 3 of Table 1). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13A by thesubstrate transfer robot 11B and a Ta layer having a film thickness of 20 nm is deposited over thesubstrate 25 as a foundation layer (process 4 of Table 1). Next, thesubstrate 25 on which the Ta layer is deposited is transferred into the sputteringdeposition chamber 13B by thesubstrate transfer robot 11B (process 5 of Table 1), and, over thesubstrate 25, aPtMn layer 42 of anti-ferromagnetic material is deposited in 15 nm, and successively aCoFe layer 43 of ferromagnetic material is deposited in 2.5 nm, aRu layer 44 of non-magnetic material is deposited in 0.9 nm, and aCoFeB layer 45 of ferromagnetic material is deposited in 3 nm (process 6 of Table 1). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13C by thesubstrate transfer robot 11B (process 7 of Table 1) and anMgO layer 46 of oxide is deposited in 1.2 nm (process 8 of Table 1). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13D by thesubstrate transfer robot 11B (process 9 of Table 1), aCoFeB layer 47 is deposited again over thesubstrate 25 in 3 nm and aTa layer 48 is deposited thereover in a very small thickness of 1.5 nm, and then aRu layer 49 of 10 nm and theTa layer 50 of 50 nm are deposited (process 10 of Table 1). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13E by thesubstrate transfer robot 11B (process 11 of Table 1), aTa layer 50 of 50 nm is deposited (process 12 of Table 1). Next, thesubstrate 25 is transferred into theload lock chamber 15B by thesubstrate transfer robot 11A (process 13 of Table 1). - As shown in the process time table of
FIG. 1 , the process chamber requiring the longest takt time is the sputteringdeposition chamber 13B and the takt time is 180 seconds. Throughput is limited by this takt time and a derived throughput is 20 wafers/hour. Here, in the present specification, “takt time” means a time after a substrate has been transferred into some chamber until the substrate is transferred out of the some chamber after processing. Further, in the present specification, throughput means substrate work volume which can be processed within a unit time. - As described above, each of the sputtering
deposition chamber 13B and the sputteringdeposition chamber 13D has the sputteringcathode 31 for backup, and, therefore, targets of PtMn and Ru can be attached to thecathodes 31 of thechambers cathodes 31 at the same time can be utilized. Thereby, a film deposition rate is increased twice and it is possible to reduce deposition time to one half for PtMn in process 6 of Table 1 and for Ru inprocess 10 of Table 1. -
TABLE 2 [sec] Pro- Process Takt cess Chamber Event time time 1 Transfer chamber12 Wafer Transfer 10.0 10.0 2 Etching chamber14 Etching 80.0 80.0 3 Transfer chamber12 Wafer Transfer 10.0 10.0 4 Sputtering deposition Ta deposition 40.0 40.0 chamber A (1PVD)1 5 Transfer chamber12 Wafer Transfer 10.0 10.0 6 Sputtering deposition PtMn deposition* 40.0 140.0 chamber B (5PVD)1 CoFe deposition 25.0 Ru deposition 25.0 CoFeB deposition 50.0 7 Transfer chamber12 Wafer Transfer 10.0 10.0 8 Sputtering deposition MgO deposition 60.0 60.0 chamber C (1PVD)1 9 Transfer chamber12 Wafer Transfer 10.0 10.0 10 Sputtering deposition CoFeB deposition 50.0 110.0 chamber D (5PVD)1 Ta deposition 25.0 Ru deposition* 35.0 11 Transfer chamber12 Wafer Transfer 10.0 10.0 12 Sputtering deposition Ta deposition 100.0 100.0 chamber E (1PVD)1 13 Transfer chamber12 Wafer Transfer 10.0 10.0 Total time 600.0 600.0 *co-sputtering Throughput = 25.7 - The process time table in this case is specified by process 6 and
process 10 of above Table 2, and the takt time for the sputteringdeposition chamber 13B is reduced from 180 seconds to 140 seconds and the takt time for the sputteringdeposition chamber 13D is reduced from 145 seconds to 110 seconds, although the sputteringdeposition chamber 13B still limits the takt times. Accordingly, the throughput is improved to 25.7 wafers/hour. - As a comparative example, Table 3 shows a time table when the tunnel magneto-resistance element described in
FIG. 5 is formed by the use of the sputtering apparatus described in Patent Literature 1. -
TABLE 3 [sec] Pro- Process Takt cess Chamber Event time time 1 Transfer chamber Wafer Transfer 10.0 10.0 2 Etching chamber Etching 80.0 80.0 3 Transfer chamber Wafer Transfer 10.0 10.0 4 Sputtering deposition Ta deposition* 60.0 100.0 chamber A (4PVD) PtMn deposition* 40.0 5 Transfer chamber Wafer Transfer 10.0 10.0 6 Sputtering deposition CoFe deposition 25.0 125.0 chamber B (4PVD) Ru deposition 25.0 CoFeB deposition 50.0 Mg deposition 25.0 7 Transfer chamber Wafer Transfer 10.0 10.0 8 Oxidation chamber Oxidation 90.0 90.0 9 Transfer chamber Wafer Transfer 10.0 10.0 10 Sputtering deposition CoFeB deposition 50.0 295.0 chamber C (4PVD) Ta deposition 25.0 Ru deposition 70.0 Ta deposition* 150.0 11 Transfer chamber Wafer Transfer 10.0 10.0 Total time 750.0 750.0 *co-sputtering Throughput = 12.2 - As shown in above Table 3, the takt time for the sputtering deposition chamber C is 295 seconds and the throughput is 12.2. Note that, also when the position of the process chamber is switched in the apparatus configuration diagram 1, the throughputs shown in Table 1 and Table 2 are maintained only if the sputtering targets are disposed so as to realize the
sequential substrate 25 transfer. - The same effect can be obtained also when the sputtering deposition chamber for MgO film deposition in the first embodiment is replaced by a deposition chamber using a chemical vapor deposition method.
-
FIG. 6 is a diagram showing a manufacturing apparatus according to another embodiment of the present invention which is applied for fabricating the tunnel magneto-resistance element shown inFIG. 5 . To atransfer chamber 12 including threesubstrate transfer robots reference numerals 13A to 13G, anetching chamber 14 for removing oxide and contamination on asubstrate 25 surface by reverse sputtering etching, and twoload lock chambers deposition chambers 13A to 13G, the sputteringdeposition chamber 13C includes five sputtering cathodes and the sputteringdeposition chamber 13E includes two sputtering cathodes. On the other side, each of thesputtering deposition chambers deposition chamber deposition chamber - A Ta target is attached to the sputtering
deposition chamber 13A, a PtMn target is attached to the sputteringdeposition chamber 13B, and a CoFe target, a Ru target, and twoCoFeM targets 31 are attached to the sputteringdeposition chamber 13C and the remaining one cathode is left vacant for backup. The twoCoFeB targets 31 are used for the co-sputtering. An MgO target is attached to the sputteringdeposition chamber 13D, a CoFeB target and a Ta target are attached to the sputteringdeposition chamber 13E, and one Ta target is attached to each of thesputtering deposition chambers - A process time table in the present embodiment is shown in Table 4.
-
TABLE 4 [sec] Pro- Process Takt cess Chamber Event time time 1 Transfer chamber 114Wafer Transfer 10 10 2 Second vacuum chamber 112Etching 80 80 3 Transfer chamber 114Wafer Transfer 10 10 4 First vacuum chamber 110Ta deposition 40 40 5 Transfer chamber 114Wafer Transfer 10 10 6 Second vacuum chamber 112PtMn deposition 80 205 7 Second vacuum chamber 112CoFe deposition 25 8 Second vacuum chamber 112Ru deposition 25 9 Second vacuum chamber 112CoFeB deposition 50 10 Second vacuum chamber 112Mg deposition 25 11 Transfer chamber 114Wafer Transfer 10 10 12 Process chamber Oxidation 90 90 13 Transfer chamber 114Wafer Transfer 10 10 14 Second vacuum chamber 112CoFeB deposition 50 50 15 Transfer chamber 114Wafer Transfer 10 10 16 First vacuum chamber 110Ta deposition 25 25 17 Transfer chamber 114Wafer Transfer 10 10 18 Second vacuum chamber 112Ru deposition 70 70 19 Transfer chamber 114Wafer Transfer 10 10 20 First vacuum chamber 110Ta deposition 150 150 21 Transfer chamber 114Wafer Transfer 10 10 Total time 800 800 Throughput = 8.8 - Along the process time table of above Table 4, there will be explained a film forming sequence of the tunnel magneto-resistance element described in
FIG. 5 . Anunprocessed substrate 25 is transferred into theetching chamber 14 from theload lock chamber 15A by thesubstrate transfer robot 11A (process 1 of Table 4), oxide and contamination on thesubstrate 25 surface are removed in theetching chamber 14 by reverse sputtering etching (process 2 of Table 4). Next, thesubstrate 25 is placed on aplacement stage 35A in thetransfer chamber 12 by thesubstrate transfer robot 11A (process 3 of Table 4). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13A by thesubstrate transfer robot 11B and aTa layer 41 is deposited over thesubstrate 25 having a film thickness of 20 nm as a foundation layer (process 4 of Table 4). Next, thesubstrate 25 is placed on aplacement stage 35B in thetransfer chamber 12 by thesubstrate transfer robot 11B (process 5 of Table 4). Next, aPtMn layer 42 is deposited over thesubstrate 25 having a film thickness of 15 nm as anti-ferromagnetic material by a sputtering method (process 6 of Table 4). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13C by the substrate transfer robot 11C (process 7 of Table 4), and aCoFeB layer 45 of ferromagnetic material and anMgO layer 46 of oxide are deposited over thesubstrate 25 in 3 nm and 1.2 nm, respectively, and aCoFeB layer 45 of ferromagnetic material is deposited having a film thickness of 3 nm by the co-sputtering method (process 8 of Table 4). - Next, the
substrate 25 is transferred into the sputteringdeposition chamber 13D by the substrate transfer robot 11C (process 9 of Table 4), and anMGO layer 46 of oxide is deposited over thesubstrate 25 in 1.2 nm by a sputtering method (process 10 of Table 4). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13E by the substrate transfer robot 11C (process 11 of Table 4), and aCoFeB layer 47 of ferromagnetic material is deposited again in 3 nm and a verythin Ta layer 48 is deposited thereover in 1.5 nm (process 12 of Table 4). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13F by thesubstrate transfer robot 11B (process 13 of Table 4), and aRu layer 49 is deposited in 10 nm (process 14 of Table 4). Next, thesubstrate 25 is transferred into the sputteringdeposition chamber 13G by thesubstrate transfer robot 11B (process 15 of Table 4), and aTa layer 50 is deposited in 50 nm (process 16 of Table 4). Next, thesubstrate 25 is transferred into theload lock chamber 15B by thetransfer robot 11A (process 17 of Table 4). - When the tunnel magneto-resistance element described in
FIG. 5 is formed along the process time table of Table 5 in this manner, the takt time for each of the chambers is made further uniform and the takt time for the sputtering deposition chamber B which has the longest takt time is 100 seconds. Since the sequential substrate transfer is realized in the apparatus configuration shown inFIG. 6 , the derived throughput is improved to 36 wafers/hour. Note that, also when the position of the process chamber is switched in the apparatus configuration diagram 6, the throughput shown in Table 4 is maintained only if the sputtering targets are disposed so as to realize the sequential substrate transfer. - As a first comparative example, there will be shown a time table in Table 5 when the tunnel magneto-resistance element described in
FIG. 5 is formed by the use of the sputtering apparatus described in Patent Literature 4. -
TABLE 5 [sec] Pro- Process Takt cess Chamber Event time time 1 Transfer chamber 114Wafer Transfer 10 10 2 Second vacuum chamber 112Etching 80 80 3 Transfer chamber 114Wafer Transfer 10 10 4 First vacuum chamber 110Ta deposition 40 40 5 Transfer chamber 114Wafer Transfer 10 10 6 Second vacuum chamber 112PtMn deposition 80 205 7 Second vacuum chamber 112CoFe deposition 25 8 Second vacuum chamber 112Ru deposition 25 9 Second vacuum chamber 112CoFeB deposition 50 10 Second vacuum chamber 112Mg deposition 25 11 Transfer chamber 114Wafer Transfer 10 10 12 Process chamber Oxidation 90 90 13 Transfer chamber 114Wafer Transfer 10 10 14 Second vacuum chamber 112CoFeB deposition 50 50 15 Transfer chamber 114Wafer Transfer 10 10 16 First vacuum chamber 110Ta deposition 25 25 17 Transfer chamber 114Wafer Transfer 10 10 18 Second vacuum chamber 112Ru deposition 70 70 19 Transfer chamber 114Wafer Transfer 10 10 20 First vacuum chamber 110Ta deposition 150 150 21 Transfer chamber 114Wafer Transfer 10 10 Total time 800 800 Throughput = 8.8 - Originally, in the sputtering deposition chamber described in Patent Literature 4, only one target material (Ta) is disposed in the
first vacuum chamber 110. Accordingly, when the tunnel magneto-resistance element described inFIG. 5 is tried to be formed by the use of a sputtering apparatus of the sputtering apparatus described in Patent Literature 4, the layers other than the Ta layer need to be deposited by thevacuum chamber 112. Further, the sputtering apparatus described in Patent Literature 4 does not include a process chamber which performs a process other than sputtering, and therefore cannot perform process of above Table 5 (oxidation process). Accordingly, above Table 5 assumes a case that the tunnel magneto-resistance element described inFIG. 5 is formed by the manufacturing apparatus ofFIG. 1 in which a process chamber is provided for the sputtering apparatus described in Patent Literature 4. The takt time of the sputtering apparatus described in Patent Literature 4 (total time for thesecond vacuum chamber 112 in the case of Patent Literature 4) is 405 seconds and the throughput is 8.8 (wafers/hour). Clearly this throughput is considerably worse than that of the apparatus configuration ofFIG. 1 according to an embodiment of the present invention. Further, in the case of the sputtering apparatus described in Patent Literature 4, a substrate is transferred twice into the same process chamber in a series of the film deposition processes and therefore so-called sequential substrate transfer cannot be realized. - As a second comparative example, there will be shown a process time table in Table 6 when the tunnel magneto-resistance element described in
FIG. 5 is formed by the use of the sputtering apparatus described in Patent Literature 5. - A process time table for the sputtering apparatus described in Patent Literature 5 is shown in Table 6.
-
TABLE 6 [sec] Pro- Process Takt cess Chamber Event time time 1 Transfer chamber Wafer Transfer 10.0 10.0 2 Etching chamber Etching 80.0 80.0 3 Transfer chamber Wafer Transfer 10.0 10.0 4 First single target DC Ta deposition 40.0 40.0 magnetron sputtering module 5 Transfer chamber Wafer Transfer 10.0 10.0 6 Multi-target DC PtMn deposition 80.0 180.0 sputtering module CoFe deposition 25.0 Ru deposition 25.0 CoFeB deposition 50.0 7 Transfer chamber Wafer Transfer 10.0 10.0 8 Multi-target ion beam MgO deposition 300.0 445.0 sputtering module CoFeB deposition 50.0 Ta deposition 25.0 Ru deposition 70.0 9 Transfer chamber Wafer Transfer 10.0 10.0 10 Second single target DC Ta deposition 100.0 100.0 magnetron sputtering module 11 Transfer chamber Wafer Transfer 10.0 10.0 Total time 905.0 905.0 Throughput = 8.1 - Originally, the sputtering system 600 disclosed in Patent Literature 5 does not include a process chamber which performs a process other than sputtering, and therefore cannot perform oxidation process. Further, for realizing so-called sequential substrate transfer by the use of the sputtering system 600 disclosed in Patent Literature 5, all the film depositions of MgO to CoFeM, Ta, and Ru in above Table 6 need to be performed by the multi-target ion-
beam sputtering module 608. In this case, in addition to the MgO film deposition which requires long time because of a low sputtering rate, three metal layers are deposited in the same chamber, and therefore the takt time becomes 445.0 seconds and the throughput becomes 8.1 wafers/hour. Further, deposition of oxide and metal in the same chamber causes oxygen contamination in the metal layer and causes a so-called cross contamination problem which degrades film characteristics. Accordingly, also by the use of the sputtering system 600 disclosed in Patent Literature 5, it is not possible to realize so-called sequential substrate transfer and to improve throughput.
Claims (14)
1. A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:
a transfer chamber including a substrate transfer mechanism;
a first sputtering deposition chamber including one sputtering cathode;
a second sputtering deposition chamber including one sputtering cathode;
a third sputtering deposition chamber including one sputtering cathode;
a fourth sputtering deposition chamber including two or more sputtering cathodes;
a fifth sputtering deposition chamber including two or more sputtering cathodes; and
a process chamber for performing a process other than sputtering,
wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber, and
wherein the first sputtering deposition chamber deposits at least one layer of an oxide film, a nitride film, and a semiconductor film included in the multi-layered film.
2. A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:
a transfer chamber including a substrate transfer mechanism;
a first sputtering deposition chamber including one sputtering cathode;
a second sputtering deposition chamber including one sputtering cathode;
a third sputtering deposition chamber including one sputtering cathode;
a fourth sputtering deposition chamber including two or more sputtering cathodes;
a fifth sputtering deposition chamber including two or more sputtering cathodes; and
a process chamber for performing a process other than sputtering,
wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber,
wherein the multi-layered film includes a first film that includes a metal film having a thickness not smaller than 10 nm, a second film that includes a metal film having a thickness not smaller than 10 nm, and a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film, and
wherein the first sputtering deposition chamber forms the first film and the second sputtering deposition chamber forms the second film.
3. The manufacturing apparatus according to claim 1 , wherein the transfer chamber includes a substrate transfer robot for transferring the substrate between the transfer chamber and the first to fifth deposition chambers.
4. The manufacturing apparatus according to claim 1 , wherein the transfer chamber is maintained in a vacuum.
5. The manufacturing apparatus according to claim 1 , wherein the process chamber is one for removing a thin film formed on or over the substrate, with plasma, an ion beam, an atom beam, a molecular beam, or a gas cluster beam.
6. The manufacturing apparatus according to claim 1 , wherein the process chamber is one for forming a thin film on a thin film formed on or over the substrate, by a chemical vapor deposition method.
7. The manufacturing apparatus according to claim 1 , wherein the process chamber is one for causing a thin film formed on or over the substrate to chemically react in gas, neutral active species, ions, or a mixed atmosphere thereof.
8. The manufacturing apparatus according to claim 1 , wherein the process chamber is one for heating, cooling, or heating and cooling the substrate.
9. The manufacturing apparatus according to claim 1 , wherein the first sputtering deposition chamber forms an oxide film included in the multi-layered film.
10. The manufacturing apparatus according to claim 2 , wherein the third sputtering deposition chamber forms the third film.
11. The manufacturing apparatus according to claim 1 ,
wherein the multi-layered film further includes a magnetization fixing layer and a magnetization free layer which includes a plurality of films, the magnetization fixing layer and the magnetization free layer being disposed so as to sandwich at least one layer of the oxide film, the nitride film, and the semiconductor film,
wherein the fourth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization fixing layer, and
wherein the fifth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization free layer.
12. The manufacturing apparatus according to claim 2 ,
wherein the multi-layered film further includes a magnetization fixing layer and a magnetization free layer which includes a plurality of films, the magnetization fixing layer and the magnetization free layer being disposed so as to sandwich the third film,
wherein the fourth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization fixing layer, and
wherein the fifth sputtering deposition chamber forms a plurality of films and deposits at least the magnetization free layer.
13. A manufacturing apparatus growing a multi-layered film as a magneto-resistance element over a substrate, comprising:
a transfer chamber including a substrate transfer mechanism;
a first sputtering deposition chamber including one sputtering cathode;
a second sputtering deposition chamber including one sputtering cathode;
a third sputtering deposition chamber including one sputtering cathode;
a fourth sputtering deposition chamber including two or more sputtering cathodes;
a fifth sputtering deposition chamber including two or more sputtering cathodes; and
a process chamber for performing a process other than sputtering,
wherein the first sputtering deposition chamber, the second sputtering deposition chamber, the third sputtering deposition chamber, the fourth sputtering deposition chamber, the fifth sputtering deposition chamber, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber,
wherein the multi-layered film includes a first film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film in the multi-layered film, a second film that includes a metal film having a thickness larger in a different order of magnitude than the thinnest film, and a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film, and
wherein the first sputtering deposition chamber forms the first film and the second sputtering deposition chamber forms the second film.
14. The manufacturing apparatus according to claim 13 , wherein the third sputtering deposition apparatus forms the third film.
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US15/389,259 US9752226B2 (en) | 2010-12-28 | 2016-12-22 | Manufacturing apparatus |
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WO2018140118A1 (en) * | 2017-01-26 | 2018-08-02 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
US10446372B2 (en) | 2017-01-26 | 2019-10-15 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
US10741361B2 (en) | 2017-01-26 | 2020-08-11 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
US11114277B2 (en) | 2017-01-26 | 2021-09-07 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
Also Published As
Publication number | Publication date |
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US20170101708A1 (en) | 2017-04-13 |
KR101786868B1 (en) | 2017-10-18 |
US20130277207A1 (en) | 2013-10-24 |
US9752226B2 (en) | 2017-09-05 |
JP5650760B2 (en) | 2015-01-07 |
CN103403215A (en) | 2013-11-20 |
TWI528489B (en) | 2016-04-01 |
JPWO2012090395A1 (en) | 2014-06-05 |
DE112011104627T5 (en) | 2013-10-02 |
KR101522992B1 (en) | 2015-05-26 |
CN103403215B (en) | 2016-01-06 |
TWI480970B (en) | 2015-04-11 |
TW201241957A (en) | 2012-10-16 |
KR20140128437A (en) | 2014-11-05 |
KR20150091529A (en) | 2015-08-11 |
TW201511169A (en) | 2015-03-16 |
US9039873B2 (en) | 2015-05-26 |
KR20130088200A (en) | 2013-08-07 |
WO2012090395A1 (en) | 2012-07-05 |
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